Display apparatus and method of manufacturing same

Abstract

A display apparatus of the present invention comprises: an active layer; a first semiconductor layer provided on a first surface of the active layer; and a second semiconductor layer provided on a second surface of the active layer and including a plurality of pores. The first semiconductor layer includes a plurality of semiconductor regions including a plurality of semiconductors and a plurality of separation regions provided between the plurality of semiconductor regions. The second semiconductor layer includes a plurality of first pores provided to correspond to the plurality of semiconductor regions, a plurality of second pores provided to correspond to the plurality of separation regions, a plurality of color conversion units which are provided in the plurality of first pores and convert light generated from the active layer to output light of different colors, and a plurality of blocking units provided in the plurality of second pores to prevent interference between light of different colors.

Description

Display device and manufacturing method thereof

[0001] The present disclosure relates to a display device for preventing crosstalk and a method for manufacturing the same.

[0002] Display devices such as LCD (liquid crystal display), OLED (organic light emitting diode)-based display, mini LED-based display, and micro LED-based display are widely used.

[0003] Among these, display devices based on micro LED (Micro light-emitting-diode) are attracting attention as next-generation display devices due to their strengths in high contrast ratio, response speed, color reproducibility, viewing angle, brightness, and lifespan.

[0004] There are several ways to implement full color in micro LED-based display devices, including:

[0005] For example, there is a method of placing micro LEDs that emit red light, green light, and blue light respectively in sub-pixels and then implementing the color of the sub-pixel through color mixing.

[0006] Another example is a method of inducing the emission of white light by using a light-converting material in an LED packaging that emits blue light or ultraviolet light, and then converting the white light into red light, green light, and blue light through a color filter for each subpixel and emitting them.

[0007] Another example is a method of placing a color conversion layer using quantum dots that convert blue light from a micro LED into red light or green light in a sub-pixel.

[0008] The micro LED-based display device described above has a problem in that crosstalk occurs between adjacent sub-pixels.

[0009] The present disclosure will be described in detail in the following and can be learned by the present embodiments.

[0010] One aspect of the present disclosure provides a display device including a semiconductor layer having a blocking section provided between a plurality of color conversion sections, and a method for manufacturing the same.

[0011] Another aspect of the present disclosure provides a display device including a semiconductor layer having a blocking portion provided between a plurality of color conversion portions, and an activation layer provided by extending the blocking portion of the semiconductor layer, and a method for manufacturing the same.

[0012] A display device according to one aspect of the present disclosure includes an active layer; a first semiconductor layer provided on a first surface of the active layer; and a second semiconductor layer provided on a second surface of the active layer. The first semiconductor layer of the display device according to one aspect includes a plurality of semiconductor regions, each region including a plurality of semiconductors, and a plurality of separation regions provided between the plurality of semiconductor regions. The second semiconductor layer of the display device according to one aspect includes a plurality of first pores provided in regions of the second semiconductor layer corresponding to the plurality of semiconductor regions of the first semiconductor layer, a plurality of second pores of the second semiconductor layer provided in regions corresponding to the plurality of separation regions of the first semiconductor layer, a plurality of color conversion units provided in each of the plurality of first pores and converting light generated in the active layer into light of different colors, and a plurality of blocking units provided in each of the plurality of second pores and preventing interference between lights converted into different colors.

[0013] A plurality of first and second pores of a display device according to one aspect may be formed in a direction from a first surface of a second semiconductor layer to a second surface of an active layer. The length of the plurality of first and second pores of the display device according to one aspect has a length corresponding to a thickness of the second semiconductor layer. The first surface of the second semiconductor layer of the display device according to one aspect is a surface from which light is emitted.

[0014] An active layer of a display device according to one aspect includes extended pores formed by extending a plurality of second pores.

[0015] A plurality of first pores of a display device according to one aspect may be formed in a direction from a first surface of a second semiconductor layer toward a second surface of an active layer. A plurality of second pores of a display device according to one aspect may be formed in a direction from a first surface of a second semiconductor layer toward a first surface of an active layer.

[0016] A display device according to one aspect, wherein the length of the plurality of first pores has a length corresponding to the thickness of the second semiconductor layer. A display device according to one aspect, wherein the length of the plurality of second pores has a length corresponding to the thickness of the second semiconductor layer plus the thickness of the activation layer.

[0017] A display device according to one aspect includes a plurality of semiconductors, each of which includes a p-type semiconductor. A second semiconductor layer of the display device according to one aspect includes an n-type semiconductor. An active layer of the display device according to one aspect includes a quantum well structure (MQW).

[0018] The display device according to one aspect further includes a color filter layer including a first color filter, a second color filter, and a third color filter arranged adjacent to each other and arranged in a row, respectively, a plurality of color conversion units.

[0019] A display device according to one aspect further includes a color filter layer including a first color filter, a second color filter, and a third color filter, which are respectively arranged adjacent to a plurality of color conversion units. The first color filter and the third color filter of the display device according to one aspect may be arranged in a row. The second color filter of the display device according to one aspect may be arranged in a direction perpendicular to the first color filter and the third color filter arranged in a row, and may have a size corresponding to a size greater than or equal to the combined size of the first and third color filters.

[0020] A plurality of color conversion units of a display device according to one aspect include a first color conversion unit that converts light generated in an active layer into light of a first color, a second color conversion unit that converts light generated in the active layer into light of a second color, and a third color conversion unit that converts light generated in the active layer into light of a third color.

[0021] The first and second color conversion units of the display device according to one aspect include a light diffusing agent and a color conversion material. The third color conversion unit of the display device according to one aspect includes a light diffusing agent. The color conversion material of the display device according to one aspect includes at least one of a quantum dot and a fluorescent substance.

[0022] A plurality of blocking sections of a display device according to one aspect include a first blocking section provided in a plurality of second pores between a first color conversion section and a second color conversion section, and a second blocking section provided in a plurality of second pores between a second color conversion section and a third color conversion section. The first and second blocking sections of the display device according to one aspect include an absorbent material or a reflective material.

[0023] A method for manufacturing a display device according to another aspect comprises: stacking an active layer and a second semiconductor layer on a first semiconductor layer including a plurality of semiconductor regions each having a plurality of semiconductors and a plurality of separation regions provided between the plurality of semiconductor regions; forming a plurality of first pores in a region of the second semiconductor layer corresponding to the plurality of semiconductor regions of the first semiconductor layer among regions of the second semiconductor layer; forming a plurality of second pores in a region of the second semiconductor layer corresponding to the plurality of separation regions of the first semiconductor layer among regions of the second semiconductor layer; forming a plurality of color conversion portions in the plurality of first pores; and forming a plurality of blocking portions in the plurality of second pores.

[0024] Forming a plurality of first and second pores includes coating a second semiconductor layer with a photoresist, aligning a mask to the photoresist, performing lithography to form a pattern in the second semiconductor layer, and peeling off the photoresist. The pattern formed in the second semiconductor layer is a pattern corresponding to the plurality of first and second pores.

[0025] Forming a plurality of color conversion sections includes forming a first color conversion section, a second color conversion section, and a third color conversion section using a coating method.

[0026] Forming a plurality of color conversion units includes forming a first color conversion unit, a second color conversion unit, and a third color conversion unit using an ink jet method.

[0027] Forming a plurality of blocking portions includes forming a first blocking portion and a second blocking portion using a coating method.

[0028] Forming a plurality of blocking portions includes forming a first blocking portion and a second blocking portion using an ink jet method.

[0029] A method for manufacturing a display device according to another aspect further includes forming a color filter layer by using a coating method on a second semiconductor layer having a plurality of color conversion sections and a plurality of blocking sections formed thereon.

[0030] Forming a plurality of first and second pores includes coating a first photoresist on a second semiconductor layer, aligning a first mask on the first photoresist, performing lithography to form a first pattern on the second semiconductor layer, peeling off the first photoresist, coating a second photoresist on the second semiconductor layer, aligning a second mask on the second photoresist, performing lithography to form a second pattern on the second semiconductor layer and the active layer, and peeling off the second photoresist.

[0031] The first pattern formed on the second semiconductor layer is a pattern corresponding to a plurality of first pores. The second pattern formed on the second semiconductor layer and the active layer is a pattern corresponding to a plurality of second pores.

[0032] A method for manufacturing a display device according to another aspect further includes forming a color filter layer by coating a second semiconductor layer on which a plurality of color conversion sections and a plurality of blocking sections are formed.

[0033] Forming the plurality of blocking elements includes loading a reflective material or an absorbing material into the plurality of second pores between the plurality of color conversion elements.

[0034] According to the present disclosure, the present disclosure can prevent crosstalk occurring between color conversion units by providing a blocking unit between a plurality of color conversion units, thereby improving the brightness of the front surface of the display device.

[0035] The present disclosure can prevent color conversion materials from agglomerating by loading the color conversion materials into pores provided in a semiconductor layer.

[0036] The present disclosure provides a display device capable of improving optical color purity and color reproducibility by further including a color filter.

[0037] The present disclosure can improve the marketability of a display device, further increase user satisfaction, enhance user reliability, and secure product competitiveness.

[0038] Figure 1 is an exemplary diagram of a display device according to one embodiment.

[0039] FIG. 2 is an exemplary diagram of a display panel provided in a display device according to one embodiment.

[0040] FIG. 3 is an exemplary diagram of a light emitting body provided in a display device according to one embodiment.

[0041] FIG. 4 is an exemplary diagram of a light-emitting element provided in a display device according to one embodiment.

[0042] FIG. 5a and FIG. 5b are detailed structural examples of a light-emitting element provided in a display device according to one embodiment.

[0043] Figure 5c is a modified example of the light emitting element shown in Figure 5b.

[0044] FIG. 6a and FIG. 6b are examples of optical paths between the second and third color conversion units of the light emitting element illustrated in FIG. 5b.

[0045] FIGS. 7A to 7O are examples of flowcharts of a method for manufacturing a light-emitting element illustrated in FIG. 5B.

[0046] FIGS. 8A to 8E are examples of flowcharts of a method for manufacturing a light-emitting element illustrated in FIG. 5C.

[0047] Figures 9a to 9l are flowcharts of a method for manufacturing the light-emitting element illustrated in Figure 5c.

[0048] FIG. 10a and FIG. 10b are detailed structural examples of a light-emitting element provided in a display device according to another embodiment.

[0049] Figure 10c is a modified example of the light emitting element shown in Figure 10b.

[0050] FIG. 11a is an example diagram of a color filter layer provided in the light emitting element illustrated in FIG. 10c.

[0051] Figures 11b and 11c are examples of deformation of the color filter layer.

[0052] FIG. 12a and FIG. 12b are examples of optical paths between the second and third color conversion units of the light emitting element illustrated in FIG. 10b.

[0053] Figures 13a to 13e are flowcharts of a method for manufacturing the light-emitting element illustrated in Figure 10b.

[0054] It should be understood that the various embodiments and terms used in this document are not intended to limit the technical features described in this document to specific embodiments, but rather to include various modifications, equivalents, or substitutes of the embodiments.

[0055] In connection with the description of the drawings, similar reference numerals may be used for similar or related components.

[0056] The singular form of a noun corresponding to an item may include one or more items, unless the context clearly indicates otherwise.

[0057] In this document, each of the phrases "A or B", "at least one of A and B", "at least one of A or B", "A, B, or C", "at least one of A, B, and C", and "at least one of A, B, or C" may include any one of the items listed together in that phrase, or all possible combinations thereof.

[0058] Terms such as "first," "second," or "first" or "second" may be used simply to distinguish one component from another and do not qualify the components in any other respect (e.g., importance or order).

[0059] When a component (e.g., a first component) is referred to as being “coupled” or “connected” to another component (e.g., a second component), with or without the terms “functionally” or “communicatively,” it means that the component can be connected to the other component directly (e.g., wired), wirelessly, or through a third component.

[0060] The terms “include” or “have” are intended to specify the presence of a feature, number, step, operation, component, part or combination thereof described in this document, but do not preclude the presence or addition of one or more other features, numbers, steps, operations, components, parts or combinations thereof.

[0061] When a component is said to be “connected,” “coupled,” “supported,” or “in contact with” another component, this includes not only cases where the components are directly connected, coupled, supported, or in contact, but also cases where the components are indirectly connected, coupled, supported, or in contact through a third component.

[0062] When we say that a component is "on" another component, this includes not only cases where the component is in contact with the other component, but also cases where there is another component between the two components.

[0063] The term “and / or” includes any combination of a plurality of related described elements or any one of a plurality of related described elements.

[0064] The operating principle and embodiments of the present invention will be described with reference to the attached drawings below.

[0065] FIG. 1 is an exemplary diagram of a display device according to an embodiment, and FIG. 2 is an exemplary diagram of a display panel provided in a display device according to an embodiment.

[0066] A display device (1) is a device that displays visual and three-dimensional image information, such as a display unit of a mobile device such as a laptop, smart phone, tablet, etc., a monitor of a PC, a television, a display unit of a home appliance, a display unit in a vehicle, etc.

[0067] As illustrated in FIG. 1, the display device (1) may include a television.

[0068] The display device (1) includes a main body (10a) forming an exterior and a stand (10b) mounted on the lower part of the main body (10a). This display device (1) can also be installed on a wall without a stand using a bracket or the like.

[0069] The display device (1) may include a display panel (10c) provided on the main body (10a) and displaying an image.

[0070] The main body (10a) may include a cover that covers the rear surface of the display panel (10c).

[0071] The main body (10a) may further include a bezel that covers the frame of the display panel (10c). In this case, the cover and bezel of the main body may be detachably coupled to each other.

[0072] As illustrated in FIG. 2, the display panel (10c) may include a plurality of display modules (c1, c2, .. c12).

[0073] Multiple display modules (c1, c2, .. c12) can be arranged in a quadrangle type, such as a rectangle (Rectangle type) or a square (Square type).

[0074] A plurality of display modules (c1, c2, .. c12) can be arranged vertically, horizontally, and horizontally so as to be adjacent to each other. A plurality of display modules (c1, c2, .. c12) can be arranged in a matrix form of M * N. M and N can be natural numbers. There is no limitation on the number and arrangement method of the plurality of display modules (c1, c2, .. c12).

[0075] Each of the plurality of display modules (c1, c2, .. c12) may include a light-emitting body (100) in which light-emitting elements (100a, 100b, 100c) having a size in micro units of several μm to several hundred μm are arranged.

[0076] A plurality of light-emitting elements (100a, 100b, 100c) can implement a plurality of pixels.

[0077] A plurality of light-emitting elements (100a, 100b, 100c) are arranged adjacent to each other and can be arranged up, down, left, and right.

[0078] Multiple display modules (c1, c2, .. c12) may have the same structure. Therefore, the description of one display module can be applied equally to all other display modules.

[0079] FIG. 3 is an example diagram of a light emitting body provided in a display module according to one embodiment.

[0080] The light emitting body (100) may include a substrate (101) and a plurality of light emitting elements (100a, 100b, 100c).

[0081] The substrate (101) may include a glass substrate and a TFT circuit (Thin Film Transistor) that is arranged on the glass substrate and connected to a plurality of light-emitting elements (100a, 100b, 100c) and transmits a signal for driving the plurality of light-emitting elements (100a, 100b, 100c).

[0082] The TFT circuit may include CMOS (Complementary Metal-Oxide Semiconductor) type or n-type MOSFET or p-type MOSFET transistors.

[0083] Each of the plurality of light-emitting elements (100a, 100b, 100c) may include a first sub-pixel (sp1), a second sub-pixel (sp2), and a third sub-pixel (sp3).

[0084] These light-emitting elements (100a, 100b, 100c) may have the same structure. The description of the light-emitting element (100a) described below may be equally applied to other light-emitting elements (100b, 100c).

[0085] FIG. 4 is an exemplary diagram of a light-emitting element provided in a display device according to one embodiment.

[0086] The light-emitting element (100a) may include a first semiconductor layer (110), a second semiconductor layer (120), and an active layer (130).

[0087] The first semiconductor layer (110) may include a plurality of semiconductors. Each of the plurality of semiconductors may be a first type semiconductor. The first type may be a p type. That is, the first semiconductor layer (110) may include a p type semiconductor.

[0088] The first semiconductor layer (110) may include a plurality of semiconductor regions and a plurality of separation regions.

[0089] Multiple semiconductors can be provided in each of the multiple semiconductor areas.

[0090] The plurality of separation regions may be regions between the plurality of semiconductors. The plurality of separation regions may be provided between the plurality of semiconductor regions in the region of the first semiconductor layer (110).

[0091] The first semiconductor layer (110) can be placed adjacent to the substrate (101).

[0092] The p-type semiconductor may include a p-type gallium nitride (GaN) semiconductor, a p-type aluminum nitride (AlN) semiconductor, or a p-type AlxGa(1-x)N(0≤ x≤ 1) semiconductor.

[0093] The p-type semiconductor can be a gallium nitride (GaN) semiconductor doped with Mg, Ca, Zn, Cd, or Hg.

[0094] The second semiconductor layer (120) may include a second type semiconductor. The second type may be an n type. That is, the second semiconductor layer (120) may include an n type semiconductor.

[0095] The n-type semiconductor of the second semiconductor layer (120) may be formed into a structure in which a plurality of pores are formed. The structure in which a plurality of pores are formed may be a porous structure, and may be a nano-porous structure.

[0096] An n-type semiconductor may include an n-type semiconductor of the III to V series. For example, the n-type semiconductor may include n-GaN.

[0097] Alternatively, the n-type semiconductor may include an n-AlN semiconductor, or an n-AlxGa semiconductor (1-x)N (0≤ x≤ 1).

[0098] The n-type semiconductor may be a silicon (Si)-doped gallium nitride (GaN) or germanium (Ge)-doped gallium nitride (GaN) semiconductor.

[0099] The active layer (130) may be provided between the first semiconductor layer (110) and the second semiconductor layer (120). That is, the first semiconductor layer (110) may be provided in contact with the first surface of the active layer (130), and the second semiconductor layer (120) may be provided in contact with the second surface of the active layer (130).

[0100] In other words, the first semiconductor layer (110), the active layer (130), and the second semiconductor layer (120) may have a stacked structure. The first semiconductor layer (110), the active layer (130), and the second semiconductor layer (120) may be formed by epitaxial growth.

[0101] The active layer (130) may be a layer that generates light when receiving energy. The light generated in the active layer (130) may be emitted to the outside through the second semiconductor layer (120).

[0102] Briefly explaining the principle of light generation, when current passes through the active layer (130), electrons of the second semiconductor layer (120) can combine with holes of the first semiconductor layer (110) in the active layer. And light can be generated by the combination of electrons and holes.

[0103] The light-emitting element (100a) may further include a first electrode (a1) and a second electrode (a2) for connection with the first semiconductor layer (110) and the second semiconductor layer (120) and the TFT circuit of the substrate (101).

[0104] A first electrode (a1) may be connected to a p-type semiconductor provided in a first semiconductor layer (110). A second electrode (a2) may be connected to an n-type semiconductor of a second semiconductor layer (120).

[0105] The first electrode (a1) may be a positive electrode, and the second electrode (a2) may be a negative electrode.

[0106] Figures 5a and 5b are detailed structural examples of a light-emitting element provided in a display device according to one embodiment. A description will be given of a single pixel structure.

[0107] The light-emitting element may include a first semiconductor layer (110), a second semiconductor layer (120), and an active layer (130).

[0108] As illustrated in FIG. 5a, the first semiconductor layer (110) may include a first p-type semiconductor (111), a second p-type semiconductor (112), and a third p-type semiconductor (113).

[0109] The first p-type semiconductor (111), the second p-type semiconductor (112), and the third p-type semiconductor (113) can be arranged spaced apart from each other at a certain interval in the first semiconductor layer (110).

[0110] A first p-type semiconductor (111) may be provided in a first semiconductor region of a first semiconductor layer, a second p-type semiconductor (112) may be provided in a second semiconductor region of the first semiconductor layer, and a third p-type semiconductor (113) may be provided in a third semiconductor region of the first semiconductor layer.

[0111] A first separation region may be provided between the first semiconductor region and the second semiconductor region, and a second separation region may be provided between the second semiconductor region and the third semiconductor region.

[0112] The second semiconductor layer (120) may include an n-type semiconductor (121).

[0113] An n-type semiconductor (121) can be formed into a structure in which a plurality of pores are formed. The structure in which a plurality of pores are formed is a porous structure and may be a nano-porous structure.

[0114] The n-type semiconductor (121) may be a semiconductor having a first thickness (d1).

[0115] A plurality of pores formed in the n-type semiconductor (121) may have a columnar shape.

[0116] The length of a plurality of pores formed in the n-type semiconductor (121) may have a length corresponding to the first thickness (d1) of the n-type semiconductor (121).

[0117] A plurality of pores formed in an n-type semiconductor (121) may have a length from a first surface of the n-type semiconductor (121) to a second surface of the n-type semiconductor (121).

[0118] The first surface of the n-type semiconductor (121) is a surface from which light is emitted, and the second surface of the n-type semiconductor (121) is a surface that contacts the active layer (130), and may be the second surface of the active layer.

[0119] A plurality of pores (p1, p2) formed in an n-type semiconductor (121) can be arranged at preset intervals.

[0120] Each pore (p1, p2) can have a diameter of several nm to several μm.

[0121] A plurality of first pores (p1) can be provided in a region corresponding to a region in which a first p-type semiconductor (111), a second p-type semiconductor (112), and a third p-type semiconductor (113) are arranged among regions of an n-type semiconductor (121).

[0122] That is, a plurality of first pores (p1) can be provided in an area of ​​the second semiconductor layer corresponding to a plurality of semiconductor areas provided in the first semiconductor layer.

[0123] The region corresponding to the plurality of semiconductor regions may be a region vertically corresponding to the plurality of semiconductor regions with an activation layer interposed therebetween.

[0124] More specifically, the plurality of first pores (p1) may include first color pores (pr) provided in a region corresponding to a first semiconductor region in which a first p-type semiconductor (111) is arranged, second color pores (pg) provided in a region corresponding to a second semiconductor region in which a second p-type semiconductor (112) is arranged, and third color pores (pb) provided in a region corresponding to a third semiconductor region in which a third p-type semiconductor (113) is arranged.

[0125] A plurality of second pores (p2) may be provided in a region corresponding to a first separation region between a first p-type semiconductor (111) and a second p-type semiconductor (112) among regions of an n-type semiconductor (121) and a second separation region between a second p-type semiconductor (112) and a third p-type semiconductor (113).

[0126] That is, a plurality of second pores (p2) can be provided in an area of ​​the second semiconductor layer corresponding to a plurality of spaced areas provided in the first semiconductor layer.

[0127] The region corresponding to the plurality of spaced regions may be a region vertically corresponding to the plurality of spaced regions with an activation layer between them.

[0128] The plurality of second pores (p2) may include second pores (pc) provided between the first and second color pores, and second pores (pd) provided between the second and third color pores.

[0129] The active layer (130) can be provided between the first semiconductor layer (110) and the second semiconductor layer (120).

[0130] The active layer (130) may include a single quantum well structure (SQW) or a multi-quantum well structure (MQW).

[0131] As illustrated in FIG. 5b, the second semiconductor layer (120) may further include a plurality of color conversion parts (122) provided in the first pores (p1) of the n-type semiconductor (121) and a plurality of blocking parts (123) provided in the second pores (p2) of the n-type semiconductor (121).

[0132] A plurality of color conversion units (122) can convert light generated from the active layer (130) into light of first, second, and third colors. The first color may be red (R), the second color may be green (G), and the third color may be blue (B).

[0133] The plurality of color conversion units (122) may include a first color conversion unit (m1) that converts light generated from the active layer (130) into light of a first color, a second color conversion unit (m2) that converts light generated from the active layer (130) into light of a second color, and a third color conversion unit (m3) that converts light generated from the active layer (130) into light of a third color.

[0134] The first color conversion unit (m1) may be provided in the first color pore (pr), the second color conversion unit (m2) may be provided in the second color pore (pg), and the third color conversion unit (m3) may be provided in the third color pore (pb).

[0135] The first color conversion unit (m1) may be provided in an area corresponding to the first p-type semiconductor (111), the second color conversion unit (m2) may be provided in an area corresponding to the second p-type semiconductor (112), and the third color conversion unit (m3) may be provided in an area corresponding to the third p-type semiconductor (113).

[0136] The first color conversion unit (m1) can form a first sub-pixel (sp1), the second color conversion unit (m2) can form a second sub-pixel (sp2), and the third color conversion unit (m3) can form a third sub-pixel (sp3).

[0137] Each color conversion unit (122) may include a light diffusing agent and may further include a color conversion material.

[0138] The light diffusing agent can be provided in the first color pores (pr), the second color pores (pg), and the third color pores (pb).

[0139] The color conversion material can be provided in the first color pores (pr) and the second color pores (pg) among the first pores. The color conversion material can also be provided in the third color pore (pb).

[0140] That is, the first color conversion unit (m1) may include a light diffusing agent and a first color conversion material, the second color conversion unit (m2) may include a light diffusing agent and a second color conversion material, and the third color conversion unit (m3) may include a light diffusing agent. The third color conversion unit (m3) may also include a light diffusing agent and a third color conversion material.

[0141] The light diffusing agents of the first, second, and third color conversion units (m1, m2, m3) may be the same or different.

[0142] The first, second, and third color conversion materials may differ in at least one of the type, size, and shape of the color conversion material.

[0143] The first, second, and third color conversion materials may have different compositions among the color conversion materials.

[0144] The first color conversion part (m1) can be formed by coating or ink-jetting a light diffusing agent and a first color conversion material onto the first color pores (pr) of an n-type semiconductor.

[0145] The second color conversion section (m2) can be formed by coating or ink-jetting a light diffusing agent and a second color conversion material onto the second color pores (pg) of the n-type semiconductor.

[0146] The third color conversion portion (m3) can be formed by coating or ink-jetting a light diffusing agent onto the third color pores (pb) of the n-type semiconductor. When the third color conversion portion (m3) includes a color conversion material, the third color conversion portion (m3) can be formed by coating or ink-jetting the light diffusing agent and the third color conversion material onto the third color pores (pb) of the n-type semiconductor.

[0147] The color conversion material may include at least one of a quantum dot (QD) and a fluorescent substance. For example, the color conversion material may include only quantum dots. The color conversion material may include quantum dots and a fluorescent substance. The color conversion material may include quantum dots and a fluorescent substance.

[0148] The first color conversion material may include at least one of the first quantum dot and the first phosphor, the second color conversion material may include at least one of the second quantum dot and the second phosphor, and the third color conversion material may include at least one of the third quantum dot and the third phosphor.

[0149] Quantum dots (QDs) are nanoscale semiconductor particles. When a quantum dot is excited by light or electricity, the electrons in the quantum dot can be excited to a higher energy state. Consequently, the quantum dot can emit light of a specific wavelength.

[0150] Quantum dots may include at least one semiconductor material selected from the group consisting of Cd, Se, Zn, S, ZnS, ZnSe, CdSe, InP, CdS, PbS, InP, InAs, GaAs, and GaP. That is, quantum dots may include one or more semiconductor materials. Each quantum dot may have a diameter of several tens of nm or less, for example, a diameter of about 10 nm or less.

[0151] Quantum dots may have a core-shell structure, which may include a core and / or one or more shells. The core and shells may or may not comprise the same semiconductor material.

[0152] The multiple quantum dots provided in the first and second color pores may or may not have identical core-shell structures.

[0153] When excited by electricity or light, quantum dots can emit light of a particular wavelength and / or range of wavelengths (also called the quantum dot's 'emission wavelength').

[0154] More specifically, for example, a quantum dot can absorb one or more photons having a wavelength shorter than the emission wavelength of the quantum dot and emit one or more photons having a wavelength longer than the emission wavelength.

[0155] When quantum dots are provided in the first, second, and third color conversion sections, the quantum dots may include first quantum dots having a first emission wavelength, second quantum dots having a second emission wavelength, and third quantum dots having a third emission wavelength.

[0156] When quantum dots are provided in the first, second, and third color pores, the first quantum dots can be provided in the first color pore, the second quantum dots can be provided in the second color pore, and the third quantum dots can be provided in the third color pore.

[0157] By providing quantum dots in color pores (pr, pg, pb) separated by partitions, agglomeration of quantum dots can be minimized. The partitions can be the portion of an n-type semiconductor excluding the pores.

[0158] When quantum dots are included in the first, second, and third color conversion units, the first quantum dots may be included in the first color conversion unit (m1), the second quantum dots may be included in the second color conversion unit (m2), and the third quantum dots may be included in the third color conversion unit (m3).

[0159] The first quantum dots can convert light generated in the active layer into light having a first emission wavelength, and the second quantum dots can convert light generated in the active layer into light having a second emission wavelength.

[0160] When third quantum dots are provided, the third quantum dots can convert light generated in the active layer (130) into light having a third emission wavelength.

[0161] The light having the first emission wavelength may be red light, the light having the second emission wavelength may be green light, and the light having the third emission wavelength may be blue light.

[0162] The light generated in the active layer (130) by the first and second semiconductor layers (110, 120) may be white light or blue light.

[0163] The first, second and third quantum dots can be of different sizes, shapes and compositions to emit light of different emission wavelengths.

[0164] The first, second, and third quantum dots may or may not contain different semiconductor materials.

[0165] A plurality of blocking sections (123) can be provided in the second pores (p2).

[0166] A plurality of blocking portions (123) may be provided in second pores (p2: pc) provided in a region corresponding to a separation region between the first p-type semiconductor (111) and the second p-type semiconductor (112), and may be provided in second pores (p2: pd) provided in a region corresponding to a separation region between the second p-type semiconductor (112) and the third p-type semiconductor (113).

[0167] The plurality of blocking portions (123) may include a first blocking portion (123a) provided in a region corresponding to a separation region between the first p-type semiconductor (111) and the second p-type semiconductor (112), and a second blocking portion (123b) provided in a region corresponding to a separation region between the second p-type semiconductor (112) and the third p-type semiconductor (113).

[0168] In other words, a plurality of blocking parts (123) may be provided in second pores (p2: pc) provided between the first color conversion part (m1) and the second color conversion part (m2), and may be provided in second pores (p2: pd) provided between the second color conversion part (m2) and the third color conversion part (m3).

[0169] A plurality of blocking parts (123) can prevent interference of light between the first color conversion part (m1) and the second color conversion part (m2) and prevent interference of light between the second color conversion part (m2) and the third color conversion part (m3), thereby reducing or eliminating the cross-talk phenomenon, thereby improving the optical characteristics of the display device (1).

[0170] More specifically, when the color of light is converted through the first color conversion unit (m1), the second color conversion unit (m2), and the third color conversion unit (m3), the plurality of blocking units (123) can block some of the light converted in the second color conversion unit (m2) from entering the first color conversion unit (m1), and can block some of the light converted in the third color conversion unit (m3) from entering the second color conversion unit (m2).

[0171] In other words, the plurality of blocking portions (123) can prevent interference of light between sub-pixels (sp1, sp2, sp3). That is, the plurality of blocking portions (123) can prevent interference of light between the first sub-pixel (sp1) and the second sub-pixel (sp2), and can prevent interference of light between the second sub-pixel (sp2) and the third sub-pixel (sp3).

[0172] Each blocking member (123) may include an absorbent material or a reflective material.

[0173] The absorbent material may contain nickel (Ni).

[0174] The absorbent material may also include a UV-curable acrylic resin, urethane resin, epoxy resin, etc. containing a black pigment or black dye.

[0175] The reflective material may include nanoparticle materials.

[0176] The reflective material may include titanium dioxide (TiO2).

[0177] The reflective material may also contain aluminum (Al) or silver (Ag).

[0178] The absorbent material or reflective material can be applied to the second pores (p2) by ink jetting or coating.

[0179] Figure 5c is a modified example of the light emitting element shown in Figure 5b.

[0180] The arrangement of the color filter layer (140) can be determined by the type of color conversion material included in the plurality of color conversion sections of the second semiconductor layer (120), the ratio between the amount of the color conversion material and the amount of the light diffusing agent, the density of the color conversion material in each pore, etc.

[0181] When the color conversion rate for the color of light converted in each color conversion unit (122) is lower than the reference conversion rate, the light emitting element may further include a color filter layer (140).

[0182] The light-emitting element includes a first semiconductor layer (110), a second semiconductor layer (120), and an active layer (130), and may further include a color filter layer (140). Here, the configuration of the first semiconductor layer (110), the second semiconductor layer (120), and the active layer (130) is the same as in FIGS. 5A and 5B, and thus, description thereof is omitted.

[0183] The color filter layer (140) may be provided adjacent to the first surface of the second semiconductor layer (120).

[0184] The color filter layer (140) can increase the color reproducibility of light of colors converted by a plurality of color conversion units (122).

[0185] The color filter layer (140) may include a first color filter (141) having a first color, a second color filter (142) having a second color, and a third color filter (143) having a third color.

[0186] Here, the first color filter (141) may be a red filter, the second color filter (142) may be a green filter, and the third color filter (143) may be a blue filter.

[0187] The first color filter (141) may be provided in an area corresponding to the first color conversion unit (m1), the second color filter (142) may be provided in an area corresponding to the second color conversion unit (m2), and the third color filter (143) may be provided in an area corresponding to the third color conversion unit (m3).

[0188] In other words, the first color filter (141) may be provided in an area corresponding to the first sub-pixel (sp1), the second color filter (142) may be provided in an area corresponding to the second sub-pixel (sp2), and the third color filter (143) may be provided in an area corresponding to the third sub-pixel (sp3).

[0189] The first color filter (141), the second color filter (142), and the third color filter (143) can be formed on one side of the first, second, and third color conversion units (m1, m2, m3) by a coating method.

[0190] The first color filter (141) can increase the color reproducibility of light of a color converted by the first color conversion unit (m1), the second color filter (142) can increase the color reproducibility of light of a color converted by the second color conversion unit (m2), and the third color filter (143) can increase the color reproducibility of light of a color converted by the third color conversion unit (m3).

[0191] That is, the first color filter (141) can increase the color reproducibility of red light, the second color filter (142) can increase the color reproducibility of green light, and the third color filter (143) can increase the color reproducibility of blue light.

[0192] FIG. 6a and FIG. 6b are examples of optical paths between the second and third color conversion units of the light emitting element illustrated in FIG. 5b.

[0193] FIG. 6a is an example of an optical path between the second and third color conversion sections (m2, m3) of a light-emitting element having a blocking section (123) including an absorbing material.

[0194] Among the light generated in the active layer (130) and converted in the third color conversion unit (m3), light moving to the second color conversion unit (m2) can be blocked by the absorbing material of the blocking unit (123).

[0195] That is, the blocking unit (123) can block some of the light from the third color conversion unit (m3) that flows into the second color conversion unit (m2). This can reduce crosstalk between the second color conversion unit (m2) and the third color conversion unit (m3).

[0196] FIG. 6b is an example of an optical path between the second and third color conversion sections (m2, m3) of a light-emitting element having a blocking section (123) including a reflective material.

[0197] Among the light generated in the active layer (130) and converted in the third color conversion unit (m3), light moving to the second color conversion unit (m2) can be reflected by the reflective material of the blocking unit (123). That is, the blocking unit (123) can prevent some of the light converted in the third color conversion unit (m3) from flowing into the second color conversion unit (m2) by reflecting some of the light. This can reduce crosstalk between the second color conversion unit (m2) and the third color conversion unit (m3).

[0198] The reflective material of the plurality of blocking parts (123) provided in the light-emitting element can improve the front brightness of the display device.

[0199] FIGS. 7A to 7O are examples of flowcharts of a method for manufacturing a light-emitting element illustrated in FIG. 5B.

[0200] Figures 7a to 7o are flowcharts of a manufacturing method for forming a plurality of color conversion parts and a plurality of blocking parts through a coating method.

[0201] As illustrated in Fig. 7a, the first process is to create an initial light-emitting device by stacking a first semiconductor layer (110), an activation layer (130), and a second semiconductor layer (120). Creating the initial light-emitting device may include creating the light-emitting device through an epitaxial method.

[0202] The initial light-emitting element may be a state in which there are no pores in the n-type semiconductor (121) of the second semiconductor layer (120). The initial light-emitting element may be a blue light-emitting element that emits blue light through the entire area of ​​the first surface of the second semiconductor layer.

[0203] As illustrated in FIG. 7b, the second process is to form a photoresist layer (150) on the first surface of the n-type semiconductor (121) by coating a photoresist (PR) on the n-type semiconductor (121) of the second semiconductor layer (120).

[0204] The coating method may include spin coating or slit coating.

[0205] As shown in Fig. 7c, the third process is to align the mask on the photoresist layer (150), expose it by irradiating it with light, and then form patterns on the photoresist layer (150) through development.

[0206] The mask may have patterns engraved on it to form multiple pores.

[0207] As shown in FIG. 7d, the fourth process is to form patterns corresponding to the patterns of the photoresist layer (150) on the n-type semiconductor (121) through etching and then strip the photoresist layer (150).

[0208] The patterns formed in the n-type semiconductor (121) may be patterns corresponding to a plurality of pores (p1, p2).

[0209] As illustrated in FIG. 7e, the fifth process is to coat a red photoresist (151) on an n-type semiconductor (121) in which a plurality of pores (p1, p2) are formed, thereby filling the plurality of pores with the red photoresist.

[0210] Filling the plurality of pores with red photoresist may include loading the plurality of pores with red photoresist.

[0211] The red photoresist (151) may be a material in which a light diffusing agent and a first color conversion material are mixed.

[0212] The coating method may include spin coating or slit coating.

[0213] As shown in FIG. 7f, the sixth process performs lithography after aligning the mask (152) to the remaining area except for some area where the first color conversion part (m1) will be formed.

[0214] Performing lithography involves exposing and developing.

[0215] As shown in FIG. 7g, the seventh process is to peel off the red photoresist (151) formed in the remaining area except for the area where the first color conversion part (m1) is to be formed, thereby forming the first color conversion part (m1) by the red photoresist (151) remaining in the area.

[0216] Stripping the red photoresist (151) formed in the remaining area includes stripping the second color pores (pg) and third color pores (pb) among the first pores and the red photoresist (151) filled in the second pores (p2).

[0217] As illustrated in FIG. 7h, the eighth process is to coat the remaining areas of the n-type semiconductor (121) except for the area of ​​the first color conversion part (m1) with a green photoresist (153), thereby filling the remaining pores with the green photoresist. Here, the remaining pores include the second color pore (Pg) and the third color pore (pb) among the first pores, and further include the second pores (p2).

[0218] The green photoresist may include a light diffusing agent and a second color conversion material.

[0219] As illustrated in FIG. 7i, the ninth process is to perform lithography after aligning the mask (154) in the remaining area except for the area where the first color conversion unit (m1) and the second color conversion unit (m2) are to be formed.

[0220] As illustrated in FIG. 7j, the 10th process is to form a second color conversion portion (m2) by the green photoresist remaining in some areas by peeling off the green photoresist (153) formed in the remaining areas.

[0221] As illustrated in FIG. 7k, the 11th process is to coat a blue photoresist in the remaining area of ​​the n-type semiconductor (121) except for the areas of the first color conversion portion (m1) and the second color conversion portion (m2), thereby filling the remaining pores with the blue photoresist, align the mask in the area where the first blocking portion (123a) and the second blocking portion (123b) are to be formed, perform lithography, and then peel off the blue photoresist filled in the second pores (p2), thereby forming the third color conversion portion (m3).

[0222] The blue photoresist may contain a light diffuser.

[0223] The remaining pores filled with blue photoresist may include third color pores (pb) and second color pores (p2) among the first pores.

[0224] The third color conversion unit (m3) can also be formed by scattering blue photoresist over the area where the third color conversion unit (m3) is to be formed.

[0225] The area where the third color conversion unit (m3) is to be formed may include an area where third color pores (pb) are formed.

[0226] As illustrated in FIG. 7l, the 12th process forms a first blocking portion (123a) and a second blocking portion (123b) by coating an absorbing material or a reflecting material on an n-type semiconductor (121) on which first, second, and third color conversion portions (m1, m2, 3) are formed.

[0227] By coating an absorbent material or a reflective material on the n-type semiconductor (121), the second pores (p2) can be filled with an absorbent material or a reflective material.

[0228] The coating method may include spin coating or slit coating.

[0229] As illustrated in FIG. 7m, the 13th process is to align a mask (155) on an n-type semiconductor (121) on which first, second, and third color conversion sections (m1, m2, m3) are formed, and heat is applied to harden the first blocking section (123a) and the second blocking section (123b). At this time, it is also possible to remove reflective or absorbent materials remaining in the first, second, and third color conversion sections (m1, m2, m3) by performing exposure and development.

[0230] As illustrated in FIG. 7n, the 14th process is to bake a light-emitting element in which the first, second, and third color conversion parts (m1, m2, and m3) and the first and second blocking parts (123a, 123b) are formed.

[0231] Through these processes, the light-emitting element illustrated in Fig. 7o can be completed.

[0232] FIGS. 8A to 8E are other examples of a flowchart of a method for manufacturing a light-emitting element illustrated in FIG. 5B.

[0233] Figures 8a to 8e are flowcharts of a manufacturing method for forming a plurality of color conversion parts and a plurality of blocking parts using an ink jet method.

[0234] First, a plurality of pores (p1, p2) are formed in an n-type semiconductor (121) through a process such as FIG. 7a, FIG. 7b, FIG. 7c, and FIG. 7d.

[0235] As illustrated in Fig. 8a, the first process is to form a first color conversion part (m1) by dispensing red ink using an ink jet method into a region where first color pores (pr) are formed among regions of an n-type semiconductor where a plurality of pores (p1, p2) are formed.

[0236] As illustrated in Fig. 8b, the second process is to form the second and third color conversion parts (m2, m3) through the same process as the formation process of the first color conversion part (m1).

[0237] That is, the second process is to form a second color conversion section (m2) by dispensing green ink using an ink jet method in an area where second color pores (pg) are formed among the areas of the n-type semiconductor, and to form a third color conversion section (m3) by dispensing blue ink using an ink jet method in an area where third color pores (pb) are formed among the areas of the n-type semiconductor.

[0238] The third color conversion unit (m3) can also be formed by scattering blue photoresist over the area where the third color conversion unit (m3) is to be formed.

[0239] As illustrated in Fig. 8c, the third process is to form the first and second blocking portions (123a, 123b) by dispensing reflective material ink or absorbing material ink using an ink jet method in the region where the second pores (p2) are formed among the regions of the n-type semiconductor.

[0240] As shown in Fig. 8d, the fourth process is to bake a light-emitting element in which the first, second, and third color conversion parts (m1, m2, and m3) and the first and second blocking parts (123a, 123b) are formed.

[0241] Through these processes, the light-emitting element illustrated in Fig. 8e can be completed.

[0242] Figures 9a to 9l are flowcharts of a method for manufacturing the light-emitting element illustrated in Figure 5c.

[0243] As illustrated in Fig. 9a, the first process is to prepare a light-emitting element including an n-type semiconductor (121) provided with first, second, and third color conversion sections (m1, m2, m3) and first and second blocking sections (123a, 123b).

[0244] As illustrated in FIG. 9b, the second process is to form a photoresist layer (160) for a first color filter on a first surface of the first semiconductor layer (120) by coating a photoresist (PR) for a first color filter on a second semiconductor layer (120) including an n-type semiconductor (121) provided with first, second, and third color conversion sections (m1, m2, m3) and first and second blocking sections (123a, 123b). The photoresist for the first color filter may be a red photoresist.

[0245] The coating method may include spin coating or slit coating.

[0246] As shown in Fig. 9c, the third process is to align a mask (161) to the remaining areas of the photoresist layer (160) for the first color filter, excluding the area of ​​the first color conversion part (m1), and then perform development after irradiating light to expose the area.

[0247] As illustrated in FIG. 9d, the fourth process is to form a first color filter (141) in the area of ​​the first color conversion unit (m1) by stripping the photoresist layer (160) for the first color filter coated in the remaining area from the second semiconductor layer (120).

[0248] As shown in Fig. 9e, the fifth process is to bake the light emitting element in which the first color filter (141) is formed.

[0249] As illustrated in FIG. 9f, the sixth process forms a photoresist layer (162) for a second color filter on a portion of the first surface of the first semiconductor layer (120) by coating the photoresist (162) for a second color filter on a portion of the first surface of the second semiconductor layer (120). The photoresist for the second color filter may be a green photoresist.

[0250] A portion of the first surface of the second semiconductor layer (120) may include an area excluding an area of ​​the first surface of the second semiconductor layer (120) where the first color filter is formed.

[0251] As illustrated in FIG. 9g, the seventh process is to align a mask (163) in the remaining areas of the photoresist layer (160) for the second color filter, excluding the areas of the first color conversion section (m1) and the second color conversion section (m2), and then perform development by irradiating light to expose the area.

[0252] As illustrated in FIG. 9h, the eighth process is to strip the photoresist layer (162) for the second color filter coated on the area of ​​the third color conversion unit (m3) and the areas of the first and second blocking units (123a, 123b) from the second semiconductor layer (120), thereby forming a second color filter (142) in the area of ​​the second color conversion unit (m2), and to bake the light-emitting element on which the second color filter (142) is formed.

[0253] As illustrated in FIG. 9i, the ninth process forms a photoresist layer (164) for a third color filter on a portion of the first surface of the first semiconductor layer (120) by coating a photoresist (164) for a third color filter on a portion of the first surface of the second semiconductor layer (120) on which the first color filter (141) and the second color filter (141) are formed. The photoresist for the third color filter may be a blue photoresist.

[0254] A portion of the first surface of the second semiconductor layer (120) may include the regions of the first and second blocking portions (123a, 123b) and the region of the third color conversion portion (m3).

[0255] As illustrated in FIG. 9j, the 10th process is to align a mask (165) in the remaining areas of the photoresist layer (160) for the third color filter, excluding the areas of the first color conversion section (m1), the second color conversion section (m2), and the third color conversion section (m3), and then perform development by irradiating light to expose the remaining areas. The remaining areas may be areas of the first and second blocking sections (123a, 123b).

[0256] As shown in FIG. 9k, the 11th process is to strip the photoresist layer (164) for the third color filter coated in the areas of the first and second blocking portions (123a, 123b) from the second semiconductor layer (120), thereby forming a third color filter (143) in the area of ​​the third color conversion portion (m3), and to bake the light-emitting element on which the third color filter (143) is formed.

[0257] Through these processes, the light-emitting element illustrated in Fig. 9l can be completed.

[0258] Figures 10a and 10b are detailed structural examples of a light-emitting element provided in a display device according to another embodiment. A description will be given of a single pixel structure.

[0259] The light-emitting element may include a first semiconductor layer (110), a second semiconductor layer (120), and an active layer (130).

[0260] As illustrated in FIG. 10a, the first semiconductor layer (110) may include a first p-type semiconductor (111), a second p-type semiconductor (112), and a third p-type semiconductor (113).

[0261] The first p-type semiconductor (111), the second p-type semiconductor (112), and the third p-type semiconductor (113) can be arranged spaced apart from each other at a certain interval in the first semiconductor layer (110).

[0262] The second semiconductor layer (120) may be a layer having a first thickness (d1).

[0263] The second semiconductor layer (120) may include an n-type semiconductor (121).

[0264] An n-type semiconductor (121) can be formed into a structure in which a plurality of pores are formed. The structure in which a plurality of pores are formed is a porous structure and may be a nano-porous structure.

[0265] The active layer (130) may be provided between the first semiconductor layer (110) and the second semiconductor layer (120). That is, the first semiconductor layer (110) may be in contact with the first surface of the active layer (130), and the second semiconductor layer (120) may be in contact with the second surface of the active layer.

[0266] The active layer (130) may include a single quantum well structure (SQW) or a multi-quantum well structure (MQW).

[0267] The active layer (130) may be a layer having a second thickness (d2).

[0268] The active layer (130) may include extended pores, each of which is an extension of the second pores of the second semiconductor layer.

[0269] A plurality of pores formed in the n-type semiconductor (121) and a plurality of extended pores formed in the active layer may be columnar in shape. Each pore (p1, p2) may have a diameter of several nm to several μm.

[0270] That is, first and second pores can be provided in the second semiconductor layer, and extended pores that are extensions of the second pores can be provided in the active layer.

[0271] A plurality of first pores (p1) can be provided in a region corresponding to a region in which a first p-type semiconductor (111), a second p-type semiconductor (112), and a third p-type semiconductor (113) are arranged among regions of an n-type semiconductor (121).

[0272] More specifically, the plurality of first pores (p1) may include first color pores (pr) provided in an area corresponding to an area where a first p-type semiconductor (111) is arranged, second color pores (pg) provided in an area corresponding to an area where a second p-type semiconductor (112) is arranged, and third color pores (pb) provided in an area corresponding to an area where a third p-type semiconductor (113) is arranged.

[0273] Among the plurality of pores, the first pores may have the first length.

[0274] The first pores may have a length corresponding to the first thickness (d1) of the n-type semiconductor (121). The first pores may have a length from the first surface of the n-type semiconductor (121) to the second surface of the n-type semiconductor (121).

[0275] The first surface of the n-type semiconductor (121) is a surface from which light is emitted, and the second surface of the n-type semiconductor (121) is a surface that contacts the active layer (130), and may be the second surface of the active layer (130).

[0276] A plurality of second pores (p2) may be provided in a region corresponding to a separation region between a first p-type semiconductor (111) and a second p-type semiconductor (112) among regions of an n-type semiconductor (121) and a region corresponding to a separation region between a second p-type semiconductor (112) and a third p-type semiconductor (113).

[0277] The plurality of second pores (p2) may include second pores (pc) provided between the first and second color pores, and second pores (pd) provided between the second and third color pores.

[0278] Among the plurality of pores, the second pores (p2) may have a second length. Here, the second length may be longer than the first length.

[0279] The second pores (p2) may have a length corresponding to the sum of the first thickness (d1) of the second semiconductor layer (120) and the second thickness (d2) of the active layer (130).

[0280] The second pores (p2) may have a length from the first surface of the n-type semiconductor (121) to the first surface of the active layer (130).

[0281] The first surface of the n-type semiconductor (121) may be a surface from which light is emitted, and the first surface of the active layer (130) may be a surface where the first semiconductor layer (110) and the active layer (130) come into contact.

[0282] As illustrated in FIG. 10b, the second semiconductor layer (120) may further include a plurality of color conversion parts (122) provided in the first pores (p1) of the n-type semiconductor (121), and a plurality of blocking parts (123) provided in the second pores (p2) of the n-type semiconductor (121) and the extended pores of the active layer (130). The extended pores of the active layer (130) may be part of the second pores (p2).

[0283] A plurality of color conversion units (122) can convert light generated from the active layer (130) into light of first, second, and third colors. The first color may be red (R), the second color may be green (G), and the third color may be blue (B).

[0284] The plurality of color conversion units (122) may include a first color conversion unit (m1) that converts light generated from the active layer (130) into light of a first color, a second color conversion unit (m2) that converts light generated from the active layer (130) into light of a second color, and a third color conversion unit (m3) that converts light generated from the active layer (130) into light of a third color.

[0285] The first color conversion unit (m1) may be provided in the first color pore (pr), the second color conversion unit (m2) may be provided in the second color pore (pg), and the third color conversion unit (m3) may be provided in the third color pore (pb).

[0286] The first color conversion unit (m1) may be provided in an area corresponding to the first p-type semiconductor (111) among the areas of the first semiconductor layer (110), the second color conversion unit (m2) may be provided in an area corresponding to the second p-type semiconductor (112), and the third color conversion unit (m3) may be provided in an area corresponding to the third p-type semiconductor (113).

[0287] The first color conversion unit (m1) can form a first sub-pixel (sp1), the second color conversion unit (m2) can form a second sub-pixel (sp2), and the third color conversion unit (m3) can form a third sub-pixel (sp3).

[0288] Each color conversion unit (122) may include a light diffusing agent and may further include a color conversion material.

[0289] The light diffusing agent can be provided in the first color pores (pr), the second color pores (pg), and the third color pores (pb).

[0290] The color conversion material can be provided in the first color pores (pr) and the second color pores (pg) among the first pores. The color conversion material can also be provided in the third color pore (pb).

[0291] That is, the first color conversion unit (m1) may include a light diffusing agent and a first color conversion material, the second color conversion unit (m2) may include a light diffusing agent and a second color conversion material, and the third color conversion unit (m3) may include a light diffusing agent. The third color conversion unit (m3) may also include a light diffusing agent and a third color conversion material.

[0292] The light diffusing agents of the first, second, and third color conversion units (m1, m2, m3) may be the same or different.

[0293] The first, second, and third color conversion materials may differ in at least one of the type, size, and shape of the color conversion material.

[0294] The first, second, and third color conversion materials may have different compositions among the color conversion materials.

[0295] The first color conversion part (m1) can be formed by coating or ink-jetting a light diffusing agent and a first color conversion material onto the first color pores (pr) of an n-type semiconductor.

[0296] The second color conversion section (m2) can be formed by coating or ink-jetting a light diffusing agent and a second color conversion material onto the second color pores (pg) of the n-type semiconductor.

[0297] The third color conversion portion (m3) can be formed by coating or ink-jetting a light diffusing agent onto the third color pores (pb) of the n-type semiconductor. When the third color conversion portion (m3) includes a color conversion material, the third color conversion portion (m3) can be formed by coating or ink-jetting the light diffusing agent and the third color conversion material onto the third color pores (pb) of the n-type semiconductor.

[0298] The color conversion material may include at least one of a quantum dot (QD) and a fluorescent substance. For example, the color conversion material may include only quantum dots. The color conversion material may include quantum dots and a fluorescent substance. The color conversion material may include quantum dots and a fluorescent substance.

[0299] The first color conversion material may include at least one of the first quantum dot and the first phosphor, the second color conversion material may include at least one of the second quantum dot and the second phosphor, and the third color conversion material may include at least one of the third quantum dot and the third phosphor.

[0300] The first, second, and third quantum dots may differ in at least one of the type, size, and shape of the quantum dot material.

[0301] A plurality of blocking portions (123) may be provided in the second pores (p2). Here, the second pores may include secondary pores of the n-type semiconductor (121) and extended pores of the active layer (130).

[0302] A plurality of blocking portions (123) may be provided in second pores (p2: pc) provided in a region corresponding to a separation region between the first p-type semiconductor (111) and the second p-type semiconductor (112), and may be provided in second pores (p2: pd) provided in a region corresponding to a separation region between the second p-type semiconductor (112) and the third p-type semiconductor (113).

[0303] The plurality of blocking portions (123) may include a first blocking portion (123a) provided in a region corresponding to a separation region between the first p-type semiconductor (111) and the second p-type semiconductor (112), and a second blocking portion (123b) provided in a region corresponding to a separation region between the second p-type semiconductor (112) and the third p-type semiconductor (113).

[0304] In other words, a plurality of blocking parts (123) may be provided in second pores (p2: pc) provided between the first color conversion part (m1) and the second color conversion part (m2), and may be provided in second pores (p2: pd) provided between the second color conversion part (m2) and the third color conversion part (m3).

[0305] A plurality of blocking parts (123) can prevent interference of light between the first color conversion part (m1) and the second color conversion part (m2) and prevent interference of light between the second color conversion part (m2) and the third color conversion part (m3), thereby reducing or eliminating the cross-talk phenomenon, thereby improving the optical characteristics of the display device (1).

[0306] More specifically, when the color of light is converted through the first color conversion unit (m1), the second color conversion unit (m2), and the third color conversion unit (m3), the plurality of blocking units (123) can block some of the light converted in the second color conversion unit (m2) from entering the first color conversion unit (m1), and can block some of the light converted in the third color conversion unit (m3) from entering the second color conversion unit (m2).

[0307] In other words, the plurality of blocking portions (123) can prevent interference of light between sub-pixels (sp1, sp2, sp3). That is, the plurality of blocking portions (123) can prevent interference of light between the first sub-pixel (sp1) and the second sub-pixel (sp2), and can prevent interference of light between the second sub-pixel (sp2) and the third sub-pixel (sp3).

[0308] Each blocking member (123) may include an absorbent material or a reflective material.

[0309] The absorbent material may contain nickel (Ni).

[0310] The absorbent material may also include a UV-curable acrylic resin, urethane resin, epoxy resin, etc. containing a black pigment or black dye.

[0311] The reflective material may include nanoparticle materials.

[0312] The reflective material may include titanium dioxide (TiO2).

[0313] The reflective material may also contain aluminum (Al) or silver (Ag).

[0314] The absorbent material or reflective material can be applied to the second pores (p2) by ink jetting or coating.

[0315] Figure 10c is a modified example of the light emitting element shown in Figure 10b.

[0316] The arrangement of the color filter layer (140) can be determined by the type of color conversion material included in the plurality of color conversion sections of the second semiconductor layer (120), the ratio between the amount of the color conversion material and the amount of the light diffusing agent, the density of the color conversion material in each pore, etc.

[0317] When the color conversion rate for the color of light converted in each color conversion unit (122) is lower than the reference conversion rate, the light emitting element may further include a color filter layer (140).

[0318] The light-emitting element includes a first semiconductor layer (110), a second semiconductor layer (120), and an active layer (130), and may further include a color filter layer (140). Here, the configuration of the first semiconductor layer (110), the second semiconductor layer (120), and the active layer (130) is the same as in FIGS. 10A and 10B, and thus, description thereof is omitted.

[0319] The color filter layer (140) may be provided adjacent to the first surface of the second semiconductor layer (120).

[0320] The color filter layer (140) may include a first color filter (141) having a first color, a second color filter (142) having a second color, and a third color filter (143) having a third color.

[0321] Here, the first color filter (141) may be a red filter, the second color filter (142) may be a green filter, and the third color filter (143) may be a blue filter.

[0322] The first color filter (141) may be provided in an area corresponding to the first color conversion unit (m1), the second color filter (142) may be provided in an area corresponding to the second color conversion unit (m2), and the third color filter (143) may be provided in an area corresponding to the third color conversion unit (m3).

[0323] In other words, the first color filter (141) may be provided in an area corresponding to the first sub-pixel (sp1), the second color filter (142) may be provided in an area corresponding to the second sub-pixel (sp2), and the third color filter (143) may be provided in an area corresponding to the third sub-pixel (sp3).

[0324] The first color filter (141), the second color filter (142), and the third color filter (143) can be formed on one side of the first, second, and third color conversion units (m1, m2, m3) by a coating method.

[0325] The first color filter (141) can increase the color reproducibility of light of a color converted by the first color conversion unit (m1), the second color filter (142) can increase the color reproducibility of light of a color converted by the second color conversion unit (m2), and the third color filter (143) can increase the color reproducibility of light of a color converted by the third color conversion unit (m3).

[0326] That is, the first color filter (141) can increase the color reproducibility of red light, the second color filter (142) can increase the color reproducibility of green light, and the third color filter (143) can increase the color reproducibility of blue light.

[0327] Fig. 11a is an example diagram of a color filter layer provided in the light-emitting element illustrated in Fig. 10c, and Figs. 11b and 11c are examples of variations of the color filter layer.

[0328] As shown in Fig. 11a, the first color filter (141), the second color filter (142), and the third color filter (143) may be arranged in a row but spaced apart at regular intervals.

[0329] The first color filter (141) and the second color filter (142) can be arranged spaced apart from each other by a distance corresponding to the width of the first blocking portion, and the second color filter (142) and the third color filter (143) can be arranged spaced apart from each other by a distance corresponding to the width of the second blocking portion (123b).

[0330] As illustrated in FIGS. 11b and 11c, the first color filter (141) and the third color filter (143) may be arranged in a row, and the second color filter (142) may be arranged in a direction perpendicular to the first color filter (141) and the third color filter (143) arranged in a row. The second color filter (142) may have a size corresponding to the combined size of the first and third color filters (141, 143).

[0331] As illustrated in FIG. 11c, the first color conversion unit (m1) may be provided in an area corresponding to the first color filter (141) among the areas of the second semiconductor layer (120), the second color conversion unit (m2) may be provided in an area corresponding to the second color filter (142) among the areas of the second semiconductor layer, and the third color conversion unit (m3) may be provided in an area corresponding to the third color filter (143) among the areas of the second semiconductor layer.

[0332] The first blocking portion (123a) may be provided in an area between the first color conversion portion (m1) and the third color conversion portion (m3) among the areas of the second semiconductor layer (120).

[0333] The second blocking section (123b) can be provided in the area between the first color conversion section (m1) and the second color conversion section (m2) and in the area between the third color conversion section (m3) and the second color conversion section (m2).

[0334] The first color conversion unit, the second color conversion unit, and the third color conversion unit may be provided in the first pores of the second semiconductor layer, and the first and second blocking units may be provided in the second pores of the second semiconductor layer.

[0335] The first p-type semiconductor (111) of the first semiconductor layer may be provided in an area corresponding to the first color conversion section (m1), the second p-type semiconductor (112) of the first semiconductor layer may be provided in an area corresponding to the second color conversion section (m2), and the third p-type semiconductor (113) of the first semiconductor layer may be provided in an area corresponding to the third color conversion section (m3).

[0336] Figures 12a and 12b are examples of optical paths between the second and third color conversion units of the light emitting element illustrated in Figure 10b.

[0337] Fig. 12a is an example of a light path between the second and third color conversion sections (m2, m3) of a light emitting element having a blocking section (123) including an absorbing material.

[0338] Among the light generated in the active layer (130) and converted in the third color conversion unit (m3), light moving to the second color conversion unit (m2) can be blocked by the absorbing material of the blocking unit (123).

[0339] That is, the blocking unit (123) can block some of the light from the third color conversion unit (m3) that flows into the second color conversion unit (m2). This can reduce crosstalk between the second color conversion unit (m2) and the third color conversion unit (m3).

[0340] The blocking unit (123) can divide an area of ​​the active layer (130). This can prevent light from traveling from one area of ​​the active layer to another area of ​​the active layer. In addition, light generated in one area of ​​the active layer can be allowed to travel to a color conversion unit connected to one area, and can be prevented from traveling to another color conversion unit.

[0341] FIG. 6b is an example of an optical path between the second and third color conversion sections (m2, m3) of a light-emitting element having a blocking section (123) including a reflective material.

[0342] Among the light generated in the active layer (130) and converted in the third color conversion unit (m3), light moving to the second color conversion unit (m2) can be reflected by the reflective material of the blocking unit (123). That is, the blocking unit (123) can prevent some of the light converted in the third color conversion unit (m3) from flowing into the second color conversion unit (m2) by reflecting some of the light. This can reduce crosstalk between the second color conversion unit (m2) and the third color conversion unit (m3).

[0343] The reflective material of the plurality of blocking parts (123) provided in the light-emitting element can improve the front brightness of the display device.

[0344] The blocking portion (123) can divide an area of ​​the active layer (130). This can prevent light from traveling from one area of ​​the active layer to another area of ​​the active layer, and can allow light traveling in one area of ​​the active layer to be reflected by the blocking portion (123) and travel only within one area of ​​the active layer.

[0345] Additionally, it is possible to cause light generated in one area of ​​the active layer to travel to a color conversion unit connected to one area and prevent it from traveling to another color conversion unit.

[0346] Figures 13a to 13e are flowcharts of a method for manufacturing the light-emitting element illustrated in Figure 10b.

[0347] First, a plurality of first pores (p1) are formed in the n-type semiconductor (121) of the second semiconductor layer through a process such as FIG. 7a, FIG. 7b, FIG. 7c, and FIG. 7d.

[0348] The patterns formed in the n-type semiconductor (121) may be patterns corresponding to a plurality of first pores (p1).

[0349] As illustrated in FIG. 13a, the first process is to form a photoresist layer (171) on the first surface of an n-type semiconductor (121) by coating a photoresist (PR) on an n-type semiconductor (121) having a plurality of pores formed thereon, align a mask on the photoresist layer (171), expose the photoresist layer by irradiating it with light, and then form patterns (172) on the photoresist layer (171) through development.

[0350] The mask may have patterns engraved on it to form secondary pores.

[0351] The coating method may include spin coating or slit coating.

[0352] As shown in Fig. 13b, the second process is to form patterns corresponding to the patterns of the photoresist layer (171) on the n-type semiconductor (121) and the active layer (130) through etching, and then strip the photoresist layer (171).

[0353] The patterns formed in the n-type semiconductor (121) and the active layer (130) may be patterns corresponding to a plurality of second pores (p2). That is, second pores may be formed in the n-type semiconductor (121), and extended pores formed by extending the second pores of the n-type semiconductor (121) may be formed in the active layer (130).

[0354] Through the first and second processes, second pores longer than the first pores can be formed in the light-emitting element.

[0355] As shown in Fig. 13c, the third process is to form the first, second, and third color conversion sections and the first and second blocking sections on the n-type semiconductor (121) through a coating process such as Figs. 7e, 7f, 7g, 7h, 7i, 7j, 7k, 7l, and 7m.

[0356] Alternatively, the first, second, and third color conversion sections and the first and second blocking sections may be formed on the n-type semiconductor (121) through an inkjet process such as FIGS. 8a, 8b, and 8c. In this case, the operating times of the inkjet for forming the first, second, and third color conversion sections and the operating times of the inkjet for forming the first and second blocking sections may be different.

[0357] As shown in Fig. 13d, the fourth process is to bake the light-emitting element in which the first, second, and third color conversion sections and the first and second blocking sections are formed.

[0358] Through these processes, the production of the light-emitting element illustrated in Fig. 13e can be completed.

[0359] Meanwhile, the disclosed embodiments may be implemented in the form of a recording medium storing computer-executable instructions. The instructions may be stored in the form of program code, and when executed by a processor, may generate program modules to perform the operations of the disclosed embodiments. The recording medium may be implemented as a computer-readable recording medium.

[0360] Computer-readable recording media include all types of recording media that store instructions that can be decoded by a computer. Examples include Read Only Memory (ROM), Random Access Memory (RAM), magnetic tape, magnetic disk, flash memory, and optical data storage devices. The disclosed embodiments have been described above with reference to the attached drawings. Those skilled in the art will appreciate that the present invention can be implemented in forms other than the disclosed embodiments without changing the technical spirit or essential characteristics of the present invention. The disclosed embodiments are illustrative and should not be construed as limiting.

Claims

1. Active layer; A first semiconductor layer provided on the first surface of the above active layer; and A second semiconductor layer provided on the second surface of the above active layer; The above first semiconductor layer includes a plurality of semiconductor regions, each of which includes a plurality of semiconductors, and a plurality of separation regions provided between the plurality of semiconductor regions. A display device wherein the second semiconductor layer comprises a plurality of first pores provided in a region of the second semiconductor layer corresponding to the plurality of semiconductor regions of the first semiconductor layer, a plurality of second pores provided in a region of the second semiconductor layer corresponding to the plurality of spaced regions of the first semiconductor layer, a plurality of color conversion sections provided in each of the plurality of first pores and converting light generated in the activation layer into light of different colors, and a plurality of blocking sections provided in each of the plurality of second pores and preventing interference between the lights converted into different colors.

2. In paragraph 1, The above plurality of first and second pores are formed in the direction from the first surface of the second semiconductor layer to the second surface of the active layer, The length of the plurality of first and second pores has a length corresponding to the thickness of the second semiconductor layer, A display device wherein the first surface of the second semiconductor layer is a surface from which light is emitted.

3. In paragraph 1, The above-mentioned activation layer includes extended pores formed by extending the plurality of second pores, The plurality of first pores are formed in the direction from the first surface of the second semiconductor layer to the second surface of the active layer, A display device in which the plurality of second pores are formed in the direction of the first surface of the second semiconductor layer toward the first surface of the active layer.

4. In paragraph 3, The length of the plurality of first pores has a length corresponding to the thickness of the second semiconductor layer, A display device wherein the length of the plurality of second pores has a length corresponding to the thickness of the second semiconductor layer and the thickness of the active layer combined.

5. In paragraph 1, Each of the above plurality of semiconductors includes a p-type semiconductor, The second semiconductor layer includes an n-type semiconductor, The above activation layer is a display device including a quantum well structure (MQW).

6. In paragraph 1, A display device further comprising a color filter layer including a first color filter, a second color filter, and a third color filter arranged in a row and respectively adjacent to the plurality of color conversion units.

7. In paragraph 1, It further includes a color filter layer including a first color filter, a second color filter, and a third color filter respectively provided adjacent to the plurality of color conversion units, The above first color filter and the above third color filter are arranged in a row, A display device in which the second color filter is arranged in a direction perpendicular to the first color filter and the third color filter arranged in the row, and has a size corresponding to a size greater than the combined size of the first and third color filters.

8. In paragraph 1, The plurality of color conversion units include a first color conversion unit that converts light generated in the active layer into light of a first color, a second color conversion unit that converts light generated in the active layer into light of a second color, and a third color conversion unit that converts light generated in the active layer into light of a third color. The above first and second color conversion parts include a light diffusion agent and a color conversion material, The above third color conversion unit includes the light diffusion agent, The above color conversion material comprises at least one of a quantum dot and a fluorescent substance, The above plurality of blocking parts include a first blocking part provided in a plurality of second pores between the first color conversion part and the second color conversion part, and a second blocking part provided in a plurality of second pores between the second color conversion part and the third color conversion part. The above first and second blocking parts are a display device including an absorbent material or a reflective material.

9. An active layer and a second semiconductor layer are laminated on a first semiconductor layer including a plurality of semiconductor regions each having a plurality of semiconductors and a plurality of separation regions provided between the plurality of semiconductor regions, A plurality of first pores are formed in a region of the second semiconductor layer corresponding to the plurality of semiconductor regions of the first semiconductor layer, and a plurality of second pores are formed in a region of the second semiconductor layer corresponding to the plurality of spaced regions of the first semiconductor layer. Forming a plurality of color conversion parts in the plurality of first pores, A method for manufacturing a display device, wherein a plurality of blocking portions are formed in the plurality of second pores.

10. In the 9th paragraph, forming the plurality of first and second pores is as follows: Coating the second semiconductor layer with photoresist, Align the mask to the above photoresist, Forming a pattern on the second semiconductor layer by performing lithography, Including peeling off the above photoresist, A method for manufacturing a display device, wherein the pattern formed on the second semiconductor layer is a pattern corresponding to the plurality of first and second pores.

11. In the 9th paragraph, forming the plurality of color conversion parts is A method for manufacturing a display device, comprising forming a first color conversion unit, a second color conversion unit, and a third color conversion unit using a coating method or an inkjet method.

12. In paragraph 9, forming the plurality of blocking parts comprises: A method for manufacturing a display device, comprising forming a first blocking portion and a second blocking portion using a coating method or an ink jet method.

13. In paragraph 9, A method for manufacturing a display device further comprising forming a color filter layer by using a coating method on a second semiconductor layer on which the plurality of color conversion sections and the plurality of blocking sections are formed.

14. In the 9th paragraph, forming the plurality of first and second pores is as follows: Coating the first photoresist on the second semiconductor layer, Align the first mask to the first photoresist, Performing lithography to form a first pattern on the second semiconductor layer, Peel off the above first photoresist, Coating the second photoresist on the second semiconductor layer, Align the second mask to the second photoresist, By performing lithography, the second pattern is formed on the second semiconductor layer and the active layer, Including peeling off the second photoresist, The first pattern formed on the second semiconductor layer is a pattern corresponding to the plurality of first pores, A method for manufacturing a display device, wherein the second pattern formed on the second semiconductor layer and the active layer is a pattern corresponding to the plurality of second pores.

15. In paragraph 14, forming the plurality of blocking parts comprises: A method for manufacturing a display device, comprising loading a reflective material or an absorbing material into a plurality of second pores between the plurality of color conversion sections.

Images