Member for semiconductor manufacturing apparatus

Abstract

A wafer mounting table 10, which is one example of this member for a semiconductor manufacturing apparatus, comprises a ceramic plate 20, a base plate 30, a base plate through hole 34, an insulating tube 50, and an adhesive layer 60. The adhesive layer 60 has: an insulating tube upper surface adhesive part 61 that bonds together a lower surface 23 of the ceramic plate 20 and an upper surface 50a of the insulating tube 50; and an insulating tube outer circumferential surface adhesive part 62 that is continuous from the insulating tube upper surface adhesive part 61 and that bonds together an inner circumferential surface 34b of the base plate through hole 34 and an outer circumferential surface 50b of the insulating tube 50. In this wafer mounting table 10, an upper surface protrusion 51 is provided to the upper surface 50a of the insulating tube 50 as a positioning structure for positioning the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50 so that there is a predetermined distance therebetween.

Description

Semiconductor manufacturing equipment components

[0001] The present invention relates to a member for a semiconductor manufacturing device.

[0002] Conventionally, semiconductor manufacturing equipment components have been known, including a ceramic plate having a wafer mounting surface on its upper surface and incorporating electrodes, and a base plate attached to the lower surface of the ceramic plate. For example, Patent Document 1 discloses such a semiconductor manufacturing equipment component, including a ceramic plate through-hole penetrating the ceramic plate in the thickness direction, a base plate through-hole penetrating the base plate in the thickness direction, and an insulating tube inserted into the base plate through-hole, with its outer periphery bonded to the inner periphery of the base plate through-hole via an adhesive layer. The insulating tube has a large-diameter portion opposite the ceramic plate and a small-diameter portion on the ceramic plate side. The outer diameter of the large-diameter portion is approximately the same as the inner diameter of the base plate through-hole, so that its central axis is hardly misaligned with the central axis of the base plate through-hole, resulting in improved thermal uniformity across the entire wafer mounting surface. It also describes how an adhesive is filled in the gap between the small-diameter portion and the base plate through-hole, allowing the insulating tube to be firmly attached to the base plate through-hole.

[0003] Registered Utility Model No. 3182120

[0004] However, for example, Patent Document 1 explains that the temperature uniformity of the wafer mounting surface is improved, but because it was not possible to control the vertical length (thickness) of the adhesive formed between the underside of the ceramic plate and the upper surface of the insulating tube, there was a problem in that the temperature in the area directly above the base plate through-hole varied from product to product.

[0005] The present invention has been made to solve such problems, and its main object is to suppress variations in temperature between products in the vicinity of the wafer mounting surface directly above the base plate through-hole.

[0006] [1] A semiconductor manufacturing equipment member of the present invention comprises: a ceramic plate having a wafer mounting surface on its upper surface and incorporating an electrode; a base plate provided on the lower surface side of the ceramic plate; a base plate through-hole that passes through the base plate in the vertical direction; an insulating tube inserted into the base plate through-hole; an adhesive layer having an insulating tube upper surface adhesive portion that bonds the lower surface of the ceramic plate to the upper surface of the insulating tube, and having an insulating tube outer surface adhesive portion that is continuous with the insulating tube upper surface adhesive portion and bonds the inner surface of the base plate through-hole to the outer surface of the insulating tube; and a positioning structure that positions the lower surface of the ceramic plate and the upper surface of the insulating tube so that the distance between them is a predetermined distance.

[0007] In this semiconductor manufacturing equipment component, the positioning structure positions the lower surface of the ceramic plate and the upper surface of the insulating tube at a predetermined distance. Therefore, the vertical length of the insulating tube's upper surface adhesive portion is constant. If the vertical length of the insulating tube's upper surface adhesive portion varies from product to product, the temperature of the wafer mounting surface in the vicinity of the base plate through-hole varies from product to product. However, since the vertical length of the insulating tube's upper surface adhesive portion is constant in this component, such variation can be suppressed. Furthermore, in this semiconductor manufacturing equipment component, the adhesive layer includes both the insulating tube's upper surface adhesive portion and the insulating tube's outer peripheral surface adhesive portion. Therefore, without using a thick adhesive layer as in Patent Document 1, it is possible to firmly bond the lower surface of the ceramic plate to the upper surface of the insulating tube and the inner peripheral surface of the base plate through-hole to the outer peripheral surface of the insulating tube.

[0008] In this specification, "upper" and "lower" do not represent absolute positional relationships, but rather relative positional relationships. Therefore, depending on the orientation of the semiconductor manufacturing equipment component, "upper" and "lower" may become "lower" and "upper," "left" and "right," or "front" and "rear."

[0009] [2] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member described in [1] above), the positioning structure may include an upper surface protrusion provided on the upper surface of the insulating tube. This creates a gap between the lower surface of the ceramic plate and the upper surface of the insulating tube that is approximately the same height as the upper surface protrusion, allowing the thickness of the insulating tube upper surface adhesive portion located in the gap to be approximately the same as the height of the upper surface protrusion. The upper surface protrusion may be an annular protrusion coaxial with the insulating tube. The outer diameter of the annular protrusion is preferably smaller than the outer diameter of the upper surface of the insulating tube. The inner diameter of the annular protrusion may be the same as or larger than the inner diameter of the insulating tube through-hole that passes through the insulating tube in the vertical direction. The semiconductor manufacturing equipment member may include a plurality of annular protrusions coaxial with the insulating tube.

[0010] [3] In the semiconductor manufacturing equipment component of the present invention (the semiconductor manufacturing equipment component described in [1] or [2] above), the positioning structure may include a peripheral protrusion provided on the outer peripheral surface of the insulating tube and a restricting portion provided on the base plate that abuts against the upper surface of the peripheral protrusion to restrict upward movement of the peripheral protrusion. By creating a gap of a predetermined thickness between the lower surface of the ceramic plate and the upper surface of the insulating tube when the peripheral protrusion abuts against the restricting portion, the thickness of the insulating tube upper surface adhesive portion located in the gap can be made approximately the same as the width of the gap. The restricting portion may be the bottom of a countersunk hole provided at the lower end of the base plate through hole.

[0011] [4] In the semiconductor manufacturing equipment component of the present invention (the semiconductor manufacturing equipment component according to any one of [1] to [3] above), the vertical position of the upper surface of the insulating tube may vary stepwise or continuously when viewed along the outer periphery of the insulating tube. This allows for precise adjustment of the temperature in the vicinity of the area directly above the base plate through-hole.

[0012] [5] In the semiconductor manufacturing equipment component of the present invention (the semiconductor manufacturing equipment component described in any one of [1] to [4] above), at least one of the inner circumferential surface of the base plate through hole and the outer circumferential surface of the insulating tube may have an adhesive pool located below the underside of the ceramic plate, and the insulating tube outer circumferential surface adhesive portion may be formed from the underside of the ceramic plate to partway through the adhesive pool. This allows the insulating tube outer circumferential surface adhesive portion to penetrate into the adhesive pool and expand substantially perpendicular to the vertical direction, making it easy to control the vertical length of the insulating tube outer circumferential surface adhesive portion. If the vertical length of the insulating tube outer circumferential surface adhesive portion varies from product to product, the temperature of the wafer mounting surface in the vicinity of the base plate through hole may vary from product to product. However, controlling the vertical length of the insulating tube outer circumferential surface adhesive portion in this case reduces such variation. The adhesive pool may be located below the top surface of the insulating tube.

[0013] [6] In the semiconductor manufacturing equipment member of the present invention (the semiconductor manufacturing equipment member described in any one of [1] to [5] above), the base plate through-hole may serve as a power supply member insertion hole that is provided in the semiconductor manufacturing equipment member downward from the electrode and through which a power supply member that supplies power to the electrode is inserted, a lift pin hole that passes through the semiconductor manufacturing equipment member in the vertical direction and through which a lift pin is inserted, or a gas hole that passes through the semiconductor manufacturing equipment member in the vertical direction and through which gas is supplied to the wafer mounting surface.

[0014] 2. A plan view of the wafer mounting table 10. A cross-sectional view taken along line A-A in FIG. 1. A partially enlarged view of FIG. 2. A perspective view of an insulating tube 50. An explanatory diagram of a process for bonding the insulating tube 50. An explanatory diagram of the results of an analysis of the relationship between the thickness of the bonding portion on the upper surface of the insulating tube and the temperature difference obtained by subtracting the temperature directly above the power feed member from the temperature at the outer periphery. An explanatory diagram of the results of an analysis of the relationship between the amount of creep-up of the bonding portion on the outer periphery of the insulating tube and the temperature difference obtained by subtracting the temperature directly above the power feed member from the temperature at the outer periphery. A perspective view of another example of the insulating tube 50. A perspective view of another example of the insulating tube 50. A perspective view of another example of the insulating tube 50. A perspective view of another example of the insulating tube 50. A partially enlarged view of another example of the wafer mounting table 10. A partially enlarged view of the wafer mounting table 110. A perspective view of an insulating tube 150. An enlarged sectional perspective view of the periphery of a base plate through-hole 134 of a base plate 130. 1 is a perspective view of another example of the insulating pipe 150. FIG. 2 is a perspective view of another example of the insulating pipe 150. FIG. 3 is an enlarged perspective cross-sectional view of the periphery of a base plate through-hole 134 of another example of the base plate 130. FIG. 4 is an enlarged perspective cross-sectional view of the periphery of a base plate through-hole 134 of another example of the base plate 130.

[0015] [First Embodiment] A preferred embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a plan view of a wafer mounting table 10, Fig. 2 is a cross-sectional view taken along line A-A in Fig. 1, Fig. 3 is an enlarged view of a portion of Fig. 2 (an enlarged view of the area enclosed by the two-dot chain line), and Fig. 4 is a perspective view of an insulating tube 50.

[0016] The wafer mounting table 10 is an example of a semiconductor manufacturing equipment component of the present invention, and as shown in FIG. 2 , includes a ceramic plate 20, a base plate 30, a bonding layer 40, a base plate through-hole 34, an insulating tube 50, and a power supply member 70.

[0017] The ceramic plate 20 is a circular ceramic plate (e.g., 300 mm in diameter and 5 mm in thickness) made of sintered alumina, sintered aluminum nitride, or the like. The upper surface of the ceramic plate 20 serves as a wafer mounting surface 21 on which a wafer W is mounted. The ceramic plate 20 incorporates an electrostatic electrode 22. Although not shown, an annular seal band is formed along the outer edge of the wafer mounting surface 21 of the ceramic plate 20, and multiple circular small protrusions are formed on the entire inner surface of the seal band. The electrostatic electrode 22 is a planar mesh electrode connected to an external DC power supply (not shown) via a power supply member 70. When a DC voltage is applied to the electrostatic electrode 22, the wafer W is attracted and fixed to the wafer mounting surface 21 by electrostatic attraction. When the DC voltage application is released, the wafer W is released from the wafer mounting surface 21.

[0018] The base plate 30 is a circular plate (e.g., a circular plate with the same diameter as or larger than the ceramic plate 20, 25 mm thick) with good electrical and thermal conductivity. A refrigerant flow path 32 through which a refrigerant circulates is formed within the base plate 30. The refrigerant flowing through the refrigerant flow path 32 is preferably a liquid, and is preferably electrically insulating. Examples of electrically insulating liquids include a fluorine-based inert liquid. As shown in FIG. 1 , the refrigerant flow path 32 is formed in a spiral shape in a plan view across the entire base plate 30 from one end (inlet 32 ​​in) to the other end (outlet 32 ​​out) in a single stroke. The inlet 32 ​​in and outlet 32 ​​out of the refrigerant flow path 32 are connected to a supply port and a recovery port of an external refrigerant device (not shown), respectively. The refrigerant supplied from the supply port of the external refrigerant device to the inlet 32in of the refrigerant flow path 32 passes through the refrigerant flow path 32, returns from the outlet 32out of the refrigerant flow path 32 to the recovery port of the external refrigerant device, and is then temperature-adjusted before being supplied again from the supply port to the inlet 32in of the refrigerant flow path 32. The base plate 30 is connected to a radio frequency (RF) power source and is also used as an RF electrode.

[0019] The base plate 30 may be made of a metal material or a metal-ceramic composite material. Metal materials include Al, Ti, Mo, and alloys thereof. Metal-ceramic composite materials include metal matrix composites (MMCs) and ceramic matrix composites (CMCs). Specific examples of such composite materials include materials containing Si, SiC, and Ti (also known as SiSiCTi), porous SiC impregnated with Al and / or Si, and composites of Al2O3 and TiC. It is preferable to select a material for the base plate 30 with a thermal expansion coefficient similar to that of the ceramic plate 20. When the ceramic plate 20 is made of alumina, the base plate 30 is preferably made of pure Ti or an α-β Ti alloy. This is because the thermal expansion coefficients of pure Ti and α-β Ti alloys are similar to that of alumina. The base plate 30 may be formed of a material with a lower thermal conductivity than Al, or may be formed of a material with a lower thermal conductivity than the material of the ceramic plate 20 (e.g., alumina). Examples of such materials include pure Ti and Ti-containing materials, such as α-β Ti. The effects of the present invention are enhanced when the base plate 30 is made of a Ti-containing material. The thermal conductivity of the base plate 30 may be 50 W / mK or less, or may be 5 to 20 W / mK. For example, the thermal conductivity of pure Ti is 17 W / mK, and the thermal conductivity of an α-β Ti alloy is 7.5 W / mK. The thermal conductivity of Al is 150 to 200 W / mK.

[0020] The bonding layer 40 is a resin adhesive layer, which bonds the lower surface 23 of the ceramic plate 20 to the upper surface of the base plate 30. Examples of materials for the resin adhesive layer include insulating resins such as epoxy resin, acrylic resin, and silicone resin. The bonding layer 40 may be made of insulating resin containing a filler. The filler preferably has a higher thermal conductivity than the insulating resin of the bonding layer 40, and may be, for example, alumina or aluminum nitride.

[0021] The base plate through-hole 34 is a generally cylindrical hole that passes through the base plate 30 in the vertical direction and is provided so as not to pass through the coolant flow path 32. The base plate through-hole 34 communicates with the bonding layer through-hole 44. The bonding layer through-hole 44 is a generally cylindrical hole that passes through the bonding layer 40 in the vertical direction.

[0022] The insulating tube 50 is housed in the base plate through-hole 34 and the bonding layer through-hole 44. The insulating tube 50 is a substantially cylindrical member made of an electrically insulating material (for example, the same material as the ceramic plate 20), and has an insulating tube through-hole 54 that passes through the insulating tube 50 in the vertical direction along the central axis of the insulating tube 50.

[0023] As shown in FIG. 3 , the insulating tube 50 is bonded to the lower surface 23 of the ceramic plate 20 and the inner circumferential surface 34b of the base plate through-hole 34 via an adhesive layer 60. The upper end of the base plate through-hole 34 has a tapered surface 34c with a C-chamfered shape. The adhesive layer 60 includes an insulating tube upper surface adhesive portion 61 that bonds the lower surface 23 of the ceramic plate 20 to the upper surface 50a of the insulating tube 50, and an insulating tube outer circumferential surface adhesive portion 62 that is continuous with the insulating tube upper surface adhesive portion 61 and bonds the inner circumferential surface 34b of the base plate through-hole 34 to the outer circumferential surface 50b of the insulating tube 50. Examples of materials for the adhesive layer 60 include insulating resins such as epoxy resin, acrylic resin, and silicone resin. The adhesive layer 60 may be made of an insulating resin containing a filler. The filler preferably has a higher thermal conductivity than the insulating resin of the adhesive layer 60, and may be, for example, alumina or aluminum nitride. The adhesive layer 60 may have a higher thermal conductivity than the bonding layer 40 .

[0024] As shown in FIGS. 3 and 4 , an upper surface protrusion 51 is provided on the upper surface 50a of the insulating tube 50. The upper surface protrusion 51 is an annular protrusion coaxial with the insulating tube 50. The inner diameter of the upper surface protrusion 51 is the same as the diameter of the insulating tube through-hole 54, and the outer diameter of the upper surface protrusion 51 is smaller than the outer diameter of the upper surface 50a of the insulating tube 50. The width (radial length) s of the upper surface protrusion 51 is, for example, 0.1 mm or more and 1.0 mm or less. The width s of the upper surface protrusion 51 may be equal to or less than half the width v of the upper surface 50a of the insulating tube 50 (excluding the portion where the upper surface protrusion 51 is formed). The height t* of the upper surface protrusion 51 (the vertical length between the upper surface 50a and the tip surface 51a, not shown) is, for example, 0.05 mm or more and 0.2 mm or less. The tip surface 51a of the upper surface protrusion 51 abuts against the lower surface 23 of the ceramic plate 20. This positions the ceramic plate 20 and the insulating tube 50 so that the distance t between them is approximately equal to the height t* of the upper projections. Therefore, the upper projections 51 correspond to the positioning structure of the present invention. Note that a small amount of adhesive may penetrate between the tip surfaces 51a of the upper projections 51 and the lower surface 23 of the ceramic plate 20, as long as the distance t between the ceramic plate 20 and the insulating tube 50 is approximately equal to the height t* of the upper projections 51 (for example, within a difference of 0.01 mm). The lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50 are bonded by the insulating tube upper surface bonding portion 61 of the adhesive layer 60. The thickness of the insulating tube upper surface bonding portion 61 is the same as the distance t, and therefore is also referred to as the thickness t. Note that the smaller the thickness t, the lower the temperature in the area directly above it tends to be relative to other areas.

[0025] As shown in Figures 3 and 4, an adhesive reservoir 55 is provided on the outer surface 50b of the insulating tube 50, at a position a distance x below the lower surface 23 of the ceramic plate 20. The adhesive reservoir 55 is an annular U-shaped groove that surrounds the outer periphery of the insulating tube 50 and opens to the outer surface 50b of the insulating tube 50. The depth (radial length) u of the adhesive reservoir 55 is, for example, 0.1 mm or more and 0.5 mm or less. The depth u of the adhesive reservoir 55 may be at least twice the distance (radial length) w between the inner circumferential surface 34b (excluding the tapered surface 34c) of the base plate through hole 34 above the adhesive reservoir 55 and the outer surface 50b of the insulating tube 50. The upper end (upper wall surface) 55a of the adhesive reservoir 55 is preferably positioned lower than the ceiling surface 32a of the refrigerant flow path 32. The inner circumferential surface 34b (including the tapered surface 34c) of the base plate through-hole 34 and the outer circumferential surface 50b of the insulating tube 50 are bonded by an insulating tube outer circumferential surface adhesive portion 62 of the adhesive layer 60. The insulating tube outer circumferential surface adhesive portion 62 extends from the lower surface 23 of the ceramic plate 20 to the middle of the adhesive puddle 55 (here, a position a distance h below the lower surface 23 of the ceramic plate 20). The distance (vertical length) between the lower surface 23 of the ceramic plate 20 and the lower end of the insulating tube outer circumferential surface adhesive portion 62 is also referred to as the creep-up amount h of the insulating tube outer circumferential surface adhesive portion 62. Note that the greater the creep-up amount h, the more likely the temperature in the vicinity directly above it is to be lower relative to other portions. The value h-x, which is the length of the portion of the insulating tube outer circumferential surface adhesive portion 62 formed in the adhesive puddle 55, is preferably 0.5 mm or less, for example. The value h-x may be 0 mm.

[0026] The power supply member 70 is, for example, a metal rod. Metals used for the power supply member 70 include, for example, W, Mo, and Ni, and it is preferable for the thermal expansion coefficient of the metal to be close to that of the ceramic plate 20. As shown in FIG. 3 , the power supply member 70 is inserted into the insulating tube through-hole 54 and the ceramic plate blind hole 24 and electrically connected to the electrostatic electrode 22 exposed at the bottom of the ceramic plate blind hole 24 to supply power to the electrostatic electrode 22. The ceramic plate blind hole 24 is a substantially cylindrical hole extending from the underside 23 of the ceramic plate 20 to the electrostatic electrode 22 and has a smaller diameter than the insulating tube through-hole 54. The power supply member 70 is electrically insulated from the base plate 30 by insulating tubes 50 disposed in the base plate through-hole 34 and the bonding layer through-hole 44. Instead of being composed of a single metal rod, the power supply member 70 may be composed of a columnar upper metal terminal and a columnar lower metal terminal connected by a flexible metal wire. The base plate through-hole 34, the bonding layer through-hole 44, and the ceramic plate blind hole 24 correspond to the power supply member insertion hole of the present invention.

[0027] Next, the step of adhering the insulating tube 50 in the manufacturing method of the wafer mounting table 10 will be described with reference to Fig. 5. Fig. 5 is an explanatory diagram of this step. Note that in Figs. 5A to 5D, the wafer mounting surface 21 of the ceramic plate 20 faces downward. Figs. 5A to 5D are also partially enlarged views of the periphery of the base plate through-hole 34.

[0028] First, a bonded assembly is prepared in which the ceramic plate 20 and the base plate 30 are bonded together with the bonding layer 40 ( FIG. 5A ). In this bonded assembly, an electrostatic electrode 22 is embedded in the ceramic plate 20. Furthermore, in this bonded assembly, a power supply member 70 is inserted into the ceramic plate blind hole 24 via the base plate through-hole 34 and the bonding layer through-hole 44, and is electrically connected to the electrostatic electrode 22. Next, an adhesive 60x is applied between the tapered surface 34c of the base plate through-hole 34 and the underside 23 of the ceramic plate 20, and the insulating tube 50 is inserted into the base plate through-hole 34 so that the upper surface 50a of the insulating tube 50 faces the adhesive 60x ( FIG. 5B ). Next, when the insulating tube 50 is pressed toward the ceramic plate 20, the adhesive 60x spreads between the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50, and between the inner circumferential surface 34b of the base plate through-hole 34 and the outer circumferential surface 50b of the insulating tube 50 ( FIG. 5C ). When the insulating tube 50 is further pushed toward the ceramic plate 20 until the tip surfaces 51a of the upper projections 51 of the insulating tube 50 abut against the lower surface 23 of the ceramic plate 20, the adhesive 60x fills the gap between the lower surface 23 of the ceramic plate 20 and the upper surface 50a of the insulating tube 50, and creeps up between the inner circumferential surface 34b of the base plate through-hole 34 and the outer circumferential surface 50b of the insulating tube 50 to form partway into the adhesive pool 55. The amount of adhesive 60x is preset so that it slightly exceeds the upper end 55a of the adhesive pool 55. When the adhesive 60x solidifies in this state, the ceramic plate 20 and the base plate 30 are bonded to the insulating tube 50 via the adhesive layer 60. In this manner, the wafer mounting table 10 is obtained ( FIG. 5D ).

[0029] Next, an example of how the wafer mounting table 10 configured as described above is described. First, with the wafer mounting table 10 installed in a chamber (not shown), a wafer W is placed on the wafer mounting surface 21. The chamber is then depressurized using a vacuum pump to a predetermined vacuum level, and a DC voltage is applied to the electrostatic electrode 22 of the ceramic plate 20 to generate an electrostatic adsorption force, thereby adsorbing and fixing the wafer W to the wafer mounting surface 21. Next, a reactive gas atmosphere at a predetermined pressure (e.g., several tens to several hundreds of Pa) is created in the chamber. In this state, an RF voltage is applied between an upper electrode (not shown) provided on the ceiling of the chamber and the base plate 30 of the wafer mounting table 10 to generate plasma. The surface of the wafer W is processed by the generated plasma. A coolant is circulated through the coolant flow passages 32 of the base plate 30 as needed.

[0030] When processing a wafer W with plasma in this manner, heat input from the plasma is removed by the base plate 30, allowing the wafer mounting surface 21 to be controlled to a desired temperature. However, if the thickness t of the insulating tube upper surface adhesive portion 61 cannot be controlled, the temperature directly above the base plate through-hole 34 will vary from product to product. This issue will be explained using FIG. 6 . FIG. 6A is a graph showing the relationship between the thickness t of the insulating tube upper surface adhesive portion 61 and the temperature difference obtained by subtracting the peripheral temperature from the temperature directly above the power supply member. FIG. 6B is a partially enlarged view of the wafer mounting table 210 used in the analysis. The measurement points for the temperature directly above the power supply member and the peripheral temperature are as shown in FIG. 6B. The cross section shown in FIG. 6B corresponds to the cross section shown in FIG. 3. Note that in FIG. 6B, the same components as those in the wafer mounting table 10 are designated by the same reference numerals. The wafer mounting table 210 is the same as the wafer mounting table 10, except that an insulating tube 250 having no upper surface protrusions on an upper surface 250a and no adhesive reservoirs on an outer peripheral surface 250b is used instead of the insulating tube 50. The wafer mounting table 210 is made of the following materials: alumina (thermal conductivity 30 W / mK) for the ceramic plate 20, Ti (thermal conductivity 17.5 W / mK) for the base plate 30, silicone resin (thermal conductivity 0.2 W / mK) for the bonding layer 40, alumina (thermal conductivity 30 W / mK) for the insulating tube 250, alumina filler-containing silicone resin (thermal conductivity 2.2 W / mK) for the adhesive layer 60, and Mo (thermal conductivity 138 W / mK) and Cu (thermal conductivity 398 W / mK) for the power supply member 70. The space within the base plate through-hole 34 (including the adhesive reservoir 55) was assumed to be filled with air (thermal conductivity: 0.024 W / mK). In this analysis, the creep-up amount h of the insulating tube outer peripheral surface adhesive portion 62 was set to a fixed value of 6.24 mm, and the distance w was set to a fixed value of 0.3 mm. The distance between the lower surface 23 of the ceramic plate 20 and the ceiling surface 32a of the refrigerant flow path 32 was also set to a fixed value of less than 3 mm. As a result of the analysis, as shown in FIG. 6A , the temperature difference changed from approximately −2°C to approximately 0°C simply by increasing the thickness t of the insulating tube upper surface adhesive portion 61 from 0 mm to 0.05 mm. At this time, the temperature remained nearly constant at the outer periphery (see FIG. 6B ), which was cooled by the refrigerant, regardless of the thickness t of the insulating tube upper surface adhesive portion 61. However, the temperature changed depending on the thickness t of the insulating tube upper surface adhesive portion 61 near the base plate through-hole 34, such as directly above the power supply member (see FIG. 6B ).From the above, it was found that the smaller the thickness t, the easier it is for heat to be dissipated in the area directly above it, and the lower the temperature will be relative to other areas (for example, the outer periphery in FIG. 6B ). Therefore, if the thickness t of the insulating tube upper surface adhesive portion 61 cannot be controlled, the temperature in the area directly above the base plate through-hole 34 will vary from product to product. In contrast, with the wafer mounting table 10, the thickness t of the insulating tube upper surface adhesive portion 61 can be made approximately the same as the height of the upper surface protrusion 51, which allows the thickness t of the insulating tube upper surface adhesive portion 61 to be controlled, thereby suppressing such variation.

[0031] Furthermore, if the creep-up amount h of the insulating tube outer peripheral surface adhesive portion 62 cannot be controlled, the temperature in the vicinity directly above the base plate through-hole can vary from product to product. This point will be explained using FIG. 7 . FIG. 7 is a graph showing the relationship between the creep-up amount h of the insulating tube outer peripheral surface adhesive portion 62 and the temperature difference obtained by subtracting the outer peripheral temperature from the temperature directly above the power supply member. The analysis was performed using the wafer mounting table 210 described above. Note that in this analysis, the thickness t of the insulating tube upper surface adhesive portion 61 was set to a fixed value of 0.025 mm, and the distance w was set to a fixed value of 0.3 mm. Furthermore, the distance between the lower surface 23 of the ceramic plate 20 and the ceiling surface 32a of the refrigerant flow path 32 was set to a fixed value of less than 3 mm. As a result of the analysis, as shown in FIG. 7 , when the creep-up amount h of the insulating tube outer peripheral surface adhesive portion 62 increased from 3 mm to 10 mm, the temperature difference changed from approximately 0°C to approximately −1.3°C. At this time, the temperature remained nearly constant at the outer periphery (see FIG. 6B ), which was cooled by the refrigerant, regardless of the creep-up amount h of the insulating tube outer peripheral surface adhesive portion 62. However, the temperature changed depending on the creep-up amount h of the insulating tube outer peripheral surface adhesive portion 62 in the vicinity directly above the base plate through-hole 34, such as directly above the power supply member (see FIG. 6B ). From the above, it was found that the greater the creep-up amount h, the easier it is for heat to be dissipated in the vicinity directly above it, resulting in a lower temperature compared to other areas (e.g., the outer periphery in FIG. 6B ). Therefore, if the creep-up amount h of the insulating tube outer peripheral surface adhesive portion 62 cannot be controlled, the temperature in the vicinity directly above the base plate through-hole 34 may vary from product to product. In contrast, in the wafer mounting table 10, the adhesive fills the adhesive puddle 55 and spreads substantially perpendicular to the vertical direction, suppressing creep-up beyond that point. This allows the amount of creep-up of the insulating tube outer peripheral surface adhesive portion 62 to be controlled, thereby suppressing such variation.

[0032] In the wafer mounting table 10 described above, the upper surface protrusions 51 are provided on the upper surface 50a of the insulating tube 50, which allows the thickness of the insulating tube upper surface adhesive portion 61 to be controlled. This makes it possible to suppress temperature variations between products in the area of ​​the wafer mounting surface 21 directly above the base plate through-hole 34. Furthermore, the adhesive layer 60 includes the insulating tube upper surface adhesive portion 61 and the insulating tube outer peripheral surface adhesive portion 62. Therefore, even when a relatively thin adhesive layer 60 is used, it is possible to firmly bond the lower surface 23 of the ceramic plate 20 to the upper surface 50a of the insulating tube 50, and the inner peripheral surface 34b of the base plate through-hole 34 to the outer peripheral surface 50b of the insulating tube 50.

[0033] Furthermore, the wafer mounting table 10 has the adhesive reservoir 55 on the outer circumferential surface 50b of the insulating tube 50, which makes it possible to control the amount of creeping up of the insulating tube outer circumferential surface adhesive portion 62. This makes it possible to further suppress variations in the temperature of the wafer mounting surface 21 in the vicinity directly above the base plate through-hole 34 from product to product.

[0034] It goes without saying that the present invention is not limited to the first embodiment described above, and can be embodied in various forms as long as they fall within the technical scope of the present invention.

[0035] In the first embodiment described above, the vertical position of the top surface 50a of the insulating tube 50 is constant, but it may be variable. The higher the vertical position of the top surface 50a of the insulating tube 50, the smaller the thickness t of the insulating tube top surface adhesive portion 61. Therefore, the temperature in the area directly above the adhesive portion 61 is likely to be lower relative to other areas. Therefore, by changing the vertical position of the top surface 50a of the insulating tube 50 according to the desired heat dissipation and temperature distribution, the temperature in the area directly above the base plate through hole 34 can be precisely adjusted. Specifically, as shown in FIGS. 8 and 9 , the vertical position of the top surface 50a of the insulating tube 50 may vary stepwise or continuously when viewed along the outer periphery of the insulating tube 50. In FIG. 8 , the top surface 50a of the insulating tube 50 has two steps 50s, one at the front and one at the back of the page, when viewed along the outer periphery of the insulating tube 50. The right side of the page is gradually lower than the left side of the step 50s. In this case, the thickness t of the insulating tube upper surface adhesive portion 61 becomes gradually thicker on the right side of the drawing, with the step corresponding to the step 50s as the boundary, than on the left side of the drawing, when viewed along the outer periphery of the insulating tube 50. In Figure 9, the top surface 50a of the insulating tube 50 is assumed to be inclined (continuously changing) so that the right side is lower than the left side of the drawing, when viewed along the outer periphery of the insulating tube 50. In this case, the thickness t of the insulating tube upper surface adhesive portion 61 becomes thicker on the right side of the drawing than on the left side of the drawing, in accordance with the inclination of the top surface 50a, when viewed along the outer periphery of the insulating tube 50. Note that in Figures 8 and 9, the same components as in the first embodiment are denoted by the same reference numerals.

[0036] In the first embodiment described above, the vertical position of the upper end 55a of the adhesive puddle 55 is constant, but it may be variable. The lower the vertical position of the upper end 55a of the adhesive puddle 55, the greater the amount of creep-up h of the insulating tube outer peripheral surface adhesive portion 62. Therefore, the area directly above the upper end 55a is more likely to lose heat and become lower in temperature relative to other areas. Therefore, by varying the vertical position of the upper end 55a of the adhesive puddle 55 according to the desired heat loss distribution and temperature distribution, the temperature directly above the base plate through hole 34 can be precisely adjusted. Specifically, for example, as shown in FIGS. 10 and 11 , the vertical position of the upper end 55a of the adhesive puddle 55 may vary stepwise or continuously when viewed along the outer periphery of the insulating tube 50. In FIG. 10 , the upper end 55a of the adhesive reservoir 55 has two steps 55s, one at the front and one at the back of the page, when viewed along the outer periphery of the insulating tube 50. The right side of the page, separated by the step 55s, is gradually higher than the left side. In this case, the amount of creeping up of the adhesive portion 62 on the outer periphery of the insulating tube 50 is smaller on the right side of the page separated by the step 55s than on the left side. In FIG. 11 , the upper end 55a of the adhesive reservoir 55 is inclined (continuously changing) so that the right side is higher than the left side when viewed along the outer periphery of the insulating tube 50. In this case, the amount of creeping up of the adhesive portion 62 on the outer periphery of the insulating tube 50 is smaller on the right side of the page than on the left side, depending on the inclination of the upper end 55a. Note that in FIGS. 10 and 11 , the same components as those in the first embodiment are designated by the same reference numerals.

[0037] In the first embodiment described above, one annular upper surface protrusion 51 is provided on the upper surface 50a of the insulating tube 50. However, as shown in Fig. 12, for example, one or more annular upper surface protrusions 52 coaxial with the insulating tube 50 may be provided on the outer periphery of the upper surface protrusion 51. This makes it difficult for the insulating tube 50 to tilt when the insulating tube 50 is pressed against the lower surface 23 of the ceramic plate 20 for bonding, thereby further reducing variations in the thickness of the insulating tube upper surface bonding portion 61 and the insulating tube outer peripheral surface bonding portion 62 between products. Note that in Fig. 12, the same components as in the first embodiment are denoted by the same reference numerals.

[0038] In the first embodiment described above, the upper surface protrusions 51 are annular on the upper surface 50a of the insulating tube 50, but the upper surface protrusions 51 do not have to be annular, and may be, for example, three or more columnar protrusions arranged at equal intervals in the circumferential direction.

[0039] In the first embodiment described above, the adhesive reservoir 55 is provided on the outer peripheral surface 50b of the insulating tube 50, but the adhesive reservoir 55 does not have to be provided. Furthermore, instead of or in addition to the outer peripheral surface 50b of the insulating tube 50, an adhesive reservoir may be provided on the inner peripheral surface 34b of the base plate through hole 34.

[0040] In the first embodiment described above, the adhesive reservoir 55 is a U-shaped groove that opens on the outer surface 50b of the insulating tube 50, but it may also be an L-shaped groove that opens not only on the outer surface 50b of the insulating tube 50 but also on the underside of the insulating tube 50.

[0041] In the first embodiment described above, the power supply member 70 is disposed without a gap in the ceramic plate bottomed hole 24, but the power supply member 70 may be disposed with a gap from the inner peripheral surface of the ceramic plate bottomed hole 24. This also applies to the second embodiment described later.

[0042] In the first embodiment described above, a resin adhesive layer is exemplified as the bonding layer 40, but the present invention is not limited to this. For example, a metal bonding layer may be used as the bonding layer 40. The metal bonding layer can be formed by well-known TCB (thermal compression bonding) using a metal bonding material (for example, an Al-Mg based bonding material or an Al-Si-Mg based bonding material). This also applies to the second embodiment described below.

[0043] In the first embodiment described above, the electrostatic electrode 22 is built into the ceramic plate 20, but this is not particularly limited. For example, a heater electrode (resistive heating element) or a plasma generation electrode (RF electrode) may be built in instead of or in addition to the electrostatic electrode 22. This also applies to the second embodiment described below.

[0044] In the first embodiment described above, the base plate through-holes 34 constitute power supply member insertion holes, but are not limited thereto. For example, the base plate through-holes 34 may constitute lift pin holes or gas holes. The lift pin holes are holes that vertically penetrate the wafer mounting table 10 and are used to insert lift pins that move the wafer W up and down relative to the wafer mounting surface 21. When the wafer W is supported by, for example, three lift pins, three lift pin holes are provided. The gas holes are holes that vertically penetrate the wafer mounting table 10 and are used to supply gas (e.g., He gas) to the wafer mounting surface 21. An example of using the base plate through-holes 34 as part of the gas holes 80 will be described with reference to FIG. 13 . FIG. 13 is a partially enlarged view of another example of the wafer mounting table 10. The gas holes 80 are composed of the base plate through-holes 34, the bonding layer through-holes 44, and the ceramic plate through-holes 84. The ceramic plate through-hole 84 vertically connects the ceramic plate 20 and the electrostatic electrode 22 so as to communicate with the base plate through-hole 34. The electrostatic electrode 22 is not exposed on the inner peripheral surface of the ceramic plate through-hole 84. In FIG. 13 , the same components as those in the first embodiment are denoted by the same reference numerals. Lift pin holes can be provided in the same manner as the gas holes 80. This also applies to the base plate through-hole 134 of the second embodiment described below.

[0045] In the first embodiment described above, the base plate through-hole 34 has a tapered surface 34c, but it may have a straight shape. This also applies to the base plate through-hole 134 of the second embodiment described later.

[0046] In the first embodiment described above, the central zone Z1 and the peripheral zone Z2, which are bounded by the dashed-dotted circle shown in FIG. 1 , may be adjusted so that one of them has a higher temperature at the wafer mounting surface 21 than the other, or so that one of them has a higher heat removal capacity than the other. For example, in one of the central zone Z1 and the peripheral zone Z2 shown in FIG. 1 , the ceiling surface 32 a of the refrigerant flow path 32 may be located higher than the other. The higher the ceiling surface 32 a of the refrigerant flow path 32 and the thinner the thickness t of the insulating tube upper surface adhesive layer 61, the lower the temperature of the wafer mounting surface 21 and the higher the heat removal capacity. In such a case, an insulating tube 50 in which the vertical position of the upper surface 50 a of the insulating tube 50 is changed as shown in FIGS. 8 and 9 , or an insulating tube 50 in which the vertical position of the upper end 55 a of the adhesive puddle 55 is changed as shown in FIGS. 10 and 11 may be used to adjust the temperature distribution of the wafer mounting surface 21 to a desired value, including the area immediately above the base plate through-hole 34. An example in which the height of the ceiling surface 32a of the refrigerant flow path 32 is changed and the height of the upper surface 50a of the insulating tube 50 is changed accordingly will be described with reference to FIG. 13 . In FIG. 13 , the refrigerant flow path 32 has two flow paths 32H and 32L, each with a different height of the ceiling surface 32a. The flow path 32H is located in the outer peripheral zone Z2, i.e., the section from the inlet 32in to the midpoint 32m, while the flow path 32L is located in the central zone Z1, i.e., the section from the midpoint 32m to the outlet 32out ( FIG. 1 ). The height of the ceiling surface 32a around the midpoint 32m of the refrigerant flow path 32 may be inclined from the flow path 32H toward the flow path 32L. The base plate through-hole 34 is provided between adjacent refrigerant flow paths 32. One of the adjacent refrigerant flow paths 32 is the flow path 32H, whose ceiling surface 32a is at a higher position, and the other is the flow path 32L, whose ceiling surface 32a is at a lower position. The height of the upper surface 50a of the insulating tube 50 is lowest in the outer peripheral zone Z2, particularly at a position closest to the flow path 32H, and is highest in the central zone Z1, particularly at a position closest to the flow path 32L. This configuration improves thermal uniformity by canceling out temperature differences due to differences in the height of the ceiling surfaces 32a of the coolant flow paths 32 in the vicinity of the wafer mounting surface 21 directly above the base plate through-holes 34 with temperature differences due to differences in the thickness of the insulating tube upper surface adhesive portions 61. This also applies to the second embodiment described below.In the second embodiment, an insulating tube 150 in which the vertical position of the upper surface 150a of the insulating tube 150 is changed as shown in Figures 17 and 18, or a base plate 130 in which the vertical position of the upper end 135a of the adhesive reservoir 135 is changed as shown in Figures 19 and 20 may be used.

[0047] In the first embodiment described above, the refrigerant flow path 32 is formed in a spiral shape, but there are no particular limitations on the shape of the refrigerant flow path 32. In addition, a plurality of refrigerant flow paths 32 may be provided. This also applies to the second embodiment described below.

[0048] Second Embodiment A wafer mounting table 110 according to a second embodiment will be described with reference to the drawings. Fig. 14 is a partially enlarged view of the wafer mounting table 110 (a partially enlarged view corresponding to Fig. 3), Fig. 15 is a perspective view of an insulating tube 150, and Fig. 16 is an enlarged perspective cross-sectional view of the periphery of a base plate through-hole 134 of a base plate 130 (an enlarged perspective cross-sectional view of the periphery of the base plate through-hole 134 when the base plate 130 is cut along a plane including the central axis of the base plate through-hole 134). In Figs. 14 to 16, the same components of the wafer mounting table 110 as those of the wafer mounting table 10 are designated by the same reference numerals, and their description will be omitted.

[0049] The wafer mounting table 110 is an example of a semiconductor manufacturing equipment component of the present invention, and includes a ceramic plate 20, a base plate 130, a bonding layer 40, a base plate through-hole 134, an insulating tube 150, and a power supply member 70.

[0050] The base plate 130 is the same as the base plate 30 except that the shape of the base plate through-hole 134 is different from that of the base plate through-hole 34 .

[0051] The base plate through-hole 134 is a generally cylindrical hole that passes through the base plate 130 in the up-down direction, and is provided so as not to pass through the coolant flow path 32. The base plate through-hole 134 communicates with the bonding layer through-hole 44.

[0052] The insulating tube 150 is housed in the base plate through-hole 134 and the bonding layer through-hole 44. The insulating tube 150 is a substantially cylindrical member made of an electrically insulating material (for example, the same material as the ceramic plate 20), and has an insulating tube through-hole 154 that passes through the insulating tube 150 in the vertical direction along the central axis of the insulating tube 150.

[0053] The insulating tube 150 is bonded to the lower surface 23 of the ceramic plate 20 and the inner peripheral surface 134b of the base plate through-hole 134 via an adhesive layer 60. The upper end of the base plate through-hole 134 has a tapered surface 134c with a C-chamfered shape. A countersunk hole 131 is provided at the lower end of the base plate through-hole 134, as shown in FIGS. 14 and 16 .

[0054] An outer peripheral protrusion 151 is provided on the outer peripheral surface 150b of the insulating tube 150. The outer peripheral protrusion 151 is an annular protrusion that circles the outer periphery of the insulating tube 150. The outer diameter of the outer peripheral protrusion 151 is larger than the opening of the bottom surface 131a of the countersunk hole 131 and smaller than the inner peripheral surface 131b of the countersunk hole 131. The bottom surface 131a of the countersunk hole 131 abuts against the upper surface 151a of the outer peripheral protrusion 151, serving as a restricting portion that restricts upward movement of the outer peripheral protrusion 151. The outer peripheral protrusion 151 and the countersunk hole 131 are positioned such that when the upper surface 151a of the outer peripheral protrusion 151 abuts against the bottom surface 131a of the countersunk hole 131, the vertical distance t between the lower surface 23 of the ceramic plate 20 and the upper surface 150a of the insulating tube 150 becomes a predetermined value. This positions the lower surface 23 of the ceramic plate 20 and the upper surface 150a of the insulating tube 150 so that the vertical distance t between them is a predetermined value. Therefore, the outer peripheral protrusion 151 on the outer peripheral surface 150b of the insulating tube 150 and the bottom surface 131a of the countersunk hole 131 at the lower end of the base plate through-hole 134 correspond to the positioning structure of the present invention. The distance t is, for example, 0.05 mm or more and 0.2 mm or less. The lower surface 23 of the ceramic plate 20 and the upper surface 150a of the insulating tube 150 are bonded to each other by the insulating tube upper surface bonding portion 61 of the adhesive layer 60. The thickness of the insulating tube upper surface bonding portion 61 is the same as the distance t described above, and therefore the thickness of the insulating tube upper surface bonding portion 61 is also referred to as the thickness t. Note that the smaller the thickness t, the lower the temperature of the area directly above it tends to be relative to other areas.

[0055] An adhesive reservoir 135 is provided on the inner circumferential surface 134b of the base plate through hole 134, at a position a distance x below the lower surface 23 of the ceramic plate 20. The adhesive reservoir 135 is an annular L-shaped groove that surrounds the inner periphery of the base plate through hole 134 and opens to the inner circumferential surface 134b of the base plate through hole 134 and the bottom surface 131a of the countersunk hole 131. The depth (radial length) u' of the adhesive reservoir 135 is, for example, 0.1 mm or more and 0.5 mm or less. The depth u' of the adhesive reservoir 135 may be at least twice the distance (radial length) w between the inner circumferential surface 134b of the base plate through hole 134 and the outer circumferential surface 150b of the insulating tube 150. The upper end (upper wall surface) 135a of the adhesive reservoir 135 is preferably positioned lower than the ceiling surface 32a of the refrigerant flow path 32. The inner circumferential surface 134b of the base plate through-hole 134 and the outer circumferential surface 150b of the insulating tube 150 are bonded by an insulating tube outer circumferential surface adhesive portion 62 of the adhesive layer 60. The insulating tube outer circumferential surface adhesive portion 62 is formed from the lower surface 23 of the ceramic plate 20 to partway through the adhesive puddle 135. The distance (vertical length) between the lower surface 23 of the ceramic plate 20 and the lower end of the insulating tube outer circumferential surface adhesive portion 62 is also referred to as the creep-up amount h of the insulating tube outer circumferential surface adhesive portion 62. The larger this creep-up amount h, the more likely the temperature in the area directly above it is to be lower relative to other areas. The value h-x, which is the length of the portion of the insulating tube outer circumferential surface adhesive portion 62 formed in the adhesive puddle 135, is preferably 0.5 mm or less, for example. The value h-x may also be 0 mm.

[0056] 14 , the power supply member 70 is inserted into the insulating tube through hole 154 and the ceramic plate blind hole 24, and is electrically connected to the electrostatic electrode 22 exposed at the bottom of the ceramic plate blind hole 24 to supply power to the electrostatic electrode 22. The ceramic plate blind hole 24 has a smaller diameter than the insulating tube through hole 154. The power supply member 70 is electrically insulated from the base plate 130 by insulating tubes 150 arranged in the base plate through hole 134 and the bonding layer through hole 44. The base plate through hole 134, the bonding layer through hole 44, and the ceramic plate blind hole 24 correspond to the power supply member insertion holes of the present invention.

[0057] The manufacturing method of the wafer mounting table 110 can be similar to the manufacturing method of the wafer mounting table 10. In this case, in the description of Figures 5A to 5C, the base plate 30 can be read as the base plate 130, the base plate through-hole 34 as the base plate through-hole 134, the insulating tube 50 as the insulating tube 150, the upper surface 50a as the upper surface 150a, and the outer peripheral surface 50b as the outer peripheral surface 150b. In the description of Figure 5D, instead of pushing the insulating tube 50 toward the ceramic plate 20 until the tip surface 51a of the upper surface protrusion 51 of the insulating tube 50 abuts against the lower surface 23 of the ceramic plate 20, the insulating tube 150 is pushed toward the ceramic plate 20 until the upper surface 151a of the outer peripheral protrusion 151 of the insulating tube 150 abuts against the bottom surface 131a of the countersunk hole 131 in the base plate 130. As a result, the adhesive 60x fills the gap between the lower surface 23 of the ceramic plate 20 and the upper surface 150a of the insulating tube 150, and also creeps up between the inner circumferential surface 134b of the base plate through-hole 134 and the outer circumferential surface 150b of the insulating tube 150 to form partway into the adhesive reservoir 135. When the adhesive 60x solidifies in this state, the ceramic plate 20 and the base plate 130 are bonded to the insulating tube 150 via the adhesive layer 60. In this manner, the wafer mounting table 110 is obtained.

[0058] The use of the wafer stage 110 is similar to the use of the wafer stage 10, and therefore a description thereof will be omitted here.

[0059] In the wafer mounting table 110 described above, the outer peripheral surface 150b of the insulating tube 150 is provided with an outer peripheral protrusion 151. The upper surface 151a of this outer peripheral protrusion 151 abuts against the bottom surface 131a of the countersunk hole 131 formed at the lower end of the base plate through hole 134, restricting the outer peripheral protrusion 151 from moving upward. This allows the thickness of the insulating tube upper surface adhesive portion 61 to be controlled. This reduces temperature variations between products in the area of ​​the wafer mounting surface 21 directly above the base plate through hole 134. Furthermore, the adhesive layer 60 includes the insulating tube upper surface adhesive portion 61 and the insulating tube outer peripheral surface adhesive portion 62. Therefore, even when a relatively thin adhesive layer 60 is used, it is possible to firmly bond the lower surface 23 of the ceramic plate 20 to the upper surface 150a of the insulating tube 150 and the inner peripheral surface 134b of the base plate through hole 134 to the outer peripheral surface 150b of the insulating tube 150.

[0060] Furthermore, the wafer mounting table 110 has an adhesive reservoir 135 on the inner circumferential surface 134b of the base plate through-hole 134, which makes it possible to control the amount of creeping up of the adhesive layer 60. This makes it possible to further suppress variations in the temperature of the wafer mounting surface 21 immediately above the base plate through-hole 134 from product to product.

[0061] It goes without saying that the present invention is not limited to the second embodiment described above, and can be embodied in various forms as long as they fall within the technical scope of the present invention.

[0062] In the second embodiment described above, the vertical position of the top surface 150a of the insulating tube 150 is constant, but it may be variable. The higher the vertical position of the top surface 150a of the insulating tube 150, the smaller the thickness t of the insulating tube top surface adhesive portion 61. Therefore, the area directly above the adhesive portion 61 is more likely to lose heat and have a lower temperature than other areas. Therefore, by varying the vertical position of the top surface 150a of the insulating tube 150 according to the desired heat loss distribution and temperature distribution, the temperature in the area directly above the base plate through hole 134 can be precisely adjusted. Specifically, for example, as shown in FIGS. 17 and 18 , the vertical position of the top surface 150a of the insulating tube 150 may vary stepwise or continuously when viewed along the outer periphery of the insulating tube 150. In FIG. 17 , the top surface 150a of the insulating tube 150 has two steps 150s, one at the front and one at the back of the page, when viewed along the outer periphery of the insulating tube 150. The right side of the page is gradually lower than the left side of the page, with step 150s as the boundary. In this case, the thickness t of the insulating tube top surface adhesive portion 61 is gradually thicker on the right side of the page than on the left side, with step 150s as the boundary, when viewed along the outer periphery of the insulating tube 150. In FIG. 18 , the top surface 150a of the insulating tube 150 is sloped (continuously changing) so that the right side is lower than the left side of the page, when viewed along the outer periphery of the insulating tube 150. In this case, the thickness t of the insulating tube top surface adhesive portion 61 is thicker on the right side of the page than on the left side, corresponding to the slope of the top surface 150a, when viewed along the outer periphery of the insulating tube 150. In FIGS. 17 and 18 , the same components as those in the first and second embodiments are denoted by the same reference numerals.

[0063] In the second embodiment described above, the vertical position of the upper end 135a of the adhesive puddle 135 is constant, but it may be variable. The lower the vertical position of the upper end 135a of the adhesive puddle 135, the greater the amount of creep-up h of the insulating tube outer peripheral surface adhesive portion 62. Therefore, the area directly above the upper end 135a is more likely to lose heat and become lower in temperature relative to other areas. Therefore, by varying the vertical position of the upper end 135a of the adhesive puddle 135 according to the desired heat loss distribution and temperature distribution, the temperature directly above the base plate through hole 34 can be precisely adjusted. Specifically, for example, as shown in FIGS. 19 and 20 , the vertical position of the upper end 135a of the adhesive puddle 135 may vary stepwise or continuously when viewed along the outer periphery of the insulating tube 150. In Figure 19, the upper end 135a of the adhesive reservoir 135 has two steps 135s, one at the front and one at the back of the page, when viewed along the outer periphery of the insulating tube 150 (the step 135s at the front is not shown), and the right side of the page is gradually higher than the left side of the page, with step 135s as the boundary. In this case, the amount of creeping up of the insulating tube outer peripheral surface adhesive portion 62 is smaller on the right side of the page, with step 135s as the boundary, than on the left side, when viewed along the outer periphery of the insulating tube 150. In Figure 20, the upper end 135a of the adhesive reservoir 135 is inclined (continuously changing) so that the right side is higher than the left side when viewed along the outer periphery of the insulating tube 150. In this case, the amount of creeping up of the insulating tube outer peripheral surface adhesive portion 62 is smaller on the right side of the page than on the left side, when viewed along the outer periphery of the insulating tube 150, depending on the inclination of the upper end 135a. 19 and 20, the same components as those in the first and second embodiments are denoted by the same reference numerals.

[0064] In the second embodiment described above, the outer peripheral surface 150b of the insulating tube 150 is provided with an annular outer peripheral protrusion 151, but the outer peripheral protrusion 151 does not have to be annular, and may be, for example, three or more columnar protrusions arranged at equal intervals in the circumferential direction.

[0065] In the second embodiment described above, the adhesive reservoir 135 is provided on the inner peripheral surface 134b of the base plate through hole 134, but the adhesive reservoir 135 does not have to be provided. Also, instead of or in addition to the inner peripheral surface 134b of the base plate through hole 134, an adhesive reservoir may be provided on the outer peripheral surface 150b of the insulating tube 150.

[0066] In the second embodiment described above, the adhesive reservoir 135 is an L-shaped groove that opens to the inner surface 134b of the base plate through hole 134 and the bottom surface 131a of the countersunk hole 131, but it may also be a U-shaped groove that opens to the inner surface 134b of the base plate through hole 134.

[0067] In the second embodiment described above, a countersunk hole 131 is provided at the lower end of the base plate through hole 134, and the bottom surface 131a of the countersunk hole 131 serves as a regulating part, but the countersunk hole 131 may be omitted and the part of the underside of the base plate 130 surrounding the base plate through hole 134 may serve as a regulating part.

[0068] The semiconductor manufacturing equipment member of the present invention can be used, for example, in the field of processing wafers with plasma or the like.

[0069] 10 wafer mounting table, 20 ceramic plate, 21 wafer mounting surface, 22 electrostatic electrode, 23 lower surface, 24 ceramic plate bottomed hole, 30 base plate, 32 coolant flow path, 32a ceiling surface, 32H, 32L flow path, 32in inlet, 32out outlet, 32m midway position, 34 base plate through hole, 34b inner peripheral surface, 34c tapered surface, 40 bonding layer, 44 bonding layer through hole, 50 insulating tube, 50a upper surface, 50b outer peripheral surface, 50s step, 51 upper surface protrusion, 51a tip surface, 52 upper surface protrusion, 54 insulating tube through hole, 55 adhesive reservoir, 55a upper end, 55s step, 60 adhesive layer, 60x adhesive, 61 insulating tube upper surface adhesive portion, 62 insulating tube outer peripheral surface adhesive portion, 70 Power supply member, 80 gas hole, 84 ceramic plate through-hole, 110 wafer mounting table, 130 base plate, 131 countersunk hole, 131a hole bottom surface, 131b inner peripheral surface, 134 base plate through-hole, 134b inner peripheral surface, 134c tapered surface, 135 adhesive reservoir, 135a upper end, 135s step, 150 insulating tube, 150a upper surface, 150b outer peripheral surface, 150s step, 151 outer peripheral protrusion, 151a upper surface, 154 insulating tube through-hole, 210 wafer mounting table, 250 insulating tube, 250a upper surface, 250b outer peripheral surface, Z1 central zone, Z2 outer peripheral zone.

Claims

1. A member for semiconductor manufacturing equipment comprising: a ceramic plate having a wafer mounting surface on an upper surface and incorporating an electrode; a base plate provided on the lower surface side of the ceramic plate; a base plate through hole passing through the base plate in the vertical direction; an insulating tube inserted into the base plate through hole; an adhesive layer having an insulating tube upper surface adhesive portion bonding the lower surface of the ceramic plate to the upper surface of the insulating tube and having an insulating tube outer peripheral surface adhesive portion continuous with the insulating tube upper surface adhesive portion bonding the inner peripheral surface of the base plate through hole to the outer peripheral surface of the insulating tube; and a positioning structure which positions the lower surface of the ceramic plate and the upper surface of the insulating tube so that the distance between them is a predetermined distance.

2. The semiconductor manufacturing equipment member according to claim 1, wherein the positioning structure has an upper surface protrusion provided on the upper surface of the insulating tube.

3. A semiconductor manufacturing equipment component as described in claim 1, wherein the positioning structure has an outer peripheral protrusion provided on the outer peripheral surface of the insulating tube, and a restricting portion provided on the base plate and contacting an upper surface of the outer peripheral protrusion to restrict upward movement of the outer peripheral protrusion.

4. A semiconductor manufacturing equipment member according to any one of claims 1 to 3, wherein the vertical position of the upper surface of the insulating tube changes stepwise or continuously when viewed along the outer periphery of the insulating tube.

5. A semiconductor manufacturing equipment component as claimed in any one of claims 1 to 3, wherein at least one of the inner circumferential surface of the base plate through hole and the outer circumferential surface of the insulating tube has an adhesive pool located below and away from the underside of the ceramic plate, and the insulating tube outer circumferential surface adhesive portion is formed from the underside of the ceramic plate to partway down the adhesive pool.

6. A semiconductor manufacturing equipment component according to any one of claims 1 to 3, wherein the base plate through hole constitutes a power supply member insertion hole that is provided in the semiconductor manufacturing equipment component downward from the electrode and through which a power supply member that supplies power to the electrode is inserted, a lift pin hole that passes through the semiconductor manufacturing equipment component in the vertical direction and through which a lift pin is inserted, or a gas hole that passes through the semiconductor manufacturing equipment component in the vertical direction and through which gas is supplied to the wafer mounting surface.

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