Plasma source assembly and substrate processing device

Abstract

A plasma source assembly according to one aspect of the present invention comprises: a gas discharge plate having a plurality of gas discharge holes; and at least one plasma source coupled to the gas discharge plate, wherein the at least one plasma source includes: a plurality of body parts, each having gas diffusion spaces formed therein; and a plurality of insulating parts coupled such that the gas diffusion spaces between the plurality of body parts are connected to each other, and includes: a reaction body having an opening formed in at least one part thereof; a plurality of magnetic cores that surround each of the plurality of body parts; and a plurality of windings which are arranged to wind the plurality of magnetic cores, and which receive power from a power supply unit so as to induce magnetic force within the plurality of magnetic cores, and cooling parts for the flow of a cooling medium can be formed in at least a portion of each of the body parts.

Description

Plasma source assembly and substrate processing device

[0001] The present invention relates to semiconductor manufacturing technology, and more specifically, to a plasma source assembly and a substrate processing device using the same.

[0002] In a substrate processing device for forming a semiconductor device, a device and process are being studied that perform substrate processing by supplying activated reactants, such as radicals, into the process chamber using a plasma source outside the process chamber, such as a remote plasma generator, without directly forming plasma within the process chamber. By utilizing a remote plasma generator in this manner, desired reactants can be generated and supplied into the process chamber, and since plasma is not directly formed within the process chamber, plasma damage to the substrate can be prevented.

[0003] To reduce the path by which radicals generated from a remote plasma generator are supplied to the substrate, an assembly structure that couples the plasma source to the gas injection unit of the process chamber is being studied. This structure increases the activity ratio of radicals supplied to the substrate from the plasma source assembly structure, thereby enhancing process efficiency during substrate processing. Furthermore, a cooling structure for enhancing the plasma efficiency of this type of plasma source assembly is being studied.

[0004] The present invention is intended to solve the above-mentioned problems, and a technical problem according to the present invention is to provide a plasma source assembly and a substrate processing device using the same that can reduce plasma damage on a substrate and increase process efficiency during substrate processing.

[0005] However, these tasks are exemplary and the scope of the present invention is not limited thereby.

[0006] According to an aspect of the present invention for solving the technical problem of the present invention, a plasma source assembly comprises: a gas discharge plate having a plurality of gas discharge holes formed therein; and at least one plasma source coupled on the gas discharge plate to supply an activated process gas to the gas discharge plate, wherein the at least one plasma source comprises: a plurality of body parts each having gas diffusion spaces formed therein; and a plurality of insulating parts coupled between the plurality of body parts so that the gas diffusion spaces are in communication with each other; a reaction body having an opening formed in at least a portion of each of the plurality of body parts, the gas diffusion spaces within the plurality of body parts forming a toroidal channel as a whole; a plurality of magnetic cores each surrounding the plurality of body parts and spaced apart from each other along the toroidal channel; and a plurality of windings arranged to wind the plurality of magnetic cores, the windings receiving power from a power source and inducing a magnetic force within the plurality of magnetic cores, and cooling parts for flowing a cooling medium may be formed within at least a portion of each of the plurality of body parts.

[0007] According to some embodiments of the present invention, the plurality of body parts may each include first body parts having a first length and second body parts having a second length, wherein the first length is greater than the second length, and the plurality of magnetic cores may be arranged to surround the second body parts.

[0008] According to some embodiments of the present invention, the cooling sections are formed on at least one surface of each of the first body sections, and refrigerant inlets connected to one end of the cooling sections and refrigerant outlets connected to the other end of the cooling sections may be formed on each of the at least one surfaces of the first body sections.

[0009] According to some embodiments of the present invention, flanges are formed at both ends of the second body parts, one side of the first body parts is respectively coupled to the flanges on one side of the second body parts, and the plurality of insulating parts can be respectively coupled between the flanges on the other side of the second body parts and the other sides of the first body parts.

[0010] According to some embodiments of the present invention, one side of the second body parts is joined to the other side of the first body parts, respectively, and the plurality of insulating parts may include a toroidal channel forming part that is sealed to the other side of the second body parts and one side of the adjacent first body parts, and forms the toroidal channel on the inside.

[0011] According to some embodiments of the present invention, the first body parts include an upper wall formed on an upper surface of the gas diffusion spaces, side walls formed on both sides in the width direction of the gas diffusion spaces, and a lower wall formed on a lower surface of the gas diffusion spaces, and the cooling parts may be formed on at least one surface of the upper wall and the side walls, and the opening may be formed in the lower wall.

[0012] According to some embodiments of the present invention, a cover plate may be coupled to at least one of the upper wall and the side wall of the plurality of body parts to cover the groove shape of the cooling parts.

[0013] According to some embodiments of the present invention, the cooling units may include a flow path groove patterned in a predetermined shape and a cover member covering the flow path groove to form a refrigerant path through which the cooling medium flows, wherein a refrigerant inlet for supplying the cooling medium to the refrigerant path may be formed on one side of the cover member, and a refrigerant outlet for discharging the cooling medium passing through the refrigerant path may be formed on the other side of the cover member.

[0014] According to some embodiments of the present invention, the at least one plasma source may have an insulating member coupled between the gas discharge plate and the at least one plasma source.

[0015] According to some embodiments of the present invention, the gas discharge plate may be formed of an insulating material.

[0016] According to some embodiments of the present invention, the at least one plasma source includes: a first plasma source coupled to the gas discharge plate; and a second plasma source coupled to the gas discharge plate, the second plasma source being spaced apart from the first plasma source and disposed outside the first plasma source; wherein the gas discharge plate includes: a first gas discharge portion to which the first plasma source is coupled; and a second gas discharge portion to which the second plasma source is coupled; wherein a process gas activated in the first plasma source can be supplied to the first gas discharge portion through a first opening, which is an opening of the first plasma source, and a process gas activated in the second plasma source can be supplied to the second gas discharge portion through a second opening, which is an opening of the second plasma source.

[0017] According to some embodiments of the present invention, the gas discharge plate may be formed integrally with the first gas discharge portion and the second gas discharge portion on the same plane.

[0018] According to some embodiments of the present invention, the gas discharge plate may be a stepped plate member having different heights, such that the first gas discharge portion and the second gas discharge portion are arranged at different heights.

[0019] According to some embodiments of the present invention, the first gas discharge portion may be disposed at a higher position than the second gas discharge portion, such that the first opening is disposed at a higher position than the second opening.

[0020] According to some embodiments of the present invention, the first gas discharge portion and the second gas discharge portion may be arranged in a right-angled structure, and the first gas discharge portion may be arranged on a plane so that the first opening faces downward, and the second gas discharge portion may be arranged on a vertical plane so that the second opening faces sideways.

[0021] According to some embodiments of the present invention, the gas discharge plate is a stepped plate member including a horizontal wall and a vertical wall extending vertically downward around an edge of the horizontal wall so as to have different heights, and the first gas discharge portion may be formed on the horizontal wall, and the second gas discharge portion may be formed on the vertical wall.

[0022] According to an aspect of the present invention for solving the technical problem of the present invention, a substrate processing device may include: a process chamber having a reaction space formed therein; a chamber lid coupled to an upper portion of the process chamber; a substrate support member coupled to a lower portion of the process chamber to support a substrate within the reaction space; at least one plasma source assembly coupled to the chamber lid and according to any one of claims 1 to 11; and a gas injection member facing the substrate support member and disposed below the at least one plasma source assembly, the gas injection member having a gas injection plate formed thereon for injecting a process gas activated by the plasma source assembly onto the substrate support member.

[0023] According to the plasma source assembly and substrate processing device according to some embodiments of the present invention, which are made as described above, a cooling line can be formed within the plasma source assembly to reduce plasma damage and increase process stability and process efficiency during substrate processing. Of course, the scope of the present invention is not limited by these effects.

[0024] FIG. 1 is a schematic diagram showing a plasma source according to one embodiment of the present invention.

[0025] Figure 2 is a schematic perspective view showing the plasma source of Figure 1.

[0026] Figure 3 is a schematic diagram showing power transmission in the plasma source of Figure 1.

[0027] Figures 4 and 5 are schematic perspective views showing some configurations of a reaction body in the plasma source of Figure 1.

[0028] Fig. 6 is a cross-sectional view showing the cut surface of D-D' of Fig. 5.

[0029] FIGS. 7 to 11 are schematic perspective views showing cutaway portions of plasma source assemblies according to embodiments of the present invention.

[0030] FIG. 12 is a schematic cross-sectional view showing a substrate processing device according to one embodiment of the present invention.

[0031] FIG. 13 is a schematic cross-sectional view showing a substrate processing device according to another embodiment of the present invention.

[0032] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0033] The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. The following embodiments may be modified in various ways, and the scope of the present invention is not limited to the embodiments described below. Rather, these embodiments are provided to more faithfully and completely explain the present disclosure and to fully convey the spirit of the present invention to those skilled in the art.

[0034] Additionally, the thickness and size of each layer in the drawings are exaggerated for convenience and clarity of explanation. Furthermore, the embodiments of the present invention should not be construed as limited to the specific shapes of the regions illustrated in this specification, and should include, for example, changes in shape resulting from manufacturing processes.

[0035] FIG. 1 is a schematic diagram showing a plasma source (200) according to one embodiment of the present invention, FIG. 2 is a schematic perspective view showing the plasma source (200) of FIG. 1, and FIG. 3 is a schematic diagram showing power transmission in the plasma source (200) of FIG. 1.

[0036] Referring to FIGS. 1 to 3, the plasma source (200) may include a reaction body (210), a plurality of magnetic cores (220a, 220b, 220c), and a plurality of windings (224a, 224b, 224c).

[0037] The reaction body (210) may include a plurality of body parts (212a, 212b, 212c) and a plurality of insulating parts (216a, 216b, 216c). The plurality of body parts (212a, 212b, 212c) may have gas diffusion spaces (214a, 214b, 214c) formed therein, respectively. More specifically, the body part (212a) may have a gas diffusion space (214a) formed therein, the body part (212b) may have a gas diffusion space (214b) formed therein, and the body part (212c) may have a gas diffusion space (214c) formed therein. The cross-sectional shapes of the gas diffusion spaces (214a, 214b, 214c) may have various shapes, such as a circle, an ellipse, and a polygon.

[0038] In some embodiments, the plurality of body parts (212a, 212b, 212c) may be formed by coating an insulating material on a conductive material. For example, the plurality of body parts (212a, 212b, 212c) may be formed by coating an insulating material, such as a metal oxide or metal nitride, on a metal.

[0039] A plurality of insulating portions (216a, 216b, 216c) may be coupled between a plurality of body portions (212a, 212b, 212c). The plurality of insulating portions (216a, 216b, 216c) may be interposed between the body portions (212a, 212b, 212c) so that the body portions (212a, 212b, 212c) are not directly electrically connected to each other but are spaced apart from each other.

[0040] For example, a plurality of insulating portions (216a, 216b, 216c) may have a flow path formed therein so that gas diffusion spaces (214a, 214b, 214c) within the body portions (212a, 212b, 212c) are in communication with each other. The plurality of insulating portions (216a, 216b, 216c) may be formed of a suitable insulating material, such as an oxide, a nitride, a polymer resin, or the like.

[0041] More specifically, the plurality of insulating parts may be sealed to the other side of the second body parts (2122a, 2122b, 2122c) to be described later and one side of the adjacent first body parts (2121a, 2121b, 2121c), and may include a toroidal channel forming part forming a toroidal channel (214) on the inside.

[0042] In some embodiments, in the reaction body (210), the gas diffusion spaces (214a, 214b, 214c) may form a toroidal channel (214) as a whole. More specifically, the plurality of body parts (212a, 212b, 212c) may be formed to correspond to structures that are formed by carving out the overall shape of the toroidal channel (214) so ​​as to define the toroidal channel (214) as a whole. For example, when the toroidal channel (214) is formed as a donut shape as a whole, the plurality of body parts (212a, 212b, 212c) may be formed to correspond to structures that are formed by dividing the donut shape into a plurality of pieces.

[0043] In some embodiments, the reaction body (210) may be formed with a gas inlet (2123) for introducing gas into the toroidal channel (214) and an opening (2124) for discharging gas.

[0044] A plurality of magnetic cores (220a, 220b, 220c) may be spaced apart from each other along the toroidal channel (214) while surrounding the plurality of body parts (212a, 212b, 212c), respectively. For example, the plurality of magnetic cores (220a, 220b, 220c) may be respectively disposed on the plurality of body parts (212a, 212b, 212c). More specifically, the magnetic core (220a) may be disposed to surround the outer circumference of the body part (212a), the magnetic core (220b) may be disposed to surround the outer circumference of the body part (212b), and the magnetic core (220c) may be disposed to surround the outer circumference of the body part (212c). For example, the plurality of magnetic cores (220a, 220b, 220c) may include a magnetic material, such as a ferrite material.

[0045] In some embodiments, each of the plurality of magnetic cores (220a, 220b, 220c) may be formed as a single closed structure or may have a structure in which a plurality of segments are combined.

[0046] A plurality of windings (224a, 224b, 224c) may be arranged to wind a plurality of magnetic cores (220a, 220b, 220c). For example, a winding (224a) may be arranged to wind a magnetic core (220a), a winding (224b) may be arranged to wind a magnetic core (220b), and a winding (224c) may be arranged to wind a magnetic core (220c).

[0047] The plurality of windings (224a, 224b, 224c) can receive power from the power supply (230) and induce a magnetic force within the plurality of magnetic cores (220a, 220b, 220c). For example, when the plurality of windings (224a, 224b, 224c) are wound in the width direction of the plurality of magnetic cores (220a, 220b, 220c), when power is applied to the plurality of windings (224a, 224b, 224c), a magnetic force can be induced within the plurality of magnetic cores (220a, 220b, 220c) along the circumferential direction thereof.

[0048] The power supply unit (230) may include a power supply device and may supply RF power to a plurality of windings (224a, 224b, 224c) through a resonant circuit unit (not shown). For example, the power supply unit (230) may include a switching mode power supply (SMPS).

[0049] In the plasma source (200), the number of the plurality of body parts (212a, 212b, 212c) is exemplarily shown and may be selected as two or more. Furthermore, depending on the number of the plurality of body parts (212a, 212b, 212c), the number of the plurality of magnetic cores (220a, 220b, 220c), the plurality of windings (224a, 224b, 224c), and the number of insulating parts (216) may vary.

[0050] In some embodiments, the plurality of body portions (212a, 212b, 212c) may each include first body portions (2121a, 2121b, 2121c) and second body portions (2122a, 2122b, 2122c). For example, the body portion (212a) may include a first body portion (2121a) and a second body portion (2122a) coupled to each other, the body portion (212b) may include a first body portion (2121b) and a second body portion (2122b) coupled to each other, and the body portion (212c) may include a first body portion (2121c) and a second body portion (2122c) coupled to each other. That is, one side of the second body parts (2122a, 2122b, 2122c) can be joined to the other side of the first body parts (2121a, 2121b, 2121c).

[0051] For example, the first body parts (2121a, 2121b, 2121c) may have a first length, and the second body parts (2122a, 2122b, 2122c) may have a second length. The first length may be greater than the second length. For example, the first length may be at least three times greater than the second length.

[0052] Flanges (2126, 2127) may be formed on both ends of the second body parts (2122a, 2122b, 2122c). For example, one side of the first body parts (2121a, 2121b, 2121c) may be formed on the flanges (2127) on one side of the second body parts (2122a, 2122b, 2122c), and a plurality of insulating parts (216a, 216b, 216c) may be coupled between the flanges (2126) on the other side of the second body parts (2122a, 2122b, 2122c) and the other sides of the first body parts (2121a, 2121b, 2121c). A plurality of magnetic cores (220a, 220b, 220c) can be arranged to surround the second body parts (2122a, 2122b, 2122c).

[0053] In some embodiments, at least one gas inlet (2123) may be formed in the upper wall (A1) of the first body parts (2121a, 2121b, 2121c), and at least one opening (2124) may be formed in the lower wall (A2) of the first body parts (2121a, 2121b, 2121c). For example, the upper wall (A1) refers to a wall body including an upper surface of the gas diffusion spaces (214), the lower wall (A2) refers to a wall body including a bottom surface, and side walls may be connected to the upper wall (A1) and the lower wall (A2). Gas introduced into the toroidal channel (214) through the gas inlet (2123) may be activated by plasma and discharged to the lower portion of the plasma source (200) through the opening (2124). For example, the opening (2124) may be formed as a slit-shaped opening.

[0054] In some embodiments, the gas inlet (2123) may be formed in the side wall of the first body parts (2121a, 2121b, 2121c).

[0055] In some embodiments, cooling sections (2125) for the flow of a cooling medium may be formed within at least a portion of each of the plurality of body sections (212a, 212b, 212c). The cooling medium may be circulated through the cooling sections (2125), thereby cooling the reaction body (210). For example, the cooling sections (2125) may be formed as cooling channels on one surface of the plurality of body sections (212a, 212b, 212c). The cooling medium may include cooling water.

[0056] As illustrated in FIGS. 4 and 5, cooling sections (2125) are formed on at least one surface of each of the first body sections (2121a, 2121b, 2121c), and refrigerant inlets (H1) connected to one end of the cooling sections (2125) and refrigerant outlets (H2) connected to the other end of the cooling sections (2125) may be formed on at least one surface of each of the first body sections (2121a, 2121b, 2121c).

[0057] In some embodiments, the cooling sections (2125) may be formed in a groove shape on at least one of the upper wall (A1) and the side wall of the first body sections (2121a, 2121b, 2121c).

[0058] Specifically, the cooling sections (2125) may be formed as grooves patterned into a predetermined shape. For example, the cooling sections (2125) may be formed by carving grooves in the shape of a groove in the upper wall (A1) of the first body sections (2121a, 2121b, 2121c) through a machining process.

[0059] Furthermore, a cover member may be coupled to at least one of the upper wall (A1) and the side wall of the first body parts (2121a, 2121b, 2121c) to cover the groove shape of the cooling parts (2125).

[0060] The above cover member may include a cover plate (2128) that covers the flow path groove to form a refrigerant path through which the cooling medium flows. A refrigerant inlet (H1) for supplying the cooling medium to the refrigerant path may be formed on one side of the cover member, and a refrigerant outlet (H2) through which the cooling medium passing through the refrigerant path is discharged may be formed on the other side of the cover member. Accordingly, most of the cooling parts (2125) are sealed, and a refrigerant supply line (not shown) may be connected to the refrigerant inlet (H1) and the refrigerant outlet (H2).

[0061] Alternatively, cooling units having separate cooling lines may be combined to form cooling units (2125).

[0062] As shown in FIGS. 5 and 6, the cover plate (2128) may be formed as a plate member having a shape corresponding to the cooling sections (2125) formed in a groove shape, or may be formed as a plate member corresponding to the shape of the entire surface on which the cooling sections (2125) are formed.

[0063] In some embodiments, the upper wall (A1) of the first body parts (2121a, 2121b, 2121c) may be formed thicker than the other walls so that the cooling parts (2125) can be formed. For example, in the first body parts (2121a, 2121b, 2121c), the upper wall (A1) may be thicker than the lower wall (A2), and further thicker than the side walls.

[0064] According to the plasma source (200), when power is applied from the power supply unit (230) to the plurality of windings (224a, 224b, 224c), a magnetic force is induced in the plurality of magnetic cores (220a, 220b, 220c), and a current can be induced in the toroidal channel (214) penetrating the inside of the plurality of magnetic cores (220a, 220b, 220c) by this induced magnetic force. By this current, a gas can be activated in the toroidal channel (214), thereby forming a plasma atmosphere.

[0065] In the plasma source (200), a magnetic force is induced from a current flowing through a plurality of windings (224a, 224b, 224c) to a plurality of magnetic cores (220a, 220b, 220c), and the structure in which a current is induced in a toroidal channel (214) by this induced magnetic force may correspond to the principle of a transformer. In this respect, the plasma source (200) may also be called a transformer coupled plasma (TCP) device or a magnetic induction plasma device.

[0066] In some embodiments, in the transformer structure, the plurality of windings (224a, 224b, 224c) may function as a primary coil, and the toroidal channel (214) defined by the plurality of body parts (212a, 212b, 212c) may function as a secondary coil. In this respect, the plurality of windings (224a, 224b, 224c) may be referred to as a primary coil or primary winding, and the current flowing in the plurality of windings (224a, 224b, 224c) may be referred to as a primary current. Furthermore, the current induced in the toroidal channel (214) may also be referred to as a secondary current.

[0067] According to the plasma source (200) described above, by combining a plurality of magnetic cores (220a, 220b, 220c) on a plurality of body parts (212a, 212b, 212c), plasma can be stably formed in the toroidal channel (214), and further, by controlling the temperature of the plurality of body parts (212a, 212b, 212c) through the cooling parts (2125), plasma damage to the reaction body (210) can be reduced. In addition, by forming cooling parts (2125) on each of the plurality of body parts (212a, 212b, 212c), the temperature of the reaction body (210) can be uniformly controlled overall.

[0068] FIG. 7 is a schematic perspective view showing a cut portion of a plasma source assembly (3000) according to an embodiment of the present invention.

[0069] Referring to FIG. 7, the plasma source assembly (3000) may include a gas discharge plate (7000) and at least one plasma source (3100).

[0070] The plasma source (3100) may have substantially the same structure as the plasma source (200) described above, and thus, reference may be made to the configuration and description of the plasma source (200). A plurality of gas discharge holes (7100) may be formed in the gas discharge plate (7000). The gas discharge holes (7100) are hole structures penetrating the gas discharge plate (7000) and may be formed in the shape of a cylinder, cone, pyramid, or the like.

[0071] The plasma source (3100) may be coupled to the gas discharge plate (7000) to supply an activated process gas to the gas discharge plate (7000). For example, the gas discharge holes (7100) may be formed on the gas discharge plate (7000) to conform to the shape of the plasma source (3100) so that the gas discharge holes (7100) are in communication with the openings (2124) of the plasma source (3100) and are aligned with the openings (2124).

[0072] In this way, by combining the gas discharge plate (7000) with the plasma source (3100), the activated process gas generated in the plasma source (3100) can be easily supplied to the lower portion of the plasma source (3100) through the opening (2124) and then sprayed through the gas discharge plate (7000), and conversely, particles and the like can be prevented from flowing into the plasma source (3100) from outside the gas discharge plate (7000).

[0073] In some embodiments, a source insulation member (3170) may be interposed between the plasma source (3100) and the gas discharge plate (7000). Accordingly, noise currents such as ground current and leakage current can be prevented from being transmitted to the plasma source (3100) through the gas discharge plate (7000).

[0074] In some other embodiments, the gas discharge plate (7000) may be formed of an insulating material.

[0075] FIGS. 8 to 11 are schematic perspective views showing cut-away portions of plasma source assemblies (3000a, 3000b, 3000c, 3000d) according to embodiments of the present invention.

[0076] Referring to FIGS. 8 to 11, the plasma source assemblies (3000a, 3000b, 3000c, 3000d) may each include a gas discharge plate (7000), a first plasma source (3200), and a second plasma source (3100).

[0077] The second plasma source (3100) may have substantially the same structure as the aforementioned plasma source (200), and thus reference may be made to the configuration and description of the plasma source (200). The first plasma source (3200) may have a similar structure as the aforementioned plasma source (200), except that some of the configurations may be modified from the plasma source (200) in that the diameter thereof is smaller. For example, in the first plasma source (3200), the reaction body (210) may be composed of one or two pieces instead of three, and accordingly, one or two magnetic cores may be provided.

[0078] The first plasma source (3200) may be provided with a first opening (2124a) through which a process gas activated by the first plasma source (3200) is discharged, and the second plasma source (3100) may be provided with a second opening (2124b) through which a process gas activated by the second plasma source (3100) is discharged. The description of the opening (2124) of the plasma source (200) may be referred to for the first opening (2124a) and the second opening (2124b).

[0079] The first plasma source (3200) and the second plasma source (3100) may be respectively coupled to the gas discharge plate (7000). For example, the second plasma source (3100) may be coupled to the gas discharge plate (7000) so as to be spaced apart from the first plasma source (3200). More specifically, the first plasma source (3200) may be coupled to the inner side of the gas discharge plate (7000), and the second plasma source (3100) may be coupled to the outer side of the gas discharge plate (7000) so as to be disposed outside the first plasma source (3200).

[0080] In some embodiments, the gas discharge plate (7000) may include a first gas discharge portion (7000a) to which a first plasma source (3200) is coupled and a second gas discharge portion (7000b) to which a second plasma source (3100) is coupled. For example, the first gas discharge portion (7000a) may refer to an inner portion of the gas discharge plate (7000), and the second gas discharge portion (7000b) may refer to an outer portion of the gas discharge plate (7000). An insulating member (3270) may be interposed between the first gas discharge portion (7000a) and the first plasma source (3200), and a source insulating member (3170) may be interposed between the second gas discharge portion (7000b) and the second plasma source (3100).

[0081] The process gas activated in the first plasma source (3200) can be supplied to the first gas discharge unit (7000a) through the first opening (2124a), and the process gas activated in the second plasma source (3100) can be supplied to the second gas discharge unit (7000b) through the second opening (2124b).

[0082] In this way, by arranging a plurality of plasma sources, for example, a first plasma source (3200) and a second plasma source (3100), on a gas discharge plate (7000), the amount of emission of activated process gas, for example, radicals, can be controlled for each region. For example, the amount of radicals emitted from the first plasma source (3200) and the second plasma source (3100) can be controlled depending on the size and shape of the first opening (2124a) and the second opening (2124b).

[0083] In some embodiments, as illustrated in FIG. 8, in the plasma source assembly (3000a), the first gas discharge portion (7000a) and the second gas discharge portion (7000b) may be integrally formed on the same plane. Accordingly, the first opening (2124a) of the first plasma source (3200) and the second opening (2124b) of the second plasma source (3100) may be disposed at the same height, such that the first opening (2124a) of the first plasma source (3200) and the second opening (2124b) of the second plasma source (3100) may be disposed at the same height. In this case, the process gas supply conditions and / or plasma generation conditions of the first plasma source (3200) and the second plasma source (3100) can be controlled for each plasma source, thereby controlling the process environment, such as plasma density, for each region through the gas discharge plate (7000).

[0084] In some embodiments, as illustrated in FIGS. 9 to 11, in the plasma source assembly (3000b, 3000c, 3000d), the first gas discharge portion (7000a) and the second gas discharge portion (7000b) may be step-shaped plate members having different heights so that the first opening (2124a) and the second opening (2124b) are arranged at different heights. Through this structure, the process gas supplied from the inner side of the gas discharge plate (7000), i.e., the first gas discharge portion (7000a), may be supplied relatively to the center of the substrate support (2000), and the process gas supplied from the outer side, i.e., the second gas discharge portion (7000b), may be supplied relatively to the edge of the substrate support (2000). The first gas discharge unit (7000a) and the second gas discharge unit (7000b) can be formed separately and then combined, or can be formed integrally and then subjected to a processing process such as bending to form the gas discharge plate (7000).

[0085] For example, as illustrated in FIG. 9, the first gas discharge portion (7000a) may be positioned higher than the second gas discharge portion (7000b) so that the first opening (2124a) in the plasma source assembly (3000b) is positioned higher than the second opening (2124b). In this case, the supply density of the process gas supplied to the substrate support portion formed below the gas discharge plate (7000) may be higher than that on the inside.

[0086] As another example, as illustrated in FIG. 10, in the plasma source assembly (3000c), the gas discharge plate (7000) is a stepped plate member including a horizontal wall and a vertical wall extending vertically downward around an edge of the horizontal wall to have different heights, and a first gas discharge portion (7000a) may be formed on the horizontal wall, and a second gas discharge portion (7000b) may be formed on the vertical wall.

[0087] Specifically, the first gas discharge unit (7000a) and the second gas discharge unit (7000b) may be arranged at a right angle to each other. Accordingly, the first gas discharge unit (7000a) may be arranged on a plane so that the first opening (2124a) faces downward, and the second gas discharge unit (7000b) may be arranged on a vertical plane so that the second opening (2124b) faces sideways. In this case, the supply density of the process gas supplied to the substrate support unit formed at the lower side of the gas discharge plate (7000) may be higher than that on the inner side.

[0088] As another example, as illustrated in FIG. 11, in the plasma source assembly (3000d), the first gas discharge portion (7000a) may be arranged on a plane, and the second gas discharge portion (7000b) may be arranged to slope downward from the end of the first gas discharge portion (7000a) toward the outside. In this case, the supply density of the process gas supplied to the substrate support portion formed at the bottom of the gas discharge plate (7000) may be higher than that on the inside.

[0089] In addition, although not shown, the second gas discharge portion (7000b) may be positioned higher than the first gas discharge portion (7000a) so that the second opening (2124b) formed on the outside of the plasma source assembly is positioned higher than the first opening (2124a) formed on the inside. In this case, the gas supplied from the center of the gas discharge plate (7000) flows from the center of the substrate support portion formed below to the edge portion, and additionally, the activated gas may be supplied to the edge portion of the substrate support portion, which has a relatively low reaction with the activated gas.

[0090] The above-described plasma source assemblies (3000, 3000a, 3000b, 3000c, 3000d) refer to a structure in which plasma sources (3100, 3200) are coupled to a gas discharge plate (7000), but are not limited to this terminology, and the plasma source and the plasma source assembly may not be distinguished and may all be referred to as plasma sources or may all be referred to as plasma source assemblies.

[0091] FIG. 12 is a schematic cross-sectional view showing a substrate processing device (5000a) according to one embodiment of the present invention.

[0092] Referring to FIG. 12, the substrate processing device (5000a) may include a process chamber (1000), a gas injection unit (4000), a substrate support unit (2000), at least one plasma source assembly (3000a), and a control unit.

[0093] The process chamber (1000) may have a reaction space (A) formed therein. The process chamber (1000) may include a chamber lid (1100a) at the top to seal the interior. The process chamber (1000) may be connected to a vacuum pump (1300) through an exhaust unit (1200) to form a vacuum atmosphere. Furthermore, the process chamber (1000) may include an entrance for loading a substrate (S) into or unloading the substrate (S) from the reaction space (A) and a gate (not shown) for opening and closing the entrance.

[0094] The gas injection unit (4000) may be coupled to the process chamber (1000) to inject process gas supplied from the outside of the process chamber (1000) into the reaction space (A). For example, the gas injection unit (4000) may be coupled to the upper portion of the process chamber (1000) so as to face the substrate support unit (2000). The gas injection unit (4000) may supply process gas, such as a source gas, a reaction gas, an inert gas, etc., onto the substrate (S) within the reaction space (A).

[0095] In some embodiments, the gas injection unit (4000) may be understood as a structure coupled to the process chamber (1000) or may be understood as a structure coupled to the chamber lid (1100a).

[0096] The plasma source assembly (3000a) is for activating a process gas supplied from the outside, and the description of FIG. 8 can be referenced. The plasma source assembly (3000a) can be coupled to the process chamber (1000) facing the substrate support (2000). For example, the plasma source assembly (3000a) can be coupled to the chamber lid (1100a). The plasma source assembly (3000a) can supply an activated process gas, such as radicals, to a lower portion thereof, for example, an internal space of a gas injection unit (4000).

[0097] For example, the first plasma source assembly (3200) may be disposed in a donut shape on the center portion of the chamber lid (1100a), and the second plasma source assembly (3100) may be disposed on the edge portion of the chamber lid (1100a) in a donut structure with a larger diameter surrounding the donut structure of the first plasma source assembly (3200). The first plasma source (3200) may be supplied with a process gas through the first gas pipe (3280), and the second plasma source (3100) may be supplied with a process gas through the second gas pipe (3180). This plasma source assembly (3000a) enables the activated process gas to be injected throughout the center and edge portions of the gas injection unit (4000).

[0098] In some embodiments, the gas injection unit (4000) may include a distribution plate (4100) for injecting an activated process gas supplied from the plasma source assembly (3000a) into the reaction space (A). A plurality of injection holes may be formed in the distribution plate (4100) in a vertical direction. Optionally, the gas injection unit (4000) may further include a middle plate, such as a blocker plate, for injecting gas between the top lid (1100) and the distribution plate (4100).

[0099] In some embodiments, the gas injection unit (4000) may further include a separate gas inlet to supply process gas into the interior thereof without passing through the plasma source assembly (3000a). In this case, the gas injection unit (4000) may supply process gas activated through the plasma source assembly (3000a) and process gas inactivated without passing through the plasma source assembly (3000a) together.

[0100] The substrate support (2000) may be coupled to the process chamber (1000) to support the substrate (S) within the reaction space (A). For example, the substrate support (2000) may be installed in the process chamber (1000) facing the gas injection unit (4000). Furthermore, the substrate support (2000) may include a heater (not shown) for heating the substrates (S) therein. Since the substrate support (2000) is configured to place the substrate (S) thereon, it may also be called a substrate mounting unit, a susceptor, a substrate holder, etc.

[0101] The above control unit can control the flow rate of the process gas supplied to the first plasma source assembly (3200) and the second plasma source assembly (3100), respectively.

[0102] For example, the flow rate of the process gas supplied to the first plasma source assembly (3200) that supplies the activated process gas to the center of the gas injection unit (4000) can be controlled to be relatively smaller, and the flow rate of the process gas supplied to the second plasma source assembly (3100) that supplies the activated process gas to the edge of the gas injection unit (4000) can be controlled to be relatively larger. At this time, the current applied to the plurality of windings formed in each plasma source assembly can be controlled according to the flow rates of the process gas supplied to the first plasma source assembly (3200) and the second plasma source assembly (3100).

[0103] By controlling the flow rates of the process gases supplied to the first plasma source assembly (3200) and the second plasma source assembly (3100), the activated process gas can be controlled to be supplied uniformly throughout the substrate support (2000).

[0104] Fig. 13 is a schematic cross-sectional view showing a substrate processing device (5000b) according to another embodiment of the present invention. The substrate processing device (5000b) is a device that adds or modifies some components from the substrate processing device (5000a) of Fig. 12, and since the two embodiments can be referenced to each other, any overlapping descriptions will be omitted.

[0105] Referring to FIG. 13, the substrate processing device (5000b) may include a process chamber (1000), a gas injection unit (4000), a substrate support unit (2000), a plasma source assembly (3000b), and a control unit.

[0106] The plasma source assembly (3000b) is for activating a process gas supplied from the outside, and the description of FIG. 9 can be referenced. The plasma source assembly (3000b) can be coupled to the process chamber (1000) facing the substrate support (2000). For example, the plasma source assembly (3000b) can be coupled to the chamber lid (1100a). The plasma source assembly (3000b) can supply an activated process gas, such as radicals, to a lower portion thereof, for example, an internal space of a gas injection unit (4000).

[0107] According to the plasma source assembly (3000b), since the height of the first plasma source (3200) is higher than that of the second plasma source (3100), the amount of process gas supplied at the edge of the substrate (S) can be made higher than the amount supplied at the center. This adjustment of the amount of process gas supplied can compensate for the fact that the plasma density is relatively low at the edge of the substrate (S), thereby allowing the reaction to occur uniformly on the substrate (S).

[0108] The above control unit can control the flow rate of the process gas supplied according to the height of the first plasma source assembly (3200) and the second plasma source assembly (3100).

[0109] For example, the flow rate of the process gas supplied to the first plasma source assembly (3200) that supplies the activated process gas to the center of the gas injection unit (4000) and the flow rate of the process gas supplied to the second plasma source assembly (3100) that supplies the activated process gas to the edge of the gas injection unit (4000) can be controlled to be the same.

[0110] Accordingly, the first plasma source assembly (3200) is formed relatively closer to the substrate support (2000) than the second plasma source assembly (3100), so that even if the flow rate of the supplied process gas is the same, the activated process gas can be supplied uniformly throughout the substrate support (2000).

[0111] Alternatively, the flow rate of the process gas supplied to the first plasma source assembly (3200) that supplies the activated process gas to the center of the gas injection unit (4000) and the flow rate of the process gas supplied to the second plasma source assembly (3100) that supplies the activated process gas to the edge of the gas injection unit (4000) may be controlled differently from each other.

[0112] In some embodiments, the first plasma source assembly (3200) is formed relatively closer to the substrate support (2000) than the second plasma source assembly (3100), so that the flow rate of the process gas supplied to the second plasma source assembly (3100) can be controlled to be greater, thereby controlling the supply of the activated process gas uniformly throughout the substrate support (2000).

[0113] In another embodiment, the first plasma source assembly (3200) may be formed relatively closer to the substrate support (2000) than the second plasma source assembly (3100), so that the flow rate of the process gas supplied to the second plasma source assembly (3100) may be controlled to be smaller, thereby controlling the activated process gas to be supplied uniformly throughout the substrate support (2000).

[0114] That is, by controlling the flow rate of the process gas supplied to each of the first plasma source assembly (3200) and the second plasma source assembly (3100) according to the height at which the control unit installs the first plasma source assembly (3200) and the second plasma source assembly (3100), the activated process gas can be supplied uniformly throughout the substrate support unit (2000).

[0115] The above-described substrate processing devices (5000a, 5000b) can be used as a thin film deposition device, such as an atomic layer deposition (ALD) device or a chemical vapor deposition (CVD) device.

[0116] Meanwhile, the substrate processing devices (5000a, 5000b) are shown with a structure using plasma source assemblies (3000a, 3000b), but can be modified to use plasma source assemblies (3000c, 3000d).

[0117] According to the substrate processing devices (5000a, 5000b), since the plasma source assemblies (3000a, 3000b) are directly connected to the gas injection units (4000), an activated process gas, for example, radicals, can be directly supplied to the substrate (S), thereby reducing the supply path of radicals. Accordingly, when the plasma source assemblies (3000a, 3000b) are used, the recombination of radicals can be reduced compared to when a conventional remote plasma device is used, thereby increasing the supply efficiency of radicals and thus enhancing process reliability.

[0118] In addition, according to the substrate processing devices (5000a, 5000b), cooling units (2125) are formed within the plasma source assemblies (3000a, 3000b), thereby controlling the temperature of the plasma source assemblies (3000a, 3000b), thereby reducing plasma damage of the plasma source assemblies (3000a, 3000b), and increasing substrate processing stability and process efficiency.

[0119] While the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely exemplary, and those skilled in the art will appreciate that various modifications and equivalent alternative embodiments are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. A gas discharge plate having multiple gas discharge holes formed therein; and At least one plasma source coupled to the gas discharge plate to supply an activated process gas to the gas discharge plate, At least one plasma source, A reaction body comprising a plurality of body parts each having gas diffusion spaces formed therein, and a plurality of insulating parts coupled between the plurality of body parts so that the gas diffusion spaces are in communication with each other, wherein an opening is formed in at least a portion of each of the plurality of body parts, and the gas diffusion spaces within the plurality of body parts form a toroidal channel as a whole; A plurality of magnetic cores spaced apart from each other along the toroidal channel, each surrounding the plurality of body parts; and It includes a plurality of windings arranged to wind the plurality of magnetic cores, and receives power from a power supply unit to induce a magnetic force within the plurality of magnetic cores, A plasma source assembly, wherein cooling sections for flowing a cooling medium are formed within at least a portion of each of the plurality of body sections.

2. In paragraph 1, The above plurality of body parts each include first body parts having a first length and second body parts having a second length, The above first length is greater than the above second length, A plasma source assembly, wherein the plurality of magnetic cores are arranged to surround the second body parts.

3. In paragraph 2, The above cooling units are, Each of the first body parts is formed on at least one side, A plasma source assembly, wherein refrigerant inlets connected to one end of the cooling sections and refrigerant outlets connected to the other end of the cooling sections are formed on at least one surface of the first body parts.

4. In paragraph 2, Flanges are formed on both ends of the above second body parts, One side of the first body parts is connected to the flanges on one side of the second body parts, respectively, A plasma source assembly, wherein the plurality of insulating parts are respectively coupled between the flanges on the other side of the second body parts and the other side of the first body parts.

5. In paragraph 2, One side of the above second body parts is connected to the other side of the above first body parts, respectively, The above multiple insulating parts are, A plasma source assembly comprising a toroidal channel forming portion that is sealingly connected to the other side of the second body parts and one side of the adjacent first body parts, and forms the toroidal channel on the inside.

6. In paragraph 2, The above first body parts are, It includes an upper wall formed on the upper surface of the gas diffusion spaces, side walls formed on both sides in the width direction of the gas diffusion spaces, and a lower wall formed on the lower surface of the gas diffusion spaces. The cooling parts are formed on at least one side of the upper wall and the side wall, A plasma source assembly in which the opening is formed in the lower wall.

7. In paragraph 6, A plasma source assembly, wherein a cover plate is coupled to at least one of the upper wall and the side wall of the plurality of body parts to cover the groove shape of the cooling parts.

8. In paragraph 1, The above cooling units are, A euro groove patterned in a predetermined shape, Including a cover member that covers the above euro groove and forms a refrigerant path through which the cooling medium flows, A plasma source assembly, wherein a refrigerant inlet for supplying the cooling medium to the refrigerant passage is formed on one side of the cover member, and a refrigerant outlet for discharging the cooling medium through the refrigerant passage is formed on the other side of the cover member.

9. In paragraph 1, At least one plasma source, A plasma source assembly, wherein an insulating material is bonded between the gas discharge plate and the at least one plasma source.

10. In paragraph 1, The above gas discharge plate, A plasma source assembly formed of an insulating material.

11. In paragraph 1, At least one plasma source, a first plasma source coupled to the gas discharge plate; and A second plasma source spaced outside the first plasma source and coupled to the gas discharge plate; Including, The above gas discharge plate, a first gas discharge unit to which the first plasma source is coupled; and A second gas discharge unit to which the second plasma source is coupled; Including, The process gas activated in the first plasma source is supplied to the first gas discharge port through the first opening, which is an opening of the first plasma source, A plasma source assembly in which the process gas activated in the second plasma source is supplied to the second gas discharge port through a second opening, which is an opening of the second plasma source.

12. In paragraph 11, The above gas discharge plate, A plasma source assembly, wherein the first gas discharge portion and the second gas discharge portion are formed integrally on the same plane.

13. In paragraph 11, The above gas discharge plate, A plasma source assembly, wherein the first gas discharge portion and the second gas discharge portion are plate members having different heights so that the first opening and the second opening are arranged at different heights.

14. In paragraph 13, The above first gas discharge unit is, A plasma source assembly, wherein the first opening is positioned higher than the second gas discharge portion, such that the first opening is positioned higher than the second opening.

15. In paragraph 13, The first gas discharge unit and the second gas discharge unit are arranged in a right-angled structure, The first gas discharge portion is arranged on a plane so that the first opening faces downward, The second gas discharge portion is arranged on a vertical plane so that the second opening faces the side. Plasma source assembly.

16. In paragraph 11, The above gas discharge plate, A step-shaped plate member including a horizontal wall and a vertical wall extending vertically downward around the edge of the horizontal wall so as to have different heights, The first gas discharge portion is formed on the horizontal wall, A plasma source assembly wherein the second gas discharge portion is formed on the vertical wall.

17. A process chamber with a reaction space formed inside; A chamber lid coupled to the upper portion of the process chamber; A substrate support coupled to the lower portion of the process chamber to support the substrate within the reaction space; at least one plasma source assembly coupled to the chamber lid and according to any one of claims 1 to 16; and A gas injection unit facing the substrate support and positioned below the at least one plasma source assembly, the gas injection unit having a gas injection plate formed thereon for injecting a process gas activated by the plasma source assembly onto the substrate support; A substrate processing device including:

Images