Atomic layer deposition apparatus for forming thin film on metal component for process chamber

Abstract

The present invention relates to an atomic layer deposition apparatus for forming a thin film on a metal component for a process chamber, in which a thin film is formed by depositing an atomic layer on a surface of a deposition target object and, particularly, to an atomic layer deposition apparatus for forming a thin film on a metal component for a process chamber, being capable of uniformly forming a thin film on a deposition target object by uniformly flowing a process gas inside a reaction chamber.

Description

Atomic layer deposition device for forming a thin film on metal parts for a process chamber

[0001] The present invention relates to an atomic layer deposition device for forming a thin film on a metal part for a process chamber by repeatedly depositing atomic layers on a metal part used in the process chamber to form a thin film.

[0002] CVD devices, PVD devices, dry etching devices, etc. (hereinafter referred to as "process chambers") used in the manufacture of semiconductors or displays utilize reaction gases, etching gases, or cleaning gases within the process chamber. Since these gases primarily include corrosive gases such as Cl, F, or Br, corrosion resistance is a critical requirement.

[0003] Because of this, there was a prior art that used stainless steel as a metal part for the process chamber, but its thermal conductivity was not sufficient, and heavy metals such as Cr or Ni, which are alloy components of stainless steel, were released during the process and became a source of contamination.

[0004] Therefore, metal components for process chambers using aluminum or aluminum alloys have been developed. These components are lighter than stainless steel, have excellent thermal conductivity, and are free from heavy metal contamination. However, the surface of aluminum or aluminum alloys has poor corrosion resistance, so surface treatment methods have been studied.

[0005] There are various methods for surface treatment of metal parts, and vapor deposition is one of the most widely used methods.

[0006] Vapor deposition methods use one or more gases as the raw material for forming a thin film. Examples of these vapor deposition methods include chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD).

[0007] Among these, the atomic layer deposition method is a deposition method that shows excellent spreadability and uniformity by forming a thin film through surface reaction while injecting precursor gases in a time-division manner.

[0008] Using this atomic layer deposition method, precursor gases can be sequentially injected onto the substrate surface to form a thin film through surface reaction.

[0009] When a thin film is formed on a metal part for a process chamber using the atomic layer deposition method, the corrosion resistance and voltage resistance are improved, but there is a problem in that it is difficult to uniformly conduct the atomic layer deposition.

[0010] In detail, the atomic layer deposition method forms a thin film on the surface of a deposition target by injecting a process gas (precursor gas, reaction gas) into a reaction chamber. However, if the flow of the process gas inside the reaction chamber is not uniform, an atomic layer is formed unevenly on the surface of the deposition target, which causes unevenness in the thin film formed by multiple atomic layers.

[0011] When an uneven film is formed as described above, cracks may occur in the film or the film may peel off due to changes in the internal stress of the metal parts for the process chamber or the influence of thermal expansion. Therefore, the exposed part of the metal parts for the process chamber where the film has peeled off may act like a lightning rod, causing plasma arcing in which plasma is instantly concentrated, which may cause the metal parts for the process chamber to partially melt or be damaged.

[0012] [Prior Art Literature]

[0013] [Patent Document]

[0014] (Patent Document 1) Korean Patent Publication No. 10-2021-0069243

[0015] The present invention has been devised to solve the aforementioned problem, and its purpose is to provide an atomic layer deposition device that forms a thin film on a metal part for a process chamber by uniformly flowing a process gas inside a reaction chamber to uniformly form a thin film on a deposition target.

[0016] An atomic layer deposition device for forming a thin film on a metal part for a process chamber according to one feature of the present invention comprises: a reaction chamber in which a deposition target is accommodated; a supply unit provided on one side of the reaction chamber to supply a process gas into the interior of the reaction chamber; an exhaust unit provided on the other side of the reaction chamber to exhaust the process gas supplied into the interior of the reaction chamber; and a uniformization means for uniformly flowing the process gas within the reaction chamber to uniformly form a thin film on the surface of the deposition target.

[0017] In addition, the homogenizing means includes a heating unit that heats the reaction chamber.

[0018] In addition, the homogenizing means includes a first distribution plate provided on the inside of the supply port of the supply unit to distribute the process gas supplied to the reaction chamber.

[0019] In addition, the first distribution plate includes a first body having a first inclined portion formed to be inclined inwardly so as to protrude inwardly; and a first separation portion provided on the outside of the first body so that one inner wall of the reaction chamber and the first body are connected while a first separation space is formed between the first body and one inner wall of the reaction chamber.

[0020] In addition, the homogenizing means includes a second distribution plate provided on the inside of the exhaust port of the exhaust section so that the process gas exhausted from the reaction chamber to the exhaust port is exhausted in a dispersed state; and the second distribution plate includes a second body provided with a second inclined portion formed to be inclined inwardly so as to protrude inwardly; and a second separation portion provided on the outside of the second body so that the other inner wall of the reaction chamber and the second body are connected while a second separation space is formed between the other inner wall of the reaction chamber and the second body.

[0021] In addition, the homogenizing means includes a support member that supports the deposition object so that the deposition object is accommodated in the reaction chamber while being inclined.

[0022] In addition, a plurality of the deposition objects are stored in the reaction chamber, and a plurality of the support parts are provided in the same number as the plurality of deposition objects, so that the plurality of deposition objects are supported on the plurality of support parts, respectively.

[0023] In addition, the supply unit includes a supply pipe through which the process gas flows; and a supply port provided on one side of the reaction chamber and communicating with the supply pipe; and the exhaust unit includes an exhaust pipe through which the process gas flows; and an exhaust port provided on the other side of the reaction chamber and communicating with the exhaust pipe; wherein the supply port and the exhaust port are not located on the same horizontal line.

[0024] According to the atomic layer deposition device for forming a thin film on a metal part for a process chamber of the present invention as described above, the following effects are obtained.

[0025] A supply section is provided on one side of the reaction chamber, an exhaust section is provided on the other side, and a process gas flows uniformly inside the reaction chamber by a uniforming means, so that an atomic layer is uniformly deposited on the surface of the deposition target and the surface of the injection hole, so that a thin film can be uniformly formed.

[0026] The temperature inside the reaction chamber increases by the heating unit, which is a homogenizing means, and the flow of process gas inside the reaction chamber becomes active, so that an atomic layer can be uniformly deposited on the surface of the deposition target and the surface of the injection hole.

[0027] Since the support, which is a uniforming means, has an inclined shape and the deposition target is stored inclined, the area over which the process gas flows on the surface of the deposition target increases, so that an atomic layer can be uniformly deposited on the surface of the deposition target and the surface of the injection hole.

[0028] Through the first and second injection plates, which are the homogenizing means, the process gas flows uniformly inside the reaction chamber without dead zones, thereby more effectively depositing an atomic layer uniformly on the surface of the deposition target and the surface of the injection hole.

[0029] Due to the height difference between the supply and exhaust sections, the flow of process gas inside the reaction chamber can be more smoothly achieved, thereby minimizing dead space and increasing the efficiency of atomic layer deposition.

[0030] FIG. 1 is a perspective view of an atomic layer deposition apparatus for forming a thin film on a metal part for a process chamber according to a first embodiment of the present invention.

[0031] Fig. 2 is a side cross-sectional view showing a state in which a deposition target is stored in an atomic layer deposition device that forms a thin film on a metal component for the process chamber of Fig. 1.

[0032] Figure 3 is a cross-sectional perspective view of an atomic layer deposition device for forming a thin film on a metal part for a process chamber according to a second embodiment of the present invention.

[0033] Fig. 4 is a side cross-sectional view showing a state in which a deposition target is stored in an atomic layer deposition device that forms a thin film on a metal component for the process chamber of Fig. 3.

[0034] FIG. 5 is a side cross-sectional view showing a state in which a deposition target is stored in an atomic layer deposition device for forming a thin film on a metal part for a process chamber according to a third embodiment of the present invention.

[0035] FIG. 6 is a side cross-sectional view showing a state in which a deposition target is stored in an atomic layer deposition device for forming a thin film on a metal part for a process chamber according to a fourth embodiment of the present invention.

[0036] FIG. 7 is a side cross-sectional view showing a state in which a deposition target is stored in an atomic layer deposition device for forming a thin film on a metal part for a process chamber according to a fifth embodiment of the present invention.

[0037] FIG. 8 is a side cross-sectional view showing a state in which a deposition target is stored in an atomic layer deposition device for forming a thin film on a metal part for a process chamber according to a sixth embodiment of the present invention.

[0038] The following merely exemplifies the principles of the invention. Therefore, those skilled in the art will be able to implement the principles of the invention and invent various devices within the scope and spirit of the invention, even if not explicitly described or illustrated herein. Furthermore, all conditional terms and embodiments listed herein are expressly intended, in principle, to facilitate understanding of the invention's concepts and should be understood as being solely intended to facilitate understanding and are not intended to be limited to the specifically enumerated embodiments and conditions.

[0039] The above-described purposes, features and advantages will become clearer through the following detailed description with reference to the attached drawings, so that a person having ordinary skill in the art to which the invention pertains can easily practice the technical idea of ​​the invention.

[0040] Embodiments described herein will be described with reference to cross-sectional and / or perspective views, which are ideal exemplary drawings of the present invention. The thicknesses of films and regions, etc., illustrated in these drawings are exaggerated for the purpose of effectively explaining the technical contents. The shapes of the exemplary drawings may be modified due to manufacturing techniques and / or tolerances. In addition, the number of metal moldings illustrated in the drawings is only a portion of the number illustrated in the drawings for illustrative purposes. Therefore, embodiments of the present invention are not limited to the specific shapes illustrated, but also include changes in shapes produced according to the manufacturing process. Technical terms used herein are only used to describe specific embodiments and are not intended to limit the present invention. The singular expression “a” includes the plural expression unless the context clearly indicates otherwise. In this specification, it should be understood that terms such as “include” or “have” are intended to specify the presence of a feature, number, step, operation, component, part, or combination thereof described in this specification, but do not preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0041] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. In describing various embodiments below, components that perform the same function will be given the same designations and reference numbers for convenience, even if the embodiments differ. Furthermore, configurations and operations already described in other embodiments will be omitted for convenience.

[0042] Atomic layer deposition device (10) for forming a thin film on a metal part for a process chamber according to the first embodiment

[0043] Hereinafter, with reference to FIGS. 1 and 2, an atomic layer deposition device (10) for forming a thin film on a metal part for a process chamber according to a first embodiment of the present invention will be described.

[0044] FIG. 1 is a perspective view of an atomic layer deposition apparatus for forming a thin film on a metal part for a process chamber according to a first embodiment of the present invention, and FIG. 2 is a side cross-sectional view illustrating a state in which a deposition target is accommodated in the atomic layer deposition apparatus for forming a thin film on a metal part for a process chamber of FIG. 1.

[0045] As illustrated in FIGS. 1 and 2, an atomic layer deposition apparatus (10) for forming a thin film on a metal part for a process chamber according to a first embodiment of the present invention may be configured to include a reaction chamber (100) in which a deposition target (20) is accommodated, a supply unit (200) provided on one side of the reaction chamber (100) to supply a process gas into the interior of the reaction chamber (100), an exhaust unit (300) provided on the other side of the reaction chamber (100) to exhaust the process gas supplied into the interior of the reaction chamber (100), a support unit (400) for supporting the deposition target (20) inside the reaction chamber (100), and a uniformization means (500) for uniformly flowing the process gas inside the reaction chamber (100) to uniformly form a thin film on the surface of the deposition target (20).

[0046] Additionally, the homogenizing means (500) may be configured to include a heating unit (500) that heats the reaction chamber (100).

[0047] The deposition target (20) mentioned in the following description is a metal component for a process chamber used in a process chamber. In this case, the process chamber is a process chamber device used in a semiconductor or display manufacturing process, such as a CVD device, a PVD device, or a dry etching device.

[0048] Metal parts for the process chamber may include a diffuser, susceptor, backing plate, shadow frame, upper electrode, wall liner, etc. that form the process chamber.

[0049] In the present invention, as an example, the deposition target (20) is described as a diffuser for a process chamber. The deposition target (20) is formed with an injection hole (21) through which a gas for the process chamber is injected.

[0050] The reaction chamber (100) may have a hexahedral shape with a rectangular cross-section.

[0051] A deposition target (20) is stored inside the reaction chamber (100).

[0052] A curved surface (160) may be formed at the corner of the reaction chamber (100).

[0053] The curved portion (160) functions to make the flow of process gas inside the reaction chamber (100) smoother.

[0054] A supply part (200) is provided on one side of the reaction chamber (100), and an exhaust part (300) is provided on the other side of the reaction chamber (100).

[0055] In the first embodiment of the present invention, it is described based on the assumption that one side of the reaction chamber (100) equipped with the supply section (200) is the left side of the reaction chamber (100), and the other side of the reaction chamber (100) equipped with the exhaust section (300) is the right side of the reaction chamber (100).

[0056] A first fixing plate (111) is provided on the left side of the reaction chamber (100), and a second fixing plate (112) is provided on the right side of the reaction chamber (100).

[0057] The first and second shafts (131, 132) are provided in the left and right longitudinal directions on the upper part of the reaction chamber (100) by the first fixing plate (111) and the second fixing plate (112).

[0058] One end (i.e., the left end) of the first shaft (131) is inserted into a first fixing plate front hole (not shown in the drawing) provided in front of the first fixing plate (111), and the other end (i.e., the right end) of the first shaft (131) is inserted into a second fixing plate front hole (not shown in the drawing) provided in front of the second fixing plate (112). Accordingly, the first shaft (131) is fixed by the first fixing plate (111) and the second fixing plate (112) and is placed in front of the upper portion of the reaction chamber (100).

[0059] The second shaft (132) has one end (i.e., the left end) inserted into a first fixing plate rear hole (not shown in the drawing) provided at the rear of the first fixing plate (111), and the other end (i.e., the right end) of the second shaft (132) is inserted into a second fixing plate rear hole (not shown in the drawing) provided at the rear of the second fixing plate (112). Accordingly, the second shaft (132) is fixed by the first fixing plate (111) and the second fixing plate (112) and is placed at the rear of the upper portion of the reaction chamber (100).

[0060] The first shaft (131) and second shaft (132) as described above have the function of preventing the reaction chamber (100) from being deformed or bent when the reaction chamber (100) is heated by the heating unit (500). In addition, by reinforcing the strength of the reaction chamber (100), they have the function of preventing the reaction chamber (100) from being deformed by other physical forces.

[0061] The first shaft (131) and the second shaft (132) are spaced apart from each other in the vertical direction from the reaction chamber (100).

[0062] The first shaft (131) and the second shaft (132) are spaced apart from each other in the front-rear direction.

[0063] The lower part of the reaction chamber (100) is provided with a flange (150) protruding outward.

[0064] The flange (150) is provided on the front, rear, left, and right sides of the lower portion of the reaction chamber (100) and is provided to protrude outward along the lower perimeter of the reaction chamber (100).

[0065] The flange (150) functions to increase the durability of the reaction chamber (100) together with the first shaft (131) and the second shaft (132). Therefore, the reaction chamber (100) can prevent the lower part of the reaction chamber (100) from being deformed by external physical factors or heat from the heating unit (500) through the flange (150).

[0066] The flange (150) can be formed by forming the plate forming the lower surface of the reaction chamber (100) to have a larger area than the plate forming the upper surface of the reaction chamber (100). That is, the surfaces of the plate forming the lower surface of the reaction chamber (100) that protrude outward from the plate forming the upper surface of the reaction chamber (100) form the flange (150).

[0067] The supply unit (200) has the function of supplying process gas into the interior of the reaction chamber (100).

[0068] The supply unit (200) may be configured to include a supply pipe (210) through which process gas supplied into the interior of the reaction chamber (100) flows, and a supply port (230) provided on one side of the reaction chamber (100) and communicating with the supply pipe (210).

[0069] The supply pipe (210) is connected at one end to the first external gas supply unit (not shown) and the second external gas supply unit (not shown), and the other end is connected to the supply port (230).

[0070] The first external gas supply unit and the second external gas supply unit function to supply process gas from outside the atomic layer deposition device (10) that forms a thin film on a metal part for a process chamber. Accordingly, the process gas supplied from the external gas supply unit flows inside the supply pipe (210).

[0071] The process gas includes a first gas (GAS1), a second gas (GAS2), a first purge gas (PG1), and a second purge gas (PG2).

[0072] The first gas (GAS1) and the first purge gas (PG1) are supplied from the first external gas supply unit and supplied into the reaction chamber (100) through the supply pipe (210) and the supply port (230).

[0073] The second gas (GAS2) and the second purge gas (PG2) are supplied from the second external gas supply unit and supplied into the reaction chamber (100) through the supply pipe (210) and the supply port (230).

[0074] The first gas (GAS1) may be a precursor and may include a metal oxide such as trimethylaluminum (TMA).

[0075] The second gas (GAS2) is a counter reactant and may include substances such as water (H2O), hydrogen peroxide (H2O2), and ozone (O3).

[0076] The first purge gas (PG1) and the second purge gas (PG2) are non-reactive inert gases and may include argon (Ar), etc.

[0077] The specific process of the atomic layer deposition process using the first gas (GAS1), the second gas (GAS2), the first purge gas (PG1), and the second purge gas (PG2) will be described later.

[0078] In this specification, the first gas (GAS1) may be referred to as a 'precursor gas', the second gas (GAS2) may be referred to as a 'reactant gas', and the first purge gas (PG1) and the second purge gas (PG2) may be referred to as 'purge gases'.

[0079] The supply port (230) is formed by opening one side of the reaction chamber (100), i.e., the left side of the reaction chamber (100).

[0080] The supply port (230) is connected to the supply pipe (210). Therefore, the process gas flowing through the supply pipe (210) is supplied into the interior of the reaction chamber (100) through the supply port (230).

[0081] The exhaust section (300) has the function of exhausting the process gas inside the reaction chamber (100) from the inside of the reaction chamber (100) to the outside of the reaction chamber (100).

[0082] The exhaust unit (300) may be configured to include an exhaust pipe (310) through which process gas exhausted from inside the reaction chamber (100) flows, and an exhaust port (330) provided on the other side of the reaction chamber (100) and communicating with the exhaust pipe (310).

[0083] The exhaust pipe (310) is connected at one end to the exhaust port (330) and at the other end to an external gas exhaust port (not shown).

[0084] The external gas exhaust unit functions to exhaust the process gas inside the reaction chamber (100) from the outside of the atomic layer deposition device (10) that forms a thin film on a metal part for the process chamber. Therefore, the process gas exhausted inside the reaction chamber (100), i.e., at least one of the first gas (GAS1), the second gas (GAS2), the first purge gas (PG1), and the second purge gas (PG2) flows inside the exhaust pipe (310).

[0085] The exhaust port (330) is formed by opening the other side of the reaction chamber (100), i.e., the right side of the reaction chamber (100).

[0086] The exhaust port (330) is connected to the exhaust pipe (310). Therefore, the process gas flowing through the exhaust pipe (310) is exhausted from the inside of the reaction chamber (100) to the exhaust pipe (310) through the exhaust port (330).

[0087] The supply port (230) and the exhaust port (330) are located at corresponding positions. That is, the supply port (230) and the exhaust port (330) are located on the same horizontal line, and the center line of the supply port (230) and the center line of the exhaust port (330) are the same.

[0088] The support member (400) is provided inside the reaction chamber (100) and has the function of supporting the deposition target (20).

[0089] The deposition target (20) is supported and fixed inside the reaction chamber (100) by the support member (400).

[0090] The heating unit (500) has the function of heating the reaction chamber (100).

[0091] When the reaction chamber (100) is heated by the heating unit (500), the temperature inside the reaction chamber (100) rises, causing the flow of process gas to become more active.

[0092] A plurality of heating units (500) may be provided. The plurality of heating units (500) may heat at least one of the lower surface, upper surface, front surface, left and right sides, and rear surface of the reaction chamber (100).

[0093] As shown in FIGS. 1 and 2, when the heating unit (500) is provided on the upper surface of the reaction chamber (100), the heating unit (500) is located below the first shaft (131) and the second shaft (132). Therefore, the heating unit (500) provided on the upper surface of the reaction chamber (100) is interposed between the reaction chamber (100) and the first and second shafts (131, 132).

[0094] As described above, as multiple heating units (500) are provided, the temperature uniformity inside the reaction chamber (100) increases, and the flow of process gas becomes more active.

[0095] Hereinafter, a process of depositing a thin film on a deposition target (20) through an atomic layer deposition device (10) that forms a thin film on a metal part for a process chamber according to the first embodiment of the present invention described above will be described.

[0096] First, the deposition target (20) is placed in the reaction chamber (100).

[0097] The reaction chamber (100) can accommodate a deposition target (20) inside the reaction chamber (100) by opening at least one of the front side, the rear side, the upper side, the lower side, the left side, and the right side.

[0098] When the upper surface of the reaction chamber (100) is opened, the upper surface of the reaction chamber (100) is opened with the first shaft (131) and the second shaft (132) removed.

[0099] For easy storage of the deposition target (20), a separate door device may be provided on the open side of the reaction chamber (100).

[0100] The deposition target (20) housed inside the reaction chamber (100) is supported and fixed by a support member (400). Thereafter, the open side (i.e., door) of the reaction chamber (100) is closed.

[0101] When the reaction chamber (100) is completely closed, the heating unit (500) heats the reaction chamber (100), and the process gas is supplied into the reaction chamber (100) through the supply unit (200).

[0102] The supply of process gas can be performed in the following steps:

[0103] First, a first deposition step may be performed in which a first gas (GAS1) is supplied from a first external gas supply unit and a second purge gas (PG2) is supplied from a second external gas supply unit. Accordingly, in the first deposition step, the first gas (GAS1) and the second purge gas (PG2) may be supplied into the reaction chamber (100) through a supply pipe (210).

[0104] In this case, the first purge gas (PG1) may not be supplied from the first external gas supply unit, and the second gas (GAS2) may not be supplied from the second external gas supply unit.

[0105] The first deposition step may be a process of depositing a precursor gas on a deposition target (20) in a general atomic layer deposition process.

[0106] The first gas (GAS1) flows from one side to the other in a laminar flow form inside the reaction chamber (100), so that it can be deposited on the surface of the deposition target (20) and the surface of the injection hole (21).

[0107] In the first deposition step as described above, the first gas (GAS1) and the second purge gas (PG2) are supplied simultaneously, thereby preventing the first gas (GAS1) from flowing to the second external gas supply unit and helping it flow to the exhaust unit (300). Here, the second purge gas (PG2) functions as a carrier gas.

[0108] In addition, since the second gas (GAS2) is not supplied from the second external gas supply unit, the first gas (GAS1) can be prevented from reacting with the second gas (GAS2) before being deposited on the deposition target (20).

[0109] After the first deposition step is performed, a second deposition step can be performed by supplying a first purge gas (PG1) from a first external gas supply unit and supplying a second purge gas (PG2) from a second external gas supply unit.

[0110] In this case, the first gas (GAS1) may not be supplied from the first external gas supply unit, and the second gas (GAS2) may not be supplied from the second external gas supply unit.

[0111] The second deposition step may be a purging process to purge the remaining precursor gas used in the process in a general atomic layer deposition process.

[0112] In the second deposition step, the first purge gas (PG1) and the second purge gas (PG2) are supplied simultaneously, thereby preventing the first purge gas (PG1) from flowing to the second external gas supply unit and helping to purge the first gas (GAS1) by flowing to the exhaust unit (300).

[0113] After the second deposition step is performed, a third deposition step can be performed in which a first purge gas (PG1) is supplied from a first external gas supply unit and a second gas (GAS2) is supplied from a second external gas supply unit.

[0114] In this case, the first gas (GAS1) may not be supplied from the first external gas supply unit, and the second purge gas (PG2) may not be supplied from the second external gas supply unit.

[0115] The third deposition step may be a process of forming an atomic layer by reacting a reaction gas with a precursor gas deposited on the surface of the deposition target (20) and the surface of the injection hole (21) in a general atomic layer deposition process.

[0116] The second gas (GAS2) flows from one side to the other in a laminar flow form inside the reaction chamber (100), thereby reacting with the first gas (GAS1) deposited on the surface of the deposition target (20) and the surface of the injection hole (21) to form an atomic layer.

[0117] In the third deposition step, the first purge gas (PG1) and the second gas (GAS2) are supplied simultaneously, thereby preventing the second gas (GAS2) from flowing to the first external gas supply unit and helping it flow to the exhaust unit (300). Here, the first purge gas (PG1) functions as a carrier gas.

[0118] In the third deposition step, since the first gas (GAS1) is not supplied from the first external gas supply unit, the second gas (GAS2) can be prevented from reacting with the first gas (GAS1) deposited on the deposition target (20) before forming an atomic layer.

[0119] After the third deposition step is performed, a fourth deposition step can be performed in which a first purge gas (PG1) is supplied from a first external gas supply unit and a second purge gas (PG2) is supplied from a second external gas supply unit.

[0120] In this case, the first gas (GAS1) may not be supplied from the first external gas supply unit, and the second gas (GAS2) may not be supplied from the second external gas supply unit.

[0121] The fourth deposition step may be a purging process to purge the remaining reaction gases used in the process in a general atomic layer deposition process.

[0122] In the fourth deposition step, the first purge gas (PG1) and the second purge gas (PG2) are supplied simultaneously, thereby preventing the second purge gas (PG2) from flowing to the first external gas supply unit and helping to purge the second gas (GAS2) by flowing to the exhaust unit (300).

[0123] The above-described first to fourth deposition steps are one cycle, and by repeating them, atomic layers are deposited to form a thin film on the surface of the deposition target (20) and the surface of the injection hole (21).

[0124] In the first to fourth deposition steps described above, the first gas (GAS1) and the first purge gas (PG1) are supplied from the first external gas supply unit connected to the supply pipe (210) of the supply unit (200), and the second gas (GAS2) and the first purge gas (PG2) are supplied from the second external gas supply unit connected to the supply pipe (210) of the supply unit (200). However, the first purge gas (PG1) and the second purge gas (PG2) may not be supplied from each of the first external gas supply unit and the second external gas supply unit, and the purge gas (PG) may be supplied from only one of the first external gas supply unit and the second external gas supply unit.

[0125] In addition, unlike the above, the first purge gas (PG1) and the second purge gas (PG2) are not supplied from the first external gas supply unit and the second external gas supply unit, respectively, and a separate third external gas supply unit may be connected to the supply pipe (210) of the supply unit (200) to supply the purge gas (PG).

[0126] The exhaust unit (300) exhausts the remaining process gas used in the atomic layer deposition process, i.e., the reaction gas and purge gas, and discharges them from the inside of the reaction chamber (100) to the outside of the reaction chamber (100).

[0127] The flow of process gas inside the reaction chamber (100) can be made more smooth by heating the inside of the reaction chamber (100) by the heating unit (500).

[0128] As the process gas flows smoothly in this way, the process gas flows uniformly within the reaction chamber (100), and as a result, the process gas can flow to the deposition target (20), i.e., the injection hole (21) of the diffuser (20). Therefore, a thin film by an atomic layer can be easily formed on the surface of the injection hole (21).

[0129] An atomic layer deposition device (10) for forming a thin film on a metal part for a process chamber according to a first embodiment of the present invention supplies and purges process gas through a supply unit (200) and an exhaust unit (300), and actively flows process gas inside a reaction chamber (100) through a heating unit (500), thereby easily forming an atomic layer on the surface of a deposition target (20) and the surface of an injection hole (21).

[0130] As described above, the atomic layer deposition apparatus (10) for forming a thin film on a metal part for a process chamber according to the first embodiment of the present invention can uniformly form a thin film formed by an atomic layer on the surface of the deposition target (20) and the surface of the injection hole (21) by implementing the uniforming means (500) as a heating unit (500). Accordingly, the deposition thickness deviation can be minimized, and the amount of precursor consumption can be minimized.

[0131] An atomic layer deposition device (10a) for forming a thin film on a metal part for a process chamber according to the second embodiment of the present invention.

[0132] Hereinafter, with reference to FIGS. 3 and 4, an atomic layer deposition device (10a) for forming a thin film on a metal part for a process chamber according to a second embodiment of the present invention will be described.

[0133] FIG. 3 is a cross-sectional perspective view of an atomic layer deposition apparatus for forming a thin film on a metal part for a process chamber according to a second embodiment of the present invention, and FIG. 4 is a side cross-sectional view showing a state in which a deposition target is accommodated in the atomic layer deposition apparatus for forming a thin film on a metal part for a process chamber of FIG. 3.

[0134] As illustrated in FIGS. 3 and 4, an atomic layer deposition device (10a) for forming a thin film on a metal part for a process chamber according to a second embodiment of the present invention may be configured to include a reaction chamber (100), a supply unit (200), an exhaust unit (300), a support unit (400), a heating unit (500), and a uniforming means (600, 700).

[0135] In addition, the homogenizing means (600, 700) may be configured to include a first distribution plate (600) provided on the inside of the supply port (230) of the supply unit (200) to disperse the process gas supplied to the reaction chamber (100), and a second distribution plate (700) provided on the inside of the exhaust port (330) of the exhaust unit (300) to ensure that the process gas exhausted from the reaction chamber (100) to the exhaust port (330) is exhausted in a dispersed state.

[0136] An atomic layer deposition device (10a) for forming a thin film on a metal part for a process chamber according to a second embodiment of the present invention is configured to include a first distribution plate (600) and / or a second distribution plate (700) in comparison with the atomic layer deposition device (10) for forming a thin film on a metal part for a process chamber according to the first embodiment of the present invention described above.

[0137] An atomic layer deposition apparatus (10a) for forming a thin film on a metal part for a process chamber according to a second embodiment of the present invention is similar to the atomic layer deposition apparatus (10) for forming a thin film on a metal part for a process chamber according to the first embodiment described above in that it additionally includes a first distribution plate (600) and a second distribution plate (700), and the remaining components are the same. Therefore, redundant descriptions will be omitted, and the description of the atomic layer deposition apparatus (10) for forming a thin film on a metal part for a process chamber according to the first embodiment of the present invention described above may be replaced.

[0138] The first distribution plate (600) is provided on the inside of the supply port (230) of the supply unit (200) to distribute the process gas supplied to the reaction chamber (100).

[0139] The first distribution plate (600) may be configured to include a first body (610) having a first inclined portion (620) formed to be inclined inwardly so as to protrude inwardly, and a first separation portion (630) provided on the outside of the first body (610) so that the first body (610) and one inner wall of the reaction chamber (100) are connected while a first separation space (650) is formed between the first body (610) and one inner wall of the reaction chamber (100).

[0140] In FIGS. 3 and 4, one inner wall of the reaction chamber (100) can be seen as the left inner wall of the reaction chamber (100).

[0141] The first inclined portion (620) forms the upper surface, lower surface, front surface, and rear surface of the first body (610). Accordingly, the upper surface, lower surface, front surface, and rear surface of the first body (610) are all formed to be inclined inward. In this case, the upper surface, lower surface, front surface, and rear surface of the first body (610) forming the first inclined portion (620) can all be formed as triangles of the same shape.

[0142] On the inside of the first body (610), a first inclined portion (620), that is, a first tip portion (640) in which the upper surface, lower surface, front surface, and rear surface of the first body (610) are all connected, is formed.

[0143] The first tip (640) is the inner vertex of the first slope (620). That is, it is the vertex that connects the upper surface, lower surface, front surface, and rear surface of the first body (610).

[0144] The first separation unit (630) has one end coupled to the first body (610) and the other end coupled to one inner wall of the reaction chamber (100).

[0145] The first separation portion (630) has a length in the left-right direction. Therefore, a first separation space (650) is formed between the first body (610) and one inner wall of the reaction chamber (100) by the first separation portion (630).

[0146] A plurality of these first separation parts (630) may be provided.

[0147] As shown in FIGS. 3 and 4, the first body (610) may have a rectangular cross-section with four vertices on the outer side of the first body (610), and the first separation portion (630) may be provided with four first separation portions (630) provided at each vertex.

[0148] The process gas supplied to the supply unit (200) through the first distribution plate (600) can be dispersed and flowed inside the reaction chamber (100).

[0149] A portion of the process gas supplied through the supply pipe (210) and the supply port (230) flows into the interior of the first distribution plate (600) through the first inclined portion (620) of the first distribution plate (600), and the remainder is distributed through the first separation space (650).

[0150] In this case, the process gas dispersed through the first separation space (650) is dispersed to the upper, lower, front, and rear of the first distribution plate (600), and then flows to the other side, i.e., the right side, where the exhaust section (300) is located. The process gas flowing to the right side flows more smoothly along the first slope (620).

[0151] The process gas flowing into the first distribution plate (600) is pushed by the process gas flowing in behind it and is distributed to the upper, lower, front, and rear of the first distribution plate (600) and flows to the other side, i.e., the right side, where the exhaust part (300) is located inside the reaction chamber (100).

[0152] As the process gas is dispersed and flows through the first distribution plate (600) in this way, the residence time of the process gas inside the reaction chamber (100) is increased, and as a result, the process gas can flow uniformly throughout the entire area inside the reaction chamber (100).

[0153] To explain in detail, if the first distribution plate (600) is not provided, the process gas flows directly to the exhaust port (300), resulting in a short residence time, which causes many dead zones in which the process gas is insufficient or does not flow within the reaction chamber (100). However, if the first distribution plate (600) is provided, the process gas is distributed near the supply port (230) through the first separation space (650), and at the same time, the residence time is lengthened, thereby minimizing the dead zone.

[0154] As described above, as the dead area of ​​the process gas is minimized and the residence time is prolonged, the first gas (GAS1) can be more uniformly deposited on the surface of the deposition target (20) and the surface of the injection hole (21), and the second gas (GAS2) reacts with the first gas (GAS1) deposited on the surface of the deposition target (20) and the surface of the injection hole (21), so that the film formation of the atomic layer can be more uniformly deposited. Therefore, the atomic layer can be more effectively formed on the surface of the deposition target (20) and the surface of the injection hole (21).

[0155] The second distribution plate (700) is provided on the inside of the exhaust port (330) of the exhaust section (300) to allow the process gas exhausted from the reaction chamber (100) to the exhaust section (300) to be exhausted in a dispersed state.

[0156] The second distribution plate (700) may be configured to include a second body (710) having a second inclined portion (720) formed to be inclined inwardly so as to protrude inwardly, and a second separation portion (730) provided on the outside of the second body (710) so that the second inner wall of the reaction chamber (100) and the second body (710) are connected while a second separation space (750) is formed between the second body (710) and the other inner wall of the reaction chamber (100).

[0157] In FIGS. 3 and 4, the inner wall on the other side of the reaction chamber (100) can be seen as the inner wall on the right side of the reaction chamber (100).

[0158] The second inclined portion (720) forms the upper surface, lower surface, front surface, and rear surface of the second body (710). Accordingly, the upper surface, lower surface, front surface, and rear surface of the second body (710) are all formed to be inclined inward.

[0159] In this case, the upper surface, lower surface, front surface, and rear surface of the first body (610) forming the second slope (720) can all be formed as triangles of the same shape.

[0160] On the inside of the second body (710), a second inclined portion (720), that is, a second tip portion (740) in which the upper surface, lower surface, front surface, and rear surface of the second body (710) are all connected, is formed.

[0161] The second tip (740) is the inner vertex of the second slope (720). That is, it is the vertex that connects the upper surface, lower surface, front surface, and rear surface of the second body (710).

[0162] The second separation unit (730) has one end coupled to the second body (710) and the other end coupled to the inner wall of the other side of the reaction chamber (100).

[0163] The second separation portion (730) has a length in the left-right direction. Therefore, a second separation space (750) is formed between the second body (710) and the other inner wall of the reaction chamber (100) by the second separation portion (730).

[0164] A plurality of such second separation units (730) may be provided.

[0165] As shown in FIGS. 3 and 4, the second body (710) may have a rectangular cross-section with four vertices on the outer side of the second body (710), and the second separation portion (730) may be provided with four second separation portions (730) provided at each vertex.

[0166] When the process gas is exhausted to the exhaust port (330) through the second distribution plate (700), it can be captured and exhausted in a dispersed state.

[0167] To explain in detail, the process gas flowing into the reaction chamber (100) flows toward the exhaust port (330) by the suction force of the exhaust part (300).

[0168] In this case, the process gas is captured from the upper, lower, front, and rear of the second distribution plate (700) in the direction of the second distribution plate (700) and exhausted through the exhaust port (330). Therefore, the residence time of the exhausted process gas inside the reaction chamber (100) is prolonged, and the suction power can be evenly transmitted.

[0169] As the residence time of the process gas increases and the flow of the process gas becomes smooth, the process gas flows uniformly within the reaction chamber (100), and as a result, the process gas can flow to the deposition target (20), i.e., the injection hole (21) of the diffuser (20). Accordingly, a thin film by an atomic layer can be uniformly formed on the surface of the injection hole (21).

[0170] As described above, the atomic layer deposition device (10a) for forming a thin film on a metal part for a process chamber according to the second embodiment of the present invention can uniformly form a thin film formed by an atomic layer on the surface of the deposition target (20) and the surface of the injection hole (21) by implementing the uniforming means (600, 700) as the first distribution plate (600) and / or the second distribution plate (700).

[0171] An atomic layer deposition device (10b) for forming a thin film on a metal part for a process chamber according to the third embodiment of the present invention.

[0172] Hereinafter, with reference to FIG. 5, an atomic layer deposition device (10b) for forming a thin film on a metal part for a process chamber according to a third embodiment of the present invention will be described.

[0173] FIG. 5 is a side cross-sectional view illustrating a state in which a deposition target is stored in an atomic layer deposition device for forming a thin film on a metal part for a process chamber according to a third embodiment of the present invention.

[0174] As illustrated in FIG. 5, an atomic layer deposition device (10b) for forming a thin film on a metal part for a process chamber according to a third embodiment of the present invention may be configured to include a reaction chamber (100), a supply unit (200), an exhaust unit (300), a heating unit (500), and a homogenizing means (400b).

[0175] Additionally, the uniforming means (400b) may be configured to include a support member (400b).

[0176] The atomic layer deposition device (10b) for forming a thin film on a metal part for a process chamber according to the third embodiment of the present invention is configured such that the uniforming means (400b) includes a support member (400b) compared to the atomic layer deposition device (10) for forming a thin film on a metal part for a process chamber according to the first embodiment of the present invention described above.

[0177] The atomic layer deposition apparatus (10b) for forming a thin film on a metal part for a process chamber according to the third embodiment of the present invention is different from the atomic layer deposition apparatus (10) for forming a thin film on a metal part for a process chamber according to the first embodiment of the present invention described above in that the shape of the support part (400b) is different, and the remaining components are the same. Therefore, overlapping descriptions are omitted and replaced with the description of the atomic layer deposition apparatus (10) for forming a thin film on a metal part for a process chamber according to the first embodiment of the present invention described above.

[0178] The support member (400b) supports the deposition object (20) so that the deposition object (20) is accommodated in the reaction chamber (100) while tilted.

[0179] The support member (400b) has a shape that slopes upward from one side to the other.

[0180] The lower surface of the deposition target (20) is supported on the inclined upper surface of the support member (400b). Accordingly, the deposition target (20) is accommodated inside the reaction chamber (100) in an inclined state by the support member (400b).

[0181] In a structure in which the injection holes (21) of the deposition target (20) do not tilt so as to penetrate in the vertical direction, such as the atomic layer deposition device (10) for forming a thin film on a metal part for a process chamber according to the first embodiment of the present invention described above, when there is a flow of process gas from the supply unit (200) to the exhaust unit (300), the process gas flows in opposite directions from the inlet and outlet of the injection holes (21), or the process gas does not flow well into the interior of the injection holes (21). As a result, since the flow of the process gas passing through the injection holes (21) is not well created, the deposition uniformity on the inner wall of the injection holes (21) is reduced.

[0182] On the other hand, in the atomic layer deposition apparatus (10b) for forming a thin film on a metal part for a process chamber according to the third embodiment of the present invention, since the inclined upper surface of the deposition target (20) faces the supply unit (200), the process gas supplied from the supply unit (200) and flowing can be more easily introduced at the inlet of the injection hole (21). That is, as the deposition target (20) is inclined through the support unit (400b), a flow passing through the inner wall of the injection hole (21) is created, thereby improving the uniformity of the deposition.

[0183] As described above, as the deposition target (20) is accommodated in the reaction chamber (100) while being inclined by the support member (400b), the process gas can flow to the surface of the inner wall of the injection hole (21) of the deposition target (20), and through this, the first gas (GAS1) can be deposited more uniformly on the surface of the inner wall of the deposition target (20) and the surface of the injection hole (21), and the second gas (GAS2) can react more easily with the first gas (GAS1) deposited on the surface of the target (20) and the surface of the injection hole (21), so that the atomic layer film can be formed uniformly.

[0184] As the process gas flows smoothly in this way, the process gas flows uniformly within the reaction chamber (100), and as a result, the process gas can flow uniformly throughout the deposition target (20), i.e., the inner wall of the injection hole (21) of the diffuser (20). Accordingly, a thin film by atomic layers can be uniformly formed on the surface of the inner wall of the injection hole (21).

[0185] The atomic layer deposition device (10b) for forming a thin film on a metal part for a process chamber according to the third embodiment can form an atomic layer more uniformly on the surface of the deposition target (20) and the surface of the injection hole (21).

[0186] As described above, the atomic layer deposition device (10b) for forming a thin film on a metal part for a process chamber according to the third embodiment of the present invention can uniformly form a thin film formed by an atomic layer on the surface of the deposition target (20) and the surface of the injection hole (21) by implementing the uniforming means (400b) as a support member (400b).

[0187] An atomic layer deposition device (10c) for forming a thin film on a metal part for a process chamber according to the fourth embodiment of the present invention.

[0188] Hereinafter, with reference to FIG. 6, an atomic layer deposition device (10c) for forming a thin film on a metal part for a process chamber according to a fourth embodiment of the present invention will be described.

[0189] FIG. 6 is a side cross-sectional view illustrating a state in which a deposition target is stored in an atomic layer deposition device for forming a thin film on a metal part for a process chamber according to a fourth embodiment of the present invention.

[0190] As illustrated in FIG. 6, an atomic layer deposition device (10c) for forming a thin film on a metal part for a process chamber according to the fourth embodiment of the present invention may be configured to include a reaction chamber (100), a supply unit (200), an exhaust unit (300), and a uniforming means (400b, 500, 600, 700).

[0191] In addition, the uniforming means (400b, 500, 600, 700) may be configured to include a support member (400b) that supports the deposition object (20) so that the deposition object (20) is accommodated in the reaction chamber (100) while tilted, a heating member (500), a first distribution plate (600), and a second distribution plate (700).

[0192] An atomic layer deposition device (10c) for forming a thin film on a metal part for a process chamber according to a fourth embodiment of the present invention is configured such that the uniforming means (400b, 500, 600, 700) includes a support part (400b), a heating part (500), a first distribution plate (600), and a second distribution plate (700), and thus has a structure in which the first distribution plate (600) and the second distribution plate (700) of the atomic layer deposition device (10a) for forming a thin film on a metal part for a process chamber according to the second embodiment of the present invention and the support part (400b) of the atomic layer deposition device (10b) for forming a thin film on a metal part for a process chamber according to the third embodiment of the present invention are all provided.

[0193] The atomic layer deposition device (10c) for forming a thin film on a metal part for a process chamber according to the fourth embodiment of the present invention has a long residence time of the process gas supplied from the supply unit (200) by the first distribution plate (600), and the process gas is dispersed and flows throughout the entire area inside the reaction chamber (100) without any dead zone, and at the same time, the deposition target (20) is tilted by the support unit (400b) so that the process gas can smoothly flow to the inner wall of the injection hole (21). Accordingly, the first gas (GAS1) can be more uniformly deposited on the surface of the deposition target (20) and the surface of the injection hole (21), and the second gas (GAS2) reacts more uniformly with the first gas (GAS1) deposited on the surface of the deposition target (20) and the surface of the injection hole (21), so that the atomic layer film can be formed uniformly.

[0194] As described above, the atomic layer deposition device (10c) for forming a thin film on a metal part for a process chamber according to the fourth embodiment of the present invention can uniformly form a thin film formed by an atomic layer on the surface of the inner wall of the deposition target (20) and the surface of the injection hole (21) by implementing the uniforming means (400b, 500, 600, 700) as a support (400b), a heating unit (500), a first distribution plate (600), and a second distribution plate (700).

[0195] An atomic layer deposition device (10d) for forming a thin film on a metal part for a process chamber according to the fifth embodiment of the present invention.

[0196] Hereinafter, with reference to FIG. 7, an atomic layer deposition device (10d) for forming a thin film on a metal part for a process chamber according to a fifth embodiment of the present invention will be described.

[0197] FIG. 7 is a side cross-sectional view showing a state in which a deposition target is stored in an atomic layer deposition device for forming a thin film on a metal part for a process chamber according to a fifth embodiment of the present invention.

[0198] As illustrated in FIG. 7, an atomic layer deposition device (10d) for forming a thin film on a metal part for a process chamber according to the fifth embodiment of the present invention may be configured to include a reaction chamber (100), a supply unit (200), an exhaust unit (300), and a uniforming means (400b, 500, 600, 700).

[0199] In addition, the uniforming means (400b, 500, 600, 700) may be configured to include a plurality of support members (400b) that each support a plurality of deposition objects (20) so that the plurality of deposition objects (20) are accommodated in the reaction chamber (100) while tilted, a heating member (500), a first distribution plate (600), and a second distribution plate (700).

[0200] An atomic layer deposition device (10d) for forming a thin film on a metal part for a process chamber according to a fifth embodiment of the present invention is structured such that, compared to the atomic layer deposition device (10c) for forming a thin film on a metal part for a process chamber according to the fourth embodiment of the present invention described above, the uniforming means (400b, 500, 600, 700) comprises a plurality of support parts (400b), a heating part (500), a first distribution plate (600), and a second distribution plate (700), and a plurality of support parts (400b) are provided inside the reaction chamber (100) so that a plurality of deposition targets (20) are accommodated inside the reaction chamber (100).

[0201] A plurality of support members (400b) are arranged parallel to each other in the left and right directions.

[0202] The plurality of support members (400b) have the same number as the plurality of deposition objects (20) housed inside the reaction chamber (100). Accordingly, each of the plurality of deposition objects (20) is supported and fixed to each of the plurality of support members (400b).

[0203] As one example, in FIG. 7, two supports (400b) and two deposition targets (20) are arranged side by side on the left and right inside the reaction chamber (100).

[0204] The plurality of support members (400b) have the same shape, i.e., the same inclination angle. Accordingly, the plurality of deposition objects (20) are stored while being inclined at the same angle.

[0205] As described above, since a plurality of support members (400b) are provided inside the atomic layer deposition device (10d) for forming a thin film on a metal part for a process chamber according to the fifth embodiment of the present invention, a thin film can be formed by depositing atomic layers on the surfaces of a plurality of deposition targets (20) and the surfaces of injection holes (21). Accordingly, the atomic layer deposition efficiency is increased.

[0206] As described above, the atomic layer deposition device (10d) for forming a thin film on a metal part for a process chamber according to the fifth embodiment of the present invention can uniformly form a thin film formed by an atomic layer on the surface of a deposition target (20) and the surface of an injection hole (21) by implementing the uniforming means (400b, 500, 600, 700) as a plurality of support parts (400b), a heating part (500), a first injection plate (600), and a second injection plate (700).

[0207] An atomic layer deposition device (10e) for forming a thin film on a metal part for a process chamber according to the sixth embodiment of the present invention.

[0208] Hereinafter, with reference to FIG. 8, an atomic layer deposition device (10e) for forming a thin film on a metal part for a process chamber according to a sixth embodiment of the present invention will be described.

[0209] FIG. 8 is a side cross-sectional view showing a state in which a deposition target is stored in an atomic layer deposition device for forming a thin film on a metal part for a process chamber according to a sixth embodiment of the present invention.

[0210] As illustrated in FIG. 8, an atomic layer deposition device (10e) for forming a thin film on a metal part for a process chamber according to a sixth embodiment of the present invention includes a reaction chamber (100), a supply unit (200e), an exhaust unit (300e), a support unit (400b) for supporting a deposition target (20) so that the deposition target (20) is accommodated in the reaction chamber (100) while tilted, a first distribution plate (600), a second distribution plate (700), and a heating unit (500), and the supply port (230e) of the supply unit (200e) and the exhaust port (330e) of the exhaust unit (300e) are not positioned on the same horizontal line.

[0211] The atomic layer deposition device (10e) for forming a thin film on a metal part for a process chamber according to the sixth embodiment of the present invention is the same as the atomic layer deposition device (10c) for forming a thin film on a metal part for a process chamber according to the fourth embodiment of the present invention described above, except for the positions of the supply port (230e) and the exhaust port (330e), in which the remaining components are the same. Therefore, redundant descriptions are omitted and replaced with a description of the atomic layer deposition device (10c) for forming a thin film on a metal part for a process chamber according to the fourth embodiment of the present invention described above.

[0212] The supply unit (200e) of the atomic layer deposition device (10e) for forming a thin film on a metal part for a process chamber according to the sixth embodiment of the present invention is located on one side of the reaction chamber (100), that is, on the left side of the reaction chamber (100), and the exhaust unit (300e) is located on the other side of the reaction chamber (100), that is, on the right side of the reaction chamber (100).

[0213] The supply unit (200e) may be configured to include a supply pipe (210e) and a supply port (230e).

[0214] A supply port (230e) communicating with the supply pipe (210e) is formed on one inner wall of the reaction chamber (100), i.e., on the left inner wall of the reaction chamber (100), thereby connecting the reaction chamber (100) and the supply pipe (210e).

[0215] The exhaust section (300e) may be configured to include an exhaust pipe (310e) and an exhaust port (330e).

[0216] An exhaust port (330e) communicating with the exhaust pipe (310e) is formed on the other inner wall of the reaction chamber (100), i.e., on the right inner wall of the reaction chamber (100), thereby connecting the reaction chamber (100) and the exhaust pipe (310e).

[0217] The supply port (230e) and the exhaust port (330e) are not located at corresponding positions. That is, the supply port (230e) and the exhaust port (330e) are not located on the same horizontal line, and the center line of the supply port (230e) and the center line of the exhaust port (330e) are not the same.

[0218] As described above, since the positions of the supply port (230e) and the exhaust port (330e) are different, the process gas supplied from the supply port (230e) flows more completely within the reaction chamber (100) before reaching the exhaust port (330e). Therefore, there is an effect of minimizing the dead area in the reaction chamber (100).

[0219] As the dead area in the reaction chamber (100) is minimized, the first gas (GAS1) can be deposited more uniformly on the surface of the deposition target (20) and the surface of the injection hole (21).

[0220] In addition, the second gas (GAS2) reacts more uniformly with the first gas (GAS1) deposited on the surface of the deposition target (20) and the surface of the injection hole (21), so that the atomic layer can be easily formed.

[0221] As shown in Fig. 8, it is preferable that the supply port (230e) be positioned above the exhaust port (330e) and that the deposition target (20) be positioned so that the injection hole (21) is inclined toward the supply port (230e).

[0222] As described above, since the supply port (230e) is positioned above the exhaust port (330e) and the injection hole (21) of the deposition target (20) is positioned toward the supply port (230e), the first gas (GAS1) and the second gas (GAS2) supplied from the supply port (230e) can flow more easily into the injection hole (21). Accordingly, the atomic layer film can be deposited more uniformly.

[0223] In Fig. 8, the supply port (230e) is shown as being located above the exhaust port (330e), but the supply port (230e) may also be located below the exhaust port (330e).

[0224] While the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely exemplary, and those skilled in the art will understand that various modifications and equivalent embodiments are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the appended claims.

[0225] [Explanation of symbols]

[0226] 10, 10a, 10b, 10c, 10d: Atomic layer deposition device for forming a thin film on a metal part for a process chamber.

[0227] 20: Deposition target

[0228] 21: Injection hole

[0229] 100: Reaction Chamber

[0230] 111: First fixed plate

[0231] 112: Second fixed plate

[0232] 131: First shaft

[0233] 132: Second shaft

[0234] 150: Flange

[0235] 160: Curved surface

[0236] 200, 200e: Supply Department

[0237] 210, 210e: Supply pipe

[0238] 230, 230e: Supply port

[0239] 300, 300e: Exhaust

[0240] 310, 310e: Exhaust pipe

[0241] 330, 330e: exhaust

[0242] 400, 400b: Support

[0243] 500: Heating unit

[0244] 600: First Distributed Plate

[0245] 610: First body

[0246] 620: 1st Slope Division

[0247] 630: First detachment

[0248] 640: First cutting edge

[0249] 650: First separation space

[0250] 700: Second Distributed Plate

[0251] 710: Second body

[0252] 720: 2nd Slope Division

[0253] 730: Second Separation Section

[0254] 740: Second Advanced Section

[0255] 750: Second separation space

Claims

1. A reaction chamber in which the deposition target is stored inside; A supply unit provided on one side of the reaction chamber to supply process gas into the interior of the reaction chamber; An exhaust unit provided on the other side of the reaction chamber to exhaust process gas supplied into the reaction chamber; and An atomic layer deposition apparatus for forming a thin film on a metal part for a process chamber, comprising a homogenizing means for uniformly flowing the process gas inside the reaction chamber to uniformly form a thin film on the surface of the deposition target.

2. In paragraph 1, The above-mentioned uniformity means is, An atomic layer deposition device for forming a thin film on a metal part for a process chamber, the device including a heating unit for heating the reaction chamber.

3. In paragraph 1, The above-mentioned uniformity means is, An atomic layer deposition device for forming a thin film on a metal part for a process chamber, comprising: a first distribution plate provided on the inside of a supply port of the supply unit to distribute a process gas supplied to the reaction chamber; 4. In paragraph 3, The above first distribution plate is, A first body having a first inclined portion formed to be inclined inwardly so as to protrude inwardly; and An atomic layer deposition apparatus for forming a thin film on a metal part for a process chamber, comprising: a first separation portion provided on the outside of the first body so that one inner wall of the reaction chamber and the first body are connected while a first separation space is formed between one inner wall of the reaction chamber and the first body.

5. In paragraph 1, The above-mentioned uniformity means is, A second distribution plate is provided on the inside of the exhaust port of the above exhaust section to allow the process gas exhausted from the reaction chamber to the exhaust port to be exhausted in a dispersed state; The above second distribution plate is, A second body having a second inclined portion formed to be inclined inwardly so as to protrude inwardly; and An atomic layer deposition apparatus for forming a thin film on a metal part for a process chamber, comprising: a second separation portion provided on the outside of the second body so that the other inner wall of the reaction chamber and the second body are connected while a second separation space is formed between the other inner wall of the reaction chamber and the second body.

6. In paragraph 1, The above-mentioned uniformity means is, An atomic layer deposition apparatus for forming a thin film on a metal part for a process chamber, the apparatus including a support member that supports the deposition object so that the deposition object is accommodated in the reaction chamber while being inclined.

7. In paragraph 6, An atomic layer deposition device for forming a thin film on a metal part for a process chamber, wherein a plurality of deposition objects are stored in the reaction chamber, and a plurality of support parts are provided in the same number as the plurality of deposition objects, such that the plurality of deposition objects are each supported on the plurality of support parts.

8. In paragraph 1, The above supply unit, A supply pipe through which the above process gas flows; and A supply port provided on one side of the reaction chamber and communicating with the supply pipe; The above exhaust part is, An exhaust pipe through which the above process gas flows; and An exhaust port provided on the other side of the reaction chamber and communicating with the exhaust pipe; An atomic layer deposition device for forming a thin film on a metal part for a process chamber, wherein the supply port and the exhaust port are not located on the same horizontal line.

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