Treatment device and method

Abstract

A high-frequency emission means (101) emits high-frequency waves to a liquid (122) contained in a vessel (121). A supply means (102) supplies a raw material to the liquid (122). A frequency determination means (103) determines the frequency of the high-frequency waves emitted by the high-frequency emission means (101). A control means (104) controls the supply of the raw material by the supply means (102) in accordance with changes in a reference value based on a maximum amplitude and a minimum amplitude for every period of the frequency determined by the frequency determination means (103).

Description

Processing device and method

[0001] The present invention relates to a processing apparatus and method.

[0002] For example, various crystal growth devices are being used and studied. In Patent Document 1, a circuit element is controlled to keep the heating oscillation frequency constant, and the diameter of the growing crystal is controlled by adjusting the crystal movement speed.

[0003] Special Publication No. 60-24077

[0004] However, the above-mentioned conventional techniques have the problem that they are unable to grow crystals with uniform and high-quality crystallinity because the uniformity of the composition, etc., of the melt into which the raw materials are supplied is not maintained.

[0005] The present invention has been made to solve the above problems, and has as its object to obtain uniformity in the liquid into which the raw material is supplied.

[0006] The processing apparatus according to the present invention comprises a high-frequency irradiation means for irradiating a liquid contained in a container with high-frequency waves, a supply means for supplying raw material to the liquid, a frequency measurement means for measuring the frequency of the high-frequency waves irradiated by the high-frequency irradiation means, and a control means for controlling the supply of raw material by the supply means in accordance with the rate of change of a reference value based on the maximum and minimum amplitude values ​​per cycle of the frequency measured by the frequency measurement means.

[0007] In one example configuration of the above processing device, the supply means supplies the raw material by either dripping the raw material, ejecting the raw material, or spraying the raw material, and the control means controls either the amount of raw material dripped, the amount of raw material ejected, or the amount of raw material sprayed.

[0008] In one example configuration of the above processing device, the supply means supplies the raw material by either dripping the raw material, ejecting the raw material, or intermittently supplying the raw material, and the control means controls the interval between either the dripping of the raw material, the ejection of the raw material, or the intermittent supply of the raw material.

[0009] In one example of the configuration of the processing device, the control means controls any one of the amount of raw material dripped, the amount of raw material discharged, and the amount of raw material sprayed.

[0010] In one example of the configuration of the processing apparatus, the control means controls the intervals between dripping of the raw material, discharging of the raw material, and intermittent supply of the raw material.

[0011] In one example of the configuration of the processing apparatus, the high frequency irradiation means heats the liquid by high frequency induction heating.

[0012] In one configuration example of the processing device, the processing device further comprises a stopping means for stopping the operation of the processing device in accordance with the fluctuation range of the rate of change of the reference value.

[0013] In addition, the processing method according to the present invention includes a high-frequency irradiation step of irradiating a liquid contained in a container with high-frequency waves, a supply step of supplying raw material to the liquid, a frequency measurement step of measuring the frequency of the high-frequency waves irradiated in the high-frequency irradiation step, and a control step of controlling the supply of raw material in the supply step in accordance with the rate of change of a reference value based on the maximum amplitude and minimum amplitude per cycle at the frequency measured in the frequency measurement step.

[0014] In one configuration example of the above processing method, the supply step supplies the raw material by either dripping the raw material, ejecting the raw material, or spraying the raw material, and the control step controls either the amount of raw material dripped, the amount of raw material ejected, or the amount of raw material sprayed.

[0015] In one configuration example of the above processing method, the supply step supplies the raw material by any one of dripping the raw material, ejecting the raw material, and intermittently supplying the raw material, and the control step controls the interval between any one of dripping the raw material, ejecting the raw material, and intermittently supplying the raw material.

[0016] In one configuration example of the above processing method, the high frequency irradiation step involves high frequency induction heating of the liquid.

[0017] In one configuration example of the processing method, there is further provided a stopping step of stopping operation of the device itself in accordance with the fluctuation range of the rate of change of the reference value.

[0018] As described above, according to the present invention, the supply of raw material is controlled by the frequency of the high frequency waves irradiated onto the liquid contained in the container, so that uniformity in the liquid into which the raw material is supplied can be obtained.

[0019] FIG. 1 is a diagram showing the configuration of a processing apparatus according to an embodiment of the present invention. FIG. 2 is a diagram showing a more detailed configuration of a processing apparatus according to an embodiment of the present invention. FIG. 3 is a characteristic diagram showing the relationship between oscillator frequency and time when a reference value based on the maximum and minimum amplitude values ​​per cycle of the frequency changes during raw material supply during crystal growth. FIG. 4 is a flowchart showing an example of a work flow adjusted according to the rate of change of the reference value based on the maximum and minimum amplitude values ​​per cycle of the frequency shown in FIG. 3. FIG. 5 is a characteristic diagram showing the relationship between oscillator frequency and time when a reference value based on the maximum and minimum amplitude values ​​per cycle of the frequency changes during raw material supply during crystal growth. FIG. 6 is a characteristic diagram showing the relationship between the concentration of a solute metal element in a fabricated alloy wire and the crystallization rate. FIG. 7 is a diagram showing the hardware configuration of a portion of a processing apparatus according to an embodiment of the present invention.

[0020] A processing apparatus according to an embodiment of the present invention will now be described with reference to Fig. 1. This processing apparatus comprises high frequency irradiation means 101, supply means 102, frequency measurement means 103, and control means 104.

[0021] The high frequency irradiation means 101 irradiates high frequency waves to the liquid 122 contained in the container 121. For example, the high frequency irradiation means 101 may be configured to perform high frequency induction heating on the liquid 122. In this case, the processing apparatus may be a crystal growth apparatus in which the container 121 is a crucible and the liquid 122 is a melt.

[0022] The supplying means 102 supplies the raw material to the liquid 122. For example, the supplying means 102 can supply the raw material by dropping the raw material, ejecting the raw material, spraying the raw material, or intermittently supplying the raw material. The supplying means 102 can be a well-known raw material supplying device used for crystal growth.

[0023] The frequency measuring means 103 measures the frequency of the radio frequency radiated by the radio frequency radiating means 101. The frequency measuring means 103 can be configured from a measuring device such as a well-known frequency counter.

[0024] The control means 104 controls the supply of raw material by the supply means 102 in accordance with the rate of change of a reference value based on the maximum and minimum amplitude values ​​per cycle of the frequency measured by the frequency measurement means 103. For example, the control means 104 can control any of the amount of raw material dripped, the amount of raw material discharged, and the amount of raw material sprayed. The control means 104 can also control any of the intervals between the dripping of raw material, the discharge of raw material, and the intermittent supply of raw material.

[0025] The reference value is not particularly limited as long as it is a value based on the maximum and minimum amplitude values ​​per cycle of the frequency. Suitable examples of the reference value include the arithmetic mean or geometric mean value of the maximum and minimum amplitude values. When the supplying means 102 drips, ejects, or sprays raw material, or intermittently supplies raw material, spike-like peaks appear at the maximum and minimum amplitude values ​​in the measured frequency waveform. These spike-like peaks make it easy to determine the maximum and minimum amplitude values. The control means 104 can perform control using the spike-like signal described above. For example, the control means 104 can control the supply of raw material by the supplying means 102 using conventional control (such as PID control).

[0026] The processing device may further include a stop means (not shown) for stopping the operation of each means (its own device) of the processing device depending on the fluctuation range of the reference value change rate. For example, various determinations can be made based on whether the reference value change rate based on the maximum and minimum amplitude values ​​per cycle at the measured frequency falls within a certain range, including whether or not it exists. For example, a normal reference value change rate can be determined in advance, and the range of the determined normal reference value change rate can be set as the certain range. "Per cycle" refers to a fixed time interval (e.g., every second to every hour) of the frequency corresponding to the repetition unit of the waveform of the frequency including the maximum and minimum amplitude values. Furthermore, in the present invention, it is preferable that the reference value change rate be based on the fluctuation of the reference value or its fluctuation rate. Such a preferred range allows for more efficient industrial supply of raw materials.

[0027] The shape of the raw material is not particularly limited as long as it does not impede the objectives of the present invention. Examples of the shape of the raw material include droplets, powder, and granules, but the particle size is not particularly limited. The raw material is not particularly limited and may be, for example, an inorganic material or an organic material. For example, in crystal growth, it is preferable to use crystal rods as the raw material, and the supply means can supply droplets obtained by dissolving the crystal rods. This preferred form is preferable because it can more easily deal with spike frequencies that may occur due to the supply of raw material.

[0028] High-frequency induction heating is a heating method that uses high-frequency waves to pass a current through an object based on the principle of electromagnetic induction to generate heat. For example, a frequency of approximately 3 kHz to 300 MHz can be used. The high-frequency irradiation means for performing high-frequency induction heating is not particularly limited as long as it does not impede the objectives of the present invention, and can include a heating coil, etc. In this case, by adding control to move the position of the heating coil, it becomes possible to more easily control the state of the resulting crystal.

[0029] The processing apparatus can be applied to, for example, a crystal growth apparatus. The crystal growth apparatus can be, for example, a μ-PD apparatus. Furthermore, the processing apparatus of the present invention can be suitably applied not only to crystal growth apparatuses but also to stable supply, preferably continuous supply, of raw materials that are dropped, discharged, sprayed, or intermittently added. Applications of the processing apparatus other than crystal growth apparatuses include, for example, mixing apparatuses, film-forming apparatuses, chemical reaction apparatuses, cooking apparatuses, coating apparatuses, physical reaction apparatuses, and analytical apparatuses.

[0030] The processing method according to the embodiment includes a high frequency irradiation step in which high frequency irradiation means irradiates high frequency waves onto liquid 122 contained in container 121; a supply step in which supply means 102 supplies raw material to liquid 122; a frequency measurement step in which frequency measurement means 103 measures the frequency of the high frequency waves irradiated in the high frequency irradiation step; and a control step in which control means 104 controls the supply of raw material in the supply step in accordance with the rate of change of a reference value based on the maximum amplitude and minimum amplitude values ​​per cycle at the frequency measured in the frequency measurement step.

[0031] The supplying step can supply the raw material by any one of dripping, discharging, spraying, or intermittently discharging the raw material. The control step can control any one of the amount of raw material dripped, the amount of raw material discharged, or the amount of raw material sprayed. The control step can also control any one interval between dripping, discharging, or intermittent supply of raw material.

[0032] The high-frequency irradiation step may be a step of high-frequency induction heating the liquid. The method may further include a step of stopping the operation of the treatment device (the device itself) depending on the fluctuation range of the rate of change of the reference value.

[0033] The present invention will be described in more detail below using examples. The following describes the case where the processing apparatus is applied to a crystal growth apparatus (μ-PD apparatus) shown in FIG. 2. This apparatus includes a high-frequency induction heating coil 222 as a high-frequency irradiation means, a reaction vessel 223, and a frequency measurement device 225. Using this apparatus, a crystal rod (supply rod) 220 is heated using the high-frequency induction heating coil 222 to generate droplets 220a, which are then supplied to a melt 220b contained in a reaction vessel 223.

[0034] In this apparatus, the melt 220b decreases as the wire 224 grows, causing a change in the frequency irradiated onto the melt 220b from the high-frequency induction heating coil 222. This change is measured by a frequency measuring device 225, and a controller (control means, not shown) determines the rate of change of a reference value based on the maximum and minimum amplitude values ​​per cycle at the measured frequency, and controls the supply speed of the crystal rod 220 so that the rate of change falls within a certain range. By controlling the supply speed of the crystal rod 220, the state of the droplet 220a can be controlled.

[0035] 3 shows the relationship between the oscillator frequency and time when the reference value based on the maximum and minimum amplitude values ​​per cycle of the frequency is changed during the supply of raw material during crystal growth. Note that, although an example is given in which the geometric mean value is used as the reference value, the present invention is not limited to this specific example.

[0036] In Figure 3, as crystal growth (growth of wire 224) progresses and the rate of change of the geometric mean value 3A based on the maximum amplitude 1A and minimum amplitude 2A increases, the supply rate of the crystal rod 220 is adjusted, and the supply rate is increased at the geometric mean value 3B based on the maximum amplitude 1B and minimum amplitude 2B to return to normal, and the rate of change of the reference value based on the maximum amplitude and minimum amplitude per cycle in the frequency is returned to normal. However, if the rate of change of the reference value for the geometric mean value 3C based on the maximum amplitude 1C and minimum amplitude 2C continues to be abnormal even after the supply rate at the geometric mean value 3B is increased, the device can be stopped using a stop function (not shown). This configuration allows for easier and more stable supply of raw material to the solution.

[0037] 4 is a flowchart showing an example of a work flow for adjusting the work amount in accordance with the rate of change of a reference value based on the maximum and minimum amplitude values ​​per frequency cycle in FIG. 3. For example, if the rate of change of the geometric mean value 3A based on the maximum and minimum amplitude values ​​1A and 2A increases, it is determined that the continuous supply is abnormal (a decrease in the amount of work) (step S101). The supply amount is increased, for example, based on the geometric mean value 3B, to return to normal continuous supply (step S102), and the rate of change of the reference value is returned to a normal state (step S103). If the rate of change of the geometric mean value 3C, for example, is still abnormal even after the supply amount is increased, the device is stopped (step S104).

[0038] Next, the evaluation of the actually produced crystals (wires) will be described.

[0039] [Production of Alloy Wire] Using the apparatus described with reference to Figure 2, the micro-pulling down method (μ-PD method) was used to produce alloy wire (example sample) by continuously supplying raw material while controlling the supply rate of raw material according to the rate of change of a reference value 3A based on the maximum amplitude 1A and minimum amplitude 2A per cycle in the frequency, as shown in Figure 5. As a result, a wire with excellent functionality and physical properties was produced. As a comparative example, a commercially available conventional manufacturing apparatus (without a frequency measuring device) was used (comparison sample).

[0040] When produced using the apparatus described with reference to Figure 2, the supply rate was stable. Furthermore, the alloy wires of the example samples obtained had good crystallinity. In contrast, the alloy wires of the comparative samples did not have a constant concentration of solute metal elements, and only poor-quality alloy wires could be produced. Furthermore, the alloy wires obtained also deteriorated quickly.

[0041] Furthermore, as a result of comparing the example samples with the comparative samples, as shown in FIG. 6, variations were observed in the concentration of solute metal elements (composition of alloy elements) in the comparative samples, but no variations were observed in the example samples.

[0042] As shown in FIG. 7, each of the control means 104 and the stop means of the processing device according to the above-described embodiment may be a computer device including a CPU (Central Processing Unit) 301, a main memory device 302, an external memory device 303, a network connection device 304, etc., and the above-described functions (processing methods) may be realized by the CPU 301 operating (executing) a program loaded in the main memory device 302. The above-described program is a program for causing a computer to execute the method described in the above-described embodiment. The network connection device 304 is connected to a network 305. The functions may also be distributed among multiple computer devices.

[0043] As described above, according to the present invention, the supply of raw material is controlled by the frequency of the high frequency waves irradiated onto the liquid contained in the container, thereby making it possible to obtain uniformity in the liquid into which the raw material is being supplied.

[0044] For example, in conventional crystal growth, the heating frequency of high-frequency induction heating is controlled to be constant. However, during this type of crystal growth process, the frequency emitted from the coil in the high-frequency induction heating fluctuates, and the inventors have found through extensive research that this fluctuation causes changes in crystallinity. In particular, when raw material is supplied intermittently to the melt, the transmission frequency changes in a spike-like manner depending on the supply state, and the composition of the melt also changes, resulting in poor crystallinity of the resulting crystal, and the desired crystallinity cannot be achieved.

[0045] In response to this, the inventors have discovered that the raw material can be stably supplied to the liquid even when it is added by dripping, ejection, spraying or intermittent addition, which is beneficial for crystal growth, and have found that such a processing device and processing method can solve all of the above-mentioned conventional problems at once.

[0046] Some or all of the above-described embodiments may also be described as, but are not limited to, the following supplementary notes.

[0047] [Supplementary Note 1] A processing apparatus comprising: high frequency irradiation means for irradiating a liquid contained in a container with high frequency; supply means for supplying raw material to the liquid; frequency measurement means for measuring the frequency of the high frequency irradiated by the high frequency irradiation means; and control means for controlling the supply of raw material by the supply means in accordance with a rate of change of a reference value based on a maximum amplitude value and a minimum amplitude value per cycle of the frequency measured by the frequency measurement means.

[0048] [Supplementary Note 2] In the processing device according to Supplementary Note 1, the supplying means supplies the raw material by any one of dripping the raw material, ejecting the raw material, spraying the raw material, and intermittently supplying the raw material.

[0049] [Supplementary Note 3] In the processing apparatus according to Supplementary Note 2, the control means controls any one of the amount of the raw material dropped, the amount of the raw material discharged, and the amount of the raw material sprayed.

[0050] [Supplementary Note 4] In the processing apparatus according to Supplementary Note 2, the control means controls the intervals of any of the dripping of the raw material, the ejection of the raw material, and the intermittent supply of the raw material.

[0051] [Supplementary Note 5] In the processing apparatus according to any one of Supplementary Notes 1 to 3, the high-frequency irradiation means is a processing apparatus that heats the liquid by high-frequency induction heating.

[0052] [Supplementary Note 6] The processing device according to any one of Supplementary Notes 1 to 5, further comprising a stopping means for stopping operation of the processing device itself in accordance with a fluctuation range of the rate of change of the reference value.

[0053] [Supplementary Note 7] A processing method comprising: a high-frequency irradiation step of irradiating a liquid contained in a container with high-frequency waves; a supply step of supplying a raw material to the liquid; a frequency measurement step of measuring the frequency of the high-frequency waves irradiated in the high-frequency irradiation step; and a control step of controlling the supply of the raw material in the supply step in accordance with a rate of change of a reference value based on a maximum amplitude value and a minimum amplitude value per cycle at the frequency measured in the frequency measurement step.

[0054] [Supplementary Note 8] In the processing method according to Supplementary Note 7, the supplying step supplies the raw material by any one of dripping the raw material, ejecting the raw material, spraying the raw material, and intermittently ejecting the raw material.

[0055] [Supplementary Note 9] In the processing method according to Supplementary Note 8, the control step controls any one of the amount of the raw material dripped, the amount of the raw material discharged, and the amount of the raw material sprayed.

[0056] [Supplementary Note 10] In the processing method according to Supplementary Note 8, the control step controls the interval of any one of the dripping of the raw material, the ejection of the raw material, and the intermittent supply of the raw material.

[0057] [Supplementary Note 11] In the processing method according to any one of Supplementary Notes 7 to 10, the high-frequency irradiation step is a processing method in which the liquid is subjected to high-frequency induction heating.

[0058] [Supplementary Note 12] The processing method according to any one of Supplementary Notes 7 to 11, further comprising a stopping step of stopping operation of the device itself depending on a fluctuation range of the rate of change of the reference value.

[0059] It should be noted that the present invention is not limited to the embodiments described above, and it is clear that many modifications and combinations can be made by a person having ordinary knowledge in the art within the technical concept of the present invention.

[0060] 101...high frequency irradiation means, 102...supply means, 103...frequency measurement means, 104...control means, 121...container, 122...liquid.

Claims

1. A processing apparatus comprising: high frequency irradiation means for irradiating a liquid contained in a container with high frequency waves; supply means for supplying raw material to said liquid; frequency measurement means for measuring the frequency of the high frequency waves irradiated by said high frequency irradiation means; and control means for controlling the supply of raw material by said supply means in accordance with the rate of change of a reference value based on the maximum amplitude and minimum amplitude values ​​per cycle of the frequency measured by said frequency measurement means.

2. A processing apparatus according to claim 1, wherein said supplying means supplies said raw material by any one of dripping, ejecting, scattering, and intermittently supplying said raw material.

3. A processing apparatus according to claim 2, wherein said control means controls any one of the amount of said raw material dripped, the amount of said raw material discharged, and the amount of said raw material sprayed.

4. A processing apparatus according to claim 2, wherein said control means controls the intervals of any of the dripping of said raw material, the discharge of said raw material, and the intermittent supply of said raw material.

5. A processing apparatus according to claim 1, wherein said high frequency irradiation means heats said liquid by high frequency induction heating.

6. The processing device according to any one of claims 1 to 4, further comprising a stop means for stopping operation of the processing device itself in accordance with the fluctuation range of the rate of change of the reference value.

7. A processing method comprising: a high frequency irradiation step of irradiating a liquid contained in a container with high frequency waves; a supply step of supplying raw material to the liquid; a frequency measurement step of measuring the frequency of the high frequency waves irradiated in the high frequency irradiation step; and a control step of controlling the supply of raw material in the supply step in accordance with a rate of change of a reference value based on a maximum amplitude value and a minimum amplitude value per cycle at the frequency measured in the frequency measurement step.

8. A processing method according to claim 7, wherein the supplying step supplies the raw material by any one of dripping the raw material, ejecting the raw material, scattering the raw material, and ejecting the raw material intermittently.

9. A processing method according to claim 8, wherein said control step controls any one of an amount of said raw material dripped, an amount of said raw material discharged, and an amount of said raw material sprayed.

10. A processing method according to claim 8, wherein said control step controls the intervals of any of the dripping of said raw material, the ejection of said raw material, and the intermittent supply of said raw material.

11. A processing method according to claim 7, wherein said high-frequency irradiation step heats said liquid by high-frequency induction heating.

12. The processing method according to any one of claims 7 to 11, further comprising a stopping step of stopping operation of the device itself depending on the fluctuation range of the rate of change of the reference value.

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