Resin composition, cured product, laminate, method for producing cured product, method for producing laminate, method for producing semiconductor device, semiconductor device, and method for producing resin

Abstract

Provided are: a resin composition containing a resin having at least one repeating unit selected from the group consisting of repeating units represented by formula (1-2), repeating units represented by formula (1-3), and repeating units represented by formula (1-4), a polymerization initiator, and a solvent, in which the imidization rate of the resin is 40-85%; a cured product obtained by curing the composition and a method for producing the same; a laminate containing the cured product and a method for producing the same; a semiconductor device and a method for producing the same; and a method for producing a resin.

Description

Resin composition, cured product, laminate, method for manufacturing cured product, method for manufacturing laminate, method for manufacturing semiconductor device, semiconductor device, and method for manufacturing resin

[0001] The present invention relates to a resin composition, a cured product, a laminate, a method for producing a cured product, a method for producing a laminate, a method for producing a semiconductor device, a semiconductor device, and a method for producing a resin.

[0002] Nowadays, resin materials produced from resin compositions containing resins are being utilized in various fields. For example, resins such as polyimide are used in a variety of applications due to their excellent heat resistance and insulating properties. Examples of such applications include, but are not limited to, insulating films, encapsulants, and protective films for semiconductor devices used for packaging. They are also used as base films and coverlays for flexible substrates.

[0003] For example, in the above-mentioned applications, resins such as polyimides are used in the form of resin compositions containing resins such as polyimide precursors. Such resin compositions can be applied to a substrate, for example, by coating to form a photosensitive film, and then, as necessary, exposed to light, developed, heated, or the like, to form a cured product on the substrate. Because the resin compositions can be applied by known coating methods, for example, they have excellent manufacturing adaptability, such as a high degree of design freedom in terms of the shape, size, and application position of the applied resin composition. In addition to the high performance of polyimides, the industrial application of the above-mentioned resin compositions is expected to expand in popularity due to their excellent manufacturing adaptability.

[0004] For example, Patent Document 1 discloses a photosensitive resin composition containing 100 parts by mass of a polyimide precursor having a specific structure; (B) 0.5 to 10 parts by mass of a photosensitizer; and (D) 100 to 300 parts by mass of a solvent. The photosensitive resin layer obtained by removing the solvent from the photosensitive resin composition before exposure has a peak at 1380 cm in an infrared absorption spectrum measured by an ATR (Attenuated Total Reflection) method. －１ The peak intensity near 1500 cm －１The photosensitive resin composition described herein has an imidization rate b, which is the value obtained by dividing the imidization index of the photosensitive resin layer, obtained by dividing the intensity of a peak near the photosensitive resin layer, by the imidization index of a cured film obtained by heating and curing the photosensitive resin composition at 350°C, of ​​15% to 50%, and an imide group concentration a, which is the proportion of imide groups to the molecular weight of repeating units containing a structure derived from tetracarboxylic acid and diamine, in the polyimide of the polyimide cured film, of 12 wt % to 30 wt %.

[0005] Japanese Patent Application Laid-Open No. 2022-054416

[0006] When a cured product formed from a resin composition containing a polyimide or a precursor thereof is used as an insulating member in a wiring pattern, it is necessary to suppress unevenness during application of the resin composition and shrinkage during curing in order to achieve the desired shape, dimensions, etc. of the cured product.

[0007] The present invention aims to provide a resin composition that can produce a cured product that is suppressed in unevenness during application and shrinkage during curing, a cured product obtained by curing the resin composition, a laminate including the cured product, a method for producing the cured product, a method for producing the laminate, a method for producing the cured product, and a semiconductor device including the cured product. Another object of the present invention is to provide a method for synthesizing a novel resin.

[0008] Representative embodiments of the present invention are shown below: <1> A resin composition comprising a resin having at least one repeating unit selected from the group consisting of a repeating unit represented by the following formula (1-2), a repeating unit represented by the following formula (1-3), and a repeating unit represented by the following formula (1-4), a polymerization initiator, and a solvent, wherein the resin has an imidization rate of 40 to 85%. In formula (1-2), A ２ is -O- or -NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ２ is a hydrogen atom or a monovalent organic group, and X ２ is a tetravalent organic group, and Y ２ is a divalent organic group. ３is -O- or -NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ３ is a hydrogen atom or a monovalent organic group, and X ３ is a tetravalent organic group, and Y ３ is a divalent organic group. ４１ and A ４２ are each independently —O— or —NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ４１ and R ４２ are each independently a hydrogen atom or a monovalent organic group, and X ４ is a tetravalent organic group, and Y ４ <2> The resin composition according to <1>, wherein the resin contains at least one repeating unit selected from the group consisting of the following repeating units A-2, A-3, and A-4: Repeating unit A-2: A repeating unit represented by the above formula (1-2), wherein X ２ Repeating unit A-3: A repeating unit represented by the above formula (1-3), wherein X ３ Repeating unit A-4: A repeating unit represented by the above formula (1-4), wherein X ４ A repeating unit having any of the structures represented by the following formulas (2a) to (2g): In formulas (2a) to (2g), L １ and L ２ are each independently a divalent group that is not conjugated with the benzene ring to which they are bonded, or a single bond, and *1 to *4 respectively represent a bonding site with the carbonyl group shown in formula (1-2), formula (1-3), or formula (1-4), and hydrogen atoms in these structures may be substituted with a substituent. <3> The resin composition according to <2>, wherein the resin further contains at least one repeating unit selected from the group consisting of the following repeating unit B-2, repeating unit B-3, and repeating unit B-4. Repeating unit B-2: A repeating unit represented by formula (1-2), wherein X ２Repeating unit B-3: a repeating unit represented by the above formula (1-3), wherein X ３ Repeating unit B-4: A repeating unit represented by the above formula (1-4), wherein X ４ a repeating unit containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulas (V-1) to (V-10): In formula (V-2), R Ｘ１ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group. Ｘ２ and R Ｘ３ each independently represents a hydrogen atom or a substituent, R Ｘ２ and R Ｘ３ may be bonded to form a ring structure. In formula (V-4), n1 represents an integer of 1 or more. In formula (V-8), R Ｘ５ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group. <4> The resin is a repeating unit represented by the formula (1-2), in which R ２ is a monovalent organic group having an ethylenically unsaturated bond, a repeating unit represented by the above formula (1-3), ３ is a monovalent organic group having an ethylenically unsaturated bond, and a repeating unit represented by the above formula (1-4), wherein R ４１ and R ４２ The resin composition according to any one of <1> to <3>, wherein the resin contains at least one repeating unit selected from the group consisting of repeating units in which at least one of the repeating units is a monovalent organic group having an ethylenically unsaturated bond. <5> The resin contains a repeating unit represented by formula (1-2) above, wherein Y ２ a repeating unit having a structure represented by the following formula (C-1) to formula (C-5), a repeating unit having a structure represented by the above formula (1-3), ３ A repeating unit having a structure containing a structure represented by the following formula (C-1) to formula (C-5), and a repeating unit having the above formula (1-4), wherein Y４ The resin composition according to any one of <1> to <4>, wherein the repeating unit is a repeating unit having a structure including a structure represented by the following formulas (C-1) to (C-5): In formula (C-1), R １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, n2 represents an integer of 0 to 3, and * represents a bonding site with another structure. １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, n2 represents an integer of 0 to 3, R ２ Each independently represents an alkyl group or a fluoroalkyl group, and * represents a bonding site with another structure. １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, and * represents a bonding site with another structure. １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, and * represents a bonding site with another structure. １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, n2 represents an integer of 0 to 3, R ２ <6> The resin composition according to any one of <1> to <5>, wherein the resin contains a repeating unit represented by the following formula (1-1): X １ is a tetravalent organic group of the formula １is a divalent organic group. <7> The resin composition according to any one of <1> to <6>, wherein the weight-average molecular weight of the resin is 5,000 or more and less than 120,000. <8> The resin composition according to any one of <1> to <7>, wherein the resin does not contain a polymerizable compound or contains the polymerizable compound in an amount of less than 15% by mass based on the total solid content. <9> The resin composition according to any one of <1> to <7>, wherein the resin does not contain a polymerizable compound or contains the polymerizable compound in an amount of 10 parts by mass or less based on 100 parts by mass of the resin. <10> The resin composition according to any one of <1> to <7>, wherein the polymerizable compound is contained in an amount of 1 to 10 parts by mass based on 100 parts by mass of the resin. <11> The resin composition according to any one of <1> to <10>, wherein the imidization rate is 55% or more and less than 70%. <12> The resin composition according to any one of <1> to <11>, wherein the resin composition is a negative-type photosensitive resin composition. <13> The resin composition according to any one of <1> to <12>, which is used for forming an interlayer insulating film for a redistribution layer. <14> A cured product obtained by curing the resin composition according to any one of <1> to <13>. <15> A laminate comprising two or more layers made of the cured product according to <14>, and a metal layer between any two of the layers made of the cured products. <16> A method for producing a cured product, comprising a film formation step of applying the resin composition according to any one of <1> to <13> onto a substrate to form a film. <17> A method for producing the cured product according to <16>, comprising an exposure step of selectively exposing the film to light and a development step of developing the film with a developer to form a pattern. <18> A method for producing the cured product according to <16> or <17>, comprising a heating step of heating the film at 50 to 450°C. <19> A method for producing a laminate, comprising the method for producing a cured product according to any one of <16> to <18>. <20> A method for producing a semiconductor device, comprising the method for producing the cured product according to any one of <16> to <18>. <21> A semiconductor device, comprising the cured product according to <14>. <22> A method for producing a resin, comprising the steps of: synthesizing a polyimide oligomer having an amino group at its terminal; and reacting the polyimide oligomer with a compound represented by the following formula (A-1): In formula (A-1), A ４１ and A４２ are each independently —O— or —NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ４１ and R ４２ are each independently a hydrogen atom or a monovalent organic group, and X ４ is a tetravalent organic group.

[0009] According to the present invention, there are provided a resin composition that can produce a cured product that is suppressed in unevenness during application and shrinkage during curing, a cured product obtained by curing the resin composition, a laminate including the cured product, a method for producing the cured product, a method for producing the laminate, a method for producing a semiconductor device including the method for producing the cured product, and a semiconductor device including the cured product. Furthermore, according to the present invention, there is provided a method for synthesizing a novel resin.

[0010] The following describes the main embodiments of the present invention. However, the present invention is not limited to the explicitly described embodiments. In this specification, a numerical range expressed using the symbol "to" means a range that includes the numerical values ​​before and after "to" as the lower and upper limits, respectively. In this specification, the term "process" refers not only to an independent process but also to a process that cannot be clearly distinguished from other processes as long as the process achieves its intended effect. In the description of a group (atomic group), a notation that does not specify whether it is substituted or unsubstituted encompasses both unsubstituted groups (atomic groups) and substituted groups (atomic groups). For example, the term "alkyl group" encompasses not only unsubstituted alkyl groups (unsubstituted alkyl groups) but also substituted alkyl groups (substituted alkyl groups). In this specification, unless otherwise specified, "exposure" includes not only exposure using light but also exposure using particle beams such as electron beams and ion beams. In addition, examples of light used for exposure include actinic rays or radiation such as the bright line spectrum of a mercury lamp, far ultraviolet light typified by excimer lasers, extreme ultraviolet light (EUV light), X-rays, and electron beams. As used herein, "(meth)acrylate" refers to either or both of "acrylate" and "methacrylate," "(meth)acrylic" refers to either or both of "acrylic" and "methacrylic," and "(meth)acryloyl" refers to either or both of "acryloyl" and "methacryloyl." In the structural formulae herein, Me represents a methyl group, Et represents an ethyl group, Bu represents a butyl group, and Ph represents a phenyl group. As used herein, the term "total solid content" refers to the total mass of all components of the composition excluding the solvent. Furthermore, as used herein, the term "solid content concentration" refers to the mass percentage of the components other than the solvent relative to the total mass of the composition. As used herein, the weight average molecular weight (Mw) and number average molecular weight (Mn) are values ​​measured using gel permeation chromatography (GPC) and are defined as polystyrene equivalent values, unless otherwise specified.In this specification, the weight-average molecular weight (Mw) and number-average molecular weight (Mn) can be determined, for example, by using an HLC-8220GPC (manufactured by Tosoh Corporation) and guard columns HZ-L, TSKgel Super HZM-M, TSKgel Super HZ4000, TSKgel Super HZ3000, and TSKgel Super HZ2000 (all manufactured by Tosoh Corporation) connected in series. Unless otherwise specified, these molecular weights are measured using NMP (N-methyl-2-pyrrolidone) as the eluent. However, when NMP is not suitable as the eluent, for example, due to low solubility, THF (tetrahydrofuran) can also be used. Furthermore, unless otherwise specified, detection in GPC measurement is assumed to be performed using a UV (ultraviolet) detector at a wavelength of 254 nm. In this specification, when the positional relationship of each layer constituting a laminate is described as "above" or "below," it is sufficient that another layer is above or below the reference layer among the multiple layers being considered. In other words, a third layer or element may be interposed between the reference layer and the other layer, and the reference layer and the other layer do not need to be in contact with each other. Unless otherwise specified, the direction in which layers are stacked on the substrate is referred to as "above." Alternatively, if a resin composition layer is present, the direction from the substrate to the resin composition layer is referred to as "above," and the opposite direction is referred to as "below." Note that such vertical directions are defined for convenience in this specification, and in actual embodiments, the "above" direction in this specification may differ from the vertically upward direction. In this specification, unless otherwise specified, the composition may contain two or more compounds corresponding to each component contained in the composition. Furthermore, unless otherwise specified, the content of each component in the composition means the total content of all compounds corresponding to that component. In this specification, unless otherwise specified, the temperature is 23° C., the atmospheric pressure is 101,325 Pa (1 atmosphere), and the relative humidity is 50% RH. In this specification, a combination of preferred embodiments is a more preferred embodiment.

[0011] (Resin Composition) The resin composition of the present invention comprises a resin having at least one repeating unit selected from the group consisting of repeating units represented by formula (1-2), repeating units represented by formula (1-3), and repeating units represented by formula (1-4), a polymerization initiator, and a solvent, wherein the resin has an imidization rate of 40 to 85%. In the present invention, a resin having at least one repeating unit selected from the group consisting of repeating units represented by formula (1-2), repeating units represented by formula (1-3), and repeating units represented by formula (1-4) and having an imidization rate of 40 to 85% is also referred to as a "specific resin."

[0012] The resin composition of the present invention is preferably used to form a photosensitive film that is subjected to exposure and development, and more preferably to form a film that is subjected to exposure and development using a developer containing an organic solvent. The resin composition of the present invention can be used, for example, to form an insulating film for a semiconductor device, an interlayer insulating film for a redistribution layer, a stress buffer film, etc., and is preferably used to form an interlayer insulating film for a redistribution layer. Furthermore, the resin composition of the present invention is preferably a negative photosensitive resin composition. In the present invention, a resin composition used to form a photosensitive film that is subjected to negative development is referred to as a negative photosensitive resin composition. In the present invention, negative development refers to development in which unexposed areas are removed by development in exposure and development, and positive development refers to development in which exposed areas are removed by development. The exposure method, developer, and development method may, for example, be the exposure method, developer, and development method described in the exposure step and development step in the description of the method for producing a cured product described below.

[0013] The resin composition of the present invention suppresses unevenness during application of the resin composition and suppresses shrinkage during curing. The inventors have found that the above-mentioned problems can be solved by using a specific resin. The mechanism by which the above-mentioned configuration achieves this effect is unknown, but the following speculation is made. The inventors have found that increasing the solids concentration of the composition is effective in reducing unevenness during application, and that increasing the imidization rate of the resin to reduce components released from the resin during curing is effective in suppressing shrinkage during curing. However, it has been found that if the imidization rate of the resin is too high, the resin does not dissolve in the solvent in the composition and becomes difficult to handle. It is believed that by ensuring an imidization rate of the resin of 40% or more, components released from the resin during curing can be reduced, thereby suppressing cure shrinkage. Furthermore, by ensuring a certain degree of solubility of the resin in solvents, it is believed that the solids concentration of the composition can be increased, thereby suppressing application unevenness.

[0014] However, Patent Document 1 does not describe a resin composition containing a specific resin.

[0015] The components contained in the resin composition of the present invention will be described in detail below.

[0016] <Specific Resin> The resin composition of the present invention contains a resin (specific resin) having at least one repeating unit selected from the group consisting of a repeating unit represented by formula (1-2), a repeating unit represented by formula (1-3), and a repeating unit represented by formula (1-4), and having an imidization rate of 40 to 85%. In formula (1-2), A ２ is -O- or -NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ２ is a hydrogen atom or a monovalent organic group, and X ２ is a tetravalent organic group, and Y ２ is a divalent organic group. ３ is -O- or -NR Ｚ - and R Ｚis a hydrogen atom or a monovalent organic group, and R ３ is a hydrogen atom or a monovalent organic group, and X ３ is a tetravalent organic group, and Y ３ is a divalent organic group. ４１ and A ４２ are each independently —O— or —NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ４１ and R ４２ are each independently a hydrogen atom or a monovalent organic group, and X ４ is a tetravalent organic group, and Y ４ is a divalent organic group.

[0017] The specific resin is preferably a polyimide precursor. A polyimide precursor refers to a resin that undergoes a change in chemical structure in response to an external stimulus to become a polyimide. A resin that undergoes a change in chemical structure in response to heat to become a polyimide is preferred, and a resin that undergoes a ring-closing reaction in response to heat to form a ring structure to become a polyimide is more preferred. In the present invention, polyimide refers to a resin having a repeating unit containing an imide group in its molecular chain, and preferably a resin having a repeating unit containing an imide ring structure in its molecular chain. Furthermore, when the polyimide is a linear resin, the polyimide is preferably a resin having a repeating unit containing an imide group in its main chain, and more preferably a resin having a repeating unit containing an imide ring structure in its main chain. In this specification, the term "main chain" refers to the relatively longest bonding chain in the resin molecule, and the term "side chain" refers to any other bonding chain. In this specification, the term "imide group" refers to a structure represented by *-C(=O)N(-*)C(=O)-*, where * represents a bonding site to another structure, preferably a bonding site to a carbon atom, and more preferably a bonding site to a quaternary carbon atom. In this specification, the imide ring structure refers to a ring structure containing two carbon atoms and all of the nitrogen atoms in the imide as ring members. The imide ring structure is preferably a five-membered ring. The polyimide may be a so-called polyamideimide, which has an amide group in the molecular chain in addition to the imide group. In this specification, the amide group refers to a structure represented by *-C(=O)N(-#)-*, where * represents a bonding site to another structure, preferably a bonding site to a carbon atom, and more preferably a bonding site to a quaternary carbon atom. Furthermore, # represents a bonding site to another structure, preferably a bonding site to a hydrogen atom or a bonding site to a carbon atom, and more preferably a bonding site to a hydrogen atom.

[0018] The specific resin preferably has a polymerizable group, and more preferably contains a radically polymerizable group. When the specific resin has a radically polymerizable group, the resin composition of the present invention preferably contains a radical polymerization initiator as a polymerization initiator. Furthermore, from the viewpoint of resolution, it is also preferable to contain a radical polymerization initiator and a radical crosslinking agent. Furthermore, in these embodiments, a sensitizer can be contained as necessary. From such a resin composition, for example, a negative-type photosensitive film is formed. Furthermore, the specific resin may have a polarity conversion group such as an acid-decomposable group. When the specific resin has an acid-decomposable group, the resin composition preferably contains a photoacid generator. From such a resin composition, for example, a chemically amplified positive-type photosensitive film or a negative-type photosensitive film is formed.

[0019] [Imidization Rate] In the present invention, the imidization rate is a value calculated by the following method. The resin is dissolved in γ-butyrolactone, diluted to a viscosity of 2,000 mPa·s, and applied to a silicon wafer by spin coating to form a resin layer. If a resin layer cannot be formed due to reasons such as low solubility of the resin in γ-butyrolactone, the solvent may be changed to another solvent. Examples of such solvents include solvents contained in the resin composition, such as NMP. The viscosity may also be adjusted as appropriate within an adjustable range. The silicon wafer to which the resulting resin layer is applied is dried on a hot plate at 110°C for 5 minutes to obtain a resin layer on the silicon wafer with a uniform thickness of approximately 15 μm after film formation. Here, if only a resin solution with a low viscosity is obtained and it is difficult to obtain a resin layer with a thickness of 15 μm, the film thickness may be adjusted as appropriate. For example, if the film thickness is 5 μm or greater, a similar imidization rate value can be obtained. The resin layer was measured by the ATR method using NicoletiS20 (manufactured by Thermofisher) in the measurement range of 4000 to 700 cm －１ , the measurement is performed 50 times. －１ Around (1350-1450 cm －１ (If there are multiple peaks, the peak with the greatest intensity) and 1500 cm －１ Around (1460-1550 cm－１ The imidization index B is calculated in the same manner for a film that has been heated at a heating rate of 10°C / min in a nitrogen atmosphere and heated at 350°C for 1 hour, and the imidization rate of the resin is calculated by dividing the imidization index A by the imidization index B. The imidization rate of the resin is calculated by dividing the imidization index A by the imidization index B.

[0020] From the viewpoint of suppressing cure shrinkage, the imidization degree of the specific resin is preferably 45% or more, more preferably 50% or more, and even more preferably 55% or more. From the viewpoint of suppressing coating unevenness, the imidization degree of the specific resin is preferably 80% or less, more preferably 75% or less, and even more preferably 70% or less.

[0021] [Repeating unit represented by formula (1-2), formula (1-3), or formula (1-4)] The specific resin has at least one repeating unit selected from the group consisting of a repeating unit represented by formula (1-2), a repeating unit represented by formula (1-3), and a repeating unit represented by formula (1-4). In formula (1-2), A ２ is -O- or -NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ２ is a hydrogen atom or a monovalent organic group, and X ２ is a tetravalent organic group, and Y ２ is a divalent organic group. ３ is -O- or -NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ３ is a hydrogen atom or a monovalent organic group, and X ３ is a tetravalent organic group, and Y ３ is a divalent organic group. ４１ and A ４２ are each independently —O— or —NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ４１ and R ４２ are each independently a hydrogen atom or a monovalent organic group, and X４ is a tetravalent organic group, and Y ４ is a divalent organic group.

[0022] -A ２ - A in formula (1-2) ２ represents an oxygen atom or -NR ｚ -, and an oxygen atom is preferred. ｚ represents a hydrogen atom or a monovalent organic group, and is preferably a hydrogen atom.

[0023] -R ２ R in formula (1-2) ２ represents a hydrogen atom or a monovalent organic group. The monovalent organic group preferably contains a linear or branched alkyl group, a cyclic alkyl group, an aromatic group, or a polyalkyleneoxy group. ２ It is preferable that the specific resin contains a polymerizable group. The polymerizable group is a group capable of undergoing a crosslinking reaction by the action of heat, radicals, or the like, and a radically polymerizable group is preferable. Specific examples of the polymerizable group include a group having an ethylenically unsaturated bond, an alkoxymethyl group, a hydroxymethyl group, an acyloxymethyl group, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group. The radically polymerizable group contained in the specific resin is preferably a group having an ethylenically unsaturated bond. Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (e.g., a vinylphenyl group), a (meth)acrylamide group, a (meth)acryloyloxy group, and a group represented by the following formula (III), and a group represented by the following formula (III) is preferable.

[0024]

[0025] In formula (III), R ２００ represents a hydrogen atom, a methyl group, an ethyl group, or a methylol group, and is preferably a hydrogen atom or a methyl group. In formula (III), * represents a bonding site with another structure. In formula (III), R ２０１ represents an alkylene group having 2 to 12 carbon atoms, —CH ２ CH(OH)CH ２-, a cycloalkylene group or a polyalkyleneoxy group. ２０１ Examples of the alkylene group include an ethylene group, a propylene group, a trimethylene group, a tetramethylene group, a pentamethylene group, a hexamethylene group, an octamethylene group, and a dodecamethylene group; a 1,2-butanediyl group, a 1,3-butanediyl group; a —CH ２ CH(OH)CH ２ alkylene groups such as ethylene and propylene; ２ CH(OH)CH ２More preferred are alkylene groups such as ethylene and propylene, or polyalkyleneoxy groups. In the present invention, a polyalkyleneoxy group refers to a group in which two or more alkyleneoxy groups are directly bonded. The alkylene groups in the multiple alkyleneoxy groups contained in the polyalkyleneoxy group may be the same or different. When a polyalkyleneoxy group contains multiple alkyleneoxy groups with different alkylene groups, the arrangement of the alkyleneoxy groups in the polyalkyleneoxy group may be a random arrangement, a block arrangement, or an arrangement having an alternating pattern. The number of carbon atoms in the alkylene group (including the number of carbon atoms in the substituent if the alkylene group has a substituent) is preferably 2 or more, more preferably 2 to 10, even more preferably 2 to 6, even more preferably 2 to 5, even more preferably 2 to 4, even more preferably 2 or 3, and particularly preferably 2. The alkylene group may also have a substituent. Preferred substituents include alkyl groups, aryl groups, and halogen atoms. The number of alkyleneoxy groups contained in the polyalkyleneoxy group (the number of repeating polyalkyleneoxy groups) is preferably 2 to 20, more preferably 2 to 10, and even more preferably 2 to 6. From the viewpoint of solvent solubility and solvent resistance, the polyalkyleneoxy group is preferably a polyethyleneoxy group, a polypropyleneoxy group, a polytrimethyleneoxy group, a polytetramethyleneoxy group, or a group in which multiple ethyleneoxy groups and multiple propyleneoxy groups are bonded, more preferably a polyethyleneoxy group or a polypropyleneoxy group, and even more preferably a polyethyleneoxy group. In the group in which multiple ethyleneoxy groups and multiple propyleneoxy groups are bonded, the ethyleneoxy groups and propyleneoxy groups may be arranged randomly, in blocks, or in an alternating pattern. The preferred embodiments of the number of repeating ethyleneoxy groups and the like in these groups are as described above.

[0026] In formula (1-2), R ２is a hydrogen atom, the specific resin may form a counter salt with a tertiary amine compound having an ethylenically unsaturated bond. An example of such a tertiary amine compound having an ethylenically unsaturated bond is N,N-dimethylaminopropyl methacrylate.

[0027] In formula (1-2), R ２ However, it may also be a polarity conversion group such as an acid-decomposable group. The acid-decomposable group is not particularly limited as long as it is decomposed by the action of an acid to generate an alkali-soluble group such as a phenolic hydroxy group or a carboxy group. However, an acetal group, a ketal group, a silyl group, a silyl ether group, a tertiary alkyl ester group, etc. are preferred, and from the viewpoint of exposure sensitivity, an acetal group or a ketal group is more preferred. Specific examples of the acid-decomposable group include a tert-butoxycarbonyl group, an isopropoxycarbonyl group, a tetrahydropyranyl group, a tetrahydrofuranyl group, an ethoxyethyl group, a methoxyethyl group, an ethoxymethyl group, a trimethylsilyl group, a tert-butoxycarbonylmethyl group, a trimethylsilyl ether group, etc. From the viewpoint of exposure sensitivity, an ethoxyethyl group or a tetrahydrofuranyl group is preferred.

[0028] -X ２ - In formula (1-2), X ２ The number of carbon atoms in X is preferably 4 or more, more preferably 4 to 50, and even more preferably 6 to 40. ２ is preferably any one of the structures represented by the following formulas (2a) to (2g): ２ A repeating unit having any of the structures represented by the following formulas (2a) to (2g) is also referred to as repeating unit A-2. In formulas (2a) to (2g), L １ and L ２ are each independently a divalent group that is not conjugated with the benzene ring to which it is bonded, or a single bond, and *1 to *4 each represent a bonding site with the carbonyl group described in formula (1-2), and the hydrogen atoms in these structures may be substituted with substituents.

[0029] In formula (2c), L １ and L ２ are each independently —CH ２ - or -O- is preferred. The hydrogen atoms in formulas (2a) to (2g) may be substituted with a substituent, and examples of the substituent include an alkyl group, a halogenated alkyl group, etc., and an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms is preferred, with a methyl group or a trifluoromethyl group being more preferred. A halogenated alkyl group refers to a group in which at least one hydrogen atom of an alkyl group is substituted with a halogen atom. As the halogen atom, F or Cl is preferred, and F is more preferred.

[0030] In addition, in formula (1-2), X ２ It is also preferable that X contains a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulas (V-1) to (V-10). By being an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-10), the chemical resistance and flatness of the cured product are improved. ２ is an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-5), the chemical resistance and flatness of the cured product are improved. ２ is an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-5), it is possible to obtain effects such as suppressing the generation of development residues, lowering the dielectric constant of the cured product, and reducing the thermal expansion coefficient.By using an organic group containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-6) to (V-10), it is possible to obtain effects such as improving the transmittance of ultraviolet light, making it difficult for the pattern of the cured product to become tapered, and widening the tolerance for the exposure dose. In formula (V-2), R Ｘ１ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group. Ｘ２ and R Ｘ３ each independently represents a hydrogen atom or a substituent, R Ｘ２ and R Ｘ３may be bonded to form a ring structure. In formula (V-4), n1 represents an integer of 1 or more. In formula (V-8), R Ｘ５ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group.

[0031] In formula (V-2), R Ｘ１ are each independently preferably an alkyl group or a halogenated alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms, and even more preferably a methyl group or a trifluoromethyl group. A halogenated alkyl group refers to a group in which at least one hydrogen atom of an alkyl group has been substituted with a halogen atom. The halogen atom is preferably F or Cl, and more preferably F. In formula (V-3), R Ｘ２ and R Ｘ３ are each preferably independently a hydrogen atom. Ｘ２ and R Ｘ３ When R Ｘ２ and R Ｘ３ The structure formed by bonding is a single bond, —O— or —C(R) ２ - is preferred, and -O- or -C(R) ２ R represents a hydrogen atom or a monovalent organic group, preferably a hydrogen atom, an alkyl group, or an aryl group, and more preferably a hydrogen atom. In formula (V-4), n1 is preferably an integer of 1 to 5, more preferably an integer of 1 to 3, still more preferably 1 or 2, and particularly preferably 1. In formula (V-8), R Ｘ５ are each independently preferably an alkyl group or a halogenated alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms, and even more preferably a methyl group or a trifluoromethyl group. A halogenated alkyl group refers to a group in which at least one hydrogen atom of an alkyl group has been substituted with a halogen atom. As the halogen atom, F or Cl is preferred, and F is more preferred.

[0032] X ２ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-1), X ２is preferably a group represented by the following formula (V-1-1): In the following formula, * represents X in formula (1-2). ２ represents bonding sites with the four carbonyl groups to which n1 is bonded, and n1 represents an integer of 0 to 5, and is also preferably an integer of 1 to 5. Furthermore, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0033] X ２ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-2), X ２ is preferably a group represented by the following formula (V-2-1): In this specification, a bond crossing a side of a ring structure means that it substitutes one of the hydrogen atoms in the ring structure. Ｘ１ represents a single bond or —O—, and * represents X in formula (1-2). ２ represents the bonding site with the four carbonyl groups to which R is bonded. Ｘ１ The definitions and preferred embodiments of are as described above. In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.

[0034] X ２ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-3), X ２ is preferably a group represented by the following formula (V-3-1) or formula (V-3-2), and from the viewpoint of reducing the dielectric constant of the cured product, is preferably a group represented by formula (V-3-2). In the following formulas, * represents X in formula (1-2). ２ represents the bonding site with the four carbonyl groups to which R is bonded. Ｘ２ and R Ｘ３ The definitions and preferred embodiments of are as described above. In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.

[0035] X ２ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-4), X ２is preferably a group represented by the following formula (V-4-1): In the following formula (V-4-1), * represents X in formula (1-2). ２ represents the bonding sites with the four carbonyl groups to which n is bonded, and n1 represents an integer of 1 to 5. Furthermore, the hydrogen atoms in formula (V-4-1) may be further substituted with known substituents such as hydrocarbon groups. Examples of known substituents include alkyl groups, halogenated alkyl groups, and halogen atoms. However, it is also preferable that none of the hydrogen atoms in the structure represented by (V-4-1) are substituted.

[0036] X ２ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-5), X ２ is preferably a group represented by the following formula (V-5-1): In the following formula, * represents X in formula (1-2). ２ represents the bonding sites with the four carbonyl groups to which the carbonyl groups are bonded. Furthermore, the hydrogen atoms in formula (V-5-1) may be further substituted with known substituents such as hydrocarbon groups. Examples of known substituents include alkyl groups, halogenated alkyl groups, and halogen atoms. However, it is also preferable that none of the hydrogen atoms in the structure represented by (V-5-1) are substituted.

[0037] X ２ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-6), X ２ is preferably a group represented by the following formula (V-6-1): In the following formula, * represents X in formula (1-2). ２ represents the bonding sites with the four carbonyl groups to which the carbonyl groups are bonded. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0038] X ２ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-7), X ２ is preferably a group represented by the following formula (V-7-1): In the following formula, * represents X in formula (1-2). ２represents the bonding sites with the four carbonyl groups to which the carbonyl groups are bonded. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0039] X ２ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-8), X ２ is preferably a group represented by the following formula (V-8-1): In the following formula, * represents X in formula (1-2). ２ represents the bonding site with the four carbonyl groups to which R is bonded. Ｘ５ The definition and preferred embodiments of are as described above. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0040] X ２ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-9), X ２ is preferably a group represented by the following formula (V-9-1): In the following formula, * represents X in formula (1-2). ２ represents the bonding sites with the four carbonyl groups to which the carbonyl groups are bonded. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0041] X ２ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-10), X ２ is preferably a group represented by the following formula (V-10-1): In the following formula, * represents X in formula (1-2). ２ represents the bonding sites with the four carbonyl groups to which the carbonyl groups are bonded. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0042] Other, X ２ may be a tetracarboxylic acid residue remaining after removal of the anhydride group from a tetracarboxylic acid dianhydride described in paragraphs 0055 to 0057 of JP-A No. 2023-003421.

[0043] Also, X２ It is preferable that X does not contain an imide bond in the structure. ２ In the present invention, the urethane bond is *—O—C(═O)—NR Ｎ - is a bond represented by *, and R Ｎ represents a hydrogen atom or a monovalent organic group, and * represents a bonding site with a carbon atom. Ｎ is preferably a hydrogen atom or a hydrocarbon group, more preferably a hydrogen atom or an alkyl group, and even more preferably a hydrogen atom. Ｎ —C(═O)—NR Ｎ - is a bond represented by *, and R Ｎ R each independently represents a hydrogen atom or a monovalent organic group, and * represents a bonding site with a carbon atom. Ｎ The preferred embodiments of X are as described above. ２ It is preferable that X does not contain an ester bond in its structure. In the present invention, the ester bond is a bond represented by *--O--C(=O)--*. Among these, X ２ It is preferable that the copolymer does not contain an imide bond, a urethane bond, a urea bond, or an amide bond, and it is more preferable that the copolymer does not contain an imide bond, a urethane bond, a urea bond, an amide bond, or an ester bond.

[0044] -Y ２ - In formula (2), Y ２ The number of carbon atoms in Y is preferably 4 or more, more preferably 4 to 50, and even more preferably 6 to 40. ２ is preferably a structure containing a structure represented by formula (C-1) to formula (C-5). In formula (C-1), R １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, n2 represents an integer of 0 to 3, and * represents a bonding site with another structure. １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, n2 represents an integer of 0 to 3, R ２Each independently represents an alkyl group or a fluoroalkyl group, and * represents a bonding site with another structure. １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, and * represents a bonding site with another structure. １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, and * represents a bonding site with another structure. １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, n2 represents an integer of 0 to 3, R ２ Each independently represents an alkyl group or a fluoroalkyl group, and * represents a bonding site to another structure.

[0045] In formula (C-1), R １ are each independently preferably an alkyl group or a halogenated alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms, and even more preferably a methyl group or a trifluoromethyl group. The halogen atom in the halogenated alkyl group is preferably F or Cl, and more preferably F. In formula (C-1), n1 is preferably 0 or 1, and more preferably 1. In formula (C-1), n2 is preferably 0 or 1, and more preferably 1.

[0046] In formula (C-2), R １ Preferred embodiments of n1 and n2 are each R １ , n1 and n2 are the same as the preferred embodiments. An alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms is preferred, and a methyl group or a trifluoromethyl group is more preferred.

[0047] In formula (C-3), R １ and n1 are each preferably represented by R １ and n1 are the same as the preferred embodiments.

[0048] In formula (C-4), R １ and n1 are each preferably represented by R １ and n1 are the same as the preferred embodiments.

[0049] In formula (C-5), R １ , R ２ Preferred embodiments of n1 and n2 are each R １ , R ２ , n1 and n2 are the same as the preferred embodiments.

[0050] In formulae (C-1) to (C-5), each * is preferably a bonding site to a nitrogen atom.

[0051] Others, Y ２ may be a group described in paragraphs 0042 to 0053 of JP-A No. 2023-003421. ２ It is preferable that Y does not contain an imide bond in the structure. ２ It is preferable that Y does not contain a urethane bond, a urea bond, or an amide bond in the structure. ２ It is preferable that Y does not contain an ester bond in the structure. ２ It is preferable that the copolymer does not contain an imide bond, a urethane bond, a urea bond, or an amide bond, and it is more preferable that the copolymer does not contain an imide bond, a urethane bond, a urea bond, an amide bond, or an ester bond.

[0052] -A ３ , R ３ , X ３ , Y ３ A in formula (1-3) ３ , R ３ , X ３ and Y ３ A preferred embodiment of the formula (1-2) is ２ , R ２ , X ２ and Y ２ However, the same as the preferred embodiment of A ２ , R ２ , X ２ and Y ２ In the explanation of the formula (1-2), the expression "formula (1-2)" should be read as "formula (1-3)."

[0053] -A ４１ , A ４２ , R ４１ , R ４２ , X４ , Y ４ A in formula (1-4) ４１ and A ４２ A preferred embodiment of each of the above is A in formula (1-2). ２ The preferred embodiments of R in formula (1-4) are the same as those of ４１ and R ４２ Preferred embodiments of the formula (1-2) are: ２ However, the preferred embodiments are the same as those of the above. ２ In the explanation of the formula (1-2), the description of "formula (1-2)" should be read as "formula (1-4)". X in the formula (1-4) ４ and Y ４ A preferred embodiment of the formula is X in formula (1-2). ２ and Y ２ However, the preferred embodiments of X are the same as those of ２ and Y ２ In the explanation of the formula (1-2), the expression "formula (1-2)" should be read as "formula (1-4)."

[0054] The specific resin preferably contains at least one repeating unit selected from the group consisting of the following repeating units A-2, A-3, and A-4: Repeating unit A-2: A repeating unit represented by formula (1-2), wherein X ２ Repeating unit A-3: A repeating unit represented by formula (1-3), wherein X ３ Repeating unit A-4: A repeating unit represented by formula (1-4), wherein X ４ A repeating unit having any one of the structures represented by formula (2a) to formula (2g)

[0055] The specific resin preferably contains at least one repeating unit selected from the group consisting of the following repeating units B-2, B-3, and B-4. In particular, the specific resin preferably contains at least one repeating unit selected from the group consisting of the repeating unit A-2, A-3, and A-4, and at least one repeating unit selected from the group consisting of the following repeating units B-2, B-3, and B-4. Repeating unit B-2: A repeating unit represented by formula (1-2), wherein X ２ Repeating unit B-3: a repeating unit represented by formula (1-3), wherein X ３ Repeating unit B-4: A repeating unit represented by formula (1-4), wherein X is a repeating unit containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-10). ４ a repeating unit containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-10):

[0056] The specific resin is a repeating unit represented by the above formula (1-2), R ２ is a monovalent organic group having an ethylenically unsaturated bond, a repeating unit represented by the above formula (1-3), ３ is a monovalent organic group having an ethylenically unsaturated bond, and a repeating unit represented by the above formula (1-4), wherein R ４１ and R ４２ It is preferred that the copolymer contains at least one repeating unit selected from the group consisting of repeating units in which at least one of the repeating units is a monovalent organic group having an ethylenically unsaturated bond.

[0057] The specific resin is a repeating unit represented by formula (1-2), ２ a repeating unit having a structure represented by formula (C-1) to formula (C-5), a repeating unit having a structure represented by formula (1-3), ３ A repeating unit having a structure containing a structure represented by formula (C-1) to formula (C-5), and a repeating unit having a structure represented by formula (1-4), wherein Y４ It is preferable that the repeating unit Y contains at least one repeating unit selected from the group consisting of repeating units having a structure represented by formula (C-1) to formula (C-5). ２ The repeating unit having a structure containing the structure represented by formula (C-1) to formula (C-5) is preferably a repeating unit corresponding to the repeating unit A-2 or repeating unit B-2 described above. ３ The repeating unit having a structure containing the structure represented by formula (C-1) to formula (C-5) is preferably a repeating unit corresponding to the repeating unit A-3 or repeating unit B-3 described above. ４ The repeating unit having a structure containing the structure represented by formula (C-1) to formula (C-5) is preferably a repeating unit corresponding to the above repeating unit A-4 or repeating unit B-4.

[0058] The specific resin preferably contains a repeating unit represented by the following formula (1-1). X １ is a tetravalent organic group of the formula １ is a divalent organic group.

[0059] In formula (1-1), X １ and Y １ A preferred embodiment of the formula is X in formula (1-2). ２ and Y ２ However, the preferred embodiments of X are the same as those of ２ and Y ２ In the explanation of the formula (1-2), the expression "formula (1-2)" should be read as "formula (1-1)."

[0060] The specific resin preferably contains the following repeating unit A-1: ​​Repeating unit A-1 is a repeating unit represented by formula (1-1), wherein X １ A repeating unit having any one of the structures represented by formula (2a) to formula (2g)

[0061] The specific resin preferably contains the following repeating unit B-1. In particular, the specific resin preferably contains the repeating unit A-1 and the following repeating unit B-1. Repeating unit B-1: A repeating unit represented by formula (1-1), wherein X １a repeating unit containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-10):

[0062] In one embodiment of the specific resin of the present invention, the total content of repeating units represented by formula (1-1), formula (1-2), formula (1-3), or formula (1-4) is 50 mol% or more of all repeating units. The total content is more preferably 70 mol% or more, even more preferably 90 mol% or more, and particularly preferably more than 90 mol%. The upper limit of the total content is not particularly limited, and all repeating units in the specific resin except for the terminal repeating units may be repeating units represented by formula (1-1), formula (1-2), formula (1-3), or formula (1-4).

[0063] Another embodiment of the specific resin of the present invention is one in which the total content of repeating units represented by formula (1-1) or formula (1-4) is 50 mol% or more of all repeating units. This total content is more preferably 70 mol% or more, even more preferably 90 mol% or more, and particularly preferably more than 90 mol%. There is no particular upper limit to the total content, and all repeating units in the specific resin except for the terminal repeating units may be repeating units represented by formula (1-1) or formula (1-4).

[0064] Furthermore, in the specific resin of the present invention, the total content of repeating units corresponding to repeating unit A-1, repeating unit A-2, repeating unit A-3, or repeating unit A-4 (also referred to as "repeating unit A") is preferably 20 mol% or more of all repeating units. The total content is more preferably 30 mol% or more, even more preferably 40 mol% or more, and particularly preferably 50 mol% or more. There is no particular upper limit to the total content, and all repeating units in the specific resin except for the terminal repeating units may be repeating units A.

[0065] Furthermore, in the specific resin of the present invention, the total content of repeating units corresponding to repeating unit B-1, repeating unit B-2, repeating unit B-3, or repeating unit B-4 (also referred to as "repeating unit B") is preferably 0 to 80 mol % of all repeating units, more preferably 5 to 70 mol %, even more preferably 10 to 60 mol %, and particularly preferably 15 to 50 mol %.

[0066] In addition, the total content of repeating units A and B in the specific resin of the present invention is preferably 50 mol% or more of all repeating units. The total content is more preferably 70 mol% or more, even more preferably 90 mol% or more, and particularly preferably more than 90 mol%. The upper limit of the total content is not particularly limited, and all repeating units in the specific resin except for the terminal repeating units may be repeating units A or B.

[0067] The weight average molecular weight (Mw) of the specific resin is preferably 120,000 or less, more preferably 50,000 or less, and even more preferably 40,000 or less. Furthermore, the Mw is preferably 5,000 or more, more preferably 10,000 or more, and even more preferably 15,000 or more. The number average molecular weight (Mn) of the specific resin is preferably 40,000 or less, more preferably 30,000 or less, and even more preferably 20,000 or less. Furthermore, the Mn is preferably 2,000 or more, more preferably 3,000 or more, and even more preferably 4,000 or more. The molecular weight dispersity of the specific resin is preferably 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more. The upper limit of the molecular weight dispersity of the specific resin is not particularly specified, but is, for example, preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less. In this specification, the molecular weight dispersity is a value calculated by weight average molecular weight / number average molecular weight. When the resin composition contains multiple specific resins as specific resins, it is preferable that the weight average molecular weight, number average molecular weight, and dispersity of at least one specific resin are within the above ranges. It is also preferable that the weight average molecular weight, number average molecular weight, and dispersity calculated by treating the multiple specific resins as one resin are each within the above ranges.

[0068] [Method for producing specific resin] The specific resin is synthesized, for example, by the following methods (1) to (3): (1) A method for producing a conventional polyimide precursor using a polyimide oligomer having an amino group at its terminal as a diamine component; (2) A method for imidizing a polyimide precursor produced by a conventional method by thermal imidization, chemical imidization, etc. so that the imidization rate is 40 to 85%; (3) A method for synthesizing a polyamic acid, esterifying a portion of the carboxylic acid, and imidizing the unesterified carboxylic acid portion by thermal imidization, chemical imidization, etc.

[0069] The above (1) preferably includes a step of synthesizing a polyimide oligomer having an amino group at its terminal, and a step of reacting the polyimide oligomer with a compound represented by the following formula (A-1): In formula (A-1), A ４１ and A ４２ are each independently —O— or —NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ４１ and R ４２ are each independently a hydrogen atom or a monovalent organic group, and X ４ is a tetravalent organic group.

[0070] The process for synthesizing a polyimide oligomer having an amino group at its terminal can be performed by any known method. Examples include a method of reacting a tetracarboxylic dianhydride with a diamine at low temperature, a method of reacting a tetracarboxylic dianhydride with a diamine at low temperature to obtain a polyamic acid, and then esterifying the polyamic acid using a condensing agent or alkylating agent, a method of obtaining a diester from a tetracarboxylic dianhydride with an alcohol and then reacting the diamine with a condensing agent, a method of obtaining a diester from a tetracarboxylic dianhydride with an alcohol, then halogenating the remaining dicarboxylic acid with a halogenating agent, and then reacting the diamine with the polyimide precursor. These methods are also useful for synthesizing a polyimide oligomer by imidizing the polyimide precursor using known thermal or chemical imidization methods. Alternatively, the polyimide oligomer may be prepared in a single step from a tetracarboxylic dianhydride and a diisocyanate. To obtain an amino group at the terminal, an excess amount of diamine may be used during synthesis, or a compound having an amino group may be used as an end-capping agent. The polyimide oligomer may be a resin having a repeating unit represented by the above formula (1-1) and having an amino group at the terminal.

[0071] The reaction conditions in the step of reacting the polyimide oligomer with the compound represented by formula (A-1) can be the conditions for a known amidation method using an acid halide and an amine. ４１ , A４２ , R ４１ and R ４２ , X ４ A preferred embodiment of the formula (1-4) is ４１ , A ４２ , R ４１ and R ４２ , X ４ This is the same as the preferred embodiment of the above.

[0072] The compound represented by formula (A-1) can be obtained, for example, by preparing a diester from a tetracarboxylic dianhydride and an alcohol, and then converting the remaining dicarboxylic acid into an acid halogen using a halogenating agent, such as thionyl chloride, oxalyl chloride, or phosphorus oxychloride.

[0073] As for the method for producing the polyimide precursor in (2) above, for example, the method described in paragraphs 0049 to 0051 of WO 2023 / 162905 can be referred to. Known methods can also be referred to for the methods of thermal imidization and chemical imidization.

[0074] As for the method for synthesizing the polyamic acid and the method for esterifying a portion of the carboxylic acid in (3) above, reference can be made to the methods described in paragraphs 0049 to 0051 of International Publication No. 2023 / 162905. Known methods may also be referred to for the thermal imidization and chemical imidization methods. Here, since the unesterified portion is more easily imidized than the esterified portion, the imidization rate of the specific resin obtained can be adjusted by adjusting the amount of esterification.

[0075] [Content] The content of the specific resin in the resin composition of the present invention is preferably 20% by mass or more, more preferably 30% by mass or more, even more preferably 40% by mass or more, and even more preferably 50% by mass or more, based on the total solid content of the resin composition. Furthermore, the content of the resin in the resin composition of the present invention is preferably 99.5% by mass or less, more preferably 99% by mass or less, even more preferably 98% by mass or less, even more preferably 97% by mass or less, and even more preferably 95% by mass or less, based on the total solid content of the resin composition. The resin composition of the present invention may contain only one type of specific resin, or may contain two or more types. When two or more types are contained, the total amount is preferably within the above range.

[0076] <Other Resins> The resin composition of the present invention may contain the specific resin described above and another resin (hereinafter simply referred to as "other resin") different from the specific resin. Examples of other resins include phenolic resins, polyamides, epoxy resins, polysiloxanes, resins containing a siloxane structure, (meth)acrylic resins, (meth)acrylamide resins, urethane resins, butyral resins, styryl resins, polyether resins, and polyester resins. For example, by further adding a (meth)acrylic resin, a resin composition with excellent coatability can be obtained, and a pattern (cured product) with excellent solvent resistance can be obtained. For example, instead of or in addition to the polymerizable compound described below, a resin having a high polymerizable group value and a weight average molecular weight of 20,000 or less (for example, a polymerizable group content of 1×10 per 1 g of resin) can be used. －３ By adding a (meth)acrylic resin (having a molecular weight of 1000 to 1000 mol / g or more) to the resin composition, it is possible to improve the coatability of the resin composition and the solvent resistance of the pattern (cured product).

[0077] When the resin composition of the present invention contains other resins, the content of the other resins is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, even more preferably 1% by mass or more, even more preferably 2% by mass or more, even more preferably 5% by mass or more, and even more preferably 10% by mass or more, based on the total solid content of the resin composition. When the resin composition of the present invention contains other resins, the content of the other resins is preferably 80% by mass or less, more preferably 75% by mass or less, even more preferably 70% by mass or less, even more preferably 60% by mass or less, and even more preferably 50% by mass or less, based on the total solid content of the resin composition. A preferred embodiment of the resin composition of the present invention may also be an embodiment in which the content of the other resin is low. In the above embodiment, the content of the other resin is preferably 20% by mass or less, more preferably 15% by mass or less, even more preferably 10% by mass or less, even more preferably 5% by mass or less, and even more preferably 1% by mass or less, based on the total solid content of the resin composition. The lower limit of the content is not particularly limited, as long as it is 0% by mass or more. The resin composition of the present invention may contain only one type of other resin, or may contain two or more types. When two or more types are contained, the total amount is preferably in the above range.

[0078] <Polymerizable Compound> The resin composition of the present invention preferably does not contain a polymerizable compound or contains a polymerizable compound in an amount of 15 parts by mass or less relative to 100 parts by mass of the specific resin, more preferably does not contain a polymerizable compound or contains a polymerizable compound in an amount of 10 parts by mass or less relative to 100 parts by mass of the specific resin, and even more preferably does not contain a polymerizable compound or contains a polymerizable compound in an amount of 5 parts by mass or less relative to 100 parts by mass of the specific resin.

[0079] From the viewpoint of resolution, it is also preferable that the polymerizable compound is contained in an amount of 1 part by mass or more per 100 parts by mass of the specific resin. In the above embodiment, the content is preferably 2 parts by mass or more, and more preferably 3 parts by mass or more. In the above embodiment, the content is preferably 10 parts by mass or less, and more preferably 5 parts by mass or less.

[0080] Examples of the polymerizable compound include a polymerizable compound having a radical polymerizable group (radical crosslinking agent) and other crosslinking agents.

[0081] [Radical Crosslinking Agent] The resin composition of the present invention preferably contains a radical crosslinking agent. The radical crosslinking agent is a compound having a radical polymerizable group. The radical polymerizable group is preferably a group containing an ethylenically unsaturated bond. Examples of the group containing an ethylenically unsaturated bond include a vinyl group, an allyl group, a vinylphenyl group, a (meth)acryloyl group, a maleimide group, and a (meth)acrylamide group. Among these, a (meth)acryloyl group, a (meth)acrylamide group, and a vinylphenyl group are preferred, and from the viewpoint of reactivity, a (meth)acryloyl group is more preferred. In particular, the resin composition of the present invention preferably contains a compound containing a (meth)acryloyl group as a polymerizable compound.

[0082] The radical crosslinking agent is preferably a compound having one or more ethylenically unsaturated bonds, more preferably a compound having two or more ethylenically unsaturated bonds. The radical crosslinking agent may have three or more ethylenically unsaturated bonds. The compound having two or more ethylenically unsaturated bonds is preferably a compound having 2 to 15 ethylenically unsaturated bonds, more preferably a compound having 2 to 10 ethylenically unsaturated bonds, and even more preferably a compound having 2 to 6 ethylenically unsaturated bonds. From the viewpoint of the film strength of the obtained pattern (cured product), it is also preferable that the resin composition of the present invention contains a compound having two ethylenically unsaturated bonds and the compound having three or more ethylenically unsaturated bonds.

[0083] The molecular weight of the radical crosslinking agent is preferably 2,000 or less, more preferably 1,500 or less, and even more preferably 900 or less. The lower limit of the molecular weight of the radical crosslinking agent is preferably 100 or more.

[0084] Specific examples of radical crosslinking agents include unsaturated carboxylic acids (e.g., acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.), their esters, and amides. Preferred are esters of unsaturated carboxylic acids and polyhydric alcohol compounds, and amides of unsaturated carboxylic acids and polyamine compounds. Also suitable are addition reaction products of unsaturated carboxylic acid esters or amides having a nucleophilic substituent such as a hydroxyl group, amino group, or sulfanyl group with monofunctional or polyfunctional isocyanates or epoxies, and dehydration condensation reaction products of monofunctional or polyfunctional carboxylic acids. Also suitable are addition reaction products of unsaturated carboxylic acid esters or amides having an electrophilic substituent such as an isocyanate group or an epoxy group with monofunctional or polyfunctional alcohols, amines, or thiols, and substitution reaction products of unsaturated carboxylic acid esters or amides having a leaving substituent such as a halogeno group or a tosyloxy group with monofunctional or polyfunctional alcohols, amines, or thiols. As another example, it is also possible to use a group of compounds in which the above-mentioned unsaturated carboxylic acids are replaced with unsaturated phosphonic acids, vinylbenzene derivatives such as styrene, vinyl ethers, allyl ethers, etc. Specific examples can be found in paragraphs 0113 to 0122 of JP 2016-027357 A, the contents of which are incorporated herein by reference.

[0085] The radical crosslinking agent is preferably a compound having a boiling point of 100°C or higher under normal pressure. Examples of compounds having a boiling point of 100°C or higher under normal pressure include the compounds described in paragraph 0203 of WO 2021 / 112189, the contents of which are incorporated herein by reference.

[0086] Other preferred radical crosslinking agents include the radical polymerizable compounds described in paragraphs 0204 to 0208 of WO 2021 / 112189, the contents of which are incorporated herein by reference.

[0087] Preferred radical crosslinking agents include dipentaerythritol triacrylate (commercially available products include KAYARAD D-330 (manufactured by Nippon Kayaku Co., Ltd.)), dipentaerythritol tetraacrylate (commercially available products include KAYARAD D-320 (manufactured by Nippon Kayaku Co., Ltd.) and A-TMMT (manufactured by Shin-Nakamura Chemical Co., Ltd.)), dipentaerythritol penta(meth)acrylate (commercially available products include KAYARAD D-310 (manufactured by Nippon Kayaku Co., Ltd.)), and dipentaerythritol hexa(meth)acrylate (commercially available products include KAYARAD DPHA (manufactured by Nippon Kayaku Co., Ltd.) and A-DPH (manufactured by Shin-Nakamura Chemical Co., Ltd.)), and structures in which the (meth)acryloyl group is bonded via an ethylene glycol residue or a propylene glycol residue. Oligomers of these agents can also be used.

[0088] Commercially available radical crosslinking agents include, for example, SR-494, a tetrafunctional acrylate having four ethyleneoxy chains, SR-209, 231, and 239, which are difunctional methacrylates having four ethyleneoxy chains (all manufactured by Sartomer Corporation), DPCA-60, a hexafunctional acrylate having six pentyleneoxy chains, and TPA-330, a trifunctional acrylate having three isobutyleneoxy chains (all manufactured by Nippon Kayaku Co., Ltd.), and urethane oligomers such as Examples of such an ester include UAS-10 and UAB-140 (manufactured by Nippon Paper Industries Co., Ltd.), NK Ester M-40G, NK Ester 4G, NK Ester M-9300, NK Ester A-9300, and UA-7200 (manufactured by Shin-Nakamura Chemical Co., Ltd.), DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, and AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.), and Blenmar PME400 (manufactured by NOF Corporation).

[0089] Suitable radical crosslinking agents include urethane acrylates such as those described in JP-B No. 48-041708, JP-A No. 51-037193, JP-B No. 02-032293, and JP-B No. 02-016765, and urethane compounds having an ethylene oxide skeleton such as those described in JP-B No. 58-049860, JP-B No. 56-017654, JP-B No. 62-039417, and JP-B No. 62-039418. Compounds having an amino structure or a sulfide structure in the molecule, such as those described in JP-A Nos. 63-277653, 63-260909, and JP-A No. 01-105238, can also be used as radical crosslinking agents.

[0090] The radical crosslinking agent may be a radical crosslinking agent having an acid group such as a carboxy group or a phosphate group. The radical crosslinking agent having an acid group is preferably an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, and more preferably a radical crosslinking agent obtained by reacting a non-aromatic carboxylic anhydride with an unreacted hydroxy group of an aliphatic polyhydroxy compound to provide an acid group. Particularly preferred is a radical crosslinking agent obtained by reacting a non-aromatic carboxylic anhydride with an unreacted hydroxy group of an aliphatic polyhydroxy compound to provide an acid group, in which the aliphatic polyhydroxy compound is pentaerythritol or dipentaerythritol. Examples of commercially available products include polybasic acid-modified acrylic oligomers M-510 and M-520 manufactured by Toagosei Co., Ltd.

[0091] The acid value of the radical crosslinking agent having an acid group is preferably 0.1 to 300 mgKOH / g, more preferably 1 to 100 mgKOH / g. When the acid value of the radical crosslinking agent is within the above range, the agent has excellent handleability in production and developability. Furthermore, the agent has good polymerizability. The acid value is measured in accordance with the description of JIS K 0070:1992.

[0092] As the radical crosslinking agent, a radical crosslinking agent having at least one selected from the group consisting of a urea bond and a urethane bond (hereinafter also referred to as "crosslinking agent U") is also preferred. In the present invention, the urea bond is a radical crosslinking agent having at least one selected from the group consisting of *-NR Ｎ —C(═O)—NR Ｎ- is a bond represented by *, and R Ｎ Each of the *'s independently represents a hydrogen atom or a monovalent organic group, and each * represents a bonding site with a carbon atom. In the present invention, the urethane bond is *—O—C(═O)—NR Ｎ - is a bond represented by *, and R Ｎ represents a hydrogen atom or a monovalent organic group, and * represents a bonding site with a carbon atom. The inclusion of crosslinker U in a resin composition may improve chemical resistance, resolution, and the like. While the mechanism by which this effect is achieved is unclear, it is thought that, for example, a portion of crosslinker U thermally decomposes during curing by heating, generating amines, etc., which then promote the cyclization of precursors of cyclized resins such as polyimide precursors. Crosslinker U may have only one urea bond or urethane bond, one or more urea bonds and one or more urethane bonds, no urethane bonds and two or more urea bonds, or no urea bonds and two or more urethane bonds. The total number of urea bonds and urethane bonds in crosslinker U is 1 or more, preferably 1 to 10, more preferably 1 to 4, and even more preferably 1 or 2. When crosslinker U does not have a urethane bond, the number of urea bonds in crosslinker U is 1 or more, preferably 1 to 10, more preferably 1 to 4, and even more preferably 1 or 2. When the crosslinking agent U does not have a urea bond, the number of urethane bonds in the crosslinking agent U is 1 or more, preferably 1 to 10, more preferably 1 to 4, and even more preferably 1 or 2.

[0093] The radical polymerizable group in the crosslinking agent U is not particularly limited, but examples thereof include a vinyl group, an allyl group, a (meth)acryloyl group, a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, and a maleimide group. A (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, or a maleimide group is preferred, and a (meth)acryloxy group is more preferred. When the crosslinking agent U has two or more radical polymerizable groups, the structures of the respective radical polymerizable groups may be the same or different. The number of radical polymerizable groups in the crosslinking agent U may be only one or may be two or more, preferably 1 to 10, more preferably 1 to 6, and particularly preferably 1 to 4. The radical polymerizable group value (mass of the compound per mole of radical polymerizable group) in the crosslinking agent U is preferably 150 to 400 g / mol. From the viewpoint of chemical resistance of the cured product, the lower limit of the radical polymerizable group value is more preferably 200 g / mol or more, even more preferably 210 g / mol or more, even more preferably 220 g / mol or more, even more preferably 230 g / mol or more, still more preferably 240 g / mol or more, and particularly preferably 250 g / mol or more. From the viewpoint of developability, the upper limit of the radical polymerizable group value is more preferably 350 g / mol or less, even more preferably 330 g / mol or less, and particularly preferably 300 g / mol or less. In particular, the polymerizable group value of crosslinking agent U is preferably 210 to 400 g / mol, and more preferably 220 to 400 g / mol.

[0094] The crosslinking agent U preferably has a structure represented by the following formula (U-1): In formula (U-1), R Ｕ１ represents a hydrogen atom or a monovalent organic group, and A represents —O— or —NR Ｎ - and R Ｎ is a hydrogen atom or a monovalent organic group, Z Ｕ１ is an m-valent organic group, and Z Ｕ２ is an (n+1)-valent organic group, X is a radical polymerizable group, n is an integer of 1 or more, and m is an integer of 1 or more.

[0095] R Ｕ１ R is preferably a hydrogen atom, an alkyl group or an aromatic hydrocarbon group, and more preferably a hydrogen atom. Ｎ is preferably a hydrogen atom, an alkyl group or an aromatic hydrocarbon group, more preferably a hydrogen atom. Ｕ１ represents a hydrocarbon group, -O-, -C(=O)-, -S-, -S(=O) ２ -, -NR Ｎ - or a group in which two or more of these are bonded is preferred, and a hydrocarbon group, or a hydrocarbon group and -O-, -C(=O)-, -S-, -S(=O) ２ - and -NR Ｎ - is more preferred. The hydrocarbon group is preferably a hydrocarbon group having 20 or less carbon atoms, more preferably a hydrocarbon group having 18 or less carbon atoms, and even more preferably a hydrocarbon group having 16 or less carbon atoms. Examples of the hydrocarbon group include saturated aliphatic hydrocarbon groups, aromatic hydrocarbon groups, and groups represented by a combination of these. R Ｎ represents a hydrogen atom or a monovalent organic group, preferably a hydrogen atom or a hydrocarbon group, more preferably a hydrogen atom or an alkyl group, and even more preferably a hydrogen atom or a methyl group. Ｕ２ represents a hydrocarbon group, -O-, -C(=O)-, -S-, -S(=O) ２ -, -NR Ｎ - or a group in which two or more of these are bonded is preferred, and a hydrocarbon group, or a hydrocarbon group and -O-, -C(=O)-, -S-, -S(=O) ２ - and -NR Ｎ A group bonded to at least one group selected from the group consisting of - is more preferred. Ｕ１Examples of the groups include those listed in 1. and preferred embodiments are also the same. X is not particularly limited, but examples include a vinyl group, an allyl group, a (meth)acryloyl group, a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, and a maleimide group, with a (meth)acryloxy group, a (meth)acrylamide group, a vinylphenyl group, or a maleimide group being preferred, and a (meth)acryloxy group being more preferred. n is preferably an integer of 1 to 10, more preferably an integer of 1 to 4, even more preferably 1 or 2, and particularly preferably 1. m is preferably an integer of 1 to 10, more preferably an integer of 1 to 4, and even more preferably 1 or 2.

[0096] It is also preferable that the crosslinking agent U has at least one of a hydroxy group, an alkyleneoxy group, an amide group, and a cyano group. From the viewpoint of the chemical resistance of the resulting cured film, the hydroxy group may be an alcoholic hydroxy group or a phenolic hydroxy group, but an alcoholic hydroxy group is preferred. From the viewpoint of the chemical resistance of the resulting cured film, the alkyleneoxy group is preferably an alkyleneoxy group having 2 to 20 carbon atoms, more preferably an alkyleneoxy group having 2 to 10 carbon atoms, even more preferably an alkyleneoxy group having 2 to 4 carbon atoms, even more preferably an ethylene group or a propylene group, and particularly preferably an ethylene group. The alkyleneoxy group may be contained in the crosslinking agent U as a polyalkyleneoxy group. In this case, the number of repeating alkyleneoxy groups is preferably 2 to 10, more preferably 2 to 6. The amide group is a -C(=O)-NR Ｎ - refers to a bond represented by R Ｎ When the crosslinking agent U has an amide group, the crosslinking agent U may be, for example, R—C(═O)—NR Ｎ - a group represented by *, or *-C(=O)-NR ＮIt can be contained as a group represented by -R. R represents a hydrogen atom or a monovalent substituent, and is preferably a hydrogen atom or a hydrocarbon group, and more preferably a hydrogen atom, an alkyl group, or an aromatic hydrocarbon group. Crosslinking agent U may have two or more structures selected from the group consisting of a hydroxy group, an alkyleneoxy group (however, when a polyalkyleneoxy group is formed, a polyalkyleneoxy group), an amide group, and a cyano group in the molecule, but an embodiment in which only one structure is present in the molecule is also preferred. The hydroxy group, alkyleneoxy group, amide group, and cyano group may be present at any position in crosslinking agent U, but from the viewpoint of chemical resistance, it is also preferred that at least one selected from the group consisting of a hydroxy group, an alkyleneoxy group, an amide group, and a cyano group is linked to at least one radically polymerizable group contained in crosslinking agent U via a linking group containing a urea bond or a urethane bond (hereinafter also referred to as "linking group L2-1"). In particular, when crosslinking agent U contains only one radically polymerizable group, it is preferred that the radically polymerizable group contained in crosslinking agent U and at least one selected from the group consisting of a hydroxy group, an alkyleneoxy group, an amide group, and a cyano group are linked via a linking group containing a urea bond or a urethane bond (hereinafter also referred to as "linking group L2-2"). When crosslinking agent U contains an alkyleneoxy group (however, when it constitutes a polyalkyleneoxy group, it is a polyalkyleneoxy group) and has the linking group L2-1 or the linking group L2-2, the structure bonded to the side of the alkyleneoxy group (however, when it constitutes a polyalkyleneoxy group, it is a polyalkyleneoxy group) opposite to the linking group L2-1 or the linking group L2-2 is not particularly limited, but is preferably a hydrocarbon group, a radically polymerizable group, or a group represented by a combination thereof. As the hydrocarbon group, a hydrocarbon group having 20 or fewer carbon atoms is preferred, a hydrocarbon group having 18 or fewer carbon atoms is more preferred, and a hydrocarbon group having 16 or fewer carbon atoms is even more preferred. Examples of the hydrocarbon group include saturated aliphatic hydrocarbon groups, aromatic hydrocarbon groups, and groups represented by a combination thereof. Preferred embodiments of the radical polymerizable group are the same as those of the radical polymerizable group in the crosslinking agent U.When crosslinking agent U contains an amide group and has the linking group L2-1 or L2-2, the structure bonded to the side of the amide group opposite the linking group L2-1 or L2-2 is not particularly limited, but is preferably a hydrocarbon group, a radically polymerizable group, or a group represented by a combination thereof. The hydrocarbon group is preferably a hydrocarbon group having 20 or fewer carbon atoms, more preferably a hydrocarbon group having 18 or fewer carbon atoms, and even more preferably a hydrocarbon group having 16 or fewer carbon atoms. Examples of the hydrocarbon group include saturated aliphatic hydrocarbon groups, aromatic hydrocarbon groups, and groups represented by a combination thereof. Preferred aspects of the radically polymerizable group are the same as those of the radically polymerizable group in crosslinking agent U described above. In the above aspect, the carbon atom side of the amide group may be bonded to the linking group L2-1 or L2-2, or the nitrogen atom side of the amide group may be bonded to the linking group L2-1 or L2-2. Among these, from the viewpoints of adhesion to the substrate, chemical resistance, and suppression of Cu voids, it is preferable that crosslinking agent U have a hydroxy group.

[0097] From the viewpoint of compatibility with the specific resin, etc., the crosslinking agent U preferably contains an aromatic group. The aromatic group is preferably directly bonded to a urea bond or urethane bond contained in the crosslinking agent U. When the crosslinking agent U contains two or more urea bonds or urethane bonds, it is preferable that one of the urea bonds or urethane bonds is directly bonded to the aromatic group. The aromatic group may be an aromatic hydrocarbon group or an aromatic heterocyclic group, or may have a structure in which these form a condensed ring, but is preferably an aromatic hydrocarbon group. The aromatic hydrocarbon group is preferably an aromatic hydrocarbon group having 6 to 30 carbon atoms, more preferably an aromatic hydrocarbon group having 6 to 20 carbon atoms, and even more preferably a group in which two or more hydrogen atoms have been removed from a benzene ring structure. The aromatic heterocyclic group is preferably a 5- or 6-membered aromatic heterocyclic group. Examples of the aromatic heterocycle in such an aromatic heterocyclic group include pyrrole, imidazole, triazole, tetrazole, pyrazole, furan, thiophene, oxazole, isoxazole, thiazole, pyridine, pyrazine, pyrimidine, pyridazine, triazine, etc. These rings may be condensed with other rings, for example, indole or benzimidazole. The heteroatom contained in the aromatic heterocyclic group is preferably a nitrogen atom, an oxygen atom, or a sulfur atom. The aromatic group is preferably contained in a linking group that links two or more radical polymerizable groups and contains a urea bond or a urethane bond, or a linking group that links at least one selected from the group consisting of the above-mentioned hydroxy group, alkyleneoxy group, amide group, and cyano group to at least one radical polymerizable group contained in the crosslinking agent U.

[0098] The number of atoms (linking chain length) between the urea bond or urethane bond and the radical polymerizable group in crosslinking agent U is not particularly limited, but is preferably 30 or less, more preferably 2 to 20, and even more preferably 2 to 10. When crosslinking agent U contains a total of two or more urea bonds or urethane bonds, when it contains two or more radical polymerizable groups, or when it contains two or more urea bonds or urethane bonds and two or more radical polymerizable groups, the minimum number of atoms (linking chain length) between the urea bond or urethane bond and the radical polymerizable group may be within the above range. In this specification, the "number of atoms (linking chain length) between the urea bond or urethane bond and the polymerizable group" refers to the atomic chain on the path connecting the two atoms or atomic groups to be linked that connects these objects via the shortest distance (minimum number of atoms). For example, in the structure represented by the following formula, the number of atoms (linking chain length) between the urea bond and the radical polymerizable group (methacryloyloxy group) is 2.

[0099] [Axis of symmetry] It is also preferable that the crosslinking agent U is a compound having a structure that does not have an axis of symmetry. The fact that the crosslinking agent U does not have an axis of symmetry means that the crosslinking agent U is a bilaterally asymmetric compound that does not have an axis that would produce a molecule identical to the original molecule by rotating the entire compound. Furthermore, when the structural formula of the crosslinking agent U is written on paper, the fact that the crosslinking agent U does not have an axis of symmetry means that the structural formula of the crosslinking agent U cannot be written in a form that has an axis of symmetry. It is believed that the fact that the crosslinking agent U does not have an axis of symmetry suppresses aggregation of the crosslinking agent U molecules in the composition film.

[0100] [Molecular Weight] The molecular weight of the crosslinking agent U is preferably 100 to 2,000, more preferably 150 to 1,500, and even more preferably 200 to 900.

[0101] The method for producing the crosslinking agent U is not particularly limited, but it can be obtained, for example, by reacting a radical polymerizable compound and a compound having an isocyanate group with a compound having at least one of a hydroxy group and an amino group.

[0102] Specific examples of the crosslinking agent U are shown below, but the crosslinking agent U is not limited to these.

[0103] From the viewpoints of pattern resolution and film elasticity, it is preferable to use a bifunctional methacrylate or acrylate for the resin composition. Specific compounds include triethylene glycol diacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, tetraethylene glycol diacrylate, PEG (polyethylene glycol) 200 diacrylate, PEG 200 dimethacrylate, PEG 600 diacrylate, PEG 600 dimethacrylate, polytetraethylene glycol diacrylate, polytetraethylene glycol dimethacrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, neopentyl glycol diacrylate, neopentyl glycol dimethacrylate, 3-methyl-1,5-pentanediol diacrylate, 1,6-hexyl ... Examples of usable radical crosslinkers include xanediol diacrylate, 1,6-hexanediol dimethacrylate, dimethylol-tricyclodecane diacrylate, dimethylol-tricyclodecane dimethacrylate, ethylene oxide (EO) adduct diacrylate of bisphenol A, propylene oxide (PO) adduct dimethacrylate of bisphenol A, propylene oxide (PO) adduct dimethacrylate of bisphenol A, 2-hydroxy-3-acryloyloxypropyl methacrylate, EO-modified isocyanuric acid diacrylate, EO-modified isocyanuric acid dimethacrylate, and other bifunctional acrylates and bifunctional methacrylates having urethane bonds. Two or more of these may be mixed and used as needed. For example, PEG200 diacrylate refers to polyethylene glycol diacrylate with a formula weight of approximately 200 for the polyethylene glycol chain. From the viewpoint of suppressing warpage of the pattern (cured product), the resin composition of the present invention preferably uses a monofunctional radical crosslinker as the radical crosslinker.Preferred examples of monofunctional radical crosslinking agents include (meth)acrylic acid derivatives such as n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, butoxyethyl (meth)acrylate, carbitol (meth)acrylate, cyclohexyl (meth)acrylate, benzyl (meth)acrylate, phenoxyethyl (meth)acrylate, N-methylol (meth)acrylamide, glycidyl (meth)acrylate, polyethylene glycol mono(meth)acrylate, and polypropylene glycol mono(meth)acrylate; N-vinyl compounds such as N-vinylpyrrolidone and N-vinylcaprolactam; and allyl glycidyl ether. Preferred monofunctional radical crosslinking agents include compounds having a boiling point of 100°C or higher under normal pressure in order to suppress volatilization before exposure. Other examples of bifunctional or higher radical crosslinking agents include allyl compounds such as diallyl phthalate and triallyl trimellitate.

[0104] When a radical crosslinking agent is contained, the content of the radical crosslinking agent is preferably more than 0% by mass and not more than 60% by mass, based on the total solid content of the resin composition. The lower limit is more preferably 5% by mass or more. The upper limit is more preferably 50% by mass or less, and even more preferably 30% by mass or less.

[0105] The radical crosslinking agent may be used alone or in combination of two or more. When two or more types are used in combination, the total amount thereof is preferably within the above range.

[0106] [Other Crosslinking Agents] The resin composition of the present invention preferably contains another crosslinking agent different from the radical crosslinking agent described above. The other crosslinking agent refers to a crosslinking agent other than the radical crosslinking agent described above. Preferably, the other crosslinking agent is a compound having a plurality of groups in the molecule that promote the reaction of forming a covalent bond with other compounds in the composition or their reaction products upon exposure to light by a photoacid generator or a photobase generator. Preferably, the other crosslinking agent is a compound having a plurality of groups in the molecule that promote the reaction of forming a covalent bond with other compounds in the composition or their reaction products under the action of an acid or base. Examples of other crosslinking agents include the compounds described in paragraphs 0179 to 0207 of WO 2022 / 145355. The above descriptions are incorporated herein by reference.

[0107] The content of the other crosslinking agent is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, even more preferably 0.5 to 15% by mass, and particularly preferably 1.0 to 10% by mass, based on the total solid content of the resin composition. Only one type of other crosslinking agent may be contained, or two or more types may be contained. When two or more types of other crosslinking agents are contained, the total amount thereof is preferably within the above range.

[0108] [Polymerization initiator] The resin composition of the present invention contains a polymerization initiator. The polymerization initiator may be a thermal polymerization initiator or a photopolymerization initiator, but it is particularly preferable to contain a photopolymerization initiator. The photopolymerization initiator is preferably a photoradical polymerization initiator. There are no particular restrictions on the photoradical polymerization initiator, and it can be appropriately selected from known photoradical polymerization initiators. For example, a photoradical polymerization initiator that is photosensitive to light in the ultraviolet to visible range is preferred. Alternatively, it may be an activator that reacts with a photoexcited sensitizer to generate active radicals.

[0109] The photoradical polymerization initiator has a capacity of at least about 50 L·mol within a wavelength range of about 240 to 800 nm (preferably 330 to 500 nm). －１ ・cm －１The molar absorption coefficient of the compound can be measured using a known method. For example, it is preferable to measure the molar absorption coefficient using an ultraviolet-visible spectrophotometer (Varian Cary-5 spectrophotometer) at a concentration of 0.01 g / L using ethyl acetate as a solvent.

[0110] Any known compound can be used as the photoradical polymerization initiator. Examples include halogenated hydrocarbon derivatives (e.g., compounds having a triazine skeleton, compounds having an oxadiazole skeleton, compounds having a trihalomethyl group, etc.), acylphosphine compounds such as acylphosphine oxide, hexaarylbiimidazole, oxime compounds such as oxime derivatives, organic peroxides, thio compounds, ketone compounds, aromatic onium salts, ketoxime ethers, α-aminoketone compounds such as aminoacetophenone, α-hydroxyketone compounds such as hydroxyacetophenone, azo compounds, azide compounds, metallocene compounds, organic boron compounds, and iron arene complexes. For details of these compounds, please refer to paragraphs

[0165] to

[0182] of JP 2016-027357 A and paragraphs

[0138] to

[0151] of WO 2015 / 199219 A, the contents of which are incorporated herein by reference. Further, paragraphs 0065 to 0111 of JP 2014-130173 A, compounds described in Japanese Patent No. 6301489, MATERIAL STAGE 37 to 60p, vol. 19, No. 3,2019 described peroxide-based photopolymerization initiators, photopolymerization initiators described in WO 2018 / 221177, photopolymerization initiators described in WO 2018 / 110179, photopolymerization initiators described in JP 2019-043864 A, photopolymerization initiators described in JP 2019-044030 A, peroxide-based initiators described in JP 2019-167313 A can be mentioned, the contents of which are incorporated herein by reference.

[0111] Examples of ketone compounds include the compounds described in paragraph 0087 of JP 2015-087611 A, the contents of which are incorporated herein by reference. As a commercially available product, Kayacure-DETX-S (manufactured by Nippon Kayaku Co., Ltd.) is also preferably used.

[0112] In one embodiment of the present invention, a hydroxyacetophenone compound, an aminoacetophenone compound, or an acylphosphine compound can be suitably used as the photoradical polymerization initiator. More specifically, for example, an aminoacetophenone-based initiator described in JP-A-10-291969 or an acylphosphine oxide-based initiator described in Japanese Patent No. 4225898 can be used, the contents of which are incorporated herein by reference.

[0113] Examples of α-hydroxyketone initiators that can be used include Omnirad 184, Omnirad 1173, Omnirad 2959, and Omnirad 127 (all manufactured by IGM Resins B.V.), IRGACURE 184 (IRGACURE is a registered trademark), DAROCUR 1173, IRGACURE 500, IRGACURE-2959, and IRGACURE 127 (all manufactured by BASF).

[0114] Examples of α-aminoketone initiators that can be used include Omnirad 907, Omnirad 369, Omnirad 369E, and Omnirad 379EG (all manufactured by IGM Resins B.V.), and IRGACURE 907, IRGACURE 369, and IRGACURE 379 (all manufactured by BASF).

[0115] As the aminoacetophenone initiator, acylphosphine oxide initiator, and metallocene compound, for example, compounds described in paragraphs 0161 to 0163 of WO 2021 / 112189 can also be suitably used. The contents of this specification are incorporated herein by reference.

[0116] As the photoradical polymerization initiator, an oxime compound is more preferably used. By using an oxime compound, it is possible to more effectively improve the exposure latitude. An oxime compound is particularly preferred because it has a wide exposure latitude (exposure margin) and also functions as a photocuring accelerator.

[0117] Specific examples of the oxime compound include compounds described in JP-A-2001-233842, compounds described in JP-A-2000-080068, compounds described in JP-A-2006-342166, compounds described in J. C. S. Perkin II (1979, pp. 1653-1660), compounds described in J. C. S. Perkin II (1979, pp. 156-162), compounds described in Journal of Photopolymer Science and Technology (1995, pp.202-232) described compounds, compounds described in JP-A-2000-066385, compounds described in JP-T-2004-534797, compounds described in JP-A-2017-019766, compounds described in Japanese Patent No. 6065596, compounds described in WO 2015 / 152153, compounds described in WO 2017 / 051680, compounds described in JP-A-2017-198865, compounds described in paragraphs 0025 to 0038 of WO 2017 / 164127, compounds described in WO 2013 / 167515 and the like, the contents of which are incorporated herein.

[0118] Preferred oxime compounds include, for example, compounds having the following structure: 3-(benzoyloxy(imino))butan-2-one, 3-(acetoxy(imino))butan-2-one, 3-(propionyloxy(imino))butan-2-one, 2-(acetoxy(imino))pentan-3-one, 2-(acetoxy(imino))-1-phenylpropan-1-one, 2-(benzoyloxy(imino))-1-phenylpropan-1-one, 3-((4-toluenesulfonyloxy)imino)butan-2-one, and 2-(ethoxycarbonyloxy(imino))-1-phenylpropan-1-one. In the resin composition, it is particularly preferable to use an oxime compound as a photoradical polymerization initiator. The oxime compound as a photoradical polymerization initiator has a linking group of >C=N-O-C(=O)- in the molecule.

[0119]

[0120] Commercially available oxime compounds include IRGACURE OXE 01, IRGACURE OXE 02, IRGACURE OXE 03, and IRGACURE OXE 04 (manufactured by BASF), ADEKA OPTOMER N-1919 (manufactured by ADEKA Corporation, photoradical polymerization initiator 2 described in JP 2012-014052 A), TR-PBG-304, TR-PBG-305 (manufactured by Changzhou Strong Electronic New Materials Co., Ltd.), ADEKA ARCLES NCI-730, NCI-831, and ADEKA ARCLES NCI-930 (manufactured by ADEKA Corporation), DFI-091 (manufactured by Daito ChemiX Co., Ltd.), and SpeedCure PDO (SARTOMER Also, an oxime compound having the following structure can be used.

[0121] Examples of photoradical polymerization initiators include oxime compounds having a fluorene ring, oxime compounds having a skeleton in which at least one benzene ring of a carbazole ring is replaced with a naphthalene ring, and oxime compounds having a fluorine atom, as described in paragraphs 0169 to 0171 of WO 2021 / 112189. Also usable are oxime compounds having a nitro group, oxime compounds having a benzofuran skeleton, and oxime compounds in which a substituent having a hydroxy group is bonded to a carbazole skeleton, as described in paragraphs 0208 to 0210 of WO 2021 / 020359. The contents of these compounds are incorporated herein by reference.

[0122] In addition, compounds described in paragraphs 0113 to 0117 of JP-A No. 2023-058585 can also be used as the photopolymerization initiator, the disclosure of which is incorporated herein by reference.

[0123] When the resin composition contains a photopolymerization initiator, the content thereof is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, even more preferably 0.5 to 15% by mass, and even more preferably 1.0 to 10% by mass, based on the total solid content of the resin composition. Only one type of photopolymerization initiator may be contained, or two or more types may be contained. When two or more types of photopolymerization initiators are contained, the total amount is preferably within the above range. Note that the photopolymerization initiator may also function as a thermal polymerization initiator, and therefore crosslinking by the photopolymerization initiator may be further promoted by heating in an oven, hot plate, or the like.

[0124] [Sensitizer] The resin composition may contain a sensitizer. The sensitizer absorbs specific actinic radiation and becomes electronically excited. The electronically excited sensitizer comes into contact with a thermal radical polymerization initiator, a photoradical polymerization initiator, or the like, and undergoes electron transfer, energy transfer, heat generation, and other actions. This causes the thermal radical polymerization initiator or the photoradical polymerization initiator to undergo a chemical change and decompose, generating a radical, acid, or base. Usable sensitizers include benzophenone-based, Michler's ketone-based, coumarin-based, pyrazole azo-based, anilino azo-based, triphenylmethane-based, anthraquinone-based, anthracene-based, anthrapyridone-based, benzylidene-based, oxonol-based, pyrazolotriazole azo-based, pyridone azo-based, cyanine-based, phenothiazine-based, pyrrolopyrazole azomethine-based, xanthene-based, phthalocyanine-based, benzopyran-based, and indigo-based compounds.Examples of the sensitizer include Michler's ketone, 4,4'-bis(diethylamino)benzophenone, 2,5-bis(4'-diethylaminobenzal)cyclopentane, 2,6-bis(4'-diethylaminobenzal)cyclohexanone, 2,6-bis(4'-diethylaminobenzal)-4-methylcyclohexanone, 4,4'-bis(dimethylamino)chalcone, 4,4'-bis(diethylamino)chalcone, p-dimethylaminocinnamylideneindanone, p-dimethylaminobenzylideneindanone, and Non, 2-(p-dimethylaminophenylbiphenylene)benzothiazole, 2-(p-dimethylaminophenylvinylene)benzothiazole, 2-(p-dimethylaminophenylvinylene)isonaphthothiazole, 1,3-bis(4'-dimethylaminobenzal)acetone, 1,3-bis(4'-diethylaminobenzal)acetone, 3,3'-carbonyl-bis(7-diethylaminocoumarin), 3-acetyl-7-dimethylaminocoumarin, 3-ethoxycarbonyl-7-dimethylaminocoumarin Phosphorus, 3-benzyloxycarbonyl-7-dimethylaminocoumarin, 3-methoxycarbonyl-7-diethylaminocoumarin, 3-ethoxycarbonyl-7-diethylaminocoumarin (ethyl 7-(diethylamino)coumarin-3-carboxylate), N-phenyl-N'-ethylethanolamine, N-phenyldiethanolamine, N-p-tolyldiethanolamine, N-phenylethanolamine, 4-morpholinobenzophenone, isoamyl dimethylaminobenzoate, isoamyl diethylaminobenzoate Examples of sensitizing dyes include soamyl, 2-mercaptobenzimidazole, 1-phenyl-5-mercaptotetrazole, 2-mercaptobenzothiazole, 2-(p-dimethylaminostyryl)benzoxazole, 2-(p-dimethylaminostyryl)benzothiazole, 2-(p-dimethylaminostyryl)naphtho(1,2-d)thiazole, 2-(p-dimethylaminobenzoyl)styrene, diphenylacetamide, benzanilide, N-methylacetanilide, and 3',4'-dimethylacetanilide. Other sensitizing dyes may also be used. For details of sensitizing dyes, please refer to the descriptions in paragraphs 0161 to 0163 of JP-A-2016-027357, the contents of which are incorporated herein by reference.

[0125] When the resin composition contains a sensitizer, the content of the sensitizer is preferably 0.01 to 20 mass %, more preferably 0.1 to 15 mass %, and still more preferably 0.5 to 10 mass %, based on the total solid content of the resin composition. The sensitizer may be used alone or in combination of two or more types.

[0126] [Chain Transfer Agent] The resin composition of the present invention may contain a chain transfer agent. Chain transfer agents are defined, for example, in the Third Edition of the Polymer Dictionary (edited by the Society of Polymer Science, 2005), pages 683-684. Examples of chain transfer agents include those having -S-S-, -SO ２ Examples of compounds that can be used include compounds having -S-, -N-O-, SH, PH, SiH, and GeH, and dithiobenzoates, trithiocarbonates, dithiocarbamates, and xanthate compounds having a thiocarbonylthio group used in RAFT (Reversible Addition Fragmentation Chain Transfer) polymerization. These compounds can donate hydrogen to low-activity radicals to generate radicals, or can be oxidized and then deprotonated to generate radicals. Thiol compounds are particularly preferred.

[0127] In addition, the chain transfer agent may be a compound described in paragraphs 0152 to 0153 of WO 2015 / 199219, the contents of which are incorporated herein by reference.

[0128] When the resin composition contains a chain transfer agent, the content of the chain transfer agent is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.5 to 5 parts by mass, relative to 100 parts by mass of the total solid content of the resin composition. Only one type of chain transfer agent may be used, or two or more types may be used. When two or more types of chain transfer agents are used, the total content thereof is preferably within the above range.

[0129] In another preferred embodiment of the present invention, the resin composition of the present invention contains two or more polymerization initiators. Specifically, the resin composition of the present invention may contain a photopolymerization initiator and a thermal polymerization initiator described below.

[0130] By including a photopolymerization initiator and a thermal polymerization initiator described below, pattern formation by exposure becomes possible, and radical polymerization also proceeds more easily during curing by a heating step described below, which may improve performance such as chemical resistance. When a photopolymerization initiator and a thermal polymerization initiator described below are included, the content of the thermal polymerization initiator is preferably 20 to 70% by mass, and more preferably 30 to 60% by mass, relative to the total content of the photopolymerization initiator and the thermal polymerization initiator.

[0131] Inclusion of a photoradical polymerization initiator and a photoacid generator may improve performance such as resolution. When a photopolymerization initiator and a photoacid generator are included, the content ratio of the photoacid generator relative to the total content of the photopolymerization initiator and the photoacid generator is preferably 20 to 70 mass %, more preferably 30 to 60 mass %.

[0132] [Thermal Polymerization Initiator] Examples of the thermal polymerization initiator include a thermal radical polymerization initiator. A thermal radical polymerization initiator is a compound that generates radicals by thermal energy and initiates or promotes the polymerization reaction of a polymerizable compound. Addition of a thermal radical polymerization initiator can also promote the polymerization reaction of the resin and the polymerizable compound, thereby further improving solvent resistance.

[0133] Specific examples of the thermal radical polymerization initiator include compounds described in paragraphs 0074 to 0118 of JP-A-2008-063554, the contents of which are incorporated herein by reference.

[0134] When a thermal polymerization initiator is contained, the content thereof is preferably 0.1 to 30 mass% relative to the total solid content of the resin composition, more preferably 0.1 to 20 mass%, and even more preferably 0.5 to 15 mass%. Only one type of thermal polymerization initiator may be contained, or two or more types may be contained. When two or more types of thermal polymerization initiators are contained, it is preferable that the total amount is in the above range.

[0135] <Base Generator> The resin composition of the present invention may contain a base generator. Here, the base generator is a compound capable of generating a base by physical or chemical action. Preferred base generators include thermal base generators and photobase generators. In particular, when the resin composition contains a precursor of a cyclized resin, the resin composition preferably contains a base generator. By containing a thermal base generator in the resin composition, the cyclization reaction of the precursor can be promoted, for example, by heating, and the mechanical properties and chemical resistance of the cured product can be improved, resulting in excellent performance as an interlayer insulating film for a rewiring layer included in a semiconductor package. The base generator may be an ionic base generator or a nonionic base generator. Examples of the base generated from the base generator include secondary amines and tertiary amines. The base generator is not particularly limited, and known base generators can be used. Examples of known base generators include carbamoyl oxime compounds, carbamoyl hydroxylamine compounds, carbamic acid compounds, formamide compounds, acetamide compounds, carbamate compounds, benzyl carbamate compounds, nitrobenzyl carbamate compounds, sulfonamide compounds, imidazole derivative compounds, amine imide compounds, pyridine derivative compounds, α-aminoacetophenone derivative compounds, quaternary ammonium salt derivative compounds, iminium salts, pyridinium salts, α-lactone ring derivative compounds, amine imide compounds, phthalimide derivative compounds, and acyloxyimino compounds. Specific examples of non-ionic base generators include the compounds described in paragraphs 0249 to 0275 of WO 2022 / 145355. The above descriptions are incorporated herein by reference.

[0136] Examples of the base generator include, but are not limited to, the following compounds:

[0137]

[0138] The molecular weight of the nonionic base generator is preferably 800 or less, more preferably 600 or less, and even more preferably 500 or less. The lower limit is preferably 100 or more, more preferably 200 or more, and even more preferably 300 or more.

[0139] Specific preferred compounds for the ionic base generator include, for example, the compounds described in paragraphs 0148 to 0163 of WO 2018 / 038002.

[0140] Specific examples of ammonium salts include, but are not limited to, the following compounds:

[0141] Specific examples of iminium salts include, but are not limited to, the following compounds:

[0142] The base generator is preferably an amine in which the amino group is protected with a t-butoxycarbonyl group, from the viewpoints of storage stability and generating a base by deprotection during curing.

[0143] Examples of amine compounds protected by a t-butoxycarbonyl group include ethanolamine, 3-amino-1-propanol, 1-amino-2-propanol, 2-amino-1-propanol, 4-amino-1-butanol, 2-amino-1-butanol, 1-amino-2-butanol, 3-amino-2,2-dimethyl-1-propanol, 4-amino-2-methyl-1-butanol, valinol, 3-amino-1,2-propanediol, and 2-amino-1,3-propanediol. alcohol, tyramine, norephedrine, 2-amino-1-phenyl-1,3-propanediol, 2-aminocyclohexanol, 4-aminocyclohexanol, 4-aminocyclohexaneethanol, 4-(2-aminoethyl)cyclohexanol, N-methylethanolamine, 3-(methylamino)-1-propanol, 3-(isopropylamino)propanol, N-cyclohexylethanolamine, α-[2-(methylamino)ethyl]benzyl alcohol, diethanolamine diamine, diisopropanolamine, 3-pyrrolidinol, 2-pyrrolidinemethanol, 4-hydroxypiperidine, 3-hydroxypiperidine, 4-hydroxy-4-phenylpiperidine, 4-(3-hydroxyphenyl)piperidine, 4-piperidinemethanol, 3-piperidinemethanol, 2-piperidinemethanol, 4-piperidineethanol, 2-piperidineethanol, 2-(4-piperidyl)-2-propanol, 1,4-butanolbis(3-aminopropyl)ethanol ter, 1,2-bis(2-aminoethoxy)ethane, 2,2'-oxybis(ethylamine), 1,14-diamino-3,6,9,12-tetraoxatetradecane, 1-aza-15-crown-5-ether, diethylene glycol bis(3-aminopropyl)ether, 1,11-diamino-3,6,9-trioxaundecane, or compounds in which the amino group of an amino acid or a derivative thereof is protected with a t-butoxycarbonyl group, but are not limited to these.

[0144] When the resin composition contains a base generator, the content of the base generator is preferably 0.1 to 50 parts by mass per 100 parts by mass of the resin in the resin composition. The lower limit is more preferably 0.3 parts by mass or more, and even more preferably 0.5 parts by mass or more. The upper limit is more preferably 30 parts by mass or less, even more preferably 20 parts by mass or less, even more preferably 10 parts by mass or less, even more preferably 5 parts by mass or less, and particularly preferably 4 parts by mass or less. One or more types of base generators can be used. When two or more types are used, the total amount is preferably within the above range.

[0145] <Solvent> The resin composition of the present invention contains a solvent. Any known solvent can be used as the solvent. The solvent is preferably an organic solvent. Examples of the organic solvent include compounds such as esters, ethers, ketones, cyclic hydrocarbons, sulfoxides, amides, ureas, and alcohols.

[0146] Examples of esters include ethyl acetate, n-butyl acetate, isobutyl acetate, hexyl acetate, amyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, γ-valerolactone, alkyl alkyloxyacetates (for example, methyl alkyloxyacetate, ethyl alkyloxyacetate, butyl alkyloxyacetate (for example, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.)), 3-alkyloxypropionic acid alkyl esters (for example, methyl 3-alkyloxypropionate, ethyl 3-alkyloxypropionate (for example, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxypropionic acid alkyl esters ...alkyloxypropionate, ethyl 3-alkyloxypropionate, 2-alkyloxypropionic acid alkyl esters (for example, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxypropionic acid alkyl esters (for example, methyl 3-alkyloxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxypropionic acid alkyl esters (for example, methyl 3- Preferred examples thereof include alkyl esters of alkyloxypropionates (e.g., methyl 2-alkyloxypropionate, ethyl 2-alkyloxypropionate, propyl 2-alkyloxypropionate (e.g., methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), methyl 2-alkyloxy-2-methylpropionate and ethyl 2-alkyloxy-2-methylpropionate (e.g., methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate), methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate, ethyl hexanoate, ethyl heptanoate, dimethyl malonate, and diethyl malonate.

[0147] Suitable examples of ethers include ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether, ethylene glycol monobutyl ether acetate, diethylene glycol ethyl methyl ether, propylene glycol monopropyl ether acetate, and dipropylene glycol dimethyl ether.

[0148] Suitable examples of ketones include methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, 3-methylcyclohexanone, levoglucosenone, and dihydrolevoglucosenone.

[0149] Suitable examples of cyclic hydrocarbons include aromatic hydrocarbons such as toluene, xylene, and anisole, and cyclic terpenes such as limonene.

[0150] A preferred example of the sulfoxides is dimethyl sulfoxide.

[0151] Preferred examples of the amides include N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, N,N-dimethylisobutyramide, 3-methoxy-N,N-dimethylpropionamide, 3-butoxy-N,N-dimethylpropionamide, N-formylmorpholine, and N-acetylmorpholine.

[0152] Preferred examples of ureas include N,N,N',N'-tetramethylurea and 1,3-dimethyl-2-imidazolidinone.

[0153] Examples of alcohols include methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 1-pentanol, 1-hexanol, benzyl alcohol, ethylene glycol monomethyl ether, 1-methoxy-2-propanol, 2-ethoxyethanol, diethylene glycol monoethyl ether, diethylene glycol monohexyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether, polyethylene glycol monomethyl ether, polypropylene glycol, tetraethylene glycol, ethylene glycol monobutyl ether, ethylene glycol monobenzyl ether, ethylene glycol monophenyl ether, methylphenyl carbinol, n-amyl alcohol, methyl amyl alcohol, and diacetone alcohol.

[0154] From the viewpoint of improving the properties of the coated surface, it is also preferable to mix two or more kinds of solvents.

[0155] In the present invention, one solvent selected from methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, γ-butyrolactone, γ-valerolactone, 3-methoxy-N,N-dimethylpropionamide, toluene, dimethyl sulfoxide, ethyl carbitol acetate, butyl carbitol acetate, N-methyl-2-pyrrolidone, propylene glycol methyl ether, propylene glycol methyl ether acetate, levoglucosenone, and dihydrolevoglucosenone, or a mixed solvent composed of two or more solvents, is preferred. Particularly preferred are a combination of dimethyl sulfoxide and γ-butyrolactone, a combination of dimethyl sulfoxide and γ-valerolactone, a combination of 3-methoxy-N,N-dimethylpropionamide and γ-butyrolactone, a combination of 3-methoxy-N,N-dimethylpropionamide, γ-butyrolactone and dimethyl sulfoxide, or a combination of N-methyl-2-pyrrolidone and ethyl lactate. An embodiment in which toluene is further added to these combined solvents in an amount of approximately 1 to 10% by mass, based on the total mass of the solvent, is also a preferred embodiment of the present invention. In particular, from the viewpoint of the storage stability of the resin composition, an embodiment in which γ-valerolactone is included as a solvent is also a preferred embodiment of the present invention. In such an embodiment, the content of γ-valerolactone relative to the total mass of the solvent is preferably 50% by mass or more, more preferably 60% by mass or more, and even more preferably 70% by mass or more. The upper limit of the above content is not particularly limited and may be 100% by mass. The above content may be determined taking into consideration the solubility of components such as the specific resin contained in the resin composition, etc. Furthermore, when dimethyl sulfoxide and γ-valerolactone are used in combination, the solvent preferably contains 60 to 90 mass% of γ-valerolactone and 10 to 40 mass% of dimethyl sulfoxide, more preferably 70 to 90 mass% of γ-valerolactone and 10 to 30 mass% of dimethyl sulfoxide, and even more preferably 75 to 85 mass% of γ-valerolactone and 15 to 25 mass% of dimethyl sulfoxide, relative to the total mass of the solvent.

[0156] From the viewpoint of coatability, the content of the solvent is preferably an amount such that the total solids concentration of the resin composition of the present invention is 5 to 80 mass %, more preferably an amount such that the total solids concentration is 5 to 75 mass %, even more preferably an amount such that the total solids concentration is 10 to 70 mass %, and even more preferably an amount such that the total solids concentration is 20 to 70 mass %. The solvent content may be adjusted depending on the desired thickness of the coating film and the coating method. When two or more solvents are contained, the total amount of the solvents is preferably within the above range.

[0157] <Metal Adhesion Improver> The resin composition of the present invention preferably contains a metal adhesion improver from the viewpoint of improving adhesion to metal materials used in electrodes, wiring, etc. Examples of metal adhesion improvers include silane coupling agents having an alkoxysilyl group, aluminum-based adhesion aids, titanium-based adhesion aids, compounds having a sulfonamide structure, compounds having a thiourea structure, phosphoric acid derivative compounds, β-ketoester compounds, and amino compounds.

[0158] [Silane Coupling Agent] Examples of silane coupling agents include the compounds described in paragraph 0316 of WO 2021 / 112189 and the compounds described in paragraphs 0067 to 0078 of JP 2018-173573 A, the contents of which are incorporated herein by reference. It is also preferable to use two or more different silane coupling agents, as described in paragraphs 0050 to 0058 of JP 2011-128358 A. It is also preferable to use the following compounds as the silane coupling agent. In the formula below, Me represents a methyl group, and Et represents an ethyl group. Furthermore, the following R represents a structure derived from a blocking agent in a blocked isocyanate group. The blocking agent may be selected depending on the desorption temperature, and examples include alcohol compounds, phenol compounds, pyrazole compounds, triazole compounds, lactam compounds, and active methylene compounds. For example, caprolactam is preferred from the viewpoint of achieving a desorption temperature of 160 to 180°C. Commercially available products of such compounds include X-12-1293 (manufactured by Shin-Etsu Chemical Co., Ltd.).

[0159]

[0160] Other silane coupling agents include, for example, vinyltrimethoxysilane, vinyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, N-2- Examples of suitable silane coupling agents include (aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N-(1,3-dimethylbutylidene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, tris-(trimethoxysilylpropyl)isocyanurate, 3-ureidopropyltrialkoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, and 3-trimethoxysilylpropylsuccinic anhydride. These may be used alone or in combination of two or more. Furthermore, oligomeric compounds having multiple alkoxysilyl groups may also be used as silane coupling agents. Examples of such oligomeric compounds include compounds containing a repeating unit represented by the following formula (S-1): In formula (S-1), R Ｓ１ represents a monovalent organic group, R Ｓ２ represents a hydrogen atom, a hydroxy group or an alkoxy group, and n represents an integer of 0 to 2. Ｓ１is preferably a structure containing a polymerizable group. Examples of the polymerizable group include a group having an ethylenically unsaturated bond, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group. Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (for example, a vinylphenyl group), a (meth)acrylamide group, and a (meth)acryloyloxy group. A vinylphenyl group, a (meth)acrylamide group, or a (meth)acryloyloxy group is preferred, a vinylphenyl group or a (meth)acryloyloxy group is more preferred, and a (meth)acryloyloxy group is even more preferred. R Ｓ２ is preferably an alkoxy group, more preferably a methoxy group or an ethoxy group. n represents an integer of 0 to 2, preferably 1. Here, the structures of the multiple repeating units represented by formula (S-1) contained in the oligomer-type compound may be the same. Here, of the multiple repeating units represented by formula (S-1) contained in the oligomer-type compound, it is preferable that n is 1 or 2 in at least one, more preferably that n is 1 or 2 in at least two, and even more preferably that n is 1 in at least two. Such oligomer-type compounds can be commercially available products, and an example of a commercially available product is KR-513 (manufactured by Shin-Etsu Chemical Co., Ltd.).

[0161] [Aluminum-Based Adhesion Aid] Examples of aluminum-based adhesion aids include aluminum tris(ethylacetoacetate), aluminum tris(acetylacetonate), and ethylacetoacetate aluminum diisopropylate.

[0162] Other metal adhesion improvers that can be used include the compounds described in paragraphs 0046 to 0049 of JP-A-2014-186186 and the sulfide-based compounds described in paragraphs 0032 to 0043 of JP-A-2013-072935, the contents of which are incorporated herein by reference.

[0163] The content of the metal adhesion improver is preferably 0.01 to 30 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.5 to 5 parts by mass, relative to 100 parts by mass of the specific resin. By ensuring that the content is equal to or greater than the above lower limit, the adhesion between the pattern and the metal layer is improved, and by ensuring that the content is equal to or less than the above upper limit, the heat resistance and mechanical properties of the pattern are improved. Only one type of metal adhesion improver may be used, or two or more types may be used. When two or more types are used, it is preferable that the total amount is within the above range.

[0164] <Migration Inhibitor> The resin composition of the present invention preferably further contains a migration inhibitor. By including a migration inhibitor, for example, when the resin composition is applied to a metal layer (or metal wiring) to form a film, migration of metal ions derived from the metal layer (or metal wiring) into the film can be effectively inhibited.

[0165] The migration inhibitor is not particularly limited, but examples thereof include compounds having a heterocycle (pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyrazole ring, isoxazole ring, isothiazole ring, tetrazole ring, pyridine ring, pyridazine ring, pyrimidine ring, pyrazine ring, piperidine ring, piperazine ring, morpholine ring, 2H-pyran ring, 6H-pyran ring, triazine ring), thioureas and compounds having a sulfanyl group, hindered phenol compounds, salicylic acid derivative compounds, and hydrazide derivative compounds. In particular, triazole compounds such as 1,2,4-triazole, benzotriazole, 3-amino-1,2,4-triazole, and 3,5-diamino-1,2,4-triazole, and tetrazole compounds such as 1H-tetrazole, 5-phenyltetrazole, and 5-amino-1H-tetrazole are preferably used.

[0166] As the migration inhibitor, an ion trapping agent that traps anions such as halogen ions can also be used.

[0167] Other migration inhibitors include the rust inhibitors described in paragraph 0094 of JP-A-2013-015701, the compounds described in paragraphs 0073 to 0076 of JP-A-2009-283711, the compounds described in paragraph 0052 of JP-A-2011-059656, the compounds described in paragraphs 0114, 0116 and 0118 of JP-A-2012-194520, and the compounds described in paragraph 0166 of WO 2015 / 199219. The contents of this specification are incorporated herein by reference.

[0168] Specific examples of the migration inhibitor include the following compounds.

[0169]

[0170] When the resin composition of the present invention contains a migration inhibitor, the content of the migration inhibitor is preferably 0.01 to 5.0 mass%, more preferably 0.05 to 2.0 mass%, and even more preferably 0.1 to 1.0 mass%, based on the total solid content of the resin composition.

[0171] The migration inhibitor may be one kind or two or more kinds. When two or more kinds of migration inhibitors are used, the total amount thereof is preferably within the above range.

[0172] <Light absorber> The resin composition of the present invention preferably contains a compound (light absorber) whose absorbance at the exposure wavelength is reduced by exposure. Examples of the light absorber include the compounds described in paragraphs 0159 to 0183 of WO 2022 / 202647 and the compounds described in paragraphs 0088 to 0108 of JP 2019-206689 A. The contents of these compounds are incorporated herein by reference.

[0173] <Polymerization Inhibitor> The resin composition of the present invention preferably contains a polymerization inhibitor. Examples of the polymerization inhibitor include phenolic compounds, quinone compounds, amino compounds, N-oxyl free radical compounds, nitro compounds, nitroso compounds, heteroaromatic ring compounds, and metal compounds.

[0174] Specific examples of the polymerization inhibitor include the compounds described in paragraph 0310 of WO 2021 / 112189, p-hydroquinone, o-hydroquinone, 4-hydroxy-2,2,6,6-tetramethylpiperidine 1-oxyl free radical, phenoxazine, 1,4,4-trimethyl-2,3-diazabicyclo[3.2.2]non-2-ene-N,N-dioxide, and the like, the contents of which are incorporated herein by reference.

[0175] When the resin composition of the present invention contains a polymerization inhibitor, the content of the polymerization inhibitor is preferably 0.01 to 20 mass%, more preferably 0.02 to 15 mass%, and even more preferably 0.05 to 10 mass%, based on the total solid content of the resin composition.

[0176] The polymerization inhibitor may be one kind or two or more kinds. When two or more kinds of polymerization inhibitors are used, the total amount thereof is preferably within the above range.

[0177] <Other Additives> The resin composition of the present invention may contain various additives, as needed, within the scope of obtaining the effects of the present invention, such as surfactants, higher fatty acid derivatives, thermal polymerization initiators, inorganic particles, ultraviolet absorbers, organic titanium compounds, antioxidants, photoacid generators, anti-aggregation agents, phenolic compounds, other polymer compounds, plasticizers, and other auxiliary agents (e.g., antifoaming agents, flame retardants, etc.). By appropriately incorporating these components, it is possible to adjust properties such as film physical properties. For details of these components, please refer to, for example, the descriptions in paragraphs 0183 and after of JP 2012-003225 A (corresponding to paragraph 0237 of U.S. Patent Application Publication No. 2013 / 0034812 ), and the descriptions in paragraphs 0101 to 0104 and 0107 to 0109 of JP 2008-250074 A, the contents of which are incorporated herein by reference. When these additives are blended, the total content thereof is preferably 3% by mass or less of the solid content of the resin composition of the present invention.

[0178] [Surfactant] Various surfactants can be used as the surfactant, such as a fluorine-based surfactant, a silicone-based surfactant, a hydrocarbon-based surfactant, etc. The surfactant may be a nonionic surfactant, a cationic surfactant, or an anionic surfactant.

[0179] By adding a surfactant to the resin composition of the present invention, the liquid properties (particularly fluidity) of the coating liquid composition when prepared are further improved, and the uniformity of the coating thickness and the liquid saving can be further improved. That is, when a film is formed using a coating liquid containing a surfactant, the interfacial tension between the surface to be coated and the coating liquid is reduced, improving the wettability of the surface to be coated and the coatability of the surface to be coated. Therefore, it is possible to more suitably form a uniform film with small thickness unevenness.

[0180] Examples of fluorine-based surfactants include the compounds described in paragraph 0328 of WO 2021 / 112189, the contents of which are incorporated herein by reference. As the fluorine-based surfactant, fluorine-containing polymer compounds containing a repeating unit derived from a (meth)acrylate compound having a fluorine atom and a repeating unit derived from a (meth)acrylate compound having two or more (preferably five or more) alkyleneoxy groups (preferably ethyleneoxy groups, propyleneoxy groups) can also be preferably used, and examples thereof include the following compounds.

[0181] The weight-average molecular weight of the above compound is preferably 3,000 to 50,000, and more preferably 5,000 to 30,000. As the fluorosurfactant, a fluorine-containing polymer having an ethylenically unsaturated group in the side chain can also be used. Specific examples include the compounds described in paragraphs 0050 to 0090 and 0289 to 0295 of JP 2010-164965 A, the contents of which are incorporated herein by reference. Commercially available products include Megafac RS-101, RS-102, and RS-718K manufactured by DIC Corporation.

[0182] The fluorine content in the fluorine-containing surfactant is preferably 3 to 40% by mass, more preferably 5 to 30% by mass, and particularly preferably 7 to 25% by mass. A fluorine-containing surfactant having a fluorine content within this range is effective in terms of uniformity of the thickness of the coating film and liquid saving, and also has good solubility in the composition.

[0183] Examples of silicone surfactants, hydrocarbon surfactants, nonionic surfactants, cationic surfactants, and anionic surfactants include the compounds described in paragraphs 0329 to 0334 of WO 2021 / 112189, the contents of which are incorporated herein by reference.

[0184] The surfactant may be used alone or in combination of two or more. The content of the surfactant is preferably 0.001 to 2.0 mass %, more preferably 0.005 to 1.0 mass %, based on the total solid content of the composition.

[0185] [Inorganic Particles] Specific examples of inorganic particles include calcium carbonate, calcium phosphate, silica, kaolin, talc, titanium dioxide, alumina, barium sulfate, calcium fluoride, lithium fluoride, zeolite, molybdenum sulfide, and glass.

[0186] The average particle size of the inorganic particles is preferably 0.01 to 2.0 μm, more preferably 0.02 to 1.5 μm, even more preferably 0.03 to 1.0 μm, and particularly preferably 0.04 to 0.5 μm. The above average particle size of the inorganic particles is the primary particle size and also the volume average particle size. The volume average particle size can be measured, for example, by dynamic light scattering using a Nanotrac WAVE II EX-150 (manufactured by Nikkiso Co., Ltd.). If the above measurement is difficult, it can also be measured by centrifugal sedimentation light transmission method, X-ray transmission method, or laser diffraction / scattering method.

[0187] [Organotitanium Compound] When the resin composition contains an organotitanium compound, a resin layer having excellent chemical resistance can be formed even when cured at low temperatures.

[0188] Usable organic titanium compounds include those in which an organic group is bonded to a titanium atom via a covalent bond or an ionic bond. Specific examples of organic titanium compounds are shown below in I) to VII): I) Titanium chelate compounds: Titanium chelate compounds having two or more alkoxy groups are more preferred because they provide good storage stability to the resin composition and a good curing pattern. Specific examples include titanium bis(triethanolamine) diisopropoxide, titanium di(n-butoxide) bis(2,4-pentanedionate), titanium diisopropoxide bis(2,4-pentanedionate), titanium diisopropoxide bis(tetramethylheptanedionate), and titanium diisopropoxide bis(ethylacetoacetate). II) Tetraalkoxytitanium compounds: for example, titanium tetra(n-butoxide), titanium tetraethoxide, titanium tetra(2-ethylhexoxide), titanium tetraisobutoxide, titanium tetraisopropoxide, titanium tetramethoxide, titanium tetramethoxypropoxide, titanium tetramethylphenoxide, titanium tetra(n-nonyloxide), titanium tetra(n-propoxide), titanium tetrastearyloxide, titanium tetrakis[bis{2,2-(allyloxymethyl)butoxide}], etc. III) Titanocene compounds: for example, pentamethylcyclopentadienyltitanium trimethoxide, bis(η5-2,4-cyclopentadien-1-yl)bis(2,6-difluorophenyl)titanium, bis(η5-2,4-cyclopentadien-1-yl)bis(2,6-difluoro-3-(1H-pyrrol-1-yl)phenyl)titanium, etc. IV) Monoalkoxytitanium compounds: for example, titanium tris(dioctylphosphate)isopropoxide, titanium tris(dodecylbenzenesulfonate)isopropoxide, etc. V) Titanium oxide compounds: for example, titanium oxide bis(pentanedionate), titanium oxide bis(tetramethylheptanedionate), phthalocyanine titanium oxide, etc.VI) Titanium tetraacetylacetonate compounds: for example, titanium tetraacetylacetonate, etc. VII) Titanate coupling agents: for example, isopropyl tridodecylbenzenesulfonyl titanate, etc.

[0189] Among these, from the viewpoint of better chemical resistance, the organic titanium compound is preferably at least one compound selected from the group consisting of I) titanium chelate compounds, II) tetraalkoxytitanium compounds, and III) titanocene compounds. In particular, titanium diisopropoxide bis(ethylacetoacetate), titanium tetra(n-butoxide), and bis(η5-2,4-cyclopentadien-1-yl)bis(2,6-difluoro-3-(1H-pyrrol-1-yl)phenyl)titanium are preferred.

[0190] It is also preferable to contain a compound represented by the following formula (T-1) as the organotitanium compound or in place of the organotitanium compound. In formula (T-1), M is titanium, zirconium, or hafnium, l1 is an integer of 0 to 2, l2 is 0 or 1, l1 + l2 × 2 is an integer of 0 to 2, m is an integer of 0 to 4, n is an integer of 0 to 2, l1 + l2 + m + n × 2 = 4, and R １１ are each independently a substituted or unsubstituted cyclopentadienyl group, a substituted or unsubstituted alkoxy group, or a substituted or unsubstituted phenoxy group; R １２ is a substituted or unsubstituted hydrocarbon group, R ２ are each independently a group containing a structure represented by the following formula (T-2), and R ３ are each independently a group containing a structure represented by the following formula (T-2), Ａ are each independently an oxygen atom or a sulfur atom. In formula (T-2), X １ ~X ３ each independently represents -C(-*)= or -N=, * represents a bonding site to another structure, and # represents a bonding site to a metal atom.

[0191] In formula (T-1), from the viewpoint of storage stability of the composition, M is preferably titanium. In formula (T-1), an embodiment in which l1 and l2 are 0 is also one of the preferred embodiments of the present invention. In formula (T-1), m is preferably 2 or 4, and more preferably 2. In formula (T-1), n ​​is preferably 1 or 2, and more preferably 1. Here, it is also preferable that in formula (T-1), l1 and l2 are 0, and m is 0, 2, or 4.

[0192] In formula (T-1), from the viewpoint of the stability of the specific metal complex, R １１ is preferably a substituted or unsubstituted cyclopentadienyl ligand. １１ The cyclopentadienyl group, alkoxy group and phenoxy group in the formula (I) may be substituted, but an embodiment in which they are unsubstituted is also one of the preferred embodiments of the present invention.

[0193] In formula (T-1), R １２ is preferably a hydrocarbon group having 1 to 20 carbon atoms, and more preferably a hydrocarbon group having 2 to 10 carbon atoms. １２ The hydrocarbon group in may be either an aliphatic hydrocarbon group or an aromatic hydrocarbon group, but an aromatic hydrocarbon group is preferred. The aliphatic hydrocarbon group may be either a saturated aliphatic hydrocarbon group or an unsaturated aliphatic hydrocarbon group, but a saturated aliphatic hydrocarbon group is preferred. The aromatic hydrocarbon group is preferably an aromatic hydrocarbon group having 6 to 20 carbon atoms, more preferably an aromatic hydrocarbon group having 6 to 10 carbon atoms, and even more preferably a phenylene group. R １２ The substituent in R is preferably a monovalent substituent, such as a halogen atom. １２ When R is an aromatic hydrocarbon group, it may have an alkyl group as a substituent. １２ is preferably an unsubstituted phenylene group. １２ The phenylene group in is preferably a 1,2-phenylene group.

[0194] In formula (T-1), m is 2 or more, and R ２ If two or more are included,２ In formula (T-1), n ​​is 2 or more, and R ３ If two or more are included, ３ The structures may be the same or different.

[0195] In formula (T-2), X １ ~X ３ each independently represents -C(-*)= or -N=, and it is preferable that at least one represents -C(-*)=, and it is more preferable that at least two represent -C(-*)=.

[0196] Specific examples of the compound represented by formula (T-1) include compounds I-5 to I-8 in the examples, but are not limited to these.

[0197] When an organotitanium compound is contained, its content is preferably 0.05 to 10 parts by mass, and more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the specific resin. When the content is 0.05 part by mass or more, the heat resistance and chemical resistance of the obtained cured pattern are improved, and when it is 10 parts by mass or less, the storage stability of the composition is improved.

[0198] When an organotitanium compound is contained, its content is preferably 0.05 to 10 parts by mass, and more preferably 0.1 to 2 parts by mass, relative to 100 parts by mass of the specific resin. When the content is 0.05 part by mass or more, the heat resistance and chemical resistance of the obtained cured pattern are improved, and when it is 10 parts by mass or less, the storage stability of the composition is superior.

[0199] Other additives include compounds described in paragraphs 0249 to 0282 and 0316 to 0358 of WO 2022 / 145355, the disclosures of which are incorporated herein by reference.

[0200] <Characteristics of Resin Composition> The viscosity of the resin composition of the present invention can be adjusted by the solid content concentration of the resin composition. ２ / s~12,000mm ２ / s is preferred, and 2,000 mm ２ / s~10,000mm ２ / s is more preferable, and 2,500 mm ２ / s~8,000mm ２ Within the above range, it is easy to obtain a highly uniform coating film. ２ If the thickness is more than 12,000 mm / s, it is easy to apply the coating to a thickness required for an insulating film for rewiring, for example. ２ If the viscosity is less than 1 / s, a coating film with excellent surface condition can be obtained.

[0201] <Restrictions on substances contained in the resin composition> The water content of the resin composition of the present invention is preferably less than 2.0% by mass, more preferably less than 1.5% by mass, and even more preferably less than 1.0% by mass. If it is less than 2.0%, the storage stability of the resin composition is improved. Methods for maintaining the water content include adjusting the humidity under storage conditions and reducing the porosity of the storage container during storage.

[0202] From the viewpoint of insulating properties, the metal content of the resin composition of the present invention is preferably less than 5 mass ppm (parts per million), more preferably less than 1 mass ppm, and even more preferably less than 0.5 mass ppm. Examples of metals include sodium, potassium, magnesium, calcium, iron, copper, chromium, and nickel, but metals contained as complexes of organic compounds and metals are excluded. When multiple metals are contained, the total amount of these metals is preferably within the above range.

[0203] Furthermore, examples of methods for reducing metal impurities unintentionally contained in the resin composition of the present invention include selecting raw materials with a low metal content as raw materials for constituting the resin composition of the present invention, filtering the raw materials for constituting the resin composition of the present invention, and lining the inside of the apparatus with polytetrafluoroethylene or the like to perform distillation under conditions that minimize contamination as much as possible.

[0204] Considering the use of the resin composition of the present invention as a semiconductor material, the content of halogen atoms is preferably less than 500 ppm by mass, more preferably less than 300 ppm by mass, and even more preferably less than 200 ppm by mass, from the viewpoint of wiring corrosion. In particular, those present in the form of halogen ions are preferably less than 5 ppm by mass, more preferably less than 1 ppm by mass, and even more preferably less than 0.5 ppm by mass. Examples of halogen atoms include chlorine atoms and bromine atoms. It is preferable that the total of chlorine atoms and bromine atoms, or chlorine ions and bromine ions, is within the above-mentioned range. Preferred methods for adjusting the content of halogen atoms include ion exchange treatment.

[0205] A conventionally known container can be used as a container for storing the resin composition of the present invention. For the purpose of preventing impurities from being mixed into the raw materials or the resin composition of the present invention, it is also preferable to use a multi-layer bottle whose inner wall is made of six types of six resin layers, or a bottle with a seven-layer structure made of six types of resin. Examples of such containers include the container described in JP 2015-123351 A.

[0206] <Cured Product of Resin Composition> A cured product of the resin composition can be obtained by curing the resin composition of the present invention. The cured product of the present invention is a cured product obtained by curing the resin composition. The resin composition is preferably cured by heating, with a heating temperature of 120°C to 400°C being more preferred, 140°C to 380°C being even more preferred, and 170°C to 350°C being particularly preferred. The form of the cured product of the resin composition is not particularly limited, and can be selected depending on the application, such as a film, rod, sphere, or pellet. In the present invention, the cured product is preferably in the form of a film. By patterning the resin composition, the shape of the cured product can be selected depending on the application, such as forming a protective film on a wall surface, forming via holes for electrical conductivity, adjusting impedance, capacitance, or internal stress, or imparting heat dissipation functionality. The film thickness of the cured product (film made of the cured product) is preferably 0.5 μm or more and 150 μm or less. The shrinkage rate when the resin composition of the present invention is cured is preferably 50% or less, more preferably 45% or less, and even more preferably 40% or less. Here, the shrinkage rate refers to the percentage of change in volume of the resin composition before and after curing, and can be calculated by the following formula: Shrinkage rate [%] = 100 - (volume after curing / volume before curing) x 100

[0207] <Characteristics of cured product of resin composition> The imidization reaction rate of the cured product of the resin composition of the present invention is preferably 70% or more, more preferably 80% or more, and even more preferably 90% or more. If it is 70% or more, the cured product may have excellent mechanical properties. The elongation at break of the cured product of the resin composition of the present invention is preferably 30% or more, more preferably 40% or more, and even more preferably 50% or more. The glass transition temperature (Tg) of the cured product of the resin composition of the present invention is preferably 180°C or more, more preferably 210°C or more, and even more preferably 230°C or more.

[0208] <Preparation of Resin Composition> The resin composition of the present invention can be prepared by mixing the above-mentioned components. The mixing method is not particularly limited, and can be carried out by a conventionally known method. Examples of the mixing method include mixing with a stirring blade, mixing with a ball mill, and mixing by rotating a tank. The temperature during mixing is preferably 10 to 30°C, more preferably 15 to 25°C.

[0209] Filtration using a filter is preferably performed to remove foreign matter such as dust and fine particles from the resin composition of the present invention. The filter pore size is, for example, preferably 5 μm or less, more preferably 1 μm or less, even more preferably 0.5 μm or less, and even more preferably 0.1 μm or less. The filter material is preferably polytetrafluoroethylene, polyethylene, or nylon. When the filter material is polyethylene, HDPE (high-density polyethylene) is more preferable. The filter may be pre-washed with an organic solvent. In the filter filtration process, multiple types of filters may be connected in series or parallel. When multiple types of filters are used, filters with different pore sizes or materials may be combined. An example of a connection mode is a mode in which an HDPE filter with a pore size of 1 μm is connected in series as the first stage and an HDPE filter with a pore size of 0.2 μm is connected in series as the second stage. Various materials may also be filtered multiple times. When filtration is performed multiple times, circulating filtration may be used. Filtration may also be performed under pressure. When filtering under pressure, the pressure to be applied is preferably 0.01 MPa or more and 1.0 MPa or less, more preferably 0.03 MPa or more and 0.9 MPa or less, even more preferably 0.05 MPa or more and 0.7 MPa or less, and even more preferably 0.05 MPa or more and 0.5 MPa or less. In addition to filtering using a filter, a process of removing impurities using an adsorbent may be performed. Filter filtration and a process of removing impurities using an adsorbent may be combined. Known adsorbents can be used as the adsorbent. Examples include inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon. After filtering using a filter, the resin composition filled in a bottle may be subjected to a degassing process by placing it under reduced pressure.

[0210] (Method for producing a cured product) The method for producing a cured product of the present invention preferably includes a film-forming step in which a resin composition is applied to a substrate to form a film. The method for producing a cured product more preferably includes the film-forming step, an exposure step in which the film formed in the film-forming step is selectively exposed to light, and a development step in which the film exposed in the exposure step is developed using a developer to form a pattern. The method for producing a cured product particularly preferably includes the film-forming step, the exposure step, the development step, and at least one of a heating step in which the pattern obtained in the development step is heated and a post-development exposure step in which the pattern obtained in the development step is exposed to light. The method for producing a cured product also preferably includes the film-forming step and a step of heating the film. Details of each step are described below.

[0211] <Film Forming Step> The resin composition of the present invention can be used in a film forming step of applying the resin composition to a substrate to form a film. The method for producing a cured product of the present invention preferably includes a film forming step of applying the resin composition to a substrate to form a film.

[0212] [Substrate] The type of substrate can be appropriately determined depending on the application and is not particularly limited. Examples of substrates include semiconductor production substrates such as silicon, silicon nitride, polysilicon, silicon oxide, and amorphous silicon, quartz, glass, optical films, ceramic materials, vapor deposition films, magnetic films, reflective films, metal substrates such as Ni, Cu, Cr, and Fe (for example, substrates formed from metal and substrates on which a metal layer is formed by, for example, plating or vapor deposition), paper, SOG (Spin On Glass), TFT (Thin Film Transistor) array substrates, mold substrates, and plasma display panel (PDP) electrode plates. Substrates are particularly preferably semiconductor production substrates, with silicon substrates, Cu substrates, and mold substrates being more preferred. These substrates may have a surface layer such as an adhesion layer or an oxide layer formed by hexamethyldisilazane (HMDS) or the like. The shape of the substrate is not particularly limited and may be circular or rectangular. The size of the substrate is preferably, for example, a diameter of 100 to 450 mm, more preferably 200 to 450 mm, if it is circular. If it is rectangular, the length of the short side is preferably, for example, 100 to 1000 mm, more preferably 200 to 700 mm. As the substrate, for example, a plate-shaped, preferably a panel-shaped substrate (substrate) is used.

[0213] When a film is formed by applying a resin composition to the surface of a resin layer (for example, a layer made of a cured product) or the surface of a metal layer, the resin layer or the metal layer serves as the substrate.

[0214] Coating is preferred as a means for applying the resin composition to a substrate. Specific application methods include dip coating, air knife coating, curtain coating, wire bar coating, gravure coating, extrusion coating, spray coating, spin coating, slit coating, and inkjet coating. From the viewpoint of uniformity of film thickness, spin coating, slit coating, spray coating, or inkjet coating is preferred, and from the viewpoint of uniformity of film thickness and productivity, spin coating and slit coating are more preferred. By adjusting the solid content concentration of the resin composition and coating conditions depending on the application method, a film of the desired thickness can be obtained. In addition, the coating method can be appropriately selected depending on the shape of the substrate. For circular substrates such as wafers, spin coating, spray coating, inkjet coating, etc. are preferred, and for rectangular substrates, slit coating, spray coating, inkjet coating, etc. are preferred. In the case of spin coating, for example, it can be applied at a rotation speed of 500 to 3,500 rpm for about 10 seconds to 3 minutes. Alternatively, a method can be used in which a coating film formed by applying the coating composition to a temporary support in advance using the above-described application method is transferred onto the substrate. Regarding the transfer method, the preparation methods described in paragraphs 0023 and 0036 to 0051 of JP-A No. 2006-023696 and paragraphs 0096 to 0108 of JP-A No. 2006-047592 can be suitably used. A step of removing excess film from the edge of the substrate may also be performed. Examples of such a step include edge bead rinsing (EBR) and back rinsing. A pre-wetting step may also be employed in which the substrate is coated with various solvents before applying the resin composition to the substrate, improving the wettability of the substrate and then applying the resin composition.

[0215] <Drying Step> After the film-forming step (layer-forming step), the film may be subjected to a step (drying step) of drying the formed film (layer) to remove the solvent. That is, the method for producing a cured product of the present invention may include a drying step of drying the film formed in the film-forming step. The drying step is preferably carried out after the film-forming step and before the exposure step. The drying temperature of the film in the drying step is preferably 50 to 150°C, more preferably 70 to 130°C, and even more preferably 90 to 110°C. Drying may also be carried out under reduced pressure. The drying time is, for example, 30 seconds to 20 minutes, preferably 1 to 10 minutes, and more preferably 2 to 7 minutes.

[0216] <Exposure Step> The film may be subjected to an exposure step in which the film is selectively exposed to light. The method for producing a cured product may include an exposure step in which the film formed in the film formation step is selectively exposed to light. Selective exposure means that a portion of the film is exposed to light. Furthermore, selective exposure forms exposed regions (exposed portions) and unexposed regions (unexposed portions) in the film. The exposure dose is not particularly limited as long as it can cure the resin composition of the present invention, but for example, it is 50 to 10,000 mJ / cm2 in terms of exposure energy at a wavelength of 365 nm. ２ is preferred, and 200 to 8,000 mJ / cm ２ is more preferred.

[0217] The exposure wavelength can be appropriately determined within the range of 190 to 1,000 nm, and is preferably 240 to 550 nm.

[0218] The exposure wavelengths, in relation to the light source, are: (1) semiconductor laser (wavelengths 830 nm, 532 nm, 488 nm, 405 nm, 375 nm, 355 nm, etc.); (2) metal halide lamp; (3) high-pressure mercury lamp, g-line (wavelength 436 nm), h-line (wavelength 405 nm), i-line (wavelength 365 nm), broad (three wavelengths of g, h, and i-line); (4) excimer laser, KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), F ２Examples of such light include excimer laser (wavelength 157 nm), (5) extreme ultraviolet light; EUV (wavelength 13.6 nm), (6) electron beam, and (7) YAG laser second harmonic 532 nm and third harmonic 355 nm. For the resin composition of the present invention, exposure with a high-pressure mercury lamp is particularly preferred, and exposure with i-line is more preferred from the viewpoint of exposure sensitivity. The exposure method is not particularly limited as long as it is a method that exposes at least a portion of the film made of the resin composition of the present invention, and examples thereof include exposure using a photomask and exposure by laser direct imaging.

[0219] <Post-Exposure Bake Step> The film may be subjected to a heating step (post-exposure bake step) after exposure. That is, the method for producing a cured product of the present invention may include a post-exposure bake step in which the film exposed in the exposure step is heated. The post-exposure bake step can be carried out after the exposure step and before the development step. The heating temperature in the post-exposure bake step is preferably 50°C to 140°C, more preferably 60°C to 120°C. The heating time in the post-exposure bake step is preferably 30 seconds to 300 minutes, more preferably 1 minute to 10 minutes. The temperature rise rate in the post-exposure bake step from the temperature at the start of heating to the maximum heating temperature is preferably 1 to 12°C / min, more preferably 2 to 10°C / min, and even more preferably 3 to 10°C / min. The temperature rise rate may also be changed as appropriate during heating. The heating means in the post-exposure bake step is not particularly limited, and known hot plates, ovens, infrared heaters, etc. may be used. It is also preferable to carry out the heating in an atmosphere of low oxygen concentration by flowing an inert gas such as nitrogen, helium, or argon.

[0220] <Development step> The above-mentioned film after exposure may be subjected to a development step in which it is developed using a developer to form a pattern. That is, the method for producing a cured product of the present invention may include a development step in which the film exposed in the exposure step is developed using a developer to form a pattern. By carrying out development, one of the exposed and unexposed parts of the film is removed to form a pattern. Here, development in which the unexposed parts of the film are removed in the development step is called negative development, and development in which the exposed parts of the film are removed in the development step is called positive development.

[0221] [Developer] The developer used in the development step may be an aqueous alkaline solution or a developer containing an organic solvent.

[0222] When the developer is an alkaline aqueous solution, examples of the basic compound that can be contained in the alkaline aqueous solution include inorganic alkalis, primary amines, secondary amines, tertiary amines, and quaternary ammonium salts. Preferred are TMAH (tetramethylammonium hydroxide), potassium hydroxide, sodium carbonate, sodium hydroxide, sodium silicate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, di-n-butylamine, triethylamine, methyldiethylamine, dimethylethanolamine, triethanolamine, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetrapentylammonium hydroxide, tetrahexylammonium hydroxide, tetraoctylammonium hydroxide, ethyltrimethylammonium hydroxide, butyltrimethylammonium hydroxide, methyltriamylammonium hydroxide, dibutyldipentylammonium hydroxide, dimethylbis(2-hydroxyethyl)ammonium hydroxide, trimethylphenylammonium hydroxide, trimethylbenzylammonium hydroxide, triethylbenzylammonium hydroxide, pyrrole, and piperidine, and more preferred is TMAH. The content of the basic compound in the developer is preferably from 0.01 to 10% by mass, more preferably from 0.1 to 5% by mass, and even more preferably from 0.3 to 3% by mass, based on the total mass of the developer.

[0223] When the developer contains an organic solvent, the organic solvent may be a compound described in paragraph

[0387] of WO 2021 / 112189, the contents of which are incorporated herein by reference. Suitable examples of alcohols include methanol, ethanol, propanol, isopropanol, butanol, pentanol, octanol, diethylene glycol, propylene glycol, methyl isobutyl carbinol, and triethylene glycol, and suitable examples of amides include N-methylpyrrolidone, N-ethylpyrrolidone, and dimethylformamide.

[0224] When the developer contains an organic solvent, the organic solvent may be used alone or in combination. In the present invention, a developer containing at least one selected from the group consisting of cyclopentanone, γ-butyrolactone, dimethyl sulfoxide, N-methyl-2-pyrrolidone, and cyclohexanone is particularly preferred, a developer containing at least one selected from the group consisting of cyclopentanone, γ-butyrolactone, and dimethyl sulfoxide is more preferred, and a developer containing cyclopentanone is particularly preferred.

[0225] When the developer contains an organic solvent, the content of the organic solvent relative to the total mass of the developer is preferably 50% by mass or more, more preferably 70% by mass or more, even more preferably 80% by mass or more, and particularly preferably 90% by mass or more. Alternatively, the content may be 100% by mass.

[0226] The developer may further contain other components, such as known surfactants and known defoaming agents.

[0227] [Method of Supplying Developer] The method of supplying the developer is not particularly limited as long as it can form the desired pattern, and includes a method of immersing a substrate on which a film has been formed in the developer, puddle development in which the developer is supplied to the film formed on the substrate using a nozzle, and a method of continuously supplying the developer. The type of nozzle is not particularly limited, and examples include a straight nozzle, a shower nozzle, and a spray nozzle. From the viewpoints of the permeability of the developer, the removability of non-image areas, and production efficiency, a method of supplying the developer using a straight nozzle or a method of continuously supplying the developer using a spray nozzle is preferred, and from the viewpoint of the permeability of the developer to the image areas, a method of supplying using a spray nozzle is more preferred. In addition, a process may be adopted in which the developer is continuously supplied using a straight nozzle, the substrate is spun to remove the developer from the substrate, and after spin drying, the developer is continuously supplied again using a straight nozzle, and the substrate is spun to remove the developer from the substrate, or this process may be repeated multiple times. Methods of supplying the developer in the development process include a process in which the developer is continuously supplied to the substrate, a process in which the developer is kept substantially stationary on the substrate, a process in which the developer is vibrated on the substrate using ultrasound or the like, and a combination thereof.

[0228] The development time is preferably 10 seconds to 10 minutes, more preferably 20 seconds to 5 minutes. The temperature of the developer during development is not particularly limited, but is preferably 10 to 45°C, more preferably 18 to 30°C.

[0229] In the developing step, after the treatment with the developer, the pattern may be further washed (rinsed) with a rinse liquid. Alternatively, a method may be employed in which a rinse liquid is supplied before the developer in contact with the pattern is completely dried.

[0230] [Rinse Liquid] When the developer is an alkaline aqueous solution, for example, water can be used as the rinse liquid. When the developer is a developer containing an organic solvent, for example, a solvent different from the solvent contained in the developer (for example, water, an organic solvent different from the organic solvent contained in the developer) can be used as the rinse liquid.

[0231] When the rinse solution contains an organic solvent, examples of the organic solvent include the same organic solvents as those exemplified when the developer contains an organic solvent. The organic solvent contained in the rinse solution is preferably different from the organic solvent contained in the developer, and more preferably an organic solvent that has a lower solubility for the pattern than the organic solvent contained in the developer.

[0232] When the rinse solution contains an organic solvent, the organic solvent may be used alone or in combination of two or more. The organic solvent is preferably cyclopentanone, γ-butyrolactone, dimethyl sulfoxide, N-methylpyrrolidone, cyclohexanone, PGMEA, or PGME, more preferably cyclopentanone, γ-butyrolactone, dimethyl sulfoxide, PGMEA, or PGME, and even more preferably cyclohexanone or PGMEA.

[0233] When the rinse solution contains an organic solvent, the organic solvent preferably accounts for 50% by mass or more, more preferably 70% by mass or more, and even more preferably 90% by mass or more of the total mass of the rinse solution, and may also account for 100% by mass of the total mass of the rinse solution.

[0234] The rinse liquid may further contain other components, such as known surfactants and known defoaming agents.

[0235] [Method of Supplying Rinse Liquid] The method of supplying the rinse liquid is not particularly limited as long as it can form a desired pattern, and examples thereof include a method of immersing the substrate in the rinse liquid, a method of supplying the rinse liquid to the substrate by puddling, a method of supplying the rinse liquid to the substrate by showering, and a method of continuously supplying the rinse liquid onto the substrate by means of a straight nozzle or the like. From the viewpoints of the permeability of the rinse liquid, the removability of non-image areas, and production efficiency, methods of supplying the rinse liquid using a shower nozzle, straight nozzle, spray nozzle, etc. are available, and a method of continuously supplying using a spray nozzle is preferred, and from the viewpoint of the permeability of the rinse liquid into the image areas, a method of supplying using a spray nozzle is more preferred. The type of nozzle is not particularly limited, and examples include a straight nozzle, shower nozzle, spray nozzle, etc. That is, the rinsing step is preferably a step of supplying or continuously supplying the rinse liquid to the exposed film using a straight nozzle, and more preferably a step of supplying the rinse liquid using a spray nozzle. The method of supplying the rinse liquid in the rinsing step may include a step of continuously supplying the rinse liquid to the substrate, a step of keeping the rinse liquid substantially stationary on the substrate, a step of vibrating the rinse liquid on the substrate by ultrasonic waves or the like, and a combination of these steps.

[0236] The rinsing time is preferably 10 seconds to 10 minutes, more preferably 20 seconds to 5 minutes. The temperature of the rinsing liquid during rinsing is not particularly limited, but is preferably 10 to 45°C, more preferably 18 to 30°C.

[0237] <Heating Step> The pattern obtained by the development step (or the pattern after rinsing, if a rinsing step is performed) may be subjected to a heating step in which the pattern obtained by the development step is heated. That is, the method for producing a cured product of the present invention may include a heating step in which the pattern obtained by the development step is heated. Furthermore, the method for producing a cured product of the present invention may include a heating step in which a pattern obtained by another method without performing a development step, or a film obtained by a film formation step, is heated. In the heating step, a resin such as a polyimide precursor is cyclized to form a resin such as a polyimide. Furthermore, crosslinking of unreacted crosslinkable groups in the specific resin or in a crosslinking agent other than the specific resin also proceeds. The heating temperature (maximum heating temperature) in the heating step is preferably 50 to 450°C, more preferably 150 to 350°C, even more preferably 150 to 250°C, even more preferably 160 to 250°C, and particularly preferably 160 to 230°C.

[0238] The heating step is preferably a step in which the cyclization reaction of the polyimide precursor is promoted within the pattern by the action of a base or the like generated from the base generator due to heating.

[0239] The heating step is preferably carried out at a temperature increase rate of 1 to 12°C / min from the temperature at the start of heating to the maximum heating temperature. The temperature increase rate is more preferably 2 to 10°C / min, and even more preferably 3 to 10°C / min. By setting the temperature increase rate to 1°C / min or more, it is possible to prevent excessive volatilization of the acid or solvent while ensuring productivity, and by setting the temperature increase rate to 12°C / min or less, it is possible to alleviate residual stress in the cured product. In addition, in the case of an oven capable of rapid heating, it is preferable to increase the temperature from the temperature at the start of heating to the maximum heating temperature at a temperature increase rate of 1 to 8°C / sec, more preferably 2 to 7°C / sec, and even more preferably 3 to 6°C / sec.

[0240] The temperature at the start of heating is preferably 20°C to 150°C, more preferably 20°C to 130°C, and even more preferably 25°C to 120°C. The temperature at the start of heating refers to the temperature at the start of the process of heating up to the maximum heating temperature. For example, when the resin composition of the present invention is applied to a substrate and then dried, the temperature is the temperature of the film (layer) after this drying, and it is preferable to raise the temperature from, for example, a temperature 30 to 200°C lower than the boiling point of the solvent contained in the resin composition.

[0241] The heating time (heating time at the maximum heating temperature) is preferably from 5 to 360 minutes, more preferably from 10 to 300 minutes, and even more preferably from 15 to 240 minutes.

[0242] In particular, when forming a multilayer laminate, from the viewpoint of interlayer adhesion, the heating temperature is preferably 30° C. or higher, more preferably 80° C. or higher, even more preferably 100° C. or higher, and particularly preferably 120° C. or higher. The upper limit of the heating temperature is preferably 350° C. or lower, more preferably 250° C. or lower, and even more preferably 240° C. or lower.

[0243] Heating may be performed in stages. For example, the temperature may be increased from 25°C to 120°C at a rate of 3°C / min, held at 120°C for 60 minutes, increased from 120°C to 180°C at a rate of 2°C / min, and held at 180°C for 120 minutes. It is also preferable to treat the film while irradiating it with ultraviolet light, as described in U.S. Pat. No. 9,159,547. Such a pretreatment step can improve the film's properties. The pretreatment step may be performed for a short period of time, preferably from 10 seconds to 2 hours, more preferably from 15 seconds to 30 minutes. The pretreatment step may be performed in two or more steps. For example, a first pretreatment step may be performed in the range of 100 to 150°C, followed by a second pretreatment step in the range of 150 to 200°C. Furthermore, cooling may be performed after heating. In this case, the cooling rate is preferably from 1 to 5°C / min.

[0244] The heating step is preferably carried out in an atmosphere with a low oxygen concentration by flowing an inert gas such as nitrogen, helium, or argon, or by carrying out the heating step under reduced pressure, in order to prevent decomposition of the specific resin. The oxygen concentration is preferably 50 ppm (volume ratio) or less, more preferably 20 ppm (volume ratio) or less. The heating means used in the heating step is not particularly limited, and examples thereof include a hot plate, an infrared oven, an electric heating oven, a hot air oven, and an infrared oven.

[0245] <Post-development exposure step> The pattern obtained in the development step (if a rinsing step is performed, the pattern after rinsing) may be subjected to a post-development exposure step in which the pattern obtained in the development step is exposed to light, instead of or in addition to the heating step. That is, the method for producing a cured product of the present invention may include a post-development exposure step in which the pattern obtained in the development step is exposed to light. The method for producing a cured product of the present invention may include a heating step and a post-development exposure step, or may include only one of the heating step and the post-development exposure step. The post-development exposure step can promote, for example, a reaction in which cyclization of a polyimide precursor or the like progresses due to exposure of a photobase generator, or a reaction in which elimination of an acid-decomposable group progresses due to exposure of a photoacid generator. In the post-development exposure step, it is sufficient that at least a portion of the pattern obtained in the development step is exposed, but it is preferable that the entire pattern is exposed. The exposure dose in the post-development exposure step is 50 to 20,000 mJ / cm in terms of exposure energy at a wavelength to which the photosensitive compound has sensitivity. ２ is preferred, and 100 to 15,000 mJ / cm ２ The post-development exposure step can be carried out using, for example, the light source used in the exposure step described above, and it is preferable to use broadband light.

[0246] <Metal Layer Forming Step> The pattern obtained by the developing step (preferably subjected to at least one of a heating step and a post-development exposure step) may be subjected to a metal layer forming step of forming a metal layer on the pattern. That is, the method for producing a cured product of the present invention preferably includes a metal layer forming step of forming a metal layer on the pattern obtained by the developing step (preferably subjected to at least one of a heating step and a post-development exposure step).

[0247] The metal layer is not particularly limited, and existing metal species can be used. Examples include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, tungsten, tin, silver, and alloys containing these metals. Copper and aluminum are more preferred, and copper is even more preferred.

[0248] The method for forming the metal layer is not particularly limited, and existing methods can be applied. For example, the methods described in JP 2007-157879 A, ​​JP 2001-521288 A, JP 2004-214501 A, JP 2004-101850 A, U.S. Patent No. 7,888,181 B2, and U.S. Patent No. 9,177,926 B2 can be used. Examples of suitable methods include photolithography, PVD (physical vapor deposition), CVD (chemical vapor deposition), lift-off, electroplating, electroless plating, etching, printing, and combinations of these. More specifically, examples include patterning methods that combine sputtering, photolithography, and etching, and patterning methods that combine photolithography and electroplating. Preferred plating methods include electroplating using a copper sulfate or copper cyanide plating solution.

[0249] The thickness of the metal layer is preferably 0.01 to 50 μm, more preferably 1 to 10 μm, at the thickest part.

[0250] <Applications> Fields to which the method for producing a cured product of the present invention or the cured product can be applied include insulating films for electronic devices, interlayer insulating films for rewiring layers, stress buffer films, etc. Other examples include sealing films, substrate materials (base films, coverlays, and interlayer insulating films for flexible printed circuit boards), and the etching of insulating films for packaging applications such as those described above. For these applications, reference can be made to, for example, Science & Technology Co., Ltd.'s "High Performance Polyimide and Application Technology" (April 2008), edited by Masaaki Kakimoto, CMC Technical Library "Fundamentals and Development of Polyimide Materials" (November 2011), and Japan Polyimide and Aromatic Polymer Research Association's "Latest Polyimide Fundamentals and Applications" (NTS, August 2010).

[0251] The method for producing the cured product of the present invention, or the cured product of the present invention, can also be used for producing printing plates such as offset printing plates or screen printing plates, for etching molded parts, for producing protective lacquers and dielectric layers in electronics, especially microelectronics, etc.

[0252] (Laminate and method for manufacturing laminate) The laminate of the present invention refers to a structure having a plurality of layers each made of the cured product of the present invention. The laminate is a laminate including two or more layers each made of the cured product, and may be a laminate including three or more layers. At least one of the two or more layers each made of the cured product contained in the laminate is a layer made of the cured product of the present invention, and from the viewpoint of suppressing shrinkage of the cured product or deformation of the cured product associated with the shrinkage, it is also preferable that all of the layers made of the cured product contained in the laminate are layers made of the cured product of the present invention.

[0253] That is, the method for producing a laminate of the present invention preferably includes the method for producing a cured product of the present invention, and more preferably includes repeating the method for producing a cured product of the present invention multiple times.

[0254] The laminate of the present invention preferably includes two or more layers made of a cured product and a metal layer between any of the layers made of the cured product. The metal layer is preferably formed by the metal layer-forming step. That is, the method for producing a laminate of the present invention preferably further includes a metal layer-forming step of forming a metal layer on a layer made of a cured product between multiple cured product production processes. A preferred embodiment of the metal layer-forming step is as described above. Examples of the laminate include a laminate having at least a layer structure in which three layers are stacked in this order: a layer made of a first cured product, a metal layer, and a layer made of a second cured product. It is preferred that both the layer made of the first cured product and the layer made of the second cured product are layers made of the cured product of the present invention. The resin composition of the present invention used to form the layer made of the first cured product and the resin composition of the present invention used to form the layer made of the second cured product may have the same composition or different compositions. The metal layer in the laminate of the present invention is preferably used as metal wiring, such as a rewiring layer.

[0255] <Lamination Step> The method for producing a laminate of the present invention preferably includes a lamination step. The lamination step is a series of steps including performing at least one of (a) a film formation step (layer formation step), (b) an exposure step, (c) a development step, and (d) a heating step and a post-development exposure step again on the surface of the pattern (resin layer) or the metal layer in this order. However, at least one of (a) the film formation step and (d) the heating step and the post-development exposure step may be repeated. Furthermore, after at least one of (d) the heating step and the post-development exposure step, (e) a metal layer formation step may be included. It goes without saying that the lamination step may further include the above-mentioned drying step or the like as appropriate.

[0256] When a further lamination step is performed after the lamination step, a surface activation treatment step may be further performed after the exposure step, the heating step, or the metal layer forming step. An example of the surface activation treatment is a plasma treatment. Details of the surface activation treatment will be described later.

[0257] The lamination step is preferably performed 2 to 20 times, more preferably 2 to 9 times. For example, a structure having 2 to 20 resin layers, such as resin layer / metal layer / resin layer / metal layer / resin layer / metal layer, is preferred, and a structure having 2 to 9 resin layers is even more preferred. Each of the layers may be the same or different in composition, shape, film thickness, etc.

[0258] In the present invention, a particularly preferred embodiment is one in which, after providing a metal layer, a cured product (resin layer) of the resin composition of the present invention is further formed so as to cover the metal layer.Specific examples include an embodiment in which the steps of (a) film formation step, (b) exposure step, (c) development step, (d) at least one of a heating step and a post-development exposure step, and (e) metal layer formation step are repeated in this order, or an embodiment in which the steps of (a) film formation step, (d) at least one of a heating step and a post-development exposure step, and (e) metal layer formation step are repeated in this order.By alternately performing the lamination step of laminating the resin composition layer (resin layer) of the present invention and the metal layer formation step, the resin composition layer (resin layer) of the present invention and the metal layer can be alternately laminated.

[0259] (Surface Activation Treatment Step) The method for producing a laminate of the present invention preferably includes a surface activation treatment step in which at least a portion of the metal layer and the resin composition layer are surface-activated. The surface activation treatment step is usually performed after the metal layer formation step, but after the development step (preferably after at least one of the heating step and the post-development exposure step), the resin composition layer may be surface-activated before the metal layer formation step. The surface activation treatment may be performed only on at least a portion of the metal layer, or only on at least a portion of the resin composition layer after exposure, or may be performed on at least a portion of both the metal layer and the resin composition layer after exposure. The surface activation treatment is preferably performed on at least a portion of the metal layer, and it is preferable to perform the surface activation treatment on part or all of the region of the metal layer on which the resin composition layer is to be formed. In this way, by performing the surface activation treatment on the surface of the metal layer, adhesion with the resin composition layer (film) provided on the surface can be improved. The surface activation treatment is also preferably performed on part or all of the resin composition layer (resin layer) after exposure. In this way, by performing the surface activation treatment on the surface of the resin composition layer, adhesion with the metal layer or resin layer provided on the surface that has been surface-activated can be improved. In particular, when negative development is performed, when the resin composition layer is cured, it is less susceptible to damage due to surface treatment and adhesion is likely to be improved. The surface activation treatment can be carried out, for example, by the method described in paragraph 0415 of International Publication No. 2021 / 112189. The contents of this specification are incorporated herein.

[0260] (Semiconductor device and manufacturing method thereof) The present invention also discloses a semiconductor device comprising the cured product or laminate of the present invention. The present invention also discloses a manufacturing method for a semiconductor device comprising the manufacturing method for the cured product or the manufacturing method for the laminate of the present invention. Specific examples of semiconductor devices using the resin composition of the present invention to form an interlayer insulating film for a rewiring layer can be found in paragraphs 0213 to 0218 and FIG. 1 of JP 2016-027357 A, the contents of which are incorporated herein by reference.

[0261] (Method for Producing Resin) The method for producing a resin of the present invention includes a step of synthesizing a polyimide oligomer having an amino group at its terminal, and a step of reacting the polyimide oligomer with a compound represented by formula (A-1). Preferred aspects of the method for producing a resin of the present invention are the same as those of the method for producing the specific resin described above.

[0262] The present invention will be explained in more detail below with reference to examples. The materials, amounts used, ratios, processing details, processing procedures, etc. shown in the following examples can be changed as appropriate without departing from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below. Unless otherwise specified, "parts" and "%" are based on mass.

[0263] <Polymer Synthesis> [Synthesis Example A-1: ​​Synthesis of Resin (A-1)] 15.1 g (71.2 mmol) of 2,2'-dimethylbenzidine was dissolved in 87.9 g of N-methylpyrrolidone (NMP). 20.0 g (38.4 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride and 1.97 g (9.0 mmol) of pyromellitic anhydride were dissolved in 73.2 g of NMP, and the solution was added dropwise at a temperature of 0°C to 10°C over 1 hour, followed by stirring at 185°C to 195°C for 240 minutes. After the reaction, the solution was cooled to room temperature to obtain Resin Solution A-1a. 6.16 g (28.2 mmol) of pyromellitic anhydride, 0.77 g (1.5 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride, 7.89 g (60.5 mmol) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 10.42 g (131.8 mmol) of pyridine, and 35 g of diglyme were mixed and stirred at 60°C for 5 hours to produce pyromellitic anhydride and the diester of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride and 2-hydroxyethyl methacrylate. The mixture was then cooled to -20°C, and 7.42 g (61.6 mmol) of thionyl chloride was added dropwise over 90 minutes. The mixture was stirred for 2 hours, resulting in a white precipitate of pyridinium hydrochloride. Next, resin solution A-1a was added dropwise over 2 hours. Next, 5.47 g (118.6 mmol) of ethanol was added, and the mixture was stirred for 2 hours. Next, the resin was precipitated in 4 L of water, and the water-resin mixture was stirred at 500 rpm for 15 minutes. The resin was collected by filtration, stirred again in 4 L of water for 30 minutes, and filtered again. Next, the obtained resin was dried under reduced pressure at 45°C for 2 days to obtain resin (A-1). The weight average molecular weight (Mw) of the obtained resin (A-1) was 43,000, and the number average molecular weight (Mn) was 18,500. Resin (A-1) has a structure containing a repeating unit represented by the following formula (A-1): １The structure was confirmed by H-NMR. In the structure below, the symbols in parentheses are values ​​listed in the table below and represent the molar ratio of each structure. The weight average molecular weight (Mw), number average molecular weight (Mn), and imidization rate (%) of resin (A-1) are also listed in the table below. For convenience, two types are described: a repeating unit having two imidizable moieties (repeating units at m mol % and n mol % below), and a structure in which two imidizable moieties form an imide ring (repeating units at k mol % and 1 mol % below). However, in reality, repeating units in which only one of the two imidizable moieties forms an imide ring and the other does not form an imide ring are also included. This is the same for the resins below. Therefore, the molar ratio is the molar ratio assuming that only the repeating units listed below are present, and in reality, repeating units in which only one forms an imide ring and the other does not form an imide ring may be included within a range in which the total amount of imide ring structures is the same value. The proportion of the structure in which the imide ring is formed in the resin is shown in the table below as the imidization rate (%). This also applies to the other resins described below.

[0264] [Synthesis Examples A-2, A-14, A-15: Synthesis of Resins (A-2), (A-14), and (A-15)] Resins A-2, A-14, and A-15 were synthesized in the same manner as Resin A-1, except that the charging ratios of the raw materials, acid anhydride and diamine, used in Synthesis Example A-1 were appropriately changed. Resins (A-2), (A-14), and (A-15) have structures containing the same repeating units as Formula (A-1), except that the molar ratios of the respective structures in Formula (A-1) were changed to the values ​​shown in the tables below. The weight average molecular weights (Mw), number average molecular weights (Mn), and imidization rates (%) of Resins (A-2), (A-14), and (A-15) are shown in the tables below.

[0265] Synthesis Example A-3: Synthesis of Resin (A-3) 6.23 g (57.6 mmol) of 1,4-phenylenediamine was dissolved in 80.0 g of N-methyl-2-pyrrolidone (NMP). 20.0 g (38.4 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride was dissolved in 73.2 g of NMP and added dropwise at a temperature of 0 to 10°C over 1 hour, followed by stirring at 185 to 195°C for 240 minutes. After the reaction, the mixture was cooled to room temperature to obtain Resin Solution A-3a. 12.5 g (24.0 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride, 6.39 g (49.0 mmol) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 8.44 g (106.8 mmol) of pyridine, and 35 g of diglyme were mixed and stirred at 60°C for 5 hours to produce the diester of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride and 2-hydroxyethyl methacrylate. The mixture was then cooled to -20°C, and 6.01 g (49.9 mmol) of thionyl chloride was added dropwise over 90 minutes. The mixture was then stirred for 2 hours, resulting in a white precipitate of pyridinium hydrochloride. Resin solution A-3a was then added dropwise over 2 hours. Next, 4.43 g (96.1 mmol) of ethanol was added, and the mixture was stirred for 2 hours. The resin was then precipitated in 4 L of water, and the water-resin mixture was stirred at 500 rpm for 15 minutes. The resin was collected by filtration, stirred again in 4 L of water for 30 minutes, and filtered again. The resulting resin was then dried under reduced pressure at 45°C for 2 days to obtain resin (A-3). The weight-average molecular weight (Mw) of the resulting resin (A-3) was 32,300, and the number-average molecular weight (Mn) was 11,500. Resin (A-3) is presumed to have a structure containing a repeating unit represented by the following formula (A-3). In the structure below, the symbols in parentheses represent the values ​​listed in the table below and represent the molar ratio of each structure. The weight-average molecular weight (Mw), number-average molecular weight (Mn), and imidization rate (%) of resin (A-3) are also listed in the table below.

[0266] [Synthesis Examples A-4 to A-6, A-9 to A-13, A-16 to A-17: Synthesis of Resins (A-4) to (A-6), (A-9) to (A-13), (A-16) to (A-17), and (A-21) to (A-24)] Resins (A-4) to (A-6), (A-9) to (A-13), (A-16) to (A-17), and (A-21) to (A-24) were synthesized in the same manner as for Resin (A-1), except that the raw materials acid anhydride, diamine type, charging ratio, and 2-hydroxyethyl methacrylate (HEMA) used in Synthesis Example A-1 were appropriately changed. Resins (A-4) to (A-6), (A-9) to (A-13), and (A-16) to (A-17) are resins having repeating units represented by the following formulas (A-4) to (A-6), (A-9) to (A-13), (A-16) to (A-17), and (A-21) to (A-24), respectively. The structure of each repeating unit is as follows: １ The molecular weights were determined from H-NMR spectra. In the structures shown below, the symbols in parentheses represent the molar ratios of each structure contained, as shown in the table below. The weight-average molecular weight (Mw), number-average molecular weight (Mn), and imidization ratio (%) of these resins are also shown in the table below.

[0267] [Synthesis Examples A-7 to A-8: Synthesis of Resins (A-7) and (A-8)] Resins (A-7) and (A-8) were synthesized in the same manner as for Resin (AC-1) described below, except that the charging ratios of the raw materials, acid anhydride and diamine, used in Synthesis Example AC-1 described below were appropriately changed. Resins (A-7) and (A-8) are presumed to have structures containing the same repeating units as Formula (AC-1) described below, except that the molar ratios of the respective structures contained in Formula (AC-1) described below were changed to the values ​​shown in the tables described below. The weight average molecular weights, number average molecular weights, and imidization rates (%) of Resins (A-7) and (A-8) are shown in the tables described below.

[0268] Synthesis Example A-18: Synthesis of Resin (A-18) 8.38 g (38.4 mmol) of pyromellitic anhydride, 20.0 g (38.4 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride, and 7.89 g (60.5 mmol) of N-methylpyrrolidone (NMP) were dissolved in 165 g of N-methylpyrrolidone (NMP). A solution of 14.2 g (71.5 mmol) of 4,4'-diaminodiphenylmethane dissolved in 115 g of NMP was added dropwise to the solution at a temperature of 0 to 10°C over 1 hour. After returning to room temperature, stirring was continued for an additional 2 hours. 15.0 g (72.9 mmol) of N,N'-dicyclohexylcarbodiimide was added, followed by the addition of 9.49 g (72.9 mmol) of 2-hydroxyethyl methacrylate, and the mixture was stirred at 40°C for 12 hours. After the reaction was completed, 9.81 g (96.1 mmol) of acetic anhydride and 12.2 g (153.7 mmol) of pyridine were added at room temperature, and the reaction was continued at 80°C for 4 hours. After the reaction was completed and the mixture was returned to room temperature, the resin was precipitated in 4 L of water, and the water-resin mixture was stirred at 500 rpm for 15 minutes. The resin was collected by filtration, stirred again in 4 L of water for 30 minutes, and filtered again. The resulting resin was then dried under reduced pressure at 45°C for 2 days to obtain resin (A-18). The weight-average molecular weight (Mw) of the resulting resin (A-18) was 35,300, and the number-average molecular weight (Mn) was 13,200. Resin (A-18) is presumed to have a structure containing a repeating unit represented by the following formula (A-18). In the following structure, the symbols in parentheses are the values ​​listed in the table below and represent the molar ratio of each structure contained. The weight average molecular weight (Mw), number average molecular weight (Mn) and imidization rate (%) of Resin (A-18) are shown in the table below.

[0269] Synthesis Example A-19: Synthesis of Resin (A-19) 25.1 g (48.2 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride, 10.5 g (48.2 mmol) of pyromellitic anhydride, 25.3 g (194 mmol) of 2-hydroxyethyl methacrylate, and 136.83 g of tetrahydrofuran were added and stirred at room temperature (25°C), and 15.7 g (198 mmol) of pyridine was added with stirring to obtain a reaction mixture. After the heat generation due to the reaction had ceased, the mixture was allowed to cool to room temperature and left to stand for 16 hours. Next, under ice cooling, a solution of 39.7 g (193 mmol) of dicyclohexylcarbodiimide (DCC) dissolved in 61.6 g of tetrahydrofuran was added to the reaction mixture over 40 minutes with stirring, followed by the addition of 14.2 g (71.5 mmol) of 4,4'-diaminodiphenylmethane dissolved in 119.7 g of N-methylpyrrolidone (NMP) over 60 minutes with stirring. After further stirring at room temperature for 2 hours, 4.56 g of ethanol was added and stirred for 1 hour, followed by the addition of 136.83 g of tetrahydrofuran. The resulting reaction mixture was allowed to stand at room temperature for 20 hours, after which the precipitate formed in the reaction mixture was removed by filtration to obtain a reaction solution. The resulting reaction solution was added to 750 g of ethanol to produce a precipitate consisting of a crude polymer. The produced crude polymer was filtered off and dissolved in 250 g of tetrahydrofuran to obtain a crude polymer solution. The resulting crude polymer solution was added dropwise to 5 L of water to precipitate the polymer, and the resulting precipitate was filtered. The resulting resin was then dried under reduced pressure at 45°C for 2 days to obtain resin (A-19). The resulting resin (A-19) had a weight-average molecular weight of 31,200 and a number-average molecular weight (Mn) of 10,900. Resin (A-19) is presumed to have a structure containing a repeating unit represented by the following formula (A-19). In the following structure, the symbols in parentheses are values ​​listed in the table below and represent the molar ratio of each structure contained. The weight-average molecular weight (Mw), number-average molecular weight (Mn), and imidization rate (%) of resin (A-19) are also listed in the table below.

[0270] [Synthesis Example A-20: Synthesis of Resin (A-20)] Resin (A-20) was synthesized in the same manner as for Resin (A-18), except that 2-hydroxyethyl methacrylate in Synthesis Example A-18 was replaced with 4-vinylbenzylamine. Resin (A-20) is presumed to have a structure containing a repeating unit represented by the following formula (A-20). In the structure below, the symbols in parentheses represent values ​​listed in the table below and represent the molar ratio of each structure contained. The weight average molecular weight (Mw), number average molecular weight (Mn), and imidization rate (%) of Resin (A-20) are also listed in the table below.

[0271] Synthesis Example AC-1: Synthesis of Resin (AC-1) 37.7 g (117.8 mmol) of 2,2'-bis(trifluoromethyl)benzidine was dissolved in 91.2 g of N-methylpyrrolidone (NMP). 20.0 g (38.4 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride and 2.79 g (12.8 mmol) of pyromellitic anhydride were dissolved in 76.0 g of NMP, and the solution was added dropwise at a temperature of 0 to 10°C over 1 hour, followed by stirring at 185 to 195°C for 240 minutes. After the reaction, the solution was cooled to room temperature to obtain Resin Solution AC-1a. 16.9 g (77.2 mmol) of pyromellitic anhydride, 2.11 g (4.1 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride, 21.6 g (165.9 mmol) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 28.6 g (361 mmol) of pyridine, and 100 g of diglyme were mixed and stirred at 60°C for 5 hours to produce pyromellitic anhydride and the diester of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride and 2-hydroxyethyl methacrylate. The mixture was then cooled to -20°C, and 20.3 g (168.7 mmol) of thionyl chloride was added dropwise over 90 minutes. The mixture was stirred for 2 hours, resulting in a white precipitate of pyridinium hydrochloride. Next, resin solution AC-1a was added dropwise over 2 hours. Then, 15.0 g (325 mmol) of ethanol was added, and the mixture was stirred for 2 hours. The resin was then precipitated in 4 L of water, and the water-resin mixture was stirred at 500 rpm for 15 minutes. The resin was collected by filtration, stirred again in 4 L of water for 30 minutes, and filtered again. The resulting resin was then dried under reduced pressure at 45°C for 2 days to obtain resin (AC-1). Resin (AC-1) is presumed to have a structure containing a repeating unit represented by the following formula (AC-1). In the structure below, the subscripts of the repeating units indicate the molar ratio of each repeating unit. The weight average molecular weight (Mw), number average molecular weight (Mn), and imidization rate (%) of resin (AC-1) are listed in the table below.

[0272] [Synthesis Example AC-2: Synthesis of Resin (AC-2)] Resin (AC-2) was synthesized in the same manner as Resin (AC-1), except that the charging ratios of the raw materials, acid anhydride and diamine, used in Synthesis Example AC-1 were appropriately changed. Resin (AC-2) has a structure containing the same repeating units as Formula (AC-1), except that the molar ratios of the structures contained in Formula (AC-1) were changed to the values ​​shown in the table below. The weight average molecular weight (Mw) of Resin (AC-2) was 57,800, and the number average molecular weight (Mn) was 20,900. The weight average molecular weight (Mw), number average molecular weight (Mn), and imidization rate (%) of Resin (AC-2) are shown in the table below.

[0273] Synthesis Example AA-1: 48.65 g (225 mmol) of 3,3'-dihydroxybenzidine and 375 mL of dimethylformamide were mixed in a flask. Under ice cooling, 98.21 g (450 mmol) of di-t-butyl dicarbonate was added dropwise. After the completion of the dropwise addition, the mixture was stirred at 60°C for 5 hours. After the reaction was completed and the mixture was cooled to room temperature, 35 mg of 2,2,6,6-tetramethylpiperidine 1-oxyl free radical, 68.68 g (450 mmol) of p-chloromethylstyrene, 74.63 g (540 mmol) of potassium carbonate, and 8.96 g (54.0 mmol) of potassium iodide were added, and the mixture was stirred at 60°C for 3 hours. After the reaction was completed, filtration was performed by suction filtration, and the filtrate was added dropwise to 500 mL of water. White crystals precipitated, and the precipitated solid was collected by suction filtration. The obtained white solid was purified by recrystallization using 1000 mL of acetone at 60°C. 125 g (yield 85.6%) of the following intermediate AA-1a was obtained. The structure of AA-1a is shown below. １ This was confirmed by H-NMR spectrum. １ H-NMR (BRUKER, AVANCE NEO 400): δ(ppm,DMSO-d6)8.04-7.94(s,2H), 7.75-7.64(d,2H), 7.56-7.42(m,8H), 7.27-7.20(d,2H), 7.19-7.12(d,2H), 6.79-6.64(2H), 5.89-5.77(2H), 5.30-5.15(6H), 1.49-1.43(s,18H)

[0274] 75.0 g (115.6 mmol) of (AA-1a) and 500 mL of methylene chloride were mixed in a flask. 131.8 g (1156 mmol) of trifluoroacetic acid was added at room temperature, and then the mixture was stirred at 40°C for 5 hours. After the reaction was completed, 250 mL of methanol was added dropwise under ice cooling, followed by 117.0 g (1156 mmol) of triethylamine. Pale yellow crystals were precipitated, and the precipitated solid was collected by suction filtration. The mixture was suspended and washed in 750 mL of methanol, yielding 40.5 g (73% yield) of (AA-1). The structure of AA-1 is shown below. The following structure is １ This was confirmed by H-NMR spectrum. １ H-NMR (BRUKER, AVANCE NEO 400): δ(ppm,DMSO-d6)7.53-7.45(s,8H), 7.05-6.98(d,2H), 6.92-6.85(d,2H), 6.79-6.63(4H), 5.89-5.78(d,2H), 5.29-5.22(d,2H), 5.20-5.13(s,4H), 4.92-4.64(4H)

[0275] Synthesis Example AT-1 AT-1 was obtained in the same manner as in Synthesis Example AA-1, except that 3,3'-dihydroxybenzidine was replaced with p-methoxyphenol. The structure of AT-1 is shown below. １ This was confirmed by H-NMR spectrum. １ H-NMR (BRUKER, AVANCE NEO 400): δ(ppm,DMSO-d6)7.52-7.42(d,2H), 7.42-7.32(d,2H), 6.80-6.63(3H), 6.54-6.43(d,2H), 5.92-5.77(1H), 5.30-5.19(1H), 4.95-4.89(s,2H), 4.68-4.54(2H) (Polymer Synthesis) <Synthesis Example AC-3: Synthesis of Polyimide (AC-3)> 30.0 g (57.64 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride and 0.08 g of 2,2,6,6-tetramethylpiperidine 1-oxyl free radical were dissolved in 120 g of N-methylpyrrolidone (NMP) to obtain a solution. Subsequently, 4.88 g (23.0 mmol) of 2,2'-dimethylbenzidine, 10.32 g (23.0 mmol) of AA-1, and 1.30 g (5.76 mmol) of AT-1 were dissolved in 100 g of NMP and added dropwise to the solution over 1 hour at a temperature of 0°C to 10°C. After stirring at 25°C for 60 minutes, 18.2 g of pyridine and 14.7 g of acetic anhydride were added, and the mixture was allowed to react at 80°C for 4 hours. After the reaction was completed, the mixture was cooled to 25°C and diluted with 200 g of tetrahydrofuran. Subsequently, the reaction solution was added dropwise to a mixture of 2.0 L of methanol and 0.5 L of water, stirred for 15 minutes, and the resulting polyimide resin was filtered. The resin was then reslurried in 1 L of water, filtered, and then reslurried again in 1 L of methanol, filtered, and dried under reduced pressure at 40°C for 10 hours. The dried resin was then dissolved in 250 g of tetrahydrofuran, 40 g of ion exchange resin (MB-1: manufactured by Organo Corporation) was added, and the mixture was stirred for 4 hours. The ion exchange resin was removed by filtration, and the resulting polyimide resin was precipitated in 2 L of methanol and stirred for 15 minutes. The polyimide resin was collected by filtration and dried under reduced pressure at 45°C for 1 day to obtain polyimide resin (AC-3). The resulting polyimide (AC-3) had a weight average molecular weight of 17,300 and a number average molecular weight of 7,250. The imidization rate was 95% or more. Polyimide (AC-3) is a resin having a repeating unit represented by the following formula (AC-3): １ Determined from H-NMR spectrum.

[0276]

[0277] [Method for Measuring Imidization Ratio] Resins (A-1) to (A-20), (AC-1), (AC-2), and (AC-3) were each dissolved in γ-butyrolactone, diluted to a viscosity of 2000 mPa·s, and applied to a silicon wafer by spin coating to form a resin layer. The silicon wafer to which the obtained resin layer was applied was dried on a hot plate at 110°C for 5 minutes, yielding a resin layer with a uniform thickness of approximately 15 μm after film formation on the silicon wafer. The resin layer was measured by the ATR method using a Nicolet iS20 (manufactured by ThermoFisher) in the measurement range of 4000 to 700 cm. －１ The measurement was carried out 50 times. －１ Around (1350-1450 cm －１ (If there are multiple peaks, the peak with the greatest intensity) and 1500 cm －１ Around (1460-1550 cm －１ The imidization index B was calculated in the same manner for a film that was heated at a heating rate of 10°C / min in a nitrogen atmosphere and heated at 350°C for 1 hour, and the imidization rate of the resin was calculated by dividing the imidization index A by the imidization index B.

[0278] [Method for measuring weight average molecular weight (Mw) and number average molecular weight (Mn)] The weight average molecular weight (Mw) and number average molecular weight (Mn) of resins (A-1) to (A-20), (AC-1), (AC-2), and (AC-3) were measured using gel permeation chromatography (GPC). Specifically, they were determined using an HLC-8420GPC (manufactured by Tosoh Corporation) and two TSKguard column SuperAW-H and TSK SuperAWM-H columns (both manufactured by Tosoh Corporation) connected in series. An NMP solution of lithium bromide (10 mmol / L) / phosphoric acid (30 mmol / L) was used as the eluent, and a UV (ultraviolet) wavelength detector at 275 nm was used to detect the values ​​as polystyrene equivalents.

[0279] Examples and Comparative Examples In each example, the components listed in the table below were mixed to obtain a resin composition. In each comparative example, the components listed in the table below were mixed to obtain a comparative composition. Specifically, the content of each component listed in the table was the amount (parts by mass) listed in the "Parts by Mass" column of each column in the table. The amount of solvent used was such that the solid content concentration of the composition would be the "Solid Content Concentration (% by mass)" in the table, and each solvent was mixed at the mixing ratio (mass ratio) listed in the "Ratio" column. The obtained resin composition and comparative composition were pressure-filtered using a polytetrafluoroethylene filter with a pore size of 0.8 μm. In the table, "-" indicates that the composition did not contain the corresponding component.

[0280]

[0281]

[0282]

[0283]

[0284] [Resins] A-1 to A-24: Resins (A-1) to (A-24) synthesized above AC-1, AC-2, AC-3: Resins (AC-1), (AC-2), and (AC-3) synthesized above A-1 to A-24 are compounds that fall under the category of specific resins. AC-1, AC-2, and AC-3 are compounds that do not fall under the category of specific resins.

[0285] [Polymerizable compounds] B-1: SR-209 (manufactured by Sartomer Corporation) B-2: ADPH: dipentaerythritol hexaacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd.) B-3: Compound having the following structure B-4: Compound having the following structure

[0286] [Polymerization initiators] C-1: IRGACURE OXE 01 (manufactured by BASF) C-2: IRGACURE OXE 02 (manufactured by BASF) C-3: IRGACURE 369 (manufactured by BASF) C-4: Compound having the following structure C-5: Compound having the following structure C-6: Compound having the following structure C-7: Omnirad 1312 (manufactured by IGM) C-8: Omnirad TPO H (manufactured by IGM) C-9: CPI-310FG (manufactured by San-Apro Ltd.) C-10: CPI-310B (manufactured by San-Apro Ltd.) C-11: Benzoyl peroxide (manufactured by Tokyo Chemical Industry Co., Ltd.) ・C-12: TR-PBG-301

[0287] [Thermal Base Generators] D-1 to D-7: Compounds represented by the following formulas (D-1) to (D-7):

[0288] [Polymerization inhibitors] E-1: 2-nitroso-1-naphthol (manufactured by Tokyo Chemical Industry Co., Ltd.) E-2: parabenzoquinone (manufactured by Tokyo Chemical Industry Co., Ltd.) E-3: paramethoxyphenol (manufactured by Tokyo Chemical Industry Co., Ltd.) E-4: compound having the following structure E-5: compound having the following structure

[0289] [Migration inhibitors] F-1 to F-9: Compounds having the following structure

[0290] [Silane coupling agents] G-1 to G-4: Compounds having the following structures (wherein, in the following structural formulas, Et represents an ethyl group). G-5: X-12-1293 (manufactured by Shin-Etsu Chemical Co., Ltd.). G-6: KR-513 (manufactured by Shin-Etsu Chemical Co., Ltd.).

[0291] [Solvents] GBL: γ-butyrolactone DMSO: dimethyl sulfoxide NMP: N-methyl-2-pyrrolidone EL: ethyl lactate GVL: γ-valerolactone MDMPA: KJCMPA-100 (3-methoxy-N,N-dimethylpropanamide, manufactured by KJ Chemicals Co., Ltd.) CP: cyclopentanone CH: cyclohexanone

[0292] [Additives] H-1: Compound represented by the following formula (H-1) H-2: N-phenyldiethanolamine H-3: Compound having the following structure H-4: Compound having the following structure H-5: Compound having the following structure (synthesized according to the synthesis method below)

[0293] [Method for synthesizing H-5] 29.72 g (70 mmol) of 4,4'-(1-(2-(4-hydroxyphenyl)-2-propyl)phenyl)ethylidene)bisphenol (Tris-PA, manufactured by Honshu Chemical Industry Co., Ltd.) was added to a flask. Subsequently, 46.93 g (174.9 mmol) of 1,2-naphthoquinone diazide-5-sulfonic acid chloride and 17.9 g of triethylamine were dissolved in 300 g of acetone with stirring, and the solution was added dropwise to the flask using a dropping funnel over 30 minutes, followed by stirring for 30 minutes at an internal temperature of 30°C. Subsequently, hydrochloric acid was added dropwise, and the mixture was stirred for an additional 30 minutes. Next, a solution of 1,640 g of pure water and 30 g of hydrochloric acid was prepared in a beaker, and the filtrate obtained by filtering the hydrochloride salt from the reaction solution was added dropwise to the solution. The precipitate was filtered, washed with water, and vacuum-dried at 40°C for 50 hours to obtain diazonaphthoquinone compound H-5.

[0294] [Titanium compounds] I-1: TC-750 (manufactured by Matsumoto Fine Chemical Co., Ltd.) I-2: TC-401 (manufactured by Matsumoto Fine Chemical Co., Ltd.) I-3: TC-800 (manufactured by Matsumoto Fine Chemical Co., Ltd.) I-4: TC-810 (manufactured by Matsumoto Fine Chemical Co., Ltd.) I-5 to I-8: Compounds having the following structures

[0295] [Surfactants] J-1: F-554 (manufactured by DIC) J-2: BYK-3760 (manufactured by BYK) J-3: BYK-333 (manufactured by BYK)

[0296] <Evaluation> [Evaluation of Coatability] Each resin composition or comparative composition prepared in each Example and Comparative Example was spin-coated at 1000 rpm onto a 4-inch silicon wafer and heated on a hot plate at 100°C for 5 minutes to form a film. The surface of the obtained wafer was observed, and coatability was evaluated visually or using an optical microscope. A rating of A or B can be said to indicate that unevenness during coating was suppressed, and a rating of A can be said to indicate that unevenness during coating was further suppressed. (Evaluation Criteria) A: No foreign matter was found on the surface. B: Foreign matter was found in some areas on the surface. C: Foreign matter was found over the entire surface.

[0297] [Evaluation of Shrinkage Rate] In each Example and Comparative Example, a resin composition or a comparative composition was applied to a silicon wafer by spin coating to form a resin composition layer. The silicon wafer to which the obtained resin composition layer was applied was dried on a hot plate at 100°C for 5 minutes, thereby obtaining a uniform curable resin composition layer having a thickness of about 15 µm on the silicon wafer. The film thickness of the curable resin composition layer was measured using a reflection spectroscopic film thickness meter (FE-3000, manufactured by Otsuka Electronics), and this value was defined as "film thickness A." Subsequently, a stepper (Nikon NSR 2005 i9C) was used to apply a beam of 500 mJ / cm to the entire surface of the obtained curable resin composition layer. ２ The curable resin composition layer (resin layer) after exposure was heated at a temperature increase rate of 10°C / min in a nitrogen atmosphere, heated at the temperature and for the time indicated in the "Cure Temperature (°C)" and "Cure Time (min)" columns in the table, and cooled to 25°C to obtain a cured product. The film thickness of the cured product was measured using a reflection spectroscopic film thickness meter (FE-3000, manufactured by Otsuka Electronics), and this value was recorded as "Film Thickness B." The shrinkage of the film was calculated using the following formula: Shrinkage (%) = 100 - (Film Thickness B ÷ Film Thickness A × 100) Evaluation was performed according to the following evaluation criteria, and the evaluation results are reported in the "Shrinkage" column in the table. The smaller the shrinkage value, the better the curing shrinkage of the resulting composition layer. (Evaluation Criteria) A: The shrinkage was less than 15%. B: The shrinkage was 15% or more but less than 30%. C: The shrinkage was 30% or more.

[0298] [Evaluation of CTE (Coefficient of Thermal Expansion)] In each example and comparative example, a resin composition or a comparative composition was applied to a silicon wafer by spin coating to form a resin composition layer. The silicon wafer to which the obtained resin composition layer was applied was dried on a hot plate at 110°C for 5 minutes, and a resin composition layer having a uniform thickness after film formation on the silicon wafer was obtained, the thickness of which is shown in the "Film Thickness (µm)" column in the table. The obtained resin composition layer was then exposed to a Ushio exposure machine (light source: 500 W / m ２ Ultra-high pressure mercury lamp) at 400 mJ / cm ２The film was exposed using a dumbbell-shaped mask at an exposure energy of 100 uV. The dumbbell shape was a No. 7 dumbbell shape as described in JIS K 6251:2017. The exposed resin composition layer (resin layer) was developed with the developer listed in the "Developer" column of the table until the unexposed areas were removed, and then rinsed with PGMEA for 30 seconds. The temperature was then increased at a rate of 10°C / min under a nitrogen atmosphere, and the film was heated to the temperature and time listed in the "Cure Temperature (°C)" and "Cure Time (min)" columns of the table. The cured resin layer (cured product) was immersed in a 4.9% by mass aqueous solution of hydrofluoric acid, and a dumbbell-shaped cured product (test specimen) was peeled off from the silicon wafer (sample width: 2 mm, sample length: 35 mm). The CTE of the test specimen prepared above was measured at 25°C to 125°C using a TMA450 (TA Instruments). The heating and cooling conditions during evaluation were as follows (1) to (4). (1) The temperature was increased from room temperature to 130°C at a rate of 5°C / min. (2) The temperature was decreased from 130°C to 10°C at a rate of 5°C / min. (3) The temperature was increased from 10°C to 300°C at a rate of 5°C / min. (4) The sample was allowed to cool naturally to room temperature. The elongation (displacement) of the sample was measured during the temperature increase and decrease processes (1) to (4) above, and the elongation (displacement) of the sample at 25°C and 125°C in process (3) was divided by the temperature to calculate the thermal expansion coefficient. (For example, if the length of the sample at 25°C was 50 mm and the length of the sample at 125°C was 50.2 mm, the displacement was calculated as 0.4% = 4000 ppm, and the thermal expansion coefficient was calculated as 4000 / (125-25) = 40 ppm / °C.) The obtained CTE was evaluated according to the following evaluation criteria, and the evaluation results are shown in the "CTE" column of the table. (Evaluation Criteria) A: CTE was less than 30 ppm / °C. B: CTE was 30 ppm / °C or more and less than 55 ppm / °C. C: CTE was more than 55 ppm / °C.

[0299] [Evaluation of Resolution] The resin composition used in each Example and Comparative Example was applied in the form of a layer by spin coating to the surface of the thin copper layer of a resin substrate having a thin copper layer formed on its surface, and dried at 110°C for 5 minutes to form a resin composition layer having a thickness as shown in the "Thickness (μm)" column in the table. The obtained resin composition layer was then subjected to a spin coating of 100 to 800 mJ / cm using an i-line stepper (Canon: FPA-3000i5, NA=0.5, σ=0.7) using a square via mask having a pattern formed in 0.5 μm increments from 0.5 to 10 μm. ２ in the range of 50 mJ / cm ２ The film was exposed to each exposure dose in increments. The film was then developed with the developer listed in the "Developer" column of the table until the unexposed areas were removed, rinsed with PGMEA for 30 seconds, and heated at a temperature increase rate of 10°C / min under a nitrogen atmosphere for the temperature and time listed in the "Cure Temperature (°C)" and "Cure Time (min)" columns of the table. The minimum opening mask diameter of the resulting cured product was determined by cross-sectional observation of the opening pattern portion using a scanning microscope S-4800 (manufactured by Hitachi High-Technologies Corporation) and evaluated according to the following evaluation criteria. The minimum opening mask diameter was defined as the smallest mask diameter among those that formed an opening pattern with at least one of the above exposure doses. The evaluation results are listed in the "Resolution" column of the table. (Evaluation Criteria) A: The minimum opening mask diameter was 3 μm or less. B: The minimum opening mask diameter was greater than 3 μm and less than 5 μm. C: The minimum opening mask diameter was greater than 5 μm and less than 7 μm. D: The minimum opening mask diameter exceeded 7 μm.

[0300] The above results show that the use of the resin composition according to the present invention suppresses unevenness during application and shrinkage during curing. In comparison, the cured products obtained from the compositions according to Comparative Examples 1 and 2, which do not contain a resin with a predetermined imidization rate, are inferior in either unevenness during application or shrinkage during curing.

[0301] Example 1001 The resin composition used in Example 1 was applied in the form of a layer by spin coating to the surface of the thin copper layer of a resin substrate having a thin copper layer formed on its surface. The resulting layer was dried at 100°C for 5 minutes to form a 20 μm-thick photosensitive film, which was then exposed using a stepper (Nikon Corporation, NSR1505 i6). The exposure was performed at a wavelength of 365 nm through a mask (a binary mask with a 1:1 line-and-space pattern and a line width of 10 μm). After the exposure, the film was developed with cyclopentanone for 2 minutes and rinsed with PGMEA for 30 seconds to obtain a layer pattern. The temperature was then increased at a rate of 10°C / min in a nitrogen atmosphere, reaching 230°C, and maintained at 230°C for 180 minutes to form an interlayer insulating film for a redistribution layer. This interlayer insulating film for a redistribution layer had excellent insulating properties. Furthermore, a semiconductor device was manufactured using this interlayer insulating film for a redistribution layer, and it was confirmed to operate without any problems.

Claims

1. A resin composition comprising: a resin having at least one repeating unit selected from the group consisting of a repeating unit represented by the following formula (1-2), a repeating unit represented by the following formula (1-3), and a repeating unit represented by the following formula (1-4); a polymerization initiator; and a solvent, wherein the imidization rate of the resin is 40 to 85%. In formula (1-2), A ２ is -O- or -NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, R ２ is a hydrogen atom or a monovalent organic group, X ２ is a tetravalent organic group, Y ２ In formula (1-3), A is a divalent organic group. ３ is -O- or -NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, R ３ is a hydrogen atom or a monovalent organic group, X ３ is a tetravalent organic group, Y ３ In formula (1-4), A is a divalent organic group. ４１ and A ４２ Each independently represents -O- or -NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, R ４１ and R ４２ are each independently a hydrogen atom or a monovalent organic group; X ４ is a tetravalent organic group, Y ４ is a divalent organic group.

2. The resin composition according to claim 1, wherein the resin contains at least one repeating unit selected from the group consisting of the following repeating units A-2, A-3, and A-4: Repeating unit A-2: A repeating unit represented by formula (1-2), wherein X ２ Repeating unit A-3: A repeating unit represented by the formula (1-3), wherein X is any one of the structures represented by the following formulas (2a) to (2g). ３ Repeating unit A-4: A repeating unit represented by the formula (1-4), wherein X ４ A repeating unit having any one of the structures represented by the following formulas (2a) to (2g): In formulas (2a) to (2g), L １ and L ２ are each independently a divalent group that is not conjugated with the benzene ring to which it is bonded, or a single bond, and *1 to *4 each represent a bonding site with the carbonyl group shown in formula (1-2), formula (1-3), or formula (1-4), and the hydrogen atoms in these structures may be substituted with substituents.

3. The resin composition according to claim 2, wherein the resin further comprises at least one repeating unit selected from the group consisting of the repeating unit B-2, the repeating unit B-3, and the repeating unit B-4. Repeating unit B-2: A repeating unit represented by the formula (1-2), wherein X ２ Repeating unit B-3: A repeating unit represented by the formula (1-3), comprising a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulas (V-1) to (V-10): ３ Repeating unit B-4: A repeating unit represented by the formula (1-4), comprising a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulas (V-1) to (V-10): ４ A repeating unit containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulas (V-1) to (V-10): In formula (V-2), R Ｘ１ Each of R independently represents a hydrogen atom, an alkyl group, or a halogenated alkyl group. Ｘ２ and R Ｘ３ each independently represents a hydrogen atom or a substituent; R Ｘ２ and R Ｘ３ may be bonded to form a ring structure. In formula (V-4), n1 represents an integer of 1 or more. In formula (V-8), R Ｘ５ each independently represents a hydrogen atom, an alkyl group, or a halogenated alkyl group.

4. The resin is a repeating unit represented by the formula (1-2), R ２ is a monovalent organic group having an ethylenically unsaturated bond; a repeating unit represented by the formula (1-3), ３ is a monovalent organic group having an ethylenically unsaturated bond, and a repeating unit represented by the formula (1-4), ４１ and R ４２ The resin composition according to any one of claims 1 to 3, comprising at least one repeating unit selected from the group consisting of repeating units in which at least one of the repeating units is a monovalent organic group having an ethylenically unsaturated bond.

5. The resin is a repeating unit represented by the formula (1-2), ２ A repeating unit having a structure represented by the following formula (C-1) to formula (C-5), a repeating unit represented by the formula (1-3), ３ A repeating unit having a structure represented by the following formula (C-1) to formula (C-5), and a repeating unit represented by the formula (1-4), ４ The resin composition according to any one of claims 1 to 3, comprising at least one repeating unit selected from the group consisting of repeating units having a structure represented by the following formulas (C-1) to (C-5): In formula (C-1), R １ Each of R independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, n2 represents an integer of 0 to 3, and * represents a bonding site with another structure. １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, n2 represents an integer of 0 to 3, R ２ Each independently represents an alkyl group or a fluoroalkyl group, and * represents a bonding site with another structure. １ Each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, and * represents a bonding site with another structure. １ Each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, and * represents a bonding site with another structure. １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, n2 represents an integer of 0 to 3, R ２ each independently represents an alkyl group or a fluoroalkyl group, and * represents a bonding site to another structure.

6. The resin composition according to any one of claims 1 to 3, wherein the resin contains a repeating unit represented by the following formula (1-1): X １ is a tetravalent organic group of the formula Y １ is a divalent organic group.

7. The resin composition according to any one of claims 1 to 3, wherein the weight average molecular weight of the resin is 5,000 or more and less than 120,000.

8. The resin composition according to any one of claims 1 to 3, which does not contain a polymerizable compound or contains a polymerizable compound in an amount of less than 15 mass % based on the total solid content.

9. The resin composition according to any one of claims 1 to 3, which does not contain a polymerizable compound or contains a polymerizable compound in an amount of 10 parts by mass or less per 100 parts by mass of the resin.

10. The resin composition according to any one of claims 1 to 3, which contains a polymerizable compound in an amount of 1 to 10 parts by mass per 100 parts by mass of the resin.

11. The resin composition according to any one of claims 1 to 3, wherein the imidization rate is 55% or more and less than 70%.

12. The resin composition according to any one of claims 1 to 3, which is a negative type photosensitive resin composition.

13. The resin composition according to any one of claims 1 to 3, which is used for forming an interlayer insulating film for a rewiring layer.

14. A cured product obtained by curing the resin composition according to any one of claims 1 to 3.

15. A laminate comprising two or more layers of the cured product according to claim 14, and including a metal layer between any two of the layers of the cured product.

16. A method for producing a cured product, comprising a film-forming step of applying the resin composition according to any one of claims 1 to 3 onto a substrate to form a film.

17. The method for producing a cured product according to claim 16, comprising an exposure step of selectively exposing the film to light, and a development step of developing the film with a developer to form a pattern.

18. A method for producing a cured product according to claim 16, comprising a heating step of heating the film at 50 to 450°C.

19. A method for producing a laminate, comprising the method for producing the cured product according to claim 16.

20. A method for producing a semiconductor device, comprising the method for producing the cured product according to claim 16.

21. A semiconductor device comprising the cured product according to claim 14.

22. A method for producing a resin, comprising: synthesizing a polyimide oligomer having an amino group at its terminal; and reacting the polyimide oligomer with a compound represented by the following formula (A-1): In formula (A-1), A ４１ and A ４２ Each independently represents -O- or -NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, R ４１ and R ４２ are each independently a hydrogen atom or a monovalent organic group; X ４ is a tetravalent organic group.

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