Imaging array having storage function and manufacturing method therefor, and electronic device

Abstract

The present application discloses an imaging array having a storage function and a manufacturing method therefor, and an electronic device. The array comprises: a plurality of photoelectric storage components, the plurality of photoelectric storage components being arranged in an array, wherein each photoelectric storage component comprises a substrate, a source, a drain, a channel layer, an insulating dielectric layer, a floating gate layer, a photosensitive dielectric layer, and a gate, the photosensitive dielectric layer exhibits insulator properties in a dark state, and the photosensitive dielectric layer exhibits semiconductor properties under bandgap-matched light irradiation; and a plurality of control lines, one control line being connected to one row or one column of photoelectric storage components, and the voltage on the control line is a write voltage, an erase voltage, a read voltage, a fully turn-on voltage or a fully turn-off voltage. The photoelectric storage components are controlled in light of bandgap-matched light irradiation, thereby achieving an integrated sensing-storage function.

Description

Imaging array with storage function, preparation method thereof, and electronic device

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on November 24, 2023, with application number 202311583846.8, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of semiconductor technology, for example, to an imaging array with storage function, a preparation method thereof, and an electronic device. Background Art

[0003] With the development of semiconductor technology, the application of semiconductor devices is becoming more and more extensive, for example, in the fields of solar-blind ultraviolet imaging, imaging systems, and storage.

[0004] In the field of solar-blind ultraviolet imaging, related art provides semiconductor components capable of sensing solar-blind ultraviolet light. However, these technologies do not disclose practical imaging arrays. They only disclose non-crossed arrays composed of independent components or cross-linked arrays without crosstalk suppression, neither of which are practically applicable.

[0005] In the field of imaging systems, the imaging systems of related technologies are still based on the traditional von Neumann architecture, in which sensing, storage and computing are separated from each other. For example, the sensor arrays of related technologies only have the function of sensing, and have problems of high energy consumption and low efficiency, and cannot adapt to the needs of artificial intelligence and big data processing.

[0006] Summary of the Invention

[0007] The present application provides an imaging array with storage function, a preparation method thereof, and an electronic device to realize the sensing and storage integration of the array and the practical application of the array.

[0008] According to one aspect of the present application, an imaging array with a storage function is provided, comprising:

[0009] A plurality of optoelectronic storage components, wherein the plurality of optoelectronic storage components are arranged in an array; wherein the optoelectronic storage components include a substrate, a source electrode, a drain electrode, a channel layer, an insulating dielectric layer, a floating gate layer, a photosensitive dielectric layer, and a gate electrode, wherein the photosensitive dielectric layer has insulating properties in a dark state and has semiconductor properties under bandgap-matched light irradiation;

[0010] Multiple control lines, one of which is connected to a row or a column of the optoelectronic storage components; the voltage on the control line is a write voltage, an erase voltage, a read voltage, a fully-on voltage, or a fully-off voltage, and the optoelectronic storage components are controlled in conjunction with the bandgap-matched light irradiation to achieve integrated sensing and storage functions.

[0011] According to another aspect of the present application, there is provided a method for preparing an imaging array with a storage function as described in any embodiment of the present application, comprising:

[0012] A plurality of the optoelectronic storage components and a plurality of the control lines are formed on a substrate.

[0013] According to another aspect of the present application, an electronic device is provided, comprising: an imaging array with a storage function as described in any embodiment of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] FIG1 is a schematic structural diagram of an imaging array with a storage function provided in an embodiment of the present application;

[0015] FIG2 is a schematic structural diagram of an optoelectronic storage component provided in an embodiment of the present application;

[0016] FIG3 is a schematic diagram showing a comparison of transfer characteristic curves of an optoelectronic storage device after writing and erasing according to an embodiment of the present application;

[0017] 4 is a schematic diagram comparing transfer characteristic curves of an optoelectronic storage device provided in an embodiment of the present application read at different times after writing with the transfer characteristic curve before writing;

[0018] FIG5 is a schematic diagram showing a comparison of transfer characteristic curves of an optoelectronic storage device provided in an embodiment of the present application after being irradiated and written with light at different optical power densities;

[0019] FIG6 is a waveform diagram of a threshold voltage offset under light writing at different wavelengths provided by an embodiment of the present application;

[0020] FIG7 is a schematic structural diagram of another imaging array with storage function provided in an embodiment of the present application;

[0021] 8 is a schematic diagram of gate line and drain line voltage application states when an imaging array with a storage function according to an embodiment of the present application performs data reading;

[0022] FIG9 is a schematic structural diagram of another imaging array with storage function provided in an embodiment of the present application;

[0023] FIG10 is a schematic structural diagram of another imaging array with storage function provided in an embodiment of the present application;

[0024] FIG11 is a schematic diagram of a sensing imaging result formed in each step of a sensing imaging method provided in an embodiment of the present application;

[0025] FIG12 is a schematic diagram of a sensing imaging result formed in each step of another sensing imaging method provided in an embodiment of the present application;

[0026] FIG13 is a schematic flow chart of a method for preparing an imaging array with a storage function provided in an embodiment of the present application. DETAILED DESCRIPTION

[0027] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in a sequence other than those illustrated or described herein. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0028] The present invention provides an imaging array with a storage function. FIG1 is a schematic diagram of the structure of an imaging array with a storage function provided by the present invention. Referring to FIG1 , the imaging array with a storage function has a crossbar array architecture. The imaging array with a storage function includes:

[0029] A plurality of optoelectronic storage components 100 are arranged in an array; the optoelectronic storage components 100 are capable of sensing bandgap-matched light irradiation;

[0030] Multiple control lines 200 are provided, one of which connects a row or column of optoelectronic storage devices 100. The voltages on the control lines 200 are write voltage, erase voltage, read voltage, fully on voltage, or fully off voltage, and are used in conjunction with bandgap-matched light irradiation to control the optoelectronic storage devices 100, thereby achieving integrated sensing and storage functions. The write voltage refers to the gate voltage that enables data writing to the optoelectronic storage device 100, the erase voltage refers to the gate voltage that enables data erasing from the optoelectronic storage device 100, the read voltage refers to the gate voltage that enables data reading from the optoelectronic storage device 100, the fully on voltage is the gate voltage that fully turns the optoelectronic storage device on, and the fully off voltage is the gate voltage that fully turns the optoelectronic storage device off. In some embodiments, during data reading, the gate voltage of the selected optoelectronic storage device 100 is different from the gate voltage of the unselected optoelectronic storage device 100 , and the drain voltage of the selected optoelectronic storage device 100 is different from the drain voltage of the unselected optoelectronic storage device 100 .

[0031] To illustrate the working principle of the embodiment of the present application, the structure and function of the optoelectronic storage component 100 are described. Figure 2 is a schematic structural diagram of an optoelectronic storage component provided by an embodiment of the present application. Referring to Figure 2, the optoelectronic storage component 100 includes a substrate 110, a source electrode 120, a drain electrode 130, a channel layer 140, an insulating dielectric layer 150, a floating gate layer 160, a photosensitive dielectric layer 170, and a gate 180. The photosensitive dielectric layer 170 has insulating properties in the dark state and has semiconductor properties under bandgap-matched light irradiation.

[0032] Bandgap-matched light irradiation means that the energy of the photons is equal to or greater than the bandgap width of the semiconductor layer, that is, the photosensitive dielectric layer 170 can generate photogenerated carriers under such bandgap-matched light irradiation. Potential barriers are formed between the floating gate layer 160 and the insulating dielectric layer 150, and between the floating gate layer 160 and the photosensitive dielectric layer 170. Therefore, there are certain band steps between the floating gate layer 160 and the insulating dielectric layer 150, and between the floating gate layer 160 and the photosensitive dielectric layer 170, so that electrons written into the floating gate layer 160 from the photosensitive dielectric layer 170 side can be stably stored in the floating gate layer 160. For example, when data is stored using gate injection, the optoelectronic storage device 100 utilizes the insulating properties of the photosensitive dielectric layer 170 in the dark state and its semiconductor properties under certain light irradiation. By applying a set gate voltage and a light pulse, electrons can be written into the floating gate layer 160. Furthermore, by simply applying a set gate voltage and a light pulse, electrons in the floating gate layer 160 can be erased. Furthermore, potential barriers are formed between the floating gate layer 160 and the insulating dielectric layer 150, and between the floating gate layer 160 and the photosensitive dielectric layer 170, enabling electrons to be stably stored in the floating gate layer 160 after being written.

[0033] It should be noted that the optoelectronic storage device has a symmetrical structure, and the source 120 and the drain 130 can be interchanged. That is, in some embodiments, the left side is the source 120 and the right side is the drain 130; in other embodiments, the right side is the source 120 and the left side is the drain 130.

[0034] Unless otherwise specified, the positions of the substrate 110 , source 120 , drain 130 , channel layer 140 , insulating dielectric layer 150 , floating gate layer 160 , photosensitive dielectric layer 170 and gate 180 may be set as needed as long as normal operation can be achieved.

[0035] In the above embodiment, the material of the photosensitive medium layer 170 is not limited, as long as it exhibits insulating properties in the dark state and semiconductor properties under certain light irradiation. Optionally, the material of the photosensitive medium layer 170 includes at least one of an inorganic metal oxide, an inorganic metal nitride, an inorganic non-metallic nitride, and an organic polymer. Optionally, the material of the photosensitive medium layer 170 includes at least one of gallium oxide, boron nitride, aluminum nitride, and zinc oxide. Preferably, the material of the photosensitive medium layer 170 includes gallium oxide. This configuration facilitates satisfying the different state characteristics of the photosensitive medium layer 170 in the dark state and under light irradiation.

[0036] In the above embodiment, optionally, the material of the floating gate layer 160 includes at least one of gold (Au), silicon (Si), platinum (Pt) and palladium (Pd). Preferably, the material of the floating gate layer 160 includes Au.

[0037] In the above embodiment, optionally, the material of the gate 180 includes at least one of Au, Pt and Pd. Preferably, the material of the gate 180 includes Au.

[0038] In the above embodiment, substrate 110 is a rigid substrate or a flexible substrate. Optionally, substrate 110 is a rigid substrate, and its material includes at least one of silicon, sapphire, and quartz glass. Optionally, substrate 110 is a flexible substrate, and its material includes at least one of polyethylene naphthalate, polyethylene terephthalate, polyimide, polymethyl methacrylate, polydimethylsiloxane, polyvinyl chloride, polycarbonate, polystyrene, and organic glass. Preferably, substrate 110 is made of quartz glass.

[0039] In the above embodiment, the material of the source electrode 120 optionally includes at least one of indium tin oxide (ITO), molybdenum (Mo), titanium (Ti), Au, a Ti / Au alloy, TCO conductive glass (e.g., FTO), chromium (Cr), copper (Cu), silver (Ag), Pd, and graphene. Preferably, the material of the source electrode 120 includes ITO.

[0040] In the above embodiment, the material of the drain electrode 130 may include at least one of ITO, Mo, Ti, Au, Ti / Au alloy, FTO, Cr, Cu, Ag, Pd, and graphene. Preferably, the material of the drain electrode 130 includes ITO. Optionally, the source electrode 120 and the drain electrode 130 may be made of the same material.

[0041] In the above embodiment, the material of the channel layer 140 is optionally selected from the group consisting of a silicon semiconductor, an oxide semiconductor, an organic semiconductor, and a two-dimensional semiconductor. Alternatively, the material of the channel layer 140 includes at least one of Si, indium gallium zinc oxide (IGZO), gallium nitride (GaN), aluminum gallium nitride (AlGaN), gallium arsenide (GaAs), and aluminum gallium arsenide (AlGaAs).

[0042] In the above embodiment, optionally, the material of the insulating dielectric layer 150 includes at least one of aluminum oxide, hafnium oxide, silicon oxide, aluminum nitride, boron nitride, and an insulating polymer. Preferably, the material of the insulating dielectric layer 150 includes aluminum oxide.

[0043] Based on the above embodiment, the materials of the optoelectronic storage component are optionally selected as follows: the substrate 110 is made of glass; the source electrode 120 and the drain electrode 130 are made of ITO; the channel layer 140 is made of IGZO; the insulating dielectric layer 150 is made of Al2O3; the floating gate layer 160 is made of Au; the photosensitive dielectric layer 170 is made of Ga2O3; and the gate 180 is made of Au. The characteristics of this optoelectronic storage component are verified.

[0044] FIG3 is a comparative diagram of the transfer characteristic curves of an optoelectronic storage device provided in an embodiment of the present application after writing and erasing. For example, the optoelectronic storage device provided in the above embodiment is used to perform writing and erasing operations. The writing method is a -5V gate voltage pulse combined with a light power density of 150μW cm -2 , 254nm light pulse with a pulse width of 1s. The erasing method is a 5V gate voltage pulse combined with a light power density of 150μW cm -2 , a 254nm light pulse with a pulse width of 1s. As shown in Figure 3, the horizontal axis represents the gate voltage of the optoelectronic storage device, and the vertical axis represents its source-drain current. After writing, the threshold voltage shifts to the right by approximately 10V; after erasing, the threshold voltage shifts to the left by approximately 10V, returning to its initial position.

[0045] FIG4 is a schematic diagram showing a transfer characteristic curve of an optoelectronic storage device provided in an embodiment of the present application, read at different times after writing, and a transfer characteristic curve before writing. For example, the optoelectronic storage device provided in the above embodiment is still used for writing. The writing method is a -5V gate voltage pulse combined with an optical power density of 150μW cm -2 , a 254nm light pulse with a pulse width of 1s. As shown in Figure 4, the horizontal axis is the gate voltage of the optoelectronic storage component, and the vertical axis is its source-drain current. After writing, the threshold voltage moves to the right by about 10V; after 5 hours and 10 hours, the transfer characteristic curve still remains at the position just after writing. This shows that the optoelectronic storage component has a large storage window after writing, and the storage window is basically maintained after 10 hours. The optoelectronic storage component provided in the embodiment of the present application has good storage characteristics.

[0046] FIG5 is a comparative diagram of the transfer characteristic curves of an optoelectronic storage component provided in an embodiment of the present application after light irradiation writing at different light power densities. For example, the optoelectronic storage component provided in the above embodiment is still used for writing. During writing, the gate voltage pulse is fixed at -5V, the light pulse width is fixed at 1s, and the wavelength is 254nm. As shown in FIG5 , the horizontal axis is the gate voltage of the optoelectronic storage component, and the vertical axis is its source-drain current. The range of light power density is 1.17μW cm -2 Up to 150 μW cm -2. The greater the optical power density during writing, the more the threshold voltage of the optoelectronic storage component shifts to the right. This shows that, on the one hand, the optoelectronic storage component can be used as a dosimeter; on the other hand, the optoelectronic storage component can be used as a multi-state storage device. It can be seen that compared with flash memory devices with 2-bit storage capacity, the embodiment of the present application utilizes the orthogonal characteristics of optical writing and electrical reading to achieve multi-state storage of optoelectronic storage components, which is more conducive to alleviating the pressure of data storage in the big data era.

[0047] FIG6 is a waveform diagram of the offset of the threshold voltage under different wavelength light writing provided by an embodiment of the present application. For example, the optoelectronic storage component provided by the above embodiment is still used to perform the writing operation. As shown in FIG6 , the horizontal axis is the wavelength of light irradiation, and the vertical axis is the threshold voltage offset of the optoelectronic storage component after writing. It shows that after the optoelectronic storage component is written with light of a wavelength of 250nm, its threshold voltage offset reaches the peak value of the response. Moreover, after the optoelectronic storage component is written with light of a wavelength exceeding 280nm, its threshold voltage offset is close to 0, that is, the optoelectronic storage component after being written with light of a wavelength exceeding 280nm has almost no threshold voltage drift, that is, no light response. Therefore, the optoelectronic storage component is a very good solar blind detection device, and the application of the optoelectronic storage component to solar blind detection does not require additional filters.

[0048] Based on the optoelectronic storage component provided in the above embodiment, the structure of an imaging array with storage function formed by using the optoelectronic storage component is described below.

[0049] 1 , illustratively, the control line 200 connecting a column of optoelectronic storage components 100 is configured to control the gates of multiple optoelectronic storage components 100 , and the control line 200 connecting a row of optoelectronic storage components 100 is configured to control the sources 120 or drains 130 of multiple optoelectronic storage components 100 .

[0050] The array can realize integrated sensing and storage. Optionally, the control method of the array includes at least one of photosensitive writing imaging storage and photosensitive erasing imaging storage. That is, the array can realize photosensitive writing imaging storage or photosensitive erasing imaging storage.

[0051] Exemplarily, the working principle of the array to implement photosensitive writing imaging storage is that when the array is in a standby state, that is, ready for imaging, the voltage on the control line 200 of all columns is set to the write voltage of the optoelectronic storage element 100. In the standby state, when the optoelectronic storage element 100 senses bandgap-matched light irradiation, data can be written and the pattern corresponding to the light irradiation is sensed. Since the optoelectronic storage element 100 in the array also has a storage function, the pattern can be stored. Among them, one optoelectronic storage element 100 is a pixel of the pattern. When it is necessary to read the array data, a read gate voltage is applied to the control line 200 corresponding to the gate of the pixel to be read, and a read drain voltage is applied to the control line 200 corresponding to its drain. When it is necessary to refresh the array, an erase voltage pulse is applied to the control line 200 corresponding to the gate of all pixels while irradiating all pixels with a light pulse.

[0052] Exemplarily, the operating principle of this array for photosensitive erasable imaging storage is as follows: before the array is ready for imaging, the voltage on all column control lines 200 is set to the write voltage of the optoelectronic storage components 100, all optoelectronic storage components 100 are set to the write state, and all pixels are simultaneously irradiated with a light pulse, i.e., data is written to all pixels. When the array is in a standby state, i.e., ready for imaging, the control lines 200 of multiple columns of optoelectronic storage components 100 are connected, and the voltage on these control lines 200 is set to the erase voltage of the optoelectronic storage components 100. In the standby state, when the optoelectronic storage components 100 sense bandgap-matched light irradiation, data can be erased, and the erase pattern corresponding to the light irradiation is sensed. Because the optoelectronic storage components 100 in the array also have storage functions, this pattern can be stored. Here, one optoelectronic storage component 100 represents one pixel of the pattern. When array data needs to be read, a read gate voltage is applied to the control line 200 corresponding to the gate of the pixel to be read, and a read drain voltage is applied to the control line 200 corresponding to the drain of the pixel to be read.

[0053] It can be seen that the embodiment of the present application provides an imaging array with a storage function, which is a cross array architecture, and is provided with a plurality of optoelectronic storage components 100 and a plurality of control lines 200, wherein the plurality of optoelectronic storage components 100 are arranged in an array, and a control line 200 connects a row or a column of optoelectronic storage components 100; the optoelectronic storage component 100 includes a substrate 110, a source 120, a drain 130, a channel layer 140, an insulating dielectric layer 150, a floating gate layer 160, a photosensitive dielectric layer 170 and a gate 180, and the photosensitive dielectric layer 170 has insulating properties in the dark state and semiconductor properties under bandgap-matched light irradiation. The embodiment of the present application is arranged in this way, which realizes the sensing and storage function of the array, improves data processing efficiency, reduces energy consumption, is conducive to adapting to the needs of artificial intelligence and big data processing, and is conducive to practical application.

[0054] Based on the above embodiments, there are many ways to set up the imaging array with storage function. Several of them are described below, but they are not intended to limit the present application.

[0055] FIG7 is a schematic diagram of the structure of another imaging array with storage function provided in an embodiment of the present application. Referring to FIG7 , in one embodiment, the plurality of control lines 200 optionally include a plurality of gate lines 210 and a plurality of drain lines 220. In FIG7 , the gate lines 210 extend along the column direction Y, and the plurality of gate lines 210 are arranged in sequence along the row direction X; the drain lines 220 extend along the row direction X, and the plurality of drain lines 220 are arranged in sequence along the column direction Y. The gate lines 210 may also be referred to as column lines, and the drain lines 220 may also be referred to as row lines.

[0056] A row of optoelectronic storage devices 100 is connected in series, with the source 120 and drain 130 of two adjacent optoelectronic storage devices 100 connected, meaning that adjacent optoelectronic storage devices 100 share the same source 120 and drain 130. For example, the source 120 of the optoelectronic storage device 100 on the left is connected to the drain 130 of the optoelectronic storage device 100 on the right. A drain line 220 is electrically connected to the drain 130 at the end of a row of optoelectronic storage devices 100; a gate line 210 is electrically connected to all gates 180 of a column of optoelectronic storage devices 100; and the source 120 at the end of a row of optoelectronic storage devices 100 is grounded.

[0057] For example, the working principle of the array shown in FIG7 is as follows: when performing photosensitive write imaging storage, a first write voltage is applied to all gate lines 210, causing the array to enter a standby state; wherein, the array in the standby state can sense the pattern of bandgap-matched light irradiation and write data and store it; each optoelectronic storage element 100 is a pixel of the pattern. When reading data, a second read voltage is applied to the drain line 220 corresponding to the set pixel, a first read voltage is applied to the gate line 210 corresponding to the set pixel, and a first fully-on voltage is applied to the other gate lines 210, so that the data stored in the set pixel is read. When refreshing the array, for photosensitive write imaging storage, a first erase voltage is applied to all gate lines 210, and all optoelectronic storage elements 100 are irradiated with bandgap-matched light to refresh the array. For photosensitive erase imaging storage, a first write voltage is applied to all gate lines, and all optoelectronic storage elements are irradiated with bandgap-matched light to refresh the array.

[0058] Among them, when reading data, the embodiment of the present application applies a second reading voltage to the drain line 220 corresponding to the set pixel, and applies a first fully turned-on voltage to the other gate lines 210, so that the pixel being read is not interfered with by other pixels, thereby suppressing crosstalk. However, in the related art, based on the photodetector element of the related art, there is serious crosstalk between pixels. Each pixel in the cross array needs to be composed of a detector element and a switching component (the switching component can be a diode or a transistor), and the role of the switching component is to suppress crosstalk between pixels. The addition of the switching component increases the difficulty and cost of preparation on the one hand, and reduces the pixel density on the other hand, so the imaging effect is extremely poor.

[0059] From the above analysis, it can be seen that the embodiments of the present application can achieve the effect of suppressing crosstalk by controlling it through the characteristics of the array and the optoelectronic storage device 100 itself without adding switching components. Therefore, the embodiments of the present application are conducive to reducing the difficulty and cost of manufacturing the array, thereby increasing the pixel density of the array and improving the imaging effect.

[0060] For example, the array shown in FIG7 uses a first write voltage of -5 V, a first erase voltage of 5 V, a first read voltage of -4 V, and a second read voltage of 1 V. The bandgap-matched light irradiation used to refresh the array has a pulse width of 1 s and a light intensity of 200 μW cm -2 The 254nm light pulse is applied, and the first fully turned-on voltage is 15V. By applying a gate voltage of -5V to all gate lines 210 and a drain voltage of 0V to all drain lines 220, the array enters the standby state; wherein, the array in the standby state can sense a light power density of 150μW cm -2 , a 254nm light pulse with a pulse width of 1s is used to write data and store it, and each optoelectronic storage element 100 is a pixel of the pattern.

[0061] FIG8 is a schematic diagram illustrating the gate and drain line voltage application states during data reading of an imaging array with storage functionality provided by an embodiment of the present application. Referring to FIG8 , when reading data from pixel 109, a drain voltage of 1V is applied to the drain line 220 corresponding to pixel 109, a gate voltage of -4V is applied to the gate line 210 corresponding to pixel 109, and a gate voltage of 15V is applied to the other gate lines 210, ensuring that all pixels in the row except pixel 109 remain fully turned on, so that the data stored in pixel 109 can be read.

[0062] When refreshing the array, a gate voltage of 5V is applied to all gate lines 210, a drain voltage of 0V is applied to the drain lines 220, and a light power density of 200 μW cm -2, a 254nm light pulse with a pulse width of 1s irradiates all the optoelectronic storage components 100 to refresh the array.

[0063] FIG9 is a schematic diagram of the structure of another imaging array with storage function provided in an embodiment of the present application. Referring to FIG9 , in another embodiment, the plurality of control lines 200 optionally include a plurality of gate lines 210 and a plurality of drain lines 220. In FIG9 , the gate lines 210 extend along the column direction Y, and the plurality of gate lines 210 are arranged in sequence along the row direction X; the drain lines 220 extend along the row direction X, and the plurality of drain lines 220 are arranged in sequence along the column direction Y. The gate lines 210 may also be referred to as column lines, and the drain lines 220 may also be referred to as row lines.

[0064] The optoelectronic storage device 100 includes a first optoelectronic storage device 101 and a second optoelectronic storage device 102. The first optoelectronic storage devices 101 and the second optoelectronic storage devices 102 are alternately connected in a row, with the first side of the first optoelectronic storage device 101 being a drain 130 and the second side being a source 120. The drain 130 of the first optoelectronic storage device 101 is electrically connected to the drain 130 of the second optoelectronic storage device 102 located on the first side of the first optoelectronic storage device 101, and the source 120 of the first optoelectronic storage device 101 is electrically connected to the source 120 of the second optoelectronic storage device 102 located on the second side of the first optoelectronic storage device 101. A drain line 220 is electrically connected to all drains 130 of the optoelectronic storage devices 100 in a row, all sources 120 of the optoelectronic storage devices 100 are grounded, and a gate line 210 is electrically connected to all gates 180 of the optoelectronic storage devices 100 in a column.

[0065] For example, the working principle of the array shown in Figure 9 is as follows: when performing photosensitive writing imaging storage, a first write voltage is applied to all gate lines 210 to put the array into a standby state; wherein, the array in the standby state can sense the pattern of bandgap-matched light irradiation and write data and store it; each optoelectronic storage component 100 is a pixel of the pattern. When reading data, a second read voltage is applied to the drain line 220 corresponding to the set pixel, a first read voltage is applied to the gate line 210 corresponding to the set pixel, and a first fully closed voltage is applied to the other gate lines 210, so that the data stored in the set pixel is read. When refreshing the array, a first erase voltage is applied to all gate lines 210 and all optoelectronic storage components 100 are irradiated with bandgap-matched light to refresh the array.

[0066] Among them, when reading data, the embodiment of the present application applies a second reading voltage to the drain line 220 corresponding to the set pixel, and applies a first completely closed voltage to the other gate lines 210, which can prevent the pixel being read from being interfered with by other pixels, thereby suppressing crosstalk. Therefore, the embodiment of the present application can control the array and the optoelectronic storage component 100 through its own characteristics without adding switching components to suppress crosstalk, thereby achieving the effect of suppressing crosstalk. Therefore, the embodiment of the present application is conducive to reducing the difficulty and cost of manufacturing the array, thereby increasing the pixel density of the array and improving the imaging effect.

[0067] FIG10 is a schematic diagram of the structure of another imaging array with storage function provided in an embodiment of the present application. Referring to FIG10 , in another embodiment, the plurality of control lines 200 optionally include a plurality of gate lines 210, a plurality of drain lines 220, and a plurality of source lines 230. In FIG10 , the gate lines 210 extend along the column direction Y, and the plurality of gate lines 210 are sequentially arranged along the row direction X; the drain lines 220 extend along the row direction X, and the plurality of drain lines 220 are sequentially arranged along the column direction Y; and the source lines 230 extend along the column direction Y, and the plurality of source lines 230 are sequentially arranged along the row direction X.

[0068] Among them, a drain line 220 is electrically connected to all drains 130 of a row of optoelectronic storage components 100; a gate line 210 is electrically connected to all gates 180 of a column of optoelectronic storage components 100; and a source line 230 is electrically connected to all sources 120 of a column of optoelectronic storage components 100.

[0069] In other embodiments, the source lines 230 may be arranged to extend along the row direction X, and a plurality of source lines 230 may be arranged in sequence along the column direction Y.

[0070] For example, the operating principle of the array shown in FIG10 is as follows: when performing photosensitive writing imaging storage, a first write voltage is applied to all gate lines 210, causing the array to enter a standby state; wherein, the array in the standby state can sense the pattern of bandgap-matched light irradiation and write data and store it; each optoelectronic storage component 100 is a pixel of the pattern. When reading data, a second read voltage is applied to the drain line 220 corresponding to the set pixel, a third read voltage is applied to the source line 230 corresponding to the set pixel, a first read voltage is applied to the gate line 210 corresponding to the set pixel, and a first fully closed voltage is applied to the other gate lines 210, so that the data stored in the set pixel is read. When refreshing the array, a first erase voltage is applied to all gate lines 210 and all optoelectronic storage components 100 are irradiated with bandgap-matched light to refresh the array.

[0071] Among them, when reading data, the embodiment of the present application applies a first reading voltage to the gate line 210 corresponding to the set pixel, and applies a first completely closed voltage to the other gate lines 210, so that the pixel being read is not interfered with by other pixels, thereby suppressing crosstalk. Therefore, the embodiment of the present application can control the array and the optoelectronic storage component 100 through its own characteristics without adding switching components to suppress crosstalk, thereby achieving the effect of suppressing crosstalk. Therefore, the embodiment of the present application is conducive to reducing the difficulty and cost of preparing the array, thereby improving the pixel density of the array and improving the imaging effect.

[0072] On the basis of the above-mentioned embodiment, the embodiment of the present application also verifies the sensing-storage integrated function of the imaging array with storage function shown in Figure 7. First, verification of photosensitive writing imaging storage is performed. Figure 11 is a schematic diagram of the sensing-storage imaging results formed in each step of a sensing-storage imaging method provided by an embodiment of the present application. Referring to Figure 11, in S110, the array is controlled to enter the standby state, a light-transmitting metal mask in the shape of "E" is placed above the array, and a 254nm handheld ultraviolet lamp is used to irradiate for 1s, and the array is imaged. The data is read for the first time, and an ultra-high contrast imaging of "E" is obtained. Among them, each square represents a pixel corresponding to an optoelectronic storage component 100, black represents written data, and white represents unwritten data.

[0073] In S120, one hour after the first data reading, the data was read again, and the image of "E" was still clearly visible, proving the function of integrated sensing and storage.

[0074] In S130 , the array is erased and refreshed. After the refresh, the array has no data. After reading the data again, the image of “E” is no longer displayed, and the current is restored to the initial state.

[0075] In S140 , the imaging step of S110 is repeated, and the data is read for the first time to obtain an imaging of “E” with ultra-high contrast.

[0076] In S150 and S160, the data were read 1 hour and 2 hours after imaging, respectively, and both show a clear "E" image. Figure 11 demonstrates that the array can not only clearly image, but also has the functions of integrated sensing and storage and continuous imaging refresh.

[0077] Second, verify the photosensitive erasure imaging storage. FIG12 is a schematic diagram of the photosensitive imaging results formed in each step of another photosensitive imaging method provided by an embodiment of the present application. Referring to FIG12, in S210, a gate voltage of -5V is applied to all gate lines 210, and a light power density of 150μW cm is used. -2, a 254nm light pulse with a pulse width of 1s is used to illuminate all the optoelectronic storage components 100, setting all the optoelectronic storage components to the write state so that data is written to all pixels; by applying a gate voltage of 5V to all the gate lines 210, the array enters the standby state, a metal mask with a light-transmitting shape of "E" is placed above the array, and a 254nm handheld ultraviolet lamp is used to irradiate for 1s, and the array is imaged. The first data reading results in an ultra-high contrast imaging of "E". Unlike Figure 11, the imaging of "E" is inverted. This is because when performing photosensitive erasure imaging, the light transmitted by the metal mask with a light-transmitting shape of "E" can erase the data in the corresponding pixel and store it.

[0078] In S220, one hour after the first data reading, the data was read again, and the image of "E" was still clearly visible, proving the function of sensing and storage integration.

[0079] In S230 , the array is erased and refreshed, and data is rewritten into all pixels of the refreshed array. When the data is read again, the image of “E” is no longer displayed, and the current is restored to the initial state.

[0080] In S240 , the imaging step of S210 is repeated, and the data is read for the first time to obtain an imaging of “E” with ultra-high contrast.

[0081] In S250 and S260, the data is read one and two hours after imaging, respectively, both showing a clear "E" image. Figure 12 demonstrates that the array not only can produce clear images but also has integrated sensing and storage capabilities and continuous imaging refresh capabilities. Furthermore, it demonstrates the diverse imaging methods available based on the array architecture of the optoelectronic storage device 100.

[0082] In summary, the present invention provides an imaging array fabricated using optoelectronic storage components based on a photosensitive dielectric layer. This array has at least the following effects:

[0083] (1) This imaging array does not suffer from the crosstalk problem found in related art imaging arrays, and does not require the addition of additional switching components to suppress crosstalk. This is because the optoelectronic storage component 100 used in the embodiment of the present application is a transistor structure and can be read after imaging is completed, thus avoiding the impact of crosstalk caused by illumination. Therefore, the embodiment of the present application reduces the difficulty and cost of preparing the crossbar array.

[0084] (2) The imaging array has a storage function and has good application prospects in the fields of sensor storage computing and artificial vision chips, avoiding the high power consumption and high latency faced by the current von Neumann architecture.

[0085] The embodiments of the present application can be applied to at least the following application scenarios:

[0086] (1) The embodiments of the present application can be applied to the field of solar-blind ultraviolet imaging. For example, practical application scenarios such as high-voltage corona monitoring, fire warning, and missile tail flame detection. For example, the excellent imaging capabilities of the imaging array with storage function provided by the embodiments of the present application can quickly determine the location of a corona or flame emitting solar-blind ultraviolet light.

[0087] (2) The embodiments of the present application can be applied to the field of solar-blind ultraviolet communication. The imaging array with storage function provided by the embodiments of the present application can realize the simultaneous decoding and storage of multi-channel solar-blind ultraviolet light.

[0088] (3) The embodiments of the present application can be applied to the field of optoelectronic storage. Based on the imaging array with storage function provided by the embodiments of the present application, excellent multi-state storage performance can be achieved by changing parameters such as write voltage, optical pulse width, and optical power density. Moreover, by replacing the material of the photosensitive medium layer, the application wavelength can be adjusted to the application field of solar-blind ultraviolet, and its response wavelength can be adjusted to, for example, the shallow ultraviolet, visible, and infrared bands.

[0089] (4) The embodiments of the present application can be applied to the field of integrated sensing, storage and computing or artificial vision chips. The imaging array with storage function provided by the embodiments of the present application can integrate sensing, storage and computing at the same time. The potential computing function comes from the ability to continuously adjust the resistance of the device through continuous electrical pulses or light pulses. Integrated sensing, storage and computing breaks the limitation of the separation of sensing, storage and computing in the traditional von Neumann architecture, greatly improves image processing efficiency and reduces energy consumption. At the same time, the mechanism of integrated sensing, storage and computing is similar to that of the visual system of the human brain, so the device will have great application prospects in the field of artificial vision chips.

[0090] The present application also provides a method for fabricating an imaging array with storage functionality, such as provided in any of the embodiments of the present application. The technical principles and effects produced are similar to those of the aforementioned embodiments and are not further described here. For example, the fabrication method includes forming a plurality of optoelectronic storage components 100 and a plurality of control lines 200 on a substrate 110.

[0091] FIG13 is a flow chart of a method for preparing an imaging array with a storage function provided in an embodiment of the present application. Referring to FIG13 , based on the above embodiment, optionally, the method for preparing an imaging array with a storage function includes the following steps:

[0092] S310 , cleaning the substrate 110 .

[0093] For example, the substrate 110 is a glass substrate, which is cleaned in acetone for 10 minutes, in alcohol for 10 minutes, and in deionized water for 10 minutes in sequence.

[0094] S320 , forming patterns of the source 120 , the drain 130 and part of the control line 200 of all the optoelectronic storage components 100 .

[0095] Exemplarily, the source 120, drain 130, and a portion of the control line 200 (e.g., drain line 220, source line 230) are patterned by photolithography. ITO is deposited by magnetron sputtering, and the photoresist is ultrasonically stripped to complete the patterning of the source 120, drain 130, and a portion of the control line 200 (e.g., drain line 220, source line 230).

[0096] S330 , forming patterns of the channel layers 140 of all the optoelectronic storage components 100 .

[0097] Exemplarily, IGZO is prepared by magnetron sputtering, and the channel layer 140 is patterned by a photolithography-etching method.

[0098] S340 , forming patterns of the insulating dielectric layer 150 of all the optoelectronic storage components 100 .

[0099] Exemplarily, the insulating material Al 2 O 3 is deposited by an atomic layer deposition (ALD) process.

[0100] S350 , forming patterns of the floating gate layer 160 of all the optoelectronic storage devices 100 .

[0101] Exemplarily, the floating gate Au is prepared by magnetron sputtering, and the floating gate layer 160 is patterned by a photolithography-etching method.

[0102] S360 , forming patterns of the photosensitive medium layer 170 of all optoelectronic storage components 100 .

[0103] Exemplarily, the Ga2O3 photosensitive medium layer 170 is prepared by magnetron sputtering.

[0104] S370 , forming patterns of the gate electrodes 180 of all the optoelectronic storage components 100 and part of the control lines 200 .

[0105] Exemplarily, the gate Au is prepared by magnetron sputtering, and the gate 180 and a portion of the control line 200 (eg, the gate line 210 ) are patterned by a photolithography-etching method.

[0106] The preparation of the imaging array with storage function is completed through S310-S370.

[0107] It should be noted that the fabrication process shown in FIG13 is merely an example. In actual applications, the execution steps and the process methods within the steps may be adjusted as needed, and this application does not limit the process. For example, the pattern of the gate electrode 180 and a portion of the control line 200 may be fabricated, and the pattern of the source electrode 120, the drain electrode 130, and a portion of the control line 200 may be fabricated.

[0108] An embodiment of the present application further provides an electronic device, which includes: an imaging array with storage function as provided in any embodiment of the present application. Its technical principles and effects are similar and will not be repeated here.

[0109] It should be understood that the various forms of the processes shown above can be used to reorder, add, or delete steps. For example, the steps described in this application can be performed in parallel, sequentially, or in a different order, as long as the desired results of the technical solution of this application can be achieved. This is not limited herein.

Claims

1. An imaging array with storage function, comprising: a plurality of optoelectronic storage components (100), which are arranged in an array; wherein, the optoelectronic storage component (100) includes a substrate (110), a source electrode (120), a drain electrode (130), a channel layer (140), an insulating dielectric layer (150), a floating gate layer (160), a photosensitive dielectric layer (170), and a gate electrode (180), the photosensitive dielectric layer (170) has an insulator property in the dark state, and the photosensitive dielectric layer (170) has a semiconductor property under light irradiation with bandgap matching; a plurality of control lines (200), one control line (200) is connected to one row or one column of the optoelectronic storage components (100); the voltage on the control line (200) is a write voltage, an erase voltage, a read voltage, a fully on voltage, or a fully off voltage, and cooperates with the light irradiation with bandgap matching to control the optoelectronic storage component (100) to realize the integrated function of sensing and storage.

2. The imaging array with storage function according to claim 1, wherein, the plurality of control lines (200) includes a plurality of gate lines (210) and a plurality of drain lines (220); the optoelectronic storage components (100) in one row are connected in series, and the source electrodes (120) and drain electrodes (130) of two adjacent optoelectronic storage components (100) are connected; one drain line (220) is electrically connected to the drain electrode (130) at the end of one row of the optoelectronic storage components (100); one gate line (210) is electrically connected to all the gate electrodes (180) of one column of the optoelectronic storage components (100); the source electrode (120) at the end of one row of the optoelectronic storage components (100) is grounded.

3. The imaging array with storage function according to claim 1, wherein, the plurality of control lines (200) includes a plurality of gate lines (210) and a plurality of drain lines (220); the optoelectronic storage component (100) includes a first optoelectronic storage component (101) and a second optoelectronic storage component (102); the first optoelectronic storage component (101) and the second optoelectronic storage component (102) in one row are alternately connected, the first side of the first optoelectronic storage component (101) is the drain electrode (130), and the second side is the source electrode (120); the drain electrode (130) of the first optoelectronic storage component (101) is electrically connected to the drain electrode (130) of the second optoelectronic storage component (102) on the first side of the first optoelectronic storage component (101), and the source electrode (120) of the first optoelectronic storage component (101) is electrically connected to the source electrode (120) of the second optoelectronic storage component (102) on the second side of the first optoelectronic storage component (101); One of the leakage lines (220) is electrically connected to all the drains (130) of one row of the optoelectronic storage components (100), all the sources (120) of the optoelectronic storage components (100) are grounded, and one of the gate lines (210) is electrically connected to all the gates (180) of one column of the optoelectronic storage components (100).

4. The imaging array with a storage function according to claim 1, wherein, the multiple control lines (200) include multiple gate lines (210), multiple leakage lines (220) and multiple source lines (230); One of the leakage lines (220) is electrically connected to all the drains (130) of one row of the optoelectronic storage components (100); one of the gate lines (210) is electrically connected to all the gates (180) of one column of the optoelectronic storage components (100); one of the source lines (230) is electrically connected to all the sources (120) of one column of the optoelectronic storage components (100).

5. The imaging array with a storage function according to any one of claims 2-4, wherein, the control method of the array includes at least one of photosensitive writing imaging storage and photosensitive erasing imaging storage.

6. The imaging array with a storage function according to claim 5, wherein, the photosensitive writing imaging storage includes: By applying a first writing voltage to all the gate lines (210), the array is put into the standby state; wherein, the array in the standby state can sense the pattern of the light irradiation with bandgap matching and write data, and store it; each of the optoelectronic storage components (100) is a pixel of the pattern.

7. The imaging array with a storage function according to claim 5, wherein, the photosensitive erasing imaging storage includes: By applying a first writing voltage to all the gate lines (210) and irradiating all the optoelectronic storage components (100) with the light irradiation with bandgap matching, all the optoelectronic storage components (100) are set to the writing state; by applying a first erasing voltage to all the gate lines (210), the array is put into the standby state; wherein, the array in the standby state can sense the pattern of the light irradiation with bandgap matching and erase data, and store it; each of the optoelectronic storage components (100) is a pixel of the pattern.

8. The imaging array with a storage function according to claim 2, wherein, the control method of the array includes data reading, and the data reading includes: By applying a second reading voltage to the leakage line (220) corresponding to the set pixel, applying a first reading voltage to the gate line (210) corresponding to the set pixel, and applying a first fully open voltage to the other gate lines (210), the data stored in the set pixel is read.

9. The imaging array with a storage function according to claim 3, wherein, the control method of the array includes data reading, and the data reading includes: By applying a second read voltage to the drain line (220) corresponding to the set pixel, applying a first read voltage to the gate line (210) corresponding to the set pixel, and applying a first fully off voltage to the other gate lines (210), the data stored in the set pixel is read out.

10. The imaging array with a storage function according to claim 4, wherein, the control method of the array includes data reading, and the data reading includes: By applying a second read voltage to the drain line (220) corresponding to the set pixel, applying a third read voltage to the source line (230) corresponding to the set pixel, applying a first read voltage to the gate line (210) corresponding to the set pixel, and applying a first fully off voltage to the other gate lines (210), the data stored in the set pixel is read out.

11. The imaging array with a storage function according to any one of claims 2-4, wherein, the control method of the array includes data refreshing, and the data refreshing includes: For photosensitive writing imaging storage, by applying a first erasing voltage to all the gate lines (210) and irradiating all the photo-electric storage components (100) with the light irradiation of bandgap matching, the array is refreshed. For photosensitive erasing imaging storage, by applying a first writing voltage to all the gate lines (210) and irradiating all the photo-electric storage components (100) with the light irradiation of bandgap matching, the array is refreshed.

12. A manufacturing method of an imaging array with a storage function according to any one of claims 1-11, comprising: forming a plurality of the photo-electric storage components (100) and a plurality of the control lines on a substrate (110) (200)。 13. An electronic device, comprising: an imaging array with a storage function according to any one of claims 1-11.

Images