Vacuum pump system, film formation apparatus, power supply control method for vacuum pump system, film formation method, and manufacturing method for electronic device

Abstract

Provided as one embodiment of the present invention is a vacuum pump system for exhausting gases from a processing space, said system including: a pump unit that is connected to the processing space and configured so as to exhaust gases from the processing space; a compressor unit that is connected to the pump unit in order to supply and recover a refrigerant; a heating unit that is configured so as to heat the pump unit; and a power supply unit that is configured so as to supply power to the heating unit, and to at least one of the pump unit and the compressor unit.

Description

Vacuum pump system, film formation apparatus, power supply control method for vacuum pump system, film formation method, and electronic device manufacturing method

[0001] The present invention relates to a vacuum pump system, a film deposition apparatus including the vacuum pump system, a power supply control method for the vacuum pump system, a film deposition method using the vacuum pump system, and a method for manufacturing an electronic device.

[0002] Organic electroluminescent (EL) displays have recently been in the spotlight as a popular display device. As self-emitting displays, organic EL displays have superior characteristics to LCD panel displays, such as response speed, viewing angle, and thinness, and are replacing existing LCD panel displays not only in various mobile devices such as smartphones, but also in monitors, televisions, and other devices. They are also expanding their application fields, such as in automotive displays.

[0003] An organic EL display device includes an organic EL element having a multi-layer structure in which a functional layer having a light-emitting layer, which is an organic material layer that emits light, is formed between two opposing electrodes.

[0004] The functional layers and electrode layers of the organic EL element are formed by depositing a film-forming material on a substrate such as glass through a mask in a chamber of a film-forming device.

[0005] An example of a film formation apparatus is an in-line type film formation apparatus, which has a structure in which multiple chambers are linearly connected and a substrate is held by a substrate carrier and moved between the chambers to form a film.

[0006] The deposition chamber is maintained at a high vacuum for the deposition process, and is equipped with a high vacuum pump system that utilizes cryogenic temperatures.

[0007] A cryogenic high vacuum pump system includes a cryopump and a compressor. A refrigerant compressed to high pressure by the compressor is supplied to the cryopump and adiabatically expanded to lower the temperature of the cooling stage (or cryopanel) inside the cryopump to cryogenic temperatures. Gas molecules inside a deposition chamber connected to the cryopump are captured (condensed and / or adsorbed) by the cooling stage cooled to cryogenic temperatures and removed, thereby evacuating the inside of the deposition chamber to a high vacuum.

[0008] As described above, an ultra-low temperature high vacuum pump system using a cryopump removes gas by capturing (condensing / adsorbing) it in an ultra-low temperature cooling stage, so there is a limit to the capacity that can be captured (condensed / adsorbed), and once the capacity limit is reached, the vacuum pumping efficiency drops.

[0009] Therefore, the gas trapped (condensed / adsorbed) in the cooling stage of the cryopump must be periodically vaporized and then discharged outside the cryopump, which is called cryopump regeneration. To regenerate the cryopump, the temperature inside the cryopump, which is maintained at an extremely low temperature, must be raised to a temperature above the vaporization temperature of the gas (e.g., room temperature). For this purpose, a heating means such as an electric heater is used, as described in Patent Document 1.

[0010] Japanese Patent Application Laid-Open No. 2018-150846

[0011] In the conventional cryopump system described in Patent Document 1, the power supply unit for the heating means used when regenerating the cryopump is installed separately from the power supply units for operating the cryopump and compressor, requiring multiple power supply units overall. This results in a problem of the cryopump system becoming larger overall, and the basic design power of a production line for organic EL displays consisting of film deposition equipment equipped with multiple cryopump systems becoming larger.

[0012] A vacuum pump system according to one aspect of the present invention is a vacuum pump system for evacuating a processing space, and includes a pump section connected to the processing space and configured to evacuate the processing space, a compressor section fluidly connected to the pump section, a heating section configured to heat the pump section, and a power supply section configured to supply power to at least one of the pump section and the compressor section and to the heating section.

[0013] Other features of the invention will become apparent from the following description of exemplary embodiments, which proceeds with reference to the accompanying drawings.

[0014] According to the configuration of the present invention, the vacuum pump system can be made smaller and power consumption can be reduced.

[0015] Fig. 1 is a schematic diagram showing the configuration of an in-line type film formation apparatus. Fig. 2 is a schematic diagram showing the configuration of a vacuum pump system according to an embodiment of the present invention. Fig. 3 is a schematic diagram showing the connection relationship between a power supply unit and a pump unit / heating unit of a vacuum pump system according to an embodiment of the present invention. Fig. 4 is a flowchart of the operation and regeneration operations of a vacuum pump system according to an embodiment of the present invention. Fig. 5 is a diagram explaining the configuration of an electronic device manufactured by the film formation apparatus of the present invention.

[0016] The following describes in detail the embodiments of the present invention. However, the following embodiments merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Furthermore, the hardware and software configurations, processing flows, manufacturing conditions, sizes, materials, shapes, and the like of the devices in the following description are not intended to limit the scope of the present invention unless otherwise specified.

[0017] The present invention is preferably applicable to a film formation apparatus that forms a thin film of a desired pattern on the surface of a substrate through a mask. The substrate material can be any material, such as glass, resin, metal, or silicon. The film formation material can be any material, such as organic or inorganic materials (metals or metal oxides). Meanwhile, in the following description, the term "substrate" includes substrate materials on whose surfaces one or more films have already been formed. The technology of the present invention is typically applied to manufacturing apparatuses for electronic devices and optical components. It is particularly preferred for organic electronic devices, such as organic EL displays equipped with organic EL elements and organic EL display devices using such displays. The present invention can also be used in thin-film solar cells and organic CMOS image sensors. However, the application of the present invention is not limited thereto and can be widely used in apparatuses including vacuum chambers.

[0018] 1 is a schematic plan view showing the configuration of an in-line film formation apparatus (500) for manufacturing an organic EL display device according to an embodiment. Organic EL display devices are generally manufactured through a circuit element formation process for forming circuit elements, an organic EL element formation process for forming organic EL elements on a substrate, and a sealing process for forming a protective layer on the formed organic EL elements. The film formation apparatus (500) according to this embodiment is mainly used in the organic EL element formation process.

[0019] The film formation apparatus (500) is equipped with the following chambers: a substrate loading chamber (501), a carrier loading chamber (502), a confluence chamber (503), a pass chamber (504), an inversion chamber (505), a mask assembly chamber (510), an alignment chamber (511), a buffer chamber (512), a film formation chamber (520), a buffer chamber (521), a rotation chamber (522), a buffer chamber (523), a rotation chamber (524), a buffer chamber (525), a film formation chamber (526), ​​a buffer chamber (530), a carrier separation chamber (531), a carrier separation chamber (532), a mask unloading chamber (533), a mask loading chamber (534), a mask transfer chamber (535), an inversion chamber (540), a pass chamber (541), a substrate separation chamber (542), a carrier transfer chamber (543), a carrier unloading chamber (544), and a substrate unloading chamber (545).

[0020] If impurities are present in the chamber space during film formation, the possibility of film formation defects increases, which may cause panel malfunctions. Therefore, the interior of the chamber of the film formation apparatus is evacuated to a vacuum during film formation. Therefore, each chamber is configured as a vacuum chamber. Furthermore, to improve the accuracy of film formation, it is preferable that multiple chambers of the film formation apparatus are connected to a consistent vacuum, and the substrate is moved between the evacuated chambers. Note that in the examples, vacuum refers to a state of space filled with gas at a pressure lower than normal atmospheric pressure (1013 hPa), and the interiors of multiple chambers in the film formation apparatus (500) may be maintained at different vacuum levels depending on the purpose of each chamber.

[0021] In this specification, the devices (e.g., buffer device, pass device, reversing device, alignment device, rotation device, deposition device, etc.) constituting each chamber (e.g., buffer chamber, pass chamber, reversing chamber, alignment chamber, rotation chamber, film formation chamber, etc.) of the film formation apparatus (500) may be referred to as a processing device. When referring to a processing device, the processing device performs a predetermined process (e.g., buffering, pass, reversing, alignment, rotation, deposition process, etc.) on a processing object (e.g., substrate, carrier, and / or mask) according to the function of the chamber.

[0022] Each of the buffer chambers 512, 521, 523, 525, and 530 adjusts the progress and speed when film formation is performed using multiple substrate carriers C. The mask transfer chamber 535 may function as a stocker for storing the masks M when multiple masks M are used, and may also have the function of adjusting the speed of the masks M. This makes it possible to select a mask M according to the desired film formation. The carrier transfer chamber 543 may function as a stocker for storing the substrate carriers C when multiple substrate carriers C are used, and may also have the function of adjusting the speed of the substrate carriers C. By adjusting the speed as described above, the substrate carriers C can be transported at predetermined intervals.

[0023] The film forming apparatus (500) also has a transport means (e.g., transport rollers) for transporting the carrier (C) between and within each chamber. A plurality of transport rollers as the transport means are arranged on both sides of the transport path in the transport direction, and are rotated by a drive mechanism such as an AC servo motor as a drive means to transport the carrier (C) and the mask (M).

[0024] Depending on the chamber, a first transport roller for the mask and a second transport roller for the carrier may be installed to transport the mask (M) and the carrier (C) separately. In this case, the first transport roller for the mask and the second transport roller for the carrier are installed at different heights, and in this embodiment, the second transport roller is installed at a higher position. The carrier (C) is transported along a predetermined transport path that passes through each chamber of the film formation apparatus (500).

[0025] A carrier (C) without a substrate loaded thereon is loaded from the carrier loading chamber (502) and transported in the confluence chamber (503), as indicated by the solid arrow, and a substrate (S) is loaded from the substrate loading chamber (501) and transported to the confluence chamber (503), as indicated by the dashed arrow. In the confluence chamber (503), the substrate (S) is held by the carrier (C). In the confluence chamber (503), the substrate holding surface of the carrier (C) faces vertically upward, and the substrate (S) is mounted on the substrate holding surface of the carrier (C) with the film-forming surface facing vertically upward.

[0026] Subsequently, the carrier (C) carrying the substrate (S) passes through the pass chamber (504) and is inverted upside down in the inversion chamber (505). The inversion chamber (505) is provided with an inversion mechanism that inverts the direction of the substrate holding surface of the carrier (C) upside down in the vertical direction. As the inversion mechanism, a known mechanism that grips the carrier (C) to change its position (direction) may be used. In the inversion chamber (505), the carrier (C) is inverted together with the substrate (S), so that the surface of the substrate (S) to be film-formed faces downward in the vertical direction.

[0027] As indicated by the dotted arrows, a new unused mask (M) is carried in from the mask carry-in chamber (534) and transported to the mask assembly chamber (510) via the carrier separation chamber (532) and the mask delivery chamber (535). As will be described later, a mask that is in use but has not yet reached the end of its life is separated from the carrier (C) in the carrier separation chamber (532) and transported to the mask assembly chamber (510) via the mask delivery chamber (535).

[0028] The carrier (C) that has been turned upside down in the inversion chamber (505) is transported to the mask assembly chamber (510) where it meets with the mask (M) and is mounted on the mask (M).

[0029] The carrier (C) is carried to the alignment chamber (511) with the mask (M) mounted thereon, and is aligned with the mask (M) in the alignment chamber (511). An alignment device is disposed in the alignment chamber (511). The alignment device aligns the carrier (C) (and the substrate (S) held by it) with the mask (M), and places the carrier (C) (substrate (S)) on the mask (M).

[0030] Subsequently, the carrier (C) aligned with the mask (M) proceeds through the buffer chamber (512) to the film-forming chambers (520) (520a to 520d), where a film is formed on the substrate (S). Although four film-forming chambers (520a to 520d) are shown in FIG. 1, the present invention is not limited to this, and the number of film-forming chambers may be changed appropriately taking into consideration the film thickness of the material to be formed on the substrate (S), the type of film, throughput, etc.

[0031] After the film formation in the film formation chamber (520) is completed, the carrier (C) is transported through the buffer chamber (521) to the rotation chamber (522) (first rotation chamber), where its traveling direction is rotated by 90 degrees. The carrier (C) then passes through the buffer chamber (523) and is transported through the rotation chamber (524) (second rotation chamber), where its traveling direction is again rotated by 90 degrees.

[0032] A film is formed in the film formation chamber (526) on a substrate (S) mounted on a carrier (C) that has passed through the buffer chamber (525) and been carried into the film formation chamber (526) (526a to 526d). An evaporation source (film formation means) that emits evaporation material vertically upward is disposed in the lower part of the film formation chamber (520, 526). In the film formation chamber (520, 526), ​​the substrate (S) held by the carrier (C) with the film formation surface facing vertically downward passes over the evaporation source, whereby the evaporation material is formed on the film formation surface except for the positions blocked by the mask (M).

[0033] The carrier (C) on which film formation on the substrate (S) is completed passes through the buffer chamber (530) and is transported to the carrier separation chamber (531) (first separation chamber) and the carrier separation chamber (532) (second separation chamber) to be separated from the mask (M). In the carrier separation chamber (531), the mask (M) whose life has expired is separated and is transported from the mask transport chamber (533). In the carrier separation chamber (532), the mask (M) whose life remains, i.e., the mask (M) that is still usable, is separated from the carrier (C), and the separated mask (M) is transported to the mask assembly chamber (510) through the mask transfer chamber (535) to be reused for film formation.

[0034] The carrier (C) which has been separated from the mask (M) but still holds the substrate (S) is turned upside down in the reversal chamber (540), passes through the pass chamber (541), and is transported to the substrate separation chamber (542), where it is separated from the substrate (S).

[0035] The carrier (C) separated from the substrate (S) is carried out of the film forming apparatus from the carrier carrying-out chamber (544) and reused for film formation via the carrier delivery chamber (543). The substrate (S) separated from the carrier (C) and on which film formation has been completed is carried out of the film forming apparatus from the substrate carrying-out chamber (545).

[0036] The control unit (550) controls various operations of the film forming apparatus (500). The control unit (550) transmits and receives information between the components of each chamber and the transport means that transports the transport body (substrate, carrier, stack of carrier and substrate, mask, etc.) via control lines or wireless communication (not shown). The control unit (550) can be an information processing device (e.g., a computer or processing circuit) having a processor, memory, communication means, etc. On the other hand, the control unit (550) may be a device that operates in conjunction with multiple information processing devices. For example, a control unit may be installed for each chamber.

[0037] Although the film formation apparatus (500) of this embodiment has been described as having an upward deposition configuration (a configuration in which the surface of the substrate (S) on which a film is to be formed faces downward in the vertical direction during film formation), the present invention is not limited thereto. For example, a downward deposition configuration (a configuration in which the surface of the substrate (S) on which a film is to be formed faces upward in the vertical direction during film formation) or a side deposition configuration (a configuration in which the substrate (S) is set up vertically during film formation) may also be used.

[0038] 1 illustrates an inline-type film formation apparatus (500), but the present invention is not limited to this and can be applied to any film formation apparatus that evacuates or maintains the inside of a chamber of the film formation apparatus in a vacuum state, for example, it can also be applied to a cluster-type film formation apparatus. That is, it can also be applied to a cluster-type film formation apparatus in which a film formation chamber, a mask stock chamber, etc. are arranged so as to surround a transfer chamber in which an articulated transfer robot is installed.

[0039] FIG. 2 is a diagram illustrating a vacuum pump system 200 connected to a chamber 100 of one of the lines (e.g., deposition chambers 520, 526, etc.) included in a deposition apparatus 500. In FIG. 2, the vacuum pump system 200 is connected to the bottom of the chamber 100, but the present invention is not limited to this, and the vacuum pump system 200 may be connected to the side or top of the chamber 100. For ease of explanation, other components (e.g., evaporation sources, etc.) installed in the chamber 100 are not shown in FIG. 2.

[0040] A vacuum pump system (200) according to one embodiment of the present invention includes a pump section (210), a compressor section (230), a heating section (250), a power supply section (270), and a pump system control section (290).

[0041] The pump unit 210 adiabatically expands a refrigerant (e.g., helium) compressed at high pressure to cryogenically cool the temperature of the interior space of the pump unit, thereby removing gas particles from the processing space within the chamber 100 through condensation / adsorption, thereby evacuating the processing space within the chamber 100. Specifically, the pump unit 210 may be a cryogenic refrigerator that performs a Gifford-McMahon refrigeration cycle using a refrigerant such as helium gas.

[0042] The pump section (210) includes a main valve (211) that connects or disconnects the internal space of the pump section (210) with the processing space inside the chamber (100), a housing (215) that defines the internal space of the pump section (210), cooling stage sections (217, 219) in which a high-pressure refrigerant is adiabatically expanded to cool the surroundings, cooling panel sections (221, 223) that are cooled to extremely low temperatures by the cooling stage sections (217, 219), and a motor section (225) that includes a motor (not shown) that sends the high-pressure refrigerant from the compressor section (230) to the cooling stage sections (217, 219) and returns the expanded, low-pressure refrigerant to the compressor section (230).

[0043] The main valve 211 can be attached to the bottom, side, or top of the chamber 100. By opening the main valve 211, gas from the processing space in the chamber 100 can be introduced into the interior space of the housing 215, and by closing the main valve 211, the interior space of the housing 215 can be isolated from the processing space of the chamber 100.

[0044] The housing (215) has a space inside and an opening at the top where the main valve (211) is attached.

[0045] The cooling stages 217 and 219 are typically configured as two stages where a high-pressure refrigerant adiabatically expands to cool the surroundings. That is, the high-pressure refrigerant adiabatically expands primarily in the first cooling stage 217 to cool the cooling panel 221 to a predetermined temperature (e.g., a low temperature of 80 K). The refrigerant then adiabatically expands secondary in the second cooling stage 219, which is connected in series with the first cooling stage 217, to cool the cooling panel 223 to a predetermined target temperature (e.g., a cryogenic temperature of 20 K or less). The first cooling stage 217 may have a first cold head (not shown) at its end facing the cooling panel 221, and the second cooling stage 219 may have a second cold head (not shown) at its end facing the cooling panel 223.

[0046] The cooling panels 221 and 223 are connected to the cooling stages 217 and 219 or their cold heads and are cooled thereby. They are installed within the interior space of the housing 215. Gas introduced into the interior space of the housing 215 through the main valve 211 from the processing space within the chamber 100 comes into contact with the cooling panels 221 and 223 inside the housing 215 and is condensed, or adsorbed by an adsorbent (e.g., activated carbon) provided in the cooling panels 221 and 223. Although not shown in FIG. 2 , the cooling panels 221 and 223 may have complex shapes to increase the contact area with the gas.

[0047] Specifically, the cooling panel units (221, 223) include a first cooling panel unit (221) connected to the first cooling stage (217) or its cold head and cooled to a predetermined temperature (e.g., a low temperature of 80K), and a second cooling panel unit (223) connected to the second cooling stage (219) or its cold head and cooled to a predetermined target temperature (e.g., 20K or less).

[0048] The first cooling panel 221 mainly condenses and exhausts water vapor particles, while the second cooling panel 223 condenses and exhausts nitrogen, oxygen, argon, and other gas particles of similar weight. Gases such as hydrogen, helium, and neon cannot be condensed by the second cooling panel 223, so these gas particles are adsorbed and removed by a porous adsorbent provided inside the second cooling panel 223.

[0049] In this way, the pump unit (210) can evacuate and maintain the processing space in the chamber (100) at a high vacuum by removing gas particles in the processing space in the chamber (100) by adsorbing / removing them onto the extremely low-temperature cooling panel units (221, 223).

[0050] Although not shown in FIG. 2 , the pump unit 210 may include a baffle installed between the main valve 211 and the cooling stage units 217 and 219, and may also include a shield installed between the inner surface of the housing 215 and the cooling panels 221 and 223. Because the baffle and shield are connected to the first cooling panel unit 221, they are also cooled to a predetermined temperature (e.g., a low temperature of 80 K) and condense and remove gas particles such as water vapor. Therefore, the baffle and shield can be considered to be part of the first cooling panel unit 221. In this case, the cooling panel units 221 and 223 can be protected from heat sources within the chamber 100 (e.g., evaporation sources in the deposition chambers 520 and 526) and radiant heat from the housing 215.

[0051] Although FIG. 2 illustrates one pump unit (210) connected to the chamber (100), the present invention is not limited thereto, and multiple pump units (210) may be connected to one chamber (100).

[0052] The compressor unit 230 compresses a refrigerant such as helium gas to a predetermined high pressure, supplies the compressed refrigerant to the pump unit 210, and recovers a low-pressure refrigerant from the pump unit 210, thereby circulating the refrigerant. To this end, the compressor unit 230 is fluidly connected to the pump unit 210 through a refrigerant pipe.

[0053] The compressor unit (230) can adjust the temperature of the internal space of the pump unit (210) by adjusting the supply amount of high-pressure refrigerant.

[0054] Although not shown in FIG. 2, the compressor unit 230 may include a structure for supplying cooling water to remove heat generated when the refrigerant is compressed.

[0055] 2 illustrates a configuration in which one compressor unit 230 is connected to one pump unit 210, but the present invention is not limited to this, and one compressor unit 230 may be connected to multiple pump units 210, or one pump unit 210 may be connected to multiple compressor units 230. With this configuration, even if an abnormality occurs in one pump unit 210 or compressor unit 230, the vacuum evacuation and maintenance of the chamber 100 can be performed through the other pump units 210 or compressor units 230.

[0056] The heating section (250) is a means for heating the pump section (210), particularly the cooling panel sections (221, 223) of the pump section (210), in order to vaporize and release gas molecules, etc., that have condensed / adsorbed on the cooling panel sections (221, 223) of the pump section (210) (e.g., for regeneration work).

[0057] If a certain amount of gas molecules or the like condenses or adsorbs on the cooling panel units (221, 223), other gas molecules cannot condense or adsorb any more, and the efficiency of evacuation and maintenance of the vacuum decreases. In contrast, the vacuum pump system (200) of this embodiment performs a regeneration operation in which, while the evacuation operation by the pump unit (210) and the compressor unit (230) is stopped, the cooling panel units (221, 223) are heated to a predetermined temperature (the vaporization temperature of the gas molecules, e.g., room temperature) and the vaporized gas molecules or the like are discharged outside the pump unit (210). This predetermined temperature is also referred to as the regeneration temperature.

[0058] The heating unit 250 includes a band-shaped heater installed on the outer circumferential surface of the housing 215 of the pump unit 210. That is, the band-shaped heater is installed on the outer circumferential surface of the housing 215 so as to surround at least a portion of the outer circumferential surface of the housing 215, and can supply heat to the interior space of the housing 215 through the housing 215 to raise the temperature of the interior space of the housing 215.

[0059] Although FIG. 2 illustrates a configuration in which one heating unit (250) is provided for one pump unit (210), the present invention is not limited to this, and multiple heating units (250) may be provided on the outer circumferential surface of one pump unit (210) to increase the temperature rise rate during regeneration operation.

[0060] Also, although FIG. 2 illustrates the heating unit (250) as being installed only on the outer circumferential surface of the housing (215), the heating unit (250) may be installed in the interior space of the housing (215), particularly the cooling panel units (221, 223), without any limitations on the installation position, and may be installed not only on the outer circumferential surface of the housing (215) but also inside the housing (215) to increase the speed of the regeneration operation.

[0061] The vacuum pump system 200 of this embodiment may further include a purge unit 255 for regeneration. The purge unit 255 is connected to the housing 215 of the pump unit 210 and supplies a purge gas, such as nitrogen gas (N), to the interior space of the housing 215 and recovers the purge gas. That is, the purge unit 255 supplies nitrogen gas at a predetermined regeneration temperature (e.g., room temperature) to the interior space of the housing 215 of the pump unit 210, thereby raising the pressure of the interior space of the pump unit 210, which has been at a high vacuum and cryogenic temperature, above atmospheric pressure and thereby raising the temperature of the interior space to the predetermined regeneration temperature (e.g., room temperature). Therefore, the purge unit 255 may be considered part of the heating unit 250 or the regeneration unit. When the internal space of the pump section (210) reaches atmospheric pressure, the purge gas is recovered in the purge section (255), and during this process, various gases inside the housing (215) that have evaporated from the cooling panel sections (221, 223) may also be released.

[0062] The vacuum pump system (200) of this embodiment may further include a roughing pump (257) connected to the chamber (100) and the housing (215) of the pump unit (210) to roughly evacuate the processing space within the chamber (100) and the internal space of the housing (215) of the pump unit (210).

[0063] As will be described later with reference to FIG. 3 , the power supply unit 270 supplies power to operate at least one of the pump unit 210 and the compressor unit 230 and the heating unit 250. That is, unlike the prior art, the vacuum pump system 200 of this embodiment does not provide separate power supplies to at least one of the pump unit 210 and the compressor unit 230 and the heating unit 250, but instead provides integrated power supply to at least one of the pump unit 210 and the compressor unit 230 and the heating unit 250. This reduces the space occupied by the separate power supplies, contributing to the miniaturization of the vacuum pump system 200 and preventing the basic design power of a production line consisting of a deposition apparatus 500 in which multiple vacuum pump systems 200 are installed.

[0064] For example, if the pump unit 210 / compressor unit 230 requires 50 kW of power and the heating unit 250 requires 20 kW of power, the basic design power of the production line would be increased by 70 kW (50 kW + 20 kW) per vacuum pump system in a conventional configuration where separate power supplies are provided to supply power to each of these units, because the basic design power of the production line is calculated based on the maximum power required by the entire production line.

[0065] In contrast, in this embodiment, as will be described later, the periods during which the pump unit (210) / compressor unit (230) and the heating unit (250) require power do not overlap, so they are configured to receive power from a single power supply unit (270). Therefore, in this embodiment, the basic design power is increased by 50 kW per vacuum pump system (200), i.e., by the power required by the pump unit (210) / compressor unit (230) or the heating unit (250), whichever requires the greater power (50 kW > 20 kW), thereby reducing the increase in the basic design power by 20 kW. Since several tens of vacuum pump systems (200) are installed in one film deposition apparatus (500), the increase in the basic design power per production line can be significantly reduced.

[0066] 2 illustrates a configuration in which the vacuum pump system 200 includes one power supply unit 270, but the present invention is not limited to this, and the vacuum pump system 200 may include multiple power supply units 270. When multiple power supply units 270 are included, at least one of the multiple power supply units 270 may integrally supply power to at least one of the pump unit 210 and the compression unit 230 and the heating unit 250.

[0067] The relationships between the components of the vacuum pump system 200 shown in Figure 2 represent functional relationships, and the physical configuration is not limited thereto. For example, the pump system control unit 290 and the power supply unit 270 may be physically integrated while maintaining their respective functions. Furthermore, the power supply unit 270 may be installed in a space within the compressor unit 230, and may supply power to the pump unit 210 and the heating unit 250 as well as to the various components within the compressor unit 230. This may further reduce the overall size of the vacuum pump system 200.

[0068] In this embodiment, as will be described later, the power supply unit 270 collectively supplies power to components that require power for different periods. That is, the power supply unit 270 collectively supplies power to the pump unit 210 and / or compressor unit 230, which require power during normal pumping operation of the vacuum pump system 200, and the heater unit 250, which requires power during regeneration operation performed during periods when the normal pumping operation is suspended. In this specification, the normal pumping operation of the vacuum pump system refers to the vacuum pump system 200 evacuating the chamber 100. Other components of the vacuum pump system 200 that require power, such as the purge unit 255 and the luffing pump 257, may be supplied with power from the power supply unit 270 or through a separate power supply.

[0069] The pump system control unit (290) is connected to the components of the vacuum pump system (200), such as the pump unit (210), compressor unit (230), heating unit (250), purge unit (255), power supply unit (270), and luffing pump (257), and controls their operation. The pump system control unit (290) can control normal evacuation operations by the pump unit (210) and compressor unit (230), and can control regeneration operations by the heating unit (250), purge unit (255), and luffing pump (257), etc.

[0070] During normal exhaust operation, the pump system control unit (290) can adjust the cooling temperature and cooling rate of the cooling panels (221, 223), for example, by adjusting the amount of high-pressure refrigerant supplied from the compressor unit (230) to the pump unit (210).

[0071] The control of the regeneration operation by the pump system control unit 290 will be described later with reference to FIG.

[0072] In addition, the pump system control unit (290) controls the power supply unit (270) to control the power supply to the pump unit (210) and compressor unit (230) used for normal evacuation operation of the vacuum pump system (200) and the power supply to the heating unit (250) used for regeneration operation.

[0073] 2, the pump system control unit 290 is shown to control the components of the vacuum pump system 200 in an integrated manner, but the present invention is not limited thereto, and at least some of these components may be controlled by their own dedicated controllers. Also, the pump system control unit 290 may be integrated into the control unit 550 of the deposition apparatus 500.

[0074] Hereinafter, the configuration of the power supply according to the embodiment of the present invention will be described in detail with reference to FIG.

[0075] FIG. 3 shows the connection relationship between the pump section (210) and the heating section (250) and the power supply section (270) that supplies power to them in common or in an integrated manner in a configuration in which one vacuum pump system (200) has multiple pump sections (210) / heating sections (250).

[0076] Since the heating unit (250) is a component that heats the pump unit (210) during regeneration operation, in the configuration of Figure 3, the number of heating units (250) installed corresponds to the number of pump units (210) (for example, the same number as the number of pump units (210)).

[0077] It is assumed that the pump section (210a to 210e) and the heating section (250a to 250e) are connected to one chamber, but the present invention is not limited to this, and a configuration in which they are connected to multiple different chambers is also acceptable.

[0078] In this way, by configuring a single vacuum pump system (200) so that power is supplied from a single power supply unit (270) to multiple pump units (210a to 210e) and multiple heating units (250a to 250e), the vacuum pump system (200) can be further miniaturized, and the amount of additional power required for the basic design of the production line can be further reduced.

[0079] However, the present invention is not limited to this, and may be configured such that one vacuum pump system 200 includes one pump unit 210 and one heating unit 250, with the power supply unit 270 supplying power to this set of pump unit and heating unit, or the power supply unit 270 may be configured to integrally supply power to some of the multiple pump units 210 and some of the multiple heating units 250 in one vacuum pump system 200. In this case, a separate integrated power supply unit may be additionally provided for the remaining pump units 210 and heating units 250, or separate power supplies may be provided for each of the pump units 210 and heating units 250 as in the conventional case.

[0080] Although the pump unit (210) is used as an example in this embodiment, the compressor unit (230) may be configured to receive power instead of the pump unit (210), or both the pump unit (210) and the compressor unit (230) may be configured to receive power from the power supply unit (270). That is, the vacuum pump system (200) may include a plurality of at least one of the pump unit (210) and the compressor unit (230), and may include a number of heating units (250) corresponding to the number of pump units (210), and the power supply unit (270) may be configured to supply power to at least one of the plurality of pump units (210) and the compressor unit (230) and a number of heating units (250) corresponding to the number of pump units (210). Even with such a configuration, the effects of miniaturizing the device configuration of the vacuum pump system (200) and suppressing the increase in basic design power can be similarly achieved.

[0081] The power supply unit (270) of this embodiment receives an external input power source and supplies output power to a total of five pump units (210a to 210e) and heating units (250a to 250e) in accordance with their respective power specifications. To this end, the power supply unit (270) has an input unit (301) and a power distribution unit (not shown) including a plurality of output units (303, 305) corresponding to the number of pump units (210) and heating units (250).

[0082] That is, the power supply unit (270) or the power distribution unit has at least one first output terminal (303) for supplying a first output power to at least one pump unit (210) and at least one second output terminal (305) for supplying a second output power to at least one heating unit (250) according to the respective power specifications of the pump unit (210) and the heating unit (250).

[0083] In this embodiment, the first output powers supplied to the pump units 210a to 210e have the same power specifications, and the second output powers supplied to the heating units 250a to 250e also have the same power specifications, but the present invention is not limited thereto. For example, the first output powers supplied to the pump units 210a to 210e may be different from each other, and the second output powers supplied to the heating units 250a to 250e may also be different from each other.

[0084] On the other hand, the first output power and the second output power may have the same specifications or different specifications. When the first output power and the second output power are different, that is, when the power specifications (phase, voltage, frequency, etc.) required for the pump units (210a to 210e) are different from the power specifications required for the heating units (250a to 250e), the power supply unit (270) has a power conversion unit (not shown) for converting the specifications of the external input power source into the first output power and / or the second output power (i.e., converting the phase, voltage value, and / or frequency, etc.).

[0085] For example, if the external input power source of the power supply unit 270 is a three-phase power source, the pump unit 210 uses the three-phase power source, and the heating unit 250 uses a single-phase power source, the at least one first output terminal 303 supplies the external input power source directly to the pump unit 210, and the at least one second output terminal 305 connected to the heating unit 250 can output single-phase power by selecting any two of the three input lines of the input three-phase power source. Conversely, to output three-phase power from a single-phase input power source, a phase converter such as a rotary phase converter can be used. The voltage can be converted using a transformer, and the frequency can be converted using an inverter.

[0086] Although not shown in FIG. 3 , the power supply unit 270 of this embodiment may further include a power status detector that detects the status (e.g., voltage value) of the power supplied from the plurality of output units. Depending on the result of comparing the voltage value of the output power detected by the power status detector with a reference voltage value, the pump system control unit 290 controls whether or not to cut off the power supplied to the pump unit 210, compressor unit 230, and heating unit 250. This makes it possible to prevent malfunction of the pump unit 210, compressor unit 230, and heating unit 250.

[0087] Hereinafter, the operation flow of the vacuum pump system 200 according to this embodiment will be described with reference to FIG.

[0088] When the vacuum pump system 200 starts operating, the luffing pump 257 performs a rough evacuation operation (S01) of the interior space of the pump unit 210. That is, with the main valve 211 closed, the luffing pump 257 is operated and the connection valve 261 between the pump unit 210 and the luffing pump 257 is opened to roughly evacuate the interior space of the pump unit 210 to a predetermined first vacuum level (e.g., 10 Pa).

[0089] When the internal space of the pump unit 210 is evacuated to the first vacuum level, the connection valve 261 is closed, and power supply from the power supply unit 270 to the pump unit 210 and / or the compressor unit 230 is started to operate the pump unit 210 and the compressor unit 230, thereby cooling the internal space of the pump unit 210 and the cooling panel units 221, 223 to a predetermined temperature (e.g., 80 K for the first cooling panel unit 221, and 20 K or less for the second cooling unit 223) (S03). In this step, the main valve 211 is also kept closed.

[0090] Next, a normal evacuation operation for evacuating the chamber 100 will be described. That is, with the main valve 211 closed, the connection valve 263 between the chamber 100 and the luffing pump 257 is opened, and the processing space inside the chamber 100 is roughly evacuated to a first vacuum level (e.g., 10 Pa) by the luffing pump 257 (S05).

[0091] After the processing space inside the chamber (100) is roughly evacuated to the first vacuum level, the connection valve (263) is closed, and the main valve (211) between the chamber (100) and the pump unit (210) is opened, so that the processing space inside the chamber (100) is evacuated to a second vacuum level (e.g., 10 －６ Cryogenic evacuation is performed by the pump unit 210 until the pressure reaches a temperature below 100 Pa (S07).

[0092] After the processing space inside the chamber (100) reaches the second vacuum level, which is the target vacuum level, the processing step to be performed in the chamber 100 (e.g., a deposition step in the case of the film formation chambers 520 and 526) is performed. While the processing step in the chamber 100 is being performed, the pump unit (210) and the compressor unit (230) continue normal evacuation operation to maintain the interior of the chamber (100) at the second vacuum level, which is the target vacuum level.

[0093] As described above, as the normal pumping operation of the vacuum pump system 200 continues, the amount of gas molecules condensing / adsorbing on the cooling panel units 221, 223 of the pump unit 210 increases, and, for example, the temperature of the second cooling panel unit 223 cannot be maintained at a predetermined temperature (e.g., 20 K or less) required to maintain the second vacuum level. When this condition occurs (S08), the vacuum pump system 200 stops the normal pumping operation and performs a regeneration operation. In this embodiment, the start condition of the regeneration operation is determined based on the temperature of the second cooling panel unit 223. However, the present invention is not limited thereto, and the start condition may be determined based on other conditions (e.g., the vacuum level of the processing space in the chamber 100, the amount of gas pumped from the chamber 100, etc.).

[0094] That is, if the regeneration start requirements are met (S08), the main valve (211) of the pump section (210) is closed, and the power supply to the pump section (210) and the compressor section (230) is stopped, thereby stopping the normal exhaust operation (S09).

[0095] Thereafter, the power supply unit 270 starts supplying power to the heating unit 250 to operate the heating unit 250 (S11), and the purge unit 255 supplies a purge gas such as N2 into the internal space of the pump unit 210 until the internal space of the pump unit 210 reaches atmospheric pressure (S13). When the pressure in the internal space of the pump unit 210 rises to a predetermined pressure (e.g., atmospheric pressure or higher) due to the supply of the purge gas, the purge gas in the internal space of the pump unit 210 is recovered by the purge unit 255 to maintain the internal space of the pump unit 210 at the predetermined pressure.

[0096] After the temperature of the internal space of the pump section (210) reaches a predetermined regeneration temperature (e.g., room temperature) through heating by the heating section (250) and N2 gas purging, the supply of purge gas such as N2 is stopped, the connection valve (261) is opened, and the internal space of the pump section (210) is roughly evacuated by the luffing pump (257) (S15), thereby evacuating the purge gas and other gases filling the internal space of the pump section (210).

[0097] When the degree of vacuum in the internal space of the pump unit 210 reaches the first vacuum degree, the connection valve 261 is closed, the operation of the luffing pump 257 is stopped, and the power supply to the heating unit 250 is stopped (S17).

[0098] As a result, the substances that had condensed / adsorbed on the cooling panel sections (221, 223) of the pump section (210) are vaporized and removed to the outside of the pump section (210), and the cooling panel sections (221, 223) return to their initial state where they can again condense / adsorb gas molecules, completing the regeneration operation.

[0099] Thereafter, the process returns to step S03, and power is supplied to the pump section (210) and the compressor section (230) to continue cooling the cooling panel sections (221, 223), particularly the second stage (223), until the temperature of the cooling panel sections (221, 223) is cooled to 20 K or less.

[0100] The operation of the vacuum pump system 200 according to this embodiment can be performed by the pump system control unit 290 controlling the pump unit 210, compressor unit 230, heating unit 250, purge unit 255, luffing pump 257, power supply unit 270, etc.

[0101] Although not specifically described here, the vacuum pump system (200) is equipped with various temperature / pressure sensor units for controlling the normal evacuation operation and regeneration operation by the pump system control unit (290).

[0102] As described above, the power supply unit 270 starts supplying power to the pump unit 210 and the compressor unit 230 in step S03 when the cooling of the cooling panel units 221, 223 is started, and the power supply continues while the normal exhaust operation continues. On the other hand, the power supply unit 270 stops supplying power to the heating unit 250 during the normal exhaust operation (first power supply step).

[0103] If the conditions for starting the regeneration operation are met, power supply to the pump unit 210 and the compressor unit 230 is stopped in step S09, and power supply to the heating unit 250 is started in step S11 to perform the regeneration operation. While the regeneration operation (second power supply step) continues, power supply to the pump unit 210 and the compressor unit 230 is stopped, and power supply to the heating unit 250 continues. When the regeneration operation is completed, power supply to the heating unit 250 is stopped in step S17, and the process returns to step S03, where power supply to the pump unit 210 and the compressor unit 230 is started again.

[0104] As described above, the power supply unit 270 of this embodiment is configured to integrally supply power to the components of the vacuum pump system 200 whose operating periods do not overlap. That is, the power supply unit 270 is configured to supply power to the pump unit 210 / compressor unit 230 and heating unit 250 whose power supply periods do not overlap, thereby enabling stable power supply without the problem of power supply failure caused by simultaneously supplying power to multiple loads (such as unstable power supply due to a drop in the voltage of power supplied to other loads when power is supplied to one load).

[0105] Although not shown in FIG. 4 , if the vacuum pump system 200 needs to be shut down for maintenance of the chamber 100 in which the vacuum pump system 200 is installed, steps S09 to S13 of FIG. 4 are performed, followed by turning off the heating unit 250 to shut down the operation. That is, with the main valve 211 closed, the pump unit 210 / compressor unit 230 are turned off, and the heating unit 250 and purge unit 255 heat and pressurize the interior of the pump unit 210 to atmospheric pressure and room temperature, respectively, and then power supply to the heating unit 250 is interrupted. In this state, maintenance of the chamber 100 is performed. This prevents workers who enter the chamber 100 during maintenance from being exposed to the extremely low temperature of the interior of the pump unit 210 and reduces power consumption due to operation of the pump unit 210 during maintenance.

[0106] Next, an example of a method for manufacturing an electronic device using the film forming apparatus (500) according to this embodiment will be described. Below, the structure of an organic EL element will be shown as an example of an electronic device, and a method for manufacturing an organic EL display device will be previewed (exemplified).

[0107] First, the organic EL display device to be manufactured will be described. Figure 5(a) is an overall view of the organic EL display device (700), and Figure 5(b) shows the cross-sectional structure of one pixel of the organic EL element.

[0108] As shown in FIG. 5A, a display area 701 of an organic EL display device 700 includes a matrix of pixels 702, each of which includes a plurality of organic EL elements for different light emission colors. As will be described in detail later, each organic EL element has a structure including an organic layer sandwiched between a pair of electrodes. Meanwhile, the pixel described here refers to the smallest unit capable of displaying a desired color in the display area 701. In the organic EL display device according to this embodiment, each pixel 702 is formed by a combination of a first light-emitting element 702R, a second light-emitting element 702G, and a third light-emitting element 702B, each of which emits different light. While the pixel 702 is often formed by a combination of red, green, and blue light-emitting elements, it may also be formed by a combination of yellow, cyan, and white light-emitting elements, and is not particularly limited as long as it includes at least one color.

[0109] Figure 5(b) is a partial cross-sectional schematic diagram taken along line B-B in Figure 5(a). A pixel (702) is made up of a plurality of light-emitting elements, each of which has a first electrode (anode) (704), a hole transport layer (705), one of the light-emitting layers (706R, 706G, 706B), an electron transport layer (707), and a second electrode (cathode) (708) on a substrate (703). Of these, the hole transport layer (705), the light-emitting layers (706R, 706G, 706B), and the electron transport layer (707) correspond to organic layers. In this embodiment, the light-emitting layer (706R) is an organic EL layer that emits red light, the light-emitting layer (706G) is an organic EL layer that emits green light, and the light-emitting layer (706B) is an organic EL layer that emits blue light. The light-emitting layers (706R, 706G, 706B) are formed in patterns corresponding to light-emitting elements (organic EL elements) that emit red, green, and blue light, respectively.

[0110] Furthermore, the first electrode (704) is formed separately for each light-emitting element. The hole transport layer (705), electron transport layer (707), and second electrode (708) may be formed in common for multiple light-emitting elements (702R, 702G, 702B), or may be formed for each light-emitting element. Meanwhile, an insulating layer (709) is provided between the first electrodes (704) to prevent short-circuiting between the first electrodes (704) and the second electrodes (708) due to foreign matter. Furthermore, since the organic EL layer is easily deteriorated by moisture and oxygen, a protective layer (710) is provided to protect the organic EL elements from moisture and oxygen.

[0111] In Figure 5(b), the hole transport layer (705) and the electron transport layer (707) are illustrated as single layers, but depending on the structure of the organic EL element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. Furthermore, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode (704) to the hole transport layer (705) can also be formed between the first electrode (704) and the hole transport layer (705). Similarly, an electron injection layer can also be formed between the second electrode (708) and the electron transport layer (707).

[0112] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0113] First, a circuit (not shown) for driving the organic EL display device and a substrate (703) on which a first electrode (704) is formed are prepared.

[0114] An acrylic resin is formed by spin coating on the substrate (703) on which the first electrode (704) is formed, and the acrylic resin is patterned by lithography so as to form an opening in the portion where the first electrode (704) is formed, thereby forming an insulating layer (709). This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0115] The substrate (703) on which the insulating layer (709) is patterned is carried as the substrate (S) into the film-forming apparatus (500) serving as the first organic material film-forming apparatus, and a hole transport layer (705) is formed on the substrate (703) by vacuum deposition in film-forming chambers (520a-520d and 526a-526d) maintained at a vacuum by the vacuum pump system (200) of the present invention. The hole transport layer (705) is formed as a common layer on the first electrode (704) in the display area, so a high-resolution mask is not required.

[0116] Next, the substrate (703) on which the hole transport layer (705) has been formed is carried into a second organic material film-forming apparatus, and in a film-forming chamber maintained at a vacuum, a red-emitting light-emitting layer (706R) is formed on the portion of the substrate (703) where the red-emitting element is to be disposed. When forming the light-emitting layer (706a), a high-precision mask (a metal mask with openings) is used, and the mask and the substrate are aligned with high precision before the light-emitting layer (706R) material is formed.

[0117] Similar to the formation of the light-emitting layer (706R), a green-emitting light-emitting layer (706G) is formed by a third organic material film formation apparatus, followed by a blue-emitting light-emitting layer (706B) by a fourth organic material film formation apparatus. After the formation of the light-emitting layers (706R, 706G, 706B) is completed, an electron transport layer (707) is formed over the entire display area (701) by a fifth organic material film formation apparatus. The electron transport layer (707) is formed as a common layer, similar to the hole transport layer (705), and therefore does not require a high-resolution mask.

[0118] The substrate on which the electron transport layer (707) has been formed is transferred to a metal evaporation material deposition device, where a second electrode (708) is deposited.

[0119] Thereafter, the substrate 703 is transferred to a plasma CVD device where a protective layer 710 is formed, thereby completing the film formation process on the substrate 703. After that, the organic EL display device 700 is completed through cutting.

[0120] If the substrate (703) with the patterned insulating layer (709) is exposed to an atmosphere containing moisture or oxygen from the time it is carried into the film-forming apparatus until the time the formation of the protective layer (710) is completed, the light-emitting layer made of organic EL material may be deteriorated by the moisture or oxygen. Therefore, in this embodiment, the substrate is carried into and out of the film-forming apparatus in a vacuum atmosphere or an inert gas atmosphere.

[0121] 100: Chamber 200: Vacuum pump system 210: Pump section 230: Compressor section 250: Heating section 270: Power supply section 290: Pump system control section

Claims

1. A vacuum pump system for evacuating a processing space, comprising: a pump section connected to the processing space and configured to evacuate the processing space; a compressor section connected to the pump section for supplying and recovering a refrigerant; a heating section configured to heat the pump section; and a power supply section configured to supply power to at least one of the pump section and the compressor section, and to the heating section.

2. A vacuum pump system as described in claim 1, further comprising a pump system control unit, said pump system control unit controlling said power supply unit so that a period during which power is supplied to at least one of said pump unit and said compressor unit does not overlap with a period during which power is supplied to said heating unit.

3. The vacuum pump system according to claim 1, wherein the heating section includes a heater covering at least a portion of an outer circumferential surface of the pump section.

4. The vacuum pump system according to claim 1, wherein the power supply unit includes a distribution board having a plurality of output units.

5. The vacuum pump system according to claim 4, wherein the distribution board is configured to supply a first output power to at least one of the pump section and the compressor section through a first output section among the plurality of output sections, and to supply a second output power to the heating section through a second output section different from the first output section.

6. The vacuum pump system according to claim 5, wherein the first output power and the second output power differ from each other in at least one of phase, voltage, current, and frequency.

7. The vacuum pump system according to claim 6, wherein the power supply section further includes a converter for converting input power to the first output power and / or the second output power.

8. The vacuum pump system according to claim 1, wherein the vacuum pump system includes a plurality of at least one of the pump sections and the compressor sections, and includes a number of the heating sections corresponding to the number of the pump sections, and the power supply section is configured to supply power to the plurality of at least one of the pump sections and the compressor sections, and to a number of the heating sections corresponding to the number of the pump sections.

9. The vacuum pump system according to claim 8, wherein the vacuum pump system includes a plurality of pump sections and a number of heating sections corresponding to the number of pump sections, and the power supply section is configured to supply power to the plurality of pump sections and a number of heating sections corresponding to the number of pump sections.

10. A processing apparatus for performing a predetermined process on an object to be processed, comprising: a chamber having a processing space therein; and a vacuum pump system according to any one of claims 1 to 9, connected to the chamber and evacuating the processing space.

11. A film formation apparatus for forming a film on a substrate through a mask, comprising: a chamber having a processing space therein; and a vacuum pump system according to any one of claims 1 to 9, connected to the chamber.

12. A power supply control method for a vacuum pump system, comprising: a first power supply step of supplying power to at least one of a pump section of the vacuum pump system and a compressor section connected to the pump section for supplying and recovering refrigerant to the pump section; and a second power supply step of supplying power to a heating section configured to heat the pump section, wherein the first power supply step and the second power supply step are performed by one power supply section of the vacuum pump system.

13. The power supply control method according to claim 12, wherein a period during which the first power supply step is performed and a period during which the second power supply step is performed are controlled so as not to overlap each other.

14. A film formation method for forming a film on a substrate through a mask, comprising: a step of evacuating a processing space of a chamber of a film formation apparatus by a vacuum pump system described in any one of claims 1 to 9; and a step of forming a film on the substrate through a mask by a film formation source in at least one chamber of a plurality of chambers including the chamber.

15. A method for manufacturing an electronic device by the film forming method according to claim 14.

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