Cooling device, substrate processing device, and method for manufacturing article

Abstract

This cooling device for cooling an object includes: a pump for circulating a first refrigerant; a vaporizer for cooling the object by vaporizing the first refrigerant; a condenser for condensing the first refrigerant vaporized by the vaporizer; and a pressure control unit for controlling the pressure of a first part where the first refrigerant exists in a gas state in the condenser.

Description

Cooling device, substrate processing device, and method for manufacturing an article

[0001] The present invention relates to a cooling device, a substrate processing apparatus, and a method for manufacturing an article.

[0002] Substrate processing apparatuses such as pattern forming apparatuses (e.g., exposure apparatuses, imprint apparatuses, and electron beam lithography apparatuses), or plasma processing apparatuses (e.g., CVD apparatuses, etching apparatuses, and sputtering apparatuses) have heat-generating parts (e.g., drive mechanisms, components heated by plasma, etc.) that are equipped with cooling devices to cool the heat-generating parts. The cooling devices remove heat from the heat-generating parts and dissipate the heat outside the apparatus, thereby cooling the heat-generating parts.

[0003] Patent No. 5,313,384 describes a cooling system including an evaporator, a condenser, a pump, an accumulator, a heat exchanger, and a temperature sensor that extracts heat from a component. A circuit is formed in which fluid from the pump passes through the evaporator and condenser and returns to the pump, and the accumulator is in fluid communication with the circuit. The heat exchanger transfers heat to and from the fluid in the accumulator. The amount of heat transfer is controlled based on the output of the temperature sensor.

[0004] In the cooling system described in Patent No. 5,313,384, cavitation must be avoided at the pump suction to ensure stable circulation of fluid in the circuit where the fluid exits the pump and returns to the pump via the evaporator and condenser. To achieve this, a cooling system must be added to the condenser, or downstream or upstream thereof, to lower the fluid temperature or increase the pressure at the pump suction. Because the fluid is pressurized at the pump outlet, it is sent to the heat-generating element in a state where it is less likely to vaporize. In the heat-generating element, evaporative cooling does not occur until the fluid temperature rises to its boiling point under the fluid pressure of the heat-generating element. This allows temperature fluctuations in the heat-generating element, potentially causing deformation of components surrounding the heat-generating element due to thermal expansion. To suppress temperature fluctuations, a two-phase accumulator is used to control the heat quantity supplied to the accumulator, thereby changing the gas-liquid balance of the fluid and adjusting the pressure of the entire system to maintain a predetermined temperature downstream of the heat-generating element.

[0005] In the configuration described in Patent No. 5313384, when the heat-generating part generates heat, heat is collected from the accumulator and condensed to reduce the pressure in the circulation system, but the pressure at the suction part of the pump also decreases, which creates the risk of cavitation. Conversely, when the heat-generating part does not generate heat, heat is supplied to the accumulator to vaporize it and increase the pressure in the circulation system.

[0006] In addition, by sealing a gas that has a lower boiling point than the circulating fluid and is less likely to undergo chemical reactions in the gas phase of the condenser, the pressure at the suction part of the pump can be made higher than the saturated water vapor pressure of the fluid relative to the pressure in the evaporator, thereby suppressing the occurrence of cavitation.

[0007] However, if the enclosed gas dissolves in the fluid or if the gas leaks out of the circulation system, the partial pressure of the enclosed gas changes, which can cause cavitation.

[0008] Patent No. 5313384

[0009] An object of the present invention is to provide a cooling apparatus, a substrate processing apparatus, and a method for manufacturing an article that can suppress the occurrence of cavitation.

[0010] The cooling device of the present invention is a cooling device that cools an object, and includes a pump that circulates a first refrigerant, an evaporator that cools the object by vaporizing the first refrigerant, a condenser that condenses the first refrigerant vaporized by the evaporator, and a pressure control unit that controls the pressure of a first portion of the condenser where the first refrigerant exists in a gaseous state.

[0011] According to the present invention, it is possible to provide a cooling device, a substrate processing apparatus, and a method for manufacturing an article that can suppress the occurrence of cavitation.

[0012] FIG. 7 is a diagram showing the configuration of a cooling apparatus according to a first embodiment. FIG. 8 is a diagram showing the configuration of a cooling apparatus according to a second embodiment. FIG. 9 is a diagram showing an example of the configuration of a substrate processing apparatus. FIG. 10 is a diagram showing an example of the configuration of a substrate processing apparatus. FIG. 11 is a flowchart for explaining the manufacture of a device. FIG. 12 is a detailed flowchart of the wafer process in step 4 of the flowchart shown in FIG. 6.

[0013] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted. Furthermore, in the accompanying drawings, the drawings may be drawn at a scale different from the actual scale in order to facilitate understanding of the present embodiments.

[0014] First Embodiment First, a cooling apparatus according to the first embodiment will be described. FIG. 1 is a diagram illustrating the cooling apparatus according to the first embodiment. The object cooled by the cooling apparatus CA is not limited to a specific object, but may be, for example, a substrate processing apparatus, particularly a heat-generating portion of the substrate processing apparatus. The substrate processing apparatus may be, for example, a pattern formation apparatus such as an exposure apparatus, an imprint apparatus, or a charged particle beam lithography apparatus, or a plasma processing apparatus such as a CVD apparatus, an etching apparatus, or a sputtering apparatus. The pattern formation apparatus has a drive mechanism that moves an object such as a substrate or an original at high speed, and the drive mechanism generates heat as the object is driven, thereby becoming a heat-generating portion. In the plasma processing apparatus, components such as electrodes are heated by plasma, and the components become heat-generating portions.

[0015] The cooling device CA may include a first circulation system 1 that circulates a first refrigerant 10 from a condenser 2 through an evaporator 7 and back to the condenser 2, and a cooling unit CD including a heat exchanger 8 disposed in the condenser 2. The first circulation system 1 may include a pump 3 that circulates the first refrigerant 10, a temperature regulator 4 that adjusts the temperature of the first refrigerant 10 by heating or cooling the first refrigerant 10, or a throttle valve 6 that adjusts the pressure of the first refrigerant 10. The condenser 2 has a second portion 201 in which the first refrigerant 10 exists in a liquid state and a first portion 202 in which the first refrigerant 10 exists in a gas state, and at least a portion of the heat exchanger 8 (preferably the entire heat exchanger 8) may be disposed in the first portion 202. An object 80, such as a heat-generating part, may be cooled by the evaporator 7.

[0016] The first circulation system 1 may be configured to cool the object 80 by utilizing a phase change of the first refrigerant 10. The first circulation system 1 may include, in addition to the pump 3, the temperature regulator 4, the throttle valve 6, and the evaporator 7, a sensor 5 for measuring the temperature of the first refrigerant 10. In FIG. 1 , the sensor 5 is disposed between the temperature regulator 4 and the throttle valve 6, but it may also be disposed between the throttle valve 6 and the evaporator 7. The first circulation system 1 may be a closed circulation system. The first refrigerant 10 in the liquid phase (liquid state) stored in the second portion 201 of the condenser 2 may be sent to the temperature regulator 4 by the pump 3. The temperature regulator 4 may adjust the temperature of the first refrigerant 10 so that the temperature of the first refrigerant 10 detected by the sensor 5 disposed downstream thereof becomes a target temperature. The temperature regulator 4 may include, for example, an electric heater or a heat exchanger, but is not limited thereto.

[0017] The first refrigerant 10 adjusted to a predetermined temperature can be decompressed by the throttle valve 6 to a pressure close to the saturated vapor pressure of the first refrigerant 10 at the predetermined temperature and sent to the evaporator 7. The evaporator 7 is in thermal contact with the object 80 or has the object 80 built in, and when the object 80 generates heat, the object 80 can be cooled by the latent heat of vaporization generated by boiling the first refrigerant 10 inside the evaporator 7. The first refrigerant 10 that has passed through the evaporator 7 can be returned to the condenser 2 in a liquid phase state or a gas-liquid mixed phase state (a state including both liquid and gas) depending on the heat generation state of the object 80.

[0018] The heat exchanger 8, at least a portion of which is disposed in the first portion 202 inside the condenser 2, cools the first refrigerant 10, thereby condensing the first refrigerant 10 from a gas phase into a liquid phase. The cooling section CD including the heat exchanger 8 may be configured, for example, with a second circulation system 11 that circulates the second refrigerant 18 through the heat exchanger 8. The second circulation system 11 circulates the second refrigerant 18 independently of the circulation of the first refrigerant 10 in the first circulation system 1. The cooling device CA may include a sensor 9 that detects the pressure or temperature inside the condenser 2 (first portion 202). A predetermined amount of gas 50 (first gas) may be sealed inside the condenser 2. The gas 50 may have a lower boiling point than the first refrigerant 10 and may be a gas that does not undergo a chemical reaction with the first refrigerant 10. The gas 50 may be, for example, air or CDA (Clean Dry Air), or may be an inert gas such as nitrogen (N2).

[0019] The second circulation system 11 can be controlled based on the output of the sensor 9 so that the pressure or temperature inside the condenser 2 (first portion 202) becomes a predetermined pressure or temperature. Here, if the pressure of the first refrigerant 10 in the evaporator 7 is controlled to become the saturated vapor pressure at a predetermined temperature, the boiling point of the first refrigerant 10 can be controlled. In the case of heat transfer fluid cooling, the temperature of the refrigerant rises by the value obtained by dividing the amount of recovered heat by the heat capacity of the fluid, depending on the amount of recovered heat. However, in the case of boiling cooling, heat is recovered using latent heat of vaporization, so heat can be recovered at a constant temperature of the boiling point.

[0020] If the first circulation system 1 is a closed system, when the first refrigerant 10 boils (evaporates), the pressure inside the evaporator 7 and the condenser 2 rises. This means that the saturated vapor pressure of the first refrigerant 10 rises, resulting in a change in the boiling point by dT as shown in the Clausius-Clapeyron equation below: dT = TΔV dP / L Here, dT is the temperature change, T is the state temperature, ΔV is the volume change due to evaporation, dP is the pressure change, and L is the latent heat.

[0021] Gas 50 is sealed into condenser 2 in order to maintain first refrigerant 10 inside evaporator 7 at a predetermined temperature and a predetermined saturated vapor pressure. The amount of gas 50 sealed into condenser 2 is an amount that makes the differential pressure between the saturated vapor pressure of first refrigerant 10 in evaporator 7 and the saturated vapor pressure of first refrigerant 10 in condenser 2 equal to the partial pressure of gas 50. When there is a difference in elevation between evaporator 7 and condenser 2, the pressure is reduced by a height head ρgh (pressure increases when h is negative), where ρ is the density of first refrigerant 10, g is the acceleration of gravity, and h is the height of evaporator 7 relative to condenser 2.

[0022] Control in the second circulation system 11 will now be described. The second refrigerant 18 used in the second circulation system 11 may be a fluid such as water. The second circulation system 11 may include a second pump 12, a second temperature regulator 13, a second temperature sensor 14, a flow rate control valve 15, a heat exchanger 8, a heat rejector 16, and a tank 17. The second refrigerant 18 in the tank 17 may be sent to the second temperature regulator 13 by the second pump 12. The second temperature regulator 13 may adjust the temperature of the first refrigerant 10 by heating or cooling the second refrigerant 18 so that the temperature of the second refrigerant 18 detected by the second temperature sensor 14 located downstream of the second temperature regulator 13 becomes a predetermined temperature. The second refrigerant 18 heated or temperature-controlled to the predetermined temperature is adjusted to a predetermined flow rate by the flow rate control valve 15 and sent to the heat exchanger 8, where it exchanges heat with the first refrigerant 10. The first refrigerant 10 is cooled and condensed by the heat exchange with the second refrigerant 18. The heat of the second refrigerant 18 heated by the latent heat of condensation of the first refrigerant 10 can be discharged to the outside of the system by the heat rejector 16 and returned to the tank 17 .

[0023] The cooling device CA may include a control unit 90. The control unit 90 may generate control signals C1, C2, and C3 to maintain a constant pressure or temperature inside the condenser 2 (first portion 202) of the first circulation system 1, and may control the second refrigerant 18 using the control signals C1, C2, and C3. The control of the second refrigerant 18 by the control unit 90 may include control of at least one of the temperature, flow rate, and pressure of the second refrigerant 18 supplied to the heat exchanger 8. The control of the second refrigerant 18 by the control unit 90 may also be understood as control of the amount of condensation of the first refrigerant 10 in the heat exchanger 8. The control of the second refrigerant 18 by the control unit 90 may include, for example, providing a control signal C1 corresponding to the output of the sensor 9 to the second temperature regulator 13 and controlling the amount by which the second temperature regulator 13 adjusts the temperature of the second refrigerant 18. The control of the second refrigerant 18 by the control unit 90 may include providing a control signal C2 corresponding to the output of the sensor 9 to the second pump 12, and controlling the output of the second pump 12 to control the flow rate and / or pressure of the second refrigerant 18. The control of the second refrigerant 18 by the control unit 90 may include providing a control signal C3 corresponding to the output of the sensor 9 to the flow rate adjustment valve 15, and controlling the opening degree of the flow rate adjustment valve 15 to control the flow rate and / or pressure of the second refrigerant 18. In other words, the control unit 90 may control at least one of the second pump 12 and the flow rate adjustment valve 15 based on the output of the sensor 9.

[0024] In the first embodiment, the cooling of the first refrigerant 10 by the second circulation system 11 is controlled so that the pressure or temperature inside the condenser 2 is maintained at a predetermined value while tracking the heat generation state of the object 80. This fixes the boiling point of the first refrigerant 10 in the evaporator 7, allowing heat to be recovered from the object 80 at a constant temperature. Furthermore, in the first embodiment, the pressure or temperature of the condenser 2 is controlled to the control target value of the cooling unit CD while tracking or predicting the heat generation state of the object 80, thereby controlling the pressure, i.e., the boiling point, of the evaporator 7, reducing control delays in the cooling device CA and improving temperature stability. Furthermore, in the first embodiment, when the heat generation state of the object 80 becomes high, the boiling point of the first refrigerant 10 in the evaporator 7 is lowered below the target temperature of the object 80, thereby achieving efficient heat recovery.

[0025] Here, the cooling section CD is illustrated as being configured to circulate a temperature- and / or flow-controlled refrigerant (second refrigerant 18), but this is only one example and can be modified as appropriate, for example, it may be a refrigerator that transfers heat using the principle of a heat pump.

[0026] A predetermined amount of gas 50 is sealed inside condenser 2 (first portion 202), and the total pressure of first portion 202 is the sum of the partial pressure of gas 50 and the partial pressure of first refrigerant 10. Meanwhile, inside evaporator 7, a gas-liquid mixture filled with first refrigerant 10 is in a boiling state, so no partial pressure other than that of first refrigerant 10 is generated, and the total pressure inside evaporator 7 is the saturated vapor pressure of first refrigerant 10. By lowering the partial pressure of first refrigerant 10 in first portion 202 below the partial pressure (=total pressure) of first refrigerant 10 in evaporator 7, the dew point temperature of first refrigerant 10 in condenser 2 is lower than the boiling point temperature of first refrigerant 10 in evaporator 7 by the partial pressure of gas 50.

[0027] Although the first circulation system 1 is a sealed circulation system, in reality, the partial pressure of the first refrigerant 10 in the condenser 2 can change over time due to leaks from joints, the intrusion of outside air, dissolution of gas 50 into the second part 201, etc. As a result, the difference between the boiling point of the first refrigerant 10 in the evaporator 7 and the dew point in the condenser 2 also changes.

[0028] Meanwhile, the pressure or temperature inside the condenser 2 (first portion 202) is controlled to be constant by the cooling unit CD. If the total pressure in the first portion 202 is constant, a change in the partial pressure of the gas 50 can be detected by the dew point meter 31 as a change in the dew point of the first refrigerant 10. For example, if the partial pressure of the first refrigerant increases due to a leak, the dew point of the first refrigerant 10 also increases. If the partial pressure of the first refrigerant changes in this way, the temperature control of the cooling device CA may become unstable or uncontrollable.

[0029] The partial pressure control means 30 may include a supply valve 32 (supply unit) that supplies gas 50 (first gas) and an exhaust valve 33 (exhaust unit) that exhausts gas 51 (second gas) from the first portion 202. The supply pressure of gas 50 may be higher than the pressure of the first portion 202. The pressure of the first portion 202 of the condenser 2 is higher than the pressure at the exhaust destination. The supply valve 32 and the exhaust valve 33 may further include an orifice or a needle valve (not shown) to adjust the intake and exhaust volume when the valve is opened. The supply valve 32 and the exhaust valve 33 may also use a mass flow controller or a flow rate adjustment valve to more accurately control the intake and exhaust volume.

[0030] The partial pressure control device PC may include a partial pressure control means 30, a dew point meter 31 (detection unit) disposed inside the condenser 2 (first portion 202), and a second control unit 91. The dew point meter 31 detects the dew point of the first refrigerant 10 in the first portion 202 containing the vaporized first refrigerant 10. The second control unit 91 generates a control signal C4 for controlling the supply valve 32 and a control signal C5 for controlling the exhaust valve 33 so that the dew point of the first refrigerant 10 in the first portion 202 falls within a predetermined range. Under the pressure or temperature environment of the first portion 202 controlled by the cooling device CA, the supply valve 32 and the exhaust valve 33 can control the partial pressure of the first refrigerant 10 using the control signals C4 and C5. In other words, the partial pressure control means 30 controls the pressure of the first portion 202 so that the dew point of the first refrigerant 10 detected by the dew point meter 31 falls within a predetermined range.

[0031] As described above, in the cooling device according to the first embodiment, the partial pressure of the first refrigerant in the first portion 202 can be maintained constant, thereby suppressing the occurrence of cavitation in the pump 3 that circulates the first refrigerant.

[0032] Second Embodiment Next, a cooling device according to a second embodiment will be described. Matters not mentioned in the second embodiment may follow those of the first embodiment. FIG. 2 is a diagram illustrating a cooling device according to this embodiment. The partial pressure control device PC in FIG. 2 differs from the partial pressure control means 30 in the first embodiment in the configuration thereof. In the first embodiment, the assumption was made that the pressure in the first portion 202 of the condenser 2 is higher than the atmospheric pressure at the exhaust destination. However, if the pressure in the first portion 202 of the condenser 2 is lower than the atmospheric pressure at the exhaust destination, the gas in the first portion 202 cannot be exhausted even by controlling the exhaust valve 33. Therefore, the partial pressure control means 30 in FIG. 2 may further include an exhaust pump 34 on the exhaust side of the exhaust valve 33. The exhaust pump 34 lowers the exhaust-side pressure of the exhaust valve 33 below the pressure in the first portion 202, thereby enabling the exhaust valve 33 to control exhaust even when the pressure in the first portion 202 is higher than the atmospheric pressure at the exhaust destination. Alternatively, the exhaust valve 33 may be replaced by only the exhaust pump 34. In this case, the operation of the exhaust pump 34 is controlled by a control signal C5 from the second control unit 91. In order to adjust the intake and exhaust volume when the exhaust pump is operated, an orifice and a needle valve (not shown) may be further provided.

[0033] The gas exhausted from the inside of the condenser 2 (first portion 202) contains the first refrigerant 10 gas in proportion to its saturated vapor pressure, and is exhausted in accordance with partial pressure control by the partial pressure control device PC, thereby reducing the first refrigerant 10 in the first circulation system 1. Therefore, a recovery unit 35 may be provided on the exhaust side from the partial pressure control means 30. The recovery unit 35 may be, for example, a heat exchanger with a refrigerant having a dew point below that of the first refrigerant 10 at atmospheric pressure, or a condenser using a Peltier element. The first refrigerant 10 condensed and recovered in the recovery unit 35 may be returned to the condenser 2 via a liquid delivery means 36 (not shown), such as a pump.

[0034] As described above, in the cooling device according to the second embodiment, the partial pressure of the first refrigerant in first portion 202 can be maintained constant, thereby suppressing the occurrence of cavitation in pump 3, which circulates the first refrigerant. Furthermore, recovery section 35 circulates first refrigerant 10 discharged to outside first circulation system 1, making it possible to maintain the flow rate of first refrigerant 10 within first circulation system 1 and improving the stability of temperature control.

[0035] A substrate processing apparatus to which the cooling apparatus CA described above is applied will now be described with reference to FIGS. 3, 4, and 5. FIG. 3 schematically illustrates the configuration of an exposure apparatus 100 as an example of a substrate processing apparatus, more specifically, a pattern forming apparatus. The exposure apparatus 100 may be configured to transfer a pattern of an original 101 onto a photosensitive layer of a substrate 102 having the photosensitive layer by a projection optical system 140. The exposure apparatus 100 may include an illumination optical system 150 that illuminates the original 101, the projection optical system 140, and a substrate positioning mechanism SPM. The exposure apparatus 100 may also include an original positioning mechanism (not shown) that positions the original 101. The substrate positioning mechanism SPM may include a substrate stage 110 having a substrate chuck that holds the substrate 102, a drive mechanism 120 that drives the substrate stage 110, and a base member 130 that supports the drive mechanism 120. The drive mechanism 120 may have an actuator including a mover 1202 that moves together with the substrate stage 110, and a stator 124 fixed to the base member 130. The stator 124 may include a coil array as the object 80. The cooling device CA may be configured to cool the coil array as the object 80.

[0036] 4 schematically shows the configuration of an imprint apparatus 200 as an example of a substrate processing apparatus, more specifically, a pattern forming apparatus. The imprint apparatus 200 can be configured to transfer a pattern of an original 101 to an imprint material on a substrate 102. The imprint apparatus 200 can include an original driving mechanism 160 that drives the original 101, a substrate driving mechanism SPM that drives the substrate 102, and a curing unit 170 that cures the imprint material disposed on the substrate 102.

[0037] At least one of the original driving mechanism 160 and the substrate driving mechanism SPM can align the shot area of ​​the substrate 102 with the pattern area of ​​the original 101. At least one of the original driving mechanism 160 and the substrate driving mechanism SPM can bring the imprint material arranged on the substrate 102 into contact with the pattern area of ​​the original 101 and separate the imprint material from the pattern area. With the imprint material arranged on the substrate 102 in contact with the pattern area of ​​the original 101, the curing unit 170 hardens the imprint material. Then, the hardened imprint material is separated from the pattern area of ​​the original 101. As a result, a pattern made of a cured product of the imprint material is formed on the substrate 102. In other words, the pattern area of ​​the original 101 is transferred to the imprint material on the substrate 102.

[0038] The substrate positioning mechanism SPM may include a substrate stage 110 having a substrate chuck that holds the substrate 102, a drive mechanism 120 that drives the substrate stage 110, and a base member 130 that supports the drive mechanism 120. The drive mechanism 120 may have an actuator that includes a mover 1202 that moves together with the substrate stage 110 and a stator 124 fixed to the base member 130. The stator 124 may include a coil array as the object 80. The cooling device CA may be configured to cool the coil array as the object 80.

[0039] FIG. 5 schematically illustrates the configuration of a plasma processing apparatus 300 as an example of a substrate processing apparatus. The plasma processing apparatus 300 may be, for example, a CVD apparatus, an etching apparatus, or a sputtering apparatus. The plasma processing apparatus 300 may include a chamber 330 and one or more electrode structures as targets 80a, 80b disposed in the chamber 330. In the example of FIG. 5 , the substrate 302 may be supported by the target 80a. A gas for generating plasma may be supplied into the chamber 330. If the plasma processing apparatus 300 is configured as a CVD apparatus, a gas for film formation may be supplied into the chamber 330. If the plasma processing apparatus 300 is configured as an etching apparatus, a gas for etching may be supplied into the chamber 330. If the plasma processing apparatus 300 is configured as a sputtering apparatus, a gas for generating plasma may be supplied into the chamber 330, and a target may be attached to the electrode structure as the target 80b.

[0040] The cooling device CA may be configured to cool the objects 80a, 80b.

[0041] <Article Manufacturing Method> A method for manufacturing an article according to one aspect of the present invention can include a step of processing a substrate using a substrate processing apparatus, such as the above-described exposure apparatus 100, imprint apparatus 200, and plasma processing apparatus 300, and a step of processing the substrate processed by the step. The step of processing the substrate using the substrate processing apparatus can be, for example, a step of forming a pattern on the substrate, a step of forming a film on the substrate, or a step of etching the substrate or a film formed thereon. The step of processing the substrate can be, for example, a step of dividing (dicing) the substrate or a step of sealing the substrate.

[0042] A method for manufacturing an article, such as a device (semiconductor device, magnetic storage medium, liquid crystal display element, etc.), a color filter, or a hard disk, will be described. This manufacturing method includes a step of forming a pattern on a substrate (such as a wafer, glass plate, or film-like substrate) by irradiating the substrate with light using a substrate processing apparatus (such as an exposure apparatus) having a cooling device for cooling a heat-generating portion. This manufacturing method further includes a step (processing step) of processing the substrate on which the pattern has been formed. This processing step may include a step of removing a residual film of the pattern. This processing step may also include a step of etching the substrate using the pattern as a mask. This processing step may also include other well-known steps such as dicing, bonding, and packaging. The method for manufacturing an article according to this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to conventional methods.

[0043] Next, as an example of a method for manufacturing an article, an embodiment of a device manufacturing method using the above-described exposure apparatus will be described with reference to Figures 6 and 7. Figure 6 is a flowchart for explaining the manufacture of devices (semiconductor chips such as ICs and LSIs, LCDs, CCDs, etc.). Here, a method for manufacturing semiconductor chips will be described as an example.

[0044] In step S1 (circuit design), a circuit for a semiconductor device is designed. In step S2 (mask production), a mask (master) is produced based on the designed circuit pattern. In step S3 (wafer production), a wafer (substrate) is produced using a material such as silicon. In step S4 (wafer processing), called the pre-processing, an actual circuit is formed on the wafer using the mask and wafer with lithography technology using the exposure apparatus described above. Here, the exposure apparatus illuminates the master on which the circuit pattern is formed and projects an image of the master's circuit pattern onto the wafer, thereby forming the circuit pattern on the wafer. In step S5 (assembly), called the post-processing, the wafer produced in step S4 is used to create semiconductor chips, including assembly processes such as dicing and bonding and packaging (chip encapsulation). In step S6 (inspection), the semiconductor device produced in step S5 is inspected, including operational confirmation tests and durability tests. After these processes, the semiconductor device is completed and shipped (step S7).

[0045] FIG. 7 is a detailed flowchart of the wafer process in step S4. In step S11 (oxidation), the wafer surface is oxidized. In step S12 (CVD), an insulating film is formed on the wafer surface. In step S13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step S14 (ion implantation), ions are implanted into the wafer. In step S15 (resist processing), a photosensitive agent is applied to the wafer. In step S16 (exposure), an exposure device exposes the circuit pattern of the mask onto the wafer. In step S17 (development), the exposed wafer is developed. In step S18 (etching), portions other than the developed resist image are removed. In step S19 (resist stripping), the resist that is no longer needed after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

[0046] Although the preferred embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to these embodiments, and various modifications and changes are possible within the scope of the gist of the present invention.

[0047] Although an exposure apparatus, an imprint apparatus, and a plasma processing apparatus have been described as examples of substrate processing apparatuses, the present invention is not limited to these. Another example of the substrate processing apparatus may be a planarization apparatus that performs a process of forming a composition on a substrate so as to flatten it using a mold (flat template) having a flat portion without a concave-convex pattern. Another example of the substrate processing apparatus may be a drawing apparatus that performs a process of drawing on a substrate with a charged particle beam (such as an electron beam or an ion beam) via a charged particle optical system to form a pattern on the substrate.

[0048] The present invention is not limited to the above-described embodiments, and various modifications and variations can be made without departing from the spirit and scope of the present invention. Therefore, the following claims are appended to apprise the public of the scope of the present invention.

[0049] This application claims priority based on Japanese Patent Application No. 2023-199252, filed November 24, 2023, the entire contents of which are incorporated herein by reference.

Claims

1. A cooling device for cooling an object, comprising: a pump for circulating a first refrigerant; an evaporator for cooling the object by vaporizing the first refrigerant; a condenser for condensing the first refrigerant vaporized by the evaporator; and a pressure control unit for controlling the pressure of a first portion of the condenser in which the first refrigerant exists in a gaseous state.

2. A cooling device as described in claim 1, further comprising a detection unit disposed in the first portion for detecting a dew point of the first refrigerant in the first portion, and wherein the pressure control unit controls the pressure so that the dew point of the first refrigerant detected by the detection unit falls within a predetermined range.

3. A cooling device according to claim 1, wherein the pressure control section has a supply section for supplying a first gas to the first section and an exhaust section for exhausting a second gas from the first section.

4. The cooling device according to claim 3, wherein the exhaust section has an exhaust pump for exhausting the second gas.

5. The cooling device according to claim 3, wherein the pressure control section has a recovery section that recovers the vaporized first refrigerant contained in the second gas from the second gas.

6. The cooling device according to claim 1, further comprising a temperature regulator for adjusting the temperature of the first refrigerant.

7. The cooling system of claim 1, further comprising a throttle valve for regulating the pressure of said first refrigerant.

8. The cooling device according to claim 1, further comprising a sensor for measuring the temperature of said first refrigerant.

9. The cooling device according to claim 1, further comprising a cooling section having a heat exchanger disposed in the condenser and configured to cool the first refrigerant.

10. A substrate processing apparatus for processing substrates, comprising: a heat generating section that generates heat; and a cooling device according to claim 1, wherein the cooling device is configured to cool the heat generating section by vaporizing the first refrigerant with heat from the heat generating section.

11. A method for manufacturing an article, comprising the steps of: processing a substrate using the substrate processing apparatus according to claim 10; processing the processed substrate; and manufacturing an article from the processed substrate.

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