Substrate processing apparatus and control method therefor

Abstract

The present invention relates to a substrate processing apparatus, comprising: a plurality of suction units which, in order to separate a second substrate bonded to a first substrate, adheres to and lifts the upper surface of the second substrate; a negative-pressure control unit which individually controls the negative pressure of the plurality of suction units; and a processor which forms a separation initiation point at which a crack opens up, on any one side of a substrate-bonding surface along which the first substrate and the second substrate are bonded, and determines whether the substrates are separated.

Description

Substrate processing device and control method thereof

[0001] The present invention relates to a substrate processing device for separating a bonded substrate into individual substrates spaced apart from each other, and a control method thereof.

[0002] In recent years, semiconductor manufacturing processes have been trending toward larger diameters and thinner substrates, such as wafers, to increase productivity and lower manufacturing costs. Larger diameters and thinner substrates are more prone to warping or damage during transport or surface polishing.

[0003] In order to prevent warping or damage to a large and thin substrate during a return or polishing process, a process may be performed in which a carrier substrate is bonded to a device substrate to form a bonded substrate, the bonded substrate is returned or polished, and then the carrier substrate is separated from the device substrate in the bonded substrate.

[0004] A substrate processing device for separating a carrier substrate from a device substrate includes a lifting unit that lifts the carrier substrate by suction.

[0005] However, in the past, there was a problem in that crack propagation was not constant after the separation initiation point of the substrate was created, and a constant debonding force could not be confirmed even though multiple adsorption sites were controlled.

[0006] At this time, if the debonding force or debonding speed is not controlled, the carrier substrate may be damaged or the device pattern may be damaged. Therefore, in the process of separating and lifting the carrier substrate from the device substrate, precise control of the size and distribution of the suction force is required.

[0007] The background technology of the present invention is disclosed in Korean Patent Publication No. 10-2014-0033327 (published on March 18, 2014, title: Method for separating a product substrate from a carrier substrate).

[0008] The present invention is intended to solve the above problems, and its purpose is to provide a substrate processing device and a control method thereof that individually adjust the suction force of a plurality of suction units that suck up a substrate, so as to improve the yield and work speed of a substrate separation operation.

[0009] A substrate processing device according to one aspect of the present invention comprises: a plurality of suction units that lift and suction an upper surface of a second substrate bonded to a first substrate in order to separate the second substrate; a negative pressure control unit that individually controls negative pressure of the plurality of suction units; and a processor that forms a separation starting point where a crack starts on one side of a substrate bonding surface where the first substrate and the second substrate are bonded, and determines whether the substrates are separated.

[0010] In the present invention, the processor is characterized in that it separates the second substrate by controlling the negative pressure of each adsorption unit based on the distance from the separation start point of the first substrate and the second substrate through the control of the negative pressure control unit, thereby causing a crack to propagate in a direction away from the separation start point.

[0011] In the present invention, the processor is characterized in that it forms a separation initiation point where a crack starts by penetrating a separation member into one side of a substrate bonding surface where the first substrate and the second substrate are bonded.

[0012] In the present invention, the processor is characterized in that it forms a separation initiation point where a crack starts by using a laser on one side of a substrate bonding surface where the first substrate and the second substrate are bonded.

[0013] In the present invention, a plurality of displacement sensors are further included, each of which is installed between the plurality of adsorption parts, and the processor is characterized in that it determines whether the second substrate has been separated at a corresponding position where the displacement sensor is located based on the height of the second substrate detected through the displacement sensor.

[0014] In the present invention, a force measuring element for detecting a force applied to the entire lifting unit that is elevated by installing the plurality of suction units is further included, and the processor is characterized in that it performs a judgment of success in substrate separation based on whether a force value measured through the force measuring element is within an error range of a specified force setting value.

[0015] In the present invention, a plurality of force measuring elements are further included, each of which is installed in the plurality of suction portions and individually detects a force applied to each suction portion, and the processor is characterized in that, when the measured height of the second substrate separated and raised is lower than a designated height setting value, the force setting value of the individual force measuring elements installed in each suction portion is changed to be higher than the previous force setting value in order to increase the negative pressure of each suction portion.

[0016] A control method of a substrate processing device according to another aspect of the present invention comprises: a step of, by a processor, propagating a crack in a direction away from a separation start point by adjusting a negative pressure of each suction unit based on a distance from a separation start point of the first and second substrates to separate a second substrate bonded to a first substrate; and a step of, by the processor, changing a force setting value of an individual force measuring element installed in each suction unit to be higher than a previous force setting value in order to lift the second substrate higher by increasing the negative pressure of each suction unit when a measured value of a height of the second substrate lifted by each suction unit is lower than a designated height setting value.

[0017] In the present invention, in the step of propagating the crack, the processor is characterized in that it penetrates a separation member into one side of the substrate bonding surface where the first substrate and the second substrate are bonded to form the separation initiation point where the crack starts.

[0018] In the present invention, in order to determine whether the measured value of the height of the second substrate is lower than a specified height setting value, the processor is characterized in that it measures the height of the second substrate through a plurality of displacement sensors each installed between the plurality of adsorption parts.

[0019] In the present invention, the processor is characterized in that it determines whether the second substrate has been separated at the corresponding position where the displacement sensor is located by comparing the measured value of the height of the second substrate with a specified height setting value.

[0020] In the present invention, in order to determine whether the second substrate bonded to the first substrate has been completely separated, the processor is characterized by further including a step of determining whether a force value measured by a force measuring element that measures the force applied to the entire lifting portion having the plurality of suction portions installed and being raised or lowered is within an error range of a specified force setting value.

[0021] In the present invention, when the force value measured through the force measuring element is within the error range of the specified force setting value, the processor is characterized in that it finally performs a determination of success in separation of the second substrate.

[0022] In the present invention, in the step of changing the force setting value of the individual force measuring element installed in each of the above adsorption parts to be higher than the previous force setting value, the processor is characterized in that it repeatedly changes the force setting value of the individual force measuring element a specified number of repetitions.

[0023] According to one aspect of the present invention, the present invention individually controls the suction force of a plurality of suction units included in a lifting unit in response to the direction and speed of propagation of a crack between a first substrate and a second substrate, thereby stably separating the first substrate and the second substrate, and improving the yield and operation speed of the substrate separation operation.

[0024] FIG. 1 is an exemplary diagram showing a schematic configuration of a substrate processing device according to a first embodiment of the present invention.

[0025] FIG. 2 is a flowchart for explaining a control method of a substrate processing device according to the first embodiment of the present invention.

[0026] Figure 3 is an exemplary diagram showing a schematic configuration of a substrate processing device according to a second embodiment of the present invention.

[0027] Figure 4 is a flowchart for explaining a control method of a substrate processing device according to a second embodiment of the present invention.

[0028] FIG. 5 is an exemplary diagram for explaining a method of separating a substrate by adjusting the suction force for a plurality of suction portions in response to the flow in which a crack in the substrate propagates in FIG. 1.

[0029] FIG. 6 is an exemplary diagram illustrating that the number of adsorption pads constituting each adsorption portion may vary depending on the position of the adsorption portion on the substrate in FIG. 1 or FIG. 3.

[0030] Hereinafter, a substrate processing device and its control method according to one embodiment of the present invention will be described with reference to the attached drawings. Throughout this process, the thickness of lines and the sizes of components depicted in the drawings may be exaggerated for clarity and convenience. Furthermore, the terms described below are defined based on their functions in the present invention and may vary depending on the intentions or practices of the user or operator. Therefore, the definitions of these terms should be based on the overall content of this specification.

[0031] Fig. 1 is an exemplary diagram showing a schematic configuration of a substrate processing device according to a first embodiment of the present invention. Fig. 5 is an exemplary diagram explaining a method of separating a substrate by sequentially adjusting the suction force of a plurality of suction units in response to the flow in which a crack in the substrate propagates in Fig. 1.

[0032] As illustrated in FIG. 1, a substrate processing device according to a first embodiment of the present invention includes a plurality of adsorption units (61 to 65), displacement sensors (81 to 84), a force measuring element (90), a negative pressure control unit (110), a displacement measuring unit (120), a force measuring unit (130), and a processor (140).

[0033] Referring to FIG. 1, a substrate processing device according to a first embodiment of the present invention separates a second substrate (e.g., a carrier substrate) (42) bonded (or joined) to a first substrate (e.g., a device substrate) (41).

[0034] For example, the first substrate (41) may be a device substrate on which a microcircuit is formed on the surface and diced into semiconductor chip units, and the second substrate (42) may be a carrier substrate that prevents warping or damage to the first substrate (41).

[0035] At this time, the plane shape of the second substrate (6) may be circular.

[0036] The ring frame (10) is an annular member that surrounds a bonding substrate including a first substrate (41) and a second substrate (42) and is spaced apart from the first substrate (41) and the second substrate (42).

[0037] The adhesive tape (20) adheres and supports the lower surface of the first substrate (41) and the lower surface of the ring frame (10). The adhesive tape (20) can be flexibly bent and has a roughly circular flat shape. The ring frame (10) is adhered to the outer periphery of the adhesive tape (20) to prevent the adhesive tape (20) from being wrinkled or crumpled.

[0038] The bonding substrate of the substrate support member (30) can be raised while being fixed by suction. In this case, although not shown in the drawing, the height of the upper end of the bonding substrate can be higher than the height of the upper end of the ring frame (10).

[0039] The separating member (kn1 in FIG. 5) can penetrate into the bonding portion (50) between the first substrate (41) and the second substrate (42) from one side of the bonding substrate, i.e., from one side of the first substrate (41) and the second substrate (42), thereby forming a crack (see FIG. 5).

[0040] For example, the separating member (kn1) may be a blade. The blade may be moved (extended) horizontally to a height equal to the height of the boundary surface (or bonding portion (50)) between the first substrate (41) and the second substrate (42). The tip of the blade may be directed toward one side of the boundary surface (or bonding portion (50)) between the first substrate (41) and the second substrate (42).

[0041] Additionally, the separation member (kn1) may use a laser instead of a blade.

[0042] Displacement sensors (81 to 84) are formed between a plurality of adsorption parts (61 to 65) and measure the plane position and height of the second substrate (42) adsorbed on each adsorption part (61 to 65). At this time, as the second substrate (42) separates and rises upward, the distance (t1 to t4) measured by the displacement sensors (81 to 84) becomes shorter. Therefore, when the distance (t1 to t4) becomes shorter than the set value (T1 to T4), it means that the second substrate (42) has been separated.

[0043] The displacement measurement unit (120) collects the measurement values ​​detected through each displacement sensor (81 to 84).

[0044] The force measuring unit (130) measures the force before the second substrate (42) is separated and the force after the second substrate (42) is separated through the force measuring element (90).

[0045] The force measuring element (90) detects (measures) the force (F) applied to the entire lifting part (70).

[0046] For example, the separation of the second substrate (42) can be confirmed by measuring the difference in force before and after the separation of the second substrate (42) through the force measuring element (90). That is, the force measuring element (90) measures force (e.g., pulling force, pushing force) and outputs an electric signal corresponding to the resistance value or force value. For example, the force measuring element (90) may include a load cell.

[0047] The processor (140) can determine the separation state of the second substrate (42) using the values ​​measured through the displacement measuring unit (120) and the force measuring element (90).

[0048] The processor (140) can form a separation initiation point where a crack starts on one side of the substrate bonding surface where the first substrate (41) and the second substrate (42) are bonded, and determine whether the substrates have been separated.

[0049] The lifting timing, lifting height, and lifting speed of the lifting unit (70) can be automatically controlled or controlled by the operator.

[0050] The lifting part (70) pulls the second substrate (42) upward by using a plurality of suction parts (61 to 65) so that the second substrate (42) is separated from the first substrate (41) while the bonding substrate is supported on the substrate support part (30).

[0051] The lifting part (70) is placed on the upper side of the second substrate (42). The lifting part (70) may include a plurality of suction parts (61 to 65) and a horizontal frame (101).

[0052] The lifting unit (70) may include a horizontal frame (not shown) for supporting a plurality of suction units (61 to 65). The horizontal frame (not shown) may, for example, elevate and move the lifting unit (70) in a horizontal direction, like a crane.

[0053] The plurality of adsorption parts (61 to 65) lift the second substrate (42) by adsorption so that the crack between the first substrate (41) and the second substrate (42) widens and the second substrate (42) is separated from the first substrate (41). As shown in FIG. 5, the second substrate (42) is lifted by slowly lifting the crack from the part where the crack is formed by penetrating the bonding part (50) between the first substrate (41) and the second substrate (42) from one side of the bonded substrate, that is, one side of the first substrate (41) and the second substrate (42), and expanding (propagating) the crack to the opposite side.

[0054] For example, as shown in ① of FIG. 5, the plurality of adsorption parts (61 to 65) sequentially increase the adsorption force of each adsorption part (61 to 65) based on the distance from one side (i.e., the separation start point) of the first substrate (41) and the second substrate (42) that the blade tip of the separation member (kn1) first touches (e.g., by increasing the adsorption force in the order of adsorption part (61) that is close to the adsorption part (61) and the adsorption part (65) that is far away from the adsorption part (65)) (see ① to ⑥ of FIG. 5), and it can be seen that the second substrate (42) is stably and quickly separated as the initially formed crack gradually expands (propagates) to the opposite side.

[0055] At this time, in this embodiment, it is described as including 5 adsorption parts (61 to 65) as an example, but the number of adsorption parts is not limited to 5, and it should be noted that other embodiments may include fewer or more adsorption parts (e.g., 2 to 4, or 6 or more).

[0056] For reference, in the drawings shown in FIGS. 1 and 3, each suction part (61 to 65) is shown in cross section and is therefore not visible, but depending on the shape of the substrate (e.g., circular), each suction part (61 to 65) may be composed of a different number of suction pads (see FIG. 6 shown in perspective view).

[0057] For example, as shown in FIG. 6, the first adsorption portion (61) and the fifth adsorption portion (65) formed at the edge of the substrate may each be composed of three adsorption pads, the second adsorption portion (62) and the fourth adsorption portion (64) may each be composed of four adsorption pads, and the third adsorption portion (63) formed at the center portion of the substrate may be composed of five adsorption pads.

[0058] However, it should be noted that the number of suction pads constituting each suction portion (61 to 65) illustrated in FIG. 6 is an example to explain that the number of suction pads may vary depending on the shape of the substrate (i.e., depending on the position of each suction portion on the substrate).

[0059] At this time, each of the suction pads constituting each suction part (61 to 65) is formed in the same shape, and with reference to one suction pad configured in the first suction part (61), it may include a connecting part (61a) at the upper end, a suction plate (61c) at the lower end, and bellows (61b) between the connecting part (61a) and the suction plate (61c), and an intake path (not shown) through which air can flow may be formed inside.

[0060] The connecting portion (61a) can be coupled to the lower end of the channel beam (not shown) of the lifting portion (70), and the suction plate (61c) can be in surface contact with the upper surface of the second substrate (42). The bellows (61b) can include a plurality of wrinkles (61b') arranged in an up-down direction.

[0061] The bellows (61b) can be elastically biased in a direction in which the gap between the plurality of folds (61b') is narrowed.

[0062] Therefore, the first adsorption portion (61) can be elastically deformed in the vertical direction.

[0063] In other words, when force is applied to the first suction part (61) so that the connection part (61a) and the suction plate (61c) move apart, the bellows (16b) is elastically deformed, the gap between the plurality of wrinkles (61b') increases, and the length of the first suction part (61) can be extended. In this state, when the force applied to the first suction part (61) is removed, the bellows (61b) is elastically restored, the gap between the plurality of wrinkles (61b') narrows, and the length of the first suction part (61) can be reduced to its original size.

[0064] The negative pressure control unit (110) controls the negative pressure distributed to each of the plurality of adsorption units (61 to 65), and for this purpose, negative pressure passages that are individually connected to allow air flow are formed.

[0065] For example, the negative pressure control unit (110) can generate negative pressure using a vacuum pump (not shown) to control the negative pressure of each adsorption unit (61 to 65). For example, the negative pressure can be gradually increased in response to the direction and speed of crack expansion (propagation) from the first adsorption unit (61) where cracks first begin to the last adsorption unit (65).

[0066] Hereinafter, a method for separating a bonded substrate using a substrate processing device according to the first embodiment of the present invention is described.

[0067] FIG. 2 is a flowchart for explaining a control method of a substrate processing device according to the first embodiment of the present invention.

[0068] Referring to FIG. 2, when a bonded substrate (i.e., a substrate in which a first substrate (41) and a second substrate (42) are bonded vertically) is inserted into a substrate processing device (S101), the processor (140) adsorbs and fixes the first substrate (41) of the bonded substrate by the substrate support member (30) (S102), raises the substrate support member (30) to a designated position (S103), and lowers the lifting member (70) to a designated position (S104).

[0069] Here, the designated position of the substrate support member (30) is a position where the end of the separating member (kn1) is at the same height as the boundary area (i.e., bonding portion (50)) of the first substrate (41) and the second substrate (42), and is higher than the ring frame (10).

[0070] And the designated position of the lifting part (70) is a position where the plurality of suction parts (61 to 65) can come into contact with the upper surface of the second substrate (42) when extended.

[0071] When the lifting part (70) is lowered to a designated position and the suction parts (61 to 65) come into contact with the second substrate (42) (S105), the processor (140) causes the first suction part (61) located closest to the position where a crack is to start (i.e., the separation starting point) to be suctioned to the second substrate (42) (S106), and inserts the separation member (kn1) into the position where a crack is to start (i.e., the designated side of the first substrate (41) and the second substrate (42)) to a designated depth (e.g., 1 mm to 5 mm) to create a crack (see ① of FIG. 5) (S107).

[0072] At this time, the adsorption force of the first adsorption part (61) can be adjusted to a preset value (e.g., 20 to 100%).

[0073] When a crack is generated at the location where the crack will start (i.e., the separation starting point), the processor (140) additionally adsorbs the next sequence of adsorption parts (i.e., the second adsorption part (62)) corresponding to the direction in which the crack will propagate to the second substrate (42), and adjusts the adsorption force of the first adsorption part (61) and the second adsorption part (62) to a preset value (e.g., 20 to 100%) (S108).

[0074] That is, the adsorption force of the first and second adsorption parts (61 to 62) can be continuously adjusted (e.g., 20 to 100%) in response to the degree to which the second substrate (42) is separated.

[0075] And if the distance (t1) of the second substrate (42) measured through the first displacement sensor (81) within a preset time becomes closer to the preset value (T1), it is determined that the second substrate (42) has been successfully separated at that location, and if the distance (t1) of the second substrate (42) measured through the first displacement sensor (81) within a preset time does not become closer to the preset value (T1), the suction force of the first and second suction parts (61, 62) is repeatedly and continuously adjusted (S108 to S109).

[0076] If the substrate separation fails even though the suction force of the first and second suction parts (61, 62) is repeatedly adjusted according to the specified number of repetitions, the substrate separation process is stopped, and if successful, the next step is performed.

[0077] If the substrate separation process by the first and second adsorption units (61, 62) is successful (example of S109), the processor (140) additionally adsorbs the next order of adsorption units (i.e., the third adsorption unit (63)) corresponding to the direction in which the crack will propagate to the second substrate (42), and adjusts the adsorption force of the first to third adsorption units (61 to 63) to a preset value (e.g., 20 to 100%) (S110).

[0078] That is, the adsorption force of the first to third adsorption parts (61 to 63) can be continuously adjusted (e.g., 20 to 100%) in response to the degree to which the second substrate (42) is separated.

[0079] And if the distance (t2) of the second substrate (42) measured through the second displacement sensor (82) within the preset time becomes closer to the preset value (T2), it is determined that the second substrate (42) has been successfully separated at that location, and if the distance (t2) of the second substrate (42) measured through the second displacement sensor (82) within the preset time does not become closer to the preset value (T2), the suction force of the first to third suction parts (61 to 63) is repeatedly and continuously adjusted (S110 to S111).

[0080] If the substrate separation fails even though the suction force of the first to third suction parts (61 to 63) is repeatedly adjusted according to the specified repetition number setting, the substrate separation process is stopped, and if successful, the next step is performed.

[0081] If the substrate separation process by the first to third adsorption units (61 to 63) is successful (example of S111), the processor (140) additionally adsorbs the next order of adsorption units (i.e., the fourth adsorption unit (64)) corresponding to the direction in which the crack will propagate to the second substrate (42), and adjusts the adsorption force of the first to fourth adsorption units (61 to 64) to a preset value (e.g., 20 to 100%) (S112).

[0082] That is, the adsorption force of the first to fourth adsorption parts (61 to 64) can be continuously adjusted (e.g., 20 to 100%) in response to the degree to which the second substrate (42) is separated.

[0083] And if the distance (t3) of the second substrate (42) measured through the third displacement sensor (83) within the preset time becomes closer to the preset value (T3), it is determined that the second substrate (42) has been successfully separated at that location, and if the distance (t3) of the second substrate (42) measured through the third displacement sensor (83) within the preset time does not become closer to the preset value (T3), the suction force of the first to fourth suction parts (61 to 64) is repeatedly and continuously adjusted (S112 to S113).

[0084] If the substrate separation fails even though the suction force of the first to fourth suction parts (61 to 64) is repeatedly adjusted according to the specified repetition number setting, the substrate separation process is stopped, and if successful, the next step is performed.

[0085] If the substrate separation process by the first to fourth adsorption units (61 to 64) is successful (example of S113), the processor (140) additionally adsorbs the next order of adsorption units (i.e., the fifth adsorption unit (65)) corresponding to the direction in which the crack will propagate to the second substrate (42), and adjusts the adsorption force of the first to fifth adsorption units (61 to 65) to a preset value (e.g., 20 to 100%) (S114).

[0086] That is, the adsorption force of the first to fifth adsorption parts (61 to 65) can be continuously adjusted (e.g., 20 to 100%) in response to the degree to which the second substrate (42) is separated.

[0087] And if the distance (t4) of the second substrate (42) measured through the fourth displacement sensor (84) within the preset time becomes closer to the preset value (T4), it means that the second substrate (42) has been successfully separated at that location, and if the distance (t4) of the second substrate (42) measured through the fourth displacement sensor (84) within the preset time does not become closer to the preset value (T4), the suction force of the first to fifth suction parts (61 to 65) is repeatedly and continuously adjusted (S114 to S115).

[0088] At this time, if the substrate separation process by the 1st to 5th adsorption parts (61 to 65) is successful (example of S115), the processor (140) determines the final debonding (i.e., the substrate separation success) if the value (F) measured by the force measuring element (90) that measures the force (F) applied to the entire lifting part (70) is within the error range of the specified set value (TF) (e.g., 0±10N) (example of S116).

[0089] That is, since there is no displacement sensor after the last suction part (i.e., the fifth suction part (65)), the force measuring element (90) serves to check whether the second substrate (42) is completely separated in place of the displacement sensor.

[0090] Accordingly, although not shown in the drawing, if the value (F) measured through the force measuring element (90) does not fall within the error range of the specified set value (TF) (e.g., 0±10N), the suction force of at least one of the first to fifth suction parts (61 to 65) can be repeatedly and continuously adjusted.

[0091] However, if the substrate separation fails (No in S116) even though the suction force of the first to fifth suction parts (61 to 65) is repeatedly adjusted according to the specified repetition number setting, the substrate separation process is stopped, and if the substrate separation is successful, the next step is performed.

[0092] At this time, the number of repetitions to control the suction force can be adjusted.

[0093] And finally, when a debonding judgment (i.e., a judgment of success in substrate separation) is made (example of S116), the processor (140) raises the lifting unit (70) (S116) to remove the first substrate (41) and the second substrate (42) (S117).

[0094] For reference, although this embodiment is described as including five adsorption parts (61 to 65) as an example, the number of adsorption parts is not limited to five, and it should be noted that other embodiments may include fewer or more adsorption parts (e.g., two to four, or six or more).

[0095] Meanwhile, in the first embodiment described with reference to FIGS. 1 and 2, the displacement sensor (81 to 84) installed between a plurality of suction parts (61 to 65) is used to check whether the second substrate (42) has been separated. However, since the displacement sensor is not structurally installed after the last suction part (i.e., the fifth suction part (65)), a force measuring element (90) must be used instead of the displacement sensor to finally check whether the second substrate (42) has been completely separated.

[0096] Figure 3 is an exemplary diagram showing a schematic configuration of a substrate processing device according to a second embodiment of the present invention.

[0097] As illustrated in FIG. 3, a substrate processing device according to a second embodiment of the present invention includes a plurality of adsorption units (61 to 65), displacement sensors (81 to 84), force measuring elements (90 to 95), negative pressure control unit (110), displacement measuring unit (120), force measuring unit (130), and processor (140).

[0098] Referring to FIG. 3, a substrate processing device according to a second embodiment of the present invention, similar to the substrate processing device according to the first embodiment, separates a second substrate (e.g., a carrier substrate) (42) bonded (or joined) to a first substrate (e.g., a device substrate) (41).

[0099] However, the substrate processing device according to the second embodiment of the present invention illustrated in FIG. 3 is different in that, in addition to the entire force measuring element (90) described in the first embodiment, individual force measuring elements (91 to 95) are additionally installed in each of the plurality of adsorption parts (61 to 65).

[0100] Accordingly, the force measuring unit (130) measures the force before the second substrate (42) is separated and the force after the second substrate (42) is separated at each location absorbed by the plurality of absorbing units (61 to 65) through the entire force measuring element (90) and the individual force measuring elements (91 to 95).

[0101] Here, the force measuring elements (91 to 95) measure force (e.g., pulling force, pushing force) and output an electrical signal corresponding to the resistance value or force value. For example, the force measuring elements (91 to 95) may include a load cell.

[0102] The processor (140) can more accurately determine the separation state of the second substrate (42) by using the values ​​measured through the displacement measuring unit (120) and the overall force measuring element (90) and the individual force measuring elements (91 to 95).

[0103]

[0104] *Meanwhile, in this embodiment, each operation is described separately to help understand the above components (110 to 140), but it should be noted that they may be implemented by integrating them into the processor (140) depending on the embodiment.

[0105] For convenience of explanation, descriptions of components that overlap with those of the first embodiment below (e.g., negative pressure control unit, displacement measurement unit) are omitted.

[0106]

[0107] *Below, a method for separating a bonded substrate using a substrate processing device according to a second embodiment of the present invention is described.

[0108] Figure 4 is a flowchart for explaining a control method of a substrate processing device according to a second embodiment of the present invention.

[0109] Referring to FIG. 4, when a bonded substrate (i.e., a substrate in which a first substrate (41) and a second substrate (42) are bonded vertically) is inserted into a substrate processing device (S201), the processor (140) adsorbs and fixes the first substrate (41) of the bonded substrate by the substrate support member (30) (S202), raises the substrate support member (30) to a designated position (S203), and lowers the lifting member (70) to a designated position (S204).

[0110] Here, the designated position of the substrate support member (30) is a position where the end of the separating member (kn1) is at the same height as the boundary region (i.e., bonding portion (50)) of the first substrate (41) and the second substrate (42), and is higher than the ring frame (10). In addition, the designated position of the lifting member (70) is a position where the plurality of suction portions (61 to 65) can contact the upper surface of the second substrate (42) when extended.

[0111] When the lifting part (70) is lowered to a designated position and the suction parts (61 to 65) come into contact with the second substrate (42) (S205), the processor (140) adjusts the negative pressure (suction force) of the first suction part (61) located closest to the position where a crack is to start (i.e., the separation starting point) to the force value set in the first force measuring element (91) to suction the second substrate (42) (S206), and inserts the separation member (kn1) into the position where a crack is to start (i.e., the designated side of the first substrate (41) and the second substrate (42)) to a designated depth (e.g., 1 mm to 5 mm) to create a crack (crack) (see ① of FIG. 5) (S207).

[0112] At this time, the negative pressure (adsorption force) of the first adsorption part (61) is initially adjusted to the force value set in the first force measuring element (91) (S208).

[0113] After this, when a crack is generated at the location where the crack starts (i.e., the separation starting point), the crack propagates by the suction force of the first suction part (61), and accordingly, when the distance (t1) of the second substrate (42) measured through the first displacement sensor (81) within a preset time becomes closer to the set value (T1) (Yes in S209), the processor (140) determines that the second substrate (42) has been successfully separated at that location, and when the distance (t1) of the second substrate (42) measured through the first displacement sensor (81) within a preset time does not become closer to the set value (T1) (No in S209), the set value of the first force measuring element (91) is repeatedly and continuously changed (e.g., the set value is changed to a higher value) (S208 to S209).

[0114] That is, when the setting value of the first force measuring element (91) is changed to a high value, the processor (140) increases the negative pressure (adsorption force) of the first adsorption part (61).

[0115] Meanwhile, when the distance (t1) of the second substrate (42) measured through the first displacement sensor (81) within a preset time becomes closer to the preset value (T1) (example of S209), the processor (140) maintains the negative pressure (adsorption force) of the first adsorption part (61), and then additionally adsorbs the next sequence of adsorption parts (i.e., the second adsorption part (62)) corresponding to the direction in which the crack will propagate to the second substrate (42), and adjusts the adsorption force of the second adsorption part (62) to the force value set in the second force measuring element (92) to adsorb it to the second substrate (42) (S210).

[0116] At this time, the negative pressure (adsorption force) of the second adsorption part (62) is initially adjusted to the force value set in the second force measuring element (92) (S210).

[0117] After this, the crack propagates due to the suction force of the second suction portion (62), and accordingly, if the distance (t2) of the second substrate (42) measured through the second displacement sensor (82) within a preset time becomes closer to the set value (T2) (Yes in S211), the processor (140) determines that the second substrate (42) has been successfully separated at the corresponding position, and if the distance (t2) of the second substrate (42) measured through the second displacement sensor (82) within a preset time does not become closer to the set value (T2) (No in S211), the set value of the second force measuring element (92) is repeatedly and continuously changed (e.g., the set value is changed to a higher value) (S210 to S211).

[0118] That is, when the setting value of the second force measuring element (92) is changed to a high value, the processor (140) increases the negative pressure (adsorption force) of the second adsorption unit (62).

[0119] Meanwhile, when the distance (t2) of the second substrate (42) measured through the second displacement sensor (82) within a preset time becomes closer to the preset value (T2) (example of S211), the processor (140) maintains the negative pressure (adsorption force) of the second adsorption unit (62), and then additionally adsorbs the next sequence of adsorption units (i.e., the third adsorption unit (63)) corresponding to the direction in which the crack will propagate to the second substrate (42), and adjusts the adsorption force of the third adsorption unit (63) to the force value set in the third force measuring element (93) so as to adsorb it to the second substrate (42) (S212).

[0120] At this time, the negative pressure (adsorption force) of the third adsorption part (63) is initially adjusted to the force value set in the third force measuring element (93) (S212).

[0121] After this, the crack propagates due to the suction force of the third suction portion (63), and accordingly, if the distance (t3) of the second substrate (42) measured through the third displacement sensor (83) within a preset time becomes closer to the set value (T3) (Yes in S213), the processor (140) determines that the second substrate (42) has been successfully separated at the position, and if the distance (t3) of the second substrate (42) measured through the third displacement sensor (83) within a preset time does not become closer to the set value (T3) (No in S213), the set value of the third force measuring element (93) is repeatedly and continuously changed (e.g., the set value is changed to a higher value) (S212 to S213).

[0122] That is, when the setting value of the third force measuring element (93) is changed to a high value, the processor (140) increases the negative pressure (adsorption force) of the third adsorption unit (63).

[0123] Meanwhile, when the distance (t3) of the second substrate (42) measured through the third displacement sensor (83) within a preset time becomes closer to the preset value (T3) (example of S213), the processor (140) maintains the negative pressure (adsorption force) of the third adsorption unit (63), and then additionally adsorbs the next sequence of adsorption units (i.e., the fourth adsorption unit (64)) corresponding to the direction in which the crack will propagate to the second substrate (42), and adjusts the adsorption force of the fourth adsorption unit (64) to the force value set in the fourth force measuring element (94) so ​​as to adsorb it to the second substrate (42) (S214).

[0124] At this time, the negative pressure (adsorption force) of the fourth adsorption unit (64) is initially adjusted to the force value set in the fourth force measuring element (94) (S214).

[0125] After this, the crack propagates due to the suction force of the fourth suction portion (63), and accordingly, if the distance (t4) of the second substrate (42) measured through the fourth displacement sensor (84) within a preset time becomes closer to the set value (T4) (Yes in S215), the processor (140) determines that the second substrate (42) has been successfully separated at the corresponding position, and if the distance (t4) of the second substrate (42) measured through the fourth displacement sensor (84) within a preset time does not become closer to the set value (T4) (No in S215), the set value of the fourth force measuring element (94) is repeatedly and continuously changed (e.g., the set value is changed to a higher value) (S214 to S215).

[0126] That is, when the setting value of the fourth force measuring element (94) is changed to a high value, the processor (140) increases the negative pressure (adsorption force) of the fourth adsorption unit (64).

[0127] Meanwhile, when the distance (t4) of the second substrate (42) measured through the fourth displacement sensor (84) within a preset time becomes closer than the preset value (T4) (example of S215), the processor (140) maintains the negative pressure (adsorption force) of the fourth adsorption unit (64), and then additionally adsorbs the next sequence of adsorption units (i.e., the fifth adsorption unit (65)) corresponding to the direction in which the crack will propagate to the second substrate (42), and adjusts the adsorption force of the fifth adsorption unit (65) to the force value set in the fifth force measuring element (95) so as to adsorb it to the second substrate (42) (S216).

[0128] At this time, the negative pressure (adsorption force) of the fifth adsorption unit (65) is initially adjusted to the force value set in the fifth force measuring element (95) (S216).

[0129] After this, the crack propagates due to the suction force of the fifth suction part (65), and since there is no displacement sensor after the last suction part (i.e., the fifth suction part (65)), the processor (140) maintains the negative pressure (suction force) of the fifth suction part (65) according to the force value set in the fifth force measuring element (95), and then measures the force (F) applied to the entire lifting part (70) through the force measuring element (90). If the measured value (F) is within the error range of the specified set value (TF) (e.g., 0±10 N) (example of S217), a final debonding judgment (i.e., a judgment of success in substrate separation) is made.

[0130] That is, the force measuring element (90) serves to replace the displacement sensor and ultimately confirm whether the second substrate (42) is completely separated.

[0131] Accordingly, although not shown in the drawing, if the value (F) measured through the force measuring element (90) does not fall within the error range of the specified set value (TF) (e.g., 0±10N), the set value of the fifth force measuring element (95) is repeatedly changed (e.g., the set value is changed to a higher value) (S216 to S217).

[0132] That is, when the setting value of the fifth force measuring element (95) is changed to a high value, the processor (140) increases the negative pressure (adsorption force) of the fifth adsorption unit (65).

[0133] However, if the substrate separation fails even when the suction force of the fifth suction part (65) is repeatedly adjusted by changing the setting value of the fifth force measuring element (95) according to the specified repetition number setting, the substrate separation process is stopped, and if successful, the next step is performed.

[0134] At this time, the number of repetitions to control the suction force can be adjusted.

[0135] And finally, when the debonding judgment (i.e., the judgment of success in substrate separation) is made, the processor (140) raises the lifting unit (70) (S218) to remove the first substrate (41) and the second substrate (42) (S219).

[0136] For reference, although this embodiment is described as including five adsorption parts (61 to 65) as an example, the number of adsorption parts is not limited to five, and it should be noted that other embodiments may include fewer or more adsorption parts (e.g., two to four, or six or more).

[0137] As described above, the present invention has the effect of stably separating the first substrate and the second substrate, and improving the yield and work speed of the substrate separation work by individually controlling the suction force of a plurality of suction units included in the lifting unit in response to the direction and speed of the crack propagation between the first substrate and the second substrate.

[0138] Although the present invention has been described with reference to the embodiments shown in the drawings, these are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible from the drawings. Accordingly, the technical protection scope of the present invention should be defined by the following claims. In addition, the implementations described in this specification may be implemented as, for example, a method or process, a device, a software program, a data stream, or a signal. Even if discussed only in the context of a single form of implementation (e.g., discussed only as a method), the implementation of the discussed features may also be implemented in other forms (e.g., a device or a program). The device may be implemented by suitable hardware, software, firmware, etc. The method may be implemented in a device such as a processor, which generally refers to a processing device including, for example, a computer, a microprocessor, an integrated circuit, or a programmable logic device. The processor also includes a communication device such as a computer, a cell phone, a personal digital assistant ("PDA"), and other devices that facilitate the communication of information between end-users.

Claims

1. A plurality of suction parts that lift up and absorb the upper surface of the second substrate to separate the second substrate bonded to the first substrate; A negative pressure control unit for individually controlling the negative pressure of the plurality of adsorption units; and A substrate processing device characterized by including a processor that forms a crack initiation point on one side of a substrate bonding surface where the first substrate and the second substrate are bonded, and determines whether the substrates have been separated.

2. In paragraph 1, The above processor, A substrate processing device characterized in that the negative pressure of each adsorption section is adjusted based on the distance from the separation initiation point of the first and second substrates through the control of the negative pressure control section, thereby causing a crack to propagate in a direction away from the separation initiation point, thereby separating the second substrate.

3. In paragraph 1, The above processor, A substrate processing device characterized in that a separation member is penetrated into one side of a substrate bonding surface where the first substrate and the second substrate are bonded to form a separation initiation point where cracks begin.

4. In paragraph 1, The above processor, A substrate processing device characterized in that it forms a crack initiation point at one side of a substrate bonding surface where the first substrate and the second substrate are bonded using a laser.

5. In paragraph 1, It further includes a plurality of displacement sensors each installed between the plurality of adsorption parts, The above processor, A substrate processing device characterized in that it determines whether the second substrate has been separated at a corresponding location where the displacement sensor is located based on the height of the second substrate detected by the displacement sensor.

6. In paragraph 1, It further includes a force measuring element that detects the force applied to the entire lifting section in which the above plurality of suction units are installed and raised, The above processor, A substrate processing device characterized in that a substrate separation success judgment is performed based on whether the force value measured through the force measuring element is within the error range of a specified force setting value.

7. In paragraph 1, It further includes a plurality of force measuring elements installed on each of the plurality of suction portions to individually detect the force applied to each suction portion, The above processor, A substrate processing device characterized in that, when the measured height of the second substrate separated and raised is lower than a designated height setting value, the force setting value of each force measuring element installed in each adsorption unit is changed to be higher than the previous force setting value in order to increase the negative pressure of each adsorption unit.

8. In order to separate the second substrate bonded to the first substrate, the processor controls the negative pressure of each adsorption portion based on the distance from the separation starting point of the first substrate and the second substrate, thereby propagating the crack in a direction away from the separation starting point; and A method for controlling a substrate processing device, characterized in that the method comprises a step of the processor changing the force setting value of an individual force measuring element installed in each suction unit to be higher than the previous force setting value in order to increase the negative pressure of each suction unit and lift it higher when the measured value of the height of the second substrate lifted by each suction unit is lower than a designated height setting value.

9. In the step of propagating the crack in paragraph 8, The above processor, A control method for a substrate processing device, characterized in that a separation member is penetrated into one side of a substrate bonding surface where the first substrate and the second substrate are bonded to form a separation initiation point where a crack starts.

10. In the 8th paragraph, to determine whether the measured value of the height of the second substrate is lower than the specified height setting value, The above processor, A control method for a substrate processing device, characterized in that the height of the second substrate is measured through a plurality of displacement sensors each installed between the plurality of adsorption parts.

11. In paragraph 10, By comparing the measured height value of the above second substrate with the specified height setting value, The above processor, A control method for a substrate processing device, characterized in that it determines whether the second substrate has been separated at a corresponding position where the displacement sensor is located.

12. In paragraph 8, In order to determine whether the second substrate bonded to the first substrate is completely separated, The above processor, A control method for a substrate processing device, characterized in that it further includes a step of determining whether a force value measured by a force measuring element that measures the force applied to the entire lifting section in which the plurality of suction units are installed and raised is within an error range of a specified force setting value.

13. In the 12th paragraph, if the force value measured through the force measuring element is within the error range of the specified force setting value, The above processor, A control method for a substrate processing device, characterized in that it finally performs a determination of success in separation of the second substrate.

14. In the step of paragraph 8, in the step of changing the force setting value of each force measuring element installed in each adsorption section to be higher than the previous force setting value, The above processor, A control method for a substrate processing device, characterized in that the force setting value of the individual force measuring element is repeatedly changed for a specified number of repetitions.

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