Plasma source assembly, plasma forming method, and substrate processing apparatus

Abstract

A plasma source assembly according to one aspect of the present invention comprises: a reaction body including a plurality of body parts, each having a gas diffusion space formed therein, and a plurality of insulating parts coupled between the plurality of body parts, wherein the gas diffusion spaces form a toroidal channel as a whole; a plurality of magnetic cores which are disposed spaced apart from each other along the toroidal channel and each surround the reaction body; a plurality of windings that are wound on the plurality of magnetic cores and receive power from a power supply unit, thereby inducing a magnetic force in the plurality of magnetic cores; and a plurality of switches respectively connected between end portions of two adjacent body parts among the plurality of body parts.

Description

Plasma source assembly, plasma forming method and substrate processing device

[0001] The present invention relates to semiconductor manufacturing, and more specifically, to a plasma source assembly and a plasma forming method using the same, and a substrate processing device using the plasma source assembly.

[0002] In a substrate processing device for forming a semiconductor device, a device and process are being studied that perform substrate processing by supplying activated reactants, such as radicals, into the process chamber using a plasma source assembly outside the process chamber, such as a remote plasma generator, without directly forming plasma within the process chamber. By using a remote plasma generator in this way, a desired reactant can be generated and supplied into the process chamber, and since plasma is not directly formed within the process chamber, plasma damage on the substrate can be prevented.

[0003] Furthermore, to reduce the path by which radicals generated from a remote plasma generator are supplied to the substrate, a structure is being studied that couples the plasma source assembly to the gas injection unit of the process chamber. This structure can increase the activity ratio of radicals supplied from the plasma source assembly to the substrate, thereby enhancing process efficiency.

[0004] However, the aforementioned remote plasma generator or plasma source assembly is designed to use power under limited conditions, and thus has a problem in that plasma ignition failure frequently occurs.

[0005] The present invention is intended to solve the above-mentioned problems, and one technical task according to the present invention is to provide a plasma source assembly and a plasma forming method capable of increasing the plasma ignition success rate.

[0006] Another technical problem according to the present invention is to provide a substrate processing device capable of increasing the plasma ignition success rate and increasing the activity ratio of radicals, thereby increasing process efficiency.

[0007] Another technical problem according to the present invention is to provide a plasma source assembly, a plasma forming method, and a substrate processing device that can increase the operating efficiency by reducing damage to components within the plasma source assembly during plasma ignition and increasing the maintenance cycle thereof.

[0008] However, these tasks are exemplary and the scope of the present invention is not limited thereby.

[0009] According to an aspect of the present invention for solving the technical problem of the present invention, a plasma source assembly may include a reaction body including a plurality of body parts each having gas diffusion spaces formed therein, and a plurality of insulating parts coupled between the plurality of body parts, wherein the plurality of body parts are arranged such that the gas diffusion spaces form a toroidal channel as a whole, a plurality of magnetic cores each surrounding the reaction body and spaced apart from each other along the toroidal channel, a plurality of windings arranged to wind the plurality of magnetic cores and receiving power from a power supply to induce a magnetic force in the plurality of magnetic cores, a plurality of switches each connected between ends of adjacent two body parts of the plurality of body parts such that the plurality of body parts are electrically connected or electrically insulated by bypassing the plurality of insulating parts, and a control unit that controls the power supply and the plurality of switches to control the formation of plasma in the toroidal channel, and controls at least one of the plurality of switches to be turned on when the plasma in the toroidal channel is ignited.

[0010] According to the plasma source assembly, the control unit can control the plurality of switches so that the number of turns-off of the plurality of switches when the plasma in the toroidal channel is maintained after ignition is greater than the number of turns-off of the plurality of switches when the plasma is ignited.

[0011] According to the above plasma source assembly, the control unit can control to turn off again the at least one switch that is turned on when the plasma is ignited while the plasma is maintained.

[0012] According to the above plasma source assembly, the control unit can alternately select at least one switch among the plurality of switches when repeatedly performing ignition of the plasma within the toroidal channel.

[0013] According to the plasma source assembly, when the plasma is ignited, the control unit can keep only one of the plurality of switches in a turned-off state and turn on the remaining switches, and when the plasma is maintained, can turn off the remaining switches that were turned on when the plasma was ignited so that all of the plurality of switches are turned off.

[0014] According to the plasma source assembly, the plurality of body parts may each include first body parts having a first length and a first width and second body parts having a second length and a second width, wherein the first length is greater than the second length, the second width is greater than the second width, and the plurality of magnetic cores may be arranged to surround the second body parts of the plurality of body parts.

[0015] According to the plasma source assembly, flanges may be coupled to the ends of the second body parts, one side of the first body parts may be coupled to the flanges of one side of the second body parts, and the plurality of insulating parts may be coupled between the flanges of the other side of the second body parts and the other sides of the first body parts.

[0016] According to the above plasma source assembly, at least one gas inlet may be formed on the upper surface of the first body parts, and a plurality of gas outlets may be formed on the lower surface of the first body parts.

[0017] A plasma forming method according to another aspect of the present invention for solving the technical problem according to the present invention may include an ignition step of applying power to the plurality of windings from the power supply unit, turning on at least one switch among the plurality of switches, and igniting plasma in the toroidal channel, and a maintenance step of maintaining the plasma in the toroidal channel, using the plasma source assembly described above.

[0018] According to the above plasma forming method, the number of turns-off of the plurality of switches in the maintenance step may be greater than the number of turns-off of the plurality of switches in the ignition step.

[0019] According to the above plasma forming method, in the maintenance step, the control unit can control to turn off again the at least one switch that was turned on when the plasma was ignited.

[0020] According to the above plasma forming method, in the ignition step, only one of the plurality of switches is maintained in a turned-off state and the remaining switches are turned on, and in the maintenance step, the remaining switches that were turned on when the plasma was ignited can be turned off again so that all of the plurality of switches are turned off.

[0021] According to one aspect of the present invention for solving the technical problem of the present invention, a substrate processing device may include a process chamber having a reaction space formed therein, a substrate support unit coupled to the process chamber to support a substrate within the reaction space, and a gas injection unit coupled to the process chamber so as to face the substrate support unit to inject a process gas into the reaction space, wherein the gas injection unit may include at least one of the aforementioned plasma source assemblies.

[0022] According to the substrate processing device, the at least one plasma source assembly may include a first plasma source assembly and a second plasma source assembly arranged to surround the first plasma source assembly.

[0023] According to the above substrate processing device, the gas injection unit may include an injection plate for injecting an advanced process gas from the at least one plasma source assembly onto the substrate support.

[0024] According to some embodiments of the present invention, including a plasma source assembly and a plasma forming method, the success rate of plasma ignition can be increased by controlling the on-off of a switch between insulating parts.

[0025] In addition, according to a substrate processing device according to some embodiments of the present invention, the plasma ignition success rate can be increased by employing the above-described plasma source assembly, and the process reliability can be increased by increasing the activity ratio of radicals by combining the plasma source assembly with a gas injection unit.

[0026] Of course, the scope of the present invention is not limited by these effects.

[0027] FIG. 1 is a schematic diagram showing a plasma source assembly according to one embodiment of the present invention.

[0028] Figure 2 is a schematic diagram showing power delivery in the plasma source assembly of Figure 1.

[0029] Figures 3 and 4 are schematic diagrams showing a plasma forming method of the plasma source assembly of Figure 1.

[0030] Fig. 5 is a flowchart showing a plasma forming method of the plasma source assembly of Fig. 1.

[0031] FIG. 6 is a schematic diagram showing a plasma source assembly according to another embodiment of the present invention.

[0032] Figure 7 is a schematic perspective view showing the plasma source assembly of Figure 6.

[0033] Figure 8 is a schematic diagram showing power delivery in the plasma source assembly of Figure 6.

[0034] FIG. 9 is a schematic cross-sectional view showing a substrate processing device according to another embodiment of the present invention.

[0035] FIG. 10 is a schematic cross-sectional view showing a substrate processing device according to another embodiment of the present invention.

[0036] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0037] The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. The following embodiments may be modified in various ways, and the scope of the present invention is not limited to the embodiments described below. Rather, these embodiments are provided to more faithfully and completely explain the present disclosure and to fully convey the spirit of the present invention to those skilled in the art.

[0038] Additionally, the thickness and size of each layer in the drawings are exaggerated for convenience and clarity of explanation. Furthermore, the embodiments of the present invention should not be construed as limited to the specific shapes of the regions illustrated in this specification, and should include, for example, changes in shape resulting from manufacturing processes.

[0039] FIG. 1 is a schematic diagram showing a plasma source assembly (100) according to one embodiment of the present invention, and FIG. 2 is a schematic diagram showing power transmission in the plasma source assembly (100) of FIG. 1.

[0040] Referring to FIGS. 1 and 2, the plasma source assembly (100) may include a reaction body (110), a plurality of magnetic cores (120a, 120b, 120c), a plurality of windings (124a, 124b, 124c), and a plurality of switches (SW1, SW2, SW3).

[0041] The reaction body (110) may include a plurality of body parts (112a, 112b, 112c) and a plurality of insulating parts (116). The body parts (112a, 112b, 112c) may have gas diffusion spaces (114a, 114b, 114c) formed therein, respectively. More specifically, the body part (112a) may have a gas diffusion space (114a) formed therein, the body part (112b) may have a gas diffusion space (114b) formed therein, and the body part (112c) may have a gas diffusion space (114c) formed therein. The cross-sectional shapes of the gas diffusion spaces (114a, 114b, 114c) may have various shapes, such as a circle, an ellipse, and a polygon.

[0042] In some embodiments, the body portions (112a, 112b, 112c) may be formed by coating an insulating material on a conductive material. For example, the body portions (112a, 112b, 112c) may be formed by coating an insulating material, such as a metal oxide or metal nitride, on a metal.

[0043] Insulating members (116) may be coupled between the body members (112a, 112b, 112c). The insulating members (116) may be interposed between the body members (112a, 112b, 112c) so that the body members (112a, 112b, 112c) are not directly electrically connected to each other but are spaced apart from each other. For example, the insulating members (116) may have a flow path (not shown) formed therein so that the gas diffusion spaces (114a, 114b, 114c) within the body members (112a, 112b, 112c) communicate with each other. The insulating members (116) may be formed of a suitable insulating material, such as an oxide, a nitride, a polymer resin, or the like.

[0044] In some embodiments, in the reaction body (110), the gas diffusion spaces (114a, 114b, 114c) may form a toroidal channel (114) as a whole. More specifically, the body portions (112a, 112b, 112c) may be formed to correspond to structures that are formed by carving out the overall shape of the toroidal channel (114) so ​​as to define the toroidal channel (114) as a whole. For example, when the toroidal channel (114) is formed as a donut shape as a whole, the body portions (112a, 112b, 112c) may be formed to correspond to structures that are formed by dividing the donut shape into multiple pieces.

[0045] In some embodiments, the reaction body (110) may be formed with a gas inlet (not shown) for introducing gas into the toroidal flow path (114) and a gas outlet (not shown) for discharging gas.

[0046] The magnetic cores (120a, 120b, 120c) may be spaced apart from each other along the toroidal channel (114) while each surrounding the reaction body (110). For example, the magnetic cores (120a, 120b, 120c) may be respectively disposed on the body portions (112a, 112b, 112c). More specifically, the magnetic core (120a) may be disposed to surround the outer circumference of the body portion (112a), the magnetic core (120b) may be disposed to surround the outer circumference of the body portion (112b), and the magnetic core (120c) may be disposed to surround the outer circumference of the body portion (112c). For example, the magnetic cores (120a, 120b, 120c) may include a magnetic material, such as a ferrite material.

[0047] In some embodiments, each of the magnetic cores (120a, 120b, 120c) may be formed as a single closed structure or may have a structure in which multiple segments are combined.

[0048] The windings (124a, 124b, 124c) may be arranged to wind the magnetic cores (120a, 120b, 120c). For example, the winding (124a) may be arranged to wind the magnetic core (120a), the winding (124b) may be arranged to wind the magnetic core (120b), and the winding (124c) may be arranged to wind the magnetic core (120c).

[0049] The windings (124a, 124b, 124c) can receive power from the power supply (130) and induce a magnetic force within the magnetic cores (120a, 120b, 120c). For example, when the windings (124a, 124b, 124c) are wound in the width direction of the magnetic cores (120a, 120b, 120c), when power is applied to the windings (124a, 124b, 124c), a magnetic force can be induced within the magnetic cores (120a, 120b, 120c) along the circumferential direction thereof.

[0050] The power supply unit (130) may include a power supply device and supply RF power to the windings (124a, 124b, 124c) via a resonant circuit unit (not shown). For example, the power supply unit (130) may include a switching mode power supply (SMPS).

[0051] A plurality of switches (SW1, SW2, SW3) may be respectively connected between two adjacent body parts (112a, 112b, 112c) such that the body parts (112a, 112b, 112c) are electrically connected or electrically disconnected by bypassing the insulating parts (116). For example, a switch (SW1) may be connected between the ends of two adjacent body parts (112a, 112b), a switch (SW2) may be connected between the ends of two adjacent body parts (112b, 112c), and a switch (SW3) may be connected between the ends of two adjacent body parts (112c, 112a).

[0052] The switches (SW1, SW2, SW3) may have various structures that can control turning on or off electrical connections. For example, the switches (SW1, SW2, SW3) may include transistors that form electrical channels according to a control signal.

[0053] In the plasma source assembly (100), the number of body parts (112a, 112b, 112c) is shown as an example and may be selected as two or more. Furthermore, depending on the number of body parts (112a, 112b, 112c), the number of magnetic cores (120a, 120b, 120c), windings (124a, 124b, 124c), insulators (116), and switches (SW1, SW2, SW3) may vary.

[0054] According to the plasma source assembly (100), when power is applied from the power supply unit (130) to the windings (124a, 124b, 124c), a magnetic force is induced in the magnetic cores (120a, 120b, 120c), and a current can be induced in the toroidal channel (114) penetrating the inside of the magnetic cores (120a, 120b, 120c) by this induced magnetic force. By this current, a gas can be activated in the toroidal channel (114), thereby forming a plasma atmosphere.

[0055] In the plasma source assembly (100), a magnetic force is induced in the magnetic cores (120a, 120b, 120c) from the current flowing in the windings (124a, 124b, 124c), and the structure in which a current is induced in the toroidal channel (114) by this induced magnetic force may correspond to the principle of a transformer. In this respect, the plasma source assembly (100) may also be called a transformer coupled plasma (TCP) device or a magnetic induction plasma device.

[0056] In some embodiments, in the transformer structure, the windings (124a, 124b, 124c) may function as a primary coil, and the toroidal channel (114) defined by the body portions (112a, 112b, 112c) may function as a secondary coil. In this respect, the windings (124a, 124b, 124c) may be referred to as a primary coil or primary winding, and the current flowing in the windings (124a, 124b, 124c) may be referred to as a primary current. Furthermore, the current induced in the toroidal channel (114) may also be referred to as a secondary current.

[0057] When generating plasma through the plasma source assembly (100), the control may be different in the ignition step and the maintenance step for generating plasma. For example, high power or a high electric field may be required in the ignition step. The control unit (150) may control the formation of plasma within the toroidal channel (114) by controlling the power supply unit (130) and / or the switches (SW1, SW2, SW3).

[0058] When a secondary current is induced in the toroidal channel (114), the voltage can be applied mostly to both ends of the insulating portions (116). Therefore, plasma ignition in the toroidal channel (114) can be initiated within the insulating portions (116). When all of the switches (SW1, SW2, SW3) are turned off, the total voltage during plasma ignition can be equally divided into 1 / 3 between the insulating portions (116). In this respect, control of the switches (SW1, SW2, SW3) can affect the magnitude of the voltage applied between the insulating portions (116).

[0059] For example, the control unit (150) can control at least one of the switches (SW1, SW2, SW3) to be turned on when the plasma in the toroidal channel (114) is ignited. In this case, there is no voltage drop between the insulating parts (116) corresponding to the turned-on switches among the switches (SW1, SW2, SW3), so that the voltage applied to the insulating parts (116) corresponding to the turned-off switches can increase.

[0060] During plasma ignition, it may be advantageous to apply a large voltage to one or more insulating sections (116) rather than to distribute the voltage evenly across all insulating sections (116). For example, the success rate of plasma ignition may be increased by applying the full voltage to only one insulating section (160) or by applying half of the full voltage to each of two insulating sections (116).

[0061] In some embodiments, the control unit (150) can control the switches (SW1, SW2, SW3) so that the number of turns-off of the switches (SW1, SW2, SW3) when the plasma in the toroidal channel (114) is maintained after ignition is greater than the number of turns-off of the switches (SW1, SW2, SW3) when the plasma is ignited. Accordingly, when the plasma is ignited, a relatively high voltage can be applied between some of the insulators (116), and when the plasma is maintained, the voltage can be applied more evenly between the insulators (116). For example, when the plasma is maintained, the control unit (150) can control all of the switches (SW1, SW2, SW3) to be turned off by turning off at least one switch that was turned on when the plasma was ignited among the switches (SW1, SW2, SW3).

[0062] In some embodiments, the control unit (150) may, when the plasma is ignited, keep only one of the switches (SW1, SW2, SW3) turned off and turn on the remaining switches, and when the plasma is maintained, turn off the remaining switches that were turned on when the plasma was ignited so that all of the switches (SW1, SW2, SW3) are turned off. In this case, when the plasma is ignited, the entire voltage within the toroidal channel (114) may be applied between one insulation portion (116). This control may enable local plasma ignition within the toroidal channel (114) when plasma ignition is difficult.

[0063] In some embodiments, the control unit (150) may perform a turn-on operation by selecting at least one switch among the switches (SW1, SW2, SW3) each time ignition of the plasma within the toroidal channel (114) is performed. For example, when the control unit (150) wants to repeatedly process a process using the plasma source assembly (100), the control unit (150) may change the plasma ignition position each time by changing at least one switch among the switches (SW1, SW2, SW3) controlled to a turn-on state for each process cycle unit. Here, the process cycle unit may be distinguished based on whether plasma ignition is newly required within one process or in multiple processes.

[0064] Accordingly, when the plasma source assembly (100) is repeatedly used, it is possible to prevent voltage from being concentrated only on specific areas within the body parts (112a, 112b, 112c) and causing concentrated damage to specific areas. Accordingly, damage to components of the plasma source assembly (100) can be reduced, thereby increasing maintenance time and improving operational efficiency.

[0065] Below, a plasma forming method using a plasma source assembly (100) is described in more detail.

[0066] Referring to FIGS. 1 to 5 together, a plasma forming method using a plasma source assembly (100) may include an ignition step (S10) of applying power to windings (124a, 124b, 124c) from a power supply unit (130), turning on at least one of the switches (SW1, SW2, SW3), and igniting plasma in a toroidal channel (114), and a maintenance step (S20) of maintaining plasma in the toroidal channel (114).

[0067] For example, as illustrated in FIG. 3, in the ignition step (S10), the control unit (150) can turn on the switches (SW1, SW3) and control the selected switch (SW2) to be turned off. In this case, the total voltage (V) applied within the toroidal channel (114) G ) is applied between the insulating portions (116) corresponding to the switches (SW2), and plasma ignition can be initiated at this portion. Furthermore, process gas can be supplied into the toroidal channel (114) in the ignition step (S10).

[0068] As illustrated in FIG. 4, in the maintenance step (S20), the control unit (150) can control all switches (SW1, SW2, SW3) to be turned off by changing the switches (SW1, SW3) turned on in the ignition step (S10) back to the turn-off state. Accordingly, the plasma in the toroidal channel (114) can be maintained as a whole. Furthermore, in the maintenance step (S20), process gas can be continuously supplied into the toroidal channel (114), activated by the plasma, and discharged to the outside.

[0069] Meanwhile, in some embodiments, in the ignition step (S10), the control unit (150) may turn on only one of the switches (SW1, SW2, SW3) and keep the other two switches in a turned-off state.

[0070] According to the plasma source assembly (100) and the plasma forming method using the same, the ignition efficiency can be controlled by controlling the switches (SW1, SW2, SW3) during plasma ignition to adjust the voltage distribution within the toroidal channel (114). Therefore, the plasma ignition success rate within the toroidal channel (114) can be improved by controlling the switches (SW1, SW2, SW3) differently depending on the type of process gas, the voltage of the power supply (130), the size of the plasma source assembly (100), etc.

[0071] FIG. 6 is a schematic diagram showing a plasma source assembly (200) according to another embodiment of the present invention, FIG. 7 is a schematic perspective view showing the plasma source assembly (200) of FIG. 6, and FIG. 8 is a schematic diagram showing power transmission in the plasma source assembly (200) of FIG. 6. The plasma source assembly (200) is obtained by modifying or adding some components to the plasma source assembly (100) of FIGS. 1 to 4 described above, and since the two embodiments can be referenced to each other, redundant descriptions are omitted.

[0072] Referring to FIGS. 6 to 8, the plasma source assembly (200) may include a reaction body (210), a plurality of magnetic cores (220a, 220b, 220c), a plurality of windings (224a, 224b, 224c), and a plurality of switches (SW1, SW2, SW3). In the plasma source assembly (200), the reaction body (210), the magnetic cores (220a, 220b, 220c), and the windings (224a, 224b, 224c) may correspond to the reaction body (110), the magnetic cores (120a, 120b, 120c), and the windings (124a, 124b, 124c) in the plasma source assembly (100), and may be referenced to each other for detailed main configurations.

[0073] The reaction body (210) may include a plurality of body parts (212a, 212b, 212c) and a plurality of insulating parts (216). The body parts (212a, 212b, 212c) may have gas diffusion spaces (214a, 214b, 214c) formed therein, respectively. The insulating parts (216) may be coupled between the body parts (212a, 212b, 212c). In the reaction body (210), the body parts (212a, 212b, 212c) may be arranged such that the gas diffusion spaces (214a, 214b, 214c) form a toroidal channel (214) as a whole.

[0074] Insulating parts (216) may be interposed between the body parts (212a, 212b, 212c) so that the body parts are not directly electrically connected to each other but are spaced apart from each other. The insulating parts (216) may have a flow path (not shown) formed therein so that the gas diffusion spaces (214a, 214b, 214c) within the body parts (212a, 212b, 212c) communicate with each other.

[0075] The body parts (212a, 212b, 212c) may each include first body parts (2121a, 2121b, 2121c) and second body parts (2122a, 2122b, 2122c). For example, the body part (212a) may include a first body part (2121a) and a second body part (2122a) that are coupled to each other, the body part (212b) may include a first body part (2121b) and a second body part (2122b) that are coupled to each other, and the body part (212c) may include a first body part (2121c) and a second body part (2122c) that are coupled to each other.

[0076] In some embodiments, the first body portions (2121a, 2121b, 2121c) may have a first length and a second width, and the second body portions (2122a, 2122b, 2122c) may have a second length and a second width. The first length may be greater than the second length, and the first width may be greater than the second width. For example, the first length may be at least three times greater than the second length, and the first width may be 1.1 to 1.4 times greater than the second width.

[0077] In some embodiments, flanges (2126, 2127) may be coupled to opposite ends of the second body parts (2122a, 2122b, 2122c). For example, one end of the first body parts (2121a, 2121b, 2121c) may be coupled to the flanges (2127) of one end of the second body parts (2122a, 2122b, 2122c), respectively, and insulating parts (216) may be coupled between the flanges (2126) of the other end of the second body parts (2122a, 2122b, 2122c) and the other end of the first body parts (2121a, 2121b, 2121c), respectively.

[0078] In the reaction body (210), the gas diffusion spaces (214a, 214b, 214c) can be connected to each other with the flow paths in the flanges (2126, 2127) and the insulation parts (216) so that the toroidal channel (214) is formed throughout the reaction body (210).

[0079] In some embodiments, at least one gas inlet (2123) may be formed on the upper surface (A1) of the first body parts (2121a, 2121b, 2121c), and at least one gas outlet (2124) may be formed on the lower surface (A2) of the first body parts (2121a, 2121b, 2121c). Gas introduced into the toroidal channel (214) through the gas inlet (2123) may be activated by plasma and discharged to the lower portion of the plasma source assembly (200) through the gas outlet (2124). For example, the gas outlet (2124) may be formed in a slit shape.

[0080] In some embodiments, the gas inlet (2123) may be formed on a side of the first body portions (2121a, 2121b, 2121c).

[0081] In some embodiments, a cooling conduit (2125) for cooling the reaction body (210) may be formed inside the body parts (212a, 212b, 212c), and a cooling fluid may be circulated through the cooling conduit (2125).

[0082] The magnetic cores (220a, 220b, 220c) may be spaced apart from each other along the toroidal channel (214) while each surrounding the reaction body (210). For example, the magnetic cores (220a, 220b, 220c) may be respectively disposed on the body parts (212a, 212b, 212c). More specifically, the magnetic cores (220a, 220b, 220c) may be disposed to surround the second body parts (2122a, 2122b, 2122c) of the body parts (212a, 212b, 212c).

[0083] The windings (224a, 224b, 224c) can be arranged to wind the magnetic cores (220a, 220b, 220c). The windings (224a, 224b, 224c) can receive power from the power supply (230) and induce a magnetic force within the magnetic cores (220a, 220b, 220c). For example, when the windings (224a, 224b, 224c) are wound in the cross-sectional direction of the magnetic cores (220a, 220b, 220c), when power is applied to the windings (224a, 224b, 224c), a magnetic force can be induced within the magnetic cores (220a, 220b, 220c) along the circumferential direction thereof.

[0084] A plurality of switches (SW1, SW2, SW3) may be connected between two adjacent body parts (212a, 212b, 212c) such that the body parts (212a, 212b, 212c) are electrically connected or electrically insulated by bypassing the insulating parts (216).

[0085] The control unit (250) can control at least one of the switches (SW1, SW2, SW3) to be turned on when the plasma in the toroidal channel (214) is ignited. In some embodiments, the control unit (250) can control the switches (SW1, SW2, SW3) so that the number of turns-off of the switches (SW1, SW2, SW3) when the plasma in the toroidal channel (214) is maintained after ignition is greater than the number of turns-off of the switches (SW1, SW2, SW3) when the plasma is ignited.

[0086] In some embodiments, the control unit (250) may keep only one of the switches (SW1, SW2, SW3) in a turned-off state when the plasma is ignited and turn on the remaining switches, and may turn off the remaining switches that were turned on when the plasma was ignited so that all of the switches (SW1, SW2, SW3) are turned off when the plasma is maintained.

[0087] In some embodiments, the control unit (250) may perform a turn-on operation by selecting at least one switch among the switches (SW1, SW2, SW3) whenever ignition of the plasma within the toroidal channel (214) is performed.

[0088] The operation of the plasma source assembly (200) may refer to the description of the plasma source assembly (100). For example, according to the plasma source assembly (200), when power is applied from the power supply unit (230) to the windings (224a, 224b, 224c), a magnetic force is induced in the magnetic cores (220a, 220b, 220c), and a current may be induced in the toroidal channel (214) by this induced magnetic force. By this current, a gas supplied into the toroidal channel (214) through the gas inlet (2123) may be activated, thereby forming a plasma atmosphere.

[0089] Furthermore, the control unit (250) can control the formation of plasma within the toroidal channel (214) by controlling the power supply unit (230) and / or the switches (SW1, SW2, SW3). For example, the control unit (150) can control at least one of the switches (SW1, SW2, SW3) to be turned on when the plasma within the toroidal channel (114) is ignited.

[0090] A method for forming a plasma using a plasma source assembly (200) may include an ignition step (S10) of applying power to windings (224a, 224b, 224c) from a power supply unit (230), turning on at least one of the switches (SW1, SW2, SW3), and igniting plasma in a toroidal channel (214), and a maintenance step (S20) of maintaining plasma in the toroidal channel (214).

[0091] FIG. 9 is a schematic cross-sectional view showing a substrate processing device (300) according to further embodiments of the present invention.

[0092] Referring to FIG. 9, the substrate processing device (300) may include a process chamber (310), a gas injection unit (320), a substrate support unit (330), and at least one plasma source assembly (350).

[0093] The process chamber (310) may have a reaction space (312) formed therein. The process chamber (310) may include a top lid (311) at the top to seal the interior. The process chamber (310) may be connected to a vacuum pump (318) through an exhaust port (314) to form a vacuum atmosphere. Furthermore, the process chamber (310) may include an entrance for loading a substrate (S) into or unloading the substrate (S) from the reaction space (312) and a gate (not shown) for opening and closing the entrance.

[0094] The gas injection unit (320) may be coupled to the process chamber (310) to inject process gas supplied from the outside of the process chamber (310) into the reaction space (312). For example, the gas injection unit (320) may be coupled to the upper portion of the process chamber (310) so as to face the substrate support unit (330). The gas injection unit (320) may supply process gas, such as a source gas, a reaction gas, an inert gas, etc., onto the substrate (S) within the reaction space (312).

[0095] In some embodiments, the gas injection unit (320) may be understood as a structure coupled to the process chamber (310) or may be understood as a structure coupled to the top lid (311).

[0096] The plasma source assembly (350) is for activating a process gas supplied from the outside and may be any one of the plasma source assemblies (100, 200) described above. The plasma source assembly (350) may be coupled to the process chamber (310) facing the substrate support (330). For example, the plasma source assembly (350) may be coupled to the top lid (311) with an insulating member (345) interposed therebetween. The plasma source assembly (350) may supply an activated process gas, such as radicals, to a lower portion thereof, for example, an internal space of the gas injection unit (320).

[0097] In some embodiments, the gas injection unit (320) may include a distribution plate (324) for injecting an activated process gas supplied from the plasma source assembly (350) into the reaction space (312). A plurality of injection holes may be formed in the distribution plate (324) in a vertical direction. Optionally, the gas injection unit (320) may further include a middle plate, such as a blocker plate, for injecting gas between the top lid (311) and the distribution plate (324).

[0098] In some embodiments, the gas injection unit (320) may further include a separate gas inlet to supply process gas into the interior thereof without passing through the plasma source assembly (350). In this case, the gas injection unit (320) may supply process gas activated through the plasma source assembly (350) and process gas inactivated without passing through the plasma source assembly (350) together.

[0099] The substrate support (330) may be coupled to the process chamber (310) to support the substrate (S) within the reaction space (312). For example, the substrate support (330) may be installed in the process chamber (310) facing the gas injection unit (320). Furthermore, the substrate support (330) may include a heater (not shown) for heating the substrates (S) therein. Since the substrate support (330) is configured to place the substrate (S) thereon, it may also be called a substrate mounting unit, a susceptor, a substrate holder, etc.

[0100] The shape of the upper plate of the substrate support member (330) generally corresponds to the shape of the substrate (S), but is not limited thereto, and may be provided in various shapes so as to stably secure the substrate (S). Furthermore, a shaft (335) is connected to the upper plate of the substrate support member (330), and the shaft (335) may be connected to an external motor (not shown) so as to be able to rise and fall. Optionally, a means for maintaining airtightness, such as a bellows tube, may be connected between the shaft (335) and the process chamber (310).

[0101] In some embodiments, the substrate support (330) may further include an electrostatic electrode (not shown) to apply an electrostatic force to the substrate (S) and secure it thereon. In this case, the electrostatic electrode may generate an electrostatic force using DC power.

[0102] Fig. 10 is a schematic cross-sectional view showing a substrate processing device (300a) according to further embodiments of the present invention. The substrate processing device (300a) is obtained by adding or modifying some components from the substrate processing device (300) of Fig. 9, and since the two embodiments can be referenced to each other, any overlapping descriptions will be omitted.

[0103] Referring to FIG. 10, in the substrate processing device (300a), the plasma source assembly (350a) may include a first plasma source assembly (350a1) and a second plasma source assembly (350a2). The first plasma source assembly (350a1) and the second plasma source assembly (350a2) may be the same as any one of the plasma source assemblies (100, 200) described above.

[0104] In some embodiments, the second plasma source assembly (350a2) may be arranged to surround the first plasma source assembly (350a1). For example, the first plasma source assembly (350a1) may be arranged in a donut shape on the center portion of the top lid (311), and the second plasma source assembly (350a2) may be arranged on the edge portion of the top lid (311) in a donut shape with a larger diameter that surrounds the donut structure of the first plasma source assembly (350a1). This plasma source assembly (350a) enables the activated process gas to be injected throughout the center and edge portions of the gas injection unit (320).

[0105] The substrate processing devices (300, 300a) described above can be used as a thin film deposition device, such as an atomic layer deposition (ALD) device or a chemical vapor deposition (CVD) device.

[0106] According to the substrate processing devices (300, 300a), since the plasma source assemblies (350, 350a) are directly connected to the gas injection units (320), the activated process gas, e.g., radicals, can be directly supplied to the substrate (S), thereby reducing the supply path of the radicals. Accordingly, when the plasma source assemblies (350, 350a) are used, the recombination of radicals can be reduced compared to when a conventional remote plasma device is used, thereby increasing the supply efficiency of radicals and thus enhancing process reliability.

[0107] According to the substrate processing devices (300, 300a), when plasma is formed in the plasma source assemblies (350, 350a), at least one switch controlled to a turn-on state among the switches (SW1, SW2, SW3) in the plasma source assemblies (350, 350a) can be changed for each process cycle unit for processing the substrate (S) in the reaction space (312) to change the plasma ignition position in the reaction body (110, 210). Accordingly, damage to components in the plasma source assemblies (350, 350a) can be reduced, so that the maintenance period of the substrate processing devices (300, 300a) can be extended, thereby improving the operating efficiency thereof.

[0108] While the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely exemplary, and those skilled in the art will appreciate that various modifications and equivalent alternative embodiments are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. A reaction body comprising a plurality of body parts each having gas diffusion spaces formed therein, and a plurality of insulating parts coupled so that the gas diffusion spaces are in communication with each other between the plurality of body parts, wherein the gas diffusion spaces within the plurality of body parts form a toroidal channel overall; A plurality of magnetic cores spaced apart from each other along the toroidal channel, each surrounding the above reaction body; A plurality of windings arranged to wind the plurality of magnetic cores and inducing a magnetic force within the plurality of magnetic cores by receiving power from a power supply unit; A plurality of switches each connected between the ends of two adjacent body parts of the plurality of body parts so that the plurality of body parts are electrically connected or electrically cut off by bypassing the plurality of insulating parts; and A control unit that controls the formation of plasma within the toroidal channel by controlling the power supply and the plurality of switches, and controls at least one of the plurality of switches to be turned on when the plasma within the toroidal channel is ignited. Plasma source assembly.

2. In paragraph 1, A plasma source assembly, wherein the control unit controls the plurality of switches by turning off the at least one switch when the plasma in the toroidal channel is maintained after ignition, thereby controlling all of the plurality of switches to a turned-off state.

3. In paragraph 1, A plasma source assembly, wherein the control unit selects at least one switch among the plurality of switches to perform a turn-on operation whenever ignition of the plasma within the toroidal channel is performed.

4. In paragraph 1, The above control unit, When the plasma is ignited, only one of the plurality of switches is turned off and the remaining switches are turned on. When the plasma is maintained, the remaining switches that were turned on when the plasma was ignited are turned off again so that all of the plurality of switches are turned off. Plasma source assembly.

5. In paragraph 1, The above plurality of body parts each include first body parts having a first length and a first width and second body parts having a second length and a second width, The above first length is greater than the above second length, The above first width is larger than the above second width, The above plurality of magnetic cores are arranged to surround the second body parts, Plasma source assembly.

6. In paragraph 5, Flanges are attached to both ends of the above second body parts, One side of the first body parts is connected to the flanges on one side of the second body parts, respectively. The plurality of insulating parts are respectively joined between the flanges on the other side of the second body parts and the other side of the first body parts. Plasma source assembly.

7. In paragraph 5, At least one gas inlet is formed on the upper surface or side surface of the first body parts, At least one gas outlet is formed on the lower surface of the first body parts, Plasma source assembly.

8. A process chamber with a reaction space formed inside; A substrate support coupled to the process chamber to support the substrate within the reaction space; at least one plasma source assembly coupled to the process chamber so as to face the substrate support, according to any one of claims 1 to 7; and A gas injection unit coupled with the plasma source assembly to inject a process gas activated by the plasma source assembly into the reaction space, Substrate processing device.

9. In paragraph 8, The at least one plasma source assembly comprises a first plasma source assembly and a second plasma source assembly arranged to surround the first plasma source assembly. Substrate processing device.

10. In paragraph 8, The at least one plasma source assembly changes the plasma ignition position within the reaction body by changing the at least one switch among the plurality of switches controlled to a turn-on state for each process cycle unit for processing the substrate within the reaction space. , substrate processing equipment.

11. A method for forming plasma using the plasma source assembly of Article 1, An ignition step of applying power to the plurality of windings from the power supply, turning on at least one of the plurality of switches, and igniting plasma in the toroidal channel; and Comprising a maintenance step for maintaining the plasma within the toroidal channel; Method for forming plasma.

12. In paragraph 11, A plasma forming method, wherein in the above maintenance step, the control unit turns off at least one switch that is turned on when the plasma is ignited, thereby controlling all of the plurality of switches to be turned off.

13. In paragraph 11, In the above ignition step, only one of the plurality of switches is kept in a turned-off state and the remaining switches are turned on, In the above maintenance step, the remaining switches that were turned on when the plasma was ignited are turned off again so that all of the plurality of switches are turned off. Method for forming plasma.

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