Control method, apparatus, computer device and storage medium

Abstract

The present application relates to a control method, an apparatus, a computer device and a storage medium. The method comprises: acquiring a test current of a valve tower test circuit; and on the basis of the test current and a preset reference current, determining a modulation wave for each sub-module of a target valve tower in the valve tower test circuit, so as to control each sub-module in the valve tower test circuit on the basis of the modulation wave. By using the method, each sub-module in a valve tower test circuit can be controlled during a test.

Description

Control method, device, computer equipment and storage medium Related applications

[0001] This application claims priority to Chinese patent application number 2023115983796, filed on November 27, 2023, entitled “Control Method, Device, Computer Equipment and Storage Medium,” the entire text of which is incorporated herein by reference. Technical Field

[0002] The present application relates to the field of energy storage technology, and in particular to a control method, device, computer equipment, and storage medium. Background Art

[0003] Energy storage systems are of great research significance for new power systems based on new energy sources. Energy storage systems consist of multiple submodules, each of which includes a power unit and a battery unit.

[0004] Before an energy storage system is commissioned, it is necessary to test the submodules of the valve tower under test using a companion valve tower in the valve tower test circuit. During this testing process, it is necessary to simulate the current, voltage, and other parameters of the submodules in the test valve tower under actual operating conditions. Therefore, how to control the submodules in the valve tower test circuit during the test process has become a key research topic for researchers in this field. Summary of the Invention

[0005] Based on this, it is necessary to provide a control method, device, computer equipment and storage medium that can control each sub-module in the valve tower test circuit during the test process to address the above technical problems.

[0006] In a first aspect, the present application provides a control method, comprising:

[0007] Obtain the test current of the valve tower test circuit;

[0008] Determine the modulation wave of each submodule of the target valve tower in the valve tower test circuit according to the test current and the preset reference current;

[0009] Each submodule in the valve tower test circuit is controlled according to the modulation wave.

[0010] In the above control method, the test current of the valve tower test circuit is obtained. Based on the test current and a preset reference current, the modulation wave of each submodule of the target valve tower in the valve tower test circuit is determined. Therefore, the modulation wave determined for each submodule can gradually bring the test current of the valve tower test circuit closer to the preset reference current, thereby improving the accuracy of the test process. Furthermore, by controlling each submodule in the valve tower test circuit according to the modulation wave, the valve tower test circuit can be controlled during the test process to verify the reliability of the submodule.

[0011] In one embodiment, determining the modulation wave of each submodule of the target valve tower in the valve tower test circuit according to the test current and the preset reference current includes:

[0012] determining a first difference between the amplitude of the test current and the amplitude of a preset reference current;

[0013] Determining a basic offset of each submodule in the target valve tower according to the first difference, the direction of the test current, and a preset duty cycle of the target valve tower;

[0014] According to the basic offset of each submodule in the target valve tower, the modulation wave of each submodule of the target valve tower is determined.

[0015] In the above embodiment, by determining a first difference between the amplitude of the test current and the amplitude of the preset reference current, and determining the base offset of each submodule in the target valve tower based on the first difference, the direction of the test current, and the preset duty cycle of the target valve tower, and then determining the modulation wave of each submodule in the target valve tower based on the base offset of each submodule in the target valve tower, the modulation wave of each submodule in the target valve tower can be accurately determined. In this way, after controlling each submodule in the valve tower test circuit according to the modulation wave, the test current of the valve tower test circuit gradually approaches the preset reference current.

[0016] In one embodiment, determining the modulation wave of each submodule of the target valve tower according to the basic offset of each submodule in the target valve tower includes:

[0017] For each submodule in the target valve tower, determine the offset to be adjusted of the submodule according to the direction of the test current and the charge state of the submodule;

[0018] The modulation wave of the submodule is determined according to the basic offset and the offset to be adjusted of the submodule.

[0019] In the above embodiment, for each sub-module in the target valve tower, the offset to be adjusted of the sub-module is determined according to the direction of the test current and the charge state of the sub-module, and then the modulation wave of the sub-module is determined according to the basic offset and the offset to be adjusted of the sub-module. Therefore, the modulation wave of each sub-module takes the charge state of the sub-module into consideration, which is beneficial to the homogenization of the SOC between different sub-modules of the same valve tower.

[0020] In one embodiment, determining the offset to be adjusted of the submodule according to the direction of the test current and the charge state of the submodule includes:

[0021] Determine the average state of charge of each submodule in the target valve tower;

[0022] determining a second difference between the average value and the state of charge of the submodule;

[0023] The offset to be adjusted of the submodule is determined according to the second difference and the direction of the test current.

[0024] In the above embodiment, the average state of charge of each submodule in the target valve tower is determined, and a second difference between the average and the submodule's state of charge is determined, so that the submodule's offset to be adjusted is determined based on the second difference and the direction of the test current. In this way, the submodule's offset to be adjusted can reflect the difference between the SOC of the submodule and the SOCs of other submodules in the same valve tower, facilitating SOC uniformity among different submodules in the same valve tower, and thus facilitating charge balance among different submodules in the same valve tower.

[0025] In one embodiment, determining the offset to be adjusted of the submodule according to the second difference and the direction of the test current includes:

[0026] Processing the second difference to obtain a first result;

[0027] If the direction of the test current is the first direction, the negative value of the first result is used as the offset to be adjusted of the submodule; the first direction is used to instruct the accompanying test valve tower in the valve tower test circuit to charge the tested valve tower in the valve tower test circuit;

[0028] If the direction of the test current is the second direction, the first result is used as the offset to be adjusted of the submodule; the second direction is used to instruct the tested valve tower in the valve tower test circuit to charge the accompanying valve tower in the valve tower test circuit.

[0029] In the above embodiment, since the first direction is used to instruct the accompanying test valve tower in the valve tower test circuit to charge the tested valve tower in the valve tower test circuit, and the first direction is used to instruct the tested valve tower in the valve tower test circuit to charge the accompanying test valve tower in the valve tower test circuit, after processing the second difference to obtain the first result, if the direction of the test current is the first direction, the negative value of the first result is used as the offset to be adjusted for the submodule, and if the direction of the test current is the second direction, the first result is used as the offset to be adjusted for the submodule. In this way, the offset to be adjusted for the submodule is determined based on the second difference and the direction of the test current. On the one hand, the determined offset to be adjusted can distinguish the charging and discharging conditions in the valve tower test circuit, and on the other hand, the SOC of each submodule in the same valve tower can be considered in the process of determining the offset to be adjusted.

[0030] In one embodiment, determining a base offset of each submodule in the target valve tower according to the first difference, the direction of the test current, and a preset duty cycle of the target valve tower includes:

[0031] Processing the first difference to obtain a second result;

[0032] If the direction of the test current is the first direction, the negative value of the product of the second result and the preset duty cycle is used as the basic offset;

[0033] If the direction of the test current is the second direction, the product of the second result and the preset duty cycle is used as the basic offset.

[0034] In the above embodiment, the first difference is processed to obtain a second result. When the test current is directed in the first direction, the negative value of the product of the second result and the preset duty cycle is used as the base offset. When the test current is directed in the second direction, the product of the second result and the preset duty cycle is used as the base offset. In this way, not only can the charge and discharge conditions in the valve tower test circuit be distinguished during the determination of the base offset, but the base offset of each submodule in the target valve tower can also be determined based on the first difference, the direction of the test current, and the preset duty cycle of the target valve tower.

[0035] In one embodiment, determining the modulation wave of each submodule of the target valve tower according to the basic offset of each submodule in the target valve tower includes:

[0036] For each submodule in the target valve tower, if the direction of the test current is the first direction, the modulation wave of the submodule is determined according to the difference between the basic offset and the offset to be adjusted of the submodule;

[0037] If the direction of the test current is the second direction, the modulation wave of the submodule is determined according to the sum of the basic offset and the offset to be adjusted.

[0038] In the above embodiment, for each submodule in the target valve tower, if the test current is directed in the first direction, the submodule's modulation wave is determined based on the difference between the base offset and the submodule's offset to be adjusted. If the test current is directed in the second direction, the submodule's modulation wave is determined based on the sum of the base offset and the offset to be adjusted. This allows the power levels of each submodule in the same valve tower to converge during operation, thereby improving the stability of the valve tower test circuit.

[0039] In one embodiment, each submodule in the valve tower test circuit is controlled according to the modulation wave, including:

[0040] When the target valve tower is the tested valve tower in the valve tower test circuit, each submodule in the accompanying test valve tower in the valve tower test circuit is charged according to the modulation wave of each submodule in the tested valve tower;

[0041] When the target valve tower is a companion test valve tower in the valve tower test circuit, each submodule in the tested valve tower in the valve tower test circuit is charged according to the modulation wave of each submodule in the companion test valve tower.

[0042] In the above embodiments, since the target valve tower is the tested valve tower in the valve tower test circuit, each sub-module in the accompanying valve tower in the valve tower test circuit can be charged according to the modulation wave of each sub-module in the tested valve tower; and since the target valve tower is the tested valve tower in the valve tower test circuit, each sub-module in the tested valve tower in the valve tower test circuit can be charged according to the modulation wave of each sub-module in the accompanying valve tower, the flexibility of the valve tower test circuit is improved.

[0043] In one embodiment, determining the modulation wave of each submodule of the target valve tower in the valve tower test circuit according to the test current and the preset reference current includes:

[0044] Determine the carrier phase shift of each submodule in the target valve tower according to the operating number and preset angle of each submodule in the target valve tower;

[0045] The modulation wave of each submodule of the target valve tower is determined according to the test current, the preset reference current and the carrier phase shift of each submodule in the target valve tower.

[0046] In the above embodiment, the carrier phase shift of each submodule in the target valve tower is determined based on the number of submodules in operation and the preset angle, and the modulation wave of each submodule in the target valve tower is determined based on the test current, the preset reference current, and the carrier phase shift of each submodule in the target valve tower. Therefore, the modulation wave of each submodule obtained by carrier phase shifting has high bandwidth utilization and strong anti-interference ability, thereby improving the quality of the modulation wave.

[0047] In a second aspect, the present application further provides a control device, comprising:

[0048] An acquisition module, used for acquiring a test current of a valve tower test circuit;

[0049] A determination module, configured to determine the modulation wave of each submodule of the target valve tower in the valve tower test circuit according to the test current and the preset reference current;

[0050] The control module is used to control each submodule in the valve tower test circuit according to the modulation wave.

[0051] In a third aspect, the present application further provides a computer device comprising a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of any of the above methods when executing the computer program.

[0052] In a fourth aspect, the present application further provides a computer-readable storage medium having a computer program stored thereon, which implements the steps of any of the above methods when executed by a processor.

[0053] In a fifth aspect, the present application also provides a computer program product, comprising a computer program, which implements the steps of any of the above methods when executed by a processor.

[0054] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiment below. The accompanying drawings are for illustration purposes only and are not to be considered as limiting the present application. The same reference numerals are used throughout the drawings to represent the same components. In the drawings:

[0056] FIG1 is a system architecture diagram of an energy storage system according to an embodiment of the present application;

[0057] FIG2 is a schematic diagram of the structure of a submodule in an embodiment of the present application;

[0058] FIG3 is a schematic structural diagram of another submodule in an embodiment of the present application;

[0059] FIG4 is an application environment diagram of the control method according to an embodiment of the present application;

[0060] FIG5 is a flow chart of a control method in an embodiment of the present application;

[0061] FIG6 is a schematic diagram of a flow chart of determining a modulation wave in an embodiment of the present application;

[0062] FIG7 is a schematic diagram of another process for determining a modulation wave in an embodiment of the present application;

[0063] FIG8 is a schematic diagram of a process for determining an offset to be adjusted according to an embodiment of the present application;

[0064] FIG9 is a schematic diagram of another process for determining the offset to be adjusted according to an embodiment of the present application;

[0065] FIG10 is a schematic diagram showing a principle for determining a first result in an embodiment of the present application;

[0066] FIG11 is a schematic diagram of a process for determining a basic offset in an embodiment of the present application;

[0067] FIG12 is a schematic diagram of another process for determining a modulated wave in an embodiment of the present application;

[0068] FIG13 is a schematic diagram of another process for determining a modulated wave in an embodiment of the present application;

[0069] FIG14 is a schematic diagram showing the principle of the control method in an embodiment of the present application;

[0070] FIG15 is a process diagram of a control method according to an embodiment of the present application;

[0071] FIG16 is a schematic diagram showing the results of a valve tower test circuit according to an embodiment of the present application;

[0072] FIG17 is a schematic diagram of an effect of an embodiment of the present application;

[0073] FIG18 is a schematic diagram of another effect in an embodiment of the present application;

[0074] FIG19 is a schematic diagram showing the effect of the test current in an embodiment of the present application;

[0075] FIG20 is a structural block diagram of a control and adjustment device according to an embodiment of the present application;

[0076] FIG21 is a structural block diagram of a determination module in an embodiment of the present application;

[0077] FIG22 is a structural block diagram of a third determination unit in an embodiment of the present application;

[0078] FIG23 is a structural block diagram of a second determination unit in an embodiment of the present application;

[0079] FIG24 is a diagram showing the internal structure of a computer device in an embodiment of the present application. DETAILED DESCRIPTION

[0080] The following embodiments of the technical solution of the present application will be described in detail with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application and are therefore only examples and are not intended to limit the scope of protection of the present application.

[0081] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned figure descriptions are intended to cover non-exclusive inclusions.

[0082] In the description of the embodiments of this application, the technical terms "first" and "second" are used only to distinguish different objects and should not be understood to indicate or imply relative importance or implicitly specify the quantity, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, the meaning of "plurality" is more than two, unless otherwise clearly and specifically defined.

[0083] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0084] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two (including two groups), and "multiple pieces" refers to more than two (including two) pieces.

[0085] FIG1 is a system architecture diagram of an energy storage system in an embodiment of the present application. As shown in FIG1, FIG1 shows a high-voltage direct-mounted energy storage system, which is configured in a DC transmission line, that is, between a positive DC output and a negative DC output. The high-voltage direct-mounted energy storage system includes a reactor and N submodules. N is an integer greater than or equal to 1, SM1 represents the first submodule, SM2 represents the second submodule, ..., SM N Indicates the Nth submodule, and so on.

[0086] In order to explain the high-voltage direct-mounted energy storage system in this application more clearly, it is described here with reference to Figures 2 and 3. Figures 2 and 3 are schematic structural diagrams of submodules in an embodiment of this application.

[0087] Figure 2 shows a submodule of a half-bridge. As shown in Figure 2, the submodule in Figure 1 may include a power unit 201 and a battery unit 202. The power unit 201 includes a switch 203, a transistor 204, a transistor 205, a capacitor 206, and a resistor 207. The battery unit 202 includes a battery pack 208.

[0088] Switch 203 controls whether power unit 201 is connected to or disconnected from the energy storage system. Transistors 204 and 205 control the charging and discharging of their corresponding submodules. For example, when transistor 204 is on and transistor 205 is off, battery unit 202 charges; when transistor 204 is on and transistor 205 is off, battery unit 202 discharges. Capacitor 206 supports and stabilizes the voltage of power unit 201. Resistor 207 balances the voltage of capacitor 206 in power unit 201. Battery pack 215 provides energy support for the energy storage system.

[0089] Figure 3 shows a full-bridge submodule. As shown in Figure 3, the submodule in Figure 1 may also include a power unit 301 and a battery unit 302. Power unit 301 includes a switch 303, a transistor 304, a transistor 305, a transistor 306, a transistor 307, a capacitor 308, and a resistor 309. Battery unit 302 includes a battery pack 310. When transistors 304 and 305 are on and transistors 306 and 307 are off, battery unit 202 is charged; when transistors 304 and 305 are off and transistors 306 and 307 are on, battery unit 202 is discharged. The principles of the submodule in Figure 3 are similar to those in Figure 2 and will not be repeated here.

[0090] Compared with traditional energy storage systems, the high-voltage, large-capacity energy storage system shown in Figure 1 offers the following three key advantages. First, it can enhance the grid regulation capabilities of the flexible DC transmission system, thereby playing a positive role in grid support. Second, it is suitable for offshore wind power transmission via flexible DC transmission, offering broader application prospects. Third, its integrated modular design reduces system losses, improves economic efficiency, and enhances operational reliability. Therefore, high-voltage, large-capacity energy storage systems hold significant research significance for new power systems dominated by renewable energy.

[0091] Before a high-voltage, large-capacity energy storage system is put into operation, it is necessary to use a companion valve tower in the valve tower test circuit to test each submodule in the valve tower under test. During the test, it is necessary to simulate the current, voltage and other parameters of the submodules in the valve tower under test under actual operating conditions. However, since traditional energy storage systems do not include factors such as battery cells, how to control the submodules in the valve tower test circuit during the test is a key research topic for researchers in this field. Based on this, it is necessary to provide a control method that can control the submodules in the valve tower test circuit during the test process in response to the above technical problems. The control method will be introduced below.

[0092] Figure 4 illustrates the application environment of the control method in an embodiment of the present application. Computer device 401 is capable of communicating with valve tower test circuit 402. Valve tower test circuit 402 includes a reactor 403, a test valve tower 404, and a companion test valve tower 405. The test valve tower can also be referred to as a test valve tower, and the valve tower can also be referred to as a valve section.

[0093] Continuing with Figure 4 , the test valve tower 404 and the accompanying test valve tower 405 can each be formed by connecting at least one submodule in series. For example, the test valve tower 404 includes submodules 404a, 404b, and 404c, and the accompanying test valve tower 405 includes submodules 405a, 405b, and 405c.

[0094] The high-voltage output terminals of the test valve tower 404 and the accompanying test valve tower 405 are connected via a reactor 403, while the low-voltage output terminals of the test valve tower 404 and the accompanying test valve tower 405 are directly connected. Each submodule includes a power unit and a battery unit. The power unit can adopt either a half-bridge topology as shown in Figure 2 or a full-bridge topology as shown in Figure 3. In this way, the valve tower test circuit 402 can simulate the current and voltage of the test valve tower 404 or the accompanying test valve tower 405 under real operating conditions, thereby verifying the reliability of the corresponding power unit and battery unit.

[0095] It should be noted that Figure 4 is only an example of a valve tower test circuit. In some embodiments, the accompanying test valve tower 405 may also include other devices capable of charging and discharging.

[0096] In some embodiments, the computer device 401 can be, but is not limited to, various personal computers, laptops, smart phones, tablet computers and portable wearable devices. The portable wearable devices can be smart watches, smart bracelets, head-mounted devices, etc. Of course, the computer device 401 can also be implemented using an independent server or a server cluster consisting of multiple servers.

[0097] In some embodiments, the computer device 401 also includes but is not limited to a central processing unit (CPU), and may also include at least one of a digital signal processor (DSP), a field programmable gate array (FPGA) or other programmable logic devices.

[0098] FIG5 is a flow chart of a control method in an embodiment of the present application. In an exemplary embodiment, as shown in FIG5 , a control method is provided, which is described by taking the application of the method to the computer device in FIG1 as an example, and includes the following S501 to S505.

[0099] S501, obtaining a test current of a valve tower test circuit.

[0100] In this embodiment, the valve tower test circuit includes at least a tested valve tower and a companion test valve tower. In some embodiments, the valve tower test circuit may further include a reactor.

[0101] The tested valve tower includes at least one submodule. The accompanying test valve tower may also include at least one submodule and may also include other devices capable of charging and discharging. It should be noted that the submodules in the tested valve tower or the accompanying test valve tower are connected in series.

[0102] The submodule can be a submodule in a high-voltage direct-mount energy storage system. The submodule includes a power unit and a battery unit, which are connected in parallel. The power unit includes switches, transistors, capacitors, and resistors, and can be a half-bridge or full-bridge topology. The battery unit includes a battery pack.

[0103] Continuing with Figure 4, when the test valve tower 404 and the accompanying test valve tower 405 are in operation, one valve tower is in a charging state and the other valve tower is in a discharging state. For example, if the test valve tower 404 is in a discharging state, the accompanying test valve tower 405 is in a charging state; if the test valve tower 404 is in a charging state, the accompanying test valve tower 405 is in a discharging state.

[0104] The test current is the charge and discharge current i between the tested valve tower 404 and the accompanying test valve tower 405. L As shown in Figure 4, when the charge and discharge current i L The direction of the test valve tower 405 points to the test valve tower 404, which means that the test valve tower 405 is charging the test valve tower 404, that is, the test valve tower 405 is in the discharge state and the test valve tower 404 is in the charging state. L If the direction is from the tested valve tower 404 to the accompanying test valve tower 405, it means that the tested valve tower 404 charges the accompanying test valve tower 405, that is, the tested valve tower 404 is in a discharging state and the accompanying test valve tower 405 is in a charging state.

[0105] In some embodiments, the computer device can obtain the test current of the valve tower test circuit 402 through a sensor. The sensor can obtain the test current i L The amplitude, direction, etc. For example, the sensor may include but is not limited to an oscilloscope.

[0106] S502 : Determine the modulation wave of each submodule of the target valve tower in the valve tower test circuit according to the test current and the preset reference current.

[0107] The preset reference current is used to indicate the target value of the charge and discharge current between the test valve tower 404 and the companion test valve tower 405. The computer device can obtain the preset reference current sent by other devices, or respond to user input operations to determine the preset reference current input by the user.

[0108] The preset reference current is i ref In some embodiments, the computer device can be configured to detect the current i L and preset reference current i ref , determine the modulation wave of each sub-module of the target valve tower in the valve tower test circuit.

[0109] The target valve tower is the valve tower to be controlled, referring to any valve tower in the valve tower test circuit. That is, the target valve tower can be the test valve tower 404 or the companion valve tower 405. Taking Figure 4 as an example, if the target valve tower is the test valve tower 404, the computer device will determine the modulation wave of submodule 404a, the modulation wave of submodule 404b, and the modulation wave of submodule 404c. If the target valve tower is the companion valve tower 405, the computer device will determine the modulation wave of submodule 405a, the modulation wave of submodule 405b, and the modulation wave of submodule 405c.

[0110] In some embodiments, the computer device can be used to test the current i L and preset reference current i ref The absolute value of the difference between them is used to perform PID (proportional integral differential) adjustment to obtain an adjustment result, and the modulation wave of each submodule of the target valve tower is determined according to the adjustment result and the preset modulation wave.

[0111] In some embodiments, the computer device can also be used to determine the test current i L , preset reference current i ref As well as the charge state of each submodule in the target valve tower, the modulation wave of each submodule of the target valve tower is determined, so that the power situation of each submodule is taken into consideration in the process of determining the modulation wave of each submodule. For example, the computer equipment can be used according to the test current i L and preset reference current i ref The basic offset is determined, and the offset to be adjusted is determined according to the charge state of each submodule in the target valve tower. The basic offset is then corrected using the offset to be adjusted to determine the modulation wave of each submodule.

[0112] S503: Control each submodule in the valve tower test circuit according to the modulation wave.

[0113] After determining the modulation waves of the submodules of the target valve tower, the computer device can control the submodules in the valve tower test circuit according to the modulation waves.

[0114] The duty cycle of the modulation wave can be determined by the modulation wave of the sub-module, and the duty cycle of the modulation wave can be used to control the on or off time of the transistor in the sub-module.

[0115] Taking half-bridge submodule 404a as an example, when it is necessary to control the test valve tower 404 to be in a charging state, the computer device can determine the on-time of transistor 204 and the off-time of transistor 205 based on the duty cycle of the modulation wave of submodule 404a, thereby controlling transistor 204 to be turned on according to the on-time duration and controlling transistor 205 to be turned off according to the off-time duration. In this way, submodule 404a can be controlled to be in a charging state. The same principle applies to other modules and will not be further described here.

[0116] In the above control method, the test current of the valve tower test circuit is obtained. Based on the test current and a preset reference current, the modulation wave of each submodule of the target valve tower in the valve tower test circuit is determined. Therefore, the modulation wave determined for each submodule can gradually bring the test current of the valve tower test circuit closer to the preset reference current, thereby improving the accuracy of the test process. Furthermore, by controlling each submodule in the valve tower test circuit according to the modulation wave, the valve tower test circuit can be controlled during the test process to verify the reliability of the submodule.

[0117] FIG6 is a schematic diagram of a flow chart of determining a modulated wave in an embodiment of the present application. In an exemplary embodiment, as shown in FIG6 , S502 includes S601 to S603 .

[0118] S601 , determining a first difference between the amplitude of a test current and the amplitude of a preset reference current.

[0119] In this embodiment, the computer device determines the test current i L The amplitude and preset reference current i ref The computer device can determine the first difference between the amplitudes of i L -i ref , we can also determine i ref -i L .

[0120] S602: Determine a basic offset of each submodule in the target valve tower according to the first difference, the direction of the test current, and a preset duty cycle of the target valve tower.

[0121] Among them, the direction of the test current is the charge and discharge current i in Figure 4 L The direction of the test current can be determined by sensor measurement. The direction of the test current can be from the test valve tower 405 to the test valve tower 404, or from the test valve tower 404 to the test valve tower 405. Hereinafter, the direction from the test valve tower 405 to the test valve tower 404 is referred to as the first direction, and the direction from the test valve tower 404 to the test valve tower 405 is referred to as the second direction.

[0122] The preset duty cycle C of the target valve tower represents the preset value of the duty cycle of the modulation wave of each submodule, which can be the average value or weighted average value of the duty cycles of each submodule. Since the duty cycle value range is [0, 1], C∈[0, 1]. Similarly, the computer device can obtain the preset duty cycle C sent by other devices, or respond to user input operations to determine the preset duty cycle C input by the user.

[0123] The computer device can then determine the base offset of each submodule in the target valve tower based on the first difference, the direction of the test current, and the preset duty cycle of the target valve tower. For example, when the test current is in a first direction, the computer device can determine the base offset based on the negative value of the product of the absolute value of the first difference and the preset duty cycle; when the test current is in a second direction, the computer device can determine the base offset based on the product of the absolute value of the first difference and the preset duty cycle.

[0124] It should be noted that the basic offset of each submodule in the target valve tower is the same.

[0125] S603 : Determine the modulation wave of each submodule of the target valve tower according to the basic offset of each submodule in the target valve tower.

[0126] In some embodiments, the computer device determines the modulation wave of each submodule of the target valve tower based on the basic offset of each submodule in the target valve tower. For example, the computer device can use the basic offset of each submodule in the target valve tower as the duty cycle of the modulation wave of each submodule to determine the modulation wave of each submodule. The computer device can also obtain the modulation wave of each submodule after limiting the basic offset of each submodule in the target valve tower.

[0127] In the above embodiment, by determining a first difference between the amplitude of the test current and the amplitude of the preset reference current, and determining the base offset of each submodule in the target valve tower based on the first difference, the direction of the test current, and the preset duty cycle of the target valve tower, and then determining the modulation wave of each submodule in the target valve tower based on the base offset of each submodule in the target valve tower, the modulation wave of each submodule in the target valve tower can be determined more accurately. In this way, after controlling each submodule in the valve tower test circuit according to the modulation wave, the test current of the valve tower test circuit gradually approaches the preset reference current.

[0128] FIG7 is a schematic diagram of another flow chart of determining a modulated wave in an embodiment of the present application. In an exemplary embodiment, as shown in FIG7 , S603 includes S701 to S702 .

[0129] S701 : For each submodule in the target valve tower, determine the offset to be adjusted of the submodule according to the direction of the test current and the charge state of the submodule.

[0130] Before the valve tower test circuit is run, the battery packs of the submodules may be undercharged due to battery self-discharge or other factors, resulting in significant differences in the State of Charge (SOC) values ​​between submodules. During the operation of the valve tower test circuit, the SOC values ​​between submodules may also vary.

[0131] Therefore, to improve the uniformity of the submodule charge during operation of the valve tower test circuit, this embodiment also determines the offset to be adjusted for each submodule in the target valve tower based on the direction of the test current and the submodule's charge state. In other words, different submodules have different offsets to be adjusted.

[0132] The computer device may obtain the state of charge of each submodule in the target valve tower through sensors or the like, that is, obtain the SOC of the battery pack of the battery cells in each submodule.

[0133] For example, the computer device may set a reference SOC and calculate a target difference between the SOC of each submodule in the target valve tower and the reference SOC. When the test current is directed in a first direction, the offset to be adjusted is determined based on the negative value of the target difference; when the test current is directed in a second direction, the base offset is determined based on the target difference.

[0134] S702: Determine a modulation wave of the submodule according to the basic offset and the offset to be adjusted of the submodule.

[0135] In some embodiments, the computer device can determine the modulation wave of the submodule based on the basic offset and the offset to be adjusted of the submodule. It is understandable that since the offsets to be adjusted of different submodules are different, the modulation waves of different submodules are also different.

[0136] For example, the computer device may sum or subtract the basic offset and the offset to be adjusted of the submodule to determine the duty cycle of the modulation wave of the submodule, and further determine the modulation wave of the submodule.

[0137] In the above embodiment, for each sub-module in the target valve tower, the offset to be adjusted of the sub-module is determined according to the direction of the test current and the charge state of the sub-module, and then the modulation wave of the sub-module is determined according to the basic offset and the offset to be adjusted of the sub-module. Therefore, the modulation wave of each sub-module takes the charge state of the sub-module into consideration, which is beneficial to the homogenization of the SOC between different sub-modules of the same valve tower.

[0138] FIG8 is a flowchart of determining an offset to be adjusted in an embodiment of the present application. In an exemplary embodiment, as shown in FIG8 , S701 includes S801 to S803 .

[0139] S801: Determine an average value of the state of charge of each submodule in the target valve tower.

[0140] In this embodiment, the computer first determines the average state of charge (SOC) of each submodule in the target valve tower. For example, using test valve tower 404 as the target valve tower, the computer then determines the average SOC of submodule 404a, submodule 404b, and submodule 404c.

[0141] S802 : Determine a second difference between the average value and the state of charge of the submodule.

[0142] In some embodiments, when it is necessary to determine the offset to be adjusted of the submodule 404 a , the computer device determines a second difference between the SOC of the submodule 404 a and the average value determined in S801 .

[0143] S803: Determine the offset to be adjusted of the submodule according to the second difference and the direction of the test current.

[0144] The computer device can then determine the offset to be adjusted for submodule 404a based on the second difference in S802 and the direction of the test current. For example, when the test current is in the first direction, the computer device determines the offset to be adjusted based on the negative value of the second difference; when the test current is in the second direction, the computer device determines the base offset based on the second difference. The same applies to other submodules and will not be further described here.

[0145] In the above embodiment, the average state of charge of each submodule in the target valve tower is determined, and a second difference between the average and the submodule's state of charge is determined, so that the submodule's offset to be adjusted is determined based on the second difference and the direction of the test current. In this way, the submodule's offset to be adjusted can reflect the difference between the SOC of the submodule and the SOCs of other submodules in the same valve tower, facilitating SOC uniformity among different submodules in the same valve tower, and thus facilitating charge balance among different submodules in the same valve tower.

[0146] FIG9 is a schematic diagram of another flow chart of determining the offset to be adjusted in an embodiment of the present application. In an exemplary embodiment, as shown in FIG9 , S803 includes S901 to S903 .

[0147] S901: Process the second difference to obtain a first result.

[0148] In this embodiment, the processing of the second difference may include but is not limited to at least one of proportional regulation, proportional integral (PI) regulation, and PID (proportional integral derivative) regulation. In some embodiments, the processing of the second difference may also include amplitude limiting.

[0149] For example, the computer device may perform PI adjustment on the second difference only to obtain the first result. The computer device may also perform PI adjustment on the second difference and perform a clipping process on the result of the PI adjustment on the second difference to obtain the first result.

[0150] FIG10 is a schematic diagram illustrating a principle for determining a first result according to an embodiment of the present application. As shown in FIG10 , m represents the target valve tower in the valve tower test circuit. When m=1, the target valve tower is the tested valve tower 404. When m=2, the target valve tower is the accompanying test valve tower 405. n represents the submodule number. When m=1, n=1 represents submodule 404a. When m=1, n=2 represents submodule 404b, and so on.

[0151] In some embodiments, SOCm_average represents the average SOC of each submodule in the target valve tower, SOCm_n represents the SOC of the nth submodule in the target valve tower, and Sm_n represents the first result of the nth submodule in the target valve tower. Since the duty cycle ranges from [0 to 1], the range of Sm_n should be between [C, 1-C] or [1-C, C].

[0152] In some embodiments, Sm_n affects the initial charge equalization rate. If the initial charge values ​​between submodules deviate significantly, Sm_n can be clipped to 0.2 or -0.2. It should be understood that the initial charge values ​​between submodules are also the initial SOC values ​​of the battery packs within the submodules' battery cells.

[0153] 10 , taking m=1 and n=1 as an example, the computer device determines the average of the SOCs of submodule 404a, submodule 404b, and submodule 404c as SOC1_average, and determines the SOC of submodule 404a as SOC1_1. Furthermore, the computer device determines a second difference between SOC1_1 and SOC1_average, and performs PI regulation and clipping on this second difference to obtain a first result S1_1 for submodule 404a.

[0154] S902, if the direction of the test current is the first direction, the negative value of the first result is used as the offset to be adjusted of the submodule; the first direction is used to instruct the accompanying test valve tower in the valve tower test circuit to charge the tested valve tower in the valve tower test circuit.

[0155] In some embodiments, referring again to FIG. 4 , when the test current is in the first direction, that is, when the companion valve tower 405 is charging the test valve tower 404, the computer device uses the negative value of the first result as the offset to be adjusted for the submodule. For example, assuming the test current is in the first direction, the computer device uses -S1_1 as the offset to be adjusted for submodule 404a.

[0156] S903, if the direction of the test current is the second direction, the first result is used as the offset to be adjusted of the submodule; the second direction is used to instruct the tested valve tower in the valve tower test circuit to charge the accompanying valve tower in the valve tower test circuit.

[0157] Continuing with Figure 4 , when the test current is in the second direction, that is, when the test valve tower 404 is charging the companion valve tower 405, the computer device directly uses the first result as the offset to be adjusted for the submodule. For example, assuming the test current is in the second direction, the computer device uses S1_1 as the offset to be adjusted for submodule 404a.

[0158] In the above embodiment, since the first direction is used to instruct the accompanying test valve tower in the valve tower test circuit to charge the tested valve tower in the valve tower test circuit, and the first direction is used to instruct the tested valve tower in the valve tower test circuit to charge the accompanying test valve tower in the valve tower test circuit, after processing the second difference to obtain the first result, if the direction of the test current is the first direction, the negative value of the first result is used as the offset to be adjusted for the submodule, and if the direction of the test current is the second direction, the first result is used as the offset to be adjusted for the submodule. In this way, the offset to be adjusted for the submodule is determined based on the second difference and the direction of the test current. On the one hand, the determined offset to be adjusted can distinguish the charging and discharging conditions in the valve tower test circuit, and on the other hand, the SOC of each submodule in the same valve tower can be considered in the process of determining the offset to be adjusted.

[0159] FIG11 is a flowchart of determining a basic offset in an embodiment of the present application. In an exemplary embodiment, as shown in FIG11 , S602 includes S1101 to S1103 .

[0160] S1101: Process the first difference to obtain a second result.

[0161] In this embodiment, the processing of the first difference may include, but is not limited to, at least one of proportional regulation, proportional integral (PI) regulation, and PID (proportional integral derivative) regulation. In some embodiments, the processing of the first difference may also include a limiting process.

[0162] For example, the computer device may perform PI adjustment on only the first difference to obtain the second result. The computer device may also perform PI adjustment on the first difference and then perform a clipping process on the result of the PI adjustment on the first difference to obtain the second result. It should be noted that the second result is always positive.

[0163] S1102: If the direction of the test current is the first direction, the negative value of the product of the second result and the preset duty cycle is used as the basic offset.

[0164] In this embodiment, continuing with the above example, when the direction of the test current is the first direction, that is, when the companion valve tower 405 charges the tested valve tower 404, the computer device uses the negative value of the product of the second result and the preset duty cycle C as the basic offset. For example, assuming that the direction of the test current is the first direction, and the second difference is processed by PI regulation and limiting to obtain K, the computer device uses -K*C as the basic offset.

[0165] S1103: If the direction of the test current is the second direction, the product of the second result and the preset duty cycle is used as the basic offset.

[0166] When the test current is directed in the second direction, that is, when the test valve tower 404 is charging the companion test valve tower 405, the computer device uses the product of the second result and the preset duty cycle C as the basic offset. For example, assuming that the test current is directed in the second direction, the second difference is processed by PI adjustment and limiting to obtain K, and the computer device uses K*C as the basic offset.

[0167] In the above embodiment, the first difference is processed to obtain a second result. When the test current is directed in the first direction, the negative value of the product of the second result and the preset duty cycle is used as the base offset. When the test current is directed in the second direction, the product of the second result and the preset duty cycle is used as the base offset. In this way, not only can the charge and discharge conditions in the valve tower test circuit be distinguished during the determination of the base offset, but the base offset of each submodule in the target valve tower can also be determined based on the first difference, the direction of the test current, and the preset duty cycle of the target valve tower.

[0168] FIG12 is a schematic diagram of another flow chart of determining a modulated wave in an embodiment of the present application. In an exemplary embodiment, as shown in FIG12 , S702 includes S1201 to S1203 .

[0169] S1201 : For each submodule in the target valve tower, if the direction of the test current is the first direction, determine the modulation wave of the submodule according to the difference between the basic offset and the offset to be adjusted of the submodule.

[0170] In this embodiment, continuing to take submodule 404a as an example, if the direction of the test current is the first direction, the computer device can use the difference between the basic offset and the offset to be adjusted of submodule 404a as the modulation wave of submodule 404a.

[0171] In this way, when the SOC of submodule 404a is higher than the average value of the SOC of each submodule in the test valve tower 404, the second difference is a positive value, the offset to be adjusted is a negative value, and the basic offset is a negative value, then the modulation wave of submodule 404a is a negative value with a smaller absolute value, which is equivalent to reducing the duty cycle of the modulation wave of submodule 404a, thereby reducing the charging time of the battery unit in submodule 404a, so as to suppress the increase of the SOC of submodule 404a.

[0172] When the SOC of submodule 404a is lower than the average SOC of each submodule in the test valve tower 404, the second difference is a negative value, the offset to be adjusted is a positive value, and the basic offset is a negative value, then the modulation wave of submodule 404a is a negative value with a large absolute value, which is equivalent to increasing the duty cycle of the modulation wave of submodule 404a, thereby increasing the charging time of the battery unit in submodule 404a, so as to promote the increase of the SOC of submodule 404a.

[0173] S1202: If the direction of the test current is the second direction, determine the modulation wave of the submodule according to the sum of the basic offset and the offset to be adjusted.

[0174] If the test current is in the second direction, the computer device may use the sum of the base offset and the offset to be adjusted of submodule 404a as the modulation wave of submodule 404a. Thus, when the SOC of submodule 404a is higher than the average SOC of each submodule in the test valve tower 404, the second difference is positive, the offset to be adjusted is positive, and the base offset is positive. Consequently, the modulation wave of submodule 404a is a positive value with a large absolute value. This is equivalent to increasing the duty cycle of the modulation wave of submodule 404a, thereby increasing the discharge time of the battery cells in submodule 404a and promoting a reduction in the SOC of submodule 404a.

[0175] When the SOC of submodule 404a is lower than the average value of the SOCs of the submodules in the test valve tower 404, the second difference is a negative value, the offset to be adjusted is a positive value, and the basic offset is a positive value, then the modulation wave of submodule 404a has an amplitude with a smaller absolute value, which is equivalent to reducing the duty cycle of the modulation wave of submodule 404a, thereby reducing the discharge time of the battery cell in submodule 404a, so as to suppress the reduction of the SOC of submodule 404a.

[0176] It can be understood that since the modulation wave of each sub-module is determined according to its own SOC, by controlling the corresponding sub-module according to the modulation wave of each sub-module, the sub-module with a higher SOC will reduce the charging time or increase the discharging time, and the sub-module with a lower SOC will increase the charging time or reduce the discharging time. In this way, the SOC of each sub-module in the same valve tower will approach the same, thereby making the power of the battery pack in each sub-module of the same valve tower uniform.

[0177] In the above embodiment, for each submodule in the target valve tower, if the test current is directed in the first direction, the submodule's modulation wave is determined based on the difference between the base offset and the submodule's offset to be adjusted. If the test current is directed in the second direction, the submodule's modulation wave is determined based on the sum of the base offset and the offset to be adjusted. This allows the power levels of each submodule in the same valve tower to converge during operation, thereby improving the stability of the valve tower test circuit.

[0178] In an exemplary embodiment, S503 may be implemented by one of the following:

[0179] First, when the target valve tower is the tested valve tower in the valve tower test circuit, the submodules in the accompanying test valve tower in the valve tower test circuit are charged according to the modulation wave of each submodule in the tested valve tower. In other words, when the target valve tower is the tested valve tower 404, the computer device can generate the modulation wave of each submodule in the tested valve tower 404 to control the tested valve tower 404 to charge each submodule in the accompanying test valve tower 405.

[0180] Second, when the target valve tower is a companion valve tower in a valve tower test circuit, the submodules in the tested valve tower in the valve tower test circuit are charged according to the modulation wave of each submodule in the companion valve tower. That is, when the target valve tower is companion valve tower 405, the computer device can also generate modulation waves for each submodule in companion valve tower 405 to control companion valve tower 405 to charge each submodule in the tested valve tower 404.

[0181] In the above embodiments, since the target valve tower is the tested valve tower in the valve tower test circuit, each sub-module in the accompanying valve tower in the valve tower test circuit can be charged according to the modulation wave of each sub-module in the tested valve tower; and since the target valve tower is the tested valve tower in the valve tower test circuit, each sub-module in the tested valve tower in the valve tower test circuit can be charged according to the modulation wave of each sub-module in the accompanying valve tower, the flexibility of the valve tower test circuit is improved.

[0182] FIG13 is a schematic diagram of another flow chart of determining a modulated wave in an embodiment of the present application. In an exemplary embodiment, as shown in FIG13 , S502 includes S1301 to S1302 .

[0183] S1301: Determine the carrier phase shift of each submodule in the target valve tower according to the operating quantity and preset angle of each submodule in the target valve tower.

[0184] The operating number of each submodule represents the number of submodules in the target valve tower that are operating normally. For example, if the target valve tower is the test valve tower, under normal operation, the operating number of each submodule is N. If one submodule is bypassed, the computer determines the operating number of the submodule to be N-1.

[0185] In some embodiments, the computer device can periodically obtain the running quantity of each submodule in the target valve tower sent by other devices, and can also periodically receive the running status of each submodule sent by other devices, and determine the running quantity in the target valve tower based on the running status of each submodule.

[0186] The preset angle refers to the variable range of the phase of the modulated wave, which is a value greater than 0° (degrees). Exemplarily, the preset angle may be 360°.

[0187] In some embodiments, the computer device can determine the carrier phase shift of each submodule in the target valve tower based on the quotient between the preset angle and the number of operating submodules in the target valve tower. For example, if the number of operating submodules is N, the computer device uses 360° / N as the carrier phase shift of each submodule in the target valve tower, that is, the phase difference between the modulation waves of every two adjacent submodules in the target valve tower is 360° / N. It can be understood that if the number of operating submodules is N-1, the computer device uses 360° / (N-1) as the carrier phase shift of each submodule in the target valve tower, that is, the phase difference between the modulation waves of every two adjacent submodules in the target valve tower is 360° / (N-1).

[0188] S1302: Determine the modulation wave of each submodule of the target valve tower according to the test current, the preset reference current, and the carrier phase shift of each submodule in the target valve tower.

[0189] In some embodiments, the computer device can determine the modulation wave of each submodule of the target valve tower based on the test current, the preset reference current, and the carrier phase shift of each submodule in the target valve tower. For example, the computer device can determine the initial modulation wave of the submodule based on the base offset and the offset to be adjusted of the submodule, and after performing a carrier phase shift of 360° / N on the initial modulation wave of the submodule, determine the modulation wave of each submodule of the target valve tower.

[0190] In the above embodiment, the carrier phase shift of each submodule in the target valve tower is determined based on the number of submodules in operation and the preset angle, and the modulation wave of each submodule in the target valve tower is determined based on the test current, the preset reference current, and the carrier phase shift of each submodule in the target valve tower. Therefore, the modulation wave of each submodule obtained by carrier phase shifting has high bandwidth utilization and strong anti-interference ability, thereby improving the quality of the modulation wave.

[0191] To more clearly describe the control method in the embodiment of the present application, the following description is provided with reference to Figures 14 and 15. Figure 14 is a schematic diagram showing the principle of the control method in the embodiment of the present application, where the sample valve tower 404 and the accompanying test valve tower 405 each include three submodules as an example.

[0192] In Figure 14, s(i L ) is a sign function, and the test current i L When the test valve tower 405 charges the test valve tower 404, that is, the test current i L When the test valve tower 405 points to the test valve tower 404, i L Greater than 0, s(i L ) takes -1, the output value is opposite to the input value; when the test valve tower 404 charges the accompanying test valve tower 405, that is, the test current i L When the test valve tower 404 points to the accompanying test valve tower 405, i L Less than 0, s(i L ) takes 1, the output value is the same as the input value.

[0193] 4 , PWM1_1 represents the modulation wave of the sub-module 404a of the tested valve tower 404, which is used to drive the transistor IGBT1_1 of the sub-module 404a of the tested valve tower 404; PWM1_2 represents the modulation wave of the sub-module 404b of the tested valve tower 404, which is used to drive the transistor IGBT1_2 of the sub-module 404b of the tested valve tower 404; PWM1_3 represents the modulation wave of the sub-module 404c of the tested valve tower 404, which is used to drive the transistor IGBT1_3 of the sub-module 404c of the tested valve tower 404.

[0194] PWM2_1 represents the modulation wave of the neutron module 405a of the test valve tower 405, which is used to drive the transistor IGBT2_1 of the neutron module 405a of the test valve tower 405; PWM2_2 represents the modulation wave of the neutron module 405b of the test valve tower 405, which is used to drive the transistor IGBT2_2 of the neutron module 405b of the test valve tower 405; PWM2_3 represents the modulation wave of the neutron module 405c of the test valve tower 405, which is used to drive the transistor IGBT2_3 of the neutron module 405c of the test valve tower 405.

[0195] Combined with Figure 14, it can be seen that the computer equipment will determine the test current i L The amplitude and preset reference current i ref and performing PI regulation and amplitude limiting on the first difference to obtain a second result.

[0196] Taking submodule 404a as an example, if the test current i L The direction is the second direction, s(i L ) is 1, the computer device uses the product of the second result and the preset duty cycle C as the base offset. Furthermore, the computer device uses the first result S1_1 as the offset to be adjusted by submodule 404a. The computer device then determines the sum of the base offset and the offset to be adjusted by submodule 404a and limits the sum to obtain PWM1_1.

[0197] Taking submodule 405a as an example, if the test current i L The direction is the first direction, s(i L ) is -1, the computer device uses the negative value of the product of the second result and the preset duty cycle C as the base offset. Furthermore, the computer device uses the negative value of the first result S2_1 as the offset to be adjusted in submodule 405a. The computer device then determines the difference between the base offset and the offset to be adjusted in submodule 405a, and limits the difference to obtain PWM1_1.

[0198] FIG15 is a process diagram of a control method in an embodiment of the present application. Referring to FIG14 and FIG15 , the computer device may execute the control method according to the following process.

[0199] S1501, obtain the test current of the valve tower test circuit.

[0200] S1502, determining a first difference between the amplitude of the test current and the amplitude of a preset reference current.

[0201] S1503: Process the first difference to obtain a second result.

[0202] S1504: If the direction of the test current is the first direction, the negative value of the product of the second result and the preset duty cycle of the target valve tower is used as the basic offset.

[0203] S1505: If the direction of the test current is the second direction, the product of the second result and the preset duty cycle of the target valve tower is used as the basic offset.

[0204] S1506 : For each submodule in the target valve tower, determine an average value of the state of charge of each submodule in the target valve tower.

[0205] S1507 : Determine a second difference between the average value and the state of charge of the submodule.

[0206] S1508: Process the second difference to obtain a first result.

[0207] S1509: If the direction of the test current is the first direction, the negative value of the first result is used as the offset to be adjusted of the submodule. The first direction is used to instruct the companion valve tower in the valve tower test circuit to charge the tested valve tower in the valve tower test circuit.

[0208] S1510: If the direction of the test current is the second direction, use the first result as the offset to be adjusted of the submodule, wherein the second direction is used to instruct the tested valve tower in the valve tower test circuit to charge the accompanying valve tower in the valve tower test circuit.

[0209] S1511 , for each submodule in the target valve tower, if the direction of the test current is the first direction, determine the modulation wave of the submodule according to the difference between the basic offset and the offset to be adjusted of the submodule.

[0210] At step S1512, if the direction of the test current is the second direction, a modulation wave of the submodule is determined based on the sum of the base offset and the offset to be adjusted. In some embodiments, after step S1512, the computer device may further determine a carrier phase shift for each submodule in the target valve tower based on the number of operating submodules in the target valve tower and a preset angle, thereby performing carrier phase shifting for the modulation wave of the submodule.

[0211] S1513, controlling each submodule in the valve tower test circuit according to the modulation wave.

[0212] The processes of S1501 to S1513 can be referred to in the above embodiment and will not be repeated here. This embodiment provides a control method for a valve tower test circuit capable of performing battery SOC balancing. By coordinating the value ranges of Sm_n and C, the valve tower test can be made closer to actual engineering conditions, thereby ensuring that the power levels of the various submodules in the same valve tower converge during operation of the valve tower test circuit.

[0213] Figure 16 is a schematic diagram of the results of a valve tower test circuit in an embodiment of the present application. As shown in Figure 16, the valve tower test circuit can include valve tower 1, valve tower 2, and a reactor. Valve tower 1, as the valve tower under test, includes submodules 1, 2, and 3; valve tower 2, as the accompanying valve tower under test, includes submodules 4, 5, and 6.

[0214] To verify the power balancing effect of this embodiment, the SOCs of submodules 1, 2, and 3 were set to 55%, 45%, and 48% at the start, respectively. The SOCs of submodules 4, 5, and 6 were set to 75%, 70%, and 65%, respectively. The test parameters for the valve tower test circuit are shown in Table 1.

[0215] In Table 1, the battery capacity, maximum battery voltage, and minimum battery voltage represent the parameters of the battery pack in the battery unit of each submodule, and the platform design current represents the test current i of the valve tower test circuit. L The switching frequency of valve tower 1 and the switching frequency of valve tower 2 respectively indicate the control frequencies of the modulation waves of valve tower 1 and valve tower 2. In some embodiments, the switching frequency of the test valve tower can be fixed, and the switching frequency of the sample valve tower can be adjustable.

[0216] Table 1 Test parameters

[0217]

[0218] FIG17 is a schematic diagram of an effect of an embodiment of the present application, illustrating the effect of using proportional adjustment to determine the offset to be adjusted for each submodule, and then determining the modulation wave of each submodule using the base offset and the offset to be adjusted for each submodule. It will be understood that the process of using proportional adjustment to determine the offset to be adjusted for a submodule is the process of performing proportional adjustment on the second difference to obtain a first result, and then determining the offset to be adjusted for the submodule using the first result and the direction of the test current.

[0219] Figure 17(a) shows how the SOC1 of submodule 1, SOC2 of submodule 2, and SOC3 of submodule 3 change over time in valve tower 1. Figure 17(b) shows how the SOC4 of submodule 4, SOC5 of submodule 5, and SOC6 of submodule 6 change over time in valve tower 2. Combining Figures 17(a) and 17(b) shows that the SOCs of the submodules in the same valve tower tend to converge over time.

[0220] FIG18 is a schematic diagram of another effect in an embodiment of the present application. FIG17 illustrates the effect after using PI regulation to determine the offset to be adjusted for each submodule, and then determining the modulation wave of each submodule using the base offset and the offset to be adjusted for each submodule. It can be understood that the process of using PI regulation to determine the offset to be adjusted for a submodule is the process of performing PI regulation on the second difference to obtain a first result, and then determining the offset to be adjusted for the submodule using the first result and the direction of the test current.

[0221] Figure 18(a) shows how the SOC1 of submodule 1, SOC2 of submodule 2, and SOC3 of submodule 3 change over time in valve tower 1. Figure 18(b) shows how the SOC4 of submodule 4, SOC5 of submodule 5, and SOC6 of submodule 6 change over time in valve tower 2.

[0222] Combining Figures 18(a) and 18(b), we can see that due to the use of PI regulation to control the offset to be adjusted, when the SOC of the same valve tower is less than a certain value, PI regulation can effectively track it, allowing the SOC of each submodule in the same valve tower to quickly converge. For example, Valve Tower 1 successfully achieved PI tracking in approximately 50 seconds, and the SOCs of its submodules 1 to 3 also converged to the same level within the same period. Valve Tower 2 successfully achieved PI tracking in approximately 44 seconds, and the SOCs of its submodules 4 to 6 also converged to the same level within the same period. The convergence rate of SOC before PI tracking depends on the initial SOC value of the battery pack in the submodule, the battery pack's battery capacity, and the SOC limit value.

[0223] FIG19 is a schematic diagram of the effect of the test current in the embodiment of the present application. As shown in FIG19 , due to the use of PI regulation and carrier phase shifting, the test current is relatively smooth and has high stability.

[0224] It should be understood that, although the various steps in the flowcharts involved in the various embodiments described above are displayed in sequence according to the instructions of the arrows, these steps are not necessarily executed in sequence in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least a portion of the steps in the flowcharts involved in the various embodiments described above can include multiple steps or multiple stages, and these steps or stages are not necessarily executed and completed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a portion of steps or stages in other steps.

[0225] Based on the same inventive concept, the present application also provides a control device for implementing the aforementioned control method. The solution provided by this device is similar to the solution described in the aforementioned method. Therefore, the specific limitations of one or more control device embodiments provided below can be found in the above-mentioned limitations of the control method and will not be repeated here.

[0226] FIG20 is a structural block diagram of a control and adjustment device in an embodiment of the present application. In an exemplary embodiment, as shown in FIG20 , a control device 2000 is provided, including: an acquisition module 2001, a determination module 2002, and a control module 2003, wherein:

[0227] The acquisition module 2001 is used to obtain the test current of the valve tower test circuit.

[0228] The determination module 2002 is used to determine the modulation wave of each submodule of the target valve tower in the valve tower test circuit according to the test current and the preset reference current.

[0229] The control module 2003 is used to control each submodule in the valve tower test circuit according to the modulation wave.

[0230] In the above-described control device, the test current of the valve tower test circuit is acquired. Based on the test current and a preset reference current, the modulation wave of each submodule of the target valve tower in the valve tower test circuit is determined. Therefore, the modulation wave determined for each submodule can gradually bring the test current of the valve tower test circuit closer to the preset reference current, thereby improving the accuracy of the test process. Furthermore, by controlling each submodule in the valve tower test circuit based on the modulation wave, the valve tower test circuit can be controlled during the test process to verify the reliability of the submodules.

[0231] FIG21 is a structural block diagram of a determination module in an embodiment of the present application. In an exemplary embodiment, as shown in FIG21 , the determination module 2002 includes:

[0232] The first determining unit 2101 is configured to determine a first difference between the amplitude of the test current and the amplitude of a preset reference current.

[0233] The second determining unit 2102 is configured to determine a basic offset of each submodule in the target valve tower according to the first difference, the direction of the test current, and the preset duty cycle of the target valve tower.

[0234] The third determining unit 2103 is configured to determine the modulation wave of each submodule of the target valve tower according to the basic offset of each submodule in the target valve tower.

[0235] FIG22 is a structural block diagram of a third determining unit in an embodiment of the present application. In an exemplary embodiment, as shown in FIG22 , the third determining unit 2103 includes:

[0236] The first determining subunit 2201 is configured to determine the offset to be adjusted of each submodule in the target valve tower according to the direction of the test current and the charge state of the submodule.

[0237] The second determining subunit 2202 is configured to determine the modulation wave of the submodule according to the basic offset and the offset to be adjusted of the submodule.

[0238] In some embodiments, the first determination subunit 2201 is also used to determine the average value of the charge state of each submodule in the target valve tower; determine the second difference between the average value and the charge state of the submodule; and determine the offset to be adjusted of the submodule based on the second difference and the direction of the test current.

[0239] In some embodiments, the first determination subunit 2201 is also used to process the second difference to obtain a first result; if the direction of the test current is the first direction, the negative value of the first result is used as the offset to be adjusted of the submodule; the first direction is used to instruct the accompanying test valve tower in the valve tower test circuit to charge the tested valve tower in the valve tower test circuit; if the direction of the test current is the second direction, the first result is used as the offset to be adjusted of the submodule; the second direction is used to instruct the tested valve tower in the valve tower test circuit to charge the accompanying test valve tower in the valve tower test circuit.

[0240] FIG23 is a structural block diagram of a second determining unit in an embodiment of the present application. In an exemplary embodiment, as shown in FIG23 , the second determining unit 2102 includes:

[0241] The processing subunit 2301 is configured to process the first difference to obtain a second result.

[0242] The third determining subunit 2302 is configured to use a negative value of a product of the second result and a preset duty cycle as a basic offset if the direction of the test current is the first direction.

[0243] The fourth determining subunit 2303 is configured to use the product of the second result and the preset duty cycle as a basic offset if the direction of the test current is the second direction.

[0244] In some embodiments, the second determination subunit 2202 is also used to determine, for each submodule in the target valve tower, the modulation wave of the submodule based on the difference between the basic offset and the offset to be adjusted of the submodule if the direction of the test current is the first direction; if the direction of the test current is the second direction, the modulation wave of the submodule based on the sum of the basic offset and the offset to be adjusted.

[0245] In some embodiments, the control module 2003 is also used to charge each sub-module in the accompanying valve tower in the valve tower test circuit according to the modulation wave of each sub-module in the tested valve tower when the target valve tower is the tested valve tower in the valve tower test circuit; and to charge each sub-module in the accompanying valve tower in the valve tower test circuit according to the modulation wave of each sub-module in the accompanying valve tower when the target valve tower is the tested valve tower in the valve tower test circuit.

[0246] In some embodiments, the determination module 2002 is also used to determine the carrier phase shift of each submodule in the target valve tower based on the operating number and preset angle of each submodule in the target valve tower; and determine the modulation wave of each submodule of the target valve tower based on the test current, the preset reference current and the carrier phase shift of each submodule in the target valve tower.

[0247] Each module in the above-mentioned control device can be implemented in whole or in part through software, hardware, or a combination thereof. Each module can be embedded in or independent of the processor in the computer device in hardware form, or can be stored in the memory of the computer device in software form, so that the processor can call and execute the corresponding operations of each module.

[0248] Figure 24 is a diagram of the internal structure of a computer device in an embodiment of the present application. In an exemplary embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be as shown in Figure 24. The computer device includes a processor, a memory, an input / output interface (I / O), and a communication interface. The processor, memory, and I / O interface are connected via a system bus, and the communication interface is connected to the system bus via the I / O interface. The processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program, and a database. The internal memory provides an environment for the operation of the operating system and computer program in the non-volatile storage medium. The database of the computer device is used to store relevant data. The I / O interface of the computer device is used to exchange information between the processor and external devices. The communication interface of the computer device is used to communicate with external terminals via a network connection. When the computer program is executed by the processor, a control method is implemented.

[0249] Those skilled in the art will understand that the structure shown in Figure 24 is merely a block diagram of a portion of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than shown in the figure, or combine certain components, or have a different component arrangement.

[0250] In an exemplary embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the following steps are implemented:

[0251] Obtain the test current of the valve tower test circuit;

[0252] Determining the modulation wave of each submodule of the target valve tower in the valve tower test circuit according to the test current and the preset reference current;

[0253] Each submodule in the valve tower test circuit is controlled according to the modulation wave.

[0254] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0255] Determine a first difference between the amplitude of the test current and the amplitude of the preset reference current; determine a basic offset of each submodule in the target valve tower based on the first difference, the direction of the test current and the preset duty cycle of the target valve tower; determine a modulation wave of each submodule of the target valve tower based on the basic offset of each submodule in the target valve tower.

[0256] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0257] For each submodule in the target valve tower, the offset to be adjusted of the submodule is determined according to the direction of the test current and the charge state of the submodule; and the modulation wave of the submodule is determined according to the basic offset and the offset to be adjusted of the submodule.

[0258] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0259] Determine an average value of the state of charge of each submodule in the target valve tower; determine a second difference between the average value and the state of charge of the submodule; and determine an offset to be adjusted for the submodule based on the second difference and the direction of the test current.

[0260] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0261] The second difference is processed to obtain a first result; if the direction of the test current is the first direction, the negative value of the first result is used as the offset to be adjusted of the submodule; the first direction is used to instruct the accompanying test valve tower in the valve tower test circuit to charge the tested valve tower in the valve tower test circuit; if the direction of the test current is the second direction, the first result is used as the offset to be adjusted of the submodule; the second direction is used to instruct the tested valve tower in the valve tower test circuit to charge the accompanying test valve tower in the valve tower test circuit.

[0262] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0263] The first difference is processed to obtain a second result; if the direction of the test current is the first direction, the negative value of the product of the second result and the preset duty cycle is used as the basic offset; if the direction of the test current is the second direction, the product of the second result and the preset duty cycle is used as the basic offset.

[0264] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0265] For each submodule in the target valve tower, if the direction of the test current is the first direction, the modulation wave of the submodule is determined according to the difference between the basic offset and the offset to be adjusted of the submodule; if the direction of the test current is the second direction, the modulation wave of the submodule is determined according to the sum of the basic offset and the offset to be adjusted.

[0266] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0267] When the target valve tower is the tested valve tower in the valve tower test circuit, each sub-module in the accompanying valve tower in the valve tower test circuit is charged according to the modulation wave of each sub-module in the tested valve tower; when the target valve tower is the accompanying valve tower in the valve tower test circuit, each sub-module in the tested valve tower in the valve tower test circuit is charged according to the modulation wave of each sub-module in the accompanying valve tower.

[0268] In one embodiment, when the processor executes the computer program, the processor further implements the following steps:

[0269] According to the operating number and preset angle of each submodule in the target valve tower, the carrier phase shift of each submodule in the target valve tower is determined; according to the test current, the preset reference current and the carrier phase shift of each submodule in the target valve tower, the modulation wave of each submodule of the target valve tower is determined.

[0270] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the following steps are implemented:

[0271] Obtain the test current of the valve tower test circuit;

[0272] Determining the modulation wave of each submodule of the target valve tower in the valve tower test circuit according to the test current and the preset reference current;

[0273] Each submodule in the valve tower test circuit is controlled according to the modulation wave.

[0274] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0275] Determine a first difference between the amplitude of the test current and the amplitude of the preset reference current; determine a basic offset of each submodule in the target valve tower based on the first difference, the direction of the test current and the preset duty cycle of the target valve tower; determine a modulation wave of each submodule of the target valve tower based on the basic offset of each submodule in the target valve tower.

[0276] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0277] For each submodule in the target valve tower, the offset to be adjusted of the submodule is determined according to the direction of the test current and the charge state of the submodule; and the modulation wave of the submodule is determined according to the basic offset and the offset to be adjusted of the submodule.

[0278] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0279] Determine an average value of the state of charge of each submodule in the target valve tower; determine a second difference between the average value and the state of charge of the submodule; and determine an offset to be adjusted for the submodule based on the second difference and the direction of the test current.

[0280] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0281] The second difference is processed to obtain a first result; if the direction of the test current is the first direction, the negative value of the first result is used as the offset to be adjusted of the submodule; the first direction is used to instruct the accompanying test valve tower in the valve tower test circuit to charge the tested valve tower in the valve tower test circuit; if the direction of the test current is the second direction, the first result is used as the offset to be adjusted of the submodule; the second direction is used to instruct the tested valve tower in the valve tower test circuit to charge the accompanying test valve tower in the valve tower test circuit.

[0282] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0283] The first difference is processed to obtain a second result; if the direction of the test current is the first direction, the negative value of the product of the second result and the preset duty cycle is used as the basic offset; if the direction of the test current is the second direction, the product of the second result and the preset duty cycle is used as the basic offset.

[0284] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0285] For each submodule in the target valve tower, if the direction of the test current is the first direction, the modulation wave of the submodule is determined according to the difference between the basic offset and the offset to be adjusted of the submodule; if the direction of the test current is the second direction, the modulation wave of the submodule is determined according to the sum of the basic offset and the offset to be adjusted.

[0286] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0287] When the target valve tower is the tested valve tower in the valve tower test circuit, each sub-module in the accompanying valve tower in the valve tower test circuit is charged according to the modulation wave of each sub-module in the tested valve tower; when the target valve tower is the accompanying valve tower in the valve tower test circuit, each sub-module in the tested valve tower in the valve tower test circuit is charged according to the modulation wave of each sub-module in the accompanying valve tower.

[0288] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0289] According to the operating number and preset angle of each submodule in the target valve tower, the carrier phase shift of each submodule in the target valve tower is determined; according to the test current, the preset reference current and the carrier phase shift of each submodule in the target valve tower, the modulation wave of each submodule of the target valve tower is determined.

[0290] In one embodiment, a computer program product is provided, comprising a computer program, which, when executed by a processor, implements the following steps:

[0291] Obtain the test current of the valve tower test circuit;

[0292] Determining the modulation wave of each submodule of the target valve tower in the valve tower test circuit according to the test current and the preset reference current;

[0293] Each submodule in the valve tower test circuit is controlled according to the modulation wave.

[0294] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0295] Determine a first difference between the amplitude of the test current and the amplitude of the preset reference current; determine a basic offset of each submodule in the target valve tower based on the first difference, the direction of the test current and the preset duty cycle of the target valve tower; determine a modulation wave of each submodule of the target valve tower based on the basic offset of each submodule in the target valve tower.

[0296] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0297] For each submodule in the target valve tower, the offset to be adjusted of the submodule is determined according to the direction of the test current and the charge state of the submodule; and the modulation wave of the submodule is determined according to the basic offset and the offset to be adjusted of the submodule.

[0298] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0299] Determine an average value of the state of charge of each submodule in the target valve tower; determine a second difference between the average value and the state of charge of the submodule; and determine an offset to be adjusted for the submodule based on the second difference and the direction of the test current.

[0300] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0301] The second difference is processed to obtain a first result; if the direction of the test current is the first direction, the negative value of the first result is used as the offset to be adjusted of the submodule; the first direction is used to instruct the accompanying test valve tower in the valve tower test circuit to charge the tested valve tower in the valve tower test circuit; if the direction of the test current is the second direction, the first result is used as the offset to be adjusted of the submodule; the second direction is used to instruct the tested valve tower in the valve tower test circuit to charge the accompanying test valve tower in the valve tower test circuit.

[0302] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0303] The first difference is processed to obtain a second result; if the direction of the test current is the first direction, the negative value of the product of the second result and the preset duty cycle is used as the basic offset; if the direction of the test current is the second direction, the product of the second result and the preset duty cycle is used as the basic offset.

[0304] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0305] For each submodule in the target valve tower, if the direction of the test current is the first direction, the modulation wave of the submodule is determined according to the difference between the basic offset and the offset to be adjusted of the submodule; if the direction of the test current is the second direction, the modulation wave of the submodule is determined according to the sum of the basic offset and the offset to be adjusted.

[0306] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0307] When the target valve tower is the tested valve tower in the valve tower test circuit, each sub-module in the accompanying valve tower in the valve tower test circuit is charged according to the modulation wave of each sub-module in the tested valve tower; when the target valve tower is the accompanying valve tower in the valve tower test circuit, each sub-module in the tested valve tower in the valve tower test circuit is charged according to the modulation wave of each sub-module in the accompanying valve tower.

[0308] In one embodiment, when the computer program is executed by a processor, the following steps are further implemented:

[0309] According to the operating number and preset angle of each submodule in the target valve tower, the carrier phase shift of each submodule in the target valve tower is determined; according to the test current, the preset reference current and the carrier phase shift of each submodule in the target valve tower, the modulation wave of each submodule of the target valve tower is determined.

[0310] Those skilled in the art will appreciate that all or part of the processes in the above-mentioned embodiment methods can be implemented by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, database or other media used in the embodiments provided in this application may include at least one of non-volatile and volatile memory. Non-volatile memory may include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory may include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in the various embodiments provided herein may include at least one of a relational database and a non-relational database. Non-relational databases may include, but are not limited to, distributed databases based on blockchains. The processor involved in the various embodiments provided herein may be a general-purpose processor, a central processing unit, a graphics processing unit, a digital signal processor, a programmable logic unit, a data processing logic unit based on quantum computing, etc., but are not limited to these.

[0311] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0312] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present application shall be determined by the appended claims.

Claims

1. A control method, wherein: The method comprises: Obtain the test current of the valve tower test circuit; Determining the modulation wave of each submodule of the target valve tower in the valve tower test circuit according to the test current and the preset reference current; Each submodule in the valve tower test circuit is controlled according to the modulation wave.

2. The method according to claim 1, wherein: The step of determining the modulation wave of each submodule of the target valve tower in the valve tower test circuit according to the test current and the preset reference current includes: Determining a first difference between the amplitude of the test current and the amplitude of the preset reference current; Determining a basic offset of each submodule in the target valve tower according to the first difference, the direction of the test current and a preset duty cycle of the target valve tower; According to the basic offset of each submodule in the target valve tower, the modulation wave of each submodule of the target valve tower is determined.

3. The method according to claim 2, wherein: The step of determining the modulation wave of each submodule of the target valve tower according to the basic offset of each submodule in the target valve tower includes: For each submodule in the target valve tower, determining the offset to be adjusted of the submodule according to the direction of the test current and the charge state of the submodule; The modulation wave of the submodule is determined according to the basic offset and the offset to be adjusted of the submodule.

4. The method according to claim 3, wherein: The step of determining the offset to be adjusted of the submodule according to the direction of the test current and the charge state of the submodule includes: Determining an average value of the state of charge of each submodule in the target valve tower; determining a second difference between the average value and the state of charge of the submodule; The offset to be adjusted of the submodule is determined according to the second difference and the direction of the test current.

5. The method according to claim 4, wherein: The step of determining the offset to be adjusted of the submodule according to the second difference and the direction of the test current includes: Processing the second difference to obtain a first result; If the direction of the test current is the first direction, the negative value of the first result is used as the offset to be adjusted of the submodule; the first direction is used to instruct the companion test valve tower in the valve tower test circuit to charge the tested valve tower in the valve tower test circuit; If the direction of the test current is the second direction, the first result is used as the offset to be adjusted of the submodule; the second direction is used to instruct the tested valve tower in the valve tower test circuit to charge the accompanying test valve tower in the valve tower test circuit.

6. The method according to claim 5, wherein: The step of determining the basic offset of each submodule in the target valve tower according to the first difference, the direction of the test current and the preset duty cycle of the target valve tower includes: Processing the first difference to obtain a second result; If the direction of the test current is the first direction, the negative value of the product of the second result and the preset duty cycle is used as the basic offset; If the direction of the test current is the second direction, the product of the second result and the preset duty cycle is used as the basic offset.

7. The method according to claim 5 or 6, wherein: The step of determining the modulation wave of the submodule according to the basic offset and the offset to be adjusted of the submodule comprises: For each submodule in the target valve tower, if the direction of the test current is the first direction, determining the modulation wave of the submodule according to the difference between the basic offset and the offset to be adjusted of the submodule; If the direction of the test current is the second direction, the modulation wave of the submodule is determined according to the sum of the basic offset and the offset to be adjusted.

8. The method according to any one of claims 1 to 7, wherein: The method of controlling each submodule in the valve tower test circuit according to the modulation wave includes: When the target valve tower is a tested valve tower in the valve tower test circuit, charging each submodule in the accompanying test valve tower in the valve tower test circuit according to the modulation wave of each submodule in the tested valve tower; In the case where the target valve tower is a companion test valve tower in the valve tower test circuit, each submodule in the tested valve tower in the valve tower test circuit is charged according to the modulation wave of each submodule in the companion test valve tower.

9. The method according to any one of claims 1 to 7, wherein: The step of determining the modulation wave of each submodule of the target valve tower in the valve tower test circuit according to the test current and the preset reference current includes: Determining the carrier phase shift of each submodule in the target valve tower according to the operating quantity and preset angle of each submodule in the target valve tower; The modulation wave of each submodule of the target valve tower is determined according to the test current, the preset reference current and the carrier phase shift of each submodule in the target valve tower.

10. A control device, wherein: The device comprises: An acquisition module, used for acquiring a test current of a valve tower test circuit; A determination module, used to determine the modulation wave of each submodule of the target valve tower in the valve tower test circuit according to the test current and the preset reference current; A control module is used to control each submodule in the valve tower test circuit according to the modulation wave.

11. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 9 are implemented.

12. A computer-readable storage medium having a computer program stored thereon, wherein: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 9 are implemented.

13. A computer program product comprising a computer program, wherein: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 9 are implemented.

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