Chuck device, film formation device, chucking method, film formation method, and manufacturing method for electronic device

Abstract

Provided is a chuck device characterized by comprising: a support unit that supports a peripheral edge portion of a first main surface of an object to be chucked having the first main surface and a second main surface on the opposite side from the first main surface; a chucking means that attracts the object to be chucked from the second main surface side of the object to be chucked; and a plurality of pressing members that are provided on the chucking means and that are for pressing the object to be chucked from the second main surface side of the object to be chucked, wherein the plurality of pressing members are disposed at positions corresponding to at least two corner portions among a plurality of corner portions of the second main surface of the object to be chucked.

Description

Adsorption apparatus, film formation apparatus, adsorption method, film formation method, and electronic device manufacturing method

[0001] The present invention relates to a suction apparatus, a film-forming apparatus, a suction method, a film-forming method, and a method for manufacturing an electronic device.

[0002] Patent Document 1 discloses a film forming apparatus having a pressing member that is installed on the upper wall of a vacuum chamber and fixed so as to extend downward. In this apparatus configuration, as a substrate supported by a substrate support unit rises, the upper surface of the substrate comes into contact with the pressing member, and the substrate is pressed downward.

[0003] Japanese Patent Application Laid-Open No. 2021-141312

[0004] However, distortion of the vacuum vessel caused by vacuum formation can cause tilting of the electrostatic chuck, etc. Even if the protrusion amount of the pressing member is adjusted in the atmosphere, distortion of the vacuum vessel caused by vacuum formation can cause fluctuations in the protrusion amount of the pressing member installed on the upper wall of the vacuum vessel. Therefore, when the results of adjusting the tilt of the substrate attitude in the atmosphere are applied to tilt adjustment in a vacuum environment, the influence of the tilt caused by vacuum formation can cause an imbalance in the protrusion amount of the pressing member, which can lead to poor adhesion.

[0005] An object of the present invention is to provide a technique that can satisfactorily attract an object to an electrostatic chuck without being affected by distortion of the vacuum vessel caused by forming a vacuum.

[0006] An adsorption device according to one aspect of the present invention comprises a support unit that supports a peripheral portion of a first main surface of an adsorbed body having a first main surface and a second main surface opposite the first main surface; adsorption means that adsorbs the adsorbed body from the second main surface side of the adsorbed body; and a plurality of pressing members that are provided on the adsorption means and that press the adsorbed body from the second main surface side of the adsorbed body, wherein the plurality of pressing members are each arranged at positions corresponding to at least two of a plurality of corners that the second main surface of the adsorbed body has.

[0007] Another aspect of the present invention provides an adsorption device comprising: a support unit that supports a peripheral edge portion of a first main surface of an adsorbate having a first main surface and a second main surface opposite the first main surface; adsorption means that adsorbs the adsorbate from the second main surface side of the adsorbate; and a pressing member that is provided on the adsorption means and presses the adsorbate from the second main surface side of the adsorbate before the adsorption means adsorbs the adsorbate; wherein a support region, which is a region on the first main surface where the support unit supports the adsorbate, and a pressing region, which is a region on the second main surface where the pressing member presses the adsorbate, do not overlap when viewed from a direction perpendicular to the first main surface or the second main surface, and the pressing member is positioned at a position corresponding to a corner of the second main surface of the adsorbate.

[0008] According to the present invention, an object to be attracted can be attracted to an electrostatic chuck in a satisfactory manner without being affected by distortion of the vacuum vessel caused by forming a vacuum.

[0009] It is a schematic diagram of a part of an electronic device manufacturing apparatus. It is a schematic diagram of a film forming apparatus according to one embodiment of the present invention. It is a schematic cross-sectional view of a suction apparatus according to one embodiment of the present invention. It is a schematic plan view of a suction apparatus according to one embodiment of the present invention. It is a schematic plan view of a suction apparatus according to one embodiment of the present invention. It is a diagram showing a suction method according to one embodiment of the present invention. It is a schematic diagram showing an electronic device.

[0010] Preferred embodiments and examples of the present invention will be described below with reference to the drawings. However, the following embodiments and examples merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Furthermore, unless otherwise specified, the hardware and software configurations, processing flows, manufacturing conditions, dimensions, materials, shapes, etc. of the device in the following description are not intended to limit the scope of the present invention to those alone.

[0011] The present invention can be applied to, for example, a film formation apparatus that deposits various materials on the surface of a substrate to form a film, and can be desirably applied to an apparatus that forms a thin film (material layer) of a desired pattern by vacuum deposition.

[0012] The substrate material can be any material such as glass, a polymer film, a metal, or a semiconductor (e.g., silicon). The substrate can be, for example, a silicon wafer or a glass substrate on which a film such as polyimide is laminated. Furthermore, the film-forming material (sometimes referred to as a deposition material in the case of deposition) can be any material such as an organic material or a metallic material (e.g., metal, metal oxide, etc.).

[0013] In the following description, a deposition apparatus will be described as a film formation apparatus. However, the film formation apparatus according to the present invention is not limited to this and may also be a sputtering apparatus or a CVD (Chemical Vapor Deposition) apparatus. Specifically, the technology of the present invention is applicable to various electronic devices such as semiconductor devices, magnetic devices, and electronic components, as well as manufacturing apparatuses for optical components. Specific examples of electronic devices include light-emitting elements, photoelectric conversion elements, and touch panels. The present invention is particularly applicable to manufacturing apparatuses for organic light-emitting elements such as OLEDs and organic photoelectric conversion elements such as organic thin-film solar cells. The electronic device in the present invention also includes display devices (e.g., organic EL display devices) and lighting devices (e.g., organic EL lighting devices) equipped with light-emitting elements, and sensors (e.g., organic CMOS image sensors) equipped with photoelectric conversion elements.

[0014] <Electronic Device Manufacturing Apparatus> FIG. 1 is a plan view schematically showing the configuration of a portion of an electronic device manufacturing apparatus.

[0015] The manufacturing apparatus shown in Fig. 1 is used, for example, to manufacture display panels for organic EL display devices for smartphones. In the case of display panels for smartphones, for example, a 4.5th generation (G4.5) rectangular substrate (approximately 700 mm x approximately 900 mm) or a 6th generation (G6) full-size (approximately 1500 mm x approximately 1850 mm) or half-cut size (approximately 1500 mm x approximately 925 mm) rectangular substrate is subjected to film formation for forming organic EL elements, and then the substrate is cut out to produce multiple smaller panels.

[0016] An electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses 1 and a relay apparatus that connects the plurality of cluster apparatuses 1 together.

[0017] The cluster apparatus 1 includes a plurality of film forming apparatuses 11 that perform processing (e.g., film formation) on substrates S, a plurality of mask stock apparatuses 12 that store masks M before and after use, and a transfer chamber 13 disposed in the center thereof. As shown in FIG. 1 , the transfer chamber 13 is connected to each of the plurality of film forming apparatuses 11 and the mask stock apparatus 12.

[0018] A transfer robot 14 that transfers the substrate S and the mask M is disposed within the transfer chamber 13. The transfer robot 14 transfers the substrate S from a pass chamber 15 of a relay device disposed upstream to the film formation device 11. The transfer robot 14 also transfers the mask M between the film formation device 11 and the mask stock device 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand that holds the substrate S or the mask M is attached to an articulated arm.

[0019] In the film forming apparatus 11 (also referred to as a vapor deposition apparatus), a vapor deposition material stored in an evaporation source is heated by a heater to evaporate, and is then deposited on the substrate S through the mask M. A series of film forming processes, such as transferring the substrate S to and from the transfer robot 14, adjusting the relative positions of the substrate S and the mask M (alignment), fixing the substrate S on the mask M, and film formation (vapor deposition), are performed by the film forming apparatus 11.

[0020] In the mask stock device 12, new masks to be used in the film formation process in the film formation device 11 and used masks are stored in two separate cassettes. The transfer robot 14 transfers the used masks from the film formation device 11 to a cassette in the mask stock device 12, and transfers new masks stored in another cassette in the mask stock device 12 to the film formation device 11.

[0021] The cluster apparatus 1 is connected to two relay devices, one on the upstream side and one on the downstream side in the flow direction of the substrate S. Each relay device has, from upstream to downstream, a buffer chamber 16, a swirl chamber 17, and a pass chamber 15, in this order. That is, the pass chamber 15 is connected to the cluster apparatus 1 on the upstream side, and the other on the downstream side. The pass chamber 15, which is connected to the cluster apparatus 1 on the upstream side (left side in FIG. 1 ) in the flow direction of the substrate S, serves as a chamber for transferring the substrate S from the upstream side to the cluster apparatus 1. The buffer chamber 16, which is connected to the cluster apparatus 1 on the downstream side (right side in FIG. 1 ), serves as a chamber for transferring the substrate S, after film formation processing in the cluster apparatus 1, to another cluster apparatus downstream. A transfer robot 14 in the transfer chamber 13 receives the substrate S from the upstream pass chamber 15 and transfers it to one of the film formation apparatuses 11 (e.g., film formation apparatus 11a) in the cluster apparatus 1. In addition, the transport robot 14 receives the substrate S after the film formation process in the cluster apparatus 1 has been completed from one of the film formation apparatuses 11 (for example, film formation apparatus 11b) and transports it to the buffer chamber 16 connected downstream.

[0022] A turning chamber 17 for changing the orientation of the substrate may be installed between the buffer chamber 16 and the pass chamber 15. The turning chamber 17 is provided with a transfer robot 18 for receiving the substrate S from the buffer chamber 16, rotating the substrate S by 180°, and transferring it to the pass chamber 15. This ensures that the orientation of the substrate S is the same in the upstream cluster device and the downstream cluster device, facilitating substrate processing.

[0023] The pass chamber 15, buffer chamber 16, and swirl chamber 17 are so-called relay devices that connect the cluster devices, and the relay device installed upstream and / or downstream of the cluster device includes at least one of the pass chamber, buffer chamber, and swirl chamber.

[0024] The film forming device 11, the mask stock device 12, the transfer chamber 13, the buffer chamber 16, the swirl chamber 17, etc. are maintained in a high vacuum state during the manufacturing process of the organic light-emitting element. The pass chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state as necessary.

[0025] In this embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1 , but the present invention is not limited thereto. Other types of apparatuses and chambers may be included, and the arrangement of these apparatuses and chambers may be changed. For example, the electronic device manufacturing apparatus may be an inline type rather than a cluster type. That is, the apparatus may have a configuration in which a substrate and a mask are mounted on a carrier and film formation is performed while being transported through a plurality of film formation apparatuses arranged in a row. It may also have a structure that combines a cluster type and an inline type. For example, the processes up to the formation of the organic layer may be performed using a cluster type manufacturing apparatus, and the processes from the film formation of the electrode layer (cathode layer) to the sealing process and cutting process may be performed using an inline type manufacturing apparatus.

[0026] The specific configuration of the film forming apparatus 11 will be described below.

[0027] <Film Forming Apparatus> Figure 2 is a schematic diagram showing the configuration of a film forming apparatus 11. In the following description, an XYZ Cartesian coordinate system is used, with the vertical direction being the Z direction. When a rectangular substrate S is fixed so as to be parallel to a horizontal plane (XY plane) during film formation, the short side direction (direction parallel to the short side) of the substrate S is defined as the X direction, and the long side direction (direction parallel to the long side) is defined as the Y direction. The rotation angle around the Z axis is represented by θ.

[0028] The film forming apparatus 11 includes a vacuum vessel 21 (vessel) maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, and a substrate support unit 22 (support unit), a mask support unit 23, an electrostatic chuck 24 (adsorption means), a magnet plate 31, and an evaporation source 25 (film forming means) provided inside the vacuum vessel 21.

[0029] The substrate supporting unit 22 is a device for receiving and holding the substrate S transferred by the transfer robot 14 provided in the transfer chamber 13, and is also referred to as a substrate holder. In this embodiment, the substrate supporting unit 22 has multiple support portions 22a, which support the peripheral portion of the first main surface (here, the bottom surface) of the rectangular substrate S. For example, the substrate supporting unit 22 supports two opposing sides of the substrate S (a pair of long sides or a pair of short sides in the case of a rectangular substrate) or four sides. Note that the "peripheral portion" in this specification does not necessarily include the peripheral edge. For example, the multiple support portions 22a of the substrate supporting unit 22 may support the substrate S by contacting a portion of the substrate S that is a certain distance from the peripheral edge, rather than contacting the peripheral edge of the bottom surface of the substrate S. Likewise, it goes without saying that the "side portion" in this specification does not necessarily include the side itself.

[0030] A mask support unit 23 is provided below the substrate support unit 22. The mask support unit 23 is a means for receiving and holding the mask M transferred by the transfer robot 14 provided in the transfer chamber 13, and is also called a mask holder. The mask support unit 23 is disposed at a position such that the mask M supported by the mask support unit 23 is disposed between the substrate S supported by the substrate support unit 22 and an evaporation source 25, which is a film forming means.

[0031] The mask M has an opening pattern corresponding to the thin film pattern to be formed on the substrate S, and is placed on the mask support unit 23. In particular, the mask used to manufacture organic EL elements for smartphones is a metal mask with a fine opening pattern formed therein, and is also called an FMM (Fine Metal Mask).

[0032] An electrostatic chuck 24 is provided at a position facing the second main surface of the substrate S supported by the substrate support unit 22 (here, above the substrate support unit 22) as a substrate attracting means or attractable object attracting means for attracting and fixing the substrate S by electrostatic attraction. The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (e.g., ceramic) matrix.

[0033] The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck in which a dielectric having a relatively high resistance is interposed between the electrode and the attracting surface, and attraction is achieved by the Coulomb force between the electrode and the attracting object; a Johnsen-Rahbek force type electrostatic chuck in which a dielectric having a relatively low resistance is interposed between the electrode and the attracting surface, and attraction is achieved by the Johnsen-Rahbek force generated between the attracting surface of the dielectric and the attracting object; or a gradient force type electrostatic chuck in which the attracting object is attracted by a non-uniform electric field.

[0034] When the object to be attracted is a conductor or a semiconductor (silicon wafer), it is preferable to use a Coulomb force type electrostatic chuck or a Johnsen-Rahbek force type electrostatic chuck, and when the object to be attracted is an insulator such as glass, it is preferable to use a gradient force type electrostatic chuck.

[0035] The electrostatic chuck 24 may be formed of a single plate or may be formed to have multiple sub-plates. Even if the electrostatic chuck 24 is formed of a single plate, it may include multiple electric circuits therein to control the electrostatic attractive force to vary depending on the position within the single plate.

[0036] In this embodiment, an electrostatic chuck will be mainly described as a substrate attracting means, but the present invention is not limited to this, and an adhesive chuck that attracts a substrate by adhesive force may also be used.

[0037] The film forming apparatus 11 according to this embodiment further includes a substrate pressing mechanism 300 (attached object pressing mechanism) that drives a pressing member 30 for pressing corners of the substrate S supported by the substrate support unit 22 from the upper surface side (second main surface side) of the substrate S. For this purpose, the electrostatic chuck 24 may be formed with a hole 24a (opening) through which the pressing member 30 can pass. The chucking device 110 for the substrate S including the pressing member 30 and the chucking method using the chucking device 110 will be described later. Note that the corners of the substrate S do not have to be "corners" in the strict mathematical sense, and may be rounded corners obtained by, for example, R processing or the like.

[0038] Although not shown in FIG. 2 , a cooling mechanism (e.g., a cooling plate) for suppressing a temperature rise of the substrate S may be provided on the side opposite the attracting surface of the electrostatic chuck 24, thereby suppressing alteration or deterioration of the organic material deposited on the substrate S.

[0039] A magnet plate 31 is provided above the electrostatic chuck 24 to apply a magnetic force to the metal mask M to attract the mask and bring the mask M into close contact with the substrate S. The magnet plate 31 has a permanent magnet or an electromagnet, and applies a magnetic force to the mask M via the electrostatic chuck 24 and the substrate S. The magnet plate 31 may be divided into a plurality of modules that are arranged side by side when viewed from a direction perpendicular to the attracting surface of the electrostatic chuck 24. The magnet plate 31 may also be formed integrally with a cooling plate, which will be described later.

[0040] The evaporation source 25 includes a crucible (not shown) that stores an evaporation material to be deposited on the substrate S, a heater (not shown) for heating the crucible, and a shutter (not shown) that prevents the evaporation material from scattering onto the substrate S until the evaporation rate from the evaporation source becomes constant. The evaporation source 25 may have various configurations depending on the application, such as a point evaporation source, a linear evaporation source, or a planar evaporation source.

[0041] 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the thickness of the film deposited on the substrate S. A quartz crystal monitor including a quartz crystal oscillator can be used as the film thickness monitor.

[0042] A distance adjustment unit 27, a position adjustment mechanism 29, and the like are provided on the upper outside (atmosphere side) of the vacuum vessel 21. The distance adjustment unit 27 adjusts the distance between the electrostatic chuck 24 and the substrate support unit 22 and the mask support unit 23 by raising and lowering them (moving them in the Z direction), thereby moving the substrate S and the mask M closer to or further apart in the thickness direction (Z direction) of the substrate S. The distance adjustment unit 27 raises the substrate S (attachment target) supported by the substrate support unit 22 toward the electrostatic chuck 24, thereby adjusting the distance between the substrate S (attachment target) supported by the substrate support unit 22 and the electrostatic chuck 24. The distance adjustment unit 27 and the position adjustment mechanism 29 are configured, for example, with a motor and a ball screw or a motor and a linear guide, but the present invention is not limited to this configuration and other configurations known in the art may also be employed. The pressing member 30 presses the upper surface (second main surface) of the substrate S (attachment target) adjusted by the distance adjustment unit 27.

[0043] The position adjustment mechanism 29 is a driving means for aligning the electrostatic chuck 24. The position adjustment mechanism 29 moves the entire electrostatic chuck 24 in the X direction, the Y direction, and rotates it by θ relative to the substrate support unit 22 and the mask support unit 23. In this embodiment, alignment is performed to adjust the relative positions of the substrate S and the mask M by adjusting the position of the electrostatic chuck 24 in the X, Y, and θ directions while the substrate S is attracted to the electrostatic chuck 24.

[0044] In addition to the driving mechanism described above, an alignment camera 20 may be installed on the outer upper surface of the vacuum vessel 21 to photograph alignment marks formed on the substrate S and mask M through a transparent window provided on the upper surface of the vacuum vessel 21. In this embodiment, the alignment camera 20 may be installed at positions corresponding to two diagonal corners of the rectangular substrate S, mask M, and electrostatic chuck 24, or at positions corresponding to four corners of the rectangle, or at the centers of two opposing sides.

[0045] The alignment camera 20 installed in the film formation apparatus 11 of this embodiment is a fine alignment camera used to adjust the relative position between the substrate S and the mask M with high precision, and is a camera with a narrow viewing angle but high resolution. In addition to the alignment camera 20 (fine alignment camera), the film formation apparatus 11 may also have a rough alignment camera with a relatively wide viewing angle and low resolution.

[0046] The position adjustment mechanism 29 performs alignment by moving the substrate S and the mask M relative to each other to adjust their positions based on the position information of the substrate S and the mask M acquired by the alignment camera 20 .

[0047] The film forming apparatus 11 includes a control device 32. The control device 32 has functions such as controlling the transport and alignment of the substrate S and mask M (controlling each moving mechanism), controlling the evaporation source 25, and controlling film formation.

[0048] In particular, the control device 32 according to this embodiment functions as an adsorption control means that controls the raising and lowering of the substrate support unit 22 and the electrostatic chuck 24 by the distance adjustment unit 27 during the adsorption operation of the substrate S by the electrostatic chuck 24. The control device 32 can control the raising and lowering of the substrate S and the electrostatic chuck 24 during the process of pressing the substrate S by the pressing member 30 and adsorbing the substrate S to the electrostatic chuck 24. However, the present invention is not limited to this, and an adsorption control means may be provided separately from the control device of the film formation apparatus 11.

[0049] The controller 32 may also be capable of controlling the application of voltage to the electrostatic chuck 24, as will be described below with reference to FIG.

[0050] The control device 32 can be configured, for example, by a computer having a processing unit 32b (processor), a memory unit 32c (memory, storage), a communication interface 32a (communication IF), and the like. In this case, the functions of the control device 32 are realized by the processor executing a program stored in the memory or storage. The computer may be a general-purpose personal computer, an embedded computer, or a PLC (programmable logic controller). Alternatively, some or all of the functions of the control device 32 may be configured by a circuit such as an ASIC or FPGA. Furthermore, a control device 32 may be installed for each film formation apparatus 11, or one control device 32 may be configured to control multiple film formation apparatuses 11.

[0051] <Chuck Device> FIG. 3 is a cross-sectional schematic diagram showing the configuration of a chucking device 110 according to one embodiment of the present invention. The following description of the chucking device according to this embodiment assumes a rectangular substrate, but the present invention is not limited to this. In this embodiment, an example in which the chucking device 110 is applied to a film formation apparatus 11 is described. However, the present invention is not limited to this example. The configuration of the chucking device 110 can also be applied to an apparatus in a vacuum chamber (e.g., the pass chamber 15 or the buffer chamber 16) in which a process of chucking a substrate S using an electrostatic chuck 24 is performed. For example, when a measurement of the film thickness of a film formed on a substrate S by the film formation apparatus 11 is performed, for example, in a vacuum chamber downstream of the film formation apparatus 11, the chucking device 110 according to this embodiment can also be applied to such an apparatus.

[0052] 3, the chucking device 110 includes a substrate support unit 22 including a support portion 22a, an electrostatic chuck 24 for attracting a substrate S, and a substrate pressing mechanism 300 (attached object pressing mechanism) provided on the electrostatic chuck 24. In FIG. 3, a holding member 303 for holding the substrate pressing mechanism 300 on the electrostatic chuck 24 is provided on a surface 24b opposite to the attracting surface 24c of the electrostatic chuck 24. A driving source 301, such as a vacuum motor, for generating a rotational driving force (rotation) is attached to a flange 303a of the holding member 303. The driving source 301 generates rotation for moving the pressing member 300 in the Z direction (vertical direction).

[0053] The connecting member 302 may be configured, for example, by a coupling, and the transmission mechanism 304 may be configured, for example, by a ball screw. The connecting member 302 connects the rotation axis of the driving source 301 and the shaft (screw axis) of the transmission mechanism 304. The transmission mechanism 304 transmits the rotation generated by the driving source 301 to the conversion unit 30c.

[0054] The conversion unit 30c connected to the transmission mechanism 304 is provided with a conversion mechanism (for example, a nut) that converts the rotation (rotational movement) transmitted by the transmission mechanism 304 into translational movement (linear movement).

[0055] The pressing member 30 moves in the Z direction (vertical direction) based on the translational movement converted by the conversion unit 30 c. By changing the rotation direction of the drive source 301, it is possible to raise (move vertically upward) or lower (move vertically downward) the pressing member 30.

[0056] For example, the driving source 301 generates a rotation in a first direction to move the pressing member 30 vertically downward (downward in the Z-axis direction), and as the pressing member 30 moves vertically downward based on the rotation in the first direction transmitted by the transmission mechanism 304, the end of the pressing member 30 protrudes from the adsorption surface 24c of the electrostatic chuck 24 that adsorbs the second main surface side of the substrate S (adsorbed object) (for example, ST32 in FIG. 3).

[0057] In addition, the driving source generates rotation in a second direction (the opposite direction to the first direction) to move the pressing member 30 vertically upward (upward in the Z-axis direction), and as the pressing member 30 moves vertically upward based on the rotation in the second direction transmitted by the transmission mechanism 304, the end of the pressing member 30 protruding from the adsorption surface 24c of the electrostatic chuck 24 retracts so as not to protrude from the adsorption surface 24c of the electrostatic chuck 24 (for example, ST31 in Figure 3).

[0058] In order to protect the substrate S, the pressing member 30 may be made of a resin material such as Teflon (registered trademark), polyether ether ketone (PEEK), or polyimide. Alternatively, the pressing member 30 may be mainly made of a metal material such as stainless steel, and the surface of the metal material may be coated with a resin material such as Teflon (registered trademark), PEEK, polyimide, or DLC (Diamond-Like Carbon). In addition, in order to suppress the generation of static electricity, a conductive coating may be applied to the surface of the resin material.

[0059] The electrostatic chuck 24 is provided with holes 24a (openings) through which the pressing members 30 can pass so that the pressing members 30 can press the substrate S through the electrostatic chuck 24. To allow the pressing members 30 to pass through, the holes 24a are formed at positions corresponding to the positions of the pressing members 30, i.e., the pressing regions of the substrate S. The number of holes 24a preferably corresponds to the number of pressing members 30.

[0060] A detection sensor 30b, which may be configured as a touch sensor or a pressure sensor, is provided at an end of the pressing member 30. The detection sensor 30b detects contact of the substrate S (attached object) with the upper surface (second main surface) of the substrate S. The detection sensor 30b can transmit detection information by wireless communication, and the detection information detected by the detection sensor 30b is input to the control device 32 via a communication interface 32a (communication IF). The communication interface 32a (communication IF) can receive information from various sensors provided in the film forming device and the adsorption device.

[0061] Based on the detection information transmitted from the detection sensor 30b, the control device 32 controls the rotation speed and rotation direction of the drive source 301. The control device 32 controls the vertical movement amount of the pressing member 30 by controlling the rotation speed of the drive source 301, and controls the movement direction of the pressing member 30 by controlling the rotation direction of the drive source 301. In other words, the control device 32 controls the movement of the pressing member 30 vertically upward or vertically downward by controlling the rotation direction of the drive source 301.

[0062] By controlling the vertical movement amount of the pressing member 30, it is possible to adjust the amount of protrusion or pressing force of the pressing member 30 from the attracting surface 24c of the electrostatic chuck 24. The substrate pressing mechanism 300 moves the pressing member 30 in the Z direction (vertical direction) to press downward against the corners of the substrate S supported by the support portion 22a of the substrate support unit 22. When multiple substrate pressing mechanisms 300 are provided in the electrostatic chuck 24, the control device 32 can adjust the amount of protrusion or pressing force of each pressing member 30 by controlling the rotation speed and rotation direction of the drive source 301 of each substrate pressing mechanism 300.

[0063] Distortion of the vacuum vessel 21 (chamber) caused by vacuum formation can cause tilting of the electrostatic chuck 24, etc. Therefore, when the results of adjusting the tilt of the substrate attitude in the atmosphere are applied to tilt adjustment in a vacuum environment, the influence of tilt caused by vacuum formation can cause an imbalance in the protrusion amount of the pressing member 30, which can lead to poor adhesion. The substrate pressing mechanism 300 of this embodiment can adjust the tilt of the attitude of the substrate S in a vacuum environment. Therefore, the tilt of the attitude of the substrate S can be adjusted without being affected by distortion of the vacuum vessel 21 caused by vacuum formation.

[0064] The control device 32 changes the setting of the range (stroke) within which the pressing member 30 can move in the vertical direction depending on the content of the process. The stroke setting depending on the content of the process can be stored in advance in the storage unit 32c. By changing the stroke depending on the content of the process, the substrate pressing mechanism 300 can be applied to various situations (processes).

[0065] When the substrate S (attachment target) is attracted to the electrostatic chuck 24, the control device 32 moves the pressing member 30 in the vertical direction within a first movement amount range to adjust the tilt of the attitude of the substrate S. When the control device 32 peels the substrate S (attachment target) from the electrostatic chuck 24 in the event of a dechucking error or the like, the control device 32 moves the pressing member 30 in the vertical direction within a second movement amount range that is wider than the first movement amount range.

[0066] The range of the first movement amount (first stroke) may be, for example, about 5 mm to adjust the tilt of the attitude of the substrate S. Furthermore, the range of the second movement amount (second stroke) may be, for example, about 50 mm to apply to the case where the substrate S is forcibly removed from the electrostatic chuck 24 when a dechucking error occurs.

[0067] 3 shows a configuration example in which the substrate pressing mechanism 300 is provided on the surface 24b opposite to the attracting surface 24c of the electrostatic chuck 24, but is not limited to this example. For example, if the electrostatic chuck 24 has a sufficient thickness, the substrate pressing mechanism 300 may be disposed inside the electrostatic chuck 24.

[0068] The chucking device 110 may further include a distance adjustment unit 27 for raising and lowering the substrate support unit 22 and the electrostatic chuck 24. The chucking operation of the electrostatic chuck 24 in the chucking device 110 to chucking the substrate S may be controlled by a chucking control unit. The chucking control unit may be implemented as one functional unit of the control device of the film forming apparatus 11, or may be implemented as a separate control device.

[0069] The substrate supporting unit 22 is an example of an object supporting unit for supporting an object to be attracted, that is, a substrate S. The peripheral edge portion of the first main surface (bottom surface in FIG. 3 ) of the substrate supporting unit 22 is supported by a supporting portion 22 a of the substrate supporting unit 22.

[0070] The substrate S, whose peripheral edge portion of the bottom surface is supported by the support portion 22a of the substrate support unit 22, begins to bend downward at its center due to its own weight, etc. As a result, the peripheral portion of the substrate S is supported by being in partial contact with the upper surface of the support portion 22a, and as it approaches the peripheral edge of the substrate S, it begins to float up and separate from the upper surface of the support portion 22a.

[0071] The electrostatic chuck 24 is installed above the support portion 22a of the substrate support unit 22 and serves as a substrate attracting means for attracting and fixing the substrate S by electrostatic attraction. A predetermined voltage is applied to the electrostatic chuck 24 to induce the electrostatic attraction. According to the present embodiment, the specific method for applying the voltage to the electrostatic chuck 24 is not particularly limited. For example, the voltage may be applied to the entire electrostatic chuck 24 simultaneously, or the voltage may be applied sequentially to multiple electrode portions or attracting portions of the electrostatic chuck 24.

[0072] According to this embodiment, the electrostatic chuck 24 attracts the substrate S, which is pressed by a pressing member 30 (described later), from the upper surface side (second main surface side) of the substrate S. In this embodiment, the substrate S is pressed by the pressing member 30 before a predetermined voltage is applied to the electrostatic chuck 24 to attract the substrate S. This allows the central portion of the substrate S, which has been bent downward due to its own weight, to be lifted, and the substrate S can be attracted to the electrostatic chuck 24 with the degree of bending reduced or eliminated. This not only shortens the time required for attraction but also prevents wrinkles from remaining in the substrate S attracted to the electrostatic chuck 24. It is also possible to reduce the voltage applied to the electrostatic chuck 24.

[0073] The pressing member 30 presses the substrate S from above by having one end thereof come into contact with the second main surface (top surface in FIG. 3 ) of the substrate S. In this embodiment, the pressing region where the pressing member 30 presses the top surface of the substrate S is located, for example, at a corner of the substrate S. Therefore, the pressing member 30 is installed at a position corresponding to the corner of the rectangular substrate S supported by the substrate support unit 22. More specifically, the pressing region of the pressing member 30 is located at at least two of the four corners of the substrate S.

[0074] 4a and 4b are schematic plan views of the suction device 110, each showing the position of the pressing area 30a pressed by the pressing member 30. FIG.

[0075] 4a, the pressing members 30 may be installed at positions corresponding to a pair of diagonally opposite corners of the four corners of the rectangular substrate S. In this way, it is possible to effectively press the substrate S while minimizing the number of pressing members 30.

[0076] 4b, the pressing members 30 may be installed at positions corresponding to all four corners of the rectangular substrate S. In this way, by pressing two or four corners of the substrate S from above with the pressing members 30, the warped central portion of the substrate S can be lifted, reducing the degree of downward warping or making the substrate substantially flat. In particular, by pressing the corners far away from the central portion where warping is most severe with the pressing members 30, warping of the central portion of the substrate S can be effectively reduced.

[0077] 4a or 4b, the pressing member 30 is provided at a corner of the substrate S, so that the pressing area (30a, for example, a corner) by the pressing member 30 does not overlap, when viewed in the vertical direction (i.e., the direction perpendicular to the substrate surface), with the support area (for example, a side) where the substrate S is supported by the support portion 22a of the substrate support unit 22. Therefore, the pressing member 30 can sufficiently press the substrate S without being restricted by the support portion 22a.

[0078] The projection area obtained by vertically projecting the support area supported by the substrate support unit 22 onto the upper surface of the substrate S and the pressing area 30a pressed by the pressing member 30 are aligned along a virtual line L (see Figure 4b) that forms a shape similar to the periphery of the lower surface of the substrate S (e.g., a rectangle).

[0079] According to one aspect of the present embodiment, a plurality of substrate pressing mechanisms 300 are provided in the electrostatic chuck 24, and the control device 32 can adjust the protrusion amount or pressing force of each pressing member 30 by controlling the rotation speed and rotation direction of the drive source 301 of each substrate pressing mechanism 300. The substrate pressing mechanisms 300 of the present embodiment can adjust the tilt of the attitude of the substrate S in a vacuum environment. Therefore, the tilt of the attitude of the substrate S can be adjusted without being affected by distortion of the vacuum vessel 21 caused by vacuum formation.

[0080] [Chucking Method] Next, a chucking method according to one embodiment of the present invention will be described. The chucking method according to this embodiment includes at least (1) a supporting step of supporting the substrate S, which is the object to be chucking, by the substrate supporting unit 22, (2) a pressing step of pressing the substrate S, which is the object to be chucking, by the pressing member 30, and (3) a chucking step of chucking the substrate S, which is the object to be chucking, by the electrostatic chuck 24. Each step will be described in detail below with reference to the drawings.

[0081] <Substrate Supporting Step> In this step, the peripheral portion of the first main surface (here, the film formation surface) of the substrate S, which is an object to be attracted, is supported by the substrate supporting unit 22. In this embodiment, the substrate S is arranged so that the film formation surface faces vertically downward, and the peripheral portion of the film formation surface of the substrate S is supported from below by the substrate supporting unit 22. Referring to ST51 in FIG. 5 , the substrate S, which is an object to be attracted and has been carried into the film formation apparatus 11, is supported in a support region by the support portion 22a of the substrate supporting unit 22. At this time, the pressing member 30, the electrostatic chuck 24, and the substrate S are spaced apart. As shown in the figure, the center portion of the substrate S is bent downward due to its own weight. In addition, before the substrate S is adsorbed by the electrostatic chuck 24, in order to press the pressing area on the upper surface of the substrate S with the pressing member 30, the distance adjustment unit 27 raises the substrate S (attached object) supported by the substrate support unit 22 toward the electrostatic chuck 24, thereby adjusting the distance between the substrate S (attached object) supported by the support portion 22a of the substrate support unit 22 and the electrostatic chuck 24.

[0082] <Pressing Step> In this step, the pressing member 30 presses the substrate S, which is the object to be attracted, from its second main surface (here, the surface opposite to the film formation surface). The substrate pressing mechanism 300 moves the pressing member 30 vertically downward, and the pressing member 30 penetrates the hole 24a provided in the electrostatic chuck 24. The end of the pressing member 30 protrudes from the attracting surface 24c of the electrostatic chuck 24. When the substrate support unit 22 continues to rise due to the operation of the distance adjustment unit 27, the upper surface (second main surface) of the substrate S comes into contact with the pressing member 30 (ST52 in FIG. 5 ).

[0083] In each of the multiple substrate pressing mechanisms 300, the respective detection sensors 30b detect contact with the upper surface (second main surface) of the substrate S. Detection information by each detection sensor 30b is transmitted to the control device 32. The detection information transmitted by the detection sensor 30b includes an identification signal for identifying whether contact is present or absent. As an example of the identification signal, for example, when the detection sensor 30b and the upper surface (second main surface) of the substrate S are not in contact (non-contact state), detection information including an identification signal "0" is transmitted. For example, when the detection sensor 30b and the upper surface (second main surface) of the substrate S are in contact (contact state), detection information including an identification signal "1" is transmitted.

[0084] Based on the detection information transmitted from each detection sensor 30b, the control device 32 determines whether or not the detection sensor 30b is in contact with the upper surface (second main surface) of the substrate S. If the identification signals of the detection information transmitted from all of the detection sensors 30b indicate a contact state, the control device 32 determines that the substrate S (attached object) supported by the substrate supporting unit 22 is supported in a non-tilted state.

[0085] On the other hand, if the detection information transmitted from the plurality of detection sensors 30b includes an identification signal indicating a contact state and an identification signal indicating a non-contact state, the control device 32 determines that the substrate S (attached object) supported by the substrate support unit 22 is supported in an inclined state. The control device 32 identifies the detection sensor 30b that transmitted the detection signal indicating the non-contact state, and adjusts the position of the substrate support unit 22 on the side of the identified detection sensor 30b. The control device 32 controls the distance adjustment unit 27 to raise the substrate support unit 22 to a position where the detection sensor 30b that transmitted the detection signal indicating the non-contact state transmits a detection signal indicating the contact state.

[0086] With the upper surface of the substrate S in contact with the detection sensor 30b, i.e., with the substrate S (attached object) not tilted, the control device 32 controls the drive sources 301 of each substrate pressing mechanism 300 to move the pressing members 30 vertically downward and press the corners of the upper surface (second main surface) of the substrate S. In this step, at least two of the four corners of the rectangular substrate S, and preferably two opposing corners or all four corners, are pressed. As a result, the central portion of the bent substrate S is lifted, thereby reducing the bending.

[0087] <Attraction Step> In this step, the substrate S (attached object) is attracted from the upper surface (second main surface) side of the substrate S (attached object) pressed by the pressing member 30. As described above, in the pressing step, the substrate S is pressed by the pressing member 30, thereby reducing the bending of the substrate S by the pressing member 30. While maintaining the state in which the substrate S is pressed by the pressing member 30, the control device 32 controls the drive source 301 and the distance adjustment unit 27 of the substrate pressing mechanism to raise the pressing member 30 and the substrate support unit 22 and bring the substrate S closer to the electrostatic chuck 24. In this state, as shown in ST53, a predetermined voltage ΔV is applied to the electrostatic chuck 24, so that the substrate S pressed by the pressing member 30 is attracted by the electrostatic chuck 24.

[0088] Note that the substrate S may be brought close to the electrostatic chuck 24 after a predetermined voltage has been applied to the electrostatic chuck 24. The attraction step (ST53) may also be started before the pressing step (ST52) is completed.

[0089] According to this embodiment, the substrate S, which has been pressed by the pressing member 30 and has its deflection reduced, is attracted to the electrostatic chuck 24, thereby shortening the time required for attraction and shortening the process time. Furthermore, since the substrate S is attracted with its deflection due to its own weight reduced, wrinkles are prevented from remaining on the substrate S after it has been attracted to the electrostatic chuck 24 (i.e., the substrate S is attracted to the electrostatic chuck over a wider area), thereby preventing a decrease in the accuracy of the film formation process. It is also possible to reduce the magnitude of the voltage ΔV applied to the electrostatic chuck 24. In particular, by pressing corners far from the center of the substrate S, deflection in the central portion can be more effectively reduced.

[0090] [Film Forming Process] A film forming method employing the adsorption method according to this embodiment will be described below.

[0091] With the mask M placed on the mask support unit 23 inside the vacuum vessel 21 , the substrate S is carried into the vacuum vessel 21 of the film forming apparatus 11 by the transfer robot 14 in the transfer chamber 13 .

[0092] The hand of the transfer robot 14 that has entered the vacuum chamber 21 places the substrate S on the support portion 22 a of the substrate support unit 22 (substrate supporting step). In order to press a pressing region on the upper surface of the substrate S with the pressing member 30 before the substrate S is attracted by the electrostatic chuck 24, the distance adjustment unit 27 raises the substrate S (attached object) supported by the substrate support unit 22 toward the electrostatic chuck 24, thereby adjusting the distance between the substrate S (attached object) supported by the support portion 22 a of the substrate support unit 22 and the electrostatic chuck 24.

[0093] Next, the substrate support unit 22 is raised, and the corners of the substrate S are pressed by the pressing members 30 (pressing step). The control device 32 adjusts the tilt of the substrate S (attached object) based on the detection information of the detection sensor 30b. When the upper surface of the substrate S is in contact with the detection sensor 30b, i.e., when the substrate S (attached object) is not tilted, the control device 32 controls the drive sources 301 of each substrate pressing mechanism 300 to move the pressing members 30 vertically downward and press the corners of the upper surface (second main surface) of the substrate S.

[0094] Next, while maintaining the state in which the substrate S is pressed by the pressing member 30, the control device 32 controls the drive source 301 of the substrate pressing mechanism and the distance adjustment unit 27 to raise the pressing member 30 and the substrate support unit 22 and bring the substrate S closer to the electrostatic chuck 24. In this state, a predetermined voltage ΔV is applied to the electrostatic chuck 24, so that the substrate S pressed by the pressing member 30 is attracted to the electrostatic chuck 24.

[0095] In order to measure the relative positional deviation of the substrate S with respect to the mask M while the substrate S is attracted to the electrostatic chuck 24, the control device 32 lowers the electrostatic chuck 24 to which the substrate S is attracted.

[0096] When the substrate S is lowered to the alignment measurement position, the alignment camera 20 photographs the alignment marks formed on the substrate S and the mask M, and the relative positional deviation between the substrate S and the mask M is measured.

[0097] If the measurement reveals that the relative positional deviation of the substrate S with respect to the mask M exceeds the threshold, the substrate S attracted to the electrostatic chuck 24 is moved in the horizontal direction (X, Y, and θ directions) by the position adjustment mechanism 29 to adjust (align) the position of the substrate S with respect to the mask M. This process of adjusting the relative position of the substrate S with respect to the mask M can be repeated until the relative positional deviation falls within the threshold.

[0098] When the relative positional deviation between the substrate S and the mask M falls within a predetermined threshold, the electrostatic chuck 24 is lowered toward the mask M to bring the substrate S and the mask M into close contact with each other (contact step). At this time, to bring the substrate S and the mask M into close contact with each other, a voltage capable of attracting the mask M through the substrate S may be applied to the electrostatic chuck 24, or a magnet plate 31 may be lowered onto the upper surface of the electrostatic chuck 24, thereby attracting the metal mask M onto the substrate S.

[0099] Next, the shutter of the evaporation source 25 is opened, and the evaporation material is evaporated onto the substrate S through the mask M (film formation step). Note that, although the case where the evaporation material is evaporated or sublimated and evaporated onto the substrate S has been described here, the present invention is not limited to this, and film formation may be performed by other film formation methods such as sputtering.

[0100] After deposition to a desired thickness, the substrate S and the mask M are separated.

[0101] The hand of the transfer robot 14 enters the vacuum chamber 21 of the film forming apparatus 11, and a voltage of zero (0) or reverse polarity is applied to the electrode portion of the electrostatic chuck 24, causing the electrostatic chuck 24 to separate from the substrate S and rise. Thereafter, the substrate S on which deposition has been completed is carried out of the vacuum chamber 21 by the transfer robot 14.

[0102] In the above description, the film forming apparatus 11 is configured as a so-called upward deposition method (depo-up) in which film formation is performed with the film formation surface of the substrate S facing vertically downward, but this is not limited to this, and the film may also be configured in such a way that the substrate S is placed vertically on the side of the vacuum container 21 and film formation is performed with the film formation surface of the substrate S parallel to the direction of gravity.

[0103] <Method for Manufacturing an Electronic Device> Next, an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment will be described. Hereinafter, the configuration and manufacturing method of an organic EL display device will be illustrated as an example of the electronic device.

[0104] First, the organic EL display device to be manufactured will be described. Fig. 6A shows an overall view of an organic EL display device 60, and Fig. 6B shows a cross-sectional structure of one pixel.

[0105] As shown in FIG. 6A, a display area 61 of an organic EL display device 60 includes a matrix of pixels 62, each including a plurality of light-emitting elements. As will be described in detail later, each light-emitting element has a structure including an organic layer sandwiched between a pair of electrodes. Note that the term "pixel" as used herein refers to the smallest unit capable of displaying a desired color in the display area 61. In the organic EL display device according to this embodiment, each pixel 62 is configured by a combination of a first light-emitting element 62R, a second light-emitting element 62G, and a third light-emitting element 62B, each of which emits light different from one another. While the pixel 62 is often configured by a combination of red, green, and blue light-emitting elements, it may also be a combination of yellow, cyan, and white light-emitting elements, and is not particularly limited as long as it emits at least one color. Furthermore, each light-emitting element may be configured by stacking multiple light-emitting layers.

[0106] Alternatively, the pixel 62 may be configured with a plurality of light-emitting elements that emit the same light, and a color filter may be used in which a plurality of different color conversion elements are arranged in a pattern corresponding to the respective light-emitting elements, thereby enabling one pixel to display a desired color in the display region 61. For example, the pixel 62 may be configured with at least three white light-emitting elements, and a color filter may be used in which red, green, and blue color conversion elements are arranged corresponding to the respective light-emitting elements. Alternatively, the pixel 62 may be configured with at least three blue light-emitting elements, and a color filter may be used in which red, green, and colorless color conversion elements are arranged corresponding to the respective light-emitting elements. In the latter case, by using a quantum dot color filter (QD-CF) using a quantum dot (QD) material as the material for the color filter, the display color gamut can be wider than that of a typical organic EL display device that does not use a quantum dot color filter.

[0107] 6b in FIG. 6 is a partial cross-sectional schematic diagram taken along line A-B in 6a in FIG. 6. A pixel 62 includes an organic EL element on a substrate S, the organic EL element including an anode 64, a hole transport layer 65, one of light-emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a cathode 68. Of these, the hole transport layer 65, the light-emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to organic layers. In this embodiment, the light-emitting layer 66R is an organic EL layer that emits red light, the light-emitting layer 66G is an organic EL layer that emits green light, and the light-emitting layer 66B is an organic EL layer that emits blue light. When using color filters or quantum dot color filters as described above, the color filters or quantum dot color filters are disposed on the light-emitting side of each light-emitting layer, i.e., above or below 6b in FIG. 6, but are not shown.

[0108] The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively. The anode 64 is formed separately for each light-emitting element. The hole transport layer 65, electron transport layer 67, and cathode 68 may be formed in common with the plurality of light-emitting elements 62R, 62G, and 62B, or may be formed for each light-emitting element. An insulating layer 69 is provided between the anodes 64 to prevent short-circuiting between the anode 64 and the cathode 68 due to foreign matter. Furthermore, because the organic EL layer deteriorates due to moisture and oxygen, a protective layer 70 is provided to protect the organic EL elements from moisture and oxygen.

[0109] 6B, the hole transport layer 65 and the electron transport layer 67 are shown as a single layer, but they may be formed of multiple layers including a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display element. Furthermore, a hole injection layer having an energy band structure that allows smooth injection of holes from the anode 64 to the hole transport layer 65 can also be formed between the anode 64 and the hole transport layer 65. Similarly, an electron injection layer can also be formed between the cathode 68 and the electron transport layer 67.

[0110] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0111] First, a substrate S on which a circuit (not shown) for driving the organic EL display device and an anode 64 are formed is prepared.

[0112] An acrylic resin is formed by spin coating on the substrate S on which the anode 64 is formed, and the acrylic resin is patterned by lithography so as to form an opening in the area where the anode 64 is formed, thereby forming an insulating layer 69. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0113] The substrate S on which the insulating layer 69 has been patterned is carried into a first organic material film forming apparatus, and the substrate S is held by an electrostatic chuck. The hole transport layer 65 is formed as a common layer on the anode 64 in the display area. The hole transport layer 65 is formed by vacuum deposition. In practice, the hole transport layer 65 is formed to be larger than the display area 61, so a high-resolution mask M is not required.

[0114] Next, the substrate S on which the hole transport layer 65 has been formed is carried into a second organic material film forming apparatus and held by an electrostatic chuck. The substrate S and the mask M are aligned and brought into close contact with each other, and then a red light-emitting layer 66R is formed on the portion of the substrate S where the red light-emitting element is to be disposed.

[0115] Similar to the formation of the light-emitting layer 66R, a green-emitting light-emitting layer 66G is formed by a third organic material film-forming apparatus, and then a blue-emitting light-emitting layer 66B is formed by a fourth organic material film-forming apparatus. After the formation of the light-emitting layers 66R, 66G, and 66B is completed, an electron transport layer 67 is formed over the entire display area 61 by a fifth film-forming apparatus. The electron transport layer 67 is formed as a layer common to the three light-emitting layers 66R, 66G, and 66B.

[0116] The substrate on which the electron transport layer 67 has been formed is moved in a metallic evaporation material deposition device, and a cathode 68 is deposited.

[0117] According to the present invention, before the substrate is attracted and held by the electrostatic chuck 24, the corners of the upper surface of the substrate S are pressed by the pressing member 30, thereby reducing the bending of the central portion of the substrate S.

[0118] Thereafter, the substrate is transferred to a plasma CVD device, where a protective layer 70 is formed, and the organic EL display device 60 is completed.

[0119] If the substrate S on which the insulating layer 69 has been patterned is exposed to an atmosphere containing moisture or oxygen from the time it is carried into the film-forming apparatus until the completion of the formation of the protective layer 70, the light-emitting layer made of the organic EL material may be deteriorated by the moisture or oxygen. Therefore, in this example, the substrate is carried in and out of the film-forming apparatus in a vacuum atmosphere or an inert gas atmosphere.

[0120] The above embodiment represents one example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of the technical concept thereof.

[0121] This application claims priority based on Japanese Patent Application No. 2023-202138, filed November 29, 2023, the entire contents of which are incorporated herein by reference.

[0122] 11: film forming device, 21: vacuum vessel, 22: substrate support unit, 23: mask support unit, 24: electrostatic chuck, 24a: hole, 24b: block member, 27: distance adjustment unit, 30: pressing member, 31: magnet plate, 32: control device, 110: suction device, 300: substrate pressing mechanism

Claims

1. An adsorption device comprising: a support unit that supports the peripheral portion of an adsorbed body having a first main surface and a second main surface opposite the first main surface; adsorption means that adsorbs the adsorbed body from the second main surface side of the adsorbed body; and a plurality of pressing members provided on the adsorption means for pressing the adsorbed body from the second main surface side of the adsorbed body, wherein the plurality of pressing members are each positioned at a position corresponding to at least two of a plurality of corners of the second main surface of the adsorbed body.

2. An adsorption device comprising: a support unit that supports a peripheral portion of an adsorbed body having a first main surface and a second main surface opposite the first main surface; adsorption means that adsorbs the adsorbed body from the second main surface side of the adsorbed body; and a pressing member that is provided on the adsorption means and presses the adsorbed body from the second main surface side of the adsorbed body before the adsorption means adsorbs the adsorbed body, wherein a support region that is an area on the first main surface where the support unit supports the adsorbed body and a pressing region that is an area on the second main surface where the pressing member presses the adsorbed body do not overlap when viewed from a direction perpendicular to the first main surface or the second main surface, and the pressing member is positioned at a position corresponding to a corner of the second main surface of the adsorbed body.

3. The suction device according to claim 1 or 2, characterized in that the suction means comprises an adsorbed object pressing mechanism having a drive source that generates rotation for moving the pressing member in a vertical direction, a transmission mechanism that transmits the rotation, a conversion unit that converts the rotation transmitted by the transmission mechanism into translational movement, and the pressing member, and the pressing member moves in the vertical direction based on the translational movement converted by the conversion unit.

4. The suction device described in claim 3, characterized in that the driving source generates a rotation in a first direction for moving the pressing member vertically downward, and the pressing member moves vertically downward based on the rotation in the first direction transmitted by the transmission mechanism, whereby an end of the pressing member protrudes from an adsorption surface of the adsorption means which adsorbs the second main surface side of the adsorbed object.

5. The suction device described in claim 4, characterized in that the driving source generates a rotation in a second direction for moving the pressing member vertically upward, and the pressing member moves vertically upward based on the rotation in the second direction transmitted by the transmission mechanism, causing an end of the pressing member protruding from the suction surface of the suction means to retract from the suction surface of the suction means.

6. The suction device according to claim 3, further comprising: a detection means provided at an end of the pressing member for detecting contact with the second main surface of the object to be attracted; and a control means for controlling the number of rotations and the direction of rotation of the drive source based on detection information detected by the detection means, wherein the control means controls the amount of vertical movement of the pressing member by controlling the number of rotations, and controls the movement of the pressing member vertically upward or vertically downward by controlling the direction of rotation.

7. An adsorption device as described in claim 1 or 2, further comprising a distance adjustment means for adjusting the distance between the adsorbed object supported by the support unit and the adsorption means by raising the adsorbed object supported by the support unit toward the adsorption means, wherein the pressing member presses the second main surface of the adsorbed object adjusted by the distance adjustment means.

8. The adsorption device according to claim 6, characterized in that the control means moves the pressing member in the vertical direction within a first movement range when the adsorbed object is adsorbed to the adsorption means, and moves the pressing member in the vertical direction within a second movement range wider than the first movement range when the adsorbed object is detached from the adsorption means.

9. The adsorption device according to claim 1 or 2, wherein the pressing members are arranged at positions corresponding to all of the corners of the object to be adsorbed.

10. The adsorption device according to claim 1 or 2, characterized in that the object to be adsorbed is rectangular.

11. The adsorption device described in claim 1, characterized in that a support area, which is an area on the first main surface where the support unit supports the adsorbed object, and a pressing area, which is an area on the second main surface where the pressing member presses the adsorbed object, do not overlap when viewed from a direction perpendicular to the first main surface or the second main surface.

12. The suction device according to claim 1 or 2, characterized in that the suction means has holes formed at positions corresponding to the positions of the pressing members.

13. A film forming apparatus comprising: the adsorption device according to claim 1 or 2; and a film forming means for forming a film on the first main surface of the object adsorbed by the adsorption means.

14. A suction method in a suction device, comprising: a step of a support unit supporting a peripheral portion of a first main surface of an adsorbed body having a first main surface and a second main surface opposite the first main surface; a step of an adsorbing means adsorbing the adsorbed body from the second main surface side of the adsorbed body; and a step of a plurality of pressing members being provided on the suction means and pressing the adsorbed body from the second main surface side of the adsorbed body, wherein the plurality of pressing members are respectively arranged at positions corresponding to at least two corners of a plurality of corners of the second main surface of the adsorbed body.

15. A suction method in a suction device, comprising: a step of a support unit supporting a peripheral portion of a first main surface of an adsorbed body having a first main surface and a second main surface opposite the first main surface; a step of an adsorption means adsorbing the adsorbed body from the second main surface side of the adsorbed body; a pressing member is provided on the suction means and presses the adsorbed body from the second main surface side of the adsorbed body before the suction means adsorbs the adsorbed body; wherein a support region, which is a region on the first main surface where the support unit supports the adsorbed body, and a pressing region, which is a region on the second main surface where the pressing member presses the adsorbed body, do not overlap when viewed from a direction perpendicular to the first main surface or the second main surface, and the pressing member is positioned at a position corresponding to a corner of the second main surface of the adsorbed body.

16. A film forming method comprising: a step of carrying out the adsorption method according to claim 14 or 15; and a step of forming a film on the first main surface of the object adsorbed by the adsorption means.

17. A method for manufacturing an electronic device, comprising the steps of: forming an electronic device by using the film forming method according to claim 16;

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