Electronic component and method for producing electronic component

Abstract

An electronic component (10) comprises an element body (20) and a glass film (51) that covers an outer surface (21) of the element body (20). The outer surface (21) of the element body (20) has a recess section (24) that is depressed with respect to the surroundings thereof. The material of the glass film (51) contains an organic silane compound. The glass film (51) also has a plurality of voids (53) therein. In a cross-sectional view at a cross section orthogonal to the outer surface (21) of the element body (20), the ratio of the total area of the plurality of voids (53) to the cross-sectional area of the glass film (51) is 0.3-30% at a section of the glass film (51) that covers the recess section (24).

Description

Electronic component and method for manufacturing electronic component

[0001] The present disclosure relates to electronic components and methods for manufacturing electronic components.

[0002] The electronic component disclosed in Patent Document 1 includes an element body and a glass film. The glass film covers the outer surface of the element body. The glass film is formed by spraying a glass slurry onto the element body housed in a rotating barrel. The glass film has a thickness of 5 to 30 μm.

[0003] Patent No. 4868019

[0004] In electronic components such as those disclosed in Patent Document 1, the outer surface of the element body may have a recess, which is a portion recessed relative to the surrounding area. In electronic components such as those disclosed in Patent Document 1, a glass film fills the recess. Therefore, the thickness of the glass film is greater in the portion covering the recess than in other portions. When the glass film has a thick portion, stress is likely to occur in the thick portion due to temperature changes, and cracks and the like are likely to occur in the portion of the glass film covering the recess.

[0005] In order to solve the above-mentioned problems, the present disclosure provides an electronic component comprising an element body and a glass film covering an outer surface of the element body, wherein the outer surface of the element body has a recess that is recessed relative to its surroundings, the material of the glass film contains an organosilane compound, and the glass film has a plurality of voids therein, and when viewed in cross section perpendicular to the outer surface of the element body, at a portion of the glass film covering the recess, the ratio of the total area of ​​the plurality of voids to the cross-sectional area of ​​the glass film is 0.3% or more and 30% or less.

[0006] The present disclosure also provides a method for manufacturing an electronic component, comprising: an element preparation step of preparing an element; an element introduction step of introducing the element into a reaction vessel; a solution introduction step of introducing one or more selected from a metal alkoxide and a metal alkoxide precursor and an organosilane compound into the reaction vessel; a film formation step of forming a glass film on the outer surface of the element by stirring the reaction vessel and hydrolyzing and condensation polymerizing the metal alkoxide; and a media introduction step of introducing into the reaction vessel powder media that is harder than the element and has a particle size larger than the maximum dimension of a line segment connecting two points on the edge of an opening of a recess in the outer surface of the element, wherein the media introduction step is performed before or during the film formation step.

[0007] This can prevent cracks from occurring in the portion of the glass film that covers the recess.

[0008] FIG. 1 is a perspective view of an electronic component. FIG. 2 is a side view of the electronic component. FIG. 3 is a cross-sectional view taken along line 3-3 in FIG. 2. FIG. 4 is an enlarged cross-sectional view of a recess. FIG. 5 is an enlarged cross-sectional view of a recess. FIG. 6 is a flowchart illustrating a manufacturing process for an electronic component. FIG. 7 is an explanatory diagram illustrating a manufacturing method for an electronic component. FIG. 8 is an explanatory diagram illustrating a manufacturing method for an electronic component. FIG. 9 is an explanatory diagram illustrating a manufacturing method for an electronic component. FIG. 10 is an explanatory diagram illustrating a manufacturing method for an electronic component. FIG. 11 is an explanatory diagram illustrating a manufacturing method for an electronic component.

[0009] An embodiment of an electronic component will now be described with reference to the drawings. The drawings may show components enlarged for ease of understanding. The dimensional proportions of the components may differ from those in the actual components or from those in other drawings.

[0010] 1, the electronic component 10 is, for example, a surface-mount type negative temperature coefficient thermistor component mounted on a circuit board, etc. Note that a negative temperature coefficient thermistor component has the characteristic that its resistance value decreases as the temperature increases.

[0011] The electronic component 10 includes an element body 20. The element body 20 is generally rectangular prism-shaped and has a central axis CA. In the following description, an axis extending along the central axis CA is referred to as a first axis X. One of the axes perpendicular to the first axis X is referred to as a second axis Y. An axis perpendicular to the first axis X and the second axis Y is referred to as a third axis Z. One of the directions along the first axis X is referred to as a first positive direction X1, and the direction along the first axis X that is opposite to the first positive direction X1 is referred to as a first negative direction X2. One of the directions along the second axis Y is referred to as a second positive direction Y1, and the direction along the second axis Y that is opposite to the second positive direction Y1 is referred to as a second negative direction Y2. One of the directions along the third axis Z is referred to as a third positive direction Z1, and the direction along the third axis Z that is opposite to the third positive direction Z1 is referred to as a third negative direction Z2.

[0012] The outer surface 21 of the element body 20 has six flat surfaces. The term "surface" of the element body 20 used here refers to a surface that can be observed when the entire element body 20 is observed. In other words, even if there are minute irregularities or steps that are not visible unless a portion of the element body 20 is magnified and observed using a microscope, the surface is still referred to as a flat or curved surface. The six flat surfaces face in different directions. The six flat surfaces are broadly divided into a first end surface 22A facing the first positive direction X1, a second end surface 22B facing the first negative direction X2, and four side surfaces 22C. The four side surfaces 22C are, respectively, a surface facing the third positive direction Z1, a surface facing the third negative direction Z2, a surface facing the second positive direction Y1, and a surface facing the second negative direction Y2.

[0013] In the outer surface 21 of the element body 20, the boundary portions between two adjacent flat surfaces and the boundary portions between three adjacent surfaces are curved. That is, the corners of the element body 20 are rounded and chamfered. In Figures 1 and 2, the outer surface 52 of a glass film 51 (described later) is identified with the outer surface 21 of the element body 20 and is given a reference number.

[0014] As shown in Fig. 2, the element body 20 has a larger dimension along the first axis X than along the third axis Z. Also, as shown in Fig. 1, the element body 20 has a larger dimension along the first axis X than along the second axis Y. The material of the element body 20 is a ceramic obtained by firing a metal oxide containing one or more elements selected from Mn, Fe, Ni, Co, Ti, Ba, Al, and Zn.

[0015] 3 , the electronic component 10 includes two first internal electrodes 41 and two second internal electrodes 42. The first internal electrodes 41 and the second internal electrodes 42 are both embedded inside the element body 20.

[0016] The first internal electrode 41 is made of a conductive material. For example, the first internal electrode 41 is made of palladium. The second internal electrode 42 is made of the same material as the first internal electrode 41.

[0017] The first internal electrode 41 has a rectangular plate shape. The main surface of the first internal electrode 41 is perpendicular to the second axis Y. The second internal electrode 42 has the same rectangular plate shape as the first internal electrode 41. The main surface of the second internal electrode 42 is perpendicular to the second axis Y, similar to the first internal electrode 41.

[0018] The dimension of the first internal electrode 41 in the direction along the first axis X is smaller than the dimension of the element body 20 in the direction along the first axis X. Also, as shown in Fig. 1 , the dimension of the first internal electrode 41 in the direction along the third axis Z is approximately two-thirds of the dimension of the element body 20 in the direction along the third axis Z. The dimensions of the second internal electrode 42 in each direction are the same as those of the first internal electrode 41.

[0019] 3, the first internal electrodes 41 and the second internal electrodes 42 are positioned alternately in the direction along the second axis Y. That is, the first internal electrode 41, the second internal electrode 42, the first internal electrode 41, and the second internal electrode 42 are arranged in this order from the side surface 22C facing the second positive direction Y1 to the second negative direction Y2. In this embodiment, the distances between the internal electrodes in the direction along the second axis Y are equal.

[0020] 1, the two first internal electrodes 41 and the two second internal electrodes 42 are both located at the center of the element body 20 in the direction along the third axis Z. On the other hand, as shown in Fig. 3, the first internal electrodes 41 are located closer to the first positive direction X1, and the second internal electrodes 42 are located closer to the first negative direction X2.

[0021] Specifically, the end of the first internal electrode 41 on the first positive direction X1 side coincides with the end of the element body 20 on the first positive direction X1 side. That is, the end of the first internal electrode 41 on the first positive direction X1 side is exposed at the first end surface 22A of the element body 20. The end of the first internal electrode 41 on the first negative direction X2 side is located inside the element body 20 and does not reach the end of the element body 20 on the first negative direction X2 side. On the other hand, the end of the second internal electrode 42 on the first negative direction X2 side coincides with the end of the element body 20 on the first negative direction X2 side. That is, the end of the first internal electrode 41 on the first negative direction X2 side is exposed at the second end surface 22B of the element body 20. The end of the second internal electrode 42 on the first positive direction X1 side is located inside the element body 20 and does not reach the end of the element body 20 on the first positive direction X1 side.

[0022] As shown in FIG. 3 , the electronic component 10 includes a glass film 51. The glass film 51 covers the outer surface 21 of the element body 20. In this embodiment, the glass film 51 covers all four side surfaces 22C of the outer surface 21 of the element body 20. The main material of the glass film 51 is insulating glass. Therefore, the glass film 51 contains silicon dioxide. The glass film 51 also contains an organosilane compound having a carbon chain with three or more carbon atoms. The organosilane compound has one or more functional groups selected from, for example, an epoxy group, a mercapto group, an amino group, a vinyl group, and a methacryl group. Specifically, the organosilane compound is 3-glycidoxypropyltrimethoxysilane (hereinafter referred to as "GPTMS"). Note that GPTMS has an epoxy group as a functional group.

[0023] 3, the electronic component 10 includes a first external electrode 61 and a second external electrode 62. In FIGS. 1 to 3, the first external electrode 61 and the second external electrode 62 are shown by two-dot chain lines.

[0024] The first external electrode 61 has a first base electrode 61A and a first metal layer 61B. The first base electrode 61A is laminated on a portion of the outer surface 21 of the element body 20, including the first end face 22A. Specifically, the first base electrode 61A covers the first end face 22A of the element body 20, and also covers portions of the four side faces 22C facing the first positive direction X1 from above the glass film 51. In other words, the first base electrode 61A is a five-sided electrode. In this embodiment, the material of the first base electrode 61A is a mixture of organic resin and silver particles.

[0025] The first metal layer 61B externally covers the first base electrode 61A. Therefore, the first metal layer 61B is laminated on the first base electrode 61A. Although not shown, the first metal layer 61B has a two-layer structure consisting of a nickel layer and a tin layer in this order from the first base electrode 61A side. The first external electrode 61 is connected to the end of the first internal electrode 41 on the first positive direction X1 side.

[0026] The second external electrode 62 has a second base electrode 62A and a second metal layer 62B. The second base electrode 62A is laminated on a portion of the outer surface 21 of the element body 20, including the second end face 22B. Specifically, the second base electrode 62A covers the second end face 22B of the element body 20, and also covers portions of the four side faces 22C facing the first negative direction X2 from above the glass film 51. In other words, the second base electrode 62A is a five-sided electrode. In this embodiment, the material of the second base electrode 62A is a mixture of organic resin and silver particles.

[0027] The second metal layer 62B externally covers the second base electrode 62A. Therefore, the second metal layer 62B is laminated on the second base electrode 62A. Specifically, the second metal layer 62B has a two-layer structure of nickel plating and tin plating, similar to the first metal layer 61B. The second external electrode 62 is connected to the end of the second internal electrode 42 on the first negative direction X2 side.

[0028] The second external electrode 62 does not reach the first external electrode 61 on the side surface 22C, and is spaced apart from the first external electrode 61 in the direction along the first axis X. In addition, the first external electrode 61 and the second external electrode 62 are not stacked in the central portion of the side surface 22C of the element body 20 in the direction along the first axis X, and the glass film 51 is exposed.

[0029] (Regarding Recesses) As shown in Figure 4, the outer surface 21 of the element body 20 has one or more recesses 24. The recesses 24 are areas that are recessed toward the inside of the element body 20 relative to the surrounding area. The glass film 51 described above also covers the recesses 24 on the outer surface 21 of the element body 20. The glass film 51 generally follows the recessed shape of the recesses 24. In other words, the outer surface 52 of the glass film 51 that covers the recesses 24 is recessed toward the inside of the element body 20 relative to the surrounding area. The recesses 24 are caused by the falling off of ceramic particles, cracks, and chips in the element body 20, etc.

[0030] In this embodiment, the recess 24 is defined as a depression having a maximum depth HD that is 10 times or more the arithmetic mean roughness of the outer surface 21 of the element body 20. The maximum depth HD of the recess 24 is the depth at the deepest point of the recess 24. Specifically, the maximum depth HD of the recess 24 is calculated as follows: First, the element body 20 is ground in a direction perpendicular to the outer surface 21 of the element body 20. The grinding is performed, for example, by focused ion beam processing. Next, an image of the ground cross section of the element body 20 is taken using an electron microscope or the like. The imaging magnification of the electron microscope is, for example, 10,000 times or more and 30,000 times or less. Then, as shown in FIG. 4 , a tangent line CL is drawn on the imaged ground cross section, circumscribing both of the outer surfaces 21 of the element body 20 on both sides of the recess 24. Note that a portion of the tangent line CL may coincide with the outer surface 21 of the element body 20. At this time, the length from the tangent line CL to the inner surface of the recess 24 in a direction perpendicular to the tangent line CL is defined as the depth of the recess 24. Next, the element body 20 is further ground from the above-mentioned ground cross-section by a predetermined imaging pitch, and a new ground cross-section of the element body 20 is imaged. The imaging pitch is, for example, 10 nm. The maximum depth of the same recess 24 on this new ground cross-section is measured. In this manner, the imaging of the ground cross-section of the element body 20 and the measurement of the maximum depth of the recess 24 are repeated. The largest value among the maximum depths of the recess 24 on each ground cross-section obtained in this way is defined as the maximum depth HD of the entire recess 24. The maximum depth HD of the recess 24 calculated by this method is 0.3 μm or more and 10 μm or less.

[0031] Furthermore, of the points of contact between the tangent line CL drawn by the above-described method and the outer surface 21 of the element body 20, the end closest to the center of the recess 24 is defined as the opening edge 25. The maximum dimension L of a line segment LS connecting two points on the opening edge 25 of the recess 24 is 0.5 μm or more and 20 μm or less. In other words, when multiple line segments LS connecting two points on the opening edge 25 of the recess 24 are drawn, the dimension L of the longest line segment LS among the multiple line segments LS is 0.5 μm or more and 20 μm or less. In FIG. 4, the line segment LS is indicated by a dashed line. The line segment LS also overlaps with a portion of the above-described tangent line CL.

[0032] The arithmetic mean roughness of the recesses 24 in the outer surface 21 of the element body 20 is 6 nm or more and 500 nm or less. A preferred range for the arithmetic mean roughness of the recesses 24 is 6 nm or more and 250 nm, and a more preferred range is 6 nm or more and 100 nm or less. The measurement range for the arithmetic mean roughness of the portions covering the recesses 24 is the range between the opening edges 25 of one recess 24 identified by the above-mentioned method and a range of 500 nm in the direction along the tangent line CL. Then, the arithmetic mean roughness of the glass film 51 in the portions covering the recesses 24 in the measurement range is calculated by image analysis. In addition to the above-mentioned method, a laser microscope, a white light interferometer, etc. may also be used to calculate the arithmetic mean roughness.

[0033] (Regarding the Glass Film Covering the Recesses) The portion of the outer surface 21 of the element body 20 excluding the recesses 24 is defined as the flat portion 26. The average thickness T1 of the glass film 51 covering the recesses 24 is greater than the average thickness T2 of the glass film 51 covering the flat portion 26. The average thickness of the entire glass film 51 is 15 nm or more and 10 μm or less. The average thickness of the entire glass film 51 is preferably 15 nm or more and 5 μm or less, and more preferably 15 nm or more and 1 μm or less. The average thickness of the glass film 51 is calculated as follows: First, an electron microscope is used to capture an image of the cross section of the element body 20. A measurement range of at least 10 μm in the direction along the outer surface 52 of the glass film 51 is determined for the captured image. The cross-sectional area of ​​the glass film 51 in the measurement range is then calculated by image processing. The cross-sectional area of ​​the glass film 51 also includes the area of ​​voids 53, which will be described later. Next, the cross-sectional area is divided by the length of the measurement range in the direction along the outer surface 52 of the glass film 51. This calculates the average thickness of the glass film 51 in the measurement range. In other words, the average thickness of the glass film 51 is the average thickness in the measurement range. When using the above method to determine the thickness T1 of the glass film 51 at the location covering the recess 24, it is sufficient to specify measurement ranges for multiple recesses 24 so that the total measurement range is 10 μm or more.

[0034] 4, the glass film 51 has a plurality of voids 53 therein. The voids 53 are cavities formed inside the glass film 51 in a film-forming step S18 of the manufacturing method, which will be described later. Therefore, the voids 53 do not include voids that are open on the outer surface 52 side of the glass film 51, but are cavities that are sealed inside the glass film 51. When viewed in cross section at a cut cross section perpendicular to the outer surface 21 of the element body 20 by the above-mentioned method, the area of ​​each void 53 is 1 nm ２ or more and 10,000 nm ２ The preferred range of the area per void 53 is 1 nm or less. ２ or more and 5000 nm ２ A more preferable range is 1 nm. ２ or more and 2500 nm ２ The area per void 53 is the average value of the voids 53 observable in the cross-sectional view. In other words, the area per void 53 is a numerical value obtained by dividing the total area of ​​the voids 53 in the cross-sectional view by the number of the voids 53.

[0035] When viewed in a cross section perpendicular to the outer surface 21 of the element body 20, the ratio of the total area of ​​the plurality of voids 53 to the cross-sectional area of ​​the glass film 51 at the portion covering the recess 24 is 0.3% or more and 30% or less. A preferred range for this ratio is 0.5% or more and 20% or less, and a more preferred range is 1% or more and 10% or less. Hereinafter, the ratio of the total area of ​​the plurality of voids 53 to the cross-sectional area of ​​the glass film 51 when viewed in a cross section perpendicular to the outer surface 21 of the element body 20 is referred to as the porosity. In this case, the cross section perpendicular to the outer surface 21 of the element body 20 is, for example, a ground cross section that can be observed with a scanning transmission electron microscope (STEM) using energy dispersive X-ray spectroscopy (EDX) when the element body 20 is ground using the above-mentioned method. In other words, the ground cross section is an EDX image showing EDX mapping data of the main components of the glass. In this cross section, the porosity is calculated by dividing the total area of ​​the plurality of voids 53 by the cross-sectional area of ​​the glass film 51 and converting the result into a percentage. The "cross-sectional area of ​​the glass film 51" also includes the area of ​​the voids 53 in the cross section.

[0036] The porosity of the glass film 51 at the portion covering the recessed portion 24 is higher than the porosity of the glass film 51 at the portion covering the flat portion 26. Specifically, the porosity of the glass film 51 at the portion covering the recessed portion 24 is 0.3% or more and 30% or less, whereas the porosity of the glass film 51 at the portion covering the flat portion 26 is less than 0.3%. In this embodiment, no voids 53 are observed in the flat portion 26, and therefore the porosity of the portion covering the flat portion 26 is 0%. This is presumably due to the fact that the voids 53 at the portion of the glass film 51 covering the flat portion 26 are crushed in the film-forming step S18 of the manufacturing method described below.

[0037] As shown in FIG. 5 , when viewed in cross section at a cut cross section perpendicular to the outer surface 21 of the element body 20 using the method described above, the shortest distance SD between the void 53 and the outer surface 21 of the element body 20 is 15 nm or more. Furthermore, one void 53 is selected from the plurality of voids 53, and multiple line segments connecting two points on the outer edge of the void 53 are imagined. Of these multiple line segments, the line segment with the longest distance between the two points is designated as the first line segment W. Of the multiple line segments, the line segment that passes through the midpoint of the first line segment W and is perpendicular to the first line segment W is designated as the second line segment H. The dimension of the first line segment W is 1.01 to 10 times the dimension of the second line segment H. The lower limit of the dimension of the first line segment W relative to the dimension of the second line segment H is preferably 1.5 times or more, more preferably 3 times or more. The upper limit of the dimension of the first line segment W relative to the dimension of the second line segment H is preferably 5 times or less. In other words, the shape of the gap 53 may be substantially rectangular or substantially elliptical.

[0038] (Method for Manufacturing Electronic Component) Next, a method for manufacturing electronic component 10 will be described. As shown in Figure 6, the method for manufacturing electronic component 10 includes an element body preparation step S11, an R-chamfering step S12, a solvent introduction step S13, and a catalyst introduction step S14. The method for manufacturing electronic component 10 also includes an element body introduction step S15, a solution introduction step S16, a media introduction step S17, a film formation step S18, and a drying step S19. Furthermore, the method for manufacturing electronic component 10 also includes a first curing step S20, an internal electrode exposure step S21, a conductor application step S22, a second curing step S23, and a plating step S24.

[0039] First, an element body preparation step S11 is performed. In the element body preparation step S11, a rectangular parallelepiped element body 20 having six flat surfaces is prepared. That is, the element body 20 at this stage is the element body 20 in a state before R-chamfering. For example, first, a plurality of ceramic sheets that will become the element body 20 are prepared. The sheets are thin plates. A conductive paste that will become the first internal electrode 41 is laminated on the sheets. A ceramic sheet that will become the element body 20 is laminated on the conductive paste. A conductive paste that will become the second internal electrode 42 is laminated on the sheets. In this manner, the ceramic sheets and the conductive paste are laminated. The element body 20 is then cut to a predetermined size to form the element body 20 as an unfired laminate. The unfired element body 20 is then fired at a high temperature to prepare the element body 20.

[0040] Next, as shown in Fig. 6, an R-chamfering process S12 is performed. In the R-chamfering process S12, curved surfaces are formed at the boundary portions between two adjacent flat surfaces and at the boundary portions between three adjacent flat surfaces of the laminate prepared in the element preparation process S11. For example, the corners of the laminate are R-chamfered by barrel polishing, thereby forming curved surfaces at the boundary portions.

[0041] Next, as shown in Fig. 6, a solvent introduction step S13 is performed. As shown in Fig. 7, in the solvent introduction step S13, 2-propanol is introduced into a reaction vessel 81 as a solvent 82. Next, as shown in Fig. 6, a catalyst introduction step S14 is performed. As shown in Fig. 8, in the catalyst introduction step S14, first, stirring of the solvent 82 in the reaction vessel 81 is started. Then, ammonia water is introduced into the reaction vessel 81 as an aqueous solution 83 containing a catalyst. The catalyst in this embodiment is hydroxide ions, which function as a catalyst for promoting the hydrolysis of a metal alkoxide, which will be described later.

[0042] Next, an element body introduction step S15 is performed as shown in Fig. 6. In the element body introduction step S15, the plurality of element bodies 20 formed in the R-chamfering step S12 are introduced into a reaction vessel 81 as shown in Fig. 9.

[0043] Next, as shown in FIG. 6 , a solution introduction step S16 is performed. As shown in FIG. 10 , in the solution introduction step S16, a mixed solution 84, which is a solution in which a metal alkoxide and an organosilane compound are mixed, is introduced into a reaction vessel 81. The metal alkoxide is liquid tetraethyl orthosilicate (hereinafter referred to as "TEOS"). TEOS is also called tetraethoxysilane. The organosilane compound is liquid GPTMS. The GPTMS is introduced at a weight ratio of 0.12 or more to 1 but less than 1 relative to the TEOS. Specifically, the GPTMS is introduced at a weight ratio of approximately 0.43 relative to the TEOS.

[0044] The amount of mixed liquid 84 to be added in solution adding step S16 is calculated based on the area of ​​the outer surface 21 of the element 20 added in element adding step S15. Specifically, first, the amount of mixed liquid 84 required to form a glass film 51 covering the outer surface 21 of each element 20 is calculated for each element 20. This amount is multiplied by the number of element 20 added in element adding step S15 to calculate the total amount of mixed liquid 84 required.

[0045] Next, as shown in FIG. 6 , a media introduction step S17 is performed. As shown in FIG. 11 , in the media introduction step S17, media 85 are introduced into the reaction vessel 81. The media 85 is sometimes called a spherical stone. The media 85 is in a powder form and is harder than the element body 20. The particle size of the media 85 is larger than the maximum dimension L of a line segment connecting two points on the opening edge 25 of the recess 24 in the outer surface 21 of the element body 20. Specifically, the particle size of the media 85 is 0.05 mm or more and 5.0 mm or less. The hardness is what is known as indentation hardness, and is expressed, for example, as Vickers hardness. The Vickers hardness is calculated from the area of ​​the indentation made on a sample when a diamond indenter is pressed into the sample.

[0046] In this embodiment, the material of the media 85 is zirconia. That is, the material of the media 85 is zirconium oxide (ZrO ２ ) The zirconia media 85 are sometimes called zirconia balls. In the media introduction step S17 of this embodiment, the particle size of the media 85 introduced into the reaction vessel 81 is equal to or larger than the dimension of a specific side of the element body 20. Specifically, the dimension of one side of the first end face 22A and the second end face 22B of the element body 20 is approximately 0.3 mm, and the particle size of the media 85 is equal to or larger than approximately 0.3 mm.

[0047] The total amount of media 85 introduced in the media introduction step S17 is at least 0.1 times the volume of the element 20 introduced in the element introduction step S15. The total amount of media 85 is determined so that the bath load of the element 20 and media 85 is a predetermined value. That is, first, the sum of the total area of ​​the outer surface 21 of the element 20 introduced in the element introduction step S15 and the surface area of ​​the entire media 85 is calculated. The bath load is the value obtained by dividing this total value by the total amount of the mixed solution 84 introduced in the solution introduction step S16. The unit of the bath load is, for example, "cm ２ / L". The amount of media 85 to be input is determined so that the bath load value becomes a predetermined value.

[0048] Next, as shown in Fig. 6, a film-forming step S18 is performed. In the film-forming step S18, a sol-like glass film 51 is formed on the outer surface 21 of the element body 20 by using a liquid-phase method. Specifically, first, the stirring of the solvent 82, which was started in the solvent-adding step S13, is continued for a predetermined time. As a result, the metal alkoxide is hydrolyzed by the hydroxide ions serving as a catalyst, and undergoes condensation polymerization.

[0049] Furthermore, when the metal alkoxide is hydrolyzed and undergoes condensation polymerization, the metal alkoxide and the organosilane compound adhere to the outer surface 21 of the element body 20. The condensation polymerization of these metal alkoxides forms a sol-like glass film 51 on the outer surface 21 of the element body 20. At this time, each particle of the metal alkoxide undergoing condensation polymerization on the outer surface 21 of the element body 20 grows into a particle with a relatively large volume. The grown metal alkoxide particles are then bonded together with gaps of several nanometers or more between them. Therefore, voids 53 resulting from these gaps are generated inside the sol-like glass film 51 that has just been formed on the outer surface 21 of the element body 20.

[0050] In the film-forming step S18, the solvent 82 continues to be stirred as described above. Therefore, the media 85 introduced in the media introduction step S17 collide with the glass film 51 formed by condensation polymerization on the outer surface 21 of the element body 20. At the time of this film-forming step S18, the glass film 51 is in a sol state. Therefore, when the media 85 collides with the glass film 51, the glass film 51 is crushed and deformed. As a result, the voids 53 generated within the glass film 51 are crushed and filled. However, as described above, the particle size of the media 85 is larger than the opening of the recess 24. Therefore, the voids 53 generated in the portion of the glass film 51 covering the flat portion 26 are crushed and filled over time, while the voids 53 generated in the portion of the glass film 51 covering the recess 24 remain uncrushed even after the film-forming step S18. Therefore, as described above, the porosity of the portion of the glass film 51 covering the recess 24 is higher than the porosity of the portion of the glass film 51 covering the flat portion 26.

[0051] In the film-forming step S18, the sol-like glass film 51 is formed on the outer surface 21 of the element body 20 by a so-called barrel method. That is, since the reaction vessel 81 containing the plurality of element bodies 20 is continuously stirred, the element bodies 20 also collide with each other. Therefore, the voids 53 generated inside the sol-like glass film 51 covering the flat portion 26 are also crushed by the collisions between the element bodies 20.

[0052] Next, a drying step S19 is performed. In the drying step S19, first, after the film-forming step S18, the element body 20 is removed from the reaction vessel 81. Next, the glass film 51 on the sol is dried. As a result, a gel-like glass film 51 is formed.

[0053] Next, a first hardening step S20 is performed. In the first hardening step S20, the element body 20 that has been through the drying step S19 is baked at a temperature of 140°C or higher and 160°C or lower. Specifically, it is baked at a temperature of 150°C. This hardens the gel-like glass film 51. In other words, the entire glass film 51 hardens. At this stage, the glass film 51 covers the entire outer surface 21 of the element body 20.

[0054] Next, an internal electrode exposing step S21 is performed. In the internal electrode exposing step S21, the glass film 51 covering the first end face 22A and the second end face 22B of the element body 20 is removed to expose the first internal electrode 41 and the second internal electrode 42. In this embodiment, the glass film 51 is removed by cutting with a laser over the entire first end face 22A and the entire second end face 22B of the element body 20.

[0055] Next, a conductor application step S22 is performed. In the conductor application step S22, a conductor paste is applied to a portion of the outer surface 21 of the element body 20 and a portion of the outer surface 52 of the glass film 51. Specifically, the conductor paste is applied to two locations: the glass film 51 covering the first end face 22A of the element body 20 and portions of the four side faces 22C of the element body 20 on the first positive direction X1 side; and the glass film 51 covering the second end face 22B of the element body 20 and portions of the four side faces 22C of the element body 20 on the first negative direction X2 side.

[0056] Next, a second curing step S23 is performed. Specifically, in the second curing step S23, the element body 20 to which the conductive paste has been applied is heated to harden the conductive paste. In this embodiment, the element body 20 is heated to approximately 200°C. The conductive paste applied in the conductor applying step S22 is then fired to form the first base electrode 61A and the second base electrode 62A.

[0057] Next, a plating step S24 is performed. In the plating step S24, a first metal layer 61B is formed on the surface of the first base electrode 61A by electroplating. A second metal layer 62B is formed on the surface of the second base electrode 62A. Although not shown, the first metal layer 61B and the second metal layer 62B are electroplated with two types of metal, nickel and tin, to form a two-layer structure. In this manner, the electronic component 10 is formed.

[0058] (Effects of the Present Embodiment) (1) In the above embodiment, the glass film 51 has a plurality of voids 53. When viewed in a cross section perpendicular to the outer surface 21 of the element body 20, the porosity of the portions of the glass film 51 covering the recesses 24 is 0.3% or more and 30% or less. Because the glass film 51 has a plurality of voids 53, even if stress occurs in the above-mentioned portions of the glass film 51, each void 53 buffers the stress. That is, the stress generated in the glass film 51 is dispersed by each void 53 and is less likely to concentrate in a specific location. Therefore, cracks are less likely to occur in the portions of the glass film 51 covering the recesses 24. Furthermore, a void ratio of 0.3% or more significantly reduces the effect of making the glass film 51 less susceptible to cracks. On the other hand, because the void ratio is 30% or less, the presence of the voids 53 does not excessively impair the barrier properties of the glass film 51.

[0059] (2) In the above embodiment, the average thickness of the entire glass film 51 is 15 nm or more and 10 μm or less. If the thickness of the glass film 51 is 15 nm or more, even if the glass film 51 has voids 53, moisture and the like can be prevented from penetrating the voids 53 and reaching the element body 20. In other words, the barrier properties and the like required for the glass film 51 can be ensured. Furthermore, if the thickness of the glass film 51 is 10 μm or less, the presence of voids 53 in the glass film 51 can significantly suppress the occurrence of cracks. Therefore, it is preferable that the average thickness of the entire glass film 51 be within the above range.

[0060] Furthermore, when the thickness of glass film 51 is within the above range, it is unlikely to interfere with other members of electronic component 10 other than glass film 51. For example, when forming external electrodes on outer surface 21 of element body 20, the presence of glass film 51 is unlikely to be an obstacle.

[0061] (3) In the above embodiment, thickness T1 of the glass film 51 at the portion covering the recess 24 is greater than thickness T2 of the portion covering the flat portion 26. Because the glass film 51 is thick at the portion covering the recess 24, it is easy to prevent the intrusion of moisture and the like. Furthermore, even if the glass film 51 is thick, stress is less likely to concentrate at a specific location because the glass film 51 has voids 53. It is particularly suitable to adopt the configuration related to voids 53 in the above embodiment for the glass film 51 having a large thickness T1 at the portion covering the recess 24.

[0062] (4) In the above embodiment, the porosity of the portion of glass film 51 covering recess 24 is higher than the porosity of the portion of glass film 51 covering flat portion 26. The portion of glass film 51 covering recess 24 is more susceptible to cracking than the portion covering flat portion 26. Since voids 53 are concentrated in the portion of glass film 51 covering recess 24, the occurrence of cracks in that portion can be significantly suppressed.

[0063] (5) In the above embodiment, the shortest distance SD between the void 53 and the outer surface 21 of the element body 20 is 15 nm or more. If the distance between the void 53 and the outer surface 21 of the element body 20 is short, there is a risk that the void 53 or a microcrack originating from the void 53 will reach the outer surface 21 of the element body 20. As described above, by setting the distance between the void 53 and the outer surface 21 of the element body 20 to 15 nm or more, it is possible to prevent the void 53 from reaching the element body 20 through a crack. Furthermore, because cracks are less likely to reach the element body 20, the adhesion of the glass film 51 to the element body 20 is less likely to decrease.

[0064] (6) In the above embodiment, when viewed in a cross section perpendicular to the outer surface 21 of the element body 20, the area of ​​the voids 53 is 1 nm ２ or more and 10,000 nm ２ The area of ​​the void 53 is 1 nm or less. ２ On the other hand, if the area of ​​the void 53 is smaller than 10000 nm , it is difficult to relieve the stress generated in the glass film 51. ２ If the area is larger than this, there is a risk of the barrier properties of the glass film 51 decreasing. Therefore, the area of ​​the voids 53 is preferably within the above range.

[0065] (7) In the above embodiment, the dimension of first line segment W is 1.01 to 10 times the dimension of second line segment H. To relieve stress generated in glass film 51, it is preferable that voids 53 be uniformly distributed throughout glass film 51. On the other hand, the greater the porosity, the more likely it is that the barrier properties of glass film 51 will be reduced. Therefore, by providing voids 53 with the above-described elongated shape, the distribution of voids 53 within glass film 51 can be made more uniform without significantly increasing the volume of voids 53 within glass film 51.

[0066] (8) In the above embodiment, the maximum dimension L of the line segment LS connecting two points on the opening edge 25 of the recess 24 is 0.5 μm or more and 20 μm or less. When the maximum dimension L of the line segment LS is 0.5 μm or more, metal alkoxide particles are likely to adhere to the outer surface 21 of the element body 20, and therefore the glass film 51 is likely to be formed also in the recess 24. Furthermore, if the recess 24 is large, when the surface of the glass film 51 rubs against an external object, the object may get caught on the recess 24, causing scratches or the like on the element body 20. Therefore, when the maximum dimension L of the line segment LS is 20 μm or less, the strength of the glass film 51 as a whole is unlikely to decrease.

[0067] (9) In the above embodiment, the maximum depth HD of the recess 24 is 0.3 μm or more and 10 μm or less. If the maximum depth HD of the recess 24 is less than 0.3 μm, there is a risk that external objects may come into contact with the portion of the glass film 51 covering the recess 24. As described above, because the recess 24 is caused by cracks and chips in the element body 20, the arithmetic mean roughness of the recess 24 is likely to be larger than that of the flat portion 26. If the arithmetic mean roughness is large, the frictional force applied to the outer surface 52 of the glass film 51 is likely to be large, which may result in cracks or the like occurring in the portion of the glass film 51 covering the recess 24. Therefore, it is preferable that the maximum depth HD of the recess 24 be 0.3 μm or more. Furthermore, if the maximum depth HD of the recess 24 is greater than 10 μm, there is a risk that the thickness T2 of the glass film 51 near the opening edge 25 of the recess 24 may be excessively small. In this case, cracks are likely to occur in the glass film 51 near the opening edge 25 of the recess 24. Therefore, it is preferable that the maximum depth HD of the recess 24 is 10 μm or less.

[0068] (10) In the above embodiment, the arithmetic mean roughness of the recesses 24 is 6 nm or more and 500 nm or less. Because the shape of the outer surface 52 of the glass film 51 follows the shape of the outer surface 21 of the element body 20 to some extent, the arithmetic mean roughness of the outer surface 52 of the glass film 51 is also 500 nm or less. If the arithmetic mean roughness of the recesses 24 is within the above numerical range, even if stress is generated in the glass film 51 due to rubbing between an external object and the recesses 24, the presence of voids 53 in the glass film 51 significantly suppresses the occurrence of cracks.

[0069] (11) In the above embodiment, the manufacturing method of electronic component 10 includes media loading step S17. The particle size of media 85 is larger than the maximum dimension L of line segment LS connecting two points on opening edge 25 of recess 24. Therefore, media 85 is less likely to come into contact with the portion of glass film 51 covering recess 24. Therefore, in film formation step S18, glass film 51 can be formed with a higher porosity in recess 24 than in flat portion 26.

[0070] (12) In the above embodiment, in the media introduction step S17, zirconia balls are introduced into the reaction vessel 81 as the media 85. Zirconia is suitable as the media 85 because it has higher hardness and durability than other ceramics.

[0071] (13) For example, particles that have fallen off from element body 20 tend to remain as foreign matter in recess 24 of element body 20. If foreign matter remains in recess 24, the foreign matter will remain in glass film 51. If the thermal expansion coefficient of glass film 51 differs from the thermal expansion coefficient of the foreign matter, stress is likely to occur in glass film 51 near the interface with the foreign matter due to temperature changes. According to the above embodiment, even if foreign matter remains in glass film 51 covering recess 24, the presence of voids 53 in glass film 51 allows the stress to be alleviated.

[0072] <Modifications> The above embodiment and the following modifications can be implemented in combination with each other within the scope of technical compatibility.

[0073] The electronic component 10 is not limited to a negative temperature coefficient thermistor component. For example, the electronic component 10 may be a thermistor component other than a negative temperature coefficient thermistor component, a multilayer capacitor component, or an inductor component, as long as it has some kind of wiring inside the element body 20.

[0074] The material of the element body 20 is not limited to the example of the above embodiment. For example, the material of the element body 20 may be a composite of resin and metal powder, fiber, thermosetting resin, or other material. The shape of the element body 20 is not limited to the example of the above embodiment. For example, the element body 20 may be a polygonal columnar shape other than a quadrangular columnar shape having a central axis CA. The element body 20 may also be the core of a wire-wound inductor component. For example, the core may have a so-called drum core shape. Specifically, the core may have a columnar winding core portion and flange portions provided at each end of the winding core portion.

[0075] The boundary portion between adjacent flat surfaces on the outer surface 21 of the element body 20 does not have to be chamfered. In this case, there is no curved surface at the boundary portion. The shapes of the first internal electrodes 41 and second internal electrodes 42 are not important as long as they ensure electrical conduction with the corresponding first external electrodes 61 and second external electrodes 62. Furthermore, the number of first internal electrodes 41 and second internal electrodes 42 is not important, and the number of internal electrodes may be one, or three or more.

[0076] The configuration of the first external electrode 61 is not limited to the example of the above embodiment. For example, the first external electrode 61 may be composed of only the first base electrode 61A, or the first metal layer 61B may not have a two-layer structure. Furthermore, the electronic component 10 may not have the first external electrode 61, and the first internal electrode 41 may be exposed at the first end surface 22A. In other words, the end surface of the first internal electrode 41 may function as an external electrode. The same applies to the second external electrode 62.

[0077] The materials of the first internal electrode 41, the second internal electrode 42, the first external electrode 61, and the second external electrode 62 are not limited to those in the above embodiment, as long as electrical conduction between the first internal electrode 41 and the second internal electrode 42 and the corresponding first external electrode 61 and second external electrode 62 is ensured.

[0078] The configuration of the glass film 51 is not limited to the example of the above embodiment. For example, the area covered by the glass film 51 may be changed as appropriate depending on the shape of the element body 20 and the positions of the first external electrode 61 and the second external electrode 62. The glass film 51 needs to cover at least the outer surface 21 including the recesses 24 of the element body 20, and the porosity of the portion of the glass film 51 covering the recesses 24 should be within the above-mentioned range.

[0079] The maximum depth HD of recess 24 may be less than 0.3 μm or greater than 10 μm. Furthermore, the maximum dimension L of line segment LS connecting two points on opening edge 25 of recess 24 may be less than 0.5 μm or greater than 20 μm. Regardless of the size of recess 24, the presence of void 53 in the portion of glass film 51 covering recess 24 can prevent cracks from occurring in that portion.

[0080] The arithmetic mean roughness of the recesses 24 on the outer surface 21 of the element body 20 may be less than 6 nm or greater than 500 nm. Regardless of the arithmetic mean roughness of the recesses 24, the voids 53 can alleviate stress generated in the glass film 51.

[0081] The average value of the thickness T2 of the glass film 51 covering the recessed portion 24 may be equal to or less than the average value of the thickness T1 of the glass film 51 covering the flat portion 26. Regardless of the thickness of the glass film 51, at least the effect described in (1) can be obtained.

[0082] When viewed in cross section along a cut cross section perpendicular to the outer surface 21 of the element body 20, the area of ​​the void 53 is 1 nm ２ It may be less than 10,000 nm ２ The suitable area of ​​void 53 may vary depending on, for example, the dimensions of element body 20 and the average thickness of glass film 51. Even if the area of ​​void 53 is small, as long as the porosity at the portion of glass film 51 covering recess 24 is high within a range of 30% or less, the stress generated in glass film 51 can be alleviated. Furthermore, even if the area of ​​void 53 is large, as long as the porosity is small within a range of 0.3% or more, the barrier properties of glass film 51 will not be excessively reduced.

[0083] The porosity of the portion of the glass film 51 covering the recess 24 may be equal to or less than the porosity of the portion of the glass film 51 covering the flat portion 26. The porosity of the portion of the glass film 51 covering the flat portion 26 may be 0.3% or more. For example, if the media loading step S17 is omitted in the manufacturing method of the electronic component 10, the porosity of the portion of the glass film 51 covering the flat portion 26 may be high. Even in this case, at least the effect described in (1) can be obtained by keeping the porosity of the portion of the glass film 51 covering the recess 24 within the predetermined range.

[0084] The dimension of the first line segment W may be equal to or greater than ten times the dimension of the second line segment H. Regardless of the shape of the gap 53, at least the effect described in (1) can be obtained.

[0085] The solvent 82 introduced in the solvent introduction step S13 is not limited to the example of the above embodiment, and may be any liquid capable of adequately dispersing the metal alkoxide. The solvent introduction step S13 may be performed after the catalyst introduction step S14 or the matrix introduction step S15. The solvent introduction step S13 may be performed prior to at least one of the solution introduction step S16 and the catalyst introduction step S14. The solvent introduction step S13 may also be omitted. In this case, for example, if the amount of water contained in the catalyst-containing aqueous solution 83 is adequately large, the metal alkoxide will react in the liquid phase. The catalyst-containing aqueous solution 83 may also be introduced in a state where it is mixed with an organic solvent as the solvent 82.

[0086] In the above embodiment, the aqueous solution 83 containing the catalyst is ammonia water, and the catalyst is hydroxide ions, but the catalyst is not limited to this. A basic aqueous solution can promote the hydrolysis of metal alkoxide as a catalyst, similar to the ammonia water in the above embodiment. Even an acidic aqueous solution can promote the hydrolysis of metal alkoxide as a catalyst. Furthermore, even a neutral aqueous solution can be used as long as it contains a substance that functions as a catalyst, such as ions that can promote hydrolysis.

[0087] Although the catalyst has been described as being introduced as an aqueous solution 83 containing the catalyst, a solid compound containing the catalyst and water may be introduced separately into the reaction vessel 81. In this case, the catalyst can be considered to have been introduced into the reaction vessel 81 when it is produced in the reaction vessel 81. Also, for example, a solid compound containing the catalyst may be introduced into the reaction vessel 81, or the water required for hydrolysis may be moisture in the air.

[0088] The raw body introduction step S15 may be performed before the catalyst introduction step S14. Furthermore, if the raw body introduction step S15 is performed before the catalyst introduction step S14, the solution introduction step S16 may be performed before the catalyst introduction step S14 or the raw body introduction step S15. It is sufficient that at least the raw body introduction step S15 is performed before either the solution introduction step S16 or the catalyst introduction step S14.

[0089] In the solution introduction step S16, it is not necessary to generate the metal alkoxide outside the reaction vessel 81 in advance, and the metal alkoxide may be generated inside the reaction vessel 81. For example, the metal alkoxide may also be generated by a chemical reaction between a metal salt and an alcohol. Therefore, in the solution introduction step S16, the metal alkoxide precursor, that is, the metal salt and alcohol, may be introduced into the reaction vessel 81. In other words, even if the metal alkoxide is generated inside the reaction vessel 81, the metal alkoxide can be considered to have been introduced into the reaction vessel 81.

[0090] The metal alkoxide is not limited to TEOS. For example, titanium, aluminum, or the like may be used as the metal contained in the metal alkoxide. When the metal contained in the metal alkoxide is silicon, the reaction rate is slower than that of other metals, making it easier to control the reaction rate of the metal alkoxide to a constant value. The alkoxy group of the metal alkoxide may be a methoxy group, a propoxy group, or the like. Furthermore, the coordination number for the metal contained in the metal alkoxide is not limited to 4-coordination, and may be 3-coordination or 2-coordination.

[0091] In the above embodiment, the organosilane compound is not limited to GPTMS. Furthermore, the organosilane compound may not necessarily have any of an epoxy group, a mercapto group, an amino group, a vinyl group, or a methacryl group. For example, the organosilane compound may be 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-(2-aminoethyl)aminopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, (3-glycidoxypropyl)methyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, n-propyltrimethoxysilane, isobutyltrimethoxysilane, n-hexyltrimethoxysilane, or n-decyltrimethoxysilane. The presence of an organosilane compound in the glass film 51 can be identified using methods such as X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, Raman spectroscopy, or energy dispersive X-ray analysis.

[0092] The glass film 50 may contain one or more compounds selected from an organotitanium compound, an organoaluminum compound, and an organozirconium compound instead of or in addition to the organosilane compound. These compounds also function as coupling agents, similar to the organosilane compound, and therefore can function in the same manner as the example of the above embodiment.

[0093] In the solution introduction step S16, the mixed solution 84 of the metal alkoxide and the organosilane compound does not need to be mixed in advance. The metal alkoxide and the organosilane compound may be individually introduced into the reaction vessel 81 in a predetermined ratio. Even in this case, the mixed solution 84 can be considered to have been introduced into the reaction vessel 81.

[0094] In the solution introduction step S16, the weight ratio of the organosilane compound to the metal alkoxide introduced into the reaction vessel 81 is not limited to the example in the above embodiment. As long as the glass film 51 can be formed, the first curing step S20 does not have to be performed after the drying step S19. For example, in the second curing step S23, the glass film 51 may be cured together with the firing of the conductive paste.

[0095] The media introduction step S17 may be performed before or during the film formation step S18. For example, in the element introduction step S15, the element body 20 and the media 85 may be simultaneously introduced into the reaction vessel 81. However, if the media 85 is introduced during the film formation step S18, it is necessary to agitate the liquid in the reaction vessel 81 at least after the media 85 is introduced into the reaction vessel 81.

[0096] The material of the media 85 introduced in the media introduction step S17 does not have to be zirconia. For example, the material of the media 85 may be alumina balls or other ceramics. It is sufficient that the media 85 is in a powder form that is harder than the element body 20 and has a particle size larger than the maximum dimension L of a line segment connecting two points on the opening edge 25 of the recess 24 in the outer surface 21 of the element body 20.

[0097] The particle size of the media 85 introduced in the media introduction step S17 may be less than 0.05 mm or greater than 5.0 mm. The particle size of the media 85 may be changed as appropriate depending on the size of the electronic component 10 to be manufactured and the size of the recess 24.

[0098] The total amount of media 85 introduced into the reaction vessel 81 in the media introduction step S17 may be less than 0.1 times the volume of the element body 20. The total amount of media 85 introduced may be changed as appropriate depending on the design value of the bath load.

[0099] In the internal electrode exposing step S21, the method for removing the glass film 51 is not limited to laser cutting. For example, the first internal electrode 41 and the second internal electrode 42 may be exposed by using methods such as ion milling and polishing.

[0100] In the internal electrode exposing step S21, the range of removal of the glass film 51 is not limited to the example in the above embodiment. It is sufficient that at least the first internal electrode 41 and the second internal electrode 42 are electrically connected to the corresponding first base electrode 61A and second base electrode 62A.

[0101] The second curing step S23 is not limited to heating the conductive paste. For example, if the conductive paste is made of a material that is cured by ultraviolet light irradiation, the conductive paste may be cured by ultraviolet light irradiation.

[0102] <Supplementary Notes> The technical concepts that can be derived from the above embodiments and modified examples are described below. [1] An electronic component comprising an element body and a glass film covering an outer surface of the element body, wherein the outer surface of the element body has a recess that is recessed relative to its surroundings, the material of the glass film contains an organosilane compound, the glass film has a plurality of voids therein, and when viewed in cross section perpendicular to the outer surface of the element body, at a portion of the glass film covering the recess, the ratio of a total area of ​​the plurality of voids to a cross-sectional area of ​​the glass film is 0.3% or more and 30% or less.

[0103] [2] The electronic component according to [1], wherein the material of the glass film includes one or more selected from an organic silane compound, an organic titanium compound, an organic aluminum compound, and an organic zirconium compound.

[0104] [3] The electronic component according to [1] or [2], wherein the glass film has a plurality of the voids therein. [4] The electronic component according to any one of [1] to [3], wherein, when viewed in cross section perpendicular to the outer surface of the element body, at a portion of the glass film covering the recess, the ratio of the total area of ​​the plurality of voids to the cross-sectional area of ​​the glass film is 0.3% or more.

[0105] [5] An electronic component according to any one of [1] to [4], wherein, when viewed in cross section perpendicular to the outer surface of the element body, in the portion of the glass film covering the recess, the ratio of the total area of ​​the plurality of voids to the cross-sectional area of ​​the glass film is 30% or less.

[0106] [6] The electronic component according to any one of [1] to [5], wherein the average thickness of the glass film is 15 nm or more and 10 μm or less. [7] The electronic component according to any one of [1] to [6], wherein, when the portion of the outer surface of the element body excluding the recesses is considered to be a flat portion, the average thickness of the glass film covering the recesses is greater than the average thickness of the glass film covering the flat portion.

[0107] [8] An electronic component described in any one of [1] to [7], wherein when the portion of the outer surface of the element body excluding the recess is considered to be a flat portion, when viewed in a cross section perpendicular to the outer surface of the element body, the ratio of the total area of ​​the plurality of voids to the cross-sectional area of ​​the glass film at the portion of the glass film covering the recess is higher than the ratio of the total area of ​​the plurality of voids to the cross-sectional area of ​​the glass film at the portion of the glass film covering the flat portion.

[0108] [9] The electronic component according to any one of [1] to [8], wherein the shortest distance between the void and the outer surface of the element body is 15 nm or more.

[10] When viewed in a cross section perpendicular to the outer surface of the element body, the area per void is 1 nm or less. ２ or more and 10,000 nm ２ An electronic component according to any one of [1] to [9] below.

[0109]

[11] An electronic component according to any one of [1] to

[10] , wherein when viewed in cross section perpendicular to the outer surface of the element body, when multiple line segments connecting two points on the outer edge of the void are imagined, the line segment among the multiple line segments that has the longest distance between the two points is defined as a first line segment, and the line segment among the multiple line segments that passes through the midpoint of the first line segment and is perpendicular to the first line segment is defined as a second line segment, the dimension of the first line segment is 1.01 times or more and 10 times or less the dimension of the second line segment.

[0110]

[12] The electronic component according to any one of [1] to

[11] , wherein the maximum dimension of a line segment connecting two points on the opening edge of the recess is 0.5 μm or more and 20 μm or less.

[13] The electronic component according to any one of [1] to

[12] , wherein the maximum depth of the recess is 0.3 μm or more and 10 μm or less.

[0111]

[14] The electronic component according to any one of [1] to

[13] , wherein the arithmetic mean roughness of the recesses in the outer surface of the element body is 6 nm or more and 500 nm or less.

[15] A method for manufacturing an electronic component, comprising: an element body preparation step of preparing an element body, an element body introduction step of introducing the element body into a reaction vessel, a solution introduction step of introducing into the reaction vessel one or more selected from a metal alkoxide and a metal alkoxide precursor and an organosilane compound, a film formation step of forming a glass film on the outer surface of the element body by stirring the reaction vessel and hydrolyzing and condensation polymerizing the metal alkoxide, and a media introduction step of introducing into the reaction vessel powder media that is harder than the element body and has a particle size larger than the maximum dimension of a line segment connecting two points on the edge of an opening of the recesses in the outer surface of the element body, wherein the media introduction step is performed before or during the film formation step.

[0112] 10...Electronic component 20...Element body 21...Outer surface 51...Glass film 52...Outer surface 53...Air gap T1...Thickness T2...Thickness W...First line segment H...Second line segment 85...Media

Claims

1. An electronic component comprising: an element body; and a glass film covering an outer surface of the element body, wherein the outer surface of the element body has a recess that is recessed relative to its surroundings, and the glass film has an internal void.

2. The electronic component according to claim 1, wherein the material of the glass film contains one or more compounds selected from the group consisting of organic silane compounds, organic titanium compounds, organic aluminum compounds, and organic zirconium compounds.

3. The electronic component according to claim 1 or 2, wherein the glass film has a plurality of the voids therein.

4. An electronic component according to any one of claims 1 to 3, wherein, when viewed in cross section perpendicular to the outer surface of the element body, in the portion of the glass film covering the recess, the ratio of the total area of ​​the plurality of voids to the cross-sectional area of ​​the glass film is 0.3% or more.

5. The electronic component according to any one of claims 1 to 4, wherein, when viewed in a cross section perpendicular to the outer surface of the element body, in a portion of the glass film covering the recess, the ratio of the total area of ​​the plurality of voids to the cross-sectional area of ​​the glass film is 30% or less.

6. The electronic component according to any one of claims 1 to 5, wherein the average thickness of the glass film is 15 nm or more and 10 μm or less.

7. An electronic component according to any one of claims 1 to 6, wherein when the portion of the outer surface of the element body excluding the recesses is considered to be flat, the average thickness of the glass film covering the recesses is greater than the average thickness of the glass film covering the flat portion.

8. An electronic component as claimed in any one of claims 1 to 7, wherein, when the portion of the outer surface of the element excluding the recess is considered to be flat, when viewed in a cross section perpendicular to the outer surface of the element, the ratio of the total area of ​​the plurality of voids to the cross-sectional area of ​​the glass film at the portion of the glass film covering the recess is higher than the ratio of the total area of ​​the plurality of voids to the cross-sectional area of ​​the glass film at the portion of the glass film covering the flat portion.

9. The electronic component according to any one of claims 1 to 8, wherein the shortest distance between the gap and the outer surface of the element body is 15 nm or more.

10. When viewed in cross section perpendicular to the outer surface of the body, the area of ​​each of the voids is 1 nm ２ or more and 10,000 nm ２ The electronic component according to any one of claims 1 to 9, wherein:

11. An electronic component according to any one of claims 1 to 10, wherein, when viewed in cross section perpendicular to the outer surface of the body, a number of line segments are imagined connecting two points on the outer edge of the void, and, among the plurality of line segments, the line segment with the longest distance between the two points is defined as a first line segment, and, among the plurality of line segments, the line segment that passes through a midpoint of the first line segment and is perpendicular to the first line segment is defined as a second line segment, and the dimension of the first line segment is 1.01 to 10 times the dimension of the second line segment.

12. The electronic component according to any one of claims 1 to 11, wherein the maximum dimension of a line segment connecting two points on the edge of the opening of the recess is not less than 0.5 μm and not more than 20 μm.

13. The electronic component according to any one of claims 1 to 12, wherein the maximum depth of the recess is not less than 0.3 μm and not more than 10 μm.

14. The electronic component according to any one of claims 1 to 13, wherein the arithmetic mean roughness of the recesses on the outer surface of the element body is not less than 6 nm and not more than 500 nm.

15. A method for manufacturing an electronic component, comprising: an element preparation step of preparing an element; an element introduction step of introducing the element into a reaction vessel; a solution introduction step of introducing one or more selected from a metal alkoxide and a metal alkoxide precursor and an organosilane compound into the reaction vessel; a film formation step of forming a glass film on the outer surface of the element by stirring the reaction vessel and hydrolyzing and condensation polymerizing the metal alkoxide; and a media introduction step of introducing into the reaction vessel media which is in a powder form harder than the element and has a particle size larger than the maximum dimension of a line segment connecting two points on the edge of an opening of a recess on the outer surface of the element, wherein the media introduction step is performed before or during the film formation step.

Images