Radio frequency power supply system and semiconductor process device

Abstract

The present application relates to the technical field of radio-frequency applications. Disclosed are a radio-frequency power supply system and a semiconductor process device. The radio frequency power supply system comprises a radio frequency power generation circuit, a switching circuit and an impedance matching circuit, wherein the radio frequency power generation circuit is used for accessing an external alternating-current voltage source and outputting a radio frequency power; the switching circuit is connected to an output end of the radio frequency power generation circuit, is provided with a first output branch and a second output branch, and can output, by means of the first output branch or the second output branch, the radio frequency power output by the radio frequency power generation circuit; the impedance matching circuit is provided with at least two impedance matching branches and is used for providing impedance matching for the radio frequency power output by the radio frequency power generation circuit; and each impedance matching branch is connected to an output end of the first output branch, the impedance values of the impedance matching branches being different from each other. The embodiments of the present application can reduce the time for performing impedance matching between the radio frequency power generation circuit and a reaction chamber, thereby improving the process efficiency.

Description

RF power systems and semiconductor process equipment Technical Field

[0001] The present application relates to the field of radio frequency application technology, and in particular to a radio frequency power supply system and semiconductor process equipment. Background Art

[0002] The RF power system is a device used to generate RF power signals. It is a core component of semiconductor process equipment and is used to provide energy to equipment that generates plasma for material processing.

[0003] In related technologies, an RF power supply system provides RF signal energy to a reaction chamber to generate plasma. To match the output impedance of the RF power generation circuit with the impedance of the reaction chamber, an impedance matcher is required between the RF power generation circuit and the reaction chamber. The RF power generation circuit supplies RF signal energy to the reaction chamber through the impedance matcher. However, in existing RF power supply systems, conventional matchers are used for a wide range of impedance operations in processes requiring relatively constant impedance matching. This results in a lengthy impedance matching process and reduces process efficiency.

[0004] Utility Model Content

[0005] The purpose of this application is to provide a radio frequency power supply system and semiconductor process equipment, aiming to reduce the time for impedance matching between the radio frequency power generating circuit and the reaction chamber, thereby improving process efficiency.

[0006] The present invention provides a radio frequency power supply system, comprising:

[0007] A radio frequency power generating circuit, used to connect to an external AC voltage source and output radio frequency power;

[0008] a switching circuit connected to the output end of the radio frequency power generating circuit, having a first output branch and a second output branch, and capable of outputting the radio frequency power output by the radio frequency power generating circuit through the first output branch or the second output branch; and

[0009] An impedance matching circuit has at least two groups of impedance matching branches, which are used to provide impedance matching for the radio frequency power output by the radio frequency power generating circuit; each of the impedance matching branches is respectively connected to the output end of the first output branch, and the impedance values ​​of each of the impedance matching branches are different from each other.

[0010] Furthermore, the impedance matching circuit includes:

[0011] Resonator circuit;

[0012] A multi-segment inductor having at least two groups of impedance coil segments, wherein a first end of one impedance coil segment is connected to a second end of another impedance coil segment or to a first end of the resonant subcircuit;

[0013] Switching devices, the number of the switching devices is the same as the number of the impedance coil segments, a first end of the switching device is connected to the second end of the impedance coil segment, and a second end of the switching device is connected to the second end of the resonant subcircuit.

[0014] Furthermore, the switching device is selected from a path selector, a relay, a transistor and / or a MOS tube.

[0015] Furthermore, the impedance values ​​of the impedance matching branches increase monotonically according to a preset order.

[0016] Furthermore, the radio frequency power generating circuit includes:

[0017] The rectifier circuit is used to receive external AC power and rectify it into DC power;

[0018] a first filtering subcircuit, connected to the output end of the rectifier subcircuit, for filtering the rectified DC power to obtain filtered DC power;

[0019] an inverter subcircuit, connected to the output end of the first filter subcircuit, and configured to invert the filtered DC power into AC power;

[0020] a voltage conversion subcircuit, connected to the output end of the inversion subcircuit, for performing voltage conversion on the inverted AC power; and

[0021] The second filtering subcircuit is connected to the output end of the voltage conversion subcircuit and is used to filter the AC power obtained by voltage conversion to obtain radio frequency power.

[0022] Furthermore, the input end of the first output branch is connected to the output end of the RF power generating circuit, and the output end of the first output branch is connected to the output end of the impedance matching circuit;

[0023] The input end of the second output branch is connected to the output end of the radio frequency power generating circuit, and the output end of the second output branch is used to connect to an external reaction chamber or an external matching device.

[0024] Furthermore, the radio frequency power supply system further includes a power regulation circuit;

[0025] The power regulating circuit is connected to the output end of the RF power generating circuit, and is used to collect the RF power output by the RF power generating circuit and output a first regulating signal so that the RF power generating circuit outputs the RF power corresponding to the first regulating signal.

[0026] Furthermore, the power regulation circuit includes:

[0027] A power sensor connected to the output end of the radio frequency power generating circuit;

[0028] an analog-to-digital converter connected to an output end of the power sensor; and

[0029] The power regulation module is connected to the output end of the analog-to-digital converter and is used to output a corresponding regulation signal according to the collected radio frequency power.

[0030] Furthermore, the power adjustment module is connected to the impedance matching circuit, and is used to collect the matching power output by the impedance matching circuit and output a second adjustment signal to turn on the impedance matching branch corresponding to the second adjustment signal.

[0031] The present application also provides a semiconductor process equipment, including the above-mentioned radio frequency power supply system.

[0032] The beneficial effects of the present application are as follows: the RF power output by the RF power generating circuit and the impedance matching circuit of the multi-stage impedance matching structure are received through the switching circuit. For a process environment with a relatively constant impedance matching amount, the switching circuit can be set to output the RF power to the impedance matching circuit, and then the impedance matching circuit provides impedance matching for the RF power output by the RF power generating circuit, so as to adapt to various process environments with relatively constant impedance matching amounts, reduce the time for impedance matching between the RF power generating circuit and the reaction chamber, and thus improve process efficiency. For a process environment with a large variation in impedance matching amount, the switching circuit can be set to shield the impedance matching circuit, and a conventional matcher can be used to perform a large range of impedance matching operations or directly output RF power to adapt to a process environment with a large variation in impedance matching amount. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] FIG1 is a schematic structural diagram of a radio frequency power supply system provided in the first embodiment of the present application.

[0034] FIG2 is a schematic structural diagram of an impedance matching circuit provided in an embodiment of the present application.

[0035] FIG3 is a schematic structural diagram of a radio frequency power generating circuit provided in the first embodiment of the present application.

[0036] FIG4 is a schematic structural diagram of a radio frequency power generating circuit provided in a second embodiment of the present application.

[0037] FIG5 is a schematic structural diagram of a radio frequency power supply system provided in a second embodiment of the present application. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solutions and advantages of this application more clear, the following further describes this application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0039] It should be noted that the terms "first", "second", "third", "fourth", etc. (if any) in the specification of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or circuits is not necessarily limited to those steps or circuits clearly listed, but may include other steps or circuits that are not clearly listed or inherent to these processes, methods, products or devices.

[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application pertains. The terms used herein are for the purpose of describing the embodiments of this application only and are not intended to limit this application.

[0041] RF power systems are devices used to generate RF power signals and are core components of semiconductor processing equipment. All equipment that generates plasma for material processing requires RF power systems to provide energy. Process manufacturing equipment for integrated circuits, solar cells, and LEDs (Light Emitting Diodes), such as etchers, PVD (Physical Vapor Deposition), PECVD (Plasma Enhanced Chemical Vapor Deposition), and ALD (Atomic Layer Deposition), are all equipped with RF power systems of varying power specifications.

[0042] RF power systems used in plasma processes typically consist of an RF power generation circuit and an impedance matcher. The RF power generation circuit generates an RF signal with a specific power level and frequency. The impedance matcher, placed between the plasma reaction chamber and the RF power generator, matches the load impedance of the plasma reaction chamber with the output impedance of the RF power generation circuit. This ensures that the power generated by the RF power generator is effectively delivered to the plasma chamber, thereby stimulating sufficient plasma to achieve process requirements.

[0043] However, in the related art, when the RF power supply system operates in a process environment where the impedance matching amount is relatively constant or the impedance matching amount varies greatly, a conventional impedance matcher is used to perform a large range of impedance matching operations. For a process environment where the impedance matching amount is relatively constant, the use of a conventional impedance matcher not only prolongs the impedance matching time, but also easily reduces the process efficiency, thereby hindering the process.

[0044] Based on this, the present application provides a radio frequency power supply system and semiconductor process equipment, which realizes multi-stage impedance matching through a multi-stage impedance matching structure to adapt to various process environments with relatively constant impedance matching amounts, thereby reducing the time for impedance matching between the radio frequency power generating circuit and the reaction chamber.

[0045] 1 , in one embodiment, a radio frequency power supply system includes a radio frequency power generating circuit 1 , a switching circuit 2 , and an impedance matching circuit 3 .

[0046] The RF power generating circuit 1 is used to connect to an external AC voltage source and output RF power. Specifically, the RF power generating circuit 1 is powered on after connecting to the external AC voltage source and outputs RF power with a certain power level and a certain frequency to the switching circuit 2.

[0047] The switching circuit 2 is connected to the output end of the RF power generating circuit 1. The switching circuit 2 has a first output branch and a second output branch, and can output the RF power output by the RF power generating circuit 1 through the first output branch or the second output branch. Specifically, the switching circuit 2 has two power output modes: one power output mode is to output the RF power output by the RF power generating circuit 1 through the first output branch, and the other power output mode is to output the RF power output by the RF power generating circuit 1 through the second output branch. When the switching circuit 2 outputs the RF power output by the RF power generating circuit 1 through its first output branch, the impedance matching circuit 3 is connected to the RF power output by the RF power generating circuit 1.

[0048] The impedance matching circuit 3 is used to provide impedance matching for the RF power output by the RF power generating circuit 1. The impedance matching circuit 3 has at least two groups of impedance matching branches, each impedance matching branch is respectively connected to the output end of the first output branch, and the impedance values ​​of each impedance matching branch are different. Specifically, the impedance matching branch is connected between the RF power generating circuit 1 and the external reaction chamber to provide impedance matching for the communication path. Each impedance matching branch has a different impedance value. By switching on the impedance matching branch, the matching efficiency of the output of the impedance matching circuit 3 can be switched. By detecting the matching efficiency of the output of the impedance matching circuit 3 when each impedance matching branch is turned on separately, the impedance matching branch that can make the RF power generating circuit 1 and the external reaction chamber in the optimal matching state can be identified, and then the impedance matching branch provided by the impedance matching branch for the RF power output by the RF power generating circuit 1 can be maintained.

[0049] In actual application, the RF power generating circuit 1 outputs RF power with a certain power level and a certain frequency to the switching circuit 2. If the RF power supply system operates in a process environment with a relatively constant impedance matching amount, the switching circuit 2 is set to output the RF power output by the RF power generating circuit 1 through the first output branch, and then the impedance matching circuit 3 is used to provide impedance matching for the RF power output by the RF power generating circuit 1. By implementing multi-stage impedance matching in a multi-stage impedance matching structure, it can adapt to various process environments with relatively constant impedance matching amounts, and can provide a technical effect of fast matching for process environments with relatively constant impedance matching amounts. If the RF power supply system operates in a process environment with a large change in impedance matching amount, the switching circuit 2 is set to output the RF power output by the RF power generating circuit 1 through the second output branch, and then the impedance matching circuit 3 is shielded. The output end of the second output branch can be connected to a conventional matcher, and a conventional matcher is used to perform a large-scale impedance matching operation to adapt to a process environment with a large change in impedance matching amount. In some embodiments, the output end of the second output branch can also be directly connected to an external reaction chamber.

[0050] In some embodiments, specifically, the input end of the first output branch is connected to the output end of the RF power generating circuit 1, the output end of the first output branch is connected to the output end of the impedance matching circuit 3, the input end of the second output branch is connected to the output end of the RF power generating circuit 1, and the output end of the second output branch is used to connect to an external reaction chamber or an external matcher.

[0051] Referring to FIG. 2 , in one embodiment, the impedance matching circuit 3 includes a multi-segment inductor 31, a switch device 32, and a resonant subcircuit 33. The impedance coil segments are provided in at least two groups, and the number of switch devices 32 is the same as the number of impedance coil segments. The first end of an impedance coil segment is connected to the second end of another impedance coil segment or to the first end of the resonant subcircuit 33. The first end of a switch device 32 is connected to the second end of an impedance coil segment, and the second end of a switch device 32 is connected to the second end of the resonant subcircuit 33.

[0052] Specifically, the multi-segment inductor 31 is an isolated inductor structure. The primary side coil of the multi-segment inductor 31 is connected to the output end of the switching circuit 2. The secondary side coil of the multi-segment inductor 31 is composed of at least two groups of impedance coil segments. Each impedance coil segment has a certain amount of impedance. Each impedance coil segment, the switching device 32 and the resonant subcircuit 33 are connected in the above manner, so that a group of switching devices 32 and at least one group of impedance coil segments together constitute a group of impedance matching branches. For example, the first group of impedance matching branches can be composed of the first group of switching devices 32 and the first group of impedance coil segments (the first end of the first group of impedance coil segments is connected to the first end of the resonant subcircuit 33), the second group of impedance matching branches can be composed of the second group of switching devices 32, the first group of impedance coil segments and the second group of impedance coil segments (the first end of the second group of impedance coil segments is connected to the second end of the first group of impedance coil segments), the third group of impedance matching branches can be composed of the third group of switching devices 32, the first group of impedance coil segments, the second group of impedance coil segments and the third group of impedance coil segments (the first end of the third group of impedance coil segments is connected to the second end of the second group of impedance coil segments), and so on. The last group of impedance matching branches can be composed of the last group of switching devices 32 and all impedance coil segments, so that each group of impedance matching branches has a different impedance. In actual use, one set of switch devices 32 is closed to conduct the impedance matching branch corresponding to the switch device 32, and the resonant subcircuit 33 is connected to the conducted impedance matching branch. The impedance matching branch provides impedance matching to the external reaction chamber through the resonant subcircuit 33. The resonant subcircuit 33 converts the electric field energy in the capacitor and the magnetic field energy in the inductor, so that the total electric field energy and magnetic field energy remain constant at all times. The RF power generating circuit 1 does not need to convert energy back and forth with the capacitor or inductor, and only needs to supply the electrical energy consumed by the external reaction chamber. For example, when only the first set of switch devices 32 is closed, the first set of impedance matching branches is conducted, that is, the first set of impedance coil segments is connected to the resonant subcircuit 33, and the first set of impedance coil segments provides impedance matching to the external reaction chamber through the resonant subcircuit 33. When only the second set of switch devices 32 is closed, the second set of impedance matching branches is conducted, that is, the second set of impedance coil segments and the second set of impedance coil segments are connected to the resonant subcircuit 33, and the second set of impedance coil segments and the second set of impedance coil segments jointly provide impedance matching to the external reaction chamber through the resonant subcircuit 33.

[0053] More specifically, each group of impedance coil segments constitutes the secondary side of the multi-segment inductor 31. The first end of the i-th impedance coil segment is directly connected to the first end of the resonant sub-circuit 33 (when i=1) or is sequentially connected to the first end of the resonant sub-circuit 33 through the i-1, i-2, ..., 1 impedance coil segments (when i>1), so as to be connected to the external reaction chamber through the first end of the resonant sub-circuit 33. The second end of the i-th impedance coil segment is respectively connected to the first end of the i+1-th impedance coil segment and the first end of the i-th switching device 32. The second end of the i-th switching device 32 is connected to the external reaction chamber through the second end of the resonant sub-circuit 33. When the i-th switching device 32 is closed, the i-th group of impedance matching branches (composed of the i-th switching device 32 and the i, i-1, i-2, ..., 1 impedance coil segments) is connected to the resonant sub-circuit 33. Exemplarily, the first end of the first group of impedance coil segments is connected to the external reaction chamber through the first end of the resonant subcircuit 33, the second end of the first group of impedance coil segments is respectively connected to the first end of the second group of impedance coil segments and the first end of the first group of switching devices 32, the second end of the first group of switching devices 32 is connected to the external reaction chamber through the second end of the resonant subcircuit 33, the first end of the second group of impedance coil segments is connected to the first end of the resonant subcircuit 33 through the first group of impedance coil segments to indirectly connect to the external reaction chamber, the second end of the second group of impedance coil segments is respectively connected to the first end of the third group of impedance coil segments and the first end of the second group of switching devices 32, the second end of the second group of switching devices 32 is connected to the external reaction chamber through the second end of the resonant subcircuit 33, and so on. The first end of the last group of impedance coil segments is connected to the first end of the resonant subcircuit 33 through all other impedance coil segments to indirectly connect to the external reaction chamber, the second end of the last group of impedance coil segments is connected to the first end of the last group of switching devices 32, and the second end of the last group of switching devices 32 is connected to the external reaction chamber through the second end of the resonant subcircuit 33. The resonant subcircuit 33 includes a first inductor L1, a first capacitor C1, and a second capacitor C2. One end of the first capacitor C1 is connected to the first end of the first group of impedance coil segments to serve as the first end of the resonant subcircuit 33. One end of the second capacitor C2 is connected to the second end of each switching device 32 to serve as the second end of the resonant subcircuit 33. The other end of the second capacitor C2 is connected to one end of the first inductor L1. The other end of the first inductor L1 and the other end of the first capacitor C1 are respectively connected to an external reaction chamber. The first capacitor C1 and the second capacitor C2 are used to provide electric field energy, and the first inductor L1 is used to provide magnetic field energy.

[0054] In some embodiments, the switch device 32 is a selector, a relay, a transistor and / or a MOS tube.

[0055] In some embodiments, the impedance values ​​of the impedance matching branches increase monotonically in a predetermined order. For example, seven groups of impedance matching branches may be provided, and the impedance values ​​of the first to seventh groups of impedance matching branches are 10 ohms, 20 ohms, 30 ohms, 40 ohms, 50 ohms, 60 ohms, and 70 ohms, respectively.

[0056] 3 and 4 , in a more specific embodiment, the RF power generation circuit 1 includes a rectifier subcircuit 11, a first filter subcircuit 12, an inverter subcircuit 13, a voltage conversion subcircuit 14, and a second filter subcircuit 15. The rectifier subcircuit 11 is configured to receive external AC power and rectify it into DC power. The first filter subcircuit 12 is connected to the output of the rectifier subcircuit 11 and is configured to filter the rectified DC power to obtain filtered DC power. The inverter subcircuit 13 is connected to the output of the first filter subcircuit 12 and is configured to invert the filtered DC power into AC power. The voltage conversion subcircuit 14 is connected to the output of the inverter subcircuit 13 and is configured to perform voltage conversion on the inverted AC power. The second filter subcircuit 15 is connected to the output of the voltage conversion subcircuit 14 and is configured to filter the AC power obtained through voltage conversion to obtain RF power.

[0057] Specifically, the rectifier subcircuit 11 is connected to the external AC power and rectified into DC power. The external AC power can be single-phase input AC power (SINGLE PHASE) or three-phase input AC power (THREE PHASE). The DC power obtained after the rectification process is filtered by the first filtering subcircuit 12. The first filtering subcircuit 12 filters out the AC interference in the DC power. The DC power filtered by the first filtering subcircuit 12 is input to the inverter subcircuit 13 and inverted into AC power. The voltage conversion subcircuit 14 performs voltage conversion (boost processing or buck processing) on ​​the AC power obtained by the inversion processing to obtain AC power after voltage conversion. The AC power after voltage conversion is filtered by the second filtering subcircuit 15. The second filtering subcircuit 15 filters out the interference signal in the voltage conversion. The AC power output after filtering by the second filtering subcircuit 15 is the RF power.

[0058] As shown in Figure 3, in this embodiment, the rectifier circuit 11 is used to access single-phase input AC power. The rectifier circuit 11 includes a first diode D1, a second diode D2, a third diode D3 and a fourth diode D4. The first diode D1, the second diode D2, the third diode D3 and the fourth diode D4 constitute a bridge rectifier structure for accessing single-phase input. The bridge rectifier structure outputs DC power through a bus.

[0059] As shown in Figure 4, in this embodiment, the rectifier circuit 11 is used to access the three-phase input AC power. The rectifier circuit 11 includes a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5 and a sixth diode D6. The first diode D1, the second diode D2, the third diode D3, the fourth diode D4, the fifth diode D5 and the sixth diode D6 constitute a bridge rectifier structure for accessing the three-phase input. The bridge rectifier structure outputs DC power through a bus.

[0060] The first filter sub-circuit 12 includes a second inductor L2 and a third capacitor C3. The second inductor L2 is connected in series between the rectifier sub-circuit 11 and the inverter sub-circuit 13, and the third capacitor C3 is connected across the two ends of the rectifier sub-circuit 11. The second inductor L2 serves as a filter inductor, and the third capacitor C3 serves as a filter capacitor. The second inductor L2 and the third capacitor C3 together constitute a composite filter structure.

[0061] The inverter sub-circuit 13 includes a first switch tube Q1 , a second switch tube Q2 , a third switch tube Q3 and a fourth switch tube Q4 , which form an H-bridge inverter structure.

[0062] The voltage conversion sub-circuit 14 includes a transformer T1 and a fourth capacitor C4. One end of the primary side of the transformer T1 is connected to the first switching transistor Q1 and the second switching transistor Q2 through the fourth capacitor C4. The other end of the primary side of the transformer T1 is connected to the third switching transistor Q3 and the fourth switching transistor Q4. The secondary side of the transformer T1 is connected to the second filtering sub-circuit 15.

[0063] The second filtering sub-circuit 15 includes a third inductor L3 and a fifth capacitor C5. The third inductor L3 is connected in series between the secondary side of the transformer T1 and the switching circuit 2. The fifth capacitor C5 is connected across the secondary side of the transformer T1. The third inductor L3 serves as a filtering inductor, and the fifth capacitor C5 serves as a filtering capacitor. The third inductor L3 and the fifth capacitor C5 together form a composite filtering structure.

[0064] Referring to Figure 5 , the RF power supply system further includes a power regulation circuit 4. The power regulation circuit 4 is connected to the output terminal of the RF power generating circuit 1 and is configured to collect the RF power output by the RF power generating circuit 1 and output a first regulation signal, so that the RF power generating circuit 1 outputs the RF power corresponding to the first regulation signal.

[0065] Specifically, the power regulation circuit 4 collects the RF power output by the RF power generating circuit 1, and outputs a first regulation signal according to the value of the RF power. When the value of the RF power is greater than the preset upper power limit threshold, the power regulation circuit 4 outputs the first regulation signal to reduce the RF power. When the value of the RF power is less than the preset lower power limit threshold, the power regulation circuit 4 outputs the first regulation signal to increase the RF power.

[0066] More specifically, the power regulation circuit 4 includes a power sensor 41, an analog-to-digital converter 42, and a power regulation module 43. The power sensor 41 is connected to the output of the RF power generation circuit 1, the analog-to-digital converter 42 is connected to the output of the power sensor 41, and the power regulation module 43 is connected to the output of the analog-to-digital converter 42, and is configured to output a corresponding regulation signal based on the collected RF power.

[0067] In actual application, the power sensor 41 collects the power output from the output end of the RF power generating circuit 1 to obtain a collection signal in the form of voltage and current. The analog-to-digital converter 42 obtains the collection signal of the power sensor 41, converts the collection signal into analog-to-digital, and obtains a digital signal. The power adjustment module 43 receives the digital signal, determines the RF power currently output by the RF power generating circuit 1 according to the specific value of the digital signal, and then outputs a corresponding first adjustment signal to the RF power generating circuit 1 according to the digital signal, so that the RF power generating circuit 1 outputs the RF power corresponding to the first adjustment signal.

[0068] More specifically, the power adjustment module 43 is connected to the impedance matching circuit 3 and is configured to collect the matching power output by the impedance matching circuit 3 and output a second adjustment signal to turn on the impedance matching branch corresponding to the second adjustment signal.

[0069] In actual application, the power regulation module 43 performs a frequency sweep on the matching power signal output by the impedance matching circuit 3. Frequency sweeping is to obtain the matching power output by the impedance matching circuit 3. The matching power output by the impedance matching circuit 3 can be collected by a corresponding sensor, and then the collected signal of the sensor is obtained to obtain the matching power output by the impedance matching circuit 3. The obtained matching power output by the impedance matching circuit 3 is compared with a preset matching power range. When the obtained matching power is not within the matching power range, the power regulation module 43 outputs a second adjustment signal to control the impedance matching branch to switch the impedance matching branch to conduct until the obtained matching power is within the matching power range. If all impedance matching branches cannot provide the required impedance matching, an alarm signal is output or the impedance matching circuit 3 is controlled to stop working.

[0070] An embodiment of the present application also provides a semiconductor process equipment, which includes the above-mentioned RF power supply system. The specific structure of the RF power supply system refers to the above-mentioned embodiment. Since the semiconductor process equipment provided by the embodiment of the present application adopts all the technical solutions of all the above-mentioned embodiments, it has at least all the beneficial effects brought by the technical solutions of the above-mentioned embodiments, which will not be repeated here one by one.

[0071] In summary, the RF power supply system and semiconductor process equipment provided in the embodiments of the present application receive the RF power output by the RF power generating circuit and the impedance matching circuit of the multi-stage impedance matching structure through a switching circuit. For a process environment with a relatively constant impedance matching amount, the switching circuit can be set to output the RF power to the impedance matching circuit, and then the impedance matching circuit provides impedance matching for the RF power output by the RF power generating circuit to adapt to various process environments with relatively constant impedance matching amounts, reduce the time for impedance matching between the RF power generating circuit and the reaction chamber, and thus improve process efficiency. For a process environment with a large change in impedance matching amount, the switching circuit can be set to shield the impedance matching circuit, and a conventional matcher can be used to perform a large range of impedance matching operations or directly output RF power to adapt to a process environment with a large change in impedance matching amount.

[0072] It should be understood that in this application, "at least one (item)" means one or more, and "plurality" means two or more. "And / or" is used to describe the association relationship of associated objects, indicating that three relationships may exist. For example, "A and / or B" can mean: only A exists, only B exists, and A and B exist at the same time, where A and B can be singular or plural. The character " / " generally indicates that the previous and next associated objects are in an "or" relationship. "At least one of the following items" or similar expressions refers to any combination of these items, including any combination of single items or plural items. For example, at least one of a, b or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, c can be single or multiple.

[0073] The preferred embodiments of the present invention are described above with reference to the accompanying drawings, but are not intended to limit the scope of the present invention. Any modifications, equivalent substitutions, and improvements made by those skilled in the art without departing from the scope and essence of the present invention should be within the scope of the present invention.

Claims

1. A radio frequency power supply system, characterized in that: include: A radio frequency power generating circuit, used for connecting to an external AC voltage source and outputting radio frequency power; a switching circuit connected to the output end of the radio frequency power generating circuit, having a first output branch and a second output branch, and capable of outputting the radio frequency power output by the radio frequency power generating circuit through the first output branch or the second output branch; as well as The impedance matching circuit has at least two groups of impedance matching branches, which are used to provide impedance matching for the RF power output by the RF power generating circuit; each of the impedance matching branches is respectively connected to the output end of the first output branch, and the impedance value of each of the impedance matching branches is different from each other.

2. The radio frequency power supply system according to claim 1, characterized in that: The impedance matching circuit comprises: Resonator circuit; A multi-segment inductor having at least two groups of impedance coil segments, wherein a first end of one impedance coil segment is connected to a second end of another impedance coil segment or to a first end of the resonant subcircuit; Switching devices, the number of the switching devices is the same as the number of the impedance coil segments, a first end of the switching device is connected to a second end of the impedance coil segment, and a second end of the switching device is connected to the second end of the resonant subcircuit.

3. The radio frequency power supply system according to claim 2, characterized in that: The switch device is selected from a path selector, a relay, a transistor and / or a MOS tube.

4. The radio frequency power supply system according to any one of claims 1 to 3, characterized in that: The impedance values ​​of the impedance matching branches increase monotonically according to a preset order.

5. The radio frequency power supply system according to claim 1, characterized in that: The radio frequency power generating circuit comprises: A rectifier circuit, used for receiving external AC power and rectifying it into DC power; A first filtering subcircuit, connected to the output end of the rectifier subcircuit, for filtering the rectified DC power to obtain filtered DC power; an inverter subcircuit, connected to the output end of the first filter subcircuit, and used for inverting the filtered DC power into AC power; a voltage conversion subcircuit, connected to the output end of the inverter subcircuit, for performing voltage conversion on the AC power obtained by inversion; and The second filtering subcircuit is connected to the output end of the voltage conversion subcircuit and is used to convert the voltage The AC power is filtered and the RF power is obtained.

6. The radio frequency power supply system according to claim 1, characterized in that: The input end of the first output branch is connected to the output end of the RF power generating circuit, and the output end of the first output branch is connected to the output end of the impedance matching circuit; The input end of the second output branch is connected to the output end of the radio frequency power generating circuit, and the output end of the second output branch is used to connect to an external reaction chamber or an external matching device.

7. The radio frequency power supply system according to claim 1, characterized in that: The radio frequency power supply system also includes a power regulation circuit; The power regulating circuit is connected to the output end of the RF power generating circuit, and is used to collect the RF power output by the RF power generating circuit and output a first regulating signal so that the RF power generating circuit outputs the RF power corresponding to the first regulating signal.

8. The radio frequency power supply system according to claim 7, characterized in that: The power regulation circuit comprises: A power sensor connected to the output end of the radio frequency power generating circuit; an analog-to-digital converter connected to an output end of the power sensor; and The power regulation module is connected to the output end of the analog-to-digital converter and is used to output a corresponding regulation signal according to the collected radio frequency power.

9. The radio frequency power supply system according to claim 8, characterized in that: The power adjustment module is connected to the impedance matching circuit, and is used to collect the matching power output by the impedance matching circuit and output a second adjustment signal to turn on the impedance matching branch corresponding to the second adjustment signal.

10. A semiconductor process equipment, characterized in that: A radio frequency power supply system comprising any one of claims 1 to 9.

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