Light-emitting unit and substrate processing device comprising same

Abstract

A light-emitting unit (12) and a substrate processing device (10) comprising same. The light-emitting unit (12) comprises: a light-emitting body (62) which extends substantially in a first direction, the light-emitting body (62) emitting UV radiation having a wavelength of about 100 nm to 400 nm; a first reflector (64) which partially surrounds the light-emitting body (62), the first reflector (64) comprising a reflector body (72), a first film (74), a second film (76) and a third film (78), wherein in a direction substantially perpendicular to the first direction, the second film (76) is located between the first film (74) and the third film (78); and a second reflector (66) which is farther away from the first reflector (64) than the light-emitting body (62), wherein the first reflector (64) directs the UV radiation towards the second reflector (66).

Description

Light Emitting Unit and Substrate Processing Apparatus Comprising the Same Technical Field

[0001] This application relates to a semiconductor device, including the design and manufacture of its components. Background Art

[0002] In the manufacturing processes of integrated circuits, displays, and solar panels, we typically form multiple dielectric, semiconductor, and conductor materials on substrates such as semiconductor wafers, glass plates, and metal plates. These layers are further processed to form feature structures such as electrical interconnections, dielectric layers, gates, and electrodes.

[0003] In certain processes, we use ultraviolet (UV) radiation to process multiple layers or feature structures formed on substrates. UV radiation devices have been widely used to utilize the UV light modification or photochemical reactions of materials to create substances on various processed items. Therefore, we have been seeking to improve the curing efficiency to increase the processing throughput, which requires a UV light emitting unit and a substrate processing apparatus comprising the same that can improve efficiency and have the desired material properties.

[0004] Although various UV light emitting units and technologies have been developed, we are still constantly seeking further improvements in UV radiation processing technologies.

[0005] Summary of the Invention

[0006] The following generally describes the basic features of this application to provide a basic understanding of some aspects of this application.

[0007] This application first provides a light emitting unit, which includes:

[0008] A light emitting body that generally extends along a first direction, and the light emitting body emits UV radiation with a wavelength of about 100 nm to 400 nm;

[0009] A first reflector that partially surrounds the light emitting body, and the first reflector includes:

[0010] A reflector body that defines an opening through which the UV radiation passes,

[0011] A first film that is located on the surface of the reflector body adjacent to the light emitting body, and in the thickness direction of the first film, has a reflectivity F74 for the UV radiation,

[0012] A second film that is located on the surface of the reflector body adjacent to the light emitting body, and in the thickness direction of the second film, has a reflectivity F76 for the UV radiation, where F76 < F74, and

[0013] a third film located on a surface of the reflector body adjacent to the light emitting body and having a reflectivity F78 for the UV radiation in a thickness direction of the third film, wherein F78>F76;

[0014] wherein, in a direction substantially perpendicular to the first direction, the second film is located between the first film and the third film; and

[0015] A second reflector is located farther from the first reflector than the light emitting body, wherein the first reflector directs the UV radiation toward the second reflector.

[0016] In some embodiments, a first gap is included between the first film and the second film.

[0017] In some embodiments, the first gap extends substantially along the first direction.

[0018] In some implementations, the first gap is located between the first film and the reflector body in a direction substantially perpendicular to the first direction.

[0019] In some implementations, the first gap is located between the second film and the reflector body in a direction substantially perpendicular to the first direction.

[0020] In some embodiments, a second gap is included between the second film and the third film.

[0021] In some embodiments, the second gap extends substantially along the first direction.

[0022] In some embodiments, 1 <F74 / F76≤1.12。

[0023] In some embodiments, a spacing h1 is defined between the light emitting body and the second film substantially perpendicular to the first direction, and a spacing d3 is defined between the first film and the third film substantially parallel to the first direction, wherein 2.5≤d3 / h1≤3.5.

[0024] The present application further provides a light emitting unit, which includes:

[0025] a light emitting body extending generally along a first direction, the light emitting body emitting UV radiation having a wavelength of about 100 nm to 400 nm;

[0026] a first reflector, which partially surrounds the light emitting body, and the first reflector comprises:

[0027] a reflector body defining an opening for passing said UV radiation,

[0028] The first dichroic film is located on the surface of the reflector body adjacent to the light-emitting body, and the first dichroic film has a thickness t1.

[0029] The second dichroic film is located on the surface of the reflector body adjacent to the light-emitting body, the second dichroic film has a thickness t2, and t2 < t1, and

[0030] The third dichroic film is located on the surface of the reflector body adjacent to the light-emitting body, the third dichroic film has a thickness t3, and t3 > t2.

[0031] Wherein, in a direction substantially perpendicular to the first direction, the second film is located between the first film and the third film; and

[0032] The second reflector is farther from the first reflector than the light-emitting body, and the first reflector directs the UV radiation to the second reflector.

[0033] In some embodiments, the first dichroic film includes 35 to 45 groups of alternately arranged high-refractive-index layers and low-refractive-index layers.

[0034] In some embodiments, the thickness of the high-refractive-index layer of the first dichroic film is 110 to 230 nm.

[0035] In some embodiments, the thickness of the low-refractive-index layer of the first dichroic film is 110 to 230 nm.

[0036] In some embodiments, the second dichroic film includes 25 to 35 groups of alternately arranged high-refractive-index layers and high-refractive-index layers.

[0037] In some embodiments, the thickness of the high-refractive-index layer of the second dichroic film is 115 to 280 nm.

[0038] In some embodiments, the thickness of the low-refractive-index layer of the second dichroic film is 115 to 280 nm.

[0039] In some embodiments, the first dichroic film and the second dichroic film are in contact.

[0040] In some embodiments, the second dichroic film and the third dichroic film are in contact.

[0041] The present application further provides a substrate processing apparatus, which includes:

[0042] A processing chamber that defines a space for accommodating a substrate carrier; and

[0043] A light-emitting unit as described herein, which is located above the substrate carrier.

[0044] In some embodiments, the substrate processing apparatus includes a motor coupled to the light emitting unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] When read in conjunction with the accompanying drawings, it is easy to understand various aspects of the present application from the following detailed description. It should be noted that the various features may not be drawn to scale. In fact, the size of the various features may be arbitrarily increased or reduced for the sake of clarity of discussion.

[0046] FIG. 1 illustrates a cross-sectional perspective view of a substrate processing apparatus according to some embodiments of the present application.

[0047] FIG2 depicts a cross-sectional view of the reflection path of UV radiation according to some comparative embodiments of the present application.

[0048] FIG3 a shows the UV radiation illumination simulation results according to some comparative embodiments of the present application.

[0049] Figure 3b shows the intensity distribution of the line segment a-a' in Figure 3a

[0050] FIG4 illustrates a reflector design according to some embodiments of the present application.

[0051] FIG5 a illustrates a reflector design according to some embodiments of the present application.

[0052] FIG5 b illustrates a reflector design according to some embodiments of the present application.

[0053] FIG6 a illustrates a reflector design according to some embodiments of the present application.

[0054] FIG6 b illustrates a reflector design according to some embodiments of the present application.

[0055] FIG. 7 depicts a dichroic film disposed on a reflector body.

[0056] FIG8 illustrates a cross-sectional view of the reflection path of UV radiation according to some embodiments of the present application.

[0057] FIG9 a shows the UV radiation illumination simulation results according to some embodiments of the present application.

[0058] FIG9 b shows the intensity distribution of the line segment bb′ in FIG9 a . DETAILED DESCRIPTION

[0059] For clarity and conciseness of the illustrations, the same reference numerals in different figures indicate the same components unless otherwise specified. In addition, descriptions and details of well-known steps and components may be omitted for simplicity of description. The use of the words "substantially" or "essentially" means that the values ​​of the components have parameters that are expected to be close to the stated values ​​or positions. However, as is well known in the art, there are always minor differences that prevent the values ​​or positions from being exactly the stated values ​​or positions. It is recognized in the art that deviations of up to at least ten percent (10%) (and for some components including semiconductor doping concentrations, even up to twenty percent (20%)) are reasonable deviations from the ideal goal of being exactly as described. The terms "first," "second," "third," etc. in the claims and / or detailed description (as used in part of a component name) are used to distinguish similar components and do not necessarily describe a temporal, spatial, hierarchical, or any other order. It should be understood that the terms so used are interchangeable where appropriate and that the embodiments described herein may operate in other orders than those described or illustrated herein. Reference to "some embodiments" means that a particular feature, structure, or characteristic described in conjunction with that embodiment is included in at least one embodiment of the present application. Thus, the phrase "in some embodiments" appearing in various places throughout this specification is not necessarily referring to the same embodiment, but in some cases may refer to the same embodiment. Furthermore, as will be apparent to one of ordinary skill in the art, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0060] The following disclosure provides many different embodiments or examples for implementing the different features of the subject matter provided. Specific examples of components and arrangements are described below. Of course, these are merely examples and are not intended to be limiting. In this application, descriptions in the following description of a first feature being formed on or above a second feature may include embodiments in which the first feature is formed in direct contact with the second feature, and may also include embodiments in which additional features may be formed between the first feature and the second feature so that the first feature and the second feature are not in direct contact. In addition, this application may repeat reference numerals and / or letters in various examples. This repetition is for the purpose of simplicity and clarity and does not, in itself, specify the relationship between the various embodiments and / or configurations discussed.

[0061] The following describes embodiments of the present application in detail. However, it should be understood that many applicable concepts provided by this application can be implemented in a variety of specific environments. The specific embodiments discussed are merely illustrative and do not limit the scope of this application.

[0062] In the manufacturing process of semiconductor devices, silicon oxide (SiO x ), silicon carbide (SiC) and carbon-doped silicon oxide (SiOC x) are widely used in silicon-containing thin film materials. These films are typically formed on semiconductor substrates via chemical vapor deposition (CVD) processes performed within a chamber. For example, a chemical reaction between a silicon source and an oxygen source can produce a solid silicon oxide deposit atop a semiconductor substrate within a CVD chamber. Similarly, silicon carbide and carbon-doped silicon oxide films can be formed via CVD reactions using organosilane sources containing at least one Si-C bond.

[0063] It's worth noting that water is often a byproduct of the CVD reaction of organosilane compounds. Consequently, water can be physically absorbed into the film as vapor or incorporated into the deposited film as Si-OH bonds. However, any such water incorporation is generally undesirable. Therefore, it's preferable to remove undesirable chemical bonds and compounds, such as water, from the deposited carbon-containing films. Furthermore, in certain CVD processes, it's necessary to remove thermally unstable organic components from the sacrificial material.

[0064] To address this issue, UV radiation is often used to assist in post-processing CVD silicon oxide and carbon-doped silicon oxide films. Using UV radiation to cure and harden CVD films can reduce the thermal overhead of individual wafers and accelerate the manufacturing process. Therefore, the present application provides a light emitting unit and a substrate processing apparatus incorporating the same, which can effectively cure thin films deposited on a substrate.

[0065] FIG1 illustrates a cross-sectional perspective view of a substrate processing apparatus 10 according to some embodiments of the present application. The substrate processing apparatus 10 includes a processing chamber 26 and a UV radiation emitting unit 12. The processing chamber 26 may include a substrate holder 20. The substrate holder 20 may be disposed within the processing chamber 26. The processing chamber 26 may define a space for accommodating the substrate holder 20. The UV radiation emitting unit 12 may be located above the substrate holder 20.

[0066] The substrate processing apparatus 10 may further include a gas source 19 , a gas conduit 16 connected to the gas source 19 , a vacuum pump 22 , and a vacuum valve 24 .

[0067] In FIG1 , the direction generally connecting the UV radiation emitting unit 12 and the substrate support 20 is defined as the z-direction. A direction generally perpendicular to the z-direction can be defined as the x-direction. A direction generally perpendicular to the z-direction can be defined as the y-direction. Therefore, the z-direction is the outer product of the x-direction and the y-direction. The support surface of the substrate support 20 can generally extend along the x-direction. The support surface of the substrate support 20 can generally extend along the y-direction.

[0068] The UV radiation emitting unit 12 may be positioned above the processing chamber 26. The UV radiation emitting unit 12 may be positioned above the substrate support 20. The UV radiation emitting unit 12 may be coupled to the processing chamber 26. The UV radiation emitting unit 12 may be connected to the processing chamber 26. The UV radiation emitting unit 12 may be vacuum-connected to the processing chamber 26. The UV radiation emitting unit 12 may be vacuum-isolated from the processing chamber 26.

[0069] The UV radiation emitting unit 12 may include a UV radiation emitting body 62 , a reflector 64 , and a reflector 66 .

[0070] The UV radiation emitting body 62 can include various UV lamps known in the art, such as, but not limited to, mercury vapor lamps and excimer lamps. The UV radiation emitting body 62 can extend generally in the y-direction and can have an elongated shape. The excimer lamp can include a Xe excimer lamp, which outputs 172nm deep ultraviolet (DUV) light, characterized by high energy and a relatively fast curing speed. The mercury vapor lamp can vary in lamp pressure from low to high and can emit UV radiation with a wavelength of approximately 100nm to 400nm, such as, but not limited to, 100, 120, 140, 150, 160, 180, 185, 200, 220, 240, 250, 254, 260, 280, 300, 320, 340, 350, 360, 365, 380, or 400nm. The UV radiation emitting body 62 can emit UV radiation continuously or in a pulsed manner. For example, the UV radiation emitting body 62 may pulse at a frequency of about 1 Hz to 1000 Hz (eg, but not limited to, 10 Hz, 100 Hz, 200 Hz, 500 Hz) and may be located between the reflector 64 and the reflector 66 in the z direction.

[0071] The reflector 64 may partially surround the UV radiation emitting body 62. The reflector 64 may define a space for accommodating the UV radiation emitting body 62. The reflector 64 may be further away from the reflector 66 than the UV radiation emitting body 62. The reflector 64 may direct UV radiation emitted by the UV radiation emitting body 62 toward the reflector 66. The reflector 64 may direct a portion of the UV radiation emitted by the UV radiation emitting body 62 toward the reflector 66. The reflector 64 may direct UV radiation emitted by the UV radiation emitting body 62 toward the substrate support 20. The reflector 64 may extend generally along the x-direction. The reflector 64 may extend generally along the y-direction. The reflector 64 may extend generally along the z-direction. In the z-direction, the reflector 64 may be further away from the reflector 66 relative to the UV radiation emitting body 62.

[0072] The reflector 66 is designed to increase the intensity of energy distributed on the substrate support 20. In the z-direction, the reflector 66 can be spaced away from the reflector 64 relative to the UV radiation emitting body 62. The reflector 66 can be located between the UV radiation emitting body 62 and the substrate support 20. The reflector 66 can direct the UV radiation emitted by the reflector 64 toward the substrate support 20. The reflector 66 can redirect the UV radiation that would otherwise not reach the substrate support 20 toward the substrate support 20.

[0073] In the z-direction, a spacing greater than zero can be defined between the reflector 66 and the UV radiation emitting unit 12 (not shown). The diameter of the lower edge of the reflector 66 can be smaller than the diameter of the substrate holder 20, so that no optical gap exists between the reflector 66 and the outer diameter of the substrate when viewed from the opposite side of the UV radiation emitting body 62. As used herein, "spacing" refers to the shortest distance between elements along a particular direction, unless otherwise specified.

[0074] Reflector 66 includes a portion adjacent reflector 64 and a portion adjacent substrate support 20, wherein each portion includes opposing longitudinal surfaces that intersect at an apex across the length of the longitudinal surfaces and opposing transverse surfaces that extend between ends of the longitudinal surfaces.

[0075] With this design, the reflector 66 can have a channeling effect to reflect UV radiation that falls outside the flood pattern of the reflector 64, causing the radiation to bombard the substrate support 20, thereby increasing the energy intensity distributed on the substrate support 20. In addition, the reflector 66 can match the flood pattern of the UV radiation emitting body 62 to the circular shape corresponding to the generally circular substrate on which the exposure is performed.

[0076] Those skilled in the art may consider using various simulation programs and other techniques to obtain a reflector 66 specifically suitable for the pairing of the UV radiation emitting body 62 and the reflector 64 .

[0077] A UV transparent window 14 may be provided between the processing chamber 26 and the UV radiation emitting unit 12. The UV transparent window 14 may be located between the UV radiation emitting body 12 and the substrate support 20. The UV transparent window 14 may be located between the UV radiation emitting body 62 and the substrate support 20. The UV transparent window 14 may be located between the reflector 64 and the substrate support 20. The UV transparent window 14 may be located between the reflector 66 and the substrate support 20. In the z-direction, a spacing greater than zero may be defined between the UV transparent window 14 and the reflector 66 (not shown). The UV transparent window 14 may extend along the x-direction. The UV transparent window 14 may extend along the y-direction. The UV transparent window 14 may be substantially parallel to the UV radiation emitting body 62.

[0078] The UV transparent window 14 can be made of glass or other materials that can transmit UV radiation, such as quartz. The function of the UV transparent window 14 is to isolate the processing chamber 26 from the surrounding environment while allowing UV radiation to pass through.

[0079] UV radiation emitted by UV radiation emitting body 62 can enter processing chamber 26 through UV transparent window 14. UV transparent window 14 can be made of synthetic quartz glass that does not contain OH groups. UV transparent window 14 can be thick enough to maintain a vacuum without breaking. Alternatively, UV transparent window 14 can be made of fused silica. UV transparent window 14 can maintain the vacuum in processing chamber 26. UV transparent window 14 can seal processing chamber 26. Thus, processing chamber 26 can provide a space that maintains a pressure of approximately 1 torr to approximately 650 torr.

[0080] The substrate holder 20 may be generally parallel to the UV radiation emitting body 62. The substrate holder 20 may face the UV radiation emitting body 62. A substrate 32 may be provided on the substrate holder 20. The substrate holder 20 may be configured with a heater 30 for heating the substrate holder 20. The substrate holder 20 may be configured with a heater 30 for heating the substrate 32.

[0081] In the z-direction, a spacing h3 (not shown) may be defined between the substrate support 20 and the reflector 66. h3 may be 1, 2, 3, 4, or 5 cm. h3 may include the thickness of the UV transparent window 14.

[0082] The substrate 32 is fed into the processing chamber 26 through the load lock processing chamber 40 and the gate valve 42 and is mounted on the substrate carrier 20. The substrate 32 may include a low-k material that has been deposited thereon. Such low-k materials can be formed by various methods known in the art. The substrate processing apparatus 10 can be used to cure various low-k materials known in the art, such as, but not limited to, low-k materials comprising silicon atoms, oxygen atoms, and carbon atoms. In certain embodiments, UV radiation can destroy the -CH3 bonds and -SiO bonds in the low-k material, rebuild the -SiO bonds, and construct an O-Si-O network, thereby improving the mechanical strength of the low-k material.

[0083] Many different techniques can be used to rotate the UV radiation emitting unit 12 at least 180 degrees relative to the substrate 32. For example, the UV radiation emitting unit 12 can remain in a fixed position, and a motor can be coupled to the substrate holder 20 to rotate the substrate 32 relative to the UV radiation emitting unit 12. Alternatively, the substrate 32 can remain in a fixed position, and a motor can be coupled to the UV radiation emitting unit to rotate the UV radiation emitting unit 12 relative to the substrate 32. It is also possible to rotate the UV radiation emitting unit 12 and the substrate 32 together in opposite directions.

[0084] Gas source 19 may contain process or purge gases. These process or purge gases enter processing chamber 26 through gas conduit 16 and are then exhausted from exhaust port 44 via vacuum pump 22 and vacuum valve 24. Substrate 32 may be processed in a specific process gas environment. This process gas may be used to prevent oxidation of the low-k material. The process gas may be an inert gas, such as, but not limited to, He or Ar. Alternatively, it may be N2 or O2.

[0085] Heater 30 may adjust the temperature of substrate holder 20 to about 0°C to about 650°C, such as but not limited to 10°C, 50°C, 100°C, 200°C, 300°C, 400°C, 500°C, 600°C or 650°C, preferably between 300°C and 450°C.

[0086] In the z-direction, a spacing h4 (not shown) may be defined between the substrate support 20 and the UV radiation emitting body 62. h4 may be approximately 1 cm to 100 cm.

[0087] The UV radiation irradiance on the substrate support 20 is about 1 mW / cm 2 Up to 1000mW / cm 2 , for example but not limited to: 10mW / cm 2 , 50mW / cm 2 , 100mW / cm 2 , 200mW / cm 2 , 500mW / cm 2 , or 800mW / cm 2 The exposure time is about 1 second to 60 minutes, for example, but not limited to, 5 seconds, 10 seconds, 20 seconds, 50 seconds, 100 seconds, 200 seconds, 500 seconds, and 1000 seconds. It should be understood that the exposure time can be selected based on the thickness of the material to be irradiated. For example, for a 500 nm thick low-k material layer, the exposure time can be about 30 minutes.

[0088] After UV irradiation, the gas generated in the processing chamber 26 can be exhausted from the exhaust port 44 via the vacuum pump 22 and the vacuum valve 24. Thus, the substrate processing apparatus 10 can perform the aforementioned series of process steps according to an automatic program in the controller 45. In some embodiments, these process steps include introducing gas into the processing chamber, irradiating the low-k material on the substrate with UV radiation, stopping the irradiation, and stopping the flow of gas into the processing chamber.

[0089] FIG2 depicts an xz cross-sectional view of several reflection paths of UV radiation according to some comparative embodiments, which is a re-drawn diagram by simplifying certain elements of FIG1. ​​As shown in FIG2, reflectors 64 and 66 generally allow the UV radiation generated by the UV radiation emitting body 62 to be directed toward and impinge on the substrate support 20. The UV transparent window 14 may be located between the UV radiation emitting body 62 and the substrate support 20.

[0090] FIG2 also illustrates the paths of radiation from the UV radiation emitting unit 12 that strikes the substrate support 20: path 65 that reaches the substrate support 20 after being reflected by the reflector 64, and paths 67 and 69 that reach the substrate support 20 after being reflected by the reflectors 64 and 66, respectively. It should be understood that the paths 65, 67, and 69 illustrated in FIG2 are merely exemplary paths, and that many other reflection paths, including some relatively complex paths, can be generated by the reflectors 64 and 66, i.e., the radiation may be reflected at multiple points on the reflectors 64 and 66.

[0091] In the comparative embodiment shown in FIG2 , the reflectivity of each point on reflector 64 is substantially the same, and the reflectivity of each point on reflector 66 is substantially the same. Since path 65 is a path that undergoes single-point reflection, while paths 67 and 69 are paths that undergo multiple-point reflection, and since the reflectivities of both reflectors 64 and 66 are less than 1, the UV radiation reflected by both reflectors 64 and 66 (e.g., paths 67 and 69) has a lower intensity than the UV radiation reflected by a single reflector 64 (e.g., path 65). Consequently, UV radiation with uneven illumination is received by substrate support 20.

[0092] Figure 3a shows simulation results of UV radiation illumination for some comparative embodiments of the present application. In the substrate processing apparatus 10 shown in Figure 2 , when the reflectivity at each point on reflectors 64 and 66 is substantially the same (e.g., 90%), the substrate support 20 may exhibit UV radiation illumination (flood pattern) as shown in Figure 3a in an xy cross-section. Figure 3b shows the intensity distribution along the line segment a-a' in Figure 3a , where the horizontal axis represents position in the x-direction and the vertical axis represents illumination. Figures 3a and 3b indicate that the center of the substrate support 20 has higher illumination, while the edges have lower illumination. This is because the paths passing through the two reflectors (e.g., paths 67 and 69) undergo multiple refractions and reflections, causing the UV radiation to become weaker after passing through these paths. This is why the UV radiation received by the substrate support 20 exhibits uneven illumination (i.e., higher illumination at the center of the substrate support 20 and lower illumination at the edges).

[0093] When low-k materials are cured unevenly, it may have a negative impact on device performance. First, uneven curing may cause stress inside the material, thereby affecting its mechanical stability. Secondly, if low-k materials are cured unevenly, it may cause electrical performance parameters (such as resistance, capacitance, etc.) to be unevenly distributed in the material, thereby affecting the electrical performance of the device. In addition, uneven curing may also affect the reliability and life of the material. Therefore, in the semiconductor process, it is very important to achieve uniformity of UV radiation illumination (i.e., uniformity of floodlight intensity) during the material curing process.

[0094] Figure 4 shows a design of a reflector 64a according to some embodiments of the present application. Reflector 64a can replace reflector 64 in Figures 1 and 2. For ease of description, the z direction in Figure 4 is opposite to the z direction in Figures 1 and 2.

[0095] The reflector 64 a includes a reflector body 72 , a film 74 , a film 76 , and a film 78 .

[0096] Reflector body 72 may partially surround UV radiation emitting body 62. Reflector body 72 may define opening 71 for reflector 64a. Reflector 64a may direct UV radiation toward reflector 66 through opening 71. Reflector 64a may direct UV radiation toward substrate support 20 through opening. Examples of materials for the reflector body include, but are not limited to, borosilicate glass.

[0097] The film 74 may be located on a surface of the reflector body 72 adjacent to the UV radiation emitting body 62. The film 74 may contact the reflector body 72. The film 74 may partially surround the UV radiation emitting body 62. A spacing greater than zero may be defined between the film 74 and the UV radiation emitting body 62. The film 74 has a reflectivity F74 for light having a wavelength of 100 nm to 400 nm, generally along the thickness direction of the film 74. F74 may be greater than or equal to 85.5%, and F74 may be less than 100%. For example, but not limited to, F74 may be 85.5, 86, 86.5, 87, 87.5, 88, 88.5, 89, 89.5, 90, 90.5, 91, 91.5, 92, 92.5, 93, 93.5, 94, 94.5, 95, 95.5, 96, 96.5, 97, 97.5, 97.6, 97.8, 98, 98.2, 98.4, 98.5, 98.6, 98.8, 99, 99.1, 99.2, 99.3, 99.4, 99.5, 99.6, 99.7, 99.8, 99.9, or <100%. A suitable F74 range may be any combination of the above values.

[0098] The film 76 may be located on a surface of the reflector body 72 adjacent to the UV radiation emitting body 62. The film 76 may contact the reflector body 72. The film 76 may partially surround the UV radiation emitting body 62. A spacing greater than zero may be defined between the film 76 and the UV radiation emitting body 62. The film 76 has a reflectivity F76 for light having a wavelength of 100 nm to 400 nm, generally along the thickness direction of the film 76. F76 may be greater than or equal to 85%, F76 may be less than or equal to 99.9%, for example, but not limited to, 85, 85.5, 86, 86.5, 87, 87.5, 88, 88.5, 89, 89.5, 90, 90.5, 91, 91.5, 92, 92.5, 93, 93.5, 94, 94.5, 95, 95.5, 96, 96.5, 97, 97.5, 97.6, 97.8, 98, 98.2, 98.4, 98.5, 98.6, 98.8, 99, 99.1, 99.2, 99.3, 99.4, 99.5, 99.6, 99.7, 99.8, or 99.9%, and a suitable F76 range may be any combination of the above values.

[0099] The film 78 may be located on a surface of the reflector body 72 adjacent to the UV radiation emitting body 62. The film 78 may contact the reflector body 72. The film 78 may partially surround the UV radiation emitting body 62. A spacing greater than zero may be defined between the film 78 and the UV radiation emitting body 62. The film 78 has a reflectivity F78 for light having a wavelength of 100 nm to 400 nm, generally along the thickness direction of the film 78. F78 may be greater than or equal to 85.5%, and F78 may be less than 100%. For example, but not limited to, F78 may be 85.5, 86, 86.5, 87, 87.5, 88, 88.5, 89, 89.5, 90, 90.5, 91, 91.5, 92, 92.5, 93, 93.5, 94, 94.5, 95, 95.5, 96, 96.5, 97, 97.5, 97.6, 97.8, 98, 98.2, 98.4, 98.5, 98.6, 98.8, 99, 99.1, 99.2, 99.3, 99.4, 99.5, 99.6, 99.7, 99.8, 99.9, or <100%. A suitable F78 range may be any combination of the above values.

[0100] F76 is less than F74. The ratio of F74 to F76 (F74 / F76) may be greater than 1, and F74 / F76 may be less than or equal to 1.12. Examples of F74 / F76 values, but not limited to, include 1.001, 1.01, 1.02, 1.03, 1.04, 1.05, 1.06, 1.07, 1.08, 1.09, 1.1, 1.11, or 1.12. Suitable F74 / F76 ranges may include any combination of the above values.

[0101] F76 is less than F78. The ratio of F78 to F76 (F78 / F76) may be greater than 1, and F78 / F76 may be less than or equal to 1.12. Examples of F78 / F76 include, but are not limited to, 1.001, 1.01, 1.02, 1.03, 1.04, 1.05, 1.06, 1.07, 1.08, 1.09, 1.1, 1.11, or 1.12. Suitable F78 / F76 ranges may be any combination of the above values.

[0102] F74 may be equal to F78. F74 may not be equal to F78. F74 may be greater than F78. F74 may be less than F78.

[0103] In the x-direction, film 76 may be located between film 74 and film 78. In the z-direction, film 76 may be located between film 74 and reflector body 72. In the z-direction, film 76 may be located between film 78 and reflector body 72. Film 74 may not be in contact with film 76. Film 74 may not be in contact with film 78. Film 76 may not be in contact with film 78. In the x-direction, film 74 and film 78 together may surround film 76.

[0104] In FIG4 , the thickness direction of film 76 may be substantially parallel to the z-direction. The projection of film 74 in the x-direction may not overlap with the projection of film 76 in the x-direction. The projection of film 74 in the x-direction may not overlap with the projection of film 78 in the x-direction. The projection of film 74 in the z-direction may not overlap with the projection of film 76 in the z-direction. The projection of film 74 in the z-direction may overlap with the projection of film 78 in the z-direction. The projection of film 76 in the x-direction may not overlap with the projection of film 78 in the x-direction. The projection of film 76 in the z-direction may not overlap with the projection of film 78 in the z-direction.

[0105] In the x-direction, a spacing d1 may be defined between films 74 and 76. In the x-direction, a spacing d2 may be defined between films 78 and 76. In the x-direction, a spacing d3 may be defined between films 78 and 74. d1 may be equal to d2. d1 may not be equal to d2. d1 may not be equal to d3. d2 may not be equal to d3.

[0106] Membrane 74 may include a gap 75 between membrane 76. Membrane 78 may include a gap 79 between membrane 76. Gap 75 may extend generally along the y-direction. Gap 79 may extend generally along the y-direction.

[0107] In the x-direction, gaps 75 and 79 may be arranged relative to membrane 76. In the x-direction, membrane 76 may be located between gaps 75 and 79. In the x-direction, the width of gap 75 may be defined as d1. In the x-direction, the width of gap 79 may be defined as d2.

[0108] In the z-direction, a spacing h1 may be defined between the UV radiation emitting body 62 and the film 76. In the z-direction, h1 may be the maximum distance between the UV radiation emitting body 62 and the film 76. Through an iterative process of simulating the light generated by the UV radiation emitting body 62, the inventors achieved an optimized design for the reflector 64a. In this design, the ratio of d3 to h1 (d3 / h1), F76, F74, and F78 are configured according to the design rules in Table 1. This optimized design improves the illumination uniformity of the flood pattern, thereby enhancing the performance of the substrate processing apparatus.

[0109] Table 1

[0110] In some embodiments, the ratio of d3 to h1 (d3 / h1), the ratio of F74 to F76 (F74 / F76), and the ratio of F78 to F76 (F78 / F76) can be configured according to the design rules of Table 2. This optimized design can improve the illumination uniformity of the flood pattern, thereby improving the performance of the substrate processing apparatus.

[0111] Table 2

[0112] Therefore, the ratio of d3 to h1 (d3 / h1) may be greater than or equal to 2.5, and d3 / h1 may be less than or equal to 3.5. d3 / h1 may be, for example but not limited to, 2.5, 2.55, 2.6, 2.65, 2.7, 2.75, 2.8, 2.85, 2.9, 2.95, 3, 3.05, 3.1, 3.15, 3.2, 3.25, 3, 3.35, 3.4, 3.45, or 3.5. The appropriate range of d3 / h1 may be any combination of the above values.

[0113] Figure 5a shows a design of a reflector 64b according to some embodiments of the present application. Reflector 64b can replace reflector 64 in Figures 1 and 2. For ease of description, the z direction in Figure 5 is opposite to the z direction in Figures 1 and 2.

[0114] The reflector 64b is substantially the same as the reflector 64a shown in FIG. 4 , with the following differences:

[0115] Film 74 may contact film 76. Film 78 may contact film 76. Film 74 may cover gap 75. Film 78 may cover gap 79. Film 74 may cover film 76. Film 78 may cover film 76. In the z-direction, film 74 and reflector body 72 may be arranged relative to gap 75. In the z-direction, film 78 and reflector body 72 may be arranged relative to gap 79.

[0116] In FIG5 a , the thickness direction of film 76 may be substantially parallel to the z-direction. The projection of film 74 in the x-direction may overlap with the projection of film 76 in the x-direction. The projection of film 74 in the x-direction may overlap with the projection of film 78 in the x-direction. The projection of film 74 in the z-direction may overlap with the projection of film 76 in the z-direction. The projection of film 74 in the z-direction may overlap with the projection of film 78 in the z-direction. The projection of film 76 in the x-direction may overlap with the projection of film 78 in the x-direction. The projection of film 76 in the z-direction may overlap with the projection of film 78 in the z-direction.

[0117] Figure 5b shows a design of a reflector 64c according to some embodiments of the present application. Reflector 64c can replace reflector 64 in Figures 1 and 2. For ease of description, the z direction in Figure 5b is opposite to the z direction in Figures 1 and 2.

[0118] The reflector 64c is substantially the same as the reflector 64b shown in FIG. 5a , with the following differences:

[0119] The gap 75 may not be included between the membrane 74 and the membrane 76 , and therefore, d1 is 0. The gap 79 may not be included between the membrane 78 and the membrane 76 , and therefore, d2 is 0.

[0120] Figure 6a shows a design of a reflector 64d according to some embodiments of the present application. Reflector 64d can replace reflector 64 in Figures 1 and 2. For ease of description, the z direction in Figure 6 is opposite to the z direction in Figures 1 and 2.

[0121] The reflector 64d is substantially the same as the reflector 64a shown in FIG. 4 , with the following differences:

[0122] Film 74 may contact film 76. Film 78 may contact film 76. Film 76 may cover gap 75. Film 76 may cover gap 79. Film 76 may cover film 74. Film 76 may cover film 78. In the z-direction, film 76 and reflector body 72 may be arranged relative to gap 75. In the z-direction, film 76 and reflector body 72 may be arranged relative to gap 79.

[0123] In FIG6 a , the thickness direction of film 76 may be substantially parallel to the z-direction. The projection of film 74 in the x-direction may overlap with the projection of film 76 in the x-direction. The projection of film 74 in the x-direction may overlap with the projection of film 78 in the x-direction. The projection of film 74 in the z-direction may overlap with the projection of film 76 in the z-direction. The projection of film 74 in the z-direction may overlap with the projection of film 78 in the z-direction. The projection of film 76 in the x-direction may overlap with the projection of film 78 in the x-direction. The projection of film 76 in the z-direction may overlap with the projection of film 78 in the z-direction.

[0124] Figure 6b shows a design of a reflector 64e according to some embodiments of the present application. Reflector 64e can replace reflector 64 in Figures 1 and 2. For ease of description, the z direction in Figure 6b is opposite to the z direction in Figures 1 and 2.

[0125] Reflector 64e is substantially the same as reflector 64d shown in FIG6a , with the following differences:

[0126] The gap 75 may not be included between the membrane 74 and the membrane 76 , and therefore, d1 is 0. The gap 79 may not be included between the membrane 78 and the membrane 76 , and therefore, d2 is 0.

[0127] In some embodiments, to obtain a desired reflectivity within the wavelength range of 100 nm to 400 nm, a dichroic film may be disposed on the reflector body 72. The dichroic film used in this application can selectively pass light within a desired wavelength range while reflecting light within other wavelength ranges.

[0128] FIG7 depicts a dichroic film 80 that may be disposed on reflector body 72. Dichroic film 80 may be used as film 74. Dichroic film 80 may be used as film 76. Dichroic film 80 may be used as film 78. Dichroic film 80 may include one or more layers 82 and one or more layers 84. Layers 82 and 84 may be alternately disposed on reflector body 72.

[0129] Layers 82 and 84 may be periodically arranged on reflector body 72. Layer 82 may be in contact with layer 84. Layer 82 may not be in contact with layer 84. Layer 82 may be in contact with reflector body 72. Layer 82 may not be in contact with reflector body 72. Layer 84 may be in contact with reflector body 72. Layer 84 may not be in contact with reflector body 72.

[0130] Layer 82 may have a refractive index R82. Layer 84 may have a refractive index R84. For light with a wavelength of 100 nm to 400 nm, R82 may be greater than or equal to 1.6, or less than or equal to 1.9. Examples of R82 include, but are not limited to, 1.6, 1.63, 1.65, 1.68, 1.7, 1.73, 1.75, 1.78, 1.8, 1.83, 1.85, 1.88, or 1.9. Suitable R82 ranges may include any combination of the above values. R84 may be greater than or equal to 1.2, or less than or equal to 1.5. Examples of R84 include, but are not limited to, 1.2, 1.23, 1.25, 1.28, 1.3, 1.33, 1.35, 1.38, 1.4, 1.43, 1.45, 1.48, or 1.5. Suitable R84 ranges may include any combination of the above values. R82 may be greater than R84. Therefore, layer 82 may be a high refractive index layer. Layer 84 may be a low refractive index layer.

[0131] The material of the high refractive index layer 82 includes, but is not limited to, Al 2 O 3 .

[0132] The material of the low refractive index layer 84 is, for example but not limited to: M g F2.

[0133] Layer 82 may have a thickness t82, which may be greater than or equal to 4 μm and less than or equal to 8 μm. Examples of t82 include, but are not limited to, 4, 4.5, 5, 5.5, 6, 6.5, 7, 7.5, or 8 μm. Suitable ranges for t82 may include any combination of the above values. Layer 84 may have a thickness t84, which may be greater than or equal to 4 μm and less than or equal to 8 μm. Examples of t84 include, but are not limited to, 4, 4.5, 5, 5.5, 6, 6.5, 7, 7.5, or 8 μm. Suitable ranges for t84 may include any combination of the above values.

[0134] Dichroic film 80 may serve as film 74. The inventors have achieved an optimized design for reflectors 64a-64e by employing an iterative process of simulating the light generated by UV radiation emitting body 62, wherein when serving as film 74, layers 82 and 84 may be configured on reflector body 72 according to the design rules shown in Table 3:

[0135] Table 3

[0136] Dichroic film 80 may serve as film 76. When used as film 76, layers 82 and 84 may be arranged on reflector body 72 according to the design rules shown in Table 4:

[0137] Table 4

[0138] Dichroic film 80 may be used as film 78. When used as film 78, layers 82 and 84 may be configured on reflector body 72 according to the design rules shown in Table 5:

[0139] Table 5

[0140] Therefore, the thickness of film 74 may be equal to the thickness of film 76. The thickness of film 74 may be equal to the thickness of film 78. The thickness of film 76 may be equal to the thickness of film 78. The thickness of film 74 may be greater than the thickness of film 76. The thickness of film 74 may be greater than the thickness of film 78. The thickness of film 76 may be greater than the thickness of film 74. The thickness of film 76 may be greater than the thickness of film 78. The thickness of film 78 may be greater than the thickness of film 74. The thickness of film 78 may be greater than the thickness of film 76.

[0141] FIG8 illustrates an xz cross-sectional view showing several reflection paths of UV radiation of a substrate processing apparatus 10 a according to some embodiments. The substrate processing apparatus 10 a is substantially the same as the substrate processing apparatus 10 shown in FIG1 and FIG2 , with the following differences:

[0142] The reflector 64 shown in FIG. 2 is replaced with a reflector 64 a shown in FIG. 4 .

[0143] The configurations of films 74, 76, and 78 enable UV radiation to be reflected along specific paths. Specifically, film 74 is configured so that path 69 is reflected through film 74, film 76 is configured so that path 65 is reflected through film 76, and film 78 is configured so that path 67 is reflected through film 78. Those skilled in the art will appreciate the use of various simulation programs and other techniques to determine the positions of films 74, 76, and 78 in conjunction with UV radiation emitting body 62 and substrate support 20.

[0144] Figure 9a shows the UV radiation illuminance simulation results of some embodiments of the present application. In the substrate processing device 10a shown in Figure 8, the substrate carrier 20 may have a UV radiation illuminance (flood pattern) as shown in Figure 9a on the xy cross section, where F74 may be 90%, F76 may be 85%, and F78 may be 90%. Figure 9b shows the intensity distribution of the b-b' line segment in Figure 9a, where the horizontal axis in Figure 9b represents the position in the x direction and the vertical axis represents the illuminance. Figures 9a and 9b show that, according to some embodiments of the present invention, the center and edge of the substrate carrier 20 have substantially the same illuminance. This means that the substrate carrier 20 exhibits a substantially uniform flood pattern. This design helps to improve the uniformity of the UV curing process, thereby improving the performance and reliability of semiconductor devices.

[0145] In some embodiments, reflector 64 in FIG. 2 can be replaced with reflector 64b in FIG. 5a , or reflector 64 in FIG. 2 can be replaced with reflector 64c in FIG. 5b , or reflector 64 in FIG. 2 can be replaced with reflector 64d in FIG. 6a , or reflector 64 in FIG. 2 can be replaced with reflector 64e in FIG. 6b . In these cases, the configuration of films 74, 76, and 78 allows UV radiation to be reflected along specific paths. Specifically, film 74 is configured so that path 69 is reflected through film 74, film 76 is configured so that path 65 is reflected through film 76, and film 78 is configured so that path 67 is reflected through film 78. This design can achieve the effect shown in FIG. 9a and 9b , where the center and edges of substrate support 20 have substantially equal illumination. This means that substrate support 20 exhibits a substantially uniform flood pattern. This design helps improve the uniformity of the UV curing process, thereby enhancing the performance and reliability of semiconductor devices. This is a very important design advantage because in semiconductor manufacturing, it is very important to achieve uniformity in the material curing process.

[0146] As used herein, spatially relative terms such as "below," "beneath," "lower," "above," "upper," "lower," "left," "right," etc. may be used herein for ease of description to describe the relationship of one component or feature to another component or feature as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0147] It should be noted that the values ​​of width, distance, etc. described in this application are only exemplary and the application is not limited thereto. In some embodiments, these values ​​may be adjusted according to the actual application of the invention without departing from the spirit of the invention.

[0148] As used herein, the terms "about," "approximately," "substantially," "roughly," and "approximately" are used to describe and account for small variations. When used in conjunction with an event or circumstance, the terms can refer to situations in which the event or circumstance clearly occurs as well as situations in which the event or circumstance is very close to occurring. As used herein with respect to a given value or range, the terms "about" or "similar" generally mean within ±10%, ±5%, ±1%, or ±0.5% of the given value or range. Ranges can be expressed herein as from one endpoint to another or between two endpoints. Unless otherwise specified, all ranges disclosed herein include endpoints. The term "substantially coplanar" can refer to two surfaces that are located along the same plane within a few microns (μm), for example, within 10 μm, within 5 μm, within 1 μm, or within 0.5 μm along the same plane. When referring to "substantially" the same value or feature, the term can refer to a value that is within ±10%, ±5%, ±1%, or ±0.5% of the average of the stated values.

[0149] The foregoing summarizes several embodiments and features of the present application in detail. The embodiments described in this application can be easily used as a basis for designing or modifying other processes and structures for performing the same or similar purposes and / or obtaining the same or similar advantages of the embodiments introduced herein. These equivalent constructions do not depart from the spirit and scope of the present application and various variations, substitutions, and modifications may be made without departing from the spirit and scope of the present application.

[0150] Although the subject matter of this specification has been described through specific preferred embodiments and exemplary embodiments, the foregoing drawings and description of this specification merely depict typical non-limiting examples of the embodiments of the subject matter and are therefore not to be considered as limiting its scope, as many alternatives and modifications will be apparent to those skilled in the art.

[0151] As reflected in the claims below, aspects of the present application may have fewer than all of the features of a single embodiment disclosed above. Therefore, the claims expressed below are hereby expressly incorporated into the detailed description, with each claim standing on its own as a separate embodiment of the present application. Furthermore, while some embodiments described herein include some features included in other embodiments without including other features therein, those skilled in the art will understand that combinations of features from different embodiments are intended to fall within the scope of this application and are intended to form distinct embodiments.

Claims

1. A light emitting unit, comprising: A light emitting body that extends generally along a first direction, the light emitting body emitting UV radiation having a wavelength of about 100 nm to 400 nm; A first reflector that partially surrounds the light emitting body, the first reflector comprising: A reflector body that defines an opening through which the UV radiation passes, A first film that is located on a surface of the reflector body adjacent to the light emitting body, and that has a reflectance F74 for the UV radiation in a thickness direction of the first film, A second film that is located on a surface of the reflector body adjacent to the light emitting body, and that has a reflectance F76 for the UV radiation in a thickness direction of the second film, where F76 < F74, and A third film that is located on a surface of the reflector body adjacent to the light emitting body, and that has a reflectance F78 for the UV radiation in a thickness direction of the third film, where F78 > F76, Wherein, generally along a direction perpendicular to the first direction, the second film is located between the first film and the third film; and A second reflector that is farther from the first reflector than the light emitting body, wherein the first reflector directs the UV radiation toward the second reflector.

2. The light emitting unit according to claim 1, wherein a first gap is included between the first film and the second film.

3. The light emitting unit according to claim 2, wherein the first gap extends generally along the first direction.

4. The light emitting unit according to claim 2, wherein generally along a direction perpendicular to the first direction, the first gap is located between the first film and the reflector body.

5. The light emitting unit according to claim 2, wherein generally along a direction perpendicular to the first direction, the first gap is located between the second film and the reflector body.

6. The light emitting unit according to claim 2, wherein a second gap is included between the second film and the third film.

7. The light emitting unit according to claim 6, wherein the second gap extends generally along the first direction.

8. The light emitting unit according to claim 1, wherein 1 < F74 / F76 ≤ 1.

12.

9. The light emitting unit according to claim 8, wherein generally along a direction perpendicular to the first direction, a spacing h1 is defined between the light emitting body and the second film, and generally along a direction parallel to the first direction, a spacing d3 is defined between the first film and the third film, where 2.5 ≤ d3 / h1 ≤ 3.

5.

10. A light emitting unit, comprising: A light emitting body that extends generally along a first direction, the light emitting body emitting UV radiation having a wavelength of about 100 nm to 400 nm; A first reflector that partially surrounds the light emitting body, the first reflector comprising: A reflector body that defines an opening through which the UV radiation passes, A first dichroic film that is located on a surface of the reflector body adjacent to the light emitting body, the first dichroic film having a thickness t1, A second dichroic film, which is located on a surface of the reflector body adjacent to the light-emitting body, the second dichroic film having a thickness t2, and t2 < t1, and A third dichroic film, which is located on a surface of the reflector body adjacent to the light-emitting body, the third dichroic film having a thickness t3, and t3 > t2, wherein, substantially along a direction perpendicular to the first direction, the second film is located between the first film and the third film; and A second reflector, which is farther from the first reflector than the light-emitting body, wherein the first reflector directs the UV radiation towards the second reflector.

11. The light-emitting unit according to claim 10, wherein the first dichroic film comprises 35 to 45 groups of alternately arranged high-refractive-index layers and low-refractive-index layers.

12. The light-emitting unit according to claim 11, wherein the thickness of the high-refractive-index layers of the first dichroic film is 110 to 230 nm.

13. The light-emitting unit according to claim 11, wherein the thickness of the low-refractive-index layers of the first dichroic film is 110 to 230 nm.

14. The light-emitting unit according to claim 11, wherein the second dichroic film comprises 25 to 35 groups of alternately arranged high-refractive-index layers and high-refractive-index layers.

15. The light-emitting unit according to claim 14, wherein the thickness of the high-refractive-index layers of the second dichroic film is 115 to 280 nm.

16. The light-emitting unit according to claim 14, wherein the thickness of the low-refractive-index layers of the second dichroic film is 115 to 280 nm.

17. The light-emitting unit according to claim 10, wherein the first dichroic film and the second dichroic film are in contact.

18. The light-emitting unit according to claim 17, wherein the second dichroic film and the third dichroic film are in contact.

19. A substrate processing apparatus, comprising: A processing chamber, which defines a space for accommodating a substrate carrier; and The light-emitting unit according to any one of claims 1 to 15, which is located above the substrate carrier.

20. The substrate processing apparatus according to claim 19, which comprises a motor coupled to the light-emitting unit.

Images