Preparation method for multi-type multi-layer composite film system, electrically conductive thin film and semiconductor device

Abstract

Disclosed in the present invention are a preparation method for a multi-type multi-layer composite film system, an electrically conductive thin film and a semiconductor device. The preparation method comprises the following steps: preparing a first metal film layer on a substrate; subjecting the first metal film layer to a surface roughening treatment; and preparing a second metal film layer on the first metal film layer. In the preparation method of the present invention, by subjecting the first metal film layer to a surface roughening treatment, the adhesive force between the film layers can be enhanced, the adhesive force between the film layers is improved, the equipment investment cost is reduced, and a multi-type multi-layer film system can be prepared by means of a single piece of equipment, thereby effectively reducing or preventing substrate reworking, and greatly reducing production costs.

Description

Methods for preparing various types of multilayer composite films, conductive films, and semiconductor devices

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on December 8, 2023, with application number 2023116999170 and invention name “Method for preparing multi-type multilayer composite film systems, conductive films and semiconductor devices”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of thin film technology, and in particular to a method for preparing a multi-type multi-layer composite film system, a conductive film, and a semiconductor device. Background Art

[0003] Thin film technology is widely used in industries such as solar energy, microwaves, circuits, automobiles, and electronics, and the adhesion between various film layers has always been a common problem that has plagued the development of various industries. At present, physical vapor deposition technology (PVD) is being used more and more widely. In traditional technologies, many composite film layers cannot be continuously sputtered when producing multi-purpose composite film layers under the conditions of a single device and lack of target materials. The reasonable method adopted in traditional technologies for producing multi-purpose composite film layers is to rework the substrate or introduce multiple sputtering equipment. Introducing multiple sputtering equipment will greatly increase equipment costs and production costs. Reworking the substrate increases the workload and there is also a risk of scrapping the reworked substrate.

[0004] Summary of the Invention

[0005] Based on this, it is necessary to provide a method for preparing a variety of multi-layer composite film systems. The method of the present invention can enhance the adhesion between film layers by performing a surface roughening treatment on the first metal film layer, so that some film layers that cannot be bonded under vacuum can be effectively connected by mechanical bonding, reducing equipment investment costs, enabling the preparation of multiple multi-layer film systems with a single device, effectively reducing or preventing substrate rework, and significantly reducing production costs.

[0006] An embodiment of the present application provides a method for preparing various types of multi-layer composite film systems.

[0007] A method for preparing a multi-layer composite film system comprises the following steps:

[0008] A first metal film layer is prepared on the substrate by a vacuum coating method;

[0009] performing a surface roughening treatment on the first metal film layer;

[0010] A second metal film layer is prepared on the first metal film layer after the surface roughening treatment by using a vacuum coating method.

[0011] In some embodiments, the substrate includes a ceramic substrate, a silicon wafer, an insulating substrate, or a semiconductor substrate.

[0012] In some embodiments, the ceramic substrate includes an aluminum oxide ceramic substrate or an aluminum nitride ceramic substrate, and the semiconductor substrate includes a solar cell.

[0013] In some embodiments, when a vacuum coating method is used to prepare a first metal film layer on a substrate, the following steps are specifically included: using a cleaning agent to clean the substrate to remove surface contaminants, the cleaning agent includes hydrofluoric acid, hydrochloric acid and pure water, wherein the volume ratio of hydrofluoric acid, hydrochloric acid and pure water is (2mL~5mL):(2mL~5mL):100mL.

[0014] In some embodiments, the method for preparing multiple types of multi-layer composite membrane systems further satisfies at least one of the following conditions:

[0015] (1) The first metal film layer is made of one or more of the metals Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti, and W;

[0016] (2) The preparation material of the first metal film layer includes metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti or W.

[0017] In some embodiments, the thickness of the first metal film layer is 100 nm to 300 nm.

[0018] In some embodiments, the surface roughening treatment of the first metal film layer specifically includes the following steps:

[0019] After breaking the vacuum, the first metal film layer is subjected to wet sandblasting, the sandblasting pressure is 0.1Mpa to 0.2Mpa, the sandblasting time is 5s to 20s, and the wet sandblasting is followed by drying;

[0020] The first metal film layer after the drying process is subjected to plasma etching, the etching pressure is 0.1 Pa to 1 Pa, the etching gas is argon, and the etching time is 20s to 50s.

[0021] In some embodiments, the method for preparing multiple types of multi-layer composite membrane systems further includes the following steps:

[0022] The second to Nth metal film layers are prepared on the first metal film layer after surface roughening by a vacuum coating method, wherein N is an integer ≥3.

[0023] In some embodiments, the method for preparing multiple types of multi-layer composite membrane systems further satisfies at least one of the following conditions:

[0024] (1) The thickness of the second metal film layer is 100 nm to 300 nm;

[0025] (2) The thickness of the Nth metal film layer is 100 nm to 300 nm.

[0026] In some embodiments, the method for preparing multiple types of multi-layer composite membrane systems further satisfies at least one of the following conditions:

[0027] (1) The preparation material of the second metal film layer and the preparation material of the Nth metal film layer independently include one or more alloys of metals selected from the group consisting of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti, and W;

[0028] (2) The preparation material of the second metal film layer and the preparation material of the N-th metal film layer independently include metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti or W.

[0029] In some embodiments, the vacuum coating process used to prepare the second to N metal film layers on the surface-roughened first metal film layer is the same as the vacuum coating process used to prepare the first metal film layer.

[0030] In some embodiments, the first metal film layer is a single film layer or an indefinite film layer.

[0031] An embodiment of the present application further provides a conductive film.

[0032] A conductive film is prepared by adopting the method for preparing multiple types of multi-layer composite film systems.

[0033] An embodiment of the present application also provides a semiconductor device.

[0034] A semiconductor device includes the conductive film.

[0035] The method for preparing various types of multi-layer composite film systems of the present invention can enhance the adhesion between film layers by performing surface roughening treatment on the first metal film layer. For example, the present application increases the surface roughness of the first metal film layer by sandblasting, and facilitates the deposition of other film layers again after removing the surface oxide layer, so that the film layers are mechanically bonded, thereby improving the adhesion between the film layers, so that some film layers that cannot be bonded under vacuum can be effectively connected by mechanical bonding, reducing equipment investment costs, and realizing the preparation of various types of multi-layer film systems by a single device, effectively reducing or preventing substrate rework, and significantly reducing production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] To more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present application. Those skilled in the art can also derive other drawings based on these drawings without inventive effort.

[0037] In order to more completely understand the present application and its beneficial effects, the following description will be given in conjunction with the accompanying drawings. In the following description, the same reference numerals represent the same parts.

[0038] FIG1 is a schematic diagram of a process flow of a method for preparing a multi-type multi-layer composite film system according to an embodiment of the present invention;

[0039] FIG2 is a schematic diagram of step (1) of the method for preparing a multi-type multi-layer composite film system according to Example 1 of the present invention;

[0040] FIG3 is a schematic diagram of step (2) of the method for preparing a multi-type multi-layer composite film system according to Example 1 of the present invention;

[0041] FIG4 is a schematic diagram of step (3) of the method for preparing a multi-type multi-layer composite film system according to Example 1 of the present invention;

[0042] FIG5 is a schematic diagram of step (4) of the method for preparing a multi-type multi-layer composite film system according to Example 1 of the present invention;

[0043] FIG6 is a schematic diagram of step (5) of the method for preparing a multi-type multi-layer composite film system according to Example 1 of the present invention.

[0044] DESCRIPTION OF NUMERALS 100 , substrate; 200 , first metal film layer; 300 , second metal film layer; 400 , Nth metal film layer. DETAILED DESCRIPTION

[0045] To make the above-mentioned objects, features, and advantages of the present invention more readily apparent, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings. The following description sets forth numerous specific details to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways than those described herein, and those skilled in the art may make similar modifications without departing from the scope of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0046] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0047] In the present invention, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection, electrical connection; direct connection, or indirect connection through an intermediate medium; internal communication between two components, or interaction between two components, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0048] In the present invention, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediary. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0049] In the description of the present invention, "several" means more than one, "plurality" means more than two, "greater than," "less than," and "exceed" are understood to exclude the number itself, while "above," "below," and "within" are understood to include the number itself. The use of "first" and "second" in the description is solely for the purpose of distinguishing technical features and should not be construed as indicating or implying relative importance, implicitly specifying the number of the indicated technical features, or implicitly specifying the order of the indicated technical features.

[0050] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this invention pertains. The terms used herein in the specification of the present invention are for the purpose of describing specific embodiments only and are not intended to limit the present invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0051] The present invention provides a method for preparing a variety of multi-layer composite film systems. This method addresses the conventional methods of producing multi-purpose composite films, which require either reworking the substrate 100 or introducing multiple sputtering devices. The introduction of multiple sputtering devices significantly increases equipment and production costs, while reworking the substrate 100 increases workload and carries the risk of scrapping the reworked substrate 100. The method for preparing a variety of multi-layer composite film systems is described below with reference to the accompanying drawings.

[0052] The method for preparing a variety of multi-layer composite membranes provided in the embodiments of the present application is exemplified in Figure 1, which is a schematic diagram of the process flow of the method for preparing a variety of multi-layer composite membranes provided in the embodiments of the present application. The method for preparing a variety of multi-layer composite membranes provided in the present application can be used for the production of multi-purpose composite membranes.

[0053] In order to more clearly illustrate the structure of the method for preparing various types of multi-layer composite membrane systems, the method for preparing various types of multi-layer composite membrane systems will be introduced below with reference to the accompanying drawings.

[0054] For example, referring to FIG1 , a method for preparing a multi-layer composite film system includes the following steps:

[0055] A first metal film layer 200 is formed on the substrate 100 by a vacuum coating method;

[0056] Performing surface roughening treatment on the first metal film layer 200;

[0057] The second metal film layer 300 is prepared on the first metal film layer 200 after the surface roughening treatment by using a vacuum coating method.

[0058] In some embodiments, the substrate 100 includes a ceramic substrate, a silicon wafer, an insulating substrate, or a semiconductor substrate.

[0059] In some embodiments, the ceramic substrate includes an aluminum oxide ceramic substrate or an aluminum nitride ceramic substrate, and the semiconductor substrate includes a solar cell.

[0060] In some embodiments, when a vacuum coating method is used to prepare a first metal film layer 200 on a substrate 100, the following steps are specifically included: a cleaning agent is used to clean the substrate 100 to remove surface contaminants, and the cleaning agent includes hydrofluoric acid, hydrochloric acid and pure water, wherein the volume ratio of hydrofluoric acid, hydrochloric acid and pure water is (2mL~5mL):(2mL~5mL):100mL.

[0061] In some embodiments, the method for preparing various types of multi-layer composite film systems further satisfies at least one of the following conditions:

[0062] (1) The preparation material of the first metal film layer 200 includes one or more alloys of metals selected from the group consisting of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti, and W;

[0063] (2) The preparation material of the first metal film layer 200 includes metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti or W.

[0064] In some embodiments, the thickness of the first metal film layer 200 is 100 nm to 300 nm.

[0065] In some embodiments, the surface roughening treatment of the first metal film layer 200 specifically includes the following steps:

[0066] After breaking the vacuum, the first metal film layer 200 is subjected to wet sandblasting treatment, with a sandblasting pressure of 0.1 MPa to 0.2 MPa and a sandblasting time of 5 s to 20 s, and then dried;

[0067] The first metal film layer 200 after the drying process is subjected to plasma etching, the etching pressure is 0.1 Pa to 1 Pa, the etching gas is argon, and the etching time is 20s to 50s.

[0068] In some embodiments, the method for preparing various types of multi-layer composite membrane systems further includes the following steps:

[0069] Refer to Figure 2, which is a schematic diagram of the film layers deposited in a multi-layer composite film system with improved adhesion according to an embodiment of the present invention. A vacuum coating method is used to prepare a second metal film layer 300 to an Nth metal film layer 400 on a first metal film layer 200 after surface roughening treatment, where N is an integer ≥3.

[0070] In some embodiments, the method for preparing various types of multi-layer composite membrane systems further satisfies at least one of the following conditions:

[0071] (1) The thickness of the second metal film layer 300 is 100 nm to 300 nm;

[0072] (2) The thickness of the Nth metal film layer 400 is 100 nm to 300 nm.

[0073] In some embodiments, when performing surface roughening treatment, since it is necessary to break the vacuum environment, oxide layers will be formed on the first metal film layer 200 and the second metal film layer 300 to the Nth metal film layer 400 respectively after breaking the vacuum environment. The oxide layers will be removed together during the surface roughening treatment. Therefore, the thickness of the oxide layer needs to be taken into account as compensation during deposition, that is, the thickness of the corresponding oxide layer part is compensated in the preparation of the thickness of the first metal film layer 200 and the second metal film layer 300 to the Nth metal film layer 400. Therefore, the thickness of the first metal film layer 200, the thickness of the second metal film layer 300, and the thickness of the Nth metal film layer 400 are respectively more than 100 nm.

[0074] In some embodiments, the method for preparing various types of multi-layer composite membrane systems further satisfies at least one of the following conditions:

[0075] (1) The preparation material of the second metal film layer 300 and the preparation material of the Nth metal film layer 400 independently include one or more alloys of metals selected from the group consisting of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti, and W;

[0076] (2) The preparation material of the second metal film layer 300 and the preparation material of the Nth metal film layer 400 independently include metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti or W.

[0077] In some embodiments, the vacuum coating process used to prepare the second metal film layer 300 to the Nth metal film layer 400 on the first metal film layer 200 after surface roughening is the same as the vacuum coating process used to prepare the first metal film layer 200.

[0078] In some embodiments, the first metal film layer 200 is a single film layer or an adventitious film layer. Referring to FIG. 2 , FIG. 2 is a schematic diagram illustrating the preparation of a single film layer using the method for preparing a multi-type multi-layer composite film system of the present invention. Referring to FIG. 3 , FIG. 3 is a schematic diagram illustrating the preparation of an adventitious film layer using the method for preparing a multi-type multi-layer composite film system of the present invention.

[0079] An embodiment of the present application further provides a conductive film.

[0080] A conductive film is prepared by adopting the method for preparing multiple types of multi-layer composite film systems.

[0081] An embodiment of the present application also provides a semiconductor device.

[0082] A semiconductor device includes the conductive film.

[0083] In some embodiments, the semiconductor device includes a discrete semiconductor, an optoelectronic semiconductor, a logic IC, an analog IC, a memory, or the like.

[0084] Another embodiment of the present application further provides a solar cell.

[0085] A solar cell comprises the above-mentioned conductive film.

[0086] Example 1

[0087] This embodiment provides a method for preparing various types of multi-layer composite membrane systems, including the following steps:

[0088] (1) A cleaning agent is used to clean the alumina ceramic substrate 100 to remove surface contaminants. As shown in FIG2 , the cleaning agent is hydrofluoric acid, hydrochloric acid, and pure water in a volume ratio of 2 mL:2 mL:100 mL.

[0089] (2) A first metal film layer 200 is formed on the alumina ceramic substrate 100 by a vacuum coating method. As shown in FIG3 , the thickness of the first metal film layer 200 is 100 nm. The material for forming the first metal film layer 200 includes metal Al.

[0090] (3) After breaking the vacuum, the first metal film layer 200 is subjected to wet sandblasting, as shown in FIG4 , with a sandblasting pressure of 0.1 MPa and a sandblasting time of 20 s, followed by drying;

[0091] The first metal film layer 200 after the drying process is subjected to plasma etching, with an etching pressure of 0.1 Pa, an etching gas of argon, and an etching time of 50 seconds.

[0092] (4) A second metal film layer 300 is formed on the surface-roughened first metal film layer 200 by vacuum coating. As shown in FIG5 , the thickness of the second metal film layer 300 is 100 nm. The second metal film layer 300 is made of the same material as the first metal film layer 200.

[0093] (5) A third metal film layer, a fourth metal film layer, and finally an Nth metal film layer 400 are sequentially formed on the surface-roughened second metal film layer 300 using a vacuum coating method. As shown in FIG6 , the thickness of the third metal film layer, the thickness of the fourth metal film layer, and the thickness of the Nth metal film layer 400 are each 100 nm. The materials used to prepare the third metal film layer, the fourth metal film layer, and the Nth metal film layer 400 are the same as those used to prepare the first metal film layer 200.

[0094] Example 2

[0095] This embodiment provides a method for preparing various types of multi-layer composite membrane systems, as shown in FIG2 , including the following steps:

[0096] (1) The silicon wafer is cleaned with a cleaning agent to remove surface contaminants. The cleaning agent is hydrofluoric acid, hydrochloric acid and pure water in a volume ratio of 2 mL:2 mL:100 mL.

[0097] (2) A first adventitious film layer is formed on a silicon wafer by a vacuum coating method. The thickness of the first adventitious film layer is 300 nm. The materials used to form the first adventitious film layer include metal Al and Cr alloy.

[0098] (3) After breaking the vacuum, the first adventitious film layer is subjected to wet sandblasting treatment, with a sandblasting pressure of 0.2 MPa and a sandblasting time of 5 s, and then dried;

[0099] The first adventitious film layer after drying is subjected to plasma etching, with an etching pressure of 1 Pa, an etching gas of argon, and an etching time of 20 s.

[0100] (4) A second adventitious film layer is prepared on the first adventitious film layer after surface roughening by a vacuum coating method. The thickness of the second adventitious film layer is 300 nm. The preparation material of the second adventitious film layer is the same as that of the first adventitious film layer.

[0101] (5) A third, fourth, and Nth indeterminate film layers are sequentially formed on the second indeterminate film layer after the surface roughening treatment by vacuum coating. The thickness of the third, fourth, and Nth indeterminate film layers is 300 nm, respectively. The materials used to prepare the third, fourth, and Nth indeterminate film layers are the same as those used to prepare the first indeterminate film layer.

[0102] Comparative Example 1

[0103] This comparative example provides a method for preparing a variety of multi-layer composite membrane systems. The method for preparing a variety of multi-layer composite membrane systems in this comparative example is basically the same as that in Example 1, except that step (3) is omitted.

[0104] Comparative Example 2

[0105] This comparative example provides a method for preparing a variety of multi-layer composite membrane systems. The method for preparing a variety of multi-layer composite membrane systems in this comparative example is basically the same as that in Example 2, except that step (3) is omitted.

[0106] Performance tests were performed on various types of multilayer composite films prepared in Example 1, Example 2, Comparative Example 1, and Comparative Example 2. The test results are shown in Table 1.

[0107] Table 1

[0108] In summary, the method for preparing various types of multi-layer composite film systems of the present invention can enhance the adhesion between film layers by performing surface roughening treatment on the first metal film layer 200. For example, the present application increases the surface roughness of the first metal film layer 200 by sandblasting, and facilitates the deposition of other film layers again after removing the surface oxide layer, so that the film layers are mechanically bonded, thereby improving the adhesion between the film layers, so that some film layers that cannot be bonded under vacuum can be effectively connected by mechanical bonding, reducing equipment investment costs, and realizing the preparation of various types of multi-layer film systems by a single device, effectively reducing or preventing rework of the substrate 100, and greatly reducing production costs.

[0109] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0110] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0111] The above-described embodiments merely illustrate several implementations of the present invention. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that variations and modifications are possible within the scope of the present invention, as would be apparent to one skilled in the art. These variations and modifications fall within the scope of the present invention. Therefore, the scope of the present invention shall be determined by the appended claims.

Claims

1. A method for preparing a multi-type multi-layer composite film system, characterized in that: The steps include: A first metal film layer (200) is prepared on a substrate (100) by using a vacuum coating method; Performing a surface roughening treatment on the first metal film layer (200); as well as A second metal film layer (300) is prepared on the first metal film layer (200) after the surface roughening treatment by using a vacuum coating method.

2. The method for preparing a multi-type multi-layer composite film system according to claim 1, characterized in that: The substrate (100) comprises a ceramic substrate, a silicon wafer, an insulating substrate or a semiconductor substrate.

3. The method for preparing a multi-type multi-layer composite film system according to claim 2, characterized in that: The ceramic substrate includes an aluminum oxide ceramic substrate and an aluminum nitride ceramic substrate.

4. The method for preparing a multi-type multi-layer composite film system according to claim 2, characterized in that: The semiconductor substrate includes a solar cell.

5. The method for preparing a multi-type multi-layer composite film system according to any one of claims 1 to 4, characterized in that: When a first metal film layer (200) is prepared on a substrate (100) by using a vacuum coating method, the method specifically comprises the following steps: using a cleaning agent to clean the substrate (100) to remove surface pollutants, the cleaning agent comprises hydrofluoric acid, hydrochloric acid and pure water, wherein the volume ratio of hydrofluoric acid, hydrochloric acid and pure water is (2mL-5mL):(2mL-5mL):100mL.

6. The method for preparing a multi-type multi-layer composite film system according to any one of claims 1 to 5, characterized in that: The preparation material of the first metal film layer (200) includes one or more alloys of metals selected from the group consisting of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti and W.

7. The method for preparing a multi-type multi-layer composite film system according to any one of claims 1 to 6, characterized in that: The preparation material of the first metal film layer (200) includes metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti or W.

8. The method for preparing a multi-type multi-layer composite film system according to any one of claims 1 to 7, characterized in that: The thickness of the first metal film layer (200) is 100nm-300nm.

9. The method for preparing a multi-type multi-layer composite film system according to any one of claims 1 to 8, characterized in that: When the surface roughening treatment is performed on the first metal film layer (200), the following steps are specifically included: After breaking the vacuum, the first metal film layer (200) is subjected to wet sandblasting, the sandblasting pressure is 0.1Mpa to 0.2Mpa, the sandblasting time is 5s to 20s, and a drying process is performed after the wet sandblasting process; The first metal film layer (200) after the drying process is subjected to plasma etching, the etching pressure is 0.1Pa-1Pa, the etching gas is argon, and the etching time is 20s-50s.

10. The method for preparing a multi-type multi-layer composite film system according to any one of claims 1 to 9, characterized in that: The method for preparing multiple types of multi-layer composite membranes also includes the following steps: The second metal film layer (300) to the Nth metal film layer (400) are prepared on the first metal film layer (200) after surface roughening by a vacuum coating method, wherein N is an integer ≥3.

11. The method for preparing a multi-type multi-layer composite film system according to claim 10, characterized in that: The thickness of the second metal film layer (300) is 100nm-300nm.

12. The method for preparing a multi-type multi-layer composite film system according to claim 10 or 11, characterized in that: The thickness of the Nth metal film layer (400) is 100nm-300nm.

13. The method for preparing a multi-type multi-layer composite film system according to any one of claims 10 to 12, characterized in that: The preparation material of the second metal film layer (300) and the preparation material of the Nth metal film layer (400) independently include one or more alloys of metals selected from the group consisting of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti and W.

14. The method for preparing a multi-type multi-layer composite film system according to any one of claims 10 to 13, characterized in that: The preparation material of the second metal film layer (300) and the preparation material of the Nth metal film layer (400) independently include metal nitrides or metal oxides of Al, Cr, Ni, Mn, Pd, Bi, Nb, Ta, Pa, V, Ti or W.

15. The method for preparing a multi-type multi-layer composite film system according to any one of claims 10 to 14, characterized in that: The vacuum coating process used to prepare the second metal film layer (300) to the Nth metal film layer (400) on the first metal film layer (200) after surface roughening is the same as the vacuum coating process used to prepare the first metal film layer (200).

16. The method for preparing a multi-type multi-layer composite film system according to any one of claims 1 to 15, characterized in that: The first metal film layer (200) is a single film layer or an indefinite film layer.

17. A conductive film, characterized in that: The multi-layer composite film is prepared by the method for preparing a plurality of types of multi-layer composite films as described in any one of claims 1 to 16.

18. A semiconductor device, characterized in that: Comprising the conductive film as claimed in claim 17.

19. The semiconductor device according to claim 18, characterized in that The semiconductor devices include discrete device semiconductors, optoelectronic semiconductors, logic ICs, analog ICs, and memories.

20. A solar cell, characterized in that: The solar cell comprises the conductive film according to claim 17.

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