Display panel

Abstract

Disclosed in embodiments of the present application is a display panel, comprising a driving substrate, first LED structures, second LED structures, third LED structures, and at least one electrical adapter component which are stacked in sequence, wherein the at least one electrical adapter component is arranged on the side of the third LED structures close to the driving substrate, and one electrical adapter component is correspondingly connected onto one conductive pad; at least one of a first independent electrode, a second independent electrode, and a third independent electrode is connected to one electrical adapter component by means of a via hole.

Description

Display panel Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel. Background Art

[0002] Among related technologies, micro light-emitting diodes (LEDs) are considered to be the best display solutions for AR (augmented reality) and VR (virtual reality) products. Micro semiconductor light-emitting diodes perform well in terms of brightness and lifespan. Currently, monochrome micro semiconductor light-emitting diodes can realize the manufacturing of high-resolution displays, but the manufacturing of full-color, high-resolution display panels still faces major technical difficulties.

[0003] In the related art, R / G / B single-color micro-LEDs are transferred separately to a driver substrate through mass transfer to assemble a full-color display. However, integrating millions or even tens of millions of micro-LEDs with a pixel driver circuit array is extremely challenging. Ensuring a stable and efficient manufacturing process and transfer reliability becomes very difficult, and this method cannot achieve micro-LED displays with higher resolutions. SUMMARY OF THE INVENTION

[0004] An embodiment of the present application provides a display panel that can improve resolution.

[0005] An embodiment of the present application provides a display panel, comprising:

[0006] a driving substrate, the driving substrate comprising a plurality of conductive pads arranged at intervals;

[0007] A plurality of pixels are provided on the driving substrate, and the pixels include:

[0008] a first LED structure, the first LED structure being disposed on the driving substrate, the first LED structure comprising a first independent electrode located on a side away from the driving substrate, the first independent electrode being electrically connected to one of the conducting pads;

[0009] a second LED structure, the second LED structure being arranged on a side of the first LED structure away from the driving substrate, the second LED structure comprising a second independent electrode located on a side away from the first LED structure, the second independent electrode being electrically connected to another of the conductive pads;

[0010] a third LED structure, the third LED structure being disposed on a side of the second LED structure away from the driving substrate, the third LED structure comprising a third independent electrode located on a side away from the second LED structure, the third independent electrode being electrically connected to another of the conductive pads; and

[0011] At least one electrical adapter component, the at least one electrical adapter component is disposed on a side of the third LED structure close to the driving substrate, and one of the electrical adapter components is correspondingly connected and disposed on one of the conductive pads;

[0012] At least one of the first independent electrode, the second independent electrode and the third independent electrode is connected to the electrical transfer component through a via hole; in a direction perpendicular to the surface of the display panel, the via hole and the electrical transfer component are overlapped. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] FIG1 is a schematic structural diagram of a display panel provided in an embodiment of the present application;

[0014] FIG2 is a schematic diagram of a top view of a pixel structure of a display panel provided in an embodiment of the present application;

[0015] FIG3 is a schematic structural diagram of step S1 of the method for manufacturing a display panel provided in an embodiment of the present application;

[0016] FIG4 is a schematic structural diagram of step S2 of the method for manufacturing a display panel provided in an embodiment of the present application;

[0017] FIG5 is a schematic structural diagram of step S3 of the method for manufacturing a display panel provided in an embodiment of the present application;

[0018] FIG6 is a schematic structural diagram of step S4 of the method for manufacturing a display panel provided in an embodiment of the present application;

[0019] FIG7 is a schematic structural diagram of step S5 of the method for manufacturing a display panel provided in an embodiment of the present application;

[0020] FIG8 is a schematic structural diagram of step S6 of the method for manufacturing a display panel provided in an embodiment of the present application;

[0021] FIG9 is a schematic structural diagram of step S7 of the method for manufacturing a display panel provided in an embodiment of the present application;

[0022] FIG10 is a schematic structural diagram of step S8 of the method for manufacturing a display panel provided in an embodiment of the present application;

[0023] FIG11 is another schematic structural diagram of a display panel provided in an embodiment of the present application;

[0024] FIG12 is a schematic structural diagram of step S1 of another method for manufacturing a display panel provided in an embodiment of the present application;

[0025] FIG13 is a schematic structural diagram of step S2 of another method for manufacturing a display panel provided in an embodiment of the present application;

[0026] FIG14 is a schematic structural diagram of step S3 of another method for manufacturing a display panel provided in an embodiment of the present application;

[0027] FIG15 is a structural diagram of step S4 of another method for manufacturing a display panel provided in an embodiment of the present application;

[0028] FIG16 is a schematic structural diagram of step S5 of another method for manufacturing a display panel provided in an embodiment of the present application;

[0029] FIG17 is a schematic structural diagram of step S6 of another method for manufacturing a display panel provided in an embodiment of the present application;

[0030] FIG18 is a schematic structural diagram of step S7 of another method for manufacturing a display panel provided in an embodiment of the present application;

[0031] FIG19 is a structural diagram of step S8 of another method for manufacturing a display panel provided in an embodiment of the present application. Modes for Carrying Out the Invention

[0032] The following will clearly and completely describe the technical solutions in the embodiments of the present application in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application and are not used to limit the present application. In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inside" and "outside" refer to the outline of the device; the terms "first", "second", "third", etc. are used only as labels and do not impose numerical requirements or establish an order.

[0033] The present application provides a display panel, which is described in detail below. It should be noted that the order of description of the following embodiments does not limit the preferred order of the embodiments.

[0034] It should be understood that in related technologies, in order to improve the resolution of micro-LED panels and avoid the process steps of mass transfer, stacked three-color light-emitting diodes (LEDs) are directly formed on a silicon substrate with thin-film transistors. However, the direct stacking method used to form the three-color LED stack has a relatively low preparation efficiency. The depth of the hole required to be dug for the LED farthest from the substrate is too deep, the planar size of the deep hole is large, and the N electrode often breaks in the deep hole, resulting in reduced resolution and the LED lighting effect not meeting expectations.

[0035] Therefore, the display panel of the embodiment of the present application reduces the depth of the via hole by setting an electrical conversion component between at least one of the first independent electrode, the second independent electrode and the third independent electrode and the corresponding conductive pad, thereby reducing the size of the via hole, thereby improving the resolution and reducing the risk of the independent electrode being easily broken in the via hole.

[0036] An embodiment of the present application provides a display panel, comprising:

[0037] a driving substrate, the driving substrate comprising a plurality of conductive pads arranged at intervals;

[0038] A plurality of pixels are provided on the driving substrate, and the pixels include:

[0039] a first LED structure, the first LED structure being disposed on the driving substrate, the first LED structure comprising a first independent electrode located on a side away from the driving substrate, the first independent electrode being electrically connected to one of the conducting pads;

[0040] a second LED structure, the second LED structure being arranged on a side of the first LED structure away from the driving substrate, the second LED structure comprising a second independent electrode located on a side away from the first LED structure, the second independent electrode being electrically connected to another of the conductive pads;

[0041] a third LED structure, the third LED structure being disposed on a side of the second LED structure away from the driving substrate, the third LED structure comprising a third independent electrode located on a side away from the second LED structure, the third independent electrode being electrically connected to another of the conductive pads; and

[0042] At least one electrical adapter component, the at least one electrical adapter component is disposed on a side of the third LED structure close to the driving substrate, and one of the electrical adapter components is correspondingly connected and disposed on one of the conductive pads;

[0043] At least one of the first independent electrode, the second independent electrode and the third independent electrode is connected to the electrical transfer component through a via hole; in a direction perpendicular to the surface of the display panel, the via hole and the electrical transfer component are overlapped.

[0044] Optionally, in some embodiments of the present application, the display panel further includes a first bonding layer and a second bonding layer, wherein the materials of the first bonding layer and the second bonding layer are both insulating materials, the first bonding layer is connected and arranged on a surface of the driving substrate close to the first LED structure, and the second bonding layer is connected and arranged on a surface of the first LED structure close to the driving substrate, and the first bonding layer and the second bonding layer are bonded to each other;

[0045] The first LED structure includes a first common electrode, a first conductive semiconductor layer, a first light-emitting material layer, a second conductive semiconductor layer and the first independent electrode stacked in sequence on a side of the second bonding layer away from the driving substrate;

[0046] At least one of the electrical transfer components includes a first electrical transfer component, the plurality of conductive pads include a first conductive pad, the first bonding layer defines a first hollow hole exposing the first conductive pad, and the first electrical transfer component is filled in the first hollow hole and connected to the first conductive pad;

[0047] The via includes a first via opened in the first LED structure, the first via passes through the second conductive semiconductor layer, the first light-emitting material layer, the first conductive semiconductor layer, the first common electrode and the second bonding layer, and the first independent electrode extends to cover the first via and is connected to the first electrical transfer component.

[0048] Optionally, in some embodiments of the present application, the display panel further includes a third bonding layer and a fourth bonding layer, wherein the materials of the third bonding layer and the fourth bonding layer are both insulating materials, the third bonding layer is connected and arranged on a surface of the first LED structure close to the second LED structure, the fourth bonding layer is connected and arranged on a surface of the second LED structure close to the driving substrate, and the third bonding layer is bonded to the fourth bonding layer;

[0049] The second LED structure includes a second common electrode, a third conductive type semiconductor layer, a second light emitting material layer, a fourth conductive type semiconductor layer and the second independent electrode stacked in sequence on a side of the fourth bonding layer away from the driving substrate;

[0050] The plurality of conductive pads include a second conductive pad, at least one of the electrical transfer components includes a second electrical transfer component, the second electrical transfer component includes a first connecting portion and a second connecting portion, the first bonding layer defines a second hollow hole exposing the second conductive pad, the first connecting portion is filled in the second hollow hole and connected to the second conductive pad, the first LED structure defines a third hollow hole, the third hollow hole passes through the third bonding layer, the second conductive semiconductor layer, the first light-emitting material layer, the first conductive semiconductor layer, the first common electrode, and the second bonding layer and exposes the first connecting portion, the second connecting portion is filled in the third hollow hole and connected to the first connecting portion;

[0051] The via includes a second via opened in the second LED structure, the second via passes through the fourth conductive semiconductor layer, the second light-emitting material layer, the third conductive semiconductor layer, the second common electrode and the fourth bonding layer, and the second independent electrode extends to cover the second via and is connected to the second connecting portion.

[0052] Optionally, in some embodiments of the present application, the display panel further includes a fifth bonding layer and a sixth bonding layer, wherein the materials of the fifth bonding layer and the sixth bonding layer are both insulating materials, the fifth bonding layer is connected and arranged on a side of the second LED structure close to the third LED structure, the sixth bonding layer is connected and arranged on a side of the third LED structure close to the driving substrate, and the fifth bonding layer is bonded to the sixth bonding layer;

[0053] The third LED structure includes a third common electrode, a fifth conductive type semiconductor layer, a third light-emitting material layer, a sixth conductive type semiconductor layer and the third independent electrode, which are sequentially stacked on a side of the sixth bonding layer away from the driving substrate;

[0054] The plurality of conductive pads include a third conductive pad, at least one of the electrical transfer components includes a third electrical transfer component, the third electrical transfer component includes a third connecting portion, a fourth connecting portion, and a fifth connecting portion, the first bonding layer is provided with a fourth hollow hole exposing the third conductive pad, the third connecting portion is filled in the fourth hollow hole and connected to the third conductive pad; the first LED structure is provided with a fifth hollow hole, the fifth hollow hole passes through the third bonding layer, the second conductive semiconductor layer, the first light-emitting material layer, the first conductive semiconductor layer, the first common electrode, and the second bonding layer, and exposes the third connecting portion, the fourth connecting portion is filled in the fifth hollow hole and connected to the third connecting portion; the second LED structure is provided with a sixth hollow hole, the sixth hollow hole passes through the fifth bonding layer, the fourth conductive semiconductor layer, the second light-emitting material layer, the third conductive semiconductor layer, the second common electrode, and the fourth bonding layer, and exposes the fourth connecting portion, the fifth connecting portion is filled in the sixth hollow hole and connected to the fourth connecting portion;

[0055] The via includes a third via opened in the third LED structure, the third via passes through the sixth conductive semiconductor layer, the third light-emitting material layer, the fifth conductive semiconductor layer, the third common electrode and the sixth bonding layer, and the third independent electrode extends to cover the third via and is connected to the fifth connecting portion.

[0056] Optionally, in some embodiments of the present application, in a direction perpendicular to the surface of the display panel, the first via hole is aligned with the first hollow hole, the second via hole, the second hollow hole and the third hollow hole are aligned, and the third via hole, the fourth hollow hole, the fifth hollow hole and the sixth hollow hole are aligned.

[0057] Optionally, in some embodiments of the present application, the slope angles from the first via hole to the third via hole and from the first hollow hole to the sixth hollow hole are both between 85 degrees and 90 degrees.

[0058] Optionally, in some embodiments of the present application, the plurality of conductive pads further include a fourth conductive pad, and the first common electrode, the second common electrode, and the third common electrode are all electrically connected to the fourth conductive pad;

[0059] The first bonding layer has a first opening, the first opening is filled with a first conductive bonding portion, the first conductive bonding portion is connected to the fourth conductive pad, and the second bonding layer has a second opening, the second opening is filled with a second conductive bonding portion, the second conductive bonding portion is connected to the first common electrode and bonded to the first conductive bonding portion;

[0060] The third bonding layer has a third opening formed therein, the third opening also penetrating the first independent electrode, the second conductive type semiconductor layer, the first light emitting material layer, and the first conductive type semiconductor layer; the third opening is filled with a third conductive bonding portion, the third conductive bonding portion is connected to the first common electrode; the fourth bonding layer has a fourth opening formed therein, the fourth opening is filled with a fourth conductive bonding portion, the fourth conductive bonding portion is connected to the second common electrode and bonded to the third conductive bonding portion;

[0061] A fifth opening is provided on the fifth bonding layer, and the fifth opening also passes through the second independent electrode, the fourth conductive semiconductor layer, the second light-emitting material layer and the third conductive semiconductor layer. The fifth opening is filled with a fifth conductive bonding portion, and the fifth conductive bonding portion is connected to the second common electrode. A sixth opening is provided on the sixth bonding layer, and the sixth opening is filled with a sixth conductive bonding portion. The sixth conductive bonding portion is connected to the third common electrode and bonded to the fifth conductive bonding portion.

[0062] Optionally, in some embodiments of the present application, in a direction perpendicular to the panel surface of the display panel, the first opening to the sixth opening are all aligned.

[0063] Optionally, in some embodiments of the present application, a first insulating layer is provided between the portion of the first independent electrode extending into the first via hole and the sidewall of the first via hole;

[0064] A second insulating layer is provided between the second connecting portion and the sidewall of the third hollow hole, and a third insulating layer is provided between the portion of the second independent electrode extending into the second via hole and the sidewall of the second via hole;

[0065] A fourth insulating layer is further provided on the sidewalls of the fourth connecting portion and the fifth hollow hole, a fifth insulating layer is provided between the fifth connecting portion and the sidewalls of the sixth hollow hole, and a sixth insulating layer is provided between the portion of the third independent electrode extending into the third via hole and the sidewalls of the third via hole;

[0066] A seventh insulating layer is disposed between the third conductive bonding portion and the sidewall of the third opening, and an eighth insulating layer is disposed between the fifth conductive bonding portion and the sidewall of the fifth opening.

[0067] Optionally, in some embodiments of the present application, the display panel further includes a first bonding layer and a second bonding layer, wherein the materials of the first bonding layer and the second bonding layer are both metal materials, the first bonding layer is connected and arranged on a surface of the driving substrate close to the first LED structure, and the second bonding layer is connected and arranged on a surface of the first LED structure close to the driving substrate, and the first bonding layer and the second bonding layer are bonded to each other;

[0068] The first LED structure includes a first common electrode, a first conductive semiconductor layer, a first light-emitting material layer, a second conductive semiconductor layer and the first independent electrode stacked in sequence on a side of the second bonding layer away from the driving substrate;

[0069] The multiple conductive pads include a first conductive pad, the via includes a first via opened in the first LED structure, the first via passes through the second conductive semiconductor layer, the first light-emitting material layer, the first conductive semiconductor layer, the first common electrode, the second bonding layer and the first bonding layer and exposes the first conductive pad, and the first independent electrode extends to cover the first via and is connected to the first conductive pad.

[0070] Optionally, in some embodiments of the present application, the display panel further includes a third bonding layer and a fourth bonding layer, wherein the materials of the third bonding layer and the fourth bonding layer are both insulating materials, the third bonding layer is connected and arranged on a surface of the first LED structure close to the second LED structure, the fourth bonding layer is connected and arranged on a surface of the second LED structure close to the driving substrate, and the third bonding layer is bonded to the fourth bonding layer;

[0071] The second LED structure includes a second common electrode, a third conductive type semiconductor layer, a second light emitting material layer, a fourth conductive type semiconductor layer and the second independent electrode stacked in sequence on a side of the fourth bonding layer away from the driving substrate;

[0072] The plurality of conductive pads include a second conductive pad, at least one of the electrical transfer components includes a first electrical transfer component, the first LED structure is provided with a first hollow hole, the first hollow hole passes through the third bonding layer, the second conductive semiconductor layer, the first light-emitting material layer, the first conductive semiconductor layer, the first common electrode, the second bonding layer, and the first bonding layer and exposes the second conductive pad, the first electrical transfer component is filled in the first hollow hole and connected to the second conductive pad;

[0073] The via includes a second via opened in the second LED structure, the second via passes through the fourth conductive semiconductor layer, the second light-emitting material layer, the third conductive semiconductor layer, the second common electrode and the fourth bonding layer, and the second independent electrode extends to cover the second via and is connected to the first electrical transfer component.

[0074] Optionally, in some embodiments of the present application, the display panel further includes a fifth bonding layer and a sixth bonding layer, wherein the materials of the fifth bonding layer and the sixth bonding layer are both insulating materials, the fifth bonding layer is connected and arranged on a side of the second LED structure close to the third LED structure, the sixth bonding layer is connected and arranged on a side of the third LED structure close to the driving substrate, and the fifth bonding layer is bonded to the sixth bonding layer;

[0075] The third LED structure includes a third common electrode, a fifth conductive type semiconductor layer, a third light-emitting material layer, a sixth conductive type semiconductor layer and the third independent electrode, which are sequentially stacked on a side of the sixth bonding layer away from the driving substrate;

[0076] The plurality of conductive pads include a third conductive pad, at least one of the electrical transfer components includes a second electrical transfer component, the second electrical transfer component includes a first connecting portion and a second connecting portion, the first LED structure is provided with a second hollow hole, the second hollow hole passes through the third bonding layer, the second conductive semiconductor layer, the first light-emitting material layer, the first conductive semiconductor layer, the first common electrode, the second bonding layer, and the first bonding layer and exposes the third conductive pad, the first connecting portion is filled in the second hollow hole and connected to the third conductive pad; the second LED structure is provided with a third hollow hole, the third hollow hole passes through the fifth bonding layer, the fourth conductive semiconductor layer, the second light-emitting material layer, the third conductive semiconductor layer, the second common electrode, and the fourth bonding layer and exposes the first connecting portion, the second connecting portion is filled in the third hollow hole and connected to the first connecting portion;

[0077] The via includes a third via opened in the third LED structure, the third via passes through the sixth conductive semiconductor layer, the third light-emitting material layer, the fifth conductive semiconductor layer, the third common electrode and the sixth bonding layer, and the third independent electrode extends to cover the third via and is connected to the second connecting portion.

[0078] Optionally, in some embodiments of the present application, in a direction perpendicular to the surface of the display panel, the second via hole is aligned with the first hollow hole, and the third via hole, the second hollow hole and the third hollow hole are aligned.

[0079] Optionally, in some embodiments of the present application, the slope angles from the first via hole to the third via hole and from the first hollow hole to the third hollow hole are both between 85 degrees and 90 degrees.

[0080] Optionally, in some embodiments of the present application, the plurality of conductive pads further include a fourth conductive pad, the first common electrode, the second common electrode, the third common electrode, and the second bonding layer are all electrically connected to the fourth conductive pad, and the first bonding layer is connected to the fourth conductive pad;

[0081] The third bonding layer has a first opening, the first opening also passes through the first independent electrode, the second conductive semiconductor layer, the first light-emitting material layer, the first conductive semiconductor layer and the first common electrode, the first opening is filled with a first conductive bonding portion, the first conductive bonding portion is connected to the second bonding layer, the fourth bonding layer has a second opening, the second opening is filled with a second conductive bonding portion, the second conductive bonding portion is connected to the second common electrode and bonded to the first conductive bonding portion;

[0082] A third opening is provided on the fifth bonding layer, and the third opening also passes through the second independent electrode, the fourth conductive semiconductor layer, the second light-emitting material layer and the third conductive semiconductor layer. The third opening is filled with a third conductive bonding portion, and the third conductive bonding portion is connected to the second common electrode. A fourth opening is provided on the sixth bonding layer, and the fourth opening is filled with a fourth conductive bonding portion. The fourth conductive bonding portion is connected to the third common electrode and bonded to the third conductive bonding portion.

[0083] Optionally, in some embodiments of the present application, in a direction perpendicular to the panel surface of the display panel, the first opening to the fourth opening are all aligned.

[0084] Optionally, in some embodiments of the present application, a first insulating layer is provided between the portion of the first independent electrode extending into the first via hole and the sidewall of the first via hole;

[0085] A second insulating layer is provided between the first electrical transfer member and the side wall of the first hollow hole, and a third insulating layer is provided between the portion of the second independent electrode extending into the second via hole and the side wall of the second via hole;

[0086] A fourth insulating layer is further provided on the sidewalls of the first connecting portion and the second hollow hole, a fifth insulating layer is provided between the second connecting portion and the sidewalls of the third hollow hole, and a sixth insulating layer is provided between the portion of the third independent electrode extending into the third via hole and the sidewalls of the third via hole;

[0087] A seventh insulating layer is disposed between the first conductive bonding portion and the sidewall of the first opening, and an eighth insulating layer is disposed between the third conductive bonding portion and the sidewall of the third opening.

[0088] Optionally, in some embodiments of the present application, the first conductive semiconductor layer, the third conductive semiconductor layer and the fifth conductive semiconductor layer are P-type semiconductor layers, and the second conductive semiconductor layer, the fourth conductive semiconductor layer and the sixth conductive semiconductor layer are N-type semiconductor layers.

[0089] Optionally, in some embodiments of the present application, the first LED structure is configured to emit red light, the second LED structure is configured to emit green light, and the third LED structure is configured to emit blue light.

[0090] Optionally, in some embodiments of the present application, the display panel further includes a first Bragg reflective layer and a second Bragg reflective layer, wherein the first Bragg reflective layer is disposed between the fourth bonding layer and the second common electrode, and the first Bragg reflective layer is configured to reflect light emitted by the second LED structure and transmit light emitted by the first LED structure;

[0091] The second Bragg reflection layer is disposed between the sixth bonding layer and the third common electrode, and is configured to reflect light emitted by the third LED structure and transmit light emitted by the first LED structure and the second LED structure.

[0092] Optionally, in some embodiments of the present application, the widths of the first via hole, the second via hole, and the third via hole are all less than or equal to 1 micron.

[0093] Optionally, in some embodiments of the present application, the pixel has a first corner area, a second corner area, a third corner area and a fourth corner area, and in the orthographic projection pattern of the display panel, the first via hole is set in the first corner area, the second via hole is set in the second corner area, the third via hole is set in the third corner area, and the first opening is set in the fourth corner area.

[0094] The display panel of an embodiment of the present application includes a driver substrate, a first LED structure, a second LED structure, a third LED structure, and at least one electrical transfer component, which are sequentially stacked. The at least one electrical transfer component is disposed on a side of the third LED structure close to the driver substrate, and one electrical transfer component is correspondingly connected to a conductive pad. At least one of the first independent electrode, the second independent electrode, and the third independent electrode is connected to the electrical transfer component via a via hole. The via hole and the electrical transfer component overlap in a direction perpendicular to the surface of the display panel. By disposing the electrical transfer component between at least one of the first independent electrode, the second independent electrode, and the third independent electrode and the corresponding conductive pad, the embodiment of the present application reduces the depth of the via hole, thereby reducing the size of the via hole, thereby improving resolution and reducing the risk of the independent electrode fracturing in the via hole.

[0095] 1 , an embodiment of the present application provides a display panel 100 , including a driving substrate 10 and a plurality of pixels 20 . The plurality of pixels 20 are disposed on the driving substrate 10 .

[0096] The driver substrate 10 includes a plurality of spaced conductive pads. The pixel 20 includes a first LED structure 2a, a second LED structure 2b, and a third LED structure 2c arranged in a stacked manner. The pixel 20 also includes at least one electrical transfer component. The at least one electrical transfer component is disposed on a side of the third LED structure 2c that is adjacent to the driver substrate 10. Each electrical transfer component is connected to a corresponding conductive pad.

[0097] The first LED structure 2a is disposed on the driving substrate 10. The first LED structure 2a includes a first independent electrode 2a1 located at a side away from the driving substrate 10. The first independent electrode 2a1 is electrically connected to a conductive pad.

[0098] The wavelength of light emitted by the second LED structure 2b is smaller than the wavelength of light emitted by the first LED structure 2a. The second LED structure 2b is disposed on a side of the first LED structure 2a away from the driving substrate 10. The second LED structure 2b includes a second independent electrode 2b1 located on a side away from the first LED structure 2a. The second independent electrode 2b1 is electrically connected to another conductive pad.

[0099] The wavelength of light emitted by the third LED structure 2c is smaller than the wavelength of light emitted by the second LED structure 2b. The third LED structure 2c is disposed on a side of the second LED structure 2b away from the driver substrate 10. The third LED structure 2c includes a third independent electrode 2c1 located on a side away from the second LED structure 2b. The second independent electrode 2c1 is electrically connected to another conductive pad.

[0100] At least one of the first independent electrode 2a1, the second independent electrode 2b1, and the third independent electrode 2c1 is connected to an electrical switching component through a via hole. In a direction perpendicular to the surface of the display panel 100, the via hole and the electrical switching component are overlapped.

[0101] The display panel 100 of the embodiment of the present application reduces the depth of the via hole by setting an electrical transfer component between at least one of the first independent electrode 2a1, the second independent electrode 2b1 and the third independent electrode 2c1 and the corresponding conductive pad, thereby reducing the size of the via hole, thereby improving the resolution and reducing the risk of the independent electrode being easily broken in the via hole.

[0102] Alternatively, the driving substrate 10 may be a driving substrate having thin film transistors formed therein.

[0103] Optionally, the first LED structure 2a may be an inorganic light emitting diode structure configured to emit red light, the second LED structure 2b may be an inorganic light emitting diode structure configured to emit green light, and the third LED structure 2b may be an inorganic light emitting diode structure configured to emit blue light.

[0104] The colors of light emitted by the first LED structure 2a, the second LED structure 2b, and the third LED structure 2c can be adjusted according to actual needs.

[0105] Optionally, the material of the electrical transfer component may be metal or metal alloy, for example, at least one of copper, gold, silver, tin, nickel, gold-tin alloy and nickel-tin alloy.

[0106] This embodiment illustrates a pixel 20 having three electrical transfer components. In some embodiments, there can be one electrical transfer component, where one of the first independent electrode 2a1, the second independent electrode 2b1, and the third independent electrode 2c1 is connected to the electrical transfer component via a via. Alternatively, there can be two electrical transfer components, where each of the first independent electrode 2a1, the second independent electrode 2b1, and the third independent electrode 2c1 is connected to the electrical transfer component via a via.

[0107] Optionally, the display panel 100 further includes a first bonding layer f1 and a second bonding layer f2. Both the first bonding layer f1 and the second bonding layer f2 are made of insulating materials. The first bonding layer f1 is disposed on a surface of the driver substrate 10 proximate to the first LED structure 2a, and the second bonding layer f2 is disposed on a surface of the first LED structure 2a proximate to the driver substrate 10. The first bonding layer f1 and the second bonding layer f2 are bonded to each other.

[0108] The first LED structure 2a includes a first common electrode 2a2, a first conductive semiconductor layer 2a3, a first light emitting material layer 2a4, a second conductive semiconductor layer 2a5 and a first independent electrode 2a1 stacked in sequence on a side of the second bonding layer f2 away from the driving substrate 10.

[0109] The at least one electrical transfer component includes a first electrical transfer component 2d1. The plurality of conductive pads includes a first conductive pad 10a. The first bonding layer f1 defines a first hollow hole k1 exposing the first conductive pad 10a. The first electrical transfer component 2d1 is filled in the first hollow hole k1 and connected to the first conductive pad 10a.

[0110] The vias include a first via g1 formed in the first LED structure 2a. The first via g1 extends through the second conductive semiconductor layer 2a5, the first light-emitting material layer 2a4, the first conductive semiconductor layer 20a3, the first common electrode 2a2, and the second bonding layer f2. The first independent electrode 2a1 extends over the first via g1 and connects to the first electrical transition member 2d1.

[0111] In this embodiment, the first independent electrode 2a1 is extended into the first via hole g1 and connected to the first electrical conversion component 2d1. That is, the first independent electrode 2a1 is connected to the first conductive pad 10a of the driving substrate 10 through the first electrical conversion component 2d1, which reduces the depth of the first via hole g1, reduces the planar size of the first via hole g1, shortens the depth of the hole wall, shortens the portion of the first independent electrode 2a1 covering the hole wall of the first via hole g1, and reduces the risk of the first independent electrode 2a1 being easily broken at the first via hole g1.

[0112] Optionally, the display panel 100 further includes a third bonding layer f3 and a fourth bonding layer f4. Both the third bonding layer f3 and the fourth bonding layer f4 are made of insulating materials. The third bonding layer f3 is disposed on a surface of the first LED structure 2a that is adjacent to the second LED structure 2b. The fourth bonding layer f4 is disposed on a surface of the second LED structure 2b that is adjacent to the drive substrate 10. The third bonding layer f3 and the fourth bonding layer f4 are bonded to each other.

[0113] The second LED structure 2b includes a second common electrode 2b2, a third conductive semiconductor layer 2b3, a second light emitting material layer 2b4, a fourth conductive semiconductor layer 2b5 and a second independent electrode 2b1 which are sequentially stacked on a side of the fourth bonding layer f4 away from the driving substrate 10.

[0114] The plurality of conductive pads includes a second conductive pad 10b. At least one electrical transfer component includes a second electrical transfer component 2d2, which includes a first connecting portion d1 and a second connecting portion d2. The first bonding layer f1 defines a second hollow hole k2, exposing the second conductive pad 10b. The first connecting portion d1 fills the second hollow hole k2 and connects to the second conductive pad 10b. The first LED structure 2a defines a third hollow hole k3. The third hollow hole k3 extends through the third bonding layer f3, the second conductive semiconductor layer 2a5, the first light-emitting material layer 2a4, the first conductive semiconductor layer 2a3, the first common electrode 2a2, and the second bonding layer f2, exposing the first connecting portion d1. The second connecting portion d2 fills the third hollow hole k3 and connects to the first connecting portion d1.

[0115] The vias include a second via g2 defined in the second LED structure 2b. The second via g2 extends through the fourth conductive semiconductor layer 2b5, the second light-emitting material layer 2b4, the third conductive semiconductor layer 2b3, the second common electrode 2b2, and the fourth bonding layer f4. The second independent electrode 2b1 extends over the second via g2 and connects to the second connecting portion d2.

[0116] In this embodiment, the second independent electrode 2b1 extends into the second via hole g2 and is connected to the second connection portion d2 of the second electrical conversion component 2d2. That is, the second independent electrode 2b1 is connected to the second conductive pad 10b of the driving substrate 10 through the second electrical conversion component 2d2, thereby reducing the depth of the second via hole g2, reducing the planar size of the second via hole g2, shortening the depth of the hole wall, and shortening the portion of the second independent electrode 2b1 covering the hole wall of the second via hole g2, thereby reducing the risk of the second independent electrode 2b1 being easily broken at the second via hole g2.

[0117] Optionally, the display panel 100 further includes a fifth bonding layer f5 and a sixth bonding layer f6. Both the fifth bonding layer f5 and the sixth bonding layer f6 are made of insulating materials. The fifth bonding layer f5 is disposed on a surface of the second LED structure 2b that is adjacent to the third LED structure 2c. The sixth bonding layer f6 is disposed on a surface of the third LED structure 2c that is adjacent to the drive substrate 10. The fifth bonding layer f5 and the sixth bonding layer f6 are bonded to each other.

[0118] The third LED structure 2c includes a third common electrode 2c2, a fifth conductive semiconductor layer 2c3, a third light-emitting material layer 2c4, a sixth conductive semiconductor layer 2c5 and a third independent electrode 2c1, which are sequentially stacked on a side of the sixth bonding layer f6 away from the driving substrate 10.

[0119] The plurality of conductive pads include a third conductive pad 10c. At least one of the electrical transition components includes a third electrical transition component 2d3, which includes a third connecting portion d3, a fourth connecting portion d4, and a fifth connecting portion d5. The first bonding layer f1 defines a fourth hollow hole k4 that exposes the third conductive pad 10c. The third connecting portion d3 fills the fourth hollow hole k4 and connects to the third conductive pad 10c. The first LED structure 2a defines a fifth hollow hole k5 that passes through the third bonding layer f3, the second conductive semiconductor layer 2a5, the first light-emitting material layer 2a4, the first conductive semiconductor layer 2a3, the first common electrode 2a2, and the second bonding layer f2, exposing the third connecting portion d3. The fourth connecting portion d4 fills the fifth hollow hole k5 and connects to the third connecting portion d3. The second LED structure 2b has a sixth hollow hole k6 formed therein. The sixth hollow hole k6 penetrates the fifth bonding layer f5, the fourth conductive semiconductor layer 2b5, the second light-emitting material layer 2b4, the third conductive semiconductor layer 2b3, the second common electrode 2b2, and the fourth bonding layer f4, exposing the fourth connecting portion d4. The fifth connecting portion d5 fills the sixth hollow hole k6 and is connected to the fourth connecting portion d4.

[0120] The vias include a third via g3 defined in the third LED structure 2c. The third via g3 penetrates the sixth-conductivity-type semiconductor layer 2c5, the third light-emitting material layer 2c4, the fifth-conductivity-type semiconductor layer 2c3, the third common electrode 2c2, and the sixth bonding layer f6. The third independent electrode 2c1 extends over the third via g3 and connects to the fifth connecting portion d5.

[0121] In this embodiment, the third independent electrode 2c1 is extended into the third via hole g3 and connected to the third electrical conversion component 2d3. That is, the third independent electrode 2c1 is connected to the third conductive pad 10c of the driving substrate 10 through the third electrical conversion component 2d3, which reduces the depth of the third via hole g3, reduces the planar size of the third via hole g3, shortens the depth of the hole wall, and shortens the portion of the third independent electrode 2c1 covering the hole wall of the third via hole g3, thereby reducing the risk of the third independent electrode 2c1 being easily broken at the third via hole g3.

[0122] Optionally, the first bonding layer f1 to the sixth bonding layer f6 are all transparent organic layers or transparent inorganic layers. The organic layer may include at least one of SU8, poly (methyl methacrylate) (PMMA), polyimide, polyparaxylene, and benzocyclobutene (BCB). The inorganic layer may include Al2O3, SiO2, SiN x At least one of .

[0123] The materials of the first connecting portion d1 to the fifth connecting portion d5 are all metals or metal alloys, for example, at least one of copper, gold, silver, tin, nickel, gold-tin alloy, and nickel-tin alloy.

[0124] Optionally, in a direction perpendicular to the surface of the display panel 100 , the first via hole g1 is aligned with the first hollow hole k1 to save the digging area of ​​the first via hole g1 , thereby increasing the light emitting area of ​​the first LED structure 2 a and improving the resolution.

[0125] The second via hole g2 , the second hollow hole k2 and the third hollow hole k3 are aligned to save the digging area of ​​the second via hole g2 , thereby increasing the light emitting area of ​​the second LED structure 2 b and improving the resolution.

[0126] The third via hole g3 , the fourth hollow hole k4 , the fifth hollow hole k5 , and the sixth hollow hole k6 are aligned to save the digging area of ​​the third via hole g3 , thereby increasing the light emitting area of ​​the third LED structure 2 c and improving the resolution.

[0127] Optionally, the slope angles θ of the first to third via holes g1 to g3 and the first to sixth hollow holes k1 to k6 are all between 85 degrees and 90 degrees, for example, 85 degrees, 86 degrees, 87 degrees, 88 degrees, 89 degrees or 90 degrees.

[0128] In this embodiment, the slope angle θ is set between 85 degrees and 90 degrees, which can reduce the plane size of the via hole and the hollow hole and increase the effective light-emitting area.

[0129] Optionally, the widths of the first to third via holes g1 to g3 and the first to sixth hollow holes k1 to k6 are all less than or equal to 1 micron, for example, 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron.

[0130] In this embodiment, the width of the via holes and hollow holes is limited to 1 micron, so as to ensure that the LED structure has a larger light-emitting area, that is, to reduce the loss of the light-emitting area of ​​the LED structure.

[0131] Optionally, the first to third independent electrodes 2a1 to 2c1 and the first to third common electrodes 2a2 to 2c2 are all made of transparent conductive oxides, such as SnO2, InO2, ITO, ZnO, or IZO.

[0132] The first, third, and fifth conductive semiconductor layers 2a3, 2b3, and 2c3 are p-type semiconductor layers. The second, fourth, and sixth conductive semiconductor layers 2a5, 2b5, and 2c5 are n-type semiconductor layers. The first, second, and third light-emitting material layers 2a4, 2b4, and 2c4 can each have a multi-quantum well structure.

[0133] It is understood that in some embodiments, the first conductive type semiconductor layer 2a3, the third conductive type semiconductor layer 2b3, and the fifth conductive type semiconductor layer 2c3 may be n-type semiconductor layers, and the second conductive type semiconductor layer 2a5, the fourth conductive type semiconductor layer 2b5, and the sixth conductive type semiconductor layer 2c5 may be p-type semiconductor layers.

[0134] Optionally, the plurality of conducting pads further includes a fourth conducting pad 10d. The first common electrode 2a2, the second common electrode 2b2 and the third common electrode 2c2 are all electrically connected to the fourth conducting pad 10d.

[0135] The first bonding layer f1 defines a first opening v1, which is filled with a first conductive bonding portion s1. The first conductive bonding portion s1 is connected to the fourth conductive pad 10d. The second bonding layer f2 defines a second opening v2, which is filled with a second conductive bonding portion s2. The second conductive bonding portion s2 is connected to the first common electrode 2a2 and is bonded to the first conductive bonding portion s1.

[0136] The third bonding layer f3 defines a third opening v3, which extends through the first independent electrode 2a1, the second-conductivity-type semiconductor layer 2a5, the first light-emitting material layer 2a4, and the first-conductivity-type semiconductor layer 2a3. The third opening v3 is filled with a third conductive bonding portion s3. The third conductive bonding portion s3 is connected to the first common electrode 2a2. The fourth bonding layer f4 defines a fourth opening v4. The fourth opening v4 is filled with a fourth conductive bonding portion s4. The fourth conductive bonding portion s4 is connected to the second common electrode 2b2 and is bonded to the third conductive bonding portion s3.

[0137] A fifth opening v5 is defined in the fifth bonding layer f5, extending through the second independent electrode 2b1, the fourth-conductivity-type semiconductor layer 2b5, the second light-emitting material layer 2b4, and the third-conductivity-type semiconductor layer 2b3. A fifth conductive bonding portion s5 is formed within the fifth opening v5. The fifth conductive bonding portion s5 is connected to the second common electrode 2b2. A sixth opening v6 is defined in the sixth bonding layer f6. A sixth conductive bonding portion s6 is formed within the sixth opening v6. The sixth conductive bonding portion s6 is connected to the third common electrode 2c2 and bonded to the fifth conductive bonding portion s5.

[0138] In this embodiment, a conductive bonding portion is used to respectively connect the fourth conductive pad, the first common electrode 2a2, the second common electrode 2b2 and the third common electrode 2c2. The first common electrode 2a2 to the third common electrode 2c2 are all arranged flatly, avoiding the first common electrode 2a2 to the third common electrode 2c2 from being connected in a covering via manner, thereby improving the stability of the electrical connection.

[0139] In a direction perpendicular to the surface of the display panel 100 , the first opening v1 to the sixth opening v6 are aligned to save space on a horizontal plane, thereby improving resolution.

[0140] Referring to Figure 1 , in the direction from the driver substrate 10 toward the third LED structure 2c, the width of the first opening v1 increases, while the width of the second opening v2 decreases; the width of the third opening v3 increases, while the width of the fourth opening v4 decreases; the width of the fifth opening v5 increases, while the width of the sixth opening v6 decreases. In other words, the width of the first conductive bonding portion s1 increases, while the width of the second conductive bonding portion s2 decreases; the width of the third conductive bonding portion s3 increases, while the width of the fourth conductive bonding portion s4 decreases; and the width of the fifth conductive bonding portion s5 increases, while the width of the sixth conductive bonding portion s6 decreases.

[0141] That is to say, the first conductive bonding part s1 and the second conductive bonding part s2, the third conductive bonding part s3 and the fourth conductive bonding part s4, and the fifth conductive bonding part s5 and the sixth conductive bonding part s6 are all aligned and bonded using the wider end to improve the success rate and stability of bonding.

[0142] In addition, the width of the first opening v1 is slightly larger than that of the second opening v2, the width of the third opening v3 is slightly larger than that of the fourth opening v4, and the width of the fifth opening v5 is slightly larger than that of the sixth opening v6, so as to compensate for alignment errors and improve bonding accuracy and stability.

[0143] Optionally, a first insulating layer r1 is provided between the portion of the first independent electrode 2a1 extending into the first via hole g1 and the sidewall of the first via hole g1 to prevent the first independent electrode 2a1 from being short-circuited with the first LED structure 2a.

[0144] A second insulating layer r2 is disposed between the second connecting portion d2 and the sidewall of the third hollow hole k3 to prevent short circuits between the second connecting portion d2 and the first LED structure 2a. A third insulating layer r3 is disposed between the portion of the second independent electrode 2b1 extending into the second via g2 and the sidewall of the second via g2 to prevent short circuits between the second independent electrode 2b1 and the second LED structure 2b.

[0145] A fourth insulating layer r4 is also provided on the sidewalls of the fourth connecting portion d4 and the fifth hollow hole k5 to prevent short circuits between the fourth connecting portion d4 and the first LED structure 2a. A fifth insulating layer r5 is provided between the fifth connecting portion d5 and the sidewalls of the sixth hollow hole k6 to prevent short circuits between the fifth connecting portion d5 and the second LED structure 2b. A sixth insulating layer r6 is provided between the portion of the third independent electrode 2c1 extending into the third via g3 and the sidewalls of the third via g3 to prevent short circuits between the third independent electrode 2c1 and the third LED structure 2c.

[0146] A seventh insulating layer r7 is disposed between the third conductive bonding portion s3 and the sidewall of the third opening v3 to prevent short circuiting between the third conductive bonding portion s3 and the first LED structure 2a. An eighth insulating layer r8 is disposed between the fifth conductive bonding portion s5 and the sidewall of the fifth opening v5 to prevent short circuiting between the fifth conductive bonding portion s5 and the second LED structure 2b.

[0147] It can be understood that in some embodiments, one of the groups among the driving substrate 10 and the first LED structure 2a, the first LED structure 2a and the second LED structure 2b, and the second LED structure 2b and the third LED structure 2c is connected by bonding, and the other groups can be directly formed. For example, the first LED structure 2a is directly formed on the driving substrate 10, the third LED structure 2c is directly formed on the second LED structure 2b, and the second LED structure 2b is bonded to the first LED structure.

[0148] In some embodiments, two groups among the groups between the driving substrate 10 and the first LED structure 2a, between the first LED structure 2a and the second LED structure 2b, and between the second LED structure 2b and the third LED structure 2c are connected by bonding, and the other groups can be directly formed; for example, the first LED structure 2a is bonded to the driving substrate 10, the third LED structure 2c is directly formed on the second LED structure 2b, and the second LED structure 2b is bonded to the first LED structure 2a.

[0149] Optionally, the display panel 100 further includes a first Bragg reflector layer 2e1 and a second Bragg reflector layer 2e2. The first Bragg reflector layer 2e1 is disposed between the fourth bonding layer f4 and the second common electrode 2b2. A fourth opening v4 extends through the first Bragg reflector layer 2e1. The first Bragg reflector layer 2e1 is configured to reflect light emitted by the second LED structure 2b and transmit light emitted by the first LED structure 2a.

[0150] The second Bragg reflector 2e2 is disposed between the sixth bonding layer f6 and the third common electrode 2c2. A sixth opening v6 penetrates the second Bragg reflector 2e2. The second Bragg reflector 2e2 is configured to reflect light emitted by the third LED structure 2c and transmit light emitted by the first LED structure 2a and the second LED structure 2b.

[0151] In this way, the light generated from the first LED structure 2a can be emitted to the outside through the second LED structure 2b and the third LED structure 2c, and the light generated from the second LED structure 2b can be emitted to the outside through the third LED structure 2c. In addition, it is possible to prevent the light generated from the second LED structure 2b from being incident on the first LED structure 2a and being lost, or to prevent the light generated from the third LED structure 2c from being incident on the second LED structure 2a and being lost.

[0152] Among them, the Bragg reflection layer can be formed by alternately stacking high refractive index film layers and low refractive index film layers, and the refractive index and thickness of the film layers can be adjusted to reflect light of a specific wavelength.

[0153] Based on the above structure, with the same area, four groups of overlapping openings (vias, hollow holes, and openings) are provided in the first LED structure 2a, three groups of overlapping openings are provided in the second LED structure 2b, and two groups of overlapping openings are provided in the third LED structure 2c. Therefore, the light-emitting area of ​​the first LED structure 2a is smaller than the light-emitting area of ​​the second LED structure 2b, and the light-emitting area of ​​the second LED structure 2b is smaller than the light-emitting area of ​​the third LED structure 2c.

[0154] Since the first LED structure 2a emits red light, the second LED structure 2b emits green light, and the third LED structure 2c emits blue light; in a unit area, the brightness of blue light is the lowest and the brightness of red light is the highest, the first LED structure 2a is provided with the largest number of opening groups, and the third LED structure 2c is provided with the smallest number of opening groups to adjust the light-emitting areas of the three, thereby improving the uniformity of the light-emitting brightness of the display panel 100.

[0155] The anodes of the first, second, and third LED structures 2a, 2b, and 2c are electrically connected to a fourth conductive pad 10d, while the cathodes of the first, second, and third LED structures 2a, 2b, and 2c are electrically connected to different first, second, and third conductive pads 10a, 10b, and 10c, respectively. Therefore, the first to third LED structures 2a, 2b, and 2c can be driven independently.

[0156] The LED structures 2 a , 2 b , and 2 c may be disposed on the driving substrate 10 , and may be electrically connected to an internal circuit of the driving substrate 10 so as to be driven in an active matrix manner.

[0157] 2 , the pixel 20 has a first corner region j1, a second corner region j2, a third corner region j3, and a fourth corner region j4. In the orthographic projection pattern of the display panel 100, the first via hole g1 is disposed in the first corner region j1, the second via hole g2 is disposed in the second corner region j2, the third via hole g3 is disposed in the third corner region j3, and the first opening v1 is disposed in the fourth corner region j4.

[0158] The first via g1 is aligned with the first hollow hole k1 to form the first hole group. The second via g2, the second hollow hole k2, and the third hollow hole k3 are aligned to form the second hole group. The third via g3, the fourth hollow hole k4, the fifth hollow hole k5, and the sixth hollow hole k6 are aligned to form the third hole group. The first opening v1 to the sixth opening v6 are all aligned to form the fourth hole group. Therefore, the four hole groups are arranged in a one-to-one correspondence in a corner area of ​​the pixel 20, reducing the impact of the hole groups on the light emission of the first to third LED structures 2a, 2b, and 2c.

[0159] It should be noted that the manufacturing process of the display panel 100 of this embodiment includes the following steps:

[0160] Referring to FIG. 3 , step S1, a first bonding layer f1 is formed on the drive substrate 10 , and the first bonding layer f1 is patterned to form a first opening v1 , a first hollow hole k1 , a second hollow hole k2 , and a fourth hollow hole k4 . The first opening v1 exposes the fourth conductive pad (common anode) 10 d. The first hollow hole k1 exposes the first conductive pad (first cathode) 10a, the second hollow hole k2 exposes the second conductive pad (second cathode) 10b, and the fourth hollow hole k4 exposes the third conductive pad (third cathode) 10c; subsequently, a first metal layer is formed on the first bonding layer f1, the first metal layer covers the first bonding layer f1 and fills the first opening v1, the first hollow hole k1, the second hollow hole k2 and the fourth hollow hole k4; then, the first metal layer is ground to remove the first metal layer except the first opening v1, the first hollow hole k1, the second hollow hole k2 and the fourth hollow hole k4, to form a first conductive bonding portion s1, a first electrical transfer component 2d1, a first connecting portion d1 and a third connecting portion d3 flush with the first bonding layer f1.

[0161] Step S1 also includes: forming a second bonding layer f2 on a side of the first LED having the first backplane close to the driven substrate 10, patterning the second bonding layer f2 to form a second opening v2, and the second opening v2 exposing the first common electrode 2a2; then, forming a second metal layer on the second bonding layer f2, the second metal layer covering the second bonding layer f2 and filling the second opening v2; then, grinding the second metal layer, removing the second metal layer outside the second opening v2, and forming a second conductive bonding portion s2 flush with the second bonding layer f2.

[0162] Optionally, a chemical mechanical polishing (CMP) process is used for grinding. The first and second metal layers are ground using an over-grinding process. That is, in addition to grinding away the first metal layer on the upper surface of the first bonding layer f1 and the second metal layer on the lower surface of the second bonding layer f2, a small portion of the first bonding layer f1 and a small portion of the second bonding layer f2 are also ground away, thereby improving the bonding stability between the first bonding layer f1 and the second bonding layer f2 during subsequent bonding.

[0163] Step S1 also includes: bonding the first LED and the driving substrate 10 so that the first bonding layer f1 bonds to the second bonding layer f2 and the first conductive bonding portion s1 bonds to the second conductive bonding portion s2; then removing the first backplane to expose the second conductive semiconductor layer 2a5 of the first LED.

[0164] Optionally, the thickness of the first bonding layer f1 and the second bonding layer f2 after grinding is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1500 angstroms or 2000 angstroms, to achieve an auxiliary bonding process.

[0165] The thickness of the first metal layer and the second metal layer are both greater than 1000 angstroms, so that the first metal layer at least fills the first opening v1, the first hollow hole k1, the second hollow hole k2 and the fourth hollow hole k4, and the second metal layer at least fills the second opening v2.

[0166] The thickness of the first metal layer and the second metal layer can each be 1100 angstroms, 1200 angstroms, 1300 angstroms, 1400 angstroms, 1500 angstroms, 1600 angstroms, 1700 angstroms, 1800 angstroms, 1900 angstroms, or 2000 angstroms, etc.

[0167] The first opening v1, the second opening v2, the first hollow hole k1, the second hollow hole k2, and the fourth hollow hole k4 each have a size less than or equal to 1 micron, such as 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron, or 0.2 micron. Size refers to length and width. That is, the length and width of the aforementioned openings are both less than or equal to 1 micron to reduce the impact of the openings on the LED's light-emitting area.

[0168] The slope angle θ of each of the first opening v1 , the second opening v2 , the first hollow hole k1 , the second hollow hole k2 and the fourth hollow hole k4 is greater than or equal to 85 degrees and less than or equal to 90 degrees.

[0169] Please refer to Figure 4, step S2, the first LED is patterned to form a first via g1 exposing the first electrical transfer component 2d1; then, a first insulating layer r1 is formed on the hole wall of the first via g1 to expose the first electrical transfer component 2d1; then, a patterned first independent electrode 2a1 is formed on the first LED, and the first independent electrode 2a1 is connected to the first electrical transfer component 2d1 through the first via g1 to form a first LED structure 2a; then, a third bonding layer f3 is formed on the first independent electrode 2a1 to fill the first via g1 and cover the first independent electrode 2a1; then, the third bonding layer f3 is thinned using a CMP process.

[0170] Optionally, a size of the first via hole g1 is less than or equal to 1 micron, for example, 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron.

[0171] The thickness of the first independent electrode 2a1 and the first common electrode 2a2 is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1100 angstroms, 1200 angstroms, 1300 angstroms, 1400 angstroms, 1500 angstroms, 1600 angstroms, 1700 angstroms, 1800 angstroms, 1900 angstroms, or 2000 angstroms. This configuration ensures the electrical conductivity of the first independent electrode 2a1 and the second common electrode 2a2.

[0172] The thickness of the thinned third bonding layer f3 (not the thickness at the first via g1) is greater than or equal to 3000 angstroms, for example, 3000 angstroms, 3100 angstroms, 3200 angstroms, 3300 angstroms, 3400 angstroms, 3500 angstroms, 3600 angstroms, 3700 angstroms, 3800 angstroms, 3900 angstroms, 4000 angstroms, 4500 angstroms, or 5000 angstroms. The thickness of the thinned third bonding layer f3 is greater than or equal to 3000 angstroms to ensure that the third bonding layer f3 has a minimum bonding thickness after the subsequent grinding step.

[0173] Please refer to Figure 5, step S3, patterning the third bonding layer f3 to form a third opening v3, a third hollow hole k3 and a fifth hollow hole k5, the third opening v3 exposes the first common electrode 2a2, the third hollow hole k3 exposes the first connection portion d1, and the fifth hollow hole k5 exposes the third connection portion d3; forming a seventh insulating layer r7 on the side wall of the third opening v3, forming a second insulating layer r2 on the side wall of the third hollow hole k3, and forming a fourth insulating layer r4 on the side wall of the fifth hollow hole k5; then, forming a third metal layer on the third bonding layer f3, the third metal layer at least filling the third opening v3, the third hollow hole k3 and the fifth hollow hole k5 and covering the third bonding layer f3; then, grinding and removing the third metal layer, removing the third metal layer outside the third opening v3, the third hollow hole k3 and the fifth hollow hole k5, to form a third conductive bonding portion s3, the second connection portion d2 and the fourth connection portion d4 flush with the third bonding layer f3.

[0174] Optionally, a chemical mechanical polishing (CMP) process is used for polishing. The third metal layer is polished by over-polishing. That is, in addition to polishing away the third metal layer on the upper surface of the third bonding layer f3, a small portion of the third bonding layer f3 is also polished away to improve the stability of subsequent bonding.

[0175] The size of each of the third opening v3, the third hollow hole k3 and the fifth hollow hole k5 is less than or equal to 1 micron, for example, 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron.

[0176] The slope angle of each of the third opening v3, the third hollow hole k3 and the fifth hollow hole k5 is greater than or equal to 85 degrees and less than or equal to 90 degrees.

[0177] The thickness of the third bonding layer f3 after grinding is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1500 angstroms or 2000 angstroms, to achieve an auxiliary bonding process.

[0178] Please refer to Figure 6, step S4, a first Bragg reflection layer 2e1 and a fourth bonding layer f4 are sequentially formed on a side of the second LED having a second backplane close to the driven substrate 10, and the fourth bonding layer f4 is patterned to form a fourth opening v4, which exposes the second common electrode 2b2; then, a fourth metal layer is formed on the fourth bonding layer f4, covering the fourth bonding layer f4 and filling the fourth opening v4; then, the fourth metal layer is ground to remove the fourth metal layer outside the fourth opening v4, thereby forming a fourth conductive bonding portion s4 flush with the fourth bonding layer f4.

[0179] Step S4 also includes: bonding the second LED and the first LED structure 2a so that the third bonding layer f3 bonds to the fourth bonding layer f4 and the third conductive bonding portion s3 bonds to the fourth conductive bonding portion s4; then removing the second backplane to expose the fourth conductive semiconductor layer 2b5 of the second LED.

[0180] Optionally, the thickness of the fourth bonding layer f4 after grinding is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1500 angstroms or 2000 angstroms, to achieve an auxiliary bonding process.

[0181] The thickness of the fourth metal layer is greater than the depth of the fourth opening v4.

[0182] The fourth opening v4 has a size less than or equal to 1 micron, such as 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron. The fourth opening v4 has a slope angle greater than or equal to 85 degrees and less than or equal to 90 degrees.

[0183] Please refer to Figure 7, step S5, the second LED is patterned to form a second via hole g2 exposing the second connection part d2; then, a third insulating layer r3 exposing the second connection part d2 is formed on the hole wall of the second via hole g2; then, a patterned second independent electrode 2b1 is formed on the second LED, and the second independent electrode 2b1 is connected to the second connection part d2 through the second via hole g2 to form a second LED structure 2b; then, a fifth bonding layer f5 filling the second via hole g2 and covering the second independent electrode 2b1 is formed on the second independent electrode 2b1; then, the fifth bonding layer f5 is thinned using a CMP process.

[0184] Optionally, the size of the second via hole g2 is less than or equal to 1 micron, for example, it may be 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron.

[0185] The thickness of the second common electrode 2b2 and the second independent electrode 2b1 is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1100 angstroms, 1200 angstroms, 1300 angstroms, 1400 angstroms, 1500 angstroms, 1600 angstroms, 1700 angstroms, 1800 angstroms, 1900 angstroms, or 2000 angstroms, etc. This configuration ensures the conductivity of the second common electrode 2b2 and the second independent electrode 2b1.

[0186] The thickness of the thinned fifth bonding layer f5 (not the thickness at the second via hole g2) is greater than or equal to 3000 angstroms, for example, 3000 angstroms, 3100 angstroms, 3200 angstroms, 3300 angstroms, 3400 angstroms, 3500 angstroms, 3600 angstroms, 3700 angstroms, 3800 angstroms, 3900 angstroms, 4000 angstroms, 4500 angstroms, or 5000 angstroms. The thickness of the thinned fifth bonding layer f5 is greater than or equal to 3000 angstroms to ensure that the fifth bonding layer f5 has a minimum bonding thickness after the subsequent grinding step.

[0187] Please refer to Figure 8, step S6, pattern the fifth bonding layer f5 to form a fifth opening v5 and a sixth hollow hole k6, the fifth opening v5 exposes the second common electrode 2b2, and the sixth hollow hole k6 exposes the fourth connection portion d4; an eighth insulating layer r8 is formed on the side wall of the fifth opening v5; then, a fifth metal layer is formed on the fifth bonding layer f5, and the fifth metal layer at least fills the fifth opening v5 and the sixth hollow hole k6 and covers the fifth bonding layer f5; then, the fifth metal layer is ground and removed, and the fifth metal layer outside the fifth opening v5 and the sixth hollow hole k6 is removed to form a fifth conductive bonding portion s5 and a fifth electrical connection portion d5 flush with the fifth bonding layer f5.

[0188] Optionally, a chemical mechanical polishing (CMP) process is used for polishing. The fifth metal layer is polished by over-polishing. That is, in addition to polishing away the fifth metal layer on the upper surface of the fifth bonding layer f5, a small portion of the fifth bonding layer f5 is also polished away to improve the stability of subsequent bonding.

[0189] The size of each of the fifth opening v5 and the sixth hollow hole k6 is less than or equal to 1 micron, for example, 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron.

[0190] The slope angle of each of the fifth opening v5 and the sixth hollow hole k6 is greater than or equal to 85 degrees and less than or equal to 90 degrees.

[0191] The thickness of the fifth bonding layer f5 after grinding is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1500 angstroms or 2000 angstroms, to achieve an auxiliary bonding process.

[0192] Please refer to Figure 9, step S7, a second Bragg reflection layer 2e2 and a sixth bonding layer f6 are sequentially formed on a side of the third LED having a third backplane close to the driven substrate 10, and the sixth bonding layer f6 is patterned to form a sixth opening v6, which exposes the third common electrode 2c2; then, a sixth metal layer is formed on the sixth bonding layer f6, covering the sixth bonding layer f6 and filling the sixth opening v6; then, the sixth metal layer is ground to remove the sixth metal layer outside the sixth opening v6 to form a sixth conductive bonding portion s6 flush with the sixth bonding layer f6.

[0193] Step S7 also includes: bonding the third LED and the second LED structure 2b so that the fifth bonding layer f5 is bonded to the sixth bonding layer f6, and the fifth conductive bonding part s5 is bonded to the sixth conductive bonding part s6; then removing the third backplane to expose the sixth conductive semiconductor layer 2c5 of the third LED.

[0194] Optionally, the thickness of the sixth bonding layer f6 after grinding is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1500 angstroms or 2000 angstroms, to achieve an auxiliary bonding process.

[0195] The thickness of the sixth metal layer is greater than the depth of the sixth opening v6.

[0196] The size of the sixth opening v6 is less than or equal to 1 micron, for example, 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron. The slope angle of the sixth opening v6 is greater than or equal to 85 degrees and less than or equal to 90 degrees.

[0197] Please refer to Figure 10, step S8, pattern the third LED to form a third via g3 exposing the fifth connection portion d5; then, form a sixth insulating layer r6 exposing the fifth connection portion d5 on the hole wall of the third via g3; then, form a patterned third independent electrode 2c1 on the third LED, and the third independent electrode 2c1 is connected to the fifth connection portion d5 through the third via g3 to form a third LED structure 2c.

[0198] Optionally, step S8 further includes: filling the third via hole g3 with a protection layer r9 so that the protection layer r9 is flush with the third independent electrode 2c1. The material of the protection layer r9 is an insulating material.

[0199] The first LED structure 2 a , the second LED structure 2 b and the third LED structure 2 c are stacked to form a pixel 20 .

[0200] Optionally, a size of the third via hole g3 is less than or equal to 1 micron, for example, 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron.

[0201] The thickness of the third common electrode 2c2 and the third independent electrode 2c1 is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1100 angstroms, 1200 angstroms, 1300 angstroms, 1400 angstroms, 1500 angstroms, 1600 angstroms, 1700 angstroms, 1800 angstroms, 1900 angstroms, or 2000 angstroms. This configuration ensures the electrical conductivity of the third common electrode 2c2 and the third independent electrode 2c1.

[0202] 11 , an embodiment of the present application provides another display panel 100 , which includes a driving substrate 10 and a plurality of pixels 20 . The plurality of pixels 20 are disposed on the driving substrate 10 .

[0203] The driver substrate 10 includes a plurality of spaced conductive pads. The pixel 20 includes a first LED structure 2a, a second LED structure 2b, and a third LED structure 2c arranged in a stacked manner. The pixel 20 also includes at least one electrical transfer component. The at least one electrical transfer component is disposed on a side of the third LED structure 2c that is adjacent to the driver substrate 10. Each electrical transfer component is connected to a corresponding conductive pad.

[0204] The first LED structure 2a is disposed on the driving substrate 10. The first LED structure 2a includes a first independent electrode 2a1 located at a side away from the driving substrate 10. The first independent electrode 2a1 is electrically connected to a conductive pad.

[0205] The wavelength of light emitted by the second LED structure 2b is smaller than the wavelength of light emitted by the first LED structure 2a. The second LED structure 2b is disposed on a side of the first LED structure 2a away from the driving substrate 10. The second LED structure 2b includes a second independent electrode 2b1 located on a side away from the first LED structure 2a. The second independent electrode 2b1 is electrically connected to another conductive pad.

[0206] The wavelength of light emitted by the third LED structure 2c is smaller than the wavelength of light emitted by the second LED structure 2b. The third LED structure 2c is disposed on a side of the second LED structure 2b away from the driver substrate 10. The third LED structure 2c includes a third independent electrode 2c1 located on a side away from the second LED structure 2b. The second independent electrode 2c1 is electrically connected to another conductive pad.

[0207] At least one of the first independent electrode 2a1, the second independent electrode 2b1, and the third independent electrode 2c1 is connected to an electrical switching component through a via hole. In a direction perpendicular to the surface of the display panel 100, the via hole and the electrical switching component are overlapped.

[0208] The display panel 100 of the embodiment of the present application reduces the depth of the via hole by setting an electrical transfer component between at least one of the first independent electrode 2a1, the second independent electrode 2b1 and the third independent electrode 2c1 and the corresponding conductive pad, thereby reducing the size of the via hole, thereby improving the resolution and reducing the risk of the independent electrode being easily broken in the via hole.

[0209] Alternatively, the driving substrate 10 may be a driving substrate having thin film transistors formed therein.

[0210] Optionally, the first LED structure 2a may be an inorganic light emitting diode structure configured to emit red light, the second LED structure 2b may be an inorganic light emitting diode structure configured to emit green light, and the third LED structure 2b may be an inorganic light emitting diode structure configured to emit blue light.

[0211] The colors of light emitted by the first LED structure 2a, the second LED structure 2b, and the third LED structure 2c can be adjusted according to actual needs.

[0212] Optionally, the material of the electrical transfer component may be metal or metal alloy, for example, at least one of copper, gold, silver, tin, nickel, gold-tin alloy and nickel-tin alloy.

[0213] This embodiment illustrates a pixel 20 having two electrical transfer components. In some embodiments, there can be one electrical transfer component, where one of the first independent electrode 2a1, the second independent electrode 2b1, and the third independent electrode 2c1 is connected to the electrical transfer component via a via. Alternatively, there can be two electrical transfer components, where each of the first independent electrode 2a1, the second independent electrode 2b1, and the third independent electrode 2c1 is connected to the electrical transfer component via a via.

[0214] Optionally, the display panel 100 further includes a first bonding layer f1 and a second bonding layer f2. Both the first bonding layer f1 and the second bonding layer f2 are made of metal. The first bonding layer f1 is disposed on a surface of the driver substrate 10 proximate to the first LED structure 2a, and the second bonding layer f2 is disposed on a surface of the first LED structure 2a proximate to the driver substrate 10. The first bonding layer f1 and the second bonding layer f2 are bonded to each other.

[0215] The first LED structure 2a includes a first common electrode 2a2, a first conductive semiconductor layer 2a3, a first light emitting material layer 2a4, a second conductive semiconductor layer 2a5 and a first independent electrode 2a1 stacked in sequence on a side of the second bonding layer f2 away from the driving substrate 10.

[0216] The plurality of conductive pads includes a first conductive pad 10a. The via includes a first via g1 formed in the first LED structure 2a. The first via g1 penetrates the second-conductivity-type semiconductor layer 2a5, the first light-emitting material layer 2a4, the first-conductivity-type semiconductor layer 20a3, the first common electrode 2a2, the second bonding layer f2, and the first bonding layer f1, exposing the first conductive pad 10a. The first independent electrode 2a1 extends over the first via g1 and connects to the first conductive pad 10a.

[0217] Optionally, the display panel 100 further includes a third bonding layer f3 and a fourth bonding layer f4. Both the third bonding layer f3 and the fourth bonding layer f4 are made of insulating materials. The third bonding layer f3 is disposed on a surface of the first LED structure 2a that is adjacent to the second LED structure 2b. The fourth bonding layer f4 is disposed on a surface of the second LED structure 2b that is adjacent to the drive substrate 10. The third bonding layer f3 and the fourth bonding layer f4 are bonded to each other.

[0218] The second LED structure 2b includes a second common electrode 2b2, a third conductive semiconductor layer 2b3, a second light emitting material layer 2b4, a fourth conductive semiconductor layer 2b5 and a second independent electrode 2b1 which are sequentially stacked on a side of the fourth bonding layer f4 away from the driving substrate 10.

[0219] The plurality of conductive pads includes a second conductive pad 10b. The at least one electrical transfer component includes a first electrical transfer component 2d1. The first LED structure 2a defines a first hollow hole k1. The first hollow hole k1 penetrates the third bonding layer f3, the second conductive semiconductor layer 2a5, the first light-emitting material layer 2a4, the first conductive semiconductor layer 2a3, the first common electrode 2a2, the second bonding layer f2, and the first bonding layer f1, exposing the second conductive pad 10b. The first electrical transfer component 2d1 fills the first hollow hole k1 and connects to the second conductive pad 10b.

[0220] The vias include a second via g2 defined in the second LED structure 2b. The second via g2 extends through the fourth conductive semiconductor layer 2b5, the second light-emitting material layer 2b4, the third conductive semiconductor layer 2b3, the second common electrode 2b2, and the fourth bonding layer f4. The second independent electrode 2b1 extends over the second via g2 and connects to the first electrical transition member 2d1.

[0221] In this embodiment, the second independent electrode 2b1 is extended into the second via hole g2 and connected to the first electrical conversion component 2d1. That is, the second independent electrode 2b1 is connected to the second conductive pad 10b of the driving substrate 10 through the first electrical conversion component 2d1, which reduces the depth of the second via hole g2, reduces the planar size of the second via hole g2, shortens the depth of the hole wall, shortens the portion of the second independent electrode 2b1 covering the hole wall of the second via hole g2, and reduces the risk of the second independent electrode 2b1 being easily broken at the second via hole g2.

[0222] Optionally, the display panel 100 further includes a fifth bonding layer f5 and a sixth bonding layer f6. Both the fifth bonding layer f5 and the sixth bonding layer f6 are made of insulating materials. The fifth bonding layer f5 is disposed on a surface of the second LED structure 2b that is adjacent to the third LED structure 2c. The sixth bonding layer f6 is disposed on a surface of the third LED structure 2c that is adjacent to the drive substrate 10. The fifth bonding layer f5 and the sixth bonding layer f6 are bonded to each other.

[0223] The third LED structure 2c includes a third common electrode 2c2, a fifth conductive semiconductor layer 2c3, a third light-emitting material layer 2c4, a sixth conductive semiconductor layer 2c5 and a third independent electrode 2c1, which are sequentially stacked on a side of the sixth bonding layer f6 away from the driving substrate 10.

[0224] The plurality of conductive pads include a third conductive pad 10c. At least one of the electrical transition components includes a second electrical transition component 2d2, which includes a first connecting portion d1 and a second connecting portion d2. The first LED structure 2a has a second hollow hole k2 extending through the third bonding layer f3, the second conductive semiconductor layer 2a5, the first luminescent material layer 2a4, the first conductive semiconductor layer 2a3, the first common electrode 2a2, the second bonding layer f2, and the first bonding layer f1, exposing the third conductive pad 10c. The first connecting portion d1 fills the second hollow hole k2 and connects to the third conductive pad 10c. The second LED structure 2b has a third hollow hole k3 extending through the fifth bonding layer f5, the fourth conductive semiconductor layer 2b5, the second luminescent material layer 2b4, the third conductive semiconductor layer 2b3, the second common electrode 2b2, and the fourth bonding layer f4, exposing the first connecting portion d1. The second connection portion d2 is filled in the third hollow hole k3 and connected to the first connection portion d1 .

[0225] The vias include a third via g3 defined in the third LED structure 2c. The third via g3 penetrates the sixth-conductivity-type semiconductor layer 2c5, the third light-emitting material layer 2c4, the fifth-conductivity-type semiconductor layer 2c3, the third common electrode 2c2, and the sixth bonding layer f6. The third independent electrode 2c1 extends over the third via g3 and connects to the second connecting portion d2.

[0226] In this embodiment, the third independent electrode 2c1 is extended into the third via hole g3 and connected to the second electrical conversion component 2d2. That is, the third independent electrode 2c1 is connected to the third conductive pad 10c of the driving substrate 10 through the second electrical conversion component 2d2, which reduces the depth of the third via hole g3, reduces the planar size of the third via hole g3, shortens the depth of the hole wall, shortens the portion of the third independent electrode 2c1 covering the hole wall of the third via hole g3, and reduces the risk of the third independent electrode 2c1 being easily broken at the third via hole g3.

[0227] Optionally, the third bonding layer f3 to the sixth bonding layer f6 are all transparent organic layers or transparent inorganic layers. The organic layer may include at least one of SU8, poly (methyl methacrylate) (PMMA), polyimide, polyparaxylene, and benzocyclobutene (BCB). The inorganic layer may include Al2O3, SiO2, SiN x At least one of .

[0228] The first bonding layer f1, the second bonding layer f2, the first electrical transfer member 2d1, the first connecting portion d1 and the second connecting portion d2 are all made of metal or metal alloy, such as at least one of copper, gold, silver, tin, nickel, gold-tin alloy and nickel-tin alloy.

[0229] Optionally, in a direction perpendicular to the surface of the display panel 100 , the second via hole g2 is aligned with the first hollow hole k1 to save the digging area of ​​the second via hole g2 , thereby increasing the light emitting area of ​​the second LED structure 2 b and improving the resolution.

[0230] The third via hole g3 , the second hollow hole k2 and the third hollow hole k3 are aligned to save the digging area of ​​the third via hole g3 , thereby increasing the light-emitting area of ​​the third LED structure 2 c and improving the resolution.

[0231] Optionally, the slope angles θ of the first to third via holes g1 to g3 and the first to third hollow holes k1 to k3 are all between 85 degrees and 90 degrees, such as 85 degrees, 86 degrees, 87 degrees, 88 degrees, 89 degrees or 90 degrees.

[0232] In this embodiment, the slope angle θ is set between 85 degrees and 90 degrees, which can reduce the plane size of the via hole and the hollow hole and increase the effective light-emitting area.

[0233] Optionally, the widths of the first to third via holes g1 to g3 and the first to third hollow holes k1 to k3 are all less than or equal to 1 micron, for example, 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron.

[0234] In this embodiment, the width of the via holes and hollow holes is limited to 1 micron, so as to ensure that the LED structure has a larger light-emitting area, that is, to reduce the loss of the light-emitting area of ​​the LED structure.

[0235] Optionally, the first to third independent electrodes 2a1 to 2c1 and the first to third common electrodes 2a2 to 2c2 are all made of transparent conductive oxides, such as SnO2, InO2, ITO, ZnO, or IZO.

[0236] The first, third, and fifth conductive semiconductor layers 2a3, 2b3, and 2c3 are p-type semiconductor layers. The second, fourth, and sixth conductive semiconductor layers 2a5, 2b5, and 2c5 are n-type semiconductor layers. The first, second, and third light-emitting material layers 2a4, 2b4, and 2c4 can each have a multi-quantum well structure.

[0237] It is understood that in some embodiments, the first conductive type semiconductor layer 2a3, the third conductive type semiconductor layer 2b3, and the fifth conductive type semiconductor layer 2c3 may be n-type semiconductor layers, and the second conductive type semiconductor layer 2a5, the fourth conductive type semiconductor layer 2b5, and the sixth conductive type semiconductor layer 2c5 may be p-type semiconductor layers.

[0238] Optionally, the plurality of conductive pads further include a fourth conductive pad 10d. The first common electrode 2a2, the second common electrode 2b2, the third common electrode 2c2 and the second bonding layer f2 are all electrically connected to the fourth conductive pad 10d. The first bonding layer f1 is connected to the fourth conductive pad 10d.

[0239] The third bonding layer f3 defines a first opening v1, which extends through the first independent electrode 2a1, the second-conductivity-type semiconductor layer 2a5, the first light-emitting material layer 2a4, the first-conductivity-type semiconductor layer 2a3, and the first common electrode 2a2. The first opening v1 is filled with a first conductive bonding portion s1. The first conductive bonding portion s1 is connected to the second bonding layer f2. The fourth bonding layer f4 defines a second opening v2. The second opening v2 is filled with a second conductive bonding portion s2. The second conductive bonding portion s2 is connected to the second common electrode 2b2 and is bonded to the first conductive bonding portion s1.

[0240] The fifth bonding layer f5 defines a third opening v3, which extends through the second independent electrode 2b1, the fourth-conductivity-type semiconductor layer 2b5, the second light-emitting material layer 2b4, and the third-conductivity-type semiconductor layer 2b3. The third opening v3 is filled with a third conductive bonding portion s3. The third conductive bonding portion s3 is connected to the second common electrode 2b2. The sixth bonding layer f6 defines a fourth opening v4. The fourth opening v4 is filled with a fourth conductive bonding portion s4. The fourth conductive bonding portion s4 is connected to the third common electrode 2c2 and is bonded to the third conductive bonding portion s3.

[0241] In this embodiment, conductive bonding portions are used to connect the first common electrode 2a2, the second common electrode 2b2, and the third common electrode 2c2, respectively. The first common electrode 2a2 to the third common electrode 2c2 are all arranged flatly, avoiding the first common electrode 2a2 to the third common electrode 2c2 from being connected in a covering via manner, thereby improving the stability of the electrical connection.

[0242] Optionally, in a direction perpendicular to the surface of the display panel 100 , the first opening v1 to the fourth opening v4 are aligned to save space on a horizontal plane, thereby improving resolution.

[0243] Referring to Figure 11 , from the driver substrate 10 toward the third LED structure 2c, the width of the first opening v1 increases, while the width of the second opening v2 decreases; the width of the third opening v3 increases, while the width of the fourth opening v4 decreases. In other words, the width of the first conductive bonding portion s1 increases, while the width of the second conductive bonding portion s2 decreases; the width of the third conductive bonding portion s3 increases, while the width of the fourth conductive bonding portion s4 decreases.

[0244] That is, the first conductive bonding portion s1 and the second conductive bonding portion s2 , as well as the third conductive bonding portion s3 and the fourth conductive bonding portion s4 , are aligned and bonded using the wider end, thereby improving the success rate and stability of bonding.

[0245] In addition, the width of the first opening v1 is slightly larger than that of the second opening v2 , and the width of the third opening v3 is slightly larger than that of the fourth opening v4 , so as to compensate for alignment errors and improve bonding accuracy and stability.

[0246] Optionally, a first insulating layer r1 is provided between the portion of the first independent electrode 2a1 extending into the first via hole g1 and the sidewall of the first via hole g1 to prevent the first independent electrode 2a1 from being short-circuited with the first LED structure 2a.

[0247] A second insulating layer r2 is disposed between the first electrical adapter 2d1 and the sidewall of the first hollow hole k1 to prevent short circuits between the first electrical adapter 2d1 and the first LED structure 2a. A third insulating layer r3 is disposed between the portion of the second independent electrode 2b1 extending into the second via g2 and the sidewall of the second via g2 to prevent short circuits between the second independent electrode 2b1 and the second LED structure 2b.

[0248] A fourth insulating layer r4 is also provided between the first connecting portion d1 and the sidewalls of the second hollow hole k2 to prevent short circuits between the first connecting portion d1 and the first LED structure 2a. A fifth insulating layer r5 is provided between the second connecting portion d2 and the sidewalls of the third hollow hole k3 to prevent short circuits between the second connecting portion d2 and the second LED structure 2b. A sixth insulating layer r6 is provided between the portion of the third independent electrode 2c1 extending into the third via g3 and the sidewalls of the third via g3 to prevent short circuits between the third independent electrode 2c1 and the third LED structure 2c.

[0249] A seventh insulating layer r7 is disposed between the first conductive bonding portion s1 and the sidewall of the first opening v1 to prevent short circuits between the first conductive bonding portion s1 and the first LED structure 2a. An eighth insulating layer r8 is disposed between the third conductive bonding portion s3 and the sidewall of the third opening v3 to prevent short circuits between the third conductive bonding portion s3 and the second LED structure 2b.

[0250] It can be understood that in some embodiments, one of the groups among the driving substrate 10 and the first LED structure 2a, the first LED structure 2a and the second LED structure 2b, and the second LED structure 2b and the third LED structure 2c is connected by bonding, and the other groups can be directly formed. For example, the first LED structure 2a is directly formed on the driving substrate 10, the third LED structure 2c is directly formed on the second LED structure 2b, and the second LED structure 2b is bonded to the first LED structure.

[0251] In some embodiments, two groups among the groups between the driving substrate 10 and the first LED structure 2a, between the first LED structure 2a and the second LED structure 2b, and between the second LED structure 2b and the third LED structure 2c are connected by bonding, and the other groups can be directly formed; for example, the first LED structure 2a is bonded to the driving substrate 10, the third LED structure 2c is directly formed on the second LED structure 2b, and the second LED structure 2b is bonded to the first LED structure 2a.

[0252] Optionally, the display panel 100 further includes a first Bragg reflector layer 2e1 and a second Bragg reflector layer 2e2. The first Bragg reflector layer 2e1 is disposed between the fourth bonding layer f4 and the second common electrode 2b2. The second opening v2 extends through the first Bragg reflector layer 2e1. The first Bragg reflector layer 2e1 is configured to reflect light emitted by the second LED structure 2b and transmit light emitted by the first LED structure 2a.

[0253] The second Bragg reflector 2e2 is disposed between the sixth bonding layer f6 and the third common electrode 2c2. A fourth opening v4 extends through the second Bragg reflector 2e2. The second Bragg reflector 2e2 is configured to reflect light emitted by the third LED structure 2c and transmit light emitted by the first LED structure 2a and the second LED structure 2b.

[0254] In this way, the light generated from the first LED structure 2a can be emitted to the outside through the second LED structure 2b and the third LED structure 2c, and the light generated from the second LED structure 2b can be emitted to the outside through the third LED structure 2c. In addition, it is possible to prevent the light generated from the second LED structure 2b from being incident on the first LED structure 2a and being lost, or to prevent the light generated from the third LED structure 2c from being incident on the second LED structure 2a and being lost.

[0255] Among them, the Bragg reflection layer can be formed by alternately stacking high refractive index film layers and low refractive index film layers, and the refractive index and thickness of the film layers can be adjusted to reflect light of a specific wavelength.

[0256] Based on the above structure, with the same area, four groups of overlapping openings (vias, hollow holes, and openings) are provided in the first LED structure 2a, three groups of overlapping openings are provided in the second LED structure 2b, and two groups of overlapping openings are provided in the third LED structure 2c. Therefore, the light-emitting area of ​​the first LED structure 2a is smaller than the light-emitting area of ​​the second LED structure 2b, and the light-emitting area of ​​the second LED structure 2b is smaller than the light-emitting area of ​​the third LED structure 2c.

[0257] Since the first LED structure 2a emits red light, the second LED structure 2b emits green light, and the third LED structure 2c emits blue light; in a unit area, the brightness of blue light is the lowest and the brightness of red light is the highest, the first LED structure 2a is provided with the largest number of opening groups, and the third LED structure 2c is provided with the smallest number of opening groups to adjust the light-emitting areas of the three, thereby improving the uniformity of the light-emitting brightness of the display panel 100.

[0258] In the orthographic projection pattern of the pixel 20 in this embodiment, the four groups of overlapping openings of the pixel 20 are respectively arranged in four corner areas of the pixel 20 in a one-to-one correspondence.

[0259] The anodes of the first, second, and third LED structures 2a, 2b, and 2c are electrically connected to a fourth conductive pad 10d, while the cathodes of the first, second, and third LED structures 2a, 2b, and 2c are electrically connected to different first, second, and third conductive pads 10a, 10b, and 10c, respectively. Therefore, the first to third LED structures 2a, 2b, and 2c can be driven independently.

[0260] The LED structures 2 a , 2 b , and 2 c may be disposed on the driving substrate 10 , and may be electrically connected to an internal circuit of the driving substrate 10 so as to be driven in an active matrix manner.

[0261] It should be noted that the manufacturing process of the display panel 100 of this embodiment includes the following steps:

[0262] Please refer to Figure 12, step S1, forming a first bonding layer f1 on the driving substrate 10; forming a second bonding layer f2 on a side of the first LED having a first backplane close to the driven substrate 10; bonding the first LED and the driving substrate 10 so that the first bonding layer f1 bonds to the second bonding layer f2; then removing the first backplane to expose the second conductive semiconductor layer 2a5 of the first LED.

[0263] Please refer to Figure 13, step S2, pattern the first LED to form a first via hole g1 exposing the first conductive pad 10a; then, form a first insulating layer r1 exposing the first conductive pad 10a on the hole wall of the first via hole g1; then, form a patterned first independent electrode 2a1 on the first LED, and the first independent electrode 2a1 is connected to the first conductive pad 10a through the first via hole g1 to form a first LED structure 2a; then, form a third bonding layer f3 on the first independent electrode 2a1 to fill the first via hole g1 and cover the first independent electrode 2a1; then, use a CMP process to thin the third bonding layer f3.

[0264] Optionally, a size of the first via hole g1 is less than or equal to 1 micron, for example, 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron.

[0265] The thickness of the first independent electrode 2a1 and the first common electrode 2a2 is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1100 angstroms, 1200 angstroms, 1300 angstroms, 1400 angstroms, 1500 angstroms, 1600 angstroms, 1700 angstroms, 1800 angstroms, 1900 angstroms, or 2000 angstroms. This configuration ensures the electrical conductivity of the first independent electrode 2a1 and the second common electrode 2a2.

[0266] The thickness of the thinned third bonding layer f3 (not the thickness at the first via g1) is greater than or equal to 3000 angstroms, for example, 3000 angstroms, 3100 angstroms, 3200 angstroms, 3300 angstroms, 3400 angstroms, 3500 angstroms, 3600 angstroms, 3700 angstroms, 3800 angstroms, 3900 angstroms, 4000 angstroms, 4500 angstroms, or 5000 angstroms. The thickness of the thinned third bonding layer f3 is greater than or equal to 3000 angstroms to ensure that the third bonding layer f3 has a minimum bonding thickness after the subsequent grinding step.

[0267] Please refer to Figure 14, step S3, patterning the third bonding layer f3 to form a first opening v1, a first hollow hole k1, and a second hollow hole k2, the first opening v1 exposes the second bonding layer f2, the first hollow hole k1 exposes the second conductive pad 10b, and the second hollow hole k2 exposes the third conductive pad 10c; forming a seventh insulating layer r7 on the sidewall of the first opening v1, a second insulating layer r2 on the sidewall of the first hollow hole k1, and a fourth insulating layer r4 on the sidewall of the second hollow hole k2; then, forming a first metal layer on the third bonding layer f3, the first metal layer at least filling the first opening v1, the first hollow hole k1, and the second hollow hole k2 and covering the third bonding layer f3; then, grinding and removing the first metal layer, removing the first metal layer outside the first opening v1, the first hollow hole k1, and the second hollow hole k2, to form a first conductive bonding portion s1, a first electrical transfer component 2d1, and a first connecting portion d1 flush with the third bonding layer f3.

[0268] Alternatively, a chemical mechanical polishing (CMP) process is used for polishing. The first metal layer is polished by over-polishing. That is, in addition to polishing away the first metal layer on the upper surface of the third bonding layer f3, a small portion of the third bonding layer f3 is also polished away to improve the stability of subsequent bonding.

[0269] The size of each of the first opening v1 , the first hollow hole k1 and the second hollow hole k2 is less than or equal to 1 micron, for example, 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron.

[0270] The slope angles of the first opening v1 , the first hollow hole k1 , and the second hollow hole k2 are respectively greater than or equal to 85 degrees and less than or equal to 90 degrees.

[0271] The thickness of the third bonding layer f3 after grinding is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1500 angstroms or 2000 angstroms, to achieve an auxiliary bonding process.

[0272] Please refer to Figure 15, step S4, a first Bragg reflection layer 2e1 and a fourth bonding layer f4 are sequentially formed on a side of the second LED having a second backplane close to the driven substrate 10, and the fourth bonding layer f4 is patterned to form a second opening v2, which exposes the second common electrode 2b2; then, a second metal layer is formed on the fourth bonding layer f4, and the second metal layer covers the fourth bonding layer f4 and fills the second opening v2; then, the second metal layer is ground to remove the second metal layer outside the second opening v2 to form a second conductive bonding portion s2 flush with the fourth bonding layer f4.

[0273] Step S4 also includes: bonding the second LED and the first LED structure 2a so that the third bonding layer f3 bonds to the fourth bonding layer f4 and the first conductive bonding part s1 bonds to the second conductive bonding part s2; then removing the second backplane to expose the fourth conductive semiconductor layer 2b5 of the second LED.

[0274] Optionally, the thickness of the fourth bonding layer f4 after grinding is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1500 angstroms or 2000 angstroms, to achieve an auxiliary bonding process.

[0275] The thickness of the second metal layer is greater than the depth of the second opening v2.

[0276] The size of the second opening v2 is less than or equal to 1 micron, for example, 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron. The slope angle of the second opening v2 is greater than or equal to 85 degrees and less than or equal to 90 degrees.

[0277] Please refer to Figure 16, step S5, the second LED is patterned to form a second via g2 exposing the first electrical transfer component 2d1; then, a third insulating layer r3 is formed on the hole wall of the second via g2 to expose the first electrical transfer component 2d1; then, a patterned second independent electrode 2b1 is formed on the second LED, and the second independent electrode 2b1 is connected to the first electrical transfer component 2d1 through the second via g2 to form a second LED structure 2b; then, a fifth bonding layer f5 is formed on the second independent electrode 2b1 to fill the second via g2 and cover the second independent electrode 2b1; then, the fifth bonding layer f5 is thinned using a CMP process.

[0278] Optionally, the size of the second via hole g2 is less than or equal to 1 micron, for example, it may be 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron.

[0279] The thickness of the second common electrode 2b2 and the second independent electrode 2b1 is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1100 angstroms, 1200 angstroms, 1300 angstroms, 1400 angstroms, 1500 angstroms, 1600 angstroms, 1700 angstroms, 1800 angstroms, 1900 angstroms, or 2000 angstroms, etc. This configuration ensures the conductivity of the second common electrode 2b2 and the second independent electrode 2b1.

[0280] The thickness of the thinned fifth bonding layer f5 (not the thickness at the second via hole g2) is greater than or equal to 3000 angstroms, for example, 3000 angstroms, 3100 angstroms, 3200 angstroms, 3300 angstroms, 3400 angstroms, 3500 angstroms, 3600 angstroms, 3700 angstroms, 3800 angstroms, 3900 angstroms, 4000 angstroms, 4500 angstroms, or 5000 angstroms. The thickness of the thinned fifth bonding layer f5 is greater than or equal to 3000 angstroms to ensure that the fifth bonding layer f5 has a minimum bonding thickness after the subsequent grinding step.

[0281] Please refer to Figure 17, step S6, pattern the fifth bonding layer f5 to form a third opening v3 and a third hollow hole k3, the third opening v3 exposes the second common electrode 2b2, and the third hollow hole k3 exposes the first connection portion d1; an eighth insulating layer r8 is formed on the side wall of the third opening v3; then, a third metal layer is formed on the fifth bonding layer f5, and the third metal layer at least fills the third opening v3 and the third hollow hole k3 and covers the fifth bonding layer f5; then, the third metal layer is ground and removed, and the third metal layer outside the third opening v3 and the third hollow hole k3 is removed to form a third conductive bonding portion s3 and a second electrical connection portion d2 flush with the fifth bonding layer f5.

[0282] Optionally, a chemical mechanical polishing (CMP) process is used for polishing. The third metal layer is polished by over-polishing. That is, in addition to polishing away the third metal layer on the upper surface of the fifth bonding layer f5, a small portion of the fifth bonding layer f5 is also polished away to improve the stability of subsequent bonding.

[0283] The size of each of the third opening v3 and the third hollow hole k3 is less than or equal to 1 micron, for example, 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron.

[0284] The slope angle of each of the third opening v3 and the third hollow hole k3 is greater than or equal to 85 degrees and less than or equal to 90 degrees.

[0285] The thickness of the fifth bonding layer f5 after grinding is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1500 angstroms or 2000 angstroms, to achieve an auxiliary bonding process.

[0286] Please refer to Figure 18, step S7, a second Bragg reflection layer 2e2 and a sixth bonding layer f6 are sequentially formed on a side of the third LED having a third backplane close to the driven substrate 10, and the sixth bonding layer f6 is patterned to form a fourth opening v4, which exposes the third common electrode 2c2; then, a fourth metal layer is formed on the sixth bonding layer f6, and the fourth metal layer covers the sixth bonding layer f6 and fills the fourth opening v4; then, the fourth metal layer is ground to remove the fourth metal layer outside the fourth opening v4 to form a fourth conductive bonding portion s4 flush with the sixth bonding layer f6.

[0287] Step S7 further includes: bonding the third LED and the second LED structure 2b so that the fifth bonding layer f5 is bonded to the sixth bonding layer f6; and then removing the third back plate to expose the sixth conductive type semiconductor layer 2c5 of the third LED.

[0288] Optionally, the thickness of the sixth bonding layer f6 after grinding is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1500 angstroms or 2000 angstroms, to achieve an auxiliary bonding process.

[0289] The thickness of the fourth metal layer is greater than the depth of the fourth opening v4.

[0290] The fourth opening v4 has a size less than or equal to 1 micron, such as 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron. The fourth opening v4 has a slope angle greater than or equal to 85 degrees and less than or equal to 90 degrees.

[0291] Please refer to Figure 19, step S8, pattern the third LED to form a third via g3 exposing the second connection portion d2; then, form a sixth insulating layer r6 exposing the second connection portion d2 on the hole wall of the third via g3; then, form a patterned third independent electrode 2c1 on the third LED, and the third independent electrode 2c1 is connected to the second connection portion d2 through the third via g3 to form a third LED structure 2c.

[0292] Optionally, step S8 further includes: filling the third via hole g3 with a protection layer r9 so that the protection layer r9 is flush with the third independent electrode 2c1. The material of the protection layer r9 is an insulating material.

[0293] The first LED structure 2 a , the second LED structure 2 b and the third LED structure 2 c are stacked to form a pixel 20 .

[0294] Optionally, a size of the third via hole g3 is less than or equal to 1 micron, for example, 1 micron, 0.9 micron, 0.8 micron, 0.7 micron, 0.6 micron, 0.5 micron, 0.4 micron, 0.3 micron or 0.2 micron.

[0295] The thickness of the third common electrode 2c2 and the third independent electrode 2c1 is greater than or equal to 1000 angstroms, for example, 1000 angstroms, 1100 angstroms, 1200 angstroms, 1300 angstroms, 1400 angstroms, 1500 angstroms, 1600 angstroms, 1700 angstroms, 1800 angstroms, 1900 angstroms, or 2000 angstroms. This configuration ensures the electrical conductivity of the third common electrode 2c2 and the third independent electrode 2c1.

[0296] The above is a detailed introduction to a display panel provided in an embodiment of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for those skilled in the art, based on the ideas of the present application, there may be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A display panel, comprising: A driving substrate, the driving substrate comprising a plurality of conductive pads arranged at intervals; A plurality of pixels, wherein the plurality of pixels are arranged on the driving substrate, and the pixels include: A first LED structure, wherein the first LED structure is disposed on the driving substrate, the first LED structure comprises a first independent electrode located at a side away from the driving substrate, and the first independent electrode is electrically connected to one of the conducting pads; a second LED structure, the second LED structure being arranged on a side of the first LED structure away from the driving substrate, the second LED structure comprising a second independent electrode located on a side away from the first LED structure, the second independent electrode being electrically connected to another of the conducting pads; A third LED structure, the third LED structure is arranged on a side of the second LED structure away from the driving substrate, the third LED structure comprises a third independent electrode located on a side away from the second LED structure, the third independent electrode is electrically connected to another of the conducting pads; and At least one electrical transfer component, the at least one electrical transfer component is disposed on a side of the third LED structure close to the driving substrate, and one of the electrical transfer components is correspondingly connected and disposed on one of the conducting pads; At least one of the first independent electrode, the second independent electrode and the third independent electrode is connected to the electrical switching component through a via hole; in a direction perpendicular to the panel surface of the display panel, the via hole and the electrical switching component are overlapped.

2. The display panel according to claim 1, wherein, The display panel further includes a first bonding layer and a second bonding layer, the materials of the first bonding layer and the second bonding layer are both insulating materials, the first bonding layer is connected and arranged on a side of the driving substrate close to the first LED structure, the second bonding layer is connected and arranged on a side of the first LED structure close to the driving substrate, and the first bonding layer is bonded to the second bonding layer; The first LED structure includes a first common electrode, a first conductive semiconductor layer, a first light-emitting material layer, a second conductive semiconductor layer and the first independent electrode which are sequentially stacked on a side of the second bonding layer away from the driving substrate; At least one of the electrical transfer components includes a first electrical transfer component, the plurality of the conductive pads include a first conductive pad, the first bonding layer is provided with a first hollow hole exposing the first conductive pad, and the first electrical transfer component is filled in the first hollow hole and connected to the first conductive pad; The via includes a first via opened in the first LED structure, the first via passes through the second conductive semiconductor layer, the first light-emitting material layer, the first conductive semiconductor layer, the first common electrode and the second bonding layer, and the first independent electrode extends to cover the first via and is connected to the first electrical transfer component.

3. The display panel according to claim 2, wherein, The display panel further includes a third bonding layer and a fourth bonding layer, the materials of the third bonding layer and the fourth bonding layer are both insulating materials, the third bonding layer is connected and arranged on a side of the first LED structure close to the second LED structure, the fourth bonding layer is connected and arranged on a side of the second LED structure close to the driving substrate, and the third bonding layer is bonded to the fourth bonding layer; The second LED structure includes a second common electrode, a third conductive semiconductor layer, a second light-emitting material layer, a fourth conductive semiconductor layer and the second independent electrode which are sequentially stacked on a side of the fourth bonding layer away from the driving substrate; The plurality of conductive pads include a second conductive pad, at least one of the electrical transfer components includes a second electrical transfer component, the second electrical transfer component includes a first connecting portion and a second connecting portion, the first bonding layer is provided with a second hollow hole exposing the second conductive pad, the first connecting portion is filled in the second hollow hole and connected to the second conductive pad, the first LED structure is provided with a third hollow hole, the third hollow hole penetrates the third bonding layer, the second conductive semiconductor layer, the first light-emitting material layer, the first conductive semiconductor layer, the first common electrode and the second bonding layer and exposes the first connecting portion, the second connecting portion is filled in the third hollow hole and connected to the first connecting portion; The via includes a second via opened in the second LED structure, the second via passes through the fourth conductive semiconductor layer, the second light-emitting material layer, the third conductive semiconductor layer, the second common electrode and the fourth bonding layer, and the second independent electrode extends to cover the second via and is connected to the second connecting portion.

4. The display panel according to claim 3, wherein, The display panel further includes a fifth bonding layer and a sixth bonding layer, the materials of the fifth bonding layer and the sixth bonding layer are both insulating materials, the fifth bonding layer is connected and arranged on a side of the second LED structure close to the third LED structure, the sixth bonding layer is connected and arranged on a side of the third LED structure close to the driving substrate, and the fifth bonding layer is bonded to the sixth bonding layer; The third LED structure includes a third common electrode, a fifth conductive type semiconductor layer, a third light emitting material layer, a sixth conductive type semiconductor layer and the third independent electrode which are sequentially stacked on a side of the sixth bonding layer away from the driving substrate; The plurality of conductive pads include a third conductive pad, at least one of the electrical conversion components includes a third electrical conversion component, the third electrical conversion component includes a third connection portion, a fourth connection portion and a fifth connection portion, the first bonding layer is provided with a fourth hollow hole exposing the third conductive pad, the third connection portion is filled in the fourth hollow hole and connected to the third conductive pad; the first LED structure is provided with a fifth hollow hole, the fifth hollow hole penetrates the third bonding layer, the second conductive semiconductor layer, the first light-emitting material layer, the first conductive semiconductor layer, the first common electrode and the second bonding layer and exposes the third connection portion, the fourth connection portion is filled in the fifth hollow hole and connected to the third connection portion; the second LED structure is provided with a sixth hollow hole, the sixth hollow hole penetrates the fifth bonding layer, the fourth conductive semiconductor layer, the second light-emitting material layer, the third conductive semiconductor layer, the second common electrode and the fourth bonding layer and exposes the fourth connection portion, the fifth connection portion is filled in the sixth hollow hole and connected to the fourth connection portion; The via includes a third via opened in the third LED structure, the third via passes through the sixth conductive semiconductor layer, the third light-emitting material layer, the fifth conductive semiconductor layer, the third common electrode and the sixth bonding layer, and the third independent electrode extends to cover the third via and is connected to the fifth connecting portion.

5. The display panel according to claim 4, wherein, In a direction perpendicular to the surface of the display panel, the first via hole is aligned with the first hollow hole, the second via hole, the second hollow hole and the third hollow hole are aligned, and the third via hole, the fourth hollow hole, the fifth hollow hole and the sixth hollow hole are aligned.

6. The display panel according to claim 5, wherein, The slope angles from the first via hole to the third via hole and from the first hollow hole to the sixth hollow hole are both between 85 degrees and 90 degrees.

7. The display panel according to claim 5, wherein, The plurality of conducting pads further include a fourth conducting pad, and the first common electrode, the second common electrode and the third common electrode are all electrically connected to the fourth conducting pad; The first bonding layer is provided with a first opening, the first opening is filled with a first conductive bonding portion, the first conductive bonding portion is connected to the fourth conductive pad, the second bonding layer is provided with a second opening, the second opening is filled with a second conductive bonding portion, the second conductive bonding portion is connected to the first common electrode and bonded to the first conductive bonding portion; The third bonding layer is provided with a third opening, the third opening also penetrates the first independent electrode, the second conductive type semiconductor layer, the first light emitting material layer and the first conductive type semiconductor layer, the third opening is filled with a third conductive bonding portion, the third conductive bonding portion is connected to the first common electrode, the fourth bonding layer is provided with a fourth opening, the fourth opening is filled with a fourth conductive bonding portion, the fourth conductive bonding portion is connected to the second common electrode and is bonded to the third conductive bonding portion; A fifth opening is formed in the fifth bonding layer, and the fifth opening further penetrates through the second independent electrode, the fourth conductive type semiconductor layer, the second light-emitting material layer, and the third conductive type semiconductor layer. A fifth conductive bonding portion is filled in the fifth opening, and the fifth conductive bonding portion is connected to the second common electrode. A sixth opening is formed in the sixth bonding layer, and a sixth conductive bonding portion is filled in the sixth opening. The sixth conductive bonding portion is connected to the third common electrode and is bonded to the fifth conductive bonding portion.

8. The display panel according to claim 7, wherein, In a direction perpendicular to the plane of the display panel, the first opening to the sixth opening are all aligned.

9. The display panel according to claim 7, wherein, A first insulating layer is provided between a portion of the first independent electrode extending into the first via hole and the sidewall of the first via hole. A second insulating layer is provided between the second connecting portion and the sidewall of the third hollow hole, and a third insulating layer is provided between a portion of the second independent electrode extending into the second via hole and the sidewall of the second via hole. A fourth insulating layer is further provided between the fourth connecting portion and the sidewall of the fifth hollow hole, a fifth insulating layer is provided between the fifth connecting portion and the sidewall of the sixth hollow hole, and a sixth insulating layer is provided between a portion of the third independent electrode extending into the third via hole and the sidewall of the third via hole. A seventh insulating layer is provided between the third conductive bonding portion and the sidewall of the third opening, and an eighth insulating layer is provided between the fifth conductive bonding portion and the sidewall of the fifth opening.

10. The display panel according to claim 1, wherein, The display panel further includes a first bonding layer and a second bonding layer. The materials of the first bonding layer and the second bonding layer are both metal materials. The first bonding layer is connected and disposed on a surface of the driving substrate close to the first LED structure, and the second bonding layer is connected and disposed on a surface of the first LED structure close to the driving substrate. The first bonding layer is bonded to the second bonding layer. The first LED structure includes a first common electrode, a first conductive type semiconductor layer, a first light-emitting material layer, a second conductive type semiconductor layer, and the first independent electrode that are sequentially stacked on a surface of the second bonding layer away from the driving substrate. The plurality of conductive pads include a first conductive pad. The via hole includes a first via hole formed in the first LED structure. The first via hole penetrates through the second conductive type semiconductor layer, the first light-emitting material layer, the first conductive type semiconductor layer, the first common electrode, the second bonding layer, and the first bonding layer and exposes the first conductive pad. The first independent electrode extends to cover the first via hole and is connected to the first conductive pad.

11. The display panel according to claim 10, wherein, The display panel further includes a third bonding layer and a fourth bonding layer. The materials of the third bonding layer and the fourth bonding layer are both insulating materials. The third bonding layer is connected and disposed on a surface of the first LED structure close to the second LED structure, and the fourth bonding layer is connected and disposed on a surface of the second LED structure close to the driving substrate. The third bonding layer is bonded to the fourth bonding layer. The second LED structure includes a second common electrode, a third conductive semiconductor layer, a second light-emitting material layer, a fourth conductive semiconductor layer and the second independent electrode which are sequentially stacked on a side of the fourth bonding layer away from the driving substrate; The plurality of conductive pads include a second conductive pad, at least one of the electrical transfer components includes a first electrical transfer component, the first LED structure is provided with a first hollow hole, the first hollow hole penetrates the third bonding layer, the second conductive semiconductor layer, the first light-emitting material layer, the first conductive semiconductor layer, the first common electrode, the second bonding layer and the first bonding layer and exposes the second conductive pad, and the first electrical transfer component is filled in the first hollow hole and connected to the second conductive pad; The via includes a second via opened in the second LED structure, the second via passes through the fourth conductive semiconductor layer, the second light-emitting material layer, the third conductive semiconductor layer, the second common electrode and the fourth bonding layer, and the second independent electrode extends to cover the second via and is connected to the first electrical transfer component.

12. The display panel according to claim 11, wherein, The display panel further includes a fifth bonding layer and a sixth bonding layer, the materials of the fifth bonding layer and the sixth bonding layer are both insulating materials, the fifth bonding layer is connected and arranged on a side of the second LED structure close to the third LED structure, the sixth bonding layer is connected and arranged on a side of the third LED structure close to the driving substrate, and the fifth bonding layer is bonded to the sixth bonding layer; The third LED structure includes a third common electrode, a fifth conductive type semiconductor layer, a third light emitting material layer, a sixth conductive type semiconductor layer and the third independent electrode which are sequentially stacked on a side of the sixth bonding layer away from the driving substrate; The plurality of conductive pads include a third conductive pad, at least one of the electrical transfer components includes a second electrical transfer component, the second electrical transfer component includes a first connection portion and a second connection portion, the first LED structure is provided with a second hollow hole, the second hollow hole penetrates the third bonding layer, the second conductive semiconductor layer, the first light-emitting material layer, the first conductive semiconductor layer, the first common electrode, the second bonding layer and the first bonding layer and exposes the third conductive pad, the first connection portion is filled in the second hollow hole and connected to the third conductive pad; the second LED structure is provided with a third hollow hole, the third hollow hole penetrates the fifth bonding layer, the fourth conductive semiconductor layer, the second light-emitting material layer, the third conductive semiconductor layer, the second common electrode and the fourth bonding layer and exposes the first connection portion, the second connection portion is filled in the third hollow hole and connected to the first connection portion; The via includes a third via opened in the third LED structure, the third via passes through the sixth conductive semiconductor layer, the third light-emitting material layer, the fifth conductive semiconductor layer, the third common electrode and the sixth bonding layer, and the third independent electrode extends to cover the third via and is connected to the second connecting portion.

13. The display panel according to claim 12, wherein, In a direction perpendicular to the panel surface of the display panel, the second via hole is aligned with the first hollow hole, and the third via hole, the second hollow hole and the third hollow hole are aligned.

14. The display panel according to claim 13, wherein, The slope angles from the first via hole to the third via hole and from the first hollow hole to the third hollow hole are both between 85 degrees and 90 degrees.

15. The display panel according to claim 13, wherein, The plurality of conducting pads further include a fourth conducting pad, the first common electrode, the second common electrode, the third common electrode and the second bonding layer are all electrically connected to the fourth conducting pad, and the first bonding layer is connected to the fourth conducting pad; The third bonding layer is provided with a first opening, the first opening also penetrates the first independent electrode, the second conductive semiconductor layer, the first light-emitting material layer, the first conductive semiconductor layer and the first common electrode, the first opening is filled with a first conductive bonding portion, the first conductive bonding portion is connected to the second bonding layer, the fourth bonding layer is provided with a second opening, the second opening is filled with a second conductive bonding portion, the second conductive bonding portion is connected to the second common electrode and is bonded to the first conductive bonding portion; The fifth bonding layer is provided with a third opening, and the third opening also penetrates the second independent electrode, the fourth conductive semiconductor layer, the second light-emitting material layer and the third conductive semiconductor layer, and the third opening is filled with a third conductive bonding portion, and the third conductive bonding portion is connected to the second common electrode. The sixth bonding layer is provided with a fourth opening, and the fourth opening is filled with a fourth conductive bonding portion, and the fourth conductive bonding portion is connected to the third common electrode and bonded to the third conductive bonding portion.

16. The display panel according to claim 15, wherein, In a direction perpendicular to the surface of the display panel, the first opening to the fourth opening are all aligned.

17. The display panel according to claim 15, wherein, A first insulating layer is disposed between the portion of the first independent electrode extending into the first via hole and the side wall of the first via hole; A second insulating layer is provided between the first electrical switching member and the side wall of the first hollow hole, and a third insulating layer is provided between the portion of the second independent electrode extending into the second via hole and the side wall of the second via hole; A fourth insulating layer is further provided on the sidewalls of the first connecting portion and the second hollow hole, a fifth insulating layer is provided between the second connecting portion and the sidewalls of the third hollow hole, and a sixth insulating layer is provided between the portion of the third independent electrode extending into the third via hole and the sidewalls of the third via hole; A seventh insulating layer is disposed between the first conductive bonding portion and the side wall of the first opening, and an eighth insulating layer is disposed between the third conductive bonding portion and the side wall of the third opening.

18. The display panel according to claim 7, wherein, The first conductive type semiconductor layer, the third conductive semiconductor layer, and the fifth conductive semiconductor layer are P-type semiconductor layers, and the second conductive type semiconductor layer, the fourth conductive semiconductor layer, and the sixth conductive semiconductor layer are N-type semiconductor layers.

19. The display panel according to claim 18, wherein, The first LED structure is configured to emit red light, the second LED structure is configured to emit green light, and the third LED structure is configured to emit blue light.

20. The display panel according to claim 18, wherein, The display panel further includes a first Bragg reflection layer and a second Bragg reflection layer. The first Bragg reflection layer is disposed between the fourth bonding layer and the second common electrode, and the first Bragg reflection layer is configured to reflect the light emitted by the second LED structure and transmit the light emitted by the first LED structure. The second Bragg reflection layer is disposed between the sixth bonding layer and the third common electrode, and the second Bragg reflection layer is configured to reflect the light emitted by the third LED structure and transmit the light emitted by the first LED structure and the second LED structure.

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