Wavelength conversion apparatus and preparation method therefor, and light-emitting apparatus

Abstract

A wavelength conversion apparatus (10) and a preparation method therefor, and a light-emitting apparatus (1). The wavelength conversion apparatus (10) comprises a substrate (100), a first metal transition layer (150), a reflective layer (200), and a wavelength conversion layer (300), wherein the first metal transition layer (150) is connected to a surface of the substrate (100), the reflective layer (200) is connected to the surface of the first metal transition layer (150) that is away from the first metal transition layer (150), and the wavelength conversion layer (300) is arranged on the surface of the reflective layer (200) that is away from the reflective layer (200). The wavelength conversion apparatus (10) does not need to be provided with a separate bonding layer (4). The first metal transition layer (150), the reflective layer (200), the substrate (100) and the wavelength conversion layer (300) are bonded by means of chemical bonds and form a stable thermal-conductive film layer interface, thereby realizing high thermal stability and high reliability and having high inter-layer adhesion, small thickness and small thermal resistance, and thus the thermal conduction capability of the wavelength conversion apparatus (10) can be significantly improved.

Description

Wavelength conversion device and preparation method thereof, and light-emitting device Technical Field

[0001] The present application relates to the field of light source technology, and specifically to a wavelength conversion device and a preparation method thereof, and a light-emitting device. Background Art

[0002] Currently, laser-fluorescence conversion light sources are widely used in LED lighting, stage lights, car lights, searchlights, and other equipment, offering advantages such as high brightness and high-temperature stability. The wavelength conversion device is the core component of the laser-fluorescence conversion light source, and its performance plays a decisive role in the quality of the laser-fluorescence conversion light source.

[0003] Currently, a common packaging method for wavelength conversion devices is to prepare a phosphor layer (single-phase ceramic or multi-phase ceramic), polish one surface of the phosphor layer, and then form a metal reflective layer on the polished surface of the phosphor layer through a physical sputtering or evaporation process. The side of the reflective layer is then placed on a metal heat dissipation substrate coated with a low-temperature curing silver paste. The entire device is placed in a sintering furnace for low-temperature curing and bonding, or soldering is performed to achieve a connection between the substrate layer and the phosphor layer. Metal heat dissipation substrates have excellent thermal conductivity. Therefore, the bonding layer, as a connecting layer, has a significant impact on the excellent heat dissipation performance of the phosphor layer to the metal substrate layer. The bonding layer is typically a solder layer or a sintered silver layer. The solder layer may produce defects such as pores and cracks during the soldering process, affecting the connection quality. The tolerance of the soldered material also limits the choice of solder type. When used as a bonding layer, sintered silver offers advantages over conventional solder in terms of both high thermal and electrical conductivity. It also features low-temperature sintering, eliminating the need for high pressure and high temperature. However, the sintering process is lengthy, resulting in low production efficiency. Furthermore, the resulting bonding layer is porous, making it difficult to detect internal voids. Numerous and large voids can negatively impact heat dissipation and interlayer adhesion. Consequently, this type of fixed structure can experience issues such as fall-off, reduced efficiency, failure, and decreased reliability in practical applications. Summary of the Invention

[0004] The purpose of this application is to provide a wavelength conversion device and a preparation method thereof, and a light-emitting device to improve the above-mentioned problems.

[0005] In a first aspect, an embodiment of the present application provides a wavelength conversion device, comprising a substrate, a first metal transition layer, a reflective layer, and a wavelength conversion layer, wherein the first metal transition layer is connected to the surface of the substrate, the reflective layer is connected to the surface of the first metal transition layer away from the substrate, and the wavelength conversion layer is arranged on the surface of the reflective layer away from the first metal transition layer.

[0006] In one embodiment, the wavelength conversion device further includes an oxide transition layer, which is disposed between the wavelength conversion layer and the reflective layer.

[0007] In one embodiment, the oxide transition layer is selected from at least one of aluminum oxide and silicon oxide.

[0008] In one embodiment, the wavelength conversion device further includes a second metal transition layer, which is disposed between the oxide transition layer and the reflective layer.

[0009] In one embodiment, the second metal transition layer is an aluminum layer.

[0010] In one embodiment, the first metal transition layer is formed of at least one of nickel, nickel-chromium alloy, and titanium.

[0011] In one embodiment, the first metal transition layer, the reflective layer, and the wavelength conversion layer are respectively formed by vapor deposition.

[0012] In one embodiment, the thickness of the first metal transition layer 150 is 100 nm-150 nm.

[0013] In one embodiment, the thickness of the reflective layer is 80 nm to 120 nm.

[0014] In one embodiment, the thickness of the wavelength conversion layer is 1500-5000 nm.

[0015] In one embodiment, the second metal transition layer is formed by vapor deposition.

[0016] In one embodiment, the thickness of the second metal transition layer 350 is 5-20 nm.

[0017] In a second aspect, an embodiment of the present application also provides a method for preparing a wavelength conversion device, comprising: providing a substrate, and sequentially depositing a first metal transition layer on a surface of one side of the substrate by vapor deposition; forming a reflective layer on a surface of the first metal transition layer away from the substrate, and forming a wavelength conversion layer on a surface of the reflective layer away from the first metal transition layer.

[0018] In one embodiment, before forming the reflective layer, an oxide transition layer is formed on the surface of the first metal transition layer away from the substrate by vapor deposition, and then a reflective layer is formed on the surface of the oxide transition layer away from the first metal transition layer.

[0019] In one embodiment, before forming the reflective layer, a second metal transition layer is formed on the surface of the oxide transition layer away from the first metal transition layer by vapor deposition, and then a reflective layer is formed on the surface of the second metal transition layer away from the oxide transition layer.

[0020] In a third aspect, an embodiment of the present application further provides a light-emitting device, which includes an excitation light source and the above-mentioned wavelength conversion device, wherein the excitation light source emits excitation light to excite the wavelength conversion device to emit stimulated light.

[0021] The wavelength conversion device and light-emitting device provided in the present application do not require a separate adhesive layer. The first metal transition layer, the reflective layer, the substrate and the wavelength conversion layer are chemically bonded to form a stable heat-conducting film layer interface, thereby achieving high thermal stability and high reliability. The interlayer adhesion is strong, the thickness is thin, and the thermal resistance is small, which can significantly improve the thermal conductivity of the wavelength conversion device.

[0022] The preparation method of the wavelength conversion device provided in the present application starts from a substrate and uses vapor deposition to epitaxially grow a first metal transition layer, a reflective layer and a wavelength conversion layer. The first metal transition layer, the reflective layer, the substrate and the wavelength conversion layer are chemically bonded together without the need for traditional adhesives, forming a stable heat-conducting film layer interface. The prepared wavelength conversion device can achieve high thermal stability and high reliability, strong interlayer adhesion, thin thickness and low thermal resistance.

[0023] These and other aspects of the present application will become more readily apparent from the description of the following embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0025] FIG1 is a schematic structural diagram of a wavelength conversion device in the prior art shown in this application.

[0026] FIG2 is a schematic structural diagram of a wavelength conversion device provided in Example 1 of the present application.

[0027] FIG3 is a schematic structural diagram of a wavelength conversion device provided in Example 2 of the present application.

[0028] FIG4 is a schematic structural diagram of a light-emitting device provided in Example 3 of the present application. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0030] Currently, wavelength conversion devices typically consist of a stacked substrate, adhesive layer, reflective layer, and light-emitting layer. This method of fabricating wavelength conversion devices can lead to unstable interlayer adhesion and thermal expansion coefficient matching. This poor interlayer adhesion can easily cause the light-emitting layer to detach from the heatsink substrate. Furthermore, the complex interlayer structure makes thermal expansion coefficient matching more challenging. During use, as the ambient temperature fluctuates, the interlayer materials can contract and expand to varying degrees, ultimately leading to device failure and negatively impacting the device's reliability and long-term stability.

[0031] Figure 1 shows a conventional wavelength conversion device, which includes, from top to bottom, a phosphor layer 1, a metal reflective layer 2, a protective layer 3, an adhesive layer 4, and a heat dissipation substrate layer 5. The adhesive layer 4 serves to bond the phosphor layer 1 and the heat dissipation substrate layer 5, typically using solder or silver glue. This method of fabricating wavelength conversion devices requires a wide variety of film layers, resulting in a complex preparation process and high equipment requirements.

[0032] Example 1

[0033] Referring to Figure 2, this embodiment provides a wavelength conversion device 10, including a substrate 100, a first metal transition layer 150, a reflective layer 200 and a wavelength conversion layer 300, wherein the first metal transition layer 150 is connected to a side surface of the substrate 100, the reflective layer 200 is connected to a surface of the first metal transition layer away from the substrate 100, and the wavelength conversion layer 300 is arranged on a surface of the reflective layer 200 away from the first metal transition layer 150.

[0034] In this embodiment, the substrate 100 may be a metal substrate 100. Metal substrates have good machinability and are easily processed into a desired shape. In addition, the metal substrate can form a tighter and more stable chemical bond with the first metal transition layer 150, thereby improving the bonding strength between the substrate 100 and the first metal transition layer 150. In other embodiments, the substrate 100 may also be a ceramic substrate 100, such as aluminum nitride, silicon carbide, silicon nitride, aluminum oxide, or the like. These ceramic substrates 100 have excellent thermal conductivity and high temperature resistance, and have the advantage of matching the thermal expansion coefficient of fluorescent ceramics. The substrate 100 may also be a sapphire substrate, etc., which is not limited in this embodiment.

[0035] The first metal transition layer 150 can be formed of a metal material or a metal alloy material. In one embodiment, the first metal transition layer 150 can be formed of at least one of nickel, nickel-chromium alloy, and titanium. In this embodiment, the first metal transition layer 150 is a nickel layer. The thickness of the first metal transition layer 150 can be 100nm-150nm. By setting a lower thickness of the first metal transition layer, the influence of factors such as internal cavities and pores on heat transfer after the thickness of the first metal transition layer is increased is avoided. The thin interlayer thickness reduces thermal resistance, and the chemical bonding adhesion between the first metal transition layer and the other layers is strong. Of course, in other embodiments, the thickness of the first metal transition layer 150 can also be other values, which are not limited in this embodiment.

[0036] The reflective layer 200 can reflect the converted converted light by the wavelength conversion layer 300, as well as the excitation light. The reflective layer 200 also serves to tightly connect the first metal transition layer 150 and the wavelength conversion layer 300. Furthermore, the reflective layer 200 can quickly transfer some of the heat generated by the excitation light irradiating the wavelength conversion layer 300 to the substrate 100, thereby dissipating the heat. The reflective layer 200 can be a metal reflective film layer, for example, primarily composed of silver. The thickness of the reflective layer 200 can be 80 nm to 120 nm. Compared to conventional reflective layer thicknesses of 150 nm to 300 nm, or even thicker, the embodiments of the present application reduce the heat conduction distance from the wavelength conversion layer to the substrate, thereby improving heat conduction efficiency and reducing the thickness of the overall wavelength conversion device, thereby facilitating miniaturization of the entire structure. Of course, in other embodiments of the present application, the thickness of the reflective layer 200 can also be other values, which are not limited in this embodiment. It is understandable that in some other implementations, the reflective layer 200 may also be made of other metals, such as gold, aluminum, etc., which is not limited in this embodiment.

[0037] The wavelength conversion layer 300 may be a fluorescent ceramic layer. The fluorescent ceramic layer may be a Ce:YAG or Ce:LuAG single-phase ceramic, or an Al2O3-Ce:YAG or Al2O3-Ce:LuAG multiphase ceramic, which is not specifically limited in this embodiment. The wavelength conversion layer 300 can convert the excitation light into stimulated light under the excitation of the excitation light. In a more specific embodiment, the laser light may be blue light, and the wavelength conversion layer 300 can convert the blue light into yellow fluorescence.

[0038] By providing the first metal transition layer 150 , the internal stresses formed in different functional film layers due to different crystal structures can be gradually relaxed, thereby reducing defects such as cracking in subsequent interlayer structures.

[0039] In this embodiment, the first metal transition layer 150, reflective layer 200, and wavelength conversion layer 300 are all formed sequentially via vapor deposition. This embodiment has the advantage that chemical bonds form between adjacent layers during the vapor deposition process, enhancing their adhesion and forming a stable thermally conductive film interface, achieving high thermal stability and reliability. The strong interlayer adhesion, thin thickness, and low thermal resistance significantly enhance the thermal conductivity of the wavelength conversion device 10. During the fabrication process, no additional adhesive is required, reducing the thickness of the entire wavelength conversion device 10 and avoiding the voiding problem associated with adhesives. This also reduces the number of fabrication steps and improves production efficiency.

[0040] Among them, the vapor deposition method can be a vacuum evaporation method, that is, heating in a vacuum to evaporate the metal, alloy or compound, and then condense it on the surface of the substrate. The vapor deposition method can also be a magnetron sputtering method, that is, using high-speed positive ions to bombard a target material (cathode) so that the atoms on the surface of the target material escape with a certain energy, and then deposit on the surface of the workpiece. The vapor deposition method can also be ion plating, that is, using a glow discharge of an inert gas to evaporate and ionize the metal or alloy to be plated, and these charged ions bombard the surface of the substrate (workpiece) and simultaneously deposit on it to form a coating. In some embodiments of the present application, the vapor deposition method can be one of electron beam evaporation, atomic layer deposition and magnetron sputtering. Among them, electron beam evaporation can achieve dense and uniformly thick metal films, such as the first metal transition layer, the reflective layer, and the second metal transition layer. Atomic layer deposition can control the surface at the atomic layer scale, ensuring precise sub-monolayer film thickness control, resulting in higher stoichiometry and density of the film, and achieving uniform and excellent high-quality oxide growth. For example, in some embodiments of the present application, atomic layer deposition can be used to grow the oxide transition layer. Magnetron sputtering can rapidly grow large-area, uniform film layers in a relatively short time and at a relatively low cost. For example, in the embodiments of the present application, magnetron sputtering is used to form various film layers other than the substrate, and in one embodiment, magnetron sputtering is used to form the wavelength conversion layer. By selecting the preferred physical deposition technology for each film layer, a wavelength conversion device with excellent film quality and continuous growth from top to bottom can be obtained.

[0041] Specifically, the film layers prepared by any of the vapor deposition methods are thinner than those prepared by conventional methods. For example, the thickness of the first metal transition layer 150 is 100nm-150nm, the thickness of the reflective layer is 80nm-120nm, and the thickness of the wavelength conversion layer is 1500-5000nm. The fixed wavelength conversion device prepared by this vapor deposition method does not require solder and silver glue to connect the substrate and the wavelength conversion layer. The continuous in-situ epitaxial growth starting from the substrate can achieve a film interface with strong chemical bonding and thermal conductivity, which can achieve high thermal stability and high reliability. In addition, the physical and chemical vapor deposition method does not require the high-temperature and high-pressure equipment and conditions required for the synthesis of traditional wavelength conversion layers. The wavelength conversion device encapsulated by this method has strong chemical bonding adhesion between the layers, thin interlayer thickness, and low thermal resistance, which can significantly improve the thermal conductivity and reliability of the wavelength conversion device.

[0042] Specifically, the wavelength conversion device 10 can be prepared as follows:

[0043] A substrate 100, for example, a copper substrate 100, is provided. The copper substrate 100 is ultrasonically cleaned in acetone, isopropyl alcohol, and deionized water, followed by drying with a nitrogen gas stream. The surface of the copper substrate 100 is then plasma cleaned in an air or oxygen atmosphere for 10 minutes. After cleaning, a baffle is placed on the surface of the substrate 100, with the center of the baffle forming a deposition area. The baffle primarily protects the non-deposition area of ​​the substrate 100. A first metal transition layer 150 is formed in the deposition area of ​​the substrate 100 by magnetron sputtering. The thickness of the first metal transition layer 150 is 100nm-150nm. After the first metal transition layer 150 is formed, magnetron sputtering is continued to be used to form a reflective layer 200 on the surface of the first metal transition layer 150 away from the substrate 100. The thickness of the reflective layer 200 is 80nm-120nm. After the reflective layer 200 is formed, magnetron sputtering is continued to be used to form a wavelength conversion layer 300 on the surface of the reflective layer 200 away from the first metal transition layer 150. The thickness of the wavelength conversion layer 300 can be 1500-5000nm.

[0044] Continuous use of vapor deposition for preparation can avoid contamination by impurities in the air, thereby improving the purity of each film layer.

[0045] In some embodiments, referring again to FIG. 2 , the wavelength conversion device 10 may further include an oxide transition layer 250 disposed between the wavelength conversion layer 300 and the reflective layer 200. The provision of the oxide transition layer 250 allows for a stronger bonding force to be formed between the wavelength conversion layer 300 and the oxide transition layer 250 during chemical bonding. Similarly, the reflective layer 200 and the oxide transition layer 250 can also form a stronger bonding force during chemical bonding, thereby improving the bonding strength between the wavelength conversion layer 300 and the reflective layer 200. Furthermore, the provision of the oxide transition layer 250 can also relax internal stress formed between the reflective layer 200 and the wavelength conversion layer 300 due to the different crystal structures, thereby reducing the risk of cracking and other defects in the subsequent interlayer structure.

[0046] The oxide transition layer 250 may be selected from at least one of aluminum oxide and silicon oxide. In other embodiments, the oxide transition layer 250 may also be selected from one or more of titanium oxide, zirconium oxide, hafnium oxide, niobium oxide, nickel oxide, neodymium oxide, and other oxides.

[0047] In this embodiment, the wavelength conversion layer 300 is made of YAG:Ce, wherein YAG is a cubic crystal system composed of yttrium, aluminum and oxygen, and the lattice parameter is When selecting the second oxide transition layer 250, it is preferred to use a material having a lattice parameter that matches or is close to that of the wavelength conversion layer 300. The higher the lattice matching, the more it helps to reduce stress and defects, and improve the stability and performance of the material.

[0048] See Table 1, which shows the lattice parameters of common oxides:

[0049] As shown in Table 1, aluminum oxide is the most commonly used transition layer material for YAG films, due to its lattice parameters and thermal expansion coefficient being similar to those of YAG. Yttrium oxide (Y2O3) is also a good choice, as it shares a similar crystal structure and lattice constant with YAG. Niobium oxide (Nb2O5) and hafnium oxide (HfO2) are also considered transition layer materials.

[0050] The thickness of the oxide transition layer 250 may be, for example, 5 nm to 20 nm. Of course, in some other implementations, the thickness of the oxide transition layer 250 may also be other values, which is not limited in this embodiment.

[0051] At this time, the wavelength conversion device 10 can be prepared in the following manner:

[0052] A substrate 100, for example, a copper substrate 100, is provided. The copper substrate 100 is ultrasonically cleaned in acetone, isopropyl alcohol, and deionized water, followed by drying with a nitrogen stream. The surface of the copper substrate 100 is then plasma cleaned in an air or oxygen atmosphere for 10 minutes. After cleaning, the substrate 100 is secured using a fixture 500. A baffle is placed on the surface of the substrate 100, with the center of the baffle forming a deposition area. A first metal transition layer 150 is formed in the deposition area of ​​the substrate 100 by magnetron sputtering. After the first metal transition layer 150 is formed, a reflective layer 200 is formed on the surface of the first metal transition layer 150 away from the substrate 100 by magnetron sputtering. The thickness of the reflective layer 200 is 80nm-120nm. After the reflective layer 200 is formed, an oxide transition layer 250 is formed on the surface of the reflective layer 200 away from the first metal transition layer 150 by magnetron sputtering. The thickness of the oxide transition layer 250 can be 5nm-20nm. Magnetron sputtering is continued to form a wavelength conversion layer 300 on the surface of the reflective layer 200 away from the first metal transition layer 150 by magnetron sputtering. The thickness of the wavelength conversion layer 300 can be 1500-5000nm.

[0053] Example 2

[0054] 3 , this embodiment provides a wavelength conversion device 10 , which differs from the first embodiment in that, in this embodiment, the wavelength conversion device 10 further includes a second metal transition layer 350 . For the same parts, reference may be made to the first embodiment, which will not be described in detail in this embodiment.

[0055] In this embodiment, the second metal transition layer 350 is disposed between the oxide transition layer 250 and the reflective layer 200. Specifically, the second metal transition layer 350 is an aluminum layer. By providing aluminum and an oxide transition layer, particularly when aluminum oxide is used as the transition layer, the aluminum transition layer and the aluminum oxide transition layer have similar chemical structures, resulting in a more stable wavelength conversion structure. The second metal transition layer 350 protects the reflective layer 200 from degradation and reduces internal stress caused by the different crystal structures of the oxide transition layer 250, thereby reducing the risk of cracking and other defects in the subsequent interlayer structure.

[0056] In some embodiments of the present application, the second metal transition layer 350 can be formed by vapor deposition, such as electron beam evaporation, atomic layer deposition, and magnetron sputtering. Therefore, the thickness of the second metal transition layer 350 can be relatively thin, such as 5-20 nm.

[0057] The wavelength conversion device 10 can be prepared as follows:

[0058] A substrate 100, for example, a copper substrate 100, is provided. The copper substrate 100 is ultrasonically cleaned in acetone, isopropyl alcohol, and deionized water, followed by drying with a nitrogen gas stream. The surface of the copper substrate 100 is then plasma cleaned in an air or oxygen atmosphere for 10 minutes. After cleaning, a baffle is placed on the surface of the substrate 100, with the center of the baffle forming a deposition area. A first metal transition layer 150 is formed in the deposition area of ​​the substrate 100 by electron beam evaporation. After the first metal transition layer 150 is formed, a reflective layer 200 is formed on the surface of the first metal transition layer 150 away from the substrate 100 by electron beam evaporation. The thickness of the reflective layer 200 is 80nm-120nm. After the reflective layer 200 is formed, a second metal transition layer 350 is formed on the surface of the reflective layer 200 away from the first metal transition layer 150 by electron beam evaporation. The thickness of the second metal transition layer 350 is 5-20nm. After the second metal transition layer 350 is formed, an oxide transition layer 250 is formed on the surface of the second metal transition layer 350 away from the reflective layer 200 by atomic layer deposition. The thickness of the oxide transition layer 250 can be 5nm-20nm. Magnetron sputtering is continued to form a wavelength conversion layer 300 on the surface of the reflective layer 200 away from the first metal transition layer 150. The thickness of the wavelength conversion layer 300 can be 1500-5000nm. Among them, electron beam evaporation can achieve dense and uniformly thick metal films, such as the first metal transition layer 150, the reflective layer 200, and the second metal transition layer 350. Atomic layer deposition can control the surface at the atomic layer scale, ensuring precise sub-monolayer film thickness control, improving film stoichiometry and density, and achieving uniform and excellent growth of high-quality oxide transition layer 250. Magnetron sputtering can rapidly grow large, uniform wavelength conversion layer 300 in a short time and at a low cost. By selecting the optimal physical deposition technology for each film layer, a wavelength conversion device with excellent film quality and continuous growth from top to bottom can be obtained.

[0059] The wavelength conversion device 10 provided in this embodiment does not require a separate adhesive layer. The first metal transition layer 150, the reflective layer 200, the substrate 100, and the wavelength conversion layer 300 are chemically bonded to form a stable heat-conducting film interface, achieving high thermal stability and high reliability. The interlayer adhesion is strong, the thickness is thin, and the thermal resistance is low, which can significantly improve the thermal conductivity of the wavelength conversion device 10.

[0060] The preparation method of the wavelength conversion device 10 provided in the present application starts from a substrate 100 and uses vapor deposition to epitaxially grow a first metal transition layer 150, a reflective layer 200 and a wavelength conversion layer 300. The first metal transition layer 150, the reflective layer 200, the substrate 100 and the wavelength conversion layer 300 are chemically bonded to each other without the use of traditional adhesives, forming a stable heat-conducting film layer interface. The prepared wavelength conversion device 10 can achieve high thermal stability and high reliability, strong interlayer adhesion, thin thickness and low thermal resistance.

[0061] Example 3

[0062] Referring to FIG. 4 , this embodiment provides a light-emitting device 1 comprising an excitation light source 20 and a wavelength conversion device 10. The excitation light source 20 emits excitation light, which excites the wavelength conversion device 10 to emit converted light. The excitation light source can be, for example, a laser, an LED, or a fluorescent lamp, for emitting the excitation light. The wavelength conversion device 10 can be any of the aforementioned embodiments, and for details, please refer to the relevant contents of the aforementioned embodiments.

[0063] The excitation light source 20 may be, for example, a blue light source. In some other implementations, the excitation light source 20 may also be a light source of other colors, which is not limited in this embodiment.

[0064] The above description is merely a preferred embodiment of the present application and is not intended to limit the present application. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A wavelength conversion device, characterized in that: include: substrate; A first metal transition layer, wherein the first metal transition layer is connected to a surface of the substrate; a reflective layer, the reflective layer being connected to a surface of the first metal transition layer away from the substrate; as well as A wavelength conversion layer is disposed on a surface of the reflective layer away from the first metal transition layer.

2. The wavelength conversion device according to claim 1, characterized in that: The wavelength conversion device further includes an oxide transition layer, and the oxide transition layer is arranged between the wavelength conversion layer and the reflective layer.

3. The wavelength conversion device according to claim 2, characterized in that: The oxide transition layer is selected from at least one of aluminum oxide, silicon oxide, titanium oxide, zirconium oxide, hafnium oxide, niobium oxide, nickel oxide, and neodymium oxide.

4. The wavelength conversion device according to claim 1, characterized in that: The wavelength conversion device further includes a second metal transition layer, which is disposed between the oxide transition layer and the reflective layer.

5. The wavelength conversion device according to claim 4, characterized in that: The second metal transition layer is an aluminum layer.

6. The wavelength conversion device according to claim 1, characterized in that: The first metal transition layer is formed of at least one of nickel, nickel-chromium alloy and titanium.

7. The wavelength conversion device according to any one of claims 1 to 6, characterized in that: The first metal transition layer, the reflective layer and the wavelength conversion layer are respectively formed by vapor deposition.

8. The wavelength conversion device according to claim 7, characterized in that: The thickness of the first metal transition layer 150 is 100 nm-150 nm.

9. The wavelength conversion device according to claim 7, characterized in that: The thickness of the reflective layer is 80nm-120nm.

10. The wavelength conversion device according to claim 7, characterized in that: The thickness of the wavelength conversion layer is 1500-5000nm.

11. The wavelength conversion device according to claim 4 or 5, characterized in that: The second metal transition layer is formed by vapor deposition.

12. The wavelength conversion device according to claim 11, characterized in that: The thickness of the second metal transition layer 350 is 5-20 nm.

13. A method for preparing a wavelength conversion device, characterized in that: include: A substrate is provided, and a first metal transition layer is sequentially deposited on a surface of one side of the substrate by vapor deposition; a reflective layer is formed on a surface of the first metal transition layer away from the substrate, and a wavelength conversion layer is formed on a surface of the reflective layer away from the first metal transition layer.

14. The method for preparing a wavelength conversion device according to claim 13, characterized in that: Before forming the reflective layer, an oxide transition layer is formed on a surface of the first metal transition layer away from the substrate by vapor deposition, and then the reflective layer is formed on a surface of the oxide transition layer away from the first metal transition layer.

15. The method for preparing a wavelength conversion device according to claim 14, characterized in that: Before forming the reflective layer, a second metal transition layer is formed on a surface of the oxide transition layer away from the first metal transition layer by vapor deposition, and then the reflective layer is formed on a surface of the second metal transition layer away from the oxide transition layer.

16. A light emitting device, characterized in that: The light emitting device comprises an excitation light source and a wavelength conversion device as claimed in any one of claims 1 to 12, wherein the excitation light source emits excitation light to excite the wavelength conversion device to emit stimulated light.

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