Film formation method, plasma treatment method, and plasma treatment device

Abstract

The disclosed film formation method includes the following steps (a), (b), and (c). In step (a), a gas containing carbon is supplied into a plasma treatment space in a chamber of a plasma treatment device. In step (b), while step (a) is performed, plasma is generated from the gas in the plasma treatment space to form a film on a portion exposed in the plasma treatment space. In step (c), at least one bias signal is supplied to the portion during the period in which step (b) is performed.

Description

Film forming method, plasma processing method, and plasma processing apparatus

[0001] FIELD Embodiments of the present disclosure relate to a film forming method, a plasma processing method, and a plasma processing apparatus.

[0002] A plasma processing system is used in plasma processing of a substrate. Patent Document 1 below discloses a method for optimizing etching resistance of a substrate in a plasma processing system. The method includes flowing a precoat gas mixture into a plasma processing chamber and irradiating a first plasma of the precoat gas mixture.

[0003] Special Publication No. 2008-505490

[0004] The present disclosure provides a technique for protecting a portion exposed to a plasma processing space.

[0005] In one exemplary embodiment, a film formation method is provided. The film formation method includes the following steps (a), (b), and (c). In step (a), a carbon-containing gas is supplied into a plasma processing space in a chamber of a plasma processing apparatus. In step (b), plasma is generated from the gas in the plasma processing space during execution of step (a), and a film is formed on a portion exposed to the plasma processing space. In step (c), at least one bias signal is supplied to the portion while step (b) is being performed. The plasma processing apparatus includes a chamber, a substrate support, an upper electrode, an insulating portion, and a shield member. The chamber is electrically grounded and provides a plasma processing space. The substrate support is provided within the chamber and configured to support a substrate. The upper electrode is a part of a ceiling provided to close an opening of the chamber above the plasma processing space, configured to be able to apply high-frequency power, and provided above the substrate support. The insulating portion is a part of the ceiling portion and is provided between the upper electrode and the chamber to electrically isolate the upper electrode from the chamber. The shield member is another part of the ceiling portion, is conductive, is made of a silicon-containing material, and extends from the periphery of the upper electrode to the chamber. The portion exposed to the plasma processing space is made of a conductor.

[0006] According to the present disclosure, it is possible to protect the portion exposed to the plasma processing space.

[0007] Fig. 1 is a diagram for explaining a configuration example of a plasma processing system; Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus; Fig. 3 is a diagram for explaining a plasma processing apparatus according to an exemplary embodiment; Fig. 4 is a flowchart for explaining a plasma processing method and a film forming method according to an exemplary embodiment; Fig. 5 is a diagram for explaining a plasma processing apparatus according to another exemplary embodiment.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] FIG. 1 is a diagram illustrating an exemplary configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one precoat gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one precoat gas supplied into the plasma processing space. The plasma generated in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one precoat gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0018] The showerhead 13 is configured to introduce at least one precoat gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The precoat gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode 13d. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one precoat gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one precoat gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes a plasma to be formed from at least one precoat gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generating unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0024] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] A plasma processing apparatus according to an exemplary embodiment will be described below with reference to Figures 2 and 3. Figure 3 is a diagram showing an upper electrode and a shield member provided in the plasma processing apparatus shown in Figure 2.

[0027] 3, the sidewall 10a of the plasma processing chamber 10 has a substantially cylindrical shape. The sidewall 10a is connected to ground and has a ground potential. The upper end of the sidewall 10a is open.

[0028] The plasma processing apparatus 1 has a ceiling 14 above the plasma processing space 10s. The ceiling 14 is provided to close the opening of the plasma processing chamber 10. That is, the ceiling 14 covers and closes the opening at the upper end of the sidewall 10a. A portion of the ceiling 14 is exposed to the plasma processing space 10s.

[0029] The shower head 13, which constitutes part of the ceiling part 14, includes at least one upper electrode 13d. The upper electrode 13d is part of the ceiling part 14, is configured to be able to apply high-frequency power, and is provided above the substrate support part 11. The upper electrode 13d is electrically connected to, for example, a first RF generator 31a. The first RF generator 31a is an example of a high-frequency power source.

[0030] The upper electrode 13d includes a top plate 13e and a first support 13f. The top plate 13e has a substantially disk shape. The top plate 13e is in contact with the plasma processing space 10s. The top plate 13e is made of a conductive material such as silicon. The top plate 13e may be formed by forming a corrosion-resistant film on the surface of a conductive member such as aluminum. The corrosion-resistant film is made of a material such as aluminum oxide or yttrium oxide.

[0031] The first support 13f is provided on the top plate 13e. The first support 13f detachably supports the top plate 13e. The first support 13f is formed of, for example, aluminum. The first support 13f provides at least one gas diffusion chamber 13b therein. The first support 13f, together with the top plate 13e, provides at least one gas inlet 13c. The at least one gas inlet 13c extends downward from the at least one gas diffusion chamber 13b and penetrates the top plate 13e.

[0032] The ceiling portion 14 further includes a first insulating member 41. The first insulating member 41 is an example of an insulating portion. The first insulating member 41 is a part of the ceiling portion 14. The first insulating member 41 is formed of an insulator such as quartz. The first insulating member 41 includes a first insulating portion 46 and a second insulating portion 47. The first insulating portion 46 is provided between the upper electrode 13d and the plasma processing chamber 10. The first insulating portion 46 electrically separates the upper electrode 13d from the plasma processing chamber 10. The first insulating portion 46 is provided on the outer side (the sidewall 10a side) of the upper electrode 13d. The first insulating portion 46 has a substantially ring shape and extends circumferentially to surround the upper electrode 13d. The second insulating portion 47 will be described later.

[0033] The ceiling 14 further includes a shield member 42. The shield member 42 is another part of the ceiling 14 and is conductive. The shield member 42 is formed, for example, from a silicon-containing material. The shield member 42 extends from the periphery of the upper electrode 13d to the plasma processing chamber 10. The shield member 42 extends circumferentially to surround the periphery of the top plate 13e. The shield member 42 has, for example, a substantially annular shape. The shield member 42 is provided, for example, below the first insulating member 41. The shield member 42 extends so as not to expose the first insulating member 41 to the plasma processing space 10s. In the example shown in FIG. 3, the shield member 42 is provided below a portion of the first support 13f, the first insulating member 41, and a portion of a second support 43 (described later).

[0034] At least a portion of the portion exposed to the plasma processing space 10s (hereinafter also referred to as the exposed portion) is made of a conductor. The exposed portion includes, for example, at least a portion of the ceiling portion 14, at least a portion of the sidewall 10a, and at least a portion of the substrate support portion 11. For example, the exposed portion of the ceiling portion 14 is made of a conductor including the upper electrode 13d and the shield member 42. For example, the exposed portion of the ceiling portion 14 is made of only a conductor. In the example shown in FIG. 3, the exposed portion of the ceiling portion 14 is made of only the upper electrode 13d (or the top plate 13e) and the shield member 42.

[0035] In the plasma processing apparatus 1, the entire exposed area of ​​the ceiling 14 is made of a conductor (conductive material). Therefore, reaction products adhering to the exposed area can be removed by supplying a bias signal during dry cleaning. As a result, the reaction products can be prevented from adhering to the substrate W as particles.

[0036] The plasma processing chamber 10 may further include a second support 43. The second support 43 is provided outside the first insulating member 41 and above the shield member 42. A small gap is provided between the second support 43 and the shield member 42. The second support 43 is provided on the sidewall 10a of the plasma processing chamber 10. The second support 43 is electrically connected to the sidewall 10a of the plasma processing chamber 10. The potential of the second support 43 is set to ground potential. The first insulating member 41 is provided between the first support 13f of the upper electrode 13d and the second support 43. The second support 43 has a substantially ring shape and extends circumferentially to surround the first insulating member 41. The second support 43 is formed of a metal such as aluminum.

[0037] The second insulating portion 47 is provided outside the first insulating portion 46 and on the shield member 42. The second insulating portion 47 has, for example, a substantially ring shape and extends circumferentially to surround the first insulating portion 46. The second insulating portion 47 extends so as to protrude outward from the lower end of the first insulating portion 46. The second insulating portion 47 is interposed between the plasma processing chamber 10 and the shield member 42. In the example shown in FIG. 3 , the second insulating portion 47 is provided so that its lower surface is in contact with the outer upper surface of the shield member 42. The second insulating portion 47 is provided between the shield member 42 and the second support 43.

[0038] Thus, in the plasma processing apparatus 1, a first insulating member 41 having a first insulating portion 46 and a second insulating portion 47 is interposed between the upper electrode 13d and the plasma processing chamber 10, and between the plasma processing chamber 10 and the shield member 42.

[0039] The plasma processing apparatus 1 further includes at least one second insulating member 45. The at least one second insulating member 45 is provided below the shield member 42. The at least one second insulating member 45 is interposed between the plasma processing chamber 10 and the shield member 42. The shield member 42 is supported between the at least one third insulating member 44 and the at least one second insulating member 45.

[0040] 3 , the at least one second insulating member 45 includes a third support 45a and a sealing member 45b. The third support 45a is provided on the sidewall 10a. The third support 45a supports the shield member 42 from below. A portion of the inner surface of the third support 45a may be exposed to the plasma processing space 10s below the ceiling 14. The sealing member 45b is provided between the shield member 42 and the third support 45a. The sealing member 45b is arranged so as to contact an outer portion of the shield member 42 and an outer portion of the third support 45a. The sealing member 45b is, for example, an O-ring that separates a reduced-pressure environment including the plasma processing space 10s from an atmospheric pressure environment.

[0041] The upper electrode 13d and / or the shield member 42 are electrically connected to the second DC generator 32b. In the example shown in FIG. 3 , a DC connector 48 is provided within the second support 43. The DC connector 48 extends from the inside of the second support 43 through the second insulating portion 47 and connects to an outer portion of the shield member 42. The outer portion of the shield member 42 may be, for example, a radially outer portion of the shield member 42 that is not exposed to the plasma processing space 10s. The outer portion of the shield member 42 may be the peripheral portion of the shield member 42. The outer portion of the shield member 42 is supported by being sandwiched between the lower end of the DC connector 48 and at least one second insulating member 45. For example, the lower end of the DC connector 48 is provided directly above the sealing member 45b of at least one second insulating member 45 in the circumferential direction.

[0042] The second DC signal generated by the second DC generator 32b is applied to the upper electrode 13d and / or the shield member 42 via the DC connector 48. According to the plasma processing apparatus 1, even if the DC connector 48 is located outside the first insulating member 41, the DC connector 48 penetrates the second insulating portion 47 to connect to the shield member 42, thereby allowing the second DC signal to be appropriately applied to the shield member 42. By applying the second DC signal to the shield member 42, the second DC signal is applied to the upper electrode 13d via the shield member 42. The second DC signal, i.e., the bias signal, applied to the upper electrode 13d and / or the shield member 42 is a negative DC voltage or voltage pulse (negative voltage pulse). The voltage pulse is applied periodically at a frequency of, for example, 400 kHz. The absolute value of the voltage level of the DC voltage or voltage pulse, which is the second DC signal, is 100 V or higher. As a result, a negative DC voltage having an absolute value of 100 V or more is applied to the upper electrode 13 d and / or the shield member 42 .

[0043] In the plasma processing apparatus 1, the first RF generating unit 31a may generate a signal having a frequency of, for example, 100 MHz as a source RF signal and supply it to the upper electrode 13d. Furthermore, the second RF generating unit 31b may generate a signal having a frequency of, for example, 13 MHz as a bias RF signal and supply it to the lower electrode of the substrate support unit 11. Alternatively, the first DC generating unit 32a may supply a first DC signal to the lower electrode of the substrate support unit 11.

[0044] The current flowing based on the source RF signal, i.e., the radio frequency power, supplied to the upper electrode 13d can be classified into two possible paths: a first path that does not pass through the plasma, and a second path that passes through the plasma. In the first path, the current flows from the upper electrode 13d to the sidewall 10a via the shield member 42, at least one third insulating member 44, and the second support 43. In the second path, the current flows from the upper electrode 13d to the sidewall 10a via the plasma in the plasma processing space 10s. The at least one third insulating member 44 reduces the electrostatic capacitance between the shield member 42 and the second support 43, thereby increasing the impedance of the first path. Therefore, the radio frequency power supplied to the upper electrode 13d is efficiently coupled to the plasma in the plasma processing space 10s. Furthermore, the radio frequency power supplied to the upper electrode 13d is more efficiently coupled to the plasma below the shield member 42.

[0045] The inner wall portion 10t on the inside of the side wall 10a exposed to the plasma processing space 10s is made of a conductor. The inner wall portion 10t is made of, for example, silicon. The inner wall portion 10t can serve as a counter electrode for the shield member 42. At least a portion of the current applied to the shield member 42 flows to the side wall 10a via the plasma in the plasma processing space 10s and the inner wall portion 10t. In this way, because the inner wall portion 10t is made of a silicon-containing material, it is not necessary to separately place another member (device) serving as a counter electrode in the plasma processing space 10s.

[0046] As shown in FIG. 3 , the ring assembly 112 includes a plurality of annular members, including an edge ring ER and a cover ring CR. The edge ring ER is provided to improve etching uniformity. In this embodiment, the edge ring ER is made of a material appropriately selected depending on the material of the film to be etched, and may be made of, for example, a silicon-containing material. The edge ring ER may be included in the exposed portion of the substrate support 11.

[0047] The covering ring CR is an insulator, is supported on the upper surface of the ceramic member 1111a, and extends along the outer periphery of the edge ring ER. The covering ring CR has, for example, an annular shape that surrounds the periphery of the edge ring ER. The covering ring CR is made of an insulating material, such as quartz or a ceramic such as alumina. The covering ring CR may be composed of multiple dielectric components. The covering ring CR may not be included in the exposed portion of the substrate support 11.

[0048] The gas supply unit 20 is configured to supply a carbon-containing gas into the plasma processing space 10s in the plasma processing chamber 10 of the plasma processing apparatus 1. Hereinafter, the "carbon-containing gas" may also be referred to as a precoat gas. For example, when plasma is generated to form a coating on an exposed portion, the gas supply unit 20 supplies the precoat gas.

[0049] The precoat gas is a gas containing at least one selected from the group consisting of a hydrocarbon gas, a hydrofluorocarbon gas, and a fluorocarbon gas. The hydrocarbon gas (CH-based gas) is a gas containing C and H, such as CH ４ Gas, C ２ H ６ Fluorocarbon gas (CF-based gas) is a gas containing C and F, for example, C ４ F ８ Gas, C ５ F ８ Gas, C ４ F ６ Hydrofluorocarbon gas (CHF-based gas) is a gas containing C, H, and F, such as CHF ３ Gas, CH ２ F ２ Gas, etc.

[0050] The precoat gas supplied from the gas supply unit 20 may further contain an inert gas. The inert gas may include, for example, a noble gas such as Ar gas. The inert gas may be N ２ It may contain a gas.

[0051] Furthermore, the gas supply unit 20 is configured to supply a cleaning gas for cleaning the portion exposed to the plasma processing space 10s. For example, the gas supply unit 20 supplies the cleaning gas when cleaning the surface of the portion exposed to the plasma processing space 10s. The cleaning gas, which will be described later, is, for example, sulfur hexafluoride (SF ６ ) gas and oxygen (O ２ ) gas.

[0052] Various embodiments of the plasma processing method according to the present disclosure will be described below.

[0053] FIG. 4 is a flowchart showing a plasma processing method (hereinafter also referred to as "method MT1") according to an embodiment. As shown in FIG. 4, method MT1 includes a film formation method MT2 (hereinafter also referred to as "method MT2"). Method MT2 includes a step ST11 of providing a substrate, a step ST12 of adjusting the pressure, a step ST13 of supplying a precoat gas, a step ST14 of generating plasma, and a step ST15 of supplying a bias signal. Method MT2 may include a step ST16 after step ST15 of determining whether a predetermined condition is satisfied. Method MT1 includes method MT2, a step ST17 of performing plasma processing, and a step ST18 of performing cleaning.

[0054] In step ST11, the substrate W is carried into the plasma processing space 10s of the plasma processing apparatus 1 by a transport device and placed on the substrate support 11.

[0055] In the method MT1, step ST12 is then performed. In step ST12, the control unit 2 controls the exhaust system 40 to adjust the pressure in the plasma processing space 10s to less than 50 mTorr. By controlling the exhaust system 40, exhaust is performed and the pressure in the plasma processing space 10s is adjusted to less than 50 mTorr (less than 6.7 Pa). The exhaust system 40 may also adjust the pressure in the plasma processing space 10s to less than 30 mTorr (less than approximately 4.0 Pa).

[0056] Next, in the method MT1, step ST13 is performed. In step ST13, the controller 2 controls the gas supply unit 20 to supply a carbon-containing gas into the plasma processing space 10s in the plasma processing chamber 10 of the plasma processing apparatus 1. The gas supply unit 20 supplies a precoat gas into the plasma processing space 10s via the shower head 13.

[0057] In the method MT1, step ST14 is performed during the period in which step ST13 is being performed. In step ST14, the control unit 2 controls the first RF generator 31a to generate plasma from the precoat gas in the plasma processing space 10s while the precoat gas is being supplied, and to form coatings 61-63 on the portions (exposed portions) exposed to the plasma processing space 10s. To generate plasma in the plasma processing chamber 10 of the plasma processing apparatus 1, a source RF signal is generated in the first RF generator 31a and supplied to the upper electrode 13d. In step ST14, plasma is generated from the precoat gas in the plasma processing space 10s supplied in step ST13 by supplying high-frequency power using the source RF signal.

[0058] In the method MT1, step ST15 is performed during the period in which step ST14 is being performed. In step ST15, during the period in which step ST14 is being performed, the control unit 2 controls the second RF generator 31b and / or the first DC generator 32a and / or the second DC generator 32b to supply at least one bias signal to the exposed portion. In one embodiment, a bias RF signal may be generated in the second RF generator 31b, and the bias RF signal may be supplied as a bias signal to the lower electrode of the substrate support 11. The power level of the bias RF signal supplied to the substrate support 11 in step ST15 may be 500 W or more. Alternatively, in step ST15, the first DC signal from the first DC generator 32a may be supplied as a bias signal to the lower electrode of the substrate support 11. By supplying the bias signal to the substrate support 11 in step ST15, ions are attracted from the plasma toward the substrate support 11.

[0059] Furthermore, in process ST15, a second DC signal may be generated in the second DC generating unit 32b and applied as a bias signal to the shield member 42 via the DC connecting unit 48. The absolute value of the voltage level of the second DC signal (direct current voltage or voltage pulse) applied to the shield member 42 in process ST15 may be 100 V or more. In process ST15, ions are attracted from the plasma toward the shield member 42 by the application of the second DC signal.

[0060] As described above, while plasma is being generated from the carbon-containing precoat gas in step ST14, a bias signal is supplied in step ST15. As a result, as shown in FIG. 3 , a first coating 61, a second coating 62, and a third coating 63 are formed in the exposed portions. The first coating 61 is formed on the exposed portion of the ceiling portion 14, on the surface of the upper electrode 13d and / or the shield member 42. The second coating 62 is formed on the surface of the inner wall portion 10t of the side wall 10a. The third coating 63 is formed on the surface of the edge ring ER.

[0061] In the method MT1, step ST16 is then performed. In step ST16, after steps ST14 and ST15 have been performed, the control unit 2 controls each unit of the plasma processing apparatus 1 so that plasma processing is performed on the substrate W in the plasma processing space 10s. For example, etching is performed on the substrate W in the plasma processing space 10s. After the plasma processing is performed, the substrate W is unloaded from the substrate support 11 to outside the plasma processing space 10s by the transport device.

[0062] In the method MT1, step ST18 is then performed. In step ST18, after step ST17, the control unit 2 controls each unit of the plasma processing apparatus 1 to clean the exposed portion. The gas supply unit 20 supplies a cleaning gas into the plasma processing space 10s. To generate plasma in the plasma processing chamber 10, a source RF signal is generated in the first RF generation unit 31a and supplied to the upper electrode 13d. By supplying high-frequency power by the source RF signal, plasma is generated from the cleaning gas in the plasma processing space 10s supplied from the gas supply unit 20. The plasma generated from the cleaning gas cleans the surface of the exposed portion in the plasma processing chamber 10. After a predetermined time has elapsed, the gas supply unit 20 stops supplying the cleaning gas. This completes the method MT1.

[0063] The first coating 61, the second coating 62, and the third coating 63 formed in steps ST14 and ST15 of the method MT1 are conductive, hard, and high-density films. When a negative DC voltage having an absolute value of 100 V or more is applied to the upper electrode 13 d and / or the shield member 42 by the second DC signal, the conductive first coating 61 is formed. By applying the DC voltage to the upper electrode 13 d and / or the shield member 42, the resistance value is reduced compared to when the DC voltage is not applied to the upper electrode 13 d and / or the shield member 42, and a hard and high-density first coating 61 is formed. Furthermore, in step ST15, by supplying a bias high-frequency signal having a power level of 500 W or more by the bias RF signal to the lower electrode while the DC voltage is applied, the first coating 61 becomes a harder and higher-density film. Furthermore, in process ST12, by adjusting the pressure in the plasma processing space 10s to less than 50 mTorr (less than 6.7 Pa), a first coating 61 is formed with a reduced resistance value compared to when the pressure in the plasma processing space 10s is 50 mTorr or more.

[0064] The second coating 62 and the third coating 63 are formed by applying a DC voltage by the second DC signal similar to that described above, and also supplying a bias RF signal having a power level of 500 W or more by a bias RF signal to the lower electrode. By applying a DC voltage and supplying a bias RF signal, the resistance of the second coating 62 and the third coating 63 is reduced, and the second coating 62 and the third coating 63 are formed with higher density than when the DC voltage and the bias RF signal are not applied. Furthermore, by adjusting the pressure in the plasma processing space 10s to less than 50 mTorr in step ST12, the second coating 62 and the third coating 63 are formed with lower resistance than when the pressure in the plasma processing space 10s is 50 mTorr or more. It has been confirmed that the third coating 63 is formed even when the pressure in the plasma processing space 10s is adjusted to between 50 mTorr and 100 mTorr (less than 13.4 Pa), but the film formation rate saturates at 50 mTorr.

[0065] The first coating 61, the second coating 62, and the third coating 63 are amorphous (non-crystalline) films. That is, the crystalline structure of the carbon contained in the first coating 61, the second coating 62, and the third coating 63 is composed of a hybrid orbital d of sp3 and sp2. The first coating 61, the second coating 62, and the third coating 63 are harder and denser than graphite films and more conductive than diamond films.

[0066] If the first coating 61 is not formed on the upper electrode 13d and / or the shield member 42, there will be no counter electrode for the DC voltage, and therefore the DC voltage may not be applied (no current may flow) to the upper electrode 13d and the shield member 42. Furthermore, if the first coating 61 is not formed on the upper electrode 13d and / or the shield member 42, the DC voltage may not be stable, and arcing marks may be formed on the upper electrode 13d. Because the first coating 61 is a conductive film, the DC voltage applied to the upper electrode 13d and / or the shield member 42 is appropriately and stably applied, and the formation of arcing marks on the upper electrode 13d can be suppressed.

[0067] The first coating 61, the second coating 62, and the third coating 63 cover the exposed portions, namely, the surface of the upper electrode 13 d, the surface of the shield member 42, the surface of the inner wall portion 10 t, and the surface of the edge ring ER. The first coating 61, the second coating 62, and the third coating 63 are formed as hard films, which prevents the coatings from peeling off and prevents reaction products from adhering as particles to the surfaces of the exposed portions.

[0068] In the plasma processing method MT1, film formation method MT2, and plasma processing apparatus 1 described above, plasma is generated in step ST14 while a precoat gas is supplied in step ST13. In step ST15, at least one bias signal is supplied to the exposed portion, thereby forming a conductive coating on the exposed portion. This coating can reduce the possibility of arcing marks being formed on the exposed portion covered by the coating and suppress the adhesion of reaction products as particles. Therefore, the plasma processing method MT1, film formation method MT2, and plasma processing apparatus 1 can protect the portion exposed to the plasma processing space 10s (exposed portion).

[0069] The exposed portion includes the upper electrode 13d and / or the shield member 42. When a DC voltage is applied to the upper electrode 13d and / or the shield member 42 in step ST15, at least a first coating 61 is formed on the upper electrode 13d and the shield member 42. When a DC voltage of 100 V or more is applied to the upper electrode 13d and / or the shield member 42, a first coating 61 with higher conductivity, harderness, and higher density is formed. By forming the first coating 61, the DC voltage applied to the upper electrode 13d and / or the shield member 42 is stabilized when a plasma process such as step ST17 is performed, and the formation of arcing marks on the upper electrode 13d is suppressed. Furthermore, by forming the hard first coating 61, peeling of the first coating 61 is suppressed, and reaction products can be suppressed from adhering as particles to the surfaces of the upper electrode 13d and the shield member 42.

[0070] The exposed portion also includes the substrate support 11. When a bias RF signal is supplied to the substrate support 11 in step ST15, a first coating 61 is formed on the upper electrode 13d and the shield member 42. When a DC voltage is applied to the upper electrode 13d and / or the shield member 42 in step ST15 along with the supply of the bias RF signal, a second coating 62 is formed on the inner wall 10t, and a third coating 63 is formed on the edge ring ER. When a RF power of 500 W or more is supplied to the substrate support 11 by the bias RF signal, the first coating 61, the second coating 62, and the third coating 63 are formed, which are more conductive, harder, and denser. By forming the first coating 61, the DC voltage applied to the upper electrode 13d and / or the shield member 42 is stabilized when a plasma process such as step ST17 is performed, and the formation of arcing marks on the upper electrode 13d is suppressed. Furthermore, by forming the first coating 61, the second coating 62, and the third coating 63, it is possible to prevent reaction products from adhering as particles to the surface of each exposed portion when plasma processing such as step ST17 is performed.

[0071] Furthermore, when the pressure is high in step ST12, the possibility of ions colliding with neutral particles increases, making it difficult for ions to be attracted. By creating a state in which ions that maintain their energy without colliding with neutral particles are attracted, a higher density film can be formed on the exposed portions. Therefore, by setting the pressure to less than 50 mTorr, the possibility of ions colliding with neutral particles can be reduced, and a state in which ions that maintain their energy can be attracted can be created. Therefore, by adjusting the pressure in the plasma processing space 10s to less than 50 mTorr (less than 6.7 Pa) under the control of the control unit 2 in step ST12, conductive, hard, and high-density first coatings 61, second coatings 62, and third coatings 63 can be formed. Furthermore, by adjusting the pressure in the plasma processing space 10s to less than 30 mTorr (less than 4.0 Pa) under the control of the control unit 2 in step ST12, it is possible to further suppress the adhesion of reaction products as particles to the exposed portions.

[0072] Furthermore, in step ST13, the precoat gas supplied from the gas supply unit 20 includes a hydrocarbon gas, a hydrofluorocarbon gas, a fluorocarbon gas, or a combination thereof. Since the precoat gas is a gas containing carbon, when plasma is generated from the precoat gas and a coating is formed on the exposed portions in steps ST14 and ST15, the coating has conductivity. This allows the formation of a conductive first coating 61, stabilizes the DC voltage applied to the upper electrode 13 d and / or the shield member 42, and suppresses the formation of arcing marks on the upper electrode 13 d.

[0073] Furthermore, since the precoat gas further contains an inert gas, the partial pressure of the carbon-containing gas and the partial pressure of the inert gas can be adjusted, so that the pressure in the plasma processing space 10s can be sufficiently reduced when adjusting the pressure in step ST12.

[0074] The first coating 61, the second coating 62, and the third coating 63 are amorphous films. Examples of carbon-containing materials include graphite and diamond. Graphite has sp2 orbitals and is a conductive conductor, but has low hardness and density. On the other hand, diamond has sp3 orbitals and is a non-conductive insulator, but has high hardness and density. From the viewpoint of stably passing DC voltage power and suppressing coating peeling, a coating structure that is conductive yet has high hardness and density is required. The first coating 61, the second coating 62, and the third coating 63 are amorphous films, and therefore have hybrid orbitals of sp3 and sp2 orbitals, and have a structure that is conductive yet has high hardness and density. This allows DC voltage power to flow stably and suppresses coating peeling.

[0075] Furthermore, in step ST11, the substrate W is placed on the substrate support part 11, thereby suppressing the influence of plasma and particles on the substrate support part 11. Note that step ST11 does not necessarily have to be performed.

[0076] The plasma processing apparatus 1 may also have a plurality of DC connection units 48. That is, the DC connection units 48 may be connected to the upper electrode 13d so that the second DC signal is applied directly to the upper electrode 13d without passing through the shield member 42. In this case, the second DC signal may be applied to each of the upper electrode 13d and the shield member 42.

[0077] Various exemplary embodiments have been described above. However, the present invention is not limited to the above exemplary embodiments and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements of different embodiments may be combined to form other embodiments. For example, in step ST15, the second RF generator 31b may not generate a bias RF signal, and high-frequency power from the bias RF signal may not be supplied to the lower electrode. Even in this case, the first coating 61 is formed on at least the exposed portion of the ceiling portion 14. For example, the upper electrode 13d may be electrically connected to the second DC generator 32b. Even in this case, the first coating 61 is formed on at least the exposed portion of the ceiling portion 14.

[0078] Hereinafter, a plasma processing apparatus according to another exemplary embodiment adopted in the plasma processing apparatus will be described with reference to FIG. 5. FIG. 5 is a diagram for explaining a plasma processing apparatus according to another exemplary embodiment. The plasma processing apparatus 1A according to the exemplary embodiment shown in FIG. 5 differs from the plasma processing apparatus 1 in that it includes a first insulating member 41A and a third insulating member 44. That is, the plasma processing apparatus 1A differs from the plasma processing apparatus 1 in that it includes the third insulating member 44. The first insulating member 41A is an example of an insulating portion.

[0079] The first insulating member 41A corresponds to the first insulating portion 46 of the plasma processing apparatus 1. The first insulating member 41A is provided between the upper electrode 13d and the plasma processing chamber 10. The first insulating member 41A electrically separates the upper electrode 13d from the plasma processing chamber 10. The first insulating member 41A is provided on the outer side (sidewall 10a side) of the upper electrode 13d. The first insulating member 41A has a substantially ring shape and extends in the circumferential direction to surround the upper electrode 13d. The first insulating member 41A is made of an insulator such as quartz.

[0080] The plasma processing apparatus 1A further includes at least one third insulating member 44. The third insulating member 44 corresponds to the second insulating portion 47 of the plasma processing apparatus 1. The at least one third insulating member 44 is provided outside the first insulating member 41 and on the shield member 42. The at least one third insulating member 44 is interposed between the plasma processing chamber 10 and the shield member 42. In the example shown in FIG. 5, the at least one third insulating member 44 is provided so that its lower surface contacts the outer upper surface of the shield member 42. The at least one third insulating member 44 is provided between the shield member 42 and the second support 43. The at least one third insulating member 44 is, for example, a plate-shaped member having a substantially annular shape. The at least one third insulating member 44 is formed from an insulator such as insulating ceramics, quartz, or metal oxide.

[0081] Even when the plasma processing method MT1 and the film forming method MT2 are performed in the plasma processing apparatus 1A, the same effects are achieved as when the plasma processing method MT1 and the film forming method MT2 are performed in the above-mentioned plasma processing apparatus 1.

[0082] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E35] below.

[0083] [E1] A method for manufacturing a plasma processing apparatus, comprising: (a) supplying a carbon-containing gas into a plasma processing space in a chamber of a plasma processing apparatus; (b) generating plasma from the gas in the plasma processing space during the process (a) to form a film on a portion exposed to the plasma processing space; and (c) supplying at least one bias signal to the portion during the process (b), wherein the plasma processing apparatus comprises: an electrically grounded chamber providing the plasma processing space; a substrate support provided in the chamber and configured to support a substrate; an upper electrode provided above the substrate support, the upper electrode being part of a ceiling provided to close an opening of the chamber above the plasma processing space, the upper electrode being configured to be able to apply high-frequency power to generate the plasma; an insulating portion provided between the upper electrode and the chamber to electrically isolate the upper electrode from the chamber; and a shielding member provided another part of the ceiling, the shielding member having electrical conductivity and made of a silicon-containing material, and extending from a periphery of the upper electrode to the chamber. At least a part of the portion is made of a conductor.

[0084] [E2] The method of forming a film according to [E1], wherein the plasma processing apparatus is such that the portion includes the upper electrode and / or the shield member, and in (c), a DC voltage is applied to the upper electrode and / or the shield member as the at least one bias signal.

[0085] [E3] The coating formation method according to [E2], wherein in (c), a negative DC voltage having an absolute value of 100 V or more is applied to the upper electrode and / or the shield member as the at least one bias signal.

[0086] [E4] The coating formation method according to any one of [E1] to [E3], wherein the portion includes the substrate support portion, and in (c), a bias high frequency signal is supplied to the substrate support portion as the at least one bias signal.

[0087] [E5] The coating formation method according to [E4], wherein in (c), the bias high frequency signal having a power level of 500 W or more is supplied to the substrate support part.

[0088] [E6] The coating formation method according to any one of [E1] to [E5], further comprising the step of adjusting the pressure in the plasma processing space to less than 6.7 Pa in (c).

[0089] [E7] The method for forming a coating according to any one of [E1] to [E6], wherein the gas includes at least one selected from the group consisting of a hydrocarbon gas, a hydrofluorocarbon gas, and a fluorocarbon gas.

[0090] [E8] The coating formation method according to any one of [E1] to [E7], wherein the gas further contains an inert gas.

[0091] [E9] The coating formation method according to [E8], wherein the inert gas includes a noble gas.

[0092] [E10] The method for forming a coating according to any one of [E1] to [E9], wherein the coating is an amorphous film.

[0093] [E11] A method for manufacturing a plasma processing apparatus, comprising: (a) supplying a carbon-containing gas into a plasma processing space in a chamber of a plasma processing apparatus; (b) generating plasma from the gas in the plasma processing space during the process (a) to form a film on a portion exposed to the plasma processing space; (c) supplying at least one bias signal to the portion while the process (b) is being performed; (d) performing plasma processing on a substrate in the plasma processing space after the process (b) is performed; and (e) cleaning the portion after the process (d), wherein the plasma processing apparatus comprises: a chamber that is electrically grounded and provides the plasma processing space; a substrate support member that is provided in the chamber and configured to support a substrate; an upper electrode that is part of a ceiling member that is provided to close an opening of the chamber above the plasma processing space and is configured to be able to apply high-frequency power to generate the plasma and is provided above the substrate support member; and an insulating member that is part of the ceiling member and is provided between the upper electrode and the chamber to electrically isolate the upper electrode from the chamber. a shield member that is another part of the ceiling portion, the shield member having electrical conductivity and made of a silicon-containing material, and that extends from a periphery of the upper electrode to the chamber, wherein at least a portion of the part is made of a conductor.

[0094] [E12] The plasma processing method according to [E11], wherein the portion includes the upper electrode and / or the shield member, and in (c), a DC voltage is applied to the upper electrode and / or the shield member as the at least one bias signal.

[0095] [E13] The plasma processing method according to [E12], wherein in (c), a negative DC voltage having an absolute value of 100 V or more is applied to the upper electrode and / or the shield member as the at least one bias signal.

[0096] [E14] The plasma processing method according to any one of [E11] to [E13], wherein the portion includes the substrate support portion, and in (c), a bias high frequency signal is supplied to the substrate support portion as the at least one bias signal.

[0097] [E15] The plasma processing method according to [E14], wherein in (c), the bias high frequency signal having a power level of 500 W or more is supplied to the substrate support part.

[0098] [E16] The plasma processing method according to any one of [E11] to [E15], wherein in (e), the coating formed on the portion is at least partially removed.

[0099] [E17] The plasma processing method according to any one of [E11] to [E16], wherein in (e), a cleaning gas containing a halogen-containing gas is supplied, and plasma is generated from the cleaning gas.

[0100] [E18] The plasma processing method according to any one of [E11] to [E17], further comprising, in (c), a step of adjusting the pressure in the plasma processing space to less than 6.7 Pa.

[0101] [E19] The plasma processing method according to any one of [E1] to [E18], wherein the gas includes at least one selected from the group consisting of a hydrocarbon gas, a hydrofluorocarbon gas, and a fluorocarbon gas.

[0102] [E20] The plasma processing method according to any one of [E11] to [E19], wherein the gas further contains an inert gas.

[0103] [E21] The plasma processing method according to [E20], wherein the inert gas includes a noble gas.

[0104] [E22] The plasma processing method according to any one of [E11] to [E21], wherein the coating is an amorphous film.

[0105] [E23] A plasma processing apparatus comprising: an electrically grounded chamber providing a plasma processing space; a gas supply unit configured to supply a gas into the chamber; a substrate support unit provided in the chamber and configured to support a substrate; an upper electrode, which is a part of a ceiling provided to close an opening of the chamber above the plasma processing space, configured to be able to apply high-frequency power and provided above the substrate support unit; an insulating unit, which is a part of the ceiling and provided between the upper electrode and the chamber to electrically separate the upper electrode from the chamber; a shield member, which is another part of the ceiling, has conductivity, is made of a silicon-containing material and extends from a periphery of the upper electrode to the chamber; a plasma generating unit configured to generate plasma from a gas; at least one bias generating unit configured to supply at least one bias signal to a portion exposed to the plasma processing space; and a controller, wherein the portion is made of a conductor, and the controller controls the gas supply unit, the plasma generating unit, and the at least one bias generating unit to: (a) supply a gas containing carbon from the gas supply unit into the plasma processing space; (b) generating plasma from the gas in the plasma processing space using the plasma generating unit while performing (a) and forming a coating on the portion; (c) supplying the at least one bias signal from the at least one bias generating unit to the portion while (b) is being performed; (d) performing plasma processing on a substrate in the plasma processing space after performing (b) and (c); and (e) cleaning the portion after performing (d).

[0106] [E24] The plasma processing apparatus according to [E23], wherein the control unit controls in (e) to at least partially remove the coating formed on the portion.

[0107] [E25] The plasma processing apparatus according to [E23] or [E24], wherein the control unit controls in (e) to supply a cleaning gas containing a halogen-containing gas and generate plasma from the cleaning gas.

[0108] [E26] A plasma processing apparatus comprising: an electrically grounded chamber providing a plasma processing space; a gas supply unit configured to supply a gas into the chamber; a substrate support unit provided in the chamber and configured to support a substrate; an upper electrode, which is a part of a ceiling provided to close an opening of the chamber above the plasma processing space, configured to be able to apply high-frequency power and provided above the substrate support unit; an insulating unit, which is a part of the ceiling and provided between the upper electrode and the chamber to electrically separate the upper electrode from the chamber; a shield member, which is another part of the ceiling, which is conductive, made of a silicon-containing material, and extends from a periphery of the upper electrode to the chamber; a plasma generation unit configured to generate plasma from a gas; at least one bias generation unit configured to supply at least one bias signal to a portion exposed to the plasma processing space; and a control unit, wherein the portion is made of a conductor, and the control unit controls the gas supply unit, the plasma generation unit, and the at least one bias generation unit to perform the following steps: (a) supplying a gas containing carbon from the gas supply unit into the plasma processing space; (b) generating plasma from the gas in the plasma processing space using the plasma generating unit while (a) is being performed, and forming a coating on the portion; and (c) supplying the at least one bias signal from the at least one bias generating unit to the portion while (b) is being performed.

[0109] [E27] The plasma processing apparatus according to any one of [E23] to [E26], wherein the portion includes the upper electrode and / or the shield member, and the control unit controls the at least one bias generation unit in (c) to apply a DC voltage to the upper electrode and / or the shield member as the at least one bias signal.

[0110] [E28] The plasma processing apparatus according to [E27], wherein in (c), the control unit controls the at least one bias generation unit to apply a DC voltage of 100 V or more to the upper electrode and / or the shield member as the at least one bias signal.

[0111] [E29] The plasma processing apparatus according to any one of [E23] to [E28], wherein the portion includes the substrate support portion, and the control portion controls the at least one bias generation portion in (c) to supply a bias high frequency signal to the substrate support portion as the at least one bias signal.

[0112] [E30] The plasma processing apparatus according to [E29], wherein in (c), the control unit controls to supply high frequency power of 500 W or more to the substrate support unit by a bias high frequency signal as the at least one bias signal.

[0113] [E31] The plasma processing apparatus according to any one of [E23] to [E30], further comprising, in (c), a step of adjusting the pressure in the plasma processing space to less than 6.7 Pa.

[0114] [E32] The plasma processing apparatus according to any one of [E23] to [E31], wherein the gas includes at least one selected from the group consisting of a hydrocarbon gas, a hydrofluorocarbon gas, and a fluorocarbon gas.

[0115] [E33] The plasma processing apparatus according to any one of [E23] to [E32], wherein the gas further contains an inert gas.

[0116] [E34] The plasma processing apparatus according to [E33], wherein the inert gas includes a noble gas.

[0117] [E35] The plasma processing apparatus according to any one of [E23] to [E34], wherein the coating is an amorphous film.

[0118] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

[0119] 1, 1A... plasma processing apparatus, 2... control unit, 10... plasma processing chamber, 10a... side wall, 10s... plasma processing space, 10t... inner wall portion, 11... substrate support portion, 12... plasma generation portion, 13... shower head, 13d... upper electrode, 13e... top plate, 13f... first support, 14... top portion, 30... power supply, 31... RF power supply, 31a... first RF generation portion, 32... DC power supply, 32b... second DC generation portion part, 41, 41A...first insulating member, 42...shield member, 43...second support, 44...third insulating member, 45...second insulating member, 46...first insulating portion, 47...second insulating portion, 48...DC connection portion, 61...first coating, 62...second coating, 63...third coating, 111...main body portion, 112...ring assembly, 1110...base, 1111...electrostatic chuck, ER...edge ring, W...substrate.

Claims

1. A method for manufacturing a plasma processing apparatus, comprising: (a) supplying a carbon-containing gas into a plasma processing space in a chamber of a plasma processing apparatus; (b) generating a plasma from the gas in the plasma processing space while (a) is being performed, to form a coating on a portion exposed to the plasma processing space; and (c) supplying at least one bias signal to the portion while (b) is being performed, the plasma processing apparatus comprising: a chamber that is electrically grounded and provides the plasma processing space; a substrate support section that is provided in the chamber and configured to support a substrate; an upper electrode that is a part of a ceiling section that is provided to close an opening of the chamber above the plasma processing space, the upper electrode being configured to be able to apply high-frequency power to generate the plasma and provided above the substrate support section; an insulating section that is a part of the ceiling section and is provided between the upper electrode and the chamber to electrically isolate the upper electrode and the chamber; and a shielding member that is another part of the ceiling section, the shielding member being conductive and formed of a silicon-containing material, and extending from a periphery of the upper electrode to the chamber. At least a portion of the portion is made of a conductor.

2. The coating formation method according to claim 1, wherein the portion includes the upper electrode and / or the shielding member, and in (c), a DC voltage is applied to the upper electrode and / or the shielding member as the at least one bias signal.

3. The coating method according to claim 2, wherein in (c), a negative DC voltage having an absolute value of 100 V or more is applied to the upper electrode and / or the shield member as the at least one bias signal.

4. A method for forming a coating according to claim 1 or 2, wherein the portion includes the substrate support portion, and in (c), a bias high frequency signal is supplied to the substrate support portion as the at least one bias signal.

5. The method of forming a coating according to claim 4, wherein in (c), the bias high frequency signal having a power level of 500 W or more is supplied to the substrate support.

6. The method for forming a coating according to claim 1 or 2, further comprising the step of adjusting the pressure in the plasma processing space to less than 6.7 Pa in (c).

7. The method of forming a coating according to claim 1 or 2, wherein the gas includes at least one selected from the group consisting of a hydrocarbon gas, a hydrofluorocarbon gas, and a fluorocarbon gas.

8. The method for forming a coating according to claim 1 or 2, wherein the gas further comprises an inert gas.

9. The method of claim 8, wherein the inert gas comprises a noble gas.

10. The method of forming a coating according to claim 1 or 2, wherein the coating is an amorphous film.

11. A method for manufacturing a plasma processing apparatus comprising: (a) supplying a gas containing carbon into a plasma processing space in a chamber of a plasma processing apparatus; (b) generating plasma from the gas in the plasma processing space while (a) is being performed, to form a coating on a portion exposed to the plasma processing space; (c) supplying at least one bias signal to the portion while (b) is being performed; (d) performing plasma processing on a substrate in the plasma processing space after (b) and (c) are performed; and (e) cleaning the portion after (d), wherein the plasma processing apparatus comprises: a chamber that is electrically grounded and provides the plasma processing space; a substrate support section that is provided in the chamber and configured to support a substrate; an upper electrode that is part of a ceiling section that is provided to close an opening of the chamber above the plasma processing space, is configured to be able to apply high-frequency power to generate the plasma, and is provided above the substrate support section; and an insulating section that is part of the ceiling section and is provided between the upper electrode and the chamber to electrically isolate the upper electrode and the chamber. a shield member that is another part of the ceiling portion, the shield member being conductive and made of a silicon-containing material, and extending from a periphery of the upper electrode to the chamber, wherein at least a portion of the part is composed of a conductor.

12. The plasma processing method according to claim 11, wherein the portion includes the upper electrode and / or the shield member, and in (c), a DC voltage is applied to the upper electrode and / or the shield member as the at least one bias signal.

13. The plasma processing method according to claim 11 or 12, wherein the portion includes the substrate support portion, and in (c), a bias high frequency signal is supplied to the substrate support portion as the at least one bias signal.

14. The plasma processing method according to claim 11 or 12, wherein in (e), the coating formed on the portion is at least partially removed.

15. The plasma processing method according to claim 11, wherein in (e), a cleaning gas containing a halogen-containing gas is supplied, and plasma is generated from the cleaning gas.

16. A plasma processing apparatus comprising: a chamber which is electrically grounded and provides a plasma processing space; a gas supply unit configured to supply a gas into the chamber; a substrate support unit provided in the chamber and configured to support a substrate; an upper electrode which is a part of a ceiling provided to close an opening of the chamber above the plasma processing space, configured to be able to apply high frequency power, and provided above the substrate support unit; an insulating unit which is a part of the ceiling and provided between the upper electrode and the chamber to electrically isolate the upper electrode and the chamber; a shield member which is another part of the ceiling, has conductivity, is formed of a silicon-containing material, and extends from a periphery of the upper electrode to the chamber; a plasma generating unit configured to generate plasma from a gas; at least one bias generating unit configured to supply at least one bias signal to a portion exposed to the plasma processing space; and a control unit, wherein the portion is made of a conductor, and the control unit controls the gas supply unit, the plasma generating unit, and the at least one bias generating unit to perform the following steps: (a) supplying a gas containing carbon from the gas supply unit into the plasma processing space; (b) while performing (a), generating plasma from the gas in the plasma processing space using the plasma generating unit, and forming a coating on the portion; (c) while (b) is being performed, supplying the at least one bias signal from the at least one bias generating unit to the portion; (d) after performing (b), performing plasma processing on a substrate in the plasma processing space; and (e) after performing (d).

17. The plasma processing apparatus of claim 16, wherein the portion includes the upper electrode and / or the shielding member, and the control unit controls the at least one bias generating unit in (c) to apply a DC voltage to the upper electrode and / or the shielding member as the at least one bias signal.

18. A plasma processing apparatus as described in claim 16 or 17, wherein the portion includes the substrate support portion, and the control portion controls the at least one bias generating portion in (c) to supply a bias high frequency signal to the substrate support portion as the at least one bias signal.

Images