Adhesive film for semiconductor

Abstract

An adhesive film for a semiconductor according to an embodiment of the present invention comprises: a base layer; a conductive layer formed on the base layer; and an adhesive layer formed on the conductive layer, wherein when a voltage of 1 kV is applied, the surface resistance is in the range of 1x1011 to 1x1013 Ω / sq and the thickness of the adhesive layer is 15 to 50µm. The adhesive film for a semiconductor according to the present invention enables a semiconductor wafer to be stably fixed to an electrostatic chuck when the adhesive film for a semiconductor is adhered to a semiconductor, whilst simulatneously enabling the wafer to be protected.

Description

Semiconductor adhesive film

[0001] The present invention relates to a semiconductor adhesive film, and more specifically, to a semiconductor adhesive film that has a certain range of electrical properties when adhered to a semiconductor wafer, and at the same time can minimize the occurrence of burrs or bubbles that may occur when adhered to a semiconductor wafer.

[0002] Recently, there has been a growing demand for thinner and smaller semiconductor devices and their packaging. Consequently, as semiconductor wafers become thinner, electrostatic chucks (ESCs) are increasingly utilized to effectively secure them. An ESC is a device used to secure wafers during semiconductor manufacturing processes. It uses electrical force to secure the wafer. Unlike conventional methods such as physical clamps or vacuum suction, it minimizes contact damage and provides consistent holding force.

[0003] To secure a semiconductor wafer in an electrostatic chuck, a semiconductor adhesive film can be adhered to the wafer. To ensure that the wafer is electrically secured in the electrostatic chuck, the semiconductor adhesive film must possess suitable electrical properties. Furthermore, it must minimize the formation of burrs and bubbles that may occur during adhesion to the semiconductor wafer.

[0004] [Prior Art Literature]

[0005] [Patent Document]

[0006] (Patent Document 1) KR 10-2208071 B1

[0007] The present invention is intended to solve the above problems and provides a semiconductor adhesive film including an adhesive layer formed on a conductive layer and having electrical properties within a predetermined range.

[0008] In addition, the present invention aims to provide a semiconductor adhesive film that minimizes the occurrence of burrs or voids that may occur during adhesion to a semiconductor wafer.

[0009] A semiconductor adhesive film according to one embodiment of the present invention includes a substrate layer, a conductive layer formed on the substrate layer, and an adhesive layer formed on the conductive layer, and the semiconductor adhesive film has a surface resistance of 1 × 10 when a voltage of 1 kV is applied. 11 1 × 10 13 It has a range of Ω / sq, and the thickness of the adhesive layer is 15 to 50 ㎛.

[0010] In a semiconductor adhesive film according to one embodiment of the present invention, the thickness of the adhesive layer may be formed to be 50% or less of the thickness of the semiconductor adhesive film.

[0011] In a semiconductor adhesive film according to one embodiment of the present invention, the thickness of the conductive layer can be formed to be 0.03 to 3 ㎛.

[0012] A semiconductor adhesive film according to one embodiment of the present invention may additionally include a release film formed on the adhesive layer.

[0013] In a semiconductor adhesive film according to one embodiment of the present invention, the adhesive layer can be laminated to the entire semiconductor wafer within 1.0 s from the time when the center of the semiconductor adhesive film is pressed and the adhesive layer comes into contact with the semiconductor wafer.

[0014] In a semiconductor adhesive film according to one embodiment of the present invention, the adhesive layer may include at least one selected from the group consisting of a rubber compound, an acrylic compound, a silicone compound, and a urethane compound.

[0015] In a semiconductor adhesive film according to one embodiment of the present invention, the thickness of the adhesive layer is 15 to 35 ㎛ or 15 to 25 ㎛.

[0016] In a semiconductor adhesive film according to one embodiment of the present invention, the thickness of the substrate layer is 25 to 100 ㎛, 33 to 70 ㎛, or 38 to 50 ㎛.

[0017] The semiconductor adhesive film according to the present invention enables a semiconductor wafer to be stably fixed to an electrostatic chuck when adhered to a semiconductor, and at the same time protects the wafer.

[0018] The semiconductor adhesive film according to the present invention minimizes burrs and bubbles that may occur when a semiconductor is adhered.

[0019] FIG. 1 is a cross-sectional view of a semiconductor adhesive film according to one embodiment of the present invention;

[0020] FIG. 2 is a cross-sectional view of a semiconductor adhesive film according to another embodiment of the present invention;

[0021] FIG. 3 is a diagram showing a state in which a semiconductor adhesive film according to one embodiment of the present invention is adhered to a semiconductor wafer;

[0022] FIG. 4 is a diagram showing a state in which a semiconductor adhesive film according to one embodiment of the present invention is bonded to the entire semiconductor wafer;

[0023] FIG. 5 is a diagram showing a state in which a semiconductor adhesive film according to one embodiment of the present invention is not bonded to a semiconductor wafer;

[0024] FIG. 6 is a photograph of equipment for performing a burr test on a semiconductor adhesive film according to an embodiment of the present invention; and

[0025] FIGS. 7 to 12 are photographs of a semiconductor adhesive film after a burr test according to one embodiment of the present invention.

[0026] Hereinafter, various embodiments of the present invention will be described with reference to the accompanying drawings. It should be understood that the present invention is not limited to specific embodiments, but rather encompasses various modifications, equivalents, and / or alternatives of the embodiments of the present invention. In connection with the description of the drawings, similar reference numerals may be used for similar components.

[0027] In this document, the expressions “has”, “may have”, “includes”, or “may include” indicate the presence of a feature (e.g., a number, function, operation, or component such as a part), but do not exclude the presence of additional features.

[0028] In this document, the expressions "A or B," "at least one of A and / or B," or "one or more of A and / or B" can include all possible combinations of the listed items. For example, "A or B," "at least one of A and B," or "at least one of A or B" can all refer to cases where (1) at least one A is included, (2) at least one B is included, or (3) at least one A and at least one B are included.

[0029] The expression "configured to" as used herein can be used interchangeably with, for example, "suitable for", "having the capacity to", "designed to", "adapted to", "made to", or "capable of". The term "configured to" does not necessarily mean "specifically designed to".

[0030] The terms used in this document are used only to describe specific embodiments and may not be intended to limit the scope of other embodiments. The singular expression may include the plural expression unless the context clearly indicates otherwise. Terms used herein, including technical or scientific terms, may have the same meaning as commonly understood by those of ordinary skill in the art described in this document. Terms defined in general dictionaries among the terms used in this document may be interpreted as having the same or similar meaning in the context of the relevant technology, and shall not be interpreted in an idealized or overly formal sense unless explicitly defined in this document. In some cases, even if a term is defined in this document, it cannot be interpreted to exclude the embodiments of this document.

[0031] Accordingly, the configurations of the embodiments described in this specification are only some of the most preferred embodiments of the present invention and do not represent all of the technical ideas of the present invention, so it should be understood that there may be various equivalents and modified examples that can replace them at the time of filing this application.

[0032] Throughout the specification, whenever a part is said to “include” a component, this does not mean that it excludes other components, but rather that it may include other components, unless otherwise stated.

[0033] The objects, specific advantages, and novel features of the present invention described herein will become more apparent from the following detailed description and preferred embodiments thereof, taken in conjunction with the accompanying drawings. In this specification, reference numerals are given to components in each drawing, and it should be noted that, as far as possible, identical components are given the same numerals even if they are shown in different drawings. Furthermore, terms such as "one side," "the other side," "first," and "second" are used to distinguish one component from another, and the components are not limited by these terms. In the following description of the present invention, detailed descriptions of related known technologies that may unnecessarily obscure the gist of the present invention will be omitted.

[0034] Hereinafter, an embodiment of the present invention will be described in detail with reference to the attached drawings, and the same reference numerals indicate the same components.

[0035]

[0036] In this specification, “electrostatic chuck” refers to an Electrostatic Chuck (ESC), a device used to fix wafers or films (process tapes) in the semiconductor manufacturing process. This device can prevent various problems that may occur during the process by fixing the wafer using electrostatic force instead of physical methods. The electrostatic chuck has the principle of fixing the wafer using electrostatic force. This method generates electrostatic suction force by applying voltage between the wafer and the electrostatic chuck. Electrostatic chucks are generally designed with a monopolar or bipolar structure, and each structure can be distinguished by the number of electrodes.

[0037]

[0038] In this specification, “electrostatic chucking and reaction” refers to the phenomenon in which, when a semiconductor adhesive film described below is positioned near an electrostatic chuck and voltage is applied to the electrostatic chuck, mutual static electricity is generated between the semiconductor adhesive film and the electrostatic chuck, and the electrostatic chuck and the semiconductor adhesive film can be electrostatically attracted (chucking) by electrostatic attraction.

[0039]

[0040] A semiconductor adhesive film (1) according to one embodiment of the present invention includes a substrate layer (10), a conductive layer (20) formed on the substrate layer (10), and an adhesive layer (30) formed on the conductive layer (20), and has a surface resistance of 1 × 10 when a voltage of 1 kV is applied. 11 1 × 10 13 It has a range of Ω / sq, and the thickness of the adhesive layer (30) is 15 to 50 ㎛.

[0041] A semiconductor adhesive film (1) according to another embodiment of the present invention may additionally include a release film (40) formed on the adhesive layer (30).

[0042]

[0043] Referring to FIG. 1, a semiconductor adhesive film (1) according to one embodiment of the present invention is formed in a form in which a substrate layer (10), a conductive layer (20), and an adhesive layer (30) are laminated in that order.

[0044] The substrate layer (10) may be selected from the group consisting of polyethylene terephthalate, polyethylene, polyimide, acrylic resin, cycloolefin polymer, mixtures thereof, and copolymers thereof.

[0045] In addition, the semiconductor adhesive film (1) of the present invention may additionally include a release film (40) formed on the adhesive layer (30) as shown in FIG. 2.

[0046] When a voltage of 1 kV is applied to a semiconductor adhesive film (1) according to one embodiment of the present invention, the surface resistance is 1 × 10 11 1 × 10 13It may be Ω / sq. If it is less than the above range, the dielectric loss increases and the wafer (W) to which the semiconductor adhesive film (1) is adhered may not be fixed to the electrostatic chuck. Conversely, if it exceeds the above range, the dielectric loss decreases but the mobility of electrons decreases and the wafer (W) to which the semiconductor adhesive film (1) is adhered may not be fixed to the electrostatic chuck.

[0047] The main feature of the present invention is that it enables the film to be stably fixed to an electrostatic chuck by precisely controlling the electrical properties such as surface resistance, dielectric loss or dielectric constant of each layer and the semiconductor adhesive film (1) combining them.

[0048]

[0049] In the semiconductor adhesive film (1) according to one embodiment of the present invention, the thickness of the adhesive layer (30) is 15 to 35 ㎛ or 15 to 25 ㎛.

[0050]

[0051] And, the thickness of the adhesive layer (30) may be 15 to 50 ㎛, 15 to 35 ㎛, or 15 to 25 ㎛. If the thickness of the adhesive layer (30) is less than the above range, the dielectric loss increases, so that the wafer (W) to which the semiconductor adhesive film (1) is adhered may not be fixed to the electrostatic chuck. On the contrary, if the thickness of the adhesive layer (30) exceeds the above range, the dielectric loss decreases, so that the wafer (W) to which the semiconductor adhesive film (1) is adhered may not be fixed to the electrostatic chuck. In addition, if the thickness of the adhesive layer (30) exceeds the above range, the probability of burrs occurring when cutting the film (1) increases.

[0052]

[0053] In a semiconductor adhesive film (1) according to one embodiment of the present invention, the thickness of the adhesive layer can be formed to be 50% or less of the thickness of the semiconductor adhesive film.

[0054]

[0055] In addition, the thickness of the adhesive layer (30) may be formed to be 50% or less of the thickness of the semiconductor adhesive film (1). If the thickness of the adhesive layer (30) exceeds the above range, the flexibility of the adhesive layer (30) increases the overall flexibility of the film (1), thereby weakening the stiffness of the film (1), and thus, the probability of a void occurring when the film (1) is adhered to the wafer (W) increases.

[0056]

[0057] In the semiconductor adhesive film (1) according to one embodiment of the present invention, the thickness of the conductive layer (20) can be formed to be 0.03 to 3 ㎛.

[0058]

[0059] The conductive layer (20) may be selected from the group consisting of poly(3,4-ethylenedioxythiophene) (poly(3,4-ethylenedioxythiophene. PEDOT), poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate. PEDOT-PSS), carbon nanotubes (CNT), graphene, indium tin oxide (ITO), silver nanowires, and combinations thereof. The conductive layer (20) constituting the present invention is characterized in that it essentially requires transparency in addition to the electrical properties described above.

[0060] In addition, the conductive layer (20) can be formed by crosslinking a mixture of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane with aziridine. When forming an adhesive layer (30) on the conductive layer (20), a portion of the conductive layer (20) may be removed by a solvent that dissolves the materials constituting the adhesive layer (30). To prevent this, it is necessary to improve the solvent resistance of the conductive layer (20), and in the present invention, this is achieved by crosslinking with aziridine.

[0061] And, the weight ratio of polyurethane to poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT-PSS) of the conductive layer (20) may be 1:9, 1.5:8.5, or 3:7. If the PEDOT-PSS content is less than the above range, the surface resistance, dielectric loss, and dielectric constant conditions that can react with an electrostatic chuck cannot be satisfied, and on the contrary, if it exceeds the above range, the physical properties can be satisfied, but since there is little polyurethane, it cannot be sufficiently crosslinked with the aziridine crosslinking agent, so not only is the solvent resistance not secured, but it is also not desirable from an economical perspective.

[0062] And, the weight ratio of the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane mixture of the conductive layer (20) and aziridine may be 100:8 to 63, 100:10 to 63, or 100:12 to 63. If the weight ratio of aziridine is less than the above range, the carboxyl group of the water-dispersed polyurethane is not sufficiently crosslinked, and thus the solvent resistance is not secured. On the other hand, if it exceeds the above range, unreacted aziridine may migrate to the surface depending on time and temperature, which is economically undesirable.

[0063] In addition, the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and water-dispersed polyurethane mixture of the above-described conductive layer (20) may be a solution dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof.

[0064] In addition, the solution may further comprise a stabilizer selected from the group consisting of ethylene glycol, sorbitol and mixtures thereof.

[0065] And, the concentration of the poly(3,4-ethylenedioxythiophene) polystyrene sulfonate and polyurethane mixture dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol and mixtures thereof may be 0.8 to 1.2 wt% or 0.8 to 0.9 wt%. If the concentration of the solution is less than the above range, the particles of Pedot-PSS may come out to the surface, which may cause coating lines on the coating surface, and on the contrary, if it exceeds the above range, the solid content may decrease, which may increase the wet thickness, and the surface may become uneven due to the fluidity of the coating solution on the coating surface.

[0066] The thickness of the conductive layer (20) may be 0.03 to 3 ㎛. If the thickness of the conductive layer (20) is less than the above range, the surface resistance becomes high and the dielectric loss becomes low, so that the wafer (W) to which the semiconductor adhesive film (1) is adhered may not be fixed to the electrostatic chuck. If the thickness of the conductive layer (20) exceeds the above range, the surface resistance becomes low and the dielectric loss becomes high, so that the wafer (W) to which the semiconductor adhesive film (1) is adhered may not be fixed to the electrostatic chuck.

[0067] Additionally, the above-mentioned conductive layer (20) can be gravure coated on the substrate layer (10).

[0068] In addition, the conductive layer (20) can be dried with hot air at 60 to 100°C or 20 to 35 Hz for 30 to 90 seconds. If the drying time or drying temperature is below the above range, drying is insufficient, and curing or solvent volatilization is not completely achieved, which may affect electrical properties such as dielectric constant.

[0069]

[0070] In a semiconductor adhesive film (1) according to one embodiment of the present invention, the adhesive layer (30) may include at least one selected from the group consisting of a rubber compound, an acrylic compound, a silicone compound, and a urethane compound.

[0071]

[0072] In a semiconductor adhesive film (1) according to one embodiment of the present invention, the adhesive layer (30) may include at least one selected from the group consisting of a rubber compound, an acrylic compound, a silicone compound, and a urethane compound, and preferably may include a silicone compound.

[0073] The above silicone compound may be derived from a constituent unit of an organopolysiloxane of the chemical formula 1 below or a derivative thereof and a hydrogen siloxane copolymer of the chemical formula 2 below or a derivative thereof.

[0074] [Chemical Formula 1]

[0075]

[0076] Here, R1 and R8 are each independently one selected from the group consisting of hydrogen, alkyl and alkenyl, R2 to R7 are either hydrogen or alkyl, and n1 may be an integer of 5 to 200,000, preferably an integer of 500 to 100,000, and more preferably an integer of 1,000 to 50,000.

[0077]

[0078] [Chemical Formula 2]

[0079]

[0080] Here, the above R9 to R 18 At least one of them is hydrogen, and R9 to R 18 at Except for the hydrogen moiety, the remainder are each independently alkyl, wherein n2 is an integer from 1 to 200, and n3 is an integer from 1 to 100.

[0081] Preferably, the organopolysiloxane of the above chemical formula 1 or a derivative thereof is a polydimethylsiloxane containing vinyl groups at both terminals, and has a weight average molecular weight of 600,000 to 700,000, a number average molecular weight of 300,000 to 400,000, and the vinyl group content may be 0.02 to 0.2 mmol / g, 0.1 to 0.2 mmol / g, or 0.15 to 0.2 mmol / g. If the vinyl group content is less than the above range, it may not be sufficiently crosslinked with Si-H, so that the dielectric loss value increases and thus the electrostatic chuck may not react. On the contrary, if it exceeds the above range, the crosslinking density with Si-H increases, so that the dielectric loss value decreases and thus the electrostatic chuck may not react.

[0082] Preferably, the hydrogen siloxane copolymer of the above chemical formula 2 or a derivative thereof may have 1 to 2 hydrogen groups (-H) substituted with alkyl groups having 1 to 2 carbon atoms. More preferably, the hydrogen siloxane copolymer of the above chemical formula 2 may be an alkylhydrosiloxane-dialkylsiloxane copolymer, and more preferably, it may be a methylhydrosiloxane-dimethylsiloxane copolymer, and the R 12 is hydrogen and the rest are R9 to R 11 and R 13 Inland R 19 The weight average molecular weight (Mw) of the hydrogen siloxane copolymer of the above chemical formula 2 may be 1,000 to 10,000, and more preferably 1,500 to 4,000.

[0083] And, the Si-H content of the hydrogen siloxane copolymer of the above chemical formula 2 or its derivative may be 4 to 16 mmol / g, 4 to 10 mmol / g or 4 to 5 mmol / g. If the Si-H content is less than the above range, the vinyl group included in the organopolysiloxane of the above chemical formula 1 or its derivative may not be sufficiently crosslinked, which may increase the dielectric loss. On the other hand, if the Si-H content exceeds the above range, unreacted Si-H groups may be generated and migrate to the surface of the adhesive layer.

[0084] The above silicone compound preferably uses platinum as a catalyst when reacting the compound of the above chemical formula 1 and the compound of the above chemical formula 2. In addition, the present invention may apply an addition reaction (curing) step, particularly to increase crosslinking density and lower dielectric constant.

[0085] The molar ratio of the vinyl group contained in the organopolysiloxane of the above chemical formula 1 or its derivative and the Si-H group of the hydrogen siloxane copolymer of the above chemical formula 2 or its derivative may be 1:1 to 3.

[0086] If the molar ratio exceeds the above-mentioned range, the crosslinking density increases, but an out-gassing phenomenon occurs due to hydrogen gas generated when the Si-H that has not reacted with vinyl increases, and conversely, if it is below the above range, the number of crosslinking points with vinyl decreases, so the crosslinking density and dielectric constant decrease, and the dielectric loss increases, making it difficult to react to electrostatic chucking.

[0087] The above-mentioned adhesive layer may be a pressure-sensitive adhesive layer. In addition to the organopolysiloxane of the above-mentioned chemical formula 1 or a derivative thereof and the hydrogen siloxane copolymer of the above-mentioned chemical formula 2 or a derivative thereof, an additional component may be included to improve the physical properties of the pressure-sensitive adhesive layer.

[0088] Additional components include silicone gum or MQ resin. The adhesive layer can adhere to sensitive areas such as wafers or organic film layers, and has good adhesive strength and maintains a predetermined crosslinking density, so that the adhesive properties of the product can be maintained even after a certain period of time.

[0089]

[0090] In addition, the adhesive layer (30) can be slot-die coated or comma-coated on the conductive layer (20).

[0091] In addition, the adhesive layer (20) can be dried with hot air at 60 to 150°C or 30 to 35 Hz for 90 to 180 seconds. If the drying time or drying temperature is below the above range, drying is insufficient, so that curing or solvent volatilization is not completely achieved, which may affect electrical properties such as dielectric constant.

[0092]

[0093] In a semiconductor adhesive film (1) according to one embodiment of the present invention, the adhesive layer (30) can be laminated to the entire semiconductor wafer (W) within 1.0 sec from the point in time when the center of the semiconductor adhesive film (1) is pressed and the semiconductor wafer (W) and the adhesive layer (30) come into contact.

[0094]

[0095] It is preferable that the time for the semiconductor adhesive film (1) to be laminated to the entire wafer (W) be formed to be 1 second or less. The rapid lamination of the semiconductor adhesive film (1) to the wafer (W) depends on the wetting performance of the adhesive layer (30) that permeates the surface of the wafer (W). As the thickness of the adhesive layer (30) increases, the wetting performance increases. If the wetting performance is weak and the lamination time exceeds 1 second, the film (1) may be lifted off the wafer (W) as shown in FIG. 5, and the possibility of fine bubbles occurring increases. Therefore, in order to form the lamination time to be 1 second or less, the adhesive layer (30) is formed to be 15 μm or more.

[0096]

[0097] In a semiconductor adhesive film (1) according to one embodiment of the present invention, the thickness of the substrate layer (10) is 25 to 100 ㎛, 33 to 70 ㎛, or 38 to 50 ㎛.

[0098]

[0099] In addition, the thickness of the substrate layer (10) may be 25 to 100 ㎛, 33 to 70 ㎛, or 38 to 50 ㎛. If the thickness of the substrate layer (10) is less than the above range, wrinkles may occur due to shrinkage during the heat process during coating, resulting in an undesirable appearance. Conversely, if the thickness exceeds the above range, the dielectric loss may be low, resulting in no reaction with the electrostatic chuck.

[0100]

[0101] The thickness of each of the above-mentioned substrate layer (S), conductive layer (C), and adhesive layer (A) may simultaneously satisfy Equations 1 and 2 below.

[0102] [Formula 1]

[0103] A / (S+C+A) ≤ 0.5

[0104] [Formula 2]

[0105] C+A ≤ S

[0106] When the above formulas 1 and 2 are simultaneously satisfied, a semiconductor adhesive film having excellent burr characteristics can be obtained.

[0107]

[0108] Hereinafter, embodiments of the present invention will be described.

[0109] Example

[0110] Manufacturing example: Base layer + conductive layer + adhesive layer

[0111] A 0.8 wt% aqueous solution of a mixture of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT-PSS) and a water-dispersed polyurethane (PEDOT-PSS:polyurethane = 1:9 wt) was cross-linked with aziridine at different concentrations (0 wt%, 0.05 wt%, 0.09 wt%, 0.1 wt%, 0.3 wt%, 0.5 wt%, and 0.6 wt%) at room temperature and pressure for 45 minutes, and the resulting reactant was gravure-coated on a polyethylene terephthalate substrate layer having a thickness of 25 to 100 μm, and dried with hot air at 35 Hz at 60°C for 20 seconds, 80°C for 20 seconds, and 100°C for 20 seconds to form a conductive layer having a thickness of 0.03 to 3 μm.

[0112] 27 g of polydimethylsiloxane (weight average molecular weight of about 650,000) of chemical formula 1 containing vinyl groups at both ends with a content of 0.2 mmol / g and 2.7 g of methylhydrosiloxane-dimethylsiloxane copolymer (weight average molecular weight of about 2,500) of chemical formula 2 having a Si-H content of 4 mmol / g were mixed in 70 g of toluene, and 0.005 g of platinum was added thereto as a catalyst, and the product was reacted at room temperature and pressure for 200 minutes, slot die-coated on the conductive layer, and dried with hot air at 35 Hz at 60°C for 50 seconds, 110°C for 50 seconds, and 150°C for 50 seconds to form an adhesive layer with a thickness of 15-50 μm.

[0113]

[0114] Test Example 1: Change in surface resistance according to the thickness of the conductive layer

[0115] The surface resistance of Examples 1 to 8 and Comparative Examples 1 and 2 was measured using a surface resistance meter (Mitsubishi Chemical, Japan) when the Si-H / vinyl group molar ratio was 2.2 and the applied voltage was 1 kV. The results are shown in Table 1.

[0116] Comparative Example 1 Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Comparative Example 2 Base layer thickness (㎛) 50 50 50 50 50 50 50 50 Conductive layer thickness ㎛ 0.02 0.03 0.15 0.3 0.9 1.5 3 3.4 Adhesive layer thickness ㎛ 20 20 20 20 20 20 20 Surface resistance (Ω / sq) 1.32 × 10 13 7.54 ×10 12 1.39 ×10 12 9.81 ×10 11 8.84 ×10 11 5.93 ×10 11 3.82 ×10 11 2.83 ×10 10

[0117] The test results show that when the thickness of the conductive layer is 0.03 to 0.3 ㎛, the surface resistance value is the target 1 × 10 11 1 × 10 13 It was confirmed to have a range of Ω / sq.

[0118] Test Example 2: Changes in surface resistance and bonding time according to adhesive layer thickness

[0119] When the Si-H / vinyl group molar ratio was 2.2 and the applied voltage was 1 kV, the surface resistances of Examples 7 to 10 and Comparative Examples 3 to 6 were measured using a surface resistance meter (Mitsubishi Chemical, Japan), and the time for the semiconductor adhesive film (1) to be completely laminated to the wafer (W) was measured. The results are shown in Table 2.

[0120] The wafer (W) was selected as a 200 mm wafer. As shown in Fig. 3, when the film (1) is laminated to the wafer (W), pressure is applied to the center portion to make contact with the wafer (W). The time for the semiconductor adhesive film (1) to be laminated to the entire wafer (W) refers to the time elapsed from when the film (1) comes into contact with the wafer (W) as shown in Fig. 3 until the film (1) is completely laminated to the wafer (W) as shown in Fig. 4. As shown in Fig. 5, when the film (1) is not completely adhered to the wafer (W), it refers to a state in which the entire lamination is not completed.

[0121] Comparative Example 3 Comparative Example 4 Example 7 Example 8 Example 9 Example 10 Comparative Example 5 Comparative Example 6 Base layer thickness ㎛ 50 50 50 50 50 50 50 50 Conductive layer thickness ㎛ 0.15 0.15 0.15 0.15 0.15 0.15 0.15 Adhesive layer thickness ㎛ 5 10 15 20 30 49.5 7 5 100 Surface resistance (Ω / sq) 1.0 × 10 10 5.0 ×10 10 2.0 × 10 11 1.39 ×10 12 5.5 ×10 12 9.0 ×10 12 1.2 ×10 14 5.0 ×10 14 Mating time (sec) 2 to 3 1.5 to 30.3 to 10.1 to 0.5 0.1 to 0.3 0.1 to 0.3 0.1 to 0.2 0.1 to 0.2

[0122] When 1 kV voltage is applied to the semiconductor adhesive film (1), the surface resistance is 1 × 10 11 1 × 10 13Ω / sq. If it is less than the above range, the dielectric loss increases and the wafer (W) to which the semiconductor adhesive film (1) is adhered may not be fixed to the electrostatic chuck. On the contrary, if it exceeds the above range, the dielectric loss decreases but the mobility of electrons decreases and the wafer (W) to which the semiconductor adhesive film (1) is adhered is not fixed to the electrostatic chuck. At this time, looking at the surface resistance value of the film (1) when 1 kV voltage is applied depending on the thickness of the adhesive layer (30), in the case of Comparative Examples 3 to 4, when the thickness of the adhesive layer (30) is less than 15㎛, the surface resistance is 1 × 10 11 It can be seen that it is formed to be less than Ω / sq. In addition, looking at comparative examples 5 and 6, when the thickness of the adhesive layer (30) exceeds 50㎛, the surface resistance is 1 × 10 13 It can be seen that it exceeds Ω / sq. Therefore, when the thickness of the adhesive layer (30) is formed to be 15 to 50 ㎛, when 1 kV voltage is applied to the semiconductor adhesive film (1), the surface resistance is 1 × 10 11 1 × 10 13 It can be formed as Ω / sq. It is preferable that the time for the semiconductor adhesive film (1) to be laminated to the entire wafer (W) is formed to be 1 second or less. The speed of lamination of the semiconductor adhesive film (1) to the wafer (W) depends on the wetting performance, and the thicker the adhesive layer (30), the higher the wetting performance. Looking at Table 2, it can be seen that the thicker the adhesive layer (30), the faster the lamination time. At this time, looking at Comparative Examples 3 and 4, it can be seen that the lamination time exceeds 1 second when the adhesive layer is formed to be less than 15 ㎛. In addition, when the wetting performance is weak and the lamination time exceeds 1 second, the problem of the film (1) lifting on the wafer (W) may occur as in FIG. 5, and the possibility of fine bubbles occurring increases. Therefore, in order to form a bonding time of 1 sec or less, the adhesive layer (30) is formed to be 15 ㎛ or more.

[0123] Test Example 3: Burr and bubble occurrence according to adhesive layer thickness

[0124] The semiconductor adhesive film (1) is used by cutting a roll-shaped film. In this case, if the thickness of the adhesive layer (30) exceeds 50 ㎛, burrs may be generated when cutting the film (1), which may contaminate the space between the wafer (W) and the film (1). In addition, if the ratio of the thickness of the adhesive layer (30) to the total thickness of the semiconductor adhesive film (1) exceeds 50%, the stiffness of the film (1) is weak, so that bubbles are likely to be generated when the film (1) is adhered to the wafer (W). In addition, as mentioned in Test Example 2, if the thickness of the adhesive layer (30) is formed to be less than 15 ㎛, the wetting performance is weakened, so that the overall bonding speed between the film (1) and the wafer (W) is slowed down, which may increase the probability of bubble generation.

[0125] The burr test was conducted using the pencil hardness test method. The semiconductor adhesive film (1) to be measured is placed on a glass plate in a pencil hardness test device, as shown in Fig. 6. Then, the pressure applied to the pencil, which has a pencil hardness of 7H and a weight of 750 g, is maintained constant. The pencil's movement speed is set to 120 mm / s. At this time, the occurrence of burrs on the film (1) is measured.

[0126] In the burr test, when the film (1) was observed under an optical microscope, if no burr was formed in the part where the film (1) was scratched by a pencil as in Fig. 7, it was evaluated as 'AA', if burrs were found only in a part of the film (1) as in Fig. 8, but the burr was found to be formed with a length of 20 ㎛ or less, it was evaluated as 'A', if burrs were found only in a part of the film (1) as in Fig. 8, but the burr was found to be formed with a length of 20 to 40 ㎛, it was evaluated as 'B', and if burrs were found to be formed over the entire film (1) and the burr was found to be formed with a length exceeding 40 ㎛, it was evaluated as 'C'.

[0127] In addition, the evaluation of whether bubbles were generated was performed by pressing the film (1) for semiconductor adhesion with a roll-shaped bar at a temperature of 65℃ using a tape mounting device (DT-MWM 1230A, Dynatech) to check for the presence of bubbles between the wafer (W) and the semiconductor adhesive film (1). At this time, if the film (1) was well laminated to the entire wafer (W) without bubbles, it was evaluated as 'good', and if there were bubbles, it was evaluated as 'bad'.

[0128] Comparative Example 7Comparative Example 8Example 11Example 12Example 13Example 14Comparative Example 9Comparative Example 10Base layer thickness ㎛25252610010010025100Conductive layer thickness ㎛0.030.030.033330.033Adhesive layer thickness ㎛5035251517187510Adhesive layer thickness ratio (%)66.6458.3048.9912.7114.16714.87668.7211.21Buffer characteristicsBAAAAAAAAACAABubble characteristicsPoorPoorGoodGoodGoodGoodGoodPoorPoor

[0129] Looking at Table 3, it can be seen that when the thickness of the adhesive layer (30) exceeds 50 ㎛ (Comparative Example 9), the burr characteristic is grade C. When the thickness of the adhesive layer (30) is 50 ㎛ (Comparative Example 7), it can be seen that the burr characteristic is grade B. When the thickness of the adhesive layer (30) is 35 ㎛ (Comparative Example 8), it can be seen that the burr characteristic is grade A. When the thickness of the adhesive layer (30) is 18 to 25 ㎛ (Examples 11 to 14), it can be seen that the burr characteristic is grade AA. In addition, when the thickness ratio of the adhesive layer (30) to the film (1) exceeds 50% (Comparative Examples 7, 8, 9), it can be seen that bubbles are generated between the film (1) and the wafer (W). In the case of Comparative Example 10, it can be seen that the adhesive layer thickness is formed to be less than 15 ㎛, which weakens the wetting performance and causes voids.

[0130] Comparative Example 11 Comparative Example 12 Example 15 Example 16 Example 17 Example 18 Comparative Example 13 Comparative Example 14 Base layer thickness ㎛ 3 3 3 3 3 7 0 7 0 3 7 0 Conductive layer thickness ㎛ 0.03 0.03 0.03 3 3 3 0.03 3 Adhesive layer thickness ㎛ 5 0 3 5 2 5 1 5 1 7 1 8 5 5 1 3 Adhesive layer thickness ratio (%) 6 0.2 2 5 1 4 5 4 3 0 8 1 7 0 4 5 1 8 8 9 1 9 7 8 6 2 7 8 7 1 5 1 1 6 Burr characteristics BAAAAAAAAACAAVoid characteristics Poor Poor Good Good Good Good Good Bad Bad

[0131] Looking at Table 4, it can be seen that when the thickness of the adhesive layer (30) exceeds 50 ㎛ (Comparative Example 13), the burr characteristic is grade C. When the thickness of the adhesive layer (30) is 50 ㎛ (Comparative Example 11), it can be seen that the burr characteristic is grade B. When the thickness of the adhesive layer (30) is 35 ㎛ (Comparative Example 12), it can be seen that the burr characteristic is grade A. When the thickness of the adhesive layer (30) is 18 to 25 ㎛ (Examples 15 to 18), it can be seen that the burr characteristic is grade AA. Looking at Table 4, it can be seen that when the thickness of the adhesive layer (30) exceeds 50 ㎛ (Comparative Example 13), a burr occurs. In addition, when the thickness ratio of the adhesive layer (30) to the film (1) exceeds 50% (Comparative Examples 11, 12, 13), it can be seen that bubbles are generated between the film (1) and the wafer (W). In the case of Comparative Example 14, it can be seen that the adhesive layer thickness is formed to be less than 15 ㎛, so the wetting performance is weakened and voids are generated.

[0132] Comparative Example 15Example 19Example 20Example 21Example 22Example 23Comparative Example 16Comparative Example 17Base layer thickness ㎛3838385050503850Conductive layer thickness ㎛0.030.030.033330.033Adhesive layer thickness ㎛5035251517185513Thickness ratio of adhesive layer (%)56.8047.925539.6622.058824.285725.3559.1219.697Buffer characteristicsBAAAAAAAAACAABubble characteristicsPoorGoodGoodGoodGoodGoodGoodPoorPoor

[0133] Looking at Table 5, it can be seen that when the thickness of the adhesive layer (30) exceeds 50 ㎛ (Comparative Example 16), the burr characteristic is grade C. When the thickness of the adhesive layer (30) is 50 ㎛ (Comparative Example 15), it can be seen that the burr characteristic is grade B. When the thickness of the adhesive layer (30) is 35 ㎛ (Comparative Example 19), it can be seen that the burr characteristic is grade A. When the thickness of the adhesive layer (30) is 18 to 25 ㎛ (Examples 19 to 23), it can be seen that the burr characteristic is grade AA.

[0134] Looking at Table 5, it can be seen that when the thickness of the adhesive layer (30) exceeds 50 ㎛ (Comparative Example 16), burrs are generated. In addition, when the thickness ratio of the adhesive layer (30) to the film (1) exceeds 50% (Comparative Examples 15, 16), it can be seen that bubbles are generated between the film (1) and the wafer (W). In the case of Comparative Example 17, it can be seen that the adhesive layer thickness is formed to be less than 15 ㎛, so the wetting performance is weakened and voids are generated.

[0135]

[0136] In comprehensive view of Tables 3 to 5, it can be seen that when the thickness of the adhesive layer (30) is formed to be 15 to 50 ㎛, burr generation is suppressed, burr characteristics are maintained at a 'B' grade or higher, and bubble generation is suppressed due to improved wetting performance.

[0137] In addition, when the thickness of the adhesive layer (30) is formed to be 15 to 35 ㎛, it can be seen that burr generation is suppressed, burr characteristics are maintained at 'A' grade or higher, and bubble generation is suppressed due to improved wetting performance.

[0138] In addition, when the thickness of the adhesive layer (30) is formed to be 15 to 25 ㎛, it can be seen that burr generation is suppressed, burr characteristics are maintained at a grade of 'AA' or higher, and bubble generation is suppressed due to improved wetting performance.

[0139] In addition, when the thickness ratio of the adhesive layer (30) to the total thickness of the film (1) is formed to be 50% or less, the stiffness of the substrate layer (10) has a greater influence on the film (1) than the flexibility of the adhesive layer (30), so that the stiffness of the film is maintained above a certain level, and thus voids do not occur during lamination between the film (1) and the wafer (W).

[0140]

[0141] Test Example 4: Burr occurrence depending on adhesive layer material

[0142] The burr test was conducted using a pencil hardness test method. In a pencil hardness test device such as that in Fig. 6, a semiconductor adhesive film (1) to be measured is placed on a glass plate. Then, the pressure applied to the pencil with a pencil hardness of 7H is maintained constant by a weight of 750 g. The pencil is moved at a speed of 120 mm / s. At this time, it is measured whether a burr is formed on the film (1). At this time, the thickness of the base layer (10) of the film (1) is formed to be 50 ㎛, the thickness of the conductive layer (20) is formed to be 3 ㎛, and the thickness of the adhesive layer (30) is formed to be 20 ㎛. In the burr test, when the film (1) is observed with an optical microscope, whether a burr is formed is confirmed as in Figs. 10 to 12.

[0143]

[0144] Example 24 Comparative Example 18 Comparative Example 19 Adhesive layer material Silicone series (adhesive layer of Example 1) Acrylic series (Samyoung Ink acrylic adhesive SYS-7600) Urethane series (Hana Ihwa urethane adhesive HN-PU125) Burr occurrence XOO

[0145] Fig. 10 is a photograph showing that burrs did not occur in the film (1) when the adhesive layer material was formed from a silicone series according to Example 24. Fig. 11 is a photograph showing that burrs occurred in the film (1) when the adhesive layer material was formed from an acrylic series according to Comparative Example 18. Fig. 12 is a photograph showing that burrs occurred in the film (1) when the adhesive layer material was formed from a urethane series according to Comparative Example 19. Therefore, it can be seen that the burr characteristics are excellent when the adhesive layer (30) is formed from a silicone series.

[0146]

[0147] Although the present invention has been described in detail through specific examples, this is intended to specifically explain the present invention, and the present invention is not limited thereto, and it will be apparent that modifications and improvements can be made by those skilled in the art within the technical spirit of the present invention.

[0148] All simple modifications or changes of the present invention fall within the scope of the present invention, and the specific protection scope of the present invention will be made clear by the appended claims.

Claims

1. Base layer; A conductive layer formed on the above substrate layer; and A semiconductor adhesive film comprising an adhesive layer formed on the above-mentioned conductive layer, The above semiconductor adhesive film has a surface resistance of 1 × 10 when 1 kV voltage is applied. 11 Inside 1 × 10 13 With a range of Ω / sq, A semiconductor adhesive film, wherein the thickness of the adhesive layer is 15 to 50 ㎛.

2. In claim 1, A semiconductor adhesive film, wherein the thickness of the adhesive layer is formed to be 50% or less of the thickness of the semiconductor adhesive film.

3. In claim 2, A semiconductor adhesive film, wherein the thickness of the above-mentioned challenging layer is formed to be 0.03 to 3 ㎛.

4. In claim 1, A semiconductor adhesive film further comprising a release film formed on the adhesive layer.

5. In claim 1, A semiconductor adhesive film, wherein the adhesive layer is bonded to the entire semiconductor wafer within 1.0 sec from the time the semiconductor wafer and the adhesive layer come into contact by pressing the center of the semiconductor adhesive film.

6. In claim 5, A semiconductor adhesive film, wherein the adhesive layer comprises at least one compound selected from the group consisting of a rubber compound, an acrylic compound, a silicone compound, and a urethane compound.

7. In claim 6, A semiconductor adhesive film, wherein the thickness of the adhesive layer is 15 to 35 ㎛ or 15 to 25 ㎛.

8. In claim 1, A semiconductor adhesive film, wherein the thickness of the above-mentioned substrate layer is 25 to 100 ㎛, 33 to 70 ㎛, or 38 to 50 ㎛.

9. In claim 1, A semiconductor adhesive film wherein the thickness of each of the substrate layer (S), conductive layer (C) and adhesive layer (A) simultaneously satisfies Equations 1 and 2 below. [Formula 1] A / (S+C+A) ≤ 0.5 [Formula 2] C+A ≤ S

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