Wafer separation method and wafer processing apparatus

Abstract

The present application discloses a wafer separation method. The wafer separation method comprises: supporting, on a supporting platform, a wafer to be processed in which a pre-crack has formed, a first end surface of the wafer being upward and a cutting tool processing the wafer along a first preset position of the first end surface of the wafer; and adjusting the height of the supporting platform and supporting the wafer on the supporting platform again, a second end surface of the wafer being upward and the cutting tool processing the wafer along a second preset position of the second end surface of the wafer, to complete processing of the wafer. The wafer separation method of the present application avoids mechanical deformation and stress concentration release caused by mechanical processing and splitting of wafers, eliminates cutting tool wear and dust pollution, and does not require wafers to be cleaned with pure water, thereby eliminating wastewater generation and saving costs. The present application further provides a wafer processing apparatus.

Description

Wafer separation method and wafer processing device

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on December 18, 2023, with application number 202311751680.6 and invention name “Wafer Separation Method and Wafer Processing Device”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of wafer processing technology, and in particular to a wafer separation method and a wafer processing device. Background Art

[0003] As China continues to promote the adjustment of its industrial and energy structures and vigorously develop renewable energy, China strives to achieve carbon peak before 2030 and carbon neutrality before 2060. The new energy industry has a strong demand for semiconductor devices based on third-generation semiconductor materials (SiC, GaN, etc.). This promotes the chip industry to deploy third-generation semiconductor devices while also posing new challenges to the cutting and separation processes of semiconductor devices.

[0004] Since the back of the wafer is coated with a metal conductive film, two methods are usually used in the prior art for wafer dicing: one method is to use traditional mechanical cutting. Mechanical cutting mainly uses diamond to grind the wafer. This wafer separation process has problems such as mechanical deformation, stress concentration release and tool wear, which will cause dust pollution and require additional cleaning and polishing steps. The other method is to first use laser ablation to remove the metal conductive film on the back of the wafer. By setting this step, the subsequent splitting process is easier to completely split and avoid the situation where the metal conductive film is involved. The wafer is then flipped so that its front side is facing up. After the grains are separated by laser internal focusing cutting, they are separated by splitting equipment. Since this method requires the installation of a device for laser ablation to remove the metal conductive film on the back of the wafer, it requires a large space and high cost. The laser ablation process requires the addition of protective glue, and pure water is required to clean the wafer before and after cutting, so a contaminated water treatment device is required. Summary of the Invention

[0005] In view of this, the present application provides a wafer separation method that avoids the mechanical deformation and stress concentration release caused by mechanical processing and splitting of wafers, does not cause tool wear and dust pollution, does not require pure water to clean the wafers, and therefore does not produce sewage, saving costs.

[0006] To achieve the above objectives, this application provides the following technical solutions:

[0007] A first aspect of the present application provides a wafer separation method, comprising:

[0008] The wafer to be processed, on which a pre-crack has been formed, is supported on a supporting platform, with the first end surface of the wafer facing upward, and a cutting tool processes the wafer along a first preset position on the first end surface of the wafer;

[0009] Adjust the height of the support platform and support the wafer on the support platform again, with the second end surface of the wafer facing upward, and process the wafer along the second preset position of the second end surface of the wafer to complete the processing of the wafer.

[0010] In a possible implementation, the first end surface is the back surface of the wafer, and the second end surface is the front surface of the wafer;

[0011] A first film is attached to the first end surface, and a second film is attached to the second end surface.

[0012] In one possible implementation, the support platform includes a receiving platform supported on the middle portion of the wafer and a clamp supported on the edge portion of the wafer and clamping the wafer. The receiving platform includes two opposing receiving platforms, with an adjustment gap formed between the two receiving platforms. The width of the adjustment gap can be adjusted as needed.

[0013] Before supporting the wafer to be processed with pre-cracks formed thereon on the supporting platform, the method includes adjusting the position of the wafer so that the pre-cracks are arranged in parallel with the adjustment gap and the pre-cracks are suspended on the adjustment gap.

[0014] In a possible implementation, the width of the adjustment gap between the two receiving platforms is 0.3 to 1.99 times the grain size.

[0015] In a possible implementation, the pre-crack on the wafer to be processed is formed by laser being incident on a second preset position on the second end face of the wafer and internally focused inside the material.

[0016] In one possible implementation, when the tool processes the wafer along a first preset position of the wafer, the blade tip of the tool physically contacts the first preset position on the first end face of the wafer, wherein the tool depth is controlled to be 0 μm-200 μm;

[0017] When the blade tip of the tool contacts the first film provided on the first end surface of the wafer and pressure is applied to the first preset position of the wafer, the tool is vibrated and struck with a hammer to cause the tool to split the wafer.

[0018] In one possible implementation, when the tool processes the wafer along the second preset position of the wafer, the blade tip of the tool physically contacts the second preset position on the second end face of the wafer, wherein the tool depth is controlled to be 0 μm-200 μm;

[0019] When the blade tip of the tool contacts the second film provided on the second end face of the wafer and pressure is applied to the second preset position of the wafer, the tool is vibrated and struck with a hammer to separate the metal coating on the first end face of the wafer.

[0020] In one possible implementation, in the method, the height of the support platform is adjusted by a clamp, and the clamp includes a support adjustment mechanism and a pressure plate that are arranged in conjunction with each other. The support adjustment mechanism includes a first elastic member, a first movable component that moves along a first direction, and a second movable component that moves along a second direction different from the first direction. The two ends of the first elastic member are respectively connected to the first movable component and the second movable component. The first movable component is connected to the second movable component through a transmission connection, so that the second movable component moves along the second direction under the drive of the first movable component and the first elastic member to adjust the height of the support platform.

[0021] In a possible implementation, the first movable component includes a lifting rod having a lifting inclined surface, and the second movable component includes a rotating member slidably connected to the lifting inclined surface.

[0022] It can be seen from the above technical solutions that the wafer separation method provided by the present application first makes physical contact and splits the blade tip of the tool with the first preset position of the first end face of the wafer, and then adjusts the height of the support platform so that the blade tip of the tool is again physically contacted and splits the blade tip with the second preset position of the second end face of the wafer. The splitting of the wafer is completed by splitting two different end faces. The wafer separation method provided by the present application is divided into two splittings by adjusting the height of the support platform. Therefore, there is no need to pre-treat the metal coating on the back of the wafer, which can simplify the processing steps of the wafer with metal coating on the back. There is no need to set up equipment for laser ablation to remove the metal conductive film on the back of the wafer, saving space and cost. The wafer separation method provided by the present application uses a physical contact and splitting method to separate the wafers on both end faces, avoiding mechanical deformation and stress concentration release caused by mechanical processing to split the wafers, and will not produce tool wear and dust pollution. Therefore, there is no need to clean the wafer with pure water, so no sewage is generated, and there is no need to set up a polluted water treatment device, saving cost.

[0023] A second aspect of the present application provides a wafer processing device, which is applied to the above-mentioned wafer separation method. The wafer processing device includes a supporting platform.

[0024] The wafer processing device of the present application is applied to the above-mentioned wafer separation method, and therefore has the advantages of the above-mentioned wafer separation method, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0026] FIG1 is a schematic diagram of the steps of a wafer separation method provided in an embodiment of the present application;

[0027] FIG2 is a schematic structural diagram of the front side of a wafer provided in an embodiment of the present application;

[0028] FIG3 is a schematic diagram of a scribe line on the front side of a wafer according to an embodiment of the present application;

[0029] FIG4 is a schematic structural diagram of the back side of a wafer provided in an embodiment of the present application;

[0030] FIG5 is a schematic diagram of the structure of a wafer backside cleavage according to an embodiment of the present application;

[0031] FIG6 is a schematic diagram of the structure of a wafer during front-side cleavage according to an embodiment of the present application;

[0032] FIG7 is a schematic diagram of the structure of crystal separation during backside cleavage of a wafer according to an embodiment of the present application;

[0033] FIG8 is a schematic structural diagram of a wafer separated into dies at an angle according to an embodiment of the present application;

[0034] FIG9 is a schematic structural diagram of dies separated from a wafer according to an embodiment of the present application from another angle;

[0035] FIG10 is a schematic diagram of the structure of a tool and a wafer in physical contact according to an embodiment of the present application;

[0036] FIG11 is a schematic diagram of the structure of a tool provided in an embodiment of the present application when the tool is in contact with the wafer and the tool is downwardly moved to a depth d;

[0037] FIG12 is a schematic structural diagram of the support adjustment mechanism provided in an embodiment of the present application.

[0038] Among them: 1. tool, 101. blade tip, 2. receiving platform, 3. pressure plate, 4. first film, 5. second film, 6. wafer, 601. straight edge, 602. crystal, 603. electrode circuit, 604. metal coating, 7. pre-crack, 8. support frame, 9. cutting path, 10. support adjustment mechanism, 1001. first movable component, 1002. second movable component. DETAILED DESCRIPTION

[0039] On the one hand, the present application discloses a wafer separation method, which avoids the mechanical deformation and stress concentration release caused by mechanical processing and splitting of wafers, does not cause tool wear and dust pollution, does not require pure water to clean the wafers, and therefore does not generate sewage, saving costs.

[0040] Another aspect of the present application also discloses a wafer processing device.

[0041] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0042] Referring to Figures 1 to 11, the wafer separation method 100 of the present application includes a first end face splitting process S110 and a second end face splitting process S120. S110, the first end face splitting process includes: supporting the wafer 6 to be processed on which the pre-crack 7 has been formed on the supporting platform, with the first end face of the wafer 6 facing upward, and the tool 1 processes the wafer 6 along the first preset position of the first end face of the wafer 6. S120, the second end face splitting process includes: adjusting the height of the supporting platform, and supporting the wafer on the supporting platform again, with the second end face of the wafer 6 facing upward, and the tool 1 processes the wafer 6 along the second preset position of the second end face of the wafer 6 to complete the processing of the wafer 6, specifically to complete the splitting of the wafer 6.

[0043] The wafer separation method of the present application first makes physical contact and splits the blade tip 101 of the tool 1 with the first preset position of the first end face of the wafer 6, then adjusts the height of the support platform, and again makes physical contact and splits the blade tip 101 of the tool 1 with the second preset position of the second end face of the wafer 6, and completes the splitting of the wafer by splitting two different end faces. The wafer separation method provided by the present application is divided into two splits by adjusting the height of the support platform, so there is no need to pre-treat the metal coating on the back of the wafer 6, which can simplify the processing steps of the wafer with metal coating on the back, and does not need to set up equipment for laser ablation to remove the metal conductive film on the back of the wafer 6, saving space and cost. The wafer separation method provided by the present application uses a physical contact and splitting method to separate the wafers on both end faces of the wafer 6, avoiding the mechanical deformation and stress concentration release caused by mechanical processing and splitting the wafer 6, and will not produce tool wear and dust pollution. Therefore, there is no need to clean the wafer with pure water, so no sewage is generated, and no polluted water treatment equipment is required, saving cost.

[0044] In one embodiment, the first end surface is the back surface of the wafer 6, and the second end surface is the front surface of the wafer 6. The first preset position on the back surface of the wafer 6 is determined by a CCD, and the second preset position on the front surface of the wafer 6 is the scribe line 9 on the wafer 6. As shown in Figures 2 and 3, the scribe line 9 in the X direction is parallel to the straight edge 601 of the wafer 6, and the scribe line 9 in the Y direction is perpendicular to the straight edge 601 of the wafer 6.

[0045] Among them, the supporting platform includes a receiving platform 2 supported on the middle part of the wafer 6 and a clamp supported on the edge part of the wafer 6 and clamping the wafer 6. The receiving platform 2 includes two relatively arranged receiving platforms, and an adjustment gap is formed between the two receiving platforms. The width of the adjustment gap is adjusted by technical personnel in this field as needed. Before supporting the wafer 6 to be processed with the pre-crack 7 formed on the supporting platform, it includes adjusting the position of the wafer 6 so that the pre-crack 7 is set parallel to the adjustment gap, and the pre-crack 7 is suspended on the adjustment gap to facilitate subsequent splitting processing. Generally, the width of the adjustment gap between the two receiving platforms is 0.3 to 1.99 times the size of the grain. Grains are obtained after the wafer 6 is separated.

[0046] Furthermore, the pre-crack 7 on the wafer 6 to be processed is formed by the laser being incident along a second preset position on the second end face of the wafer 6, with the laser internally focused within the material of the wafer 6. Specifically, the laser is incident on the cutting path 9 on the front side of the wafer 6, where it is internally focused to form micro-nano explosion points within the material and cause the crack to extend in the direction of the cutting of the wafer 6. During multi-layer or multi-focus cutting, cracks in the upper and lower surfaces extend and connect, forming a visible pre-crack 7 on the front side of the wafer 6.

[0047] Specifically, when the tool 1 processes the wafer 6 along the first preset position of the wafer 6, the blade tip 101 of the tool 1 makes physical contact with the first preset position on the first end face of the wafer 6, as shown in FIG5. The depth d of the tool 1 is controlled to be 0 μm-200 μm, as shown in FIG11. The distance between the blade tip 101 and the receiving platform 2 is H, and the width of the adjustment gap between the receiving platforms is L. When the blade tip 101 of the tool 1 contacts the first film 4 provided on the first end face of the wafer 6 (the back face of the wafer 6), and pressure is applied to the first preset position of the wafer 6, the tool 1 is vibrated and struck with a hammer, so that the tool splits the wafer, as shown in FIG7. The first film 4 is attached to the back face (first end face) of the wafer 6, and the second film 5 is attached to the front face (second end face) of the wafer 6. The first film 4 is a film with adhesiveness and stretchability, which can be a blue film or a UV film, and the second film 5 is an anti-static transparent film, which can be a Mylar film. The first film 4 is used to protect the metal coating 604 on the back of the wafer 6, and the second film 5 is used to protect the electrode circuit 603 on the front of the wafer 6. It can be understood that the wafer 6 also includes a crystal 602, the back of the crystal 602 is provided with a metal coating 604, and the front is provided with an electrode circuit 603.

[0048] In the above steps, when the blade tip 101 contacts the first film 4 of the wafer 6, the first film 4 is compressed and forcefully applied to the first predetermined position on the wafer 6. The hammer then transmits kinetic energy vibration to the tool 1. In conjunction with the lever principle formed by the three-point support of the support table 2 and the tool 1, the pre-crack 7 on the front side of the wafer 6 extends from the surface to the metal coating 604 on the back side of the wafer 6, completing the cleavage of the wafer by the tool. During this process, the metal coating 604 on the back side of the wafer 6 is not completely separated.

[0049] Furthermore, the following steps are included: when the tool 1 processes the wafer 6 along the second preset position of the wafer 6, the blade tip 101 of the tool 1 is in physical contact with the second preset position on the second end face of the wafer 6, wherein the depth d of the tool 1 is controlled to be 0μm-200μm. When the blade tip 101 of the tool 1 contacts the second film 5 provided on the second end face of the wafer 6, and pressure is applied to the second preset position of the wafer 6, a hammer is used to vibrate and strike the tool 1 to separate the metal coating 604 on the first end face of the wafer 6. After the above steps, the wafer 6 is placed on the film expansion device to complete the equal-spaced separation of the wafer 6 into grains, as shown in Figures 8 and 9.

[0050] In the method, the height of the support platform is adjusted by a fixture, which includes a support adjustment mechanism 10 and a pressure plate 3 that are arranged in a coordinated manner. A support frame 8 is placed on the support adjustment mechanism 10, and the support frame 8 is used to support the wafer 6. The support adjustment mechanism 10 includes a first elastic member, a first movable component 1001 that moves along a first direction, and a second movable component 1002 that moves along a second direction different from the first direction. As shown in FIG12 , the two ends of the first elastic member are respectively connected to the first movable component 1001 and the second movable component 1002. The first movable component 1001 is in transmission connection with the second movable component 1002, so that the second movable component 1002 moves along the second direction under the drive of the first movable component 1001 and the first elastic member to adjust the height of the support platform. The first movable component 1001 includes a lifting rod with a lifting inclined surface, and the second movable component 1002 includes a rotating part slidably connected to the lifting inclined surface. The movement of the first movable component 1001 drives the lifting rod to move, thereby promoting the height change of the rotating part, and then drives the second movable component 1002 to rise and fall, thereby adjusting the height of the support surface to meet the change demand of the support height of the wafer 6.

[0051] The wafer separation method of the present application includes:

[0052] Step 1: Attach the first film 4 with the front side of the wafer 6 facing upwards;

[0053] Step 2: The laser is incident on the cutting path 9 on the front side of the wafer 6. The laser is focused inside the material to form micro-nano explosion points and make the cracks extend in the direction of wafer cutting. In multi-layer cutting or multi-focus cutting mode, the cracks in the upper and lower directions will extend and connect together, forming a visible pre-crack 7 on the front side of the wafer 6.

[0054] Step 3: The backside cleavage process includes:

[0055] Adjust the level of the wafer 6 through the lower CCD so that the direction of the wafer cutting path 9 is parallel to the direction of the tool 1;

[0056] The width L of the adjustment gap between the two receiving stages is set. The size of the grain to be obtained is a 2mm*2mm square block. The width L of the adjustment gap is selected to be 1.2 times the grain size, that is, 2.4mm.

[0057] The tool 1 moves downward, and the blade tip 101 comes into physical contact with a first preset position on the back side of the wafer 6 through the first film 4. The first film 4 has a certain degree of flexibility, and the magnitude of the interaction force between the blade tip 101 and the grain is positively correlated with the downward depth d of the tool 1. When the blade tip 101 presses the first film 4 and exerts a force on the first preset position, the hammer transmits kinetic energy vibration to the tool 1, extending the surface pre-crack 7 of the wafer from the surface to the metal coating 604 on the back side of the wafer 6, so that the tool splits the wafer.

[0058] Step 4: The front splitting process includes:

[0059] Reversing the direction of the wafer 6 so that the front side of the wafer 6 faces upward; and adjusting the height of the supporting platform by using a fixture;

[0060] The level of the wafer 6 is adjusted by the upper CCD so that the cutting path 9 on the front side of the wafer 6 is parallel to the direction of the tool 1;

[0061] The width L of the adjustment gap between the two receiving stages is set. The size of the grain to be obtained is a 2mm*2mm square block. The width L of the adjustment gap is selected to be 0.8 times the grain size, that is, 1.6mm.

[0062] The tool 1 moves downward, and the blade tip 101 physically contacts the front scribe line 9 of the wafer 6 through the second film 5. The second film 5 has a certain degree of flexibility, and the magnitude of the interaction force between the blade tip 101 and the crystal grain is positively correlated with the depth d of the tool 1 downward. When the blade tip 101 presses against the second film 5 and exerts force on the scribe line 9, the hammer transmits kinetic energy vibration to the tool 1, and the lever principle formed by the three-point support of the support table 2 and the tool 1 is used to separate the metal coating 604 on the back of the wafer 6.

[0063] After the above steps, the wafer 6 is placed on a film expansion device to complete the separation of the grains into grains.

[0064] The wafer separation method of the present application adopts a laser non-contact processing method, so it has the advantages of no contact pollution and no mechanical deformation of the processed materials. This method uses laser internal focusing modification to generate pre-cracks, and the modified area is controlled within 10μm, which has little loss to the material. For example, when designing aisles for wafer chips, the size can be minimized as much as possible, so it has the advantage of saving material costs. When the back-side splitting processing method is adopted, the wafer 6 and the tool 1 are separated by a stretchable first film 4 during the processing process, which has a protective effect on the wafer 6 and has the advantage of soft contact pressure conduction. When the front-side splitting processing method is adopted, the wafer 6 and the tool 1 are separated by an anti-static transparent film, namely the second film 5, during the processing process, which has a protective effect on the front of the wafer 6. The soft contact method transmits the vibration and force of the tool 1 to the back of the wafer 6, thereby achieving complete separation of the metal coating 604 under force. The wafer separation method of the present application does not require pre-processing of the metal coating 604 on the back of the wafer 6, which can simplify the processing steps of the wafer with a metal coating on the back, thereby optimizing production consumption; it adopts a double-sided splitting processing method to separate the crystal 602 and the metal coating 604 of the wafer 6 in steps, which can effectively improve the production yield after wafer separation, thereby improving production efficiency and reducing energy consumption.

[0065] The present application also provides a wafer processing device, which is applied to the above-mentioned wafer separation method. The wafer processing device includes a supporting platform, and the supporting platform includes a receiving platform for supporting the wafer 6 and a clamp for clamping the wafer 6.

[0066] Example:

[0067] Embodiment 1: A wafer separation method, comprising:

[0068] The wafer 6 to be processed, on which the pre-crack 7 has been formed, is supported on a supporting platform, with the first end surface of the wafer 6 facing upward, and the tool 1 processes the wafer 6 along a first preset position on the first end surface of the wafer 6;

[0069] Adjust the height of the support platform and support the wafer 6 on the support platform again, with the second end surface of the wafer 6 facing upward, and the tool 1 processes the wafer 6 along the second preset position of the second end surface of the wafer 6 to complete the processing of the wafer 6.

[0070] Embodiment 2: The wafer separation method according to embodiment 1, wherein the first end surface is the back surface of the wafer 6 and the second end surface is the front surface of the wafer 6;

[0071] A first film 4 is attached to the first end surface, and a second film 5 is attached to the second end surface.

[0072] Embodiment 3: The wafer separation method according to embodiment 1 or 2, wherein the supporting platform includes a receiving platform 2 supported on the middle portion of the wafer 6 and a clamp supported on the edge portion of the wafer 6 and clamping the wafer 6, and the receiving platform 2 includes two receiving platforms 2 arranged opposite to each other, and an adjustment gap is formed between the two receiving platforms 2;

[0073] Before supporting the wafer 6 to be processed with the pre-crack 7 formed thereon on the supporting platform, the position of the wafer 6 is adjusted so that the pre-crack 7 is arranged parallel to the adjustment gap and the pre-crack 7 is suspended above the adjustment gap.

[0074] Embodiment 4: The wafer separation method according to any one of embodiments 1 to 3, wherein the width of the adjustment gap between the two receiving stages 2 is 0.3 to 1.99 times the grain size.

[0075] Example 5: A wafer separation method according to any one of Examples 1-4, wherein the pre-crack 7 on the wafer 6 to be processed is formed by the laser being incident on a second preset position on the second end face of the wafer 6 and the laser being focused internally inside the material.

[0076] Embodiment 6: The wafer separation method according to any one of embodiments 1 to 5, wherein when the tool 1 processes the wafer 6 along the first preset position of the wafer 6, the blade tip 101 of the tool 1 is in physical contact with the first preset position on the first end face of the wafer 6, wherein the depth of the tool 1 is controlled to be 0 μm-200 μm;

[0077] When the blade tip 101 of the tool 1 contacts the first film 4 provided on the first end surface of the wafer 6 and pressure is applied to the first preset position of the wafer 6, the tool 1 is vibrated and struck with a hammer to cause the tool 1 to split the wafer 6.

[0078] Embodiment 7: The wafer separation method according to any one of embodiments 1-6, wherein when the tool 1 processes the wafer 6 along the second preset position of the wafer 6, the blade tip 101 of the tool 1 makes physical contact with the second preset position on the second end face of the wafer 6, wherein the depth of the tool 1 is controlled to be 0 μm-200 μm;

[0079] When the blade tip 101 of the tool 1 contacts the second film 5 provided on the second end face of the wafer 6 and pressure is applied to the second preset position of the wafer 6, the tool 1 is vibrated and struck with a hammer to separate the metal coating 604 on the first end face of the wafer 6.

[0080] Example 8: A wafer separation method according to any one of Examples 1-7, wherein in the method, the height of the support platform is adjusted by a clamp, the clamp includes a support adjustment mechanism 10 and a pressure plate 3 that are arranged in conjunction with each other, the support adjustment mechanism 10 includes a first elastic member, a first movable component 1001 that moves along a first direction, and a second movable component 1002 that moves along a second direction different from the first direction, the two ends of the first elastic member are respectively connected to the first movable component 1001 and the second movable component 1002, the first movable component 1001 is connected to the second movable component 1002 by transmission, so that the second movable component 1002 moves along the second direction under the drive of the first movable component 1001 and the first elastic member to adjust the height of the support platform.

[0081] Example 9: The wafer separation method according to any one of Examples 1-8, wherein the first movable component 1001 includes a lifting rod having a lifting inclined surface, and the second movable component 1002 includes a rotating part slidably connected to the lifting inclined surface.

[0082] Example 10: A wafer processing device, wherein the wafer separation method described in any one of Examples 1-9 is applied, and the wafer processing device includes the support platform.

[0083] In the description of this solution, it should be understood that the terms "upper", "lower", "vertical", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as a limitation on this solution.

[0084] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the technical features being referred to. Thus, a feature identified as "first" or "second" may explicitly or implicitly include one or more of such features. In the description of this solution, "plurality" means two or more, unless otherwise specifically defined.

[0085] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0086] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present application. Various modifications to these embodiments will be readily apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application is not limited to the embodiments shown herein, but is intended to conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A wafer separation method, characterized in that: include: The wafer to be processed, on which a pre-crack has been formed, is supported on a supporting platform, with the first end surface of the wafer facing upward, and a tool processes the wafer along a first preset position on the first end surface of the wafer; The height of the supporting platform is adjusted and the wafer is supported on the supporting platform again, with the second end surface of the wafer facing upward, and the tool processes the wafer along the second preset position of the second end surface of the wafer to complete the processing of the wafer.

2. The wafer separation method according to claim 1, characterized in that: The first end surface is the back side of the wafer, and the second end surface is the front side of the wafer; A first film is attached to the first end surface, and a second film is attached to the second end surface.

3. The wafer separation method according to claim 1 or 2, characterized in that: The supporting platform includes a receiving platform supported on the middle part of the wafer and a clamp supported on the edge part of the wafer and clamping the wafer, and the receiving platform includes two receiving sub-platforms arranged opposite to each other, and an adjustment gap is formed between the two receiving sub-platforms; Before supporting the wafer to be processed with pre-cracks formed on the supporting platform, the method includes adjusting the position of the wafer so that the pre-cracks are arranged parallel to the adjusting gap and the pre-cracks are suspended on the adjusting gap.

4. The wafer separation method according to claim 3, characterized in that: The width of the adjustment gap between the two receiving platforms is 0.3 to 1.99 times the grain size.

5. The wafer separation method according to any one of claims 1 to 4, characterized in that: The pre-crack on the wafer to be processed is formed when the laser is incident along the second preset position on the second end face of the wafer and the laser is focused inside the material.

6. The wafer separation method according to any one of claims 1 to 5, characterized in that: When the tool processes the wafer along the first preset position of the wafer, the blade tip of the tool is in physical contact with the first preset position on the first end surface of the wafer, wherein the tool depth is controlled to be 0 μm-200 μm; When the blade tip of the tool contacts the first film provided on the first end surface of the wafer and pressure is applied to the first preset position of the wafer, a hammer is used to vibrate and strike the tool so that the tool splits the wafer.

7. The wafer separation method according to any one of claims 1 to 6, characterized in that: When the tool processes the wafer along the second preset position of the wafer, the blade tip of the tool is in physical contact with the second preset position on the second end surface of the wafer, wherein the tool depth is controlled to be 0 μm-200 μm; When the blade tip of the tool contacts the second film provided on the second end face of the wafer and pressure is applied to the second preset position of the wafer, the tool is vibrated and struck with a hammer to separate the metal coating on the first end face of the wafer.

8. The wafer separation method according to any one of claims 1 to 7, characterized in that: In the method, the height of the support platform is adjusted by a clamp, and the clamp includes a support adjustment mechanism and a pressure plate that are arranged in conjunction with each other. The support adjustment mechanism includes a first elastic member, a first movable component that moves along a first direction, and a second movable component that moves along a second direction different from the first direction. The two ends of the first elastic member are respectively connected to the first movable component and the second movable component. The first movable component is connected to the second movable component through a transmission connection, so that the second movable component moves along the second direction under the drive of the first movable component and the first elastic member to adjust the height of the support platform.

9. The wafer separation method according to claim 8, characterized in that: The first movable assembly includes a lifting rod having a lifting inclined surface, and the second movable assembly includes a rotating member slidably connected to the lifting inclined surface.

10. A wafer processing device, characterized in that: Applied to the wafer separation method described in any one of claims 1 to 9, the wafer processing device includes the supporting platform.

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