Thin film deposition device and thin film deposition method

Abstract

A thin film deposition device, comprising a radio frequency power supply (D), used for providing radio frequency power and generating within a processing chamber an electric field; a heating unit (100), comprising a heating tray (110) for heating a substrate (W) and a rotating shaft (120) for supporting the heating tray (110); a support unit (200), comprising a support ring (210) surrounding the heating tray (110) and a support seat (230) for supporting the support ring (210); a power transmission unit (300), fixedly connected to the rotating shaft (120); and a bearing part (900), comprising a second bearing part (920) and a third bearing part (930). The power transmission unit (300) is mounted on the third bearing part (930) and penetrates through the second bearing part (920) to be fixedly connected to the rotating shaft (120). The support seat (230) is sleeved on the rotating shaft (120) and is fixedly connected to the second bearing part, so that when the third bearing part (930) moves up and down with respect to the second bearing part (920), the power transmission unit (300) and the heating unit (100) move up and down with respect to the support unit (200), thereby solving the problem of poor uniformity of thin films deposited on substrates (W) in the prior art.

Description

Thin film deposition device and thin film deposition method Technical Field

[0001] The present application relates to the field of semiconductor technology, and more particularly to a thin film deposition device and a thin film deposition method. Background Art

[0002] PECVD (plasma enhanced chemical vapor deposition) equipment is used to deposit various dielectric thin films on substrate surfaces. Film thickness uniformity is a key parameter in the thin-film deposition process, directly impacting film properties and yield. However, film thickness uniformity is affected by many factors, particularly uneven substrate heating, which is a significant factor influencing film thickness uniformity.

[0003] During thin film deposition, the substrate on which the thin film is to be deposited is placed on a heating tray, which heats the substrate. However, the uneven temperature of the heating tray results in uneven heating of the substrate, and the thickness of the thin film deposited on the substrate surface is also uneven. Therefore, it is necessary to provide a thin film deposition apparatus and method that can achieve uniform film thickness. Summary of the Invention

[0004] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a thin film deposition device and a thin film deposition method, which are used to solve the problem of poor uniformity of thin films deposited on substrates in the prior art.

[0005] To achieve the above-mentioned purpose and other related purposes, the present application provides a thin film deposition device, comprising: a radio frequency power supply for providing radio frequency power to generate an electric field in a processing chamber; a heating unit, comprising a heating tray for heating a substrate and a rotating shaft supporting the heating tray; a supporting unit, comprising a supporting ring arranged around the heating tray and a supporting seat supporting the supporting ring; a power transmission unit, fixedly connected to the rotating shaft; a bearing part, comprising a second bearing part and a third bearing part, the power transmission unit being mounted on the third bearing part and passing through the second bearing part and fixedly connected to the rotating shaft, the supporting seat being sleeved on the rotating shaft and fixedly connected to the second bearing part so that the third bearing part When the bearing part is lifted or lowered relative to the second bearing part, the power transmission unit and the heating unit are lifted or lowered relative to the support unit; the power source includes a first power source that can drive the second bearing part and the third bearing part to be lifted or lowered synchronously and a second power source that can drive the third bearing part to be lifted or lowered relative to the second bearing part. When the first power source drives the second bearing part to lift or lower with the support unit, the third bearing part is used to lift or lower with the power transmission unit and the heating unit synchronously; when the second power source drives the third bearing part to lift or lower with the power transmission unit and the heating unit synchronously, the second bearing part and the support unit are stationary.

[0006] Optionally, when the first power source drives the second and third carrying members to rise synchronously, the third carrying member, carrying the heating unit, rises until the heating tray supports the substrate, or rises until the support ring and the heating tray jointly support the substrate. Optionally, when the second power source drives the third carrying member to rise, the third carrying member, carrying the heating unit, rises until the substrate is separated from the support ring.

[0007] Optionally, the support unit further includes a plurality of support rods located between the support ring and the support seat, and the support rods are non-fixedly connected to the support ring.

[0008] Optionally, when the second power source drives the third bearing part to rise, the third bearing part carries the power transmission unit and the heating unit to rise until the support rod is separated from the support ring.

[0009] Optionally, it further includes a magnetic fluid installed on the third bearing part, the magnetic fluid includes an inner ring fixedly connected to the power transmission unit, and the inner ring is used to rotate the heating unit through the power transmission unit.

[0010] Optionally, when the heating unit rotates in the first direction, the support ring is kept in a non-contact state with the heating tray and the substrate, and the heating unit rotates synchronously with the substrate.

[0011] Optionally, when the heating unit rotates along the first direction, the heating unit rotates synchronously with the substrate along with the supporting ring.

[0012] Optionally, when the heating unit rotates along a second direction, the support ring supports the substrate, and the substrate and the heating unit remain in a non-contact state, wherein the second direction is opposite to the first direction.

[0013] Optionally, a connecting unit is further included, which is connected to the heating unit and is used to eliminate the electric field change caused by the rotation and resetting of the heating unit.

[0014] Optionally, the connecting unit includes an elastic member and a radio frequency cable connected to the heating unit, and the elastic member drives the radio frequency cable to be reset when the heating unit rotates and resets.

[0015] Optionally, the radio frequency cable passes through the power transmission unit and extends along a bending direction of the elastic member.

[0016] Optionally, the connecting unit includes a slip ring and a radio frequency cable, the heating unit and the radio frequency cable are connected via the slip ring, and when the heating unit rotates and resets, the radio frequency cable remains stationary.

[0017] To achieve the above objectives and other related objectives, the present application also provides a thin film deposition method, comprising the following steps:

[0018] A thin film deposition method comprising the following steps:

[0019] S1: Place the substrate in the processing chamber and drive the heating tray to move the substrate up to the process position.

[0020] S2: perform a thin film deposition on the substrate surface;

[0021] S3: The inner ring of the magnetic fluid rotates synchronously with the heating unit from the initial position to a certain angle through the power transmission unit;

[0022] S4: The second power source drives the third carrier with the heating unit to descend to separate from the substrate, and the support ring supports the substrate;

[0023] S5: The power transmission unit rotates in the opposite direction with the heating unit to the initial position;

[0024] S6: The second power source drives the third carrier to rise synchronously with the heating unit, and the heating unit and the substrate rise to the process position;

[0025] S7: Repeat steps S2 to S6 until n times of thin film deposition are completed.

[0026] Optionally, in step S3, the elastic member is fixedly connected to the heating unit, and when the heating unit rotates, it stretches one end of the elastic member, causing the elastic member and the RF cable to deform. In step S5, when the heating unit rotates and resets, the elastic member rebounds to its initial shape with the RF cable.

[0027] Optionally, in step S3, the heating unit is fixedly connected to the slip ring so that the two can rotate synchronously along a first direction. In step S5, the power transmission unit rotates the rotor of the slip ring along a second direction, and the first direction is opposite to the second direction.

[0028] Optionally, in step S1, the step of driving the heating unit to carry the substrate to the process position includes: a first power source drives the second carrying part and the third carrying part to rise synchronously, the second carrying part carries the support ring to rise, and the third carrying part carries the heating tray to rise synchronously until the heating tray contacts the substrate, or rises until the heating tray and the support ring contact the substrate together; the second power source drives the third carrying part to continue to rise with the heating tray and the substrate to the process position.

[0029] As described above, according to the thin film deposition device and thin film deposition method of the present invention, the heating unit rotates with the substrate, ensuring the uniformity of the thin film deposited on the substrate surface by the plasma gas generated by the electric field dissociation process gas under the action of the radio frequency power supply, and the heating unit is connected to the connecting unit so that the electric field remains unchanged after the heating unit is rotated and reset.

[0030] Summary of the Figures

[0031] The features and performance of the present application are further described by the following examples and drawings.

[0032] FIG1 is a schematic structural diagram of a thin film deposition device according to the present invention.

[0033] FIG2 is a cross-sectional view of the thin film deposition apparatus according to the present invention, wherein the substrate is placed on the ends of the supporting pins.

[0034] FIG3 is a cross-sectional view of another embodiment of a thin film deposition apparatus according to the present invention.

[0035] 4A and 4B are schematic diagrams of different embodiments of thin film deposition devices, respectively, where the substrate is located at a process position.

[0036] FIG5 is a circuit diagram of the radio frequency power supply of the thin film deposition apparatus of the present invention providing radio frequency power to dissociate process gas.

[0037] Preferred embodiment of this application

[0038] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0039] For example, when describing the embodiments of the present invention, cross-sectional views of device structures may be partially enlarged to scale for ease of explanation. Furthermore, these schematic views are merely illustrative and should not limit the scope of the present invention. Furthermore, in actual manufacturing, three-dimensional dimensions, including length, width, and depth, should be included.

[0040] For ease of description, spatially relative terms such as "under," "below," "below," "below," "above," and "on" may be used herein to describe the relationship of one element or feature to other elements or features shown in the drawings. It will be understood that these spatially relative terms are intended to encompass orientations of the device in use or operation in addition to the orientation depicted in the drawings. Additionally, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may be present. As used herein, "between" is inclusive of both endpoints.

[0041] In the context of the present application, a structure described as a first feature being "above" a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where an additional feature is formed between the first and second features, such that the first and second features may not be in direct contact.

[0042] It should be noted that the illustrations provided in this embodiment are only used to schematically illustrate the basic concept of the present invention. Therefore, the illustrations only show components related to the present invention and are not drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed at will, and the component layout type may also be more complicated.

[0043] As shown in Figures 1 to 4B, this embodiment provides a thin film deposition apparatus, comprising a heating unit 100, a support unit 200, a power transmission unit 300, a magnetic fluid 400, a motor 500, a substrate supporting unit 600, a connecting unit 700, a power source 800, and a carrier 900. The motor 500 is used to drive the heating unit 100 to rotate, and the power source 800 is used to drive the heating unit 100 or the heating unit 100 and the support unit 200 to rise and fall together.

[0044] As shown in FIG. 2 , the heating unit 100 includes a heating tray 110 and a rotating shaft 120 for supporting the heating tray 110 . The rotating shaft 120 extends downward from the heating tray 110 and stably supports the heating tray 110 .

[0045] As shown in Figures 1 and 2, the support unit 200 includes a support ring 210 arranged around the heating tray 110, a support base 230 for supporting the support ring 210, and a plurality of support rods 220 located between the support ring 210 and the support base 230. The support base 230 is movably mounted on the rotating shaft 120. During the thin film deposition process, the rotating shaft 120 can be raised and lowered relative to the support base 230. With reference to Figures 4A or 4B, the inner diameter of the support ring 210 is smaller than the outer diameter of the substrate W. Thus, the support ring 210 supports the substrate W when in contact with the substrate W. The heating tray 110 includes a protrusion 111 protruding upward from its upper surface and an edge portion 112 arranged around the protrusion 111. The diameter of the protrusion 111 is smaller than the diameter of the substrate W.

[0046] As shown in Figures 4A and 4B, the support ring 210 includes a first step portion 211, a second step portion 212, and a slope 213 connecting the first step portion 211 and the second step portion 212. When the support ring 210 supports the substrate W, the slope 213 can serve as a guide. The height of the second step portion 212 is higher than the first step portion 211, and the first step portion 211 is located between the heating tray 110 and the substrate W. In one embodiment, as shown in Figure 4A, the height difference between the protrusion 111 and the edge portion 112 of the heating tray 110 is greater than the thickness of the first step portion 211. Specifically, the height difference is 1.5-2.9 mm, and the thickness of the first step portion 211 of the support ring 210 is 0.3-0.7 mm. The support ring 210 is fixedly connected to the support rod 220, and the support rod 220 can carry the support ring 210 to rise. In the thin film deposition process state, the support rod 220 drives the support ring 210 to rise, and the heating tray 110 also rises at the same time until the heating tray 110 or the support ring 210 and the heating tray 110 jointly support the substrate W. The support rod 220 stops rising, and the heating tray 110 continues to rise to the process position, as shown in Figure 4A. At this time, the upper and lower surfaces of the first step portion 211 of the support ring 210 are not in contact with the substrate W and the heating unit 100.

[0047] In another embodiment, as shown in FIG4B , the height difference between the raised portion 111 and the edge portion 112 of the heating tray 110 is the same as the thickness of the first step portion 211 , and the upper surface of the raised portion 111 is flush with the upper surface of the first step portion 211 to prevent the substrate W from shaking when they jointly support the substrate W. Specifically, the height difference between the raised portion 111 and the edge portion 112 is 0.3-0.7 mm. The support ring 210 is not fixedly connected to the support rod 220. During the thin film deposition process, the support ring 210 is separated from the support rod 220 and supported by the edge portion 112 of the heating tray 110. At this time, the upper surface of the first step portion 211 of the support ring 210 is in contact with the substrate W, and part of the lower surface of the support ring 210 is in contact with the heating tray 110, which can better conduct heat to the substrate W and prevent the edge temperature of the substrate W from being insufficient.

[0048] As shown in Figure 2, the substrate supporting unit 600 includes supporting pins 610 for supporting substrates W and a supporting base 620 fixedly connected to the supporting pins 610. The supporting base 620 is movably mounted on the outer side of the support base 230. When the support base 230 moves up and down, the position of the supporting base 620 remains unchanged. The supporting pins 610 extend through the heating tray 110, and the ends of the supporting pins 610 support the substrates W.

[0049] As shown in Figure 2, the power transmission unit 300 is connected between the rotating shaft 120 and the magnetic fluid 400. When the magnetic fluid 400 rotates, the power transmission unit 300 can drive the rotating shaft 120 to rotate. Specifically, the magnetic fluid 400 includes an inner ring 420 and an outer ring 410. The inner ring 420 can rotate relative to the outer ring 410. The inner ring 420 is connected between the power transmission unit 300 and the motor 500. When the motor 500 drives the inner ring 420 to rotate, the inner ring 420 drives the rotating shaft 120 to rotate through the power transmission unit 300. The motor 500 is located between the inner ring 420 and the outer ring 410 and inside the magnetic fluid 400.

[0050] As shown in Figure 5, the RF power supply D provides RF power to form an RF electric field between the upper electrode shower head S and the lower electrode heating unit 200, thereby exciting the process gas supplied by the upper electrode shower head S to dissociate into plasma gas, and the dissociated plasma gas is used to deposit a thin film on the substrate W. As shown in Figure 5, in one embodiment, the RF power supply D is connected to the upper electrode shower head S, and the lower electrode heating unit 200 is grounded through an RF cable. In another embodiment, the RF power supply D is connected to the lower electrode heating unit 200 through an RF cable, and the upper electrode shower head S is grounded (not shown). In addition, the capacitor C is adjusted to offset the inductance formed by the RF cable by adjusting the capacitance size, so that the impedance value in the circuit remains unchanged, thereby ensuring that the electric field remains unchanged.

[0051] 2 , the heating unit 100 is connected to the connecting unit 700, which is used to eliminate the electric field changes caused by the rotation and resetting of the heating unit 100. In one embodiment, the connecting unit 700 includes a retaining member 710, a radio frequency cable 720, and an elastic member 730. The elastic member 730 can be a spring or a drag chain. The power transmission unit 300 is fixedly connected to the retaining member 710. One end of the elastic member 730 is fixedly connected to the retaining member 710, and the other end is fixedly connected to the matcher 520. Therefore, when the heating unit 200 rotates in one direction or reverses in the other direction with the power transmission unit 300 and the retaining member 710, one end of the elastic member 730 stretches or rebounds along with the power transmission unit 300. One end of the RF cable 720, electrically connected to the heating unit 200, passes through a through-hole (not shown) in the power transmission unit 300, passes through the retaining member 710 and the elastic member 730, and is secured to the retaining member 710 and the elastic member 730 at multiple locations. It is then grounded or connected to the RF power source D. The RF cable 720 is secured to the retaining member 710 and the elastic member 730 at multiple locations using ropes or cable ties. The RF cable 720 extends along the bending direction of the elastic member 730, allowing it to move synchronously with the elastic member 730 as it stretches or rebounds. During the thin film deposition process, when the heating unit 100 rotates to reset, that is, rotates from its initial position to a set angle and then rotates back to its initial position, the RF cable 720 also moves synchronously with the heating unit 100. However, since the RF cable 720 is flexible, it does not return to its initial shape after the heating unit 100 returns to its initial position, causing changes in inductance and electric field, and the capacitance cannot be adjusted in real time based on the inductance changes. Therefore, in this embodiment, the RF cable 720 is fixed to the elastic member 730. When the heating unit 100 rotates to reset, the RF cable 720 returns to its initial shape due to the rebound effect of the elastic member 730, thereby ensuring that the inductance in the circuit remains unchanged. Specifically, the set rotation angle of the power transmission unit 300 can be 60 degrees. After the power transmission unit 300 rotates the heating unit 300 six times in one direction, the heating unit 100 can drive the substrate W to rotate a complete rotation. Other rotation angles that are divisible by 360 degrees can also be selected to ensure that the substrate W rotates a complete rotation after a few rotations. The matcher 520 is mounted below the fourth support portion 940. The retaining member 710 extends through the fourth support portion 940 and is fixedly connected to one end of the elastic member 730. Here, when the power transmission unit 300 rotates synchronously with the heating unit 100 and the retaining member 710, the elastic member 730 stretches and rebounds below the fourth support portion 940.

[0052] In another embodiment, in conjunction with Figures 3 and 5, the connection unit 700 includes a slip ring 740 and an RF cable 720. One end of the connection unit 700 is inserted into the power transmission unit 300 and electrically connected to the heating unit 200, and the other end is electrically connected to the adjustment capacitor C in the matcher 520 or electrically connected to the RF power supply D through the RF cable 720. When the power transmission unit 300 rotates with the heating unit 100 and the connection unit 700, the RF cable 720 is stationary, which does not cause the inductance to change, and the impedance value remains unchanged, so the electric field between the upper electrode shower head S and the lower electrode heating unit 100 remains unchanged. The bottom of the connection unit 700 is fixedly connected to the fourth supporting portion 940, and the RF cable 720 passes through the fourth supporting portion 940 and is grounded or connected to the RF power supply D.

[0053] As shown in Figures 1 and 2, the support portion 900 includes a first support portion 910, a second support portion 920, a third support portion 930, and a fourth support portion 940, arranged vertically from high to low. The power source 800 includes a first power source 810 and a second power source 820. The first power source 810 is connected between the first support portion 910 and the second support portion 920 to enable relative vertical movement between the first and second support portions 910, 920. The second power source 820 is connected between the second and third support portions 920, 930 to enable relative vertical movement between the second and third support portions 920, 930. Both the first power source 810 and the second power source 820 can be electric cylinders. For example, when the first power unit 810 extends, it drives the second support portion 920 downward, and when the first power unit 810 contracts, it drives the second support portion 920 upward. Among them, there are 2 or 3 first power sources 810 and 3 second power sources 820, which are evenly arranged between adjacent bearing parts. Preferably, the first power source 810 and the second power source 820 are selected as 3, so that the adjacent bearing parts are evenly stressed. The power transmission unit 300 passes through the third bearing part 930 and the second bearing part 920 from bottom to top, and is fixedly connected to the rotating shaft 120 that passes through the first bearing part 910 from top to bottom, and the power transmission unit 300 is fixedly connected to the magnetic fluid 400, and the magnetic fluid 400 is fixedly connected to the third bearing part 930. Therefore, when the second bearing part 920 and the third bearing part 930 move relative to each other, the power transmission unit 300 drives the rotating shaft 120 of the heating unit 100 to move up and down, thereby allowing the heating tray 110 of the heating unit 100 to move up and down. Here, because the support base 230 is sleeved on the rotating shaft 120 and passes through the first supporting portion 910, the bottom of the support base 230 is fixedly connected to the second supporting portion 920 via a flange (not shown). Therefore, when the second supporting portion 920 and the third supporting portion 930 move relative to each other, the power transmission unit 300 moves the heating unit 100 upward and downward, while the support base 230 and the support rod 220 remain stationary. When the second supporting portion 920 and the first supporting portion 910 move relative to each other, the support base 230 moves the support ring 210 and the support rod 220 upward and downward. At this time, because the second supporting portion 920 and the third supporting portion 930 are connected, the second power source 820 has become a hard connection. Therefore, the second supporting portion 920 moves upward and downward synchronously with the third supporting portion 930, and the third supporting portion 930 moves upward and downward synchronously with the power transmission unit 300, and the heating tray 110 also moves upward and downward synchronously. The two ends of the magnetic fluid 400 are respectively mounted on the third supporting portion 930 and the fourth supporting portion 940 . The other end of the elastic member 730 is fixedly connected to the fourth supporting portion 940 . Therefore, the other end of the elastic member 730 is indirectly fixedly connected to the third supporting portion 930 .

[0054] The thin film deposition method using the thin film deposition device of the present invention comprises the following steps:

[0055] S1: Place the substrate W in the processing chamber and drive the heating tray to move the substrate up to the process position.

[0056] In some embodiments, step S1 specifically includes the following steps S11-S13:

[0057] S11: placing a substrate W in a processing chamber. The substrate W is placed on the ends of the supporting pins 610 of the supporting unit 600 in the processing chamber.

[0058] S12: driving the heating tray 110 and the support ring 210 to rise simultaneously to the heating tray 11 or the heating tray 11 and the support ring 210 to contact the substrate W together;

[0059] In step S12, the first power source 810 can drive the second carrier part 920 and the third carrier part 930 to rise synchronously, then the support seat 230 fixedly connected to the second carrier part 920 rises synchronously with the support rod 220 and the support ring 210, and the power transmission unit 300 fixedly connected to the third carrier part 930 rises synchronously with the heating unit 200 until the heating tray 110 contacts the substrate W, or rises until the heating tray 110 and the support ring 210 contact the substrate W together.

[0060] S13: The heating tray 110 continues to rise to the process position with the substrate W or the substrate W and the support ring 210;

[0061] In step S13, in one embodiment, the support rods 220 are fixedly connected to the support ring 210, and the second power source 820 drives the third support member 930 upward. The power transmission unit 300, which is fixedly connected to the third support member 930, then continues to ascend to the process position with the heating unit 200 and the substrate W, while the support ring 210 remains stationary. In another embodiment, the support rods 220 are not fixedly connected to the support ring 210, and when the second power source 820 drives the third support member 930 upward, the heating unit 200, along with the support ring 210 and the substrate W, simultaneously ascends to the process position. Furthermore, in steps S2 and S3, the substrate may alternatively be moved to the process position by lowering the support unit 600 with the substrate W until the support pins 600 retract into the heating tray 110, and placing the substrate W on the heating tray 110 or the heating tray 110 and the support ring 210.

[0062] S2: perform a thin film deposition on the substrate surface;

[0063] S3: The magnetic fluid inner ring 420 rotates synchronously with the heating unit 100 from the initial position to a certain angle through the power transmission unit 300;

[0064] In step S3, the motor 500 drives the inner ring 420 to rotate. The inner ring 420 rotates synchronously with the heating unit 100 via the power transmission unit 300. The heating unit 100 rotates with the substrate W or the substrate W and the support ring 210 from the initial position. In one embodiment, the support rod 220 is fixedly connected to the support ring 210, and the heating unit 100 rotates with the substrate W while the support ring 210 remains stationary. In another embodiment, the support rod 220 is loosely connected to the support ring 210, and the heating unit 100 rotates synchronously with the substrate W and the support ring 210. Furthermore, the heating unit 100 and the connecting unit 700 move simultaneously. In one embodiment, the heating unit 100 stretches one end of the elastic member 730, causing the elastic member 730 to change its shape. In another embodiment, the heating unit 100 rotates with the rotor of the slip ring 740.

[0065] S4: The second power source 820 drives the third carrier 930 with the heating unit 100 to descend to separate from the substrate W, and the support ring 210 supports the substrate W;

[0066] In step S4, the second power source 820 drives the third carrier 930 to descend, and the heating unit 100 then descends synchronously. In one embodiment, the heating unit 100 lowers the substrate W with the substrate W until it contacts the support ring 210, whereupon the support ring 210 supports the substrate W, and the heating unit 100 continues to descend until it separates from the substrate W. In another embodiment, the heating unit 100 lowers the substrate W with the support ring 210 until the support ring 210 contacts the support rods 220, whereupon the support ring 210 is supported by the support rods 220, supporting the substrate W. The support ring 210 and the substrate W stop descending together, at which point the heating unit 100 continues to descend until it separates from the substrate W.

[0067] S5: The power transmission unit 300 rotates with the heating unit 100 in the opposite direction to the initial position;

[0068] The motor 500 rotates in the opposite direction with the power transmission unit 300 and the heating unit 100 to the initial position. In one embodiment, the power transmission unit 300 rotates with the elastic member 730, and the elastic member 730 rebounds to its initial shape. In another embodiment, the power transmission unit 300 rotates with the rotor of the slip ring 740.

[0069] S6: The second power source 820 drives the third carrier 930 to rise synchronously with the heating unit 100, and the heating unit 100 and the substrate W rise to the process position;

[0070] In step S6, the second power source 820 drives the third carrier 930 to rise, and the heating unit 100 rises synchronously. In one embodiment, the heating unit 100 rises with the substrate W until the substrate W separates from the support ring 210 and reaches the process position. In another embodiment, the heating unit 100 rises with the substrate W and the support ring 210 synchronously, and the support ring 210 separates from the support rods 220 and reaches the process position.

[0071] S7: Repeat S2-S6 until n times of thin film deposition are completed.

[0072] According to the thin film deposition apparatus and thin film deposition method of the present invention, the RF power supply D provides RF power to form an electric field between the upper electrode shower head S and the lower electrode heating unit 200, so that the electric field remains unchanged after the heating unit 200 rotates and resets.

[0073] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A thin film deposition device, characterized in that: include: A radio frequency power supply, used to provide radio frequency power to generate an electric field in the processing chamber; A heating unit, comprising a heating tray for heating the substrate and a rotating shaft supporting the heating tray; A supporting unit, comprising a supporting ring arranged around the heating tray and a supporting seat supporting the supporting ring; A power transmission unit, fixedly connected to the rotating shaft; The bearing part includes a second bearing part and a third bearing part, the power transmission unit is installed on the third bearing part, and penetrates the second bearing part and is fixedly connected to the rotating shaft, the support seat is sleeved on the rotating shaft and fixedly connected to the second bearing part so that when the third bearing part is lifted or lowered relative to the second bearing part, the power transmission unit and the heating unit are lifted or lowered relative to the support unit; a power source, comprising a first power source capable of driving the second bearing part and the third bearing part to rise and fall synchronously, and a second power source capable of driving the third bearing part to rise and fall relative to the second bearing part, When the first power source drives the second bearing part to lift the supporting unit, the third bearing part is used to lift the power transmission unit and the heating unit synchronously; when the second power source drives the third bearing part to lift the power transmission unit and the heating unit synchronously, the second bearing part and the supporting unit are stationary.

2. The thin film deposition device according to claim 1, characterized in that: When the first power source drives the second bearing part and the third bearing part to rise synchronously, the third bearing part with the heating unit rises to the heating tray to support the substrate, or rises to the support ring and the heating tray to jointly support the substrate.

3. The thin film deposition device according to claim 1, characterized in that: When the second power source drives the third carrying part to rise, the third carrying part carries the heating unit up until the substrate is separated from the supporting ring.

4. The thin film deposition device according to claim 1, characterized in that: The support unit further comprises a plurality of support rods located between the support ring and the support seat, wherein the support rods are non-fixedly connected to the support ring.

5. The thin film deposition device according to claim 4, characterized in that: When the second power source drives the third bearing part to rise, the third bearing part, together with the power transmission unit and the heating unit, rises until the support rod is separated from the support ring.

6. The thin film deposition device according to claim 1, characterized in that: It also includes a magnetic fluid installed on the third bearing part, and the magnetic fluid includes an inner ring fixedly connected to the power transmission unit, and the inner ring is used to rotate the heating unit through the power transmission unit.

7. The thin film deposition device according to claim 6, characterized in that: When the heating unit rotates in a first direction, the support ring is kept in a non-contact state with the heating tray and the substrate, and the heating unit rotates synchronously with the substrate.

8. The thin film deposition device according to claim 6, characterized in that: When the heating unit rotates along the first direction, the heating unit brings the supporting ring to rotate synchronously with the substrate.

9. The thin film deposition device according to claim 7 or 8, characterized in that: When the heating unit rotates along a second direction, the support ring supports the substrate, and the substrate and the heating unit remain in a non-contact state, wherein the second direction is the opposite direction of the first direction.

10. The thin film deposition device according to claim 6, characterized in that: It also includes a connecting unit, which is connected to the heating unit and is used to eliminate the electric field change caused by the rotation and resetting of the heating unit.

11. The thin film deposition device according to claim 10, characterized in that: The connecting unit comprises an elastic member and a radio frequency cable connected to the heating unit. When the heating unit rotates and resets, the elastic member drives the radio frequency cable to reset.

12. The thin film deposition device according to claim 10, characterized in that: The radio frequency cable passes through the power transmission unit and extends along a bending direction of the elastic member.

13. The thin film deposition device according to claim 10, characterized in that: The connecting unit comprises a slip ring and a radio frequency cable, the heating unit and the radio frequency cable are connected via the slip ring, and when the heating unit rotates and resets, the radio frequency cable remains stationary.

14. A thin film deposition method, characterized in that: The following steps are involved: S1: Place the substrate in the processing chamber and drive the heating tray to move the substrate up to the process position; S2: performing a thin film deposition on the substrate surface; S3: The inner ring of the magnetic fluid rotates synchronously with the heating unit from the initial position to a certain angle through the power transmission unit; S4: the second power source drives the third carrying part with the heating unit to descend to be separated from the substrate, and the supporting ring supports the substrate; S5: The power transmission unit rotates in the opposite direction with the heating unit to the initial position; S6: The second power source drives the third carrier to rise synchronously with the heating unit, and the heating unit rises with the substrate to the process position; S7: Repeat step S2 to step S6 until n times of thin film deposition are completed.

15. The thin film deposition method according to claim 14, characterized in that: In step S3, the elastic member is fixedly connected to the heating unit. When the heating unit rotates, one end of the elastic member is stretched, causing the elastic member and the RF cable to deform. In step S5, when the heating unit rotates and resets, the elastic member rebounds to its initial shape with the RF cable.

16. The thin film deposition method according to claim 14, characterized in that: In step S3, the heating unit is fixedly connected to the slip ring so that the two can rotate synchronously along a first direction. In step S5, the power transmission unit rotates the rotor of the slip ring along a second direction, and the first direction is opposite to the second direction.

17. The thin film deposition method according to claim 14, characterized in that: In step S1, the step of driving the heating unit to carry the substrate up to the process position includes: The first power source drives the second bearing part and the third bearing part to rise synchronously, the second bearing part rises with the support ring, and the third bearing part rises with the heating tray synchronously until the heating tray contacts the substrate, or until the heating tray and the support ring contact the substrate together; The second power source drives the third carrying part to continue to rise to the process position with the heating tray and the substrate.

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