Plasma-resistant glass, inner chamber component for semiconductor manufacturing process, and methods for manufacturing glass and component

Abstract

The present invention relates to a plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and methods for manufacturing the glass and the component and, specifically, to a plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and methods for manufacturing the glass and the component, wherein a Si-based oxide included in the plasma-resistant glass, even when contained in a high content, can be easily melted, and etching resistance and light transmittance can be improved.

Description

Plasma-resistant glass, components for use in chambers for semiconductor manufacturing processes, and their manufacturing methods

[0001] The present invention claims the benefit of Korean Patent Application No. 10-2023-0185338 filed with the Korean Intellectual Property Office on December 19, 2023, the entire contents of which are incorporated herein by reference. The present invention relates to plasma-resistant glass, components for use inside a chamber for a semiconductor manufacturing process, and a method for manufacturing the same, and more particularly, to plasma-resistant glass that can be easily melted even when it contains a high content of Si-based oxide included in the plasma-resistant glass, and can improve etching resistance and light transmittance, components for use inside a chamber for a semiconductor manufacturing process, and a method for manufacturing the same.

[0002] Plasma etching processes are used in semiconductor and / or display manufacturing. With the recent adoption of nanotechnology, the difficulty of etching has increased. Internal components of process chambers exposed to high-density plasma environments are primarily made of corrosion-resistant oxide ceramics, such as alumina (Al2O3) and yttria (Y2O3).

[0003] When polycrystalline materials are exposed to high-density plasma etching environments using fluorine-based gases for extended periods, localized erosion can cause particle loss, increasing the likelihood of contaminating particles. This can lead to defects in semiconductors and displays and negatively impact production yields. Furthermore, oxide-based ceramic materials have a high melting temperature, which limits workability.

[0004] Therefore, there is a need for technology development that can prevent thermal shock damage to existing plasma-resistant glass while having a low melting temperature, reduce the dielectric constant, and control the viscosity to easily form it into a desired shape.

[0005] Meanwhile, quartz has been used as a representative material for the focus ring of etching equipment for a long time due to its low cost, appropriate dielectric constant, and suitable etching characteristics.

[0006] As the plasma environment inside semiconductor chambers has become harsher, the replacement cycle of quartz has become shorter due to rapid etching, and various attempts are being made to replace it.

[0007] Recently, there have been many attempts to replace amorphous glass as a material for focus rings. However, because SiO2, a key ingredient for vitrification, has a strong network structure, producing glass with a high SiO2 content has proven challenging. Metals, such as Al and Ca, which are inevitably included in vitrification, increase the dielectric constant and pose a risk of increased contamination due to gases generated during the etching process, necessitating further improvement.

[0008] The technical problem to be achieved by the present invention is to provide plasma-resistant glass that can be easily melted even when containing a high content of Si-based oxide, improves etching resistance and light transmittance, and minimizes the generation of impurities during the etching process, components for use inside a chamber for a semiconductor manufacturing process, and a method for manufacturing them.

[0009] However, the problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned can be clearly understood by those skilled in the art from the description below.

[0010] One embodiment of the present invention provides a plasma-resistant glass comprising Si-based oxide at 75 wt% or more.

[0011] According to one embodiment of the present invention, the content of the Si-based oxide may be 80 wt% or more and 95 wt% or less.

[0012] According to one embodiment of the present invention, it may further include Al-based oxides, Ca-based oxides, and combinations thereof.

[0013] According to one embodiment of the present invention, the content of the Al-based oxide may be 1 wt% or more and 10 wt% or less, and the content of the Ca-based oxide may be 2 wt% or more and 15 wt% or less.

[0014] According to one embodiment of the present invention, the Si-based oxide may be SiO2, the Al-based oxide may be Al2O3, and the Ca-based oxide may be CaO.

[0015] According to one embodiment of the present invention, the dielectric constant may be 4 or more and 7 or less.

[0016] According to one embodiment of the present invention, the light transmittance may be 80% or more and 100% or less, the Vickers hardness may be 550 HV or more and 1,000 HV or less, and the glass transition temperature may be 500°C or more and 850°C or less.

[0017] According to one embodiment of the present invention, the thermal expansion coefficient is 4.0×10 -6 m / (m℃) or more than 6.0×10 -6 It may be less than m / (m℃).

[0018] According to one embodiment of the present invention, the etching rate by a mixed plasma of fluorine and argon (Ar) may be greater than 0 nm / min and less than or equal to 100 nm / min.

[0019] According to one embodiment of the present invention, the melting point may be 1,500°C or higher and 1,900°C or lower.

[0020] One embodiment of the present invention provides a chamber internal component for a semiconductor manufacturing process made of the above plasma-resistant glass.

[0021] According to one embodiment of the present invention, the internal component may be any one of a focus ring, an edge ring, a covering ring, a ring shower, an insulator, an EPD window, an electrode, a view port, an inner shutter, an electro static chuck, a heater, a chamber liner, a shower head, a CVD (Chemical Vapor Deposition) boat, a wall liner, a shield, a cold pad, a source head, an outer liner, a deposition shield, an upper liner, an exhaust plate, and a mask frame.

[0022] One embodiment of the present invention provides a method for manufacturing plasma-resistant glass, comprising the steps of: melting a composition comprising 80 wt% or more and 95 wt% or less of Si-based oxide, 1 wt% or more and 10 wt% or less of Al-based oxide, and 2 wt% or more and 15 wt% or less of Ca-based oxide; and cooling the molten composition.

[0023] According to one embodiment of the present invention, the melting temperature of the step of melting the composition may be 1,500°C or more and 1,900°C or less.

[0024] One embodiment of the present invention provides a method for manufacturing a chamber-internal component for a semiconductor manufacturing process, the method comprising: a step of melting the plasma-resistant glass; a step of injecting the melted plasma-resistant glass into a mold; and a step of annealing the injected plasma-resistant glass, wherein the melting temperature of the step of melting the plasma-resistant glass is 1,500°C or more and 1,900°C or less, and the temperature of the step of annealing is 400°C or more and 900°C or less.

[0025] A plasma-resistant glass according to one embodiment of the present invention can be easily melted even if it contains a high content of Si-based oxide, and can have a dielectric constant within a specific range.

[0026] The plasma-resistant glass according to one embodiment of the present invention has improved light transmittance and improved hardness, thereby improving mechanical properties, thereby improving durability in a plasma etching environment.

[0027] A chamber internal component for a semiconductor manufacturing process according to one embodiment of the present invention can improve plasma resistance, extend the replacement cycle of the component, and minimize impurities generated during the etching process.

[0028] A method for manufacturing plasma-resistant glass according to one embodiment of the present invention can easily manufacture plasma-resistant glass and prevent damage due to thermal shock in a high-temperature atmosphere.

[0029] A method for manufacturing plasma-resistant glass according to one embodiment of the present invention can improve formability by controlling the viscosity of the composition.

[0030] A method for manufacturing a component for use inside a chamber for a semiconductor manufacturing process according to one embodiment of the present invention can manufacture components having various shapes, prevent damage due to thermal shock in a high-temperature atmosphere, and easily manufacture components.

[0031] Figure 1 is a flow chart of a method for manufacturing plasma-resistant glass according to one embodiment of the present invention.

[0032] Figure 2 is a flowchart of a method for manufacturing a chamber internal component for a semiconductor manufacturing process according to one embodiment of the present invention.

[0033] Figure 3 is a photograph of plasma-resistant glass of Example 1 according to one embodiment of the present invention.

[0034] Figure 4 is a photograph of plasma-resistant glass of Example 2 according to one embodiment of the present invention.

[0035] Figure 5 is a photograph of plasma-resistant glass of Example 3 according to one embodiment of the present invention.

[0036] Figure 6 is a photograph of plasma-resistant glass of Example 5 according to one embodiment of the present invention.

[0037] Figure 7 is an enlarged photograph taken after plasma etching of Comparative Example 1.

[0038] Figure 8 is an enlarged photograph taken after plasma etching in Example 6.

[0039] Figure 9 is an EDS photograph of particles generated after plasma etching of Comparative Example 1.

[0040] Figure 10 is an EDS photograph of particles generated after plasma etching in Example 1.

[0041] Figure 11 is an EDS photograph of particles generated after plasma etching in Example 6.

[0042] Figure 12 is an enlarged photograph of the surface after plasma etching of Reference Example, Comparative Example 1, and Examples 1 and 6.

[0043] In this specification, when a part is said to "include" a certain component, this does not mean that it excludes other components, but rather that it may include other components, unless otherwise specifically stated.

[0044] In this specification, “A and / or B” means “A and B, or A or B.”

[0045] In this specification, “plasma resistance” may mean that the resistance to etching by plasma is high, and that the etching speed by plasma is implemented at a low rate.

[0046] The drawings attached to this specification illustrate preferred embodiments of the invention and, together with the description of the invention, serve to explain the principles of the invention, but are not intended to limit the scope of the invention. Furthermore, the shape, size, scale, or ratio of elements in the drawings included in this specification may be exaggerated for clarity.

[0047] Hereinafter, the present invention will be described in more detail.

[0048] One embodiment of the present invention provides a plasma-resistant glass comprising Si-based oxide at 75 wt% or more.

[0049] The plasma-resistant glass according to one embodiment of the present invention can be easily melted even if it contains a high content of Si-based oxide, and can have a dielectric constant within a specific range. Furthermore, the plasma-resistant glass according to one embodiment of the present invention has improved light transmittance and improved hardness, thereby improving mechanical properties, thereby enhancing durability in a plasma etching environment.

[0050] According to one embodiment of the present invention, the content of the Si-based oxide in the plasma-resistant glass is 75 wt% or more. Specifically, the content of the Si-based oxide in the plasma-resistant glass may be 75 wt% or more and less than 100 wt%, 76 wt% or more and 99 wt% or less, 77 wt% or more and 98 wt% or less, 78 wt% or more and 97 wt% or less, 79 wt% or more and 96 wt% or less, or 80 wt% or more and 95 wt% or less. By controlling the content of the Si-based oxide within the above-described range, an appropriate level of dielectric constant can be implemented, impurities generated during plasma etching can be minimized, and costs can be reduced.

[0051] According to one embodiment of the present invention, the content of the Si-based oxide may be 80 wt% or more and 95 wt% or less. Specifically, the content of the Si-based oxide may be 81 wt% or more and 94 wt% or less, 82 wt% or more and 93 wt% or less, 83 wt% or more and 92 wt% or less, 84 wt% or more and 91 wt% or less, 85 wt% or more and 90 wt% or less, 86 wt% or more and 89 wt% or less, or 87 wt% or more and 88 wt% or less. By controlling the content of the Si-based oxide within the above-described range, an appropriate level of dielectric constant can be implemented, impurities generated during plasma etching can be minimized, and the cost can be reduced.

[0052] According to one embodiment of the present invention, it may further include an Al-based oxide, a Ca-based oxide, and a combination thereof. Preferably, the plasma-resistant glass may include an Al-based oxide and a Ca-based oxide. By including additional metal oxides within the above-described range, plasma resistance can be improved, contamination generated during the etching process can be minimized, and light transmittance can be improved.

[0053] According to one embodiment of the present invention, the plasma-resistant glass may be composed only of the Si-based oxide, the Al-based oxide, the Ca-based oxide, and unavoidable impurities. Specifically, the plasma-resistant glass may be composed only of SiO2, Al2O3, CaO, and unavoidable impurities. More specifically, the plasma-resistant glass may not contain any other components other than SiO2, Al2O3, CaO, and unavoidable impurities. As described above, by controlling the components included in the plasma-resistant glass, an appropriate level of dielectric constant can be implemented, impurities generated during plasma etching can be minimized, and costs can be reduced.

[0054] According to one embodiment of the present invention, the content of the Al-based oxide may be 1 wt% or more and 10 wt% or less. Specifically, the content of the Al-based oxide in the plasma-resistant glass may be 2 wt% or more and 9 wt% or less, 3 wt% or more and 8 wt% or less, 4 wt% or more and 7 wt% or less, or 5 wt% or more and 6 wt% or less. By controlling the content of the Al-based oxide within the above-described range, outgasing can be prevented, the generation of particles can be suppressed, and the wear resistance of components inside a chamber for a semiconductor manufacturing process can be improved.

[0055] According to one embodiment of the present invention, the content of the Ca-based oxide may be 2 wt% or more and 15 wt% or less.

[0056] According to one embodiment of the present invention, the Si-based oxide may contain O atoms with Si atoms as the central atom. Specifically, the Si-based oxide is preferably SiO2. As described above, by selecting the Si-based oxide containing O atoms with Si atoms as the central atom, the basic properties of the plasma-resistant glass can be secured, durability and reliability can be improved, and the processing of the plasma-resistant glass can be facilitated, thereby reducing the production cost of the parts.

[0057] According to one embodiment of the present invention, the Al-based oxide may contain O atoms with Al atoms as the central atom. Specifically, the Al-based oxide is preferably Al2O3. As described above, by selecting the Al-based oxide containing O atoms with Al atoms as the central atom, outgasing can be prevented, the generation of particles can be suppressed, and the wear resistance of components inside a chamber for a semiconductor manufacturing process can be improved.

[0058] According to one embodiment of the present invention, the Ca-based oxide may be CaO. As described above, by selecting the Ca-based oxide as CaO, the coefficient of thermal expansion and glass transition temperature of the glass can be lowered, thereby minimizing thermal shock at high temperatures and improving the durability of components inside a chamber for a semiconductor manufacturing process, and implementing a dielectric constant within an appropriate range.

[0059] According to one embodiment of the present invention, the dielectric constant may be 4 or more and 7 or less. Specifically, the dielectric constant may be 4.20 or more and 6.80 or less, 4.40 or more and 6.60 or less, 4.60 or more and 6.40 or less, 4.80 or more and 6.20 or less, 5.00 or more and 6.00 or less, 5.20 or more and 5.80 or less, or 5.40 or more and 5.60 or less. Methods for measuring the dielectric constant include a capacitance method using an LCR meter, a reflectance coefficient method using a network analyzer, a resonant frequency method, etc. As an example of a method for measuring the dielectric constant, the capacitance method using an LCR meter is mainly used to measure low-frequency characteristics (kHZ, MHz), and the dielectric constant can be determined from the physical size and capacitance of the capacitor. More specifically, it can mean measuring the dielectric constant in the frequency range of 20 Hz to 100 Hz using the Keysight E4990A Impedence Analyzer. By implementing the dielectric constant of the plasma-resistant glass in the above-mentioned range, thermal shock at high temperatures can be minimized, the durability of components inside a chamber for a semiconductor manufacturing process can be improved, and light transmittance and durability can be improved.

[0060] According to one embodiment of the present invention, the light transmittance of the plasma-resistant glass may be 80% or more and 100% or less. Specifically, the light transmittance of the plasma-resistant glass may be 82% or more and 98% or less, 85% or more and 95% or less, or 87% or more and 92% or less. In the present specification, “light transmittance” may mean a value measured using a haze meter (JCH-300S, Oceanoptics Co.). By implementing the light transmittance of the plasma-resistant glass within the above-described range, the melting degree of the plasma-resistant glass can be improved while simultaneously implementing high vitrification.

[0061] According to one embodiment of the present invention, the Vickers hardness of the plasma-resistant glass may be 550 HV or more and 1,000 HV or less. The Vickers hardness of the above plasma glass may be 560 HV or more and 980 HV or less, 570 HV or more and 950 HV or less, 580 HV or more and 930 HV or less, 600 HV or more and 900 HV or less, 620 HV or more and 880 HV or less, 650 HV or more and 850 HV or less, 680 HV or more and 820 HV or less, 690 HV or more and 810 HV or less, 700 HV or more and 800 HV or less, 710 HV or more and 790 HV or less, 720 HV or more and 780 HV or less, 730 HV or more and 770 HV or less, or 740 HV or more and 760 HV or less. In this specification, “Vickers hardness” may refer to a value measured using a Vickers hardness tester (Helmut Fischer, FISCHERSCOPE HM-2000). By implementing the Vickers hardness of the plasma-resistant glass within the above-described range, the mechanical properties can be increased and durability in a plasma etching environment can be improved.

[0062] According to one embodiment of the present invention, the thermal expansion coefficient is 4.0×10 -6 m / (m℃) or more than 6.0×10 -6m / (m℃) or less. Specifically, the coefficient of thermal expansion of the plasma-resistant glass is 4.1×10 -6 m / (m℃) or more than 5.9×10 -6 m / (m℃) or less, 4.2×10 -6 m / (m℃) or more than 5.8×10 -6 m / (m℃) or less, 4.3×10 -6 m / (m℃) or more than 5.7×10 -6 m / (m℃) or less, 4.4×10 -6 m / (m℃) or more than 5.6×10 -6 m / (m℃) or less, 4.5×10 -6 m / (m℃) or more than 5.5×10 -6 m / (m℃) or less, 4.6×10 -6 m / (m℃) or more than 5.4×10 -6 m / (m℃) or less, 4.7×10 -6 m / (m℃) or more than 5.3×10 -6 m / (m℃) or less, 4.8×10 -6 m / (m℃) or more than 5.2×10 -6 m / (m℃) or less or 4.9×10 -6 m / (m℃) or more than 5.1×10 -6 It may be m / (m℃) or less. By controlling the coefficient of thermal expansion of the plasma-resistant glass within the above-described range, damage to components due to thermal shock can be prevented, thereby improving durability.

[0063] According to one embodiment of the present invention, the etching rate by the mixed plasma of fluorine and argon (Ar) may be greater than 0 nm / min and less than 100 nm / min. Specifically, the etching rate by the mixed plasma of fluorine and argon (Ar) of the plasma-resistant glass may be greater than 0 nm / min and less than 95 nm / min, greater than 10 nm / min and less than 90 nm / min, greater than 20 nm / min and less than 85 nm / min, greater than 30 nm / min and less than 80 nm / min, or greater than 35 nm / min and less than 65 nm / min. By implementing the etching rate by the mixed plasma of fluorine and argon (Ar) in the above-described range, the internal components of the chamber for the semiconductor manufacturing process can implement a low etching rate for the plasma, thereby improving the use time in the semiconductor manufacturing process.

[0064] According to one embodiment of the present invention, the melting point may be 1,500°C or more and 1,900°C or less. In the present specification, the melting point may mean the melting temperature. Specifically, the above plasma-resistant glass has a melting point of 1,510 ℃ to 1,890 ℃, 1,520 ℃ to 1,880 ℃, 1,530 ℃ to 1,870 ℃, 1,540 ℃ to 1,860 ℃, 1,550 ℃ to 1,850 ℃, 1,560 ℃ to 1,840 ℃, 1,570 ℃ to 1,830 ℃, 1,580 ℃ to 1,820 ℃, 1,590 ℃ to 1,810 ℃, 1,600 ℃ to 1,800 ℃, 1,610 ℃ to 1,790 ℃, 1,620 ℃ to 1,780 ℃, It may be 1,630 ℃ or more and 1,770 ℃ or less or 1,640 ℃ or more and 1,760 ℃ or less. By controlling the melting point of the plasma-resistant glass within the above-described range, the viscosity of the melt of the plasma-resistant glass can be controlled, and the workability of the process using the plasma-resistant glass can be improved.

[0065] According to one embodiment of the present invention, the glass transition temperature of the plasma-resistant glass may be 500°C or more and 850°C or less. Specifically, the glass transition temperature of the plasma-resistant glass may be 520°C or more and 830°C or less, 550°C or more and 800°C or less, 570°C or more and 780°C or less, 590°C or more and 760°C or less, 600°C or more and 740°C or less, 620°C or more and 720°C or less, 640°C or more and 700°C or less, or 660°C or more and 680°C or less. By controlling the glass transition temperature of the plasma-resistant glass within the above-described range, the thermal shock of components for use inside a chamber for a semiconductor manufacturing process at high temperatures can be minimized, and the durability can be improved.

[0066] According to one embodiment of the present invention, the viscosity of the molten composition is 1 poise or more and 10 poise or more at 1,500 ℃ or more and 1,900 ℃ or less or 1,600 ℃ or more and 1,800 ℃ or less. 9 poise or less. Specifically, the viscosity of the molten composition may be 10 poise or more and 10 poise or less at 1,650°C or more and 1,750°C or less. 8 Poise or less, 10 2 Poise 10 or higher 7 Poise or less, 10 3 Poise 10 or higher 6 poise or less or 10 4 Poise 10 or higher 5 poise or less. By controlling the viscosity of the molten composition within the above-described range, the formability of the plasma glass can be improved.

[0067] According to one embodiment of the present invention, the plasma-resistant glass may be amorphous. By implementing the structure of the plasma-resistant glass as amorphous as described above, the durability of components using the plasma-resistant glass can be improved, while at the same time reducing the etching rate due to plasma.

[0068] According to one embodiment of the present invention, the plasma-resistant glass may be formed by melting a composition containing SiO2, Al2O3, and CaO. More specifically, the plasma-resistant glass may be formed by melting a composition containing SiO2, Al2O3, and CaO. As described above, by forming the plasma-resistant glass by melting the composition, each component can be uniformly distributed in the plasma-resistant glass, and an etching rate can be uniformly implemented over the entire area of ​​the plasma-resistant glass.

[0069]

[0070] One embodiment of the present invention provides a chamber internal component for a semiconductor manufacturing process made of the above plasma-resistant glass.

[0071] A chamber internal component for a semiconductor manufacturing process according to one embodiment of the present invention can improve plasma resistance, extend the replacement cycle of the component, and minimize impurities generated during the etching process.

[0072] According to one embodiment of the present invention, the internal component may be any one of a focus ring, an edge ring, a covering ring, a ring shower, an insulator, an EPD window, an electrode, a view port, an inner shutter, an electrostatic chuck, a heater, a chamber liner, a shower head, a CVD (Chemical Vapor Deposition) boat, a wall liner, a shield, a cold pad, a source head, an outer liner, a deposition shield, an upper liner, an exhaust plate, and a mask frame. By using the internal component described above, the resistance to plasma in the semiconductor manufacturing process is improved, the use time is extended, and the cost required for semiconductor manufacturing can be minimized.

[0073]

[0074] One embodiment of the present invention provides a method for manufacturing plasma-resistant glass, comprising the steps of: melting a composition comprising 80 wt% or more and 95 wt% or less of Si-based oxide, 1 wt% or more and 10 wt% or less of Al-based oxide, and 2 wt% or more and 15 wt% or less of Ca-based oxide (S11); and cooling the molten composition (S13).

[0075] A method for manufacturing plasma-resistant glass according to one embodiment of the present invention can easily manufacture plasma-resistant glass and prevent damage due to thermal shock in a high-temperature atmosphere. Furthermore, the method for manufacturing plasma-resistant glass according to one embodiment of the present invention can improve formability by controlling the viscosity of the composition.

[0076] FIG. 1 is a flowchart of a method for manufacturing plasma-resistant glass according to one embodiment of the present invention. Referring to FIG. 1, the method for manufacturing plasma-resistant glass according to one embodiment of the present invention will be described in detail.

[0077] According to one embodiment of the present invention, a step (S11) of melting a composition including 80 wt% or more and 95 wt% or less of Si-based oxide, 1 wt% or more and 10 wt% or less of Al-based oxide, and 2 wt% or more and 15 wt% or less of Ca-based oxide is included. From the above, the components of the plasma-resistant glass are controlled, and by controlling the content of the components, the dielectric constant of the plasma-resistant glass can be appropriately implemented, damage to the plasma-resistant glass due to thermal shock in a high-temperature atmosphere can be prevented, the melting temperature can be implemented low, light transmittance and durability can be improved, and the viscosity of the melt can be controlled to easily manufacture a product having a complex shape.

[0078] According to one embodiment of the present invention, the melting step (S11) may be performed by placing the composition in a platinum crucible and melting it. By melting the composition in a platinum crucible as described above, the components eluted from the crucible can be minimized and the properties of the plasma-resistant glass can be realized.

[0079] According to one embodiment of the present invention, the melting temperature of the step (S11) of melting the composition may be 1,500°C or more and 1,900°C or less. Specifically, the melting temperature of the step of melting the composition is 1,510 ℃ or more and 1,890 ℃ or less, 1,520 ℃ or more and 1,880 ℃ or less, 1,530 ℃ or more and 1,870 ℃ or less, 1,540 ℃ or more and 1,860 ℃ or less, 1,550 ℃ or more and 1,850 ℃ or less, 1,560 ℃ or more and 1,840 ℃ or less, 1,570 ℃ or more and 1,830 ℃ or less, 1,580 ℃ or more and 1,820 ℃ or less, 1,590 ℃ or more and 1,810 ℃ or less, 1,600 ℃ or more and 1,800 ℃ or less, 1,610 ℃ or more and 1,790 ℃ or less, 1,620 ℃ or more and 1,780 ℃ or less. It may be 1,630 ℃ or more and 1,770 ℃ or less, or 1,640 ℃ or more and 1,760 ℃ or less. By controlling the melting temperature of the step of melting the composition within the above-described range, the viscosity of the molten composition can be controlled, thereby improving the workability of the process of manufacturing the plasma-resistant glass.

[0080] According to one embodiment of the present invention, a step (S13) of cooling the molten glass composition is included. By including the step of cooling the molten glass composition as described above, the crystal structure of the plasma-resistant glass can be controlled and breakage due to rapid thermal changes can be prevented.

[0081] According to one embodiment of the present invention, the temperature of the cooling step (S13) may be room temperature. By controlling the temperature of the cooling step within the above-described range, the crystallinity of the plasma-resistant glass can be controlled, and melting can be easily performed during the process of manufacturing components for use inside a chamber for the semiconductor manufacturing process.

[0082]

[0083] One embodiment of the present invention provides a method for manufacturing a component for use inside a chamber for a semiconductor manufacturing process, the method comprising: a step (S21) of melting the plasma-resistant glass; a step (S23) of injecting the melted plasma-resistant glass into a mold; and a step (S25) of annealing the injected plasma-resistant glass, wherein the melting temperature of the step (S21) of melting the plasma-resistant glass is 1,500°C or more and 1,900°C or less, and the temperature of the step (S25) of annealing is 400°C or more and 900°C or less.

[0084] A method for manufacturing a component for use inside a chamber for a semiconductor manufacturing process according to one embodiment of the present invention can manufacture components having various shapes, prevent damage due to thermal shock in a high-temperature atmosphere, and easily manufacture components.

[0085] FIG. 2 is a flowchart illustrating a method for manufacturing internal components for a chamber for a semiconductor manufacturing process according to an embodiment of the present invention. Referring to FIG. 2, a method for manufacturing internal components for a chamber for a semiconductor manufacturing process according to an embodiment of the present invention will be described in detail.

[0086] According to one embodiment of the present invention, the method for manufacturing a chamber-internal component for the semiconductor manufacturing process includes a step of melting the plasma-resistant glass (S21). By including the step of melting the plasma-resistant glass (S21) as described above, the workability of the process for manufacturing a chamber-internal component for the semiconductor manufacturing process is improved, and at the same time, by injecting a molten plasma-resistant glass into a mold, the component can be formed into various shapes.

[0087] According to one embodiment of the present invention, the method for manufacturing a component for use inside a chamber for the semiconductor manufacturing process includes a step (S23) of injecting the molten plasma-resistant glass into a mold. As described above, by injecting the molten plasma-resistant glass into a mold, components of various shapes can be manufactured.

[0088] According to one embodiment of the present invention, the mold may have any one shape among a focus ring, an edge ring, a cover ring, a ring shower, an insulator, an EPD window, an electrode, a view port, an inner shutter, an electrostatic chuck, a heater, a chamber liner, a shower head, a CVD (Chemical Vapor Deposition) boat, a wall liner, a shield, a cold pad, a source head, an outer liner, a deposition shield, an upper liner, an exhaust plate, and a mask frame. By implementing the shape of the mold in various ways as described above, the shape of the part can be easily implemented, thereby reducing the manufacturing time.

[0089] According to one embodiment of the present invention, the method for manufacturing a component for use inside a chamber for the semiconductor manufacturing process includes a step (S25) of annealing the injected plasma-resistant glass. By including the step of annealing the injected plasma-resistant glass as described above, the stress caused by heat generated in the component manufactured by injection into the mold is minimized, thereby improving the durability of the component and minimizing thermal shock at high temperatures.

[0090] According to one embodiment of the present invention, the melting temperature of the step (S21) of melting the plasma-resistant glass may be 1,500°C or more and 1,900°C or less. Specifically, the melting temperature of the step (S21) of melting the plasma-resistant glass is 1,510 ℃ or more and 1,890 ℃ or less, 1,520 ℃ or more and 1,880 ℃ or less, 1,530 ℃ or more and 1,870 ℃ or less, 1,540 ℃ or more and 1,860 ℃ or less, 1,550 ℃ or more and 1,850 ℃ or less, 1,560 ℃ or more and 1,840 ℃ or less, 1,570 ℃ or more and 1,830 ℃ or less, 1,580 ℃ or more and 1,820 ℃ or less, 1,590 ℃ or more and 1,810 ℃ or less, 1,600 ℃ or more and 1,800 ℃ or less, 1,610 ℃ or more and 1,790 ℃ or less, 1,620 ℃ or more It may be 1,780 ℃ or less, 1,630 ℃ or more and 1,770 ℃ or less, or 1,640 ℃ or more and 1,760 ℃ or less. By controlling the melting temperature of the step (S21) of melting the plasma-resistant glass within the above-described range, the viscosity of the molten composition can be controlled, thereby improving the workability of the process of manufacturing the plasma-resistant glass.

[0091] According to one embodiment of the present invention, the temperature of the annealing step (S25) may be 400°C or more and 900°C or less. Specifically, the temperature of the annealing step is 430°C or more and 890°C or less, 450°C or more and 880°C or less, 470°C or more and 870°C or less, 500°C or more and 860°C or less, 550°C or more and 850°C or less, 560°C or more and 840°C or less, 570°C or more and 830°C or less, 580°C or more and 820°C or less, 590°C or more and 810°C or less, 600°C or more and 800°C or less, 610°C or more and 790°C or less, 620°C or more and 780°C or less, 630°C or more and 770°C or less, 640°C or more and 760°C or less, 650°C or more and 750°C or less, 660°C or more It may be 740°C or less, 670°C or more and 730°C or less, 680°C or more and 720°C or less, or 690°C or more and 710°C or less. By controlling the temperature of the annealing step within the above-described range, the heat-induced stress formed within the components inside the chamber for the semiconductor manufacturing process can be reduced, and the thermal shock at high temperatures can be minimized, thereby improving the durability of the components.

[0092] According to one embodiment of the present invention, the method may further include a step (S27) of processing a precursor for a chamber-internal component for a semiconductor manufacturing process manufactured using the annealed plasma-resistant glass. By processing the precursor for a chamber-internal component for the semiconductor manufacturing process as described above, precise components can be manufactured.

[0093] Hereinafter, the present invention will be described in detail using examples. However, the examples according to the present invention may be modified in various ways, and the scope of the present invention is not limited to the examples described below. The examples in this specification are provided to more fully explain the present invention to those of ordinary skill in the art.

[0094]

[0095] A composition was prepared by mixing the ingredients and contents shown in Table 1 below. Thereafter, the composition was heated to 1,700°C for 4 hours to melt it, and then cooled to room temperature to prepare plasma-resistant glass.

[0096] <Reference example>

[0097] Quartz (SiO2 100 wt%) was prepared.

[0098] Comparison of ingredients Example 1 Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 SiO2 (weight%) 47.1395.2391.2487.8784.9882.4780.27 Al2O3 (weight%) 18.951.713.144.355.396.297.08 CaO (weight%) 33.923.065.627.789.6311.2412.65

[0099] <Experimental Example 1: Measurement of the molten state of plasma-resistant glass>

[0100] After placing the above examples 1 to 3 and 5 in a platinum crucible, they were heated at 1,700°C and 1 atm for 4 hours, and then the appearance was measured.

[0101] FIG. 3 is a photograph of plasma-resistant glass according to Example 1 according to an embodiment of the present invention. FIG. 4 is a photograph of plasma-resistant glass according to Example 2 according to an embodiment of the present invention. FIG. 5 is a photograph of plasma-resistant glass according to Example 3 according to an embodiment of the present invention. FIG. 6 is a photograph of plasma-resistant glass according to Example 5 according to an embodiment of the present invention.

[0102] Referring to the above figures 3 to 6, it was confirmed that Examples 1 to 3 and 5 were all melted and vitrified without any unmelted portion.

[0103] <Experimental Example 2: Dielectric Constant Measurement>

[0104] For the above examples, comparative examples, and reference examples, the dielectric constants were measured at a measurement frequency of 1 MHz using an LCR measuring instrument (Keysight E4990A Impedence Analyzer) using the electrostatic capacity method, and the results are summarized in Table 3 below.

[0105] <Experimental Example 3: Measurement of Light Transmittance>

[0106] The above examples, comparative examples and reference examples were processed to a thickness of 1 mm, and the light transmittance was measured in the range of 380 nm to 780 nm using a spectrophotometer (SD-4000, NIPPON DENSHOKU), and the results are summarized in Table 3 below.

[0107] <Experimental Example 4: Analysis of Particle Contamination Components According to Etching>

[0108] Etching was performed for the above examples and comparative examples under the conditions shown in Table 2 below. After performing etching for the above examples and comparative examples, component analysis of particle contamination was performed using SEM-EDS (bruker X FLASH).

[0109] Etching environmentCF4 mixed gas environmentRF POWER(W)600RF POWER, BIAS(W)150CF4 flow rate(SCCM)30Ar flow rate(SCCM)10O2 flow rate(SCCM)5Pressure10Etching time(min)60

[0110] Reference Preliminary Comparative Example 1 Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Dielectric constant @ 1MHz 4~5 10 555 666 Light transmittance (%) 9 2 8 8 9 0 9 0 8 9 8 9 8 8 9

[0111] Referring to Table 3 above, it was confirmed that Examples 1 to 6 had dielectric constants and optical transmittances at levels similar to those of the reference example.

[0112] In comparison, examples 1 to 6 showed dielectric constants of 6 or less, but comparative example 1 showed a rapid increase in dielectric constant to 10.

[0113] Meanwhile, Fig. 7 is an enlarged photograph taken after plasma etching of Comparative Example 1. Fig. 8 is an enlarged photograph taken after plasma etching of Example 6. Referring to Figs. 7 and 8, it was confirmed that contamination occurred in Comparative Example 1 due to a reaction between the alkali metal and the gas generated during the etching process after plasma etching. In contrast, it was confirmed that no contamination occurred in Example 6.

[0114] Furthermore, Fig. 9 is an EDS photograph of particles generated after plasma etching of Comparative Example 1. Fig. 10 is an EDS photograph of particles generated after plasma etching of Example 1. Fig. 11 is an EDS photograph of particles generated after plasma etching of Example 6. Specifically, when EDS of particles generated after plasma etching of Comparative Example 1, Example 1, and Example 6 are taken and analyzed for components, components and compositions as shown in Table 4 below are detected.

[0115] Comparative Example 1 (unit wt%)Example 1 (unit wt%)Example 6 (unit wt%)Si31.4942.6881.58Al10.650.64no detectedCa4.10no detectedno detectedO2.7321.49no detectedF46.184.866.53C4.8530.3011.03

[0116] Referring to Table 4 above, in the case of Comparative Example 1, it was confirmed that contaminants due to Al and Ca were generated in large quantities during the etching process, but in Examples 1 and 6, almost no contaminants were generated.

[0117] Furthermore, Fig. 12 is an enlarged photograph of the surface after plasma etching of Reference Example, Comparative Example 1, and Examples 1 and 6. Referring to Fig. 12, it was confirmed that no damage occurred on the surface after plasma etching of Comparative Example 1 and Examples 1 and 6. In contrast, it was confirmed that damage occurred on the surface of the Reference Example after plasma etching.

[0118] [Explanation of symbols]

[0119] S 11: Composition melting stage

[0120] S 13: Cooling stage

[0121] S 21: Plasma-resistant glass melting stage

[0122] S 23: Mold injection stage

[0123] S 25: Annealing step

[0124] S 27: Processing stage

Claims

A plasma-resistant glass comprising a Si-based oxide of 1.75 wt% or more.

2. In claim 1, A plasma-resistant glass having a content of the above Si-based oxide of 80 wt% or more and 95 wt% or less.

3. In claim 1, A plasma-resistant glass further comprising Al-based oxides, Ca-based oxides, and combinations thereof.

4. In claim 3, The content of the above Al oxide is 1 wt% or more and 10 wt% or less, A plasma-resistant glass having a content of the above Ca-based oxide of 2 wt% or more and 15 wt% or less.

5. In claim 3, The above Si-based oxide is SiO2, The above Al oxide is Al2O3. A plasma-resistant glass wherein the above Ca-based oxide is CaO.

6. In claim 1, Plasma-resistant glass having a dielectric constant of 4 or more and 7 or less.

7. In claim 1, The light transmittance is 80% or more and 100% or less, Vickers hardness is 550 HV or more and 1,000 HV or less, Plasma-resistant glass having a glass transition temperature of 500°C to 850°C.

8. In claim 1, The coefficient of thermal expansion is 4.0×10 -6 m / (m℃) or more than 6.0×10 -6 Plasma-resistant glass with a temperature of m / (m℃) or less.

9. In claim 1, Plasma-resistant glass having an etching rate of more than 0 nm / min and less than 100 nm / min by a mixed plasma of fluorine and argon (Ar).

10. In claim 1, Plasma-resistant glass having a melting point of 1,500℃ or higher and 1,900℃ or lower.

11. A component for use inside a chamber for a semiconductor manufacturing process, the component being made of the plasma-resistant glass of any one of claims 1 to 10.

12. In claim 11, The internal components are any one of a focus ring, an edge ring, a covering ring, a ring shower, an insulator, an EPD window, an electrode, a view port, an inner shutter, an electro static chuck, a heater, a chamber liner, a shower head, a CVD (Chemical Vapor Deposition) boat, a wall liner, a shield, a cold pad, a source head, an outer liner, a deposition shield, an upper liner, an exhaust plate, and a mask frame, for a chamber internal component for a semiconductor manufacturing process. A method for manufacturing plasma-resistant glass, comprising: a step of melting a composition comprising 13.80 wt% or more and 95 wt% or less of Si-based oxide, 1 wt% or more and 10 wt% or less of Al-based oxide, and 2 wt% or more and 15 wt% or less of Ca-based oxide; and a step of cooling the molten composition.

14. In claim 13, A method for manufacturing plasma-resistant glass, wherein the melting temperature of the step of melting the above composition is 1,500°C or more and 1,900°C or less.

15. A method comprising: a step of melting the plasma-resistant glass of any one of claims 1 to 10; a step of injecting the molten plasma-resistant glass into a mold; and a step of annealing the injected plasma-resistant glass. The melting temperature of the step of melting the above-mentioned plasma-resistant glass is 1,500°C or higher and 1,900°C or lower, A method for manufacturing a component for use inside a chamber for a semiconductor manufacturing process, wherein the temperature of the annealing step is 400°C or higher and 900°C or lower.

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