Method for forming gallium nitride film

Abstract

The present invention relates to a method for forming a gallium nitride film on a substrate in a chamber, the method comprising the steps of: injecting a gallium-containing source gas onto the substrate; and injecting a nitrogen-containing reactant gas onto the substrate.

Description

gallium nitride film formation method

[0001] The present invention relates to a gallium nitride film forming method for forming a gallium nitride film on a substrate.

[0002] In general, in order to manufacture semiconductor devices, display devices, solar cells, lighting devices, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. To this end, substrate processing processes such as a deposition process for depositing a thin film of a specific material on a substrate, a photo process for selectively exposing the thin film using a photosensitive material, and an etching process for forming a pattern by removing the thin film in the selectively exposed portion are performed. These processing processes may include a gallium nitride film forming process for forming a gallium nitride film on a substrate.

[0003] The conventional gallium nitride film formation process formed a gallium nitride film on a substrate by spraying a gallium-containing source gas and a nitrogen-containing reactant gas together. To form a gallium nitride film using chemical vapor deposition (CVD), conventional gallium nitride films required a process at high temperatures exceeding 800°C, leading to increased process and construction costs.

[0004] The present invention has been devised to solve the problems described above, and to provide a method for forming a gallium nitride film that can expand the range of process temperatures for forming a gallium nitride film.

[0005] In order to solve the above-described problem, the present invention may include the following configuration.

[0006] A method for forming a gallium nitride film according to the present invention is a method for forming a gallium nitride film on a substrate within a chamber, the method including the steps of: injecting a gallium-containing source gas onto the substrate; and injecting a nitrogen-containing reactant gas onto the substrate. The step of injecting the nitrogen-containing reactant gas may include injecting a dopant.

[0007] The method for forming a gallium nitride film according to the present invention may include a step of forming plasma on the substrate after the step of injecting the nitrogen-containing reactant gas.

[0008] A method for forming a gallium nitride film according to the present invention may include: forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas; forming plasma on the substrate after the step of injecting the nitrogen-containing reactant gas; and exhausting the inside of the chamber using a turbo pump. The step of exhausting using a turbo pump may be performed when at least one of the steps of injecting the gallium-containing source gas, forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas, injecting the nitrogen-containing reactant gas, and forming plasma on the substrate after the step of injecting the nitrogen-containing reactant gas is performed.

[0009] A method for forming a gallium nitride film according to the present invention may include a step of forming plasma on the substrate after the step of injecting the nitrogen-containing reactant gas; and a step of injecting a purge gas on the substrate after the step of injecting the nitrogen-containing reactant gas. The step of forming plasma on the substrate after the step of injecting the nitrogen-containing reactant gas may be performed in at least one section between the step of injecting the purge gas and the step of injecting the purge gas.

[0010] The method for forming a gallium nitride film according to the present invention may include a step of performing a first treatment by forming plasma on the substrate after the step of injecting the nitrogen-containing reactant gas; and a step of performing a second treatment by forming plasma on the substrate after the step of performing the first treatment.

[0011] A method for forming a gallium nitride film according to the present invention is a method for forming a gallium nitride film on a substrate in a chamber, the method including: injecting a gallium-containing source gas onto the substrate; injecting a nitrogen-containing reactant gas onto the substrate; and forming a plasma on the substrate. The step of forming a plasma on the substrate may include injecting a dopant.

[0012] In the method for forming a gallium nitride film according to the present invention, the dopant may include one or two or more of aluminum (Al), magnesium (Mg), phosphorus (P), and indium (In).

[0013] The method for forming a gallium nitride film according to the present invention can control the temperature of the substrate in the chamber to 400 degrees or less.

[0014] The method for forming a gallium nitride film according to the present invention may include a step of exhausting the interior of the chamber using a turbo pump. The step of exhausting using the turbo pump may be performed when at least one of the steps of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas is performed.

[0015] The method for forming a gallium nitride film according to the present invention may include a step of forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas.

[0016] In the method for forming a gallium nitride film according to the present invention, the step of injecting the nitrogen-containing reactant gas may form plasma and inject the nitrogen-containing reactant gas activated by the plasma.

[0017] A method for forming a gallium nitride film according to the present invention may include a step of forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas; and a step of injecting a purge gas on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas. The step of forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas may be performed in at least one section between the step of injecting the purge gas and the step of injecting the purge gas.

[0018] A method for forming a gallium nitride film according to the present invention may include a step of forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas; and a step of injecting a purge gas on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas. The step of forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas, and the step of injecting the purge gas may be performed simultaneously.

[0019] A method for forming a gallium nitride film according to the present invention may include: forming a plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas; and exhausting the interior of the chamber using a turbo pump. The step of forming the plasma on the substrate may be performed after the step of injecting the nitrogen-containing reactant gas. The step of exhausting using the turbo pump may be performed when at least one of the steps of injecting the gallium-containing source gas, forming a plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas, injecting the nitrogen-containing reactant gas, and forming a plasma on the substrate after the step of injecting the nitrogen-containing reactant gas is performed.

[0020] The method for forming a gallium nitride film according to the present invention may include a step of injecting a purge gas onto the substrate after the step of injecting the nitrogen-containing reactant gas. The step of forming a plasma onto the substrate may be performed in at least one section between the step of injecting the purge gas and the step of injecting the purge gas.

[0021] The method for forming a gallium nitride film according to the present invention may include a step of injecting a purge gas onto the substrate after the step of injecting the nitrogen-containing reactant gas. The step of forming a plasma onto the substrate and the step of injecting the purge gas may be performed simultaneously.

[0022] According to the present invention, the following effects can be achieved.

[0023] The present invention forms a dopant-doped gallium nitride film using an atomic layer deposition (ALD) method, thereby increasing the deposition rate of the dopant-doped gallium nitride film. Furthermore, the present invention allows the process to be performed at relatively low temperatures, thereby reducing process and construction costs. Furthermore, the present invention allows the process to be performed at high temperatures, thereby broadening the range of process temperatures for forming the gallium nitride film. Accordingly, the present invention can enhance its versatility in forming gallium nitride films with various specifications.

[0024] Figure 1 is a schematic diagram showing an example of a substrate processing device in which a method for forming a gallium nitride film according to the present invention is performed.

[0025] Figures 2 to 5 are schematic side cross-sectional views of an injection unit that injects gas in an example of a substrate processing device in which a method for forming a gallium nitride film according to the present invention is performed.

[0026] Figures 6 to 8 are schematic flowcharts of a method for forming a gallium nitride film according to the present invention.

[0027] Hereinafter, embodiments of a method for forming a gallium nitride film according to the present invention will be described in detail with reference to the attached drawings. When describing embodiments of the present invention, it is described that a structure is formed "on" or "below" another structure, such description should be interpreted to include not only cases where the structures are in contact with each other, but also cases where a third structure is interposed between the structures.

[0028] Referring to FIGS. 1 to 4, a method for forming a gallium nitride film according to the present invention is for forming a gallium nitride film on a substrate (100). The substrate (100) may be a silicon substrate, a glass substrate, a metal substrate, or the like. The gallium nitride film may be provided in a semiconductor device, a display device, a solar cell, a lighting device, or the like. For example, the gallium nitride film may be implemented as a gate electrode of a transistor.

[0029] The method for forming a gallium nitride film according to the present invention can be performed by a substrate processing device (1). Before explaining an embodiment of the method for forming a gallium nitride film according to the present invention, an example of the substrate processing device (1) will be examined as follows.

[0030] Referring to FIGS. 1 to 5, the substrate processing device (1) may include a chamber (2), a substrate support unit (3), and an injection unit (4).

[0031] The chamber (2) may provide a processing space (200). In the processing space (200), a processing process for forming the gallium nitride film may be performed. The processing space (200) may be arranged inside the chamber (2). An exhaust port (21) for exhausting gas from the processing space (200) may be coupled to the chamber (2). A turbo pump (22) providing suction power may be connected to the exhaust port (21). The turbo pump (22) may suck in gas from the processing space (200) through the exhaust port (21) and exhaust it. The substrate support unit (3) and the injection unit (4) may be arranged inside the chamber (2).

[0032] A heating unit (23) may be coupled to the chamber (2). The heating unit (23) can control the temperature of the substrate (100) within the chamber (2). The heating unit (23) can control the temperature of the substrate (100) through the substrate support unit (3) by heating the substrate support unit (3). The heating unit (23) can control the temperature of the substrate (100) through the processing space (200) by heating the processing space (200). The heating unit (23) can also control the temperature of the substrate (100) by directly heating the substrate (100). The heating unit (23) can control the temperature of the substrate (100) by circulating a heating fluid such as water, emitting light for heating, generating heat by electricity, or the like.

[0033] The substrate support unit (3) above can support the substrate (100). The substrate support unit (3) can support one substrate (100) as shown in FIG. 1. In this case, the substrate processing device (1) can perform the processing process on one substrate (100). The substrate processing device (1) can also perform the processing process on a plurality of substrates (100) as shown by a dotted line in FIG. 3. In this case, the substrate support unit (3) can support a plurality of substrates (100). Although FIG. 3 illustrates that the substrate processing device (1) performs the processing process on six substrates (100), the present invention is not limited thereto, and the substrate processing device (1) can perform the processing process on two or more, five or fewer, or seven or more substrates (100). The above substrates (100) can be arranged spaced apart from each other with the rotation axis (3a) of the substrate support member (3) as the center. The substrate support member (3) can be coupled to the chamber (2). The substrate support member (3) can be arranged inside the chamber (2).

[0034] The above-described injection unit (4) can inject gas toward the substrate support unit (3). Accordingly, the injection unit (4) can inject gas onto the substrate (100) supported by the substrate support unit (3). The injection unit (4) can be disposed inside the chamber (2). The injection unit (4) can be disposed opposite the substrate support unit (3). The injection unit (4) can be disposed above the substrate support unit (3). The processing space (200) can be disposed between the injection unit (4) and the substrate support unit (3). The injection unit (4) can be coupled to a lid (not shown). The lid can be coupled to the chamber (2) so as to cover the upper portion of the chamber (2). The injection unit (4) can inject gas through a plurality of gas holes (not shown). The injection unit (4) can be connected to a supply unit (not shown). In this case, the injection unit (4) can inject the gas supplied from the supply unit toward the substrate support unit (3).

[0035] The above-described injection unit (4) can inject gas through both the first area (FA) and the second area (SA) arranged inside the first area (FA). That is, the injection unit (4) can be implemented as a full-surface injection structure. In this case, the injection unit (4) can be implemented so that the gas holes are arranged in both the first area (FA) and the second area (SA). The injection unit (4) can also inject gas only through the first area (FA) excluding the second area (SA). The second area (SA) can include a rotation axis (3a) of the substrate support unit (3). The first area (FA) can be arranged to surround the outer side of the second area (SA). When the second area (SA) is formed in a circular shape, the first area (FA) can be formed in a circular ring shape with an empty inner side. When the second area (SA) is formed in a square shape, the first area (FA) can be formed in a square ring shape with an empty inner side.

[0036] The above injection unit (4) may include a first gas path (4a) and a second gas path (4b).

[0037] The first gas path (4a) is for injecting the first gas. One end of the first gas path (4a) may be connected to the supply unit via a pipe, hose, gas block, or the like. The other end of the first gas path (4a) may be connected to the processing space (200). Accordingly, the first gas supplied from the supply unit may flow along the first gas path (4a) and then be injected into the processing space (200) through the first gas path (4a). The first gas path (4a) may function as a path for the first gas to flow and also as an injection port for injecting the first gas into the processing space (200).

[0038] The second gas path (4b) is for injecting the second gas. The second gas and the first gas may be different gases. For example, when the first gas is a source gas, the second gas may be a reactant gas. The second gas path (4b) may have one end connected to the supply unit through a pipe, a hose, a gas block, or the like. The other end of the second gas path (4b) may be connected to the processing space (200). Accordingly, the second gas supplied from the supply unit may flow along the second gas path (4b) and then be injected into the processing space (200) through the second gas path (4b). The above second gas path (4b) can function as a path for the second gas to flow and also as an injection port for injecting the second gas into the processing space (200).

[0039] The second gas path (4b) and the first gas path (4a) may be arranged to be spatially separated from each other. Accordingly, the second gas supplied from the supply unit to the second gas path (4b) may be injected into the processing space (200) without passing through the first gas path (4a). The first gas supplied from the supply unit to the first gas path (4a) may be injected into the processing space (200) without passing through the second gas path (4b). The second gas path (4b) and the first gas path (4a) may inject gases toward different parts of the processing space (200).

[0040] For example, as shown in FIG. 3, the injection unit (4) may include a first plate (41) and a second plate (42).

[0041] The first plate (41) is disposed on the upper side of the second plate (42). The first plate (41) and the second plate (42) may be disposed spaced apart from each other. A plurality of first gas holes (411) may be formed in the first plate (41). Each of the first gas holes (411) may function as a passage for the first gas to flow. The first gas holes (411) may belong to the first gas path (4a). A plurality of second gas holes (412) may be formed in the first plate (41). Each of the second gas holes (412) may function as a passage for the second gas to flow. The second gas holes (412) may belong to the second gas path (4b). A plurality of protruding members (413) may be combined with the first plate (41). The protruding members (413) may protrude from the lower surface of the first plate (41) toward the second plate (42). Each of the first gas holes (411) may be formed by penetrating the first plate (41) and the protruding members (413).

[0042] A plurality of openings (421) may be formed in the second plate (42). The openings (421) may be formed by penetrating the second plate (42). The openings (421) may be arranged at positions corresponding to the respective protruding members (413). Accordingly, as illustrated in FIG. 3, the protruding members (413) may be formed to have a length such that they are inserted into each of the openings (421). Although not illustrated, the protruding members (413) may also be formed to have a length such that they are arranged above each of the openings (421). The protruding members (413) may also be formed to have a length such that they protrude downward from the second plate (42). The second gas holes (412) may be arranged to inject gas toward the upper surface of the second plate (42). Although not shown, the lower surface of the first plate (41) may be formed flat without the protruding member (413).

[0043] For example, as illustrated in FIG. 4, a plurality of first openings (422) and a plurality of second openings (423) may be formed in the second plate (42).

[0044] The first openings (422) may be formed by penetrating the second plate (42). The second openings (423) may be formed by penetrating the second plate (42). The second plate (42) and the first plate (41) may be spaced apart from each other. The lower surface of the first plate (41) facing the second plate (42) may be formed flat without the protruding member (413, shown in FIG. 3). The first gas and the second gas may be supplied to the space between the first plate (41) and the second plate (42) through the first gas holes (411) and the second gas holes (412), and then sprayed into the processing space (200) through the first openings (422) and the second openings (423).

[0045] Meanwhile, the first openings (422) may be arranged vertically below each of the first gas holes (411). In this case, the first openings (422) and the first gas holes (411) may be arranged on the same vertical line. Although not shown, the first openings (422) and the first gas holes (411) may be arranged at staggered positions. In this case, the first openings (422) and the first gas holes (411) may be arranged at positions where they do not overlap each other, or may be arranged at positions where they only partially overlap each other.

[0046] Meanwhile, the second openings (423) may be arranged vertically below each of the second gas holes (412). In this case, the second openings (423) and the second gas holes (412) may be arranged on the same vertical line. Although not shown, the second openings (423) and the second gas holes (412) may be arranged at staggered positions. In this case, the second openings (423) and the second gas holes (412) may be arranged at positions where they do not overlap each other, or may be arranged at positions where they only partially overlap each other.

[0047] Meanwhile, the injection unit (4) can form plasma using the second plate (42) and the first plate (41). In this case, plasma power, such as RF power, may be applied to the first plate (41), and the second plate (42) may be grounded. The first plate (41) may be grounded, and plasma power may be applied to the second plate (42). The injection unit (4) can activate gas using plasma and then inject the activated gas into the processing space (200). The injection unit (4) can also form plasma on a substrate (100) placed in the processing space (200).

[0048] For example, as shown in FIG. 5, the protruding members (413) may be arranged to contact the upper surface of the second plate (42).

[0049] Each of the first gas holes (411) may be connected. The first gas may be injected into the processing space (200) through the first gas holes (411) and the first openings (422). The first gas holes (411) and the first openings (422) may belong to the first gas path (4a).

[0050] The second openings (423) may be connected to a space disposed between the first plate (41) and the second plate (42). The second gas may be injected into the processing space (200) through the second gas holes (412), the space disposed between the first plate (41) and the second plate (42), and the second openings (423). The second gas holes (412), the space disposed between the first plate (41) and the second plate (42), and the second openings (423) may belong to the second gas path (4b). The second openings (423) may be disposed vertically below each of the second gas holes (412). In this case, the second opening (423) and the second gas hole (412) may be arranged on the same vertical line. Although not shown, the second opening (423) and the second gas hole (412) may also be arranged at staggered positions. In this case, the second opening (423) and the second gas hole (412) may be arranged at positions where they do not overlap each other, or may be arranged at positions where they only partially overlap each other.

[0051] Although not shown, the protruding members (413) may be arranged so that some of them are inserted into the upper surface of the second plate (42). In this case, the lower surfaces of the protruding members (413) may be arranged inside the second plate (42). The lower surfaces of the protruding members (413) may be arranged on the same line as the lower surface of the second plate (42). In this case, the first opening (422) is not formed in the second plate (42), and the first gas holes (411) formed in the protruding members (413) can directly inject the first gas into the processing space (200).

[0052] Meanwhile, a remote plasma (not shown) may be connected to the injection unit (4). Using the remote plasma, the injection unit (4) can activate gas and then inject the activated gas into the processing space (200). Using the remote plasma, the injection unit (4) can also form plasma on a substrate (100) placed in the processing space (200).

[0053] Through a substrate processing device (1) like this, a method for forming a gallium nitride film according to the present invention can be performed.

[0054] Referring to FIGS. 1 to 8, the method for forming a gallium nitride film according to the present invention is for forming the gallium nitride film on the substrate (100). The substrate (100) may be placed within the chamber (2). The method for forming a gallium nitride film according to the present invention may include the following steps.

[0055] First, a gallium-containing source gas is injected (S10). This step (S10) can be performed by injecting a gallium-containing source gas containing gallium (Ga) onto the substrate (100). The step (S10) of injecting the gallium-containing source gas can be performed by the injection unit (4) injecting the gallium-containing source gas into the processing space (200). In this case, the injection unit (4) can inject the gallium-containing source gas through the first gas path (4a). Through the step (S10) of injecting the gallium-containing source gas, an adsorption process in which gallium contained in the gallium-containing source gas is adsorbed can be performed.

[0056] Next, a nitrogen-containing reactant gas is injected (S20). This step (S20) can be performed by injecting a nitrogen-containing reactant gas containing nitrogen (N) onto the substrate (100). The step (S20) of injecting the nitrogen-containing reactant gas can be performed by the injection unit (4) injecting the nitrogen-containing reactant gas into the processing space (200). In this case, the injection unit (4) can inject the nitrogen-containing reactant gas through the second gas path (4b). Through the step (S20) of injecting the nitrogen-containing reactant gas, a deposition process can be performed in which the gallium adsorbed on the substrate (100) reacts with the nitrogen contained in the nitrogen-containing reactant gas, thereby depositing the gallium nitride film.

[0057] The step (S20) of injecting the nitrogen-containing reactant gas may inject a dopant. In this case, the step (S20) of injecting the nitrogen-containing reactant gas may be performed by injecting the dopant together with the nitrogen-containing reactant gas. Accordingly, the method for forming a gallium nitride film according to the present invention may form a gallium nitride film doped with a dopant on the substrate (100).

[0058] As described above, the method for forming a gallium nitride film according to the present invention can form a dopant-doped gallium nitride film by atomic layer deposition (ALD). Accordingly, compared to forming a gallium nitride film by chemical vapor deposition (CVD) in the prior art, the method for forming a gallium nitride film according to the present invention can increase the deposition rate of the dopant-doped gallium nitride film, and since the process can be performed at a relatively low temperature, the process cost and construction cost can be reduced. In addition, since the method for forming a gallium nitride film according to the present invention can also perform the process at a high temperature, the range of process temperatures for forming the gallium nitride film can be expanded. Therefore, the present invention can improve the versatility that can be applied to forming gallium nitride films having various specifications.

[0059] The method for forming a gallium nitride film according to the present invention may include a step (S30) of forming plasma on a substrate.

[0060] The step (S30) of forming plasma on the substrate can be performed by forming plasma on the substrate (100). The step (S30) of forming plasma on the substrate can perform treatment on the substrate (100) with the plasma formed on the substrate (100). Hereinafter, the step (S30) of forming plasma on the substrate will be described as the step (S30) of performing the first treatment.

[0061] The step (S30) of performing the first treatment may be performed by the injection unit (4) forming plasma in the processing space (200). When injecting gas into the processing space (200) to form plasma, the injection unit (4) may inject the gas through at least one of the first gas path (4a) and the second gas path (4b). The step (S30) of performing the first treatment may be performed after the step (S20) of injecting the nitrogen-containing reactant gas.

[0062] In this way, the method for forming a gallium nitride film according to the present invention is implemented by forming a gallium nitride film doped with a dopant using atomic layer deposition (ALD) and then performing plasma treatment. Accordingly, the method for forming a gallium nitride film according to the present invention can achieve the following operational effects.

[0063] First, in the case of an embodiment in which treatment with plasma is not performed after forming a dopant-doped gallium nitride film, the content of the dopant in the gallium nitride film may be reduced as bonding occurs between the dopant and the component contained in the nitrogen-containing reactant gas.

[0064] Next, in the embodiment of performing treatment with plasma through the step (S30) of performing the first treatment after forming a gallium nitride film doped with a dopant, the bonding that occurs between the component contained in the nitrogen-containing reactant gas and the dopant can be released. Accordingly, the method for forming a gallium nitride film according to the present invention can further increase the content of the dopant in the gallium nitride film, and thus can contribute to further improving the performance of a product manufactured using the gallium nitride film.

[0065] For example, when the nitrogen-containing reactant gas is ammonia (NH3) and the dopant is magnesium (Mg), the content of magnesium in the gallium nitride film may decrease as a bond is formed between hydrogen (H) and magnesium contained in the nitrogen-containing reactant gas. However, the method for forming a gallium nitride film according to the present invention can release the bond formed between hydrogen and magnesium through the step (S30) of performing the first treatment. Accordingly, the method for forming a gallium nitride film according to the present invention can further increase the content of magnesium in the gallium nitride film, and thus can contribute to further improving the efficiency of products such as LEDs (Light Emitting Diodes). In this case, the method for forming a gallium nitride film according to the present invention can form a P-Type gallium nitride film with further improved quality.

[0066] Next, the method for forming a gallium nitride film according to the present invention can remove impurities such as hydrogen, carbon (C), etc. from the gallium nitride film in the process of increasing the content of a dopant such as magnesium in the gallium nitride film through the step (S30) of performing the first treatment. Therefore, the method for forming a gallium nitride film according to the present invention can further improve the film quality of the gallium nitride film.

[0067] Next, since the method for forming a gallium nitride film according to the present invention forms a dopant-doped gallium nitride film by atomic layer deposition (ALD), the deposition rate of the dopant-doped gallium nitride film can be increased compared to forming a gallium nitride film by chemical vapor deposition (CVD) in the prior art. In addition, the method for forming a gallium nitride film according to the present invention can release the bonds formed between the dopant and the component included in the nitrogen-containing reactant gas through the step (S30) of performing the first treatment, so that the content of the dopant doped in the gallium nitride film can be further increased without a separate heat treatment process. Accordingly, the method for forming a gallium nitride film according to the present invention can perform the process at a relatively low temperature compared to the prior art, thereby reducing the process cost and construction cost. For example, the method for forming a gallium nitride film according to the present invention can form a dopant-doped gallium nitride film at a process temperature of 800 degrees (℃) or less. In this case, the temperature of the substrate (100) within the chamber (2) can be controlled to a temperature of 400 degrees or less by the heating unit (23). In addition, since the method for forming a gallium nitride film according to the present invention can also perform the process at a high temperature, the range of process temperatures for forming a gallium nitride film can be expanded. Therefore, the method for forming a gallium nitride film according to the present invention can improve the versatility of being applicable to forming gallium nitride films having various specifications.

[0068] Meanwhile, the method for forming a gallium nitride film according to a modified embodiment of the present invention may be implemented such that the step (S30) of performing the first treatment sprays a dopant. In this case, the step (S30) of performing the first treatment may be performed by forming plasma on the substrate (100) and spraying a dopant at the same time. Accordingly, the method for forming a gallium nitride film according to the present invention can form a gallium nitride film doped with a dopant on the substrate (100). Therefore, the method for forming a gallium nitride film according to a modified embodiment of the present invention can achieve the following effects.

[0069] A method for forming a gallium nitride film according to a modified embodiment of the present invention can increase the content of a dopant in the gallium nitride film, and thus can contribute to improving the performance of a product manufactured using the gallium nitride film.

[0070] A method for forming a gallium nitride film according to a modified embodiment of the present invention can remove impurities such as hydrogen, carbon (C), etc. from the gallium nitride film in the process of increasing the content of a dopant such as magnesium, etc. in the gallium nitride film, thereby improving the film quality of the gallium nitride film.

[0071] A method for forming a gallium nitride film according to a modified embodiment of the present invention can increase the deposition rate of a gallium nitride film doped with a dopant, and can further increase the content of the dopant doped in the gallium nitride film without a separate heat treatment process, thereby enabling the process to be performed at a relatively low temperature, thereby reducing the process cost and construction cost.

[0072] The method for forming a gallium nitride film according to a modified embodiment of the present invention can also perform the process at high temperatures, thereby expanding the range of process temperatures for forming a gallium nitride film. Accordingly, the method for forming a gallium nitride film according to the present invention can enhance its versatility in being applicable to forming gallium nitride films having various specifications.

[0073] Meanwhile, the method for forming a gallium nitride film according to a modified embodiment of the present invention may be implemented such that a dopant is injected in the step (S30) of performing the first treatment, and the nitrogen-containing reactant gas is injected without dopant injection in the step (S20) of injecting the nitrogen-containing reactant gas. Except for these differences, the method for forming a gallium nitride film according to a modified embodiment of the present invention and the method for forming a gallium nitride film according to the present invention may be implemented to be substantially identical to each other. Therefore, the method for forming a gallium nitride film according to the present invention will be described in detail below with reference to the attached drawings. From this, it will be apparent to those skilled in the art that the present invention is applied to the method for forming a gallium nitride film according to a modified embodiment of the present invention.

[0074] Referring to FIGS. 1 to 8, the step (S20) of injecting the nitrogen-containing reactant gas may be performed by injecting a dopant including one or more of aluminum (Al), magnesium (Mg), phosphorus (P), and indium (In). Thereafter, through the step (S30) of performing the first treatment, the method for forming a gallium nitride film according to the present invention may increase the content of one or more of aluminum, magnesium, phosphorus, and indium doped in the gallium nitride film.

[0075] The step (S20) of injecting the nitrogen-containing reactant gas may form plasma to inject the nitrogen-containing reactant gas activated by the plasma. Accordingly, the method for forming a gallium nitride film according to the present invention can further increase the deposition rate of the dopant-doped gallium nitride film and further improve the film quality of the dopant-doped gallium nitride film. When the step (S20) of injecting the nitrogen-containing reactant gas forms plasma to inject the nitrogen-containing reactant gas activated by the plasma, the method for forming a gallium nitride film according to the present invention can form the dopant-doped gallium nitride film by a plasma-enhanced atomic layer deposition (PEALD) method.

[0076] Referring to FIGS. 1 to 8, the method for forming a gallium nitride film according to the present invention may include a step (S100) of exhausting using a turbo pump.

[0077] The step (S100) of exhausting using the turbo pump can be performed by exhausting the interior of the chamber (2) using the turbo pump (22). The turbo pump (22) can exhaust the interior of the chamber (2) by sucking gas from the processing space (200) through the exhaust port (21).

[0078] The step of exhausting using the turbo pump (S100) may be performed when at least one of the step of injecting the gallium-containing source gas (S10) and the step of injecting the nitrogen-containing reactant gas (S20) is performed. When the step of exhausting using the turbo pump (S100) is performed when the step of injecting the gallium-containing source gas (S10) is performed, the method for forming a gallium nitride film according to the present invention can reduce impurities, etc. included in the gallium adsorbed on the substrate (100), by exhausting particles, etc. mixed in the gallium-containing source gas injected onto the substrate (100) or existing in the processing space (200), from the inside of the chamber (2). When the step of injecting the nitrogen-containing reactant gas (S20) is performed and the step of exhausting using the turbo pump (S100) is performed, the method for forming a gallium nitride film according to the present invention can reduce impurities, etc. included in the gallium nitride film deposited on the substrate (100) by exhausting particles, etc. mixed in the nitrogen-containing reactant gas injected onto the substrate (100) or existing in the processing space (200) from the inside of the chamber (2). Therefore, the method for forming a gallium nitride film according to the present invention can further improve the film quality of the gallium nitride film.

[0079] Referring to FIGS. 1 to 8, the method for forming a gallium nitride film according to the present invention may include a step (S200) of controlling the temperature of the substrate.

[0080] The step (S200) of controlling the temperature of the substrate can be performed by controlling the temperature of the substrate (100) within the chamber (2). The step (S200) of controlling the temperature of the substrate can be performed by controlling the temperature of the substrate (100) within the chamber (2) to 400 degrees or less. In this case, since the method for forming a gallium nitride film according to the present invention forms a gallium nitride film doped with a dopant by an atomic layer deposition (ALD) method, it can contribute to reducing the process cost and construction cost by forming the gallium nitride film on the substrate (100) controlled to a temperature of 400 degrees or less. The step (S200) of controlling the temperature of the substrate can be performed by controlling the temperature of the substrate (100) to 200 degrees or more and 400 degrees or less. The step (S200) of controlling the temperature of the substrate can be performed by the heating unit (23). The step (S200) of controlling the temperature of the substrate can be continuously performed until a gallium nitride film of a desired thickness is formed on the substrate (100).

[0081] Referring to FIGS. 1 to 8, the method for forming a gallium nitride film according to the present invention may include a step (S11) of forming plasma.

[0082] The step (S11) of forming plasma on the substrate may be performed between the step (S10) of injecting the gallium-containing source gas and the step (S20) of injecting the nitrogen-containing reactant gas. The step (S11) of forming plasma on the substrate may be performed by forming plasma on the substrate (100). Accordingly, the step (S11) of forming plasma on the substrate may remove impurities, etc. from the gallium adsorbed on the substrate (100) through the step (S10) of injecting the gallium-containing source gas using plasma. Therefore, the method for forming a gallium nitride film according to the present invention may further improve the film quality of the gallium nitride film doped with a dopant. The step (S11) of forming plasma on the substrate may be performed by the injector (4) forming plasma in the processing space (200). When injecting gas into the processing space (200) to form the plasma, the injection unit (4) can inject gas through at least one of the first gas path (4a) and the second gas path (4b).

[0083] Referring to FIGS. 1 to 8, the method for forming a gallium nitride film according to the present invention may include a step (S12) of injecting a purge gas after a step (S10) of injecting the gallium-containing source gas.

[0084] The step (S12) of injecting the purge gas may be performed between the step (S10) of injecting the gallium-containing source gas and the step (S20) of injecting the nitrogen-containing reactant gas. The step (S12) of injecting the purge gas may be performed by injecting the purge gas onto the substrate (100). Through this, a purge process of purging gases, etc., that were not used in the adsorption process, from the processing space (200) may be performed. The step (S12) of injecting the purge gas may be performed by the injector (4) injecting the purge gas into the processing space (200) through at least one of the first gas path (4a) and the second gas path (4b).

[0085] If the step (S12) of injecting the purge gas is provided, the step (S11) of forming plasma on the substrate may be performed before the step (S12) of injecting the purge gas. Accordingly, the step (S11) of forming plasma on the substrate may be performed between the step (S10) of injecting the gallium-containing source gas and the step (S12) of injecting the purge gas.

[0086] If the step (S12) of injecting the purge gas is provided, the step (S11) of forming plasma on the substrate may be performed after the step (S12) of injecting the purge gas. Accordingly, the step (S11) of forming plasma on the substrate may be performed between the step (S12) of injecting the purge gas and the step (S20) of injecting the nitrogen-containing reactant gas.

[0087] When the step (S12) of injecting the purge gas is provided, the step (S11) of forming plasma on the substrate may be performed both before the step (S12) of injecting the purge gas and after the step (S12) of injecting the purge gas. In this case, the step (S11) of forming plasma on the substrate before the step (S12) of injecting the purge gas may be implemented as a step of forming a first plasma on the substrate. The step (S11) of forming plasma on the substrate after the step (S12) of injecting the purge gas may be implemented as a step of forming a second plasma on the substrate. Accordingly, the method for forming a gallium nitride film according to the present invention may be implemented so that the step of forming the first plasma, the step (S12) of injecting the purge gas, and the step of forming the second plasma are sequentially performed between the step (S10) of injecting the gallium-containing source gas and the step (S20) of injecting the nitrogen-containing reactant gas.

[0088] In this way, when the step (S12) of injecting the purge gas is provided, the step (S11) of forming plasma on the substrate can be performed in at least one section between before the step (S12) of injecting the purge gas and after the step (S12) of injecting the purge gas.

[0089] If the step (S12) of injecting the purge gas is provided, the step (S11) of forming plasma on the substrate and the step (S12) of injecting the purge gas may be performed simultaneously. Accordingly, the method for forming a gallium nitride film according to the present invention can simultaneously perform the removal of impurities using plasma and the purging of gases not used in the adsorption process, thereby shortening the overall process time.

[0090] Referring to FIGS. 1 to 8, the method for forming a gallium nitride film according to the present invention may include a step (S40) of injecting a purge gas after the step (S20) of injecting the nitrogen-containing reactant gas.

[0091] The step (S40) of injecting the purge gas may be performed by injecting the purge gas onto the substrate (100) after the step (S20) of injecting the nitrogen-containing reactant gas. Through this, a purge process of purging gases, etc., that were not used in the deposition process from the processing space (200) may be performed. The step (S40) of injecting the purge gas may be performed by the injection unit (4) injecting the purge gas into the processing space (200) through at least one of the first gas path (4a) and the second gas path (4b).

[0092] If the step (S40) of injecting the purge gas is provided, the step (S30) of performing the first treatment may be performed before the step (S40) of injecting the purge gas. Accordingly, the step (S30) of performing the first treatment may be performed between the step (S20) of injecting the nitrogen-containing reactant gas and the step (S40) of injecting the purge gas.

[0093] If the step (S40) of injecting the purge gas is provided, the step (S30) of performing the first treatment may be performed after the step (S40) of injecting the purge gas. The step (S30) of performing the first treatment may be performed both before the step (S40) of injecting the purge gas and after the step (S40) of injecting the purge gas.

[0094] In this way, when the step (S40) of injecting the purge gas is provided, the step (S30) of performing the first treatment can be performed in at least one section between before the step (S40) of injecting the purge gas and after the step (S40) of injecting the purge gas.

[0095] If the step (S40) of injecting the purge gas is provided, the step (S30) of performing the first treatment and the step (S40) of injecting the purge gas may be performed simultaneously. Accordingly, the method for forming a gallium nitride film according to the present invention can perform an increase in the dopant content through the first treatment and a purge of gases, etc., that were not used in the deposition process, simultaneously, thereby shortening the overall process time.

[0096] Meanwhile, the method for forming a gallium nitride film according to the present invention may include both the step of injecting the purge gas (S12) after the step of injecting the gallium-containing source gas (S10), and the step of injecting the purge gas (S40) after the step of injecting the nitrogen-containing reactant gas (S20). In this case, the step of injecting the purge gas (S12) after the step of injecting the gallium-containing source gas (S10) may be implemented as a step of injecting a first purge gas onto the substrate. The step of injecting the purge gas (S40) after the step of injecting the nitrogen-containing reactant gas (S20) may be implemented as a step of injecting a second purge gas onto the substrate. Accordingly, the method for forming a gallium nitride film according to the present invention may sequentially perform the steps of injecting the gallium-containing source gas (S10), the step of injecting the first purge gas, the step of injecting the nitrogen-containing reactant gas (S20), and the step of injecting the second purge gas. In this case, the step (S30) of performing the first treatment may be performed in at least one section between the step of injecting the second purge gas and the step of injecting the second purge gas. The step (S30) of performing the first treatment and the step of injecting the second purge gas may be performed simultaneously.

[0097] Referring to FIGS. 1 to 8, the method for forming a gallium nitride film according to the present invention may include a step (S50) of forming plasma on the substrate.

[0098] The step (S50) of forming plasma on the substrate can be performed by forming plasma on the substrate (100). The step (S50) of forming plasma on the substrate can perform treatment on the substrate (100) with the plasma formed on the substrate (100). Hereinafter, the step (S50) of forming plasma on the substrate will be described as a step (S50) of performing a second treatment.

[0099] The step (S50) of performing the second treatment may be performed by the injection unit (4) forming plasma in the processing space (200). When injecting gas into the processing space (200) to form plasma, the injection unit (4) may inject gas through at least one of the first gas path (4a) and the second gas path (4b).

[0100] The step (S50) of performing the second treatment may be performed after the step (S30) of performing the first treatment. Accordingly, the method for forming a gallium nitride film according to the present invention can further improve the film quality of the dopant-doped gallium nitride film by removing impurities such as hydrogen and carbon from the dopant-doped gallium nitride film through the step (S50) of performing the second treatment after increasing the dopant content in the gallium nitride film through the step (S30) of performing the first treatment. In this case, the step (S50) of performing the second treatment may also increase the bonding strength between nitrogen and gallium in the dopant-doped gallium nitride film by crystallizing the dopant-doped gallium nitride film. Meanwhile, if the step (S40) of injecting the purge gas is provided, the step (S50) of performing the second treatment may be performed after the step (S50) of injecting the purge gas.

[0101] The step of performing the second treatment (S50) and the step of performing the first treatment (S40) can form plasma using different gases. Accordingly, the method for forming a gallium nitride film according to the present invention can form a high-quality gallium nitride film with an increased dopant content through plasma formed using different gases. For example, the step of performing the first treatment (S40) can form plasma using argon (Ar). The step of performing the second treatment (S50) can form plasma using hydrogen.

[0102] Meanwhile, in the case where the step of injecting the gallium-containing source gas (S10), the step of forming plasma on the substrate (S11), the step of injecting the nitrogen-containing reactant gas (S20), and the step of performing the first treatment (S30) are provided, the step of exhausting using the turbo pump (S100) may be performed when at least one step of the step of injecting the gallium-containing source gas (S10), the step of forming plasma on the substrate (S11), the step of injecting the nitrogen-containing reactant gas (S20), and the step of performing the first treatment (S30) is performed. Therefore, the method for forming a gallium nitride film according to the present invention can further improve the film quality of the gallium nitride film by exhausting particles and the like from the inside of the chamber (2) through the exhaust of the turbo pump (22) when at least one step of the steps (S10, S11, S20, S30) is performed.

[0103] The present invention described above is not limited to the above-described embodiments and the attached drawings, and it will be apparent to a person skilled in the art to which the present invention pertains that various substitutions, modifications, and changes are possible within a scope that does not depart from the technical spirit of the present invention.

Claims

1. A method for forming a gallium nitride film on a substrate within a chamber, A step of spraying a gallium-containing source gas onto the substrate; and Comprising a step of spraying a nitrogen-containing reactant gas onto the above substrate, A method for forming a gallium nitride film, characterized in that the step of injecting the nitrogen-containing reactant gas comprises injecting a dopant.

2. In paragraph 1, A method for forming a gallium nitride film, characterized in that it comprises a step of forming plasma on the substrate after the step of injecting the nitrogen-containing reactant gas.

3. In paragraph 1, A step of forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas; A step of forming plasma on the substrate after the step of injecting the nitrogen-containing reactant gas; and Including a step of exhausting the interior of the chamber using a turbo pump, A method for forming a gallium nitride film, characterized in that the step of exhausting using the turbo pump is performed when at least one of the steps of injecting the gallium-containing source gas, the step of forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas, the step of injecting the nitrogen-containing reactant gas, and the step of forming plasma on the substrate after the step of injecting the nitrogen-containing reactant gas is performed.

4. In paragraph 1, A step of forming plasma on the substrate after the step of injecting the nitrogen-containing reactant gas; and A step of injecting a purge gas onto the substrate after the step of injecting the nitrogen-containing reactant gas is included. A method for forming a gallium nitride film, characterized in that the step of forming plasma on the substrate after the step of injecting the nitrogen-containing reactant gas is performed in at least one section between the step of injecting the purge gas and the step of injecting the purge gas.

5. In paragraph 1, A step of performing a first treatment by forming plasma on the substrate after the step of injecting the nitrogen-containing reactant gas; and A method for forming a gallium nitride film, characterized in that it comprises a step of performing a second treatment by forming plasma on the substrate after the step of performing the first treatment.

6. A method for forming a gallium nitride film on a substrate within a chamber, A step of spraying a gallium-containing source gas onto the above substrate; A step of spraying a nitrogen-containing reactant gas onto the substrate; and Comprising a step of forming plasma on the substrate, A method for forming a gallium nitride film, characterized in that the step of forming plasma on the substrate comprises spraying a dopant.

7. In paragraph 1 or paragraph 6, A method for forming a gallium nitride film, characterized in that the dopant comprises one or more of aluminum (Al), magnesium (Mg), phosphorus (P), and indium (In).

8. In paragraph 1 or paragraph 6, A method for forming a gallium nitride film, characterized by including a step of controlling the temperature of the substrate within the chamber to 400 degrees or less.

9. In paragraph 1 or paragraph 6, Including a step of exhausting the interior of the chamber using a turbo pump, A method for forming a gallium nitride film, characterized in that the step of exhausting using the turbo pump is performed when at least one of the steps of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas is performed.

10. In paragraph 1 or paragraph 6, A method for forming a gallium nitride film, characterized by comprising a step of forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas.

11. In paragraph 1 or paragraph 6, A method for forming a gallium nitride film, characterized in that the step of injecting the nitrogen-containing reactant gas comprises forming plasma and injecting the nitrogen-containing reactant gas activated by the plasma.

12. In paragraph 1 or paragraph 6, A step of forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas; and A step of injecting a purge gas onto the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas, A method for forming a gallium nitride film, characterized in that the step of forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas is performed in at least one section between the step of injecting the purge gas and the step of injecting the purge gas.

13. In paragraph 1 or paragraph 6, A step of forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas; and A step of injecting a purge gas onto the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas, A method for forming a gallium nitride film, characterized in that the step of forming plasma on the substrate and the step of injecting the purge gas are performed simultaneously between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas.

14. In paragraph 6, A step of forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas; and Including a step of exhausting the interior of the chamber using a turbo pump, The step of forming plasma on the substrate is performed after the step of injecting the nitrogen-containing reactant gas. A method for forming a gallium nitride film, characterized in that the step of exhausting using the turbo pump is performed when at least one of the steps of injecting the gallium-containing source gas, the step of forming plasma on the substrate between the step of injecting the gallium-containing source gas and the step of injecting the nitrogen-containing reactant gas, the step of injecting the nitrogen-containing reactant gas, and the step of forming plasma on the substrate after the step of injecting the nitrogen-containing reactant gas is performed.

15. In paragraph 6, A step of injecting a purge gas onto the substrate after the step of injecting the nitrogen-containing reactant gas is included. A method for forming a gallium nitride film, characterized in that the step of forming plasma on the substrate is performed in at least one section between the step of injecting the purge gas and the step of injecting the purge gas.

16. In paragraph 6, A step of injecting a purge gas onto the substrate after the step of injecting the nitrogen-containing reactant gas is included. A method for forming a gallium nitride film, characterized in that the step of forming plasma on the substrate and the step of injecting the purge gas are performed simultaneously.

Images