Central gas intake and gas uniformizing structure and plasma etching machine

Abstract

Disclosed are a central gas intake and gas uniformizing structure and a plasma etching machine. The central gas intake and gas uniformizing structure comprises a central gas intake disc and a central gas uniformizing disc. The central gas inlet disc and the central gas uniformizing disc define a central gas injection passage and a plurality of edge gas injection passages, and the plurality of edge gas injection passages are arranged around the central gas injection passage. The central gas intake and gas uniformizing structure in the present invention comprises the central gas injection passage and the plurality of edge gas injection passages. Process gas for a central region can be introduced via the central gas injection passage, and process gas for an edge region can be introduced via the plurality of edge gas injection passages. Compared with the existing technology, the invention improves the uniformity of gas intake into a plasma reaction chamber, and improves the uniformity of the etching rate of the plasma etching machine.

Description

A central air intake uniform gas structure and plasma etching machine

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on December 26, 2023, with application number 2023118351694 and invention name “A central air intake uniform gas structure and plasma etcher”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present invention relates to the technical field of semiconductor processing, and in particular to a central air intake and uniform air structure and a plasma etcher. Background Art

[0003] Currently, the edge nozzles of plasma etchers are located too far from the wafer, which tends to affect only the wafer edge, resulting in a faster edge etching rate. The center nozzles of plasma etchers also tend to focus their jets too closely on the wafer center, which tends to cause a faster center etching rate. The combined effect of these two factors tends to slow down the etching rate near half the wafer diameter.

[0004] Therefore, how to improve the uniformity of the etching rate of the plasma etcher has become a technical problem that needs to be solved urgently by those skilled in the art.

[0005] Summary of the Invention

[0006] The present invention provides a central air intake uniform gas structure and a plasma etcher to improve the uniformity of the etching rate of the plasma etcher.

[0007] In order to achieve the above object, the present invention provides the following technical solutions:

[0008] In a first aspect, the present invention provides a central air intake and air uniformity structure, comprising a central air intake disk and a central air uniformity disk, wherein the central air intake disk and the central air uniformity disk form a central jet passage and multiple edge jet passages, and the multiple edge jet passages are arranged around the central jet passage.

[0009] Optionally, in the above central air intake and uniform air flow structure, the distances between the plurality of edge air jet passages and the central air jet passage are the same.

[0010] Optionally, in the above-mentioned central air intake and uniform air flow structure, the included angles of two adjacent edge air jet passages among the multiple edge air jet passages are the same.

[0011] Optionally, in the above-mentioned central air intake and uniform air flow structure, the central air intake disk includes a first air intake pipe, a first air distribution hole, a first air intake hole, a second air intake pipe, and a second air intake hole, wherein the first air intake pipe is used to communicate with the central air source; the first air distribution hole is connected to the first air intake pipe and the first air intake hole; the first air intake hole is located at the edge of the central air intake disk and extends in the axial direction; the second air intake pipe is used to communicate with the central air source and is connected to the second air intake hole; the second air intake hole is located in the middle of the central air intake disk and extends in the axial direction;

[0012] The central air distribution plate includes a first connecting hole, a second connecting hole, a first spray hole and a second spray hole, wherein the first connecting hole is connected to the first air inlet hole, and the second spray hole is connected to the second air inlet hole; the second connecting hole connects the first spray hole and the first connecting hole, and the second connecting hole extends in the radial direction;

[0013] A first air inlet hole, a first communicating hole, a second communicating hole and a first spray hole form an edge jet passage; the second air inlet hole and the second spray hole form a central jet passage.

[0014] Optionally, in the above central air intake and uniform air structure, the central uniform air disk includes an embedded section and an extended section, wherein the embedded section is embedded in the mounting hole of the dielectric window, and the extended section extends radially from the embedded section in a direction away from the axis.

[0015] Optionally, in the above central air intake and uniform air flow structure, the first connecting hole is arranged in the embedded section, and the second connecting hole and the first nozzle hole are arranged in the extended section.

[0016] Optionally, in the above central air intake and uniform air flow structure, the first spray hole extends in the axial direction; or the first spray hole is arranged obliquely relative to the axial direction.

[0017] Optionally, in the above-mentioned central air intake and uniform air flow structure, a spray chamfer is provided at the nozzle of the second spray hole.

[0018] Optionally, in the above-mentioned central air intake and uniform air flow structure, the first air intake pipe and the second air intake pipe are the same air intake pipe, or the first air intake pipe and the second air intake pipe are different air intake pipes.

[0019] In a second aspect, the present invention provides a plasma etcher, comprising a plasma reaction chamber, a dielectric window, a central gas source, and a central gas inlet and uniform gas structure as described above, wherein the dielectric window seals the top of the plasma reaction chamber, and the central gas inlet and uniform gas structure is arranged at the center of the dielectric window and is connected to the central gas source.

[0020] Optionally, in the above-mentioned plasma etcher, the plasma etcher further includes an upper cover, wherein the dielectric window is located at the opening of the upper cover, and the dielectric window is used to arrange a central air intake and uniform air structure; the upper cover is used to be installed at the opening of the plasma reaction chamber.

[0021] Optionally, in the above plasma etcher, the plasma etcher further includes an inner lining, which is wrapped around the opening of the upper cover.

[0022] Optionally, in the above-mentioned plasma etcher, the lining includes a first lining segment extending axially and a second lining segment extending radially, wherein the first lining segment corresponds to the mouth wall of the opening of the upper cover, and the second lining segment overlaps all or part of the end face of the upper cover close to the plasma reaction chamber.

[0023] Optionally, in the above plasma etcher, a guide section is provided at the portion where the second lining section and the first lining section are connected.

[0024] Optionally, in the above-mentioned plasma etcher, a portion of the end surface of the upper cover close to the plasma reaction chamber is provided with a step surface, and the second lining segment is installed on the step surface.

[0025] Optionally, in the above plasma etcher, the central gas inlet disk of the central gas inlet and uniform gas structure is directly arranged on or embedded in the end surface of the dielectric window away from the plasma reaction chamber.

[0026] Optionally, in the above plasma etcher, the central gas uniforming disk of the central gas inlet and uniform gas structure may be directly arranged on or embedded in the end surface of the dielectric window close to the plasma reaction chamber.

[0027] Optionally, in the above plasma etcher, a seal is provided between any two of the central gas inlet disk, the central gas uniforming disk and the dielectric window.

[0028] Optionally, in the above plasma etcher, the sealing member includes a first sealing ring and a second sealing ring, wherein the first sealing ring and the second sealing ring are arranged on the end faces where the central air inlet disk and the central air uniforming disk are in contact.

[0029] Optionally, in the above plasma etcher, the sealing member includes a third sealing ring and a fourth sealing ring, wherein the third sealing ring and the fourth sealing ring are arranged on the circumference where the central gas distribution disk and the dielectric window are in contact.

[0030] Optionally, in the above plasma etcher, the dielectric window and / or the central air inlet and uniform gas structure are made of non-metallic materials.

[0031] As can be seen from the above technical solution, the central gas inlet uniformity structure of the present invention includes a central gas injection passage and multiple edge gas injection passages. The central gas injection passage allows process gas to flow through the center, while the multiple edge gas injection passages allow process gas to flow through the edges. Compared with the existing technology, the uniformity of gas inlet to the plasma reaction chamber improves the uniformity of the plasma etcher's etching rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some examples or embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on the provided drawings without inventive work, and the present invention can also be applied to other similar scenarios based on the provided drawings. Unless otherwise apparent from the language context or otherwise explained, the same reference numerals in the figures represent the same structure or operation.

[0033] FIG1 is a schematic diagram of a plasma etcher provided in an embodiment of the present invention;

[0034] FIG2 is a schematic diagram of another plasma etcher provided in an embodiment of the present invention;

[0035] FIG3 is a partial bottom view of the plasma etcher shown in FIG2 ;

[0036] FIG4 is a cross-sectional view of section AA in FIG3 ;

[0037] FIG5 is an enlarged view of portion B in FIG4 ;

[0038] FIG6 is an enlarged view of portion C in FIG4 ;

[0039] FIG7 is a perspective view of a central air intake and uniform air flow structure provided by an embodiment of the present invention;

[0040] FIG8 is a cross-sectional view of a central air intake and uniform air flow structure provided by an embodiment of the present invention;

[0041] In the figure, 1-plasma reaction chamber, 2-dielectric window, 3-shielding cover, 4-plasma coupling coil, 5-excitation RF power supply, 6-excitation matching network, 7-bias electrode, 8-bias RF power supply, 9-bias matching network, 10-vacuum pump, 11-pressure control valve, 12-center gas source, 13-center nozzle, 14-edge gas source, 15-edge nozzle, 16-upper cover, 17-liner;

[0042] 100-wafer, 200-plasma;

[0043] 171-first lining segment, 172-second lining segment, 173-guide segment;

[0044] 130-central air inlet and uniform air structure, 131-central air inlet disk, 132-central air uniform air disk, 132a-embedded section, 132b-extension section;

[0045] 1311 - first air inlet pipe, 1312 - first air distribution hole, 1313 - first air inlet hole, 1314 - second air inlet pipe, 1315 - second air inlet hole;

[0046] 1321 - first connecting hole, 1322 - second connecting hole, 1323 - first spray hole, 1324 - second spray hole;

[0047] 1331 - first sealing ring, 1332 - second sealing ring, 1333 - third sealing ring, 1334 - fourth sealing ring. DETAILED DESCRIPTION

[0048] The present invention will be further described in detail below with reference to the accompanying drawings and examples. It will be understood that the specific embodiments described herein are intended only to explain the relevant invention and are not intended to limit the invention. The embodiments described are merely some embodiments of the present invention, not all embodiments. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are intended to fall within the scope of protection of the present invention.

[0049] Plasma etcher, also known as plasma plane etcher, plasma etcher, plasma surface treatment instrument, plasma cleaning system, etc., is used in the semiconductor industry. Inductively coupled plasma (ICP) etching is the result of the combined action of chemical and physical processes. Its basic principle is that under vacuum and low pressure, the radio frequency generated by the radio frequency power supply is output to the annular coupling coil, and a certain proportion of mixed etching gas is coupled through glow discharge to generate high-density plasma. Under the action of the radio frequency (RF) of the lower bias electrode, these plasmas bombard the wafer surface, breaking the chemical bonds of the semiconductor in the wafer pattern area, generating volatile substances with the etching gas, which are separated from the wafer in the form of gas and are extracted from the vacuum pipeline.

[0050] Referring to FIG1 , FIG1 shows a schematic structural diagram of a plasma etcher.

[0051] The plasma etcher shown in the figure includes a plasma reaction chamber 1, a shielding cover 3, a dielectric window 2, a plasma coupling coil 4, an excitation RF power supply 5, an excitation matching network 6, a bias electrode 7, a bias RF power supply 8, a bias matching network 9, a vacuum pump 10, a pressure control valve 11, a central gas source 12, a central nozzle 13, an edge gas source 14 and an edge nozzle 15.

[0052] The plasma reaction chamber 1 , the dielectric window 2 and the shielding cover 3 are arranged in sequence from bottom to top.

[0053] The plasma coupling coil 4 is arranged on the dielectric window 2 and located in the shielding cover 3; after the process gas provided by the central gas source 12 and the edge gas source 14 is sprayed into the plasma reaction chamber 1 through the central nozzle 13 and the edge nozzle 15, the exciting RF power supply 5 controls the plasma coupling coil 4 through the exciting matching network 6 to generate a high-density plasma 200.

[0054] The bias electrode 7 is located in the plasma reaction chamber 1 , and the bias RF power supply 8 controls the bias electrode 7 through a bias matching network 9 and provides a bias voltage for the wafer 100 placed on the bias electrode 7 .

[0055] The vacuum pump 10 is connected to the plasma reaction chamber 1 through a vacuum pipe. A pressure control valve 11 is arranged on the vacuum pipe, and the conduction state of the vacuum pipe is switched by the pressure control valve 11.

[0056] The central gas source is connected to a central nozzle 13 arranged in the middle of the dielectric window 2 , and the edge gas source is connected to an edge nozzle 15 arranged at the edge of the plasma reaction chamber 1 .

[0057] The etching process of the above plasma etcher is specifically as follows:

[0058] The process gas provided by the central gas source 12 and the edge gas source 14 is sprayed into the plasma reaction chamber 1 through the central nozzle 13 and the edge nozzle 15. The excitation RF power supply 5 controls the operation of the plasma coupling coil 4 through the excitation matching network 6. The process gas entering the plasma reaction chamber 1 generates plasma 200 under the coupling action of the plasma coupling coil 4. The plasma 200 is accelerated by the bias electrode 7 to bombard the wafer 100 to etch the wafer 100. The volatile substances generated during the etching process are extracted by the vacuum pump 10.

[0059] Currently, the edge nozzle 15 of the plasma 200 etcher is located far from the wafer 100, which tends to affect only the edge of the wafer 100, resulting in a faster edge etching rate. The center nozzle 13 of the plasma 200 etcher sprays air too closely toward the center of the wafer 100, which tends to cause a faster etching rate at the center of the wafer 100. The combined effect of these two factors tends to slow down the etching rate near half the diameter of the wafer 100.

[0060] In order to solve the above technical problems, an embodiment of the present invention discloses a central air intake and uniform gas structure 130, which is applied to a plasma etcher. By improving the air intake condition of the plasma etcher, the uniformity of the etching rate of the plasma etcher is improved.

[0061] Referring to FIG. 2 , FIG. 2 shows a schematic structural diagram of another plasma etching machine.

[0062] The illustrated plasma etcher may include a plasma reaction chamber 1, a dielectric window 2, a central gas source 12, and a central gas inlet and uniformizing structure 130. The dielectric window 2 encloses the upper portion of the plasma reaction chamber 1. The central gas inlet and uniformizing structure 130 is disposed at the center of the dielectric window 2 and communicates with the central gas source. The central gas source uniformly enters the plasma reaction chamber 1 through the central gas inlet and uniformizing structure 130, improving the uniformity of the plasma 200 during the etching process of the plasma etcher.

[0063] The dielectric window 2 includes a first end surface and a second end surface that are oppositely arranged, wherein the second end surface is located in the plasma reaction chamber 1 .

[0064] 3 and 4 , FIG3 shows a partial bottom view of the plasma etcher shown in FIG2 ; FIG4 is a sectional view of section AA in FIG3 ; FIG5 is an enlarged view of section B in FIG4 ; and FIG6 is an enlarged view of section C in FIG4 .

[0065] In this example of the present invention, the plasma etcher may further include an upper cover 16 , wherein the dielectric window 2 is located at the opening of the upper cover 16 , and the dielectric window 2 is used to arrange the central air intake and uniform air structure 130 ; the upper cover 16 is used to be installed at the opening of the plasma reaction chamber 1 .

[0066] In some other examples of the present invention, the plasma etcher may further include an inner liner 17, which is wrapped around the opening of the upper cover 16. In the figure, the inner liner 17 includes a first inner liner segment 171 extending in the axial direction and a second inner liner segment 172 extending in the radial direction, wherein the first inner liner segment 171 corresponds to the wall of the opening of the upper cover 16, and the second inner liner segment 172 overlaps all or part of the end surface of the upper cover 16 near the plasma reaction chamber 1. The inner liner 17 can protect the opening of the upper cover 16 to reduce the accumulation of etching products on the upper cover 16. After a certain amount of etching products are deposited on the inner liner 17, the inner liner 17 can be directly replaced without replacing the upper cover 16, thereby reducing replacement costs.

[0067] In the figure, the second liner segment 172 overlaps the portion of the upper cover 16 near the plasma reaction chamber 1. Furthermore, the portion of the upper cover 16 near the plasma reaction chamber 1 may be provided with a stepped surface, with the second liner segment 172 mounted on this stepped surface. In the figure, the end surface of the second liner segment 172 near the plasma reaction chamber 1 is flush with the remaining portion of the upper cover 16 near the plasma reaction chamber 1.

[0068] Furthermore, a guide section 173 is provided at the portion where the second lining section 172 and the first lining section 171 are connected.

[0069] In the example of the present invention, the central air inlet and uniform air structure 130 includes a central air inlet disk 131 and a central air uniforming disk 132, wherein the central air inlet disk 131 is located at the first end face of the dielectric window 2, and the central air uniforming disk 132 is located at the second end face of the dielectric window 2, and the central air inlet disk 131 is connected to the central gas source and the central air uniforming disk 132 to inject process gas into the plasma reaction chamber 1.

[0070] In the figure, the central air inlet disk 131 can be directly arranged on the first end surface of the dielectric window 2, or in some other examples of the present invention, the central air inlet disk 131 is embedded in the first end surface.

[0071] In the figure, the central air distribution disk 132 can be directly arranged on the second end surface of the dielectric window 2 , or in some other examples of the present invention, the central air distribution disk 132 is embedded in the second end surface of the dielectric window 2 .

[0072] In order to improve the air tightness between any two of the central air inlet disk 131 , the central air uniforming disk 132 and the dielectric window 2 , a sealing member is provided between any two of the central air inlet disk 131 , the central air uniforming disk 132 and the dielectric window 2 .

[0073] In the example of the present invention, the central air inlet disk 131 is directly arranged on the first end surface of the dielectric window 2 , and the central air distribution disk 132 is embedded in the second end surface of the dielectric window 2 .

[0074] The central air inlet disk 131 and the central air uniforming disk 132 are fitted together to achieve air communication between the two.

[0075] Seals are installed between the mating end surfaces of the central air inlet disk 131 and the central air distribution disk 132. The number and type of seals can be adjusted based on the configuration of the air inlet pipeline of the central air inlet disk 131 to isolate the air inlet pipeline from the outside world or to isolate adjacent air inlet pipelines. In the figure, the seals are two sealing rings, including a first sealing ring 1331 and a second sealing ring 1332. The first sealing ring 1331 is used to isolate the air inlet pipeline from the outside world, while the second sealing ring 1332 is used to isolate adjacent air inlet pipelines. Furthermore, the first sealing ring 1331 and the second sealing ring 1332 are arranged concentrically.

[0076] In some examples of the present invention, the first sealing ring 1331 and / or the second sealing ring 1332 are embedded in the end surface where the central air inlet disk 131 and the central air distribution disk 132 meet. Alternatively, in still other examples of the present invention, the first sealing ring 1331 and / or the second sealing ring 1332 are embedded in the end surface where the central air distribution disk 132 and the central air inlet disk 131 meet.

[0077] A seal is provided between the contact surfaces of the central gas distribution disk 132 and the dielectric window 2. The number and type of seals can be adjusted based on the configuration of the central gas distribution disk 132's inlet pipeline to isolate the inlet pipeline from the outside world. In the figure, the seal is a sealing ring, and two sealing rings are arranged: a third sealing ring 1333 and a fourth sealing ring 1334. The third sealing ring 1333 is used to isolate the inlet pipeline from the outside world, and the fourth sealing ring 1334 is used to isolate the inlet pipeline from the plasma reaction chamber 1.

[0078] In some examples of the present invention, the third sealing ring 1333 and / or the fourth sealing ring 1334 are embedded in the circumferential surface where the central air distribution disk 132 and the dielectric window 2 meet. Alternatively, in still other examples of the present invention, the third sealing ring 1333 and / or the fourth sealing ring 1334 are embedded in the hole wall where the dielectric window 2 and the central air distribution disk 132 meet.

[0079] The above mainly introduces the connection relationship between the central air intake and uniform air structure 130 and the dielectric window 2 in the embodiment of the present invention from the perspective of improving sealing. The following focuses on the layout of the air intake pipes of the central air intake and uniform air structure 130 with reference to the accompanying drawings.

[0080] 7 and 8 , FIG. 7 is a perspective view of a central air intake and uniform air structure 130 provided in accordance with an embodiment of the present invention; FIG. 8 is a cross-sectional view of a central air intake and uniform air structure 130 provided in accordance with an embodiment of the present invention.

[0081] The central air intake and uniform air structure 130 shown in the figure includes a central air intake disk 131 and a central air uniforming disk 132 , wherein the central air intake disk 131 and the central air uniforming disk 132 are fitted together to achieve air communication between the two.

[0082] To facilitate understanding of the technical solution of the present invention, the central air inlet and uniformizing structure 130, the central air inlet disk 131, and the central air uniforming disk 132 all have axial and radial directions, wherein the axial and radial directions are perpendicular to each other. When the central air inlet disk 131 and the central air uniforming disk 132 are in place, the axial directions of the central air inlet and uniformizing structure 130, the axial directions of the central air inlet disk 131, and the axial directions of the central air uniforming disk 132 are all parallel, and the radial directions of the central air inlet and uniforming structure 130, the radial directions of the central air inlet disk 131, and the radial directions of the central air uniforming disk 132 are all parallel.

[0083] The central air intake disk 131 has a first end face and a second end face arranged opposite to each other in the axial direction, wherein the first end face is farther away from the central air uniforming disk 132 than the second end face, and the second end face is closer to the central air uniforming disk 132 than the first end face; the central air intake disk 131 also has a circumferential surface, which connects the first end face and the second end face.

[0084] The central air uniforming disk 132 has a first end face and a second end face arranged opposite to each other in the axial direction, wherein the first end face is closer to the central air intake disk 131 than the second end face, and the second end face is farther away from the central air intake disk 131 than the first end face; the central air uniforming disk 132 also has a circumferential surface, which connects the first end face and the second end face.

[0085] Specifically, the central air intake disk 131 includes a first air intake pipe 1311, a first air distribution hole 1312, a first air intake hole 1313, a second air intake pipe 1314 and a second air intake hole 1315, wherein the first air intake pipe 1311 is used to connect with the central air source; the first air distribution hole 1312 connects the first air intake pipe 1311 and the first air intake hole 1313; the first air intake hole 1313 is located at the edge of the central air intake disk 131 and extends axially; the second air intake pipe 1314 is used to connect with the central air source and connect with the second air intake hole 1315; the second air intake hole 1315 is located in the middle of the central air intake disk 131 and is arranged along the axial extension of the central air intake disk 131.

[0086] The central air uniforming disk 132 includes a first connecting hole 1321, a second connecting hole 1322, a first spray hole 1323 and a second spray hole 1324, wherein the first connecting hole 1321 is used to dock with the first air inlet hole 1313, the second connecting hole 1322 connects the first spray hole 1323 and the first connecting hole 1321, and the second connecting hole 1322 extends radially along the central air uniforming disk 132; the second spray hole 1324 is used to dock with the second air inlet hole 1315; when the first end face of the central air uniforming disk 132 is in contact with the second end face of the central air inlet disk 131, the first connecting hole 1321 docks with the first air inlet hole 1313, and the second spray hole 1324 docks and connects with the second air inlet hole 1315.

[0087] It should be noted that there are multiple first air distribution holes 1312 and first air inlet holes 1313, and they correspond one to one. All of the multiple first air distribution holes 1312 are connected to the first air inlet pipe 1311. The first air inlet pipe 1311 in the example of the present invention can be arranged on the first end surface of the central air inlet disk 131 or on the circumference of the central air inlet disk 131. Preferably, the first air inlet pipe 1311 is arranged at the center of the first end surface of the central air inlet disk 131; the first air distribution holes 1312 extend radially from the center of the central air inlet disk 131 to the edge of the central air inlet disk 131 and are connected to the first air inlet holes 1313.

[0088] There is one second air inlet hole 1315, which is isolated from the first air inlet hole 1313. The second air inlet pipe 1314 of the present invention can be arranged on the first end surface of the central air inlet disk 131 or on the circumference of the central air inlet disk 131. Preferably, the second air inlet pipe 1314 is arranged on the circumference of the central air inlet disk 131 to avoid the first air inlet pipe 1311.

[0089] In some other examples of the present invention, the first air inlet pipe 1311 and the second air inlet pipe 1314 may be the same air inlet pipe. In some other examples of the present invention, if the first air inlet pipe 1311 and the second air inlet pipe 1314 are different air inlet pipes, the jetting effect of the first nozzle 1323 and the second nozzle 1324 can be adjusted by independently controlling the conduction state of the first air inlet pipe 1311 and the second air inlet pipe 1314. The amount of process gas ejected from the second nozzle 1324 and the first nozzle 1323 can be adjusted as needed.

[0090] There are multiple first connecting holes 1321 and second connecting holes 1322, each corresponding to the other. First connecting holes 1321 extend axially, while second connecting holes 1322 extend radially. Second connecting holes 1322 position first nozzle 1323 away from second nozzle 1324, thereby improving air intake. In some examples of the present invention, by adjusting the positions of second connecting holes 1322 and first nozzle 1323 so that first nozzle 1323 is positioned in a location with a stronger electric field, the ejected process gas is less likely to be directly withdrawn or have low ionization efficiency, thereby meeting different process requirements.

[0091] The first spray hole 1323 can extend axially or at an angle to the axial direction to ensure that the process gas is ejected at an angle. There can be one or more second spray holes 1324, which are isolated from the first spray holes 1323. The nozzles of the second spray holes 1324 can also be provided with a chamfered nozzle to disperse the process gas ejected therefrom, further enhancing the uniformity of the gas flow.

[0092] The central air inlet disk 131 is a cylindrical structure, and the structure can be adjusted as needed, such as a cubic structure, an elliptical column structure, etc.

[0093] In a preferred example of the present invention, the central gas distribution disk 132 is embedded in the second end surface of the dielectric window 2 .

[0094] To reduce the volume occupied by the central air distribution disk 132 , the central air distribution disk 132 includes an embedded section 132 a and an extended section 132 b . The embedded section 132 a is embedded in the mounting hole of the dielectric window 2 , and the extended section 132 b extends radially from the embedded section 132 a away from the axis.

[0095] Furthermore, the first communicating hole 1321 is mainly arranged in the embedded section 132a, the second communicating hole 1322 is mainly arranged in the extending section 132b, and the first spray hole 1323 is arranged in the extending section 132b.

[0096] The above first air inlet hole 1313, a first connecting hole 1321, a second connecting hole 1322 and a first nozzle 1323 form an edge jet passage, and the second air inlet hole 1315 and the second nozzle 1324 form a central jet passage. In the above example of the present invention, the situation including multiple edge jet passages is mainly introduced, and the multiple edge jet passages are arranged around the central jet passage.

[0097] Furthermore, the distances between the plurality of edge jet passages and the central jet passage are the same or different. The angles between two adjacent edge jet passages in the plurality of edge jet passages are the same.

[0098] As can be seen from the above description, a first sealing ring 1331 and a second sealing ring 1332 are arranged between the central air inlet disk 131 and the central air uniforming disk 132, wherein the first sealing ring 1331 is located on the outer periphery of the second sealing ring 1332, wherein the first sealing ring 1331 is used to isolate multiple edge jet paths from the outside world, and the second sealing ring 1332 is used to isolate the central jet path from multiple edge jet paths.

[0099] A third sealing ring 1333 and a fourth sealing ring 1334 are arranged between the central gas distribution plate 132 and the dielectric window 2. The third sealing ring 1333 is arranged on the outer periphery of the embedded section 132a, and the fourth sealing ring 1334 is arranged on the circumference of the extension section 132b to isolate the second connecting hole 1322 from the plasma sub-reaction chamber.

[0100] The dielectric window 2 and the central air inlet and uniform air structure 130 are made of non-metallic materials, such as ceramics, quartz, etc.

[0101] The terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features.

[0102] The above description is only a preferred embodiment of the present invention and an illustration of the technical principles used, and is not intended to limit the present invention. For those skilled in the art, the present invention can be modified and varied in various ways. The scope of the invention involved in the present invention is not limited to the technical solutions formed by a specific combination of the above-mentioned technical features, but should also cover other technical solutions formed by any combination of the above-mentioned technical features or their equivalent features without departing from the above-mentioned inventive concept. For example, the above-mentioned features are replaced with the technical features with similar functions disclosed in the present invention (but not limited to) by each other to form a technical solution.

Claims

1. A central air intake and air distribution structure, characterized in that, It includes a central air inlet disk and a central air distribution disk. Among them, the central air inlet disk and the central air distribution disk form a central jet passage and a plurality of edge jet passages, and the plurality of edge jet passages are arranged around the central jet passage.

2. The central air intake and air distribution structure according to claim 1, wherein, The central air inlet disk includes a first air inlet pipe, a first air distribution hole, a first air inlet hole, a second air inlet pipe, and a second air inlet hole. Among them, the first air inlet pipe is used to communicate with a central air source; the first air distribution hole connects the first air inlet pipe and the first air inlet hole; the first air inlet hole is located at the edge of the central air inlet disk and extends axially; the second air inlet pipe is used to communicate with the central air source and is connected to the second air inlet hole; the second air inlet hole is located in the middle of the central air inlet disk and extends axially; The central air distribution disk includes a first communication hole, a second communication hole, a first jet hole, and a second jet hole. Among them, the first communication hole is docked with the first air inlet hole, and the second jet hole is connected to the second air inlet hole; the second communication hole connects the first jet hole and the first communication hole, and the second communication hole extends radially; One first air inlet hole, one first communication hole, one second communication hole, and one first jet hole form one of the edge jet passages; the second air inlet hole and the second jet hole form the central jet passage.

3. The central air intake and air distribution structure according to claim 2, wherein, The central air distribution disk includes an embedded section and an extended section. Among them, the embedded section is embedded in the mounting hole of the dielectric window, and the extended section extends radially away from the axis from the embedded section.

4. The central air intake and air distribution structure according to claim 3, characterized in that, The first communication hole is arranged in the embedded section, and the second communication hole and the first jet hole are arranged in the extended section.

5. The central air intake and air distribution structure according to claim 2, characterized in that, The first jet hole extends axially; or the first jet hole is arranged obliquely with respect to the axis.

6. The central air intake and air distribution structure according to claim 2, characterized in that, A jet chamfer is provided at the nozzle of the second jet hole.

7. The central air intake and air distribution structure according to claim 2, characterized in that, The first air inlet pipe and the second air inlet pipe are the same air inlet pipe, or the first air inlet pipe and the second air inlet pipe are different air inlet pipes.

8. A plasma etching machine, characterized in that, It includes a plasma reaction chamber, a dielectric window, a central air source, and the central air inlet and distribution structure according to any one of claims 1 to 7. Among them, the dielectric window closes the upper part of the plasma reaction chamber, and the central air inlet and distribution structure is arranged at the center of the dielectric window and is communicated with the central air source.

9. The plasma etching machine according to claim 8, characterized in that, The plasma etching machine further includes an upper cover. Among them, the dielectric window is located at the opening of the upper cover, and the dielectric window is used to arrange the central air inlet and distribution structure; the upper cover is used to be installed at the opening of the plasma reaction chamber.

10. The plasma etching machine according to claim 9, wherein The plasma etching machine further includes a lining, and the lining wraps around the opening of the upper cover.

11. The plasma etching machine according to claim 10, wherein The lining includes a first lining section extending axially and a second lining section extending radially. Among them, the first lining section corresponds to the wall of the opening of the upper cover, and the second lining section overlaps all or part of the end face of the upper cover close to the plasma reaction chamber.

12. The plasma etching machine according to claim 11, wherein, A guiding section is provided at the joint of the second lining section and the first lining section.

13. The plasma etching machine according to claim 11, characterized in that, A stepped surface is provided on a part of the end face of the upper cover close to the plasma reaction chamber, and the second lining section is installed on the stepped surface.

14. The plasma etching machine according to any one of claims 8 to 13, characterized in that, The central air inlet disk of the central air inlet and air distribution structure is directly arranged on or embedded in the end face of the dielectric window away from the plasma reaction chamber.

15. The plasma etching machine according to claim 14, wherein, A seal is provided between any two of the central air inlet disk, the central air distribution disk, and the dielectric window.

Images