Photoelectric packaging structure and manufacturing method therefor

Abstract

The present invention provides a photoelectric packaging structure and a manufacturing method therefor, comprising the following steps: providing an integrated electric chip comprising a plurality of electric chip units, and forming a plurality of reflective chip structures on the basis thereof, each reflective chip structure being an electric chip unit having a reflective portion attached to at least one side wall, and a reflective surface of the reflective portion being at a preset angle with a bottom surface of the electric chip unit; providing a substrate, and electrically connecting the reflective chip structures to the substrate; providing at least one semiconductor edge-emitting laser spaced a first preset distance from the reflective chip structures, and electrically connecting same to the substrate, the reflective surfaces being located on an optical path of light emitted by the semiconductor edge-emitting laser; forming a protective casing above the substrate, the protective casing being spaced a second preset distance from a side of the semiconductor edge-emitting laser away from the reflective chip structures, and a light emission opening being provided thereabove; and forming a light transmission component above the protective casing and covering the light emission opening. The photoelectric package structure and the manufacturing method therefor of the present invention reduce the package size of the photoelectric package structure.

Description

Photoelectric package structure and manufacturing method thereof Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a photoelectric packaging structure and a manufacturing method thereof. Background Art

[0002] The optoelectronic packaging structure refers to the integration of integrated electronic chips and lasers on the same substrate to form a co-packaging of chips and modules, which has the characteristics of high integration, support for high data rates and low cost.

[0003] At present, semiconductor edge-emitting lasers (EELs) are an important part of the optoelectronics industry. As shown in Figure 1, it is a structural diagram of an edge-emitting semiconductor laser, including a P layer 01, N layers 02 and 03, and a laser chip 04. It usually adopts a traditional packaging process. As shown in Figure 2, it is a packaging structure diagram of a semiconductor edge-emitting laser, including a semiconductor laser chip 04, a substrate 05, a conductive base 06, a welding wire 07, a prism 08, a copper cup 09, a light-transmitting component 10, and an adhesive 11. By setting a conductive base on the surface of the substrate, the laser chip is set on the side of the conductive base facing away from the substrate, so that the laser chip is parallel to the conductive base, ensuring that the welding wire connecting the laser chip and the conductive base is a planar structure, thereby improving the welding wire reliability and production efficiency. The output light of the laser chip is reflected by the reflective component.

[0004] In addition, due to the large size of the integrated electronic chip, packaging the semiconductor edge-emitting laser with the integrated electronic chip requires setting up a specific reflective component to reflect the light of the semiconductor edge-emitting laser, which makes it difficult to meet the requirements of high-density integrated packaging.

[0005] In view of this, there is an urgent need for a method for manufacturing an optoelectronic package structure that can integrate a semiconductor laser chip and an electronic chip while also having a small package size. Summary of the Invention

[0006] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide an optoelectronic package structure and a manufacturing method thereof, so as to solve the problem of large package size of the integrated package of semiconductor laser chip and electronic chip in the prior art.

[0007] To achieve the above-mentioned and other related objectives, the present invention provides a method for manufacturing an optoelectronic package structure, comprising the following steps:

[0008] An integrated electronic chip comprising a plurality of electronic chip units is provided. A plurality of reflective chip structures are formed based on the integrated electronic chip. Each reflective chip structure is a single electronic chip unit having a reflective portion attached to at least one side wall thereof. A reflective surface of the reflective portion forms a predetermined angle with a bottom surface of the electronic chip unit.

[0009] Providing a substrate, and electrically connecting the reflective chip structure to the substrate;

[0010] Providing at least one semiconductor edge-emitting laser, electrically connecting the semiconductor edge-emitting laser to the substrate, wherein the semiconductor edge-emitting laser is spaced apart from the reflective chip structure by a first preset distance, and the reflective surface of the reflective portion is located on an optical path of light emitted by the semiconductor edge-emitting laser;

[0011] forming a protective shell above the substrate, surrounding the semiconductor edge-emitting laser and the reflective chip structure, wherein the protective shell is spaced a second predetermined distance from a side of the semiconductor edge-emitting laser away from the reflective chip structure, and a light outlet is provided above the protective shell;

[0012] A light-transmitting component covering the light outlet is formed above the protective shell.

[0013] Optionally, forming the reflective chip structure includes the following steps: slicing the integrated electrical chip to obtain a single electrical chip unit having a single-slope sidewall, forming the reflective portion on at least one side wall of the electrical chip unit to obtain the reflective chip structure, wherein the single-slope sidewall of the electrical chip unit serves as the reflective surface.

[0014] Optionally, forming the reflective chip structure includes the following steps: slicing the integrated electrical chip to obtain a single electrical chip unit having a stepped sidewall, forming the reflective portion on at least one side wall of the electrical chip unit to obtain the reflective chip structure, wherein the stepped sidewall of the electrical chip unit includes a vertical surface and an inclined surface, and the inclined surface serves as the reflective surface.

[0015] Optionally, forming the reflective chip structure includes the following steps: forming a plurality of grooves in the integrated electrical chip, forming a filling layer in the grooves and slicing the filling layer to obtain a single electrical chip unit, forming the reflective portion on at least one side wall of the electrical chip unit to obtain the reflective chip structure, wherein the side wall of the filling layer after slicing serves as the reflective surface.

[0016] Optionally, the integrated electric chip is sliced ​​to obtain a single electric chip unit, an adhesion layer is formed on the upper surface of the electric chip unit, and the reflective part is adhered above the electric chip unit to obtain the reflective chip structure, wherein the side wall of the reflective part serves as the reflective surface.

[0017] Optionally, a method of forming the reflective portion includes sputtering, coating, and mold forming.

[0018] Optionally, the reflective portion includes a highly reflective metal layer and a composite layer thereof.

[0019] Optionally, the semiconductor edge-emitting laser includes a laser diode and a semiconductor laser chip.

[0020] Optionally, a plurality of pads are provided in the substrate, the reflective chip structure is electrically connected to the substrate via the pads, and the semiconductor edge-emitting laser is electrically connected to the substrate via the pads.

[0021] Optionally, after electrically connecting the semiconductor edge-emitting laser to the substrate and before forming the protective shell, the method further includes forming a bottom filling glue under the semiconductor edge-emitting laser and the reflective chip structure.

[0022] Optionally, a protrusion is provided on the protective shell, and the light-transmitting component is arranged above the protective shell through the protrusion.

[0023] The present invention further provides a photoelectric package structure, which is manufactured using any one of the above-mentioned methods for manufacturing a photoelectric package structure.

[0024] As described above, the optoelectronic package structure and the manufacturing method thereof of the present invention have the following beneficial effects: the optoelectronic package structure and the manufacturing method thereof of the present invention form the electric chip unit with a reflective portion attached to at least one side wall as the reflective chip structure, and the reflective surface of the reflective portion is at a preset angle to the bottom surface of the electric chip unit, and the reflective surface of the reflective portion is located on the optical path of the outgoing light of the semiconductor edge-emitting laser. The outgoing light of the semiconductor edge-emitting laser is directly reflected out of the light-transmitting component through the reflective portion, and no additional reflective component is required. That is, the optoelectronic package structure of the present invention not only realizes the integrated packaging of the integrated electric chip and the semiconductor laser chip, but also reduces the packaging size of the optoelectronic package structure. In addition, the light-transmitting component is arranged on the protective shell through the protrusion on the protective shell, which prevents the light-transmitting component from slipping. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] FIG1 is a schematic structural diagram of an edge-emitting semiconductor laser in the prior art.

[0026] FIG. 2 shows a package structure diagram of an edge-emitting semiconductor laser in the prior art.

[0027] FIG. 3 is a schematic diagram showing the manufacturing process of the optoelectronic package structure of the present invention.

[0028] FIG4 is a schematic structural diagram of an integrated circuit chip according to the present invention.

[0029] FIG. 5 is a schematic structural diagram showing the arrangement of an integrated electronic chip on a dicing tape according to the present invention.

[0030] FIG6 is a schematic diagram showing a structure of an integrated circuit chip after dicing according to the present invention.

[0031] FIG. 7 is a schematic diagram showing a structure of the present invention after forming a reflective portion.

[0032] FIG8 is a schematic diagram showing a structure of the reflective chip structure of the present invention after being electrically connected to the substrate.

[0033] FIG9 is a schematic structural diagram showing the semiconductor edge-emitting laser of the present invention after being electrically connected to the substrate.

[0034] FIG. 10 is a schematic diagram showing a structure after forming the bottom filling glue of the present invention.

[0035] FIG. 11 is a schematic diagram showing a structure of the present invention after a protective shell is formed.

[0036] FIG. 12 is a schematic diagram showing a structure of the present invention after forming a light-transmitting component.

[0037] FIG. 13 shows another structural schematic diagram of the integrated circuit chip after dicing according to the present invention.

[0038] FIG. 14 is a schematic diagram showing another structure of the present invention after forming a reflective portion.

[0039] FIG. 15 is another schematic diagram showing the structure of the reflective chip of the present invention after being electrically connected to the substrate.

[0040] FIG. 16 is another schematic diagram showing the structure of the present invention after forming the bottom filling glue.

[0041] FIG. 17 is a schematic diagram showing another structure of the present invention after forming a protective shell.

[0042] FIG. 18 is another schematic diagram showing the structure of the present invention after forming the light-transmitting component.

[0043] FIG. 19 is a schematic diagram showing the structure of the present invention after grooves are formed.

[0044] FIG20 is a schematic diagram showing the structure of the present invention after forming a filling layer.

[0045] FIG21 is a schematic diagram showing the structure of the filling layer after slicing according to the present invention.

[0046] FIG. 22 is a schematic diagram showing a third structure of the present invention after forming a reflective portion.

[0047] FIG. 23 is a schematic diagram showing a third structure after forming the bottom filling glue according to the present invention.

[0048] FIG. 24 is a schematic diagram showing a third structure of the present invention after forming a protective shell.

[0049] FIG. 25 is a schematic diagram showing a third structure after forming a light-transmitting component according to the present invention.

[0050] FIG26 is a schematic diagram showing the structure of the semiconductor edge-emitting laser after being electrically connected to the substrate of the present invention.

[0051] FIG. 27 is a schematic diagram showing a fourth structure after forming the bottom filling glue according to the present invention.

[0052] FIG. 28 is a schematic diagram showing a fourth structure after forming a light-transmitting component according to the present invention.

[0053] FIG. 29 is a schematic top view showing a partial structure of the optoelectronic package structure of the present invention.

[0054] Component Reference Numbers 01 P layer 02 N layer 03 Excitation layer 04 Semiconductor laser chip 05 Substrate 06 Conductive base 07 Bonding wire 08 Prism 09 Copper cup 10 Translucent component 11 Adhesive 1 Integrated electronic chip 11 Electronic chip unit 12 First solder ball 13 Filling layer 14 Groove 2 Reflective chip structure 21 Reflecting part 3 Dicing tape 31 Fixing block 4 Cutting knife 5 Substrate 51 Pad 52 Solder 6 Semiconductor edge-emitting laser 61 Laser diode 62 Semiconductor laser chip 63 Second solder ball 7 Protective shell 71 Solder block 72 Protrusion 73 Light outlet 8 Underfill 9 Translucent component 91Adhesive 10 Adhesive layer DETAILED DESCRIPTION

[0055] The following describes the implementation of the present invention through specific embodiments. People skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

[0056] Please refer to Figures 1 to 29. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention. Therefore, they have no substantial technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the efficacy and purpose that can be achieved by the present invention. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description and are not used to limit the scope of the implementation of the present invention. Changes or adjustments in their relative relationships should also be considered as the scope of the implementation of the present invention without substantially changing the technical content.

[0057] Example 1

[0058] The present invention provides a method for manufacturing a photovoltaic package structure. FIG3 is a schematic diagram of the manufacturing process of the photovoltaic package structure, which includes the following steps:

[0059] S1: providing an integrated electronic chip comprising a plurality of electronic chip units, and forming a plurality of reflective chip structures based on the integrated electronic chip, wherein the reflective chip structure is a single electronic chip unit having a reflective portion attached to at least one side wall thereof, wherein a reflective surface of the reflective portion forms a predetermined angle with a bottom surface of the electronic chip unit;

[0060] S2: providing a substrate, and electrically connecting the reflective chip structure to the substrate;

[0061] S3: providing at least one semiconductor edge-emitting laser, electrically connecting the semiconductor edge-emitting laser to the substrate, wherein the semiconductor edge-emitting laser is spaced apart from the reflective chip structure by a first preset distance, and the reflective surface of the reflective portion is located on an optical path of an outgoing light from the semiconductor edge-emitting laser;

[0062] S4: forming a protective shell above the substrate, surrounding the semiconductor edge-emitting laser and the reflective chip structure, wherein the protective shell is spaced a second predetermined distance from a side of the semiconductor edge-emitting laser away from the reflective chip structure, and a light outlet is provided above the protective shell;

[0063] S5: forming a light-transmitting component covering the light outlet on the protective shell.

[0064] Specifically, please refer to Figures 4 to 7, perform step S1, provide an integrated electric chip 1 including multiple electric chip units 11, and form multiple reflective chip structures 2 based on the integrated electric chip 1. The reflective chip structure 2 is a single electric chip unit 11 with a reflective portion 21 attached to at least one side wall, and the reflective surface of the reflective portion 21 is at a preset angle to the bottom surface of the electric chip unit 11.

[0065] Specifically, under the condition that the performance of the optoelectronic package structure is met, the size and material of the integrated electronic chip 1 can be selected according to actual conditions and are not limited here.

[0066] Specifically, as shown in FIG4 , which is a schematic structural diagram of the integrated electric chip 1 , a first solder ball 12 is further provided below the electric chip unit 11 .

[0067] Specifically, the size and material of the first solder ball 12 can be selected according to actual conditions while meeting the performance of the optoelectronic package structure, and are not limited here.

[0068] As an example, forming the reflective chip structure 2 includes the following steps: slicing the integrated electrical chip 1 to obtain a single electrical chip unit 11 having a single-slope sidewall, forming the reflective portion 21 on at least one side wall of the electrical chip unit 11 to obtain the reflective chip structure 2, wherein the single-slope sidewall of the electrical chip unit 11 serves as the reflective surface.

[0069] Specifically, as shown in Figures 5 and 6, they are respectively a structural schematic diagram of setting the integrated electric chip 1 on the cutting tape 3 and a structural schematic diagram after the integrated electric chip 1 is diced. The dicing of the integrated electric chip 1 includes the following steps: setting the integrated electric chip 1 on the cutting tape 3, and fully cutting the integrated electric chip 1 to obtain the electric chip unit 11 with a single-slope side wall.

[0070] Specifically, under the condition that the performance of the optoelectronic package structure is met, the size and material of the dicing tape 3 can be selected according to actual conditions and are not limited here.

[0071] Specifically, the integrated electronic chip 1 is placed on the dicing tape 3 for dicing, thereby preventing the integrated electronic chip 1 from being damaged due to stress during the dicing process.

[0072] Specifically, fixing blocks 31 are provided on both sides of the dicing tape 3 to ensure that the dicing tape 3 is in an extended state and to define a dicing area on the integrated circuit chip 1 .

[0073] Specifically, the method of dicing the integrated electronic chip 1 includes at least one of knife dicing, laser dicing, or other suitable dicing methods.

[0074] Specifically, when the integrated electric chip 1 is cut by a cutting knife, a cutting knife 4 can be selected to perform a single-knife full-cut on the integrated electric chip to obtain a single electric chip unit 11 with a single-bevel sidewall.

[0075] Specifically, the side wall of the electric chip unit 11 and the bottom surface of the electric chip unit 11 form a preset angle ranging from 0 degrees to 90 degrees.

[0076] As an example, the reflective portion 21 includes a highly reflective metal layer or a composite layer thereof or other suitable materials.

[0077] As an example, as shown in FIG7 , it is a structural schematic diagram after the reflection portion 21 is formed. The method of forming the reflection portion 21 includes sputtering, coating or other suitable methods.

[0078] Specifically, after forming the reflective portion 21 , the dicing tape 3 is removed to obtain a single reflective chip structure 2 .

[0079] Specifically, referring to FIG. 8 , step S2 is performed to provide a substrate 5 and electrically connect the reflective chip structure 2 to the substrate 5 .

[0080] Specifically, under the condition that the performance of the optoelectronic package structure is met, the size and material of the substrate 5 can be selected according to actual conditions and are not limited here.

[0081] As an example, as shown in FIG8 , it is a schematic structural diagram of the reflective chip structure 2 after being electrically connected to the substrate 5 . The substrate 5 is provided with a plurality of pads 51 , and the reflective chip structure 2 is electrically connected to the substrate 5 through the pads 51 .

[0082] Specifically, the reflective chip structure 3 is electrically connected to the solder pad 51 in the substrate 5 through the first solder ball 12 .

[0083] Specifically, solder 52 electrically connected to the pad 51 is further provided under the substrate 5 .

[0084] Specifically, referring to Figures 9-10, perform step S3, provide at least one semiconductor edge-emitting laser 6, electrically connect the semiconductor edge-emitting laser 6 to the substrate 5, and separate the semiconductor edge-emitting laser 6 from the reflective chip structure 2 by a first preset distance. The reflective surface of the reflective portion 21 is located on the optical path of the outgoing light of the semiconductor edge-emitting laser 6.

[0085] As an example, FIG9 is a schematic structural diagram of the semiconductor edge emitting laser 6 after being electrically connected to the substrate 5 . The semiconductor edge emitting laser 6 includes a laser diode 61 and a semiconductor laser chip 62 .

[0086] Specifically, the laser diode 61 and the semiconductor laser chip 62 are arranged in parallel.

[0087] Specifically, the outgoing light of the semiconductor edge emitting laser 6 is emitted by the semiconductor laser chip 62 and emitted from the side surface of the semiconductor edge emitting laser 6 .

[0088] Specifically, the semiconductor edge-emitting laser 6 is spaced apart from the reflective chip structure 2 by a first preset distance.

[0089] Specifically, the semiconductor edge emitting laser 6 and the reflective chip structure 2 are arranged horizontally corresponding to each other to ensure that the light emitted by the semiconductor edge emitting laser 6 can illuminate the reflective portion on the side wall of the reflective chip structure 2 .

[0090] Specifically, while satisfying the performance of the optoelectronic package structure, the spacing distance between the semiconductor edge-emitting laser 6 and the reflective chip structure 2 and the number of the semiconductor edge-emitting lasers 6 can be selected according to actual conditions and are not limited here.

[0091] As an example, a plurality of pads 51 are provided in the substrate 5 , and the semiconductor edge-emitting laser 6 is electrically connected to the substrate 5 via the pads 51 .

[0092] Specifically, the semiconductor edge emitting laser 6 is electrically connected to the solder pad 51 in the substrate 5 through a second solder ball 63 .

[0093] As an example, as shown in Figure 10, which is a structural schematic diagram after the bottom filling glue 8 is formed, after the semiconductor edge emitting laser 63 is electrically connected to the substrate and before the protective shell 7 is formed, it also includes a step of forming the bottom filling glue 8 under the semiconductor edge emitting laser 6 and the reflective chip structure 2.

[0094] Specifically, the bottom filling glue 8 plays a role in protecting the semiconductor edge-emitting laser 6 and the reflective chip structure 2 .

[0095] Specifically, under the condition that the performance of the optoelectronic package structure is met, the size and material of the bottom filling glue 8 can be selected according to actual conditions and are not limited here.

[0096] Specifically, referring to Figures 11-12, steps S4-S5 are performed to form a protective shell 7 surrounding the semiconductor edge-emitting laser 6 and the reflective chip structure 2 above the substrate 5. The protective shell 7 is spaced a second preset distance from the side of the semiconductor edge-emitting laser 6 away from the reflective chip structure 2, and a light outlet 73 is provided above the protective shell 7; a light-transmitting component 9 covering the light outlet 73 is formed above the protective shell 7.

[0097] Specifically, as shown in FIG11 , it is a structural schematic diagram after the protective shell 7 is formed. The protective shell 7 is welded on the substrate 5 through welding blocks 71 .

[0098] Specifically, under the condition that the performance of the optoelectronic package structure is met, the size, shape and material of the protective shell 7 can be selected according to actual conditions and are not limited here.

[0099] As an example, a protrusion 72 is provided on the protective shell 7 , and the light-transmitting component 8 is disposed above the protective shell 7 through the protrusion 72 .

[0100] Specifically, the light-transmitting component 8 is disposed above the protective shell 7 through the protrusion 72 , thereby preventing the light-transmitting component 8 from slipping.

[0101] Specifically, the protective shell 7 is spaced a second preset distance from the side of the semiconductor edge-emitting laser 6 away from the reflective chip structure 2, which is used to protect the semiconductor edge-emitting laser 6 and the reflective chip structure 2 while ensuring the heat dissipation performance of the optoelectronic package structure.

[0102] As an example, as shown in FIG12 , it is a structural schematic diagram after the light-transmitting component 9 is formed, and the light-transmitting component 9 is bonded to the top of the protective shell by an adhesive 91 .

[0103] Specifically, the light emitted by the semiconductor edge-emitting laser 6 is reflected by the reflective chip structure 3 and emitted from the light-transmitting component 9 .

[0104] Specifically, the integrated electric chip 1 is diced to obtain a single electric chip unit 11 having a single-slope sidewall, and the reflective portion 21 is formed on at least one side wall of the electric chip unit 11 to obtain the reflective chip structure 2, wherein the single-slope sidewall of the electric chip unit 11 serves as the reflective surface, and the outgoing light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflective portion 21 located on the side wall of the electric chip unit 11, without the need to set up an additional reflective component, which not only realizes the integrated packaging of the integrated electric chip 1 and the semiconductor laser emitter 6, but also reduces the packaging size of the optoelectronic package structure.

[0105] The manufacturing method of the optoelectronic package structure of this embodiment is to obtain a single electric chip unit 11 with a single-bevel side wall by slicing the integrated electric chip 1, and forming the reflective portion 21 on at least one side wall of the electric chip unit 11 to obtain the reflective chip structure 2, wherein the single-bevel side wall of the electric chip unit 11 serves as the reflective surface, and the outgoing light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflective portion 21 located on the side wall of the electric chip unit 11, without the need to set up an additional reflective component, which not only realizes the integrated packaging of the integrated electric chip 1 and the semiconductor laser emitter 6, but also reduces the packaging size of the optoelectronic package structure.

[0106] Example 2

[0107] This embodiment provides another method for manufacturing an optoelectronic package structure, please refer to Figures 13 to 18. The method for manufacturing the optoelectronic package structure described in this embodiment is improved based on the method for manufacturing the optoelectronic package structure described in Example 1. Forming the reflective chip structure 2 includes the following steps: dicing the integrated electronic chip 1 to obtain a single electronic chip unit 11 with a stepped sidewall, forming the reflective portion 21 on at least one side wall of the electronic chip unit 11 to obtain the reflective chip structure 2, wherein the stepped sidewall of the electronic chip unit 11 includes a vertical surface and an inclined surface, and the inclined surface serves as the reflective surface.

[0108] Specifically, the method of dicing the integrated electronic chip 1 includes at least one of knife dicing, laser dicing, or other suitable dicing methods.

[0109] Specifically, as shown in Figures 13 and 14, they are another structural schematic diagram of slicing the integrated electric chip 1 and another structural schematic diagram after the reflection part 2 is formed. When the integrated electric chip 1 is cut by a cutting knife, a cutting knife 4 can be selected to perform double-knife full cutting on the integrated electric chip to obtain a single electric chip unit 11 whose side wall is the stepped surface, wherein the inclined surface in the stepped surface serves as the reflection surface.

[0110] Specifically, as shown in Figures 15 to 18, they are another structural schematic diagram after electrically connecting the reflective chip structure 2 to the substrate 5, another structural schematic diagram after forming the bottom filling glue 8, another structural schematic diagram after forming the protective shell 7, and another structural schematic diagram after forming the light-transmitting component 9. The electrical connection of the reflective chip structure 2 to the substrate 5, the electrical connection of the semiconductor edge-emitting laser 6 to the substrate 5, and the subsequent formation of the bottom filling glue 8, the protective shell 7, and the light-transmitting component 9 can refer to Example 1 and will not be repeated here.

[0111] Specifically, the integrated electric chip 1 is diced to obtain a single electric chip unit 11 having a stepped side wall, and the reflecting portion 21 is formed on at least one side wall of the electric chip unit 11 to obtain the reflective chip structure 2, wherein the inclined surface in the stepped side wall of the electric chip unit 11 serves as the reflecting surface, and the outgoing light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflecting portion 21 located on the side wall of the electric chip unit 11, without the need to set up an additional reflecting component, which not only realizes the integrated packaging of the integrated electric chip 1 and the semiconductor laser emitter 6, but also reduces the packaging size of the optoelectronic package structure.

[0112] The manufacturing method of the optoelectronic package structure of this embodiment is to obtain a single electric chip unit 11 with a stepped side wall by slicing the integrated electric chip 1, and form the reflective portion 21 on at least one side wall of the electric chip unit 11 to obtain the reflective chip structure 2, wherein the inclined surface in the stepped side wall of the electric chip unit 11 serves as the reflective surface, and the outgoing light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflective portion 21 located on the side wall of the electric chip unit 11, without the need to set up an additional reflective component, which not only realizes the integrated packaging of the integrated electric chip 1 and the semiconductor laser emitter 6, but also reduces the packaging size of the optoelectronic package structure.

[0113] Example 3

[0114] This embodiment provides a third method for manufacturing an optoelectronic package structure, please refer to Figures 19 to 25. The method for manufacturing the optoelectronic package structure described in this embodiment is improved based on the method for manufacturing the optoelectronic package structure described in Example 1, and forming the reflective chip structure 2 includes the following steps: forming a plurality of grooves 13 in the integrated electronic chip 1, forming a filling layer 14 in the grooves 13 and slicing the filling layer 14 to obtain a single electronic chip unit 11, forming the reflective portion 21 on at least one side wall of the electronic chip unit 11 to obtain the reflective chip structure 2, wherein the side wall of the filling layer 14 after slicing serves as the reflective surface.

[0115] Specifically, as shown in FIG19 , which is a schematic structural diagram after the groove 13 is formed, the method of forming the groove 13 includes half-cutting or other suitable methods.

[0116] Specifically, the depth of the groove 13 can be selected according to actual conditions while meeting the performance of the optoelectronic package structure, and is not limited here. The depth here refers to the vertical distance between the top of the groove 13 and the bottom of the groove 13.

[0117] Specifically, the filling layer 14 is made of epoxy resin or other suitable materials.

[0118] Specifically, as shown in FIG20 , which is a schematic structural diagram of the filling layer 14 after it is formed, the method of forming the filling layer 14 includes chemical vapor deposition, physical vapor deposition or other suitable methods.

[0119] Specifically, as shown in FIG21 , it is a schematic structural diagram of the filling layer 14 after slicing. The method of slicing the filling layer 14 includes cutting, patterning or other suitable methods.

[0120] As an example, as shown in FIG22 , it is a schematic diagram of a third structure after the reflection part 21 is formed. The method of forming the reflection part 21 includes sputtering, coating or other suitable methods.

[0121] Specifically, the reflective portion 21 is formed to cover the exposed surface of the filling layer 13 .

[0122] Specifically, as shown in Figures 23-25, they are respectively schematic diagrams of the third structure after forming the bottom filling glue 8, the third structure after forming the protective shell 7, and the third structure after forming the light-transmitting component 9. The formation of the reflective chip structure 2, the electrical connection between the semiconductor edge-emitting laser 6 and the substrate 5, and the subsequent formation of the bottom filling glue 8, the protective shell 7, and the light-transmitting component 9 can refer to Example 1 and will not be repeated here.

[0123] Specifically, a plurality of grooves 13 are formed in the integrated electric chip 1, a filling layer 14 is formed in the groove 13, and the filling layer 14 is diced to obtain a single electric chip unit 11, and the reflecting portion 21 is formed on at least one side wall of the electric chip unit 11 to obtain the reflecting chip structure 2, wherein the side wall of the filling layer 14 after dicing serves as the reflecting surface. By forming the filling layer 14, the risk of generating fragments of the integrated electric chip 1 during dicing is avoided, and the outgoing light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflecting portion 21, and there is no need to set up an additional reflecting component, which not only realizes the integrated packaging of the integrated electric chip 1 and the semiconductor laser emitter 6, but also reduces the packaging size of the optoelectronic package structure.

[0124] The manufacturing method of the optoelectronic package structure of this embodiment is through forming a plurality of the grooves 13 in the integrated electric chip 1, forming the filling layer 14 in the grooves 13 and slicing the filling layer 14 to obtain a single electric chip unit 11, forming the reflecting portion 21 on at least one side wall of the electric chip unit 11 to obtain the reflective chip structure 2, wherein the side wall of the filling layer 14 after slicing serves as the reflecting surface. By forming the filling layer 14, the risk of generating fragments when the integrated electric chip 1 is slicing is avoided. The outgoing light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflecting portion 21, and there is no need to set up an additional reflecting component. Not only does it realize the integrated packaging of the integrated electric chip 1 and the semiconductor laser emitter 6, but it also reduces the packaging size of the optoelectronic package structure.

[0125] Example 4

[0126] This embodiment provides a fourth method for manufacturing an optoelectronic package structure, please refer to Figures 26 to 28. The method for manufacturing the optoelectronic package structure described in this embodiment is improved based on the method for manufacturing the optoelectronic package structure described in Example 1. Forming the reflective chip structure 2 includes the following steps: dicing the integrated electric chip 1 to obtain a single electric chip unit 11, forming an adhesion layer 10 on the upper surface of the electric chip unit 11, and adhering the reflective part 21 to the top of the electric chip unit 11 to obtain the reflective chip structure 2, wherein the side wall of the reflective part 21 serves as the reflective surface.

[0127] Specifically, the method of dicing the plurality of electrical chip units 11 in the integrated electrical chip 1 includes laser cutting or other suitable methods.

[0128] As an example, as shown in Figures 26 and 27, they are respectively schematic diagrams of the structure after the semiconductor edge-emitting laser 6 is electrically connected to the substrate 5 and a fourth schematic diagram of the structure after the bottom filling glue 8 is formed. The method of forming the reflecting part 21 includes mold molding or other suitable methods.

[0129] Specifically, the reflective portion 21 is fixed above the electrical chip unit 11 .

[0130] Specifically, the reflecting portion 21 further includes a reflecting grating.

[0131] Specifically, as shown in Figure 27, which is a schematic diagram of the fourth structure after the light-transmitting component 9 is formed, the reflective chip structure 2, the semiconductor edge-emitting laser 6 and the substrate 5 are electrically connected and the bottom filling glue 8, the protective shell 7 and the light-transmitting component 9 are subsequently formed. Please refer to Example 1 and will not repeat them here.

[0132] Specifically, by slicing the integrated electronic chip 1, forming an adhesion layer 10 on the upper surface of the electronic chip unit 11, and adhering the reflection part 21 to the top of the electronic chip unit 11, the reflection chip structure 2 can be obtained, which broadens the process idea of ​​forming the reflection chip structure. The side wall of the reflection part 21 serves as the reflection surface, and the outgoing light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflection part 21. There is no need to set up additional reflection components, which reduces the packaging size of the optoelectronic package structure.

[0133] The manufacturing method of the optoelectronic package of this embodiment is to form an adhesion layer 10 on the upper surface of the electronic chip unit 11 by slicing the integrated electronic chip 1, and adhering the reflective part 21 to the top of the electronic chip unit 11 to obtain the reflective chip structure 2, which broadens the process concept of forming the reflective chip structure. The side wall of the reflective part 21 is at a preset angle to the bottom surface of the reflective part 21. The outgoing light of the semiconductor edge-emitting laser 6 is directly reflected by the reflective part 21 to the light-transmitting component 9, and no additional reflective component is required, thereby reducing the packaging size of the optoelectronic package structure.

[0134] Example 5

[0135] This embodiment provides an optoelectronic package structure, which is manufactured using the method for manufacturing the optoelectronic package structure described in any one of the first to fourth embodiments.

[0136] Specifically, as shown in Figures 12, 18, 25, 28 and 29, they are respectively a structural schematic diagram after forming the light-transmitting component 9, another structural schematic diagram after forming the light-transmitting component 9, a third structural schematic diagram after forming the light-transmitting component 9, a fourth structural schematic diagram after forming the light-transmitting component 9 and a top view of a partial structure of the optoelectronic package structure, wherein the optoelectronic package structure includes: a substrate 5; a reflective chip structure 2, electrically connected to the substrate 5, the reflective chip structure 2 includes an electric chip unit 11 having a reflective portion 21 attached to at least one sidewall thereof, and the reflective surface of the reflective portion 21 is connected to the reflective surface of the reflective portion 21. The bottom surface of the electric chip unit 11 is at a preset angle; the semiconductor edge-emitting laser 6 is electrically connected to the substrate 5, and the semiconductor edge-emitting laser 6 surrounds the reflective chip structure 2 and is separated from the reflective chip structure 2 by a first preset distance; the protective shell 7 is arranged above the substrate 5 and surrounds the semiconductor edge-emitting laser 6 and the reflective chip structure 2, and the protective shell 7 is separated from the side of the semiconductor edge-emitting laser 6 away from the reflective chip structure 2 by a second preset distance, and a light outlet 73 is formed above the protective shell 7; the light-transmitting component 9 is arranged above the protective shell 7 and covers the light outlet 73.

[0137] Specifically, a plurality of pads 51 are provided in the substrate 5 , the reflective chip structure 2 is electrically connected to the substrate 5 via the pads 51 , and the semiconductor edge-emitting laser 6 is electrically connected to the substrate 5 via the pads 51 .

[0138] Specifically, the emitted light of the semiconductor edge-emitting laser 6 is reflected out of the light-transmitting component 9 through the reflective portion 21 in the reflective chip structure 2 .

[0139] The optoelectronic package of this embodiment realizes the integrated packaging of the integrated electronic chip 1 and the semiconductor laser emitter 6. The emitted light of the semiconductor edge-emitting laser 6 is directly reflected out of the light-transmitting component 9 through the reflecting portion 21. No additional reflecting component is required, thereby reducing the size of the optoelectronic package structure.

[0140] In summary, the optoelectronic package structure and its manufacturing method of the present invention utilize an electronic chip unit having a reflective portion attached to at least one sidewall as a reflective chip structure, wherein the reflective surface of the reflective portion forms a predetermined angle with the bottom surface of the electronic chip unit. The reflective surface of the reflective portion is located in the optical path of the output light of the semiconductor edge-emitting laser. The output light of the semiconductor edge-emitting laser is directly reflected by the reflective portion out of the light-transmitting component, eliminating the need for an additional reflective component. Thus, the optoelectronic package structure of the present invention not only achieves the integrated packaging of the integrated electronic chip and the semiconductor laser chip, but also reduces the package size of the optoelectronic package structure. Furthermore, the light-transmitting component is attached to the protective shell via a protrusion on the protective shell, preventing the light-transmitting component from slipping. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has high industrial application value.

[0141] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A manufacturing method of an optoelectronic package structure, characterized in that, Including the following steps: Providing an integrated circuit chip including a plurality of electric chip units, forming a plurality of reflective chip structures based on the integrated circuit chip, the reflective chip structures being single electric chip units with a reflective part attached to at least one side wall, and a reflection surface of the reflective part being at a preset angle with a bottom surface of the electric chip unit; Providing a substrate and electrically connecting the reflective chip structures to the substrate; Providing at least one semiconductor edge-emitting laser and electrically connecting the semiconductor edge-emitting laser to the substrate, the semiconductor edge-emitting laser being spaced from the reflective chip structures by a first preset distance, and the reflection surface of the reflective part being located on an optical path of light emitted by the semiconductor edge-emitting laser; Forming a protective shell surrounding the semiconductor edge-emitting laser and the reflective chip structures above the substrate, the protective shell being spaced from a side of the semiconductor edge-emitting laser away from the reflective chip structures by a second preset distance, and an optical outlet being provided above the protective shell; Forming a light-transmitting component covering the optical outlet above the protective shell.

2. The manufacturing method of the optoelectronic package structure according to claim 1, wherein: Forming the reflective chip structures includes the following steps: dicing the integrated circuit chip to obtain single electric chip units with single-sloped side walls, and forming the reflective part on at least one side wall of the electric chip units to obtain the reflective chip structures, wherein the single-sloped side walls of the electric chip units serve as the reflection surfaces.

3. The manufacturing method of the optoelectronic package structure according to claim 1, characterized in that: Forming the reflective chip structures includes the following steps: dicing the integrated circuit chip to obtain single electric chip units with stepped side walls, and forming the reflective part on at least one side wall of the electric chip units to obtain the reflective chip structures, wherein the stepped side walls of the electric chip units include vertical surfaces and inclined surfaces, and the inclined surfaces serve as the reflection surfaces.

4. The manufacturing method of the optoelectronic package structure according to claim 1, characterized in that: Forming the reflective chip structures includes the following steps: forming a plurality of grooves in the integrated circuit chip, forming a filling layer in the grooves and dicing the filling layer to obtain single electric chip units, and forming the reflective part on at least one side wall of the electric chip units to obtain the reflective chip structures, wherein side walls of the filling layer after dicing serve as the reflection surfaces.

5. The manufacturing method of the optoelectronic package structure according to claim 1, characterized in that: Dicing the integrated circuit chip to obtain single electric chip units, forming an adhesion layer on upper surfaces of the electric chip units, and adhering the reflective parts above the electric chip units to obtain the reflective chip structures, wherein side walls of the reflective parts serve as the reflection surfaces.

6. The manufacturing method of the optoelectronic package structure according to claim 1, characterized in that: Methods for forming the reflective parts include sputtering, coating, and molding with a mold.

7. The manufacturing method of the optoelectronic package structure according to claim 1, wherein: The reflective parts include highly reflective metal layers and composite layers thereof.

8. The manufacturing method of the optoelectronic package structure according to claim 1, wherein: The semiconductor edge-emitting lasers include laser diodes and semiconductor laser chips.

9. The manufacturing method of the optoelectronic package structure according to claim 1, wherein: A plurality of pads are provided in the substrate, the reflective chip structures are electrically connected to the substrate through the pads, and the semiconductor edge-emitting lasers are electrically connected to the substrate through the pads.

10. The manufacturing method of the optoelectronic package structure according to claim 1, characterized in that: After electrically connecting the semiconductor edge-emitting lasers to the substrate and before forming the protective shell, it further includes a step of forming underfill glue under the semiconductor edge-emitting lasers and the reflective chip structures.

11. The manufacturing method of the optoelectronic package structure according to claim 1, wherein: The protective case is provided with a protruding portion, and the light-transmitting component is arranged above the protective case through the protruding portion.

12. An optoelectronic package structure, characterized in that, The optoelectronic package structure is fabricated by using the manufacturing method of the optoelectronic package structure according to any one of claims 1 to 11.

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