Plasma processing device

Abstract

The present invention provides a plasma processing device in which wear and tear of components in a chamber has a reduced effect on plasma processing of substrates. The plasma processing device comprises: a chamber; a substrate support part; an edge ring; an upper electrode; a first gas supply part; an RF power source; a DC power source configured to apply a DC voltage to the edge ring; a first counter configured to count a first time according to the operating time of the RF power source and to reset the first time upon replacement of the upper electrode; a second counter configured to count a second time according to the operating time of the RF power source and to reset the second time upon replacement of the edge ring; a first processing unit configured to incrementally change the RF power and / or a first gas depending on the first time; and a second processing unit configured to incrementally change the DC voltage depending on the second time.

Description

Plasma processing equipment

[0001] SUMMARY OF THE INVENTION An exemplary embodiment of the present disclosure relates to a plasma processing apparatus.

[0002] A technique for suppressing the change over time in the tilting shape that occurs in the edge region of a substrate is disclosed in Japanese Patent Laid-Open No. 2003-222999.

[0003] Japanese Patent Application Laid-Open No. 2021-39924

[0004] The present disclosure provides a technique for reducing the influence of wear on components in a chamber of a plasma processing apparatus on plasma processing of a substrate.

[0005] a first gas supply unit configured to supply a first gas into the chamber; an RF power supply configured to supply RF power to the upper electrode or the lower electrode to generate plasma from the first gas in the chamber; a DC power supply configured to apply a DC voltage to the edge ring; a first counter configured to count a first time according to an operation time of the RF power supply and to reset the first time by replacing the upper electrode; a second counter configured to count a second time according to an operation time of the RF power supply and to reset the second time by replacing the edge ring; a first processing unit configured to gradually change at least one of the RF power and the first gas according to the first time; and a second processing unit configured to gradually change the DC voltage according to the second time.

[0006] According to one exemplary embodiment of the present disclosure, a technique can be provided that can reduce the influence of wear on components in a chamber of a plasma processing apparatus on plasma processing of a substrate.

[0007] FIG. 1 is a diagram for explaining an example of the configuration of a plasma processing system. FIG. 1 is a diagram for explaining an example of the configuration of a plasma processing apparatus according to a first embodiment. FIG. 2 is a diagram for explaining an example of the configuration of a control unit. FIG. 3 is a diagram for explaining an example of a replacement period of an upper electrode and an edge ring and a count time. FIG. 4 is a diagram for explaining an example of an example of changing RF power stepwise according to a first time. FIG. 5 is a diagram for explaining an example of changing a flow rate of a first gas stepwise according to a first time. FIG. 6 is a diagram for explaining an example of changing a DC voltage stepwise according to a second time. FIG. 7 is a diagram for explaining an example of the configuration of a plasma processing apparatus according to a second embodiment. FIG. 8 is a diagram for explaining an example of the configuration of a control unit. FIG. 9 is a diagram for explaining an example of a replacement period of an upper electrode, an edge ring, and an upper annular member and a count time. FIG. 10 is a diagram for explaining an example of changing a flow rate of a second gas stepwise according to a third time. FIG. 11 is a diagram for explaining an example of changing a first power value and a second power value stepwise according to a third time.

[0008] Hereinafter, each embodiment of the present disclosure will be described.

[0009] In one exemplary embodiment, a plasma processing apparatus is provided, comprising: a chamber; a substrate support disposed within the chamber, the substrate support including a lower electrode; an edge ring disposed to surround a substrate on the substrate support; an upper electrode disposed above the substrate support; a first gas supply configured to supply a first gas into the chamber; an RF power supply configured to supply RF power to the upper electrode or the lower electrode to generate plasma from the first gas in the chamber; a DC power supply configured to apply a DC voltage to the edge ring; a first counter configured to count a first time period according to an operation time of the RF power supply and to reset the first time period upon replacement of the upper electrode; a second counter configured to count a second time period according to an operation time of the RF power supply and to reset the second time period upon replacement of the edge ring; a first processing unit configured to gradually change at least one of the RF power and the first gas according to the first time period; and a second processing unit configured to gradually change the DC voltage according to the second time period.

[0010] In one exemplary embodiment, the replacement period of the edge ring is different from the replacement period of the top electrode.

[0011] In one exemplary embodiment, the first processing unit is configured to incrementally increase the RF power according to a first time period, and the second processing unit is configured to incrementally increase the DC voltage according to a second time period.

[0012] In one exemplary embodiment, the first processing unit is configured to gradually decrease the flow rate of the first gas according to a first time period.

[0013] In one exemplary embodiment, the plasma processing apparatus further includes a second gas supply unit, wherein the upper electrode has a central region and an annular region in a plan view, the first gas supply unit is configured to supply a first gas into the chamber via the central region, and the second gas supply unit is configured to supply a second gas into the chamber via the annular region.

[0014] In one exemplary embodiment, the plasma processing apparatus further includes an annular member arranged to surround the upper electrode or the edge ring, a third counter configured to count a third time period according to the operation time of the RF power supply and to reset the third time period by replacing the annular member, and a third processing unit configured to gradually change the flow rate of the second gas according to the third time period.

[0015] In one exemplary embodiment, the plasma processing apparatus further includes an annular member arranged to surround the upper electrode and a third counter configured to count a third time according to an operation time of the RF power supply and to reset the third time by replacing the annular member, and the first processing unit is configured to gradually change the RF power according to the first time and the third time.

[0016] In one exemplary embodiment, the first processing unit is configured to add a first power value corresponding to a first time period and a second power value corresponding to a third time period to a power level of the RF power.

[0017] In one exemplary embodiment, the first processing unit is configured to add a first power value to the power level of the RF power step by step in a first interval, and to add a second power value different from the first power value to the power level of the RF power step by step in a second interval.

[0018] In one exemplary embodiment, the first processing unit is configured to maintain a constant power level during the third interval.

[0019] In one exemplary embodiment, the second processing unit is configured to add a first voltage value to the voltage level of the DC voltage in each step in the first interval, and to add a second voltage value different from the first voltage value to the voltage level of the DC voltage in each step in the second interval.

[0020] In one exemplary embodiment, the second processing unit is configured to maintain a constant voltage level during the third interval.

[0021] In one exemplary embodiment, the first processing unit is configured to subtract a first flow rate value from the flow rate of the first gas in each step in a first section, and to subtract a second flow rate value different from the first flow rate value from the flow rate of the first gas in each step in a second section.

[0022] In one exemplary embodiment, the first treatment section is configured to maintain a constant flow rate in the third section.

[0023] In one exemplary embodiment, there is provided a plasma processing apparatus including: a chamber; an RF power supply configured to generate RF power to generate a plasma in the chamber; a first consumable part disposed in the chamber; a second consumable part disposed in the chamber; a first counter configured to count a first time period according to an operating time of the RF power supply and to reset the first time period upon replacement of the first consumable part; a second counter configured to count a second time period according to an operating time of the RF power supply and to reset the second time period upon replacement of the second consumable part; a first processing unit configured to gradually change a first process parameter according to the first time period; and a second processing unit configured to gradually change a second process parameter according to the second time period.

[0024] In one exemplary embodiment, the replacement period of the first consumable part is different from the replacement period of the second consumable part.

[0025] In one exemplary embodiment, the plasma processing apparatus further includes a third consumable part disposed in the chamber, and a third counter configured to count a third time according to an operating time of the RF power supply and to reset the third time upon replacement of the third consumable part, and the first processing unit is configured to add or subtract a first value according to the first time and a second value according to the third time to or from the first process parameter.

[0026] In one exemplary embodiment, the first processing unit is configured to add or subtract a first value to the first process parameter for each step in a first interval, and to add or subtract a second value to the first process parameter for each step in a second interval.

[0027] In one exemplary embodiment, the second processing unit is configured to add or subtract a first value to the second process parameter for each step in the first interval, and to add or subtract a second value to the second process parameter for each step in the second interval.

[0028] In one exemplary embodiment, there is provided a plasma processing apparatus comprising: a chamber; an RF power supply configured to generate RF power to generate plasma in the chamber; a consumable part disposed in the chamber; a counter configured to count a first time period according to an operating time of the RF power supply and to reset the first time period upon replacement of the consumable part; and a processing unit configured to change a first process parameter in stages according to the first time period, wherein the processing unit is configured to add or subtract a first value to or from the first process parameter in each stage during a first interval, and to add or subtract a second value to or from the first process parameter in each stage during a second interval.

[0029] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are designated by the same reference numerals, and redundant explanations will be omitted. Unless otherwise specified, the positional relationships, such as up, down, left, and right, will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0030] First Embodiment <Example of Plasma Processing System> FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0031] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma generated in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0032] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0033] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0034] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10 (also simply referred to as the "chamber"), a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0035] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0036] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0037] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0038] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0039] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0040] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0041] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0042] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0043] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 100 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0044] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0045] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0046] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0047] In the plasma processing apparatus 1 described above, the ring assembly 112 includes an edge ring 112a and a cover ring 112b. In one embodiment, the cover ring 112b is disposed to surround the periphery of the edge ring 112a. In one embodiment, the plasma processing apparatus 1 includes a DC power supply 200 configured to apply a DC voltage to the edge ring 112a. The DC power supply 200 may be included in the power supply 30. The DC power supply 200 includes a DC generator 200a. In one embodiment, the DC generator 200a is electrically connected to the edge ring 112a via at least one conductive member and configured to generate a DC signal. The DC signal may be pulsed, similar to the first and second DC signals described above. The generated DC signal is applied to the edge ring 112a via at least one conductive member.

[0048] 3 , in one embodiment, the plasma processing apparatus 1 further includes a first counter 250, a second counter 251, a first processing unit 252, and a second processing unit 253. The first counter 250, the second counter 251, the first processing unit 252, and the second processing unit 253 may be included in the control unit 2.

[0049] As shown in FIG. 4 , the first counter 250 is configured to count a first time t1 according to the operation time (operation time) of the RF power supply 31 and to reset the first time t1 when the upper electrode 13d of the showerhead 13 is replaced. That is, the first time t1 of the first counter 250 is reset every time the upper electrode 13d is replaced, and thereafter, counting begins from a reference value according to the operation time of the RF power supply 31. The reference value may be zero. The operation time of the RF power supply 31 may be acquired in various ways. For example, the operation time of the RF power supply 31 may be acquired by a timer built into the RF power supply 31. That is, the operation time of the RF power supply 31 can also be considered as the time during which the RF power supply 31 supplies RF power to the upper electrode 13d or the lower electrode to generate plasma from the first gas in the chamber 10.

[0050] The second counter 251 is configured to count a second time t2 according to the operation time of the RF power supply 31 and to reset the second time t2 when the edge ring 112a is replaced. That is, the second time t2 of the second counter 251 is reset every time the edge ring 112a is replaced, and thereafter, counting begins from a reference value according to the operation time of the RF power supply 31. The reference value may be zero.

[0051] The replacement period N2 of the edge ring 112a is different from the replacement period N1 of the upper electrode 13d. In one embodiment, the replacement period N2 of the edge ring 112a is shorter than the replacement period N1 of the upper electrode 13d. In this case, the second time t2 counted by the second counter 251 is reset at intervals shorter than the first time t1 counted by the first counter 250.

[0052] In one embodiment, the first processing unit 252 is configured to gradually change at least one of the RF power supplied to the upper electrode 13d or the lower electrode by the RF power supply 31 and the flow rate of the first gas supplied to the chamber 10 by the gas supply unit 20 according to the first time t1.

[0053] In the example shown in FIG. 5 , the first processing unit 252 is configured to increase the RF power Prf stepwise according to the first time t1. Specifically, the first processing unit 252 is configured to add a first power value Δp1 to the power level of the RF power Prf for each step in the first interval S1. The first processing unit 252 is configured to add a second power value Δp2, which is different from the first power value Δp1, to the power level of the RF power Prf for each step in the second interval S2. The first processing unit 252 is configured to maintain a constant power level in the third interval S3. In each interval S1 to S3, the power values ​​Δp1 and Δp2 to be increased stepwise, the time (length) of each step Δt1-1, Δt1-2, and Δt1-3, and the number of steps may be set, respectively. The total time of intervals S1 to S3 may be the replacement period N1 of the upper electrode 13d. The number of sections is not limited to three, but may be one or two, or may be four or more.

[0054] 6, the first processing unit 252 is configured to reduce the flow rate F1 of the first gas in stages according to the first time t1. Specifically, the first processing unit 252 is configured to subtract a first flow rate value Δf1-1 from the flow rate F1 of the first gas in each stage in the first section S4. The first processing unit 252 is configured to subtract a second flow rate value Δf1-2, which is different from the first flow rate value Δf1-1, from the flow rate F1 of the first gas in each stage in the second section S5. The first processing unit 252 is configured to maintain a constant flow rate in the third section S6. In each of the sections S4 to S6, the flow rate values ​​Δf1-1 and Δf1-2 to be subtracted in each stage, the times (lengths) of each stage Δt1-1, Δt1-2, and Δt1-3, and the number of stages may be set. The total time of the sections S4 to S6 may be the replacement period N1 of the upper electrode 13d. The number of sections is not limited to three, and may be one, two, or four or more.

[0055] In one embodiment, the second processing unit 253 is configured to change the DC voltage applied to the edge ring 112a by the DC power supply 200 in a stepwise manner according to the second time t2.

[0056] In the example shown in FIG. 7 , the second processing unit 253 is configured to increase the DC voltage Vdc stepwise according to the second time t2. Specifically, the second processing unit 253 is configured to add a first voltage value Δv1 to the voltage level of the DC voltage Vdc stepwise in the first section S7. The second processing unit 253 is configured to add a second voltage value Δv2, which is different from the first voltage value Δv1, to the voltage level of the DC voltage Vdc stepwise in the second section S8. The second processing unit 253 is configured to maintain a constant voltage level in the third section S9. The voltage values ​​Δv1 and Δv2 that increase stepwise in each section S7 to S9, the time (length) of each step Δt2-1, Δt2-2, and Δt2-3, and the number of steps may be set individually for each section S7 to S9. The total time of sections S7 to S9 may be the replacement cycle N2 of the edge ring 112a. The number of sections is not limited to three, but may be one or two, or may be four or more.

[0057] <Example of Plasma Processing Method> The plasma processing method includes an etching process that uses plasma to etch a film on a substrate W. In one embodiment, the plasma processing method is performed by the control unit 2 in the plasma processing apparatus 1.

[0058] First, the substrate W is carried into the chamber 10 by the transport arm, placed on the substrate support 11 by the lifter, and held by suction on the substrate support 11 as shown in FIG.

[0059] Next, plasma is generated in the plasma processing space 10s by the plasma generation unit 12. First, a processing gas is supplied to the shower head 13 by the gas supply unit 20, and then supplied from the shower head 13 to the plasma processing space 10s. The processing gas supplied at this time includes a gas that generates activated species necessary for etching the substrate W. The processing gas includes a first gas.

[0060] RF power is supplied to the upper electrode 13d and / or the lower electrode 112a from the RF power supply 31. DC voltage is applied to the edge ring 112a from the DC power supply 200. The atmosphere in the plasma processing space 10s is exhausted through the gas exhaust port 10e, and the pressure inside the plasma processing space 10s is reduced. Plasma is generated from the processing gas on the substrate support 11 in the plasma processing space 10s, and the substrate W is etched.

[0061] In the plasma processing apparatus 1, the above-described etching process is continuously performed on multiple substrates. This continuous etching process may include processes using the same recipe as well as processes using different recipes. The first counter 250 counts the first time t1 according to the operating time of the RF power supply 31. In one embodiment, the first counter 250 counts the time during which the RF power supply 31 supplies RF power to the upper electrode 13d or the lower electrode as the first time t1. As shown in FIG. 4 , when the first time t1 reaches the replacement period N1, the upper electrode 13d is replaced with a new one. At this time, the first time t1 is reset (to a reference value), and counting of the first time t1 is restarted from the reference value for the new upper electrode 13d. The reference value may be zero.

[0062] As shown in FIG. 5 , the first processing unit 252 gradually increases the RF power Prf supplied to the upper electrode 13d or the lower electrode 13d by the RF power supply 31 according to the first time t1. That is, the RF power Prf gradually increases as the usage time (time exposed to plasma) of the upper electrode 13d in the plasma processing increases. In this case, in each of the sections S1 to S3, the power value Δp1, Δp2, the time (length) of each step Δt1-1, Δt1-2, Δt1-3, and the number of steps may be set. The power value, the time of each step, and the number of steps may decrease as the first time t1 progresses (as sections S1 to S3 progress). This maintains the density of the plasma generated in the chamber 10 within a predetermined range, even as the upper electrode 13d gradually wears out. As a result, the line width (CD) of the film to be etched during the etching process is maintained within an appropriate range.

[0063] As shown in FIG. 6 , the first processing unit 252 gradually reduces the flow rate F1 of the first gas supplied to the chamber 10 by the gas supply unit 20 according to the first time t1. That is, as the usage time (time exposed to plasma) of the upper electrode 13d in the plasma processing increases, the flow rate F1 of the first gas gradually decreases. In this case, in each of sections S4 to S6, the flow rate values ​​Δf1-1, Δf1-2 to be subtracted for each step, the time (length) of each step Δt1-1, Δt1-2, Δt1-3, and the number of steps may be set. The flow rate value, the time of each step, and the number of steps may decrease as the first time t1 progresses (sections S4 to S6 progress). This allows the line width (CD) of the film to be etched during the etching process to be maintained within an appropriate range, even if the upper electrode 13d gradually wears away.

[0064] The second counter 251 counts the second time t2 according to the operation time of the RF power supply 31. In one embodiment, the second counter 251 counts the time during which the RF power supply 31 supplies RF power to the upper electrode 13d or the lower electrode as the second time t2. Then, as shown in FIG. 4 , when the second time t2 reaches the replacement period N2, the edge ring 112a is replaced with a new one. At this time, the second time t2 is reset (to a reference value), and counting of the second time t2 for the new edge ring 112a is started again from the reference value. The reference value may be zero.

[0065] As shown in FIG. 7 , the second processing unit 253 increases the DC voltage Vdc applied to the edge ring 112a by the DC power supply 200 in stages over the second time t2. That is, the DC voltage Vdc is gradually increased as the usage time (time exposed to plasma) of the edge ring 112a in the plasma processing increases. In this case, the voltage value Δv1, Δv2, the time (length) of each stage Δt2-1, Δt2-2, Δt2-3, and the number of stages may be set for each stage in each of the sections S7 to S9. The voltage value, the time, and the number of stages may decrease as the second time t2 progresses (as the sections S7 to S9 progress). This maintains the sheath tilt at the outer periphery of the substrate W within a predetermined range even as the edge ring 112a gradually wears out. As a result, the tilt angle at the outer periphery of the substrate W during the etching processing is maintained within an appropriate range.

[0066] According to this exemplary embodiment, the plasma processing apparatus 1 includes a first counter 250 configured to count a first time t1 according to the operation time of the RF power supply 31 and reset the first time t1 when the upper electrode 13d is replaced, a second counter 251 configured to count a second time t2 according to the operation time of the RF power supply 31 and reset the second time t2 when the edge ring 112a is replaced, a first processing unit 252 configured to gradually change at least one of the RF power and the flow rate of the first gas according to the first time t1, and a second processing unit 253 configured to gradually change the DC voltage according to the second time t2. This allows the RF power and the process parameters of the first gas to be gradually changed according to the amount of use of the upper electrode 13d since replacement, and the DC voltage process parameter to be gradually changed according to the amount of use of the edge ring 112a since replacement. As a result, the plasma processing apparatus 1 can reduce the influence of wear on components in the chamber 10 on the substrate plasma processing.

[0067] 8, the plasma processing apparatus 1 includes an upper annular member 300 arranged to surround an upper electrode 13d. The upper electrode 13d has a central region 310 and an annular region 311. The plasma processing apparatus 1 shown in FIG. 8 includes a first gas supply unit 350 configured to supply a first gas into the chamber 10 via the central region 310, and a second gas supply unit 351 configured to supply a second gas into the chamber 10 via the annular region 311.

[0068] The upper annular member 300 is electrically insulated from the upper electrode 13d. In one embodiment, the upper annular member 300 is made of a silicon material. The upper annular member 300 is electrically connected to ground potential through the sidewall 10a of the chamber 10.

[0069] The annular region 311 of the upper electrode 13d is disposed to surround the central region 310. The central region 310 and the annular region 311 respectively include the gas supply port 13a, the gas diffusion chamber 13b, and the gas inlet port 13c of the shower head 13. The central region 310 may be disposed to face the central region 111a of the substrate support 11, and the annular region 311 may be disposed to face the ring assembly 112.

[0070] The first gas supply unit 350 and the second gas supply unit 351 may have the same configuration as the gas supply unit 20 described in the first embodiment. The second gas supply unit 351 may include at least one gas source 21 and at least one flow rate controller 22. The first gas supplied by the first gas supply unit 350 and the second gas supplied by the second gas supply unit 351 may be gases that generate plasma. The second gas may contain the same type of gas as the first gas but at a different flow rate ratio.

[0071] 9 , in one embodiment, the plasma processing apparatus 1 may further include a third counter 400 and a third processing unit 401. The third counter 400 and the third processing unit 401 may be included in the control unit 2.

[0072] 10 , the third counter 400 is configured to count a third time t3 according to the operation time of the RF power supply 31, and to reset the third time t3 upon replacement of the upper annular member 300. That is, the third time t3 of the third counter 400 is reset every time the upper annular member 300 is replaced, and thereafter, counting begins from a reference value according to the operation time of the RF power supply 31. The reference value may be zero.

[0073] The replacement period N3 of the upper annular member 300 is different from the replacement period N1 of the upper electrode 13 d and the replacement period N2 of the edge ring 112 a. In one embodiment, the replacement period N3 of the upper annular member 300 is longer than the replacement period N1 of the upper electrode 13 d and the replacement period N2 of the edge ring 112 a. In this case, the third time t3 counted by the third counter 400 is reset at intervals longer than the first time t1 counted by the first counter 250 and the second time t2 counted by the second counter 251.

[0074] In one embodiment, the third processing unit 401 is configured to change the flow rate of the second gas supplied to the chamber 10 by the second gas supply unit 351 in a stepwise manner according to the third time t3.

[0075] 11 , the third processing unit 401 is configured to reduce the flow rate F2 of the second gas in stages according to a third time t3. Specifically, the third processing unit 401 is configured to subtract a first flow rate value Δf2-1 from the flow rate F2 of the second gas in each stage in the first section S10. The third processing unit 401 is configured to subtract a second flow rate value Δf2-2, which is different from the first flow rate value Δf2-1, from the flow rate F2 of the second gas in each stage in the second section S11. The third processing unit 401 is configured to maintain a constant flow rate in the third section S12. In each of the sections S10 to S12, the flow rate values ​​Δf2-1 and Δf2-2 to be subtracted in each stage, the times (lengths) of each stage Δt3-1, Δt3-2, and Δt3-3, and the number of stages may be set. The total time for sections S10 to S12 may be the replacement cycle N3 for the upper annular member 300. The number of sections is not limited to three, but may be one, two, or four or more. Other configurations of the plasma processing apparatus 1 in the second embodiment may be similar to those of the first embodiment.

[0076] In the plasma processing apparatus 1, etching processing is continuously performed on multiple substrates, as in the first embodiment. During this process, the third counter 400 counts a third time t3 in accordance with the operating time of the RF power supply 31. The third counter 400 counts the time during which the RF power supply 31 supplies RF power to the upper electrode 13d or the lower electrode as the third time t3. Then, as shown in FIG. 10 , when the third time t3 reaches the replacement period N3, the upper annular member 300 is replaced with a new one. At this time, the third time t3 is reset (to a reference value), and counting of the third time t3 is restarted from the reference value for the new upper annular member 300. The reference value may be zero.

[0077] As shown in FIG. 11 , the third processing unit 401 gradually reduces the flow rate F2 of the second gas supplied to the chamber 10 by the second gas supply unit 351 over a third time t3. That is, as the usage time (time exposed to plasma) of the upper annular member 300 in the plasma processing increases, the flow rate F2 of the second gas gradually decreases. In this case, in each of the sections S10 to S12, the flow rate values ​​Δf2-1, Δf2-2 to be subtracted for each step, the time (length) of each step Δt3-1, Δt3-2, Δt3-3, and the number of steps may be set. The flow rate value, the time of each step, and the number of steps may decrease as the third time t3 progresses (the sections S10 to S12 progress). This allows the line width (CD) of the film to be etched during the etching process to be maintained within an appropriate range, even if the upper annular member 300 gradually wears out.

[0078] The operations of the first counter 250, the second counter 251, the first processing unit 252, and the second processing unit 253 of the plasma processing apparatus 1 may be performed in the same manner as in the first embodiment. That is, the counting of the first time t1 by the first counter 250, the change of the RF power Prf in accordance with the first time t1 by the first processing unit 252, and the change of the flow rate F1 of the first gas by the first processing unit 252 may be performed in the same manner as in the first embodiment. Furthermore, the counting of the second time t2 by the second counter 251 and the change of the DC voltage Vdc in accordance with the second time t2 by the second processing unit 253 may be performed in the same manner as in the first embodiment.

[0079] In the second embodiment, the third counter 400 resets the third time t3 when the upper annular member 300 is replaced, and the third processing unit 401 changes the flow rate F2 of the second gas in accordance with the usage time of the upper annular member 300 (third time t3). However, the third counter 400 may reset the third time t3 when the cover ring 112b serving as the annular member is replaced, and the third processing unit 401 may change the flow rate F2 of the second gas in accordance with the usage time of the cover ring 112b in plasma processing (third time t3).

[0080] In the second embodiment, the first processing unit 252 may be configured to change the RF power supplied to the upper electrode 13d or the lower electrode by the RF power supply 31 in a stepwise manner according to the first time t1 and the third time t3. That is, the first processing unit 252 may change the RF power in a stepwise manner based on the first time t1 based on the usage time of the upper electrode 13d and the third time t3 based on the usage time of the upper annular member 300.

[0081] In this case, as shown in FIG. 12 , the first processing unit 252 is configured to add a first power value p1 corresponding to the first time t1 and a second power value p2 corresponding to the third time t3 to the power level of the RF power Prf. Here, the first power value p1 increases stepwise depending on the first time t1, and the second power value p2 increases stepwise depending on the third time t3. For example, if the first power value p1 is “p1-a” and the second power value p2 is “p2-a” at a certain time Ta, “p1-a” and “p2-a” may be added to the power level of the RF power Prf. In this example, the RF power can be appropriately adjusted based on the multiple usage times of multiple consumable parts.

[0082] In the first and second embodiments, the first counter 250 resets the first time t1 when the upper electrode 13d is replaced and counts the usage time of the upper electrode 13d. However, the first counter 250 may be reset when a first consumable part other than the upper electrode 13d is replaced and counts the usage time of the other first consumable part. The second counter resets the second time t2 when the edge ring 112a is replaced and counts the usage time of the edge ring 112a. However, the second counter may be reset when a second consumable part other than the edge ring 112a is replaced and counts the usage time of the other second consumable part. The third counter resets the third time when the upper annular member 300 or the cover ring 112b is replaced and counts the usage time of the upper electrode 13d. However, the third counter may be reset when a third consumable part other than the upper annular member 300 or the cover ring 112b is replaced and counts the usage time of the other third consumable part. In the above embodiment, the processing unit changes the RF power, the DC voltage, the flow rate of the first gas, and the flow rate of the second gas in accordance with the time counted by the counter, but other process parameters may be changed as well, including the bias power supplied to the lower electrode, the pulsed voltage applied to the lower electrode, the temperature of the substrate support or the substrate, the DC voltage applied to the upper electrode, etc.

[0083] The number of counters configured to count time according to the operating time of the RF power supply, such as the first to third counters 250, 251, and 400, and to reset the time when a consumable part is replaced, and the number of processing units configured to gradually change process parameters according to the time counted by the counter, such as the first to third processing units 252, 253, and 401, may be one or four or more.

[0084] When the processor changes the process parameter stepwise in accordance with the time counted by the counter, the number of intervals may be one, two, three, four or more. In each interval, the value to be added to or subtracted from the process parameter for each step may be manually input and set in the processor. The number of intervals and the time (length) of each interval may be manually input and set in the processor.

[0085] In the above embodiments, the usage time of the consumable parts is counted in accordance with the operating time of the RF power supply, and the process parameters are changed in accordance with the usage time, but the number of processed substrates may be counted, and the process parameters may be changed in accordance with the processed number. That is, the first counter may be configured to count a first number of processed substrates in accordance with the operating time of the RF power supply, and the first number of processed substrates may be reset upon replacement of the first consumable part, the second counter may be configured to count a second number of processed substrates in accordance with the operating time of the RF power supply, and the second number of processed substrates may be reset upon replacement of the second consumable part, the first processing unit may be configured to change the first process parameters in stages in accordance with the first number of processed substrates, and the second processing unit may be configured to change the second process parameters in stages in accordance with the second number of processed substrates.

[0086] In the above embodiments, the plasma processing apparatus is not limited to a capacitively coupled plasma processing apparatus, but may be another type of plasma processing apparatus, such as a plasma processing apparatus that generates an inductively coupled plasma, a plasma processing apparatus that generates an ECR plasma, a plasma processing apparatus that generates a helicon wave excited plasma, or a plasma processing apparatus that generates a surface wave plasma.

[0087] In the above embodiment, the time is counted according to the operation time of the RF power supply, but this is not limiting. For example, the time may be counted according to various counters built into the plasma processing apparatus 1.

[0088] In the above embodiment, the plasma processing apparatus 1 has been described as an example, but the present invention is not limited thereto. For example, the present invention may also be applied to a substrate processing apparatus that does not use plasma. In this case, the substrate processing apparatus includes a chamber, a first consumable part disposed in the chamber, and a second consumable part disposed in the chamber. The substrate processing apparatus further includes a first counter, a second counter, a first processing unit, and a second processing unit. The first counter is configured to count a first time according to an operating time of the substrate processing apparatus and to reset the first time upon replacement of the first consumable part. The second counter is configured to count a second time according to an operating time of the substrate processing apparatus and to reset the second time upon replacement of the second consumable part. The first processing unit is configured to gradually change a first process parameter according to the first time. The second processing unit is configured to gradually change a second process parameter according to the second time.

[0089] In one embodiment, the substrate processing apparatus includes a chamber and a consumable part disposed within the chamber. The substrate processing apparatus further includes a counter and a processing unit. The counter is configured to count a first time period according to an operating time of the substrate processing apparatus and to reset the first time period upon replacement of the consumable part. The processing unit is configured to change a first process parameter in stages according to the first time period. Specifically, the processing unit is configured to add or subtract a first value to or from the first process parameter for each stage during a first interval, and to add or subtract a second value to or from the first process parameter for each stage during a second interval. The operating time of the substrate processing apparatus can be acquired based on various counters built into the substrate processing apparatus.

[0090] Embodiments of the present disclosure further include the following aspects.

[0091] a first gas supply unit configured to supply a first gas into the chamber; an RF power supply configured to supply RF power to the upper electrode or the lower electrode to generate plasma from the first gas in the chamber; a DC power supply configured to apply a DC voltage to the edge ring; a first counter configured to count a first time period according to an operation time of the RF power supply and to reset the first time period when the upper electrode is replaced; a second counter configured to count a second time period according to an operation time of the RF power supply and to reset the second time period when the edge ring is replaced; a first processing unit configured to gradually change at least one of the RF power and the first gas in accordance with the first time period; and a second processing unit configured to gradually change the DC voltage in accordance with the second time period.

[0092] (Supplementary Note 2) The plasma processing apparatus according to Supplementary Note 1, wherein a replacement cycle of the edge ring is different from a replacement cycle of the upper electrode.

[0093] (Supplementary Note 3) The plasma processing apparatus according to Supplementary Note 1 or 2, wherein the first processing unit is configured to increase the RF power stepwise according to the first time period, and the second processing unit is configured to increase the DC voltage stepwise according to the second time period.

[0094] (Supplementary Note 4) The plasma processing apparatus according to any one of Supplementary Notes 1 to 3, wherein the first processing unit is configured to reduce a flow rate of the first gas in a stepwise manner according to the first time period.

[0095] (Appendix 5) A plasma processing apparatus according to any one of appendices 1 to 4, further comprising a second gas supply unit, wherein the upper electrode has a central region and an annular region in a planar view, the first gas supply unit is configured to supply the first gas into the chamber via the central region, and the second gas supply unit is configured to supply the second gas into the chamber via the annular region.

[0096] (Supplementary Note 6) The plasma processing apparatus according to Supplementary Note 5, further comprising: an annular member arranged to surround the upper electrode or the edge ring; a third counter configured to count a third time according to the operating time of the RF power supply and to reset the third time by replacing the annular member; and a third processing unit configured to gradually change the flow rate of the second gas according to the third time.

[0097] (Supplementary Note 7) The plasma processing apparatus according to any one of Supplementary Notes 1 to 6, further comprising: an annular member arranged to surround the upper electrode; and a third counter configured to count a third time according to an operating time of the RF power supply and to reset the third time by replacing the annular member, wherein the first processing unit is configured to gradually change the RF power according to the first time and the third time.

[0098] (Supplementary Note 8) The plasma processing apparatus according to Supplementary Note 7, wherein the first processing unit is configured to add a first power value corresponding to the first time period and a second power value corresponding to the third time period to a power level of the RF power.

[0099] (Supplementary Note 9) The plasma processing apparatus according to any one of Supplementary Notes 1 to 8, wherein the first processing unit is configured to add a first power value to the power level of the RF power for each step in a first interval, and to add a second power value different from the first power value to the power level of the RF power for each step in a second interval.

[0100] (Supplementary Note 10) The plasma processing apparatus according to Supplementary Note 9, wherein the first processing unit is configured to maintain a constant power level in a third interval.

[0101] (Supplementary Note 11) The plasma processing apparatus according to any one of Supplementary Notes 1 to 10, wherein the second processing unit is configured to add a first voltage value to a voltage level of the DC voltage for each step in a first interval, and to add a second voltage value different from the first voltage value to a voltage level of the DC voltage for each step in a second interval.

[0102] (Supplementary Note 12) The plasma processing apparatus according to Supplementary Note 11, wherein the second processing unit is configured to maintain a constant voltage level in a third section.

[0103] (Supplementary Note 13) The plasma processing apparatus according to any one of Supplementary Notes 1 to 12, wherein the first processing unit is configured to subtract a first flow rate value from the flow rate of the first gas for each stage in a first section, and to subtract a second flow rate value different from the first flow rate value from the flow rate of the first gas for each stage in a second section.

[0104] (Supplementary Note 14) The plasma processing apparatus according to Supplementary Note 13, wherein the first processing section is configured to maintain a constant flow rate in a third section.

[0105] (Supplementary Note 15) A plasma processing apparatus comprising: a chamber; an RF power supply configured to generate RF power to generate plasma in the chamber; a first consumable part disposed in the chamber; a second consumable part disposed in the chamber; a first counter configured to count a first time according to an operating time of the RF power supply and to reset the first time when the first consumable part is replaced; a second counter configured to count a second time according to an operating time of the RF power supply and to reset the second time when the second consumable part is replaced; a first processing unit configured to gradually change a first process parameter according to the first time; and a second processing unit configured to gradually change a second process parameter according to the second time.

[0106] (Supplementary Note 16) The plasma processing apparatus according to Supplementary Note 15, wherein a replacement cycle of the first consumable part is different from a replacement cycle of the second consumable part.

[0107] (Supplementary Note 17) The plasma processing apparatus described in Supplementary Note 15 or 16, further comprising: a third consumable part placed in the chamber; and a third counter configured to count a third time according to an operating time of the RF power supply and to reset the third time by replacing the third consumable part, wherein the first processing unit is configured to add or subtract a first value according to the first time and a second value according to the third time to or from the first process parameter.

[0108] (Supplementary Note 18) The plasma processing apparatus according to any one of Supplementary Notes 15 to 17, wherein the first processing unit is configured to add or subtract a first value to or from the first process parameter for each stage in a first interval, and to add or subtract a second value to or from the first process parameter for each stage in a second interval.

[0109] (Supplementary Note 19) The plasma processing apparatus according to any one of Supplementary Notes 15 to 18, wherein the second processing unit is configured to add or subtract a first value to or from the second process parameter for each stage in a first interval, and to add or subtract a second value to or from the second process parameter for each stage in a second interval.

[0110] (Supplementary Note 20) A plasma processing apparatus comprising: a chamber; an RF power supply configured to generate RF power to generate plasma in the chamber; a consumable part disposed in the chamber; a counter configured to count a first time according to an operating time of the RF power supply and to reset the first time by replacing the consumable part; and a processing unit configured to change a first process parameter in stages according to the first time, wherein the processing unit is configured to add or subtract a first value to or from the first process parameter for each stage in a first interval, and to add or subtract a second value to or from the first process parameter for each stage in a second interval.

[0111] In the exemplary embodiments described above, the plasma processing apparatus may be modified in various ways without departing from the scope and spirit of the present disclosure. For example, some components in one embodiment may be added to other embodiments within the scope of ordinary creativity of a person skilled in the art. Also, some components in one embodiment may be replaced with corresponding components in other embodiments.

[0112] REFERENCE SIGNS LIST 1: plasma processing apparatus, 2: control unit, 10: chamber, 11: substrate support unit, 13d: upper electrode, 20: gas supply unit, 31: RF power supply, 112a: edge ring, 200: DC power supply, 250: first counter, 251: second counter, 252: first processing unit, 253: second processing unit, t1: first time, t2: second time, W: substrate

Claims

1. A plasma processing apparatus comprising: a chamber; a substrate support disposed in the chamber, the substrate support including a lower electrode; an edge ring disposed to surround a substrate on the substrate support; an upper electrode disposed above the substrate support; a first gas supply configured to supply a first gas into the chamber; an RF power supply configured to supply RF power to the upper electrode or the lower electrode to generate plasma from the first gas in the chamber; a DC power supply configured to apply a DC voltage to the edge ring; a first counter configured to count a first time according to an operation time of the RF power supply and reset the first time by replacing the upper electrode; a second counter configured to count a second time according to the operation time of the RF power supply and reset the second time by replacing the edge ring; a first processing unit configured to stepwise change at least one of the RF power and the first gas according to the first time; and a second processing unit configured to stepwise change the DC voltage according to the second time.

2. The plasma processing apparatus according to claim 1, wherein an exchange cycle of the edge ring is different from an exchange cycle of the upper electrode.

3. The plasma processing apparatus according to claim 2, wherein the first processing unit is configured to stepwise increase the RF power according to the first time, and the second processing unit is configured to stepwise increase the DC voltage according to the second time.

4. The plasma processing apparatus according to claim 2, wherein the first processing unit is configured to stepwise decrease a flow rate of the first gas according to the first time.

5. The plasma processing apparatus according to any one of claims 1 to 4, further comprising a second gas supply, wherein the upper electrode has a central region and an annular region in a plan view, the first gas supply is configured to supply the first gas into the chamber through the central region, and the second gas supply is configured to supply a second gas into the chamber through the annular region.

6. An annular member disposed so as to surround the upper electrode or the edge ring; a third counter configured to count a third time according to the operating time of the RF power supply and reset the third time by replacing the annular member; and a third processing unit configured to gradually change the flow rate of the second gas according to the third time. The plasma processing apparatus according to claim 5, further comprising the above components.

7. An annular member disposed so as to surround the upper electrode; a third counter configured to count a third time according to the operating time of the RF power supply and reset the third time by replacing the annular member; and the first processing unit is configured to gradually change the RF power according to the first time and the third time. The plasma processing apparatus according to any one of claims 1 to 4, further comprising the above components.

8. The plasma processing apparatus according to claim 7, wherein the first processing unit is configured to add a first power value corresponding to the first time and a second power value corresponding to the third time to the power level of the RF power.

9. The plasma processing apparatus according to claim 1, wherein the first processing unit is configured to add the first power value to the power level of the RF power step by step in a first section, and add a second power value different from the first power value to the power level of the RF power step by step in a second section.

10. The plasma processing apparatus according to claim 9, wherein the first processing unit is configured to maintain a constant power level in a third section.

11. The plasma processing apparatus according to claim 1, wherein the second processing unit is configured to add the first voltage value to the voltage level of the DC voltage step by step in a first section, and add a second voltage value different from the first voltage value to the voltage level of the DC voltage step by step in a second section.

12. The plasma processing apparatus according to claim 11, wherein the second processing unit is configured to maintain a constant voltage level in a third section.

13. The plasma processing apparatus according to claim 1, wherein the first processing unit is configured to subtract the first flow rate value from the flow rate of the first gas step by step in a first section, and subtract a second flow rate value different from the first flow rate value from the flow rate of the first gas step by step in a second section.

14. The plasma processing apparatus according to claim 13, wherein the first processing unit is configured to maintain a constant flow rate in the third section.

15. A plasma processing apparatus comprising: a chamber; an RF power supply configured to generate RF power for generating plasma in the chamber; a first consumable component disposed in the chamber; a second consumable component disposed in the chamber; a first counter configured to count a first time according to an operation time of the RF power supply and reset the first time by replacing the first consumable component; a second counter configured to count a second time according to the operation time of the RF power supply and reset the second time by replacing the second consumable component; a first processing unit configured to stepwise change a first process parameter according to the first time; and a second processing unit configured to stepwise change a second process parameter according to the second time.

16. The plasma processing apparatus according to claim 15, wherein a replacement cycle of the first consumable component is different from a replacement cycle of the second consumable component.

17. The plasma processing apparatus according to claim 16, further comprising: a third consumable component disposed in the chamber; and a third counter configured to count a third time according to the operation time of the RF power supply and reset the third time by replacing the third consumable component, wherein the first processing unit is configured to add or subtract a first value corresponding to the first time and a second value corresponding to the third time to or from the first process parameter.

18. The plasma processing apparatus according to claim 16, wherein the first processing unit is configured to add or subtract a first value to or from the first process parameter step by step in a first section and add or subtract a second value to or from the first process parameter step by step in a second section.

19. The plasma processing apparatus according to claim 16, wherein the second processing unit is configured to add or subtract a first value to or from the second process parameter step by step in a first section and add or subtract a second value to or from the second process parameter step by step in a second section.

20. A plasma processing apparatus comprising: a chamber; an RF power supply configured to generate RF power for generating plasma in the chamber; a consumable component disposed in the chamber; a counter configured to count a first time according to an operating time of the RF power supply and reset the first time upon replacement of the consumable component; and a processing unit configured to gradually change a first process parameter according to the first time, wherein the processing unit is configured to add or subtract a first value to or from the first process parameter step by step in a first section, and add or subtract a second value to or from the first process parameter step by step in a second section.

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