Transparent display manufacturing method for solving process error and process laminate thereof

Abstract

This transparent display manufacturing method comprises the steps of: forming a metal wiring on a transparent substrate; forming a solder resist on the transparent substrate and the metal wiring; front surface-exposing the solder resist on the front surface of the transparent substrate by using a front mask that blocks light on a wiring open region; rear surface-exposing the solder resist on the rear surface of the transparent substrate by using the metal wiring as a rear mask; and dissolving / removing a non-exposure region of the solder resist.

Description

A method for manufacturing a transparent display that eliminates process errors and a process laminate thereof

[0001] The present invention relates to a transparent display. More specifically, the present invention relates to a method for manufacturing a transparent display, capable of eliminating process errors when manufacturing a transparent display using low-spec LED exposure equipment capable of large-area exposure, and a process laminate thereof.

[0002] Recently, the display market has seen a growing demand for transparent displays. Transparent displays, such as transparent LED displays, are implemented by forming metal wiring on a transparent substrate and mounting components (such as LEDs) in appropriate locations.

[0003] Figure 1 is a process diagram of a transparent display manufacturing method according to conventional technology.

[0004] As illustrated in Fig. 1, a conventional transparent display forms a metal wiring (120) on a transparent substrate (110). At this time, an adhesive layer (130) may be additionally inserted to firmly bond the metal wiring (120) to the transparent substrate (110). Thereafter, a photoresist (140) is formed on the metal wiring (120), and then a patterning process such as exposure / development is performed to form a wiring open area (OA) on which a surface-mount component is mounted (bonded) to the metal wiring (120). At this time, a hole (HA), such as a contact hole, is additionally formed as needed.

[0005] Looking at the patterning process of Fig. 1, when patterning a wiring open area (OA), a hole (HA), etc., the light-blocking portion of the mask is configured to have a size (width) almost identical to the width (width) of the wiring open area (OA) or the hole (HA).

[0006] Meanwhile, when manufacturing transparent displays, alignment tolerances of ±10㎛ can be secured using LDI (Laser Direct Image) exposure equipment. However, when manufacturing large-area transparent displays exceeding 700㎜ in length, the use of LDI (Laser Direct Image) exposure equipment has limitations. For this reason, low-spec LED exposure equipment capable of large-area exposure is used when manufacturing large-area transparent displays. However, it is difficult to secure alignment tolerances with low-spec LED exposure equipment. In other words, low-spec LED exposure equipment does not have a vision camera, so alignment tolerances of 150㎛ or more can occur due to shrinkage of the film mask or tolerances in jig manufacturing / setting.

[0007] The present invention aims to resolve an alignment tolerance of 150㎛ or more that occurs when manufacturing a large-area transparent display using low-spec LED exposure equipment.

[0008] To achieve this purpose, the method for manufacturing a transparent display of the present invention comprises the steps of forming a metal wire on a transparent substrate; forming a solder resist on the transparent substrate and the metal wire; front-exposing the solder resist on the front side of the transparent substrate using a front-side mask that blocks light in an open area of ​​the wire; back-exposing the solder resist on the back side of the transparent substrate using the metal wire as a back-side mask; and dissolving / removing an unexposed area of ​​the solder resist.

[0009] In the transparent display manufacturing method of the present invention, the front exposure step configures the light-blocking portion of the front mask corresponding to the wiring open area to block light more widely than the wiring open area.

[0010] In the transparent display manufacturing method of the present invention, the front exposure step configures the light-blocking portion of the front mask corresponding to the wiring open area to be wider than 150 ㎛ outward from the edge of the wiring open area.

[0011] In the transparent display manufacturing method of the present invention, the front exposure step additionally configures a front mask that blocks light in the hole area. The back exposure step additionally uses a back mask that blocks light in the hole area.

[0012] In the transparent display manufacturing method of the present invention, the front exposure step configures the light-blocking portion of the front mask corresponding to the hole area to be wider than the hole area. The back exposure step configures the light-blocking portion of the back mask corresponding to the hole area to be wider than the hole area.

[0013] In the transparent display manufacturing method of the present invention, the front exposure step configures the light-blocking portion of the hole region in the front mask to be wider than 150 ㎛ outward from the edge of the hole region.

[0014] In the transparent display manufacturing method of the present invention, the back exposure step configures the light-blocking portion of the hole region in the back mask to be wider than 150 ㎛ outward from the edge of the hole region, but to be wider within a range of 61% of the maximum width of the hole region.

[0015] In the method for manufacturing a transparent display of the present invention, the step of forming a metal wire on a transparent substrate further includes a step of forming an adhesive layer between the transparent substrate and the metal wire.

[0016] In the method for manufacturing a transparent display of the present invention, the step of forming a solder resist laminates the solder resist on a transparent substrate and metal wiring.

[0017] The transparent display process laminate of the present invention includes a transparent substrate, metal wiring, solder resist, etc.

[0018] The transparent substrate supports metal wiring, etc. on the upper side, and can be composed of transparent glass, transparent plastic film, etc.

[0019] Metal wiring is bonded (formed) to a transparent substrate.

[0020] Solder resist is formed on the transparent substrate and metal wiring, forming a wiring open area that opens up a portion of the metal wiring. The wiring open area is configured in a trapezoidal shape with a decreasing width toward the top.

[0021] In the transparent display process laminate of the present invention, the transparent substrate may be glass.

[0022] The transparent display process laminate of the present invention includes a surface-mounted component mounted in the wiring open area. The surface-mounted component may be an LED.

[0023] The transparent display process laminate of the present invention may further include an adhesive layer bonded between the transparent substrate and the metal wiring.

[0024] In the transparent display process laminate of the present invention, the solder resist includes trapezoidal holes whose width decreases upward.

[0025] The transparent display manufacturing method of the present invention can resolve alignment tolerance to zero by changing the process from a single exposure method of front exposure using a film-type mask to a front / back double exposure (two exposures) method.

[0026] In addition, the transparent display manufacturing method can manufacture a high-precision, large-area transparent display even with a low-spec / low-cost LED exposure machine by using the front / back double exposure (two exposures) method.

[0027] Figure 1 is a process diagram of a transparent display manufacturing method according to conventional technology.

[0028] Figure 2 is a process diagram of a method for manufacturing a transparent display according to the present invention.

[0029] Figure 3 is an enlarged cross-sectional view of a transparent display process laminate according to the present invention.

[0030] Hereinafter, the present invention will be described in detail with reference to the attached drawings.

[0031]

[0032] Figure 2 is a process diagram of a method for manufacturing a transparent display according to the present invention.

[0033] As shown in FIG. 2, the method for manufacturing a transparent display of the present invention includes a step of forming a metal wiring (120) on a transparent substrate (110) (step 1), a step of forming a solder resist (140) on the transparent substrate (110) and the metal wiring (120) (step 2), a step of front-exposing the solder resist (140) on the front surface of the transparent substrate (110) using a front mask (150) that blocks light in a wiring open area (OA) (step 3), a step of back-exposing the solder resist (140) on the back surface of the transparent substrate (110) using the metal wiring (120) as a back-side mask (step 4), a step of dissolving / removing the solder resist (140) (step 5), etc.

[0034] The first step is to form a metal wiring (120) on a transparent substrate (110), as shown in Fig. 2(a).

[0035] The transparent substrate (110) supports metal wiring (120) that is bonded to the upper portion, and can be composed of a transparent plastic film, transparent glass, or the like.

[0036] Any transparent plastic film can be used. Transparent plastic films are, for example, cycloolefin derivatives having units of monomers containing cycloolefins such as norbornene or polycyclic norbornene monomers, cellulose (diacetyl cellulose, triacetyl cellulose, acetyl cellulose butyrate, isobutyl ester cellulose, propionyl cellulose, butyryl cellulose, acetyl propionyl cellulose), ethylene vinyl acetate copolymer, polyester, polystyrene, polyamide, polyetherimide, polyacrylic, polyimide, polyethersulfone, polysulfone, polyethylene, polypropylene, polymethylpentene, polyvinyl chloride, polyvinylidene chloride, polyvinyl alcohol, polyvinyl acetal, polyether ketone, polyether ether ketone, polyether sulfone, polymethyl methacrylate, It can be composed of polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polycarbonate, polyurethane, epoxy, etc.

[0037] Transparent plastic films have no specific thickness restrictions, but can range from 8 to 1,000 ㎛, specifically 20 to 150 ㎛. If the thickness of a transparent plastic film is less than 8 ㎛, its strength may be reduced, resulting in poor processability. If the thickness exceeds 1,000 ㎛, its transparency may be reduced.

[0038] The transparent substrate (110) is preferably composed of transparent glass when considering thermal deformation, etc. The transparent glass can be composed of, for example, silicate glass, borate glass, phosphate glass, etc.

[0039] Transparent glass can be configured with a thickness of 0.7 to 20 mm. If the glass thickness is less than 0.7 mm, it may be difficult to protect the metal wiring (120) or other laminated components from external impact. If the glass thickness exceeds 20 mm, it may be disadvantageous in terms of thinning and weight reduction.

[0040] Transparent glass can form micro-roughnesses on its surface to disperse the strain generated during heat treatment or cooling. The micro-roughnesses can disperse the strain that may occur during heat treatment, thereby preventing warping of the transparent substrate (110). The micro-roughnesses can be etched to form through-holes or micro-channels. The micro-roughnesses, through-holes, or micro-channels can enhance the adhesion of metal wiring during the process of forming the metal wiring.

[0041] Metal wiring (120) can be formed on a transparent substrate (110).

[0042] The metal wiring (120) may be composed of a conductive metal. The conductive metal may be composed of, for example, copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), silver (Ag), iron (Fe), gold (Au), cobalt (Co), titanium (Ti), tungsten (W), etc.

[0043] The metal wiring (120) can be formed using a known metal thin film process. The metal thin film process can use, for example, electroplating, electroless plating, sputtering, thermal evaporation, and electron beam evaporation.

[0044] The metal wiring (120) may be formed to a thickness of 3 to 120 μm, preferably 3 to 110 μm, and more preferably 18 to 105 μm. If the thickness of the metal wiring (120) is less than 3 μm, it may not be easy to form a uniform thin film or pattern. If the thickness of the metal wiring (120) exceeds 120 μm, it may not be suitable for application to electronic devices having a thin film structure.

[0045] In the first step, as shown in Fig. 2(a), an adhesive layer (130) can be additionally formed between the transparent substrate (110) and the metal wiring (120).

[0046] The adhesive layer (130) is intended to increase the adhesion between the metal wiring (120) and the transparent substrate (110), and for example, a silicone-based adhesive can be used. When a glass substrate is used as the transparent substrate (110), the silicone-based adhesive has excellent adhesion to the glass substrate, excellent chemical resistance to etching solutions, and excellent heat resistance and reliability in high temperature and high humidity environments.

[0047] The adhesive layer (130) may be manufactured from an adhesive layer composition including a silicone-based adhesive. The adhesive layer composition includes a silicone-based adhesive and a solvent. The adhesive layer composition may further include an additive.

[0048] The silicone-based adhesive may be selected within a range that does not harm the purpose of the present invention, and may be, for example, one or more of a silicone compound and a siloxane compound.

[0049] The silicon compound may be used without particular limitation as long as it is a compound containing a silicon (Si) atom. The siloxane compound may be a compound containing a siloxane bond of a Si-O bond without limitation. Specifically, the silicon compound and the siloxane compound may be at least one of trimethylated silica, vinyl terminated polydimethylsiloxane, hexyldisiloxane, trisiloxane, and tetrakis(trimethylsilyloxy)silane.

[0050] The silicone-based adhesive is preferably included at 40-60% of the total weight of the adhesive layer composition. Thus, the silicone-based adhesive of the present invention may be added in a diluted state at a lower concentration than conventional adhesives. Accordingly, when bonding the adhesive layer of the present invention to a metal layer or glass substrate, adhesion to the metal layer or glass substrate can be maximized. Consequently, bonding is possible without additional treatment, such as UV curing, of the adhesive layer.

[0051] The solvent is not particularly limited as long as it can dilute the silicone-based adhesive, and may be, for example, toluene, xylene, PGME, and / or PGMEA. It is preferable to include the solvent in an amount of 40 to 55% of the total weight of the adhesive layer composition, from the perspective of stability of the adhesive coating thickness under the metal layer.

[0052] The additive may be one or more of an anchorage, a cross linker, and a catalyst.

[0053] Anchorage is added to increase the bonding strength between the adhesive layer and the metal layer during coating, thereby preventing the adhesive layer from detaching from the metal layer. While there are no specific limitations on the material typically used as an anchorage, it is preferred that it does not undergo thermal deformation at temperatures below 200°C.

[0054] A crosslinking agent is a substance added to chemically bond the components of the adhesive layer composition, and it is preferable that no thermal deformation occurs at temperatures below 200°C.

[0055] A catalyst is a component added to the adhesive layer composition for curing, and helps the adhesive layer composition transform from a liquid state to a solid state. Examples of catalysts that can be used include a platinum catalyst, a palladium catalyst, and / or an osmium catalyst.

[0056] It is preferable from the viewpoint of adhesive stability to include the additive in an amount of 0.1 to 10% based on the total weight of the adhesive layer composition.

[0057] The adhesive layer (130) may be formed by heating the adhesive layer composition to a temperature of 100 to 180°C and curing it.

[0058] The adhesive layer (130) may have a thickness of 5 to 50 μm, preferably 5 to 30 μm, and more preferably 5 to 25 μm. If the thickness of the adhesive layer is less than 5 μm, it may be difficult to maintain sufficient adhesive strength with other components. If the thickness of the adhesive layer exceeds 50 μm, there may be disadvantages in terms of product thickness.

[0059] Thus, using a silicone-based adhesive with excellent chemical resistance to etchants prevents damage to the adhesive layer caused by the etchant, eliminating the need for separate intermediate layers or protective layers, which were previously required to protect the adhesive layer. This improves processability, reduces manufacturing costs, and facilitates film thinning.

[0060] Bonding of the adhesive layer and the glass substrate can be performed appropriately within a range that does not harm the purpose of the present invention, for example, a laminator can be used.

[0061] The second step is to form a solder resist (140) on the transparent substrate (110) and the metal wiring (120), as shown in Fig. 2(b). When an adhesive layer (130) is additionally formed, the solder resist (140) can be formed on the adhesive layer (130) and the metal wiring (120).

[0062] The solder resist (140) can be composed of, for example, a photosensitive resin composition.

[0063] Solder resist (140) can be classified into thermal curing, photocuring, and thermal curing types depending on the curing method. Solder resist (140) can be classified into liquid and film types depending on the form.

[0064] Liquid type solder resists may include binder resins, photopolymerizable compounds, photopolymerization initiators, solvents, and other additives. Film type solder resists may include protective films, photosensitive resin layers, base films, and the like.

[0065] In the case of the liquid type, a solder resist (140) can be formed by spin-coating, drying / heat treating, etc. a liquid photosensitive resin on a transparent substrate (110) and metal wiring (120) or on an adhesive layer (130) and metal wiring (120).

[0066] In the case of the film type, for example, a film type solder resist can be laminated on a transparent substrate (110) and a metal wiring (120) or on an adhesive layer (130) and a metal wiring (120).

[0067] Since liquid type solder resist requires repeated printing and drying processes, it may be preferable to use a film type solder resist. Using a film type solder resist makes it difficult for air bubbles to be mixed under the solder resist (140), and the film has excellent flatness, enabling efficient mounting of LED chips and achieving high resolution.

[0068] Solder resist is applied to form a solder resist layer on, for example, a wiring board, a circuit board, etc. The solder resist is preferably a dry film solder resist.

[0069] Solder resists can be classified into positive types, in which the exposed portion is removed, and negative types, in which the unexposed portion is removed. In the present invention, it may be preferable to use the negative type.

[0070] In the third step, as shown in Fig. 2(c), the solder resist (140) can be exposed to light on the entire surface of the transparent substrate (110) using a front mask (150) in the form of a pattern that blocks light in the wiring open area (OA).

[0071] The front mask (150) can be configured to block light more widely than the wiring open area (OA) in consideration of (proportional to) the process error.

[0072] Considering that the process error of low-spec LED exposure equipment is 150㎛ or more, the front mask (150) can be formed so that the light-blocking portion of the wiring open area (OA) is wider than 150㎛ from the edge of the wiring open area (OA) to the outside.

[0073] The front mask (150) can be configured to have a light-blocking portion of the wiring open area (OA) 15 to 100% wider than the maximum width of the wiring open area (OA), preferably 40 to 50% wider, and more preferably 50% wider, based on the maximum width of the wiring open area (OA) in the transparent display.

[0074] In the front exposure step of the third step, a form that blocks light in the hole area (HA) can be added to the front mask (150), as shown in Fig. 2(c).

[0075] The front mask (150) can be formed to be wider than 150㎛ from the edge of the hole area (HA) to the outside, taking into account that the process error of low-spec LED exposure equipment is 150㎛ or more.

[0076] In the fourth step, as shown in Fig. 2(d), the solder resist (140) can be exposed to the back surface using the metal wiring (120) as a back mask on the back surface of the transparent substrate (110).

[0077] The back exposure in the fourth step forms a non-exposed area in the solder resist (140) with a width corresponding to the width of the metal wiring (120) through light blocking by the metal wiring (120). As a result, the process error problem of low-spec LED exposure equipment can be resolved.

[0078] In the back exposure of the fourth step, a back mask (160) that blocks light in the hole area (HA) can be additionally used, as shown in Fig. 2(d). The back mask (160) can be formed to be wider than 150 ㎛ outward from the edge of the hole area (HA), considering that the process error of low-spec LED exposure equipment is 150 ㎛ or more.

[0079] By additionally using a back mask (160) that blocks light in the hole area (HA) during the back exposure step, process errors can be significantly reduced in combination with front exposure.

[0080] In the back exposure of the fourth step, the light-blocking portion of the hole area of ​​the back mask (160) can be configured to block light more widely than the hole area (HA) considering the thickness of the transparent substrate (110).

[0081] Table 1 below shows the measurement of the deviation in back exposure according to the thickness of the transparent substrate (110).

[0082] Mask design value (hole size, ㎛)Measurement value deviation (measurement value - design value)1.8T1.1T1.8T1.1T1,000Pattern implementation ХPattern implementation ХPattern implementation ХPattern implementation ХPattern implementation Х1,100Pattern implementation ХPattern implementation ХPattern implementation ХPattern implementation Х1,200Pattern implementation ХPattern implementation ХPattern implementation ХPattern implementation Х2,0008331,328-1,168-6722,2008341,464-1,366-7362,4009381,598-1,462-8024, 0002,6882,133-1,312-6584,4003,1103,342-1,290-6704,8003,5013,730-1,300-677

[0083] As shown in Table 1 above, pattern implementation was difficult when the hole size was 1,200㎛ or less. When forming a hole with a diameter of 2,000 to 4,800㎛, which is generally configured in a transparent display, a deviation of up to 61% occurred (a deviation of -1,462㎛ occurred at a hole size of 2,400㎛, forming a hole that was approximately 61% smaller) when the transparent substrate (110) was used with a thickness of 1.8T. When the transparent substrate (110) was used with a thickness of 1.1T, a deviation of up to 33% occurred (a deviation of -802㎛ occurred at a hole size of 2,400㎛, forming a hole that was approximately 33% smaller). In light of the above measurement results, it can be confirmed that in order to form a hole with a diameter of 2,000 to 4,800 μm in a transparent display using a transparent substrate (110) of 1.8T or 1.1T, it is necessary to configure the hole area light-blocking portion of the back mask (160) to be up to 61% larger than the hole design value. Therefore, it may be desirable to configure the hole area light-blocking portion of the back mask (160) to be at least 150 μm wider from the edge of the hole area (HA) outward in consideration of the process error, but to form the maximum enlarged width to be up to 61% wider than the width of the hole area (HA).

[0084] Step 5, as shown in Fig. 2(e), can develop the solder resist (140) to remove unexposed portions from both front and back exposures. In this case, the wiring open area (OA) can be formed with a width corresponding to the metal wiring (120) from the back exposure. The hole area (HA) can be formed with a diameter with reduced process error from the overlapping exposures of the front and back exposures.

[0085] In the fifth step, the non-exposed area of ​​the solder resist (140) can be dissolved / removed using a stripping agent.

[0086] The solder resist (140) can be dissolved / removed by immersing the solder resist (140) in a stripping solution or spraying the stripping solution onto the target object. After stripping solution treatment, an additional cleaning process can be performed to remove any stripping solution remaining on the target object. The cleaning process can use water or isopropyl alcohol instead of the stripping solution. The cleaning process can be the same as the stripping process.

[0087]

[0088] Figure 3 is an enlarged cross-sectional view of a transparent display process laminate according to the present invention.

[0089] As shown in FIG. 3, the transparent display process laminate of the present invention is a process intermediate of a transparent display derived from the manufacturing process described above, and includes a transparent substrate (110), metal wiring (120), solder resist (140), etc.

[0090] The transparent substrate (110), as described above, supports metal wiring (120) on the upper side and can be composed of transparent glass, transparent plastic film, etc.

[0091] The metal wiring (120) is bonded (formed) to the transparent substrate (110) as described above and can be composed of a conductive metal.

[0092] The solder resist (140) can be formed on the transparent substrate (110) and the metal wiring (120) while forming a wiring open area (OA) that opens a portion of the metal wiring (120) as the solder resist (140) described above. The wiring open area (OA) can form a trapezoidal opening whose width decreases upward due to the oblique exposure of the back exposure caused by the thickness of the transparent substrate (110). Surface-mount components such as LEDs and PCBs can be combined (mounted) in the wiring open area (OA).

[0093] The solder resist (140) can form a trapezoidal hole whose width decreases upward in the hole area (HA) due to the inclined exposure of the back surface due to the thickness of the transparent substrate (110).

[0094] The transparent display process laminate of the present invention may further include an adhesive layer (130) bonded between the transparent substrate (110) and the metal wiring (120), as described above. A detailed description of the adhesive layer (130) is replaced with the related description above.

[0095]

[0096] The present invention has been described in detail with several embodiments, which are intended to illustrate the invention. Those skilled in the art will readily appreciate the potential for modifications and variations to these embodiments. However, the scope of the present invention is defined by the claims below, and therefore, such modifications and variations are construed as falling within the scope of the present invention.

[0097] [Explanation of symbols]

[0098] 110: Transparent material

[0099] 120: Metal wiring

[0100] 130: Adhesive layer

[0101] 140: Solder resist

[0102] 150: Full face mask

[0103] 160: Back mask

[0104] OA: Wiring Open Area

[0105] HA: Hole area

Claims

1. A step of forming metal wiring on a transparent substrate; A step of forming a solder resist on the transparent substrate and metal wiring; A step of frontally exposing the solder resist on the front side of the transparent substrate using a front mask that blocks light in the wiring open area; A step of exposing the solder resist to the back surface using the metal wiring as a back surface mask on the back surface of the transparent substrate; and A method for manufacturing a transparent display, comprising a step of dissolving / removing a non-exposed area of ​​the solder resist.

2. In the first paragraph, the front exposure step A method for manufacturing a transparent display, wherein the light-blocking portion of the front mask corresponding to the wiring open area is configured to block light more widely than the wiring open area.

3. In the second paragraph, the front exposure step A method for manufacturing a transparent display, wherein the light-blocking portion of the front mask corresponding to the wiring open area is configured to extend outward by 150 μm or more from the edge of the wiring open area.

4. In paragraph 2, The above front exposure step additionally configures the front mask to block light in the hole area, A method for manufacturing a transparent display, wherein the back exposure step additionally uses a back mask that blocks light in the hole area.

5. In paragraph 4, The above front exposure step configures the light-blocking portion of the front mask corresponding to the hole area to be wider than the hole area, A method for manufacturing a transparent display, wherein the back exposure step configures a light-blocking portion of the back mask corresponding to the hole area to be wider than the hole area.

6. In the fifth paragraph, the front exposure step A method for manufacturing a transparent display, wherein the light-blocking portion of the hole area in the front mask is configured to extend outward by 150 μm or more from the edge of the hole area.

7. In any one of clauses 4 to 6, the back exposure step A method for manufacturing a transparent display, wherein the light-blocking portion of the hole region in the back mask is configured to be wider than 150 ㎛ from the edge of the hole region, but is configured to be wider within a range of 61% of the maximum width of the hole region.

8. In the 7th paragraph, the step of forming a metal wire on the transparent substrate is A method for manufacturing a transparent display, further comprising the step of forming an adhesive layer between the transparent substrate and the metal wiring.

9. In the 8th paragraph, the step of forming the solder resist is A method for manufacturing a transparent display, comprising laminating a solder resist on the transparent substrate and metal wiring.

10. Transparent material; Metal wiring bonded to the above transparent substrate; A transparent display process laminate, comprising a solder resist formed on the transparent substrate and the metal wiring while forming a wiring open area that opens a part of the metal wiring, and configuring the wiring open area in a trapezoidal shape whose width decreases upward.

11. In paragraph 10, the transparent substrate Glass, transparent display process laminate.

12. In paragraph 10, A transparent display process laminate comprising a surface-mount component mounted in the above wiring open area.

13. In the 12th paragraph, the surface-mounted component LED, transparent display process laminate.

14. In paragraph 10, A transparent display process laminate further comprising an adhesive layer bonded between the transparent substrate and the metal wiring.

15. In any one of clauses 10 to 14, the solder resist A transparent display process laminate comprising trapezoidal holes whose width decreases as they go upward.

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