Plasma generating system for controlling ion energy distribution in a plasma processing system

Abstract

A plasma generating system includes a power supply including a DC voltage source including a positive terminal and a negative terminal. The positive terminal is connected to ground. A switch includes a first terminal connected in parallel to the negative terminal of the DC voltage source. An impedance tuning network is connected to an output of the power supply and is configured to match an impedance of the power supply to an impedance of a substrate support and plasma. A slope control network is connected to an output of the impedance tuning network and is configured to control a slope of voltage applied to a substrate on the substrate support.

Description

PLASMA GENERATING SYSTEM FOR CONTROLLING ION ENERGY DISTRIBUTION IN A PLASMA PROCESSING SYSTEMCROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 620,330, filed on January 12, 2024. The entire disclosure of the application referenced above is incorporated herein by reference.FIELD

[0002] The present disclosure relates to substrate processing systems, and more particularly to a plasma generating system for controlling ion energy distribution in a plasma processing system.BACKGROUND

[0003] The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

[0004] Substrate processing systems may be used to treat substrates such as semiconductor wafers. The substrate treatments may include deposition, etching, cleaning, and / or other treatments. During processing, a substrate is arranged on a substrate support in a processing chamber of the substrate processing system. Gas mixtures are introduced into the processing chamber using a gas delivery device. In some processes, radio frequency (RF) plasma may be used to initiate chemical reactions.

[0005] When generating plasma, the substrate processing system may include an RF plasma generating system including an RF source and a matching network that supply RF voltage / power to a first electrode in the substrate support. The substrate is arranged on the substrate support between the first electrode and a second electrode. The second electrode includes a plate such as a gas distribution plate that is grounded.SUMMARY

[0006] A plasma generating system includes a power supply including a DC voltage source including a positive terminal and a negative terminal. The positive terminal is connected to ground. A switch includes a first terminal connected in parallel to the negative terminal of the DC voltage source. An impedance tuning network is connected to an output of the power supply and is configured to match an impedance of the power supply to an impedance of a substrate support and plasma. A slope control network is connected to an output of the impedance tuning network and is configured to control a slope of voltage applied to a substrate on the substrate support.

[0007] In other features, the power supply further comprises a first inductor connected between the negative terminal of the DC voltage source and the first terminal of the switch. The power supply further comprises a first capacitor including a first terminal connected to the negative terminal of the DC voltage source, a first diode including a cathode connected to the negative terminal of the DC voltage source, and a second capacitor including a first terminal connected to a second terminal of the first capacitor and an anode of the first diode and a second terminal connected to the first terminal of the switch.

[0008] In other features, the impedance tuning network comprises a resistor including a first terminal connected in parallel to the output of the power supply. The impedance tuning network comprises a second diode including an anode connected to a second terminal of the resistor.

[0009] In other features, the impedance tuning network comprises a second inductor and a third capacitor that are connected in parallel. A cathode of the second diode is connected to the second inductor and the third capacitor. The slope control network includes a third inductor including a first terminal connected to the output of the impedance turning network and a second terminal connected to the substrate support. The slope control network includes a fourth capacitor including a first terminal connected in parallel between the second terminal of the third inductor and the substrate support.

[0010] In other features, the fourth capacitor comprises a variable capacitor. The fourth capacitor includes a plurality of switches configured to connect different combinations of a plurality of capacitors. The fourth capacitor includes first and second metal cylinders and a motor to vary overlap of the first and second metal cylinders.

[0011] A plasma generating system comprises a power supply and slope control network including a DC voltage source including a positive terminal and a negative terminal. The positive terminal is connected to ground. A first inductance includes a first terminal connected to the negative terminal of the DC voltage source and a second terminal connected to an output of the power supply. A first capacitor includes a first terminal connected to the negative terminal of the DC voltage source. A first diode includes a cathode connected to the negative terminal of the DC voltage source. A second capacitor includes a first terminal connected to a second terminal of the first capacitor and an anode of the first diode. The plasma generating system includes a switch. A third capacitor includes a first terminal connected to the second terminal of the first inductance and a second terminal connected to a second terminal of the second capacitor and a first terminal of the switch. An impedance tuning network is connected to an output of the power supply and is configured to match an impedance of the power supply and slope control network to an impedance of a substrate support and plasma.

[0012] In other features, the first inductance includes a single inductor. In other features, the first inductance includes two inductors connected in series. The impedance tuning network comprises a resistor including a first terminal connected in parallel to the output of the power supply. The impedance tuning network comprises a second diode including an anode connected to a second terminal of the resistor. The impedance tuning network comprises a second inductor and a fourth capacitor that are connected in parallel. The cathode of the second diode is connected to the second inductor and the fourth capacitor.

[0013] In other features, the third capacitor comprises a variable capacitor. The third capacitor includes a plurality of switches configured to connect different combinations of a plurality of capacitors. The third capacitor includes first and second metal cylinders and a motor configured to vary overlap of the first and second metal cylinders.

[0014] A plasma generating system includes a power supply including a DC voltage source including a positive terminal and a negative terminal. The positive terminal is connected to ground. A first inductor is connected to the negative terminal of the DC voltage source and a second terminal is connected to an output of the power supply. A first capacitor includes a first terminal connected to the negative terminal of the DC voltage source. A first diode includes a cathode connected to the negative terminal ofthe DC voltage source. A switch includes a first terminal connected to an output of the power supply and a second terminal connected to ground. A second capacitor includes a first terminal connected to a second terminal of the first capacitor and an anode of the first diode and a second terminal connected to a second terminal of the first inductor and the first terminal of the switch. An impedance tuning network is connected to an output of the power supply and is configured to match an impedance of the power supply to an impedance of a substrate support and plasma. A slope control network includes a second inductor including a first terminal connected to the output of the impedance turning network and a second terminal connected to the substrate support. The slope control network includes a third capacitor including a first terminal connected in parallel between the second terminal of the second inductor and the substrate support.

[0015] In other features, the impedance tuning network comprises a resistor including a first terminal connected in parallel to the output of the power supply. The impedance tuning network comprises a second diode including an anode connected to a second terminal of the resistor. The impedance tuning network comprises a third inductor and a fourth capacitor that are connected in parallel. The cathode of the second diode is connected to the third inductor and the fourth capacitor.

[0016] In other features, the third capacitor comprises a variable capacitor. The third capacitor includes a plurality of switches configured to connect different combinations of a plurality of capacitors. The third capacitor includes first and second metal cylinders and a motor to vary overlap of the first and second metal cylinders.

[0017] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure.BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0019] FIG. 1 is a functional block diagram of an example of a substrate processing system including a plasma generating system controlling ion energy distribution according to the present disclosure;

[0020] FIG. 2 is a more detailed schematic and functional block diagram of an example of the plasma generating system according to the present disclosure;

[0021] FIG. 3 is a graph illustrating an example of a switch control signal according to the present disclosure;

[0022] FIG. 4 is a graph illustrating an example of a switch voltage according to the present disclosure;

[0023] FIG. 5 is a graph illustrating an example of applied voltage and substrate voltage according to the present disclosure;

[0024] FIG. 6 is a graph illustrating an example of output current according to the present disclosure;

[0025] FIGS. 7 and 8 are schematics and functional block diagrams of other examples of the ion energy distribution system according to the present disclosure;

[0026] FIG. 9A is a graph illustrating applied voltage and substrate voltage as a function of time for an RF generator without a slope control network;

[0027] FIG. 9B illustrates an ion energy trend for the RF generator without the slope control network;

[0028] FIG. 10A is a graph illustrating examples of applied voltage as a function of time for an RF generator with the slope control network including different values of the capacitance C2 according to the present disclosure;

[0029] FIG. 10B is a graph illustrating examples of substrate voltage as a function of time for an RF generator with the slope control network including different values of the capacitance C2 according to the present disclosure;

[0030] FIG. 10C illustrates an ion energy trend for the RF generator without the slope control network according to the present disclosure; and

[0031] FIG. 11 A to 11 D illustrate examples of the variable capacitor of the slope control network according to the present disclosure.

[0032] In the drawings, reference numbers may be reused to identify similar and / or identical elements.DETAILED DESCRIPTION

[0033] The present disclosure relates to a high voltage RF plasma generating system for substrate processing systems. The plasma generating system includes a power supply, an impedance tuning network, and a slope control network. The power supply generates an RF voltage using a DC voltage source switched by a high voltage switch connected in parallel to the DC voltage source. The impedance tuning network includes resistive, capacitive, and / or inductive components that match an impedance of the power supply to an impedance of the substrate support, the substrate, and the plasma. The slope control network allows more precise control of a slope of the substrate voltage between voltage pulses.

[0034] Referring now to FIG. 1 , a substrate processing system 100 includes a processing chamber 102 including a gas distribution device 104 and a substrate support 106. In some examples, the substrate support 106 includes an electrostatic chuck (ESC). During operation, a substrate 108 is arranged on the substrate support 106.If an ESC is used, the substrate support 106 includes a baseplate 110. In some examples, the baseplate 110 is made of a conducting material such as aluminum. The baseplate 110 is bonded to a top plate 112, which may be made of ceramic or another plasma resistor material. A bond layer 114 bonds the top plate 112 to the baseplate 110. The baseplate 110 may include one or more coolant channels 116 for flowing coolant through the baseplate 110. In some examples, an edge ring 118 is arranged around the substrate support 106 to shape the plasma.

[0035] A gas delivery system 130 includes one or more gas sources 132. The gas sources 132 supply one or more process gas mixtures. For an etching process, the process gas mixture may include including carrier gas, inert gases, etching gas, etc. For a deposition process, the process gas mixture may include including carrier gas, inert gases, deposition precursor gases, etc. The gas sources 132 are connected by flow metering devices 134 (e.g., mass flow controllers and valves) to a manifold 140. An output of the manifold 140 is fed to the gas distribution device 104. In some examples, a vapor delivery system 170 includes one or more vapor delivery sources that supply vapor to the manifold 140 or connect to the gas distribution device 104 downstream from the manifold 140. In some examples, the vapor delivery system 170 includes one or more ampoules 174, vaporizers 176, and flow metering devices 178 to controllably supply the vapor to the processing chamber.

[0036] In some examples, a temperature controller 142 is connected to heating elements 144 (e.g., thermal control elements (TCEs) or resistive heaters) arranged in the top plate 112. The temperature controller 142 may be used to supply power to the heating elements 144 to control a temperature of the substrate support 106 and the substrate 108 during processing. The temperature controller 142 also operates a coolant assembly 146 that controls coolant flow through the coolant channels 116. For example, the coolant assembly 146 may include a coolant pump and coolant reservoir (not shown). The temperature controller 142 operates the coolant assembly 146 to selectively flow the coolant through the coolant channels 116 to cool the substrate support 106.

[0037] A valve 150 and a pump 152 are connected to a gas line 148 (e.g., an exhaust gas line) and are used to control pressure within the processing chamber 102 and / or to evacuate reactants from the processing chamber 102. A plasma generating system 154 includes a power supply 155, an impedance tuning network 156, and a slope control network 158. A controller 160 may be used to monitor system parameters and to control components of the substrate processing system 100 based on a recipe. One or more robots 161 may be used to deliver substrates onto, and remove substrates from, the substrate support 106. The gas distribution device 104 includes a gas plenum 182 that distributes gas from the gas delivery system 130 or vapor from the vapor delivery system 170 to gas through holes 184 passing through an electrode 186 that is grounded.

[0038] Referring now to FIG. 2, an example of the plasma generating system 154 is shown in further detail. In some examples, the plasma generating system operates at high voltage (e.g., greater than 1 kV, 2kV, 3kV, 4kV, 5kV, etc.). In some examples, the RF plasma voltage is generated using a DC voltage source switched at a frequency in a range from 100 to 400 kHz, although other voltage levels and / or switching frequencies can be used.

[0039] In FIG. 2, a power supply 155’ includes a direct current (DC) voltage source ( VDC). A positive terminal of the voltage source VDC is connected to ground or other reference potential. A negative terminal of the voltage source VDC is connected to a first terminal of a capacitor Ci, a cathode of a diode Di, and a first terminal of an inductor Lo. A second terminal of the capacitor Ci and an anode of the diode Di are connected to a first terminal of a capacitor C3.

[0040] A second terminal of the capacitor C3, a second terminal of the inductor Lo, and a first terminal of a high voltage switch SI / 16 are connected to a node 210 at the output of the power supply 155’. A control terminal of the high voltage switch SI / 16 is connected to a switch controller 214, which may correspond to the controller 160 or a separate controller. The node 210 is connected to the impedance tuning network 156.

[0041] The impedance tuning network 156 includes a resistor R including a first terminal connected to a node 216 that is connected to the node 210. A second terminal of the resistor R is connected to an anode of a diode D2. A cathode of the diode D2 is connected to first terminals of an inductor L and a capacitor C1 forming a resonant circuit. Second terminals of the inductor L and the capacitor C1 are connected to ground or other reference potential.

[0042] The slope control network 158 includes an inductance L1. The inductance L1 can be designed as a discrete component or a parasitic component. If a discrete component is used, the inductance L1 includes an inductor including a first terminal connected to the node 216 and a second terminal connected to a node 218. A first terminal of a capacitor C2 is connected to the node 218. A load 220 is connected to the node 218. In some examples, the load 220 includes the substrate support, the substrate, and the plasma.

[0043] The resistance value of the resistor R is adjusted to control impedance tuning between the power supply 155 and the load 220. A ratio of the impedances Lo / L determines a substrate voltage / Vpeak-peak ratio. The capacitor C1 and the inductor L create a resonant circuit that stores and releases energy.

[0044] In some examples, the resistor R has a resistance in a range from 5 to 100 Q. In some examples, the inductor L has an inductance value in a range from 10 pH to 1 mH. In some examples, the capacitor C1 has a capacitance value in a range from 0.1 nF to 10 nF. In some examples, the inductance L1 has an inductance value in a range from 0.1 pH to 3 pH. In some examples, the capacitor C2 has a capacitance value in a range from 0.1 nF to 20 nF. In some examples, the capacitor C2 includes a variable capacitor.

[0045] Referring now to FIGS. 3 to 6, an example of operation of the plasma generating system 154 is shown. In FIG. 3, a switch control signal is shown. The switch control signal transitions the high voltage switch Sl / l / r on and off during a period T1. In FIG. 4, the switch voltage is shown. At the beginning of the period T2, the switch SI / 16 isturned off, energy in the resonant circuit (capacitor C1 and the inductor L) is released, and the voltage across the switch S Wi increases and then decreases below OV as can be seen at 250.

[0046] During a period T3 (after the period T2 and before the next pulse), the applied voltage in FIG. 5 spikes at 260 during T1 , decreases below zero during T2, and then decreases approximately linearly with a controlled slope at 270 during T3 until the next opening of the switch S Wi. The substrate voltage spikes at 272 during T2 and then has a relatively constant amplitude at 274 during T3. While a slope near zero is shown, the plasma generating system can provide controlled positive or negative slopes. In FIG. 6, output current is shown.

[0047] In FIG. 7, some of the elements of the power supply 155’ can be omitted as shown in a power supply 155”. In this example, the negative terminal of the voltage source VDC is connected to the node 210. The first terminal of the high voltage switch SI / 16 is connected to the node 210. The second terminal of the high voltage switch SI / 16 is connected to ground or other reference potential.

[0048] In FIG. 8, the power supply and all or portions of the slope control network can be combined. For example, one or both of the inductor L1 and the capacitor C2 of the slope control network can be arranged in the power supply. For example, a power supply and slope control network 410 includes both the inductor L1 and the capacitor C2. For example, the inductor L1 can be arranged between the inductor LO and the node 210. As can be appreciated, L1 and LO can be combined into a single inductor. For example, the capacitor C2 can be arranged between the node 210 and a node 212.

[0049] Referring now to FIG. 9A and 9B, performance of an RF plasma generator without a slope control network is shown. In FIG. 9A, the output waveform of the RF plasma generator and substrate voltage are shown. As can be seen, the substrate voltage includes a voltage spike in the positive direction and then a negative direction to a peak substrate voltage (and an ion energy peak). After the ion energy peak, the substrate voltage has a positive slope (and AV corresponding to substrate voltage droop) before the next voltage spike. In FIG. 9B, an ion energy trend is shown.

[0050] Referring now to FIG. 10A to 10C, performance of an RF plasma generator with the compensation network is shown with different values of the capacitor C2. In FIG. 10A and 10B, the output waveforms of the RF plasma generator and substrate voltage, respectively, are shown using the different values of the capacitor C2 (e.g.,10nF, 18nF and 20nF). In FIG. 10C, ion energy trends are shown for the different values of the capacitor C2. As can be seen, the slope of output waveform of the RF plasma generator can be adjusted by selecting different values of the capacitor C2. The slope / shape of substrate voltage 274 creates different ion energy distribution functions (IEDF) that can be selected to provide different processing effects.

[0051] Referring now to FIGS. 11 A to 11 D, examples of the variable capacitor C2 are shown. In FIG. 11A, the variable capacitor C2 may include capacitor / switch legs 350-1 , 350-2, ..., and 350-P including capacitors C2A1, C2A2, ..., and C2AP connected in series to corresponding switches SW2A1, SW2A2, ..., and SW2AP, respectively (where P is an integer greater than one). The capacitor / switch legs 350-1 , 350-2, ..., and 350-P are connected in parallel to the inductor L1 and the substrate support. The capacitors C2A1, C2A2, ..., and C2AP can be connected by the switches SW2A1, SW2A2, ..., and SW2AP individually (one at a time) and / or the switches SW2A1, SW2A2, ..., and SW2AP can be used to select combinations of two or more of the capacitors C2A1, C2A2, ..., and C2AP to provide additional capacitance values.

[0052] In FIG. 11 B, the variable capacitor C2 can include series-connected capacitors C2A1, C2A2, ..., and C2AP that are shorted or not shorted by corresponding switches SW2A1, SW2A2, ..., and SW2AP (where P is an integer greater than one). The switches SW2A1, SW2A2, ..., and SW2AP are connected in parallel across the capacitors C2A1, C2A2, ..., and C2AP. The variable capacitor C2 is connected to the inductor L1 and the substrate support. The switches SW2A1, SW2A2, ..., and SW2AP select the capacitors C2A1, C2A2, ..., and C2AP individually (one at a time) and / or combinations of two or more of the capacitors C2A1, C2A2, ..., and C2AP can be used to provide additional capacitance values.

[0053] In FIG. 11 C, more complex arrays of capacitors and switches can be used to provide additional flexibility. Capacitor legs 370-1 , 370-2, ..., and 370-P include capacitors (C2A1, C2B1, C2C1), (C2A2, C2B2, and C2C2), ..., and (C2AP, C2BP, and C2CP) that are selectively connected by corresponding series-connected switches (SW2A1, SW2B1), SW2A2, SW2B2), ..., and SW2AP, SW2BP), respectively. The capacitors legs 370-1 , 370- 2, ..., and 370-P are selectively connected to the inductor L1 and the substrate support. The capacitor legs 370-1 , 370-2, ..., and 370-P can be connected by the corresponding switches individually (one capacitor leg at a time) and / or combinations of the capacitor legs can be used to provide different capacitance values.

[0054] Referring now to FIG. 11 D, the variable capacitor C2 may include first and second metal cylinders 410 and 414 that are positioned with a variable overlap. An outer diameter of the first cylinder 410 is less than an inner diameter of the second cylinder 414. A position of at least one of the first and second cylinders 410 and 414 is adjusted relative to the other of the first and second cylinders 410 and 414 by a motor 418 to vary a capacitance of the variable capacitor C2. The amount of overlap of the cylinders 410 and 414 varies coupling to adjust the capacitance of the variable capacitor C2.

[0055] The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, and the following claims. It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Further, although each of the embodiments is described above as having certain features, any one or more of those features described with respect to any embodiment of the disclosure can be implemented in and / or combined with features of any of the other embodiments, even if that combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with one another remain within the scope of this disclosure.

[0056] Spatial and functional relationships between elements (for example, between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “disposed.” Unless explicitly described as being “direct,” when a relationship between first and second elements is described in the above disclosure, that relationship can be a direct relationship where no other intervening elements are present between the first and second elements, but can also be an indirect relationship where one or more intervening elements are present (either spatially or functionally) between the first and second elements. As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.”

[0057] In some implementations, a controller is part of a system, which may be part of the above-described examples. Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform, or platforms for processing, and / or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and / or load locks connected to or interfaced with a specific system.

[0058] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0059] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to thesystem to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0060] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0061] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

CLAIMSWhat is claimed is:1 . A plasma generating system comprising: a power supply including: a DC voltage source including a positive terminal and a negative terminal, wherein the positive terminal is connected to ground; and a switch including a first terminal connected to the negative terminal of the DC voltage source and a second terminal connected to ground; an impedance tuning network connected to an output of the power supply and configured to match an impedance of the power supply to an impedance of a substrate support and plasma; and a slope control network connected to an output of the impedance tuning network and configured to control a slope of voltage applied to a substrate on the substrate support.

2. The plasma generating system of claim 1 , wherein the power supply further comprises a first inductor connected between the negative terminal of the DC voltage source and the first terminal of the switch.

3. The plasma generating system of claim 2, wherein the power supply further comprises: a first capacitor including a first terminal connected to the negative terminal of the DC voltage source; a first diode including a cathode connected to the negative terminal of the DC voltage source; and a second capacitor including a first terminal connected to a second terminal of the first capacitor and an anode of the first diode and a second terminal connected to the first terminal of the switch.

4. The plasma generating system of claim 1 , wherein the impedance tuning network comprises a resistor including a first terminal connected in parallel to the output of the power supply.

5. The plasma generating system of claim 4, wherein the impedance tuning network comprises a second diode including an anode connected to a second terminal of the resistor.

6. The plasma generating system of claim 5, wherein the impedance tuning network comprises a second inductor and a third capacitor that are connected in parallel, wherein a cathode of the second diode is connected to the second inductor and the third capacitor.

7. The plasma generating system of claim 6, wherein the slope control network includes: a third inductor including a first terminal connected to the output of the impedance turning network and a second terminal connected to the substrate support; and a fourth capacitor including a first terminal connected in parallel between the second terminal of the third inductor and the substrate support.

8. The plasma generating system of claim 7, wherein the fourth capacitor comprises a variable capacitor.

9. The plasma generating system of claim 8, wherein the fourth capacitor includes a plurality of switches configured to connect different combinations of a plurality of capacitors.

10. The plasma generating system of claim 8, wherein the fourth capacitor includes first and second metal cylinders and a motor to vary overlap of the first and second metal cylinders.

11. A plasma generating system comprising: a power supply and slope control network including: a DC voltage source including a positive terminal and a negative terminal, wherein the positive terminal is connected to ground; a first inductance connected to the negative terminal of the DC voltage source and a second terminal connected to an output of the power supply; a first capacitor including a first terminal connected to the negative terminal of the DC voltage source; a first diode including a cathode connected to the negative terminal of the DC voltage source; a second capacitor including a first terminal connected to a second terminal of the first capacitor and an anode of the first diode; a switch; and a third capacitor including a first terminal connected to the second terminal of the first inductance and a second terminal connected to a second terminal of the second capacitor and a first terminal of the switch; and an impedance tuning network connected to an output of the power supply and configured to match an impedance of the power supply and slope control network to an impedance of a substrate support and plasma.

12. The plasma generating system of claim 11 , wherein the first inductance includes a single inductor.

13. The plasma generating system of claim 11 , wherein the first inductance includes two inductors connected in series.

14. The plasma generating system of claim 11 , wherein the impedance tuning network comprises a resistor including a first terminal connected in parallel to the output of the power supply.

15. The plasma generating system of claim 14, wherein the impedance tuning network comprises a second diode including an anode connected to a second terminal of the resistor.

16. The plasma generating system of claim 15, wherein the impedance tuning network comprises a second inductor and a fourth capacitor that are connected in parallel, wherein the cathode of the second diode is connected to the second inductor and the fourth capacitor.

17. The plasma generating system of claim 11 , wherein the third capacitor comprises a variable capacitor.

18. The plasma generating system of claim 17, wherein the third capacitor includes a plurality of switches configured to connect different combinations of a plurality of capacitors.

19. The plasma generating system of claim 17, wherein the third capacitor includes first and second metal cylinders and a motor to vary overlap of the first and second metal cylinders.

20. A plasma generating system comprising: a power supply including: a DC voltage source including a positive terminal and a negative terminal, wherein the positive terminal is connected to ground; a first inductor connected to the negative terminal of the DC voltage source and a second terminal connected to an output of the power supply; a first capacitor including a first terminal connected to the negative terminal of the DC voltage source; a first diode including a cathode connected to the negative terminal of the DC voltage source; a switch including a first terminal connected to an output of the power supply and a second terminal connected to ground; and a second capacitor including a first terminal connected to a second terminal of the first capacitor and an anode of the first diode and a second terminal connected to a second terminal of the first inductor and the first terminal of the switch; an impedance tuning network connected to an output of the power supply and configured to match an impedance of the power supply to an impedance of a substrate support and plasma; and a slope control network including: a second inductor including a first terminal connected to the output of the impedance turning network and a second terminal connected to the substrate support; and a third capacitor including a first terminal connected in parallel between the second terminal of the second inductor and the substrate support.

21. The plasma generating system of claim 20, wherein the impedance tuning network comprises a resistor including a first terminal connected in parallel to the output of the power supply.

22. The plasma generating system of claim 21 , wherein the impedance tuning network comprises a second diode including an anode connected to a second terminal of the resistor.

23. The plasma generating system of claim 22, wherein the impedance tuning network comprises a third inductor and a fourth capacitor that are connected in parallel, wherein the cathode of the second diode is connected to the third inductor and the fourth capacitor.

24. The plasma generating system of claim 20, wherein the third capacitor comprises a variable capacitor.

25. The plasma generating system of claim 24, wherein the third capacitor includes a plurality of switches configured to connect different combinations of a plurality of capacitors.

26. The plasma generating system of claim 24, wherein the third capacitor includes first and second metal cylinders and a motor to vary overlap of the first and second metal cylinders.

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