SCM-53 molecular sieve, preparation method therefor, and use thereof

Abstract

The present invention relates to an SCM-3 molecular sieve, a preparation method therefor, and a use thereof. The X-ray diffraction spectrogram of the SCM-53 molecular sieve provided by the present invention comprises a diffraction peak at 2θ of 4.292°±0.40°, and optionally further comprises one or more of diffraction peaks at 2θ of 8.805°±0.50°, 12.119°±0.40°, and 26.036°±0.40°. The SCM-53 molecular sieve of the present invention has a novel skeletal structure and / or chemical composition, and has very important application value.

Description

SCM-53 Zeolite Molecular Sieve, Its Preparation Method and Application Technical Field The present invention relates to the field of zeolite molecular sieves, and specifically relates to an SCM-53 zeolite molecular sieve, its preparation method and application. Background Art Zeolite molecular sieves are a class of inorganic crystalline microporous materials with a three-dimensional four-connected framework structure formed by primary structure units TO4 ([SiO4], [AlO4], [PO4], etc.) tetrahedrons sharing vertices. The TO4 tetrahedrons are connected by oxygen bridges into diverse secondary structures, and the secondary structures form chain structures and structure building units according to different connection methods, and finally build different zeolite molecular sieve topological structures. The specific structure of zeolite molecular sieve materials has a specific powder X-ray diffraction (XRD) pattern. The positions, relative intensities and widths of the peaks in the powder XRD pattern are related to the chemical composition, crystal grain size and shape of the substance. The unit cell parameters of different zeolite molecular sieves with the same topological structure may vary, and the powder XRD patterns may be slightly different. At the same time, zeolite molecular sieves with the same topological structure generally have the same powder XRD pattern characteristics, but due to different chemical compositions, they can be attributed and named as different zeolite molecular sieve materials. A typical example is that zeolite molecular sieve materials ZSM-5 and TS-1 with the same MFI topological structure have the same powder XRD spectroscopic characteristics, but different chemical compositions of the framework structures. They are two different zeolite molecular sieve materials. The framework structure composition elements of the ZSM-5 zeolite molecular sieve material are Si, Al, and O, and it is mainly applied in the field of acid catalysis, while the framework structure composition elements of the TS-1 zeolite molecular sieve material are Si, Ti, and O, and it is mainly applied in the catalytic oxidation process. Zeolite molecular sieves have good hydrothermal stability, adjustable pore diameters and pore shapes, and variable pore chemical compositions. These characteristics enable zeolite molecular sieve materials to have wide applications in the fields of adsorption, separation, catalysis, microelectronics, and medical diagnosis. Therefore, synthesizing molecular sieves with special framework structures has always been one of the most important research directions in the field of zeolite molecular sieves. Summary of the Invention The present invention provides a new aluminosilicate molecular sieve SCM-53, which is a germanium-free and high-silicon molecular sieve material with very important application value. Specifically, the present invention provides an aluminosilicate SCM-53 zeolite molecular sieve, characterized in that the X-ray diffraction pattern of the SCM-53 zeolite molecular sieve includes a diffraction peak at 2θ of 4.292° ± 0.40°, and optionally also includes one or more of the diffraction peaks at 2θ of 8.805° ± 0.50°, 12.119° ± 0.40° and 26.036° ± 0.40°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve further includes one or more diffraction peaks at 2θ of 14.322° ± 0.50°, 18.385° ± 0.540°, and 22.998° ± 0.40°. In some embodiments, in the SCM-53 molecular sieve, the diffraction peak intensity at 2θ of 4.292° ± 0.40° and / or 26.036° ± 0.40° is greater than the diffraction peak intensity at 2θ of 8.805° ± 0.50° and / or 12.119° ± 0.40°; and / or the diffraction peak intensity at 2θ of 4.292° ± 0.40° is greater than the diffraction peak intensity at 2θ of 26.036° ± 0.40°, or the diffraction peak intensity at 2θ of 4.292° ± 0.40° is less than the diffraction peak intensity at 2θ of 26.036° ± 0.40°; and / or the diffraction peak at 2θ of 4.292° ± 0.40° or 26.036° ± 0.40° is the strongest peak. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes (i) a diffraction peak at 2θ of 4.363° ± 0.30°, optionally further including one or more of the diffraction peaks at 2θ of 8.940° ± 0.30°, 12.08° ± 0.30°, and 26.09° ± 0.30°, or (ii) a diffraction peak at 2θ of 4.221° ± 0.30°, optionally further including one or more of the diffraction peaks at 2θ of 8.669° ± 0.30°, 12.158° ± 0.30°, and 25.982° ± 0.30°. In some further embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve further includes one or more of the diffraction peaks at 2θ of 14.48° ± 0.30°, 18.42° ± 0.50°, and 23.05° ± 0.30° in the case of (i), or further includes one or more of the diffraction peaks at 2θ of 14.164° ± 0.30°, 18.35° ± 0.50°, 22.946° ± 0.30°, and 24.019° ± 0.50° in the case of (ii). In some embodiments, in the SCM-53 molecular sieve, the diffraction peak intensity at 2θ of 4.363° ± 0.30° and / or 26.09° ± 0.30° is greater than the diffraction peak intensity at 2θ of 8.940° ± 0.30° and / or 12.08° ± 0.30°, or the diffraction peak intensity at 2θ of 4.221° ± 0.30° and / or 25.982° ± 0.30° is greater than the diffraction peak intensity at 2θ of 8.669° ± 0.30° and / or 12.158° ± 0.30°; and / or The diffraction peak intensity at 2θ of 4.363° ± 0.30° is greater than the diffraction peak intensity at 2θ of 26.09° ± 0.30°, or the diffraction peak intensity at 2θ of 4.363° ± 0.30° is less than the diffraction peak intensity at 2θ of 26.09° ± 0.30°, or the diffraction peak intensity at 2θ of 4.221° ± 0.30° is greater than the diffraction peak intensity at 2θ of 25.982° ± 0.30°, or the diffraction peak intensity at 2θ of 4.221° ± 0.30° is less than the diffraction peak intensity at 2θ of 25.982° ± 0.30°; and / or The diffraction peak at 2θ of 4.363° ± 0.30° or 26.09° ± 0.30° is the strongest peak, or the diffraction peak at 2θ of 4.221° ± 0.30° or 25.982° ± 0.30° is the strongest peak. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table A or A': Table A Table A' Preferably, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table B or B': Table B Table B' In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table C or C': Table C wherein, b: varies with 2θ Table C' wherein, b: varies with 2θ Preferably, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table D or D': Table D wherein, b: varies with 2θ Table D' wherein, b: varies with 2θ. In some embodiments, the SCM-53 molecular sieve comprises silicon, aluminum and oxygen, and / or In the SCM-53 molecular sieve, the molar ratio of silicon dioxide to aluminum oxide is 10 - 400, preferably 15 - 350, More preferably, the SCM-53 molecular sieve has a chemical composition of mSiO2·Al2O3 with the following molar ratio, where 10 ≤ m ≤ 400, preferably 15 ≤ m ≤ 350, and more preferably 20 ≤ m ≤ 300; and / or The crystals of the SCM-53 molecular sieve have a nanosheet-like morphology, and the average thickness of the crystals is less than or equal to 19 nm, preferably 3 nm - 18 nm, more preferably 5 nm - 16 nm, or the average thickness of the crystals is less than or equal to 30 nm, preferably 2 nm - 27 nm, more preferably 5 nm - 25 nm; Preferably, in the SCM-53 molecular sieve, the crystals with a thickness less than or equal to 16 nm account for at least 70% of the total number of crystals; and / or The specific surface area of the SCM-53 molecular sieve is 100 m 2 / g - 500 m 2 / g, preferably 200 m 2 / g - 400 m 2 / g or 300 m 2 / g - 450 m 2 / g; and / or The pore volume of the SCM-53 molecular sieve is 0.015 cm 3 / g - 1.0 cm 3 / g, preferably 0.05 cm 3 / g - 0.75 cm 3 / g; and / or The SCM-53 molecular sieve is germanium-free. In some embodiments, the SCM-53 molecular sieve further comprises one or more elements of sodium, potassium, germanium, titanium, boron, zirconium, tin, and iron; and / or The framework structure topology of the SCM-53 molecular sieve contains natural tiling blocks of [4 2 ·5 4 ·10 4 , [5 2 ·6·10 2 , [4·5 4 ·6 5 ·7 4 , and [6·7 2 ; and / or The natural tiling block composition of the framework structure topology of the SCM-53 molecular sieve contains 1 [4 2 ·5 4 ·10 4 , 2 [5 2 ·6·10 2 , 2 [4·5 4 ·65 ·7 4 and 4 [6·7 2 ; and / or The SCM-53 molecular sieve includes a two-dimensional 10×10 ring pore structure; and / or One or more of 4-membered rings, 5-membered rings, 6-membered rings, 7-membered rings and 10-membered rings are present in the SCM-53 molecular sieve; and / or The SCM-53 molecular sieve belongs to the monoclinic system; Preferably, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include Preferably More preferably Preferably, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include Preferably More preferably Preferably, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include Preferably More preferably Preferably, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include α = 90°, γ = 90°; Preferably, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve are β = 100° - 125°, preferably β = 105° - 115°. The present invention also provides a method for preparing an SCM-53 molecular sieve, particularly the above-mentioned SCM-53 molecular sieve, which includes the following steps: S1: Crystallize a mixture containing a silicon source, an aluminum source, an organic structure-directing agent and a solvent to obtain a crystallized solid-phase product; S2: Under acidic conditions, mix the crystallized solid-phase product with a silylating reagent and then perform hydrothermal treatment to obtain a hydrothermally treated solid-phase product; S3: Dry and calcine the hydrothermally treated solid-phase product. In some embodiments, the silicon source is calculated as SiO2 and the aluminum source is calculated as Al2O3. The molar ratio of the silicon source to the aluminum source is 1:(0.0025 - 0.25), preferably 1:(0.0025 - 0.2), more preferably 1:(0.0025 - 0.1) or 1:(0.05 - 0.2), preferably 1:(0.0025 - 0.08), and more preferably 1:(0.005 - 0.05); and / or The molar ratio of the silicon source to the organic structure-directing agent is 1:(0.10 - 0.50), preferably 1:(0.20 - 0.50), and more preferably 1:(0.30 - 0.50); and / or The molar ratio of the silicon source to the solvent is 1:(8 - 100), preferably 1:(15 - 100), and more preferably 1:(15 - 50); and / or The acidic condition is provided by an acid solution. Preferably, the concentration of the acid solution is 0.5 mol / L - 6 mol / L, preferably 1 mol / L - 5 mol / L, and more preferably 1.5 mol / L - 4.5 mol / L. The acid solution is preferably selected from aqueous or ethanol solutions of hydrochloric acid, acetic acid, or nitric acid; Preferably, the liquid-solid ratio of the acid solution to the crystallization product is (10 - 100) mL:1 g, preferably (20 - 80) mL:1 g, and more preferably (40 - 60) mL:1 g; and / or The mass ratio of the silylating reagent to the crystallization product is (0.1 - 4):1, preferably (0.2 - 2.5):1, and more preferably (0.2 - 2):1. In some embodiments, the organic structure-directing agent includes a compound represented by Formula I, In Formula I, R1 and R2 are the same or different and are each independently selected from C 1-8 alkyl, preferably selected from C 1-4 alkyl, and more preferably selected from methyl, ethyl, or propyl; X - is selected from OH - a halogen anion, carbonate, nitrate, or monovalent organic acid root; R3, R4, R5, and R6 are the same or different and are each independently selected from hydrogen, halogen, C 1-4 alkyl, preferably selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl, or propyl; Preferably, the organic structure-directing agent of Formula I is selected from one or more of ammonium 2,2-dimethyl-1,3-dihydroisoindole hydroxide, ammonium 2,2-dimethyl-1,3-dihydroisoindole bromide, and ammonium 2,2-dimethyl-1,3-dihydroisoindole chloride, and / or The organic structure-directing agent includes a compound represented by Formula I': In formula I', R'1, R'2, R'3 and R'4 are the same or different and are each independently selected from C 1-8 alkyl, preferably selected from C 1-4 alkyl, more preferably selected from methyl, ethyl or propyl; X' - is selected from OH - , a halogen anion, carbonate, nitrate or a monovalent organic acid radical; R'5 and R'6 are the same or different and are each independently selected from hydrogen, halogen, C 1-4 alkyl, preferably selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl or propyl; Preferably, the organic structure-directing agent of formula I' is selected from one or more of ammonium hydroxide 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole, ammonium bromide 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole and ammonium chloride 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole. In some embodiments, the silylating agent comprises a compound represented by formula II In formula II, R7, R8, R9 and R 10 are the same or different and are each independently selected from hydrogen, halogen, C 1-6 alkyl, C 1-6 alkoxy, preferably selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl, propyl, methoxy, ethoxy, propoxy; preferably, R7, R8, R9 and R 10 are the same and are each selected from C 1-4 alkoxy; preferably, the silylating agent is selected from one or more of tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraisopropoxysilane, monomethylchlorosilane, dimethylchlorosilane, monomethylmethoxysilane, dimethylmethoxysilane, monomethylethoxysilane and dimethylethoxysilane. In some embodiments, the crystallization process of the mixture is dynamic crystallization by rotation or stirring, the rotation speed is 10 rpm - 60 rpm, and the stirring speed is 30 rpm - 400 rpm; the crystallization conditions of the mixture are crystallization at 130°C - 180°C for 1 - 12 days, preferably crystallization at 135°C - 175°C for 2 - 11 days, more preferably crystallization at 140°C - 170°C for 3 - 10 days; and / or the temperature of the hydrothermal treatment is 80°C - 190°C; and / or the time of the hydrothermal treatment is 5 h - 48 h; and / or the temperature of the calcination is 400°C - 800°C, preferably 500°C - 700°C; and / or The roasting time is 2 h - 10 h, preferably 3 h - 9 h; and / or The silicon source is selected from one or more of silica sol, silica gel, tetraethyl orthosilicate, precipitated silica, and silicic acid; and / or The aluminum source is selected from one or more of aluminum hydroxide, aluminum isopropoxide, aluminum nitrate, and alumina; and / or The solvent is selected from water; and / or The mixture does not contain alkali metals or alkaline earth metals. The technical solution of the present invention will be described in more detail from six aspects below. In a first aspect, the X-ray diffraction pattern of the SCM-53 molecular sieve provided by the present invention includes one or more of diffraction peaks at 2θ of 4.363° ± 0.30°, 8.940° ± 0.30°, 12.08° ± 0.30°, and 26.09° ± 0.30°. In particular, the X-ray diffraction pattern of the SCM-53 molecular sieve includes a diffraction peak at 2θ of 4.363° ± 0.30°, and optionally also includes one or more of diffraction peaks at 8.940° ± 0.30°, 12.08° ± 0.30°, and 26.09° ± 0.30°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes diffraction peaks at 2θ of 4.363° ± 0.03°, 4.363° ± 0.05°, 4.363° ± 0.07°, 4.363° ± 0.1°, 4.363° ± 0.13°, 4.363° ± 0.15°, 4.363° ± 0.17°, 4.363° ± 0.2°, 4.363° ± 0.23°, 4.363° ± 0.25°, or 4.363° ± 0.27°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes diffraction peaks at 2θ of 8.940° ± 0.03°, 8.940° ± 0.05°, 8.940° ± 0.07°, 8.940° ± 0.1°, 8.940° ± 0.13°, 8.940° ± 0.15°, 8.940° ± 0.17°, 8.940° ± 0.2°, 8.940° ± 0.23°, 8.940° ± 0.25°, or 8.940° ± 0.27°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes diffraction peaks at 2θ of 12.08° ± 0.03°, 12.08° ± 0.05°, 12.08° ± 0.07°, 12.08° ± 0.1°, 12.08° ± 0.13°, 12.08° ± 0.15°, 12.08° ± 0.17°, 12.08° ± 0.2°, 12.08° ± 0.23°, 12.08° ± 0.25°, or 12.08° ± 0.27°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes diffraction peaks at 2θ of 26.09° ± 0.03°, 26.09° ± 0.05°, 26.09° ± 0.07°, 26.09° ± 0.1°, 26.09° ± 0.13°, 26.09° ± 0.15°, 26.09° ± 0.17°, 26.09° ± 0.2°, 26.09° ± 0.23°, 26.09° ± 0.25°, or 26.09° ± 0.27°. In some embodiments, the diffraction peak intensity at 4.363° ± 0.30° and / or 26.09° ± 0.30° is greater than the diffraction peak intensity at 8.940° ± 0.30° and / or 12.08° ± 0.30°. In some embodiments, the diffraction peak intensity at 4.363° ± 0.30° is greater than the diffraction peak intensity at 26.09° ± 0.30°. In some embodiments, the diffraction peak intensity at 4.363° ± 0.30° is less than the diffraction peak intensity at 26.09° ± 0.30°. In some embodiments, in the X-ray diffraction pattern of the SCM-53 molecular sieve, the diffraction peak at 2θ of 4.363° ± 0.30° is the strongest peak. In some embodiments, in the X-ray diffraction pattern of the SCM-53 molecular sieve, the diffraction peak at 2θ of 26.09° ± 0.30° is the strongest peak. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve further includes one or more of the diffraction peaks at 2θ of 14.48° ± 0.30°, 18.42° ± 0.50°, and 23.05° ± 0.30°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve further includes diffraction peaks at 2θ of 14.48° ± 0.03°, 14.48° ± 0.05°, 14.48° ± 0.07°, 14.48° ± 0.1°, 14.48° ± 0.13°, 14.48° ± 0.15°, 14.48° ± 0.17°, 14.48° ± 0.2°, 14.48° ± 0.23°, 14.48° ± 0.25°, or 14.48° ± 0.27°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve further includes diffraction peaks at 2θ of 18.42° ± 0.03°, 18.42° ± 0.05°, 18.42° ± 0.07°, 18.42° ± 0.1°, 18.42° ± 0.13°, 18.42° ± 0.15°, 18.42° ± 0.17°, 18.42° ± 0.2°, 18.42° ± 0.23°, 18.42° ± 0.25°, 18.42° ± 0.27°, 18.42° ± 0.3°, 18.42° ± 0.33°, 18.42° ± 0.35°, 18.42° ± 0.37°, 18.42° ± 0.4°, 18.42° ± 0.43°, 18.42° ± 0.45°, or 18.42° ± 0.47°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve further includes diffraction peaks at 2θ of 23.05° ± 0.03°, 23.05° ± 0.05°, 23.05° ± 0.07°, 23.05° ± 0.1°, 23.05° ± 0.13°, 23.05° ± 0.15°, 23.05° ± 0.17°, 23.05° ± 0.2°, 23.05° ± 0.23°, 23.05° ± 0.25°, or 23.05° ± 0.27°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table A: Table A In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table A-1: Table A-1 In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table A-2: Table A-2 In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table B: Table B In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table B-1: Table B-1 In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table B-2: Table B-2 In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table C: Table C wherein, b: varies with 2θ. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table C-1: Table C-1 wherein, b: varies with 2θ. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table C-2: Table C-2 wherein, b: varies with 2θ. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table D: Table D wherein, b: varies with 2θ. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table D-1: Table D-1 wherein, b: varies with 2θ. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table D-2: Table D-2 wherein, b: varies with 2θ. In some embodiments, the framework structure topology of the SCM-53 molecular sieve contains [4 2 ·5 4 ·10 4 , [5 2 ·6·10 2 , [4·5 4 ·6 5 ·7 4 and [6·7 2 natural tiling blocks. In some embodiments, the natural tiling block composition of the framework structure topology of the SCM-53 molecular sieve contains 1 [4 2 ·5 4 ·10 4 , 2 [5 2 ·6·10 2 , 2 [4·5 4·6 5 ·7 4 and 4 [6·7 2 . In some embodiments, the SCM-53 molecular sieve comprises a two-dimensional 10×10 membered ring pore system. In some embodiments, one or more of 4-membered rings, 5-membered rings, 6-membered rings, 7-membered rings and 10-membered rings are present in the SCM-53 molecular sieve. In some embodiments, the SCM-53 molecular sieve belongs to the monoclinic system. In some embodiments, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include Preferably More preferably In some embodiments, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include Preferably More preferably In some embodiments, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include Preferably More preferably In some embodiments, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include α = 90°, γ = 90°. In some embodiments, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve are β = 100° - 125°, preferably β = 105° - 115°. In some embodiments, the SCM-53 molecular sieve comprises silicon, aluminum and oxygen. In some embodiments, in the SCM-53 molecular sieve, the molar ratio of silicon dioxide to aluminum oxide (i.e., the silica-alumina ratio) is 10 - 400, such as 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 105, 110, 115, 120, 125, 130, 135, 140, 145, 150, 155, 160, 165, 170, 175, 180, 185, 190, 195, 200, 205, 210, 215, 220, 225, 230, 235, 240, 245, 250, 255, 260, 265, 270, 275, 280, 285, 290, 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, or any value therebetween. In some embodiments, the molar ratio of silicon dioxide to aluminum oxide is 15 - 350. In some embodiments, the SCM-53 molecular sieve has a chemical composition of mSiO2·Al2O3 with the following molar ratio, where 10 ≤ m ≤ 400, such as 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 105, 110, 115, 120, 125, 130, 135, 140, 145, 150, 155, 160, 165, 170, 175, 180, 185, 190, 195, 200, 205, 210, 215, 220, 225, 230, 235, 240, 245, 250, 255, 260, 265, 270, 275, 280, 285, 290, 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, or any value therebetween. In some embodiments, 15 ≤ m ≤ 350. In some embodiments, 20 ≤ m ≤ 300. In some embodiments, the crystals of the SCM-53 molecular sieve have a nanosheet-like morphology. In some embodiments, the average thickness of the crystals is less than or equal to 19 nm. In some embodiments, the average thickness of the crystals is 3 nm - 18 nm, such as 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, or any value therebetween. In some embodiments, the average thickness of the crystals is 5 nm - 16 nm. In some embodiments, in the SCM-53 molecular sieve, the crystals with a thickness less than or equal to 16 nm account for at least 70% of the total number of crystals, such as at least 75%, at least 77%, at least 80%, at least 82%, at least 84%, at least 86%, at least 90%, at least 93% or at least 95%. In some embodiments, the specific surface area of the SCM-53 molecular sieve is 100 m 2 / g - 500 m 2 / g, such as 150 m 2 / g, 200 m 2 / g, 210 m 2 / g, 220 m 2 / g, 230 m 2 / g, 240 m 2 / g, 250 m 2 / g, 260 m 2 / g, 270 m 2 / g, 280 m 2 / g, 290 m 2 / g, 300 m 2 / g, 310 m 2 / g, 320 m 2 / g, 330 m 2 / g, 340 m 2 / g, 350 m 2 / g, 360 m 2 / g, 370 m 2 / g, 380 m 2 / g, 390 m 2 / g, 400 m 2 / g, 430 m 2 / g, 450 m 2 / g, 470 m 2 / g or any value therebetween. In some embodiments, the specific surface area of the SCM-53 molecular sieve is 200 m 2 / g - 400 m 2 / g. In some embodiments, the pore volume of the SCM-53 molecular sieve is 0.015 cm 3 / g - 1.0 cm 3 / g, such as 0.07 cm 3 / g, 0.1 cm 3 / g, 0.13 cm 3 / g, 0.15 cm 3 / g, 0.17 cm 3 / g, 0.2 cm 3 / g, 0.23 cm 3 / g, 0.25 cm 3 / g, 0.27 cm 3 / g, 0.3 cm 3 / g, 0.33 cm 3 / g, 0.35 cm 3 / g, 0.37 cm 3 / g, 0.4 cm 3 / g, 0.43 cm 3 / g, 0.45 cm 3 / g, 0.47 cm 3 / g, 0.5 cm 3 / g, 0.55 cm 3 / g, 0.6 cm 3 / g, 0.65 cm 3 / g, 0.7 cm 3 / g, 0.75 cm 3 / g, 0.8 cm 3 / g, 0.85 cm 3 / g, 0.9 cm 3 / g, 0.95 cm 3 / g or any value therebetween. In some embodiments, the pore volume of the SCM-53 molecular sieve is 0.05 cm 3 / g - 0.75 cm 3 / g. In some embodiments, the SCM-53 molecular sieve further comprises elements other than silicon and aluminum, preferably the elements other than silicon and aluminum are selected from one or more of sodium, potassium, germanium, titanium, boron, zirconium, tin, and iron. In some embodiments, the SCM-53 molecular sieve further comprises one or more elements of sodium, potassium, germanium, titanium, boron, zirconium, tin, and iron. In a second aspect, the present invention provides a method for preparing an SCM-53 molecular sieve, which comprises the following steps: S1: Crystallizing a mixture containing a silicon source, an aluminum source, an organic structure-directing agent, and a solvent to obtain a crystallized solid-phase product; S2: Under acidic conditions, mixing the crystallized solid-phase product with a silylating agent and then performing hydrothermal treatment to obtain a hydrothermally treated solid-phase product; S3: Drying and calcining the hydrothermally treated solid-phase product; Preferably, the organic structure-directing agent comprises a compound represented by Formula I, In Formula I, R1 and R2 are the same or different and are each independently selected from C 1-8 alkyl, X - is selected from OH -, a halogen anion, carbonate, nitrate or monovalent organic acid radical; R3, R4, R5 and R6 are the same or different and are each independently selected from hydrogen, halogen, C 1-4 alkyl. In some embodiments, in formula I, R1 and R2 are the same or different and are each independently selected from C 1-4 alkyl, such as methyl, ethyl or propyl. In some embodiments, X - is selected from OH - , bromide ion, chloride ion, iodide ion, nitrate or acetate. In some embodiments, R3, R4, R5 and R6 are the same or different and are each independently selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl or propyl. In some embodiments, at least one of R3, R4, R5 and R6 is hydrogen. In some embodiments, at least two of R3, R4, R5 and R6 are hydrogen. In some embodiments, R3, R4, R5 and R6 are all hydrogen. In some embodiments, the organic structure-directing agent is selected from one or more of 2,2-dimethyl-1,3-dihydroisoindole ammonium hydroxide, 2,2-dimethyl-1,3-dihydroisoindole bromide and 2,2-dimethyl-1,3-dihydroisoindole chloride. In some embodiments, based on SiO2 for the silicon source and Al2O3 for the aluminum source, the molar ratio of the silicon source to the aluminum source is 1:(0.0025 - 0.1), such as 1:0.003, 1:0.004, 1:0.005, 1:0.006, 1:0.007, 1:0.008, 1:0.009, 1:0.0095, 1:0.01, 1:0.013, 1:0.015, 1:0.017, 1:0.02, 1:0.023, 1:0.025, 1:0.027, 1:0.03, 1:0.033, 1:0.035, 1:0.037, 1:0.04, 1:0.043, 1:0.045, 1:0.047, 1:0.05, 1:0.053, 1:0.055, 1:0.057, 1:0.06, 1:0.063, 1:0.065, 1:0.067, 1:0.07, 1:0.073, 1:0.075, 1:0.077, 1:0.08, 1:0.083, 1:0.085, 1:0.047, 1:0.09, 1:0.093, 1:0.095, 1:0.097 or any value therebetween. In some embodiments, the molar ratio of the silicon source to the aluminum source is 1:(0.0025 - 0.08). In some embodiments, the molar ratio of the silicon source to the aluminum source is 1:(0.005 - 0.05). In some embodiments, based on SiO2, the molar ratio of the silicon source to the organic structure-directing agent is 1:(0.10 - 0.50), such as 1:0.13, 1:0.15, 1:0.17, 1:0.20, 1:0.23, 1:0.25, 1:0.27, 1:0.30, 1:0.33, 1:0.35, 1:0.37, 1:0.40, 1:0.43, 1:0.45, 1:0.47 or any value therebetween. In some embodiments, the molar ratio of the silicon source to the organic structure-directing agent is 1:(0.20 - 0.50). In some embodiments, the molar ratio of the silicon source to the organic structure-directing agent is 1:(0.30 - 0.50). In some embodiments, based on SiO2, the molar ratio of the silicon source to the solvent is 1:(8 - 100), such as 1:10, 1:15, 1:20, 1:25, 1:30, 1:35, 1:40, 1:45, 1:50, 1:55, 1:60, 1:65, 1:70, 1:75, 1:80, 1:85, 1:90, 1:95 or any value therebetween. In some embodiments, the molar ratio of the silicon source to the solvent is 1:(15 - 100). In some embodiments, the molar ratio of the silicon source to the solvent is 1:(15 - 50). In some embodiments, the acidic condition is provided by an acid solution. In some embodiments, the concentration of the acid solution is 0.5 mol / L - 6 mol / L, such as 1 mol / L, 1.5 mol / L, 2 mol / L, 2.5 mol / L, 3 mol / L, 3.5 mol / L, 4 mol / L, 4.5 mol / L, 5 mol / L, 5.5 mol / L or any value therebetween. In some embodiments, the concentration of the acid solution is 1 mol / L - 5 mol / L. In some embodiments, the concentration of the acid solution is 1.5 mol / L - 4.5 mol / L. In some embodiments, the liquid-solid ratio of the acid solution to the crystallization product is (10 - 100) mL:1 g, such as 20 mL:1 g, 30 mL:1 g, 40 mL:1 g, 50 mL:1 g, 60 mL:1 g, 70 mL:1 g, 80 mL:1 g or 90 mL:1 g. In some embodiments, the liquid-solid ratio of the acid solution to the crystallization product is (20 - 80) mL:1 g. In some embodiments, the liquid-solid ratio of the acid solution to the crystallization product is (40 - 60) mL:1 g. In some embodiments, the mass ratio of the silylating reagent to the crystallization product is (0.1 - 4):1, such as 0.2:1, 0.3:1, 0.4:1, 0.5:1, 0.6:1, 0.7:1, 0.8:1, 0.9:1, 1.0:1, 1.1:1, 1.2:1, 1.3:1, 1.4:1, 1.5:1, 1.6:1, 1.7:1, 1.8:1, 1.9:1, 2.0:1, 2.3:1, 2.5:1, 2.7:1, 3.0:1, 3.3:1, 3.5:1 or 3.7:1. In some embodiments, the mass ratio of the silylating reagent to the crystallization product is (0.2 - 2):1. In some embodiments, the acid solution is selected from aqueous hydrochloric acid solution, aqueous acetic acid solution, aqueous nitric acid solution, hydrochloric acid ethanol solution, acetic acid ethanol solution or nitric acid ethanol solution. In some embodiments, the silylating reagent comprises a compound represented by Formula II In Formula II, R7, R8, R9 and R 10 are the same or different and each independently selected from hydrogen, halogen, C 1-6 alkyl, C 1-6 alkoxy. In some embodiments, R7, R8, R9 and R 10 are the same or different and each independently selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl, propyl, methoxy, ethoxy, propoxy. In some embodiments, the silylating reagent is selected from one or more of monomethylchlorosilane, dimethylchlorosilane, monomethylmethoxysilane, dimethylmethoxysilane, monomethylethoxysilane and dimethylethoxysilane. In the present invention, the silylating reagent is used to perform a directional structure modification on the pore walls of the molecular sieve precursor under acidic conditions. In some embodiments, the silicon source is selected from one or more of silica sol, silica gel, tetraethyl orthosilicate and silicic acid. In some embodiments, the aluminum source is selected from one or more of aluminum hydroxide, aluminum isopropoxide, aluminum nitrate and alumina. In some embodiments, the solvent is selected from water. In some embodiments, the mixture does not contain alkali metals or alkaline earth metals. According to one embodiment of the present invention, in the synthesis method of the molecular sieve, from the perspective of being more conducive to obtaining the SCM-53 molecular sieve of the present invention, the mixture does not contain an alkali source. As the alkali source, for example, alkaline substances other than the silicon source, aluminum source, and organic structure-directing agent can be cited. Specifically, for example, any alkali source conventionally used in the art for the purpose of making the system alkaline can be cited. More specifically, for example, inorganic alkalis with alkali metals or alkaline earth metals as cations can be cited, especially sodium hydroxide and potassium hydroxide, etc. Here, the so-called "does not contain an alkali source" means that the alkali source is not deliberately or actively introduced into the mixture. In some embodiments, the crystallization process of the mixture is dynamic crystallization with rotation. In some embodiments, the rotation speed is 10 rpm - 60 rpm, for example, 20 rpm, 30 rpm, or 40 rpm. In some embodiments, the crystallization process of the mixture is dynamic crystallization with stirring. In some embodiments, the stirring speed is 30 rpm - 400 rpm, for example, 50 rpm, 100 rpm, 150 rpm, 200 rpm, 250 rpm, 300 rpm, or 350 rpm. In some embodiments, the crystallization conditions of the mixture are crystallization at 130°C - 180°C, for example, 135°C, 140°C, 145°C, 150°C, 155°C, 160°C, 165°C, 170°C, or 175°C for 1 - 12 days, for example, 2 days, 3 days, 4 days, 5 days, 6 days, 7 days, 8 days, 9 days, 10 days, or 11 days. In some embodiments, the crystallization conditions of the mixture are crystallization at 135°C - 175°C for 2 - 11 days. In some embodiments, the crystallization conditions of the mixture are crystallization at 140°C - 170°C for 3 - 10 days. In some embodiments, the temperature of the hydrothermal treatment is 80°C - 190°C, for example, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C, 170°C, or 180°C. In some embodiments, the time of the hydrothermal treatment is 5 h - 48 h, for example, 8 h, 10 h, 12 h, 15 h, 20 h, 24 h, 28 h, 30 h, 32 h, 36 h, 40 h, 44 h, or 46 h. In some embodiments, the temperature of the calcination is 400°C - 800°C, for example, 450°C, 500°C, 550°C, 600°C, 650°C, 700°C, or 750°C. In some embodiments, the temperature of the calcination is 500°C - 700°C. In some embodiments, the time of the calcination is 2 h - 10 h, for example, 3 h, 4 h, 5 h, 6 h, 7 h, 8 h, or 9 h. In some embodiments, the time of the calcination is 3 h - 9 h. In some embodiments, the calcination is carried out in an oxygen-containing atmosphere. In some embodiments, the calcination conditions of the hydrothermal treatment product are calcination for 2 to 10 hours in an oxygen-containing atmosphere at 400°C - 800°C, preferably calcination for 3 to 9 hours in an oxygen-containing atmosphere at 500°C - 700°C. According to the present invention, the various SCM-53 molecular sieves obtained above can be applied in any physical form, such as powder form, granular form or molded form (such as strip form, clover form, etc.). These physical forms can be obtained in any manner conventionally known in the art, and there is no particular limitation. In a third aspect, the X-ray diffraction pattern of the SCM-53 molecular sieve provided by the present invention includes one or more of the diffraction peaks at 2θ of 4.221° ± 0.30°, 8.669° ± 0.30°, 12.158° ± 0.30° and 25.982° ± 0.30°. In particular, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peak at 2θ of 4.221° ± 0.30°, and optionally also includes one or more of the diffraction peaks at 8.669° ± 0.30°, 12.158° ± 0.30° and 25.982° ± 0.30°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes diffraction peaks at 2θ of 4.221° ± 0.03°, 4.221° ± 0.05°, 4.221° ± 0.07°, 4.221° ± 0.1°, 4.221° ± 0.13°, 4.221° ± 0.15°, 4.221° ± 0.17°, 4.221° ± 0.2°, 4.221° ± 0.23°, 4.221° ± 0.25° or 4.221° ± 0.27°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes diffraction peaks at 2θ of 8.669° ± 0.03°, 8.669° ± 0.05°, 8.669° ± 0.07°, 8.669° ± 0.1°, 8.669° ± 0.13°, 8.669° ± 0.15°, 8.669° ± 0.17°, 8.669° ± 0.2°, 8.669° ± 0.23°, 8.669° ± 0.25° or 8.669° ± 0.27°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes diffraction peaks at 2θ of 12.158° ± 0.03°, 12.158° ± 0.05°, 12.158° ± 0.07°, 12.158° ± 0.1°, 12.158° ± 0.13°, 12.158° ± 0.15°, 12.158° ± 0.17°, 12.158° ± 0.2°, 12.158° ± 0.23°, 12.158° ± 0.25°, or 12.158° ± 0.27°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes diffraction peaks at 2θ of 25.982° ± 0.03°, 25.982° ± 0.05°, 25.982° ± 0.07°, 25.982° ± 0.1°, 25.982° ± 0.13°, 25.982° ± 0.15°, 25.982° ± 0.17°, 25.982° ± 0.2°, 25.982° ± 0.23°, 25.982° ± 0.25°, or 25.982° ± 0.27°. In some embodiments, the intensity of the diffraction peak at 4.221° ± 0.30° and / or 25.982° ± 0.30° is greater than the intensity of the diffraction peak at 8.669° ± 0.30° and / or 12.158° ± 0.30°. In some embodiments, the intensity of the diffraction peak at 4.221° ± 0.30° is greater than the intensity of the diffraction peak at 25.982° ± 0.30°. In some embodiments, the intensity of the diffraction peak at 4.221° ± 0.30° is less than the intensity of the diffraction peak at 25.982° ± 0.30°. In some embodiments, in the X-ray diffraction pattern of the SCM-53 molecular sieve, the diffraction peak at 2θ of 4.221° ± 0.30° is the strongest peak. In some embodiments, in the X-ray diffraction pattern of the SCM-53 molecular sieve, the diffraction peak at 2θ of 25.982° ± 0.30° is the strongest peak. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve further includes one or more of the diffraction peaks at 2θ of 14.164° ± 0.30°, 18.35° ± 0.50°, 22.946° ± 0.30°, and 24.019° ± 0.50°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve further includes diffraction peaks at 2θ of 14.164° ± 0.03°, 14.164° ± 0.05°, 14.164° ± 0.07°, 14.164° ± 0.1°, 14.164° ± 0.13°, 14.164° ± 0.15°, 14.164° ± 0.17°, 14.164° ± 0.2°, 14.164° ± 0.23°, 14.164° ± 0.25°, or 14.164° ± 0.27°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve further includes diffraction peaks at 2θ of 18.35° ± 0.03°, 18.35° ± 0.05°, 18.35° ± 0.07°, 18.35° ± 0.1°, 18.35° ± 0.13°, 18.35° ± 0.15°, 18.35° ± 0.17°, 18.35° ± 0.2°, 18.35° ± 0.23°, 18.35° ± 0.25°, 18.35° ± 0.27°, 18.35° ± 0.3°, 18.35° ± 0.33°, 18.35° ± 0.35°, 18.35° ± 0.37°, 18.35° ± 0.4°, 18.35° ± 0.43°, 18.35° ± 0.45°, or 18.35° ± 0.47°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve further includes diffraction peaks at 2θ of 22.946° ± 0.03°, 22.946° ± 0.05°, 22.946° ± 0.07°, 22.946° ± 0.1°, 22.946° ± 0.13°, 22.946° ± 0.15°, 22.946° ± 0.17°, 22.946° ± 0.2°, 22.946° ± 0.23°, 22.946° ± 0.25°, or 22.946° ± 0.27°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve further includes diffraction peaks at 2θ of 24.019° ± 0.03°, 24.019° ± 0.05°, 24.019° ± 0.07°, 24.019° ± 0.1°, 24.019° ± 0.13°, 24.019° ± 0.15°, 24.019° ± 0.17°, 24.019° ± 0.2°, 24.019° ± 0.23°, 24.019° ± 0.25°, 24.019° ± 0.27°, 24.019° ± 0.3°, 24.019° ± 0.33°, 24.019° ± 0.35°, 24.019° ± 0.37°, 24.019° ± 0.4°, 24.019° ± 0.43°, 24.019° ± 0.45°, or 24.019° ± 0.47°. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table A': Table A' In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table A'-1: Table A'-1 In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table A'-2: Table A'-2 In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table B': Table B' In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table B'-1: Table B'-1 In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table B'-2: Table B'-2 In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table C': Table C' wherein, b: varies with 2θ. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table C'-1: Table C'-1 where b varies with 2θ. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table C'-2: Table C'-2 where b varies with 2θ. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table D': Table D' where b varies with 2θ. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table D'-1: Table D'-1 where b varies with 2θ. In some embodiments, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table D'-2: Table D'-2 where b varies with 2θ. In some embodiments, the framework structure topology of the SCM-53 molecular sieve contains [4 2 ·5 4 ·10 4 , [5 2 ·6·10 2 , [4·5 4 ·6 5 ·7 4 , and [6·7 2 natural tiling blocks. In some embodiments, the natural tiling block composition of the framework structure topology of the SCM-53 molecular sieve contains 1 [4 2 ·5 4 ·10 4 , 2 [5 2 ·6·10 2 , 2 [4·5 4 ·6 5 ·7 4 , and 4 [6·7 2 . In some embodiments, the SCM-53 molecular sieve contains a 10×10 ring pore system. In some embodiments, one or more of 4-membered rings, 5-membered rings, 6-membered rings, 7-membered rings, and 10-membered rings are present in the SCM-53 molecular sieve. In some embodiments, the SCM-53 molecular sieve belongs to the monoclinic system. In some embodiments, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include Preferably More preferably In some embodiments, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include Preferably More preferably In some embodiments, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include Preferably More preferably In some embodiments, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include α = 90°, γ = 90°. In some embodiments, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve are β = 100° - 125°, preferably β = 105° - 115°. In some embodiments, the SCM-53 molecular sieve comprises silicon, aluminum, and oxygen. In some embodiments, in the SCM-53 molecular sieve, the molar ratio of silicon dioxide to aluminum oxide (i.e., the silica-alumina ratio) is 10 - 400, such as 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 105, 110, 115, 120, 125, 130, 135, 140, 145, 150, 155, 160, 165, 170, 175, 180, 185, 190, 195, 200, 205, 210, 215, 220, 225, 230, 235, 240, 245, 250, 255, 260, 265, 270, 275, 280, 285, 290, 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, or any value therebetween. In some embodiments, the molar ratio of silicon dioxide to aluminum oxide is 15 - 350. In some embodiments, the SCM-53 molecular sieve has a chemical composition of mSiO2·Al2O3 with the following molar ratio, where 10 ≤ m ≤ 400, for example 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 105, 110, 115, 120, 125, 130, 135, 140, 145, 150, 155, 160, 165, 170, 175, 180, 185, 190, 195, 200, 205, 210, 215, 220, 225, 230, 235, 240, 245, 250, 255, 260, 265, 270, 275, 280, 285, 290, 300, 310, 320, 330, 340, 350, 360, 370, 380, 390 or any value therebetween. In some embodiments, 15 ≤ m ≤ 350. In some embodiments, 20 ≤ m ≤ 300. In some embodiments, the crystals of the SCM-53 molecular sieve have a nano-sheet morphology. In some embodiments, the average thickness of the crystals is less than or equal to 30 nm. In some embodiments, the average thickness of the crystals is 2 nm - 27 nm, for example 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm or any value therebetween. In some embodiments, the average thickness of the crystals is 5 nm - 25 nm. In some embodiments, the specific surface area of the SCM-53 molecular sieve is 100 m 2 / g - 500 m 2 / g, for example 150 m 2 / g, 200 m 2 / g, 210 m 2 / g, 220 m 2 / g, 230 m 2 / g, 240 m 2 / g, 250 m 2 / g, 260 m 2 / g, 270 m 2 / g, 280 m 2 / g, 290 m 2 / g, 300 m 2 / g, 310 m 2 / g, 320 m 2 / g, 330 m2 / g, 340 m 2 / g, 350 m 2 / g, 360 m 2 / g, 370 m 2 / g, 380 m 2 / g, 390 m 2 / g, 400 m 2 / g, 430 m 2 / g, 450 m 2 / g, 470 m 2 / g or any value therebetween. In some embodiments, the specific surface area of the SCM-53 molecular sieve is 200 m 2 / g - 400 m 2 / g. In some embodiments, the specific surface area of the SCM-53 molecular sieve is 300 m 2 / g - 450 m 2 / g. In some embodiments, the pore volume of the SCM-53 molecular sieve is 0.015 cm 3 / g - 1.0 cm 3 / g, such as 0.07 cm 3 / g, 0.1 cm 3 / g, 0.13 cm 3 / g, 0.15 cm 3 / g, 0.17 cm 3 / g, 0.2 cm 3 / g, 0.23 cm 3 / g, 0.25 cm 3 / g, 0.27 cm 3 / g, 0.3 cm 3 / g, 0.33 cm 3 / g, 0.35 cm 3 / g, 0.37 cm 3 / g, 0.4 cm 3 / g, 0.43 cm 3 / g, 0.45 cm 3 / g, 0.47 cm 3 / g, 0.5 cm 3 / g, 0.55 cm 3 / g, 0.6 cm 3 / g, 0.65 cm 3 / g, 0.7 cm 3 / g, 0.75 cm 3 / g, 0.8 cm 3 / g, 0.85 cm 3 / g, 0.9 cm 3 / g, 0.95 cm 3 / g or any value therebetween. In some embodiments, the pore volume of the SCM-53 molecular sieve is 0.05 cm 3 / g - 0.75 cm 3 / g. In some embodiments, the SCM-53 molecular sieve further comprises elements other than silicon and aluminum, preferably the elements other than silicon and aluminum are selected from one or more of sodium, potassium, germanium, titanium, boron, zirconium, tin, and iron. In some embodiments, the SCM-53 molecular sieve further comprises one or more elements of sodium, potassium, germanium, titanium, boron, zirconium, tin, and iron. In a fourth aspect, the present invention provides another method for preparing an SCM-53 molecular sieve, which comprises the following steps: S1: Crystallizing a mixture containing a silicon source, an aluminum source, an organic structure-directing agent, and a solvent to obtain a crystallized solid-phase product; S2: Under acidic conditions, mixing the crystallized solid-phase product with a silylating agent and then performing hydrothermal treatment to obtain a hydrothermally treated solid-phase product; S3: Drying and calcining the hydrothermally treated solid-phase product; Preferably, the organic structure-directing agent comprises a compound represented by Formula I': In Formula I', R'1, R'2, R'3, and R'4 are the same or different and are each independently selected from C 1-8 alkyl, and X' - is selected from OH - , a halogen anion, carbonate, nitrate, or a monovalent organic acid root; R5 and R6 are the same or different and are each independently selected from hydrogen, halogen, C 1-4 alkyl. In some embodiments, in Formula I', R'1, R'2, R'3, and R'4 are the same or different and are each independently selected from C 1-4 alkyl, such as methyl, ethyl, or propyl. In some embodiments, in Formula I', R'1 and R'3 are the same, and R'2 and R'4 are the same. In some embodiments, X' - is selected from OH - , bromide ion, chloride ion, iodide ion, nitrate, or acetate. In some embodiments, R'5 and R'6 are the same or different and are each independently selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl, or propyl. In some embodiments, at least one of R'5 and R'6 is hydrogen. In some embodiments, both R'5 and R'6 are hydrogen. In some embodiments, the organic structure-directing agent is selected from one or more of ammonium 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole hydroxide, ammonium 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole bromide, and ammonium 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole chloride. In some embodiments, based on SiO2 for the silicon source and Al2O3 for the aluminum source, the molar ratio of the silicon source to the aluminum source is 1:(0.0025 - 0.25), such as 1:0.003, 1:0.004, 1:0.005, 1:0.006, 1:0.007, 1:0.008, 1:0.009, 1:0.0095, 1:0.01, 1:0.013, 1:0.015, 1:0.017, 1:0.02, 1:0.023, 1:0.025, 1:0.027, 1:0.03, 1:0.033, 1:0.035, 1:0.037, 1:0.04, 1:0.043, 1:0.045, 1:0.047, 1:0.05, 1:0.053, 1:0.055, 1:0.057, 1:0.06, 1:0.063, 1:0.065, 1:0.067, 1:0.07, 1:0.073, 1:0.075, 1:0.077, 1:0.08, 1:0.083, 1:0.085, 1:0.047, 1:0.09, 1:0.093, 1:0.095, 1:0.097, 1:0.1, 1:0.105, 1:0.12, 1:0.125, 1:0.13, 1:0.135, 1:0.14, 1:0.145, 1:0.15, 1:0.155, 1:0.16, 1:0.165, 1:0.17, 1:0.175, 1:0.18, 1:0.185, 1:0.19, 1:0.195, 1:0.1, 1:0.205, 1:0.22, 1:0.225, 1:0.23, 1:0.235, 1:0.24, 1:0.245, or any value therebetween. In some embodiments, the molar ratio of the silicon source to the aluminum source is 1:(0.0025 - 0.2). In some embodiments, the molar ratio of the silicon source to the aluminum source is 1:(0.05 - 0.2). In some embodiments, the silicon source is calculated as SiO2, and the molar ratio of the silicon source to the organic structure-directing agent is 1:(0.050 - 0.50), such as 1:0.05, 1:0.06, 1:0.07, 1:0.08, 1:0.09, 1:0.1, 1:0.11, 1:0.12, 1:0.13, 1:0.14, 1:0.15, 1:0.17, 1:0.20, 1:0.23, 1:0.25, 1:0.27, 1:0.30, 1:0.33, 1:0.35, 1:0.37, 1:0.40, 1:0.43, 1:0.45, 1:0.47 or any value therebetween. In some embodiments, the molar ratio of the silicon source to the organic structure-directing agent is 1:(0.10 - 0.50). In some embodiments, the molar ratio of the silicon source to the organic structure-directing agent is 1:(0.30 - 0.50). In some embodiments, the silicon source is calculated as SiO2, and the molar ratio of the silicon source to the solvent is 1:(8 - 100), such as 1:10, 1:15, 1:20, 1:25, 1:30, 1:35, 1:40, 1:45, 1:50, 1:55, 1:60, 1:65, 1:70, 1:75, 1:80, 1:85, 1:90, 1:95 or any value therebetween. In some embodiments, the molar ratio of the silicon source to the solvent is 1:(15 - 100). In some embodiments, the molar ratio of the silicon source to the solvent is 1:(15 - 50). In some embodiments, the acidic condition is provided by an acid solution. In some embodiments, the concentration of the acid solution is 0.5 mol / L - 6 mol / L, such as 1 mol / L, 1.5 mol / L, 2 mol / L, 2.5 mol / L, 3 mol / L, 3.5 mol / L, 4 mol / L, 4.5 mol / L, 5 mol / L, 5.5 mol / L or any value therebetween. In some embodiments, the concentration of the acid solution is 1 mol / L - 5 mol / L. In some embodiments, the concentration of the acid solution is 1.5 mol / L - 4.5 mol / L. In some embodiments, the liquid-solid ratio of the acid solution to the crystallization product is (10 - 100) mL:1 g, such as 20 mL:1 g, 30 mL:1 g, 40 mL:1 g, 50 mL:1 g, 60 mL:1 g, 70 mL:1 g, 80 mL:1 g or 90 mL:1 g. In some embodiments, the liquid-solid ratio of the acid solution to the crystallization product is (20 - 80) mL:1 g. In some embodiments, the liquid-solid ratio of the acid solution to the crystallization product is (40 - 60) mL:1 g. In some embodiments, the mass ratio of the silanizing reagent to the crystallization product is (0.1-4):1, such as 0.2:1, 0.3:1, 0.4:1, 0.5:1, 0.6:1, 0.7:1, 0.8:1, 0.9:1, 1.0:1, 1.1:1, 1.2:1, 1.3:1, 1.4:1, 1.5:1, 1.6:1, 1.7:1, 1.8:1, 1.9:1, 2.0:1, 2.3:1, 2.5:1, 2.7:1, 3.0:1, 3.3:1, 3.5:1 or 3.7:1. In some embodiments, the mass ratio of the silanizing reagent to the crystallization product is (0.2-2):1. In some em In some embodiments, the mass ratio of the silanizing reagent to the crystallization product is (0.2-2.5):1. In some embodiments, the acid solution is selected from aqueous hydrochloric acid solution, aqueous acetic acid solution, aqueous nitric acid solution, hydrochloric acid ethanol solution, acetic acid ethanol solution or nitric acid ethanol solution. In some embodiments, the silanizing reagent comprises a compound represented by Formula II In Formula II, R7, R8, R9 and R 10 are the same or different and each independently selected from hydrogen, halogen, C 1-6 alkyl, C 1-6 alkoxy. In some embodiments, R7, R8, R9 and R 10 are the same or different and each independently selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl, propyl, methoxy, ethoxy, propoxy. In some embodiments, R7, R8, R9 and R 10 are the same and are each selected from C 1-4 alkoxy. In some embodiments, the silanizing reagent is selected from one or more of tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraisopropoxysilane, monomethylchlorosilane, dimethylchlorosilane, monomethylmethoxysilane, dimethylmethoxysilane, monomethylethoxysilane and dimethylethoxysilane. In the present invention, the silanizing reagent is used to perform a directional structure modification on the pore walls of the molecular sieve precursor under acidic conditions. In some embodiments, the silicon source is selected from one or more of silica sol, silica gel, tetraethyl orthosilicate, fumed silica and silicic acid. In some embodiments, the aluminum source is selected from one or more of aluminum hydroxide, aluminum isopropoxide, aluminum nitrate and aluminum oxide. In some embodiments, the solvent is selected from water. In some embodiments, the mixture does not contain alkali metals or alkaline earth metals. According to one embodiment of the present invention, in the synthesis method of the molecular sieve, from the perspective of being more conducive to obtaining the SCM-53 molecular sieve of the present invention, the mixture does not contain an alkali source. As the alkali source, for example, alkaline substances other than the silicon source, aluminum source, and organic structure-directing agent can be cited. Specifically, for example, any alkali source conventionally used in the art for the purpose of making the system alkaline can be cited. More specifically, for example, inorganic alkalis with alkali metals or alkaline earth metals as cations, especially sodium hydroxide and potassium hydroxide, etc. Here, the so-called "does not contain an alkali source" means that the alkali source is not deliberately or actively introduced into the mixture. In some embodiments, the crystallization process of the mixture is rotational dynamic crystallization. In some embodiments, the rotational speed is 10 rpm - 60 rpm, for example, 20 rpm, 30 rpm, or 40 rpm. In some embodiments, the crystallization process of the mixture is stirred dynamic crystallization. In some embodiments, the stirring speed is 30 rpm - 400 rpm, for example, 50 rpm, 100 rpm, 150 rpm, 200 rpm, 250 rpm, 300 rpm, or 350 rpm. In some embodiments, the crystallization conditions of the mixture are crystallization at 130°C - 180°C, for example, 135°C, 140°C, 145°C, 150°C, 155°C, 160°C, 165°C, 170°C, or 175°C for 1 - 12 days, for example, 2 days, 3 days, 4 days, 5 days, 6 days, 7 days, 8 days, 9 days, 10 days, or 11 days. In some embodiments, the crystallization conditions of the mixture are crystallization at 135°C - 175°C for 2 - 11 days. In some embodiments, the crystallization conditions of the mixture are crystallization at 140°C - 170°C for 3 - 10 days. In some embodiments, the temperature of the hydrothermal treatment is 80°C - 190°C, for example, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C, 170°C, or 180°C. In some embodiments, the time of the hydrothermal treatment is 5 h - 48 h, for example, 8 h, 10 h, 12 h, 15 h, 20 h, 24 h, 28 h, 30 h, 32 h, 36 h, 40 h, 44 h, or 46 h. In some embodiments, the temperature of the calcination is 400°C - 800°C, for example, 450°C, 500°C, 550°C, 600°C, 650°C, 700°C, or 750°C. In some embodiments, the temperature of the calcination is 500°C - 700°C. In some embodiments, the calcination time is 2 h - 10 h, such as 3 h, 4 h, 5 h, 6 h, 7 h, 8 h or 9 h. In some embodiments, the calcination time is 3 h - 9 h. In some embodiments, the calcination is carried out in an oxygen-containing atmosphere. In some embodiments, the calcination conditions of the hydrothermal treatment product are calcination for 2 - 10 hours in an oxygen-containing atmosphere at 400°C - 800°C, preferably calcination for 3 - 9 hours in an oxygen-containing atmosphere at 500°C - 700°C. According to the present invention, the various obtained SCM-53 molecular sieves can be applied in any physical form, such as powder form, granular form or molded product form (such as strip form, clover form, etc.). These physical forms can be obtained in any manner conventionally known in the art, and there is no particular limitation. In a fifth aspect, the present invention provides a molecular sieve composition comprising the SCM-53 molecular sieve of the present invention, particularly the SCM-53 molecular sieve described in the first or third aspect, or the SCM-53 molecular sieve prepared according to the preparation method of the present invention, particularly the SCM-53 molecular sieve prepared according to the preparation method described in the second or fourth aspect, and optionally a binder. According to the present invention, the SCM-53 molecular sieve can be used in combination with other materials to obtain an SCM-53 molecular sieve composition. As these other materials, for example, active materials and inactive materials can be cited. As the active materials, for example, synthetic zeolites, natural zeolites or other types of molecular sieves, etc. can be cited. As the inactive materials (generally called binders), for example, clay, clay, silica gel and alumina, etc. can be cited. These other materials can be used alone or in combination of multiple kinds in any proportion. As the dosage of these other materials, the conventional dosage in the art can be directly referred to, and there is no particular limitation. In a sixth aspect, the present invention provides the application of the SCM-53 molecular sieve of the present invention, particularly the SCM-53 molecular sieve described in the first or third aspect, or the SCM-53 molecular sieve prepared according to the preparation method of the present invention, particularly the SCM-53 molecular sieve prepared according to the preparation method described in the second or fourth aspect, or the molecular sieve composition described in the fifth aspect in adsorption separation, ion exchange or catalytic conversion of organic compounds, or using the SCM-53 molecular sieve or the molecular sieve composition in an adsorption separation, ion exchange or catalytic conversion method of organic compounds. In some embodiments, the SCM-53 zeolite or zeolite composition is used to separate at least one component from a mixture of multiple components in the gas phase or liquid phase. Accordingly, the at least one component can be partially or substantially completely separated from the mixture of various components, for example, by contacting the mixture with the SCM-53 zeolite or the zeolite composition and selectively adsorbing this component. The SCM-53 zeolite involved in the present invention has a new framework structure and / or chemical composition, and has very important application value. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an X-ray diffraction pattern (XRD) of the sample in Example 1; FIG. 2 is a schematic structural diagram of the crystal structure (two by two by two unit cells) of the sample in Example 1 projected along a)

[0100] 、b)

[0010] , c)

[0110] , and d)

[0010] directions; FIG. 3 is a) the natural patch composition and b) the natural patches included in the crystal topology of the sample in Example 1; FIG. 4 is a scanning electron micrograph (SEM) of the sample in Example 1; FIG. 5 is an N2 adsorption-desorption isotherm curve of the sample in Example 1; FIG. 18 is an X-ray diffraction pattern (XRD) of the sample in Example 2; FIG. 7 is a scanning electron micrograph (SEM) of the sample in Example 2. FIG. 8 is an X-ray diffraction pattern (XRD) of the sample in Example 1'; FIG. 9 is a scanning electron micrograph (SEM) of the sample in Example 1'; FIG. 10 is an N2 adsorption-desorption curve of the sample in Example 1'; FIG. 11 is of the sample in Example 1' 27 27Al NMR spectrum; FIG. 12 is of the sample in Example 1' 29 29Si NMR spectrum; FIG. 13 is an X-ray diffraction pattern (XRD) of the sample in Example 2'; FIG. 14 is a scanning electron micrograph (SEM) of the sample in Example 2'; FIG. 15 is an X-ray diffraction pattern (XRD) of the sample in Example 3'; FIG. 16 is a scanning electron micrograph (SEM) of the sample in Example 3'. FIG. 17 is an X-ray diffraction pattern (XRD) of the sample in Comparative Example 1 [[ID=4,5]] FIG. 18 is an X-ray diffraction pattern (XRD) of the sample in Comparative Example 2 DETAILED DESCRIPTION OF THE EMBODIMENTS The following is a detailed description of the specific embodiments of the present invention. However, it should be noted that the protection scope of the present invention is not limited by these specific embodiments. All publications, patent applications, patents, and other references mentioned in this application are hereby incorporated by reference. Unless otherwise defined, all technical and scientific terms used in this application have the meanings commonly understood by those skilled in the art. In case of conflict, the definitions in this application shall prevail. When this application uses prefixes such as "well-known to those skilled in the art", "prior art", or similar terms to introduce materials, substances, methods, steps, devices, or components, etc., the objects introduced by such prefixes cover those commonly used in the art at the time when this application is proposed, but also include those that are not commonly used at present but will become recognized by the art as suitable for similar purposes. In the context of this application, except for the explicitly stated content, any matters or things not mentioned shall directly apply to those known in the art without any change. Moreover, any embodiment described in this application can be freely combined with one or more other embodiments described in this application, and the technical solutions or technical ideas thus formed shall be regarded as part of the original disclosure or original record of the present invention, and should not be regarded as new content not disclosed or anticipated herein, unless those skilled in the art consider such combination to be obviously unreasonable. In the context of this application, in the XRD data of the molecular sieve, w, m, s, vs represent the diffraction peak intensities. w is weak, m is medium, s is strong, and vs is very strong, which is well-known to those skilled in the art. Generally speaking, w represents a relative intensity of less than 20, such as 5, 7, 10, 11, 12, 13, 14, 15, 16, 17, 18, or 19; m represents a relative intensity of 20 - 40, such as 21, 23, 25, 27, 29, 30, 31, 33, 35, 37, or 39; s represents a relative intensity of 40 - 70, such as 41, 43, 45, 47, 49, 50, 51, 53, 55, 57, 59, 60, 61, 63, 65, 67, or 69; vs represents a relative intensity of greater than 70, such as 75, 80, 85, 90, 95, or 100. In the context of this application, the structure of the molecular sieve is determined by the X-ray diffraction pattern (XRD), and the X-ray diffraction pattern (XRD) is measured by an X-ray powder diffractometer using a Cu-Kα ray source and a nickel filter. Before the sample test, the crystallization of the molecular sieve precursor sample is observed by a scanning electron microscope (SEM) to confirm that the sample contains only one kind of crystal, that is, the molecular sieve sample is a pure phase. On this basis, the XRD test is carried out to ensure that there are no interference peaks of other crystals in the diffraction peaks of the XRD pattern. In the context of the present application, the type and composition of the natural tiling blocks of the framework structure topology of the molecular sieve are analyzed using TOPOS topology software, the pictures of the natural tiling blocks are drawn using 3dt software, and the unit cell parameters of the molecular sieve are obtained by Pawley fit of the powder XRD pattern. In the context of the present application, including in the following examples and comparative examples, the model of the X-ray powder diffractometer for the molecular sieve is the Panalytical X PERPRO type X-ray powder diffractometer, for analyzing the phase of the sample, with a CuKα ray source Nickel filter, 2θ scanning range 2° - 50°, operating voltage 40 KV, current 40 mA, scanning rate 10° / min. In some embodiments, the SCM-53 molecular sieve of the present invention has an X-ray diffraction pattern shown in FIG. 1 or FIG. 6, or FIG. 8, FIG. 13 or FIG. 15. In some embodiments, the framework structure topology of the SCM-53 molecular sieve of the present invention contains natural tiling blocks as shown in FIG. 3b. In some embodiments, the framework structure topology of the SCM-53 molecular sieve of the present invention has a repeating unit as shown in FIG. 3a. In the context of the present application, including in the following examples and comparative examples, the model of the scanning electron microscope (SEM) for the molecular sieve is the S-4800II type field emission scanning electron microscope. The molecular sieve is observed using this scanning electron microscope at a magnification of 40,000 times. A random observation field of view is selected, and the average value of the sum of the thicknesses of all the crystals in this observation field of view is calculated. This operation is repeated a total of 10 times. The average value of the sum of the 10 times is taken as the crystal thickness, and the size of all the aggregates in this observation field of view is measured by the same method. All aggregates. In the context of the present application, including in the following examples and comparative examples, the model of the inductively coupled plasma atomic emission spectrometer (ICP) for the molecular sieve is Varian 725-ES. The analysis sample is dissolved with hydrofluoric acid to detect the content of the elements, in moles. In the context of the present application, the so-called specific surface area refers to the total area per unit mass of the sample, including the internal surface area and the external surface area. Non-porous samples only have an external surface area, such as Portland cement, some clay mineral powders, etc.; porous and multi-porous samples have an external surface area and an internal surface area, such as asbestos fibers, diatomaceous earth, and molecular sieves, etc. For porous and multi-porous samples, the surface area of pores with a pore diameter less than 2 nanometers is the internal surface area, and the surface area after deducting the internal surface area is called the external surface area. The external surface area per unit mass of the sample is the external specific surface area. In the context of the present application, the so-called pore volume refers to the volume of pores possessed by a unit mass of porous material. The so-called total pore volume refers to the volume of all pores (generally only pores with a pore diameter less than 50 nm are counted) possessed by a unit mass of molecular sieve. The so-called micropore volume refers to the volume of all micropores (generally pores with a pore diameter less than 2 nm) possessed by a unit mass of molecular sieve. The pore structure parameters of the molecular sieve, such as total pore volume, micropore volume, total specific surface area, and external specific surface area, are obtained by measuring the nitrogen physical adsorption and desorption isotherm of the molecular sieve with a physical adsorption instrument (such as the TriStar 3000 physical adsorption instrument of Micromeritics Instrument Corporation of the United States), and then calculating through the BET method and t-plot method. The experimental conditions for nitrogen physical adsorption and desorption are: measurement temperature -169 °C, and the molecular sieve is pretreated in vacuum at 300 °C for 10 hours before measurement. The technical solutions of the present invention will be further described in detail below through examples, but the protection scope of the present invention is not limited to these examples. In the present invention, the 2,2-dimethyl-1,3-dihydroisoindole ammonium hydroxide solution is prepared by the following method: Mix 6.7336 g of 1,2-bis(bromomethyl)benzene, 3.4551 g of anhydrous potassium carbonate (acid-binding agent), and 100 mL of N,N-dimethylformamide, stir evenly at a rotation speed of 1000 rpm, and while stirring, heat up to 60 °C under a reflux device, then add 12.5 mL of dimethylamine (tetrahydrofuran solution of dimethylamine, 2 M solution in THF) dropwise to the system under constant pressure, and control the dropping speed at 3 - 4 seconds per drop. The final material ratio (molar ratio) in the reaction system is: anhydrous potassium carbonate / 1,2-bis(bromomethyl)benzene = 1, dimethylamine / 1,2-bis(bromomethyl)benzene = 1, N,N-dimethylformamide / 1,2-bis(bromomethyl)benzene = 51.7. After the dropping is completed, continue refluxing for 8 hours, let it stand to room temperature to obtain a reaction mixture. Filter and separate the reaction mixture to remove the solid acid-binding agent and some by-products, and the liquid part is recovered most of the N,N-dimethylformamide by reduced pressure distillation for repeated use. For the remaining mother liquor, recrystallize it multiple times with a tetrahydrofuran solution and dry it to obtain a nitrogen-containing heterocyclic quaternary ammonium salt using 1,2-bis(bromomethyl)benzene as the raw material. Stir 0.1 mol of the nitrogen-containing heterocyclic quaternary ammonium salt, an appropriate amount of deionized water, and 100 g of anionic resin at room temperature for 12 h, and filter to obtain 2,2-dimethyl-1,3-dihydroisoindole ammonium hydroxide solution. Example 1 35.17 g of deionized water, 155.1 g of 2,2-dimethyl-1,3-dihydroisoindole ammonium hydroxide solution (containing 17 wt% of OSDA (organic structure directing agent) 2,2-dimethyl-1,3-dihydroisoindole ammonium hydroxide), 75.11 g of silica sol (containing 40 wt% of SiO₂), and 1.758 g of aluminum hydroxide were mixed evenly. After stirring at room temperature for 10 hours, a mixture was obtained. The final material ratio (molar ratio) was: Al₂O₃ / SiO₂ = 0.02, OSDA / SiO₂ = 0.32, H₂O / SiO₂ = 40. The mixture prepared above was loaded into a stainless-steel autoclave and crystallized for 3 days under the conditions of 160 °C and rotation at 30 rpm. After crystallization, centrifugation and washing were carried out until the pH value was nearly neutral (pH = 7 - 8), and then dried in an oven at 110 °C to obtain a precursor. The precursor prepared above was subjected to silylation treatment. 10 g of the precursor, 400 mL of 2 mol / L nitric acid solution, and 3 g of dimethylethoxysilane were mixed and stirred at room temperature for 0.5 h. The mixed solution was hydrothermally treated at 170 °C for 24 hours, and finally calcined in an oxygen-containing atmosphere at 550 °C for 6 hours to obtain 16.5 g of a sample. The XRD pattern of the sample is shown in Figure 1 and Table 1, and it is SCM-53 zeolite. The yield of the zeolite is 55 wt%. The structural information of the sample determined by synchrotron radiation XRD is shown in Figure 2, Table 2, and Table 3. The information of hydrogen atoms is omitted in the sample structure information table. The natural patchwork composition of the sample is shown in Figure 3. It can be seen from Figure 2 that the sample contains a zeolite with a two-dimensional 10×10 ring pore system, and there are 4-membered rings, 5-membered rings, 6-membered rings, 7-membered rings, and 10-membered rings in the sample structure. It can be seen from Figure 3b that the framework structure topology of the sample contains [4 2 ·5 4 ·10 4 , [5 2 ·6·10 2 , [4·5 4 ·6 5 ·7 4 , and [6·7 2 natural patches. It can be seen from Figure 3a that the natural patchwork composition of the framework structure topology of the sample contains 1 [4 2 ·5 4 ·10 4 , 2 [5 2 ·6·10 2 , 2 [4·5 4 ·6 5 ·7 4 , and 4 [6·7 2. The SEM image of the sample is shown in Figure 4, presenting a nano-sheet morphology. The N2 adsorption-desorption isotherm curve of the obtained sample is shown in Figure 5. The specific surface area of the sample is 170 m 2 / g, and the total pore volume is 0.17 cm 3 / g. The silicon-aluminum molar ratio of the sample measured by inductively coupled plasma atomic emission spectrometry (ICP) is 76.89SiO2·Al2O3. Table 1 Table 2 Table 3 Example 2 22.1 g of deionized water, 242.5 g of 2,2-dimethyl-1,3-dihydroisoindole ammonium hydroxide solution (containing 33 wt% of OSDA 2,2-dimethyl-1,3-dihydroisoindole ammonium hydroxide), 75.11 g of silica sol (containing 40 wt% of SiO2), and 4.393 g of aluminum hydroxide were mixed evenly. After stirring at room temperature for 5 hours, a mixture was obtained. The final material ratio (molar ratio) was: Al2O3 / SiO2 = 0.05, OSDA / SiO2 = 0.5, H2O / SiO2 = 30. The above-prepared mixture was loaded into a stainless-steel autoclave and crystallized at 150 °C under a rotation condition of 30 rpm for 4 days. After crystallization, centrifugation and washing were carried out until the pH value was nearly neutral (pH = 7 - 8), and then dried in an oven at 110 °C to obtain a precursor. The above-prepared precursor was subjected to silylation treatment. 10 g of the precursor, 500 mL of 2 mol / L nitric acid solution, and 3 g of dimethylethoxysilane were mixed and stirred at room temperature for 0.5 h. The mixed solution was hydrothermally treated at 160 °C for 28 hours, and finally calcined in an oxygen-containing atmosphere at 550 °C for 5 hours to obtain 18.0 g of the sample. The XRD pattern of the sample is shown in Figure 6 and Table 4. It is SCM-53 zeolite, and the yield of the zeolite is 60 wt%. The SEM image of the sample is shown in Figure 7, presenting a nano-sheet morphology. Table 4 The specific surface area of the obtained sample is 308 m 2 / g, and the total pore volume is 0.22 cm 3 / g. The silicon-aluminum molar ratio of the sample measured by inductively coupled plasma atomic emission spectrometry (ICP) is 43.21SiO2·Al2O3. Example 3 12.9 g of deionized water, 145.5 g of 2,2-dimethyl-1,3-dihydroisoindoline hydroxide solution (containing 17 wt% of OSDA 2,2-dimethyl-1,3-dihydroisoindoline hydroxide), 75.11 g of silica sol (containing 40 wt% of SiO₂), and 3.516 g of aluminum hydroxide were mixed evenly, and a mixture was obtained after stirring at room temperature for 4 hours. The final material ratio (molar ratio) was: Al₂O₃ / SiO₂ = 0.02, OSDA / SiO₂ = 0.3, H₂O / SiO₂ = 20. The mixture prepared above was loaded into a stainless steel autoclave and crystallized at 170 °C and 30 rpm rotation for 3 days. After crystallization, centrifugation and washing were carried out until the pH value was nearly neutral (pH = 7 - 8), and it was dried in an oven at 110 °C to obtain a precursor. The precursor prepared above was subjected to silylation treatment. 10 g of the precursor, 500 mL of 2 mol / L nitric acid solution, and 3.375 g of dimethylethoxysilane were mixed and stirred at room temperature for 0.5 h. The mixed solution was hydrothermally treated at 150 °C for 24 hours, and finally calcined in an oxygen-containing atmosphere at 550 °C for 5 hours to obtain 17.4 g of a sample. The XRD pattern of the sample is shown in Table 5, which is SCM-53 zeolite, and the yield of the zeolite is 58 wt%. The SEM image of the sample is similar to Figure 4, and it has a nano-sheet morphology. Table 5 The specific surface area of the obtained sample is 328 m 2 / g, and the total pore volume is 0.25 cm 3 / g. The silicon-aluminum molar ratio of the sample was measured by inductively coupled plasma atomic emission spectrometry (ICP) to be 75.01SiO₂·Al₂O₃. Example 4 16.8 g of deionized water, 15.00 g of 2,2-dimethyl-1,3-dihydroisoindoline hydroxide solution (containing 17 wt% of OSDA 2,2-dimethyl-1,3-dihydroisoindoline hydroxide), 15.02 g of silica sol (containing 40 wt% of SiO₂), and 0.352 g of aluminum hydroxide were mixed evenly, and a mixture was obtained after stirring at room temperature for 6 hours. The final material ratio (molar ratio) was: Al₂O₃ / SiO₂ = 0.01, OSDA / SiO₂ = 0.4, H₂O / SiO₂ = 30. The mixture prepared above was loaded into a stainless steel autoclave and crystallized at 140 °C and 30 rpm rotation for 5 days. After crystallization, centrifugation and washing were carried out until the pH value was nearly neutral (pH = 7 - 8), and it was dried in an oven at 110 °C to obtain a precursor. The precursor prepared above was subjected to silylation treatment. 10 g of the precursor, 400 mL of 2.5 mol / L nitric acid solution and 2.275 g of dimethylethoxysilane were mixed and stirred at room temperature for 0.5 h. The mixed solution was hydrothermally treated at 190 °C for 5 h, and finally calcined in an oxygen-containing atmosphere at 600 °C for 6 h to obtain 3.2 g of the sample. The XRD pattern of the sample was similar to that in Table 6, and it was SCM-53 zeolite. The yield of the zeolite was 54 wt%. The SEM image of the sample was similar to Figure 4, and it had a nano-sheet morphology. Table 6 The specific surface area of the obtained sample was 288 m 2 / g, and the total pore volume was 0.21 cm 3 / g. The silicon-aluminum molar ratio of the sample measured by inductively coupled plasma atomic emission spectrometry (ICP) was 105.21SiO2·Al2O3. Example 5 5.1 g of deionized water, 58.196 g of 2,2-dimethyl-1,3-dihydroisoindole ammonium hydroxide solution (containing 17 wt% of OSDA 2,2-dimethyl-1,3-dihydroisoindole ammonium hydroxide), 30.045 g of silica sol (containing 40 wt% of SiO2), and 1.5 g of aluminum nitrate were mixed evenly. After stirring at room temperature for 10 h, a mixture was prepared. The final material ratio (molar ratio) was: Al2O3 / SiO2 = 0.01, OSDA / SiO2 = 0.3, H2O / SiO2 = 20. The mixture prepared above was loaded into a stainless steel autoclave and crystallized at 160 °C and 30 rpm for 3 days. After crystallization, centrifugation and washing were carried out until the pH value was nearly neutral (pH = 7 - 8), and then dried in an oven at 110 °C to obtain the precursor. The precursor prepared above was subjected to silylation treatment. 10 g of the precursor, 400 mL of 2 mol / L nitric acid solution and 3 g of dimethylethoxysilane were mixed and stirred at room temperature for 0.5 h. The mixed solution was hydrothermally treated at 170 °C for 24 h, and finally calcined in an oxygen-containing atmosphere at 550 °C for 6 h to obtain 8.4 g of the sample. The XRD pattern of the sample was as shown in Table 7, and it was SCM-53 zeolite. The yield of the zeolite was 70 wt%. The SEM image of the sample was similar to Figure 4, and it had a nano-sheet morphology. Table 7 The specific surface area of the obtained sample was 301 m 2 / g, and the total pore volume was 0.22 cm 3 / g. The silicon-aluminum molar ratio of the sample measured by inductively coupled plasma atomic emission spectrometry (ICP) is 101.89SiO2·Al2O3. Example 6 35.17 g of deionized water, 58.196 g of 2,2-dimethyl-1,3-dihydroisoindole ammonium hydroxide solution (containing 17 wt% of OSDA 2,2-dimethyl-1,3-dihydroisoindole ammonium hydroxide), 41.67 g of tetraethyl orthosilicate (containing 28.8 wt% of SiO2), and 0.409 g of aluminum isopropoxide were mixed evenly. After stirring at room temperature for 10 hours, a mixture was obtained. The final material ratio (molar ratio) was: Al2O3 / SiO2 = 0.01, OSDA / SiO2 = 0.3, H2O / SiO2 = 20. The mixture prepared above was loaded into a stainless steel autoclave and crystallized at 160 °C and 30 rpm rotation for 3 days. After crystallization, centrifugation and washing were carried out until the pH value was nearly neutral (pH = 7 - 8), and drying was performed in an oven at 110 °C to obtain a precursor. The precursor prepared above was subjected to silylation treatment. 10 g of the precursor, 400 mL of 2 mol / L nitric acid solution, and 3 g of dimethylethoxysilane were mixed and stirred at room temperature for 0.5 h. The mixed solution was hydrothermally treated at 170 °C for 24 hours, and finally calcined in an oxygen-containing atmosphere at 550 °C for 6 hours to obtain 8.64 g of a sample. The XRD pattern of the sample is shown in Table 8, which is SCM-53 zeolite, and the yield of the zeolite is 72 wt%. The SEM image of the sample is similar to Figure 4 and is a nano-sheet morphology. Table 8 The specific surface area of the obtained sample is 288 m 2 / g, and the total pore volume is 0.20 cm 3 / g. The silicon-aluminum molar ratio of the sample measured by inductively coupled plasma atomic emission spectrometry (ICP) is 103.8SiO2·Al2O3. In the present invention, the preparation of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide adopts the following method: Preparation Example 1': Preparation of 0.01 mol (98 wt%, 4.59 g) of 1,2,4,5-tetrakis(bromomethyl)benzene (CAS: 15442-91-8) was mixed with 300 mL of N,N-dimethylformamide (DMF) solvent, and 0.02 mol (98 wt%, 4.59 g) of anhydrous potassium carbonate was added as an acid-binding agent, and the mixture was stirred evenly at 1000 - 1500 rpm. Under a reflux device, the temperature was raised to 60 - 65 °C while stirring, and then 0.02 mol (10 mL) of dimethylamine (tetrahydrofuran solution of dimethylamine, 2 M) was added dropwise to the system under constant pressure, controlling the dropping rate at 3 - 4 seconds per drop. After the dropping was completed, reflux was continued for 6 - 8 hours, and the mixture was allowed to stand to room temperature to obtain a reaction mixture. The reaction mixture was cooled to 0 °C, then filtered and separated, and the filtrate was distilled under reduced pressure. The concentrated solution was recrystallized with acetone, filtered and dried to obtain the target product, a nitrogen-containing heterocyclic quaternary ammonium salt: The yield was 67.7%. Preparation Example 2': Preparation of The nitrogen-containing heterocyclic quaternary ammonium salt (0.1 mol) obtained according to Preparation Example 1', water (125 g), and anionic resin (200 g) were stirred at room temperature for 12 h, and after filtration, 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide solution was obtained. Example 1' 34.892 g of deionized water, 20.16 g of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide solution (containing 20 wt% of OSDA 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide), 30.045 g of silica sol (containing 40 wt% of SiO₂), and 7.0317 g of aluminum hydroxide were mixed evenly, and after stirring at room temperature for 8 h, a mixture was obtained. The final material ratio (molar ratio) was: Al₂O₃ / SiO₂ = 0.2, OSDA / SiO₂ = 0.08, H₂O / SiO₂ = 20. The mixture prepared above was loaded into a stainless steel autoclave and crystallized at 150 °C and 30 rpm rotation for 7 days. After crystallization, centrifugation and washing were carried out until the pH value was nearly neutral (pH = 7 - 8), and drying was carried out in an oven at 100 °C to obtain a precursor. The precursor prepared above was subjected to silylation treatment. 10 g of the precursor, 500 mL of 2 mol / L nitric acid solution and 6 g of tetramethoxysilane were mixed and stirred at room temperature for 1 h. The mixed solution was hydrothermally treated at 170 °C for 24 h, and finally calcined in an oxygen-containing atmosphere at 550 °C for 6 h to obtain 5.3 g of a sample. The XRD pattern of the sample is shown in Figure 8 and Table 1', and it is SCM-53 zeolite. The yield of the zeolite is 53 wt%. The SEM image of the sample is shown in Figure 9, and it has a nano-sheet morphology. The N2 adsorption-desorption isotherm curve of the obtained sample is shown in Figure 10. The specific surface area of the sample is 350 m 2 / g, and the total pore volume is 0.30 cm 3 / g. The 27 27Al NMR spectrum of the sample is shown in Figure 11, 29 and the 29Si NMR spectrum is shown in Figure 12. The silicon-aluminum molar ratio of the sample was measured by inductively coupled plasma atomic emission spectrometry (ICP) to be 41.5SiO2·Al2O3. Table 1' Example 2' 56.780 g of deionized water, 37.8 g of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole hydroxide solution (containing 20 wt% of OSDA 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole hydroxide), 30.045 g of silica sol (containing 40 wt% of SiO2), and 7.0317 g of aluminum hydroxide were mixed evenly. After stirring at room temperature for 7 h, a mixture was obtained. The final material ratio (molar ratio) was: Al2O3 / SiO2 = 0.2, OSDA / SiO2 = 0.15, H2O / SiO2 = 30. The mixture prepared above was loaded into a stainless steel autoclave and crystallized at 160 °C and 35 rpm rotation for 5 days. After crystallization, centrifugation and washing were carried out until the pH value was nearly neutral (pH = 7 - 8), and then dried in an oven at 120 °C to obtain a precursor. The precursor prepared above was subjected to silylation treatment. 10 g of the precursor, 500 mL of 2 mol / L nitric acid solution and 7.5 g of tetramethoxysilane were mixed and stirred at room temperature for 1.0 h. The mixed solution was hydrothermally treated at 170 °C for 24 h, and finally calcined in an oxygen-containing atmosphere at 550 °C for 5 h to obtain 5.8 g of a sample. The XRD pattern of the sample is shown in Figure 13 and Table 2', and it is SCM-53 zeolite. The yield of the zeolite is 58 wt%. The SEM image of the sample is shown in Figure 14, presenting a nano-sheet morphology. Table 2' The specific surface area of the obtained sample is 358 m 2 / g, and the total pore volume is 0.31 cm 3 / g. The Si / Al molar ratio of the sample measured by inductively coupled plasma atomic emission spectrometry (ICP) is 36.5 SiO2·Al2O3. Example 3' 62.540 g of deionized water, 75.6 g of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole hydroxide solution (containing 20 wt% of OSDA 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole hydroxide), 30.045 g of silica sol (containing 40 wt% of SiO2), and 7.0317 g of aluminum hydroxide were mixed uniformly. After stirring at room temperature for 6 hours, a mixture was obtained. The final material ratio (molar ratio) was: Al2O3 / SiO2 = 0.2, OSDA / SiO2 = 0.3, H2O / SiO2 = 40. The above-prepared mixture was loaded into a stainless-steel autoclave and crystallized at 160 °C under a rotation condition of 35 rpm for 4 days. After crystallization, centrifugation and washing were carried out until the pH value was nearly neutral (pH = 7 - 8), and then dried in an oven at 100 °C to obtain a precursor. The above-prepared precursor was subjected to silylation treatment. 10 g of the precursor, 500 mL of 2 mol / L nitric acid solution, and 4.5 g of tetramethoxysilane were mixed and stirred at room temperature for 1.0 h. The mixed solution was hydrothermally treated at 165 °C for 24 hours, and finally calcined in an oxygen-containing atmosphere at 550 °C for 6 hours to obtain 5.6 g of a sample. The XRD pattern of the sample is shown in Figure 15 and Table 3', which is SCM-53 zeolite, and the yield of the zeolite is 56 wt%. The SEM image of the sample is shown in Figure 16, presenting a nano-sheet morphology. Table 3' The specific surface area of the obtained sample is 398 m 2 / g, and the total pore volume is 0.32 cm 3 / g. The Si / Al molar ratio of the sample measured by inductively coupled plasma atomic emission spectrometry (ICP) is 38.9 SiO2·Al2O3. Example 4' 36.368 g of deionized water, 20.16 g of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide solution (containing 20 wt% of OSDA 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide), 30.045 g of silica sol (containing 40 wt% of SiO₂), and 3.516 g of aluminum hydroxide were mixed evenly. After stirring at room temperature for 7 hours, a mixture was obtained. The final material ratio (molar ratio) was: Al₂O₃ / SiO₂ = 0.1, OSDA / SiO₂ = 0.08, H₂O / SiO₂ = 20. The mixture prepared above was loaded into a stainless-steel autoclave and crystallized at 130 °C under a rotation condition of 30 rpm for 9 days. After crystallization, centrifugation and washing were carried out until the pH value was nearly neutral (pH = 7 - 8), and then dried in an oven at 110 °C to obtain a precursor. The precursor prepared above was subjected to silylation treatment. 10 g of the precursor, 400 mL of 2.5 mol / L nitric acid solution, and 6 g of tetramethoxysilane were mixed and stirred at room temperature for 0.5 h. The mixed solution was hydrothermally treated at 170 °C for 32 hours, and finally calcined in an oxygen-containing atmosphere at 600 °C for 6 hours to obtain 6.0 g of a sample. The XRD pattern of the sample was similar to that in Table 4', and it was SCM-53 zeolite. The yield of the zeolite was 60 wt%. The SEM image of the sample was similar to Figure 9, and it had a nano-sheet morphology. Table 4' The specific surface area of the obtained sample was 378 m 2 / g, and the total pore volume was 0.32 cm 3 / g. The silicon-aluminum molar ratio of the sample was measured by inductively coupled plasma atomic emission spectrometry (ICP) to be 58.7SiO₂·Al₂O₃. Example 5' 83.483 g of deionized water, 37.8 g of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide solution (containing 20 wt% of OSDA 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide), 41.667 g of tetraethyl orthosilicate (containing 28.8 wt% of SiO₂), and 3.516 g of aluminum hydroxide were mixed evenly. After stirring at room temperature for 8 hours, a mixture was obtained. The final material ratio (molar ratio) was: Al₂O₃ / SiO₂ = 0.1, OSDA / SiO₂ = 0.15, H₂O / SiO₂ = 30. Load the mixture prepared above into a stainless steel reactor and crystallize it for 6 days under the conditions of 150 °C and 30 rpm rotation. After crystallization, centrifuge and wash until the pH value is nearly neutral (pH = 7 - 8), and dry it in an oven at 110 °C to obtain the precursor. Perform a silylation treatment on the precursor prepared above. Mix 10 g of the precursor, 400 mL of 2 mol / L nitric acid solution, and 7.5 g of tetramethoxysilane, and stir at room temperature for 0.5 h. Hydrothermally treat the mixed solution at 170 °C for 24 hours, and finally calcine it in an oxygen-containing atmosphere at 550 °C for 6 hours to obtain 5.9 g of the sample. The XRD pattern of the sample is shown in Table 5', and it is SCM-53 zeolite. The yield of the zeolite is 59 wt%. The SEM image of the sample is similar to Figure 9, and it has a nano-sheet morphology. Table 5' The specific surface area of the obtained sample is 401 m 2 / g, and the total pore volume is 0.34 cm 3 / g. The silicon-aluminum molar ratio of the sample measured by inductively coupled plasma atomic emission spectrometry (ICP) is 61.1SiO2·Al2O3. Example 6' Mix 50.426 g of deionized water, 75.6 g of 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide solution (containing 20 wt% of OSDA 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindole ammonium hydroxide), 12.018 g of fumed silica (containing 100 wt% of SiO2), and 2.734 g of alumina evenly. After stirring at room temperature for 8 hours, a mixture is prepared. The final material ratio (molar ratio) is: Al2O3 / SiO2 = 0.1, OSDA / SiO2 = 0.3, H2O / SiO2 = 40. Load the mixture prepared above into a stainless steel reactor and crystallize it for 3 days under the conditions of 150 °C and 35 rpm rotation. After crystallization, centrifuge and wash until the pH value is nearly neutral (pH = 7 - 8), and dry it in an oven at 110 °C to obtain the precursor. Perform a silylation treatment on the precursor prepared above. Mix 10 g of the precursor, 400 mL of 2 mol / L nitric acid solution, and 4.75 g of tetramethoxysilane, and stir at room temperature for 1.0 h. Hydrothermally treat the mixed solution at 170 °C for 32 hours, and finally calcine it in an oxygen-containing atmosphere at 550 °C for 6 hours to obtain 5.8 samples. The XRD pattern of the sample is shown in Table 6', and it is SCM-53 zeolite. The yield of the zeolite is 58 wt%. The SEM image of the sample 9 is similar to Figure 6', showing a nano-sheet morphology. Table 6' The specific surface area of the obtained sample is 389 m 2 / g, and the total pore volume is 0.33 cm 3 / g. The silicon-aluminum molar ratio of the sample was measured by inductively coupled plasma atomic emission spectrometry (ICP) to be 59.8SiO2·Al2O3. Comparative Example 1: (Without adding a structure-directing agent) The difference from Example 1 is that there is no structure-directing agent, and other steps are the same as in Example 1. The feeding steps of the materials are as follows: 35.17 g of deionized water, 75.11 g of silica sol (containing 40 wt% SiO2), and 1.758 g of aluminum hydroxide were mixed evenly, and the mixture was prepared by stirring at room temperature for 10 hours. The final material ratio (molar ratio) was: Al2O3 / SiO2 = 0.02, H2O / SiO2 = 40. The above-prepared mixture was loaded into a stainless steel autoclave and crystallized at 160 °C and 30 rpm rotation for 3 days. After crystallization, centrifugation and washing were carried out until the pH value was nearly neutral (pH = 7 - 8), and the precursor was dried in an oven at 110 °C. The above-prepared precursor was subjected to silylation treatment. 10 g of the precursor, 400 mL of 2 mol / L nitric acid solution, and 3 g of dimethylethoxysilane were mixed and stirred at room temperature for 0.5 h. The mixed solution was hydrothermally treated at 170 °C for 24 hours, and finally calcined in an oxygen-containing atmosphere at 550 °C for 6 hours to obtain 16.5 g of the sample. The XRD pattern of the sample is shown in Figure 17, indicating that the obtained sample is not the SCM-53 molecular sieve of the present invention. Comparative Example 2: (Without silylation reagent treatment) The difference from Example 1 is that there is no silylation reagent treatment, and other steps are the same as in Example 1. The feeding steps of the materials are as follows: 35.17 g of deionized water, 155.1 g of 2,2-dimethyl-1,3-dihydroisoindole ammonium hydroxide solution (containing 17 wt% OSDA 2,2-dimethyl-1,3-dihydroisoindole ammonium hydroxide), 75.11 g of silica sol (containing 40 wt% SiO2), and 1.758 g of aluminum hydroxide were mixed evenly, and the mixture was prepared by stirring at room temperature for 10 hours. The final material ratio (molar ratio) was: Al2O3 / SiO2 = 0.02, OSDA / SiO2 = 0.32, H2O / SiO2 = 40. The mixture prepared above was loaded into a stainless-steel reactor and crystallized for 3 days under the conditions of 160 °C and rotation at 30 rpm. After crystallization, centrifugation and washing were carried out until the pH value was nearly neutral (pH = 7 - 8), and then dried in an oven at 110 °C to obtain a precursor. Finally, it was calcined in an oxygen-containing atmosphere at 550 °C for 6 hours to obtain 16.5 g of the sample. The XRD pattern of the sample is shown in Figure 18, indicating that the obtained sample is not the SCM-53 molecular sieve of the present invention. The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited thereto. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solutions of the present invention, including any other suitable combination of each technical feature. These simple modifications and combinations should also be regarded as the content disclosed by the present invention and fall within the protection scope of the present invention.

Claims

1. A silicoaluminate SCM-53 molecular sieve, characterized in that, The X-ray diffraction pattern of the SCM-53 molecular sieve includes a diffraction peak at 2θ of 4.292° ± 0.40°, and optionally also includes one or more of the diffraction peaks at 2θ of 8.805° ± 0.50°, 12.119° ± 0.40°, and 26.036° ± 0.40°.

2. The SCM-53 molecular sieve according to claim 1, wherein The X-ray diffraction pattern of the SCM-53 molecular sieve further includes one or more of the diffraction peaks at 2θ of 14.322° ± 0.50°, 18.385° ± 0.540°, and 22.998° ± 0.40°.

3. The SCM-53 molecular sieve according to claim 1 or 2, characterized in that the diffraction peak intensity at 2θ of 4.292° ± 0.40° and / or 26.036° ± 0.40° is greater than the diffraction peak intensity at 2θ of 8.805° ± 0.50° and / or 12.119° ± 0.40°; and / or the diffraction peak intensity at 2θ of 4.292° ± 0.40° is greater than the diffraction peak intensity at 2θ of 26.036° ± 0.40°, or the diffraction peak intensity at 2θ of 4.292° ± 0.40° is less than the diffraction peak intensity at 2θ of 26.036° ± 0.40°; and / or the diffraction peak at 2θ of 4.292° ± 0.40° or 26.036° ± 0.40° is the strongest peak.

4. The SCM-53 molecular sieve according to any one of claims 1-3, characterized in that, The X-ray diffraction pattern of the SCM-53 molecular sieve includes (i) a diffraction peak at 2θ of 4.363° ± 0.30°, and optionally also includes one or more of the diffraction peaks at 2θ of 8.940° ± 0.30°, 12.08° ± 0.30°, and 26.09° ± 0.30°, or (ii) a diffraction peak at 2θ of 4.221° ± 0.30°, and optionally also includes one or more of the diffraction peaks at 2θ of 8.669° ± 0.30°, 12.158° ± 0.30°, and 25.982° ± 0.30°.

5. The SCM-53 molecular sieve according to claim 4, wherein The X-ray diffraction pattern of the SCM-53 molecular sieve further includes one or more of the diffraction peaks at 2θ of 14.48° ± 0.30°, 18.42° ± 0.50°, and 23.05° ± 0.30° in the case of (i), or further includes one or more of the diffraction peaks at 2θ of 14.164° ± 0.30°, 18.35° ± 0.50°, 22.946° ± 0.30°, and 24.019° ± 0.50° in the case of (ii).

6. The SCM-53 molecular sieve according to claim 4, characterized in that the diffraction peak intensity at 2θ of 4.363° ± 0.30° and / or 26.09° ± 0.30° is greater than the diffraction peak intensity at 2θ of 8.940° ± 0.30° and / or 12.08° ± 0.30°, or the diffraction peak intensity at 2θ of 4.221° ± 0.30° and / or 25.982° ± 0.30° is greater than the diffraction peak intensity at 2θ of 8.669° ± 0.30° and / or 12.158° ± 0.30°; and / or The diffraction peak intensity at 2θ of 4.363° ± 0.30° is greater than that at 2θ of 26.09° ± 0.30°, or the diffraction peak intensity at 2θ of 4.363° ± 0.30° is less than that at 2θ of 26.09° ± 0.30°, or the diffraction peak intensity at 2θ of 4.221° ± 0.30° is greater than that at 2θ of 25.982° ± 0.30°, or the diffraction peak intensity at 2θ of 4.221° ± 0.30° is less than that at 2θ of 25.982° ± 0.30°; and / or The diffraction peak at 2θ of 4.363° ± 0.30° or 26.09° ± 0.30° is the strongest peak, or the diffraction peak at 2θ of 4.221° ± 0.30° or 25.982° ± 0.30° is the strongest peak.

7. The SCM-53 molecular sieve according to any one of claims 1-6, characterized in that, The X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table A or A': Table A Table A' Preferably, the X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table B or B': Table B Table B' 8. The SCM-53 molecular sieve according to any one of claims 1-7, characterized in that, The X-ray diffraction pattern of the SCM-53 molecular sieve includes the diffraction peaks shown in Table C or C': Table C wherein, b: varies with 2θ Table C' wherein, b: varies with 2θ Preferably, the X-ray diffraction pattern of the SCM-53 molecular sieve includes those shown in Table D or D' diffraction peaks: Table D wherein, b: varies with 2θ Table D' wherein, b: varies with 2θ.

9. The SCM-53 molecular sieve according to any one of claims 1-8, characterized in that, The SCM-53 molecular sieve comprises silicon, aluminum and oxygen; and / or In the SCM-53 molecular sieve, the molar ratio of silicon dioxide to aluminum oxide is 10 - 400, preferably 15 - 350, More preferably, the SCM-53 molecular sieve has a chemical composition of mSiO2·Al2O3 with the following molar ratio, wherein, 10 ≤ m ≤ 400, preferably 15 ≤ m ≤ 350, more preferably 20 ≤ m ≤ 300; and / or The crystal of the SCM-53 molecular sieve has a nano-sheet morphology, and the average thickness of the crystal is less than or equal to 19 nm, preferably 3 nm - 18 nm, more preferably 5 nm - 16 nm, or the average thickness of the crystal is less than or equal to 30 nm, preferably 2 nm - 27 nm, more preferably 5 nm - 25 nm, Preferably, in the SCM-53 molecular sieve, the crystals with a thickness less than or equal to 16 nm account for at least 70% of the total number of crystals; and / or The specific surface area of the SCM-53 molecular sieve is 100 m 2 / g - 500 m 2 / g, preferably 200 m 2 / g - 400 m 2 / g or 300 m 2 / g - 450 m 2 / g; and / or The pore volume of the SCM-53 molecular sieve is 0.015 cm 3 / g - 1.0 cm 3 / g, preferably 0.05 cm 3 / g - 0.75 cm 3 / g; and / or The SCM-53 molecular sieve is germanium-free.

10. The SCM-53 molecular sieve according to any one of claims 1-9, characterized in that, The SCM-53 molecular sieve further comprises one or more elements of sodium, potassium, germanium, titanium, boron, zirconium, tin and iron; and / or The framework structure topology of the SCM-53 zeolite contains [4 2 ■5 4 ■10 4 , [5 2 ■6■10 2 , [4■5 4 ■6 5 ■7 4 , and [6■7 2 natural patchwork blocks; and / or The natural patch composition of the framework structure topology of the SCM-53 molecular sieve contains 1 [4 2 ■5 4 ■10 4 , 2 [5 2 ■6■10 2 , 2 [4■5 4 ■6 5 ■7 4 and 4 [6■7 2 ; and / or The SCM-53 molecular sieve includes a two-dimensional 10×10 yuan ring pore structure; and / or One or more of 4-membered rings, 5-membered rings, 6-membered rings, 7-membered rings and 10-membered rings exist in the SCM-53 molecular sieve; and / or The SCM-53 molecular sieve belongs to the monoclinic system, Preferably, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include Preferably More preferably Preferably, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include Preferably More preferably Preferably, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include Preferably More preferably Preferably, the unit cell parameters of the monoclinic system of the SCM-53 molecular sieve include α = 90°, γ = 90°; Preferably, the unit cell parameter of the monoclinic system of the SCM-53 molecular sieve is β = 100° - 125°, preferably β = 105° - 115°.

11. The preparation method of the SCM-53 molecular sieve according to any one of claims 1-10, which comprises the following steps: S1: Crystallizing a mixture containing a silicon source, an aluminum source, an organic structure-directing agent and a solvent to obtain a crystallized solid-phase product; S2: Under acidic conditions, mixing the crystallized solid-phase product with a silylating reagent and then performing hydrothermal treatment to obtain a hydrothermally treated solid-phase product; S3: Drying and calcining the hydrothermally treated solid-phase product.

12. The preparation method according to claim 11, characterized in that, The silicon source is calculated as SiO2, and the aluminum source is calculated as Al2O3. The molar ratio of the silicon source to the aluminum source is 1:(0.0025-0.25), preferably 1:(0.0025-0.2), more preferably 1:(0.0025-0.1) or 1:(0.05-0.2), preferably 1:(0.0025-0.08), more preferably 1:(0.005-0.05); and / or The molar ratio of the silicon source to the organic structure-directing agent is 1:(0.10-0.50), preferably 1:(0.20-0.50), more preferably 1:(0.30-0.50); and / or The molar ratio of the silicon source to the solvent is 1:(8-100), preferably 1:(15-100), more preferably 1:(15-50); and / or The acidic conditions are provided by an acid solution. Preferably, the concentration of the acid solution is 0.5 mol / L - 6 mol / L, preferably 1 mol / L - 5 mol / L, more preferably 1.5 mol / L - 4.5 mol / L. The acid solution is preferably selected from aqueous or ethanol solutions of hydrochloric acid, acetic acid or nitric acid. Preferably, the liquid-solid ratio of the acid solution to the crystallized product is (10-100) mL:1 g, preferably (20-80) mL:1 g, more preferably (40-60) mL:1 g; and / or The mass ratio of the silylating reagent to the crystallized product is (0.1-4):1, preferably (0.2-2.5):1, more preferably (0.2-2):

1.

13. The preparation method according to any one of claims 11-12, characterized in that, The organic structure-directing agent includes a compound represented by Formula I, In formula I, R1 and R2 are the same or different and each independently selected from C 1-8 alkyl, preferably selected from C 1-4 alkyl, more preferably selected from methyl, ethyl or propyl; X - is selected from OH - , a halogen anion, carbonate, nitrate or a monovalent organic acid radical; R3, R4, R5 and R6 are the same or different and each independently selected from hydrogen, halogen, C 1-4 alkyl, preferably selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl or propyl; Preferably, the organic structure-directing agent of formula I is selected from one or more of ammonium 2,2-dimethyl-1,3-dihydroisoindoline hydroxide, ammonium 2,2-dimethyl-1,3-dihydroisoindoline bromide and ammonium 2,2-dimethyl-1,3-dihydroisoindoline chloride; and / or The organic structure-directing agent includes a compound represented by Formula I': In formula I', R'1, R'2, R'3 and R'4 are the same or different and are each independently selected from C 1-8 alkyl, preferably selected from C 1-4 alkyl, more preferably selected from methyl, ethyl or propyl; X' - is selected from OH - , a halogen anion, carbonate, nitrate or a monovalent organic acid radical; R'5 and R'6 are the same or different and are each independently selected from hydrogen, halogen, C 1-4 alkyl, preferably selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl or propyl; Preferably, the organic structure-directing agent of formula I' is selected from one or more of ammonium 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindoline hydroxide, ammonium 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindoline bromide and ammonium 2,2,6,6-tetramethyl-1,2,3,5,6,7-hexahydropyrrolo[3,4-f]isoindoline chloride.

14. The preparation method according to any one of claims 11-13, characterized in that, The silanizing agent includes a compound represented by Formula II In formula II, R7, R8, R9 and R 10 are the same or different and each independently selected from hydrogen, halogen, C 1-6 alkyl, C 1-6 alkoxy, preferably selected from hydrogen, fluorine, chlorine, bromine, methyl, ethyl, propyl, methoxy, ethoxy, propoxy; preferably, R7, R8, R9 and R 10 are the same and are each selected from C 1-4 alkoxy; preferably, the silylating agent is selected from one or more of tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraisopropoxysilane, monomethylchlorosilane, dimethylchlorosilane, monomethylmethoxysilane, dimethylmethoxysilane, monomethylethoxysilane and dimethylethoxysilane.

15. The preparation method according to any one of claims 11-14, characterized in that, The crystallization process of the mixture is dynamic crystallization by rotation or stirring, with a rotation speed of 10 rpm - 60 rpm and a stirring speed of 30 rpm - 400 rpm; the crystallization conditions of the mixture are crystallization at 130°C - 180°C for 1 - 12 days, preferably crystallization at 135°C - 175°C for 2 - 11 days, more preferably crystallization at 140°C - 170°C for 3 - 10 days; and / or The temperature of the hydrothermal treatment is 80°C - 190°C; and / or The time of the hydrothermal treatment is 5 h - 48 h; and / or The temperature of the calcination is 400°C - 800°C, preferably 500°C - 700°C; and / or The time of the calcination is 2 h - 10 h, preferably 3 h - 9 h; and / or The silicon source is selected from one or more of silica sol, silica gel, tetraethyl orthosilicate, fumed silica, and silicic acid; and / or The aluminum source is selected from one or more of aluminum hydroxide, aluminum isopropoxide, aluminum nitrate, and aluminum oxide; and / or The solvent is selected from water; and / or The mixture does not contain alkali metals or alkaline earth metals.

16. A molecular sieve composition comprising the SCM-53 molecular sieve according to any one of claims 1 - 10 or the SCM-53 molecular sieve prepared by the preparation method according to any one of claims 11 - 15, and optionally a binder.

17. Use of the SCM-53 molecular sieve according to any one of claims 1 - 10 or the SCM-53 molecular sieve prepared by the preparation method according to any one of claims 11 - 15 or the molecular sieve composition according to claim 16 in adsorption separation, ion exchange, or catalytic conversion of organic compounds.

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