Low temperature chemical vapor deposition of nanocrystalline diamond film

Abstract

Embodiments include a modular high-frequency emission source for growth of a low roughness nanocrystalline diamond film. In an embodiment, a method of fabricating a nanocrystalline diamond (NCD) film includes loading a substrate such as nanodiamond- seeded silicon wafer or a bare silicon wafer that has been surface-treated and incubated into a microwave plasma- enhanced chemical vapor deposition (MWPECVD) chamber, and processing the nanodiamond- seeded silicon wafer or the bare silicon wafer that has been surface-treated and incubated with a plasma of CxHy (y ≥ x), CO2 and H2, at a temperature less than 300 degrees Celsius, to form a layer of nanocrystalline diamond thereon.

Description

[0001] LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF NANOCRYSTALLINE DIAMOND FILM

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This application claims priority to U.S. Patent Application No. 18 / 423,129, filed on January 25, 2024, the entire contents of which are hereby incorporated by reference herein.

[0004] FIELD

[0005] Embodiments relate to methods of and apparatuses for growing a low roughness nanocrystalline diamond film by low temperature chemical vapor deposition.

[0006] DESCRIPTION OF RELATED ART

[0007] Use of high-frequency radiation systems, including for use in plasma processing, are used extensively in the manufacture of many different technologies, such as those in the semiconductor industry, display technologies, microelectromechanical systems (MEMS), and the like. Currently, radio frequency (RF) radiation systems with a single antenna are most often used. However, in the case of plasmas generated with higher frequencies, including microwave frequencies, a plasma with higher plasma density and / or a plasma with a high concentration of excited neutral species are formed. Unfortunately, high-frequency radiation systems which are generated from a single antenna, for example those used to form plasmas, suffer their own drawbacks.

[0008] SUMMARY

[0009] Embodiments include a method of fabricating a nanocrystalline diamond (NCD) film including loading a substrate such as a nanodiamond-seeded silicon wafer into a microwave plasma- enhanced chemical vapor deposition (MWPECVD) chamber, and processing the nanodiamond- seeded silicon wafer with a plasma of CxHy(y > x), CO2 and H2, at a temperature less than 300 degrees Celsius, to form a layer of nanocrystalline diamond thereon. In other embodiments, a nanodiamond- seeded SiGe substrate or a nanodiamond-seeded GaAs substrate is used.

[0010] Embodiments include a method of fabricating a nanocrystalline diamond (NCD) film including loading a substrate such as a bare silicon wafer that has been surface-treated and incubated into a microwave plasma-enhanced chemical vapor deposition (MWPECVD) chamber, and processing the bare silicon wafer that has been surface-treated and incubated with a plasma of CxHy(y > x), CO2 and H2, at a temperature less than 300 degrees Celsius, to form a layer of nanocrystalline diamond thereon. In other embodiments, a SiGe substrate or a GaAs substrate is used. Embodiments include a processing tool that comprises a processing chamber and a modular high-frequency emission source. The processing chamber is configured to receive a substrate such as a nanodiamond-seeded silicon wafer or a bare silicon wafer that has been surface-treated and incubated. The modular high-frequency emission source is configured to provide a plasma of CxHy (y > x), CO2 and H2, at a temperature less than 300 degrees Celsius, to form a layer of nanocrystalline diamond on the nanodiamond-seeded silicon wafer or the bare silicon wafer that has been surface-treated and incubated. In an embodiment, each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module, In an embodiment, the applicator is positioned opposing a chuck in the processing chamber on which one or more substrates are processed. In other embodiments, a nanodiamond-seeded SiGe substrate or a nanodiamond-seeded GaAs substrate is used. In other embodiments, a SiGe substrate or a GaAs substrate is used.

[0011] The above summary does not include an exhaustive list of all embodiments. It is contemplated that all systems and methods are included that can be practiced from all suitable combinations of the various embodiments summarized above, as well as those disclosed in the Detailed Description below and particularly pointed out in the claims filed with the application. Such combinations have particular advantages not specifically recited in the above summary.

[0012] BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1A is a schematic diagram of a processing tool that includes a modular high-frequency emission source, in accordance with an embodiment.

[0014] Figure IB is a table of nanocrystalline diamond (NCD) films grown at a temperature of 200 degrees Celsius (low temperature) versus 450 degrees Celsius (high temperature), in accordance with an embodiment of the present disclosure.

[0015] Figure 1C is a table of nanocrystalline diamond (NCD) films grown at a temperature of 200 degrees Celsius (low temperature) versus 450 degrees Celsius (high temperature), in accordance with an embodiment of the present disclosure.

[0016] Figure ID illustrates a cross-sectional view of an exemplary structure including an NCD film formed using a method described herein, in accordance with an embodiment of the present disclosure.

[0017] Figure 2A is a schematic block diagram of a solid state high-frequency emission module for growth of a low roughness nanocrystalline diamond film, in accordance with an embodiment. Figure 2B is a schematic block diagram of a portion of the electronics of a processing tool with a modular high-frequency emission source that includes a plurality of oscillator modules and feedback control for growth of a low roughness nanocrystalline diamond Him, in accordance with an embodiment.

[0018] Figure 2C is a schematic block diagram of a portion of the electronics of a processing tool with a modular high-frequency emission source that includes a plurality of oscillators modules for growth of a low roughness nanocrystalline diamond film, in accordance with an embodiment. Figure 2D is a schematic block diagram of a portion of the electronics of a processing tool with a modular high-frequency emission source that includes high-frequency emission modules that share an oscillator module for growth of a low roughness nanocrystalline diamond film, in accordance with an embodiment.

[0019] Figure 3 is cross-sectional illustration of an applicator that may be used to couple microwave radiation to a processing chamber for growth of a low roughness nanocrystalline diamond film, in accordance with an embodiment.

[0020] Figure 4 is a cross-sectional illustration of an array of applicators positioned on a dielectric sheet that is part of the processing chamber for growth of a low roughness nanocrystalline diamond film, in accordance with an embodiment.

[0021] Figure 5A is a plan view of an array of applicators that may be used to couple high-frequency radiation to a processing chamber for growth of a low roughness nanocrystalline diamond film, in accordance with an embodiment.

[0022] Figure 5B is a plan view of an array of applicators that may be used to couple high-frequency radiation to a processing chamber for growth of a low roughness nanocrystalline diamond film, in accordance with an additional embodiment.

[0023] Figure 5C is a plan view of an array of applicators and a plurality of sensors for detecting conditions of a radiation field and / or a plasma for growth of a low roughness nanocrystalline diamond film, in accordance with an embodiment.

[0024] Figure 5D is a plan view of an array of applicators that are formed in two zones of a multi-zone processing tool for growth of a low roughness nanocrystalline diamond film, in accordance with an embodiment.

[0025] Figure 6 illustrates a block diagram of an exemplary computer system that may be used in conjunction with a modular microwave radiation source for growth of a low roughness nanocrystalline diamond film, in accordance with an embodiment.

[0026] DETAILED DESCRIPTION

[0027] Methods in accordance with embodiments described herein include approaches for growing low roughness nanocrystalline diamond films by low temperature chemical vapor deposition. In a particular embodiment, a microwave plasma source including an array of microwave dielectric resonance antennas (DRAs) is used as a plasma source for the growth of a low roughness nanocrystalline diamond film on a silicon substrate.

[0028] Devices in accordance with embodiments described herein include a modular high-frequency emission source that comprises an array of high-frequency emission modules, wherein each module comprises an oscillator module, an amplification module, and an applicator. In the following description, numerous specific details are set forth in order to provide a thorough understanding of embodiments. It will be apparent to one skilled in the art that embodiments may be practiced without these specific details. In other instances, well-known aspects are not described in detail in order to not unnecessarily obscure embodiments. Furthermore, it is to be understood that the various embodiments shown in the accompanying drawings are illustrative representations and are not necessarily drawn to scale.

[0029] Embodiments include a modular high-frequency emission source that comprises an array of high-frequency emission modules for growth of a low roughness nanocrystalline diamond film. As used herein, “high-frequency” electromagnetic radiation include radio frequency radiation, very-high-frequency radiation, ultra-high-frequency radiation, and microwave radiation. “High- frequency” may refer to frequencies between 0. 1 MHz and 300 GHz. According to an embodiment, each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment, the oscillator module and the amplification module comprise electrical components that are all solid state electronic components.

[0030] Embodiments include methods of low temperature nanocrystalline diamond growth. In particular, a method of low temperature (e.g., less than 300 degrees Celsius) deposition of fully coalesced nanocrystalline diamond film is described. In an embodiment, the properties of a film deposited at such a low temperature are comparable to that of state-of-the-art high (e.g., greater than or equal to 450 degrees Celsius) temperature processes.

[0031] To provide context, typical growth of nanocrystalline diamond (NCD) film is conducted at temperatures above 450 degrees Celsius. In many semiconductor back end of the line processes, such as films deposition or growth, the presence of metal films (such as aluminum or copper) restricts the deposition temperature of subsequent film growth temperature. In accordance with one or more embodiments described herein, good quality NCD can be deposited at less than 300 degrees Celsius, enabling many application of this film in BEOL semiconductor processes. In one embodiment, the temperature regime (less than 300 degrees Celsius) as described herein is differentiated from higher temperature state-of-the-art processes. To provide further context, nanocrystalline diamond (NCD) films grown at temperatures below 400 degrees Celsius can open new applications to temperature sensitive substrates and devices. However, to ensure the formation of fully coalesced films at a reasonably high growth rate, NCD is typically deposited at elevated temperatures between 550 to 1000 degrees Celsius.

[0032] In accordance with an embodiment of the present disclosure, approaches for the deposition of low temperatures NCD film with properties comparable to that deposited at high temperatures is described. Approaches as described herein can involve the use of a resonator-based MPCVD chamber and “simple” process gases. In a particular embodiment, a nanodiamond-seeded silicon wafer and / or bare silicon wafer that has been surface-treated and incubated is placed into a resonator-based MPCVD chamber, e.g., a chamber including 1-50 resonators. The sample is then processed with a plasma of CxHy(y > x), CO2 and H2, e.g., at power greater than 50 W. C-xHyherein, may refer to a hydrocarbon gas, liquid and / or solid carbon-containing precursor. In one embodiment, a gap between a stage and plasma source is greater than 10 mm. Process duration can be adjusted according to the required film thickness. Stage temperature can be maintained at a fixed temperature between 100 to 450 °C throughout the entire process (and in particular embodiments at a temperatures less than 300 degrees Celsius).

[0033] A comparison of the properties of NCD film deposited at low and high temperatures is summarized in Table 180 of Figure IB and in Table 185 of Figure 1C. The samples were characterized by scanning electron microscopy, nanoindentation, Raman measurements (325 nm laser) and atomic force microscopy. It can be observed that both films deposited at low (200 °C) and high (450 °C) temperatures exhibited similar morphologies and surface roughness, and had attained comparable deposition rates, ID / IG, hardness and modulus performances. Other film properties such as thermal conductivity, elemental composition, and density have also been validated to be comparable for both films. This reveals a method of depositing NCD films at low temperatures without compromising on its deposition rate and various film characteristics, a critical finding for the use of NCD materials in the back end of line applications.

[0034] Figure ID illustrates a cross-sectional view of an exemplary structure including an NCD film formed using a method described herein, in accordance with an embodiment of the present disclosure.

[0035] Referring to Figure ID, a back end of line structure 190 includes a low temperature NCD film 112, a transistor layer or layers 114, and a gate 118 between source or drain structures 116A and 116B. In one embodiment, the temperature NCD film 112 is includes for thermal reduction applications.

[0036] In an embodiment, a method of depositing NCD films at a low temperature includes using a stage temperature of less than 300 degrees Celsius. In an embodiment, a method of depositing NCD films at a low temperature includes using a stage temperature of about 200 degrees Celsius. In an embodiment, a method of depositing NCD films at a low temperature includes using a stage temperature in a range of 100 to 300 degrees Celsius. In an embodiment, a method of depositing NCD films at a low temperature includes using a stage temperature in a range of 150 to 250 degrees Celsius. In an embodiment, a method of depositing NCD films at a low temperature includes using a stage temperature in a range of 160 to 240 degrees Celsius. In an embodiment, a method of depositing NCD films at a low temperature includes using a stage temperature in a range of 170 to 230 degrees Celsius. In an embodiment, a method of depositing NCD films at a low temperature includes using a stage temperature in a range of 180 to 220 degrees Celsius. In an embodiment, a method of depositing NCD films at a low temperature includes using a stage temperature in a range of 190 to 210 degrees Celsius.

[0037] In another aspect, typical high-frequency radiation systems, for example those to form a microwave plasma, use a singular, large source of high-frequency or microwave radiation (e.g., a magnetron) and a transmission path for guiding the microwave radiation from the magnetron to the processing chamber. For example, in typical high power microwave applications in the semiconductor industry the transmission path is a microwave waveguide. Waveguides are used because outside of a waveguide designed to carry the specific frequency of the microwave source, the microwave power attenuates rapidly with distance. Additional components, such as tuners, couplers, mode transformers, and the like are also required to transmit the microwave radiation to the processing chamber. These components limit the construction to large systems (i.e., at least as large as the sum of the waveguide and associated components), and severely limit the design. As such, the geometry of the high-frequency radiation field, which may be used to form a plasma, is constrained since the geometry of the high-frequency radiation field resembles the shape of waveguides.

[0038] Accordingly, it is difficult to match the geometry of the high-frequency radiation field to the geometry of the substrate that is being processed. In particular, it is difficult to create a high- frequency radiation field at microwave frequencies, either to form a plasma or to expose a substrate to radiation, where the process is uniformly performed on the whole area of the substrate (e.g., 200 mm, 300 mm or larger diameter silicon wafers, glass substrates used in the display industry, or continuous substrates used in roll-to-roll manufacturing, or the like). Some microwave generated plasmas may use a slot line antenna to allow the microwave energy to be spread over an extended surface. However, such systems are complicated, require specific geometry, and are limited in the power density that can be coupled to the plasma.

[0039] Furthermore, high-frequency radiation systems typically generate radiation fields and / or plasmas that are not highly uniform and / or are not able to have a spatially tunable density. As the substrates that are being processed continue to increase in size, it becomes increasingly difficult to account for edge effects. Additionally, the inability to tune the radiation field and / or plasma limits the ability to modify processing recipes to account for incoming substrate nonuniformity and adjust the radiation field density and / or plasma density for processing systems in which a nonuniformity is required to compensate for the design of the processing system (e.g., to accommodate the nonuniform radial velocity of the rotating wafers in some processing chambers).

[0040] In another aspect, state of the art nanocrystalline diamond films have a surface roughness of 10- 60nm root mean square (rms) (by AFM) using microwave plasma with CH4, H2 and CO2 gas. Using DC-Biasing of the substrate as well adding Argon to the gas mixture can reduce the surface roughness to ~3.5nm. Pulsing the Plasmas has also been reported to reduce the surface roughness. However, the drawback of these methods is typically a resulting slower growth rate. In accordance with one or more embodiments of the present disclosure, an approach for generating a microwave plasma using dielectric resonance antennas is described, versus current state of the art microwave plasmas sources that use a resonance cavity method or slotted antenna method. In an embodiment, a surface roughness of less than 10 nanometers continuous wave (i.e., not pulsed) microwave source with CH4, H2 and CO2 gas. Advantages for implementing embodiments described herein can include the result that growth rate is not compromised with the use of the other techniques such as biasing, pulsing or the addition of Argon. In accordance with one or more embodiments of the present disclosure, arrays of individually controlled DRA allows for the creation of a large areal microwave plasma which results in uniform large areal film deposition. In other embodiments, however, a pulsed wave plasma is used to implement embodiments described herein. In particular embodiments, low roughness nanocrystalline diamond film growth is performed using resonator-based microwave plasma-enhanced chemical vapor deposition. In accordance with one or more embodiments of the present disclosure, a method for the deposition of low roughness NCD film is described. The method involves the use of a resonator-based MWPECVD chamber and simple process gases, without the involvement of bias, pulsing and / or inert gases.

[0041] In accordance with one or more embodiments of the present disclosure, first, a nanodiamond- seeded silicon wafer and / or a bare silicon wafer that has been surface-treated and incubated is placed into a resonator-based MWPECVD chamber. Depending on the process requirements, 1 - 50 resonators may be used, exemplary arrangements which are described below.

[0042] Next, the sample is then processed with a plasma of CxHy(y > x), CO2 and H2, at power greater than 50 W or at a temperature less than 300 degrees Celsius or both at power greater than 50 W or at a temperature less than 300 degrees Celsius. As used herein, CxHycan refer to a hydrocarbon gas, liquid and / or solid carbon-containing precursor. In an embodiment, no other process gas is required to help smoothen the surface of the NCD film. In one embodiment, the stage temperature is maintained less than 300 °C throughout the entire process and the gap between the stage and plasma source is greater than 10 mm. The process duration can be adjusted according to the required film thickness.

[0043] In an embodiment, in the case of a wafer that has been surface-treated and incubated, forming the treated substrate surface includes using more than one cycle of exposure to a mild first plasma. In one or more embodiments, the first plasma source is positioned at a first distance Di from the top surface of the substrate. In some embodiments, the first distance, Di, is greater than or equal to 10 mm, 15 mm, 20 mm, or 25 mm. The treated substrate is incubated with a carbon- rich gas stream and a second plasma to nucleate diamond particles forming a diamond nuclei layer on the top surface of the substrate. In one or more embodiments, the diamond nuclei layer is formed in a second plasma process chamber with a second mild plasma generated by a plasma source. In other embodiments, the diamond nuclei layer is formed in the first plasma process chamber with a second mild plasma generate by a plasma source. In some embodiments, the second mild plasma can be generate by the first plasma source but using different gases (compositions).

[0044] As used herein, a "substrate surface" can refer to any substrate surface upon which a layer may be formed. The substrate surface may have one or more features formed therein, one or more layers formed thereon, and combinations thereof. The substrate (or substrate surface) may be pretreated prior to the deposition of the molybdenum-containing layer, for example, by polishing, etching, reduction, oxidation, halogenation, hydroxylation, annealing, baking, or the like.

[0045] The substrate may be any substrate capable of having material deposited thereon, such as a silicon substrate, a III-V compound substrate, a silicon germanium (SiGe) substrate, an episubstrate, a silicon-on-insulator (SOI) substrate, a display substrate such as a liquid crystal display (LCD), a plasma display, an electro luminescence (EL) lamp display, a solar array, solar panel, a light emitting diode (LED) substrate, a semiconductor wafer, or the like. In some embodiments, one or more additional layers may be disposed on the substrate such that the polymerizable seed layer may be at least partially formed thereon. For example, in some embodiments, a layer comprising a metal, a nitride, an oxide, or the like, or combinations thereof may be disposed on the substrate and may have the polymerizable seed layer formed upon such layer or layers. In one or more embodiments, the substrate comprises silicon (Si) or poly-silicon (p-Si). In some embodiments, the substrate comprises a poly-Silicon substrate. In some embodiments, the substrate is chemically and / or physically unmodified. In another aspect, the use of solid state electronics, instead of for example a magnetron, allows for a significant reduction in the size and the complexity of a high-frequency radiation source. Particularly, the solid state components are much smaller than the magnetron hardware described above. Additionally, the use of solid state components allows for the elimination of bulky waveguides needed to transmit the high-frequency radiation to the processing chamber. Instead, the high-frequency radiation may be transmitted with coaxial cabling. The elimination of waveguides also allows for the construction of a large area modular high-frequency emission source where the size of the plasma formed is not limited by the size of waveguides. Instead, an array of high-frequency emission modules may be constructed in a given pattern that allows for the formation of a plasma that is arbitrarily large (and arbitrarily shaped) to match the shape of any substrate. Furthermore, the cross-sectional shape of the applicators may be chosen so that the array of applicators may be packed together as tightly as possible (i.e., a closed-packed array). The use of an array of high-frequency emission modules also provides greater flexibility in the ability to locally change the radiation field and / or the plasma density by independently changing the power settings of the amplification module for each high-frequency emission module. This allows for uniformity optimization during radiation field exposure and / or plasma processing, such as adjustments made for wafer edge effects, adjustments made for incoming wafer nonuniformity, and the ability to adjust the radiation field exposure and / or plasma density for processing systems in which a nonuniformity is needed to compensate for the design of the processing system (e.g., to accommodate the nonuniform radial velocity of the rotating wafers in some processing chambers).

[0046] Additional embodiments may also include one or more radiation field and / or plasma monitoring sensors. Such embodiments provide a way to measure the density of the plasma, or the electric field strength, or any other plasma property or radiation field property, locally by each applicator, and to use that measurement as part of a feedback loop to control the power applied to each high-frequency emission module. Accordingly, each high-frequency emission module may have independent feedback, or a subset of the high-frequency emission modules in the array may be grouped in zones of control where the feedback loop controls the subset of high- frequency emission modules in the zone.

[0047] In addition to the enhanced tuneability of the radiation field and / or the plasma, the use of individual high-frequency emission modules provides a greater power density than are currently available in existing radiation sources and / or plasma sources. For example, high-frequency emission modules may allow for a power density that is approximately five or more times greater than typical RF plasma processing systems. For example, typical power into a plasma enhanced chemical vapor deposition process is approximately 3,000 W, and provides a power density of approximately 4 W / cm2for a 300 mm diameter wafer. In contrast, high-frequency emission modules according to embodiments may use a 300 W power amplifier with a 4 cm diameter applicator, to provide a power density of approximately 24 W / cm2at an applicator packing density of approximately 1. At an applicator packing density of 1 / 3 and with use of a 1000 W power amplifier, a power density of 27 W / cm2is provided. At an applicator packing density of 1 and with use of a 1000 W power amplifier, a power density of 80 W / cm2is provided.

[0048] Usual approaches for making high-frequency radiation sources and / or plasmas (e.g., microwave plasmas) involve the use of a single oscillator module and a single electrode or applicator to couple the high-frequency energy to the substrate and / or, in the case of forming a plasma, to the process gas. However, using multiple electrode / applicator structures with a single oscillator module that is split to power each of the multiple electrodes / applicators has drawbacks. Particularly, an interference pattern will necessarily form because the electromagnetic radiation generated by single oscillator module results in electromagnetic radiation emitted by each applicator to be at the same frequency and at a fixed phase with each other. The interference pattern produces local maxima and minima that result in a non-uniform radiation field and / or plasma.

[0049] Accordingly, embodiments include an array of high-frequency emission modules with each high- frequency emission module having its own oscillator module. When a plurality of oscillator modules are used, the electromagnetic radiation generated by a first oscillator module may not interfere with the electromagnetic radiation generated by a second oscillator module because the first and second oscillator modules may not be at the same frequency nor have a controlled phase difference between the first and second oscillator modules. In embodiments where a plasma is formed, the plasma will have improved uniformity since there is no interference pattern. Similarly, when a plasma is not formed (e.g., microwave heating or microwave curing), interference patterns are avoided and, in an embodiment more uniform heating or curing of the substrate is obtained. In an additional embodiment, a single oscillator module may be shared between two or more (but not all) of the high-frequency emission modules. In such embodiments, the high-frequency emission modules that share the same oscillator module may be referred to as phase locked high-frequency emission modules.

[0050] Referring now to Figure 1A, a cross-sectional illustration of a processing tool 100 is shown, according to an embodiment. In some embodiments, the processing tool 100 may be a processing tool suitable for any type of processing operation that uses a radiation field and / or a plasma. For example, the processing tool 100 may be a processing tool used for plasma enhanced chemical vapor deposition (PECVD), plasma enhanced atomic layer deposition (PEALD), etch and selective removal processes, and plasma cleaning. While the embodiments described in detail herein are directed to plasma processing tools, it is to be appreciated that additional embodiments may include a processing tool 100 that includes any tool that utilizes high- frequency electromagnetic radiation. For example, a processing tool 100 that utilizes high- frequency electromagnetic radiation without forming a plasma may include industrial heating, degassing, surface activation, and / or curing processing tools 100.

[0051] Generally, embodiments include a processing tool 100 that includes a chamber 178. In processing tools 100, the chamber 178 may be a vacuum chamber. A vacuum chamber may include a pump (not shown) for removing gases from the chamber to provide the desired vacuum. Additional embodiments may include a chamber 178 that includes one or more gas lines 170 for providing processing gasses into the chamber 178 and exhaust lines 172 for removing byproducts from the chamber 178. In an additional embodiment, chamber 178 may be a pressure vessel, providing for maintaining a pressure equal to or greater than one atmosphere of pressure. While not shown, it is to be appreciated that the processing tool 100 may include a showerhead for evenly distributing the processing gases over a substrate 174. In some embodiments, the processing tool 100 may optionally not include a chamber, (i.e., the processing tool 100 may be a chamberless processing tool).

[0052] In an embodiment, the substrate 174 may be supported on a chuck 176. For example, the chuck 176 may be any suitable chuck, such as an electrostatic chuck. The chuck may also include cooling lines and / or a heater to provide temperature control to the substrate 174 during processing. Due to the modular configuration of the high-frequency emission modules described herein, embodiments allow for the processing tool 100 to accommodate any sized substrate 174. For example, the substrate 174 may be a semiconductor wafer (e.g., 200 mm, 300 mm, 450 mm, or larger). Alternative embodiments also include substrates 174 other than semiconductor wafers. For example, embodiments may include a processing tool 100 configured for processing glass substrates, (e.g., for display technologies).

[0053] According to an embodiment, the processing tool 100 includes a modular high-frequency emission source 104. The modular high-frequency emission source 104 may comprise an array of high-frequency emission modules 105. In an embodiment, each high-frequency emission module 105 may include an oscillator module 106, an amplification module 130, and an applicator 142. In an embodiment, the oscillator module 106 and the amplification module 130 may comprise electrical components that are solid state electrical components. In an embodiment, each of the plurality of oscillator modules 106 may be communicatively coupled to different amplification modules 130. In some embodiments, there may be a 1:1 ratio between oscillator modules 106 and amplification modules 130. For example, each oscillator module 106 may be electrically coupled to a single amplification module 130. In an embodiment, the plurality of oscillator modules 106 may generate electromagnetic radiation that is at more than one frequency, and that does not have a controlled phase relationship. Accordingly, the electromagnetic radiation induced in the chamber 178 will not interact in a manner that results in an undesirable interference pattern.

[0054] In an embodiment, each oscillator module 106 generates electromagnetic radiation that is transmitted to the amplification module 130. After processing by the amplification module 130, the electromagnetic radiation is transmitted to the applicator 142. According to an embodiment, an array 140 of applicators 142 are coupled to the chamber 178 and each emit electromagnetic radiation into the chamber 178. In some embodiments, the applicators 142 couple the electromagnetic radiation to the processing gasses in the chamber 178 to produce a plasma. Referring now to Figure 2A, a schematic block diagram of the electronics in a high-frequency emission module 105 in the modular high-frequency emission source 104 is shown, according to an embodiment. In an embodiment, each oscillator module 106 includes a voltage control circuit 210 for providing an input voltage to a voltage controlled oscillator 220 in order to produce high- frequency electromagnetic radiation at a desired frequency. Embodiments may include an input voltage between approximately IV and 10V DC. The voltage controlled oscillator 220 is an electronic oscillator whose oscillation frequency is controlled by the input voltage. According to an embodiment, the input voltage from the voltage control circuit 210 results in the voltage controlled oscillator 220 oscillating at a desired frequency. In an embodiment, the high- frequency electromagnetic radiation may have a frequency between approximately 0.1 MHz and 30 MHz. In an embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 30 MHz and 300MHz. In an embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 300 MHz and 1GHz. In an embodiment, the high-frequency electromagnetic radiation may have a frequency between approximately 1 GHz and 300 GHz. In an embodiment, one or more of the plurality of oscillator modules 106 may emit electromagnetic radiation at different frequencies.

[0055] According to an embodiment, the electromagnetic radiation is transmitted from the voltage controlled oscillator 120 to the amplification module 130. The amplification module 130 may include a driver / pre- amplifier 234, and a main power amplifier 236 that are each coupled to a power supply 239. According to an embodiment, the amplification module 130 may operate in a continuous wave mode for growth of a low roughness nanocrystalline diamond him.

[0056] In an embodiment, the electromagnetic radiation may be transmitted to the applicator 142 after being processed by the amplification module 130. However, part of the power transmitted to the applicator 142 may be reflected back due to the mismatch in the output impedance. Accordingly, some embodiments include a detector module 281 that allows for the level of forward power 283 and reflected power 282 to be sensed and fed back to the control circuit module 221. It is to be appreciated that the detector module 281 may be located at one or more different locations in the system. In an embodiment, the control circuit module 221 interprets the forward power 283 and the reflected power 292, and determines the level for the control signal 285 that is communicatively coupled to the oscillator module 106 and the level for the control signal 286 that is communicatively coupled to the amplifier module 130. In an embodiment, control signal 285 adjusts the oscillator module 106 to optimize the high-frequency radiation coupled to the amplification module 130. In an embodiment, control signal 286 adjusts the amplifier module 130 to optimize the output power coupled to the applicator 142. In an embodiment, the feedback control of the oscillator module 106 and the amplification module 130 may allow for the level of the reflected power to be less than approximately 5% of the forward power. In some embodiments, the feedback control of the oscillator module 106 and the amplification module 130 may allow for the level of the reflected power to be less than approximately 2% of the forward power.

[0057] Accordingly, embodiments allow for an increased percentage of the forward power to be coupled into the processing chamber 178, and increases the available power coupled to the plasma. Furthermore, impedance tuning using a feedback control is superior to impedance tuning in typical slot-plate antennas. In slot-plate antennas, the impedance tuning involves moving two dielectric slugs formed in the applicator. This involves mechanical motion of two separate components in the applicator, which increases the complexity of the applicator. Furthermore, the mechanical motion may not be as precise as the change in frequency that may be provided by a voltage controlled oscillator 220.

[0058] Referring now to Figure 2B, a schematic of a portion of the solid state electronics of a modular high-frequency emission source 104 with an array of high-frequency emission modules 105 is shown, in accordance with an embodiment. In the illustrated embodiment, each high-frequency emission module 105 includes an oscillator module 106 that is communicatively coupled to a different amplification module 130. Each of the amplification modules 130 may be coupled to different applicators 142. In an embodiment, a control circuit 221 may be communicatively coupled to the oscillator module 106 and the amplification module 130.

[0059] In the illustrated embodiment, each of the oscillator modules 106 and the amplification modules 130 are formed on a single board 290, such as a printed circuit board (PCB). However, it is to be appreciated that the oscillator modules 106 and the amplification module 130 may be formed on two or more different boards 290. In the illustrated embodiment four high-frequency emission modules 105 are shown. However, it is to be appreciated that the modular high-frequency emission source 104 may include two or more high-frequency emission modules 105. For example the modular high-frequency emission source 104 may include 2 or more high-frequency emission modules, 5 or more high-frequency emission modules, 10 or more high-frequency emission modules, or 25 or more high-frequency emission modules.

[0060] Referring now to Figure 2C, a schematic of a portion of the solid state electronics of a modular high-frequency emission source 104 with an array of high-frequency emission modules 105 is shown, in accordance with an embodiment. Figure 2C is substantially similar to the system illustrated in Figure 2B, with the exception that the control circuit is omitted. Particularly, in some embodiments the feedback control provided by a detector and the control circuit may not be needed.

[0061] Referring now to Figure 2D, a schematic of a portion of the solid state electronics of a modular high-frequency emission source 104 with an array of high-frequency emission modules 105 where some of the high-frequency emission modules 105 are phase locked is shown, in accordance with an embodiment. In Figure 2D, a plurality of oscillator modules 106 are shown, where each oscillator module 106i and IO62 is shared by more than one high-frequency emission module 105. For example, high-frequency emission modules 105A and 105B share oscillator module IO61, and high-frequency emission modules 105c and 105D share oscillator module IO62. Particularly, oscillator module IO61 is communicatively coupled to amplification modules 130A and 130B, and oscillator module IO62 is communicatively coupled to amplification modulesl30c and 130D- In such embodiments, the high-frequency emission modules 105 that share the same oscillator module 106 may be considered phase locked. For example, high-frequency emission modules 105A and 105B are phase locked with each other since they are both share oscillator module IO61, and high-frequency emission modules 105c and 105D are phase locked with each other since they both share oscillator module IO62. While high-frequency emission modules 105A and 105B are phase locked with each other, it is to be appreciated that high-frequency emission modules 105A and 105B may generate high-frequency radiation that is a different frequency than high-frequency radiation generated by high-frequency emission modules 105c and 105D coupled to oscillator module IO62. Additionally, the high-frequency radiation generated by high-frequency emission modules 105A and 105B may not have any coordinated phase relationship with high-frequency radiation generated by high-frequency emission modules 105c and 105D.

[0062] Furthermore, while Figure 2D illustrates two high-frequency emission modules 105 being phase locked, any number of high-frequency emission modules 105 may be phase locked by sharing the same oscillator module 106, so long as not all of the microwave amplification circuitry blocks 130 in the modular high-frequency emission source 104 are phase locked. For example, the ratio of oscillator modules 106 to high-frequency emission modules may be 1:2, 1:3, 1:4, 1:5, etc. Additionally, it is to be appreciated that the embodiments may include phase locked high- frequency emission modules 105 that include feedback control, such as the feedback control that includes a detector module and a control circuit, similar to what is described above with respect to Figure 2A.

[0063] Referring now to Figure 3, a cut-away illustration of an applicator 142 is shown, according to an embodiment. In an embodiment, the electromagnetic radiation is transmitted to an applicator 142 by a coaxial cable 351 that couples to a monopole 357 that extends axially through the applicator 142. In an embodiment where the electromagnetic radiation is microwave radiation, the monopole 357 may also extend into a channel 358 formed into a center of a dielectric resonant cavity 353. The dielectric resonant cavity 353 may be a dielectric material, such as quartz, aluminum oxide, titanium oxide, or the like. Additional embodiments may also include a resonant cavity 353 that does not include a material (i.e., the dielectric resonant cavity 353 may be air or a vacuum). According to an embodiment, the dielectric resonator is dimensioned so that the dielectric resonator supports resonance of the microwave radiation. Generally, the size of the dielectric resonant cavity 353 is dependent on the dielectric constant of the material used to form the dielectric resonant cavity 353 and the frequency of the microwave radiation. For example, materials with higher dielectric constants would allow for smaller resonant cavities 353 to be formed. In an embodiment where the dielectric resonant cavity 353 includes a circular crosssection, the diameter of the dielectric resonant cavity 353 may be between approximately 1 cm and 15 cm. In an embodiment, the cross-section of the dielectric resonant cavity 353 along a plane perpendicular to the monopole 357 may be any shape, so long as the dielectric resonant cavity 353 is dimensioned to support resonance. In the illustrated embodiment, the cross-section along a plane perpendicular to the monopole 357 is circular, though other shapes may also be used, such as polygons (e.g., triangles, rectangles, etc.), symmetrical polygons (e.g., squares, pentagons, hexagons, etc.), ellipses, or the like).

[0064] In an embodiment, the cross-section of the dielectric resonant cavity 353 may not be the same at all planes perpendicular to the monopole 357. For example, the cross-section of a bottom extension proximate to the open end of the applicator housing 355 is wider than the cross-section of the dielectric resonant cavity proximate to the channel 358. In addition to having crosssections of different dimensions, the dielectric resonant cavity 353 may have cross-sections with different shapes. For example, the portion of the dielectric resonant cavity 353 proximate to the channel 358 may have a circular shaped cross-section, whereas the portion of the dielectric resonant cavity 353 proximate to the open end of the applicator housing 355 may be a symmetrical polygon shape (e.g., pentagon, hexagon, etc.). However, it is to be appreciated that embodiments may also include a dielectric resonant cavity 353 that has a uniform cross-section at all planes perpendicular to the monopole 357.

[0065] According to an embodiment, the applicator 353 may also include an impedance tuning backshort 356. The backshort 356 may be a displaceable enclosure that slides over an outer surface of the applicator housing 355. When adjustments to the impedance need to be made, an actuator (not shown) may slide the backshort 356 along the outer surface of the applicator housing 355 to change a distance D between a surface of the backshort 356 and a top surface of the dielectric resonant cavity 353. As such, embodiments provide more than one way to adjust the impedance in the system. According to an embodiment, an impedance tuning backshort 356 may be used in conjunction with the feedback process described above to account for impedance mismatches. Alternatively, the feedback process or an impedance tuning backshort 356 may be used by themselves to adjust for impedance mismatches.

[0066] According to an embodiment, the applicator 142 functions as a dielectric antenna that directly couples the microwave electromagnetic field into the processing chamber 178. The particular axial arrangement of the monopole 357 entering the dielectric resonant cavity 353 may produce an TM015 mode excitation. However different modes of excitation may be possible with different applicator arrangements. For example, while an axial arrangement is illustrated in Figure 3, it is to be appreciated that the monopole 357 may enter the dielectric resonant cavity 353 from other orientations. In one such embodiment, the monopole 357 may enter the dielectric resonant cavity 353 laterally, (i.e., through a sidewall of the dielectric resonant cavity 353). It is to be appreciated that the applicator 142 illustrated in Figure 3 is exemplary in nature, and embodiments are not limited to the design described. For example, the applicator 142 in Figure 3 is particularly suitable for emitting microwave radiation. However, embodiments may include any applicator design that is configured to emit any high-frequency electromagnetic radiation for growth of a low roughness nanocrystalline diamond film.

[0067] Referring now to Figure 4, an illustration of a portion of a processing tool 100 with an array 140 of applicators 142 coupled to the chamber 178 is shown, according to an embodiment. In the illustrated embodiment, the high-frequency electromagnetic radiation from the applicators 142 is coupled into the chamber 178 by being positioned proximate to a dielectric plate 450. The proximity of the applicators 142 to the dielectric plate 450 allows for the high-frequency radiation resonating in the dielectric resonant cavity 353 (not shown in Figure 4) to couple with the dielectric plate 450, which may then couple with processing gasses in the chamber to generate a plasma. In some embodiments where a plasma is not induced, the high-frequency radiation is coupled into the chamber volume to generate a radiation field. In one embodiment, the dielectric resonant cavity 353 may be in direct contact with the dielectric plate 350. In an additional embodiment, the dielectric resonant cavity 353 may be spaced away from a surface of the dielectric plate 450, so long as the microwave radiation can still be transferred to the dielectric plate 450. In additional embodiments, the applicators 142 may be set into cavities in the dielectric plate 450. In yet another embodiment, the applicators 142 may pass through the dielectric plate 450, so that the dielectric resonant cavities 353 are exposed to the interior of the chamber 178.

[0068] In an embodiment, the applicators 142 may include any antenna design that is configured to emit any frequency of the high-frequency electromagnetic radiation for growth of a low roughness nanocrystalline diamond film. In an embodiment, the array 140 of applicators may include more than one applicator 142 design. For example, the array 140 of applicators 142 may include a first applicator for emitting a first high-frequency radiation and a second applicator for emitting a second high-frequency radiation that is different than the first high-frequency radiation. According to an embodiment, the array 140 of applicators 142 may be removable from the dielectric plate 450 (e.g., for maintenance, to rearrange the array of applicators to accommodate a substrate with different dimensions, or for any other reason) without needing to remove the dielectric plate 350 from the chamber 178. Accordingly, the applicators 142 may be removed from the processing tool 100 without needing to release a vacuum in the chamber 178. According to an additional embodiment , the dielectric plate 450 may also function as a gas injection plate or a showerhead.

[0069] As noted above, an array of applicators 140 may be arranged so that they provide coverage of an arbitrarily shaped substrate 174. Figure 5A is a plan view illustration of an array 140 of applicators 142 that are arranged in a pattern that matches a circular substrate 174. By forming a plurality of applicators 142 in a pattern that roughly matches the shape of the substrate 174, the radiation field and / or plasma becomes tunable over the entire surface of the substrate 174. For example, each of the applicators 142 may be controlled so that a plasma with a uniform plasma density across the entire surface of the substrate 174 is formed and / or a uniform radiation field across the entire surface of the substrate 174 is formed. Alternatively, one or more of the applicators 142 may be independently controlled to provide plasma densities that are variable across the surface of the substrate 174. As such, incoming nonuniformity present on the substrate may be corrected. For example, the applicators 142 proximate to an outer perimeter of the substrate 174 may be controlled to have a different power density than applicators proximate to the center of the substrate 174. Furthermore, it is to be appreciated that the use of high-frequency emission modules 105 that emit electromagnetic radiation that is at different frequencies and does not have a controlled phase relationship in order eliminate the existence of standing waves and / or unwanted interference patterns. In Figure 5A, the applicators 142 in the array 140 are packed together in a series of concentric rings that extend out from the center of the substrate 174. However, embodiments are not limited to such configurations, and any suitable spacing and / or pattern may be used depending on the needs of the processing tool 100. Furthermore, embodiments allow for applicators 142 with any symmetrical cross-section, as described above. Accordingly, the cross-sectional shape chosen for the applicator may be chosen to provide enhanced packing efficiency.

[0070] Referring now to Figure 5B, a plan view of an array 140 of applicators 142 with a non-circular cross-section is shown, according to an embodiment. The illustrated embodiment includes applicators 142 that have hexagonal cross-sections. The use of such an applicator may allow for improved packing efficiency because the perimeter of each applicator 142 may mate nearly perfectly with neighboring applicators 142. Accordingly, the uniformity of the plasma may be enhanced even further since the spacing between each of the applicators 142 may be minimized. While Figure 5B illustrates neighboring applicators 142 sharing sidewall surfaces, it is to be appreciated that embodiments may also include non-circular symmetrically shaped applicators that include spacing between neighboring applicators 142.

[0071] Referring now to Figure 5C, an additional plan-view illustration of an array 140 of applicators 142 is shown according to an embodiment. The array 140 in Figure 5C is substantially similar to the array 140 described above with respect to Figure 5A, except that a plurality of sensors 590 are also included. The plurality of sensors provides improved process monitoring capabilities that may be used to provide additional feedback control of each of the modular microwave sources 105. In an embodiment, the sensors 590 may include one or more different sensor types 590, such as plasma density sensors, plasma emission sensors, radiation field density sensors, radiation emission sensors, or the like. Positioning the sensors across the surface of the substrate 174 allows for the radiation field and / or plasma properties at given locations of the processing chamber 100 to be monitored.

[0072] According to an embodiment, every applicator 142 may be paired with a different sensor 590. In such embodiments, the output from each sensor 490 may be used to provide feedback control for the respective applicator 142 to which the sensor 590 has been paired. Additional embodiments may include pairing each sensor 590 with a plurality of applicators 142. For example, each sensor 490 may provide feedback control for multiple applicators 142 to which the sensor 590 is proximately located. In yet another embodiment, feedback from the plurality of sensors 590 may be used as a part of a multi-input multi-output (MIMO) control system. In such an embodiment, each applicator 142 may be adjusted based on feedback from multiple sensors 590. For example, a first sensor 490 that is a direct neighbor to a first applicator 142 may be weighted to provide a control effort to the first applicator 142 that is greater than the control effort exerted on the first applicator 142 by a second sensor 490 that is located further from the first applicator 142 than the first sensor 490.

[0073] Referring now to Figure 5D, an additional plan- view illustration of an array 140 of applicators 142 positioned in a multi-zone processing tool 100 is shown, according to an embodiment. In an embodiment, the multi-zone processing tool 100 may include any number of zones. For example, the illustrated embodiment includes zones 5751 - 575n. Each zone 575 may be configured to perform different processing operations on substrates 174 that are rotated through the different zones 575. As illustrated, a first array 1402 is positioned in zone 5752 and a second array 140nis positioned in zone 575n. However, embodiments may include multi-zone processing tools 100 with an array 140 of applicators 142 in one or more of the different zones 575, depending on the needs of the device. The spatially tunable density of the plasma and / or radiation field provided by embodiments allows for the accommodation of nonuniform radial velocity of the rotating substrates 174 as they pass through the different zones 575.

[0074] In an embodiment, the ratio of oscillator modules 106 to applicators 142 may be 1: 1 (i.e., every applicator 142 is coupled to a different oscillator module 106). In additional embodiments, the ratio of oscillator modules 106 to applicators 142 may be 1:2, 1:3, 1:4, etc. For example, in embodiments that include two arrays of applicators 1402 and 140n, each oscillator module 106 may be coupled to a first applicator 142 in the first array 1402 and to a second applicator 142 in the second array 140n.

[0075] Referring now to Figure 6, a block diagram of an exemplary computer system 660 of a processing tool 100 for growth of a low roughness nanocrystalline diamond film is illustrated in accordance with an embodiment. In an embodiment, computer system 660 is coupled to and controls processing in the processing tool 100. Computer system 660 may be connected (e.g., networked) to other machines in a Local Area Network (LAN), an intranet, an extranet, or the Internet. Computer system 660 may operate in the capacity of a server or a client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. Computer system 660 may be a personal computer (PC), a tablet PC, a set-top box (STB), a Personal Digital Assistant (PDA), a cellular telephone, a web appliance, a server, a network router, switch or bridge, or any machine capable of executing a set of instructions (sequential or otherwise) that specify actions to be taken by that machine. Further, while only a single machine is illustrated for computer system 660, the term “machine” shall also be taken to include any collection of machines (e.g., computers) that individually or jointly execute a set (or multiple sets) of instructions to perform any one or more of the methodologies described herein.

[0076] Computer system 660 may include a computer program product, or software 622, having a non- transitory machine-readable medium having stored thereon instructions, which may be used to program computer system 660 (or other electronic devices) to perform a process according to embodiments. A machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, a machine- readable (e.g., computer-readable) medium includes a machine (e.g., a computer) readable storage medium (e.g., read only memory (“ROM”), random access memory (“RAM”), magnetic disk storage media, optical storage media, flash memory devices, etc.), a machine (e.g., computer) readable transmission medium (electrical, optical, acoustical or other form of propagated signals (e.g., infrared signals, digital signals, etc.)), etc.

[0077] In an embodiment, computer system 660 includes a system processor 602, a main memory 604 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM), etc.), a static memory 606 (e.g., flash memory, static random access memory (SRAM), etc.), and a secondary memory 618 (e.g., a data storage device), which communicate with each other via a bus 630.

[0078] System processor 602 represents one or more general-purpose processing devices such as a microsystem processor, central processing unit, or the like. More particularly, the system processor may be a complex instruction set computing (CISC) microsystem processor, reduced instruction set computing (RISC) microsystem processor, very long instruction word (VLIW) microsystem processor, a system processor implementing other instruction sets, or system processors implementing a combination of instruction sets. System processor 602 may also be one or more special-purpose processing devices such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal system processor (DSP), network system processor, or the like. System processor 602 is configured to execute the processing logic 626 for performing the operations described herein.

[0079] The computer system 660 may further include a system network interface device 608 for communicating with other devices or machines. The computer system 660 may also include a video display unit 610 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 612 (e.g., a keyboard), a cursor control device 614 (e.g., a mouse), and a signal generation device 616 (e.g., a speaker).

[0080] The secondary memory 618 may include a machine-accessible storage medium 631 (or more specifically a computer-readable storage medium) on which is stored one or more sets of instructions (e.g., software 622) embodying any one or more of the methodologies or functions described herein. The software 622 may also reside, completely or at least partially, within the main memory 604 and / or within the system processor 602 during execution thereof by the computer system 660, the main memory 604 and the system processor 602 also constituting machine-readable storage media. The software 622 may further be transmitted or received over a network 620 via the system network interface device 608.

[0081] While the machine- accessible storage medium 631 is shown in an exemplary embodiment to be a single medium, the term “machine-readable storage medium” should be taken to include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) that store the one or more sets of instructions. The term “machine-readable storage medium” shall also be taken to include any medium that is capable of storing or encoding a set of instructions for execution by the machine and that cause the machine to perform any one or more of the methodologies. The term “machine-readable storage medium” shall accordingly be taken to include, but not be limited to, solid-state memories, and optical and magnetic media.

[0082] In the foregoing specification, specific exemplary embodiments have been described. It will be evident that various modifications may be made thereto without departing from the scope of the following claims. The specification and drawings are, accordingly, to be regarded in an illustrative sense rather than a restrictive sense.

Claims

CLAIMSWhat is claimed is:

1. A method of fabricating a nanocrystalline diamond (NCD) film, the method comprising: loading a nanodiamond- seeded substrate into a microwave plasma-enhanced chemical vapor deposition (MWPECVD) chamber; and processing the nanodiamond-seeded substrate with a plasma of CxHy(y > x), CO2 and H2, at a temperature less than 300 degrees Celsius, to form a layer of nanocrystalline diamond thereon.

2. The method of claim 1, wherein no other process gas are used to form the layer of nanocrystalline diamond.

3. The method of claim 1, wherein a stage temperature of a stage in the MWPECVD chamber is maintained between 150 - 250 °C throughout the processing of the nanodiamond-seeded substrate.

4. The method of claim 1 , wherein a gap between the stage and a plasma source of the MWPECVD chamber is greater than 10 mm.

5. The method of claim 1, wherein the layer of nanocrystalline diamond has a surface roughness of less than lOnm rms.

6. The method of claim 1 , wherein processing the nanodiamond-seeded substrate is performed at a power greater than 50 W.

7. The method of claim 1, wherein the plasma is a continuous wave plasma.

8. A method of fabricating a nanocrystalline diamond (NCD) film, the method comprising: loading a bare substrate that has been surface-treated and incubated into a microwave plasma-enhanced chemical vapor deposition (CVD) chamber; and processing the bare substrate that has been surface-treated and incubated with a plasma of CxHy(y > x), CO2 and H2, at a temperature less than 300 degrees Celsius, to form a layer of nanocrystalline diamond thereon.

9. The method of claim 8, wherein no other process gas are used to form the layer of nanocrystalline diamond.

10. The method of claim 8, wherein a stage temperature of a stage in the MWPECVD chamber is maintained between 150 -250 °C throughout the processing of the bare substrate.

11. The method of claim 8, wherein a gap between the stage and a plasma source of the MWPECVD chamber is greater than 10 mm.

12. The method of claim 8, wherein the layer of nanocrystalline diamond has a surfaceroughness of less than lOnm rms.

13. The method of claim 8, wherein processing the bare substrate is performed at a power greater than 50 W.

14. The method of claim 8, wherein the plasma is a continuous wave plasma.

15. A processing tool, comprising: a processing chamber configured to receive a substrate ; and a modular high-frequency emission source configured to provide a plasma of CxHy (y > x), CO2 and H2, at a temperature less than 300 degrees Celsius, , the modular high-frequency emission source comprising: a plurality of high-frequency emission modules, wherein each high- frequency emission module comprises: an oscillator module, wherein each oscillator module comprises: a voltage control circuit; and a voltage controlled oscillator; an amplification module, wherein the amplification module is coupled to the oscillator module; and an applicator, wherein the applicator is coupled to the amplification module, and wherein the applicator is positioned opposing a chuck in the processing chamber on which one or more substrates are processed.

16. The processing tool of claim 15, wherein each high-frequency emission module includes a different oscillator module.

17. The processing tool of claim 15, wherein two or more of the high-frequency emission modules share an oscillator module.

18. The processing tool of claim 15, wherein the high-frequency is a microwave frequency.

19. The processing tool of claim 15, wherein high-frequency electromagnetic radiation emitted from the applicators excites a plasma.

20. The processing tool of claim 15, wherein the high-frequency is 0.1 MHz to 300 GHz.

Images