Bonding device and bonding method

Abstract

This bonding device individually separates a plurality of dies from a carrier and joins the plurality of dies to a target substrate. The carrier includes a carrier substrate, a plurality of through holes penetrating the carrier substrate in the thickness direction, and a resin film provided on a surface of the carrier substrate facing the dies. The bonding device comprises: a carrier holding unit that holds the carrier; a substrate holding unit that holds the target substrate; and a conveyance unit that conveys the dies from the carrier to the target substrate. The bonding device comprises: a pressing unit that presses the resin film by supplying gas to the through-holes or inserting pins into the through-holes; and a suction unit that holds the carrier substrate by suction around the pressing unit.

Description

Joining device and joining method

[0001] The present disclosure relates to a joining device and a joining method.

[0002] The chip mounting system described in Patent Document 1 includes a chip supply device, a bonding device, a surface treatment device, a carry-in / out unit, and a transport unit (paragraph

[0225] of Patent Document 1). The chip supply device supplies multiple chips individually. The chips are attached to tape covering an opening of a frame, and are pushed up one by one and turned upside down (paragraph

[0251] of Patent Document 1). The bonding device attaches the chips supplied from the chip supply device to a substrate.

[0003] Japanese Patent No. 6337400

[0004] One aspect of the present disclosure provides a technique for smoothly separating multiple dies individually from a carrier.

[0005] A bonding apparatus according to one aspect of the present disclosure separates multiple dies from a carrier and bonds them to a target substrate. The carrier includes a carrier substrate, multiple through holes penetrating the carrier substrate in a thickness direction, and a resin film provided on a surface of the carrier substrate facing the dies. The bonding apparatus includes a carrier holding unit that holds the carrier, a substrate holding unit that holds the target substrate, and a transport unit that transports the dies from the carrier to the target substrate. The bonding apparatus also includes a pressing unit that presses the resin film by supplying gas to the through holes or by inserting pins into the through holes, and a suction unit that suction-holds the carrier substrate around the pressing unit.

[0006] According to one aspect of the present disclosure, multiple dies can be smoothly separated individually from the carrier.

[0007] FIG. 1 is a plan view showing a bonding system according to an embodiment. FIG. 2(A) is a cross-sectional view showing an example of a target substrate, and FIG. 2(B) is a cross-sectional view showing an example of a die bonded to the target substrate. FIG. 3 is a cross-sectional view showing an example of a plurality of dies mounted on a carrier. FIG. 4 is a flowchart showing a bonding method according to an embodiment. FIG. 5 is a plan view showing a bonding apparatus according to an embodiment. FIG. 6 is a cross-sectional view showing an example of the operation of the bonding apparatus. FIG. 7 is a cross-sectional view showing an example of the operation of the bonding apparatus subsequent to FIG. 6. FIG. 8(A) is a cross-sectional view showing an example of a pressing unit and an adsorption unit, taken along line A-A in FIG. 8(B), and FIG. 8(B) is a cross-sectional view taken along line B-B in FIG. 8(A). FIG. 9(A) is a cross-sectional view showing a first example of division of a gas chamber, taken along line A-A in FIG. 9(B), and FIG. 9(B) is a cross-sectional view taken along line B-B in FIG. 9(A). FIG. 10 is a cross-sectional view showing an example of control for sequentially pushing a thin die from the periphery toward the center of the die. FIG. 11 is a cross-sectional view showing an example of control for sequentially pushing a thin die in a direction from the center of the die toward its periphery. FIG. 12 is a cross-sectional view showing an example of control for sequentially pushing a thick die in a direction from the center of the die toward its periphery. FIG. 13(A) is a cross-sectional view showing a second example of division of the gas chamber, taken along line A-A in FIG. 13(B), and FIG. 13(B) is a cross-sectional view taken along line B-B in FIG. 13(A). FIG. 14(A) is a cross-sectional view showing a third example of division of the gas chamber, taken along line A-A in FIG. 14(B), and FIG. 14(B) is a cross-sectional view taken along line B-B in FIG. 14(A). FIG. 15(A) is a cross-sectional view showing a fourth example of division of the gas chamber, taken along line A-A in FIG. 15(B), and FIG. 15(B) is a cross-sectional view taken along line B-B in FIG. 15(A). FIG. 16 is a cross-sectional view showing an example of a pin constituting a pressing portion.

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that the same or corresponding components in each drawing are denoted by the same reference numerals, and descriptions thereof may be omitted. In this specification, the X-axis direction, Y-axis direction, and Z-axis direction are perpendicular to each other. The X-axis direction and Y-axis direction are horizontal directions, and the Z-axis direction is vertical. The X-axis direction includes the positive X-axis direction and the negative X-axis direction that is opposite to the positive X-axis direction. The Y-axis direction includes the positive Y-axis direction and the negative Y-axis direction that is opposite to the positive Y-axis direction. The Z-axis direction includes the positive Z-axis direction and the negative Z-axis direction that is opposite to the positive Z-axis direction.

[0009] Referring to FIG. 1, a bonding system 1 according to one embodiment will be described. The bonding system 1 individually separates a plurality of dies D from a carrier E and bonds them to a target substrate W. As shown in FIG. 2A, the target substrate W includes a semiconductor substrate W1 such as a silicon wafer and a plurality of devices W2 formed on the semiconductor substrate W1. The devices W2 are partitioned by a plurality of streets that intersect with each other at right angles. Each device W2 includes an electronic circuit. As shown in FIG. 2B, a die D is electrically connected to each device W2. The target substrate W is then cut along the streets to separate the devices W2 into individual devices, thereby obtaining semiconductor devices. Each semiconductor device includes the devices W2 and the die D.

[0010] The die D is formed by dividing a semiconductor substrate on which a plurality of devices other than the device W2 are formed into individual devices. The electronic circuit of the die D is electrically connected to the electronic circuit of the device W2 on the target substrate W. Note that the type and number of die D electrically connected to one device W2 are not particularly limited. Although not shown, multiple die D may be electrically connected to one device W2.

[0011] 3, the carrier E holds a plurality of dies D. The carrier E holds each die D with its bonding surface Da facing upward. This allows activation and hydrophilization of the bonding surface Da of each die D. The carrier E has a carrier substrate E1 and a resin film E2 provided on the surface of the carrier substrate E1 facing the die D.

[0012] The carrier E holds a plurality of dies D on the resin film E2. The carrier E electrostatically attracts the dies D. By pressing the dies D against the resin film E2, the resin film E2 can be deformed so as to remove gas from between the dies D and the resin film E2, and the dies D can also be vacuum-attached to the resin film E2.

[0013] The carrier substrate E1 may be conductive or insulating. Through holes E3 are formed in the carrier substrate E1, penetrating the carrier substrate E1 in the thickness direction. The die D can be peeled off from the carrier E by supplying gas to the through holes E3 or inserting pins (not shown) into the through holes E3. The number and arrangement of the through holes E3 are not particularly limited. One or more through holes E3 may be formed for each die D.

[0014] The resin film E2 is preferably made of a flexible material, specifically a material with an elastic modulus of 2 GPa or less, more preferably 0.5 GPa or less. From the viewpoint of durability during modification of the bonding surface Da of the die D, the resin film E2 is preferably made of, for example, polyimide or EVA (ethylene-vinyl acetate copolymer). The thickness of the resin film E2 is, for example, 10 μm. While the resin film E2 is a single layer in this embodiment, it may be made of multiple layers. For example, the resin film E2 may have a polyolefin layer and an acrylic adhesive layer.

[0015] 1 , the bonding system 1 includes a loading / unloading station 2, a first processing station 3, a second processing station 5, and a control circuit 9. The loading / unloading station 2, the first processing station 3, and the second processing station 5 are arranged in a line from the negative side of the X-axis to the positive side of the X-axis, in that order. Although not shown, a plurality of second processing stations 5 may be provided, and a plurality of second processing stations 5 may be arranged in a line from the negative side of the X-axis to the positive side of the X-axis.

[0016] The carry-in / out station 2 includes a mounting table 20. Cassettes C1 to C4 are mounted on the mounting table 20. Cassette C1 accommodates a target substrate W before a die D is bonded thereto. Cassette C2 accommodates a target substrate W after a die D has been bonded thereto. Cassette C3 accommodates a carrier E before the die D is separated therefrom. Cassette C4 accommodates a carrier E after the die D has been separated therefrom.

[0017] The loading / unloading station 2 includes a first transfer region 21 and a first transfer device 22. The first transfer region 21 is adjacent to the mounting table 20. The first transfer region 21 extends in the Y-axis direction. The first transfer device 22 has a transfer arm. The transfer arm holds and transfers the target substrate W and the carrier E in the first transfer region 21. The number of transfer arms may be one or more. The transfer arm for the target substrate W and the transfer arm for the carrier E may be provided separately. The first transfer device 22 has a drive unit (not shown) that moves or rotates the transfer arm. The transfer arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction) and rotating about the vertical axis.

[0018] The first processing station 3 includes a first storage device 30. The first storage device 30 is adjacent to the first transfer region 21. The first storage device 30 is disposed on the opposite side of the first transfer region 21 from the mounting table 20. The first storage device 30 temporarily stores target substrates W and carriers E. The first storage device 30 has multiple stages arranged in the vertical direction. Each stage holds a target substrate W and a carrier E. The stage for the target substrates W and the stage for the carriers E may be provided separately.

[0019] The first processing station 3 includes a second transfer region 31 and a second transfer device 32. The second transfer region 31 is adjacent to the first storage device 30 and extends from the first storage device 30 in the positive direction of the X-axis. The second transfer device 32 has a transfer arm. The transfer arm holds and transfers the target substrate W and the carrier E in the second transfer region 31. The number of transfer arms may be one or more. The transfer arm for the target substrate W and the transfer arm for the carrier E may be provided separately. The second transfer device 32 has a drive unit (not shown) that moves or rotates the transfer arm. The transfer arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction) and rotating about the vertical axis.

[0020] The first processing station 3 includes a first activation device 33, a first hydrophilization device 34, a second activation device 35, and a second hydrophilization device 36. The first activation device 33, the first hydrophilization device 34, the second activation device 35, and the second hydrophilization device 36 are adjacent to the second transport region 31 and are provided on the positive Y-axis side or the negative Y-axis side of the second transport region 31.

[0021] The first activation device 33 activates the bonding surface Da of the die D while the die D is held by the carrier E. The first activation device 33 is, for example, a plasma processing device. In the first activation device 33, oxygen gas, which is a processing gas, is excited under reduced pressure, for example, to form plasma and is ionized. The bonding surface Da of the die D is activated by irradiating the oxygen ions onto the bonding surface Da of the die D. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas.

[0022] The first hydrophilization device 34 hydrophilizes the bonding surface Da of the die D while the die D is held by the carrier E. For example, the first hydrophilization device 34 supplies pure water (e.g., deionized water) onto the die D while rotating the carrier E held by the spin chuck. The pure water imparts OH groups to the bonding surface Da of the die D, which has been activated in advance. The die D and the target substrate W can be bonded together by utilizing hydrogen bonding between the OH groups.

[0023] The second activation device 35 activates the bonding surface Wa of the target substrate W. The second activation device 35 is, for example, a plasma processing device. In the second activation device 35, oxygen gas, which is a processing gas, is excited under reduced pressure, for example, to form plasma and is ionized. The bonding surface Wa of the target substrate W is activated by irradiating the oxygen ions onto the bonding surface Wa of the target substrate W. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas.

[0024] The second hydrophilizing device 36 hydrophilizes the bonding surface Wa of the target substrate W. For example, the second hydrophilizing device 36 supplies pure water (e.g., deionized water) onto the target substrate W while rotating the target substrate W held by the spin chuck. The pure water provides OH groups to the bonding surface Wa of the target substrate W, which has been activated in advance. The die D and the target substrate W can be bonded using hydrogen bonding between the OH groups.

[0025] The second processing station 5 includes a second storage device 50. The second storage device 50 is adjacent to the second transport region 31. The second storage device 50 is disposed on the opposite side of the second transport region 31 from the first storage device 30. The second storage device 50 temporarily stores target substrates W and carriers E. The second storage device 50 has multiple stages arranged vertically. Each stage holds at least one of the target substrates W and the carriers E. The stage for the target substrates W and the stage for the carriers E may be provided separately.

[0026] The second processing station 5 includes a third transfer region 51 and a third transfer device 52. The third transfer region 51 is adjacent to the second storage device 50 and extends from the second storage device 50 in the positive direction of the X-axis. The third transfer device 52 has a transfer arm. The transfer arm holds and transfers the target substrate W and the carrier E in the third transfer region 51. The number of transfer arms may be one or more. The transfer arm for the target substrate W and the transfer arm for the carrier E may be provided separately. The third transfer device 52 has a drive unit (not shown) that moves or rotates the transfer arm. The transfer arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically (in the Z-axis direction) and rotating about the vertical axis.

[0027] The second processing station 5 includes a bonding device 60. The bonding device 60 is adjacent to the third transfer region 51 and is provided on the positive Y-axis side or the negative Y-axis side of the third transfer region 51. The bonding device 60 separates the die D from the carrier E and bonds the die D to the target substrate W with the bonding surface Da of the separated die D facing the bonding surface Wa of the target substrate W. Details of the bonding device 60 will be described later.

[0028] The control circuit 9 includes, for example, a calculation unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as a memory. The storage unit 92 stores programs that control various processes executed in the bonding system 1. The control circuit 9 controls the operation of the bonding system 1 by causing the calculation unit 91 to execute the programs stored in the storage unit 92. A lower-level control circuit that controls the operation of each device that constitutes the bonding system 1 may be provided, and a higher-level control circuit that controls the overall operation of multiple lower-level control circuits may be provided. The control circuit 9 may be configured with multiple lower-level control circuits and the higher-level control circuit.

[0029] The control circuit 9 includes electronic circuits such as a CPU, a GPU (Graphics Processing Unit), an FPGA (Field Programmable Gate Array), or an ASIC (Application Specific Integrated Circuit), and performs the various control operations described in this specification by executing instruction codes stored in a memory or by being a circuit designed for a specific application.

[0030] Next, a bonding method according to one embodiment will be described with reference to Fig. 4. The process of Fig. 4 is performed under the control of the control circuit 9. First, the first transport device 22 removes the carrier E from the cassette C3 and transports it to the first storage device 30. Next, the second transport device 32 removes the carrier E from the first storage device 30 and transports it to the first activation device 33.

[0031] Next, the first activation device 33 activates the bonding surface Da of the die D while the die D is held by the carrier E (step S101). Thereafter, the second transport device 32 removes the carrier E from the first activation device 33 and transports it to the first hydrophilization device 34.

[0032] Next, the first hydrophilization device 34 hydrophilizes the bonding surface Da of the die D while the die D is held by the carrier E (step S102). Thereafter, the second transport device 32 removes the carrier E from the first hydrophilization device 34 and transports it to the second storage device 50. Subsequently, the third transport device 52 removes the carrier E from the second storage device 50 and transports it to the bonding device 60.

[0033] In parallel with the above steps S101 and S102, the following steps S103 and S104 are performed. First, the first transfer device 22 removes the target substrate W from the cassette C1 and transfers it to the first storage device 30. Next, the second transfer device 32 removes the target substrate W from the first storage device 30 and transfers it to the second activation device 35.

[0034] Next, the second activation device 35 activates the bonding surface Wa of the target substrate W (step S103), after which the second transport device 32 removes the target substrate W from the second activation device 35 and transports it to the second hydrophilization device 36.

[0035] Next, the second hydrophilizing device 36 hydrophilizes the bonding surface Wa of the target substrate W (step S104). Thereafter, the second transfer device 32 removes the target substrate W from the second hydrophilizing device 36 and transfers it to the second storage device 50. Subsequently, the third transfer device 52 removes the target substrate W from the second storage device 50 and transfers it to the bonding device 60.

[0036] Next, the bonding device 60 separates the die D from the carrier E, and bonds the die D to the target substrate W by orienting the bonding surface Da of the separated die D toward the bonding surface Wa of the target substrate W (step S105). Note that when multiple dies D are electrically connected to one device W2, bonding of the die D to the target substrate W is performed for each type of die D.

[0037] The target substrate W after the die D has been bonded is transported to the cassette C2. First, the third transport device 52 removes the target substrate W with the bonded die D from the bonding device 60 and transports it to the second storage device 50. Next, the second transport device 32 removes the target substrate W with the bonded die D from the second storage device 50 and transports it to the first storage device 30. Finally, the first transport device 22 removes the target substrate W with the bonded die D from the first storage device 30 and stores it in the cassette C2.

[0038] The carrier E from which the die D has been separated is stored in the cassette C4. First, the third conveying device 52 takes out the carrier E from which the die D has been separated from the bonding device 60 and conveys it to the second storage device 50. Next, the second conveying device 32 takes out the carrier E from which the die D has been separated from the second storage device 50 and conveys it to the first storage device 30. Finally, the first conveying device 22 takes out the carrier E from which the die D has been separated from the first storage device 30 and stores it in the cassette C4.

[0039] Next, an example of a bonding apparatus 60 will be described with reference to Fig. 5 . The bonding apparatus 60 individually separates a plurality of dies D from a carrier E and bonds them to a target substrate W. The bonding apparatus 60 includes, for example, a carrier holding unit 61, a substrate holding unit 62, a transport unit 63, and a control circuit 93. The carrier holding unit 61 holds the carrier E. The substrate holding unit 62 holds the target substrate W. The transport unit 63 transports the dies D from the carrier E held by the carrier holding unit 61 to the target substrate W held by the substrate holding unit 62. The control circuit 93 may be part of the control circuit 9.

[0040] Next, an example of the transfer unit 63 will be described with reference to Figures 6 and 7. The transfer unit 63 includes, for example, a pickup unit 64 and a mount unit 65. The pickup unit 64 separates the die D from the carrier E held by the carrier holding unit 61 and transfers it. The pickup unit 64 may turn the die D upside down while transferring the die D. The bonding surface Da of the die D can face downward. The mount unit 65 receives the die D from the pickup unit 64 and bonds the received die D to the target substrate W held by the substrate holding unit 62.

[0041] The pickup unit 64 has, for example, a suction head 64a and a moving mechanism 64b. The suction head 64a suctions the die D. Since the suction head 64a suctions the joining surface Da of the die D, the suction head 64a may be suctioned in a non-contact manner to prevent contamination of the joining surface Da. The moving mechanism 64b moves the suction head 64a in the X-axis direction, the Y-axis direction, and the Z-axis direction. The moving mechanism 64b may also turn the suction head 64a upside down, thereby turning the die D upside down. The joining surface Da of the die D can be turned upside down.

[0042] The mount unit 65 has, for example, a suction head 65a and a moving mechanism 65b. The suction head 65a suctions the die D from the side opposite to the suction head 64a. The suction head 65a suctions a surface Db of the die D opposite to the joining surface Da. Since it does not matter if the surface Db opposite to the joining surface Da becomes dirty, the suction head 65a may come into contact with the die D. This can improve the suction force and suppress misalignment.

[0043] The movement mechanism 65b moves the suction head 65a in the Z-axis direction to bond the die D to the target substrate W. To improve the accuracy of the bonding position, the movement mechanism 65b may move the suction head 65a in the X-axis direction and the Y-axis direction, or may rotate the suction head 65a about the vertical axis. The amount of movement or rotation required to improve the accuracy of the bonding position is small, and the suction head 65a does not need to move much when viewed from above.

[0044] The bonding device 60 includes a pressing unit 66 and an adsorption unit 67. The pressing unit 66 presses the resin film E2, for example, by supplying gas to the through-hole E3 of the carrier substrate E1 or by inserting a pin (not shown) into the through-hole E3. The resin film E2 blocks the through-hole E3 and is pressed by the gas or the pin. The adsorption unit 67 adsorbs the carrier substrate E1 around the pressing unit 66.

[0045] The pressing portion 66 deforms the resin film E2 while the suction portion 67 suppresses deformation of the carrier substrate E1 around the pressing portion 66. The resin film E2 can be deformed only in the vicinity of one of the multiple dies D, forming a wedge-shaped gap between the resin film E2 and the die D, allowing the die D to be smoothly separated from the resin film E2. Details of the pressing portion 66 and the suction portion 67 will be described later.

[0046] The bonding device 60 may include a carrier moving unit 68. The carrier moving unit 68 moves the carrier E together with the carrier holding unit 61. The carrier moving unit 68 moves the carrier E, for example, in the X-axis direction and the Y-axis direction. This allows the pressing unit 66 and the suction unit 67 to press multiple dies D in a desired order without the need for the pressing unit 66 and the suction unit 67 to move in the X-axis direction and the Y-axis direction. Furthermore, the pickup unit 64 can receive the dies D at the same receiving position every time. This simplifies the operation of the pickup unit 64. The carrier moving unit 68 may also move the carrier E in the Z-axis direction.

[0047] The bonding device 60 does not necessarily have to include the carrier moving unit 68. That is, the carrier holding unit 61 may be fixed. In this case, the receiving position at which the pickup unit 64 receives the die D changes for each die D. Therefore, the pressing unit 66 and the suction unit 67 are moved in the X-axis direction and the Y-axis direction in accordance with the change in the receiving position.

[0048] The bonding apparatus 60 may include a substrate moving unit 69. The substrate moving unit 69 moves the target substrate W together with the substrate holder 62. The substrate moving unit 69 moves the target substrate W, for example, in the X-axis direction and the Y-axis direction. This makes it possible to change the bonding position of the die D relative to the target substrate W. As a result, the pickup unit 64 can deliver the die D to the mount unit 65 at the same delivery position every time. This simplifies the operation of the pickup unit 64. The substrate moving unit 69 may also move the target substrate W in the Z-axis direction.

[0049] The bonding device 60 may include at least one of a first imaging unit 71, a second imaging unit 72, and a third imaging unit 73 in order to improve the accuracy of the bonding position of the die D relative to the target substrate W. Note that the first imaging unit 71, the second imaging unit 72, and the third imaging unit 73 do not have to capture an image every time the die D and the target substrate W are bonded, and may capture images periodically.

[0050] 6, the first imaging unit 71 captures an image of the alignment marks on the bonding surface Da of the die D held by the suction head 65a. The number of alignment marks to be captured is, for example, two, but is not particularly limited. The alignment marks may be dedicated marks or may be part of the electronic circuit of the die D.

[0051] The first imaging unit 71 is disposed, for example, below the suction head 65a. The first imaging unit 71 transmits the captured image to the control circuit 93. The control circuit 93 processes the image captured by the first imaging unit 71 to detect the position of the die D in the first coordinate system set for the suction head 65a.

[0052] 7, the second imaging unit 72 captures an image of the alignment marks on the bonding surface Wa of the target substrate W held by the substrate holding unit 62. The number of alignment marks to be captured is, for example, two, but is not particularly limited. The alignment marks may be dedicated marks or may be part of the electronic circuit of the device W2 on the target substrate W.

[0053] The second imaging unit 72 is disposed, for example, above the board holding unit 62 and is provided, for example, on the suction head 65a. The second imaging unit 72 transmits the captured image to the control circuit 93. The control circuit 93 processes the image captured by the second imaging unit 72 to detect the position of the device W2 in the second coordinate system set in the board holding unit 62.

[0054] The control circuit 93 aligns the die D held by the suction head 65a with the device W2 on the target substrate W held by the substrate holder 62, using an image captured by at least one of the first imaging unit 71 and the second imaging unit 72. The alignment is performed by controlling at least one of the movement mechanism 65b and the substrate moving unit 69. Before bonding the die D and the target substrate W, the position of the die D or the device W2 can be corrected, thereby improving the accuracy of the bonding position.

[0055] After the die D and the device W2 are bonded, the third imaging unit 73 simultaneously captures images of both the alignment mark on the bonding surface Da of the die D and the alignment mark on the bonding surface Wa of the target substrate W. The third imaging unit 73 captures images of the alignment marks of the die D and the target substrate W, for example, by transmitting light through the die D. The third imaging unit 73 is configured, for example, by an infrared camera.

[0056] When the third imaging unit 73 captures an image of the alignment marks of the die D and the target substrate W through the die D, it is disposed, for example, above the substrate holding unit 62 and is provided, for example, on the suction head 65a. The third imaging unit 73 transmits the captured image to the control circuit 93. The control circuit 93 processes the image captured by the third imaging unit 73 to detect a deviation between the actual bonding position and the target bonding position.

[0057] The control circuit 93 uses the image captured by the third imaging unit 73 to align the die D held by the suction head 65a with the target substrate W held by the substrate holder 62 in the next and subsequent bonding of the die D and the target substrate W. The position of the die D or the target substrate W can be corrected taking into account the behavior of the bonding device 60, and the accuracy of the bonding position can be improved.

[0058] Next, an example of the pressing portion 66 and the suction portion 67 will be described with reference to Figure 8. The pressing portion 66 presses the resin film E2 by supplying gas, for example, to the through-hole E3 of the carrier substrate E1. The gas is, for example, air, nitrogen gas, or a rare gas. The suction portion 67 suctions the carrier substrate E1 around the pressing portion 66. While the suction portion 67 suppresses deformation of the carrier substrate E1 around the pressing portion 66, the pressing portion 66 deforms the resin film E2.

[0059] When the pressing portion 66 presses the resin film E2, the carrier substrate E1 may be gently deformed around the pressed location as shown by the dashed line in Fig. 8B. This gentle deformation is suppressed by the suction portion 67. The resin film E2 can be deformed only in the vicinity of one of the multiple dies D, forming a wedge-shaped gap between the resin film E2 and the die D, allowing the die D to be smoothly separated from the resin film E2.

[0060] The fact that the suction portion 67 suppresses the gradual deformation of the carrier substrate E1 is particularly effective when the pressing portion 66 presses the resin film E2 with gas pressure, because if the carrier substrate E1 is gradually deformed as shown by the dashed line in Figure 8(B), gas will leak from the gas chamber formed between the carrier substrate E1 and the pressing portion 66.

[0061] The pressing unit 66 has, for example, a pressing head 66a. The pressing head 66a forms a gas chamber between itself and the carrier substrate E1. The gas chamber communicates with a through-hole E3 located in a die placement area F of the resin film E2. The die placement area F is an area where one die D is placed. The number of through-holes E3 located in the die placement area F may be multiple or may be one.

[0062] The pressing head 66a has, for example, an annular seal member 66b that contacts the carrier substrate E1 and a base wall 66c that holds the seal member 66b from the side opposite the carrier substrate E1. The seal member 66b is circular in this embodiment, but may also be rectangular in shape. A gas chamber is formed between the carrier substrate E1 and the base wall 66c and is sealed by the seal member 66b.

[0063] The pressing unit 66 has a gas supply mechanism 66d. The gas supply mechanism 66d supplies gas to the gas chamber. The gas supply mechanism 66d has, for example, an on-off valve 66d1 and a pressure controller 66d2 in the middle of a supply line that forms a gas flow path. The on-off valve 66d1 opens and closes the gas flow path. The pressure controller 66d2 controls the pressure of the gas supplied to the gas chamber. The gas supply mechanism 66d may also have a leak valve 66d3. The leak valve 66d3 exhausts gas from the gas chamber.

[0064] The suction portion 67 has, for example, a suction head 67a. One suction head 67a is provided in an annular shape to surround the pressing portion 66. This can suppress deformation of the carrier substrate E1 over the entire periphery of the pressing portion 66. In this embodiment, the suction head 67a is circular, but it may also be rectangular. Note that multiple suction heads 67a may be provided at intervals to surround the pressing portion 66.

[0065] The suction unit 67 includes, for example, a gas suction mechanism 67c. The gas suction mechanism 67c sucks gas from the suction head 67a, thereby generating a pressure (negative pressure) lower than atmospheric pressure on the surface of the suction head 67a facing the carrier substrate E1. The carrier substrate E1 can be vacuum-sucked to the suction head 67a by the pressure difference.

[0066] The suction head 67a may have an annular groove 67b on the surface facing the carrier substrate E1. The gas suction mechanism 67c sucks gas from the groove 67b, thereby generating a pressure (negative pressure) lower than atmospheric pressure on the surface of the suction head 67a facing the carrier substrate E1. The groove 67b is circular in this embodiment, but may also be rectangular in shape.

[0067] Next, a first example of dividing the gas chamber will be described with reference to Figure 9. The pressing unit 66 has a partition member 66e that divides the gas chamber into multiple small chambers. A gas supply mechanism 66d supplies gas to each of the multiple small chambers individually. An open / close valve 66d1 is provided for each small chamber (only one is shown in Figure 9). A pressure controller 66d2 and a leak valve 66d3 may also be provided for each small chamber (only one is shown in Figure 9).

[0068] The resin film E2 has a die placement area F, in which one die D is placed, spanning multiple through-holes E3. The gas chamber communicates with the multiple through-holes E3 located in the die placement area F. The die placement area F is divided into multiple compartments along, for example, concentric partition members 66e. Each compartment has at least one through-hole E3. The gas supply mechanism 66d supplies gas to the multiple small chambers in turn, thereby pressing the multiple compartments in turn.

[0069] The control circuit 93 controls the pushing of the multiple sections that make up the die placement area F in the desired direction in sequence. By peeling the die D and the resin film E2 in sequence for each section, the range of peeling can be expanded in the desired direction in sequence. The force required for peeling can be reduced compared to peeling all sections simultaneously.

[0070] In this embodiment, the control circuit 93 controls the pressing of a plurality of compartments in a desired direction in order, and while one compartment is pressed, another compartment is pressed. Alternatively, the control circuit 93 may control the pressing of one compartment to be released before pressing another compartment. In the compartment where the pressing is released, the die D and the resin film E2 remain peeled off.

[0071] Although not shown, the control circuit 93 may prohibit all sections from being pressed simultaneously. The fewer sections that are pressed simultaneously, the smaller the force pressing the resin film E2. Therefore, the suction force required to suppress deformation of the carrier substrate E1 is also reduced. As a result, the suction portion 67 can be made smaller.

[0072] 10, the control circuit 93 may perform control to sequentially press the die D (in other words, the die placement area F) in a direction from the periphery of the die D toward the center. This control is effective when the die D is thin. In the case where the die D is thin, if the pressing unit 66 first presses the center of the die D as shown in FIG. 11, the die D will deform so as to absorb the deformation of the resin film E2, and peeling will not occur.

[0073] 12, the control circuit 93 may perform control to sequentially press the die D (in other words, the die placement area F) in a direction from the center of the die D toward the periphery of the die D. If the die D is thick, the die D is less likely to deform. Therefore, even if the pressing unit 66 presses the center of the die D first, peeling will occur at the center of the die D.

[0074] The die D is usually rectangular in plan view. As shown in Figures 13 and 14, the die placement area F may be divided into multiple sections along striped partition members 66e. As shown in Figure 13, the control circuit 93 may perform control to sequentially push the die placement area F in a direction from one of two opposing sides of the die D to the other. Alternatively, as shown in Figure 14, the control circuit 93 may perform control to sequentially push the die placement area F in a desired direction along the diagonal of the die D.

[0075] 15, the die placement area F may be divided into multiple sections along radial partition members 66e. The control circuit 93 may perform control to sequentially push the die placement area F in a desired direction (clockwise or counterclockwise) along the periphery of the die D.

[0076] 16 , the pressing unit 66 may have pins 66f and actuators 66g that move the pins 66f. There may be a plurality of pins 66f and actuators 66g. The plurality of actuators 66g may divide the plurality of pins 66f into a plurality of groups and move them individually. The plurality of pins 66f can be used to sequentially press the plurality of sections that make up the die placement area F in a desired direction.

[0077] Although the embodiments of the joining device and joining method according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These naturally fall within the technical scope of the present disclosure.

[0078] This application claims priority based on Japanese Patent Application No. 2024-012125 filed with the Japan Patent Office on January 30, 2024, the entire contents of which are incorporated herein by reference.

[0079] 60 Bonding device 61 Carrier holding part 62 Substrate holding part 63 Transport part 66 Pressing part 67 Suction part W Target substrate D Die E Carrier E1 Carrier substrate E2 Resin film E3 Through hole

Claims

1. A bonding apparatus that individually separates multiple dies from a carrier and bonds them to a target substrate, wherein the carrier has a carrier substrate, multiple through holes penetrating the carrier substrate in the thickness direction, and a resin film provided on the carrier substrate's surface facing the dies, the bonding apparatus comprising: a carrier holding unit that holds the carrier, a substrate holding unit that holds the target substrate, and a transport unit that transports the dies from the carrier to the target substrate, and the bonding apparatus comprises: a pressing unit that presses the resin film by supplying gas to the through holes or inserting pins into the through holes, and an adsorption unit that adsorbs the carrier substrate around the pressing unit.

2. The joining device according to claim 1, wherein the suction portion has an annular suction head surrounding the pressing portion.

3. The bonding device according to claim 1, wherein the resin film has a die placement area in which one of the dies is placed, the die placement area spanning a plurality of the through-holes, and the bonding device is equipped with a control circuit, which controls the pressing of a plurality of compartments constituting the die placement area in a desired direction in sequence.

4. The bonding device according to claim 3, wherein the control circuit controls the die placement area to be pushed sequentially in a direction from the periphery of the die toward the center.

5. The bonding device according to claim 3, wherein the control circuit controls the die placement area to be pushed sequentially in a direction from the center of the die toward its periphery.

6. The bonding device according to claim 3, wherein the die is rectangular in plan view, and the control circuit controls the die placement area to be pushed sequentially in a direction from one of two opposing sides of the die to the other.

7. The bonding device according to claim 3, wherein the die is rectangular in plan view, and the control circuit controls the die placement area to be pushed in a desired direction in sequence along a diagonal line of the die.

8. The bonding apparatus according to claim 3, wherein the control circuit controls the die placement area to be pushed in a desired direction along the periphery of the die in sequence.

9. A bonding device according to any one of claims 3 to 8, wherein the pressing unit has a pressing head that forms a gas chamber between itself and the carrier substrate, a partition member that divides the gas chamber into a plurality of small chambers, and a gas supply mechanism that supplies the gas to the plurality of small chambers individually, the gas chamber communicating with a plurality of through holes located in the die placement area of the resin film, and the die placement area being divided into a plurality of compartments along the partition member.

10. A bonding method for individually separating multiple dies from a carrier and bonding them to a target substrate, wherein the carrier has a carrier substrate, a multiple number of through holes penetrating the carrier substrate in the thickness direction, and a resin film provided on the carrier substrate's surface facing the dies, the bonding method comprising: holding the carrier with a carrier holding unit; holding the target substrate with a substrate holding unit; and transporting the dies from the carrier to the target substrate, the bonding method comprising: a pressing unit that supplies gas to the through holes or inserts pins into the through holes pressing the resin film; and an adsorption unit that adsorbs the carrier substrate around the pressing unit.

11. The joining method according to claim 10, wherein the suction portion has an annular suction head surrounding the pressing portion.

12. The bonding method according to claim 10, wherein the resin film has a die placement area in which one of the dies is placed, the die placement area spanning a plurality of the through holes, and the bonding method includes sequentially pressing a plurality of compartments constituting the die placement area in a desired direction.

13. The joining method according to claim 12, further comprising sequentially pressing the die placement areas in a direction from the periphery of the die toward the center.

14. The bonding method of claim 12, further comprising sequentially pressing the die placement areas in a direction from the center of the die toward its periphery.

15. The joining method according to claim 12, wherein the die is rectangular in plan view, and the method comprises sequentially pressing the die placement area in a direction from one of two opposing sides of the die to the other.

16. The joining method according to claim 12, wherein the die is rectangular in plan view, and the method comprises sequentially pressing the die placement areas in desired directions along diagonals of the die.

17. The bonding method of claim 12, further comprising sequentially pressing the die placement areas in desired directions along the periphery of the die.

18. A bonding method according to any one of claims 12 to 17, wherein the pressing unit has a pressing head that forms a gas chamber between itself and the carrier substrate, a partition member that divides the gas chamber into a plurality of small chambers, and a gas supply mechanism that supplies the gas to the plurality of small chambers individually, the gas chamber communicating with a plurality of through holes located in the die placement area of the resin film, and the die placement area being divided into a plurality of compartments along the partition member.

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