Phosphor, optoelectronic component, and method for producing a phosphor

Abstract

The invention relates to a phosphor (1) having the general formula EA4-x-a-dSEx+aM1-b-cSi19-y-x-3cAly+x+3cN29-y+a-3b-2dOy-a+3b+2d:A, wherein: - EA is selected from Ca, Sr, Ba, Zn, or combinations thereof; - SE is selected from the group of trivalent rare-earth elements or combinations thereof; - M is selected from Sc, Y, Lu, Tm, Er, Ho, or combinations thereof; - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Er, or combinations thereof; - 0 ≤ d ≤ 1; - 0 ≤ x+a+d ≤ 4; - 0 ≤ b+c < 1; - 0 ≤ y+x+3c ≤ 19; - 0 ≤ y-a+3b+2d ≤ 10; and - 2*(4-x-a-d) + 3*(x+a) + 3* (1-b-c)+ 4*(19-y-x-3c) + 3*(y+x+3c)-3*(29-y+a-3b-2d)-2*(y-a+3b+2d) = 0. The invention also relates to an optoelectronic component (10) and to a method for producing a phosphor (1).

Description

[0001] 2023PF01062 12 February 2025P2023,1280 WO N - 1 -Description PHONOLUBRICANT, OPTOELECTRONIC COMPONENT, METHOD FOR PRODUCING A PHONOLUBRICANT. A phosphor and an optoelectronic component are specified. Furthermore, a method for producing a phosphor is specified. One object is to provide a phosphor with increased efficiency. Furthermore, the phosphor has better light quality. Further objects are to provide a method for producing such a phosphor with increased efficiency and an optoelectronic component with increased efficiency. A phosphor is specified. According to at least one embodiment, the phosphor has the general formula: EA4-xa-dSEx+aM1-b-cSi19-yx-3cAly+x+3cN29-y+a-3b-2dOy-a+3b+2d:A, where: - 0 ≤ d ≤ 1; - 0 ≤ x+a+d ≤ 4; - 0 ≤ b+c < 1; - 0 ≤ y+x+3c ≤ 19; - 0 ≤ y-a+3b+2d ≤ 10; and- 2*(4-xad) + 3*(x+a) + 3* (1-bc)+ 4*(19-yx-3c) +3*(y+x+3c)-3*(29-y+a-3b-2d)-2*(y-a+3b+2d) = 0.According to at least one embodiment of the phosphor, RE is selected from the group of trivalent rare earth elements or combinations thereof. Rare earth elements include, in the present case, the chemical elements of the third subgroup of the periodic table as well as the lanthanides. Rare earth elements 2023PF01062 February 12, 2025 P2023,1280 WO N. - 2 -are generally selected from the group consisting of scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium. The term “valence” in relation to a specific element refers to how many elements with a singly opposite charge are needed in a chemical compound to achieve charge balance. The term “valence” therefore includes the charge number of the element. Trivalent elements are elements with a valence of three. Trivalent elements are often triply positively charged in chemical compounds and have a charge number of +3. Charge balance in a chemical compound can, for example, take place via an element that is triply negatively charged or via three elements that are singly negatively charged.According to at least one embodiment, EA is selected from Ca, Sr, Ba, Zn, or combinations thereof. According to at least one further embodiment, M is selected from Sc, Y, Lu, Tm, Er, Ho, or combinations thereof. According to at least one embodiment, A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Er, or combinations thereof. According to at least one embodiment of the phosphor, A is an activator element. The activator element changes the electronic structure of the host lattice in such a way that 2023PF01062 February 12, 2025P2023,1280 WO N. - 3 -Electromagnetic radiation with an excitation spectrum is absorbed by the phosphor and stimulates an electronic transition in the activator element, which returns to the ground state by emitting electromagnetic radiation with an emission spectrum. The activator element, which is incorporated into the host lattice, is thus responsible for the wavelength-converting properties of the phosphor. The term "wavelength-converting" in this context means that radiated electromagnetic radiation of a specific wavelength range, in this case the excitation spectrum or first wavelength range, is converted into electromagnetic radiation of another, preferably longer wavelength range, in this case the emission spectrum or second wavelength range.As a rule, a wavelength-converting component absorbs electromagnetic radiation of an incident wavelength range, converts it through electronic processes at the atomic and / or molecular level into electromagnetic radiation of a different wavelength range, and re-emits the converted electromagnetic radiation. In particular, pure scattering or pure absorption is not understood here as wavelength-converting. Here and below, phosphors are described using molecular formulas. The elements listed in the molecular formulas are present in charged form. Here and below, elements and / or atoms in relation to the molecular formulas of the phosphors therefore mean ions in the form of cations and anions, even if this is not explicitly stated. This also applies to element symbols. - 4 -if these are given without charge number for the sake of clarity. It is possible with the given molecular formulas that the phosphor comprises further elements, for example in the form of impurities. These impurities together comprise a maximum of 5 mol%, in particular a maximum of 1 mol%, preferably a maximum of 0.1 mol%. The phosphor is generally uncharged externally. This means that a complete charge balance between positive and negative charges can exist within the phosphor. However, it is also possible that the phosphor formally does not have a complete charge balance to a small extent. Reasons for this include impurities. According to at least one embodiment, the phosphor comprises a mixture. The mixture comprises, for example, the general formula EA 4-x-a-d SE x+a M 1-b-c Si 19-y-x- 3c Al y+x+3c N 29-y+a-3b-2d O y-a+3b+2d:A. Further components of the mixture may be, for example, reactants that did not react during the preparation of the phosphor, impurities and / or secondary phases that were formed during the reaction. According to at least one embodiment, the phosphor has the general formula EA 4-x-a-d SE x+a M 1-b-c Si 19-y-x-3c Al y+x+3c N 29-y+a-3b- 2dOy-a+3b+2d:A, where- EA is selected from Ca, Sr, Ba, Zn or combinations thereof,- SE is selected from the group of trivalent rare earth elements or combinations thereof,2023PF01062 12 February 2025P2023,1280 WO N - 5 -- M is selected from Sc, Y, Lu, Tm, Er, Ho or combinations thereof, - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Er or combinations thereof, - 0 ≤ d ≤ 1; - 0 ≤ x+a+d ≤ 4; - 0 ≤ b+c < 1; - 0 ≤ y+x+3c ≤ 19; and - 0 ≤ y-a+3b+2d ≤ 10; and - 2*(4-xad) + 3*(x+a) + 3*(1-bc) + 4*(19-yx-3c) + 3*(y+x+3c) - 3*(29-y+a-3b-2d) - 2*(y-a+3b+2d) = 0. According to a further preferred embodiment, the phosphor is free of monovalent ions such as sodium ions, potassium ions, and / or lithium ions. This means that the phosphor has no monovalent ions. According to at least one embodiment of the phosphor, 0 ≤ d ≤ 1; 0 ≤ x+a+d ≤ 4; 0 ≤ b+c < 1; 0 ≤ y+x+3c ≤ 19; 0 ≤ y-a+3b+2d ≤ 10; and 2*(4-xad) + 3*(x+a) + 3*(1-bc)+4*(19-yx-3c) + 3*(y+x+3c)-3*(29-y+a-3b-2d)-2*(y-a+3b+2d) = 0. According to at least one embodiment, x + a = 0. In other words, no SE is present in the phosphor.According to at least one embodiment, 0 < y + x + 3c < 19 and / or 0 < y - a + 3b + 2d < 19. According to at least one embodiment, 0 < y + x + 3c < 19 and / or 0 < y - a + 3b + 2d < 10.2023PF01062 February 12, 2025P2023,1280 WO N. - 6 - According to at least one embodiment, A comprises cerium or consists of this element. Cerium is in particular in the form Ce 3+Preferably, A represents the element cerium. In Eu-activated phosphors, quenching occurs even at low irradiances of around 100 mW / mm², which can lead to a reduction in quantum efficiency. Quenching here and in the following refers to the presence of processes that lead to the absorption of a photon in the first wavelength range, but without the subsequent emission of a photon in the second wavelength range or emission spectrum. The photon in the first wavelength range does not trigger transitions in the visible spectral range, but is converted into lattice vibrations. This leads to a reduction in efficiency. Quenching can be caused, for example, by internal conversion or energy transfer, for example, to the host lattice. Conventional applications of phosphors sometimes operate at significantly higher irradiances than 100 mW / mm². Phosphors containing Ce 3+as an activator element, show lower quenching even at higher irradiances. Therefore, the use of Ce 3+ advantageous as activator element A. An excited state of Ce 3+ has a typical lifetime of usually less than 100 nanoseconds. The typical lifetime of the excited state of Eu 2+ is typically in the range of 1 to 10 microseconds. Due to the shorter lifetime of the excited state of Ce, a phosphor with Ce as the activator element exhibits lower quenching at high irradiances. For example, the conventional phosphor Y3Al5O 12 :Ce 3+ Only above an irradiance of 10 W / mm² does significant radiation-induced quenching occur. The use of the 2023PF01062 12 February 2025P2023,1280 WO N - 7 - conventional phosphors (Sr,Ba)Si2O2N2:Eu 2+ or β-SiAlON:Eu 2+is also limited to low irradiances. The maximum emission is reached at approximately 0.7W / mm2 irradiance due to saturation and quenching effects. According to at least one embodiment of the phosphor, A has a molecular fraction of between 0.01% and 15% inclusive, based on EA, SE, and M. In other words, between 0.01% and 15% inclusive of the atomic positions of EA, SE, and / or M are occupied by the element A. Preferably, A has a molecular fraction of between 0.01% and 5% inclusive, based on EA, SE, and M. According to at least one further embodiment, EA comprises Sr. For example, EA consists of strontium. Strontium is present in particular in the form Sr. 2+ According to at least one further embodiment, SE and / or M comprises yttrium. The yttrium is in particular in the form Y 3+For example, SE consists of yttrium. For example, M consists of yttrium. Here, the elements SE and EA lie crystallographically on the same layers and the element M lies on a further layer. According to at least one embodiment, the phosphor has the formula EA 4-m Y 1-n (Si,Al) 19 (N,O) 29 :Ce 3+ EA is selected from Ca, Sr, Ba, Zn or combinations thereof. According to at least one embodiment, the phosphor has the formula Sr4-m-oY1-n-pSi19-t+2m+3nAlT-2m-3nN29-t-2o-3pOt+2o+3p:Ce 3+ on, where2023PF01062 12 February 2025P2023,1280 WO N - 8 - - 0 ≤ t ≤ 19; - t ≥ 2m; - t ≥ 3n;- 0 ≤ m ≤ 3;- 0 ≤ o ≤ 3;- 0 ≤ n ≤ 1;- 0 ≤ p ≤ 1;- 0 ≤ m + o < 4;- 0 ≤ n + p < 1;- 0 ≤ t + 2o + 3p ≤ 10; and- 2*(4-mo) + 3*(1-np) + 4*(19-t+2m+3n) + 3*(t-2m-3n)-3*(29-t-2o-3p)-2*(t+2o+3p)=0. Preferably, m is between 0 and 1 inclusive. More preferably, o is between 0 and 1 inclusive. In another notation, the phosphor has the formula Sr 4-m Y 1-n (Si,Al) 19 (N,O) 29 :Ce 3+The phosphor in this embodiment is therefore free of monovalent elements such as potassium, sodium, and lithium. The phosphor preferably converts electromagnetic radiation in the UV to blue wavelength range into electromagnetic radiation in the blue-green to green wavelength range. The phosphor efficiently converts the electromagnetic radiation even at high irradiances. The wavelength range of the emitted electromagnetic radiation depends, among other things, on the excitation wavelength. According to at least one embodiment, the phosphor has a host lattice comprising a structure with a 2023PF01062 February 12, 2025P2023,1280 WO N - 9 -trigonal space group. In particular, the phosphor comprises a crystalline, for example, ceramic host lattice. The phosphor is, for example, a ceramic material. The crystalline host lattice is generally composed in particular of a three-dimensional, periodically repeating unit cell. In other words, the unit cell is the smallest recurring unit of the crystalline host lattice, reflecting the symmetry of the crystal. The elements EA, SE, M, Al, N, Si, O, and A each preferentially occupy defined, symmetrical positions, so-called atomic positions, within the three-dimensional unit cell of the host lattice. According to at least one embodiment, the phosphor crystallizes in the trigonal space group P3. This corresponds to number 143. According to at least one embodiment, a crystal structure of the host lattice of the phosphor comprises corner-sharing (Si,Al)(N,O)4 tetrahedra.In particular, the crystal structure of the host lattice of the phosphor is a framework (nitrido)silicate or belongs to the group of framework (nitrido)silicates. For example, the crystal structure exclusively features corner-sharing (Si,Al)(N,O)4 tetrahedra. The (Si,Al)(N,O)4 tetrahedra typically have a tetrahedral vacancy. The tetrahedral vacancy is a region within the respective tetrahedron. For example, the term "tetrahedral vacancy" refers to the region within the 2023PF01062 February 12, 2025P2023,1280 WO N. - 10 -Tetrahedron, which remains free when touching spheres are placed at the corners of the tetrahedron. The N,O atoms preferably span the (Si,Al)(N,O)4 tetrahedron, with the Si,Al atom located in the tetrahedral gap of the (Si,Al)(N,O)4 tetrahedron spanned by the N,O atoms. In other words, the tetrahedra are centered around the Si,Al atom. In particular, all atoms that span the tetrahedron have a similar distance to the Si,Al atom that is located in the tetrahedral gap. Corner-sharing means that at least two of the (Si,Al)(N,O)4 tetrahedra are connected via an N,O vertex. The two (Si,Al)(N,O)4 tetrahedra are corner-sharing. Preferably, the N,O atom is a common N,O atom of the corner-sharing (Si,Al)(N,O)4 tetrahedra. In other words, the N,O atom that links the (Si,Al)(N,O)4 tetrahedra is preferably part of both the (Si,Al)(N,O)4 tetrahedron and another (Si,Al)(N,O)4 tetrahedron.For example, all four corners are each linked to a corner of another (Si,Al)(N,O)4 tetrahedron. The corner-sharing (Si,Al)(N,O)4 tetrahedra form a tetrahedral network. According to at least one embodiment, the crystal structure of the host lattice of the phosphor has a first layer and a second layer, wherein the first layer and the second layer comprise (Si,Al)(N,O)4 tetrahedra. According to at least one embodiment, the first layer comprises three-membered rings. The three-membered rings comprise three corner-sharing (Si,Al)(N,O)4 tetrahedra. In other words, three corner-sharing (Si,Al)(N,O)4-2023PF01062 February 12, 2025P2023,1280 WO N. - 11 -Tetrahedron forms a three-membered ring. Three three-membered rings are thus connected to each other via corners, forming a nine-membered unit, at the center of which is a first six-membered ring. In other words, the first six-membered ring is formed by two (Si,Al)(N,O)4 tetrahedra of each of the three three-membered rings. If the six-membered ring is located in the first layer, it is referred to as the first six-membered ring. In a sectional view, the shape of the first six-membered ring of the formed nine-membered unit is a triangle. According to at least one embodiment, a channel is located in the center of the first six-membered ring. The channel is preferably free of (Si,Al)(N,O)4 tetrahedra and / or ions. The channel can also be referred to as a tetrahedral defect. According to at least one further embodiment, the first layer has a plurality of nine-membered units. The nine-membered units are each connected to each other via corners. In this case, three corners of the nine-membered unit are connected to corners of further nine-membered units.In other words, the three corners of the triangle of the first six-membered ring are linked to further corners of further triangles. According to at least one further embodiment, the second layer comprises, among other things, units of four corner-sharing (Si,Al)(N,O)4 tetrahedra. This four-membered unit is constructed by a (Si,Al)(N,O)4 tetrahedron in the center of the unit, which is surrounded by three further corner-sharing (Si,Al)(N,O)4 tetrahedra. According to at least one further embodiment, the second layer comprises, as a further structural element, six interconnected 2023PF01062 February 12, 2025P2023,1280 WO N. - 12 -corner-sharing (Si,Al)(N,O)4 tetrahedra, which form a second six-membered ring. The second six-membered ring differs from the first six-membered ring, among other things, in that the second six-membered ring is located in the second layer. The second six-membered ring is, for example, linked via the four-membered unit to other second six-membered rings via shared corners. Each four-membered unit is linked via shared corners to three second six-membered rings. A second six-membered ring is, in turn, linked to three four-membered units. Nine-membered rings are formed, which are formed by six (Si,Al)(N,O)4 tetrahedra of three second six-membered rings and three (Si,Al)(N,O)4 tetrahedra of the three four-membered units. The second layer preferably has at least one second six-membered ring made of (Si,Al)(N,O)4 tetrahedra and at least one nine-membered ring made of (Si,Al)(N,O)4 tetrahedra.According to at least one embodiment, the (nitrido)silicate framework of the phosphor is formed exclusively from corner-sharing (Si,Al)(N,O)4 tetrahedra. According to at least one embodiment, a framework structure is constructed from alternating first and second layers. The first and second layers are connected to one another via shared (Si,Al)(N,O)4 tetrahedral corners. There are a total of two layers per unit cell: a first and a second layer. According to at least one embodiment, the first layer has first gaps, and the second layer has second gaps and third gaps. EA ions or SE ions are embedded in the first gaps, and EA ions and / or SE ions, as well as M ions, are embedded in the second gaps of the second layer. 2023PF01062 February 12, 2025P2023,1280 WO N. - 13 -In particular, the first gaps contain exclusively EA ions or RE ions. The EA ions can be replaced by RE ions. By substituting the RE ions for the same position as the EA ions, a mixed population is created in the phosphor. For example, the first layer contains exclusively EA ions, preferably strontium ions. The first gaps differ from the channels of the first layer. The channels in the first layer are located in the center of a first six-ring. In other words, the channel is located in the center of three three-rings. The first gaps are located in the center of three corner-sharing nine-units. In other words, three nine-units with the first six-rings in the center are linked together via corner sharing, forming a first gap in the middle. The first gap appears like a triangle in a sectional view.For example, three EA ions and / or RE ions are located in the first gaps. In particular, both EA ions and / or RE ions are located in the second gaps. In particular, M ions are located in the third gaps. For example, strontium and Y ions are located exclusively in the second gaps. In particular, the EA ions are located in the second gaps in the nine-membered rings. The M ions are located in particular in the third gaps of the second six-membered rings. The EA ions can be substituted by RE ions. The A ions, for example cerium, statistically preferentially occupy the same positions as the RE ions and / or M ions and EA ions. Thus, they can be located in the first, second, and third gaps. 2023PF01062 February 12, 2025P2023,1280 WO N. - 14 -According to at least one embodiment, the second gaps for the EA ion are fully occupied. Alternatively, the position of the EA ion can also be partially occupied. The EA ions and the SE ions, in particular, occupy the same crystallographic positions. According to at least one further embodiment, the M ions, for example, Y ions, are arranged in the third gaps of the second six-membered ring. In particular, the M ion, for example, the yttrium ion, is five-fold coordinated by N,O ions. This is due to the ionic radius of the yttrium ion. According to at least one embodiment, the phosphor absorbs electromagnetic radiation in the near ultraviolet to blue spectral range. According to at least one further embodiment, the phosphor is excitable between 350 nm and 470 nm inclusive. For example, the phosphor absorbs electromagnetic radiation with a wavelength of approximately 405 nm, approximately 440 nm, or approximately 448 nm.Other wavelengths for exciting the phosphor are conceivable. According to at least one embodiment of the phosphor, the phosphor emits electromagnetic radiation. The emitted electromagnetic radiation can be described in the form of an emission spectrum. The emission spectrum has an emission peak with an emission maximum that lies between 450 nanometers and 550 nanometers. For example, the emission maximum of the phosphor is at excitation of 440 nm or 448 nm. - 15 -between 504 nm and 550 nm. At an excitation wavelength of 405 nm, the emission maximum is in a range between 459 nm and 499 nm. The emission maximum of the phosphor is approximately 479 nm at an excitation wavelength of 405 nm, approximately 524 nm at an excitation wavelength of 440 nm, and approximately 530 nm at an excitation wavelength of 448 nm. The emission spectrum is the intensity distribution of the electromagnetic radiation emitted by the phosphor after excitation with electromagnetic radiation of the first wavelength range. The emission spectrum is usually represented in the form of a diagram in which a spectral intensity or a spectral radiant flux per wavelength interval ("spectral intensity / spectral radiant flux") of the electromagnetic radiation emitted by the phosphor is shown as a function of the wavelength λ.In other words, the emission spectrum represents a curve with the wavelength on the x-axis and the spectral intensity or spectral radiant flux on the y-axis. According to at least one embodiment, a dominant wavelength (λ) is present. Dom ) of the electromagnetic radiation emitted by the phosphor between 470 nm and 575 nm inclusive. According to at least one embodiment, a dominant wavelength (λ Dom ) of the electromagnetic radiation emitted by the phosphor at an excitation wavelength of 440 nm or 448 nm between2023PF01062 12 February 2025P2023,1280 WO N - 16 -including 520 nanometers and including 575 nanometers. For example, the dominant wavelength at an excitation wavelength of 440 nm is approximately 540 nm and the dominant wavelength at an excitation wavelength of 448 nm is approximately 555 nm. According to at least one embodiment, a dominant wavelength (λ Dom) of the electromagnetic radiation emitted by the phosphor at an excitation wavelength of 405 nanometers between 479 nanometers and 519 nanometers inclusive. For example, the dominant wavelength at an excitation wavelength of 405 nm is approximately 499 nm. The dominant wavelength is advantageously in the blue-green to green wavelength range. To determine the dominant wavelength of the electromagnetic radiation emitted by the phosphor, a straight line is drawn in the CIE standard diagram, starting from the white point through the color coordinate of the electromagnetic radiation. The intersection of the straight line with the spectral color line delimiting the CIE standard diagram denotes the dominant wavelength of the electromagnetic radiation. In other words, the dominant wavelength is the monochromatic wavelength that produces the same color impression as a polychromatic light source.The dominant wavelength is the wavelength perceived by the human eye. Generally, the dominant wavelength differs from the wavelength of the emission maximum.2023PF01062 February 12, 2025P2023,1280 WO N. - 17 -According to at least one preferred embodiment, the half-width of the electromagnetic radiation emitted by the phosphor is between 50 nm and 125 nm inclusive. The half-width of the electromagnetic radiation emitted by the phosphor preferably ranges from 80 nm to 110 nm inclusive. Particularly preferably, the half-width of the electromagnetic radiation emitted by the phosphor ranges from 80 nm to 100 nm inclusive. For example, the half-width is approximately 90 nm. The term half-width refers to a curve with a maximum, such as the emission spectrum, where the half-width is the width of that region on the x-axis that corresponds to the two y-values ​​that correspond to half the maximum. Furthermore, an optoelectronic component is specified.The phosphor is particularly suitable and intended for use in an optoelectronic component. Features and embodiments that are implemented solely in connection with the phosphor and / or the method can also be implemented in the optoelectronic component, and vice versa. According to at least one embodiment of the optoelectronic component, the optoelectronic component comprises a semiconductor chip that, during operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface. 2023PF01062 February 12, 2025P2023,1280 WO N. - 18 -The semiconductor chip is, for example, a light-emitting diode chip or a laser diode chip. The semiconductor chip preferably comprises an epitaxially grown semiconductor layer sequence with an active zone configured to generate electromagnetic radiation. For this purpose, the active zone comprises, for example, a pn junction, a double heterostructure, a single quantum well, or particularly preferably a multiple quantum well structure. During operation, the semiconductor chip preferably emits electromagnetic radiation from the ultraviolet spectral range and / or from the visible spectral range, particularly preferably from the blue spectral range. According to a further embodiment, the optoelectronic component comprises a conversion element with a phosphor described herein, which converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of the emission spectrum.The first wavelength range is preferably entirely or partially the excitation spectrum of the phosphor. The phosphor converts electromagnetic radiation of the first wavelength range entirely or partially into electromagnetic radiation of the emission spectrum. The conversion element comprises, for example, in addition to the phosphor described here, a matrix material in which the phosphor is embedded in the form of particles. The matrix material is preferably selected from the group of polysiloxanes, epoxides, glasses, and hybrid materials. For example, one or more 2023PF01062 February 12, 2025P2023,1280 WO N. - 19 - Further phosphors are embedded. Preferably, the further phosphors are red- or yellow-emitting phosphors. The further phosphors are, for example, garnet phosphors or nitride phosphors. The garnet phosphor is particularly preferably a YAG phosphor with the chemical formula Y3Al5O12 :Ce 3+ or a LuAG phosphor of the chemical formula Lu3Al5O 12 :Ce 3+ Nitride phosphors preferentially convert blue primary radiation into red secondary radiation. The nitride phosphor can be, for example, an alkaline earth silicon nitride, an oxynitride, an aluminum oxynitride, a silicon nitride, or a sialon. For example, the nitride phosphor is (Ca,Sr,Ba)AlSiN3:Eu. 2+ (CASN). The other phosphors are particularly preferably selected from the following group: Ce 3+ doped garnets such as YAG and LuAG, for example (Y, Lu,Gd,Tb)3(Al 1-x ,Ga x )5O 12 :Ce 3+ ; Eu 2+ doped nitrides, for example (Ca,Sr)AlSiN3:Eu 2+ , Sr(Ca,Sr)Si2Al2N6:Eu 2+ (SCASN), (Sr,Ca)AlSiN3*Si2N2O:Eu 2+ , (Ca,Ba,Sr)2Si5N8:Eu 2+ , SrLiAl3N4:Eu 2+ , SrLi2Al2O2N2:Eu 2+ ; Ce 3+doped nitrides, for example (Ca,Sr)Al(1-4x / 3)Si(1+x)N3:Ce; (x = 0.2 – 0.5);Eu 2+ doped sulfides, (Ba,Sr,Ca)Si2O2N2:Eu 2+ , SiAlONe, nitrido orthosilicates (e.g. AE 2-x-a RE x Eu a Si 1-y O 4-x-2y N x ), orthosilicates (Ba,Sr,Ca)2SiO4:Eu 2+ ; Chlorosilicates (e.g. Ca8Mg(SiO4)4Cl2:Eu 2+ ); Mn 4+ doped fluorides, for example (K,Na)2(Si,Ti)F6:Mn 4+ ; Eu 2+ or Ce 3+ doped litho-silicates, such as (Li,Na,K,Rb,Cs)(Li3SiO4):E with E as Eu 2+ , Ce 3+ , or (Sr,Li)Li3AlO4:Eu 2+ or SrLi3AlO4:Eu 2+ . Other possible materials for the phosphors are in particular the following aluminum-containing and / or silicon-containing phosphor particles: 2023PF01062 12 February 2025P2023,1280 WO N - 20 - (Ba 2+ 1-x-ySrxCay)SiO4:Eu (0^x^1, 0^y^1), (Ba1-x- S 2+ 2+y rxCay)3SiO5:Eu (0 ^ x ^ 1, 0 ^ y ^ 1), Li2SrSiO4:Eu , Oxo-Nitride wie (Ba Sr Cay)Si2O 2+1-xy x 2N2:Eu (0 ^ x ^ 1; 0 ^ y ^ 1), S ON : ON SiA2+, -EuC 2+2 3 2 4 axSi6ON10:Eu (0 ^ x ^ 1), (Ba1-xSrx)Y2Si2Al2O2N5:Eu2+ (0 ^ x ^ 1), SrxSi(6-y)AlyOyN(8-y):Eu2+ (0.05^ x ^ ^ 0.05 ; Ba ^0 . 2+ 2+3Si6O12N2:Eu , Si6-zAlzOzN8-z:Eu(0 ^ z ^ 0.42), MS 2+x i12-m-nAlm+nOnN16-n:Eu (M = Li, Mg, Ca, Y; x= m / v; v = Wertigkeit von M, x M ^ 2), x 3+xSi12-m-nAlm+nN16-n:Ce ,AE 2-x-a TOO x Eu a Flaw 1-y THEIR 4-x-2y N x (AE = Sr, Ba, Ca, Mg; RE = Rare metal elements), AE 2-x-a TOO x Eu a Flaw 1-y THEIR 4-x-2y N x (AE = Sr,Ba, Ca, Mg; RE = Rare metal elements), Ba 2+3Si6O12N2:Eu or nitrides such as La3Si6N 11 :Ce 3+ , (Ba 1-x-y Sr x Ca y )2Si5N8:Eu 2+ , (Ca 1-x-Sr Ba ). 2+4N7:Eu , (Ba1-x-ySrxCay)SiN2:Eu (0 ^ x ^ 1; 0 ^ y^ 1), (Ba1-x-ySrxCay)SiN2:Ce3+ (0 ^ x ^ 1; 0 ^ y ^ 1), (Sr1-Ca )LiAl3N4:Eu2+ (0 ^ x ^ 1 2+xx ), (Ba1-x-ySrxCay)Mg2Al2N4:Eu (0^x^1; 0^y^1), (Ba1-x-ySrxCay)Mg3SiN4:Eu2+ (0^x^1; 0^y^1). According to at least one embodiment, the conversion element consists of the phosphor described here. For example, the phosphor is formed as a ceramic. For example, the conversion element only partially converts the electromagnetic radiation of the semiconductor chip into electromagnetic radiation of the emission spectrum, while another part of the electromagnetic radiation of the semiconductor chip is transmitted by the conversion element. In this case, the optoelectronic component preferably emits mixed light. 2023PF01062 February 12, 2025P2023,1280 WO N- 21 -that is composed of electromagnetic radiation of the first wavelength range and electromagnetic radiation of the emission spectrum. For example, the electromagnetic component emits white light. The optoelectronic component is particularly suitable for use in white-light LEDs in backlights for screens. Furthermore, these optoelectronic components are used as white-light LEDs with higher color rendering indices, for human-centric lighting, or for use at higher irradiances due to lower flux quenching. According to at least one embodiment, the conversion element comprises at least one further phosphor that converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of a further wavelength range. This means that, for example, the further phosphor is also embedded in the same conversion element as the first phosphor.Alternatively, the further phosphor can also be arranged in a further conversion element located on the conversion element. The further phosphor preferably converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of the third wavelength range, which differs from the emission spectrum. In particular, the further phosphor emits yellow and / or red light. The phosphor can be produced using the method described below. Features and embodiments that are only described in conjunction with the phosphor and the 2023PF01062 February 12, 2025P2023,1280 WO N. - 22 - optoelectronic component can also be formed in the method and vice versa. According to one embodiment of the method for producing a phosphor with the general formula EA 4-x-a-d SE x+a M 1-b-c Si 19-y-x-3c Al y+x+3c N 29-y+a-3b-2d O y-a+3b+2d:A, where - EA is selected from Ca, Sr, Ba, Zn or combinations thereof, - SE is selected from the group of trivalent rare earth elements or combinations thereof, - M is selected from Sc, Y, Lu, Tm, Er, Ho or combinations thereof, - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Er or combinations thereof, - 0 ≤ d ≤ 1; - 0 ≤ x+a+d ≤ 4; - 0 ≤ b+c < 1; - 0 ≤ y+x+3c ≤ 19; - 0 ≤ y-a+3b+2d ≤ 10; - 2*(4-xad) + 3*(x+a) + 3*(1-bc)+ 4*(19-yx-3c) +3*(y+x+3c)-3*(2b-y+a-3b-2d)-2*(y-a+3b+2d) = 0. The process comprises the steps of providing a stoichiometric composition of reactants, homogenizing the reactants to produce a reaction mixture, and heating the reaction mixture to a temperature between 1500°C and 2000°C inclusive. According to at least one embodiment of the process, a stoichiometric composition of the reactants is homogenized in a first step of the process. This can be done by 2023PF01062 12.February 2025P2023,1280 WO N. - 23 -for example, in a hand mortar, a mortar mill, a ball mill, a multi-axis mixer, or the like. According to one embodiment of the process, the resulting reaction mixture of the reactants is transferred into a crucible. The crucible can, for example, comprise corundum, tungsten, molybdenum, or tantalum. According to at least one embodiment, the reaction mixture is heated in a further step to a temperature between 1500°C and 2000°C, preferably between 1650°C and 1850°C. The temperature is maintained for 1 hour and up to 20 hours. The heating takes place under a nitrogen atmosphere or a reducing atmosphere, for example, forming gas, at normal or elevated pressure. The forming gas atmosphere comprises, for example, a mixture of nitrogen or argon with up to 10% hydrogen, or is formed from such a mixture.After the reaction and cooling, the product is ground in a hand mortar. This can be done, for example, in a hand mortar, a mortar mill, or a ball mill. The reaction mixture is preferably heated under an N2 atmosphere at 20 bar and at a temperature of 1750°C for four hours. More preferably, the reaction mixture is heated under an N2 atmosphere at atmospheric pressure and at a temperature of 1650°C for four hours. Subsequently, in particular, the reaction mixture is cooled and ground in a hand mortar. According to at least one embodiment, the reactants are selected from the following group: yttrium compound, 2023PF01062 February 12, 2025P2023,1280 WO N. - 24 -Strontium compound, silicon compound, cerium compound, aluminum compound, and combinations thereof. According to at least one embodiment, the reactants are selected from the following group: yttrium nitride, yttrium oxide, strontium nitride, strontium subnitride, strontium carbonate, strontium oxide, silicon nitride, silicon oxide, aluminum nitride, aluminum oxide, cerium oxide, cerium nitride, cerium fluoride, and combinations thereof. According to at least one embodiment, the reaction mixture is heated at atmospheric pressure. One idea of ​​the present phosphor is to reduce the proportion of yttrium to the proportion of the framework former, for example, silicon, to 1:19. This advantageously reduces the presence of a rare, expensive element in the phosphor. In other words, the rare earth content per mass of phosphor is reduced to 8 percent. Furthermore, the phosphor is particularly suitable for high irradiances, since only minimal quenching effects occur.The phosphor described here is highly suitable for the blue-green to green spectral range and contributes to more efficient and / or simpler, and thus more cost-effective, solutions for applications. The phosphor described here emits blue-green to green light and can be used at high irradiances. It is therefore particularly well-suited for use in an optoelectronic component in the backlighting of display screens. The narrow half-width and high CIE y-value simultaneously achieve better color saturation and a wider color space coverage than with 2023PF01062 February 12, 2025P2023,1280 WO N. - 25 -commercially available green-emitting garnet phosphors. Furthermore, it offers the possibility of use in a 2-phosphor conversion solution in order to achieve high CRI (Color Rendering Index) with simultaneously high R9 values. Further advantageous embodiments and developments of the phosphor of the optoelectronic component and of the method emerge from the following embodiments described in conjunction with the figures.They show: Figure 1 a schematic section of a first layer of a crystal structure of a host lattice of a phosphor according to an embodiment, Figure 2 a four-unit as a structural feature of a second layer of a crystal structure of a host lattice of a phosphor according to an embodiment, Figure 3 a schematic section of a second layer of a crystal structure of a host lattice of a phosphor with a four-unit and a second six-ring as structural features according to an embodiment, Figure 4 the linkage of the first layer and the second layer to form a framework structure of a phosphor according to an embodiment, 2023PF01062 February 12, 2025 P2023,1280 WO N. - 26 -Figure 5 shows a schematic section of a first layer of a crystal structure of a host lattice of a phosphor according to an embodiment, Figure 6 shows a schematic section of a second layer of a crystal structure of a host lattice of a phosphor according to an embodiment, Figure 7 shows emission spectra of a phosphor according to an embodiment, Figure 8 shows emission spectra of a phosphor according to an embodiment and two comparative examples, Figures 9, 10 and 11 each show a schematic sectional view of an optoelectronic component according to a respective embodiment, Figures 12 and 13 each show simulated LED emission spectra with the phosphor according to a respective embodiment and a comparative example, and Figure 14 shows a schematic sectional view of various process stages of a process for producing a phosphor according to an embodiment.Identical, similar, or functionally equivalent elements are provided with the same reference numerals in the figures. The figures and the relative sizes of the elements shown in the figures are not to be considered to scale. Rather, individual elements, particularly layer thicknesses, may be exaggerated for clarity and / or better understanding. 2023PF01062 February 12, 2025P2023,1280 WO N. - 27 - The phosphor 1 according to one embodiment is in the form of particles. For example, the particles have a grain size between 0.2 micrometers and 100 micrometers (not explicitly shown). The phosphor 1 according to the embodiment of Figure 1 obeys the formula EA 4-x-a-d SE x+a M 1-b-c Si 19-y-x-3c Al y+x+3c N 29-y+a-3b-2d O y- a+3b+2d:A In particular, the phosphor 1 obeys the molecular formula Sr 4-m-o Y 1-n-p Si19-t+2m+3nAl t-2m-3n N29-t-2o-3p A t+2o+3p :What 3+The host lattice comprises a structure with a trigonal space group. The phosphor 1 crystallizes in the trigonal space group P3. The crystal structure of the host lattice of the phosphor 1 comprises corner-sharing (Si,Al)(N,O)4 tetrahedra 2. The crystal structure has a first layer 4, and the first layer 4 has (Si,Al)(N,O)4 tetrahedra 2. The first layer has triple rings 20. The triple rings 20 have three corner-sharing (Si,Al)(N,O)4 tetrahedra 2. In other words, three corner-sharing (Si,Al)(N,O)4 tetrahedra 2 form a triple ring 20. Three triple rings 20 are corner-sharing to form a nine-unit 23 with a first six-ring 17 at the center. In other words, the first six-membered ring 17 is formed by two (Si,Al)(N,O)4 tetrahedra 2 of each of the three three-membered rings 20. In the center of the first six-membered ring 17 is a channel 21. The channel 21 is preferably free of tetrahedra and / or ions.For example, channel 21 is a tetrahedral defect. The first layer 4 has a plurality of nine-units 23 and thus of first six-rings 17. The plurality of nine-units 23 are each connected to one another via common corners 32023PF01062 February 12, 2025P2023,1280 WO N. - 28 -linked. In each case, three corners of the nine-unit 23 are linked to corners of three further nine-units 23. Figure 2 shows a section of a crystal structure of a host lattice of a phosphor 1 according to an exemplary embodiment. Figure 2 shows a part of the second layer 5 of the crystal structure. The second layer 5 has, among other things, a four-unit 22 consisting of four corner-sharing (Si,Al)(N,O)4 tetrahedra 2. The four corner-sharing (Si,Al)(N,O)4 tetrahedra 2 exhibit disorder with regard to the N,O positions. The two right-hand figures in Figure 2 show two-ordered variants that differ only in the precise orientation of the disordered N,O positions. Within the four-unit 22, a (Si,Al)(N,O)4 tetrahedron 2 is located at the center. This is corner-linked to three other (Si,Al)(N,O)4 tetrahedra 2.Figure 3 shows the second layer 5 of the crystal structure of the phosphor 1 according to an exemplary embodiment. In addition to the four-unit 22, the second layer 5 has six corner-sharing (Si,Al)(N,O)4 tetrahedra 2, which form a second six-ring 18. The second six-ring 18 is linked to the four-unit 22. Each four-unit 22 is linked via common corners to three second six-rings 18. A second six-ring 18 is in turn linked to three four-unit 22. This creates nine-rings 19, which are formed by three times two (Si,Al)(N,O)4 tetrahedra 2 of the second six-rings 18 and one (Si,Al)(N,O)4 tetrahedron 2 each of the three four-unit 22. Thus, the second layer has 5 second six-rings 18 and nine-rings 19.2023PF01062 February 12, 2025P2023,1280 WO N. - 29 -Figure 4 shows a portion of the first layer 4 and the second layer 5 of the crystal structure of the phosphor 1 according to an embodiment. The first layer 4 and the second layer 5 form a framework structure 6. The first layer 4 and the second layer 5 are connected to one another via common (Si,Al)(N,O)4 tetrahedral vertices to form a framework structure. A total of two layers are located one above the other per unit cell along the crystallographic c-axis: a first layer 4 and a second layer 5. Figure 5 shows the first layer 4 of the crystal structure of the phosphor 1 according to an embodiment. The first layer 4 has first gaps 71, and EA ions or SE ions 8 are embedded in the first gaps 71 of the first layer 4. The first gaps 71 are located in the center of three corner-sharing nine-units 23.For example, three EA ions 8, preferably strontium ions, are embedded in each first gap 71 of the first layer 4. The first layer 4 contains exclusively EA ions or SE ions 8, preferably strontium ions. The channels 21 in the center of the first six-rings 17 in the first layer 4 are free of ions and (Si,Al)(N,O)4 tetrahedra 2. Figure 6 shows a section of the second layer 5 of the crystal structure of the phosphor 1 according to an embodiment. The second layer 5 has second gaps 72 and third gaps 73. EA ions or SE ions 8 are embedded in the second gaps 72, and M ions 9 are embedded in the third gaps 73. Preferably, strontium ions are present in the second gaps 72 of the second layer 52023PF01062 February 12, 2025P2023,1280 WO N. - 30 -embedded. The second gaps 72 are located in the middle of the nine-rings 19. The third gaps 73 are located in the middle of the second six-rings 18. The strontium ions are located in the second gaps 72 of the nine-rings 19. The M ions 9, preferably Y ions, are embedded in the third gaps 73 of the second six-rings 18. In the second gaps 72 of the nine-rings 19, there is preferably an EA ion 8, in this case the strontrium ion, and in the third gaps 73 of the second six-rings 18, there is preferably an M ion 9, in this case the Y ion. The activator ion A occupies the same positions, statistically distributed, as the EA, SE, or M ions, preferably Y and strontium ions, and can be located in the first layer 4 and the second layer 5. The structure of Sr 4-m-o Y 1-n-p Si19-t+2m+3nAl t-2m-3n N 29-t-2o-3p O t+2o+3p :Ce 3+was determined from a single crystal using single-crystal X-ray diffraction. The lattice parameters, crystallographic data, and the basic quality parameters of the X-ray determination are summarized in Table 1. For the structure determination, only Si layers were used for the tetrahedral centers, and N layers for the corners of the tetrahedra, since the Si and Al ions, or N and O ions, have approximately the same electron density and are therefore indistinguishable in a single-crystal X-ray structure analysis. EDX analyses indicate the incorporation of small amounts of Al and O. In principle, however, all Si layers could have a mixed Si / Al occupancy. In the N layers, all terminal or doubly bridging layers could have a mixed N,O occupancy or a pure O occupancy. These layers are labeled in Table 2 with [1] or [2] marked.2023PF01062 12 February 2025P2023,1280 WO N - 31 -All other N-layers are triple-bridging layers. These are [3] Furthermore, a mixed occupation of the Sr layers with other divalent or trivalent cations is conceivable, depending on the composition. Table 1: Crystallographic data of Sr 4-m-o Y 1-n-p Si19-t+2m+3nAl t-2m-3n N 29-t-2o-3p O t+2o+3p :Ce 3+ . Molecular formula Sr3.87Y0.13(Si,Al)19(N,O)29Crystal system trigonalSpace group P3 (No. 143)a / Å 12.1185(4)c / Å 4.8697(3)Cell volume / Å 3 619.34(6) T / K 296(2) Radiation Cu-Kα (λ = 1.542 Å)Measurement range 4.2 < θ < 72.3−14 ≤ h ≤ 14−14 ≤ k ≤ 14−6 ≤ l ≤ 6Number of total reflections 1637Independent reflections 1360Number of parameters 1214.506 / −3.3190.1039 / 0.12280.2474 / 0.2577 1.089 For the phosphor 1 with the molecular formula Sr 4-m-o Y 1-n-p Si 19- t+2m+3n Al t-2m-3n N 29-t-2o-3p O t+2o+3p :Ce 3+Crystallographic position parameters are also known, which are shown in Table 2. Table 2: Crystallographic position parameters of Sr4-m-oY1-n-pSi19-t+2m+3nAlt-2m-3nN29-t-2o-3pOt+2o+3p:Ce 3+ . N ame Atom- Wyckoff-X yz Occupation-U iso type location *U ani 2023PF01062 12 February 2025P2023,1280 WO N - 32 -Sr01 Sr 3d 0.5546(3) 0.4457(3) 0.7166(9) 1 0.0208(8)*Sr02 Sr 1a 1 1 0.25(2) 0.87 0.46(5)*Y01 Y 1b 1 / 3 2 / 3 0.201(12) 0.13 0.016(14)*Si01 Si 3d 0.3316(10) 0.410(1) 0.213(17) 1 0.012(2)*Si02 Si 3d 0.5898(11) 0.6681(10) 0.2127(18) 1 0.013(2)*Si03 Si 3d 09976(10) 0.7557(10) 0.723(2) 1 0.018(2)*Si04 Si 3d 0.7589(11) 0.7557(10) 0.724(2) 1 0.018(2)*Si05 Si 1c 2 / 3 1 / 3 0.213(4) 1 0.020(4)*Si06 Si 3d 0.8183(12) 0.6380(11) 0.213(3) 1 0.025(3)*Si07 Si 3d 0.5075(11) 0.7536(11) 0.715(2) 1 0.022(3)*N01 N[3] 1b 1 / 3 2 / 3 0.761(16) 1 0.042(18)N02 N[2] 3d 0.478(3) 0.520(3) 0.177(7) 1 0.022(7)N03 N[2] 3d 0.840(3) 0.919(4) 0.713(8) 1 0.026(8)N04 N[3] 3d 0.861(4) 0.722(4) 0.559(10) 1 0.042(10)N05A N[2] 3d 0.743(5) 0.482(5) 0.355(11) 0.5 0.005(10)N05B N[2] 3d 0.743(5) 0.487(5) 0.08(1) 0.5 0.002(9)N06 N[3] 3d 0.554(5) 0.775(5) 0.104(10) 1 0.045(10)N07 N[3] 3d 0.728(5) 0.686(5) 0.068(10) 1 0.049(11)N08 N[3] 3d 0.959(4) 0.689(4) 0.068(9) 1 0.04(1)N09 N[3] 3d 0.605(6) 0.685(6) 0.588(13) 1 0.076(17)N10 N[3] 3d 1,080(7) 0.689(7) 0.591(15) 1 0.09(2)N11A N[1] 1c 2 / 3 1 / 3 -0.14(2) 0.5 0.007(17)N12A N[1] 1c 2 / 3 1 / 3 0.53(2) 0.5 0.02(2)Figure 7 shows two emission spectra E1 and E2 of a phosphor 1 according to an exemplary embodiment upon excitation with electromagnetic radiation of an excitation spectrum in the UV or blue wavelength range. The phosphor 1 was excited at a wavelength of 405 nm and 440 nm. The emission spectrum is the spectral intensity I of the electromagnetic radiation emitted by the phosphor 1 as a function of the wavelength λ. The emission spectrum is in a wavelength range from 450 to2023PF01062 12 February 2025P2023,1280 WO N, - 33 -including 700 nanometers. The emission spectrum E1 exhibits a dominant wavelength λDom of 499 nanometers at an excitation wavelength of 405 nanometers. The spectral full width at half maximum (FWHM) is 57 nanometers. The emission spectrum is cut off on the short-wavelength side by a filter due to the measurement setup. As a result, the spectral full width at half maximum could be larger in reality. The emission maximum λmax is 479 nanometers. The emission spectrum E2 exhibits a dominant wavelength λ at an excitation wavelength of 440 nanometers. Dom of 540 nanometers. A spectral half-width is 90 nanometers and an emission maximum λ max is 524 nanometers. An emission spectrum exhibits a dominant wavelength λ at an excitation wavelength of 448 nanometers. Dom of 555 nanometers. A spectral half-width is 89 nanometers and an emission maximum λ maxis 530 nanometers. The spectral data mentioned are summarized in Tables 3 and 4. A shift in the emission curve depending on the excitation wavelength is clearly visible. Table 3: Spectral data for Sr4-m-oY1-n-pSi19-t+2m+3nAlt-2m-3nN29-t-2o-3pOt+2o+3p:Ce 3+ . Excitation at excitation at 405 nm 440 nm Dominant wavelength 499 nm 540 nm λ dom Emission maximum λmax 479 nm 524 nm Half width FWHM 57 nm (cut-off) 90 nm Figure 8 shows the emission spectrum E-VB1 of the comparative example YAGaG:Ce and the emission spectrum E-VB2 of the comparative example ß-SiAlON:Eu as well as the2023PF01062 12 February 2025P2023,1280 WO N - 34 - Emission spectrum E3 of the embodiment of the phosphor 1 with the molecular formula Sr4-m-oY1-n-pSi19-t+2m+3nAlt-2m- 3n N 29-t-2o-3p O t+2o+3p :Ce 3+in a wavelength range from 400 nanometers up to and including 900 nanometers. The excitation wavelength is 448 nanometers. The emission spectrum E3 of phosphor 1 is shown as a solid line. The emission spectrum E-VB1 of the reference phosphor YAGaG:Ce is shown as a dotted line, and the emission spectrum E-VB2 of the reference phosphor ß-SiAlON:Eu is shown as a dashed line. The spectral data are summarized in Table 4. Table 4: Spectral data for Sr4-m-oY1-n-pSi19-t+2m+3nAlt-2m-3nN29-t-2o-3pOt+2o+3p:Ce 3+ , Working example 2, Comparative example 1 (YAGaG:Ce) and Comparative example 2 (ß-SiAlON:Eu) with excitation at 448 nm. Sr 4-m-o Y 1-n-p Si 19- YAGaG:Ce ß- t +2m+3n Al t-2m-3n N 29-t-2o- Excitation SiAlON:Eu 3 p O t+2o+3p :Ce 3+ , upon excitation Excitation at 448 nm 448 nm at 448 nm Dominant wavelength 555 nm 559 nm 552 nm λ domEmission maximum530 nm 526 nm 534 nmλ max Half-width 89 nm 116 nm 55 nm FWHM CIE-x 0.337 0.360 0.316 CIE-y 0.569 0.558 0.648 Figure 9 shows a schematic sectional view of an optoelectronic component 10 according to an embodiment, which has a semiconductor chip 11 which, during operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface 12. The semiconductor chip 11 comprises an active layer sequence and an active region (not explicitly shown here). - 35 -shown) which serves to generate the primary radiation. The primary radiation is electromagnetic radiation of a first wavelength range. Preferably, it is electromagnetic radiation with wavelengths in the visible range, for example, in the blue spectral range. A conversion element 13 is arranged in the beam path of the electromagnetic radiation emitted by the semiconductor chip 11 in the first wavelength range. The conversion element 13 is configured to absorb the electromagnetic radiation of the first wavelength range and to convert it at least partially into electromagnetic radiation of the emission spectrum. In particular, the emission spectrum has a longer wavelength than the absorbed first wavelength range. The conversion element 13 comprises a phosphor 1 with the general formula EA 4-x-a-d SE x+a M 1-b-c Si 19-y-x-3c Al y+x+3c N 29-y+a-3b-2d O y-a+3b+2d:A. In particular, the conversion element 13 can contain the phosphor 1 with the formula Sr 4-m-o Y 1-n-p Si19-t+2m+3nAl t-2m-3n N 29-t-2o- 3p O t+2o+3p :Ce 3+ The phosphor 1 can be embedded in a matrix material. The matrix material is, for example, a silicone, a polysiloxane, an epoxy resin, or a glass. Alternatively, the conversion element 13 can be free of a matrix material. In this case, the conversion element 13 can consist of the phosphor 1, for example, a ceramic of the phosphor 1. 2023PF01062 February 12, 2025P2023,1280 WO N - 36 -Alternatively, the conversion element 13 can comprise at least one further phosphor 1. The further phosphor 1 converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of a further wavelength range. The further phosphor can, for example, convert the electromagnetic radiation of the first wavelength range into electromagnetic radiation of the yellow and / or red wavelength range. The further phosphor can, for example, be (Sr,Ca)AlSiN3:Eu and / or YAGaG:Ce. Other phosphors or combinations of phosphors are conceivable. The semiconductor chip 11 and the conversion element 13 are embedded in a recess 15 of a housing 14. For better stabilization and protection of the semiconductor chip 11 and the conversion element 13, the recess 15 of the housing 14 can be filled with a potting compound 16, and the semiconductor chip 11 and the conversion element 13 are completely encased in the potting compound 16.The conversion element 13 can be arranged in direct mechanical contact on the semiconductor chip 11, as shown in Figure 9. In particular, the radiation exit surface 12 forms the common surface between the conversion element 13 and the semiconductor chip 11. Alternatively, further layers, such as adhesive layers, can be located between the semiconductor chip 11 and the conversion element 13. According to the exemplary embodiment shown in Figure 10, the conversion element 13 is arranged at a distance from the semiconductor chip 11. In this case, a potting compound 16 can be arranged between the semiconductor chip 11 and the conversion element 2023PF01062 February 12, 2025P2023,1280 WO N. - 37 -13. Alternatively, the recess 15 between the semiconductor chip 11 and the conversion element 13 can also be free of a potting 16 or further layers or components. According to the exemplary embodiment shown in Figure 11, the conversion element 13 is arranged in a recess 15. The semiconductor chip 11 is embedded in the conversion element 13. The conversion element 13 comprises the phosphor 1 and the matrix material, which is, for example, silicone. Further phosphors can be introduced into the conversion element 13. Figures 12 and 13 each show simulated LED emission spectra of phosphor solutions. The phosphor solution of the emission spectrum SE1 comprises the phosphor 1, in this case Sr 4-m-o Y 1-n-p Si19-t+2m+3nAl t-2m-3n N 29-t-2o- O :Ce3+3p t+2o+3p , and the additional red phosphor (Sr,Ca)AlSiN3:Eu. The simulated LED spectrum SE2 features the phosphor solution composed of the reference phosphor YAGaG:Ce and the additional red phosphor (Sr,Ca)AlSiN3:Eu. The color temperature in Figure 12 is 4000 K, and the color temperature in Figure 13 is 5000 K. The relative intensity I is plotted against the wavelength λ in nanometers. Here, LED emission spectra were simulated for the phosphor solutions composed of phosphor 1 and the red phosphor (Sr,Ca)AlSiN3:Eu, as well as for the reference phosphor solution composed of YAGaG:Ce and the red phosphor (Sr,Ca)AlSiN3:Eu. The dominant wavelength of the blue-emitting semiconductor chip 11 was 458 nanometers. Using the2023PF01062 12 February 2025P2023,1280 WO N - 38 -With phosphor solution 1, a CRI of 90 and an R9 value of approximately 50 are achieved, as required for applications in the retail sector, for example. The R9 value describes the saturation of red tones. The higher this value, the more saturated a red tone appears to the viewer. The comparison LED spectrum SE2 achieves CRI values ​​of less than 90 and R9 values ​​of less than 30 and therefore cannot be used in the retail sector, where particularly natural color rendering is required. Table 5 shows the optical data of the simulated LED emission spectra of the phosphor solution containing the phosphor 1 Sr. 4-m-o Y 1-n-p Si19-t+2m+3nAl t-2m-3n N 29-t-2o-3p O t+2o+3p :Ce 3+according to the exemplary embodiment and the red phosphor (Sr,Ca)AlSiN3:Eu, as well as a comparative example phosphor solution made of the comparative phosphor YAGaG:Ce and the red phosphor (Sr,Ca)AlSiN3:Eu. The blue-emitting semiconductor chip 11 has a dominant wavelength of 458 nanometers. Table 5: Comparison of solutions for white light generation with CRI > 90 using the phosphor according to the invention as the green component and CRI < 90 using a commercially available YAGaG:Ce as the green component. Phosphor solution Phosphor solution 1: Comparative example Sr4-m-oY1-n-pSi19-t+2m+3nAlt- 1: 2 m-3n N 29-t-2o-3p O t+2o+3p :Ce 3+YAGaG:Ce + (Sr,Ca)AlSiN:Eu + (Sr,Ca)AlSiN:Eu Color temperature CCT 4000 K 5000 K 4000 K 5000 K Color rendering CRI 90 90 86 87 R9 46 54 22 27 In the method according to the embodiment of Figure 14, a stoichiometric composition of reactants is provided in a first method step S1. The reactants can be an yttrium source, for example yttrium nitride, yttrium oxide; a strontium source, for example 2023PF01062 February 12, 2025 P2023,1280 WO N - 39 -For example, stontium nitride, strontium subnitride, strontium oxide, or strontium carbonate; a silicon source, for example, silicon nitride or silicon oxide; an aluminum source, for example, aluminum nitride or aluminum oxide; and an activator, for example, cerium in the form of cerium oxide, cerium nitride, or cerium fluoride. The reactants are weighed and thoroughly mixed under a protective gas atmosphere. This can be done in a hand mortar, a mortar mill, a ball mill, a multi-axis mixer, or similar. In a next step S2, the reaction mixture is heated to a temperature between 1500 °C and 2000 °C inclusive. Before heating, the mixed reactants are transferred to a crucible for homogenization. This crucible can be made of corundum, tungsten, molybdenum, or tantalum, for example. The maximum synthesis temperature is maintained for 1 to 20 hours.Annealing takes place under a nitrogen or reducing atmosphere, for example, forming gas, at normal or elevated pressure. For example, the reactants are reacted under an N2 atmosphere at 20 bar and 1750 °C or under an N2 atmosphere at normal pressure and 1650 °C for 4 hours. In the next step (S3), the reaction mixture is cooled and ground in a hand mortar. This can be done, for example, in a hand mortar, a mortar grinder, or a ball mill. Table 6 summarizes the initial weight of the reactants required for the production of a phosphor 1 with the molecular formula Sr. 4-m-o Y 1-n-p Si19-t+2m+3nAl t-2m- 3n N 29-t-2o-3p O t+2o+3p :Ce 3+ were used according to an embodiment.2023PF01062 February 12, 2025P2023,1280 WO N - 40 - Table 6: Sample weight for the synthesis of Sr4-m-oY1-n-pSi19-t+2m+3nAlt-2m-3nN29-t-2o-3pOt+2o+3p:Ce 3+. Sr3N2 SrN2 IN SrCO3 AlN Si3N4 SiO2 CeO2Ausführungs- - 2,850 5,0238,491g 2,02111,530 - 0,085Example 1 and 2 Embodiment 2.756- 0.741 - 1.7703.365 1.297 0.071 Example 3 The features and embodiments described in conjunction with the figures can be combined with one another according to further embodiments, even if not all combinations are explicitly described. Furthermore, the embodiments described in conjunction with the figures can alternatively or additionally have further features in accordance with the description in the general part. The invention is not limited to the description based on the embodiments. Rather, the invention encompasses any new feature and any combination of features, which in particular includes any combination of features in the patent claims, even if this feature or this combination itself is not explicitly stated in the patent claims or embodiments.This patent application claims priority from German patent application 102024104050.5, the disclosure of which is hereby incorporated by reference.2023PF01062 February 12, 2025P2023,1280 WO N. - 41 - List of reference symbols1 phosphor2 (Si,Al)(N,O)4 tetrahedron 3 Ecke 4 first layer 5 second layer 6 framework 71 first gap 72 second gap 73 third gap 8 EA ions and / or RE ions 9 M-Ionen 10 optoelectronic component 11 semiconductor chip 12 radiation exit surface 13 conversion element 14 housing 15 recess 16 encapsulation 17 first six-ring 18 second six-ring 19 nine-ring 20 three-ring 21 Kanal 22 Four-unit23 Nine-unitI Intensityλ WavelengthE1 Emission spectrum Sr4-m-oY1-n-pSi19-t+2m+3nAlt-2m-3nN29-t-2o- 3p O t+2o+3p :Ce 3+ , Excitation 405 nmE2 Emission spectrum Sr4-m-oY1-n-pSi19-t+2m+3nAlt-2m-3nN29-t-2o- 3p O t+2o+3p :Ce 3+ , excitation 440 nmE3 emission spectrum Sr4-m-oY1-n-pSi19-t+2m+3nAlt-2m-3nN29-t-2o-3p O t+2o+3p :Ce 3+ , excitation 448 nm2023PF01062 12 February 2025P2023,1280 WO N - 42 - E-VB1 Emission spectrum comparison example YAGaG:Ce, excitation 448 nm E-VB2 Emission spectrum comparison example ß-SiAlON:Eu, excitation 448 nm SE1 simulated LED spectrum with phosphor 1 and (Sr,Ca)AlSiN3:Eu SE2 simulated LED spectrum with YAGaG:Ce and (Sr,Ca)AlSiN3:Eu S1 Process step 1 S2 Process step 2 S3 Process step 3

Claims

2023PF01062 12 February 2025P2023,1280 WO N - 43 - Claims 1. Phosphor (1) with the general formula EA 4-x-a-d SE x+a M 1-b-c Si 19-y-x-3c Al y+x+3c N 29-y+a-3b-2d O y-a+3b+2d:A, where - EA is selected from Ca, Sr, Ba, Zn or combinations thereof, - SE is selected from the group of trivalent rare earth elements or combinations thereof, - M is selected from Sc, Y, Lu, Tm, Er, Ho or combinations thereof, - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Er or combinations thereof, - 0 ≤ d ≤ 1; - 0 ≤ x+a+d ≤ 4; - 0 ≤ b+c < 1; - 0 ≤ y+x+3c ≤ 19; - 0 ≤ y-a+3b+2d ≤ 10; and- 2*(4-xad) + 3*(x+a) + 3*(1-bc) + 4*(19-yx-3c) + 3*(y+x+3c) - 3*(29-y+a-3b-2d) - 2*(y-a+3b+2d) = 0.

2. Phosphor (1) according to the preceding claim, wherein A comprises cerium.

3. Phosphor (1) according to one of the preceding claims, wherein EA comprises Sr.

4. Phosphor (1) according to one of the preceding claims, wherein M comprises yttrium.

5. Phosphor (1) according to one of the preceding claims, wherein the phosphor (1) has the formula Sr4-m-oY1-n-pSi19-t+2m+3nAlT-2m-3nN29-t-2o-3pOt+2o+3p:Ce 3+ where2023PF01062 12 February 2025P2023,1280 WO N - 44 - - 0 ≤ t ≤ 19; - t ≥ 2m;- t ≥ 3n;- 0 ≤ m ≤ 3; - 0 ≤ o ≤ 3; - 0 ≤ n ≤ 1; - 0 ≤ p ≤ 1; - 0 ≤ m + o < 4; - 0 ≤ n + p < 1; - 0 ≤ t + 2o + 3p ≤ 10; and - 2*(4-mo) + 3*(1-np) + 4*(19-t+2m+3n) + 3*(t-2m-3n)-3*(29-t-2o-3p)-2*(t+2o+3p)=0.

6. The phosphor (1) according to one of the preceding claims, wherein the phosphor (1) has a host lattice comprising a structure with a trigonal space group.

7. The phosphor (1) according to one of the preceding claims, wherein the phosphor (1) crystallizes in the trigonal space group P3.

8. The phosphor (1) according to one of the preceding claims, wherein a crystal structure of the host lattice of the phosphor (1) comprises corner-sharing (Si,Al)(N,O)4 tetrahedra (2).

9. The phosphor (1) according to one of the preceding claims, wherein the crystal structure of the host lattice of the phosphor (1) has a first layer (4) and a second layer (5), and wherein the first layer (4) and the second layer (5) comprise (Si,Al)(N,O)4 tetrahedra (2). 10.Phosphor (1) according to one of the preceding claims,2023PF01062 February 12, 2025P2023,1280 WO N. - 45 - wherein the first layer (4) comprises three-membered rings (20), and the three-membered rings (20) comprise three corner-sharing (Si,Al)(N,O)4 tetrahedra (2).

11. The phosphor (1) according to one of the preceding claims, wherein a framework structure (6) is constructed from alternating first (4) and second layers (5).

12. The phosphor (1) according to one of the preceding claims, wherein the first layer (4) comprises first gaps (71), the second layer (5) comprises second gaps (72) and third gaps (73), and EA ions and / or SE ions (8) are embedded in the first gaps (71), EA ions and / or SE ions (8) are embedded in the second gaps (72), and M ions (9) are embedded in the third gaps (73). Phosphor (1) according to one of the preceding claims, in which a dominant wavelength (λ Dom) of the electromagnetic radiation emitted by the phosphor (1) at an excitation wavelength of 440 nm or 448 nm is between 520 nanometers and 575 nanometers inclusive.

14. Phosphor (1) according to one of the preceding claims, in which a dominant wavelength (λ Dom ) of the electromagnetic radiation emitted by the phosphor (1) at an excitation wavelength of 405 nm is between 479 nanometers and 519 nanometers inclusive.

15. The phosphor (1) according to any one of the preceding claims, wherein a half-width of the electromagnetic radiation emitted by the phosphor (1) is between 2023PF01062 12 February 2025P2023,1280 WO N - 46 -including 50 nanometers and including 125 nanometers.

16. Optoelectronic component (10) comprising: - a semiconductor chip (11) which, during operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface (12), and - a conversion element (13) comprising a phosphor (1) according to claim 1, which converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of the emission spectrum.

17. Optoelectronic component (10) according to the preceding claim, wherein the conversion element (13) comprises at least one further phosphor which converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of a further wavelength range.

18. Method for producing a phosphor (1) having the general formula EA 4-x-a-d SE x+a M 1-b-c Si 19-y-x-3c Al y+x+3c N 29-y+a-3b-2d O y- a+3b+2d:A, where - EA is selected from Ca, Sr, Ba, Zn or combinations thereof, - SE is selected from the group of trivalent rare earth elements or combinations thereof, - M is selected from Sc, Y, Lu, Tm, Er, Ho or combinations thereof, - A is selected from Ce, Eu, Mn, Bi, Tb, Dy, Ni, Cr, Er or combinations thereof, - 0 ≤ d ≤ 1; - 0 ≤ x+a+d ≤ 4; 2023PF01062 February 12, 2025P2023,1280 WO N - 47 -- 0 ≤ b+c < 1;- 0 ≤ y+x+3c ≤ 19;- 0 ≤ y-a+3b+2d ≤ 10;- 2*(4-xad) + 3*(x+a) + 3*(1-bc)+ 4*(19-yx-3c) +3*(y+x+3c)-3*(29-y+a-3b-2d)-2*(y-a+3b+2d) = 0, comprising the steps of - providing a stoichiometric composition of reactants, - homogenizing the reactants to produce a reaction mixture, and - heating the reaction mixture to a temperature between 1500 °C and 2000 °C inclusive.

19. A process for producing a phosphor (1) according to the preceding claim, wherein the reactants are selected from the following group: yttrium nitride, yttrium oxide, strontium nitride, strontium subnitride, strontium carbonate, strontium oxide, silicon nitride, silicon oxide, aluminum nitride, aluminum oxide, cerium oxide, cerium nitride, cerium fluoride and combinations thereof.

Images