Substrate processing system

Abstract

Provided is a technique for suppressing the effect of temperature on a sensing device provided to an end effector. A substrate processing system comprises: a substrate processing chamber; a transport chamber; a transport robot configured to transport a substrate between the substrate processing chamber and the transport chamber; and a control unit. The transfer robot comprises an end effector configured to hold the substrate. The end effector comprises: a displacement sensor configured to acquire a distance to an object in the substrate processing chamber; a temperature sensor configured to output the temperature of the displacement sensor; and a temperature regulation device. The control unit is configured to control the temperature regulation device so that the output of the temperature sensor is within a reference range while the displacement sensor is acquiring the distance.

Description

Substrate Processing System

[0001] SUMMARY OF THE INVENTION An exemplary embodiment of the present disclosure relates to a substrate processing system.

[0002] Japanese Patent Application Laid-Open No. 2003-144999 discloses a technique for estimating the height of an annular member placed on a mounting table of a substrate processing apparatus using a distance sensor provided in a substrate holding unit of a substrate transport mechanism.

[0003] Japanese Patent Application Laid-Open No. 2022-174626

[0004] The present disclosure provides a technique for suppressing the effects of temperature on a sensing device provided in an end effector.

[0005] In one exemplary embodiment of the present disclosure, there is provided a substrate processing system comprising: a substrate processing chamber; a transfer chamber; a transfer robot configured to transfer a substrate between the substrate processing chamber and the transfer chamber, the transfer robot having an end effector configured to hold the substrate, the end effector having a displacement sensor configured to acquire a distance to an object in the substrate processing chamber, a temperature sensor configured to output a temperature of the displacement sensor, and a temperature adjustment device; and a control unit configured to control the temperature adjustment device so that the output of the temperature sensor is within a reference range while the displacement sensor is acquiring the distance.

[0006] According to one exemplary embodiment of the present disclosure, a technique for suppressing the influence of temperature on a sensing device provided in an end effector can be provided.

[0007] FIG. 1 is a diagram for explaining an example of the configuration of a substrate processing system. FIG. 2 is a diagram for explaining an example of the configuration of a plasma processing system. FIG. 3 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus. FIG. 4 is a diagram for explaining an example of an end effector. FIG. 5 is a diagram for explaining an example of a sensing module. FIG. 6 is a diagram for explaining an example of measurement using an end effector. FIG. 7 is a diagram for explaining another example of a sensing module.

[0008] Hereinafter, each embodiment of the present disclosure will be described.

[0009] In one exemplary embodiment, a substrate processing system is provided, comprising: a substrate processing chamber; a transfer chamber; a transfer robot configured to transfer a substrate between the substrate processing chamber and the transfer chamber, the transfer robot having an end effector configured to hold the substrate, the end effector having a displacement sensor configured to acquire a distance to an object in the substrate processing chamber, a temperature sensor configured to output a temperature of the displacement sensor, and a temperature adjustment device; and a control unit configured to control the temperature adjustment device so that the output of the temperature sensor is within a reference range while the displacement sensor is acquiring the distance.

[0010] In one exemplary embodiment, a substrate processing chamber includes a substrate support disposed within the substrate processing chamber, the substrate support having a substrate support surface and a ring support surface, and an annular member disposed on the ring support surface to surround a substrate on the substrate support surface, wherein the displacement sensor is configured to measure a first distance between the displacement sensor and the annular member.

[0011] In one exemplary embodiment, the control unit is configured to control the temperature adjustment device so that the output of the temperature sensor is within a reference range while the displacement sensor is measuring the first distance.

[0012] In one exemplary embodiment, the control unit is configured to stop movement of the end effector during measurement of the first distance.

[0013] In one exemplary embodiment, the displacement sensor is configured to measure a second distance between the displacement sensor and the substrate support surface.

[0014] In one exemplary embodiment, the controller is configured to determine the amount of wear of the annular member based on the first distance and the second distance.

[0015] In one exemplary embodiment, the control unit is configured to control the temperature adjustment device so that the output of the temperature sensor is within a reference range while the displacement sensor is measuring the second distance.

[0016] In one exemplary embodiment, the control unit is configured to stop movement of the end effector while the displacement sensor measures the second distance.

[0017] In one exemplary embodiment, the displacement sensor is an optical displacement sensor.

[0018] In one exemplary embodiment, the temperature adjustment device includes a Peltier element.

[0019] In one exemplary embodiment, the temperature adjustment device is positioned in proximity to the displacement sensor.

[0020] In one exemplary embodiment, the temperature sensor is located in proximity to the displacement sensor.

[0021] In one exemplary embodiment, a substrate processing system is provided, comprising: a substrate processing chamber; a transfer chamber; a transfer robot configured to transfer a substrate between the substrate processing chamber and the transfer chamber, the transfer robot having an end effector configured to hold the substrate, the end effector having a sensing device configured to acquire information within the substrate processing chamber, a temperature sensor configured to output the temperature of the sensing device, and a temperature adjustment device; and a control unit configured to control the temperature adjustment device so that the output of the temperature sensor is within a reference range while the sensing device acquires information.

[0022] In one exemplary embodiment, the sensing device includes an imaging device.

[0023] In one exemplary embodiment, the sensing device includes an optical sensor.

[0024] In one exemplary embodiment, the control unit is configured to stop movement of the end effector while the sensing device acquires information.

[0025] In one exemplary embodiment, the temperature adjustment device includes a Peltier element.

[0026] In one exemplary embodiment, the temperature regulation device is positioned in proximity to the sensing device.

[0027] In one exemplary embodiment, the temperature sensor is located in proximity to the sensing device.

[0028] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are designated by the same reference numerals, and redundant explanations will be omitted. Unless otherwise specified, the positional relationships, such as up, down, left, and right, will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0029] 1 is a diagram illustrating an example of the configuration of a substrate processing system PS according to one embodiment. As shown in FIG. 1, the substrate processing system PS includes vacuum transfer modules TM1 and TM2, process modules PM1 to PM12, load lock modules LL1 and LL2, an atmospheric transfer module LM, an aligner AN, a storage SR, and the like.

[0030] Each of the vacuum transfer modules TM1 and TM2 has a substantially rectangular shape in a plan view. The vacuum transfer module TM1 has two opposing side surfaces to which the process modules PM1 to PM6 are connected. Of the other two opposing side surfaces of the vacuum transfer module TM1, one side surface is connected to the load lock modules LL1 and LL2, and the other side surface is connected to a path (not shown) for connection to the vacuum transfer module TM2. The side surface of the vacuum transfer module TM1 to which the load lock modules LL1 and LL2 are connected is angled in accordance with the two load lock modules LL1 and LL2. The vacuum transfer module TM2 has two opposing side surfaces to which the process modules PM7 to PM12 are connected. Of the other two opposing side surfaces of the vacuum transfer module TM2, one side surface is connected to a path (not shown) for connection to the vacuum transfer module TM1. The vacuum transfer modules TM1 and TM2 each have a vacuum chamber with a vacuum atmosphere, and vacuum transfer robots TR1 and TR2 are disposed inside the vacuum chamber. The vacuum chambers of the vacuum transfer modules TM1 and TM2 are an example of the "transfer chamber" of the present disclosure.

[0031] The vacuum transfer robots TR1 and TR2 are configured to be rotatable, extendable, and elevating. The vacuum transfer robots TR1 and TR2 transfer objects based on operational instructions output by a control unit CU (described later). For example, the vacuum transfer robot TR1 holds the object with end effectors EF11 and EF12 located at its tip and transfers it between the load lock modules LL1 and LL2, the process modules PM1 to PM6, and paths (not shown). For example, the vacuum transfer robot TR2 holds the object with end effectors EF21 and EF22 located at its tip and transfers it between the process modules PM7 to PM12 and paths (not shown). The vacuum transfer robots TR1 and TR2 are examples of "transfer robots" as defined herein. The end effectors EF11 and EF12 and the end effectors EF21 and EF22 are also examples of "end effectors" as defined herein. The end effector may also be called a fork or a pick.

[0032] The objects to be transferred include substrates and consumable parts. Substrates are, for example, semiconductor substrates and jig substrates for sensors. Consumable parts are parts that are replaceably installed in the process modules PM1 to PM12 and are consumed by various processes such as plasma processing performed in the process modules PM1 to PM12. Consumable parts include, for example, parts that constitute the ring assembly 112 and shower head 13, which will be described later.

[0033] Each of the process modules PM1 to PM12 has a processing chamber and a stage (mounting table) disposed therein. At least one of the process modules PM1 to PM12 may be a plasma processing system (see FIG. 2), which will be described later. For example, after a substrate is placed on the stage, at least one of the process modules PM1 to PM12 may reduce the pressure inside, introduce a processing gas, apply RF power to generate plasma, and perform plasma processing on the substrate using the plasma. The vacuum transfer modules TM1 and TM2 and the process modules PM1 to PM12 are separated by a gate valve G1 that can be opened and closed. The processing chambers of the process modules PM1 to PM12 are an example of the "substrate processing chamber" of this disclosure.

[0034] The load lock modules LL1 and LL2 are disposed between the vacuum transfer module TM1 and the atmospheric transfer module LM. The load lock modules LL1 and LL2 have internal pressure variable chambers whose interiors can be switched between vacuum and atmospheric pressure. The load lock modules LL1 and LL2 have stages disposed therein. When transferring a substrate from the atmospheric transfer module LM to the vacuum transfer module TM1, the load lock modules LL1 and LL2 maintain atmospheric pressure inside the modules to receive the substrate from the atmospheric transfer module LM, and then reduce the pressure inside the modules before transferring the substrate to the vacuum transfer module TM1. When transferring a substrate from the vacuum transfer module TM1 to the atmospheric transfer module LM, the load lock modules LL1 and LL2 maintain vacuum inside the modules to receive the substrate from the vacuum transfer module TM1, and then increase the pressure inside the modules to atmospheric pressure before transferring the substrate to the atmospheric transfer module LM. The load lock modules LL1 and LL2 and the vacuum transfer module TM1 are separated by a gate valve G2 that can be opened or closed. The load lock modules LL1 and LL2 and the atmospheric transfer module LM are separated by a gate valve G3 that can be opened and closed.

[0035] The atmospheric transfer module LM is disposed opposite the vacuum transfer module TM1. The atmospheric transfer module LM may be, for example, an Equipment Front End Module (EFEM). The atmospheric transfer module LM is a rectangular parallelepiped atmospheric transfer chamber equipped with an FFU (Fan Filter Unit) and maintained at atmospheric pressure. Two load lock modules LL1 and LL2 are connected to one longitudinal side of the atmospheric transfer module LM. Load ports LP1 to LP4 are connected to the other longitudinal side of the atmospheric transfer module LM. Containers C, each containing multiple substrates (e.g., 25 substrates), are placed on the load ports LP1 to LP4. The containers C may be, for example, FOUPs (Front-Opening Unified Pods). An atmospheric transfer robot TR3, which transfers the objects to be transferred, is disposed within the atmospheric transfer module LM.

[0036] The atmospheric transfer robot TR3 is configured to be movable along the longitudinal direction of the atmospheric transfer module LM, and is also configured to be freely swiveling, extending and retracting, and moving up and down. The atmospheric transfer robot TR3 transfers the transfer target object based on operation instructions output by the control unit CU, which will be described later. For example, the atmospheric transfer robot TR3 holds the transfer target object with an end effector EF31 located at its tip, and transfers the transfer target object between the load ports LP1 to LP4, the load lock modules LL1 and LL2, the aligner AN, and the storage SR.

[0037] The aligner AN is connected to one side surface of the atmospheric transfer module LM along the short side. However, the aligner AN may be connected to a side surface of the atmospheric transfer module LM along the long side. The aligner AN may also be provided inside the atmospheric transfer module LM. The aligner AN includes a support base, an optical sensor (neither of which are shown), and the like. The aligner here is a device that detects the position of the transfer target object.

[0038] The support table is a table that can rotate around an axis extending in the vertical direction and is configured to support a substrate thereon. The support table is rotated by a drive unit (not shown). The drive unit is controlled by a control unit CU, which will be described later. When the support table is rotated by the power from the drive unit, the substrate placed on the support table also rotates.

[0039] The optical sensor detects the edge of the substrate while it rotates. Based on the edge detection result, the optical sensor detects the amount of deviation of the angular position of the substrate's notch (or another marker) relative to a reference angular position and the amount of deviation of the substrate's center position relative to the reference position. The optical sensor outputs the amount of deviation of the notch's angular position and the amount of deviation of the substrate's center position to a control unit CU (described later). Based on the amount of deviation of the notch's angular position, the control unit CU calculates the amount of rotation of the rotary support table to correct the notch's angular position to the reference angular position. The control unit CU controls a drive unit (not shown) to rotate the rotary support table by this amount of rotation. This allows the notch's angular position to be corrected to the reference angular position. Furthermore, the control unit CU controls the position of the end effector EF31 of the atmospheric transfer robot TR3 when receiving the substrate from the aligner AN, based on the amount of deviation of the substrate's center position, so that the center position of the substrate coincides with a predetermined position on the end effector EF31 of the atmospheric transfer robot TR3.

[0040] The storage SR is connected to a side surface along the longitudinal direction of the atmospheric transfer module LM. However, the storage SR may be connected to a side surface along the lateral direction of the atmospheric transfer module LM. The storage SR may also be provided inside the atmospheric transfer module LM. The storage SR stores objects to be transferred.

[0041] The substrate processing system PS is connected to the control unit CU via a communication interface. In one embodiment, part or all of the control unit CU may be included in the substrate processing system PS. The control unit CU may be, for example, a computer. The control unit CU includes a central processing unit (CPU), random access memory (RAM), read-only memory (ROM), and an auxiliary storage device. The CPU operates based on a program stored in the ROM or the auxiliary storage device to control each component of the substrate processing system PS. For example, the control unit CU outputs operational instructions to the vacuum transfer robots TR1 and TR2, the atmospheric transfer robot TR3, and the like. The operational instructions include an instruction to align the end effectors EF11, EF12, EF21, EF22, and EF31 that transport the object with the transfer location of the object.

[0042] <Configuration Example of Plasma Processing System> An example of a plasma processing system that can be employed as at least one of the process modules PM1 to PM12 will be described with reference to Fig. 2. Fig. 2 is a diagram for explaining the configuration example of the plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a controller 2.

[0043] In one embodiment, the plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0044] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma generated in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0045] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), a SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network). The control unit CU in FIG. 1 may also perform some or all of the functions of the control unit 2. The control unit 2 may also perform some of the functions of the control unit CU in FIG. 1. The control unit CU and / or the control unit 2 are examples of the "control unit" in the present disclosure.

[0046] 3, a configuration example of a capacitively coupled plasma processing apparatus will be described as an example of the plasma processing apparatus 1. FIG. 3 is a diagram for explaining the configuration example of a capacitively coupled plasma processing apparatus.

[0047] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0048] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0049] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0050] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0051] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0052] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0053] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0054] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0055] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0056] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0057] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0058] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0059] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0060] <Configuration Example of End Effector> Figure 4 is a diagram illustrating an example of an end effector EF according to one embodiment. In one embodiment, the end effector EF is disposed at the tip of a drive mechanism of a transfer robot. For example, the end effector EF may be used as the end effector EF11, EF12, EF21, or EF22 of the substrate processing system shown in Figure 1. That is, the end effector EF is configured to transfer objects between the vacuum chambers of the vacuum transfer modules TM1 and TM2 shown in Figure 1 and the processing chambers of the process modules PM1 to PM12 (including the plasma processing chamber 10 shown in Figures 2 and 3).

[0061] In one embodiment, the end effector EF has a proximal end 50 and a distal end 52, as shown in FIG. 4 . The end effector EF may be connected at the proximal end 50 to a drive mechanism of a transfer robot (e.g., the vacuum transfer robots TR1 and TR2 in FIG. 1 ). In one embodiment, the drive mechanism includes an articulated arm configured to be able to move up and down, rotate, and extend and retract. In one embodiment, the drive mechanism enables the end effector EF to perform one or more of the following movements: translation (horizontal movement in the XY plane), lifting and lowering (vertical movement in the Z-axis direction), and rotation (rotation about the X, Y, and Z axes).

[0062] In one embodiment, the object to be transported is placed on the distal end 52 of the end effector EF. In one embodiment, the distal end 52 may be configured in a generally U-shape and include two ends 52A, 52B spaced apart from each other. In one embodiment, a plurality of pads PD are provided on the upper surface of the distal end 52. The plurality of pads PD contact the lower surface of the object to be transported (e.g., a substrate) and hold the object to be transported. In one embodiment, the distal end 52 may be provided with one or more suction holes. The suction holes may be connected to an exhaust device such as a vacuum pump. In this case, the object to be transported is vacuum-sucked to the end effector EF via the suction holes.

[0063] In one embodiment, the end effector EF includes one or more sensing modules 54. The sensing modules 54 may be provided at the distal end 52 of the end effector EF. In one embodiment, one or more sensing modules 54 may be provided on one or more of the top, side, and bottom surfaces of the end effector EF. For example, as shown in FIG. 4 , one sensing module 54 may be provided on each of the side surfaces (XZ planes) of the end portions 52A and 52B.

[0064] 5 is a diagram illustrating an example of the sensing module 54. In one embodiment, the sensing module 54 includes a displacement sensor 542, a temperature sensor 544, and a temperature adjustment device 546. The sensing modules 54 are each connected to the unit controller UC via a transmission line, which allows transmission and reception of various data and the supply of power.

[0065] In one embodiment, the sensing module 54 may include a housing 540. The housing 540 may be separate from the main body of the end effector EF (a body that holds the transport target). The displacement sensor 542, the temperature sensor 544, and the temperature adjustment device 546 may be housed in the housing 540. Note that in one embodiment, the displacement sensor 542, the temperature sensor 544, and / or the temperature adjustment device 546 may be incorporated into the main body of the end effector EF and configured integrally with the main body, rather than being housed in the housing 540.

[0066] In one embodiment, the displacement sensor 542 is configured to acquire the distance to the measurement object. In one embodiment, the displacement sensor 542 is an optical displacement sensor. That is, the displacement sensor 542 may be configured to irradiate the measurement object with light and measure the distance to the measurement object. In this case, as shown in FIG. 5 , the displacement sensor 542 may include an optical head 542a that emits measurement light downward. In one example, the optical displacement sensor 542 is a confocal chromatic sensor. A confocal chromatic sensor measures the distance to the measurement object based on the wavelength of light focused and reflected on the measurement object. Note that the displacement sensor 542 is not limited to an optical displacement sensor. The displacement sensor 542 may be a displacement sensor of various types, such as a capacitance type, an ultrasonic type, or an eddy current type.

[0067] In one embodiment, the temperature sensor 544 is configured to output the temperature of the displacement sensor 542. The temperature sensor 544 may be disposed near the displacement sensor 542.

[0068] In one embodiment, the temperature adjustment device 546 is configured to adjust the temperature of the displacement sensor 542 based on the output of the temperature sensor 544. The temperature adjustment device 546 may be disposed near the displacement sensor 542. In one embodiment, the temperature adjustment device 546 may include a Peltier element. The amount of heat dissipated (heating) and absorbed (cooling) from the temperature adjustment device 546 to the displacement sensor 542 may be adjusted by controlling the polarity and magnitude of the current flowing through the Peltier element.

[0069] In one embodiment, the unit controller UC is configured to control various operations of the displacement sensor 542, the temperature sensor 544, and the temperature adjustment device 546. The unit controller UC may be configured to include a computer equipped with a CPU and memory. In one embodiment, the unit controller UC includes a power supply for supplying power to the displacement sensor 542, the temperature sensor 544, and the temperature adjustment device 546. In one embodiment, the unit controller UC may be part of the control unit CU ( FIG. 1 ) and / or the control unit 2 ( FIGS. 2 and 3 ) described above. The unit controller UC is an example of a "control unit" in the present disclosure.

[0070] In one embodiment, the unit controller UC controls the temperature adjustment device 546 so that the temperature of the displacement sensor 542 output from the temperature sensor 544 is within a reference range. For example, if the temperature of the displacement sensor 542 output from the temperature sensor 544 is higher than the reference range, the temperature adjustment device 546 cools the displacement sensor 542 or its surroundings. Alternatively, for example, if the temperature of the displacement sensor 542 output from the temperature sensor 544 is lower than the reference range, the temperature adjustment device 546 heats the displacement sensor 542 or its surroundings. This maintains the temperature of the displacement sensor 542 within the reference range. Therefore, even if the displacement sensor 542 has temperature dependency, the distance measurement value measured by the displacement sensor 542 can be prevented from being affected by temperature. The reference range may be set appropriately depending on the temperature dependency of the displacement sensor 542, the required measurement accuracy, and the like. For example, the reference range may be ±5°C, ±3°C, ±1°C, ±0.5°C, ±0.2°C, or ±0.1°C of the reference temperature. The reference temperature may be set appropriately depending on the specifications and the usage environment of the displacement sensor 542. For example, the reference temperature may be set appropriately to a temperature between 0°C and 100°C (for example, 25°C, 50°C, or 80°C).

[0071] 6A and 6B are diagrams for explaining an example of measurement using the end effector EF. The following describes an example in which the unit controller UC (see FIG. 5) determines the amount of wear of the ring assembly 112 (see FIG. 3) of the plasma processing apparatus 1 using the end effector EF.

[0072] First, the end effector EF is introduced from the transfer chamber into the plasma processing chamber 10 (hereinafter also referred to as "chamber 10") of the plasma processing apparatus 1 (see FIG. 3) by the drive mechanism. At this time, the unit controller UC controls the temperature adjustment device 546 so that the temperature of the displacement sensor 542 output from the temperature sensor 544 falls within a reference range. As a result, even if there is a temperature difference between the transfer chamber and chamber 10, the temperature of the displacement sensor 542 is maintained within the reference range. The end effector EF may hold a substrate W. The end effector EF may also hold a transfer object other than the substrate W (e.g., a substrate for a jig, a dummy substrate, a consumable member such as the ring assembly 112, etc.). The end effector EF does not necessarily have to hold a transfer object.

[0073] Next, the end effector EF moves horizontally (parallel to the XY plane) within the chamber 10. The displacement sensor 542 measures a first distance when the end effector EF moves to above the ring assembly 112 (hereinafter also referred to as the "first position"), as shown in FIG. 6A . The first distance is the distance d1 between the end effector EF and the ring assembly 112. The displacement sensor 542 measures a second distance when the end effector EF moves to above the electrostatic chuck 1111 (hereinafter also referred to as the "second position"), as shown in FIG. 6B . In the example of FIG. 6B , the second distance is the distance d2 between the end effector EF and the electrostatic chuck 1111. The second distance may also be the distance between the end effector EF and a reference wafer on the electrostatic chuck 1111. The end effector EF may move linearly from the first position to the second position by translating the drive mechanism of the transfer robot. The end effector EF may also be rotated about the proximal end 50 by the drive mechanism of the transport robot, thereby moving in an arc from the first position to the second position.

[0074] In one embodiment, the first distance and the second distance may be measured optically. For example, in the example shown in FIG. 6A , the displacement sensor 542 irradiates white light from the optical head 542a substantially perpendicular to the horizontal surface 112s of the ring assembly 112. The white light is focused at different heights for each wavelength contained in the white light. The displacement sensor 542 may receive only the light of the wavelength focused on the horizontal surface 112s of the ring assembly 112 as reflected light and measure the first distance based on the wavelength. The second distance may be measured in a similar manner.

[0075] The unit controller UC controls the temperature adjustment device 546 so that the temperature of the displacement sensor 542 output from the temperature sensor 544 is within a reference range during measurement of the first distance and the second distance. This maintains the temperature of the displacement sensor 542 within the reference range during measurement of the first distance and the second distance. Therefore, even if the displacement sensor 542 has temperature dependency, the measurement results can be prevented from being affected by the temperature inside the chamber 10. This ensures the measurement accuracy of the displacement sensor 542. If the displacement sensor 542 has temperature dependency, it is possible to correct the measurement results by taking into account the temperature dependency. However, if the temperature gradient or temperature change inside the chamber 10 is large, it is difficult to accurately reflect the temperature dependency in the correction. As a result, the measurement accuracy of the displacement sensor 542 may be reduced. In this regard, the displacement sensor 542 according to one embodiment maintains the temperature within the reference range during measurement, eliminating the need for correction of the measurement results and ensuring measurement accuracy.

[0076] In one embodiment, the unit controller UC may stop the movement of the end effector EF while measuring the first distance and the second distance. This suppresses vibrations caused by the movement of the end effector EF and can prevent a decrease in the measurement accuracy of the displacement sensor 542. Furthermore, if the displacement sensor 542 is an optical displacement sensor, the exposure time of light irradiated from the displacement sensor 542 onto the surface of the measurement object can be made longer than when the end effector EF is moved during measurement. This increases the amount of light reflected from the surface of the measurement object and received by the displacement sensor 542, thereby improving the measurement accuracy and resolution of the displacement sensor 542 compared to when the end effector EF is moved. This may be useful, for example, when the surface of the measurement object (e.g., the ring assembly 112) is highly uneven, reducing the amount of light received by the displacement sensor 542. Note that when measurements are performed while the end effector EF is stopped, the end effector EF is more susceptible to the temperature inside the chamber 10 than when measurements are performed while the end effector EF is moved. However, as described above, the temperature of the displacement sensor 542 itself is maintained within the reference range, so the measurement accuracy of the displacement sensor 542 can be ensured.

[0077] <Modification> FIG. 7 is a diagram illustrating another example of the sensing module 54. In one embodiment, the sensing module 54 includes a sensing device 548, a temperature sensor 544, and a temperature adjustment device 546. The sensing device 548 is configured to acquire information about the inside of the substrate processing chamber or the transfer chamber. In one embodiment, the sensing device 548 may be an imaging device, an optical sensor, or a combination thereof. The imaging device may be configured to capture images of each component of the substrate processing chamber (e.g., the electrostatic chuck 1111, the ring assembly 112, the shower head 13, etc., shown in FIG. 3). One example of the imaging device is a CCD camera. The optical sensor may be, for example, a light intensity sensor. The light intensity sensor may be configured to irradiate each component of the substrate processing chamber with light and measure the intensity of light reflected from the measurement object. The optical sensor may be, for example, the displacement sensor described above. The optical sensor may also have the functions of both a light intensity sensor and a displacement sensor.

[0078] The temperature sensor 544, temperature adjustment device 545, and unit controller UC shown in FIG. 7 may have the same configuration as described in FIG. 5 . That is, the temperature sensor 544 is configured to output the temperature of the sensing device 548. The temperature adjustment device 546 is configured to adjust the temperature of the sensing device 548 based on the output of the temperature sensor 544. The unit controller UC controls the temperature adjustment device 546 so that the temperature of the sensing device 548 output from the temperature sensor 544 falls within a reference range during measurement or imaging by the sensing device 548. This keeps the temperature of the sensing device 548 within the reference range. This prevents the sensing device 548 from being affected by the temperature environment of the end effector EF.

[0079] Embodiments of the present disclosure further include the following aspects.

[0080] (Supplementary Note 1) A substrate processing system comprising: a substrate processing chamber; a transfer chamber; a transfer robot configured to transfer a substrate between the substrate processing chamber and the transfer chamber, the transfer robot having an end effector configured to hold the substrate, the end effector having a displacement sensor configured to acquire a distance to an object in the substrate processing chamber, a temperature sensor configured to output a temperature of the displacement sensor, and a temperature adjustment device; and a control unit configured to control the temperature adjustment device so that an output of the temperature sensor is within a reference range while the displacement sensor is acquiring the distance.

[0081] (Supplementary Note 2) The substrate processing system described in Supplementary Note 1, wherein the substrate processing chamber includes: a substrate support disposed within the substrate processing chamber and having a substrate support surface and a ring support surface; and an annular member disposed on the ring support surface to surround the substrate on the substrate support surface; and the displacement sensor is configured to measure a first distance between the displacement sensor and the annular member.

[0082] (Supplementary Note 3) The substrate processing system according to Supplementary Note 2, wherein the control unit is configured to control the temperature adjustment device so that an output of the temperature sensor is within a reference range while the displacement sensor is measuring the first distance.

[0083] (Supplementary Note 4) The substrate processing system according to Supplementary Note 2 or Supplementary Note 3, wherein the control unit is configured to stop movement of the end effector while measuring the first distance.

[0084] (Supplementary Note 5) The substrate processing system according to any one of Supplementary Note 2 to Supplementary Note 4, wherein the displacement sensor is configured to measure a second distance between the displacement sensor and the substrate support surface.

[0085] (Supplementary Note 6) The substrate processing system according to Supplementary Note 5, wherein the control unit is configured to determine a wear amount of the annular member based on the first distance and the second distance.

[0086] (Supplementary Note 7) The substrate processing system according to any one of Supplementary Note 4 to Supplementary Note 6, wherein the control unit is configured to control the temperature adjustment device so that an output of the temperature sensor is within a reference range while the displacement sensor measures the second distance.

[0087] (Supplementary Note 8) The substrate processing system according to any one of Supplementary Note 4 to Supplementary Note 7, wherein the control unit is configured to stop movement of the end effector while the displacement sensor measures the second distance.

[0088] (Supplementary Note 9) The substrate processing system according to any one of Supplementary Note 1 to Supplementary Note 8, wherein the displacement sensor is an optical displacement sensor.

[0089] (Supplementary Note 10) The substrate processing system according to any one of Supplementary Note 1 to Supplementary Note 9, wherein the temperature adjustment device includes a Peltier element.

[0090] (Supplementary Note 11) The substrate processing system according to any one of Supplementary Note 1 to Supplementary Note 10, wherein the temperature adjustment device is disposed near the displacement sensor.

[0091] (Supplementary Note 12) The substrate processing system according to any one of Supplementary Note 1 to Supplementary Note 11, wherein the temperature sensor is disposed in the vicinity of the displacement sensor.

[0092] (Supplementary Note 13) A substrate processing system comprising: a substrate processing chamber; a transfer chamber; a transfer robot configured to transfer a substrate between the substrate processing chamber and the transfer chamber, the transfer robot having an end effector configured to hold the substrate, the end effector having a sensing device configured to acquire information about an interior of the substrate processing chamber, a temperature sensor configured to output a temperature of the sensing device, and a temperature adjustment device; and a control unit configured to control the temperature adjustment device so that an output of the temperature sensor is within a reference range while the sensing device acquires the information.

[0093] (Supplementary Note 14) The substrate processing system according to Supplementary Note 13, wherein the sensing device includes an imaging device.

[0094] (Supplementary Note 15) The substrate processing system according to Supplementary Note 13 or Supplementary Note 14, wherein the sensing device includes a displacement sensor.

[0095] (Supplementary Note 16) The substrate processing system according to any one of Supplementary Note 13 to Supplementary Note 15, wherein the control unit is configured to stop movement of the end effector while the sensing device acquires the information.

[0096] (Supplementary Note 17) The substrate processing system according to any one of Supplementary Note 13 to Supplementary Note 16, wherein the temperature adjustment device includes a Peltier element.

[0097] (Supplementary Note 18) The substrate processing system according to any one of Supplementary Note 13 to Supplementary Note 17, wherein the temperature adjustment device is disposed near the sensing device.

[0098] (Supplementary Note 19) The substrate processing system according to any one of Supplementary Note 13 to Supplementary Note 18, wherein the temperature sensor is disposed in the vicinity of the sensing device.

[0099] The above embodiments are described for the purpose of explanation and are not intended to limit the scope of the present disclosure. Various modifications can be made to the above embodiments without departing from the scope and spirit of the present disclosure. For example, some components in one embodiment can be added to other embodiments. Also, some components in one embodiment can be replaced with corresponding components in other embodiments.

[0100] REFERENCE SIGNS LIST 1: plasma processing apparatus, 2: control unit, 10: plasma processing chamber, 10s: plasma processing space, 11: substrate support, 112: ring assembly, 54: sensing module, 540: housing, 542: displacement sensor, 544: temperature sensor, 546: temperature control device, 548: sensing device, EF: end effector, PS: substrate processing system

Claims

1. A substrate processing system comprising: a substrate processing chamber; a transfer chamber; a transfer robot configured to transfer substrates between the substrate processing chamber and the transfer chamber, the transfer robot having an end effector configured to hold the substrate, the end effector having a displacement sensor configured to acquire a distance to an object in the substrate processing chamber, a temperature sensor configured to output a temperature of the displacement sensor, and a temperature adjustment device; and a control unit configured to control the temperature adjustment device so that an output of the temperature sensor is within a reference range while the displacement sensor is acquiring the distance.

2. The substrate processing system of claim 1, wherein the substrate processing chamber includes: a substrate support disposed within the substrate processing chamber and having a substrate support surface and a ring support surface; and an annular member disposed on the ring support surface to surround the substrate on the substrate support surface, and the displacement sensor is configured to measure a first distance between the displacement sensor and the annular member.

3. The substrate processing system according to claim 2, wherein the control unit is configured to control the temperature adjustment device so that the output of the temperature sensor is within a reference range while the displacement sensor is measuring the first distance.

4. The substrate processing system of claim 3, wherein the control unit is configured to stop movement of the end effector while measuring the first distance.

5. The substrate processing system of claim 2, wherein the displacement sensor is configured to measure a second distance between the displacement sensor and the substrate support surface.

6. The substrate processing system according to claim 5, wherein the control unit is configured to determine the amount of wear of the annular member based on the first distance and the second distance.

7. The substrate processing system according to claim 5, wherein the control unit is configured to control the temperature adjustment device so that the output of the temperature sensor is within a reference range while the displacement sensor is measuring the second distance.

8. The substrate processing system of claim 7, wherein the control unit is configured to stop movement of the end effector while the displacement sensor measures the second distance.

9. The substrate processing system according to any one of claims 1 to 8, wherein the displacement sensor is an optical displacement sensor.

10. The substrate processing system according to any one of claims 1 to 8, wherein the temperature control device includes a Peltier element.

11. The substrate processing system according to any one of claims 1 to 8, wherein the temperature adjustment device is disposed in the vicinity of the displacement sensor.

12. The substrate processing system according to any one of claims 1 to 8, wherein the temperature sensor is disposed in the vicinity of the displacement sensor.

13. A substrate processing system comprising: a substrate processing chamber; a transfer chamber; a transfer robot configured to transfer a substrate between the substrate processing chamber and the transfer chamber, the transfer robot having an end effector configured to hold the substrate, the end effector having a sensing device configured to acquire information about an interior of the substrate processing chamber, a temperature sensor configured to output a temperature of the sensing device, and a temperature adjustment device; and a control unit configured to control the temperature adjustment device so that an output of the temperature sensor is within a reference range while the sensing device acquires the information.

14. The substrate processing system of claim 13, wherein the sensing device includes an imaging device.

15. The substrate processing system of claim 13, wherein the sensing device includes an optical sensor.

16. The substrate processing system according to any one of claims 13 to 15, wherein the control unit is configured to stop movement of the end effector while the sensing device acquires the information.

17. The substrate processing system according to any one of claims 13 to 15, wherein the temperature control device includes a Peltier element.

18. The substrate processing system according to any one of claims 13 to 15, wherein the temperature control device is disposed in the vicinity of the sensing device.

19. The substrate processing system according to any one of claims 13 to 15, wherein the temperature sensor is disposed in proximity to the sensing device.

Images