Terahertz on-chip transmission line and terahertz chip

Abstract

The present application discloses a terahertz on-chip transmission line and a terahertz chip. The terahertz on-chip transmission line comprises a mode conversion structure and a TM0 mode transmission structure; the mode conversion structure is connected to the TM0 mode transmission structure; a metal conductor is arranged in the TM0 mode transmission structure; periodically arranged pillar-shaped holes are formed in the metal conductor, and the pillar-shaped holes are arranged in a transmission direction of the metal conductor.

Description

Terahertz on-chip transmission line and terahertz chip

[0001] Related applications

[0002] This application claims priority to Chinese patent application No. 202410228967.9 filed on February 29, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present application relates to the field of signal transmission technology, and in particular to a terahertz on-chip transmission line and a terahertz chip. Background Art

[0004] Currently, existing transmission line structures use the TEM mode (Transverse Electromagnetic Mode) or quasi-TEM mode to transmit terahertz signals. Since this type of mode has a close coupling relationship between the longitudinal electric field and the transverse magnetic field, a dual-conductor structure is required to provide the necessary mirror planes so that the longitudinal electric field and the transverse magnetic field can be effectively transmitted without leakage.

[0005] However, the dual-conductor structure in the above-mentioned existing transmission line structure may cause the electromagnetic field energy of the terahertz signal to be concentrated in the dielectric layer, resulting in high dielectric loss.

[0006] The above content is only used to assist in understanding the technical solution of this application and does not constitute an admission that the above content is prior art.

[0007] Summary of the Invention

[0008] The main purpose of the present application is to provide a terahertz on-chip transmission line and a terahertz chip, aiming to solve the technical problem that the dual-conductor structure in the prior art causes the electromagnetic field energy of the terahertz signal to be concentrated in the dielectric layer, resulting in high dielectric loss.

[0009] To achieve the above object, the present application provides a terahertz on-chip transmission line comprising: a mode conversion structure and a TM0 mode (Transverse Magnetic Mode, transverse magnetic wave mode) transmission structure;

[0010] The mode conversion structure is connected to the TM0 mode transmission structure;

[0011] The TM0 mode transmission structure is provided with a metal conductor;

[0012] The metal conductor is provided with periodically arranged hole columns, and each of the hole columns is arranged along the transmission direction of the metal conductor;

[0013] The mode conversion structure is used to convert an initial terahertz signal in a CPW mode (Coplanar Waveguide Mode) into a target terahertz signal in a TM0 mode, and constrain the target terahertz signal to propagate along the metal conductor;

[0014] The TM0 mode transmission structure is used to bind the electromagnetic field energy of the target terahertz signal to the metal conductor through each of the holes, so that the target terahertz signal propagates along the metal conductor.

[0015] In one embodiment, the hole columns include: a plurality of upper hole columns and lower hole columns having the same number as the upper hole columns;

[0016] Each of the upper hole columns and each of the lower hole columns are arranged in the metal conductor at a first preset distance;

[0017] Each of the upper hole columns and the corresponding lower hole columns are symmetrically arranged with respect to the central axis of the metal conductor, and each of the upper hole columns and the lower hole columns are parallel to the central axis of the metal conductor;

[0018] The height of each of the upper hole columns and each of the lower hole columns is equal to the height of the metal conductor.

[0019] In one embodiment, the mode conversion structure includes: a first grounding metal, a second grounding metal, and an intermediate conductor;

[0020] The first grounding metal and the second grounding metal are symmetrical about the central axis of the intermediate conductor;

[0021] The width of the first grounding metal and the width of the second grounding metal are both reduced in an exponential gradient form toward the TM0 mode transmission structure to form an open area;

[0022] The intermediate conductor is connected to the metal conductor in the TM0 mode transmission structure.

[0023] In one embodiment, the outer contour of the intermediate conductor forms a first angle with the center axis of the intermediate conductor;

[0024] The width of the end portion of the intermediate conductor is greater than the width of the starting portion of the intermediate conductor, the end portion is a portion away from the TM0 mode transmission structure, and the starting portion is a portion connected to the TM0 mode transmission structure;

[0025] The width of the starting point portion is equal to the width of the metal conductor of the TM0 mode transmission structure.

[0026] In one embodiment, the mode conversion structure further comprises: a plurality of upper transition holes and lower transition holes with the same number as the upper transition holes;

[0027] The upper transition hole columns and the lower transition hole columns are periodically arranged in the middle conductor;

[0028] The upper transition hole columns and the lower transition hole columns are symmetrically arranged about the central axis of the intermediate conductor.

[0029] In one embodiment, a line connecting the geometric centers of the upper transition holes and an upper outer contour of the intermediate conductor form a preset angle;

[0030] The geometric center line of each of the lower transition hole columns forms the preset angle with the lower outer contour of the intermediate conductor;

[0031] The reduction range of the distance between the symmetrically distributed upper transition hole columns and the lower transition hole columns is greater than the reduction range of the width of the intermediate conductor.

[0032] In one embodiment, the distance between each of the upper transition hole columns is a second preset distance;

[0033] The distance between each of the lower transition hole columns is the second preset distance;

[0034] The projection distance of the second preset distance on the center axis of the intermediate conductor is equal to the first preset distance.

[0035] At the terminal portion, the upper transition hole post and the lower transition hole post both extend beyond the intermediate conductor.

[0036] In one embodiment, the terahertz on-chip transmission line further comprises: a CPW transmission structure;

[0037] The CPW transmission structure includes: a CPW metal line, a first side metal layer and a second side metal layer;

[0038] The first side metal layer and the second side metal layer are symmetrically arranged with respect to the CPW metal line;

[0039] The first side metal layer and the second side metal layer are both grounded;

[0040] The first side metal layer is connected to the first ground metal of the mode conversion structure;

[0041] The second side metal layer is connected to the second ground metal of the mode conversion structure;

[0042] The CPW metal line is connected to the middle conductor of the mode conversion structure.

[0043] In addition, to achieve the above-mentioned objectives, the present application also proposes a terahertz chip, which includes the terahertz on-chip transmission line as described above.

[0044] The present application provides a terahertz on-chip transmission line and a terahertz chip. The terahertz on-chip transmission line includes: a mode conversion structure and a TM0 mode transmission structure; the mode conversion structure is connected to the TM0 mode transmission structure; a metal conductor is provided in the TM0 mode transmission structure; the metal conductor is provided with periodically arranged holes, and each hole is arranged along the transmission direction of the metal conductor; the mode conversion structure of the present application converts an initial terahertz signal in a CPW mode into a target terahertz signal in a TM0 mode, and constrains the target terahertz signal to propagate along the metal conductor; the TM0 mode transmission structure binds the electromagnetic field energy of the target terahertz signal to the metal conductor through each hole, so that the target terahertz signal propagates along the metal conductor. The present application confines the electromagnetic field energy of the target terahertz signal to the metal conductor through multiple holes on the metal conductor, thereby achieving propagation of the target terahertz signal along the metal conductor, avoiding the energy of the target terahertz signal from being concentrated in the dielectric layer, and effectively reducing dielectric loss. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] FIG1 is a schematic structural diagram of a first embodiment of a terahertz on-chip transmission line of the present application;

[0046] FIG2 is a schematic diagram showing the distribution of holes in the first embodiment of the terahertz on-chip transmission line of the present application;

[0047] FIG3 is a schematic structural diagram of a second embodiment of a terahertz on-chip transmission line of the present application;

[0048] FIG4 is a schematic structural diagram of an intermediate conductor in a third embodiment of a terahertz on-chip transmission line of the present application;

[0049] FIG5 is a schematic diagram of the structure of the terahertz chip of the present application.

[0050] Description of Figure Numbers:

[0051] The realization of the objectives, functional features and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0052] It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0053] The technical solution of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all embodiments obtained by ordinary technicians in this field without making any creative work are within the scope of protection of this application.

[0054] It should be noted that the descriptions of "first" and "second" in the embodiments of this application are for descriptive purposes only and should not be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features specified as "first" and "second" may explicitly or implicitly include at least one of such features. In addition, the technical solutions of various embodiments may be combined with each other, but this must be based on the fact that they can be implemented by ordinary technicians in this field. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0055] Refer to FIG. 1 , which is a schematic structural diagram of a first embodiment of a terahertz on-chip transmission line of the present application.

[0056] As shown in FIG. 1 , in this embodiment, the terahertz on-chip transmission line includes a mode conversion structure 10 and a TM0 mode transmission structure 20 .

[0057] The mode conversion structure 10 is connected to the TM0 mode transmission structure 20 .

[0058] The TM0 mode transmission structure 20 is provided with a metal conductor 201 .

[0059] The metal conductor 201 is provided with periodically arranged holes 202 , and each of the holes 202 is arranged along the transmission direction of the metal conductor 201 .

[0060] It should be noted that the metal conductor 201 is provided at the center of the TM0 mode transmission structure 20, and the central axis of the metal conductor 201 is the central axis of the TM0 mode transmission structure 20. The metal conductor 201 can be used as a metal transmission line to transmit terahertz signals.

[0061] It is understandable that the hole column 202 in the metal conductor 201 may be an air hole column, and the shape of the hole column 202 may be a cylinder, an elliptical cylinder, a polygonal cylinder, etc., which is not limited in this embodiment.

[0062] It should be noted that, with reference to FIG2 , FIG2 is a schematic diagram of the distribution of the holes in the first embodiment of the terahertz on-chip transmission line of the present application. In FIG2 , the TM0 mode transmission structure 20 is in the direction of the OXYZ coordinate axis in the figure, and the x direction can be the transmission direction of the metal conductor. Holes 202 with fixed intervals are provided on both sides of the metal conductor 201. Each hole 202 is arranged along the x direction, and the intervals between each hole 202 in the x direction are equal, so that each hole 202 is periodically arranged along the transmission direction of the metal conductor 201, wherein the intervals between each hole 202 in the y direction are also equal. In addition, the TM0 mode transmission structure 20 is on the substrate 200, and the portion of the substrate 200 other than the TM0 mode transmission structure 20 can be a dielectric layer. The material of the above-mentioned substrate 200 can be single crystal silicon.

[0063] It is understood that in the production process of manufacturing the TM0 mode transmission structure 20, the metal conductor 201 can be realized on the substrate 200 through a corresponding process, and then a corresponding processing method is applied in the x-direction to peel off the hole pillars 202 arranged with a fixed value from the metal conductor 201. In the z-direction, the thickness of the hole pillars 202 is equal to the thickness of the metal conductor 201.

[0064] The mode conversion structure 10 is used to convert an initial terahertz signal in the CPW mode into a target terahertz signal in the TM0 mode, and constrain the target terahertz signal to propagate along the metal conductor 201 .

[0065] In a specific implementation, the above-mentioned mode conversion structure 10 can realize the conversion between CPW mode and TM0 mode, can convert the received initial terahertz signal of CPW mode into the target terahertz signal of TM0 mode, and can constrain the distribution of the target terahertz signal, induce the target terahertz signal to propagate along the transmission direction of the metal conductor 201, so that the target terahertz signal can propagate into the metal conductor 201 of the TM0 mode transmission structure 20.

[0066] The TM0 mode transmission structure 20 is used to confine the electromagnetic field energy of the target terahertz signal to the metal conductor 201 through each of the holes 202, so that the target terahertz signal propagates along the metal conductor 201.

[0067] In a specific implementation, the above-mentioned TM0 mode transmission structure 20 can confine the electromagnetic field energy of the target terahertz signal of the TM0 mode between the holes 202 on the metal conductor 201. Therefore, the target terahertz signal can be concentrated in the metal conductor 201 for propagation through the single conductor structure, which can avoid the situation in which the electromagnetic field energy of the target terahertz signal of the dual-conductor structure is concentrated in the dielectric layer, thereby effectively reducing the dielectric loss.

[0068] It should be understood that the rate of change of the frequency and insertion loss response can be controlled by adjusting the arrangement period (ie, the spacing between adjacent holes 202 in the x-direction) and the size of the holes 202.

[0069] Furthermore, the target terahertz signal in the TM0 mode of the TM0 mode transmission structure 20 can be concentrated and transmitted within the metal conductor 201, further facilitating the miniaturization and integration of terahertz on-chip transmission lines. Furthermore, the target terahertz signal samples the TM0 mode, and its cutoff frequency can reach 0, allowing it to remain permanently within the TM0 mode transmission structure 20. Furthermore, as a base film, it exhibits minimal losses.

[0070] The terahertz on-chip transmission line of this embodiment includes: a mode conversion structure and a TM0 mode transmission structure; the mode conversion structure is connected to the TM0 mode transmission structure; a metal conductor is provided in the TM0 mode transmission structure; the metal conductor is provided with periodically arranged holes, and each hole is arranged along the transmission direction of the metal conductor; the mode conversion structure of this embodiment converts an initial terahertz signal in the CPW mode into a target terahertz signal in the TM0 mode, and constrains the target terahertz signal to propagate along the metal conductor; the TM0 mode transmission structure confines the electromagnetic field energy of the target terahertz signal to the metal conductor through each hole, so that the target terahertz signal propagates along the metal conductor. This embodiment confines the electromagnetic field energy of the target terahertz signal to the metal conductor through multiple holes on the metal conductor, thereby achieving the target terahertz signal propagating along the metal conductor, avoiding the energy of the target terahertz signal from being concentrated in the dielectric layer, and effectively reducing dielectric loss.

[0071] Refer to FIG3 , which is a schematic structural diagram of a second embodiment of the terahertz on-chip transmission line of the present application.

[0072] Based on the above first embodiment, in this embodiment, the hole pillars 202 include a plurality of upper hole pillars 2021 and the same number of lower hole pillars 2022 as the upper hole pillars 2021 .

[0073] Each of the upper hole pillars 2021 and each of the lower hole pillars 2022 are arranged in the metal conductor 201 at a first preset interval.

[0074] It should be noted that the shapes and sizes of the upper hole columns 2021 and the lower hole columns 2022 are consistent.

[0075] It is understandable that the first preset distance may be preset according to the actual required working frequency band and the size constraint of the application area.

[0076] It should be noted that Figure 3 is a top view of the structure in Figure 2 on the xy plane. Each upper hole column 2021 and each lower hole column 2022 are distributed along the x direction, and the spacing between adjacent upper hole columns 2021 is the first preset spacing, and the spacing between adjacent lower hole columns 2022 is also the first preset spacing.

[0077] Each of the upper hole columns 2021 and the corresponding lower hole columns 2022 are symmetrically arranged with respect to the central axis of the metal conductor 201 , and each of the upper hole columns 2021 and the lower hole columns 2022 are parallel to the central axis of the metal conductor 201 .

[0078] In a specific implementation, the upper and lower contours of the above-mentioned metal conductor 201 are parallel to the x-axis, each upper hole column 2021 and each lower hole column 2022 are symmetrical with the central axis of the metal conductor 201 in the y-axis direction, and the geometric center line of each upper hole column 2021 and the geometric center line of each lower hole column 2022 are parallel to the central axis of the metal conductor 201.

[0079] When the upper hole column 2021 and the lower hole column 2022 are cylinders, the geometric center may be the center of the hole column surface.

[0080] It should be understood that if the upper hole column 2021 and the lower hole column 2022 are not symmetrically distributed about the central axis of the metal wire 201, parasitic modes are likely to appear in the area on the side with a larger area from the upper hole column 2021 and the lower hole column 2022 to the edge of the metal wire 201, which increases the loss. Therefore, by distributing the upper hole column 2021 and the lower hole column 2022 symmetrically about the central axis of the metal wire 201, in addition to confining the TM0 mode signal between the hole columns 202, the generation of parasitic modes can also be suppressed.

[0081] The height of each of the upper hole columns 2021 and each of the lower hole columns 2022 is equal to the height of the metal conductor 201 .

[0082] In a specific implementation, when the thickness of the hole pillars 202 and the metal conductor 201 are different, the actual processing process requires precise separation of the thickness of each hole pillar 202 from the metal conductor 201, which increases the difficulty of the production process. In this embodiment, the height of each upper hole pillar 2021 and each lower hole pillar 2022 on the z-axis is equal to the height of the metal conductor 201 on the z-axis, that is, the thickness of each upper hole pillar 2021 and each lower hole pillar 2022 is the same as the thickness of the metal conductor 201, which effectively reduces the difficulty of the production process and is more conducive to processing.

[0083] 1 , based on the above-mentioned second embodiment, in this embodiment, the mode conversion structure 10 includes: a first grounding metal 101 , a second grounding metal 102 and an intermediate conductor 103 .

[0084] The first grounding metal 101 and the second grounding metal 102 are symmetrical about the central axis of the intermediate conductor 103 .

[0085] The width of the first grounding metal 101 and the width of the second grounding metal 102 are both reduced toward the TM0 mode transmission structure 20 in an exponential gradient form to form an open area.

[0086] The intermediate conductor 103 is connected to the metal conductor 201 in the TM0 mode transmission structure 10 .

[0087] It should be noted that Figure 1 is a top view of the structure in Figure 2 on the xy plane. The widths of the first and second ground metals 101, 102 gradually decrease exponentially along the y-axis, reaching zero or near zero when reaching the TM0 mode transmission structure 20, forming an open region. In other words, the ground region formed by the first and second ground metals 101, 102 gradually transforms into an open region, thereby completing the transition between the CPW mode and the TM0 mode, and converting the initial CPW mode terahertz signal into the target TM0 mode terahertz signal.

[0088] For ease of understanding, an xy coordinate system is established with the midpoint of the central axis of the TM0 mode transmission structure 20 as the origin. The gradient profiles of the first ground metal 101 and the second ground metal 102 can satisfy an exponential function, for example, y=0.035e 0.37x The above exponential function is for illustration only, and the size of the specific exponential gradient form and the shape of the exponential line can be adjusted according to the actual size and transmission efficiency requirements, which is not limited in this embodiment.

[0089] Furthermore, in this embodiment, the outer contour of the intermediate conductor 103 forms a first angle with the center axis of the intermediate conductor 103 .

[0090] It should be noted that the first angle can be set according to production requirements, and the upper outer contour and the lower outer contour of the intermediate conductor 103 both form the first angle with the central axis of the intermediate conductor 103 .

[0091] The width of the end portion of the intermediate conductor 103 is greater than the width of the starting portion of the intermediate conductor 103 . The end portion is the portion away from the TM0 mode transmission structure, and the starting portion is the portion connected to the TM0 mode transmission structure 10 .

[0092] The width of the starting point portion is equal to the width of the metal conductor of the TM0 mode transmission structure.

[0093] Referring to Figure 4, Figure 4 is a structural schematic diagram of the intermediate conductor in the third embodiment of the terahertz on-chip transmission line of the present application. In Figure 4, the width of the intermediate conductor 103 on the y-axis gradually decreases from the end portion to the starting portion, forming a trapezoid. At the starting portion, the width of the intermediate conductor 103 is consistent with the width of the metal conductor 201 in the TM0 mode transmission structure 10, so that the intermediate conductor 103 is accurately docked with the metal conductor 201, ensuring that the target terahertz signal of the TM0 mode excited in the intermediate conductor 103 can be transmitted to the metal conductor 201.

[0094] Further, referring to FIG. 4 , in this embodiment, the mode conversion structure further includes: a plurality of upper transition holes 1031 and lower transition holes 1032 having the same number as the upper transition holes.

[0095] The upper transition hole columns 1031 and the lower transition hole columns 1032 are periodically arranged in the intermediate conductor 103 .

[0096] The upper transition hole columns 1031 and the lower transition hole columns 1032 are symmetrically arranged about the central axis of the intermediate conductor 103 .

[0097] It should be noted that the upper transition hole column 1031 and the lower transition hole column 1032 have the same shape as the upper hole column 2021 and the lower hole column 2022 in the TM0 mode transmission structure 20.

[0098] It is understandable that the upper transition hole columns 1031 are periodically arranged at fixed intervals on the upper outer contour of the intermediate conductor 103 , and the lower transition hole columns 1032 are periodically arranged at fixed intervals on the lower outer contour of the intermediate conductor 103 .

[0099] Furthermore, in this embodiment, a line connecting the geometric centers of the upper transition holes 1031 and the upper outer contour of the intermediate conductor 103 form a preset angle 001.

[0100] The geometric center line of each of the lower transition hole columns 1032 and the lower outer contour of the intermediate conductor 103 form the preset angle 001.

[0101] It should be noted that, as shown in FIG4 , taking the upper transition hole column 1031 and the lower transition hole column 1032 as cylinders, the geometric center is the center of the cylindrical surface. In the process of producing the transition hole column, a preset angle 001 is first set according to production requirements, and then a dotted line L1 is drawn along the upper outer contour line of the intermediate conductor 103. Then, an inclined dotted line L2 is drawn starting from the geometric center of the upper transition hole column 1031 in the starting portion, so that the angle formed by L1 and L2 is the preset angle 001. Finally, the geometric centers of the other upper transition hole columns 1031 are arranged at equal intervals along L2. Among them, the arrangement process of each lower transition hole column 1032 can be referred to the above description and will not be repeated here.

[0102] The reduction range of the distance between the symmetrically distributed upper transition hole columns 1031 and the lower transition hole columns 1032 is greater than the reduction range of the width of the intermediate conductor 103 .

[0103] It should be noted that, in the y-axis direction, the spacing between the symmetrically distributed upper transition hole pillars 1031 and the lower transition hole pillars 1032 gradually decreases, and the reduction is greater than the reduction in the width of the intermediate conductor 103. Furthermore, at the starting point of the intermediate conductor 103, the spacing between the symmetrically distributed upper transition hole pillars 1031 and the lower transition hole pillars 1032 is equal to the spacing between the symmetrically distributed upper hole pillars 2021 and the lower hole pillars 2022 in the intermediate conductor 10.

[0104] Furthermore, in this embodiment, the distances between the upper transition hole columns 1031 are all the second preset distances.

[0105] The distance between each of the lower transition hole columns 1032 is the second preset distance.

[0106] The projection distance of the second preset distance on the central axis of the intermediate conductor 103 is equal to the first preset distance.

[0107] In a specific implementation, the first preset spacing is illustrated as 002. After determining 002 in the TM0 mode transmission structure 10, the above-mentioned second preset spacing can be determined based on 002. The determined second preset spacing satisfies that the projection distance on the x-axis (i.e., the center axis of the intermediate conductor 103) is equal to 002.

[0108] Furthermore, in this embodiment, at the end portion, both the upper transition hole column 1031 and the lower transition hole column 1032 extend beyond the intermediate conductor 103 .

[0109] It should be noted that the number of upper transition hole columns 1031 and lower transition hole columns 1032 is determined based on the length of the mode conversion structure 10, and the preset angle 001 is determined according to the number of transition hole columns and the first preset spacing, ensuring that at the end portion, the upper transition hole column 1031 and the lower transition hole column 1032 both completely extend beyond the intermediate conductor 103.

[0110] It is understandable that the intermediate conductor 103 , each transition hole column 1031 and each lower transition hole column 1032 constitute a conversion transition region, which can optimize the transmission performance of the mode conversion structure 10 .

[0111] In a specific implementation, the above-mentioned conversion transition zone is also transitioned by introducing two rows of holes. The difference from the TM0 mode transmission structure 20 is that the geometric center line of the transition hole column in the gradual transition zone forms a preset angle with the outer contour line of the intermediate conductor 103. The transition hole columns (i.e., the upper transition hole column 1031 and the lower transition hole column 1032) are evenly distributed along the line connecting the geometric centers. From the overall structural point of view, the intermediate conductor 103, from the end point to the starting point, first presents a form of no transition hole column, then a form of partial transition hole column, and then a form of all transition hole columns.

[0112] Specifically, starting from the endpoint, the spacing between the edges of the symmetrically distributed transition holes on either side of the center conductor at the endpoint is greater than the width of the center conductor 103 at that location. Then, along the direction from the endpoint to the starting point (i.e., TM0 transmission structure 20), the edges of the symmetrically distributed transition holes gradually decrease, and the magnitude of the decrease is greater than the magnitude of the decrease in the width of the center conductor 103. Until the TM0 transmission structure 20, the spacing between the symmetrically distributed transition holes on either side of the center conductor equals the spacing between the holes 202 in the TM0 transmission structure 20. This constrains the distribution of TM0 mode signals and guides the propagation direction of TM0 mode signals, preventing impedance abrupt changes and reducing return loss caused by mode conversion.

[0113] Furthermore, referring to FIG. 1 , in this embodiment, the terahertz on-chip transmission line further includes: a CPW transmission structure 30 .

[0114] The CPW transmission structure includes: a CPW metal line 301 , a first-side metal layer 3021 , and a second-side metal layer 3022 .

[0115] The first side metal layer 3021 and the second side metal layer 3022 are symmetrically arranged with respect to the CPW metal line 301 .

[0116] The first side metal layer 3021 and the second side metal layer 3022 are both grounded.

[0117] The first side metal layer 3021 is connected to the first ground metal 101 of the mode conversion structure 10 .

[0118] The second-side metal layer 3022 is connected to the second grounding metal 102 of the mode conversion structure 10 .

[0119] The CPW metal line 301 is connected to the intermediate conductor 103 of the mode conversion structure 10 .

[0120] It should be noted that, at the connection between the CPW metal line 301 and the mode conversion structure 10 , the width of the CPW metal line 301 and the intermediate conductor 103 are equal.

[0121] It is understandable that the first side metal layer 3021 and the second side metal layer 302 can serve as grounding areas.

[0122] In a specific implementation, the impedance of the CPW transmission structure 30 can be adjusted by adjusting the width of the CPW metal line 301 and the gap width between the CPW metal line 301 and the metal layers on both sides to achieve impedance matching. For example, in practical applications, the impedance value can be selected as 50 ohm.

[0123] For ease of understanding, as an example, the value of the preset angle can satisfy the following formula:

[0124] Wherein, 001 is the preset angle, 020 is the width of the CPW metal line, 004 is the spacing between the symmetrically distributed holes in the metal conductor, 005 is the hole diameter, 010 is the length of the CPW metal line 301, 003 is the width of the metal conductor, and n is the number of transition holes.

[0125] It should be understood that the length and width of the mode conversion structure 10 can be determined according to the actual application area size and transmission efficiency. And the number of transition holes can be adjusted according to whether the hole at the end point completely exceeds the metal transmission line. <round(010 / 002)。

[0126] It should be noted that the formula satisfied by the above-mentioned preset angle is for illustration only and does not limit this embodiment.

[0127] In addition, in this embodiment, the mode conversion structure 10 and the CPW transmission structure 30 on the left and right sides of Figure 1 are symmetrical based on the TM0 mode transmission structure 20. This embodiment and the following embodiments are all described with the mode conversion structure 10 and the CPW transmission structure 30 on the left side of Figure 1. For the mode conversion structure 10 and the CPW transmission structure 30 on the right side, please refer to the description on the left side, and this embodiment will not be repeated here.

[0128] In addition, an embodiment of the present application further provides a terahertz chip, which includes the terahertz on-chip transmission line described in the above embodiment.

[0129] Referring to Figure 5, which is a schematic diagram of the structure of the terahertz chip of the present application, the terahertz chip includes a mixer, a terahertz low-noise amplifier (LNA), a terahertz filter, an on-chip integrated antenna, and a terahertz on-chip transmission line. The on-chip transmission line connects the mixer output, the LNA input / output, and the filter input / output, respectively, and can also feed the on-chip integrated antenna.

[0130] It should be noted that, in this document, the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or system comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or system. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or system comprising the element.

[0131] The serial numbers of the above-mentioned embodiments of the present application are for description only and do not represent the advantages or disadvantages of the embodiments.

[0132] The above are merely optional embodiments of the present application and do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A terahertz on-chip transmission line, wherein: The terahertz on-chip transmission line includes: a mode conversion structure and a TM0 mode transmission structure; The mode conversion structure is connected to the TM0 mode transmission structure; The TM0 mode transmission structure is provided with a metal conductor; The metal conductor is provided with periodically arranged hole columns, and each of the hole columns is arranged along the transmission direction of the metal conductor; The mode conversion structure is used to convert the initial terahertz signal in the CPW mode into a target terahertz signal in the TM0 mode, and constrain the target terahertz signal to propagate along the metal conductor; The TM0 mode transmission structure is used to bind the electromagnetic field energy of the target terahertz signal to the metal conductor through each of the holes, so that the target terahertz signal propagates along the metal conductor.

2. The terahertz on-chip transmission line according to claim 1, wherein: The hole columns include: a plurality of upper hole columns and lower hole columns with the same number as the upper hole columns; Each of the upper hole columns and each of the lower hole columns are arranged in the metal conductor at a first preset distance; Each of the upper hole columns and the corresponding lower hole columns are symmetrically arranged with respect to the central axis of the metal conductor, and each of the upper hole columns and the lower hole columns are parallel to the central axis of the metal conductor; The height of each of the upper hole columns and each of the lower hole columns is equal to the height of the metal conductor.

3. The terahertz on-chip transmission line according to claim 2, wherein: The mode conversion structure includes: a first grounding metal, a second grounding metal and an intermediate conductor; The first grounding metal and the second grounding metal are symmetrically arranged about the central axis of the intermediate conductor; The width of the first grounding metal and the width of the second grounding metal are both reduced in an exponential gradient form toward the TM0 mode transmission structure to form an open area; The intermediate conductor is connected to the metal conductor in the TM0 mode transmission structure.

4. The terahertz on-chip transmission line according to claim 3, wherein: The outer contour of the intermediate conductor forms a first angle with the center axis of the intermediate conductor; The width of the end portion of the intermediate conductor is greater than the width of the starting portion of the intermediate conductor, the end portion is a portion away from the TM0 mode transmission structure, and the starting portion is a portion connected to the TM0 mode transmission structure; The width of the starting point portion is equal to the width of the metal conductor of the TM0 mode transmission structure.

5. The terahertz on-chip transmission line according to claim 4, wherein: The mode conversion structure further comprises: a plurality of upper transition holes and lower transition holes with the same number as the upper transition holes; The upper transition hole columns and the lower transition hole columns are periodically arranged in the middle conductor; The upper transition hole columns and the lower transition hole columns are symmetrically arranged about the central axis of the intermediate conductor.

6. The terahertz on-chip transmission line according to claim 5, wherein: A line connecting the geometric centers of the upper transition holes and the upper outer contour of the intermediate conductor forms a preset angle; The geometric center line of each of the lower transition hole columns forms the preset angle with the lower outer contour of the intermediate conductor; The reduction range of the distance between the symmetrically distributed upper transition hole columns and the lower transition hole columns is greater than the reduction range of the width of the intermediate conductor.

7. The terahertz on-chip transmission line according to claim 6, wherein: The distances between the upper transition hole columns are all the second preset distances; The distance between each of the lower transition hole columns is the second preset distance; The projection distance of the second preset distance on the center axis of the intermediate conductor is equal to the first preset distance.

8. The terahertz on-chip transmission line according to claim 7, wherein: At the terminal portion, the upper transition hole post and the lower transition hole post both extend beyond the intermediate conductor.

9. The terahertz on-chip transmission line according to any one of claims 3 to 7, wherein: The terahertz on-chip transmission line further includes: a CPW transmission structure; The CPW transmission structure includes: a CPW metal line, a first side metal layer and a second side metal layer; The first side metal layer and the second side metal layer are symmetrically arranged with respect to the CPW metal line; The first side metal layer and the second side metal layer are both grounded; The first side metal layer is connected to the first ground metal of the mode conversion structure; The second side metal layer is connected to the second ground metal of the mode conversion structure; The CPW metal line is connected to the middle conductor of the mode conversion structure.

10. A terahertz chip, wherein: The terahertz chip comprises the terahertz on-chip transmission line according to any one of claims 1 to 9.

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