Laser and laser projection apparatus

Abstract

Provided in the embodiments of the present application are a laser and a laser projection apparatus. The laser comprises: a housing for forming an accommodating space; a support structure located in the housing; and a light-emitting chip located on the support structure. The support structure comprises a diamond substrate and a first transition layer, wherein the first transition layer is located between the light-emitting chip and the diamond substrate, and an elastic modulus of the first transition layer is smaller than that of the diamond substrate.

Description

Lasers and laser projection equipment

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office of the People's Republic of China on February 26, 2024, with application number 202410211447.7; this application claims priority to the Chinese patent application filed with the State Intellectual Property Office of the People's Republic of China on June 27, 2024, with application number 202410843157.4; the entire contents of which are incorporated by reference into this application. Technical Field

[0003] The present application relates to the field of projection display technology, and in particular to a laser and a laser projection device. Background Art

[0004] Currently, lasers include a housing and a light-emitting chip, with the light-emitting chip mounted on the base plate of the housing. Conventional methods for mounting the light-emitting chip on the base plate of the housing involve first securing the light-emitting chip to a heat sink, which is then secured to the base plate. Summary of the Invention

[0005] The present invention provides a laser device, comprising:

[0006] A tube shell, the tube shell comprising a bottom plate and a side wall, wherein an opening at one end of the side wall is closed by the bottom plate to form an accommodating space;

[0007] A light-emitting chip is located in the accommodating space; the light-emitting chip is used to emit initial light;

[0008] a connecting unit, located at least between the light-emitting chip and the base plate;

[0009] Wherein, the light emitting chip is fixed to one side of the base plate through the connecting unit.

[0010] The embodiment of the present application also provides a laser projection device, including the above-mentioned laser;

[0011] A light valve modulation component, located at the light output side of the laser, configured to modulate the incident light and then reflect it;

[0012] A projection lens is located on the reflected light path of the light valve modulation component and is used to form an image of the output light of the light valve modulation component. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] FIG1 is a schematic diagram of an explosion structure of a laser provided in the related art;

[0014] FIG2 is a schematic diagram of a structure in which a light-emitting component is located within a tube shell according to the related art;

[0015] FIG3 is a schematic diagram of a eutectic bonding process between a light emitting chip and a heat sink in the related art;

[0016] FIG4 is a schematic diagram of a eutectic welding curve in related art;

[0017] FIG5 is a schematic diagram of stress simulation during eutectic welding in the related art;

[0018] FIG6 is a schematic diagram of a top view of a light emitting assembly in the related art;

[0019] FIG7 is a side view schematic diagram of a light emitting assembly in the related art;

[0020] FIG8 is a schematic diagram of stress distribution on the welding surface of an aluminum nitride heat sink in the related art;

[0021] FIG9 is a schematic diagram of stress distribution on the welding surface of a diamond heat sink in the related art;

[0022] FIG10 shows a schematic structural diagram of a laser provided by some embodiments of the present application;

[0023] FIG11 is a schematic diagram showing an optical path of a laser provided in some embodiments of the present application;

[0024] FIG12 is a schematic structural diagram of another laser provided in an embodiment of the present application;

[0025] FIG13 is a schematic top view of an integrated protrusion structure provided in an embodiment of the present application;

[0026] FIG14 is a schematic structural diagram of a split-type protrusion structure provided in an embodiment of the present application;

[0027] FIG15 is a schematic structural diagram of another laser provided in an embodiment of the present application;

[0028] FIG16 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0029] FIG17 is a schematic structural diagram of another laser provided in an embodiment of the present application;

[0030] FIG18 is a schematic diagram of stress distribution on the welding surface of a connection unit provided in an embodiment of the present application;

[0031] FIG19 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0032] FIG20 is a schematic diagram of thermal simulation when the thickness of the transition layer is equal to 0 μm according to an embodiment of the present application;

[0033] FIG21 is a schematic diagram of thermal simulation when the thickness of the transition layer is 50 μm provided in an embodiment of the present application;

[0034] FIG22 is a schematic diagram of thermal simulation when the thickness of the transition layer is equal to 75 μm provided in an embodiment of the present application;

[0035] FIG23 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0036] FIG24 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0037] FIG25 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0038] FIG26 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0039] FIG27 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0040] FIG28 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0041] FIG29 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0042] FIG30 is a diagram showing the relationship between thickness, coefficient N and stress value provided in an embodiment of the present application;

[0043] FIG31 is a diagram showing the relationship between the thickness entropy coefficient M and the stress value provided in an embodiment of the present application;

[0044] FIG32 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0045] FIG33 is a schematic structural diagram of another laser provided in an embodiment of the present application;

[0046] FIG34 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0047] FIG35 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0048] FIG36 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0049] FIG37 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0050] FIG38 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0051] FIG39 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0052] FIG40 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0053] FIG41 is a schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0054] Figure 42 is a structural schematic diagram of a laser projection device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0055] In order to make the purpose and implementation of this application clearer, the exemplary implementation of this application will be clearly and completely described below in conjunction with the drawings in the exemplary embodiments of this application. Obviously, the described exemplary embodiments are only part of the embodiments of this application, not all of the embodiments.

[0056] The laser projection industry is currently experiencing rapid growth, with lasers, as a key component, playing an irreplaceable role. Lasers consist of a housing and a light-emitting chip. After production, the light-emitting chip is packaged into a housing to form the laser. Therefore, the packaging of the light-emitting chip has a significant impact on the application, cost, and performance of the final laser.

[0057] The mainstream laser packaging technologies can be divided into two types: metal packaging and ceramic packaging. With the development of technology, future lasers will develop in the direction of miniaturization, integration, and simplicity.

[0058] Figure 1 is a schematic diagram of the exploded structure of a laser provided in related art, and Figure 2 is a schematic diagram of the structure of a light-emitting assembly located within a housing provided in related art. As shown in Figures 1 and 2, the laser comprises a housing 101, a light-emitting assembly 102, a cover 103, a light window 104, and a collimating lens 105. Housing 101 comprises sidewalls and a base plate forming a housing. Light-emitting assembly 102 is located within the housing formed by housing 101 and is secured to the base plate.

[0059] 2 , the light emitting assembly 102 includes a light emitting chip 106 , a heat sink 107 , and a beam shaping element 108 . During packaging, the light emitting chip 106 is first fixed to the heat sink 107 , and then the heat sink 107 is fixed to the tube housing 101 .

[0060] However, the size of heat sink 107 is larger than that of light-emitting chip 106, increasing the volume of tube housing 101 and hindering the miniaturization of tube housing 101, and thus the miniaturization of the laser. Furthermore, the light-emitting chip 106 is first fixed to heat sink 107, and then to tube housing 101. This, on the one hand, results in multiple structural interfaces during chip mounting, thus extending the heat dissipation path of light-emitting chip 106 and creating a large thermal resistance, which is not conducive to the heat dissipation of light-emitting chip 106. On the other hand, it increases the number of steps required for chip mounting, increasing the manufacturing cost.

[0061] In some embodiments, in order to improve the thermal conductivity of the heat sink 107 , the heat sink 107 is made of diamond material.

[0062] Diamond has an extremely high thermal conductivity of approximately 2000 (W / mK), making it a crucial material for improving device heat dissipation. Light-emitting chip 106 is typically fabricated from gallium nitride (GaN). Due to the significant lattice and thermal mismatch between diamond and GaN, eutectic soldering of light-emitting chip 106 to heat sink 107 (diamond heat sink), as shown in Figure 3, requires a eutectic heating station 5' for heating. 4 , the eutectic welding process includes a preheating stage S1 and a welding cooling stage S2. In the preheating stage S1, the welding temperature gradually increases, and the welding temperature is as high as 350°C. In the welding cooling stage S2, the welding temperature is maintained at a high temperature for a period of time and then rapidly decreases. In the process of increasing and decreasing the welding temperature, the expansion and contraction amounts of the diamond heat sink and the light-emitting chip 106 are inconsistent, and a large stress is generated on the welding surface between the light-emitting chip 106 and the diamond heat sink. The stress suppresses the deformation of the light-emitting chip 106. In severe cases, the light-emitting chip 106 is broken, and the corresponding light-emitting chip 106 has extremely low power, or even fails.

[0063] Stress simulation tests revealed that, as shown in Figure 5, taking an aluminum nitride heat sink as an example, the stress during eutectic bonding between the aluminum nitride heat sink and the light-emitting chip 106 is relatively high, with the stress primarily distributed at the bonding surface between the two. This stress inhibits the deformation of the light-emitting chip 106. Taking a diamond heat sink as an example, the stress during eutectic bonding between the diamond heat sink and the light-emitting chip 106 is relatively high, with the stress primarily distributed at the bonding surface between the two. This stress inhibits the deformation of the light-emitting chip 106.

[0064] Thermal expansion coefficient mismatch is a common problem encountered during the fabrication of diamond and gallium nitride materials. Due to their different thermal expansion coefficients, temperature fluctuations can lead to different expansion or contraction rates, potentially causing material cracking or failure. This presents a significant challenge in the current application of diamond heat sinks.

[0065] As shown in Figure 6, looking down from above the light-emitting component, the light-emitting chip 106 is located above the heat sink 107, the fast axis direction of the light-emitting chip 106 is parallel to the long side direction of the heat sink 107, and the slow axis direction is parallel to the short side direction of the heat sink 107. The long side length of the heat sink 107 is 1mm to 2.5mm, and the short side length is 0.5mm to 2mm. The long side of the heat sink 107 is larger than the short side.

[0066] As shown in FIG7 , the light emitting chip 106 is a heat source, and the heat generated passes through the layers of the heat sink 107 . The heat sink includes a solder layer 1073 , upper and lower metal layers 1072 , and a substrate layer 1071 in the middle. The overall thickness of the heat sink 107 is 0.2 mm to 0.5 mm.

[0067] Figures 8 and 9 show the stress distribution and maximum stress simulation results for the weld surface of an aluminum nitride heat sink and a diamond heat sink, respectively. Stress is negatively correlated with color depth; lighter colors indicate greater stress. The maximum weld stress for the aluminum nitride heat sink is 0.839 GPa, while the maximum weld stress for the diamond heat sink is 0.981 GPa. While the diamond heat sink has significantly higher thermal conductivity than the aluminum nitride heat sink, the stress significantly increases after welding the light-emitting chip 106, increasing the risk of cracking the light-emitting chip 106.

[0068] In view of this, an embodiment of the present application provides a laser. As shown in FIG10 , the laser includes a tube shell 101 , a light-emitting chip 106 , and a beam adjustment element 108 .

[0069] The housing 101 includes a bottom plate 110 and a side wall 109. One end of the side wall 109 is closed by the bottom plate 110. Thus, the side wall 109 and the bottom plate 110 enclose a housing space. The bottom plate 110 within the housing space is used to support the light-emitting chip 106 and the beam-shaping element 108 when they are packaged.

[0070] The light emitting chip 106 is used to emit an initial light beam. When the initial light beam passes through the light beam adjusting element 108 , the light beam adjusting element 108 can adjust the direction of the initial light beam to adjust the initial transmission direction of the initial light beam to a preset direction.

[0071] It should be noted that Figure 10 only exemplifies that the bottom of the tube shell and the bottom of the base plate are arranged on the same horizontal line. In some embodiments, the bottom of the tube shell can also be arranged on the upper surface of the base plate, which is not limited in this embodiment of the application.

[0072] FIG11 is a schematic diagram of the optical path of a laser provided in an embodiment of the present application. As shown in FIG11 , light emitted by the light-emitting chip 106 is incident on the beam-adjusting element 108, where it is reflected by the beam-adjusting element 108. The reflected light then exits from the light-emitting side of the housing 101, thereby adjusting the transmission direction of the initial light emitted by the light-emitting chip 106 to a predetermined direction. The material for the base plate 110 in the housing 101 can be selected based on the heat dissipation requirements of the light-emitting chip 106 and the thermal expansion coefficient of the light-emitting chip 106. The base plate 110 of the housing 101 can be manufactured so that the thermal conductivity of the base plate 110 meets the heat dissipation requirements of the light-emitting chip 106 and the thermal expansion coefficient of the base plate 110 matches the thermal expansion coefficient of the light-emitting chip 106. When the thermal conductivity of the base plate 110 meets the heat dissipation requirements of the light-emitting chip 106 and the thermal expansion coefficient of the base plate 110 matches the thermal expansion coefficient of the light-emitting chip 106, the light-emitting chip 106 can be fixed to the base plate 110 solely by the connecting material.

[0073] In some embodiments, the connection material may be a gold-tin alloy, and the light-emitting chip 106 may be fixed to one side of the base plate 110 by the gold-tin alloy.

[0074] In some embodiments, the connecting material may also be glue, which may include gold glue or nano silver glue, etc., which is not limited in the embodiments of the present application.

[0075] When the absolute value of the difference between the thermal expansion coefficient of the base plate 110 and the thermal expansion coefficient of the light-emitting chip 106 is less than a difference threshold, the thermal expansion coefficient of the base plate 110 can be considered to match the thermal expansion coefficient of the light-emitting chip 106. The difference threshold is set to ensure that the thermal expansion coefficient of the base plate 110 is close to the thermal expansion coefficient of the light-emitting chip 106, thereby reducing the thermal stress between the light-emitting chip 106 and the base plate 110 when the light-emitting chip 106 dissipates heat.

[0076] In practical applications, the closer the difference between the materials of the base plate and the light-emitting chip is, the better in theory. Generally, the greater the difference in thermal expansion coefficient, the more likely stress problems will occur. Therefore, this application sets the above difference threshold within the range of 0-3×10-6 / K.

[0077] In some embodiments, the base plate 110 can be made of a diamond-silicon carbide composite material. Both diamond and silicon carbide have high thermal conductivity, and making the base plate 110 of the diamond-silicon carbide composite material correspondingly improves the thermal conductivity of the base plate 110. Therefore, the base plate 110 formed of the diamond-silicon carbide composite material can meet the heat dissipation requirements of the light-emitting chip 106.

[0078] Among them, the thermal expansion coefficient of the diamond silicon carbide composite material is the first coefficient, and the thermal expansion coefficient of the light-emitting chip 106 is the second coefficient. By adjusting the ratio between diamond and silicon carbide in the diamond silicon carbide composite material, the thermal expansion coefficient of the diamond silicon carbide composite material can be adjusted accordingly, so that the absolute value of the difference between the first coefficient and the second coefficient is less than the difference threshold.

[0079] For example, the thermal expansion coefficient of diamond is 1.2 to 4.5×10 -6 / K, the thermal expansion coefficient of silicon carbide is 3.98~6.58×10 -6 / K, by adjusting the composite ratio of diamond and silicon carbide to form a diamond silicon carbide composite material, the thermal expansion coefficient of the diamond silicon carbide composite material, i.e., the first coefficient, can be adjusted to, for example, 3 to 6×10-6 / K, while the thermal expansion coefficient of the light emitting chip 106, such as a laser chip, i.e., the second coefficient, is between 4×10-6 / K. -6 / K or so.

[0080] Thus, by adjusting the thermal expansion coefficient of the diamond-silicon carbide composite material, the thermal expansion coefficient of the diamond-silicon carbide composite material is matched to the thermal expansion coefficient of the light-emitting chip, thereby matching the thermal expansion coefficient of the base plate to the thermal expansion coefficient of the light-emitting chip. When the thermal conductivity of the base plate meets the heat dissipation requirements of the light-emitting chip and the thermal expansion coefficient of the base plate matches the thermal expansion coefficient of the light-emitting chip, the light-emitting chip can be fixed to the base plate via the connecting material.

[0081] Compared to the laser shown in Figure 2, the base plate 110 of the housing 101 is typically made of oxygen-free copper. Because the thermal expansion coefficient of oxygen-free copper is much greater than that of the light-emitting chip 106, the thermal expansion coefficients of the base plate 110 and the light-emitting chip 106 do not match. If the light-emitting chip 106 is fixed to the base plate 110, the large difference in the amount of expansion between the base plate 110 and the light-emitting chip 106 when heated will cause a significant difference in the forces applied to each point on the contact surface between the light-emitting chip 106 and the base plate 110, making it impossible to ensure the secure attachment of the light-emitting chip 106 to the base plate 110. Therefore, the light-emitting chip 106 must first be fixed to a heat sink 107, which is then secured to the base plate 110 of the housing 101. The heat sink 107 has a large thermal conductivity, and its thermal expansion coefficient matches that of the light-emitting chip 106. In addition, since oxygen-free copper is conductive, the heat sink 107 can also serve as an insulating layer to prevent electrical contact between the light-emitting chip 106 and the base plate 110 .

[0082] In the embodiment of the present application, the base plate 110 of the housing 101 is constructed of a diamond-silicon carbide composite material. This material utilizes the high thermal conductivity of the diamond-silicon carbide composite material to meet the heat dissipation requirements of the light-emitting chip 106. Furthermore, the thermal expansion coefficient of the diamond-silicon carbide composite material matches that of the light-emitting chip 106, thereby securing the light-emitting chip 106 to the base plate 110. Furthermore, since both diamond and silicon carbide are non-conductive materials, electrical contact between the light-emitting chip and the base plate 110 can be avoided when the light-emitting chip 106 is secured to the base plate 110 formed of the diamond-silicon carbide composite material.

[0083] Therefore, the laser provided in the embodiment of the present application can replace the function of the heat sink by setting the bottom plate of the tube shell to a diamond silicon carbide composite material, without the need to set up an additional heat sink, thereby avoiding the problem that the light-emitting chip has many structural interfaces when being mounted due to the setting of the heat sink, resulting in an extension of the heat dissipation path of the light-emitting chip, and the existence of a large thermal resistance in the heat dissipation path, which is not conducive to the heat dissipation of the light-emitting chip. This is conducive to achieving a miniaturized setting of the laser and improving the heat dissipation efficiency of the light-emitting chip. In addition, since there is no need to set up an additional heat sink, the light-emitting chip, such as the light-emitting chip, can simplify the process when being mounted, which is conducive to reducing the preparation cost.

[0084] In some embodiments, as shown in FIG10 , the bottom plate 110 includes a protruding structure 112 in the accommodating space. The protruding structure 112 is a part of the bottom plate 110 and is an integrally formed structure of the bottom plate 110 .

[0085] The light-emitting chip 106 is fixed to the raised structure 112, and the light-emitting chip 106 partially overlaps the raised structure 112. Because the laser beam emitted by the light-emitting chip 106, such as a laser chip, diverges in a cone shape, the light-emitting surface 113 of the light-emitting chip 106 is positioned away from the raised structure 112 to ensure that the laser beam emitted by the light-emitting chip 106, such as a laser chip, does not strike the base plate 110. This improves the efficiency of the laser beam emitted by the light-emitting chip 106 in striking the beam-adjusting element 108.

[0086] Specifically, the above-mentioned light-emitting chip is a laser chip, and the laser beam emitted by the laser chip has a certain divergence angle, and the divergence angle of the red laser chip is greater than the divergence angle of the green laser chip and the blue laser chip. In order to ensure that the laser beam emitted by the laser chip can be incident on the beam adjustment element and be completely reflected by the beam adjustment element, and to avoid the laser emitted by the laser chip being incident on the bottom plate to cause energy waste, the ratio of the distance L from the protruding structure 112 to the beam adjustment element 108 to the height H1' of the protruding structure 112 can satisfy: L / H is greater than or equal to 1, and / or, L / H is less than or equal to 3.

[0087] Currently, the fast-axis divergence angle of a red laser chip is approximately 35°, and the slow-axis divergence angle is approximately 8°; the fast-axis divergence angle of a blue laser chip and a green laser chip is approximately 25°, and the slow-axis divergence angle is approximately 5°. Therefore, the height of the raised structure 112 can be set to 0.2mm-0.3mm. The distance between the raised structure and the beam-adjusting element can be set to 0.3mm-0.6mm for a red laser chip, and 0.3mm-0.7mm for a green laser chip and a blue laser chip.

[0088] In addition, the light-emitting surface 113 of the light-emitting chip 106 can be located in the gap between the protruding structure 112 and the beam-adjusting element 108, and the distance S between the light-emitting surface 113 and the protruding structure 112 can be greater than or equal to 5 μm, and can also be less than or equal to 10 μm. Setting a certain distance between the light-emitting surface 113 and the protruding structure 112 helps improve the light utilization efficiency of the light-emitting chip 106. Furthermore, setting the distance S between the light-emitting surface 113 and the protruding structure 112 not only improves the light utilization efficiency of the light-emitting chip 106, but also helps achieve a miniaturized laser device.

[0089] Continuing with FIG10 , in a direction perpendicular to the plane of the base plate 110 , when the height of the raised structure 112 is too high, the heat generated by the light-emitting chip 106 located on the raised structure 112 will have a longer heat dissipation path to the outside through the base plate 110, which is not conducive to the heat dissipation of the light-emitting chip 106 ; when the height of the raised structure 112 is too low, the light emitted from the light-emitting surface 113 of the light-emitting chip 106 will be incident on the base plate 110, reducing the light utilization rate of the light-emitting surface 113 .

[0090] Based on this, the height of the raised structure 112 can be reasonably set. Specifically, the height H1' of the raised structure 112 and the height H0 of the beam shaping element 108 can be set to H0 / 4 ≤ H1', ​​or H1' ≤ 3H0 / 8. Thus, by setting the height H1' of the raised structure 112 and the height H0 of the beam shaping element 108 to meet the above conditions, the light utilization efficiency of the light-emitting chip 106 can be improved while ensuring heat dissipation of the light-emitting chip 106.

[0091] Therefore, the raised structure 112 provided in the embodiment of the present application can replace the function of the heat sink, and fix the light-emitting chip 106 on the raised structure 112. The raised structure 112 cooperates with the positional relationship between the light-emitting chip 106 and the beam adjustment element 108 to achieve the light emitted by the light-emitting chip 106 being incident on the beam adjustment element 108, reflected on the beam adjustment element 108, and the reflected light being emitted from the light-emitting side of the tube shell 101, thereby adjusting the transmission direction of the initial light emitted by the light-emitting chip 106 to a preset direction.

[0092] In some embodiments, as shown in FIG. 12 , the protruding structure 112 on the bottom plate 110 is configured as an integrated protruding structure 1121 .

[0093] When the protrusion structure 112 is configured as an integrated protrusion structure 1121, all light-emitting chips 106 on the base plate 110 are fixed to the integrated protrusion structure 1121. It should be noted that FIG12 only exemplarily illustrates one integrated protrusion structure 1121 and five light-emitting chips 106 disposed on the integrated protrusion structure 1121. The specific number of integrated protrusion structures 1121 and light-emitting chips 106 is not limited in this embodiment of the present application.

[0094] Exemplarily, as shown in FIG. 13 , five light-emitting chips 106 are all fixed on the integrated protruding structure 1121 .

[0095] In some embodiments, as shown in FIG14 , the protrusion structure 112 may be provided as a plurality of split protrusion structures 1122 , wherein the plurality of light emitting chips 106 included in the accommodating space are provided in a one-to-one correspondence with the plurality of split protrusion structures 1122 .

[0096] Exemplarily, the base plate 110 includes five split raised structures 1122, and each split raised structure 1122 is provided with a corresponding light-emitting chip 106. It should be noted that FIG14 merely illustrates the exemplary arrangement of five split raised structures 1122 and five light-emitting chips 106 on the base plate 110, and does not constitute a specific limitation on the split raised structures 1122 in the present embodiment.

[0097] In some implementations, as shown in FIG11 , the beam-adjusting element 108 can be configured as a prism 1081, such as a glass prism, fixed to one side of the base plate 110. Specifically, the prism 1081 includes a reflective surface 114, and the light-emitting surface 113 of the light-emitting chip 106 faces the reflective surface 114 of the prism 1081. Thus, the initial light emitted by the light-emitting chip 106 can be incident on the reflective surface 114 of the prism 1081 and reflected by the reflective surface 114 of the prism 1081, thereby adjusting the transmission direction of the initial light emitted by the light-emitting chip 106 to a predetermined direction, which can be the light-emitting side of the housing 101.

[0098] In some embodiments, as shown in FIG15 , the base plate 110 includes a support platform 115 . The side of the support platform facing the light-emitting chip 106 is a reflective surface 1082 , and the light-emitting surface 113 of the light-emitting chip 106 faces the reflective surface 1082 . The support platform and the reflective surface serve as the beam-adjusting element 108 . Thus, the initial light emitted by the light-emitting chip 106 can be incident on the reflective surface 1082 , where it is reflected, thereby adjusting the transmission direction of the initial light emitted by the light-emitting chip 106 to a predetermined direction, which can be the light-emitting side of the tube housing 101 .

[0099] The reflective surface may be a reflective lens fixed on the support platform 115 and facing the side of the light emitting chip 106. The reflective surface may also be a reflective layer or reflective film on the surface of the support platform, which plays a reflective role by being coated on the surface of the support plane.

[0100] It should be noted that, in FIG15 , the support platform 115 and the base plate 110 where the support platform 115 is located are integrally formed, that is, the support platform 115 is a part of the base plate 110 .

[0101] In some embodiments, as shown in FIG. 16 , a supporting platform 115 may be provided separately, and then the supporting platform 115 may be fixed on the base plate 110 .

[0102] The difference between Figure 15 and Figure 16 is that the support platform 115 in Figure 15 is a part of the base plate 110 and is an integral part of the base plate 110; while the support platform 115 in Figure 16 does not belong to the base plate 110, and the support platform 115 needs to be fixed on the base plate 110.

[0103] When the base plate and the raised structure are made of diamond, the stress between the diamond and the light-emitting chip is relatively large, and the light-emitting chip has the risk of cracking.

[0104] In view of this, as shown in Figure 10, a first transition layer 111 is further provided on the protruding structure 112. The first transition layer 111 is located between the protruding structure 112 and the light-emitting chip 106. The elastic modulus of the first transition layer is smaller than the elastic modulus of the diamond substrate, that is, the first transition layer has the characteristics of greater elasticity and easy deformation, and can absorb the stress between the light-emitting chip and the diamond through elastic deformation, thereby reducing the stress between the light-emitting chip and the diamond, effectively reducing the risk of the light-emitting chip breaking, and helping to improve the reliability of the laser.

[0105] In some embodiments, a support structure may be further provided on the base plate for supporting the light-emitting chip. The support structure includes a diamond substrate and a first transition layer. The diamond substrate faces the base plate, and the first transition layer is located on a side of the diamond substrate facing away from the base plate. The elastic modulus of the first transition layer is lower than that of the diamond substrate. Thus, by providing the first transition layer on the side of the diamond substrate facing the light-emitting chip, the elastic modulus of the first transition layer is lower than that of the diamond substrate. In other words, the first transition layer has high elasticity and is easily deformable. It can absorb stress between the light-emitting chip and the diamond substrate through elastic deformation, thereby reducing stress between the light-emitting chip and the diamond substrate, effectively reducing the risk of cracking the light-emitting chip, and thus improving the reliability of the laser.

[0106] Specifically, as shown in Figure 17, the support structure 111 is located on one side of the base plate 110, and the light-emitting chip 106 is located on the side of the support structure 111 away from the base plate 110. The support structure 111 includes: a diamond substrate 1111 and a first transition layer 1112. The diamond substrate 1111 faces the base plate 110, and the first transition layer 1112 is located on the side of the diamond substrate away from the base plate. The elastic modulus of the first transition layer is smaller than the elastic modulus of the diamond substrate.

[0107] The base plate 110 is made of a material with good thermal conductivity. This application does not limit the material of the base plate 110, and any material known to those skilled in the art can be used. For example, oxygen-free copper, red copper, or ceramic materials can be used. Metal materials such as copper, aluminum, iron, nickel, and molybdenum, or ceramic materials such as aluminum nitride and silicon carbide can also be used.

[0108] The support structure 111 has a relatively high thermal conductivity, and can quickly dissipate heat generated by the light-emitting chip 106 , thereby preventing the light-emitting chip 106 from being damaged by the heat.

[0109] The support structure 111 includes a diamond substrate 1111 and a first transition layer 1112. The first transition layer 1112 is located between the light-emitting chip 106 and the diamond substrate 1111, with the diamond substrate 1111 facing the bottom plate 110. The elastic modulus of the first transition layer 1112 is smaller than that of the diamond substrate 1111. That is, under the same stress, the deformation of the first transition layer 1112 is greater than that of the diamond substrate 1111. Compared with the diamond substrate 1111, the first transition layer 1112 has greater elasticity and is easy to deform. When the light-emitting chip 106 is eutectic-welded to the support structure 111, the light-emitting chip 106 is in direct contact with the first transition layer 1112. The stress generated on the welding surface causes the first transition layer 1112 to undergo elastic deformation. The first transition layer 1112 absorbs the stress between the light-emitting chip 106 and the diamond substrate 1111 through elastic deformation, thereby reducing the stress between the light-emitting chip 106 and the diamond substrate 1111, effectively reducing the risk of the light-emitting chip 106 breaking, and helping to improve the reliability of the laser.

[0110] The following points should be noted when selecting the first transition layer 1112:

[0111] (1) The thermal expansion coefficient of the first transition layer is greater than that of the diamond substrate;

[0112] (2) The elastic modulus of the first transition layer is smaller than the elastic modulus of the diamond substrate;

[0113] (3) The thermal conductivity of the first transition layer is lower than that of the diamond substrate.

[0114] Based on the above three points, the preparation material of the first transition layer 1112 can be selected from metal materials such as copper, silver, and aluminum. Considering factors such as cost and heat dissipation, copper is preferably used as the preparation material of the first transition layer 1112.

[0115] Table 1 compares the parameters of various materials. The introduction of the first transition layer 1112 reduces the stress on the light-emitting chip 106 to within the stress range of conventional heat sink soldering, which matches the thermal expansion coefficient of the light-emitting chip 106. Conventional heat sinks typically include aluminum nitride or silicon carbide, thus preventing chip cracking.

[0116] Table 1 Comparison of parameters of various preparation materials

[0117] Figure 18 shows a schematic diagram of the stress distribution on the welding surface of the support structure 111 provided in an embodiment of the present application. Referring to Figure 18 , by adding a first transition layer 1112 between the diamond substrate 1111 and the light-emitting chip 106, the maximum welding stress of the support structure 111 is reduced to 0.851 GPa, which is comparable to the maximum welding stress (0.839 GPa) corresponding to the aluminum nitride heat sink in the related art. This indicates that the first transition layer 1112 effectively reduces the stress between the light-emitting chip 106 and the diamond substrate 1111, reducing the risk of stress-induced cracking of the light-emitting chip 106.

[0118] In some embodiments, the material of the first transition layer 1112 includes copper and / or aluminum.

[0119] Among them, metal copper and aluminum have good thermal conductivity and low elastic modulus, which can not only ensure that the support structure 111 has high heat dissipation efficiency, but also reduce stress.

[0120] Exemplarily, the first transition layer 1112 may be a copper layer, an aluminum layer, a copper-aluminum composite layer, or a copper-aluminum mixed layer.

[0121] In some embodiments, in the first direction, the thickness H1 of the diamond substrate 1111 and the thickness of the first transition layer 1112 satisfy: H2 / H1 is greater than or equal to 0.02, and / or H2 / H1 is less than or equal to 0.5.

[0122] In some embodiments, as shown in FIG. 19 , in the first direction X, the thickness H2 of the first transition layer 1112 is greater than or equal to 50 μm, and / or the thickness H2 of the first transition layer 1112 is less than or equal to 75 μm.

[0123] The first direction X is perpendicular to the plane of the bottom plate 110. The thickness H2 of the first transition layer 1112 can be greater than or equal to 50 μm, that is, H2 ≥ 50 μm; the thickness H2 of the first transition layer 1112 can also be less than or equal to 75 μm, that is, H2 ≤ 75 μm; the thickness H2 of the first transition layer 1112 can also simultaneously meet the following requirements: greater than or equal to 50 μm and less than or equal to 75 μm, that is, 50 μm ≤ H2 ≤ 75 μm.

[0124] When the overall thickness of the support structure 111 remains unchanged, the greater the thickness H2 of the first transition layer 1112 and the smaller the thickness H1 of the diamond substrate 1111, the smaller the welding stress between the support structure 111 and the light-emitting chip 106. However, since the thermal conductivity of the first transition layer 1112 is lower than that of the diamond substrate 1111, the overall thermal conductivity of the support structure 111 will also decrease. Therefore, it is necessary to balance the relationship between the thickness H1 of the diamond substrate 1111 and the thickness H2 of the first transition layer 1112. Under the premise that the thickness H2 of the first transition layer 1112 can ensure that there is no risk of cracking the light-emitting chip 106, the overall thermal conductivity of the support structure 111 should be maximized, that is, the thickness H2 of the first transition layer 1112 should be minimized.

[0125] For example, as shown in Figures 20 to 22, when the thickness H2 of the first transition layer 1112 is equal to 0 μm, that is, the support structure 111 only includes the diamond substrate 1111, the maximum temperature of the light-emitting chip 106 is 29°C; when the thickness H2 of the first transition layer 1112 is equal to 50 μm, that is, the support structure 111 includes the diamond substrate 1111 and the first transition layer 1112, the increase of the first transition layer 1112 causes the thermal conductivity of the support structure 111 to decrease, the heat dissipation effect to deteriorate, and the maximum temperature of the light-emitting chip 106 is 30.2°C; when the thickness H2 of the first transition layer 1112 is equal to 75 μm, that is, the support structure 111 includes the diamond substrate 1111 and the first transition layer 1112, the thickness H2 of the first transition layer 1112 increases, resulting in a further decrease in the thermal conductivity of the support structure 111, the heat dissipation effect to become worse, and the maximum temperature of the light-emitting chip 106 is 30.8°C. Although the maximum temperature of the light emitting chip 106 increases when the thickness H2 of the first transition layer 1112 is equal to 50 μm and 75 μm, it is still within the normal operating temperature range of the light emitting chip 106 .

[0126] It should be noted that in Figures 20 to 22, the depth of the filling color is negatively correlated with the temperature. The lighter the color, the higher the temperature at the corresponding position.

[0127] In some embodiments, as shown in FIG. 19 , in the first direction X, the thickness H1 of the diamond substrate 1111 is greater than or equal to 150 μm, and / or the thickness H1 of the diamond substrate 1111 is less than or equal to 250 μm.

[0128] The thickness H1 of the diamond substrate 1111 can be greater than or equal to 150μm, that is, H1≥150μm; the thickness H1 of the diamond substrate 1111 can also be less than or equal to 250μm, that is, H1≤250μm; the thickness H1 of the diamond substrate 1111 can also simultaneously meet the following conditions: greater than or equal to 150μm and less than or equal to 250μm, that is, 150μm≤H1≤250μm.

[0129] According to actual usage requirements, the overall thickness of the support structure 111 is about 300 μm. On this basis, considering the growth process of the diamond substrate 1111 in the thickness direction and the thermal conductivity of the support structure 111, the thickness H1 of the diamond substrate 1111 needs to be greater than or equal to 150 μm.

[0130] Since the overall thickness of the support structure 111 is approximately 300 μm and the thickness H2 of the first transition layer 1112 is greater than or equal to 50 μm, the thickness H1 of the diamond substrate 1111 needs to be less than or equal to 250 μm.

[0131] In some embodiments, as shown in any one of FIG. 23 to FIG. 29 , the support structure 111 further includes: a first solder resist layer 1113 and a first conductive layer 1114 .

[0132] The first conductive layer 1114 is located on a side of the first transition layer 1112 facing away from the diamond substrate 1111, and the first conductive layer 1114 is electrically connected to the light-emitting chip 106. For example, an external power source may be electrically connected to the first conductive layer 1114 via a wire, thereby electrically connecting the light-emitting chip 106 to the external power source via the first conductive layer 1114 and the wire.

[0133] The first solder resist layer 1113 is located between the first conductive layer 1114 and the first transition layer 1112. The first solder resist layer 1113 reacts neither with the first transition layer 1112 nor with the first conductive layer 1114. It is used to prevent ions in the first conductive layer 1114 from diffusing into the first transition layer 1112, and further prevent ions from diffusing into the diamond substrate 1111, thereby avoiding affecting the characteristics of the diamond substrate 1111.

[0134] In some embodiments, the material of the first conductive layer 1114 includes gold and / or silver.

[0135] Gold and silver have excellent electrical conductivity. Using gold and / or silver to prepare the first conductive layer 1114 can improve electrical conductivity and signal transmission capabilities. The present application may also use other metals besides gold and silver to prepare the first conductive layer 1114, which is not limited here.

[0136] Exemplarily, the first conductive layer 1114 may be a gold layer, a silver layer, a gold-silver composite layer, or a gold-silver mixed layer.

[0137] In some embodiments, the material of the first solder resist layer 1113 includes at least one of nickel, copper, gold, platinum, palladium, and titanium.

[0138] Nickel has good corrosion resistance and wear resistance. Using nickel to prepare the first solder resist layer 1113 can also improve the corrosion resistance and wear resistance of the support structure 111.

[0139] Illustratively, the first conductive layer 1114 includes at least one of a nickel layer, a copper layer, a gold layer, a platinum layer, a palladium layer, and a titanium layer.

[0140] In some embodiments, as shown in any of Figures 24 to 25 and Figures 27 to 29 , the support structure 111 further includes: a solder layer 1115 ; the solder layer 1115 is on the side of the first conductive layer 1114 away from the first solder resist layer 1113 , and the light-emitting chip 106 is electrically connected to the first conductive layer 1114 through the solder layer 1115 .

[0141] The solder layer 1115 is used for soldering the light emitting chip 106. The material of the solder layer 1115 includes solder.

[0142] In some embodiments, as shown in FIG. 25 , in the first direction X, the thickness H3 of the first solder resist layer 1113 is greater than or equal to 2 μm, and / or the thickness H3 of the first solder resist layer 1113 is less than or equal to 5 μm.

[0143] The solder resistance effect of the first solder resist layer 1113 is positively correlated with its thickness H3. The greater the thickness H3 of the first solder resist layer 1113, the better the solder resistance effect. Therefore, the thickness H3 of the first solder resist layer 1113 is controlled to be greater than or equal to 2 μm to meet the solder resistance effect requirements. However, since the thermal conductivity of the first solder resist layer 1113 is lower than that of the diamond substrate 1111, as the thickness H3 of the first solder resist layer 1113 increases, the heat dissipation effect of the support structure 111 deteriorates. Therefore, the thickness H3 of the first solder resist layer 1113 needs to be controlled to be less than or equal to 5 μm.

[0144] The thickness H3 of the first solder resist layer 1113 may be greater than or equal to 2 μm, that is, H3 ≥ 2 μm; the thickness H3 of the first solder resist layer 1113 may also be less than or equal to 5 μm, that is, H3 ≤ 5 μm; the thickness H3 of the first solder resist layer 1113 may also simultaneously satisfy: greater than or equal to 2 μm and less than or equal to 5 μm, that is, 2 μm ≤ H3 ≤ 5 μm.

[0145] In some embodiments, as shown in FIG. 25 , in the first direction X, the thickness H4 of the first conductive layer 1114 is greater than or equal to 0.5 μm, and / or the thickness H4 of the first conductive layer 1114 is less than or equal to 2 μm.

[0146] The conductivity of the first conductive layer 1114 is positively correlated with its thickness H4. The greater the thickness H4 of the first conductive layer 1114, the better the conductivity. Therefore, the thickness H4 of the first conductive layer 1114 is controlled to be greater than or equal to 0.5 μm to meet the required conductivity. However, since the thermal conductivity of the first conductive layer 1114 is lower than that of the diamond substrate 1111, the heat dissipation effect of the support structure 111 deteriorates as the thickness H4 of the first conductive layer 1114 increases. Therefore, the thickness H4 of the first conductive layer 1114 is controlled to be less than or equal to 2 μm.

[0147] The thickness H4 of the first conductive layer 1114 may be greater than or equal to 0.5 μm, that is, H4 ≥ 0.5 μm; the thickness H4 of the first conductive layer 1114 may also be less than or equal to 2 μm, that is, H4 ≤ 2 μm; the thickness H4 of the first conductive layer 1114 may also simultaneously satisfy: greater than or equal to 0.5 μm and less than or equal to 2 μm, that is, 0.5 μm ≤ H4 ≤ 2 μm.

[0148] In some embodiments, as shown in FIG. 25 , in the first direction X, the thickness H5 of the solder layer 1115 is greater than or equal to 2 μm, and / or the thickness H5 of the solder layer 1115 is less than or equal to 5 μm.

[0149] The soldering performance of solder layer 1115 is positively correlated with its thickness H5. The greater the thickness H5 of solder layer 1115, the better the soldering performance. Therefore, the thickness H5 of solder layer 1115 is controlled to be greater than or equal to 2 μm to meet soldering performance requirements. However, since the thermal conductivity of solder layer 1115 is lower than that of diamond substrate 1111, the heat dissipation performance of support structure 111 deteriorates as the thickness H5 of solder layer 1115 increases. Therefore, the thickness H5 of solder layer 1115 must be controlled to be less than or equal to 5 μm.

[0150] The thickness H5 of the solder layer 1115 can be greater than or equal to 2μm, that is, H5≥2μm; the thickness H5 of the solder layer 1115 can also be less than or equal to 5μm, that is, H5≤5μm; the thickness H5 of the solder layer 1115 can also simultaneously meet the following conditions: greater than or equal to 2μm and less than or equal to 5μm, that is, 2μm≤H5≤5μm.

[0151] It should be noted that the thicknesses of the first solder resist layer 1113 , the first conductive layer 1114 and the solder layer 1115 are relatively small, and the function of the first solder resist layer 1113 , the first conductive layer 1114 and the solder layer 1115 is not heat dissipation, and changes in their thickness ranges have almost no effect on the overall thermal conductivity of the support structure 111 .

[0152] In some embodiments, as shown in FIG. 26 , 27 or 29 , on the side of the diamond substrate 1111 facing away from the light emitting chip 106 , the support structure 111 further includes at least one of a second transition layer 1116 , a second solder resist layer 1117 and a second conductive layer 1118 .

[0153] Among them, along the first direction X, a first transition layer 1112 is set above the diamond substrate 1111, and a second transition layer 1116 is set below the diamond substrate 1111, that is, the upper and lower surfaces of the diamond substrate 1111 are covered with transition layers. The transition layers have good thermal conductivity and can provide better heat dissipation performance.

[0154] Along the first direction X, the upper and lower surfaces of the diamond substrate 1111 are covered with a conductive layer, which can provide better conductive performance and signal transmission capability.

[0155] The second transition layer 1116 , the second solder resist layer 1117 and the second conductive layer 1118 are all metal layers. Along the first direction X, the upper and lower surfaces of the diamond substrate 1111 are covered with metal layers, which increases the structural stability of the support structure 111 and makes it more durable.

[0156] Exemplarily, as shown in Figure 27, the laser includes a light-emitting chip 106 and a support structure 111. Along the direction away from the light-emitting chip 106, the support structure 111 includes a solder layer 1115, a first conductive layer 1114, a first solder resist layer 1113, a first transition layer 1112, a diamond substrate 1111, a second transition layer 1116, a second solder resist layer 1117, and a second conductive layer 1118 stacked in sequence.

[0157] It should be noted that the materials of the first transition layer 1112 and the second transition layer 1116 may be the same or different, and their thicknesses may be equal or different; the materials of the first solder resist layer 1113 and the second solder resist layer 1117 may be the same or different, and their thicknesses may be equal or different; the materials of the first conductive layer 1114 and the second conductive layer 1118 may be the same or different, and their thicknesses may be equal or different, which is not limited here.

[0158] This application also starts from the fact that the stress alleviation effect of the support structure 111 depends on the relationship between the thickness of the diamond substrate 1111 and the transition layer, and from the perspective of alleviating the maximum stress on the high-temperature eutectic soldered chip, studies the most suitable thickness of the transition layer under a fixed heat sink thickness and the most suitable thickness range of the support structure 111.

[0159] Since the solder layer and the metallization layer (including the first solder resist layer 1113 and the first conductive layer 1114) are relatively thin, they are not considered for the time being. The thickness of the support structure 111 depends on the diamond substrate 1111 and the transition layer. The transition layer includes the first transition layer 1112 and the second transition layer 1116. The thickness of the diamond substrate is represented by E, the thickness of the transition layer is represented by e, and the thickness of the support structure can be expressed as E+2e.

[0160] The thickness and coefficient of the support structure are defined as N, where N = 2e + E. The maximum stress borne by the light-emitting chip 106 is determined by the thickness of the support structure and the coefficient N. When the thickness E of the diamond substrate is 200 μm, 300 μm, and 400 μm, respectively, the thickness 2e of the transition layer is 100 μm, 150 μm, 200 μm, 300 μm, and 400 μm, respectively. The maximum stress borne by the light-emitting chip 106 varies with the thickness and coefficient N, as the thickness of the corresponding support structure 111 changes. The following uses copper as an example:

[0161] Table 2 Relationship between thickness and coefficient N of different support structures and stress values

[0162] For support structures of varying thicknesses and moduli, with the conventional heat sink welding stress value of 0.85 GPa as the upper limit, Figure 30 shows that for support structure thicknesses and moduli N ranging from 300 μm to 800 μm, the eutectic welding stress value should be controlled below this upper limit to avoid cracking. Diamond substrates meeting this condition have a thickness range of 200 μm to 400 μm. Based on the existing optical path design, the preferred thickness of support structure 111 is 300 μm.

[0163] The thickness entropy coefficient M is defined as M = 2e / E. The maximum stress borne by the light-emitting chip 106 is determined by the thickness entropy coefficient M. With the thickness of the heat sink fixed, the thickness of the transition layer 2e is changed to 0 μm, 50 μm, 100 μm, 150 μm, 200 μm, and 300 μm. The thickness E of the diamond substrate is changed accordingly. The maximum stress value borne by the light-emitting chip is obtained as the thickness entropy coefficient M changes.

[0164] Table 3 Relationship between the thickness entropy coefficient M and stress value of the support structure

[0165] When the thickness of support structure 111 is fixed at 300μm, with the maximum stress of 0.85GPa for conventional heat sink soldering as the upper limit, Figure 31 shows that the thickness entropy coefficient M is between 0.2 and 300 / 0, and the eutectic soldering stress can be controlled below this upper limit to avoid cracking. Materials that meet this condition include silver, copper, and aluminum; silver is relatively expensive, while aluminum has a relatively large thermal expansion coefficient and a thermal conductivity only half that of copper and silver. Therefore, copper is preferred. The results in Table 3 show that the optimal copper layer thickness is approximately 50μm, and the stress value is minimized when the corresponding diamond substrate thickness is 250μm.

[0166] In some embodiments, as shown in FIGS. 28 to 29 , the support structure 111 further includes a bonding layer 1119 ; the bonding layer 1119 is located between the first transition layer 1112 and the diamond substrate 1111 .

[0167] Among them, since the diamond substrate 1111 has a large surface roughness, in order to increase the adhesion between the first transition layer 1112 and the diamond substrate 1111, before preparing the first transition layer 1112 or the second transition layer 1116, the upper and lower surfaces of the diamond substrate 1111 can be polished using a grinding and polishing machine to make its surface reach a certain roughness, and then ultrasonically cleaned and placed in a magnetron sputtering device to sputter the first transition layer 1112 and / or the second transition layer 1116.

[0168] In some embodiments, a bonding layer 1119 may be sputtered on the upper surface of the diamond substrate 1111 first, and then the first transition layer 1112 may be sputtered to further increase the adhesion between the first transition layer 1112 and the diamond substrate 1111 .

[0169] In some embodiments, the material of bonding layer 1119 includes titanium or titanium copper.

[0170] For example, the bonding layer 1119 includes a titanium layer or a titanium-copper mixed layer.

[0171] In some embodiments, in the first direction X, the thickness H6 of the bonding layer 1119 is greater than or equal to 0.1 μm, and / or the thickness H6 of the bonding layer 1119 is less than or equal to 0.5 μm.

[0172] The purpose of providing the bonding layer 1119 is to increase the adhesion between the first transition layer 1112 and the diamond substrate 1111. The bonding layer 1119 needs to completely cover the diamond substrate 1111. Therefore, the thickness H6 of the bonding layer 1119 is controlled to be greater than or equal to 0.1 μm. A larger thickness H6 of the bonding layer 1119 improves adhesion, but at the expense of increased cost. Therefore, while still meeting adhesion requirements, the thickness H6 of the bonding layer 1119 is minimized, and is therefore controlled to be less than or equal to 0.5 μm.

[0173] The thickness H6 of the bonding layer 1119 can be greater than or equal to 0.1μm, that is, H6≥0.1μm; the thickness H6 of the bonding layer 1119 can also be less than or equal to 0.5μm, that is, H6≤0.5μm; the thickness H6 of the bonding layer 1119 can also simultaneously meet the following requirements: greater than or equal to 0.4μm and less than or equal to 0.5μm, that is, 0.1μm≤H6≤0.5μm.

[0174] In some embodiments, as shown in FIG. 29 , a bonding layer 1119 is also provided between the second transition layer 1116 and the diamond substrate 1111 to increase the adhesion between the second transition layer 1116 and the diamond substrate 1111 .

[0175] In some embodiments, when the base plate includes a protruding structure, one or more layers of the above-mentioned first solder resist layer, first conductive layer, solder layer, and bonding layer may also be provided on the protruding structure. The setting positions, functions, and materials of these film layers can be referred to the above embodiments and will not be elaborated here.

[0176] In some embodiments, as shown in any of Figures 32 to 35, a sealing structure 116 is provided on the light-emitting side of the tube shell 101, thereby forming a sealed space inside the tube shell 101. Exemplarily, the sealing structure 116 may be a light-transmitting sealing plate, so that the light inside the tube shell 101 can be emitted through the light-transmitting sealing plate. Particularly, a supporting structure 111 may be provided at the bottom edge of the light-transmitting sealing plate to seal the light-transmitting sealing plate to the tube shell 101. The material of the light-transmitting sealing plate is selected from a material whose thermal expansion coefficient matches the thermal expansion coefficient of the tube shell 101, such as sapphire or quartz. Such a setting is conducive to achieving the connection between the light-transmitting sealing plate and the tube shell 101 and reducing cracks caused by stress.

[0177] In some embodiments, as shown in FIG. 36 , the laser further includes a first pin 116 and a second pin 117 , and the first pin 116 and the second pin 117 are fixed to the side wall 109 of the tube shell 101 .

[0178] Among them, one end of the first pin 116 is located outside the tube shell 101 for connecting to the positive pole of the power supply, and the other end of the first pin 116 extends into the accommodating space and is electrically connected to a light-emitting chip 106; one end of the second pin 117 is located outside the tube shell 101 for connecting to the negative pole of the power supply, and the other end of the second pin 117 extends into the accommodating space and is electrically connected to a light-emitting chip 106.

[0179] For example, as shown in FIG36 , four light-emitting chips 106 are provided, namely, a first light-emitting chip 01, a second light-emitting chip 02, a third light-emitting chip 03, and a fourth light-emitting chip 04. Specifically, the positive electrode of the first light-emitting chip 01 is electrically connected to the first pin 116 via a gold wire, the negative electrode of the first light-emitting chip 106 is connected to the positive electrode of the second light-emitting chip 02 via a gold-tin trace, the negative electrode of the second light-emitting chip 02 is connected to the positive electrode of the third light-emitting chip 03 via a gold-tin trace, the negative electrode of the second light-emitting chip 02 is connected to the positive electrode of the fourth light-emitting chip 04 via a gold-tin trace, and the negative electrode of the fourth light-emitting chip 04 is connected to the second pin 117 via a gold-tin trace, thereby achieving that each light-emitting chip 106 is connected in series between the positive and negative electrodes of the power supply, to ensure that each light-emitting chip 106 of the laser, for example, a light-emitting chip, works when powered on.

[0180] It should be noted that since the spacing between the light-emitting chips 106 in FIG36 is small, it is difficult to arrange the wiring between adjacent light-emitting chips 106. Based on this, as shown in FIG37 , the laser further includes multiple conductive structures 017.

[0181] The conductive structure 017 can be a pad, which is arranged in one-to-one correspondence with the light-emitting chip 106, and the conductive structure 017 is arranged on the side wall 109. The conductive structure 017 is used to connect each light-emitting chip 106 in series between the positive and negative poles of the power supply.

[0182] Exemplarily, as shown in FIG37 , four light-emitting chips 106 are provided, namely a first light-emitting chip 01, a second light-emitting chip 02, a third light-emitting chip 03 and a fourth light-emitting chip 04, and a first conductive structure 171, a second conductive structure 172, a third conductive structure 173 and a fourth conductive structure 174 are provided corresponding to the four light-emitting chips 106.

[0183] Specifically, the positive electrode of the first light-emitting chip 01 is electrically connected to the positive electrode of the power supply via the first pin 116, and the first conductive structure 171 is electrically connected to the negative electrode of the first light-emitting chip 01 via, for example, gold-tin. The positive electrode of the second light-emitting chip 02 is electrically connected to the first conductive structure 171, and the negative electrode of the second light-emitting chip 02 is electrically connected to the second conductive structure 172. The positive electrode of the third light-emitting chip 03 is electrically connected to the second conductive structure 172, and the negative electrode of the third light-emitting chip 03 is electrically connected to the third conductive structure 173. The positive electrode of the fourth light-emitting chip 04 is electrically connected to the third conductive structure 173, and the negative electrode of the fourth light-emitting chip 04 is electrically connected to the fourth conductive structure 174, and the fourth conductive structure 174 is electrically connected to the negative electrode of the power supply via the second pin 117. Thus, each light-emitting chip 106, for example, a light-emitting chip, can be connected in series between the positive and negative electrodes of the power supply to ensure that each light-emitting chip 106, for example, a light-emitting chip of the laser operates when powered on.

[0184] In some embodiments, as shown in FIG38 , the laser further includes a circuit board 118 , and the housing 101 is fixed on the circuit board 118 . The circuit board 118 is used to supply power to the light emitting chip 106 .

[0185] In some embodiments, as shown in FIG39 , the laser further includes a collimating structure 19. The collimating structure 19 is located on the light-emitting side of the sealing structure 116 and is used to collimate the emitted light. For example, the collimating structure 19 is configured as a collimating lens or other specific optical element well known to those skilled in the art to collimate the emitted light, and this embodiment of the present application is not limited thereto.

[0186] In some embodiments, the material forming the sidewalls is the same as the material forming the bottom plate, thereby enabling the bottom plate and the sidewalls to be integrally formed to form the tube shell.

[0187] 40 or 41 , the bottom plate 110 and the sidewall 109 are integrally formed to form the tube shell 101. For example, when the material of the bottom plate 110 is set to be a diamond silicon carbide composite material, the material of the sidewall 109 can also be a diamond silicon carbide composite material, and the diamond silicon carbide composite material is an insulating material. In this way, when the material of the sidewall 109 is the same as that of the bottom plate 110, the bottom plate 110 and the sidewall 109 can be integrally formed to form the tube shell 101.

[0188] It should be noted that in the lasers shown in Figures 10 to 12, 15 to 16, and 32 to 39, the material of the bottom plate 110 is different from the material of the sidewall 109, and the bottom plate 110 and the sidewall 109 are not integrally formed. For example, the material forming the bottom plate 110 is set to be a diamond silicon carbide composite material, and the material forming the sidewall 109 is set to be a ceramic material.

[0189] Based on the same inventive concept, the present application also provides a laser projection device. As shown in FIG42 , the laser projection device includes the laser 100 described in the above embodiment, and thus has the same or similar beneficial effects, which will not be described in detail here.

[0190] Continuing with FIG42 , the laser projection device further includes a light valve modulation component 200 and a projection lens 300. The light valve modulation component 200 is located on the light-emitting side of the laser 100 and is used to modulate and reflect incident light. The projection lens 300 is located on the reflected light path of the light valve modulation component 200 and is used to form an image of the light emitted from the light valve modulation component 200.

[0191] The light valve modulation component 200 modulates and reflects incident light from the light source. This component can utilize a digital micromirror device (DMD). The DMD surface includes thousands of tiny mirrors, each of which can be individually driven to rotate. By controlling the DMD's deflection angle, the reflected light is directed toward the projection lens 300.

[0192] The projection lens 300 is used to form an image of the output light of the light valve modulation component 200 , and the image formed by the projection lens 300 is used for projection imaging.

[0193] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A laser comprising: a tube shell, wherein the tube shell forms an accommodating space; A support structure located inside the tube shell; and a light-emitting chip, located on the supporting structure; The support structure includes: a diamond substrate and a first transition layer, wherein the first transition layer is located between the light-emitting chip and the diamond substrate, and the elastic modulus of the first transition layer is smaller than the elastic modulus of the diamond substrate.

2. The laser according to claim 1, wherein The material of the first transition layer includes copper and / or aluminum.

3. The laser according to claim 1, wherein In the first direction, the thickness H1 of the diamond substrate and the thickness H2 of the first transition layer satisfy: H2 / H1 is greater than or equal to 0.02, and / or H2 / H1 is less than or equal to 0.5; The first direction is perpendicular to the plane where the bottom plate of the tube shell is located.

4. The laser according to claim 3, wherein In the first direction, the thickness H1 of the diamond substrate is greater than or equal to 150 μm, and / or the thickness H1 of the diamond substrate is less than or equal to 250 μm; In the first direction, the thickness H2 of the first transition layer is greater than or equal to 50 μm, and / or the thickness H2 of the first transition layer is less than or equal to 75 μm.

5. The laser according to any one of claims 1 to 4, wherein The support structure further comprises: a first solder resist layer and a first conductive layer; the first conductive layer is located on a side of the first transition layer away from the diamond substrate and is electrically connected to the light-emitting chip; the first solder resist layer is located between the first conductive layer and the first transition layer.

6. The laser according to claim 5, wherein The material of the first conductive layer includes gold and / or silver; The material of the first solder resist layer includes at least one of nickel, copper, gold, platinum, palladium and titanium.

7. The laser according to claim 5, wherein On a side of the diamond substrate facing away from the light-emitting chip, the support structure further includes at least one of a second transition layer, a second solder resist layer, and a second conductive layer.

8. The laser according to claim 5, wherein The support structure further comprises: Solder layer; the solder layer is located on a side of the first conductive layer away from the solder resist layer, and the light-emitting chip is electrically connected to the first conductive layer through the solder layer.

9. The laser according to claim 8, wherein In the first direction, the thickness H3 of the first solder resist layer is greater than or equal to 2 μm, and / or the thickness H3 of the first solder resist layer is less than or equal to 5 μm; In the first direction, the thickness H4 of the first conductive layer is greater than or equal to 0.5 μm, and / or the thickness H4 of the first conductive layer is less than or equal to 2 μm; The thickness H5 of the solder layer is greater than or equal to 2 μm, and / or the thickness H5 of the solder layer is less than or equal to 5 μm; The first direction is perpendicular to the plane where the bottom plate of the tube shell is located.

10. The laser according to any one of claims 1 to 9, wherein The support structure further comprises: Bonding layer; the bonding layer is located between the first transition layer and the diamond substrate.

11. The laser according to claim 10, wherein The material of the bonding layer includes titanium or titanium copper.

12. A laser comprising: A tube shell, the tube shell comprising a bottom plate and a side wall, wherein an opening at one end of the side wall is closed by the bottom plate to form an accommodating space; and A light-emitting chip is located in the accommodating space; the light-emitting chip is used to emit initial light; Wherein, the base plate includes a protruding structure in the accommodating space, and the light-emitting chip is located on the protruding structure.

13. The laser of claim 12, further comprising: A beam adjusting element is located in the accommodating space; the beam adjusting element is used to adjust the transmission direction of the initial light to a preset direction; Wherein, in the first direction, the height H1' of the protruding structure and the height H0 of the beam adjusting element satisfy: H0 / 4≤H1', and / or H1'≤3H0 / 8; the first direction is perpendicular to the plane where the base plate is located.

14. The laser according to claim 13, wherein A ratio of a distance L between the protruding structure and the beam adjusting element and a height H1 ′ of the protruding structure satisfies: 1≤L / H, and / or L / H≤3.

15. The laser according to claim 14, wherein The light emitting chip includes a light emitting surface, and a distance S between the light emitting surface and the protruding structure satisfies: 5 μm≤S, and / or S≤10 μm.

16. The laser according to any one of claims 12 to 15, wherein: The protrusion structure is configured as an integrated protrusion structure, and all the light-emitting chips in the accommodating space are fixed to the integrated protrusion structure.

17. The laser according to any one of claims 12 to 15, wherein: The protrusion structure is configured as a plurality of split protrusion structures, the accommodating space includes a plurality of the light-emitting chips, and the plurality of light-emitting chips are configured correspondingly to the plurality of split protrusion structures.

18. The laser according to any one of claims 13 to 17, wherein: The beam adjustment element includes a prism; the prism is fixed on one side of the base plate, and the light-emitting surface of the light-emitting chip faces the reflective surface of the prism.

19. The laser according to any one of claims 13 to 17, wherein The bottom plate includes a supporting platform in the accommodating space, and a reflective surface is provided on a side of the supporting platform facing the light-emitting chip; The supporting platform serves as the beam adjusting element.

20. The laser according to any one of claims 12 to 19, wherein The material of the base plate includes a diamond silicon carbide composite material; The thermal expansion coefficient of the diamond silicon carbide is a first coefficient, and the thermal expansion coefficient of the light-emitting chip is a second coefficient; and an absolute value of a difference between the first coefficient and the second coefficient is less than a difference threshold.

21. The laser according to claim 20, wherein The difference threshold is 0-3×10 -6 / K.

22. The laser of claim 20, wherein A first transition layer is provided on the protruding structure, and the first transition layer is located between the light-emitting chip and the protruding structure; and the elastic modulus of the first transition layer is smaller than the elastic modulus of the bottom plate.

23. The laser of claim 22, wherein The material of the first transition layer includes copper and / or aluminum.

24. The laser according to claim 22 or 23, wherein A first solder resist layer and a first conductive layer are further provided on the protruding structure; the first solder resist layer is located between the first conductive layer and the first transition layer; The material of the first conductive layer includes gold and / or silver; the material of the first solder resist layer includes at least one of nickel, copper, gold, platinum, palladium and titanium.

25. The laser according to any one of claims 22 to 24, wherein A solder layer is further provided on the protruding structure; the solder layer is located on a side of the first conductive layer away from the first solder resist layer, and the light-emitting chip is electrically connected to the first conductive layer through the solder layer.

26. The laser according to any one of claims 22 to 25, wherein A bonding layer is further provided on the protruding structure; the bonding layer is located between the first transition layer and the protruding structure; The material of the bonding layer includes titanium or titanium copper.

27. A laser projection device comprising: The laser according to any one of claims 1 to 11; or, a laser according to any one of claims 12 to 26; A light valve modulation component, located at the light output side of the laser, configured to modulate the incident light and then reflect it; A projection lens is located on the reflected light path of the light valve modulation component and is used to form an image of the output light of the light valve modulation component.

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