Semiconductor sensor and method for manufacturing same

Abstract

This semiconductor sensor (100) comprises: a semiconductor detection element (3); a detection chamber (7) to the inside of which the semiconductor detection element (3) is fixed; a signal terminal (11) that has one end side exposed to the inside of the detection chamber (7) and the other end side exposed to the outside from the detection chamber (7) and outputs an electric signal output from the semiconductor detection element (3) to the outside; a wire (10) that connects the semiconductor detection element (3) and a signal terminal exposure part (11a) that is a part on the one end side of the signal terminal (11) exposed to the inside of the detection chamber (7); and a protective film that continuously covers the semiconductor detection element (3), the wire (10), and the signal terminal exposure part (11a). The protective film is an inorganic barrier film (19).

Description

Semiconductor sensor and its manufacturing method

[0001] The present disclosure relates to semiconductor sensors and methods for manufacturing the same.

[0002] Semiconductor sensors have traditionally been used in automobiles and other mobility systems to control their power source systems. A semiconductor sensor has a semiconductor detection element installed in a detection chamber, which is exposed to the medium to be measured introduced into the detection chamber. The physical quantity detected by the semiconductor detection element is converted into an electrical signal, which is then transmitted via a wire to a signal terminal partially exposed inside the detection chamber and output to the outside via the signal terminal. By appropriately selecting the semiconductor detection element depending on the physical quantity to be measured, various physical quantities such as temperature and pressure can be measured.

[0003] Conventionally, the driving source for such mobility has basically been an internal combustion engine. Semiconductor pressure sensors are attached to the intake system and exhaust system of an internal combustion engine, for example. Semiconductor pressure sensors are used in the intake system at approximately 10 to 300 kPa, whereas in the exhaust system they are used at approximately 300 to 600 kPa. In particular, the exhaust system has a higher pressure range than the intake system, and the measurement medium contains corrosive substances such as water, nitrogen oxides, and sulfur oxides. Therefore, these corrosive substances are more likely to penetrate the semiconductor pressure sensor, and therefore semiconductor pressure sensors are required to have even higher chemical resistance and corrosion resistance.

[0004] Therefore, a semiconductor pressure sensor configuration with improved chemical resistance and corrosion resistance has been disclosed so that it can be used in such harsh applications (see, for example, Patent Document 1). In the configuration disclosed in Patent Document 1, the semiconductor detection element, the exposed portion of the signal terminal, and conductive members such as wires are covered with a polymer protective film made of a fluorine-containing polyparaxylylene-based polymer that has high chemical resistance and corrosion resistance.

[0005] Patent No. 5884921

[0006] By coating conductive members such as semiconductor detection elements, exposed signal terminals, and wires with a polyparaxylylene-based polymer, the semiconductor detection elements, exposed signal terminals, and wires can be protected from corrosive substances, thereby preventing corrosion. However, through various durability tests and subsequent disassembly investigations, the author found that the semiconductor pressure sensor disclosed in Patent Document 1 has weak parts in the protective film, and the coverage of the protective film is insufficient, posing serious problems to the reliability of the semiconductor pressure sensor. Two problems are explained below.

[0007] First, let us explain the first problem. The semiconductor pressure sensor disclosed in Patent Document 1, which uses a semiconductor pressure detection element as the detection element, has fragile portions where a sufficiently thick and high-quality protective film cannot be formed, such as in structures with high aspect ratios, such as narrow and deep grooves, and in overhanging portions of balls at the base of wires. The existence of fragile portions is essentially due to the fact that the protective film is formed by chemical vapor deposition (CVD). CVD forms a relatively more conformal film compared to physical vapor deposition (PVD), such as vacuum deposition or sputtering. Nevertheless, even CVD cannot, in principle, form a sufficient film in the above-mentioned portions.

[0008] In fact, when semiconductor pressure sensors were disassembled and cross-sectional observations were performed immediately after the protective film was formed and after all manufacturing processes were completed, the presence of various types of fragile portions was confirmed. The most typical example is a fragile portion in which protective films grown on both sides meet at the center but do not fully fuse together, resulting in a porous structure with voids. Furthermore, there are many cases in which this porous structure is completely broken and cracked due to external stresses such as heat, stress, vibration, and impact during the manufacturing process or during use. Therefore, when such semiconductor pressure sensors are installed in the exhaust system of an internal combustion engine, corrosive substances can penetrate through the fragile portion, corroding the wires, electrode pads, etc., and causing a fatal failure of the semiconductor pressure sensor.

[0009] Next, we will explain the second issue. In recent years, climate change countermeasures have become a globally urgent issue, to the point that it has been said that we are entering an era of the boiling earth. As part of this countermeasure, there is a strong societal demand for decarbonization and carbon neutrality in order to reduce greenhouse gas emissions in all sectors. Mobility, in particular, is one sector that urgently requires countermeasures, and fuel cell systems have begun to be widely used as an effective means of addressing this issue. Fuel cell systems also require the use of many semiconductor sensors. However, unlike the exhaust systems of internal combustion engines, which contain corrosive substances, we have discovered that even fuel cell systems, which contain almost no corrosive substances, have a serious reliability issue with the semiconductor pressure sensor disclosed in Patent Document 1. Specifically, the semiconductor pressure sensor is highly vulnerable to water vapor contained in the hydrogen gas used as fuel in fuel cell systems and the condensation water caused by the water vapor.

[0010] The vulnerability of semiconductor pressure sensors to water vapor and condensation water is primarily due to the almost complete lack of water vapor barrier properties in the polymer protective film made of polyparaxylylene-based polymers used as protective films. Specifically, water vapor transmission rates were measured using the differential pressure gas transmission rate measurement method specified in ISO 1105-1. For the measurements, a test piece was used, consisting of a 125 μm thick PEN film (TEONEX manufactured by Toyobo) as a substrate, on which a 10 μm thick layer of dix-C (manufactured by Daisan Kasei), a representative example of a polyparaxylylene-based polymer film, was formed. Water vapor at 40°C and 90% RH was applied to the test piece. Because water vapor permeates by diffusing within the dix-C film, the water vapor transmission rate results are time-dependent. The steady-state portion of the water vapor transmission rate plot represents the material's transmission rate. The steady-state portion is approximately 1.5 g / m. 2 / day. This value is almost the same as the water vapor transmission rate of the PEN film used as the base material. This suggests that dix-C does not have significant water vapor barrier properties. As such, the protective film used in the semiconductor sensor disclosed in Patent Document 1 does not have water vapor barrier properties. Therefore, when the semiconductor pressure sensor disclosed in Patent Document 1 is installed in the fuel supply system of a fuel cell system, water vapor contained in the fuel gas will easily permeate the protective film, even if the measurement medium does not contain corrosive substances. This has led to the problem of fluctuations, malfunctions, and failures caused by water vapor in electronic components such as semiconductor detection elements.

[0011] Furthermore, the researchers also discovered that condensation water caused by water vapor may also cause even more fatal defects according to the following mechanism. When the semiconductor pressure sensor disclosed in Patent Document 1 is used in a fuel cell system and exposed to high-temperature, high-humidity hydrogen gas, which is the measurement medium, hydrogen and water vapor are first absorbed into the gel that seals the semiconductor detection element and other components. Subsequently, the longer the fuel cell system operates, the greater the amount of water vapor that accumulates inside the gel. When this state is reached and the fuel cell system is shut down, the hydrogen absorbed in the gel is released from the gel to the outside in a relatively short time, such as several minutes. Meanwhile, water vapor is difficult to release from the gel to the outside, and most of it remains inside the gel. Subsequently, as the temperature of the environment in which the fuel cell system is placed drops, the absorbed water vapor condenses inside the gel. In particular, in applications such as automobiles, condensation occurs significantly during winter, at night in cold regions, and when the vehicle is used outdoors. In this way, once water vapor condenses and undergoes a phase change to condensed water, its release to the outside is significantly reduced, so the condensed water produced by condensation remains inside the gel and on the surface of each electronic component.

[0012] The condensed water generated by this condensation spreads in layers. The semiconductor pressure sensor disclosed in Patent Document 1 has the above-mentioned fragile portion. Therefore, even if the measurement medium does not contain a corrosive substance, the condensed water that permeates through the fragile portion forms an electrical circuit that electrically connects conductive parts, wires, signal terminals, etc., with different potentials on the semiconductor detection element. Because the potentials are different, the condensed water causes electrolysis, posing a serious problem of corroding these conductive members.

[0013] A specific example of an application of the semiconductor sensor is the fuel cell system described above, where it is used to measure the pressure of hydrogen containing high-temperature, high-humidity water vapor in the anode subsystem of the fuel cell system, and to measure the pressure of high-temperature, high-humidity water vapor, which is the generated water, in the cathode subsystem. Another example of an application of the semiconductor sensor to other systems is to measure the EGR gas pressure in an EGR system containing corrosive gases. To use the semiconductor sensor in these applications, the semiconductor sensor must be resistant to high-temperature, high-humidity water vapor and corrosive substances.

[0014] Therefore, an object of the present disclosure is to obtain a semiconductor sensor that has high durability and reliability even when the medium to be measured contains high-temperature, high-humidity water vapor and corrosive substances.

[0015] Another object of the present invention is to provide a method for manufacturing semiconductor sensors that can stably manufacture semiconductor sensors with high durability and reliability and high quality.

[0016] The semiconductor sensor of the present disclosure comprises a semiconductor detection element, a detection chamber inside which the semiconductor detection element is fixed, a signal terminal having one end exposed inside the detection chamber and the other end exposed outside from the detection chamber for outputting an electrical signal output from the semiconductor detection element to the outside, a wire connecting the semiconductor detection element and an exposed signal terminal portion which is a portion of one end of the signal terminal exposed inside the detection chamber, and a protective film continuously covering the semiconductor detection element, the wire, and the exposed signal terminal portion, wherein the protective film is an inorganic barrier film.

[0017] The method for manufacturing a semiconductor sensor according to the present disclosure includes a component preparation step of preparing a semiconductor detection element, a detection chamber for fixing the semiconductor detection element therein, a signal terminal for outputting an electrical signal output from the semiconductor detection element to the outside, and a wire; a component fixing step of fixing the semiconductor detection element to the inside of the detection chamber, one end of the signal terminal being exposed inside the detection chamber, and the other end of the signal terminal being exposed to the outside from the detection chamber; a connection step of connecting one end of the wire to the semiconductor detection element and connecting the other end of the wire to a signal terminal exposed portion that is a portion of the one end of the signal terminal exposed inside the detection chamber; and a film formation step of successively covering the semiconductor detection element, the wire, and the signal terminal exposed portion with a protective film, wherein the protective film is an inorganic barrier film, and the inorganic barrier film is coated by atomic layer deposition in the film formation step.

[0018] The semiconductor sensor of the present disclosure comprises a semiconductor detection element, a detection chamber inside which the semiconductor detection element is fixed, a signal terminal having one end exposed inside the detection chamber and the other end exposed outside from the detection chamber for outputting an electrical signal output from the semiconductor detection element to the outside, a wire connecting the semiconductor detection element and an exposed signal terminal portion which is a portion on one end side of the signal terminal exposed inside the detection chamber, and a protective film continuously covering the semiconductor detection element, the wire, and the exposed signal terminal portion, and because the protective film is an inorganic barrier film, it exhibits high gas barrier properties even with a very thin film thickness.Therefore, a semiconductor sensor 100 having high durability and reliability can be obtained while maintaining high measurement accuracy without impairing the characteristics of the semiconductor sensor, even when the medium to be measured contains high-temperature and high-humidity water vapor and corrosive substances.

[0019] The method for manufacturing a semiconductor sensor according to the present disclosure includes a component preparation step of preparing a semiconductor detection element, a detection chamber for fixing the semiconductor detection element therein, a signal terminal for outputting an electrical signal output from the semiconductor detection element to the outside, and a wire; a component fixing step of fixing the signal terminal to the detection chamber so that the semiconductor detection element is fixed inside the detection chamber, one end of the signal terminal is exposed inside the detection chamber, and the other end of the signal terminal is exposed outside from the detection chamber; a connection step of connecting one end of the wire to the semiconductor detection element and connecting the other end of the wire to an exposed signal terminal portion that is a portion of the one end of the signal terminal exposed inside the detection chamber; and a film formation step of successively covering the semiconductor detection element, the wire, and the exposed signal terminal portion with a protective film. The protective film is an inorganic barrier film, and since the inorganic barrier film is coated by atomic layer deposition in the film formation step, it is possible to form an inorganic barrier film with a highly uniform film thickness even for a structure with a high aspect ratio, such as the inside of a very narrow and deep trench. This makes it possible to stably manufacture semiconductor sensors with high durability and reliability with high quality.

[0020] 1 is a cross-sectional view showing an outline of a semiconductor sensor according to embodiment 1. FIG. 1 is a cross-sectional view showing an outline of a detection chamber of the semiconductor sensor according to embodiment 1. FIG. 1 is a cross-sectional view showing an outline of a main part of the semiconductor sensor according to embodiment 1. FIG. 2 is a cross-sectional view showing an outline of a main part of the semiconductor sensor according to embodiment 1. FIG. 3 is a cross-sectional view showing an outline of a main part of the semiconductor sensor according to embodiment 2. FIG. 4 is a cross-sectional view showing an outline of a main part of the semiconductor sensor according to embodiment 2. FIG. 5 is a cross-sectional view showing an outline of a main part of the semiconductor sensor according to embodiment 3. FIG. 6 is a cross-sectional view showing an outline of a main part of the semiconductor sensor according to embodiment 4. FIG. 7 is a cross-sectional view showing an outline of a main part of the semiconductor sensor according to embodiment 5. FIG. 8 is a cross-sectional view showing an outline of a detection chamber of the semiconductor sensor according to embodiment 6. FIG. 9 is a diagram showing a manufacturing process of the semiconductor sensor according to embodiment 1. FIG. 10 is a cross-sectional schematic view showing a difference in structure of a protective film depending on a film formation method. FIG. 11 is a cross-sectional view showing an outline of a detection chamber of a semiconductor sensor of a comparative example. FIG. 12 is a cross-sectional view showing an outline of a main part of the semiconductor sensor of the comparative example. FIG. 13 is a cross-sectional view showing an outline of a main part of the semiconductor sensor of the comparative example. 12 is a diagram showing the water vapor permeability of a hybrid laminated film and a polyparaxylylene-based polymer film. 13 is a cross-sectional view showing an outline of a main part of a semiconductor sensor according to an embodiment 9. 14 is a cross-sectional view showing an outline of a main part of a semiconductor sensor according to an embodiment 11. 15 is a cross-sectional view showing an outline of a main part of a semiconductor sensor according to an embodiment 12.

[0021] Hereinafter, a semiconductor sensor and a manufacturing method thereof according to an embodiment of the present disclosure will be described with reference to the drawings. Note that the same or equivalent members and parts in each drawing will be denoted by the same reference numerals.

[0022] Embodiment 1. Figure 1 is a cross-sectional view showing an outline of a semiconductor sensor 100 according to embodiment 1, Figure 2 is a cross-sectional view showing an outline of the detection chamber 7 of the semiconductor sensor 100, and is an enlarged view of part A surrounded by a dashed line in Figure 1, Figures 3 and 4 are cross-sectional views showing an outline of a main part of the semiconductor sensor 100, and are enlarged views of part B surrounded by a dashed line in Figure 2. The semiconductor sensor 100 in this embodiment is a semiconductor pressure sensor that uses a semiconductor detection element 3 that detects pressure. The semiconductor detection element 3 of the semiconductor sensor 100 is not limited to an element that detects pressure. By appropriately selecting the semiconductor detection element 3, it is possible to configure a semiconductor sensor 100 that measures various physical quantities, not just pressure.

[0023] <Semiconductor sensor 100> The semiconductor sensor 100 is a sensor that receives pressure of a medium to be measured with the semiconductor detection element 3, measures the absolute pressure of the medium to be measured, and outputs the measurement result. When the semiconductor sensor 100 is applied to the anode subsystem of a fuel cell system, the medium to be measured is hydrogen containing high-temperature, high-humidity water vapor. The medium to be measured is not limited to hydrogen containing high-temperature, high-humidity water vapor, and may be, for example, high-temperature, high-humidity water vapor.

[0024] The configuration of the semiconductor sensor 100 will be described. As shown in FIG. 2 , the semiconductor sensor 100 includes a semiconductor detection element 3, a detection chamber 7 inside which the semiconductor detection element 3 is fixed, a signal terminal 11 having one end exposed inside the detection chamber 7 and the other end exposed outside from the detection chamber 7 for outputting an electrical signal output from the semiconductor detection element 3 to the outside, a wire 10 connecting the semiconductor detection element 3 and an exposed signal terminal portion 11a, which is a portion of one end of the signal terminal 11 exposed inside the detection chamber 7, and a protective film continuously covering the semiconductor detection element 3, the wire 10, and the exposed signal terminal portion 11a. In this embodiment, the semiconductor sensor 100 includes a signal processing IC 9 fixed inside the detection chamber 7 and having a signal processing circuit. Therefore, wires 10a and 10b are provided as the wire 10, and the semiconductor detection element 3 and the exposed signal terminal portion 11a are connected via the signal processing IC 9 by the wires 10a and 10b. The signal processing IC 9 appropriately amplifies the output of the semiconductor detection element 3 and performs signal processing such as temperature compensation. The signal processing IC 9 is also covered with a protective film. In this embodiment, the protective film is an inorganic barrier film 19. Details of the inorganic barrier film 19 will be described later.

[0025] The detection chamber 7 is made of, for example, resin. When the detection chamber 7 is made of resin, the signal terminal 11 is insert-molded into the detection chamber 7 and fixed thereto. The detection chamber 7 surrounds the semiconductor detection element 3 and the signal processing IC 9 and has an opening 7a for introducing the measurement target medium. The wire 10 is, for example, a gold wire. The signal terminal 11 is made of a metal such as copper. In this embodiment, the semiconductor detection element 3 and the signal processing IC 9 are separate entities, but this is not limiting; the semiconductor detection element 3 and the signal processing IC 9 may be integrated. Even when the semiconductor detection element 3 and the signal processing IC 9 are integrated, the semiconductor detection element 3 and the exposed signal terminal portion 11a are connected by a wire. Whether the semiconductor detection element 3 and the signal processing IC 9 are integrated or separate entities, the wire 10 is used to transmit the electrical signal output from the semiconductor detection element 3 to the signal terminal 11. The interior of the detection chamber 7 is covered with gel 4. The present invention is not limited to a configuration in which the inside of the detection chamber 7 is covered with the gel 4 , and the inside of the detection chamber 7 may not be covered with the gel 4 .

[0026] As shown in FIG. 1 , the semiconductor sensor 100 further includes an inlet pipe 2 that communicates with the detection chamber 7 via an opening 7a and introduces the measurement target medium into the detection chamber 7 from the outside, a housing 1 that holds the detection chamber 7, and a connector unit 5 that holds an input / output terminal 6 that is connected to a signal terminal 11 and handles input and output of electrical signals with the outside. The housing 1 is made of resin. The inlet pipe 2 is also made of the same material as the housing 1. The input / output terminal 6 is made of a metal such as copper. The input / output terminal 6 is electrically connected to the signal terminal 11 by, for example, soldering.

[0027] The medium to be measured is introduced into the detection chamber 7 from the outside through the inlet pipe 2 in the direction of the arrow shown in the figure. The part of the housing 1 surrounding the detection chamber 7, the detection chamber 7, and the inlet pipe 2 are connected via an O-ring 8a. The inlet pipe 2 and an external flow path (not shown) for the medium to be measured are connected via an O-ring 8b. In this way, the part that serves as the flow path for the medium to be measured is sealed.

[0028] The semiconductor detection element 3 receives the physical quantity (pressure in this embodiment) of the medium to be measured introduced from the outside through the introduction tube 2 and converts the physical quantity into an electrical signal. As shown in FIG. 2 , the converted electrical signal is transmitted to the signal processing IC 9 via wire 10a. The processed electrical signal is transmitted to the signal terminal 11 via wire 10b and then output to the outside from the input / output terminal 6. The semiconductor detection element 3 is, for example, an element that directly receives pressure using a single-crystal silicon diaphragm and converts the diaphragm's distortion into an electrical signal using a piezoresistor provided on its outer edge, etc. As shown in FIG. 3 , the semiconductor detection element 3 has an electrode pad 17 on its surface that is connected to the wire 10a. Although FIG. 2 shows only one wire 10a, multiple wires 10a and multiple electrode pads 17 may be used.

[0029] Comparative Example Prior to describing the protective film, which is a key feature of the present disclosure, a comparative example will be described. FIG. 14 is a cross-sectional view showing a schematic view of the detection chamber 7 of a semiconductor sensor 101 of the comparative example, illustrating a portion equivalent to FIG. 2 . FIGS. 15 to 17 are cross-sectional views showing a schematic view of a key feature of the semiconductor sensor 101 of the comparative example, illustrating an enlarged view of the portion C surrounded by the dashed line in FIG. 14 . The semiconductor sensor 101 is a sensor for detecting pressure. The semiconductor sensor 101 has a protective film 12, and the semiconductor detection element 3, signal processing IC 9, and wire 10 provided in the detection chamber 7 are covered by the protective film 12. The protective film 12 covering the wire 10 is omitted in FIG. 14 . The semiconductor detection element 3, signal processing IC 9, and wire 10 provided in the detection chamber 7 are further covered by a gel 4. The semiconductor sensor 101 differs from the semiconductor sensor 100 in that the protective film 12 is a polymer protective film made of a fluorine-containing polyparaxylylene-based polymer.

[0030] It appears that coating the semiconductor detection element 3, the exposed signal terminal portion 11a, and the wires 10a and 10b with a polyparaxylylene-based polymer can protect these parts from water vapor and corrosive substances. However, as shown in FIG. 15 , the CVD polyparaxylylene-based polymer coating has a weak portion 18 in the overhanging portion of the ball at the base of the wire 10b, where a sufficiently thick and high-quality protective film 12 is not formed. The weak portion 18 is a gap where the protective film 12 is not formed. If a corrosive substance seeps in through the weak portion 18, it will corrode the wire 10b, the electrode pad 17 of the semiconductor detection element 3, and the like, causing a fatal failure of the semiconductor sensor 101.

[0031] The polyparaxylylene-based polymer and fragile portion 18 can cause fatal failure of the semiconductor sensor 101 even when exposed to water vapor and condensation water caused by water vapor. The polymer protective film made of a polyparaxylylene-based polymer has almost no water vapor barrier properties. Therefore, when the semiconductor sensor 101 is used in an environment containing high-temperature, high-pressure water vapor, the protective film 12 has no water vapor barrier properties, and water vapor easily passes through the protective film 12. High-temperature, high-pressure water vapor is absorbed into the gel 4 from the direction of the arrow shown in Figure 15. The white circles shown in the gel 4 represent particles of water vapor 13a absorbed into the gel 4. As a result, fluctuations, malfunctions, and failures caused by water vapor can occur in electronic components such as the semiconductor detection element 3.

[0032] Condensed water also causes fatal defects in the semiconductor sensor 101 according to the following mechanism. When the semiconductor sensor 101 is used in a fuel cell system and exposed to high-temperature, high-humidity hydrogen gas, which is the object of measurement, first, hydrogen, water vapor, and the like are absorbed inside the gel 4 that seals the semiconductor detection element 3, etc. Thereafter, the longer the fuel cell system operates, the greater the amount of water vapor that accumulates inside the gel 4. When the fuel cell system is stopped after this state has occurred, the hydrogen absorbed in the gel 4 is released to the outside from the gel 4 in a relatively short time, such as several minutes. On the other hand, water vapor is difficult to release to the outside from the gel 4, and most of it continues to remain inside the gel 4.

[0033] Thereafter, as the temperature of the environment in which the fuel cell system is placed drops, the absorbed water vapor condenses inside the gel 4, producing condensed water 13, as shown in Fig. 16. In particular, in applications such as automobiles, condensation occurs significantly in winter, at night in cold regions, and when the vehicle is used outdoors. Once the water vapor condenses and undergoes a phase change to condensed water 13, its release to the outside is significantly reduced, and the condensed water 13 continues to remain inside the gel 4 and on the surfaces of each electronic component.

[0034] The condensed water 13 spreads in layers. The semiconductor sensor 101 has the fragile portion 18 described above. Therefore, even if the medium to be measured does not contain corrosive substances, the condensed water 13 that seeps through the fragile portion 18 forms an electrical circuit that electrically connects conductive portions with different potentials on the semiconductor detection element 3, the wire 10b, the signal terminal 11, etc. Because of the different potentials, electrolysis begins in the condensed water 13. Electrolysis corrodes these conductive components. In Figure 17, the corroded area caused by electrolysis is the curved portion D. The condensed water 13 spreads in the direction of the arrow and connects with other conductive portions to form an electrical circuit. Corrosion of the conductive components causes them to peel off and break, so the condensed water 13 can cause fatal problems with the semiconductor sensor 101.

[0035] <Protective Film> The protective film, which is a key feature of the present disclosure, will now be described. In the present disclosure, as shown in FIG. 2 , the protective film is an inorganic barrier film 19. The inorganic barrier film 19 continuously covers the semiconductor detection element 3, the wire 10, the signal processing IC 9, and the exposed signal terminal portion 11a. As shown in FIG. 3 , the inorganic barrier film 19 does not have any fragile portions 18 where the inorganic barrier film 19 is not formed. The inorganic barrier film 19 is, for example, alumina, but is not limited thereto. The inorganic barrier film 19 has a thickness of, for example, approximately 10 to 100 nm. Even with such a very thin thickness, the inorganic barrier film 19 exhibits extremely high barrier properties. This characteristic is the greatest feature of the inorganic barrier film 19. The inorganic barrier film 19 prevents the permeation of water vapor 13a contained in the measurement target medium introduced into the detection chamber 7 from the outside, thereby preventing problems such as characteristic fluctuations, malfunctions, and failures of electronic components, such as the semiconductor detection element 3, caused by the water vapor 13a.

[0036] 4, there are cases where the external environmental temperature of a system equipped with semiconductor sensor 100 drops, causing the water vapor absorbed by gel 4 to condense, spreading as layers of condensed water 13. Even in such a case, inorganic barrier film 19 does not have fragile portions 18, preventing conduction between conductive members due to condensed water 13. Therefore, corrosion of semiconductor sensor 100 caused by electrolysis due to the formation of an electrically closed circuit, as seen in semiconductor sensor 101 of the comparative example, does not occur.

[0037] Since the protective film is the inorganic barrier film 19, the inorganic barrier film 19 exhibits high gas barrier properties despite its extremely thin film thickness. Therefore, the semiconductor sensor 100 can be obtained with high durability and reliability, while maintaining high measurement accuracy without impairing the characteristics of the semiconductor sensor 100, even when the medium to be measured contains high-temperature, high-humidity water vapor and corrosive substances.

[0038] In this embodiment, as shown in FIG. 2 , the inorganic barrier film 19, which is a protective film, further continuously covers the inner portion of the detection chamber 7. The reason for this configuration is explained below. In principle, to improve durability against a measurement medium containing corrosive substances and water vapor, it is sufficient to cover only the components to be protected (in this embodiment, the semiconductor detection element 3, the signal processing IC 9, the wires 10, and the exposed signal terminal portion 11a) that may be damaged by exposure to the measurement medium with the inorganic barrier film 19. However, depending on the adhesion of the inorganic barrier film 19, the measurement medium may penetrate through the interface between the inorganic barrier film 19 and its underlying material at the boundary between the covered and uncovered areas, potentially preventing the semiconductor sensor 100 from achieving the predetermined reliability. Furthermore, selectively covering only these components to be protected with the inorganic barrier film 19 requires complex masking. This complex masking process is ineffective in terms of both throughput and cost.

[0039] By continuously covering the inner portion of the detection chamber 7 with the inorganic barrier film 19, the interface distance between the area where the protection target member is covered and the area where the inorganic barrier film 19 is not covered can be significantly increased, thereby improving the reliability of the semiconductor sensor 100. Furthermore, since complicated masking is no longer necessary, this is effective in terms of both throughput and cost, and therefore improves the productivity of the semiconductor sensor 100. Furthermore, all conductive components within the detection chamber 7 can be reliably protected.

[0040] As described above, the semiconductor sensor 100 according to the first embodiment comprises the semiconductor detection element 3, the detection chamber 7 inside which the semiconductor detection element 3 is fixed, the signal terminal 11 having one end exposed inside the detection chamber 7 and the other end exposed outside from the detection chamber 7 for outputting an electrical signal output from the semiconductor detection element 3 to the outside, the wire 10 connecting the semiconductor detection element 3 and the signal terminal exposed portion 11 a which is a portion on one end side of the signal terminal 11 exposed inside the detection chamber 7, and a protective film continuously covering the semiconductor detection element 3, the wire 10, and the signal terminal exposed portion 11 a. Because the protective film is the inorganic barrier film 19, the inorganic barrier film 19 exhibits high gas barrier properties despite its very thin film thickness. Therefore, it is possible to obtain a semiconductor sensor 100 having high durability and reliability while maintaining high measurement accuracy without impairing the characteristics of the semiconductor sensor 100, even when the medium to be measured contains high-temperature and high-humidity water vapor and corrosive substances.

[0041] When the inorganic barrier film 19, which is a protective film, further continuously covers the inner portion of the detection chamber 7, it is possible to significantly increase the interface distance between the region where the protection target member is covered and the region where the inorganic barrier film 19 is not covered, thereby improving the reliability of the semiconductor sensor 100. Furthermore, since complicated masking is no longer necessary, this is effective in terms of both throughput and cost, and therefore the productivity of the semiconductor sensor 100 can be improved.

[0042] Second Embodiment A semiconductor sensor 100 according to a second embodiment will now be described. Figures 5 and 6 are cross-sectional views showing an outline of the main parts of the semiconductor sensor 100 according to the second embodiment, and are views showing the same positions as in Figure 3. Figure 7 is a cross-sectional view showing an outline of the main parts of the semiconductor sensor 100 according to the second embodiment, and is an enlarged view of the portion of the semiconductor detection element 3 on the side of the medium to be measured, schematically illustrating the principle of the detour effect. The semiconductor sensor 100 according to the second embodiment differs from that of the first embodiment in the configuration of the protective film.

[0043] The protective film of the semiconductor sensor 100 shown in embodiment 2 is a laminated inorganic barrier film 19. The laminated inorganic barrier film 19 shown in FIG. 5 is an inorganic barrier film 19a and an inorganic barrier film 19b. In FIG. 5, an example in which the inorganic barrier film 19 has two layers is shown for the sake of simplicity, but the number of layers of the inorganic barrier film 19 is not limited to this. Naturally, the inorganic barrier film 19 may be further laminated as necessary. In principle, the greater the number of layers of the inorganic barrier film 19, the more improved the barrier properties of the inorganic barrier film 19 as a whole. In FIG. 5, particles of water vapor 13a captured in the gel 4 are indicated by white circles.

[0044] As described above, even a single-layer inorganic barrier film 19 exhibits significant barrier properties against gases such as water vapor. By stacking inorganic barrier films 19, a robust structure can be constructed, even against defects in the inorganic barrier film 19 due to the adhesion of foreign matter during the manufacturing process. This principle is explained using FIG. 7 . In FIG. 7, gas is applied in the direction of the large arrow. The inorganic barrier film 19 shown in FIG. 7 consists of four layers. The four layers of inorganic barrier film 19 cover the wiring 15 of the semiconductor base 16. The semiconductor sensor 100 is generally manufactured in a clean room managed to minimize the presence of foreign matter. However, even when manufactured in a clean room, it is theoretically impossible to completely eliminate foreign matter. Therefore, it is expected that the inorganic barrier film 19 will contain a certain amount of defects 14 caused by foreign matter in the clean room or in the film-forming equipment. Because the inorganic barrier film 19 itself is very thin, approximately 10 to 100 nm, once a defect occurs, the defect often penetrates the inorganic barrier film 19. Such penetrating defects act as permeation paths for various gases, and therefore significantly reduce the gas barrier properties of the inorganic barrier film 19 .

[0045] However, by forming the inorganic barrier film 19 not as a single layer but as a laminated structure formed by separating each film formation process into multiple layers, the defects 14 in each layer of the inorganic barrier film 19 can be connected to each other and not penetrate the entire inorganic barrier film 19. With this configuration, even if the permeation rate of various gases increases due to the defects 14 in each layer, the only way for the permeated gas to reach the defects in the next layer is to propagate by diffusion between inorganic barrier films 19, as shown by the arrows superimposed on the inorganic barrier film 19 in Figure 7. Therefore, the effective length of the path through which the applied gas permeates is significantly extended, thereby significantly lengthening the time it takes for the gas to permeate to the semiconductor detection element 3. Since the time it takes for the gas to permeate to the semiconductor detection element 3 is significantly extended, the time until various adverse effects caused by gas permeation, such as fluctuations in the characteristics of the semiconductor detection element 3 and corrosion, begin to occur can be significantly delayed.

[0046] In this way, by forming the inorganic barrier film 19 as a laminated film, the effect of diverting the applied gas can be obtained, thereby further improving the gas barrier properties of the semiconductor sensor 100 and further improving the reliability of the semiconductor sensor 100. Furthermore, as shown in Figure 6, even if the condensed water 13 spreads in layers, the laminated inorganic barrier film 19 does not have any interconnected, penetrating defects 14, and therefore prevents conduction between the conductive members due to the condensed water 13. This makes it possible to suppress corrosion caused by electrolysis due to the formation of an electrically closed circuit, as seen in the semiconductor sensor 101 of the comparative example.

[0047] As described above, the semiconductor sensor 100 according to the second embodiment has the effect of diverting the applied gas because the protective film of the semiconductor sensor 100 is the laminated inorganic barrier film 19. Because the applied gas is diverted, the gas barrier properties of the semiconductor sensor 100 can be further improved, and the reliability of the semiconductor sensor 100 can be further improved. Furthermore, even if the condensed water 13 spreads in layers, the laminated inorganic barrier film 19 does not have any interconnected, penetrating defects 14, and therefore prevents conduction between the conductive members due to the condensed water 13. This makes it possible to suppress corrosion caused by electrolysis due to the formation of an electrically closed circuit, as seen in the semiconductor sensor 101 of the comparative example.

[0048] Third Embodiment A semiconductor sensor 100 according to a third embodiment will now be described. Figure 8 is a cross-sectional view showing an outline of a main part of the semiconductor sensor 100 according to the third embodiment, and shows a position equivalent to that shown in Figure 3. The semiconductor sensor 100 according to the third embodiment uses a self-terminating inorganic barrier film 30 as a protective film.

[0049] The inorganic barrier film serving as the protective film of the semiconductor sensor 100 shown in the third embodiment is a self-terminating inorganic barrier film 30. As described above, the inorganic barrier film 19 shown in FIG. 3 is very thin, and therefore even slight variations in film thickness are likely to lead to variations in the barrier effect. Therefore, it is very important to increase the uniformity of the film thickness. Therefore, in order to increase the uniformity of the film thickness, the third embodiment uses a self-terminating inorganic barrier film 30 as the inorganic barrier film.

[0050] Generally, regardless of the type of film, the film thickness varies depending on the amount of material gas supplied for that film. Therefore, in order to deposit a film with a uniform thickness, it is necessary to precisely control the amount of material gas supplied. However, by using the self-terminating inorganic barrier film 30, it is not necessary to precisely control the supply of material gas, and it is possible to form an inorganic barrier film with a uniform thickness. The principle behind this is explained below. Here, as an example, the self-terminating inorganic barrier film 30 will be explained using alumina (Al2O3). The self-terminating inorganic barrier film 30 is not limited to alumina, and the principle is the same even for other barrier films.

[0051] First, the material gas TMA (trimethylaluminum), which is the main material of alumina and is called a precursor, is introduced onto the object to be coated. At this time, there is no need to precisely control the amount of TMA gas; it is sufficient to supply an excess amount onto the object to be coated. When TMA gas molecules settle on the object to be coated, only the methyl groups of the gas molecules are released on the surface side, so no matter how many TMA gas molecules are subsequently supplied, they cannot bond with these methyl groups. This prevents further TMA gas molecules from settling on the object to be coated, automatically stopping the deposition of the TMA gas molecules.

[0052] In this state, excess unreacted TMA gas remains on the coating target, which is exhausted. Next, water vapor is introduced to oxidize the methyl groups and replace them with hydroxyl groups. To completely replace them, a sufficient amount of water vapor is supplied in anticipation of excess water vapor being generated, and then exhausted. After achieving this state, TMA gas is supplied. The TMA gas bonds with the hydroxyl groups exposed on the surface, initiating new film formation. The inorganic barrier film formed by repeating these cycles is the self-terminating inorganic barrier film 30. By converting the inorganic barrier film into the self-terminating inorganic barrier film 30 in this way, the settlement of gas molecules on the coating target is inhibited after the initial settlement in each cycle of forming the self-terminating inorganic barrier film 30, allowing an inorganic barrier film with a highly uniform thickness to be formed on the coating target.

[0053] As described above, the inorganic barrier film that is the protective film of the semiconductor sensor 100 according to embodiment 3 is the self-stopping inorganic barrier film 30, and therefore in each cycle of forming the self-stopping inorganic barrier film 30, the settlement of gas molecules on the object to be coated is inhibited after the initial settlement, and therefore an inorganic barrier film with a highly uniform film thickness can be formed on the object to be coated.

[0054] Fourth Embodiment A semiconductor sensor 100 according to a fourth embodiment will now be described. Figure 9 is a cross-sectional view showing an outline of a main part of the semiconductor sensor 100 according to the fourth embodiment, and shows a position equivalent to that shown in Figure 3. The semiconductor sensor 100 according to the fourth embodiment uses a silicon nitride film or the like as a protective film.

[0055] The inorganic barrier film, which is the protective film of the semiconductor sensor 100 shown in the fourth embodiment, is made of at least one of silicon nitride film (SiN) and metal oxide films such as alumina (Al2O3), titanium oxide (TiO2), and zinc oxide (ZnO). The inorganic barrier film shown in FIG. 9 is silicon nitride film 31, but the inorganic barrier film is not limited to silicon nitride film 31.

[0056] Various types of films can be considered as the inorganic barrier film used in the semiconductor sensor 100. From the viewpoint of industrially proven use and the ability to stably procure materials at low cost, the inorganic barrier film is preferably made of at least one of a silicon nitride film and metal oxide films such as alumina, titanium oxide, and zinc oxide. The inorganic barrier film is not limited to a single layer, and may be a laminated film made of multiple layers selected from these materials. Furthermore, a film made of these materials may be configured by laminating, for example, a polyparaxylylene-based polymer film on top of the film. Since various protective films can be formed by combining different film types and laminated structures, the film material may be selected appropriately depending on the application, cost, manufacturing constraints, and the like.

[0057] As described above, the inorganic barrier film, which is the protective film of the semiconductor sensor 100 according to the fourth embodiment, is made of at least one of silicon nitride (SiN) and metal oxide films such as alumina (AlO), titanium oxide (TiO), and zinc oxide (ZnO), so that a highly practical inorganic barrier film can be formed and the material for the inorganic barrier film can be procured inexpensively and stably. Furthermore, because the inorganic barrier film can be made of a plurality of different representative types of film, these can be combined arbitrarily to achieve the desired barrier properties depending on the application.

[0058] Fifth Embodiment A semiconductor sensor 100 according to a fifth embodiment will now be described. Figure 10 is a cross-sectional view showing an outline of a main part of the semiconductor sensor 100 according to the fifth embodiment, and shows a position equivalent to that shown in Figure 3. The semiconductor sensor 100 according to the fifth embodiment uses silica for the protective film.

[0059] The inorganic barrier film, which is the protective film of the semiconductor sensor 100 shown in the fifth embodiment, is made of silica 32. Using silica (SiO2) for the inorganic barrier film is also effective. By using silica 32 for the inorganic barrier film, not only can it provide barrier properties against various gases, but also has the effect of trapping water vapor because silica 32 has a very high absorbency for water vapor and the like.

[0060] For example, when the measurement target medium contains a large amount of water vapor, the inorganic barrier film traps the water vapor, thereby delaying the permeation of the water vapor. Furthermore, by heating the inorganic barrier film as needed, the trapped water vapor can be released to the outside. By releasing the water vapor to the outside, the delay effect due to the trapped water vapor is temporarily reset, further delaying the permeation of the water vapor.

[0061] As described above, the inorganic barrier film that is the protective film of the semiconductor sensor 100 according to the fifth embodiment is made of silica 32, and since silica 32 has a very high absorbency for water vapor and the like, it is possible to obtain a water vapor trapping effect by silica 32. By having silica 32 trap water vapor, it is possible to further improve the water vapor barrier properties of the protective film.

[0062] Sixth Embodiment A semiconductor sensor 100 according to a sixth embodiment will now be described. Figure 11 is a cross-sectional view showing an outline of the detection chamber 7 of the semiconductor sensor 100 according to the sixth embodiment, and shows the same position as in Figure 2 with the inorganic barrier film 19 omitted. The semiconductor sensor 100 according to the sixth embodiment differs from the first embodiment in the location where the gel 4 is provided.

[0063] In the semiconductor sensor 100 shown in the sixth embodiment, at least the connection portion between the wire 10 and the semiconductor detection element 3 and the connection portion between the wire 10 and the signal terminal exposed portion 11a are covered with a protective member made of gel 4. In the configuration shown in Fig. 11, the connection portion between the wire 10a and the semiconductor detection element 3, the connection portion between the wire 10a and the signal processing IC 9, the connection portion between the wire 10b and the signal processing IC 9, and the connection portion between the wire 10b and the signal terminal exposed portion 11a are covered with a protective member made of gel 4.

[0064] The measurement target medium may contain solid matter, or the measurement target medium itself may be solidified. For example, in the intake system of an internal combustion engine, various types of dust may be mixed into the air drawn into the measurement target medium from the outside. Similarly, in the exhaust system of an internal combustion engine, soot produced by combustion may be included. In a fuel cell system, in the hydrogen circulation system, water vapor contained in the circulating hydrogen may condense in a sub-freezing environment, and the condensed water may freeze. In the air system, the generated water may freeze. In such cases, if a solid matter acts on the semiconductor detection element 3, the impact and stress caused by the solid matter may physically damage the semiconductor detection element 3.

[0065] 2 of the first embodiment, the inside of the detection chamber 7 is covered with gel 4. By covering the inside of the detection chamber 7 with gel 4, it is possible to protect components such as the semiconductor detection element 3 provided inside the detection chamber 7 from physical impacts and stresses caused by the collision of foreign objects such as solid objects. Because the components such as the semiconductor detection element 3 are protected from solid objects, it is possible to improve the reliability of the semiconductor sensor 100.

[0066] The gel 4 has the function of protecting the inside of the detection chamber 7 from the physical impact of solid objects, as well as the function of absorbing and releasing water vapor. The property of the gel 4 of absorbing water vapor is undesirable for the semiconductor sensor 100. Therefore, in the sixth embodiment, the locations where the gel 4 is provided are limited to at least the connection between the wire 10 and the semiconductor detection element 3, and the connection between the wire 10 and the exposed signal terminal portion 11a. These locations are fragile and are mechanically and electrically important connection portions.

[0067] As described above, in the semiconductor sensor 100 according to embodiment 6, at least the connection portion between the wire 10 and the semiconductor detection element 3, and the connection portion between the wire 10 and the exposed signal terminal portion 11a are covered with a protective member made of gel 4. Since these connection portions are fragile and are important mechanically and electrically, by covering at least these connection portions with gel 4, the absorption of water vapor by the gel 4 can be minimized, and a semiconductor sensor 100 can be obtained that has high durability and reliability while protecting these connection portions from solid objects.

[0068] Seventh Embodiment In the seventh embodiment, a method for manufacturing the semiconductor sensor 100 will be described. Fig. 12 is a diagram showing the manufacturing process of the semiconductor sensor 100 shown in the first embodiment, and Fig. 13 is a cross-sectional view showing the difference in the structure of the protective film depending on the film formation method. The method for manufacturing the semiconductor sensor 100 shown in the first embodiment includes a member preparation step (S11), a member fixing step (S12), a connection step (S13), and a film formation step (S14).

[0069] Each step will be described in detail. The component preparation step is a step of preparing the semiconductor detection element 3, the detection chamber 7 for fixing the semiconductor detection element 3 inside, the signal terminal 11 for outputting an electrical signal output from the semiconductor detection element 3 to the outside, and the wire 10. The semiconductor sensor 100 of the first embodiment shown in Figure 1 further includes a signal processing IC 9, an input / output terminal 6, O-rings 8a and 8b, and an introduction tube 2, and these are also prepared in this step.

[0070] The member fixing step is a step of fixing the semiconductor detection element 3 inside the detection chamber 7, and fixing the signal terminal 11 to the detection chamber 7 so that one end of the signal terminal 11 is exposed inside the detection chamber 7 and the other end of the signal terminal 11 is exposed to the outside from the detection chamber 7. Since the semiconductor sensor 100 of the first embodiment shown in Figure 2 has a signal processing IC 9, the signal processing IC 9 is also fixed inside the detection chamber 7 in this step. The fixing method is, for example, adhesive bonding.

[0071] The connecting step is a step of connecting one end of the wire 10 to the semiconductor detection element 3 and connecting the other end of the wire 10 to the signal terminal exposed portion 11a, which is a portion on the side of one end of the signal terminal 11 exposed inside the detection chamber 7. Since the semiconductor sensor 100 of the first embodiment has the signal processing IC 9, wires 10a and 10b are provided as the wire 10, and the semiconductor detection element 3 and the signal terminal exposed portion 11a are connected by the wires 10a and 10b via the signal processing IC 9.

[0072] The film formation process is a process of continuously covering the semiconductor detection element 3, the wire 10, and the exposed signal terminal portion 11a with a protective film. In the first embodiment, the protective film continuously covers the semiconductor detection element 3, the wire 10, the signal processing IC 9, and the detection chamber 7 that are exposed to the medium to be measured. The protective film is an inorganic barrier film 19. In the film formation process, the inorganic barrier film 19 is formed by atomic layer deposition (hereinafter referred to as ALD).

[0073] After the film formation process, the input / output terminals 6 are electrically connected to the signal terminals 11 by, for example, soldering. Next, the housing 1 and connector portion 5 are formed around the detection chamber 7 by insert molding. Next, the portion of the housing 1 around the detection chamber 7, the detection chamber 7, and the introduction pipe 2 are connected via an O-ring 8a. An external flow path (not shown) for the medium to be measured is connected to the introduction pipe 2 via an O-ring 8b. Through these processes, the semiconductor sensor 100 shown in FIG. 1 is manufactured.

[0074] As described above, the barrier properties against various gases including water vapor are primarily due to the effect of the inorganic barrier film 19. To ensure the effect of the inorganic barrier film 19, it is important that the fragile portion 18, which occurred in the semiconductor sensor 101 of the comparative example, as shown in FIG. 15 is not formed. In the cross-sectional schematic diagrams of FIG. 13 showing the differences in the structure of the protective film depending on the film formation method, FIG. 13( a) shows the result of film formation by ALD, FIG. 13( b) shows the result of film formation by CVD, and FIG. 13( c) shows the result of film formation by PVD. The film formation methods by CVD or PVD used in the semiconductor sensor 101 of the comparative example exhibited insufficient coverage as shown in FIG. 13( b) or FIG. 13( c), and these film formation methods inevitably leave uncovered portions, particularly in structures with high aspect ratios such as narrow and deep trenches.

[0075] 13(a), in order to coat a structure with a high aspect ratio, such as a narrow and deep trench, with a uniform film thickness, it is preferable to form the film by ALD, which has excellent penetration into gaps. ALD has excellent coating properties, allowing a film of uniform thickness to be formed even on the bottom of a narrow trench and on an overhang portion, so it is possible to obtain a semiconductor sensor 100 that reliably has high barrier properties.

[0076] By forming the inorganic barrier film 19 of the semiconductor sensor 100 by ALD, it is possible to form the inorganic barrier film 19 with a highly uniform film thickness even for structures with a high aspect ratio, such as the back of a very narrow and deep trench, and therefore it is possible to manufacture a semiconductor sensor 100 with high durability and reliability with stable, high quality.

[0077] As described above, the manufacturing method of the semiconductor sensor 100 according to the seventh embodiment includes a member preparing step of preparing the semiconductor detection element 3, the detection chamber 7 for fixing the semiconductor detection element 3 inside, the signal terminal 11 for outputting an electrical signal output from the semiconductor detection element 3 to the outside, and the wire 10; a member fixing step of fixing the semiconductor detection element 3 inside the detection chamber 7, one end of the signal terminal 11 exposed inside the detection chamber 7, and fixing the signal terminal 11 to the detection chamber 7 so that the other end of the signal terminal 11 is exposed outside from the detection chamber 7; and a member fixing step of connecting one end of the wire 10 to the semiconductor detection element 3, and the other end of the wire 10 exposed inside the detection chamber 7. The method includes a connection step of connecting to the signal terminal exposed portion 11a, which is a portion on one end of the signal terminal 11, and a film formation step of successively covering the semiconductor detection element 3, the wire 10, and the signal terminal exposed portion 11a with a protective film, the protective film being an inorganic barrier film 19. In the film formation step, the inorganic barrier film 19 is coated by atomic layer deposition (ALD), so that the inorganic barrier film 19 can be formed with a highly uniform film thickness even for structures with a high aspect ratio, such as the inside of a very narrow and deep trench, and therefore a semiconductor sensor 100 with high durability and reliability can be manufactured with stable, high quality.

[0078] Eighth Embodiment A semiconductor sensor 100 according to the eighth embodiment will be described. Figures 18 and 19 are cross-sectional views showing an outline of the main part of the semiconductor sensor 100 according to the eighth embodiment, showing the same position as in Figure 3, and Figure 20 is a diagram showing the water vapor permeability of the hybrid laminated film 21 and the polyparaxylylene-based polymer film. In the semiconductor sensor 100 according to the eighth embodiment, the protective film is composed of the hybrid laminated film 21. The configuration other than the protective film is the same as the configuration shown in the first embodiment.

[0079] In this embodiment, the protective film is a hybrid laminated film 21 formed by alternately stacking inorganic barrier films 19 and organic barrier films 20. While the protective film in the first embodiment is solely the inorganic barrier film 19, the protective film in this embodiment has a hybrid laminated structure formed by alternately stacking inorganic barrier films 19 and organic barrier films 20. In FIG. 18 , the inorganic barrier film 19 a, the organic barrier film 20 a, the inorganic barrier film 19 b, and the organic barrier film 20 b are stacked in this order, with two layers of each of the inorganic barrier film 19 and the organic barrier film 20. However, the number of layers of each film may be increased as needed. In principle, the barrier properties of the protective film improve as the number of layers of each film increases. However, increasing the number of layers of each film increases the thickness of the protective film formed on the semiconductor detection element 3, which can have undesirable effects such as a decrease in the detection sensitivity of the semiconductor detection element 3. Therefore, it is desirable to select an optimal number of layers taking into consideration the desired barrier properties, detection sensitivity, throughput of the manufacturing process, and the like.

[0080] The inorganic barrier film 19 is made of, for example, a silicon nitride film (SiN), and at least one of metal oxide films such as alumina (Al2O3), titanium oxide (TiO2), and zinc oxide (ZnO). The thickness of the inorganic barrier film 19 is, for example, about 10 to 100 nm. The organic barrier film 20 is, for example, a polymer film made of a polyparaxylylene-based polymer. The thickness of the organic barrier film 20 is, for example, about 1 to 5 μm.

[0081] The water vapor permeability of the hybrid laminate film 21 and the polyparaxylylene-based polymer film will be described using FIG. 20 . The water vapor permeability was measured using the differential pressure gas permeability measurement method specified in ISO 1105-1. For the measurement of the polyparaxylylene-based polymer film, a test piece was used in which a 125 μm thick PEN film (TEONEX manufactured by Toyobo) was used as a substrate, and a 10 μm thick layer of dix-C (manufactured by Daisan Kasei Co., Ltd.), a representative example of a polyparaxylylene-based polymer film, was formed thereon. For the measurement of the hybrid laminate film 21, a test piece was used in which a 125 μm thick PEN film (TEONEX manufactured by Toyobo Co., Ltd.) was used as a substrate, and a hybrid laminate film 21 consisting of a 30 nm thick alumina and a 3 μm thick layer of dix-C was formed thereon.

[0082] Water vapor at 40°C and 90% RH was applied to the test piece. In the figure, the results for the hybrid laminated film 21 are shown by a solid line, and the results for the polyparaxylylene-based polymer film are shown by a dashed line. In the plot of water vapor permeability, the steady-state portion represents the permeability of the material. The water vapor permeability of the steady-state portion of the polyparaxylylene-based polymer film was approximately 1.5 g / m 2 This value is almost the same as the water vapor permeability of the PEN film substrate, and dix-C does not have significant water vapor barrier properties. The steady-state water vapor permeability of the hybrid laminate film 21 was 1.1 × 10 -5 g / m 2 This measurement confirmed that the hybrid laminated film 21 had a water vapor barrier property approximately 140,000 times that of the polyparaxylylene polymer film.

[0083] By constructing the hybrid laminated film 21, the water vapor barrier properties of the inorganic barrier film 19 can be further improved by the synergistic effect of the gas bypass effect brought about by the lamination. Furthermore, the high gas barrier properties of the inorganic barrier film 19 and the high corrosion solution resistance of the organic barrier film 20 can be simultaneously achieved. Furthermore, while the inorganic barrier film 19 is relatively brittle and prone to cracking, the organic barrier film 20 has a stress-relieving effect, making the inorganic barrier film 19 less likely to crack through this lamination. The flexibility of the organic barrier film 20 compensates for the brittleness of the inorganic barrier film 19, making the protective film less likely to crack even when deformed by repeated stress application, thereby significantly improving the mechanical reliability of the protective film. Since gaps due to cracks or the like are not generated in the protective film, even if water vapor condenses and spreads in layers as shown in FIG. 19 , no closed electrical circuit is formed with other conductive members with different potentials, thereby suppressing corrosion due to electrolysis.

[0084] In this embodiment, similar to the configuration shown in FIG. 2 of the first embodiment, the hybrid laminated film 21, which is a protective film, further continuously covers the inner portion of the detection chamber 7. By continuously covering the inner portion of the detection chamber 7 with the hybrid laminated film 21, the interface distance between the area where the protected component is covered and the area where the hybrid laminated film 21 is not covered can be significantly increased, thereby improving the reliability of the semiconductor sensor 100. Furthermore, since complex masking is no longer required, this is effective in terms of both throughput and cost, and therefore the productivity of the semiconductor sensor 100 can be improved. Furthermore, all conductive components within the detection chamber 7 can be reliably protected.

[0085] As described above, the semiconductor sensor 100 according to the eighth embodiment includes the semiconductor detection element 3, the detection chamber 7 in which the semiconductor detection element 3 is fixed, the signal terminal 11 having one end exposed inside the detection chamber 7 and the other end exposed from the detection chamber 7 to the outside for outputting an electrical signal output from the semiconductor detection element 3 to the outside, the wire 10 connecting the semiconductor detection element 3 and the signal terminal exposed portion 11 a which is the portion on the side of one end of the signal terminal 11 exposed inside the detection chamber 7, and the protective film continuously covering the semiconductor detection element 3, the wire 10, and the signal terminal exposed portion 11 a, and the protective film is a hybrid laminated film 21 in which inorganic barrier films 19 and organic barrier films 20 are alternately laminated, thereby further improving the water vapor barrier property of the inorganic barrier film 19 by a synergistic effect with the gas bypass effect brought about by the lamination. Furthermore, the high gas barrier property of the inorganic barrier film 19 and the high corrosive solution resistance of the organic barrier film 20 can both be achieved. Furthermore, the inorganic barrier film 19 is relatively brittle and therefore prone to cracking, but the organic barrier film 20 has the effect of alleviating stress, and this lamination makes it possible to make the inorganic barrier film 19 less likely to crack.

[0086] When the hybrid laminated film 21, which is a protective film, further continuously covers the inner portion of the detection chamber 7, it is possible to significantly increase the interface distance between the area where the protected member is covered and the area where the hybrid laminated film 21 is not covered, thereby improving the reliability of the semiconductor sensor 100. Furthermore, since complicated masking is no longer necessary, it is effective in terms of both throughput and cost, and therefore the productivity of the semiconductor sensor 100 can be improved.

[0087] Ninth Embodiment A semiconductor sensor 100 according to a ninth embodiment will be described. Figure 21 is a cross-sectional view showing an outline of a main part of the semiconductor sensor 100 according to the ninth embodiment, and shows a position equivalent to that shown in Figure 3. In the semiconductor sensor 100 according to the ninth embodiment, the protective film is composed of a hybrid laminated film 21, and the organic barrier film is an organic polymer film 33.

[0088] The organic barrier film of the semiconductor sensor 100 shown in embodiment 9 is an organic polymer film 33. The organic barrier film shown in FIG. 21 has two layers, an organic polymer film 33a and an organic polymer film 33b. A polymer film made of a polyparaxylylene-based polymer is suitable for the organic barrier film 20 shown in FIG. 18, but it is more effective to select an appropriate material depending on the desired durability. Specifically, for semiconductor sensors 100 requiring high electrical insulation, it is preferable to select Parylene N or the like as the organic barrier film. In contrast, when the measurement target medium contains water vapor and corrosive gases, it is preferable to select Parylene C as the organic polymer film 33. When the semiconductor sensor 100 is used in a high-temperature environment, it is preferable to select Parylene D as the organic polymer film 33. For applications of semiconductor sensors 100 where the use time at high temperatures is even longer, Parylene HT as the organic polymer film 33 is also an option.

[0089] As described above, the organic barrier film of the semiconductor sensor 100 according to the ninth embodiment is the organic polymer film 33, and therefore the optimum organic polymer film 33 can be selected from a plurality of organic polymer films 33 having different properties, thereby enabling the semiconductor sensor 100 to be flexibly adapted to various media to be measured. Furthermore, because the organic polymer film 33 can be formed at room temperature, residual stress that causes output fluctuations in the semiconductor detection element 3 can be eliminated from the protective film, thereby enabling the semiconductor sensor 100 to be obtained that is highly resistant to corrosive substances while maintaining high measurement accuracy without impairing the properties of the semiconductor sensor 100.

[0090] Tenth Embodiment A semiconductor sensor 100 according to a tenth embodiment will be described with reference to Fig. 18. As described above, Fig. 18 is a cross-sectional view showing an outline of the main part of the semiconductor sensor 100. In the semiconductor sensor 100 according to the tenth embodiment, the protective film is composed of a hybrid laminated film 21, and the thickness ratio of each film is specified.

[0091] In the tenth embodiment, the ratio of the thickness of the inorganic barrier film 19 to the thickness of the organic barrier film 20 is not less than 10 and not more than 500. In FIG. 18 , the ratio of the thickness of the inorganic barrier film 19 to the thickness of the organic barrier film 20 is 10.

[0092] From the viewpoint of barrier properties alone, the thicker the thickness of each film constituting the hybrid laminated film 21, the better. However, the thicker the protective film, the longer the deposition time, which reduces throughput and increases costs. Furthermore, adverse effects such as reduced measurement accuracy and responsiveness of the semiconductor sensor 100 also become significant. Therefore, in practice, it is necessary to optimize the film thickness of each film, taking into account the required barrier properties. Through verification through prototyping and durability evaluation, it was found that the appropriate film thickness for each film, taking into account the required barrier properties, is when the ratio of the thickness of the inorganic barrier film 19 to the thickness of the organic barrier film 20 is between 10 and 500.

[0093] As described above, since the ratio of the thickness of the inorganic barrier film 19 to the thickness of the organic barrier film 20 in the semiconductor sensor 100 according to embodiment 10 is equal to or greater than 10 and equal to or less than 500, it is possible to obtain a semiconductor sensor 100 that combines the gas barrier properties against water vapor and the like provided by the inorganic barrier film 19 and the durability against corrosive substances provided by the organic barrier film 20, while suppressing the total thickness of the protective film.

[0094] Embodiment 11 A semiconductor sensor 100 according to embodiment 11 will be described. Figure 22 is a cross-sectional view showing an outline of a main part of the semiconductor sensor 100 according to embodiment 11, and shows a position equivalent to that shown in Figure 3. In the semiconductor sensor 100 according to embodiment 11, the protective film is composed of a hybrid laminated film 21, and the film exposed to the outside is an inorganic barrier film 19.

[0095] The film exposed to the outside in the protective film of the semiconductor sensor 100 shown in the eleventh embodiment is the inorganic barrier film 19. The configuration shown in Fig. 22 includes an inorganic barrier film 19c exposed to the outside in addition to the configuration shown in Fig. 18.

[0096] Generally, there are very few measurement target media with a single composition. Even within the same system, the composition of the measurement target medium generally varies significantly depending on the location where the semiconductor sensor 100 is installed. Therefore, if the reliability of the semiconductor sensor 100 is a concern due to the composition of the measurement target medium, it is necessary to optimize the structure of the protective film taking into account the environment where the semiconductor sensor 100 is installed.

[0097] For example, when the semiconductor sensor 100 is installed in the hydrogen circulation system of a fuel cell system, the medium to be measured contains high-temperature, high-humidity hydrogen, but contains almost no corrosive substances. Therefore, special precautions must be taken against water vapor and corrosion caused by electrolysis when the water vapor condenses. When the semiconductor sensor 100 is installed in such an environment, it is preferable to use an inorganic barrier film 19 that provides a high barrier against water vapor. To improve the coverage and achieve the gas bypass effect described above, the inorganic barrier film 19 is used as the outermost surface of the protective film that is directly exposed to the medium to be measured, based on a hybrid laminated structure of the inorganic barrier film 19 and the organic barrier film 20, as shown in FIG. 22 .

[0098] As described above, since the film exposed to the outside in the protective film of the semiconductor sensor 100 according to the eleventh embodiment is the inorganic barrier film 19, the durability of the protective film, particularly against water vapor, can be improved.

[0099] Embodiment 12 A semiconductor sensor 100 according to embodiment 12 will be described. Figure 23 is a cross-sectional view showing an outline of a main part of the semiconductor sensor 100 according to embodiment 12, and shows a position equivalent to that shown in Figure 3. In the semiconductor sensor 100 according to embodiment 12, the protective film is composed of a hybrid laminated film 21, and the film exposed to the outside is an organic barrier film 20.

[0100] The film exposed to the outside in the protective film of the semiconductor sensor 100 shown in the twelfth embodiment is the organic barrier film 20. The configuration shown in Fig. 23 is provided with an organic barrier film 20b exposed to the outside, similar to the configuration shown in Fig. 18 .

[0101] When the semiconductor sensor 100 is installed in the exhaust system of an internal combustion engine's EGR system, the medium to be measured contains many corrosive substances. When the semiconductor sensor 100 is installed in such an environment, it is preferable to use an organic barrier film 20 such as a polyparaxylylene-based polymer film. In order to improve the coverage and achieve the gas bypass effect described above, the hybrid laminate structure of the inorganic barrier film 19 and the organic barrier film 20 is used as the base, and as shown in Figure 23, the outermost surface of the protective film that is directly exposed to the medium to be measured is made of an organic barrier film 20 such as a polyparaxylylene-based polymer film.

[0102] As described above, since the film exposed to the outside in the protective film of the semiconductor sensor 100 according to embodiment 12 is the organic barrier film 20, the durability of the protective film against the corrosive gas 13b and the corrosive solution 13c can be particularly improved.

[0103] Embodiment 13 In embodiment 13, a method for manufacturing the semiconductor sensor 100 will be described. The method for manufacturing the semiconductor sensor 100 shown in embodiment 8 includes a member preparation step (S11), a member fixing step (S12), a connection step (S13), and a film formation step (S14), similar to FIG. 12 shown in embodiment 7. Only the film formation step, which is different from the method for manufacturing the semiconductor sensor 100 shown in embodiment 7, will be described.

[0104] The protective film of the semiconductor sensor 100 is a hybrid laminated film in which inorganic barrier films 19 and organic barrier films 20 are alternately layered. To ensure that the desired function of the protective film is stably achieved in industrial mass production, management of the manufacturing process is important. That is, defects in each barrier film must be minimized during the manufacturing process. Possible causes of defects in the protective film include external sources and foreign matter within the manufacturing equipment. The former basically means that the manufacturing process should be carried out in a clean room that is managed to suppress the generation of foreign matter, while the latter suggests that regular cleaning should be performed, including the interior of the manufacturing equipment, such as the film formation chamber.

[0105] In this embodiment, in the film formation process, the semiconductor detection element 3, the wire 10, and the exposed signal terminal portion 11a are successively coated with the inorganic barrier film 19 and the organic barrier film 20 without removing the semiconductor detection element 3, the wire 10, and the exposed signal terminal portion 11a coated with the hybrid laminate film 21 from the film formation chamber to the outside. By performing the film formation process in this manner, the areas coated with the hybrid laminate film 21 are not removed from the film formation chamber to the outside, thereby suppressing defects that may occur in the protective film due to foreign matter. Furthermore, a high-quality protective film with sufficient thickness can be formed even in structural areas with high aspect ratios, such as narrow and deep grooves, and overhanging portions of balls at the base of wires, where the protective film was not formed or was weak as in the comparative example, and therefore a highly reliable semiconductor sensor 100 can be obtained.

[0106] As described above, in the method for manufacturing the semiconductor sensor 100 according to the thirteenth embodiment, the protective film of the semiconductor sensor 100 is a hybrid laminated film in which inorganic barrier films 19 and organic barrier films 20 are alternately stacked, and in the film formation process, the semiconductor detection element 3, the wire 10, and the signal terminal exposed portion 11a, which are covered with the hybrid laminated film 21, are successively coated with the inorganic barrier film 19 and then the organic barrier film 20 without removing them from the film formation chamber to the outside. This makes it possible to suppress defects that may occur in the protective film due to foreign matter.

[0107] Embodiment 14 In embodiment 14, a method for manufacturing the semiconductor sensor 100 will be described. The method for manufacturing the semiconductor sensor 100 shown in embodiment 8 includes a member preparation step (S11), a member fixing step (S12), a connection step (S13), and a film formation step (S14), similar to FIG. 12 shown in embodiment 7. Only the film formation step, which is different from the method for manufacturing the semiconductor sensor 100 shown in embodiment 7, will be described.

[0108] Ensuring adhesion between each film is important for improving the quality of a hybrid laminate structure in which inorganic barrier films 19 and organic barrier films 20 are alternately stacked. For example, if a film is formed and then removed from a deposition chamber and left outside for a long period of time, the surface condition of each film may change due to moisture absorption or other factors. In such cases, it becomes difficult to form the next film on the film with a changed surface condition through a stable chemical reaction, resulting in a decrease in adhesion between each film. As a result, if the interface between each film peels, the peeled portion may become a permeation path for water vapor and corrosive substances, which may cause corrosion of the semiconductor sensor 100 due to this permeation. In severe cases, the barrier film may peel off, significantly shortening the life of the semiconductor sensor 100.

[0109] To prevent such a decrease in adhesion between the films, it is desirable to perform the coating of the inorganic barrier film 19 and the coating of the organic barrier film 20 consecutively without removing the film from the deposition chamber, as described above. However, there may be cases in the manufacturing process where this is not possible due to various circumstances. In the manufacturing method of the semiconductor sensor 100 of this embodiment, a plasma activation treatment is performed between the coating of the inorganic barrier film 19 and the coating of the organic barrier film 20 in the film deposition process. By adding a plasma activation treatment before the deposition of each barrier film in this manner, the surface condition of the film can be normalized and activated, thereby ensuring adhesion between the barrier films. Since the adhesion between the films is improved, the films do not peel off, making the protective film more resistant to external stresses such as heat and vibration, resulting in a more reliable semiconductor sensor 100. Even when the coating of the inorganic barrier film 19 and the coating of the organic barrier film 20 are performed consecutively, a plasma activation treatment may be added before the deposition of each barrier film.

[0110] As described above, in the method for manufacturing the semiconductor sensor 100 according to the fourteenth embodiment, the protective film of the semiconductor sensor 100 is a hybrid laminated film formed by alternately stacking the inorganic barrier film 19 and the organic barrier film 20, and in the film formation process, plasma activation treatment is performed between each coating of the inorganic barrier film 19 and the organic barrier film 20, thereby normalizing and activating the surface state of the film and ensuring adhesion between the barrier films. Improved adhesion between the films prevents the films from peeling off, making the protective film more resistant to external stresses such as heat and vibration, and enabling the production of a more reliable semiconductor sensor 100.

[0111] Furthermore, although various exemplary embodiments and examples are described in this disclosure, the various features, aspects, and functions described in one or more embodiments are not limited to the application of a particular embodiment, but may be applied to the embodiments alone or in various combinations. Therefore, countless modifications not illustrated are contemplated within the scope of the technology disclosed in this specification. For example, this includes cases where at least one component is modified, added, or omitted, or where at least one component is extracted and combined with components of another embodiment.

[0112] 1 Housing, 2 Inlet tube, 3 Semiconductor detection element, 4 Gel, 5 Connector portion, 6 Input / output terminal, 7 Detection chamber, 7a Opening, 8a, 8b O-ring, 9 Signal processing IC, 10, 10a, 10b Wire, 11 Signal terminal, 11a Exposed signal terminal portion, 12 Protective film, 13 Condensed water, 13a Water vapor, 13b Corrosive gas, 13c Corrosive solution, 14 Defect, 15 Wiring, 16 Semiconductor base, 17 Electrode pad, 18 Weak portion, 19, 19a, 19b, 19c Inorganic barrier film, 20, 20a, 20b Organic barrier film, 21 Hybrid laminated film, 30 Self-terminating inorganic barrier film, 31 Silicon nitride film, 32 Silica, 33, 33a, 33b Organic polymer film, 100, 101 Semiconductor sensor

Claims

1. A semiconductor sensor comprising: a semiconductor detection element; a detection chamber inside which the semiconductor detection element is fixed; a signal terminal having one end exposed inside the detection chamber and the other end exposed outside from the detection chamber for outputting an electrical signal output from the semiconductor detection element to the outside; a wire connecting the semiconductor detection element and an exposed signal terminal portion which is a portion on the side of one end of the signal terminal exposed inside the detection chamber; and a protective film continuously covering the semiconductor detection element, the wire, and the exposed signal terminal portion, wherein the protective film is an inorganic barrier film.

2. The semiconductor sensor according to claim 1, wherein the protective film further covers the inner portion of the detection chamber continuously.

3. The semiconductor sensor according to claim 1 or 2, wherein the protective film is a laminated inorganic barrier film.

4. The semiconductor sensor according to any one of claims 1 to 3, wherein the inorganic barrier film is a self-terminating inorganic barrier film.

5. The semiconductor sensor according to any one of claims 1 to 4, wherein the inorganic barrier film is made of at least one of a silicon nitride film and a metal oxide film of alumina, titanium oxide, and zinc oxide.

6. The semiconductor sensor according to any one of claims 1 to 4, wherein the inorganic barrier film is silica.

7. A semiconductor sensor comprising: a semiconductor detection element; a detection chamber inside which the semiconductor detection element is fixed; a signal terminal having one end exposed inside the detection chamber and the other end exposed outside from the detection chamber for outputting an electrical signal output from the semiconductor detection element to the outside; a wire connecting the semiconductor detection element and an exposed signal terminal portion which is a portion on the side of one end of the signal terminal exposed inside the detection chamber; and a protective film continuously covering the semiconductor detection element, the wire, and the exposed signal terminal portion, wherein the protective film is a hybrid laminated film in which inorganic barrier films and organic barrier films are alternately layered.

8. The semiconductor sensor according to claim 7, wherein the protective film further covers the inner portion of the detection chamber continuously.

9. The semiconductor sensor according to claim 7 or 8, wherein the organic barrier film is an organic polymer film.

10. The semiconductor sensor according to any one of claims 7 to 9, wherein the ratio of the thickness of said inorganic barrier film to the thickness of said organic barrier film is 10 or more and 500 or less.

11. The semiconductor sensor according to any one of claims 7 to 10, wherein the film exposed to the outside in the protective film is the inorganic barrier film.

12. The semiconductor sensor according to any one of claims 7 to 10, wherein the film exposed to the outside in the protective film is the organic barrier film.

13. A semiconductor sensor according to any one of claims 1 to 12, wherein at least the connection portion between the wire and the semiconductor detection element and the connection portion between the wire and the exposed signal terminal portion are covered with a protective member made of gel.

14. A method for manufacturing a semiconductor sensor, comprising: a component preparation step of preparing a semiconductor detection element, a detection chamber for fixing the semiconductor detection element inside, a signal terminal for outputting an electrical signal output from the semiconductor detection element to the outside, and a wire; a component fixing step of fixing the signal terminal to the detection chamber so that the semiconductor detection element is fixed inside the detection chamber, one end of the signal terminal is exposed inside the detection chamber, and the other end of the signal terminal is exposed outside from the detection chamber; a connection step of connecting one end of the wire to the semiconductor detection element and connecting the other end of the wire to a signal terminal exposed portion that is a portion of the one end of the signal terminal exposed inside the detection chamber; and a film formation step of covering the semiconductor detection element, the wire, and the signal terminal exposed portion in succession with a protective film, wherein the protective film is an inorganic barrier film, and the inorganic barrier film is coated by atomic layer deposition in the film formation step.

15. A method for manufacturing a semiconductor detection element, comprising: a component preparation step of preparing a semiconductor detection element, a detection chamber for fixing the semiconductor detection element therein, a signal terminal for outputting an electrical signal output from the semiconductor detection element to the outside, and a wire; a component fixing step of fixing the semiconductor detection element to the inside of the detection chamber, one end of the signal terminal being exposed inside the detection chamber, and fixing the signal terminal to the detection chamber so that the other end of the signal terminal is exposed to the outside from the detection chamber; a connection step of connecting one end of the wire to the semiconductor detection element and connecting the other end of the wire to a signal terminal exposed portion which is a portion on the side of one end of the signal terminal exposed inside the detection chamber; and a film formation step of covering the semiconductor detection element, the wire, and the signal terminal exposed portion successively with a protective film, wherein the protective film is a hybrid laminated film in which an inorganic barrier film and an organic barrier film are alternately stacked, In the film-forming process, the semiconductor detection element, the wire, and the exposed signal terminal portion to be coated with the hybrid laminated film are not removed from the film-forming chamber, and the inorganic barrier film and the organic barrier film are successively coated on the semiconductor detection element, the wire, and the exposed signal terminal portion.

16. A method for manufacturing a semiconductor sensor, comprising: a component preparation step of preparing a semiconductor detection element, a detection chamber for fixing the semiconductor detection element inside, a signal terminal for outputting an electrical signal output from the semiconductor detection element to the outside, and a wire; a component fixing step of fixing the semiconductor detection element inside the detection chamber, one end of the signal terminal exposed inside the detection chamber, and fixing the signal terminal to the detection chamber so that the other end of the signal terminal is exposed to the outside from the detection chamber; a connection step of connecting one end of the wire to the semiconductor detection element and connecting the other end of the wire to a signal terminal exposed portion that is a portion of the one end of the signal terminal exposed inside the detection chamber; and a film formation step of successively covering the semiconductor detection element, the wire, and the exposed signal terminal portion with a protective film, wherein the protective film is a hybrid laminate film in which inorganic barrier films and organic barrier films are alternately layered, and wherein in the film formation step, plasma activation treatment is performed between each coating of the inorganic barrier film and each coating of the organic barrier film.

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