Ion implantation apparatus and ion extraction apparatus

Abstract

This ion implantation apparatus comprises: an ion source 20 for generating plasma including desired ions; an extraction unit 22 for extracting an ion group including the desired ions via a first opening OP1 in the ion source 20 to generate an ion beam IB; and an injection processing chamber for irradiating a wafer with the ion beam IB. The extraction unit 22 includes: a reference electrode 22b to which a reference potential Vgnd is applied, the reference electrode 22b having a second opening OP2 through which the ion beam IB passes from downstream to upstream in a traveling direction of the ion beam IB; a suppression electrode 22a to which a suppression potential Vsup lower than the reference potential Vgnd is applied, the suppression electrode 22a having a third opening OP3 through which the ion beam IB passes; and a movable conductor 22e having a fourth opening OP4 through which the ion beam IB passes, and having a variable distance from the first opening OP1 in the traveling direction.

Description

Ion implantation device and ion extraction device

[0001] The present disclosure relates to ion implanters and ion extractors.

[0002] In the semiconductor device manufacturing process, a process of implanting ions into semiconductor wafers (also called an ion implantation process) is a standard practice for the purpose of changing the conductivity or crystalline structure of the semiconductor.

[0003] Japanese Patent Application Laid-Open No. 2019-169407

[0004] The ion beam that is irradiated onto the semiconductor wafer is extracted from an ion source that generates a plasma. Depending on how the ions that make up the ion beam are extracted from the ion source, the manner in which the ion beam interacts with the wafer changes, which affects the results of the ion implantation process.

[0005] An exemplary object of an embodiment of the present disclosure is to provide a technique that can appropriately extract ions from an ion source.

[0006] In order to solve the above problems, one aspect of the present invention provides an ion implantation apparatus comprising: an ion source for generating plasma containing desired ions; an extraction unit for extracting ions containing the desired ions from a first opening in the ion source to generate an ion beam; and an implantation processing chamber for irradiating a wafer with the ion beam. The extraction unit comprises, from downstream to upstream in the direction of ion beam propagation, a reference electrode having a second opening through which the ion beam passes and to which a reference potential is applied, a suppression electrode having a third opening through which the ion beam passes and to which a suppression potential lower than the reference potential is applied, and a movable conductor having a fourth opening through which the ion beam passes and whose distance from the first opening in the direction of ion beam propagation is variable.

[0007] Another aspect of the present invention is an ion extraction device. The device includes: an ion source that generates plasma containing desired ions; and an extraction unit that extracts ions containing the desired ions from a first opening in the ion source to generate an ion beam. The extraction unit includes, from downstream to upstream in the ion beam propagation direction, a reference electrode that has a second opening through which the ion beam passes and to which a reference potential is applied, a suppression electrode that has a third opening through which the ion beam passes and to which a suppression potential lower than the reference potential is applied, and a movable conductor that has a fourth opening through which the ion beam passes and whose distance from the first opening in the ion beam propagation direction is variable.

[0008] Any combination of the above components or mutual substitution of the components or expressions of the present disclosure between methods, devices, systems, etc. are also valid aspects of the present disclosure.

[0009] According to non-limiting exemplary embodiments of the present disclosure, a technique can be provided that allows ions to be appropriately extracted from an ion source.

[0010] 5A to 5C are side views schematically showing the vertical direction of the first workpiece held by the first holding device. 5D are front views showing an example of the operation of the first holding device and the second holding device. 5E are front views showing an example of the operation of the first holding device and the second holding device. 5F are front views showing an example of the operation of the first holding device and the second holding device. 5G are front views showing an example of the operation of the first holding device and the second holding device. 5H are front views showing an example of the operation of the first holding device and the second holding device. 5I are front views showing an example of the operation of the first holding device and the second holding device. 5I are front views showing an example of the operation of the first holding device and the second holding device. 5I are flowcharts showing the flow of an ion implantation method according to an embodiment. 5I are flowcharts showing the flow of an ion implantation method according to a modified example. 5I are top views showing a schematic configuration of an ion implantation device according to another embodiment. 5I are side views showing a schematic configuration of an ion implantation device according to another embodiment. 5I are front views showing a schematic configuration of a beam profiler. 5I are cross-sectional views showing a schematic configuration of an angle measurement device according to the first embodiment. 16(a) is a plan view showing a schematic configuration of an incident surface having an incident aperture, and FIG. 16(b) is a plan view showing a schematic configuration of an exit surface having an exit aperture. Graphs showing an example of a scan voltage waveform of a scan beam and a time waveform of a potential difference in an angle measurement device. FIG. 18(a) is a graph showing an example of a time waveform of a beam current detected by the angle measurement device, and FIG. 18(b) is a graph showing an example of an angular distribution of a scan beam calculated using the time waveform of the beam current of FIG. 18(a). A plan view showing a schematic configuration of an incident surface of an angle measurement device according to a second embodiment. A plan view showing a schematic configuration of an exit surface of an angle measurement device according to the second embodiment. A cross-sectional view showing a schematic configuration of an electrode assembly according to the second embodiment. A plan view showing a schematic configuration of a current measuring instrument according to the second embodiment. A cross-sectional view showing a schematic configuration of an electrode assembly according to a modified example. A plan view showing a schematic configuration of an incident surface of an angle measurement device according to a third embodiment. A plan view showing a schematic configuration of an exit surface of an angle measurement device according to the third embodiment. A cross-sectional view showing a schematic configuration of an electrode assembly according to the third embodiment.1 is a plan view showing a schematic configuration of a current measuring device according to a third embodiment; 2 is a cross-sectional view showing a schematic configuration of an electrode assembly according to a modified example; 3 is an ion extraction apparatus according to a first embodiment; 4 is an ion extraction apparatus according to a first embodiment; 5 is an ion extraction apparatus according to a first embodiment; 6 is an ion extraction apparatus according to a first embodiment; 7 is an ion extraction apparatus according to a first embodiment; 8 is an ion extraction apparatus according to a first embodiment; 9 is an ion extraction apparatus according to a first embodiment; 10 is an ion extraction apparatus according to a second embodiment; 11 is an ion extraction apparatus according to a second embodiment; 12 is an ion extraction apparatus according to a second embodiment; 13 is an ion extraction apparatus according to a second embodiment; 14 is an ion extraction apparatus according to a third embodiment; 15 is an ion extraction apparatus according to a third embodiment; 16 is an ion extraction apparatus according to a third embodiment; 17 is an ion extraction apparatus according to a third embodiment; 18 is an ion extraction apparatus according to a third embodiment; 19 is an ion extraction apparatus according to a third embodiment; 20 is an ion extraction apparatus according to a third embodiment; 21 is an ion extraction apparatus according to a third embodiment; 22 is an ion extraction apparatus according to a third embodiment; 23 is an ion extraction apparatus according to a third embodiment; 24 is an ion extraction apparatus according to a third embodiment; 25 is an ion extraction apparatus according to a third embodiment; 26 is an ion extraction apparatus according to a third embodiment; 27 is an ion extraction apparatus according to a third embodiment; 28 is an ion extraction apparatus according to a third embodiment; 29 is an ion extraction apparatus according to a third embodiment; 30 is an ion extraction apparatus according to a third embodiment; 31 is an ion extraction apparatus according to a third embodiment; 32 is an ion extraction apparatus according to a third embodiment; 33 is an ion extraction apparatus according to a third embodiment; 34 is an ion extraction apparatus according

[0011] Hereinafter, with reference to the drawings, a detailed description will be given of embodiments for carrying out an ion implantation apparatus and an ion implantation method according to the present disclosure. In the description of the drawings, the same elements are designated by the same reference numerals, and duplicated descriptions will be omitted as appropriate. Furthermore, the configurations described below are merely examples, and do not limit the scope of the present invention in any way.

[0012] FIG. 1 is a top view showing a schematic configuration of an ion implantation apparatus 10 according to an embodiment. FIG. 2 is a side view showing a schematic configuration of the ion implantation apparatus 10 according to an embodiment. The ion implantation apparatus 10 is configured to perform ion implantation processing on the surfaces of workpieces W1 and W2. The workpieces W1 and W2 are, for example, substrates, such as semiconductor wafers. For convenience of explanation, the workpieces may be referred to as "substrates" or "wafers" in this specification, but this is not intended to limit the target of the implantation processing to a specific object. The workpieces may also be large substrates (e.g., glass substrates or resin substrates) used in the manufacture of flat panel displays (FPDs).

[0013] The ion implantation device 10 is configured to irradiate the entire surfaces of the workpieces W1 and W2 with a spot-like ion beam by scanning the ion beam back and forth in a predetermined scanning direction and reciprocating the workpieces W1 and W2 in a direction intersecting the scanning direction. The ion implantation device 10 includes a beam generator 12, an implantation processing chamber 14, a transport device 16, and a control device 18.

[0014] The beam generator 12 is configured to generate an ion beam and transport the ion beam to the implantation chamber 14. The implantation chamber 14 accommodates workpieces W1 and W2 to be implanted. In the implantation chamber 14, the workpieces W1 and W2 are irradiated with the ion beam provided by the beam generator 12. The transport device 16 is configured to transport the workpieces W1 and W2 before implantation into the implantation chamber 14 and transport the workpieces W1 and W2 after implantation out of the implantation chamber 14. The control device 18 is configured to control the overall operation of the various devices that make up the ion implantation apparatus 10. The ion implantation apparatus 10 includes a vacuum pumping system (not shown) for providing a desired vacuum environment for the beam generator 12, the implantation chamber 14, and the transport device 16.

[0015] The beam generator 12 includes, in order from the upstream side of the beamline A, an ion source 20, an extraction unit 22, a mass analysis unit 24, a beam shaping unit 26, a beam scanning unit 28, a beam collimation unit 30, an acceleration / deceleration unit 32, and an energy analysis unit 34. Here, the beamline A is used for convenience of explanation and is synonymous with the ideal beam trajectory in design when the ion beam is not scanned by the beam scanning unit 28. Furthermore, the upstream side of the beamline A refers to the side closer to the ion source 20, and the downstream side of the beamline A refers to the side closer to the implantation processing chamber 14 (or the beam stopper 38).

[0016] The beam generator 12 is configured so that the beamline A bends midway. The traveling direction of the beamline A changes at the mass analyzer 24 and the energy analyzer 34. The beamline A is configured to extend in a horizontal plane perpendicular to the vertical direction. For convenience of explanation, the traveling direction of the ion beam traveling along the beamline A is referred to as the z direction, the vertical direction as the y direction, and the direction perpendicular to the y and z directions as the x direction. In particular, the traveling direction of the beamline A from the ion source 20 to the mass analyzer 24 is referred to as the z1 direction, and the direction perpendicular to the y and z1 directions as the x1 direction. Furthermore, the traveling direction of the beamline A from the mass analyzer 24 to the energy analyzer 34 is referred to as the z2 direction, and the direction perpendicular to the y and z2 directions as the x2 direction. Furthermore, the traveling direction of the beamline A downstream of the energy analyzer 34 is referred to as the z3 direction, and the direction perpendicular to the y and z3 directions as the x3 direction.

[0017] The ion source 20 is configured to generate ions that constitute an ion beam. The ion source 20 includes an arc chamber 20a. The arc chamber 20a has an internal space 20b in which plasma is generated. The arc chamber 20a has a substantially rectangular box shape that defines the internal space 20b. The arc chamber 20a has a front slit 20c for extracting ions from the plasma generated in the internal space 20b. The front slit 20c has a slit shape with a long opening width in the horizontal direction (x1 direction) and a short opening width in the vertical direction (y direction). In other words, the horizontal opening width of the front slit 20c is larger than the vertical opening width of the front slit 20c.

[0018] The ion source 20 includes a source magnet device 20d. The source magnet device 20d is configured to apply a magnetic field B1 in the horizontal direction (x1 direction) to the internal space 20b of the arc chamber 20a. By applying the magnetic field B1, the source magnet device 20d increases the generation efficiency of plasma generated in the internal space 20b of the arc chamber 20a. The direction in which the source magnet device 20d applies the magnetic field B1 corresponds to the longitudinal direction of the front slit 20c.

[0019] The extraction unit 22 is provided downstream of the ion source 20. The extraction unit 22 extracts ions from the ion source 20 to generate an ion beam. The extraction unit 22 is configured to extract ions from plasma generated in the internal space 20b of the arc chamber 20a. The extraction unit 22 includes a first extraction electrode 22a and a second extraction electrode 22b. The first extraction electrode 22a is provided downstream of the arc chamber 20a, and the second extraction electrode 22b is provided downstream of the first extraction electrode 22a. A negative suppression voltage is applied to the first extraction electrode 22a. A ground voltage is applied to the second extraction electrode 22b. A positive extraction voltage is applied to the arc chamber 20a.

[0020] The first extraction electrode 22a has a first extraction opening 22c through which the ion beam passes. Similar to the front slit 20c, the first extraction opening 22c has a slit shape with a long opening width in the horizontal direction (x1 direction) and a short opening width in the vertical direction (y direction). In other words, the horizontal opening width of the first extraction opening 22c is larger than the vertical opening width of the first extraction opening 22c. The second extraction electrode 22b has a second extraction opening 22d through which the ion beam passes. Similar to the front slit 20c, the second extraction opening 22d has a slit shape with a long opening width in the horizontal direction (x1 direction) and a short opening width in the vertical direction (y direction). In other words, the horizontal opening width of the second extraction opening 22d is larger than the vertical opening width of the second extraction opening 22d.

[0021] The ion beam extracted by the extraction unit 22 may be a ribbon-shaped beam that spreads in the horizontal direction (x1 direction). The horizontal size of the ribbon-shaped beam can be increased by increasing the horizontal opening widths of the front slit 20c, the first extraction opening 22c, and the second extraction opening 22d. As a result, it becomes easy to increase the beam current of the ion beam extracted from the ion source 20.

[0022] The mass analysis unit 24 is provided downstream of the extraction unit 22. The mass analysis unit 24 is configured to select, by mass analysis, required ion species from the ion beam extracted by the extraction unit 22. The mass analysis unit 24 includes a mass analysis magnet device 24a, a mass analysis slit 24b, and an injector Faraday cup 24c.

[0023] The mass analysis magnet device 24a applies a magnetic field B2 to the ion beam, deflecting the ion beam along different paths depending on the value of the ion mass-to-charge ratio M=m / q (m is mass, q is charge). The mass analysis magnet device 24a applies a magnetic field B2 in the vertical direction (-y direction) to deflect the ion beam in the horizontal direction (x1 direction). The strength of the magnetic field B2 applied by the mass analysis magnet device 24a is adjusted so that ion species having a desired mass-to-charge ratio M pass through the mass analysis slit 24b. The ion beam passing through the mass analysis slit 24b is deflected, for example, by 90 degrees by the mass analysis magnet device 24a.

[0024] The mass analysis slit 24b is provided downstream of the mass analysis magnet device 24a. The mass analysis slit 24b has a slit shape with a narrow opening width in the horizontal direction (x2 direction) and a wide opening width in the vertical direction (y direction). In other words, the vertical opening width of the mass analysis slit 24b is wider than the horizontal opening width of the mass analysis slit 24b.

[0025] The mass analysis slit 24b may be configured so that the opening width (i.e., slit width) in the horizontal direction (x2 direction) is variable to adjust the mass resolution. The mass analysis slit 24b may be configured so that it is composed of two beam shields that are movable in the slit width direction, and the slit width is adjustable by changing the distance between the two beam shields. The mass analysis slit 24b may be configured so that the slit width is adjustable by switching to one of multiple slits with different slit widths.

[0026] The injector Faraday cup 24c is provided downstream of the mass analysis slit 24b. The injector Faraday cup 24c measures the beam current of the mass-analyzed ion beam that passes through the mass analysis slit 24b. The injector Faraday cup 24c can measure the mass analysis spectrum of the ion beam by measuring the beam current while changing the magnetic field strength of the mass analysis magnet device 24a. The measured mass analysis spectrum can be used to calculate the mass resolution of the mass analysis unit 24.

[0027] The injector Faraday cup 24c is configured to be able to be inserted into and removed from the beamline A by the operation of the injector driver 24d. The injector driver 24d moves the injector Faraday cup 24c in a direction (e.g., the x2 direction) perpendicular to the z2 direction in which the beamline A extends. When the injector Faraday cup 24c is placed in the beamline A as shown by the dashed line in Figure 1, it blocks the ion beam traveling downstream. On the other hand, when the injector Faraday cup 24c is retracted from the beamline A as shown by the solid line in Figure 1, the blockage of the ion beam traveling downstream is released.

[0028] A magnetic shield 23 may be provided between the extraction unit 22 and the mass analysis unit 24. The magnetic shield 23 is configured to suppress magnetic field interference between the magnetic field B1 applied to the ion source 20 and the magnetic field B2 applied to the mass analysis unit 24. The magnetic shield 23 is made of a magnetic material such as an electromagnetic steel plate. The magnetic shield 23 has a passage opening 23a that allows the ion beam traveling from the extraction unit 22 toward the mass analysis unit 24 to pass through. The passage opening 23a may have a slit shape that is long in the horizontal direction (x1 direction) and short in the vertical direction (y direction), similar to the front slit 20c. In other words, the horizontal opening width of the passage opening 23a may be larger than the vertical opening width of the passage opening 23a.

[0029] The beam shaping unit 26 is provided downstream of the mass analysis unit 24. The beam shaping unit 26 is configured to shape the ion beam that has passed through the mass analysis unit 24 into a desired cross-sectional shape and convergence / divergence angle. The beam shaping unit 26 includes a lens device that adjusts at least one of the cross-sectional shape and convergence / divergence angle of the ion beam. The beam shaping unit 26 is configured, for example, to focus a ribbon-shaped ion beam that spreads in the horizontal direction and shape it into a spot-shaped ion beam.

[0030] The beam shaping unit 26 includes a plurality of lens devices, for example, three lens devices 26a, 26b, and 26c. The three lens devices 26a to 26c are configured, for example, as electric field type triple quadrupole lenses (also called triplet Q lenses). By using a combination of multiple lens devices, the beam shaping unit 26 can independently adjust the convergence or divergence of the ion beam in each of the horizontal direction (x2 direction) and the vertical direction (y direction). The beam shaping unit 26 may also include a magnetic field type lens device. The beam shaping unit 26 may also include a lens device that shapes the ion beam using both an electric field and a magnetic field.

[0031] The beam scanning unit 28 is provided downstream of the beam shaping unit 26. The beam scanning unit 28 is configured to generate a scanned beam SB by scanning the ion beam back and forth in a predetermined scan direction. The beam scanning unit 28 can also be considered a beam deflection device that deflects the ion beam shaped by the beam shaping unit 26 in the predetermined scan direction. The beam scanning unit 28 is configured so that the scan direction is a direction different from the horizontal direction, for example, so that the scan direction is the vertical direction (y direction).

[0032] The beam scanning unit 28 includes a pair of scanning electrodes 28a and 28b facing each other in the vertical direction (y direction). The pair of scanning electrodes 28a and 28b are connected to a variable voltage power supply (not shown). By periodically changing the voltage applied between the pair of scanning electrodes 28a and 28b, the electric field generated between the pair of scanning electrodes 28a and 28b is changed, thereby deflecting the ion beam at various angles. As a result, the ion beam is scanned over the entire scanning range in the vertical direction (y direction). In FIG. 2 , the arrow Y illustrates the scanning direction and scanning range of the ion beam, and the dashed lines indicate multiple trajectories of the ion beam within the scanning range. Note that the beam scanning unit 28 may be a magnetic field type instead of an electric field type. The beam scanning unit 28 may also include a magnet device for deflecting the ion beam.

[0033] The beam collimator 30 is provided downstream of the beam scanning unit 28. The beam collimator 30 is configured to make the traveling direction of the ion beam scanned back and forth by the beam scanning unit 28 parallel to the direction of the beam line A. The beam collimator 30 has a plurality of arc-shaped collimating lens electrodes 30a, 30b, each having an ion beam passage slit at the center in the horizontal direction (x2 direction). The collimating lens electrodes 30a, 30b are connected to a high-voltage power supply (not shown), and an electric field generated by applying a voltage acts on the ion beam to collimate the traveling direction of the ion beam. Note that the beam collimator 30 may be of a magnetic field type instead of an electric field type. The beam collimator 30 may also include a magnet device for deflecting the ion beam.

[0034] The acceleration / deceleration unit 32 is provided downstream of the beam collimator 30. The acceleration / deceleration unit 32 is configured to accelerate or decelerate the scan beam collimated by the beam collimator 30. The acceleration / deceleration unit 32 is an electrostatic acceleration / deceleration device, and accelerates or decelerates the ion beam by utilizing a potential difference between a first potential applied to the upstream side of the acceleration / deceleration unit 32 and a second potential applied to the downstream side of the acceleration / deceleration unit 32.

[0035] The energy analyzer 34 is provided downstream of the acceleration / deceleration unit 32. The energy analyzer 34 is configured to analyze the energy of the ion beam and pass ions having a desired energy toward the implantation processing chamber 14. The energy analyzer 34 is an angular energy filter (AEF) that deflects the ion beam horizontally and selects a desired energy by the deflection angle θ. The deflection angle θ is, for example, greater than or equal to 10 degrees and less than or equal to 20 degrees, and is approximately 15 degrees. The energy analyzer 34 includes an AEF electrode pair 34a, 34b and an energy analysis slit 34c.

[0036] The AEF electrode pair 34a, 34b are arranged to face each other in a direction perpendicular to the scan direction. The AEF electrode pair 34a, 34b are arranged to face each other in the horizontal direction (x2 direction or x3 direction). The AEF electrode pair 34a, 34b are connected to a high-voltage power supply (not shown) and deflect the ion beam by applying an electric field to it. The AEF electrode pair 34a, 34b are deflection devices that deflect the scan beam in the horizontal direction. The energy analysis slit 34c is provided downstream of the AEF electrode pair 34a, 34b.

[0037] The energy analysis slit 34c has a slit shape with a long opening width in the vertical direction (y direction) and a short opening width in the horizontal direction (x3 direction). That is, the opening width of the energy analysis slit 34c in the vertical direction is larger than the opening width of the energy analysis slit 34c in the horizontal direction. The energy analysis slit 34c allows ion beams of a desired energy value or energy range to pass toward the workpieces W1 and W2 and blocks ion beams other than those.

[0038] The energy analysis unit 34 may be a magnetic field type instead of an electric field type. The energy analysis unit 34 may include a magnet device for magnetic field deflection. The energy analysis unit 34 may use both an electric field and a magnetic field, and may include an AEF electrode pair for electric field deflection and a magnet device for magnetic field deflection.

[0039] In this way, the beam generator 12 supplies the ion beam to be irradiated onto the workpieces W1 and W2 to the implantation processing chamber 14. The beam generator 12 may also be called a beamline device. The beam generator 12 is configured to generate an ion beam for achieving desired implantation conditions by adjusting the operating parameters of various devices that make up the beam generator 12.

[0040] The implantation processing chamber 14 includes a plasma shower device 36 , a beam stopper 38 , a first holding device 40 , and a second holding device 42 .

[0041] The plasma shower device 36 is located downstream of the energy analysis unit 34. The plasma shower device 36 supplies low-energy electrons to the ion beam and the surfaces (processing surfaces) of the workpieces W1 and W2 according to the beam current of the ion beam, thereby suppressing charge-up caused by the accumulation of positive charges on the processing surfaces due to ion implantation. The plasma shower device 36 includes, for example, a shower tube 36a through which the ion beam passes and a plasma generator 36b that supplies electrons into the shower tube 36a. The shower tube 36a has a shape in which the opening width in the vertical direction (y direction) is long and the opening width in the horizontal direction (x3 direction) is short.

[0042] The beam stopper 38 is provided at the most downstream position of the beam line A and is attached to, for example, the side wall of the implantation processing chamber 14. When the workpieces W1 and W2 are not present in the beam line A, the ion beam is incident on the beam stopper 38. The beam stopper 38 is provided with a plurality of tuning cups 38a, 38b, 38c, and 38d. The plurality of tuning cups 38a to 38d are Faraday cups configured to measure the beam current of the ion beam incident on the beam stopper 38. The plurality of tuning cups 38a to 38d are arranged at intervals in, for example, the vertical direction (y direction).

[0043] The first holding device 40 is configured to be able to hold a first workpiece W1 to be subjected to implantation processing. The first holding device 40 is configured to reciprocate the first workpiece W1 held by the first holding device 40 in a direction crossing the scan beam. The first holding device 40 is configured to reciprocate the first workpiece W1 in the horizontal direction (x3 direction). The first holding device 40 is movable along a guide rail 44 extending in the horizontal direction (x3 direction).

[0044] The first holding device 40 includes a first chuck mechanism 50 , a first twist mechanism 52 , a first vertical angle adjustment mechanism 54 , a first horizontal angle adjustment mechanism 56 , and a first reciprocating mechanism 58 .

[0045] The first chuck mechanism 50 is configured to contact the back surface of the first workpiece W1 and hold the first workpiece W1. The first chuck mechanism 50 includes, for example, an electrostatic chuck for holding the first workpiece W1. The first chuck mechanism 50 may also include a temperature adjustment mechanism for cooling or heating the first workpiece W1. The first chuck mechanism 50 also includes a first lift mechanism for lifting the first workpiece W1 so as to separate the first workpiece W1 from the first chuck mechanism 50.

[0046] The first twist mechanism 52 rotatably supports the first chuck mechanism 50. The first twist mechanism 52 rotates the first chuck mechanism 50 around a rotation axis (also referred to as the twist axis) extending in the normal direction to the processing surface of the first workpiece W1 held by the first chuck mechanism 50, thereby adjusting the twist angle φa1 of the first workpiece W1. The first twist mechanism 52 adjusts the twist angle φa1 between an alignment mark provided on the outer periphery of the first workpiece W1 and a reference position, for example. Here, the alignment mark on the first workpiece W1 refers to, for example, a notch or orientation flat provided on the outer periphery of the wafer, and is a mark that serves as a reference for the crystal axis direction and angular position of the wafer in the circumferential direction.

[0047] The first vertical angle adjustment mechanism 54 rotatably supports the first twist mechanism 52. The first vertical angle adjustment mechanism 54 rotates the first twist mechanism 52 around a horizontally extending rotation axis (also referred to as a transport tilt axis) to adjust the vertical orientation of the first workpiece W1. The vertical orientation of the first workpiece W1 can be defined by the vertical rotation angle φb1 around the horizontal rotation axis.

[0048] The first horizontal angle adjustment mechanism 56 rotatably supports the first vertical angle adjustment mechanism 54. The first horizontal angle adjustment mechanism 56 rotates the first vertical angle adjustment mechanism 54 around a rotation axis (also referred to as an injection tilt axis) extending in the vertical direction to adjust the horizontal orientation of the first workpiece W1. The horizontal orientation of the first workpiece W1 can be defined by the horizontal rotation angle φc1 around the vertical rotation axis.

[0049] The first reciprocating motion mechanism 58 is configured to move the first horizontal angle adjustment mechanism 56 in the horizontal direction (x3 direction). The first reciprocating motion mechanism 58 moves the first horizontal angle adjustment mechanism 56 along the guide rail 44. The first reciprocating motion mechanism 58 includes, for example, a first ball screw 58a that extends in the horizontal direction (x3 direction) along the guide rail 44. The first reciprocating motion mechanism 58 rotates the first ball screw 58a to linearly move the first horizontal angle adjustment mechanism 56 in the horizontal direction.

[0050] The second holding device 42 is configured to be able to hold a second workpiece W2 to be subjected to implantation processing. The second holding device 42 is configured to reciprocate the second workpiece W2 held by the second holding device 42 in a direction crossing the scan beam. The second holding device 42 is configured to reciprocate the second workpiece W2 in the horizontal direction (x3 direction). The second holding device 42 is movable along a guide rail 44 extending in the horizontal direction (x3 direction).

[0051] The second holding device 42 can be configured similarly to the first holding device 40. The second holding device 42 is movable in the same direction as the first holding device 40. The second holding device 42 is movable along a guide rail 44 shared with the first holding device 40. Note that the second holding device 42 may be configured to be movable along a guide rail different from that of the first holding device 40. In other words, the implantation processing chamber 14 may be provided with a first guide rail along which the first holding device 40 moves and a second guide rail along which the second holding device 42 moves. The second holding device 42 is movable simultaneously with the first holding device 40. The second holding device 42 is movable independently of the first holding device 40.

[0052] The second holding device 42 includes a second chuck mechanism 60 , a second twist mechanism 62 , a second vertical angle adjustment mechanism 64 , a second horizontal angle adjustment mechanism 66 , and a second reciprocating mechanism 68 .

[0053] The second chuck mechanism 60 is configured to contact the back surface of the second workpiece W2 and hold the second workpiece W2. The second chuck mechanism 60 includes, for example, an electrostatic chuck for holding the second workpiece W2. The second chuck mechanism 60 may also include a temperature adjustment mechanism for cooling or heating the second workpiece W2. The second chuck mechanism 60 also includes a second lift mechanism for lifting the second workpiece W2 so as to separate it from the second chuck mechanism 60.

[0054] The second twist mechanism 62 rotatably supports the second chuck mechanism 60. The second twist mechanism 62 rotates the second chuck mechanism 60 around a rotation axis (also referred to as a twist axis) extending in the normal direction to the processing surface of the second workpiece W2 held by the second chuck mechanism 60, thereby adjusting the twist angle φa2 of the second workpiece W2. The second twist mechanism 62 adjusts, for example, the twist angle φa2 between an alignment mark provided on the outer periphery of the second workpiece W2 and a reference position.

[0055] The second vertical angle adjustment mechanism 64 rotatably supports the second twist mechanism 62. The second vertical angle adjustment mechanism 64 rotates the second twist mechanism 62 around a horizontally extending rotation axis (also referred to as a transport tilt axis) to adjust the vertical orientation of the second workpiece W2. The vertical orientation of the second workpiece W2 can be defined by the vertical rotation angle φb2 around the horizontal rotation axis.

[0056] The second horizontal angle adjustment mechanism 66 rotatably supports the second vertical angle adjustment mechanism 64. The second horizontal angle adjustment mechanism 66 rotates the second vertical angle adjustment mechanism 64 around a rotation axis (also referred to as an injection tilt axis) extending in the vertical direction to adjust the horizontal orientation of the second workpiece W2. The horizontal orientation of the second workpiece W2 can be defined by the horizontal rotation angle φc2 around the vertical rotation axis.

[0057] The second reciprocating motion mechanism 68 is configured to move the second horizontal angle adjustment mechanism 66 in the horizontal direction (x3 direction). The second reciprocating motion mechanism 68 moves the second horizontal angle adjustment mechanism 66 along the guide rail 44. The second reciprocating motion mechanism 68 includes, for example, a second ball screw 68a extending in the horizontal direction (x3 direction) along the guide rail 44, and by rotating the second ball screw 68a, the second horizontal angle adjustment mechanism 66 is linearly moved in the horizontal direction.

[0058] The transport device 16 includes a first transport device 70 and a second transport device 72. The first transport device 70 and the second transport device 72 are arranged apart from the beamline A in the horizontal direction (x3 direction). In the example of FIG. 1 , the first transport device 70 is arranged apart from the beamline A in the −x3 direction, and the second transport device 72 is arranged apart from the beamline A in the +x3 direction. The first transport device 70 and the second transport device 72 are arranged such that the beam stopper 38 is located between the first transport device 70 and the second transport device 72, for example.

[0059] The first transfer device 70 is configured to load the first workpiece W1 before the implantation process into the implantation process chamber 14 and load the first workpiece W1 after the implantation process out of the implantation process chamber 14. The first transfer device 70 loads the first workpiece W1 into the first holding device 40 and loads the first workpiece W1 out of the first holding device 40. The first transfer device 70 includes, for example, a first transfer robot (not shown) for transporting the first workpiece W1. The first transfer device 70 transports the first workpiece W1 through a first transfer port 74 provided in the sidewall of the implantation process chamber 14.

[0060] The second transfer device 72 is configured to load the second workpiece W2 before the implantation process into the implantation process chamber 14 and load the second workpiece W2 after the implantation process out of the implantation process chamber 14. The second transfer device 72 loads the second workpiece W2 into the second holding device 42 and loads the second workpiece W2 out of the second holding device 42. The second transfer device 72 includes, for example, a second transfer robot (not shown) for transporting the second workpiece W2. The second transfer device 72 transports the second workpiece W2 through a second transfer port 76 provided in the sidewall of the implantation process chamber 14.

[0061] The control device 18 controls the overall operation of the ion implantation device 10. The control device 18 is realized in terms of hardware by elements and mechanical devices such as a computer CPU and memory, and in terms of software by a computer program, etc. Various functions provided by the control device 18 can be realized by cooperation between hardware and software.

[0062] The control device 18 includes a processor 18a such as a central processing unit (CPU) and a memory 18b such as a read-only memory (ROM) or a random access memory (RAM). The control device 18 controls the overall operation of the ion implantation device 10 in accordance with a program stored in the memory 18b, for example, by the processor 18a executing the program. The processor 18a may execute a program stored in an arbitrary storage device other than the memory 18b, may execute a program obtained from an arbitrary recording medium by a reading device, or may execute a program obtained via a network. The memory 18b in which the program is stored may be a volatile memory such as a dynamic random access memory (DRAM), or may be a non-volatile memory such as an electrically erasable programmable read-only memory (EEPROM), a flash memory, a magnetoresistive memory, a resistance change memory, or a ferroelectric memory. Non-volatile memory, magnetic recording media such as magnetic tapes and magnetic disks, and optical recording media such as optical disks are examples of non-transitory, tangible computer-readable storage media.

[0063] The various functions provided by the control device 18 may be realized by a single device having a processor 18a and a memory 18b, or may be realized by cooperation of multiple devices each having a processor 18a and a memory 18b.

[0064] 3 is a front view showing a schematic configuration of the first holding device 40 and the second holding device 42, as viewed in the beam traveling direction (z3 direction) in the implantation processing chamber 14. In FIG. 3, the first holding device 40 is disposed at a first transfer position 80, and the second holding device 42 is disposed at a second transfer position 82. The first transfer position 80 is a position for loading or unloading the first workpiece W1 into or from the first holding device 40 through the first transfer port 74. The first transfer position 80 corresponds to the position of the first transfer port 74. The second transfer position 82 is a position for loading or unloading the second workpiece W2 into or from the second holding device 42 through the second transfer port 76. The second transfer position 82 corresponds to the position of the second transfer port 76. The first transfer position 80 and the second transfer position 82 are separated in the horizontal direction (x3 direction) from an implantation position 84 for irradiating the workpieces W1 and W2 with an ion beam.

[0065] The implantation position 84 is located at the center of the implantation processing chamber 14 in the horizontal direction (x3 direction). The implantation position 84 is located between the first transfer position 80 and the second transfer position 82. The implantation position 84 includes an implantation center position 84C, an implantation left end position 84L, and an implantation right end position 84R. In FIG. 3 , the workpieces WC, WL, and WR located at the implantation center position 84C, the implantation left end position 84L, and the implantation right end position 84R are indicated by two-dot chain lines. The implantation center position 84C corresponds to the position where the scan beam SB generated by the beam generating device 12 is irradiated. The implantation left end position 84L is shifted to the left (+x3 direction in FIG. 3 ) from the implantation center position 84C and is set so that the entire surface to be processed of the workpiece WL located at the implantation left end position 84L does not overlap with the scan beam SB. The right end position 84R of the implantation is shifted to the right (-x3 direction in Figure 3) from the central implantation position 84C, and is set so that the entire surface of the workpiece WR placed at the right end position 84R does not overlap with the scan beam SB.

[0066] The size h of the irradiation range of the scan beam SB in the vertical direction (y direction) Ｂ is the size h of the processed surfaces of the processed objects W1 and W2 in the vertical direction (y direction) Ｗ The vertical size of the scan beam SB is larger than h Ｂis, for example, the vertical size h of the processed surfaces of the processed objects W1 and W2. Ｗ The thickness is 1.1 times or more and 3 times or less, and preferably 1.2 times or more and 2 times or less.

[0067] The first holding device 40 reciprocates in the horizontal direction (x3 direction) at the injection position 84, thereby irradiating the entire processing surface of the first workpiece W1 with the scan beam SB. The first holding device 40 reciprocates within a movement range C from the injection left end position 84L to the injection right end position 84R, thereby irradiating the entire processing surface of the first workpiece W1 with the scan beam SB. The first holding device 40 moves to the first transfer position 80, thereby enabling the first workpiece W1 to be loaded or unloaded. The first holding device 40 is movable between the injection position 84 and the first transfer position 80. The first holding device 40 is movable over a first movable range E1 from the first transfer position 80 to the injection left end position 84L. The first holding device 40 cannot move to the second transfer position 82.

[0068] The second holding device 42 reciprocates in the horizontal direction (x3 direction) at the injection position 84, thereby irradiating the entire processing surface of the second workpiece W2 with the scan beam SB. The second holding device 42 reciprocates within a movement range C from the injection left end position 84L to the injection right end position 84R, thereby irradiating the entire processing surface of the second workpiece W2 with the scan beam SB. The second holding device 42 moves to the second transfer position 82, thereby enabling the second workpiece W2 to be loaded or unloaded. The second holding device 42 is movable between the injection position 84 and the second transfer position 82. The second holding device 42 is movable over a second movable range E2 from the second transfer position 82 to the injection right end position 84R. The second holding device 42 cannot move to the first transfer position 80.

[0069] The first implantation position for irradiating the first workpiece W1 held by the first holding device 40 with an ion beam is common to the second implantation position for irradiating the second workpiece W2 held by the second holding device 42 with an ion beam. That is, the first implantation position and the second implantation position coincide with the common implantation position 84. Furthermore, the first movement range in which the first holding device 40 reciprocates the first workpiece W1 at the first implantation position is common to the second movement range in which the second holding device 42 reciprocates the second workpiece W2 at the second implantation position. That is, the first movement range and the second movement range coincide with the common movement range C. The first movement range and the second movement range overlap when viewed in the beam traveling direction. The vertical position of the first workpiece W1 held by the first holding device 40 at the first implantation position is common to the vertical position of the second workpiece W2 held by the second holding device 42 at the second implantation position. The position in the beam traveling direction of the first workpiece W1 held by the first holding device 40 at the first implantation position is the same as the position in the beam traveling direction of the second workpiece W2 held by the second holding device 42 at the second implantation position. Therefore, the first holding device 40 and the second holding device 42 are configured to allow the first workpiece W1 and the second workpiece W2 to move back and forth in the same manner relative to the scan beam SB. Therefore, the first workpiece W1 and the second workpiece W2 are irradiated with the scan beam SB in a common implantation environment.

[0070] 4(a) and 4(b) are top views schematically showing the horizontal orientation of the first workpiece W1 held by the first holding device 40. 4(a) and 4(b) show changes in the horizontal orientation of the first workpiece W1 caused by the first horizontal angle adjustment mechanism 56. The same applies to the horizontal orientation of the second workpiece W2 held by the second holding device 42.

[0071] 4(a) and 4(b) show the orientation of the first workpiece W1 during the implantation process in which the first workpiece W1 is irradiated with the scan beam SB. FIG. 4(a) shows a case in which the surface of the first workpiece W1 is perpendicular to the direction of travel of the scan beam SB (direction z3). FIG. 4(b) shows a case in which the surface of the first workpiece W1 is obliquely intersecting the direction of travel of the scan beam SB (direction z3). In FIG. 4(b), the surface of the first workpiece W1 has a horizontal tilt angle α1 with respect to the direction of travel of the scan beam SB (direction z3). The horizontal tilt angle α1 indicates the horizontal inclination of the incident direction of the scan beam SB relative to the normal to the surface of the first workpiece W1. The first holding device 40 can adjust the horizontal tilt angle α1 of the first workpiece W1 by driving the first horizontal angle adjustment mechanism 56 to adjust the horizontal rotation angle φc1. The first holding device 40 is configured to be able to adjust the horizontal tilt angle α1 within a range of ±30 degrees or ±60 degrees during ion implantation, for example.

[0072] 5(a) to 5(c) are side views schematically showing the vertical orientation of the first workpiece W1 held by the first holding device 40. 5(a) to 5(c) show changes in the vertical orientation of the first workpiece W1 caused by the first vertical angle adjustment mechanism 54. The same applies to the vertical orientation of the second workpiece W2 held by the second holding device 42.

[0073] 5A shows an example of the orientation of the first workpiece W1 during the implantation process in which the scan beam SB is irradiated onto the first workpiece W1. In FIG. 5A, the first holding device 40 holds the first workpiece W1 so that the surface to be processed of the first workpiece W1 is oriented perpendicular to the direction of travel of the scan beam SB (the z3 direction). In other words, the first holding device 40 holds the first workpiece W1 so that the surface to be processed of the first workpiece W1 is oriented not along the horizontal direction. In the example of FIG. 5A, the first holding device 40 holds the first workpiece W1 so that the surface to be processed of the first workpiece W1 is oriented along the vertical direction.

[0074] FIG. 5(b) shows another example of the orientation of the first workpiece W1 during the implantation process in which the scan beam SB is irradiated onto the first workpiece W1. In FIG. 5(b), the first holding device 40 holds the first workpiece W1 so that the surface to be processed of the first workpiece W1 is tilted relative to the vertical direction. In FIG. 5(b), the first holding device 40 holds the first workpiece W1 so that the surface to be processed of the first workpiece W1 is not aligned with the horizontal direction. In FIG. 5(b), the surface to be processed of the first workpiece W1 has a vertical tilt angle β1 with respect to the traveling direction of the scan beam SB (direction z3). The vertical tilt angle β1 indicates the vertical inclination of the incident direction of the scan beam SB with respect to the normal to the surface to be processed of the first workpiece W1. First holding device 40 can adjust vertical tilt angle β1 by adjusting vertical rotation angle φb1 by driving first vertical angle adjustment mechanism 54. First holding device 40 is configured to be able to adjust vertical tilt angle β1 within a range of ±30 degrees or ±60 degrees, for example, during ion implantation.

[0075] FIG. 5(c) shows the orientation of the first workpiece W1 during the transfer process of loading or unloading the first workpiece W1 into or from the first holding device 40. In FIG. 5(c), the first holding device 40 holds the first workpiece W1 with the processing surface of the first workpiece W1 oriented horizontally. In FIG. 5(c), the first holding device 40 lifts the first workpiece W1 using the first lift mechanism 50a so that the first workpiece W1 moves away from the first chuck mechanism 50. This allows the arm of the first transport robot for loading or unloading the first workpiece W1 to be inserted into the gap 50b between the first chuck mechanism 50 and the first workpiece W1. Note that it is not essential that the arm of the first transport robot be inserted into the gap 50b between the first chuck mechanism 50 and the first workpiece W1. The arm of the first transport robot may be configured to support the outer periphery of the first workpiece W1 instead of the back surface of the first workpiece W1. In this case, the gap 50b may be very small.

[0076] 6 to 9 are front views showing an example of the operation of the first holding device 40 and the second holding device 42. FIG. 6 shows a situation in which the first injection process is being performed on the first workpiece W1. In FIG. 6, the first holding device 40 is disposed at the injection position 84, and the second holding device 42 is disposed at the second transfer position 82. The first holding device 40 reciprocates horizontally at the injection position 84 as indicated by the arrow X to perform the injection process on the first workpiece W1. The second holding device 42 lifts up the second workpiece W2 using the second lift mechanism 60a at the second transfer position 82 in order to transport the second workpiece W2 after the injection process through the second transfer port 76. The second holding device 42 receives the second workpiece W2 using the second lift mechanism 60a at the second transfer position 82 in order to transport the second workpiece W2 before the injection process through the second transfer port 76.

[0077] 6, the first holding device 40 holds the first workpiece W1 so that the scan beam SB is irradiated onto the processing surface of the first workpiece W1. The first holding device 40 holds the first workpiece W1 in an orientation where the horizontal tilt angle α1 is zero, as shown in FIG. 4(a), for example. The first holding device 40 holds the first workpiece W1 in an orientation where the vertical tilt angle β1 is zero, as shown in FIG. 5(a), for example. The first holding device 40 may hold the first workpiece W1 in an orientation where the horizontal tilt angle α1 is not zero, as shown in FIG. 4(b). The first holding device 40 may hold the first workpiece W1 in an orientation where the vertical tilt angle β1 is not zero, as shown in FIG. 5(b). The first holding device 40 may hold the first workpiece W1 in an orientation where both the horizontal tilt angle α1 and the vertical tilt angle β1 are not zero.

[0078] 6, the second holding device 42 holds the second workpiece W2 so that it is oriented so that the second workpiece W2 can be loaded or unloaded through the second transfer opening 76. Similar to FIG. 5(c), the second holding device 42 holds the second workpiece W2 with the processing surface of the second workpiece W2 oriented horizontally. The second holding device 42 lifts up the second workpiece W2 using the second lift mechanism 60a, forming a gap 60b between the second chuck mechanism 60 and the second workpiece W2. The second transfer device 72 inserts the arm of the second transfer robot into the gap 60b between the second chuck mechanism 60 and the second workpiece W2, thereby unloading the second workpiece W2 after the injection process. When the second workpiece W2 before injection processing is placed on the second lift mechanism 60a by the arm of the second transport robot, the second holding device 42 releases the lift-up of the second workpiece W2 and holds the second workpiece W2 in the second chuck mechanism 60. After holding the second workpiece W2 before injection processing, the second holding device 42 drives the second vertical angle adjustment mechanism 64 to change the vertical rotation angle φb2 and holds the second workpiece W2 with the processing surface of the second workpiece W2 oriented not along the horizontal direction.

[0079] 7 illustrates a situation in which the first injection process for the first workpiece W1 is switched to the second injection process for the second workpiece W2. That is, the first injection process for the first workpiece W1 is completed and the second injection process for the second workpiece W2 is initiated. In FIG. 7, the first holding device 40 moves from the injection position 84 toward the first transfer position 80 as indicated by arrow F1, and the second holding device 42 moves from the second transfer position 82 toward the injection position 84 as indicated by arrow F2. As shown in FIG. 7, by simultaneously moving the first holding device 40 and the second holding device 42 in the same direction, the time required to switch from the first injection process to the second injection process can be shortened.

[0080] In FIG. 7 , the first holding device 40 and the second holding device 42 can be moved so as to maintain the relative distance d between the first workpiece W1 held by the first holding device 40 and the second workpiece W2 held by the second holding device 42. For example, the relative distance d can be maintained constant by making the movement speeds of the first holding device 40 and the second holding device 42 the same. The first holding device 40 and the second holding device 42 may be moved so as to maintain the relative distance d within a range from a predetermined upper limit to a predetermined lower limit by adjusting the movement speeds of the first holding device 40 and the second holding device 42. In this case, the movement speed of the first holding device 40 may be faster or slower than the movement speed of the second holding device 42. For ion implantation that achieves a uniform dose distribution in the horizontal direction of the workpiece, it is preferable that the relative distance d be as small as possible. For ion implantation that achieves a non-uniform dose distribution in the horizontal direction of the workpiece, it is preferable that the relative distance d be larger than the size of the scan beam SB in the horizontal direction (x3 direction).

[0081] In FIG. 7 , the moving speed of the first holding device 40 holding the first workpiece W1 at the end of the injection process may be the maximum speed that the first holding device 40 can achieve. By moving the first holding device 40 at the maximum speed, the time required from the completion of the first injection process into the first workpiece W1 to the removal of the first workpiece W1 can be shortened, thereby improving productivity. On the other hand, the moving speed of the second holding device 42 holding the second workpiece W2 at the start of the injection process may be determined according to the injection conditions of the second workpiece W2. By moving the second holding device 42 at a moving speed according to the injection conditions, the second injection process into the second workpiece W2 can be started at the same moving speed after the second workpiece W2 has moved to the injection position 84. This allows the start of the second injection process to be accelerated, improving productivity.

[0082] 8 shows a situation in which the second injection process is being performed on the second workpiece W2. In FIG. 8, the second holding device 42 is disposed at an injection position 84, and the first holding device 40 is disposed at a first transfer position 80. The second holding device 42 reciprocates horizontally at the injection position 84 as indicated by the arrow X for the injection process on the second workpiece W2. The first holding device 40 lifts up the first workpiece W1 at the first transfer position 80 using the first lift mechanism 50a to transport the first workpiece W1 after the injection process through the first transfer opening 74. The first holding device 40 receives the first workpiece W1 at the first transfer position 80 using the first lift mechanism 50a to transport the first workpiece W1 before the injection process through the first transfer opening 74.

[0083] In FIG. 8 , the second holding device 42 holds the second workpiece W2 so that the processing surface of the second workpiece W2 is oriented so that the scan beam SB is irradiated onto it. The second holding device 42 holds the second workpiece W2 in an orientation where the horizontal tilt angle α2 is zero, as in FIG. 4( a), for example. The second holding device 42 holds the second workpiece W2 in an orientation where the vertical tilt angle β2 is zero, as in FIG. 5( a). The second holding device 42 may hold the second workpiece W2 in an orientation where the horizontal tilt angle α2 is not zero, as in FIG. 4( b). The second holding device 42 may hold the second workpiece W2 in an orientation where the vertical tilt angle β2 is not zero, as in FIG. 5( b). The second holding device 42 may hold the second workpiece W2 in an orientation where both the horizontal tilt angle α2 and the vertical tilt angle β2 are not zero.

[0084] 8, the first holding device 40 holds the first workpiece W1 so that it is oriented so that it can be loaded or unloaded through the first transfer opening 74. As shown in FIG. 5(c), the first holding device 40 holds the first workpiece W1 so that the processing surface of the first workpiece W1 is oriented horizontally. The first holding device 40 lifts up the first workpiece W1 using the first lift mechanism 50a, forming a gap 50b between the first chuck mechanism 50 and the first workpiece W1. The first transfer device 70 inserts the arm of the first transfer robot into the gap 50b between the first chuck mechanism 50 and the first workpiece W1, thereby unloading the first workpiece W1 after the injection process. When the first workpiece W1 before injection processing is placed on the first lift mechanism 50a by the arm of the first transport robot, the first holding device 40 releases the lift-up of the first workpiece W1 and holds the first workpiece W1 in the first chuck mechanism 50. After holding the first workpiece W1 before injection processing, the first holding device 40 drives the first vertical angle adjustment mechanism 54 to change the vertical rotation angle φb1 and holds the first workpiece W1 with the processing surface of the first workpiece W1 oriented not along the horizontal direction.

[0085] 9 illustrates a situation in which the second injection process for the second workpiece W2 is switched to the first injection process for the first workpiece W1. That is, the second injection process for the second workpiece W2 is completed and the first injection process for the first workpiece W1 is initiated. In FIG. 9, the first holding device 40 moves from the first transfer position 80 toward the injection position 84 as indicated by arrow F3, and the second holding device 42 moves from the injection position 84 toward the second transfer position 82 as indicated by arrow F4. As shown in FIG. 9, by simultaneously moving the first holding device 40 and the second holding device 42 in the same direction, the time required to switch from the second injection process to the first injection process can be shortened.

[0086] 9 , the first holding device 40 and the second holding device 42 can be moved so as to maintain the relative distance d between the first workpiece W1 held by the first holding device 40 and the second workpiece W2 held by the second holding device 42. For example, the relative distance d can be maintained constant by making the movement speeds of the first holding device 40 and the second holding device 42 the same. The movement speeds of the first holding device 40 and the second holding device 42 may be adjusted to move the first holding device 40 and the second holding device 42 so that the relative distance d is maintained within a range from a predetermined upper limit to a predetermined lower limit. In this case, the movement speed of the first holding device 40 may be faster or slower than the movement speed of the second holding device 42. The relative distance d is preferably greater than the size of the scan beam SB in the horizontal direction (x3 direction).

[0087] In FIG. 9 , the moving speed of the second holding device 42 holding the second workpiece W2 at the end of the injection process may be the maximum speed that the second holding device 42 can achieve. By moving the second holding device 42 at the maximum speed, the time required from the completion of the second injection process into the second workpiece W2 to the removal of the second workpiece W2 can be shortened, thereby improving productivity. On the other hand, the moving speed of the first holding device 40 holding the first workpiece W1 at the start of the injection process may be determined according to the injection conditions of the first workpiece W1. By moving the first holding device 40 at a moving speed according to the injection conditions, the first injection process into the first workpiece W1 can be started at the same moving speed after the first workpiece W1 has moved to the injection position 84. This allows the start of the first injection process to be accelerated, improving productivity.

[0088] 10 is a flowchart showing the flow of the ion implantation method according to the embodiment. First, a first workpiece W1 before implantation is loaded into the first holding device 40 (S10). In S10, the first workpiece W1 after implantation held in the first holding device 40 may be unloaded, and then the first workpiece W1 before implantation may be loaded into the first holding device 40. Next, the second holding device 42 is moved to the second transfer position 82 (S12), and the first holding device 40 is moved to the first implantation position (e.g., implantation position 84) (S14). S12 and S14 can be performed simultaneously, or the execution periods of S12 and S14 can be performed so that they at least partially overlap. Next, the first holding device 40 is reciprocated at the first implantation position, and the reciprocating first workpiece W1 is irradiated with an ion beam (S16).

[0089] Before, during, or after S16, the second workpiece W2 before the implantation process is loaded into the second holding device 42 (S18). In S18, the implanted second workpiece W2 held in the second holding device 42 may be unloaded, and then the second workpiece W2 before the implantation process may be loaded into the second holding device 42. Next, the first holding device 40 is moved to the first transfer position 80 (S20), and the second holding device 42 is moved to a second implantation position (e.g., implantation position 84) (S22). S20 and S22 can be performed simultaneously, or the respective execution periods of S20 and S22 can be performed so as to at least partially overlap. Next, the second holding device 42 is reciprocated at the second implantation position, and the reciprocating second workpiece W2 is irradiated with an ion beam (S24).

[0090] The flow shown in FIG. 10 can be repeatedly executed. For example, the process of S10 after the repetition can be executed before, during, or after the execution of S24. Before, during, or after the execution of S24, the first workpiece W1 held in the first holding device 40 that has been subjected to the injection process can be removed, and the first workpiece W1 before the injection process can be carried into the first holding device 40. By repeating the flow shown in FIG. 10, the first injection process for the first workpiece W1 held in the first holding device 40 and the second injection process for the second workpiece W2 held in the second holding device 42 can be alternately and repeatedly executed. The flow shown in FIG. 10 can be repeatedly executed until the injection processes for the multiple workpieces to be continuously processed are completed.

[0091] According to this embodiment, by providing multiple holding devices in the injection treatment chamber 14, the injection process and the transport process of the workpieces can be performed in parallel. For example, the transport process of the second workpiece W2 can be performed by the second holding device 42 simultaneously with the first injection process of the first workpiece W1 held by the first holding device 40. Furthermore, the transport process of the first workpiece W1 can be performed by the first holding device 40 simultaneously with the second injection process of the second workpiece W2 held by the second holding device 42. As a result, the time required for continuous treatment of multiple workpieces can be shortened and productivity can be improved compared to when the injection process and the transport process are performed alternately using a single holding device.

[0092] According to this embodiment, by configuring multiple holding devices to reciprocate horizontally, the configuration of the implantation processing chamber 14 and the transfer device 16 can be made less complex than in a configuration in which multiple holding devices reciprocate vertically. Furthermore, by configuring multiple holding devices to reciprocate horizontally, the vertical dimensions of the implantation processing chamber 14 and the transfer device 16 can be reduced. As a result, it is possible to provide an ion implantation apparatus 10 having an outer size that falls within the height limit of a floor in a typical semiconductor process factory.

[0093] According to this embodiment, by configuring the multiple holding devices to move along the common guide rail 44, the reciprocating movements of the multiple holding devices at the injection position can be standardized. As a result, it is possible to prevent differences in the injection environment caused by using multiple holding devices. As a result, it is possible to improve the productivity of the injection process for multiple workpieces while suppressing variations in the injection process for multiple workpieces.

[0094] According to this embodiment, by scanning the ion beam back and forth in the vertical direction and moving the workpiece back and forth in the horizontal direction, the entire surface of the workpiece can be efficiently irradiated with the scan beam. Furthermore, by deflecting the ion beam horizontally in the mass analysis unit 24 and the energy analysis unit 34, a beamline A can be formed that travels along a horizontal plane, and the vertical size of the beam generator 12 can be reduced.

[0095] According to this embodiment, by forming the front slit 20c of the ion source 20 in a slit shape that is long in the horizontal direction, an ion beam that spreads in the horizontal direction can be generated through the extraction section 22. As a result, it is easier to generate an ion beam with a larger beam current than when a spot-shaped ion beam is extracted from the ion source 20. Furthermore, because the vertical size of the ion beam extracted from the ion source 20 is small, the distance between the opposing magnetic poles of the mass analysis magnet device 24a through which the ion beam passes can be made smaller. As a result, the size of the mass analysis magnet device 24a can be reduced. For example, compared to a comparative example in which the front slit of the ion source is narrowed in the horizontal direction and has a slit shape that is long in the vertical direction, an ion beam with a larger beam current can be generated while reducing the size of the mass analysis magnet device 24a.

[0096] According to this embodiment, by shaping the ion beam expanding in the horizontal direction into a spot shape by the beam shaping unit 26, it is possible to form a spot beam suitable for beam scanning in the vertical direction by the beam scanning unit 28. By scanning the spot beam in the vertical direction by the beam scanning unit 28, it becomes possible to implant ions into a workpiece having a large vertical size. According to this embodiment, a scanned beam with a larger beam current can be irradiated onto a workpiece having a large vertical size, thereby improving the productivity of the implantation process.

[0097] In this embodiment, the direction of application of the magnetic field B1 in the ion source 20 and the direction of application of the magnetic field B2 in the mass analyzer 24 are perpendicular to each other, which increases the possibility that interference between the two will adversely affect beam quality and magnetic field control. On the other hand, in the comparative example in which the direction of application of the magnetic field in the ion source is vertical, the direction of application of the magnetic field in the ion source and the direction of application of the magnetic field in the mass analyzer are parallel, so even if the two magnetic fields interfere with each other to a certain extent, this does not pose a major problem. According to this embodiment, by providing a magnetic shield 23 between the extraction unit 22 and the mass analyzer 24, magnetic field interference between the horizontal magnetic field B1 applied to the ion source 20 and the vertical magnetic field B2 applied to the mass analyzer 24 can be suppressed. This makes it possible to achieve both high plasma generation efficiency in the ion source 20 and high mass analysis accuracy in the mass analyzer 24.

[0098] This embodiment can be applied to ion implantation processing of a workpiece having a large vertical size. An example of a workpiece having a large vertical size is a large substrate used in the manufacture of flat panel displays (FPDs). The vertical and horizontal dimensions of such a large substrate are, for example, 1 m x 2 m or more. It is not practical to move such a large workpiece back and forth in the vertical direction. According to this embodiment, the workpiece is moved back and forth in the horizontal direction, which makes it easier to move the large substrate back and forth compared to moving the workpiece back and forth in the vertical direction. Ion implantation processing of the large substrate can be performed by irradiating the large substrate, which is moved back and forth in the horizontal direction, with a scan beam that is scanned in the vertical direction.

[0099] When the workpiece is a large substrate for an FPD, the ion implantation apparatus 10 does not need to include at least one of the beam collimator 30, the acceleration / deceleration unit 32, and the energy analyzer 34. When the workpiece is a large substrate for an FPD, the implantation chamber 14 may be transported into and out of the implantation chamber 14 by moving the workpiece horizontally. For example, the large substrate before implantation may be transported into the implantation chamber 14 from the right (or left) side, moved left (or right) in the implantation chamber 14 to perform ion implantation, and the large substrate after implantation may be transported out from the left (or right) side of the implantation chamber 14. In this way, the ion implantation apparatus 10 may continuously process large substrates in-line.

[0100] 11 is a flowchart showing the flow of an ion implantation method according to a modified example, in which a first implantation step for a first workpiece W1 and a second implantation step for a second workpiece W2 are carried out in parallel.

[0101] First, the first workpiece W1 before the injection process is carried into the first holding device 40 (S30). In S30, the first workpiece W1 after the injection process held in the first holding device 40 may be carried out, and then the first workpiece W1 before the injection process may be carried into the first holding device 40. Alternatively, the second workpiece W2 before the injection process is carried into the second holding device 42 (S32). In S32, the second workpiece W2 after the injection process held in the second holding device 42 may be carried out, and then the second workpiece W2 before the injection process may be carried into the second holding device 42. The order of steps S30 and S32 does not matter; S32 may be started after S30 starts, or S30 may be started after S32 starts. Steps S30 and S32 may be performed simultaneously.

[0102] Next, the first holding device 40 is moved to a first implantation position (e.g., implantation position 84) (S34). The first holding device 40 is reciprocated at the first implantation position, thereby irradiating the reciprocating first workpiece W1 with an ion beam (S36). The number of reciprocating movements of the first workpiece W1 in S36 is not particularly limited, but may be, for example, only one reciprocation. Thereafter, the first holding device 40 is retracted from the first implantation position (S38), and the second holding device 42 is moved to a second implantation position (e.g., implantation position 84) (S40). The first retraction position to which the first holding device 40 is retracted is, for example, located between the first transfer position 80 and the first implantation position. The first retraction position to which the first holding device 40 is retracted may be the same as the first transfer position 80.

[0103] Next, the second holding device 42 is reciprocated at the second implantation position, thereby irradiating the reciprocating second workpiece W2 with an ion beam (S42). The number of reciprocating movements of the second workpiece W2 in S42 is not particularly limited, but may be, for example, only one reciprocation. Thereafter, the second holding device 42 is retracted from the second implantation position (S44). The second retraction position to which the second holding device 42 is retracted is, for example, located between the second transfer position 82 and the second implantation position. The second retraction position to which the second holding device 42 is retracted may be the same as the second transfer position 82.

[0104] If the implantation process for the first workpiece W1 and the second workpiece W2 is not complete (N in S46), steps S34 to S44 are repeated until the implantation process is complete. For example, if the number of reciprocating movements required to complete the implantation process for the first workpiece W1 and the second workpiece W2 is three (i.e., three round trips), steps S34 to S44 are repeated three times. In this case, the step of irradiating the ion beam by making one round trip of the first workpiece W1 and the step of irradiating the ion beam by making one round trip of the second workpiece W2 are alternately performed three times each. In this case, steps S38 and S40 can be performed simultaneously by minimizing the relative distance d between the first workpiece W1 and the second workpiece W2, and steps S44 and S34 can be performed simultaneously by minimizing the relative distance d between the first workpiece W1 and the second workpiece W2. In other words, the first workpiece W1 and the second workpiece W2 can be moved back and forth in the same direction in synchronization while maintaining the relative distance d between them as small as possible, thereby improving the utilization efficiency of the ion beam.

[0105] If the injection process is completed in S46 (Y in S46), the first holding device 40 is moved to the first transfer position 80 (S48), and the second holding device 42 is moved to the second transfer position 82 (S50). The order of steps S48 and S50 does not matter; S50 may be started after S48, or S48 may be started after S50. Steps S48 and S50 may be executed simultaneously. Furthermore, if the first retraction position is the first transfer position 80, step S48 may be omitted because the first holding device 40 is already positioned at the first transfer position 80 in step S38. Similarly, if the second retraction position is the second transfer position 82, step S50 may be omitted because the second holding device 42 is already positioned at the second transfer position 82 in step S44.

[0106] The flow shown in FIG. 11 can be repeatedly executed until the implantation process for multiple workpieces to be processed consecutively is completed. According to the flow shown in FIG. 11 , the first transfer process of loading and unloading the first workpiece W1 into and out of the first holding device 40 and the second transfer process of loading and unloading the second workpiece W2 into and out of the second holding device 42 can be executed simultaneously, thereby improving productivity. The flow shown in FIG. 11 is preferably applied when the implantation time during which the workpiece is irradiated with an ion beam is sufficiently short (e.g., less than half) compared to the transport time required for loading and unloading the workpiece. The flow shown in FIG. 11 is also preferably applied when the implantation time during which the workpiece is irradiated with an ion beam is sufficiently long (e.g., more than twice as long) compared to the transport time required for loading and unloading the workpiece. The flow shown in FIG. 11 can also be applied when the implantation time during which the workpiece is irradiated with an ion beam is approximately the same as the transport time required for loading and unloading the workpiece. In this case, the flow shown in FIG. 10 may be more productive.

[0107] In the above-described embodiment, the beam generating device 12 generates a scanned beam using the beam scanning unit 28 and the beam collimating unit 30. In another embodiment, the beam generating device may generate a ribbon beam. The beam generating device may include a ribbon beam generating unit instead of the beam scanning unit 28. The ribbon beam generating unit generates a ribbon beam by diverging a spot-shaped ion beam in the vertical direction. The ribbon beam generating unit may be configured by an electric field type or magnetic field type beam diverging device.

[0108] In the above-described embodiment, the ion beam extracted from the ion source 20 is a ribbon-shaped beam that expands in the horizontal direction. In another embodiment, the ion beam extracted from the ion source may be a ribbon beam that expands in the vertical direction. In this case, the front slit of the ion source has a slit shape with a long vertical opening width and a short horizontal opening width. Similarly, the extraction electrode of the extraction unit has a slit shape with a long vertical opening width and a short horizontal opening width. In this case, the mass analysis unit is configured to deflect the ribbon beam that expands in the vertical direction in the horizontal direction. In this case, the beam generator does not need to include the beam scanning unit 28 and the beam collimating unit 30. In this case, the ion source and the extraction unit can be considered as a ribbon beam generating unit for generating a ribbon beam that expands in the vertical direction.

[0109] In the other embodiment described above, the size of the vertical irradiation range of the ribbon beam expanded in the vertical direction is larger than the vertical size of the workpiece. Therefore, the beam generating device that generates the ribbon beam is configured to irradiate the ion beam over an irradiation range whose size in the vertical direction is larger than the size of the processing surface of the workpiece. Note that in the above embodiment, the beam generating device 12 that generates the scan beam is configured to irradiate the ion beam over an irradiation range whose size in the vertical direction is larger than the size of the processing surface of the workpiece.

[0110] The above-described embodiment illustrates the case where multiple holding devices 40, 42 are provided in the implantation process chamber 14. In another embodiment, only a single holding device may be provided in the implantation process chamber 14. The single holding device may be configured similarly to either the first holding device 40 or the second holding device 42 described above.

[0111] In the above-described embodiment, the scanning direction of the scan beam SB is vertical. In another embodiment, the scanning direction of the scan beam SB may be configured to be inclined relative to the vertical. In this case, the beam scanning unit 28, the beam collimating unit 30, the acceleration / deceleration unit 32, and the energy analysis unit 34 are arranged at positions rotated (i.e., tilted) around the beam line A extending in the z2 direction (e.g., downstream of the mass analysis unit 24 and upstream of the beam scanning unit 28) as the rotation axis. Note that it is also possible to arrange the beam scanning unit 28 and the beam collimating unit 30 alone to rotate, while at least one of the acceleration / deceleration unit 32 and the energy analysis unit 34 is not rotated. In this case, the scanning direction of the scan beam SB is preferably within 45 degrees from the vertical.

[0112] In the above-described embodiment, the first holding device 40 and the second holding device 42 move in the horizontal direction. In another embodiment, the movement direction of the first holding device 40 and the second holding device 42 does not have to be horizontal, and may be inclined relative to the horizontal direction. The movement direction of the first holding device 40 and the second holding device 42 may be a direction different from the horizontal direction and may be any direction that crosses the scan beam.

[0113] Certain aspects of the present disclosure are as follows: (Item 1) An ion implantation apparatus comprising: an ion source that generates ions; an extraction unit that extracts the ions from the ion source to generate an ion beam; a beam scanning unit configured to scan the ion beam back and forth in a scan direction different from a horizontal direction to generate a scan beam; and a holding device configured to hold a workpiece, the holding device being configured to move the workpiece held by the holding device back and forth in a direction crossing the scan beam. (Item 2) The ion implantation apparatus according to Item 1, wherein the holding device moves the workpiece held by the holding device back and forth in the horizontal direction. (Item 3) The ion implantation apparatus according to Item 1 or 2, wherein the scan direction is a direction within 45 degrees of the vertical direction. (Item 4) The ion implantation apparatus according to Item 1 or 2, wherein the scan direction is a vertical direction. (Item 5) The ion implanter according to any one of Items 1 to 4, wherein the ion source includes a front slit through which the ions extracted by the extraction unit pass, and the horizontal opening width of the front slit is larger than the vertical opening width of the front slit. (Item 6) The ion implanter according to Item 5, wherein the ion source includes: an arc chamber having an internal space and the front slit for extracting the ions from plasma generated in the internal space; and a magnet device that applies a magnetic field in the horizontal direction to the internal space. (Item 7) The ion implanter according to Item 5 or 6, wherein the extraction unit includes an extraction electrode having an extraction opening through which the ion beam passes, and the horizontal opening width of the extraction opening is larger than the vertical opening width of the extraction opening. (Item 8) The ion implanter according to any one of Items 1 to 7, further including a mass analysis unit that is provided between the extraction unit and the beam scanning unit and that deflects the ion beam in the horizontal direction. (Item 9) The ion implantation device according to Item 8, wherein the mass analysis unit includes a magnet device that applies a magnetic field to the ion beam in a vertical direction. (Item 10) The ion implantation device according to Item 8 or Item 9, further including a magnetic shield that is provided between the extraction unit and the mass analysis unit and has a passage opening through which the ion beam passes.(Item 11) The ion implanter according to any one of Items 8 to 10, further comprising a beam shaping unit provided between the mass analysis unit and the beam scanning unit, the beam shaping unit including at least one lens device for adjusting at least one of the cross-sectional shape and convergence / divergence angle of the ion beam. (Item 12) The ion implanter according to any one of Items 1 to 11, further comprising a beam collimating unit provided downstream of the beam scanning unit for collimating the scan beam. (Item 13) The ion implanter according to any one of Items 1 to 12, further comprising an energy analysis unit including a deflection unit for deflecting the scan beam in the horizontal direction and an energy analysis slit provided downstream of the deflection unit. (Item 14) The ion implanter according to Item 13, wherein the deflection unit includes a pair of electrodes facing each other across the scan beam, and a power supply for applying a DC voltage to the pair of electrodes. (Item 15) The ion implanter according to Item 14, wherein the pair of electrodes of the deflection unit are arranged to face each other in the horizontal direction. (Item 16) The ion implantation apparatus according to Item 14, wherein the electrode pair of the deflection device is arranged to face each other in a direction perpendicular to the scanning direction. (Item 17) An ion implantation method comprising: generating ions using an ion source; extracting the ions from the ion source to generate an ion beam; scanning the ion beam back and forth in a scanning direction different from a horizontal direction to generate a scan beam; and moving a workpiece back and forth in a direction crossing the scan beam.

[0114] An aspect of the present disclosure is as follows: (Item 18) An ion implantation apparatus including: a beam generating device configured to generate an ion beam to be irradiated onto a workpiece, and to irradiate the ion beam over an irradiation range whose size in a vertical direction is larger than the size of a surface to be processed of the workpiece, a first holding device configured to be able to hold a first workpiece, and configured to move the first workpiece held by the first holding device back and forth in a horizontal direction so that the first workpiece crosses the irradiation range, and a second holding device configured to hold a second workpiece, and configured to move the second workpiece held by the second holding device back and forth in the horizontal direction so that the second workpiece crosses the irradiation range. (Item 19) The ion implantation apparatus according to Item 18, wherein the first holding device is configured to be movable between a first implantation position for irradiating the first workpiece with the ion beam and a first transfer position for loading the first workpiece into or unloading the first holding device, and the second holding device is configured to be movable between a second implantation position for irradiating the second workpiece with the ion beam and a second transfer position for loading the second workpiece into or unloading the second holding device. (Item 20) The ion implantation apparatus according to Item 19, wherein the first implantation position and the second implantation position are located between the first transfer position and the second transfer position. (Item 21) The ion implantation apparatus according to Item 19 or 20, wherein a first movement range in which the first holding device reciprocates the first workpiece at the first implantation position overlaps with a second movement range in which the second holding device reciprocates the second workpiece at the second implantation position, as viewed in the beam traveling direction. (Item 22) The ion implantation apparatus according to item 21, wherein the first movement range is common to the second movement range. (Item 23) The ion implantation apparatus according to any one of items 19 to 22, wherein the vertical position of the first workpiece held by the first holding device at the first implantation position is common to the vertical position of the second workpiece held by the second holding device at the second implantation position.(Item 24) The ion implantation apparatus according to any one of Items 19 to 23, wherein the position in the beam traveling direction of the first workpiece held by the first holding device at the first implantation position is the same as the position in the beam traveling direction of the second workpiece held by the second holding device at the second implantation position. (Item 25) The ion implantation apparatus according to any one of Items 19 to 24, wherein the first holding device is configured to be immovable to the second transfer position, and the second holding device is configured to be immovable to the first transfer position. (Item 26) The ion implantation apparatus according to any one of Items 18 to 25, wherein the first holding device and the second holding device are movable in the same direction. (Item 27) The ion implantation apparatus according to any one of Items 18 to 26, wherein the first holding device and the second holding device are simultaneously movable in the same direction while maintaining the relative distance between the first workpiece held by the first holding device and the second workpiece held by the second holding device. (Item 28) The ion implantation apparatus according to any one of Items 18 to 27, wherein the first holding device and the second holding device are movable along a common guide rail. (Item 29) The ion implantation apparatus according to any one of Items 18 to 28, wherein the first holding device comprises a first vertical angle adjustment mechanism that adjusts the vertical orientation of the first workpiece and a first horizontal angle adjustment mechanism that adjusts the horizontal orientation of the first workpiece, and the second holding device comprises a second vertical angle adjustment mechanism that adjusts the vertical orientation of the second workpiece and a second horizontal angle adjustment mechanism that adjusts the horizontal orientation of the second workpiece. (Item 30) An ion implantation apparatus described in any one of Items 18 to 28, wherein the first holding device comprises a first vertical angle adjustment mechanism that rotates around the horizontal rotation axis to adjust the orientation of the first workpiece, and a first horizontal angle adjustment mechanism that rotates around the vertical rotation axis to adjust the orientation of the first workpiece, and the second holding device comprises a second vertical angle adjustment mechanism that rotates around the horizontal rotation axis to adjust the orientation of the second workpiece, and a second horizontal angle adjustment mechanism that rotates around the vertical rotation axis to adjust the orientation of the second workpiece.(Item 31) The ion implantation apparatus described in any one of Items 18 to 28, wherein the first holding device is provided with a first vertical angle adjustment mechanism that adjusts the orientation of the first workpiece, and the first vertical angle adjustment mechanism is configured to adjust the orientation of the processing surface of the first workpiece to be along the horizontal direction when the first workpiece is loaded or unloaded, and to adjust the orientation of the processing surface of the first workpiece to be not along the horizontal direction when the first workpiece is irradiated with the ion beam; and the second holding device is provided with a second vertical angle adjustment mechanism that adjusts the orientation of the second workpiece, and the second vertical angle adjustment mechanism is configured to adjust the orientation of the processing surface of the second workpiece to be along the horizontal direction when the second workpiece is loaded or unloaded, and to adjust the orientation of the processing surface of the second workpiece to be not along the horizontal direction when the second workpiece is irradiated with the ion beam. (Item 32) The ion implantation apparatus according to any one of Items 18 to 31, wherein the first holding device comprises a first horizontal angle adjustment mechanism that adjusts the horizontal orientation of the first workpiece and a first twist mechanism that adjusts the twist angle of the first workpiece, and the second holding device comprises a second horizontal angle adjustment mechanism that adjusts the horizontal orientation of the second workpiece and a second twist mechanism that adjusts the twist angle of the second workpiece. (Item 33) The ion implantation apparatus according to any one of Items 18 to 32, wherein the beam generation device comprises a beam scanning unit that scans the ion beam back and forth across the irradiation range. (Item 34) The ion implantation apparatus according to any one of Items 18 to 32, wherein the beam generation device comprises a ribbon beam generation unit that generates a ribbon beam having a beam size corresponding to the size of the irradiation range.(Item 35) An ion implantation method comprising: generating an ion beam to be irradiated onto a workpiece; irradiating the ion beam over an irradiation range whose size in the vertical direction is larger than the size of the surface to be processed of the workpiece; holding a first workpiece in a first holding device; using the first holding device to move the first workpiece back and forth in a horizontal direction so that the first workpiece crosses the irradiation range; holding a second workpiece in a second holding device; and using the second holding device to move the second workpiece back and forth in the horizontal direction so that the second workpiece crosses the irradiation range.

[0115] Fig. 12 is a top view showing a schematic configuration of an ion implantation apparatus 10A according to another embodiment. Fig. 13 is a side view showing a schematic configuration of an ion implantation apparatus 10A according to another embodiment. The ion implantation apparatus 10A shown in Figs. 12 and 13 differs from the ion implantation apparatus 10 shown in Figs. 1 and 2 in that it further includes a beam profiler 46 provided in the implantation processing chamber 14. The ion implantation apparatus 10A will be described below, focusing on differences from the above-described embodiment, and description of commonalities will be omitted as appropriate.

[0116] The beam profiler 46 is provided inside the implantation processing chamber 14. The beam profiler 46 is a beam measurement device for measuring the scan beam SB at the surface position of the workpieces W1 and W2. The beam profiler 46 is configured to be movable in the vertical direction (y direction) by the operation of a profiler driving device 47. The beam profiler 46 is retracted from the implantation position where the workpiece W1 or W2 is located during ion implantation, and is inserted into the implantation position when the workpiece W1 or W2 is not at the implantation position.

[0117] 14 is a front view showing a schematic view of the movable range of the beam profiler 46, and is obtained by adding the beam profiler 46 to the above-mentioned FIG. 3. FIG. 14 shows the beam profiler 46 inserted at the implantation position. The beam profiler 46 is movable in the vertical direction (y direction) as indicated by the arrow H by the operation of the profiler driver 47. The beam profiler 46 can be moved in the vertical direction (y direction) as indicated by the arrow H by the operation of the profiler driver 47. For example, the size h of the irradiation range of the scanning beam SB in the vertical direction is Ｂ and is configured to be movable between an upper end position 46a vertically above the scan beam SB and a lower end position 46b vertically below the scan beam SB. When the beam profiler 46 is retracted from the implantation position, the beam profiler 46 is disposed at the upper end position 46a, for example.

[0118] The beam profiler 46 includes a profiler cup, which is a Faraday cup for measuring the beam current of the scanning beam SB. The beam profiler 46 measures the beam current while moving in the vertical direction (y direction), thereby measuring the beam current over the entire beam scanning range of the scanning beam SB. The beam profiler 46 may be a measurement device that measures the beam current density distribution of the scanning beam SB in the vertical direction (y direction).

[0119] The beam profiler 46 may include an angle measurement device for measuring angular information of the scan beam SB. The angle measurement device may include a first angle measurement device capable of measuring angular information in the horizontal direction (x direction) of the scan beam SB, and a second angle measurement device capable of measuring angular information in the vertical direction (y direction) of the scan beam SB. The beam profiler 46 may be a measurement device that measures angular information in the x direction and angular information in the y direction, and may measure, as the angular information, an angular center of gravity, a convergence / divergence angle, or the like.

[0120] Angle measurement devices that can be used in the beam profiler 46 will now be described.

[0121] (First embodiment) Fig. 15 is a cross-sectional view showing a schematic configuration of an angle measurement device 100 according to a first embodiment. The angle measurement device 100 is configured to measure angular information of a scan beam SB in a first direction. Fig. 15 shows a case where the first direction is parallel to the scan direction (y direction), but the direction of the angular information measured by the angle measurement device 100 (i.e., the first direction) is not particularly limited, and the first direction may be oblique to the scan direction.

[0122] The angle measurement device 100 includes an entrance surface 104 having an entrance aperture 102 , an exit surface 108 having an exit aperture 106 , an electrode assembly 110 , a power supply 112 , and a current measurement device 114 .

[0123] The angle measurement device 100 may include a front plate 116 having an incident surface 104. The incident aperture 102 is formed to penetrate the front plate 116. The incident aperture 102 passes a portion of the scan beam SB incident on the incident surface 104. The incident aperture 102 has an aperture shape with a short aperture width in at least a first direction.

[0124] The angle measurement device 100 may include a back plate 118 having an exit surface 108. The back plate 118 is disposed away from the front plate 116 in the traveling direction of the scan beam SB (i.e., the z direction). The exit aperture 106 is formed to penetrate the back plate 118. The exit aperture 106 passes a portion of the ion beam that has passed through the entrance aperture 102. Similar to the entrance aperture 102, the exit aperture 106 has an aperture shape with a short opening width in at least a first direction. The exit aperture 106 is disposed, for example, such that its position in the x direction and y direction orthogonal to the traveling direction (z direction) of the scan beam SB coincides with that of the entrance aperture 102.

[0125] 16(a) is a plan view showing a schematic configuration of an incident surface 104 having an incident aperture 102, and FIG. 16(b) is a plan view showing a schematic configuration of an exit surface 108 having an exit aperture 106. The incident aperture 102 can have a slit shape in which an opening width w1 in a first direction (e.g., the y direction) is short and an opening width w2 in a direction perpendicular to the first direction (e.g., the x direction) is long. The incident aperture 102 is, for example, a slit having a slit width direction parallel to the scanning direction of the scan beam SB.

[0126] The opening width w1 of the entrance aperture 102 in the slit width direction is, for example, 10 mm or less, 5 mm or less, or 3 mm or less. The opening width w1 of the entrance aperture 102 in the slit width direction is, for example, 0.1 mm or more, 0.5 mm or more, or 1 mm or more. The opening width w2 of the entrance aperture 102 in the slit length direction perpendicular to the first direction is longer than, for example, the beam width of the scan beam SB in the x direction. The opening width w2 of the entrance aperture 102 in the slit length direction is, for example, 10 mm or more, 20 mm or more, or 30 mm or more. The opening width w2 of the entrance aperture 102 in the slit length direction is, for example, 200 mm or less, 150 mm or less, or 100 mm or less.

[0127] The exit aperture 106 can have the same shape and size as the entrance aperture 102. The exit aperture 106 is, for example, a slit having a slit width direction parallel to the scan direction of the scan beam SB. The opening width w3 of the exit aperture 106 in the slit width direction may be the same as the opening width w1 of the entrance aperture 102 in the slit width direction. The opening width w4 of the exit aperture 106 in the slit length direction may be the same as the opening width w2 of the entrance aperture 102 in the slit length direction.

[0128] The aperture width w2 of the entrance aperture 102 in a direction perpendicular to the first direction may be shorter than the beam width of the scan beam SB. The aperture width w2 of the entrance aperture 102 in a direction perpendicular to the first direction may be approximately equal to the aperture width w1 of the entrance aperture 102 in the first direction. In this case, the aperture shape of the entrance aperture 102 may be rectangular or circular rather than slit-shaped. Similarly, the aperture width w4 of the exit aperture 106 in a direction perpendicular to the first direction may be shorter than the beam width of the scan beam SB in the direction perpendicular to the first direction. The aperture width w4 of the exit aperture 106 in a direction perpendicular to the first direction may be approximately equal to the aperture width w3 of the exit aperture 106 in the first direction. In this case, the aperture shape of the exit aperture 106 may be rectangular or circular rather than slit-shaped.

[0129] Returning to FIG. 15 , the electrode assembly 110 is disposed between the incident surface 104 and the exit surface 108. The electrode assembly 110 has a first electrode surface 122 and a second electrode surface 124 that face each other in a first direction across the ion beam traveling from the incident aperture 102 to the exit aperture 106. The first electrode surface 122 and the second electrode surface 124 face each other parallel to each other. The facing distance d between the first electrode surface 122 and the second electrode surface 124 in the first direction is sufficiently larger than the opening widths w1 and w3 of the incident aperture 102 and the incident surface 104 in the first direction. Here, "sufficiently larger" means large enough not to impede the transport of the ion beam from the incident aperture 102 to the exit aperture 106. The facing distance d between the first electrode surface 122 and the second electrode surface 124 in the first direction is, for example, 5 mm or more, 10 mm or more, or 15 mm or more. The opposing distance d in the first direction between the first electrode surface 122 and the second electrode surface 124 is, for example, 50 mm or less, 30 mm or less, or 20 mm or less.

[0130] The electrode assembly 110 may include a first electrode body 126 having a first electrode surface 122 and a second electrode body 128 having a second electrode surface 124. A side plate 120 for enclosing the first electrode body 126 and the second electrode body 128 may be provided around the electrode assembly 110. The side plate 120 may be configured to extend in a cylindrical shape from the front plate 116 toward the rear plate 118. The front plate 116, the rear plate 118, and the side plate 120 may form a housing that houses the electrode assembly 110. The front plate 116, the rear plate 118, and the side plate 120 may be grounded and have a ground potential.

[0131] The power supply 112 applies a voltage to the electrode assembly 110, generating a potential difference ΔV between the first electrode surface 122 and the second electrode surface 124. The power supply 112 is a variable voltage source, allowing the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 to be variable. The power supply 112 may include a first power supply 130 coupled to the first electrode surface 122 or the first electrode body 126, and a second power supply 132 coupled to the second electrode surface 124 or the second electrode body 128. The power supply 112 may include only one of the first power supply 130 or the second power supply 132. In this case, the electrode surface or electrode body to which the first power supply 130 or the second power supply 132 is not coupled may be grounded and have ground potential.

[0132] The power supply 112 applies a voltage such that the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 is, for example, at most 500 V, 1000 V, or 2000 V. Each of the first power supply 130 and the second power supply 132 is configured to be able to apply a voltage with an absolute value of, for example, up to 1000 V. For example, by setting the applied voltage of the first power supply 130 to −1000 V and the applied voltage of the second power supply 132 to +1000 V, the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 can be 2000 V. The power supply 112 changes the applied voltage based on, for example, a command value from the control device 18.

[0133] The electrode assembly 110 and the power supply 112 function as a deflection device that deflects the ion beam from the entrance aperture 102 toward the exit aperture 106. FIG. 15 shows trajectories 151, 152, and 153 of an ion beam deflected by an electric field E caused by a potential difference ΔV between the first electrode surface 122 and the second electrode surface 124. The magnitude of the electric field E can be expressed as E=ΔV / d, where ΔV is the potential difference between the first electrode surface 122 and the second electrode surface 124 and d is the opposing distance between them. The trajectory 151 shown by a thick line represents an ion beam that can pass through both the entrance aperture 102 and the exit aperture 106. The trajectories 152 and 153 shown by thin lines represent ion beams that cannot pass through the exit aperture 106 and are blocked by the exit surface 108 or the back plate 118. The ion beam along the trajectory 152 cannot pass through the exit aperture 106 because the angle θy in the first direction is slightly larger than that of the ion beam along the trajectory 151. Furthermore, the ion beam along the trajectory 153 cannot pass through the exit aperture 106 because the angle θy in the first direction is slightly smaller than that of the ion beam along the trajectory 151. Therefore, the ion beams that are extracted from the exit aperture 106 are limited to those whose angle θy in the first direction at the entrance aperture 102 is within a specific range.

[0134] The angle θy of the ion beam ejected from the exit aperture 106 in the first direction at the entrance aperture 102 changes depending on the electric field E, i.e., the potential difference ΔV, between the first electrode surface 122 and the second electrode surface 124. Therefore, by changing the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124, the angle θy of the ion beam ejected from the exit aperture 106 in the first direction at the entrance aperture 102 can be changed.

[0135] The current measuring device 114 detects the ion beam that has passed through the exit aperture 106 and measures the beam current value. The current measuring device 114 includes a Faraday cup 134 for detecting the ion beam and an ammeter 136 coupled to the Faraday cup 134. The current measuring device 114 may further include a suppression electrode 138 disposed between the exit surface 108 and the Faraday cup 134. The suppression electrode 138 is coupled to a suppression power supply 140 for applying a predetermined suppression voltage. The suppression electrode 138 has a passage opening 142 that passes the ion beam traveling from the exit aperture 106 toward the Faraday cup 134. The passage opening 142 has an opening shape that is sufficiently larger than the exit aperture 106 so as not to block the ion beam traveling from the exit aperture 106 toward the Faraday cup 134. It should be noted that instead of the configuration in which a suppression electric field is applied to suppress the movement of electrons, a configuration in which a suppression magnetic field is applied to suppress the movement of electrons may be employed.

[0136] The angle measurement device 100 may further include a measurement control device 144. The measurement control device 144 includes a processor 144a and a memory 144b. For example, the measurement control device 144 controls the overall operation of the angle measurement device 100 in accordance with a predetermined program stored in the memory 144b by the processor 144a executing the predetermined program. The measurement control device 144 may be configured in the same manner as the above-mentioned control device 18, for example. The operation of the angle measurement device 100 may be controlled by the control device 18 in addition to or instead of the measurement control device 144.

[0137] The measurement control device 144 outputs a command value for setting the applied voltage of the power supply 112. For example, the measurement control device 144 outputs a command value for applying a variable voltage to the electrode assembly 110, thereby changing the value of the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 over time. For example, the measurement control device 144 may output a command value for periodically changing the value of the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124. The measurement control device 144 may output a command value indicating the time series value of the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124.

[0138] The measurement control device 144 acquires the beam current value I measured by the current measuring device 114. The measurement control device 144 calculates angular information of the scan beam SB in the first direction using the value of the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 based on the command value and the acquired beam current value I. The measurement control device 144 calculates the angle θy in the first direction of the ion beam detected by the current measuring device 114 at the entrance aperture 102, for example, using the beam energy of the scan beam SB and the value of the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124. The measurement control device 144 calculates the intensity of the angular component of the scan beam SB in the first direction by correlating the calculated angle θy with the acquired beam current value. The measurement control device 144 can calculate the angular distribution of the scan beam SB in the first direction by associating multiple values ​​of potential differences ΔVi (i = 1 to n) between the first electrode surface 122 and the second electrode surface 124 with multiple beam current values ​​Ii (i = 1 to n) corresponding to the multiple values ​​of potential differences ΔVi.

[0139] The measurement control device 144 may change the value of the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 in accordance with the scan period Ts of the scan beam SB. The measurement control device 144 may fix the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 at the timing when the scan beam SB is incident on the angle measurement device 100 (specifically, the incident surface 104). In other words, the measurement control device 144 may change the potential difference ΔV between the first electrode surface 122 and the second electrode surface 124 at the timing when the scan beam SB is not incident on the angle measurement device 100 (specifically, the incident surface 104).

[0140] 17 is a graph showing an example of the scan voltage waveform Vs(t) of the scan beam SB and the time waveform ΔV(t) of the potential difference in the angle measurement device 100. The vertical axis of the graph represents the voltage value V, and Vmax is obtained by normalizing the maximum absolute values ​​of the scan voltage Vs and the potential difference ΔV. The scan frequency fs (=1 / Ts) corresponding to the scan period Ts of the scan voltage waveform Vs(t) is, for example, 10 Hz or more or 100 Hz or more, and is, for example, 100 kHz or less or 10 kHz or less. An example of the scan frequency fs is 1 kHz.

[0141] 17 , black circles represent measurement timings tj (for example, j=1 to 2n) at which the scan beam SB is incident on the angle measurement device 100. In the example of FIG. 17 , the angle measurement device 100 is positioned at the center of the scan direction (i.e., the y direction) of the scan beam SB, and the scan beam SB is incident on the angle measurement device 100 when the scan voltage Vs=0. Note that the position of the angle measurement device 100 is not particularly limited, and the angle measurement device 100 may be disposed so that the scan beam SB is incident on the angle measurement device 100 at a timing when the scan voltage Vs becomes a specific value other than 0.

[0142] The time waveform ΔV(t) of the potential difference in the angle measurement device 100 changes stepwise in response to the scan period Ts. The value of the potential difference ΔV(t) is fixed at measurement timing tj when the scan beam SB is incident on the angle measurement device 100, and is changed at timing different from the measurement timing tj. In the example of FIG. 17 , the value of the potential difference ΔV is changed at timing when the scan voltage Vs = -Vmax. Note that the timing when the value of the potential difference ΔV is changed is not particularly limited, and any timing different from the measurement timing tj can be selected, and it may be, for example, timing when the scan voltage Vs = +Vmax.

[0143] In the example of FIG. 17 , the value of the potential difference ΔV is changed for each scan period Ts, and 15 voltage levels are set from −Vmax to +Vmax. While the example of FIG. 17 only shows the process of the potential difference ΔV changing from −Vmax to +Vmax, the potential difference ΔV may be changed conversely from Vmax to −Vmax, or from −Vmax to +Vmax and then from +Vmax to −Vmax. Alternatively, the potential difference ΔV may be repeatedly changed between −Vmax and +Vmax. The time it takes for the potential difference ΔV to change from −Vmax to +Vmax corresponds to half (Td / 2) of the deflection period Td during which the potential difference ΔV is changed. In the example of FIG. 17 , the deflection period Td is 28 times the scan period Ts (i.e., Td = 28 × Ts). Therefore, the deflection frequency fd (=1 / Td) corresponding to the deflection period Td is 1 / 28 of the scan frequency fs.

[0144] The number of voltage value steps set in the time waveform ΔV(t) of the potential difference is not particularly limited, and can be, for example, 10 or more, 15 or more, or 20 or more, or, for example, 100 or less, 50 or less, or 30 or less. Increasing the number of steps can improve measurement accuracy (e.g., angular resolution), but increases the time required for measurement. Therefore, the number of steps in the time waveform ΔV(t) of the potential difference can be appropriately set depending on the required balance between angular resolution and measurement time. Furthermore, instead of changing the value of the potential difference ΔV every scan period Ts, the value of the potential difference ΔV may be changed every half of the scan period Ts. In this case, the time required for measurement can be shortened. Alternatively, the value of the potential difference ΔV may be changed every integer multiple of the scan period Ts (e.g., k·Ts). In this case, the number of measurements of the scan beam SB in one step increases, thereby improving measurement accuracy. The deflection frequency fd can be set to, for example, 1 / 1000 or more, 1 / 500 or more, or 1 / 200 or more of the scan frequency fs, or, for example, 1 / 10 or less, 1 / 20 or less, or 1 / 50 or less of the scan frequency fs. An example of the deflection frequency fd is about 1 / 100 of the scan frequency fs, for example, about 10 Hz. It is preferable that the deflection frequency fd be set to be different from the scan frequency fs.

[0145] FIG. 18( a) is a graph showing an example of a time waveform I(t) of a beam current detected by the angle measurement device 100. FIG. 18( a) corresponds to the time waveform I(t) of the beam current when the time waveform of the potential difference ΔV shown in FIG. 17 is applied. The time waveform I(t) of the beam current is composed of time series values ​​of a pulsed beam current Ij measured at each of a plurality of measurement timings tj. In the example of FIG. 18( a), the scan beam SB enters the angle measurement device 100 once in a round trip (two times in total) while the value of the potential difference ΔVi (= ΔV(t)) is fixed. Therefore, two pulsed beam currents Ij are measured for a specific value of the potential difference ΔVi. By using these two beam current values ​​Ij, for example, by summing or averaging them, a beam current value Ii corresponding to a specific value of the potential difference ΔVi can be obtained. Furthermore, by converting the potential difference ΔVi to an angle θyi, a beam current value Ii corresponding to the angle θyi can be obtained. FIG. 18(b) is a graph showing an example of the angular distribution of the scan beam calculated using the time waveform I(t) of the beam current in FIG. 18(a). For example, an angular distribution such as that shown by the dashed line 156 can be calculated.

[0146] According to this embodiment, angular information of the scan beam SB in the first direction can be obtained with high accuracy in a short time. The scan beam SB incident on the angle measurement device 100 is scanned back and forth by the beam scanning unit 28 (also referred to as a beam scanning device) arranged upstream of the angle measurement device 100, so the entire beam can be measured without moving the angle measurement device 100. Furthermore, the deflection period Td required to obtain the angular distribution can be set to 1 second or less or 0.1 seconds or less, so the angular distribution of the scan beam SB in the first direction can be measured in an extremely short time. Furthermore, because the angular resolution can be improved by increasing the number of stages of the potential difference ΔVi, measurement accuracy can be improved compared to conventional configurations in which multiple electrode bodies are arranged to measure the angular distribution.

[0147] In the above-described embodiment, the deflection frequency fd is set to be smaller than the scan frequency fs, i.e., the deflection period Td is set to be larger than the scan period Ts. In a modified example, the deflection frequency fd may be set to be larger than the scan frequency fs, or the deflection period Td may be smaller than the scan period Ts. For example, the scan frequency fs may be set to a small value, such as 10 Hz or less, and the deflection frequency fd may be set to, for example, 10 times or more, 20 times or more, or 50 times or more, or, for example, 1000 times or less, 500 times or less, or 200 times or less, of the scan frequency fs. The deflection frequency fd may be, for example, 100 Hz or more, 500 Hz or more, or 1 kHz or more, or, for example, 100 kHz or less, 50 kHz or less, or 10 kHz or less. In this case, multiple beam current values ​​Ii corresponding to multiple potential differences ΔVi can be obtained while the scan beam SB is scanned back and forth or one way. Therefore, even in this case, the angular distribution of the scan beam SB in the first direction can be measured during a scan period Ts of 1 second or less or 0.1 seconds or less. In this case, the deflection frequency fd may be set so as not to be an integer multiple of the scan frequency fs.

[0148] In the above-described embodiment, the scan voltage waveform Vs(t) is a triangular wave. However, the shape of the scan voltage waveform Vs(t) is not particularly limited and may be a sine wave, a modulated triangular wave or a sine wave, or a waveform that changes stepwise. Furthermore, in the above-described embodiment, the time waveform ΔV(t) of the potential difference changes stepwise. However, the shape of the time waveform ΔV(t) of the potential difference is not particularly limited and may be a triangular wave, a sine wave, or a modulated triangular wave or a sine wave. Each of the scan voltage waveform Vs(t) and the time waveform ΔV(t) of the potential difference may be any periodically changing waveform, such as a stepwise waveform, a triangular wave, a sine wave, or a modulated triangular wave or a sine wave. The deflection frequency fd of the time waveform ΔV(t) of the potential difference may be set so that it is not an integer multiple of the scan frequency fs of the scan voltage waveform Vs(t), and the scan frequency fs may not be an integer multiple of the deflection frequency fd.

[0149] In the above embodiment, the case where the scan beam SB is the measurement target has been described, but the angle measurement device 100 may also measure an ion beam that is not scanned by a beam scanning device. In this case, in order to measure the entire ion beam that is not scanned, the measurement of the ion beam may be performed in combination with moving the angle measurement device 100 in the scan direction (y direction). Furthermore, the measurement of the scan beam SB may be performed in combination with moving the angle measurement device 100 in the scan direction (y direction).

[0150] Second Embodiment Similar to the first embodiment, the angle measurement device according to the second embodiment includes an incident surface, an exit surface, an electrode assembly, a power supply, and a current measuring device. The second embodiment differs from the first embodiment in that multiple incident openings are provided on the incident surface and multiple exit openings are provided on the exit surface. The following description of the angle measurement device according to the second embodiment will focus on the differences from the first embodiment, and will omit a description of the commonalities as appropriate.

[0151] 19 and 20 are plan views showing a schematic configuration of an angle measurement device 200 according to a second embodiment. FIG. 19 shows an incident surface 204 having multiple incident apertures 202a, 202b, and 202c, as viewed from the upstream side in the beam propagation direction (z direction). The multiple incident apertures 202a to 202c are arranged side by side in a direction (x direction) perpendicular to the scanning direction of the scan beam SB within the measurement range D. The x-direction aperture ranges D1, D2, and D3 in which the multiple incident apertures 202a to 202c are provided are set to be continuous with no gaps in the x direction and not overlap with each other in the x direction. The multiple incident apertures 202a to 202c are formed to penetrate a front plate 216 having the incident surface 204.

[0152] The multiple incident apertures 202a-202c have slit-shaped aperture widths w1a, w1b, and w1c in the p direction, which is oblique to the scanning direction (y direction), but long aperture widths w2a, w2b, and w2c in the q direction, which is perpendicular to the p direction. The multiple incident apertures 202a-202c have the same aperture widths w1a-w1c in the slit width direction (i.e., p direction). The multiple incident apertures 202a-202c have the same aperture widths w2a, w2b, and w2c in the slit length direction (q direction) as the multiple incident apertures 202a-202c. In the example of FIG. 19 , the aperture width w2b in the slit length direction of the second incident aperture 202b located in the center is longer than the aperture widths w2a and w2c in the slit length direction of the first and third incident apertures 202a and 202c located on either side of the second incident aperture 202b.

[0153] 20 shows an exit surface 208 having multiple exit apertures 206a, 206b, and 206c, as viewed from the downstream side in the beam propagation direction (z direction). The multiple exit apertures 206a-206c may have the same shape and size as the corresponding entrance apertures 202a-202c. The multiple exit apertures 206a-206c are arranged so that their positions in the x and y directions perpendicular to the propagation direction of the scan beam SB coincide with the corresponding entrance apertures 202a-202c. The opening widths w3a, w3b, and w3c in the slit width direction of the multiple exit apertures 206a-206c may be the same as the opening widths w1a-w1c in the slit width direction of the corresponding entrance apertures 202a-202c. The aperture widths w4a, w4b, and w4c of the plurality of output apertures 206a to 206c in the slit length direction may be the same as the aperture widths w2a to w2c of the corresponding input apertures 202a to 202c in the slit length direction.

[0154] 19 and 20 , the angle measurement device 200 has three entrance apertures 202a to 202c and three exit apertures 206a to 206c. That is, the angle measurement device 200 has a first entrance aperture 202a, a second entrance aperture 202b, and a third entrance aperture 202c provided on the entrance surface 204, and a first exit aperture 206a, a second exit aperture 206b, and a third exit aperture 206c provided on the exit surface 208. Note that the number of each of the multiple entrance apertures and multiple exit apertures provided in the angle measurement device 200 is not limited to three, and may be two, or four or more.

[0155] 19 and 20 , the angle θ1 between the slit width direction (p direction) of the plurality of entrance apertures 202 a to 202 c and the plurality of exit apertures 206 a to 206 c and the scanning direction (y direction) is 45 degrees. Note that the angle θ1 between the slit width direction (p direction) and the scanning direction (y direction) is not particularly limited and may be, for example, 5 degrees or more, 15 degrees or more, or 30 degrees or more, or may be, for example, 85 degrees or less, 75 degrees or less, or 60 degrees or less.

[0156] FIG. 21 is a cross-sectional view showing a schematic configuration of an electrode assembly 210 according to the second embodiment. The electrode assembly 210 is disposed between the incident surface 204 and the exit surface 208. Unlike FIG. 15 described above, FIG. 21 shows a cross-sectional view perpendicular to the traveling direction (z direction) of the scan beam SB. In FIG. 21, the positions of multiple entrance apertures 202a to 202c are indicated by dashed lines.

[0157] The electrode assembly 210 has a first electrode surface 222a, a second electrode surface 224a, a third electrode surface 224b, a fourth electrode surface 222b, a fifth electrode surface 222c, and a sixth electrode surface 224c. The first electrode surface 222a and the second electrode surface 224a face each other at a first distance d1 in a first direction across the ion beam traveling from the first entrance aperture 202a to the first exit aperture 206a. The first direction is parallel to the slit width direction (p direction) of the first entrance aperture 202a. The third electrode surface 224b and the fourth electrode surface 222b face each other at a second distance d2 in a second direction across the ion beam traveling from the second entrance aperture 202b to the second exit aperture 206b. The second direction is parallel to the slit width direction (p direction) of the second entrance aperture 202b. The fifth electrode surface 222c and the sixth electrode surface 224c face each other at a third distance d3 in the third direction across the ion beam traveling from the third entrance aperture 202c to the third exit aperture 206c. The third direction is parallel to the slit width direction (direction p) of the third entrance aperture 202c. Therefore, in the example shown in FIG. 21 , the first direction, the second direction, and the third direction are parallel to one another. Furthermore, the first distance d1, the second distance d2, and the third distance d3 are the same.

[0158] A power source 112 is connected to the electrode assembly 210. The power source 112 has the same configuration as in the first embodiment. The power source 112 generates a potential difference between two opposing electrode surfaces. The power source 112 generates a first potential difference between the first electrode surface 222a and the second electrode surface 224a, a second potential difference between the third electrode surface 224b and the fourth electrode surface 222b, and a third potential difference between the fifth electrode surface 222c and the sixth electrode surface 224c.

[0159] The electrode assembly 210 includes a first electrode body 226 and a second electrode body 228. The first electrode body 226 has a first electrode surface 222a, a fourth electrode surface 222b, and a fifth electrode surface 222c. The second electrode body 228 has a second electrode surface 224a, a third electrode surface 224b, and a sixth electrode surface 224c. A first power source 130 is coupled to the first electrode body 226, and a second power source 132 is coupled to the second electrode body 228. In this case, the magnitudes of the first potential difference, the second potential difference, and the third potential difference are the same. However, the directions of the electric fields generated between the two opposing electrode surfaces may be different. The direction of the first electric field Ea based on the first potential difference between the first electrode surface 222a and the second electrode surface 224a is the same as the direction of the third electric field Ec based on the third potential difference between the fifth electrode surface 222c and the sixth electrode surface 224c, but is opposite (or anti-parallel) to the direction of the second electric field Eb based on the second potential difference between the third electrode surface 224b and the fourth electrode surface 222b.

[0160] A side plate 220 for enclosing the first electrode body 226 and the second electrode body 228 may be provided around the periphery of the electrode assembly 210. The side plate 220 may be configured to extend in a cylindrical shape from the front plate 216 toward the rear plate 218. The front plate 216, the rear plate 218, and the side plate 220 may form a housing that houses the electrode assembly 210. The front plate 216, the rear plate 218, and the side plate 220 may be grounded and have a ground potential.

[0161] Fig. 22 is a plan view showing a schematic configuration of the current measuring device 214 according to the second embodiment. The current measuring device 214 includes multiple current measuring devices 214a, 214b, and 214c. The multiple current measuring devices 214a to 214c are configured to detect ion beams that have passed through the corresponding extraction apertures 206a to 206c and measure beam current values. In Fig. 21, the positions of the multiple extraction apertures 206a to 206c are indicated by dashed lines.

[0162] The current measuring device 214 may include a first current measuring device 214a, a second current measuring device 214b, and a third current measuring device 214c. The first current measuring device 214a detects the ion beam exiting from the first exit aperture 206a and measures a first beam current value. The second current measuring device 214b detects the ion beam exiting from the second exit aperture 206b and measures a second beam current value. The third current measuring device 214c detects the ion beam exiting from the third exit aperture 206c and measures a third beam current value.

[0163] Each of the multiple current measuring devices 214a to 214c can be configured similarly to the current measuring device 114 according to the first embodiment described above. Each of the multiple current measuring devices 214a to 214c can include a Faraday cup, an ammeter 236a to 236c coupled to the Faraday cup, a suppression electrode having passage openings 242a, 242b, and 242c, and a suppression power supply coupled to the suppression electrode.

[0164] The angle measurement device 200 may further include a measurement control device 244 (see FIG. 21 ). The measurement control device 244 includes a processor 244 a and a memory 244 b. The measurement control device 244 may be configured similarly to the measurement control device 144 according to the first embodiment described above. The measurement control device 244 outputs a command value for applying a variable voltage to the electrode assembly 210, thereby changing the potential difference ΔV between the two opposing electrode surfaces over time.

[0165] The measurement control device 244 acquires beam current values ​​measured by the multiple current measuring devices 214a to 214c and calculates angular information using the acquired beam current values. For example, the measurement control device 244 can sum the first beam current value Ii1, the second beam current value Ii2, and the third beam current value Ii3 measured for a specific potential difference ΔVi and calculate the intensity of the angular component using the summed beam current value Ii (= Ii1 + Ii2 + Ii3). The measurement control device 244 converts the potential difference ΔVi into an angle θpi in the p direction to obtain the beam current value Ii corresponding to the angle θpi. This allows for the acquisition of angular information in the p direction, which is oblique to the scanning direction (y direction).

[0166] In the second embodiment, the current measuring device 214 may be configured with only a single current measuring device instead of including multiple current measuring devices 214a to 214c. In this case, the current measuring device 214 may be configured with a single Faraday cup that detects the total of multiple ion beams extracted from each of the multiple extraction apertures 206a to 206c. In other words, the single Faraday cup is configured to detect a group of ion beams that is a combination of all of the ion beams extracted from the first extraction aperture 206a, the second extraction aperture 206b, and the third extraction aperture 206c. In this case, the single Faraday cup can be used to measure the total value Ii (=Ii1+Ii2+Ii3) of the first beam current value Ii1, the second beam current value Ii2, and the third beam current value Ii3.

[0167] According to this embodiment, when multiple entrance openings 202a to 202c and multiple exit openings 206a to 206c are provided, the configuration of the electrode assembly can be simplified by using an electrode body that integrates multiple electrode surfaces to which a common applied voltage is applied.

[0168] Fig. 23 is a cross-sectional view showing a schematic configuration of an electrode assembly 210A according to a modified example. Similar to the electrode assembly 210 shown in Fig. 21, the electrode assembly 210A has a first electrode surface 222a, a second electrode surface 224a, a third electrode surface 224b, a fourth electrode surface 222b, a fifth electrode surface 222c, and a sixth electrode surface 224c.

[0169] The electrode assembly 210A includes a first electrode body 226A, a second electrode body 228, and a third electrode body 230. The first electrode body 226A has a first electrode surface 222a. The second electrode body 228 has a second electrode surface 224a, a third electrode surface 224b, and a sixth electrode surface 224c. The third electrode body 230 has a fourth electrode surface 222b and a fifth electrode surface 222c. A first power source 130 is coupled to the first electrode body 226A and the third electrode body 230. A second power source 132 is coupled to the second electrode body 228.

[0170] Even when the electrode assembly 210A according to this modification is used, the same effects as those of the second embodiment described above can be achieved.

[0171] 24 is a plan view showing a schematic configuration of an incident surface 304 of an angle measurement device 300 according to a third embodiment. The angle measurement device 300 according to the third embodiment is configured to be able to measure angle information in the scan direction (y direction) of the scan beam SB and angle information in a direction (x direction) perpendicular to the scan direction of the scan beam SB. The angle measurement device 300 according to the third embodiment will be described below, focusing on differences from the above-described embodiments, and description of commonalities will be omitted as appropriate.

[0172] FIG. 24 shows an incident surface 304 having multiple incident apertures 302a-302d, viewed from the upstream side in the beam propagation direction (z direction). Multiple incident apertures 302a, 302b, 302c, and 302d are formed on the incident surface 304. The first incident aperture 302a, the second incident aperture 302b, and the third incident aperture 302c can be configured similarly to the multiple incident apertures 202a-202c according to the second embodiment. The slit width direction of the first incident aperture 302a, the second incident aperture 302b, and the third incident aperture 302c is the p direction, which is oblique to the scanning direction (y direction). The fourth incident aperture 302d is positioned within the measurement range D where the first incident aperture 302a, the second incident aperture 302b, and the third incident aperture 302c are formed, and is positioned away from the first incident aperture 302a, the second incident aperture 302b, and the third incident aperture 302c in the scanning direction (y direction). The slit width direction of the fourth incident aperture 302d is parallel to the scanning direction (y direction). The opening width w2d in the slit length direction of the fourth incident aperture 302d corresponds to, for example, the measurement range D. The opening widths w1a, w1b, w1c, and w1d in the slit width direction of the multiple incident apertures 302a, 302b, 302c, and 302d are common to each other. The multiple incident apertures 302a to 302d are formed to penetrate a front plate 316 having an incident surface 304.

[0173] FIG. 25 is a plan view showing a schematic configuration of the exit surface 308 of the angle measurement device 300 according to the third embodiment. FIG. 25 shows the entrance surface 204 having multiple exit apertures 306a to 306d, viewed from the downstream side in the beam propagation direction (z direction). The exit surface 308 is formed with multiple exit apertures 306a to 306d. The multiple exit apertures 306a to 306d may have the same shape and size as the corresponding entrance apertures 302a to 302d. The multiple exit apertures 306a to 306d are arranged so that their positions in the x and y directions perpendicular to the propagation direction of the scan beam SB coincide with the corresponding entrance apertures 302a to 302d. The opening widths w3a, w3b, w3c, and w3d of the multiple exit apertures 306a to 306d in the slit width direction may be the same as the opening widths w1a to w1d of the corresponding entrance apertures 302a to 302d in the slit width direction. The aperture widths w4a, w4b, and w4c of the plurality of output apertures 306a to 306d in the slit length direction may be the same as the aperture widths w2a to w2d of the corresponding input apertures 302a to 302d in the slit length direction.

[0174] Fig. 26 is a cross-sectional view showing a schematic configuration of an electrode assembly 310 according to the third embodiment. The electrode assembly 310 is disposed between the incident surface 304 and the exit surface 308. In Fig. 26, the positions of multiple incident openings 302a to 302d are indicated by dashed lines.

[0175] The electrode assembly 310 has a first electrode surface 322a, a second electrode surface 324a, a third electrode surface 324b, a fourth electrode surface 322b, a fifth electrode surface 322c, a sixth electrode surface 324c, a seventh electrode surface 324d, and an eighth electrode surface 322d. The first electrode surface 322a to the sixth electrode surface 324c can be configured similarly to the first electrode surface 222a to the sixth electrode surface 224c shown in FIG. 21 above. The seventh electrode surface 324d and the eighth electrode surface 322d face each other in a fourth direction at a fourth distance d4 across the ion beam traveling from the fourth entrance aperture 302d to the fourth exit aperture 306d. The fourth direction is parallel to the slit width direction (y direction) of the fourth entrance aperture 302d. In the example shown in FIG. 26, the fourth direction is oblique to the first, second, and third directions. The fourth distance d4 is the same as the first distance d1, the second distance d2, and the third distance d3.

[0176] A power source 112 is connected to the electrode assembly 310. The power source 112 is configured similarly to the above-described embodiment. The power source 112 generates a potential difference between two opposing electrode surfaces. The power source 112 generates a first potential difference between the first electrode surface 322a and the second electrode surface 324a, a second potential difference between the third electrode surface 324b and the fourth electrode surface 322b, a third potential difference between the fifth electrode surface 322c and the sixth electrode surface 324c, and a fourth potential difference between the seventh electrode surface 324d and the eighth electrode surface 322d.

[0177] The electrode assembly 310 includes a first electrode body 326, a second electrode body 328, and a third electrode body 330. The first electrode body 326 has a first electrode surface 322a, a fourth electrode surface 322b, and a fifth electrode surface 322c. The second electrode body 328 has a second electrode surface 324a, a third electrode surface 324b, a sixth electrode surface 324c, and a seventh electrode surface 324d. The third electrode body 330 has an eighth electrode surface 322d. A first power source 130 is coupled to the first electrode body 326 and the third electrode body 330, and a second power source 132 is coupled to the second electrode body 328. In this case, the magnitudes of the first potential difference, the second potential difference, the third potential difference, and the fourth potential difference are the same. However, the direction of the electric field generated between the two opposing electrode surfaces may be different. The direction of the first electric field Ea based on the first potential difference between the first electrode surface 322a and the second electrode surface 324a is the same as the direction of the third electric field Ec based on the third potential difference between the fifth electrode surface 322c and the sixth electrode surface 324c, but is opposite (or antiparallel) to the direction of the second electric field Eb based on the second potential difference between the third electrode surface 324b and the fourth electrode surface 322b. The direction of the fourth electric field Ed based on the fourth potential difference between the seventh electrode surface 324d and the eighth electrode surface 322d is oblique to the directions of the first electric field Ea, the second electric field Eb, and the third electric field Ec.

[0178] A side plate 320 may be provided around the periphery of the electrode assembly 310 to enclose the first electrode body 326, the second electrode body 328, and the third electrode body 330. The side plate 320 may be configured to extend in a cylindrical shape from the front plate 316 toward the rear plate 318. The front plate 316, the rear plate 318, and the side plate 320 may form a housing that houses the electrode assembly 310. The front plate 316, the rear plate 318, and the side plate 320 may be grounded and have a ground potential.

[0179] Figure 27 is a plan view showing a schematic configuration of the current measuring device 314 according to the third embodiment. The current measuring device 314 includes multiple current measuring devices 314a, 314b, 314c, and 314d. The multiple current measuring devices 314a to 314d are configured to detect ion beams that have passed through the corresponding extraction apertures 306a to 306d and measure beam current values. In Figure 27, the positions of the multiple extraction apertures 306a to 306d are indicated by dashed lines.

[0180] The current measuring device 314 may include a first current measuring device 314a, a second current measuring device 314b, a third current measuring device 314c, and a fourth current measuring device 314d. The first current measuring device 314a detects the ion beam extracted from the first extraction aperture 306a and measures a first beam current value. The second current measuring device 314b detects the ion beam extracted from the second extraction aperture 306b and measures a second beam current value. The third current measuring device 314c detects the ion beam extracted from the third extraction aperture 306c and measures a third beam current value. The fourth current measuring device 314d detects the ion beam extracted from the fourth extraction aperture 306d and measures a fourth beam current value.

[0181] Each of the multiple current measuring devices 314a to 314d can be configured similarly to the current measuring device 114 according to the first embodiment described above. Each of the multiple current measuring devices 314a to 314d can include a Faraday cup, an ammeter coupled to the Faraday cup, a suppression electrode having passage openings 342a, 342b, 342c, and 342d, and a suppression power supply coupled to the suppression electrode.

[0182] The angle measurement device 300 may further include a measurement control device 344 (see FIG. 26 ). The measurement control device 344 includes a processor 344 a and a memory 344 b. The measurement control device 344 may be configured similarly to the measurement control device 144 according to the first embodiment described above. The measurement control device 344 outputs a command value for applying a variable voltage to the electrode assembly 310, thereby changing the potential difference ΔV between the two opposing electrode surfaces over time.

[0183] The measurement control device 344 acquires beam current values ​​measured by the multiple current measuring devices 314a to 314d and calculates angular information using the acquired beam current values. For example, the measurement control device 344 sums the first beam current value Ii1, the second beam current value Ii2, and the third beam current value Ii3 measured for a specific potential difference ΔVi, and calculates the intensity of the angular component in the p direction using the summed beam current value Ii (= Ii1 + Ii2 + Ii3). The measurement control device 344 converts the potential difference ΔVi into an angle θpi in the p direction to obtain the beam current value Ii at the angle θpi. This allows for obtaining angular information in the p direction, which is oblique to the scan direction (y direction).

[0184] The measurement control device 344 acquires the fourth beam current value Ii4 measured for a specific value of the potential difference ΔVi and calculates the intensity of the angular component in the y direction using the fourth beam current value Ii4. The measurement control device 344 converts the potential difference ΔVi into the angle θyi to obtain the beam current value Ii4 at the angle θyi. This makes it possible to obtain angle information in the scan direction (y direction).

[0185] The measurement control device 344 calculates angle information in the direction perpendicular to the scan direction (x direction) using angle information in the scan direction (y direction) and angle information in the p direction, which is oblique to the scan direction (y direction). As a method for calculating angle information in the direction perpendicular to the scan direction (x direction), for example, a known method described in JP 2019-169407 A can be used.

[0186] In the third embodiment, the current measuring device 314 may be a single current measuring device instead of the first to third current measuring devices 314 a to 314 c. In this case, the current measuring device 314 may include a first current measuring device that measures a first beam current value by detecting the sum of the ion beams extracted from the first to third extraction apertures 306 a to 306 c, and a second current measuring device that detects the ion beam extracted from the fourth extraction aperture 306 d and measures a second beam current value. The first current measuring device is configured to detect a group of ion beams that is a combination of the ion beam extracted from the first extraction aperture 306 a, the ion beam extracted from the second extraction aperture 306 b, and the ion beam extracted from the third extraction aperture 306 c. In this case, the first current measuring device can be used to measure the total value Ii (=Ii1+Ii2+Ii3) of the first beam current value Ii1, the second beam current value Ii2, and the third beam current value Ii3.

[0187] Fig. 28 is a cross-sectional view showing a schematic configuration of an electrode assembly 310A according to a modified example. Similar to the electrode assembly 310 shown in Fig. 26, the electrode assembly 310A has a first electrode surface 322a, a second electrode surface 324a, a third electrode surface 324b, a fourth electrode surface 322b, a fifth electrode surface 322c, a sixth electrode surface 324c, a seventh electrode surface 324d, and an eighth electrode surface 322d.

[0188] The electrode assembly 310A includes a first electrode body 326A having a first electrode surface 322a, a second electrode body 328A having a second electrode surface 324a and a third electrode surface 324b, a third electrode body 330A having a fourth electrode surface 322b and a fifth electrode surface 322c, a fourth electrode body 332 having a sixth electrode surface 324c, a fifth electrode body 334 having a seventh electrode surface 324d, and a sixth electrode body 336 having an eighth electrode surface 322d. A first power source 130 is coupled to the first electrode body 326A, the third electrode body 330A, and the sixth electrode body 336. A second power source 132 is coupled to the second electrode body 328A, the fourth electrode body 332, and the fifth electrode body 334. It is also possible to reverse the power supplies coupled to the fifth electrode body 334 and the sixth electrode body 336, with the first power supply 130 coupled to the fifth electrode body 334 and the second power supply 132 coupled to the sixth electrode body 336.

[0189] The electrode assembly 310A further includes a seventh electrode body 338. The seventh electrode body 338 is disposed between the electrode group including the first electrode body 326A, the second electrode body 328A, the third electrode body 330A, and the fourth electrode body 332, and the fifth electrode body 334. The seventh electrode body 338 is grounded and has a ground potential.

[0190] Even when the electrode assembly 310A according to this modification is used, the same effects as those of the third embodiment can be achieved.

[0191] Next, an ion extraction device for generating an ion beam will be described. Fig. 29 is a schematic diagram of the ion extraction device according to the first embodiment. The ion extraction device includes an ion source 20 for generating plasma containing desired ions, and an extraction unit 22 for extracting a group of ions containing the desired ions from the ion source 20 or the arc chamber 20a to generate an ion beam IB.

[0192] As described above with reference to FIG. 1 and other figures, the extraction unit 22 provided downstream of the ion source 20 extracts ions from the internal space 20b of the ion source 20 through the front slit 20c to generate an ion beam IB. Hereinafter, the opening of the front slit 20c, from which an ion group including desired ions constituting the ion beam IB is extracted, will be referred to as a first opening OP1. As described above with reference to FIG. 1 and other figures, the first opening OP1 of the front slit 20c has a slit shape with a long opening width in the horizontal direction (x1 direction) and a short opening width in the vertical direction (y direction). In other words, the opening width of the first opening OP1 in the horizontal direction is larger than the opening width of the first opening OP1 in the vertical direction.

[0193] The extraction section 22 includes, from downstream to upstream in the traveling direction of the ion beam IB (from right to left in FIG. 29), a reference electrode 22b, a suppression electrode 22a, and a movable conductor 22e.

[0194] The reference electrode 22b, which is represented as the second extraction electrode 22b in FIG. 1 and other figures, has a second opening OP2 through which the ion beam IB passes, and is connected to a ground potential V ｇｎｄ In the following, the ground potential V ｇｎｄ For convenience, the reference potential is assumed to be zero (0). ｇｎｄ A potential higher than (=0) is conveniently expressed as a positive potential, and such a reference potential V ｇｎｄ For convenience, a potential lower than (=0) is represented as a negative potential. The second opening OP2, which is represented as the second extraction opening 22d in FIG. 1 and other figures, has a slit shape with a long opening width in the horizontal direction (x1 direction) and a short opening width in the vertical direction (y direction), similar to the front slit 20c. In other words, the opening width of the second opening OP2 in the horizontal direction is larger than the opening width of the second opening OP2 in the vertical direction.

[0195] The suppression electrode 22a, which is represented as the first extraction electrode 22a in FIG. 1 and other figures, has a third opening OP3 through which the ion beam IB passes, and is connected to a reference potential V ｇｎｄ Lower negative suppression potential V ｓｕｐis applied. The third opening OP3, which is represented as the first extraction opening 22c in FIG. 1 and other figures, has a slit shape with a long opening width in the horizontal direction (x1 direction) and a short opening width in the vertical direction (y direction), similar to the front slit 20c. In other words, the opening width of the third opening OP3 in the horizontal direction is larger than the opening width of the third opening OP3 in the vertical direction. The suppression electrode 22a is disposed between a movable conductor 22e (described later) on the upstream side and a reference electrode 22b on the downstream side.

[0196] The front slit 20c and / or the arc chamber 20a of the ion source 20 are connected to a reference potential V ｇｎｄ A higher positive extraction potential V ｅｘｔ is applied.

[0197] The movable conductor 22e is disposed between the upstream front slit 20c and the downstream suppression electrode 22a. The movable conductor 22e includes a fourth opening OP4 through which the ion beam IB passes. Similar to the front slit 20c, the fourth opening OP4 has a slit shape with a long opening width in the horizontal direction (x1 direction) and a short opening width in the vertical direction (y direction). In other words, the opening width of the fourth opening OP4 in the horizontal direction is larger than the opening width of the fourth opening OP4 in the vertical direction. The size of the fourth opening OP4 is preferably larger than the size of the first opening OP1.

[0198] In the illustrated example, the movable conductor 22e is applied with a positive extraction potential V ｅｘｔ and zero reference potential V ｇｎｄ A control potential V ｃｔｌ A control potential V ｃｔｌ is the extraction potential V ｅｘｔ and an additional potential V ａｄｄ Specifically, the additional potential V ａｄｄ The absolute value of the extraction potential V ｅｘｔ is smaller than the absolute value of the control potential V ｃｔｌ is "V ｅｘｔ -V ａｄｄ ” (>0). The movable conductor 22e is at the reference potential V ｇｎｄ , extraction potential V ｅｘｔ , additional potential V ａｄｄ , suppression potential V ｓｕｐAlternatively, the movable conductor 22e may be electrically connected to the front slit 20c via a conductor, so that the movable conductor 22e is supplied with the same positive extraction potential V as the front slit 20c (ion source 20). ｅｘｔ (e.g., in FIG. 29, additional potential V ａｄｄ (Set to zero).

[0199] The first opening OP1 of the front slit 20c, the second opening OP2 of the reference electrode 22b, the third opening OP3 of the suppression electrode 22a, and the fourth opening OP4 of the movable conductor 22e are all similar slits that are long in the x1 direction (in FIG. 29 , each slit is schematically shown in the y direction, which is the short direction). The ion beam IB extracted from the ion source 20 by such an extraction unit 22 passes through the first opening OP1 of the front slit 20c, the fourth opening OP4 of the movable conductor 22e, the third opening OP3 of the suppression electrode 22a, and the second opening OP2 of the reference electrode 22b, in this order.

[0200] The two downstream electrodes in the extraction section 22, i.e., the suppression electrode 22a and the reference electrode 22b, may be configured as an integrated electrode unit. In this case, the distance between the suppression electrode 22a and the reference electrode 22b in the traveling direction of the ion beam IB (the z1 direction in FIG. 29) is constant or unchanging. In other words, the center-to-center distance between the third opening OP3 of the suppression electrode 22a and the second opening OP2 of the reference electrode 22b along the traveling direction is constant or unchanging.

[0201] On the other hand, the entire electrode unit integrally formed by the suppression electrode 22 a and the reference electrode 22 b may be provided so as to be movable along the traveling direction of the ion beam IB relative to the ion source 20. In the illustrated example, the distance along the traveling direction between the ion source 20 (strictly, the front slit 20 c) and the electrode unit (strictly, the suppression electrode 22 a) is a first distance Gap １ and the second distance Gap ２ As will be described later, in this embodiment, the first distance Gap １is variable, but by moving the electrode unit along the traveling direction, the second distance Gap ２ is also variable.

[0202] The movable conductor 22e (and / or its fourth opening OP4) is spaced from the front slit 20c (and / or its first opening OP1) by a first distance Gap １ As shown in Fig. 30, the movable conductor 22e may be connected to the ion source 20 and / or the front slit 20c by an extension / contraction mechanism 22f that is extendable and contractible along the traveling direction. A first distance Gap between the front slit 20c (first opening OP1) and the movable conductor 22e (fourth opening OP4) is changed depending on the extension / contraction of the extension / contraction mechanism 22f. １ increases or decreases.

[0203] The extension mechanism 22f is preferably made of an insulating material and has insulating properties. In this case, as described above with reference to FIG. 29, the extraction potential V ｅｘｔ and a control potential V ｃｔｌ (i.e., V ｅｘｔ -V ａｄｄ ) can be applied to the movable conductor 22e. In the example of FIG. ａｄｄ and a diode D connected in series in the same direction as the additional potential V ａｄｄ A feedback resistor R is provided which is connected in parallel to the ion source 20. On the other hand, the extension mechanism 22f may be made of a conductive material and have conductivity. In this case, the movable conductor 22e is supplied with the same extraction potential V as the ion source 20 (front slit 20c). ｅｘｔ is applied (additional potential V ａｄｄ , diode D, and feedback resistor R are not provided).

[0204] The ion extraction device according to this embodiment configured as described above can appropriately control the manner in which ions constituting the ion beam IB are extracted from the ion source 20 by using various parameters. The parameters that can be controlled by the ion extraction device include the reference potential V ｇｎｄ (typically constant), suppression potential Vｓｕｐ , extraction potential V ｅｘｔ , control potential V ｃｔｌ (or additional potential V ａｄｄ ) and a first distance Gap between the front slit 20c and the movable conductor 22e. １ , the second distance Gap between the movable conductor 22e and the suppression electrode 22a ２ , the distance Gap between the front slit 20c and the suppression electrode 22a ２ Examples of distance parameters include:

[0205] As mentioned above, the reference potential V ｇｎｄ , suppression potential V ｓｕｐ , extraction potential V ｅｘｔ , control potential V ｃｔｌ Each of the potential parameters may be variably controlled or adaptively controlled. In the following example, however, the potential parameters are substantially fixed, and mainly two distance parameters Gap １ , Gap ２ The value of each potential parameter can be set arbitrarily. For example, the reference potential V ｇｎｄ is "0V", and the suppression potential V ｓｕｐ is "-2 kV", and the extraction potential V ｅｘｔ is "+40kV", and the control potential V ｃｔｌ is "+30kV".

[0206] Two distance parameters Gap according to this embodiment １ , Gap ２ In order to clarify the significance of variable control of one distance parameter Gap ２ A comparative example involving variable control of the electrode potential V' will be described with reference to FIG. 31. This comparative example is substantially the same as the embodiment shown in FIG. 29 or 30, except that it does not include the movable conductor 22e. That is, while the embodiment shown in FIG. 29 or 30 includes four electrodes or conductors 20c, 22e, 22a, and 22b, the comparative example shown in FIG. 31 includes three electrodes 20c, 22a, and 22b. Each of these electrodes 20c, 22a, and 22b is connected to "+40 kV" (extraction potential V), as in the embodiment shown in FIG. 29 or 30. ｅｘｔ), "-2kV" (suppression potential V ｓｕｐ ), “0V” (reference potential V ｇｎｄ ) is applied. Equipotential lines are shown schematically between the electrodes 20c, 22a, and 22b.

[0207] 31(a) shows the slit-shaped first opening OP1, third opening OP3, and second opening OP2 of each electrode 20c, 22a, and 22b in the short direction (y direction), and the left diagram of FIG. 31(b) shows the slit-shaped first opening OP1, third opening OP3, and second opening OP2 of each electrode 20c, 22a, and 22b in the long direction (x1 direction). In this comparative example, the distance Gap between the front slit 20c and the suppression electrode 22a along the traveling direction (z1 direction) of the ion beam IB is ２ Only ' is substantially variable.

[0208] The right diagram of Figure 31(a) shows a two-dimensional plot of the position y in the short direction (y direction) of the ion beam IB and the tilt angle y' with respect to the propagation direction (z1 direction) at the observation position shown in the left diagram (a predetermined z1 direction position between the reference electrode 22b and the defining aperture 24g arranged at the entrance of the mass analysis magnet device 24a). The right diagram of Figure 31(b) shows a two-dimensional plot of the position x1 in the long direction (x1 direction) of the ion beam IB and the tilt angle x1' with respect to the propagation direction at the observation position shown in the left diagram. Such a two-dimensional distribution of the position (y or x1) and tilt angle (y' or x1') of the ion beam IB is represented as the phase space distribution of the ion beam IB. That is, the diagram on the right side of FIG. 31(a) shows the phase space distribution of the ion beam IB in the y direction (short direction), and the diagram on the right side of FIG. 31(b) shows the phase space distribution of the ion beam IB in the x1 direction (longitudinal direction).

[0209] In the phase space distribution in each direction, the plots with black circles represent data actually measured at the observation position, and the plots with white circles represent ideal data. In Fig. 31(a) in the lateral direction, it can be seen that the measured phase space distribution is spread in the y and y' directions compared to the ideal phase space distribution. In Fig. 31(b) in the longitudinal direction, it can be seen that the measured phase space distribution is distorted in an S-shape compared to the ideal phase space distribution, which is approximately linear along the x1' axis (horizontal axis). The undesired spread of the phase space distribution in Fig. 31(a) and the S-shape distortion of the phase space distribution in Fig. 31(b) are due to the distance Gap ２ However, this can be reduced by increasing the distance Gap ' (i.e., by moving the suppression electrode 22a away from the front slit 20c). ２ ' has an upper limit in terms of the device configuration, and the actual measurement data in FIG. ２ The distance Gap ２ Although it is possible to increase the maximum value of ', this would result in an undesirably large ion extraction system and therefore an ion implantation system 10.

[0210] The undesirable phase space distribution as shown in FIG. 31 is particularly caused by the extraction current I of the ion beam IB. ｅｘｔ For example, one of the causes of the undesirable phase space distribution is thought to be that the equipotential lines are significantly distorted immediately after the first opening OP1 of the front slit 20c in FIG.

[0211] According to the movable conductor 22e of this embodiment, the above-described extracted current I ｅｘｔ This can mitigate the over-focusing and subsequent divergence of the ion beam IB under low current conditions where the current I is small, and realize a desirable phase space distribution as shown by the white circles in Fig. 31. Fig. 32(a) shows the over-focusing and divergence of the ion beam IB in a comparative example in which the movable conductor 22e is not provided, similar to Fig. 31(a). ｅｘｔis relatively low at 1 mA. In contrast, FIG. 32(b) shows that the extracted current I ｅｘｔ 1 shows how the movable conductor 22e alleviates the over-convergence and divergence of the ion beam IB when the current is the same at 1 mA. In this example, since the extension mechanism 22f is made of a conductor (for example, graphite, tungsten, or molybdenum), the movable conductor 22e is at the same potential as the front slit 20c (extraction potential V ｅｘｔ )

[0212] In FIG. 32(b), the ion beam IB also converges downstream of the first aperture OP1 in the front slit 20c. However, the convergence position is near the fourth aperture OP4 in the movable conductor 22e, which is farther downstream from the first aperture OP1 than in FIG. 32(a). Furthermore, the degree of convergence of the ion beam IB is significantly less in FIG. 32(b) than in FIG. 32(a). As a result, in FIG. 32(b), an ion beam IB with a desirable phase spatial distribution can be achieved even under low current conditions, such as 1 mA. Note that the distance between the front slit 20c and the suppression electrode 22a is substantially the same in both FIG. 32(a) and FIG. 32(b). Thus, according to the embodiment of FIG. 32(b), an ion beam IB with a desirable phase spatial distribution can be achieved without increasing the distance between the front slit 20c and the suppression electrode 22a compared to the comparative example of FIG. 32(a) (i.e., without increasing the size of the device).

[0213] As described above, the movable conductor 22e is connected to the extraction potential V ｅｘｔ and a control potential V ｃｔｌ (i.e., V ｅｘｔ -V ａｄｄ Even if no voltage (Gap) is applied, simply placing the movable conductor 22e downstream of the front slit 20c brings about the effect of adjusting the phase space distribution and divergence of the ion beam IB. This effect is obtained by adjusting the distance (Gap) between the front slit 20c and the movable conductor 22e. １ ) into the extraction current I ｅｘｔ In addition, the movable conductor 22e can be set to an arbitrary control potential V ｃｔｌ If the control potential V ｃｔｌ and / or the first distance Gap １ The extracted current I ｅｘｔIn this way, in the ion extraction device according to this embodiment, the extraction potential V ｅｘｔ and the reference potential V ｇｎｄ The control potential V ｃｔｌ may be applied.

[0214] FIG. 33 shows the extracted current I ｅｘｔ Specifically, FIG. 33(a) shows a state in which the extracted current I ｅｘｔ indicates a state of "2mA", and FIG. 33(b) shows a state of the extracted current I ｅｘｔ indicates the "4mA" state. ｅｘｔ 32(b) where the current is "1 mA", and the current drawn I ｅｘｔ 33(a) shows the current draw of 2mA. ｅｘｔ As can be seen from FIG. 33(b) where the drawn current I ｅｘｔ As the first distance Gap between the front slit 20c and the movable conductor 22e increases, １ By adjusting to a small value, the given extraction current I ｅｘｔ The phase space distribution and divergence of the ion beam IB can be optimized for the conditions. １ is zero, and the front slit 20c and the movable conductor 22e are in close contact with each other, essentially forming one electrode or conductor.

[0215] As described above, in the ion extraction device according to this embodiment, the first distance Gap between the first opening OP1 and the fourth opening OP4 １ is controlled so that the ion beam IB has a desired phase spatial distribution when it is irradiated onto the wafer.

[0216] FIG. 34 shows the extraction current I ｅｘｔ The first distance Gap １ and the second distance Gap ２ FIG. 34(a) shows a first control example of the extracted current I ｅｘｔThe total distance between the front slit 20c and the suppression electrode 22a according to the distance (as shown in FIGS. 29 and 30, strictly speaking, the thickness of the movable conductor 22e must also be taken into consideration, but for convenience, it is referred to as the first distance Gap １ and the second distance Gap ２ The Japanese "Gap １ +Gap ２ 34(b) shows the control mode of the extracted current I ｅｘｔ A first distance Gap between the front slit 20c and the movable conductor 22e according to １ This represents the control mode.

[0217] As previously described with respect to FIGS. 32 and 33, the extracted current I ｅｘｔ The smaller the first distance Gap １ Therefore, the first distance Gap １ is the extraction current I ｅｘｔ When the minimum value is "0", the maximum value G ０ Hereafter, the extracted current I ｅｘｔ is the threshold current I ｔｈ The total distance "Gap １ +Gap ２ " is a constant value G ｃ This means that the suppression electrode 22a is fixed relative to the front slit 20c. ｅｘｔ From "0" to the threshold current I ｔｈ 32 and 33, the first distance Gap １ By gradually controlling the decrease of the ion beam IB, an optimum ion beam IB is realized.

[0218] Threshold current I ｔｈ is the constant total distance G ｃ Optimal first distance Gap under １ becomes "0" ｅｘｔ At this time, as shown in FIG. 33(b), the front slit 20c and the movable conductor 22e are in close contact with each other. The extracted current I ｅｘｔ is the threshold current I ｔｈ In the larger region, the first distance Gap １Since the first distance Gap １ When the value is "0", the second distance Gap ２ As a result, the drawn current I ｅｘｔ is the threshold current I ｔｈ In larger areas, the total distance "Gap １ (=0) + Gap ２ " is a constant value G ｃ As described above, in the example of FIG. 34, the threshold current I ｔｈ The following current draw I ｅｘｔ For the first distance Gap １ is adaptively controlled, and the threshold current I ｔｈ The above-mentioned extraction current I ｅｘｔ For the second distance Gap ２ Therefore, a wide range of extraction current I ｅｘｔ An ion beam IB having an appropriate phase space distribution and divergence is realized.

[0219] FIG. 35 shows the extraction current I ｅｘｔ The first distance Gap １ and the second distance Gap ２ FIG. 35(a) shows a second control example of the extracted current I ｅｘｔ The total distance between the front slit 20c and the suppression electrode 22a according to the distance (as shown in FIGS. 29 and 30, strictly speaking, the thickness of the movable conductor 22e must also be taken into consideration, but for convenience, it is referred to as the first distance Gap １ and the second distance Gap ２ The Japanese "Gap １ +Gap ２ 35(b) shows the control mode of the extracted current I ｅｘｔ A first distance Gap between the front slit 20c and the movable conductor 22e according to １ This represents the control mode.

[0220] As shown in FIG. 34(b), the first distance Gap １ In the first control example, the first distance Gap １ For example, the extraction current I ｅｘｔ is "0" and the first current I １Between the first distance Gap １ is the first value G １ and the extraction current I ｅｘｔ is the first current I １ and the second current I ２ Between the first distance Gap １ is the first value G １ A smaller second value G ２ and the extraction current I ｅｘｔ is the second current I ２ and the threshold current I ｔｈ Between the first distance Gap １ is the second value G ２ A smaller third value G ３ As in the first control example, the drawn current I ｅｘｔ is the threshold current I ｔｈ In the above case, the first distance Gap １ is fixed to "0".

[0221] The first distance Gap controlled in this manner １ , the second distance Gap ２ Specifically, the second distance Gap ２ is the extraction current I ｅｘｔ When the total distance "Gap" is at a minimum value near "0", it is controlled to a maximum value or a local maximum value. １ +Gap ２ " is the maximum value G ｍａｘ Hereafter, the extraction current I ｅｘｔ is the first current I １ Until the second distance Gap ２ and the total distance "Gap １ (=G １ ) + Gap ２ The current I is gradually decreased. ｅｘｔ is the first current I １ When it reaches the total distance "Gap １ (=G １ ) + Gap ２ " becomes the minimum or local minimum value.

[0222] In addition, the extracted current I ｅｘｔ is the first current I １ When the first distance Gap １ is the second value G ２On the other hand, the second distance Gap ２ is raised to the maximum value or the local maximum value. At this time, the total distance "Gap １ +Gap ２ " is again the maximum value G ｍａｘ Hereafter, the extraction current I ｅｘｔ is the second current I ２ Until the second distance Gap ２ and the total distance "Gap １ (=G ２ ) + Gap ２ The current I is gradually decreased. ｅｘｔ is the second current I ２ When it reaches the total distance "Gap １ (=G ２ ) + Gap ２ " becomes the minimum or local minimum value.

[0223] In addition, the extracted current I ｅｘｔ is the second current I ２ When the first distance Gap １ is the third value G ３ On the other hand, the second distance Gap ２ is raised to the maximum value or the local maximum value. At this time, the total distance "Gap １ +Gap ２ " is again the maximum value G ｍａｘ Hereafter, the extraction current I ｅｘｔ is the threshold current I ｔｈ Until the second distance Gap ２ and the total distance "Gap １ (=G ３ ) + Gap ２ The current I is gradually decreased. ｅｘｔ is the threshold current I ｔｈ When it reaches the total distance "Gap １ (=G ３ ) + Gap ２ " becomes the minimum or local minimum value.

[0224] In addition, the extracted current I ｅｘｔ is the threshold current I ｔｈ When the first distance Gap １ is reduced to the minimum value "0". On the other hand, the second distance Gap ２is raised to the maximum value or the local maximum value. At this time, the total distance "Gap １ +Gap ２ " is again the maximum value G ｍａｘ Hereafter, the extraction current I ｅｘｔ is the threshold current I ｔｈ When the second distance Gap increases from ２ and the total distance "Gap １ (=0) + Gap ２ As a result, the drawn current I ｅｘｔ is the threshold current I ｔｈ In larger areas, the total distance "Gap １ (=0) + Gap ２ " is the maximum value G ｍａｘ As described above, in the example of FIG. 35, the threshold current I ｔｈ The following current draw I ｅｘｔ For the first distance Gap １ is adaptively controlled in stages, and the second distance Gap ２ is continuously adaptively controlled, and the threshold current I ｔｈ The above-mentioned extraction current I ｅｘｔ For the second distance Gap ２ is continuously adaptively controlled. ｅｘｔ An ion beam IB having an appropriate phase space distribution and divergence is realized.

[0225] Next, examples of setting various parameters in the ion extraction device according to this embodiment will be described with reference to Fig. 29. However, the method of setting each parameter is arbitrary and is not limited to the following examples.

[0226] In the first step, the extraction potential V is adjusted so as to obtain an ion beam IB of a desired energy. ｅｘｔ (In the previous example, "+40 kV") and the suppression potential V ｓｕｐ (In the previous example, "-2kV") is set.

[0227] As a second step, the desired extraction current I ｅｘｔVarious apparatus parameters that reflect the state of the ion source 20 are set so that the following can be obtained. Here, the apparatus parameters include the gas species, gas flow rate, vaporizer temperature, arc current I, and the like that are set as parameters of the ion source 20. ａｒｃ , arc voltage, source magnet current, effective extraction current which is the total amount of charge carried per unit time by a group of ions including desired ions extracted from the ion source 20, and beam current of the ion beam IB irradiated onto the wafer. At least one of the various apparatus parameters set in this way in the second step can be acquired by the ion source state acquisition unit 401. In addition, the effective extraction current and the extraction potential V applied to the ion source 20 can be acquired by the ion source state acquisition unit 401. ｅｘｔ and the control potential V applied to the movable conductor 22e. ｃｔｌ The additional potential V ａｄｄ can be acquired by the electrical information acquisition unit 402.

[0228] As a third step, a desired extraction current I is calculated under the device parameters set in the second step. ｅｘｔ so that an additional potential V ａｄｄ (i.e., the control potential V ｃｔｌ ) is adjusted. Here, the molecular weight of the ion species determined by the device parameters is m, and the extraction current I ｅｘｔ Ga m －１／２ ・V ａｄｄ ３／２ In this way, in the ion extraction device according to this embodiment, the control potential V applied to the movable conductor 22e is adjusted in accordance with the device parameters acquired by the ion source state acquisition unit 401. ｃｔｌ In the ion extraction device according to this embodiment, the additional potential V ａｄｄ and a control potential V applied to the movable conductor 22e in accordance with the effective extraction current. ｃｔｌ may be controlled.

[0229] In the fourth step, the second distance Gap is set so that the tilt angle x1′ in the phase space distribution in the x1 direction (see FIG. 31(b)) falls within the design range of the beamline A. ２is adjusted. Here, the extracted current I ｅｘｔ Ga m －１／２ ・V ｅｘｔ ３／２ ・Gap ２ －２ The relational expression that the temperature is approximately proportional to

[0230] In the fifth step, the orbital axis of the ion beam IB is adjusted by adjusting the position, attitude, aperture shape, etc. of the suppression electrode 22a, etc. This adjustment changes the center of gravity of the phase space distribution, but does not change its shape.

[0231] As a sixth step, the first distance Gap is calculated as described above with reference to FIG. １ In this way, in the ion extraction device according to this embodiment, the first distance Gap between the first opening OP1 and the fourth opening OP4 in the traveling direction of the ion beam IB is adjusted. １ However, the ion beam IB may be controlled to have a desired phase space distribution when irradiated onto the wafer, depending on the state of the ion source 20 that can be acquired by the ion source state acquisition unit 401. In addition, in the ion extraction apparatus according to this embodiment, the additional potential V ａｄｄ and a first distance Gap between the first opening OP1 and the fourth opening OP4 in the traveling direction of the ion beam IB according to the effective extraction current. １ may be controlled.

[0232] Depending on the density of the plasma generated by the ion source 20, the first distance Gap １ In some cases, a desired ion beam IB can be obtained without adjusting the first distance Gap. １ Alternatively, the movable conductor 22e may be substantially disabled by fixing the .times. ...

[0233] The ion extraction system according to this embodiment may adaptively control the various parameters described above by utilizing an angle measurement device provided in the beam profiler 46. In this case, the angle measurement device constitutes a phase space distribution measurement device that measures the phase space distribution of the ion beam IB downstream of the reference electrode 22b. A first distance Gap between the first aperture OP1 and the fourth aperture OP4 in the traveling direction of the ion beam IB is adjusted in accordance with the phase space distribution of the ion beam IB measured by the phase space distribution measurement device. １ , and the control potential V applied to the movable conductor 22e ｃｔｌ (i.e., additional potential V ａｄｄ ) may be controlled.

[0234] 36 is a schematic diagram of an ion extraction device according to a second embodiment. The ion extraction device includes an ion source 20 that generates plasma containing desired ions DI, an extraction unit 22 that extracts ions containing the desired ions DI from the ion source 20 or the arc chamber 20a to generate a first ion beam IB1, a mass analysis magnet 24a serving as a first beam deflection device that deflects the first ion beam IB1 by applying a magnetic field or a magnetic field, a mass analysis slit 24b (see FIG. 1, etc.) serving as a first separation opening that passes the desired ions DI contained in the first ion beam IB1 deflected by the mass analysis magnet 24a, and a potential difference setting unit 403 that sets a potential difference between a first region R1, which is at least a portion between the outlet of the extraction unit 22 and the entrance of the mass analysis magnet 24a, and a second region R2, which is at least a portion between the entrance and exit of the mass analysis magnet 24a. When the first ion beam IB1 passes through the mass analysis slit 24b, the metamorphic ions MI are reduced as described below, and the second ion beam IB1 becomes a second ion beam containing a large amount of desired ions DI. This second ion beam is irradiated onto the wafer in the implantation processing chamber 14.

[0235] As shown in the first region R1 of Fig. 36, the first ion beam IB1 extracted from the ion source 20 by the extraction unit 22 may contain undesired ions OI in addition to desired ions DI. For example, when the desired ions DI are divalent ions, the undesired ions OI are singly charged dimer ions. The divalent ions as the desired ions DI are conveniently referred to as X ２＋ Here, "X" represents a unit atom or a unit molecule having a mass M, and "2+" represents the charge of the ion (positive divalent), with the unit charge being e and the total charge being 2e. A dimer ion as an undesired ion OI is conveniently represented as X ２ ＋ Here, "X ２ " indicates that there are two unit atoms or molecules with mass M (hence, the total mass is 2M), and "+" indicates the charge of the ion (positive monovalent), with the unit charge being e and the total charge being e. Note that the desired ion DI may be a positive or negative monovalent ion, a negative divalent ion, or a positive or negative trivalent or higher polyvalent ion.

[0236] As described above, when the desired ions DI with mass M and charge 2e and the undesired ions OI with mass 2M and charge e enter the mass analysis magnet device 24a, they are deflected to different central orbits by the applied magnetic field, and can be appropriately separated by the mass analysis slit 24b or the like in the subsequent stage (i.e., the undesired ions OI are appropriately removed). This is because the Larmor radii, which are the radii of rotational motion in the magnetic field, differ between the desired ions DI and the undesired ions OI.

[0237] Specifically, the Larmor radius r is r = (2mE) １／２ / (qB), where m is the mass of the ion, E is the energy of the ion, q is the charge of the ion, and B is the magnetic flux density applied by the mass analysis magnet device 24a. The desired ions DI and undesired ions OI are excited by the extraction potential V ｅｘｔ 2 eV, respectively. ｅｘｔ and eV ｅｘｔ In this case, the Larmor radius of the desired ion DI is (2 M 2 eV ｅｘｔ ) １／２ / (2eB)=(MV ｅｘｔ ) １／２ / (e １／２ B), and the Larmor radius of the unwanted ion OI is (2·2 M·eV ｅｘｔ ) １／２ / (eB)=2(MV ｅｘｔ ) １／２ / (e １／２ B). In this way, the Larmor radius of the undesired ions OI is twice the Larmor radius of the desired ions DI, and the ions DI and OI are appropriately separated through the mass analysis magnet device 24a. Note that here, the potential difference provided by the potential difference setting unit 403 is set to zero for convenience.

[0238] However, some of the undesired ions OI may be transformed into modified ions MI by undergoing at least one of decomposition and charge conversion when passing through the first region R1. ２ ＋ If X of mass M and charge e ＋ may be generated as a deformed ion MI. For example, suppose that a deformed ion MI is generated near the boundary between the first region R1 and the second region R2. In this case, the energy of the unwanted ion OI before being decomposed into the deformed ion MI is, as described above, 1 eV ｅｘｔ Since this unwanted ion OI is divided into a modified ion MI and a neutral atom or molecule N, the energy of the modified ion MI is eV ｅｘｔ The Larmor radius of this metamorphic ion MI is (2 M eV ｅｘｔ / 2) １／２ / (eB)=(MV ｅｘｔ ) １／２ / (e １／２ B), which is approximately equal to the Larmor radius of the desired ion DI.

[0239] Therefore, the modified ions MI cannot be separated from the desired ions DI by the mass analysis magnet device 24a and the mass analysis slit 24b alone. Note that the modified ions MI are not limited to this example, and may be any ions having a central orbit or Larmor radius substantially equal to that of the desired ions DI (i.e., ions that cannot be substantially separated from the desired ions DI by the mass analysis magnet device 24a and the mass analysis slit 24b alone). It is not desirable to irradiate the second ion beam containing such modified ions MI onto a wafer in the implantation processing chamber 14.

[0240] Therefore, in this embodiment, a potential difference setting unit 403 is provided. The potential difference set by the potential difference setting unit 403 is set so that modified ions MI and desired ions DI, which are generated when some of the ions in the first ion beam IB1 (for example, undesired ions OI) passing through the first region R1 are subjected to at least one of decomposition and charge conversion, have different central orbits in the second region R2, and at least some of the modified ions MI cannot pass through the mass analysis slit 24b.

[0241] For example, the potential difference setting unit 403 sets a first reference potential V ｒ１ is applied to the second region R2, and the first reference potential V ｒ１ A first bias potential V ｂ１ The first reference potential V ｒ１ is the ground potential V as a third reference potential applied to the reference electrode 22b. ｇｎｄ However, for the sake of convenience, it is assumed below that the first reference potential V ｒ１ A potential higher than (=0) is conveniently expressed as a positive potential, and such a first reference potential V ｒ１ A potential lower than (=0) is conveniently expressed as a negative potential.

[0242] In addition, a fifth opening OP5 through which the first ion beam IB1 passes is provided at at least one of the entrance and exit of the mass analysis magnet device 24a, and the potential V ｂ１ a lower second suppression potential V ｓｕｐ２A second suppression electrode 24e (inlet side) and / or 24f (outlet side) to which a voltage is applied may be provided. The fifth opening OP5 may have a slit shape with a long opening width in the horizontal direction and a short opening width in the vertical direction, similar to the front slit 20c ( FIG. 29 , etc.). Note that the fifth opening OP5 may be provided as a separate member from the second suppression electrodes 24e and / or 24f.

[0243] In the example of FIG. 36, the potential difference setting unit 403 sets a first reference potential V ｒ１ (not shown) is applied to the second region R2, and a negative first bias potential V ｂ１ A first bias potential V ｂ１ may be applied to the housing of the mass analysis magnet device 24a, for example.

[0244] 37 is a diagram showing an example of a change in potential along the direction of travel of the first ion beam IB across the first region R1 and the second region R2. The potential at the front slit 20c provided at the start position of the first region R1 is equal to the extraction potential V ｅｘｔ (For example, "+40 kV"). The potential decreases approximately linearly from the front slit 20c to the suppression electrode 22a (in this embodiment, the movable conductor 22e is not provided). The potential at the suppression electrode 22a decreases approximately linearly from the suppression potential V ｓｕｐ (e.g., "-2 kV") in the downstream region. The first reference potential V ｒ１ is maintained.

[0245] Subsequently, when the sample approaches the entrance of the mass analysis magnet device 24a and / or the second region R2, the potential is increased to the second suppression potential V ｓｕｐ２ As shown in the figure, the second suppression potential V ｓｕｐ２ is the first suppression potential V ｓｕｐ and the first reference potential V ｒ１ The main body of the subsequent mass analysis magnet device 24a is supplied with a negative first bias potential V ｂ１ This first bias potential V ｂ１ is the second suppression potential V ｓｕｐ２higher than the first reference potential V ｒ１ At the exit of the mass analysis magnet device 24a and / or the second region R2, the potential is set to a second suppression potential V ｓｕｐ２ The temperature drops locally to

[0246] The modified ions MI generated by the modification of the unwanted ions OI as dimer ions are applied to the extraction potential V ｅｘｔ The aforementioned energy eV ｅｘｔ / 2 and the first bias potential V ｂ１ Energy by - eV ｂ１ Therefore, the total energy of the metamorphic ion MI is e(V ｅｘｔ / 2-V ｂ１ On the other hand, the divalent desired ions DI are drawn by the extraction potential V ｅｘｔ Energy 2 eV ｅｘｔ and the first bias potential V ｂ１ Energy by -2 eV ｂ１ Therefore, the total energy of the desired ion DI is 2e(V ｅｘｔ -V ｂ１ ) is expressed as

[0247] The first bias potential V ｂ１ Due to the change in energy caused by ... ｅｘｔ -V ｂ１ )) １／２ / (2eB)=(M(V ｅｘｔ -V ｂ１ )) １／２ / (e １／２ B), whereas the Larmor radius of the metamorphic ion MI is (2 M e(V ｅｘｔ / 2-V ｂ１ )) １／２ / (eB)=(M(V ｅｘｔ -2V ｂ１ )) １／２ / (e １／２As shown by the dotted line in FIG. 36, the negative first bias potential V ｂ１ As a result, the central trajectory of the modified ion MI deviates outward from the central trajectory (solid line) of the desired ion DI. The modified ion MI deviated outward in this manner is blocked by the mass analysis slit 24b or the like serving as the first separation aperture in the subsequent stage.

[0248] 38 shows specific examples of central trajectories of various ions relative to the extraction direction of the first ion beam IB. "++" represents the central trajectory of a positively doubly charged desired ion DI, "Dimer" represents the central trajectory of an undesired ion OI as a singly charged dimer ion, "P1" represents the central trajectory of a modified ion MI generated at position P1 in FIG. 36 (just before entering the mass analysis magnet 24a), "P2" represents the central trajectory of a modified ion MI generated at position P2 in FIG. 36 (just after entering the mass analysis magnet 24a), and "P3" represents the central trajectory of a modified ion MI generated at position P3 in FIG. 36 (even later than position P2).

[0249] As shown schematically by the arrows in the enlarged partial view of Figure 38, the central orbit of the deformed ion MI varies depending on the generation positions P1, P2, and P3. Here, when the generation position of the deformed ion MI changes from the upstream side P1 to the downstream side P2, the central orbit of the deformed ion MI generated at the position P2 approaches but does not coincide with the central orbit of the desired ion DI. When the generation position of the deformed ion MI changes further downstream to P3, the central orbit of the deformed ion MI generated at the position P3 moves away from the central orbit of the desired ion DI. In this way, when the negative first bias potential V is applied to the second region R2 and / or the mass analysis magnet device 24a, ｂ１ 36 to 38, the first bias potential V applied to the second region R2 and / or the mass analysis magnet device 24a can be effectively prevented from interfering with the central orbit of the desired ion DI, regardless of the position where the deformed ions MI are generated. ｂ１ is preferably negative.

[0250] 39 shows the potential difference setting unit 403 setting the first reference potential V ｒ１(not shown) is applied to the second region R2, and a positive first bias potential V ｂ１ The first bias potential V ｂ１ may be applied to the housing of the mass analysis magnet device 24a, for example.

[0251] 40 is a schematic diagram showing an example of a change in potential along the traveling direction of the first ion beam IB across the first region R1 and the second region R2. The potential at the front slit 20c is the extraction potential V ｅｘｔ (For example, "+40 kV"). The potential decreases approximately linearly from the front slit 20c to the suppression electrode 22a (in this embodiment, the movable conductor 22e is not provided). The potential at the suppression electrode 22a decreases approximately linearly from the suppression potential V ｓｕｐ In the downstream region, the potential is set to zero by the reference electrode 22b provided at the start position of the first region R1. ｒ１ is maintained.

[0252] Subsequently, when the sample approaches the entrance of the mass analysis magnet device 24a and / or the second region R2, the potential is increased to the second suppression potential V ｓｕｐ２ As shown in the figure, the second suppression potential V ｓｕｐ２ is the first suppression potential V ｓｕｐ and the first reference potential V ｒ１ The main body of the subsequent mass analysis magnet device 24a is supplied with a positive first bias potential V ｂ１ This first bias potential V ｂ１ is the first reference potential V ｒ１ At the exit of the mass analysis magnet device 24a and / or the second region R2, the potential is set to a second suppression potential V ｓｕｐ２ The temperature drops locally to

[0253] As shown by the dotted line in FIG. 39, the positive first bias potential V ｂ１As a result, the central trajectory of the modified ion MI deviates inward from the central trajectory (solid line) of the desired ion DI. The modified ion MI deviated inward in this manner is blocked by the mass analysis slit 24b or the like serving as the first separation aperture in the subsequent stage.

[0254] 41 shows specific examples of central trajectories of various ions relative to the extraction direction of the first ion beam IB. "++" represents the central trajectory of a positively doubly charged desired ion DI, "Dimer" represents the central trajectory of an undesired ion OI as a singly charged dimer ion, "P1" represents the central trajectory of a modified ion MI generated at position P1 in FIG. 39 (just before entering the mass analysis magnet 24a), "P2" represents the central trajectory of a modified ion MI generated at position P2 in FIG. 39 (just after entering the mass analysis magnet 24a), and "P3" represents the central trajectory of a modified ion MI generated at position P3 in FIG. 39 (even later than position P2).

[0255] As shown by the arrows in the partially enlarged view of Fig. 41, the central orbit of the modified ion MI varies depending on the generation positions P1, P2, and P3. Here, the central orbit of the modified ion MI generated at the upstream position P1 is to the left of the central orbit of the desired ion DI, whereas the central orbit of the modified ion MI generated at the downstream position P2 is to the right of the central orbit of the desired ion DI. This means that the central orbit of the modified ion MI generated between P1 and P2 (particularly near P2) interferes with the central orbit of the desired ion DI and becomes indistinguishable from it. In this way, when the positive first bias potential V is applied to the second region R2 and / or the mass analysis magnet device 24a, ｂ１ 39 to 41, depending on the position at which the deformed ions MI are generated, their central trajectories may interfere with the central trajectories of the desired ions DI. Therefore, as described above, the first bias potential V applied to the second region R2 and / or the mass analysis magnet device 24a ｂ１ is preferably negative.

[0256] Fig. 42 is a schematic diagram of the ion extraction device according to the third embodiment. The same components as those in the second embodiment shown in Fig. 36 etc. are denoted by the same reference numerals, and redundant explanations will be omitted.

[0257] In this embodiment, the potential difference setting unit 403 applies a second reference potential V ｒ２ is applied to the first region R1, and the second reference potential V ｒ２ A second bias potential V ｂ２ The second reference potential V ｒ２ is the ground potential V as a third reference potential applied to the reference electrode 22b. ｇｎｄ For convenience, the second reference potential V may be equal to zero (0) in the following description. ｒ２ A potential higher than (=0) is conveniently expressed as a positive potential, and such a second reference potential V ｒ２ A potential lower than (=0) is conveniently expressed as a negative potential.

[0258] Further, a fifth opening OP5 through which the first ion beam IB1 passes is provided at the entrance of the mass analysis magnet device 24a, and the potential V ｒ２ a lower negative second suppression potential V ｓｕｐ２ A second suppression electrode 24e to which a voltage of 0.05 V is applied may be provided. The fifth opening OP5 may have a slit shape with a long opening width in the horizontal direction and a short opening width in the vertical direction, similar to the front slit 20c ( FIG. 29 , etc.). Note that the fifth opening OP5 may be provided as a separate member from the second suppression electrode 24e.

[0259] In the example of FIG. 42, the potential difference setting unit 403 applies a zero second reference potential V ｒ２ is applied to the first region R1, and a positive second bias potential V ｂ２ A second bias potential V ｂ２ may be applied to, for example, a housing 22g that surrounds most of the first region R1.

[0260] 43 is a diagram showing an example of a change in potential along the traveling direction of the first ion beam IB across the first region R1 and the second region R2. The potential at the front slit 20c is the extraction potential V ｅｘｔ(For example, "+40 kV"). The potential decreases approximately linearly from the front slit 20c to the suppression electrode 22a (in this embodiment, the movable conductor 22e is not provided). The potential at the suppression electrode 22a decreases approximately linearly from the suppression potential V ｓｕｐ In the downstream region, the potential is set to a positive second bias potential V ｂ２ is maintained.

[0261] Subsequently, when the sample approaches the entrance of the mass analysis magnet device 24a and / or the second region R2, the second suppression electrode 24e causes the potential to be reduced to the second suppression potential V ｓｕｐ２ As shown in the figure, the second suppression potential V ｓｕｐ２ is the first suppression potential V ｓｕｐ and the second bias potential V ｂ２ The main body of the subsequent mass analysis magnet device 24a is supplied with a second reference potential V ｒ２ is applied.

[0262] As shown by the dotted line in FIG. 42, the positive second bias potential V ｂ２ As a result, the central trajectory of the modified ion MI deviates outward from the central trajectory (solid line) of the desired ion DI. The modified ion MI deviated outward in this manner is blocked by the mass analysis slit 24b or the like serving as the first separation aperture in the subsequent stage.

[0263] Figure 44 shows specific examples of central trajectories of various ions relative to the extraction direction of the first ion beam IB. "++" represents the central trajectory of a positively doubly charged desired ion DI, "Dimer" represents the central trajectory of an undesired ion OI as a singly charged dimer ion, "P1" represents the central trajectory of a modified ion MI generated at position P1 in Figure 42 (just before entering the mass analysis magnet system 24a), "P2" represents the central trajectory of a modified ion MI generated at position P2 in Figure 42 (just after entering the mass analysis magnet system 24a), and "P3" represents the central trajectory of a modified ion MI generated at position P3 in Figure 42 (even later than position P2).

[0264] As shown schematically by the arrows in the partially enlarged view of Fig. 44, the central orbit of the deformed ion MI varies depending on the generation positions P1, P2, and P3. Here, when the generation position of the deformed ion MI changes from P1 on the upstream side to P2 on the downstream side, the central orbit of the deformed ion MI generated at the position P2 approaches but does not coincide with the central orbit of the desired ion DI. When the generation position of the deformed ion MI changes further downstream to P3, the central orbit of the deformed ion MI generated at the position P3 moves away from the central orbit of the desired ion DI. In this way, when the positive second bias potential V ｂ２ 42 to 44, the second bias potential V applied to the first region R1 and / or the housing 22g can be effectively prevented from interfering with the central trajectory of the desired ion DI, regardless of the position where the deformed ion MI is generated. ｂ２ is preferably positive.

[0265] 45 shows the potential difference setting unit 403 setting the second reference potential V ｒ２ is applied to the first region R1, and a negative second bias potential V ｂ２ The second bias potential V ｂ２ may be applied to, for example, a housing 22g that surrounds most of the first region R1.

[0266] 46 is a schematic diagram showing an example of a change in potential along the traveling direction of the first ion beam IB across the first region R1 and the second region R2. The potential at the front slit 20c is the extraction potential V ｅｘｔ (For example, "+40 kV"). The potential decreases approximately linearly from the front slit 20c to the suppression electrode 22a (in this embodiment, the movable conductor 22e is not provided). The potential at the suppression electrode 22a decreases approximately linearly from the second suppression potential V ｓｕｐ２ In the downstream region, the potential is set to a negative second bias potential V ｂ２ is maintained.

[0267] Subsequently, when the sample approaches the entrance of the mass analysis magnet device 24a and / or the second region R2, the second suppression electrode 24e causes the potential to be reduced to the second suppression potential V ｓｕｐ２ As shown in the figure, the second suppression potential V ｓｕｐ２ is the second reference potential V ｒ２ and the second bias potential V ｂ２ The main body of the subsequent mass analysis magnet device 24a is supplied with a second reference potential V ｒ２ is applied.

[0268] As shown by the dotted line in FIG. 45, the negative second bias potential V ｂ２ As a result, the central trajectory of the modified ion MI deviates inward from the central trajectory (solid line) of the desired ion DI. The modified ion MI deviated inward in this manner is blocked by the mass analysis slit 24b or the like serving as the first separation aperture in the subsequent stage.

[0269] Figure 47 shows specific examples of central trajectories of various ions relative to the extraction direction of the first ion beam IB. "++" represents the central trajectory of a positively doubly charged desired ion DI, "Dimer" represents the central trajectory of an undesired ion OI as a singly charged dimer ion, "P1" represents the central trajectory of a modified ion MI generated at position P1 in Figure 45 (just before entering the mass analysis magnet system 24a), "P2" represents the central trajectory of a modified ion MI generated at position P2 in Figure 45 (just after entering the mass analysis magnet system 24a), and "P3" represents the central trajectory of a modified ion MI generated at position P3 in Figure 45 (even later than position P2).

[0270] As shown schematically by the arrows in the partially enlarged view of Fig. 47, the central orbit of the modified ion MI varies depending on the generation positions P1, P2, and P3. Here, the central orbit of the modified ion MI generated at the upstream position P1 is on the left side of the central orbit of the desired ion DI, whereas the central orbit of the modified ion MI generated at the downstream position P2 is on the right side of the central orbit of the desired ion DI. This means that the central orbit of the modified ion MI generated between P1 and P2 (particularly near P2) interferes with the central orbit of the desired ion DI and becomes indistinguishable from it. In this way, when the negative second bias potential V is applied to the first region R1 and / or the housing 22g, ｂ２ 45 to 47, in which the second bias potential V applied to the first region R1 and / or the housing 22g is applied, the central trajectory of the deformed ions MI may interfere with the central trajectory of the desired ions DI depending on the position at which the deformed ions MI are generated. ｂ２ is preferably positive.

[0271] As shown schematically in Fig. 36 (illustration is omitted in similar Figs. 39, 42, and 45), the ion extraction system according to this embodiment may include a trajectory calculator 404 that calculates the central trajectories of the desired ions DI (solid lines) and the deformed ions MI (dotted lines) based on the potential difference set by a potential difference setting unit 403. The calculation by the trajectory calculator 404 takes into account the Larmor radius and the generation positions P1, P2, and P3 of the deformed ions MI. The trajectory calculator 404 calculates the difference between the central trajectories of the desired ions DI and the deformed ions MI in the deflection direction (x direction) by the mass analysis magnet device 24a serving as the first beam deflector, for example, at the position of the mass analysis slit 24b (Fig. 1, etc.) serving as the first separation aperture.

[0272] The ion extraction system according to this embodiment may also include a beam size adjuster 405 that adjusts the size or width of the first ion beam IB1 in the deflection direction by the mass analysis magnet device 24a at the position of the mass analysis slit 24b. The beam size adjuster 405 may adjust the size or width of the first ion beam IB1 at the position of the mass analysis slit 24b, for example, based on the central trajectories of the desired ions DI and the modified ions MI calculated by the trajectory calculator 404. Specifically, the beam size adjuster 405 adjusts the size or width of the first ion beam IB1 so that most of the desired ions DI can pass through the mass analysis slit 24b and most of the modified ions MI cannot pass through the mass analysis slit 24b.

[0273] The beam size adjustment unit 405 may adjust the size or width of the ion beam exiting the mass analysis unit 24, with reference to the size or width of the ion beam measured by the first beam current measurement device 406. An example of the first beam current measurement device 406 is the injector Faraday cup 24c described above with reference to Fig. 1 etc. This injector Faraday cup 24c may be provided downstream of the mass analysis slit 24b as in Fig. 1 etc., or may be provided downstream of the mass analysis magnet device 24a and upstream of the mass analysis slit 24b.

[0274] The first beam current measurement device 406 measures the size or width of the ion beam in the deflection direction (x direction) by the mass analysis magnet device 24a serving as the first beam deflection device. When provided downstream of the mass analysis slit 24b, the first beam current measurement device 406 may measure the size or width of the first ion beam in the deflection direction by measuring the beam current of the second ion beam while changing the magnetic field applied by the mass analysis magnet device 24a. When provided upstream of the mass analysis slit 24b, the first beam current measurement device 406 may measure the size or width of the first ion beam in the deflection direction by measuring the beam current of the first ion beam while moving in the deflection direction (e.g., while the injector Faraday cup 24c serving as the first beam current measurement device 406 is driven by the injector driver 24d).

[0275] The beam size adjusting unit 405 adjusts the extraction electric field distribution in the vicinity of the first aperture OP1 through which the first ion beam is extracted from the ion source 20 to adjust the size or width of the ion beam by adjusting the distance between the first aperture OP1 in the ion source 20 and the suppression electrode 22a serving as the first suppression electrode (for example, the first distance Gap in FIG. 29 etc.). １ and the second distance Gap ２ As described above, the suppression electrode 22a as the first suppression electrode has the third opening OP3 through which the first ion beam passes, and the third reference potential V ｇｎｄ Lower first suppression potential V ｓｕｐ is applied.

[0276] The beam size adjusting unit 405 adjusts the extraction electric field distribution in the vicinity of the first aperture OP1 through which the first ion beam is extracted from the ion source 20 to adjust the size or width of the ion beam by adjusting the distance between the first aperture OP in the ion source 20 and the movable conductor 22e (for example, the first distance Gap in FIG. 29 etc.). １ As described above, the movable conductor 22e has the fourth opening OP4 through which the first ion beam passes, and the distance between the fourth opening OP4 and the first opening OP1 through which the first ion beam is extracted from the ion source 20 is variable.

[0277] The beam size adjusting unit 405 adjusts the extraction electric field distribution in the vicinity of the first aperture OP1 through which the first ion beam is extracted from the ion source 20, thereby adjusting the size or width of the ion beam. ｃｔｌ (or additional potential V ａｄｄ As described above, the movable conductor 22e is supplied with the third reference potential V ｇｎｄ Higher control potential V ｃｔｌ is applied.

[0278] The beam size adjusting unit 405 adjusts the second suppression potential V applied to the second suppression electrodes 24e and / or 24f to adjust the size or width of the ion beam. ｓｕｐ２ may be adjusted.

[0279] The beam size adjustment unit 405 may adjust the size or width of the first ion beam based on the phase space distribution of the second ion beam measured by the phase space distribution measurement unit 407. An example of the phase space distribution measurement unit 407 is an angle measurement device provided in the beam profiler 46 described above. This phase space distribution measurement unit 407 measures the phase space distribution of the second ion beam downstream of the mass analysis slit 24b serving as the first separation aperture. Note that a beam size estimation unit 408 may be provided that estimates the size or width of the first ion beam in the deflection direction (x direction) at the position of the mass analysis slit 24b based on the phase space distribution of the second ion beam measured by the phase space distribution measurement unit 407. In this case, the beam size adjustment unit 405 may adjust the size or width of the first ion beam while referring to the size or width of the first ion beam estimated by the beam size estimation unit 408.

[0280] In addition to or instead of the beam size adjuster 405, the ion extraction system according to this embodiment may include an aperture width adjuster 409 that adjusts the aperture width of the mass analysis slit 24b (first separation aperture) in the deflection direction (x direction) by the mass analysis magnet device 24a (first beam deflector). The aperture width adjuster 409 may adjust the aperture width of the mass analysis slit 24b in the deflection direction, for example, in accordance with the difference between the central orbits of the desired ions DI and the modified ions MI in the deflection direction calculated by the trajectory calculator 404 and the size or width of the ion beam in the deflection direction measured by the first beam current measuring device 406. Specifically, the aperture width adjuster 409 adjusts the aperture width of the mass analysis slit 24b so that the beam around the central orbit of the desired ions DI can pass through the mass analysis slit 24b and so that the beam around the central orbit of the modified ions MI cannot pass through the mass analysis slit 24b.

[0281] A second beam deflection device 410 may be provided downstream of the mass analysis slit 24b serving as the first separation aperture, and deflects the second ion beam by applying an electric field or a magnetic field. Examples of the second beam deflection device 410 include the beam scanning unit 28 (see FIG. 2, etc.) and the AEF electrode pair 34a, 34b (see FIG. 1, etc.). The deflection direction of the second ion beam by the second beam deflection device 410 may intersect the direction of travel of the second ion beam (z direction) and the deflection direction of the first ion beam by the mass analysis magnet device 24a serving as the first beam deflection device (x direction) as in the case of the beam scanning unit 28, or may be substantially the same as the deflection direction of the first ion beam by the mass analysis magnet device 24a serving as the first beam deflection device (x direction) as in the case of the AEF electrode pair 34a, 34b. The second beam deflection device 410 adjusts the electric field or magnetic field applied to the second ion beam, for example, so that the central trajectory of the desired ion DI calculated by the trajectory calculation unit 404 becomes the desired central trajectory (i.e., so that the desired ion DI passes through the desired trajectory).

[0282] An energy analysis slit 34c (see FIG. 1, etc.) may be provided downstream of the second beam deflection device 410 (the beam scanning unit 28 and / or the AEF electrode pair 34a, 34b) as a second separation aperture that separates and passes desired ions DI and modified ions MI according to an electric field or a magnetic field. A second beam current measurement device 411 that measures the beam currents of the desired ions DI and modified ions MI may be provided downstream of the energy analysis slit 34c. Examples of the second beam current measurement device 411 include the tuning cups 38a to 38d described above. The second beam current measurement device 411 may measure the ratio of the beam currents of the desired ions DI and modified ions MI. The ion irradiation prohibition unit 412 prohibits irradiation of the second ion beam onto the wafer when the ratio of the beam currents of the desired ions DI and modified ions MI measured by the second beam current measurement device 411 is outside a tolerance range.

[0283] When the ratio of the beam currents of the desired ions DI and the modified ions MI measured by the second beam current measuring device 411 is within the range requiring adjustment, the beam size adjusting unit 405 may adjust the size or width of the first ion beam at the position of the mass analysis slit 24b as the first separation aperture.

[0284] When the ratio of the beam currents of the desired ions DI and the modified ions MI measured by the second beam current measuring device 411 is within the range requiring adjustment, the beam shaping unit 26 or other electric field application device may adjust the electric field applied to the ion beam. This electric field application device is preferably provided between the mass analysis magnet device 24a as the first beam deflection device and the beam scanning unit 28 and / or the AEF electrode pair 34a, 34b as the second beam deflection device 410 so as to apply an electric field to prevent the transport of the modified ions MI.

[0285] Some aspects of the present disclosure are as follows.

[0286] (Aspect 1) An ion implantation apparatus comprising: an ion source that generates plasma containing desired ions; an extraction unit that extracts a group of ions containing the desired ions from a first opening in the ion source to generate an ion beam; and an implantation processing chamber that irradiates a wafer with the ion beam, wherein the extraction unit comprises, from downstream to upstream in a traveling direction of the ion beam: a reference electrode that has a second opening through which the ion beam passes and to which a reference potential is applied; a suppression electrode that has a third opening through which the ion beam passes and to which a suppression potential lower than the reference potential is applied; and a movable conductor that has a fourth opening through which the ion beam passes and whose distance from the first opening in the traveling direction is variable.

[0287] (Aspect 2) The ion implantation apparatus according to aspect 1, wherein the first opening, the second opening, the third opening, and the fourth opening are slits elongated in the same direction.

[0288] (Aspect 3) The ion implantation apparatus according to Aspect 1 or 2, wherein the ion beam passes through the first opening, the fourth opening, the third opening, and the second opening in that order, and the distance between the first opening and the fourth opening is controlled so that the ion beam has a desired phase space distribution when irradiated onto the wafer.

[0289] (Aspect 4) The ion implantation apparatus according to Aspect 1 or 2, wherein an extraction potential higher than the reference potential is applied to the ion source, and a control potential that is a potential between the extraction potential and the reference potential is applied to the movable conductor in order to control a phase space distribution of the ion beam extracted from the second opening.

[0290] (Aspect 5) The ion implantation apparatus according to aspect 1 or 2, wherein the distance between the suppression electrode and the reference electrode in the direction of travel is constant.

[0291] (Aspect 6) The ion implantation apparatus according to aspect 1 or 2, wherein the distance between the movable conductor and the suppression electrode in the traveling direction is variable.

[0292] (Aspect 7) An ion implantation apparatus according to aspect 1 or 2, wherein the distance between the first opening and the fourth opening in the traveling direction is controlled depending on the state of the ion source so that the ion beam has a desired phase space distribution when irradiated onto the wafer.

[0293] (Aspect 8) The ion implantation apparatus according to aspect 1 or 2, further comprising a phase space distribution measurement device downstream of the reference electrode for measuring a phase space distribution of the ion beam.

[0294] (Aspect 9) An ion implantation apparatus according to aspect 8, wherein at least one of the distance between the first opening and the fourth opening in the propagation direction and the control potential applied to the movable conductor is controlled according to the phase space distribution of the ion beam measured by the phase space distribution measuring device.

[0295] (Aspect 10) The ion implantation apparatus according to aspect 1 or 2, further comprising an ion source state acquisition unit that acquires an apparatus parameter that reflects the state of the ion source.

[0296] (Aspect 11) The ion implantation apparatus according to aspect 10, wherein the apparatus parameters are at least one of a gas species, a gas flow rate, a vaporizer temperature, an arc current, an arc voltage, a source magnet current, which are set as parameters of the ion source, an effective extraction current which is the total amount of charge carried per unit time by the group of ions including the desired ions extracted from the ion source, and a beam current of an ion beam irradiated onto the wafer.

[0297] (Aspect 12) The ion implantation apparatus according to aspect 10, wherein at least one of a distance between the first opening and the fourth opening in the traveling direction and a control potential applied to the movable conductor is controlled according to the apparatus parameters acquired by the ion source state acquisition unit.

[0298] (Aspect 13) The ion implantation apparatus according to aspect 1 or 2, further comprising an electrical information acquisition unit that acquires a potential difference between an extraction potential applied to the ion source and a control potential applied to the movable conductor, and an effective extraction current that is the total amount of charge carried per unit time by the group of ions including the desired ions extracted from the ion source.

[0299] (Aspect 14) The ion implantation device according to aspect 13, wherein at least one of the distance between the first opening and the fourth opening in the traveling direction and the control potential applied to the movable conductor is controlled according to the potential difference and the effective extraction current acquired by the electrical information acquisition unit.

[0300] (Aspect 15) The ion implanter according to aspect 1 or 2, wherein the same potential is applied to the ion source and the movable conductor.

[0301] (Aspect 16) The ion implantation apparatus according to aspect 1 or 2, wherein the fourth opening is larger in size than the first opening.

[0302] (Aspect 17) An ion extraction device comprising: an ion source that generates plasma containing desired ions; and an extraction unit that extracts a group of ions containing the desired ions from a first opening in the ion source to generate an ion beam, wherein the extraction unit comprises, from downstream to upstream in a traveling direction of the ion beam: a reference electrode that has a second opening through which the ion beam passes and to which a reference potential is applied; a suppression electrode that has a third opening through which the ion beam passes and to which a suppression potential lower than the reference potential is applied; and a movable conductor that has a fourth opening through which the ion beam passes and whose distance from the first opening in the traveling direction is variable.

[0303] (Aspect 18) An ion implantation apparatus comprising: an ion source that generates plasma containing desired ions; an extraction section that extracts a group of ions containing the desired ions from the ion source to generate a first ion beam; a first beam deflection device that deflects the first ion beam by applying a magnetic field; a first separation opening that allows the desired ions contained in the first ion beam deflected by the first beam deflection device to pass; a potential difference setting section that sets a potential difference between a first region that is at least a part of an area between an outlet of the extraction section and an entrance of the first beam deflection device, and a second region that is at least a part of an area between the entrance and exit of the first beam deflection device; and an implantation processing chamber that irradiates a wafer with the second ion beam containing the desired ions that have passed through the first separation opening, wherein the potential difference is set so that modified ions generated by at least one of decomposition and charge conversion of some of the group of ions in the first ion beam passing through the first region and the desired ions have central orbits that differ from each other in the second region, and at least some of the modified ions cannot pass through the first separation opening.

[0304] (Aspect 19) The ion implantation apparatus according to aspect 18, wherein the potential difference setting unit applies a first reference potential to the first region and applies a first bias potential different from the first reference potential to the second region.

[0305] (Aspect 20) The ion implantation apparatus according to aspect 18, wherein the potential difference setting unit applies a second reference potential to the second region and applies a second bias potential different from the second reference potential to the first region.

[0306] (Aspect 21) The ion implantation apparatus according to any one of aspects 18 to 20, further comprising a first beam current measurement device that measures a size of the first ion beam in a direction of deflection by the first beam deflection device.

[0307] (Aspect 22) The ion implantation apparatus according to aspect 21, wherein the first beam current measurement device is provided downstream of the first separation opening and measures the beam current of the second ion beam while changing the magnetic field applied by the first beam deflection device.

[0308] (Aspect 23) The ion implantation apparatus according to aspect 21, wherein the first beam current measurement device is provided upstream of the first separation opening and measures the beam current of the first ion beam while moving in the deflection direction.

[0309] (Aspect 24) The ion implantation apparatus according to aspect 21, wherein the opening width of the first separation opening in the deflection direction is variable.

[0310] (Aspect 25) An ion implantation apparatus according to aspect 24, wherein the aperture width is adjusted according to the difference in the central orbits of the desired ions and the modified ions in the deflection direction by the first beam deflection device at the position of the first separation aperture and the size of the first ion beam in the deflection direction.

[0311] (Aspect 26) The ion implantation apparatus according to any one of aspects 18 to 20, further comprising a trajectory calculation unit that calculates the central trajectories of the desired ions and the modified ions based on the potential difference set by the potential difference setting unit.

[0312] (Aspect 27) The ion implantation apparatus according to aspect 26, wherein the trajectory calculation unit calculates a difference between the central trajectories of the desired ions and the modified ions in a deflection direction by the first beam deflector at the position of the first separation opening.

[0313] (Aspect 28) The ion implantation apparatus according to any one of Aspects 18 to 20, further comprising a beam size adjustment unit that adjusts the size of the first ion beam in a direction of deflection by the first beam deflector at the position of the first separation opening.

[0314] (Aspect 29) The ion implantation apparatus according to aspect 28, wherein the beam size adjuster adjusts an extraction electric field distribution in the vicinity of a first opening through which the first ion beam is extracted from the ion source.

[0315] (Aspect 30) The ion implantation apparatus according to Aspect 28, further comprising a first beam current measuring device that measures a size of the first ion beam in the deflection direction, wherein the beam size adjusting unit adjusts the size by referring to the size measured by the first beam current measuring device.

[0316] (Aspect 31) The ion implantation apparatus according to Aspect 29, wherein the extraction unit comprises, from downstream to upstream in the direction of travel of the first ion beam, a reference electrode having a second opening through which the first ion beam passes and to which a third reference potential is applied, and a first suppression electrode having a third opening through which the first ion beam passes and to which a first suppression potential lower than the third reference potential is applied, and the beam size adjustment unit adjusts a distance between the first opening in the ion source and the first suppression electrode.

[0317] (Aspect 32) The ion implantation apparatus according to Aspect 28, wherein the extraction unit comprises, from downstream to upstream in the traveling direction of the first ion beam, a reference electrode having a second opening through which the first ion beam passes and to which a third reference potential is applied, a first suppression electrode having a third opening through which the first ion beam passes and to which a first suppression potential lower than the third reference potential is applied, and a conductor having a fourth opening through which the first ion beam passes and a distance from the first opening through which the first ion beam is extracted from the ion source that is variable, and the beam size adjustment unit adjusts the distance between the first opening in the ion source and the conductor.

[0318] (Aspect 33) The ion implantation apparatus according to Aspect 28, wherein the extraction unit comprises, from downstream to upstream in the direction of travel of the first ion beam, a reference electrode having a second opening through which the first ion beam passes and to which a third reference potential is applied, a first suppression electrode having a third opening through which the first ion beam passes and to which a first suppression potential lower than the third reference potential is applied, and a conductor having a fourth opening through which the first ion beam passes and to which a control potential higher than the third reference potential is applied, and wherein the beam size adjustment unit adjusts the control potential.

[0319] (Aspect 34) The ion implantation apparatus according to Aspect 28, wherein a second suppression electrode is provided at at least one of an entrance and an exit of the first beam deflection device, the second suppression electrode having a fifth opening through which the first ion beam passes and a second suppression potential lower than the potential of the second region is applied, and the beam size adjustment unit adjusts the second suppression potential.

[0320] (Aspect 35) The ion implanter according to aspect 28, further comprising a second beam deflection device downstream of the first separation opening, the second beam deflection device applying an electric field or a magnetic field to the second ion beam.

[0321] (Aspect 36) The ion implantation apparatus according to aspect 35, wherein a direction of deflection of the second ion beam by the second beam deflection device intersects a traveling direction of the second ion beam and a direction of deflection of the first ion beam by the first beam deflection device.

[0322] (Aspect 37) The ion implantation apparatus according to aspect 35, wherein the second beam deflection device adjusts an electric field or a magnetic field applied to the second ion beam so that the desired ions pass through a predetermined trajectory.

[0323] (Aspect 38) The ion implantation apparatus according to aspect 35, wherein a second separation opening is provided downstream of the second beam deflection device, which separates and passes the desired ions and the modified ions in accordance with the electric field or the magnetic field, and a second beam current measurement device is provided downstream of the second separation opening, which measures the beam currents of the desired ions and the modified ions, respectively.

[0324] (Aspect 39) The ion implantation apparatus according to aspect 38, further comprising an ion irradiation prohibition unit that prohibits irradiation of the second ion beam onto the wafer when the ratio of the beam current of the desired ion and the modified ion measured by the second beam current measurement device is outside an allowable range.

[0325] (Aspect 40) The ion implantation apparatus according to aspect 38, wherein the beam size adjustment unit adjusts the size of the first ion beam at the position of the first separation opening when the ratio of the beam current of the desired ion and the modified ion measured by the second beam current measurement device is within a range requiring adjustment.

[0326] (Aspect 41) The ion implantation apparatus according to Aspect 38, wherein an electric field application device is provided between the first beam deflection device and the second beam deflection device, which applies an electric field to hinder the transport of the modified ions, and when the ratio of the beam currents of the desired ions and the modified ions measured by the second beam current measurement device is within a range requiring adjustment, the electric field application device adjusts the electric field it applies.

[0327] (Aspect 42) The ion implantation apparatus according to aspect 28, further comprising a phase space distribution measurement device downstream of the first separation opening for measuring a phase space distribution of the second ion beam.

[0328] (Aspect 43) The ion implantation apparatus according to Aspect 42, further comprising a beam size estimation unit that estimates the size of the first ion beam in the deflection direction at the position of the first separation aperture based on the phase space distribution of the second ion beam measured by the phase space distribution measurement device.

[0329] (Aspect 44) The ion implantation apparatus according to aspect 42, wherein the beam size adjuster adjusts the size of the first ion beam based on the phase space distribution of the second ion beam measured by the phase space distribution measurement device.

[0330] (Aspect 45) An ion extraction device comprising: an ion source that generates plasma containing desired ions; an extraction section that extracts a group of ions containing the desired ions from the ion source to generate a first ion beam; a first beam deflection device that deflects the first ion beam by applying a magnetic field; a first separation opening that allows the desired ions included in the first ion beam deflected by the first beam deflection device to pass; and a potential difference setting section that sets a potential difference between a first region that is at least a part of the area between an exit of the extraction section and an entrance of the first beam deflection device, and a second region that is at least a part of the area between the entrance and exit of the first beam deflection device, wherein the potential difference is set so that modified ions generated by at least one of decomposition and charge conversion of some of the group of ions in the first ion beam passing through the first region and the desired ions have mutually different central orbits in the second region, and at least some of the modified ions cannot pass through the first separation opening.

[0331] While the present disclosure has been described above with reference to the above-described embodiments, the present disclosure is not limited to the above-described embodiments, and the configurations of the embodiments may be appropriately combined or substituted. Furthermore, those skilled in the art may appropriately rearrange the combinations and processing orders in the embodiments, or may modify the embodiments by various design changes, etc., based on their knowledge. Such rearrangements and modifications may also be included within the scope of the ion implantation apparatus and ion extraction apparatus according to the present disclosure.

[0332] Embodiments of the present disclosure may take the form of a computer program comprising one or more computer-readable sequences describing the methods of the present disclosure, or a non-transitory tangible recording medium (e.g., non-volatile memory, magnetic tape, magnetic disk, or optical disk) on which such a computer program is stored, and a processor may execute such a computer program to implement the methods of the present disclosure.

[0333] The present disclosure relates to ion implanters and ion extractors.

[0334] 10 ion implantation device, 14 implantation processing chamber, 20 ion source, 20c front slit, 22 extraction section, 22a suppression electrode, 22b reference electrode, 22e movable conductor, 22f extension mechanism, 22g housing, 24 mass analysis section, 24a mass analysis magnet device, 24b mass analysis slit, 24e second suppression electrode, 24f second suppression electrode, 34 energy analysis section, 34c energy analysis slit, 38 beam stopper, 46 beam profiler, 100 angle measurement device, 200 angle measurement device, 300 angle measurement device, 401 ion source state acquisition section, 402 electrical information acquisition section, 403 potential difference setting section, 404 trajectory calculation section, 405 beam size adjustment section, 406 first beam current measurement device, 407 phase space distribution measurement device, 408 Beam size estimation unit, 409 aperture width adjustment unit, 410 second beam deflection device, 411 second beam current measurement device, 412 ion irradiation prohibition unit, OP1 first aperture, OP2 second aperture, OP3 third aperture, OP4 fourth aperture, OP5 fifth aperture, R1 first region, R2 second region.

Claims

1. An ion implantation apparatus comprising: an ion source that generates plasma containing desired ions; an extraction unit that extracts a group of ions containing the desired ions from a first opening in the ion source to generate an ion beam; and an implantation processing chamber that irradiates a wafer with the ion beam, wherein the extraction unit comprises, from downstream to upstream in the traveling direction of the ion beam: a reference electrode that has a second opening through which the ion beam passes and to which a reference potential is applied; a suppression electrode that has a third opening through which the ion beam passes and to which a suppression potential lower than the reference potential is applied; and a movable conductor that has a fourth opening through which the ion beam passes and whose distance from the first opening in the traveling direction is variable.

2. The ion implantation apparatus according to claim 1, wherein the first opening, the second opening, the third opening, and the fourth opening are slits elongated in the same direction.

3. The ion implantation apparatus according to claim 1 or 2, wherein the ion beam passes through the first opening, the fourth opening, the third opening, and the second opening in that order, and the distance between the first opening and the fourth opening is controlled so that the ion beam has a desired phase space distribution when irradiated onto the wafer.

4. The ion implantation apparatus according to claim 1 or 2, wherein an extraction potential higher than the reference potential is applied to the ion source, and a control potential between the extraction potential and the reference potential is applied to the movable conductor in order to control the phase space distribution of the ion beam emitted from the second aperture.

5. The ion implantation apparatus according to claim 1 or 2, wherein the distance between said suppression electrode and said reference electrode in said direction of travel is constant.

6. The ion implantation apparatus according to claim 1 or 2, wherein the distance between said movable conductor and said suppression electrode in said traveling direction is variable.

7. An ion implantation apparatus according to claim 1 or 2, wherein the distance between the first opening and the fourth opening in the traveling direction is controlled in accordance with the state of the ion source so that the ion beam has a desired phase space distribution when irradiated onto the wafer.

8. The ion implantation apparatus according to claim 1 or 2, further comprising a phase space distribution measuring device downstream of said reference electrode for measuring the phase space distribution of said ion beam.

9. An ion implantation apparatus according to claim 8, wherein at least one of the distance between the first aperture and the fourth aperture in the propagation direction and the control potential applied to the movable conductor is controlled in accordance with the phase space distribution of the ion beam measured by the phase space distribution measuring device.

10. The ion implantation apparatus according to claim 1 or 2, further comprising an ion source status acquisition unit that acquires an apparatus parameter that reflects the status of the ion source.

11. The ion implantation apparatus according to claim 10, wherein the apparatus parameters are at least one of the gas species, gas flow rate, vaporizer temperature, arc current, arc voltage, source magnet current, which are set as parameters of the ion source, an effective extraction current which is the total amount of charge carried per unit time by the group of ions including the desired ions extracted from the ion source, and a beam current of the ion beam irradiated onto the wafer.

12. The ion implantation device according to claim 10, wherein at least one of the distance between the first opening and the fourth opening in the traveling direction and the control potential applied to the movable conductor is controlled in accordance with the device parameters acquired by the ion source state acquisition unit.

13. The ion implantation device according to claim 1 or 2, further comprising an electrical information acquisition unit that acquires the potential difference between the extraction potential applied to the ion source and the control potential applied to the movable conductor, and an effective extraction current that is the total amount of charge carried per unit time by the group of ions including the desired ions extracted from the ion source.

14. An ion implantation device as described in claim 13, wherein at least one of the distance between the first opening and the fourth opening in the traveling direction and the control potential applied to the movable conductor is controlled according to the potential difference and the effective extraction current acquired by the electrical information acquisition unit.

15. The ion implanter of claim 1 or 2, wherein the same potential is applied to the ion source and the movable conductor.

16. The ion implanter according to claim 1 or 2, wherein the size of the fourth opening is larger than the size of the first opening.

17. An ion extraction device comprising: an ion source that generates plasma containing desired ions; and an extraction unit that extracts a group of ions containing the desired ions from a first opening in the ion source to generate an ion beam, wherein the extraction unit comprises, from downstream to upstream in the traveling direction of the ion beam: a reference electrode that has a second opening through which the ion beam passes and to which a reference potential is applied; a suppression electrode that has a third opening through which the ion beam passes and to which a suppression potential lower than the reference potential is applied; and a movable conductor that has a fourth opening through which the ion beam passes and whose distance from the first opening in the traveling direction is variable.

Images