Shielded multicomponent high-frequency package and manufacturing method thereof

Abstract

The present invention provides a package and a method thereof as well as a use of the package for a high-frequency application. The package (100) comprises a component carrier (102) comprising a stack (104) which comprises at least one electrically conductive layer structure (106) and at least one electrically insulating layer structure (108), a multi-component module (110) at least partially arranged on and / or in the stack (104), said multi-component module (110) comprising at least two active portions (112, 114), and an electrically conductive shielding structure (116) configured for at least partially shielding the at least two active portions (112, 114) from each other with respect to electromagnetic interference.

Description

[0001] SHIELDED MULTICOMPONENT HIGH-FREQUENCY PACKAGE AND MANUFACTURING METHOD THEREOF

[0002] The invention relates to a package, to a method of manufacturing a package, and to a use of a package for a high-frequency application.

[0003] In the context of growing product functionalities of component carriers equipped with one or more electronic components and increasing miniaturization of such electronic components as well as a rising number of electronic components to be mounted on the component carriers such as printed circuit boards, increasingly more powerful array-like components or packages having several electronic components are being employed, which have a plurality of contacts or connections, with ever smaller spacing between these contacts. Removal of heat generated by such electronic components and the component carrier itself during operation becomes an increasing issue. At the same time, component carriers shall be mechanically robust and electrically reliable so as to be operable even under harsh conditions.

[0004] It is an object of the invention to provide an electrically reliable component carrier-type package.

[0005] In order to achieve the object defined above, a package, a method of manufacturing a package, and a use of a package according to embodiments of the invention are provided.

[0006] According to an exemplary embodiment, a package is provided which comprises a component carrier comprising a stack which comprises at least one electrically conductive layer structure and at least one electrically insulating layer structure, a multi-component module at least partially arranged on and / or in the stack, said multi-component module comprising at least two active portions, and an electrically conductive shielding structure configured for at least partially shielding the at least two active portions from each other with respect to electromagnetic interference.

[0007] According to another exemplary embodiment of the invention, a method of manufacturing a package is provided, wherein the method comprises providing a component carrier comprising a stack which comprises at least one electrically conductive layer structure and at least one electrically insulating layer structure, arranging a multi-component module at least partially on and / or in the stack, said multi-component module comprising at least two active portions, and forming an electrically conductive shielding structure configured for at least partially shielding the at least two active portions from each other with respect to electromagnetic interference.

[0008] According to still another exemplary embodiment of the invention, a package having the above-mentioned features is used for a high-frequency application, for example for processing a high frequency signal, in particular a high frequency signal with a frequency of at least 1 GHz, preferably in a range from 1 GHz to 50 GHz.

[0009] In the context of the present application, the term "package" may particularly denote a device providing an electronic functionality and being composed of a plurality of electrically, mechanically and / or thermally interconnected electronic constituents, such as a component carrier and electronic components or active portions, etc. A package can provide routing layers to fan out or fan in an electrical connection from the components with input and / or output for other element connections. Additionally, a packag may provide a protection carrier for protecting and / or mounting and / or sealing the components (such as an IC). The package may comprise a 2D, 2.5D, or 3D type of packages for different final applications. The package may also comprise one or more embedded components in a wafer or PCB or mounted on the surface of a PCB.

[0010] In the context of the present application, the term "component carrier" may particularly denote any support structure which is capable of accommodating one or more components thereon and / or therein for providing mechanical support and / or electrical connectivity and / or thermal conductivity. In other words, a component carrier may be configured as a mechanical and / or electronic and / or thermal carrier for components. In particular, a component carrier may be one of a printed circuit board, an organic interposer, and an IC (integrated circuit) substrate. For example, a component carrier may be a rigid-flex carrier, or a flexible substrate. A component carrier may also be a hybrid board combining different ones of the above-mentioned types of component carriers. In particular, a component carrier may comprise a stack comprising a plurality of electrically conductive layer structures and / or electrically insulating layer structures.

[0011] In the context of the present application, the term "stack" may particularly denote a flat or planar sheet-like body. For instance, the stack may be a layer stack, in particular a laminated layer stack or a laminate. Such a laminate may be formed by connecting a plurality of layer structures, which preferably may be arranged in a parallel manner, by the application of mechanical pressure and / or heat.

[0012] In the context of the present application, the term "layer structure" may particularly denote a continuous layer, a patterned layer or a plurality of non- consecutive islands within a common plane.

[0013] In the context of the present application, the term "multi-component module" may particularly denote a single integral physical body with at least two components and / or active portions and / or other constituents. A multicomponent module may have at least two distinguishable active portions. In particular, a multi-component module may be handled as a single piece during a manufacturing process. For example, a multi-component module may comprise two or more separate components (such as semiconductor chips) in an adhesive matrix, may comprise two or more directly connected components (such as semiconductor chips glued together), or two or more integrally connected component sections (such as one semiconductor chip with two or more functionally and / or spatially separated active portions).

[0014] In the context of the present application, the term "active portion" may particularly denote a functional region of a multi-component module which provides a function, in particular an electronic function. For instance, when the multi-component module comprises a semiconductor chip, an active portion may be a region of said semiconductor chip in which at least one integrated circuit element (such as a transistor or a diode) is monolithically integrated. It is possible that a multi-component module comprises a single semiconductor chip having different active portions, or that a multi-component module comprises a plurality of semiconductor chips each having at least one active portion.

[0015] In the context of the present application, the term "electrically conductive shielding structure" may particularly denote a physical structure compris- ing an electrically conductive material (such as a metal, for example copper) and being located and configured so as to be capable of suppressing electromagnetic interference which may otherwise result in cross talk between different active portions of the multi-component module.

[0016] In the context of the present application, the term "electromagnetic interference" may particularly denote a disturbance generated by one of the active portions and / or an external source that affects another one of the active portions by electromagnetic induction, electrostatic or electromagnetic coupling, and / or conduction. The disturbance may degrade the performance of at least one of the active portions or may even stop it from functioning. When radiofrequency is involved, electromagnetic interference may also include radiofrequency interference (RFI) when in the radio frequency spectrum.

[0017] In the context of the present application, the term "cross talk" may refer to a phenomenon of electromagnetic interference caused by the electric or magnetic fields of a signal affecting another signal in an adjacent circuit. Essentially, an electrical signal may have a varying electromagnetic field. Whenever electromagnetic fields overlap, unwanted signals - capacitive, conductive and / or inductive coupling - may cause electromagnetic interference (EMI) that can create crosstalk. Overlap can occur with structured cabling, integrated circuit design, audio electronics and other connectivity systems. For example, if there are two wires in close proximity that are carrying different signals, their currents may create magnetic fields that induce a weaker signal in the neighboring wire, therefore the cross talk may occur in the multicomponent module which may comprise adjacent or parallel pairs of wires creating magnetic fields that interact and disrupt one another. Crosstalk is a big concern for electrical product development because of the demand for electronic systems to increase in bandwidth and decrease in size. This puts high-speed circuitry and high-bandwidth channels in proximity. Additionally, the continuous increase in internal clock frequencies (for example 5 to 10 GHz) and the increase in data rates (for example above 10 Gbps) are also fueling the emergence of crosstalk issues. Therefore, an effective electrically conductive shielding structure plays a vital role on the electrical component package, in particular on the electrical component package for HF (high- frequency references application. In the context of the present application, the term "high-frequency application" may particularly denote an electronic function related to a task which may involve the processing and / or communication of a high-frequency or radio frequency signal. Such a radio or high-frequency signal may be an electric or electromagnetic signal propagating along the package in a range of frequencies used for communications or other signals. In particular, a radio frequency (RF) signal may for example have a frequency in the range between 3 kHz and 300 GHz, in particular in a range from 1 GHz to 150 GHz. For providing a high frequency application, the multi-component module may be equipped with at least one high-frequency component or active portion which may have integrated functionality in terms of high-frequency signal generation and / or high-frequency signal processing and / or high-frequency signal transmission. For example, a high-frequency component may be a semiconductor chip or an active portion (such as an RFIC, radiofrequency integrated circuit) configured for operating with high-frequency signals. For instance, the high- frequency component or active portion may provide front end functionality for carrying out front end processing tasks of a high frequency application, in particular a communications application. Additionally or alternatively, it is possible that a high-frequency component or active portion functions for impedance matching to ensure a matching of impedances of a front end and of a coupling element. Additionally or alternatively, other functions of a high- frequency component or active portion are possible.

[0018] In the context of the present application, the term "main surface" of a body may particularly denote one of two largest opposing surfaces of the body or outermost opposing surfaces of the body. The main surfaces may be connected by circumferential side walls. The thickness of a body, such as the component carrier or the multi-component module, may be defined by the distance between the two opposing main surfaces.

[0019] According to an exemplary embodiment, a package is based on a component carrier (such as a printed circuit board or an integrated circuit substrate) having a (preferably laminated) layer stack. A multi-component module assembled with the stack may have multiple active portions which may be active for providing a functionality (such as an electronic functionality). However, since a multi-component module may be handled as a single piece during manufacture of the package, the manufacturing process may be significantly simplified and conventional issues such as undesired individual components tilting and / or shifting may be overcome. This may increase yield, may improve quality and may shorten the manufacturing process. Advantageously, an electrically conductive shielding structure of the package may shield the active portions with respect to each other for inhibiting, reducing or even eliminating cross talk created by electromagnetic interference (EMI) in between. As a result, operation of the, for instance spatially relatively close, active portions of the multi-component module may be executed with high quality, low loss and low distortion thanks to the suppression of EMI phenomena. Consequently, an electrically reliable component carrier-type package may be provided. What is more, such kind of shielding structure may provide a flexibility of design for an integrated circuit (IC) package which may encounter the cross talk issue for the components embedded in the package and / or mounted on the package. This is due to the fact that this may make it possible to design or manufacture the shielding structure during assembly with low effort instead of changing the design of the components or chips or resolve it at wafer level which may involve much more effort to take.

[0020] In the following, further exemplary embodiments of the package, the use and the method will be explained.

[0021] In an embodiment, at least part of the shielding structure is arranged between the at least two active portions. This may efficiently suppress crosstalk by shielding an electromagnetic field between the two (for instance adjacent) active portions. Therefore, the noise of signal transmission can be prominently reduced and the signal integrity can be ensured, beside it, the signal correctness can be guaranteed.

[0022] In an embodiment, at least part of the shielding structure is arranged on the multi-component module. When being arranged directly on the multicomponent module, the shielding structure may fulfil its shielding function in close spatial vicinity to the active portions, and therefore highly efficiently. Additionally, such structure may provide a big tolerance for design of the shielding structure with the multi-component module. In an embodiment, the multi-component module comprises at least two separate components, wherein in particular each the at least two separate components is associated with a respective one of said at least two active portions. For instance, the separate components may be individual components (such as semiconductor chips) which may be connected with each other, preferably directly with each other (for instance by gluing), for forming a common single body multi-component module. This may lead to a compact design.

[0023] In an embodiment, the multi-component module comprises a common inorganic structure for the at least two active portions, in particular a semiconductor body in which the at least two active portions are integrated. For example, the active portions may be monolithically integrated in different surface portions of a common inorganic structure, preferably a common semiconductor substrate. Said surface portions may be located on the same main surface adjacent to each other. Thus, the multi-component module can be manufactured with low space consumption since its active portions may be different regions of the same common inorganic structure.

[0024] In the context of the present application, the term "inorganic structure" may particularly denote a body which comprises inorganic material, such as an inorganic compound. In particular, dielectric material of the inorganic structure or even the entire inorganic structure may be made exclusively or at least substantially exclusively from inorganic material. In another embodiment, the inorganic structure may comprise inorganic dielectric material and additionally another dielectric material. An inorganic compound may be a chemical com pound that lacks carbon-hydrogen bonds or a chemical compound that is not an organic compound. In an example, the inorganic structure may comprise glass, for example silicon base glass, in particular soda lime glass, and / or boro-silicate glass and / or alumo-silicate glass and / or lithium silicate glass and / or alkaline free glass. In another example, the inorganic structure may comprise ceramic material, for example aluminum nitride and / or aluminum oxide and / or silicon nitride and / or boron nitride and / or tungsten comprising ceramic material. Yet, in another example, the inorganic structure may comprise semi-conducting material, for example silicon and / or germanium and / or silicon oxide and / or germanium oxide and / or silicon carbide and / or gallium nitride. In a further embodiment, the inorganic structure may comprise (elemental) metal and / or metal alloys, for example, copper and / or tin and / or bronze. Yet in another embodiment, the inorganic structure may comprise inorganic material, which is not listed in the above mentioned example, such as: M0S2, CuGaC , AgAIC , LiGaTez, AglnSez, CuFeSz, BeO.

[0025] In an embodiment, the multi-component module is configured as a block structure, in particular as an organic board structure. For example, the block structure may be a printed circuit board or an integrated circuit substrate. Two or more components, each comprising at least one active portion, may be embedded in the block structure. The block structure may then be embedded in the component carrier, to thereby form a board-in-board arrangement with a cross talk suppressing shielding structure.

[0026] In an embodiment, at least part of the (in particular electrically conductive) shielding structure is arranged in and / or on the block structure. Thus, the shielding structure may be partially or entirely embedded in the block structure as well. Also this may contribute to a compact design of the package and to a highly efficient shielding.

[0027] In an embodiment, the multi-component module comprises a cluster comprising a plurality of components, for example a plurality of components embedded in the cluster. For instance, the multi-component module may be embodied as a set of chiplets combined to a cluster. Chiplets integrated in the cluster may be used for high performance computing, and then the cross talk issue can be also get resolved for the high performance computing application. This may bring the advantage of simplifying the manufacturing process of the package and thus enhances the manufacturing speed.

[0028] In an embodiment, the multi-component module comprises an encap- sulant, for example an encapsulant comprising an organic material. When the encapsulant is an organic material, the multi-component module may for instance be formed as a laminate encapsulating components with active portions in the organic material, such as an epoxy resin and / or prepreg. In another embodiment, the encapsulant may be a mold compound. This may bring the advantage of using all the PCB and / or IC substrate related manufacturing processes and / or machines and may therefore ensure high quality products and / or low scrap. In an embodiment, the stack comprises a cavity at least part of which accommodating at least part of the multi-component module. For instance, at least part of the multi-component module may be embedded in the stack, in particular is embedded in the at least one electrically insulating layer structure. The mentioned cavity may particularly denote an accommodation hole, an opening or a via in the component carrier. Such a cavity may be a through hole extending through a core in a central portion of the component carrier, may be a blind hole extending into the component carrier but having a closed bottom, or may be a groove or recess of any shape. When the multicomponent module is embedded in an interior of the stack of the component carrier, this may lead to a highly compact design of the package, in particular in a vertical direction.

[0029] However, in an alternative embodiment, the multi-component module may be surface mounted on top of the stack. The shielding structure may then be arranged on top of the surface mounted multi-component module and / or between the surface mounted multi-component module and the stack.

[0030] In an embodiment, at least part of the shielding structure is embedded in the stack, in particular is embedded in the at least one electrically insulating layer structure. This may in particular allow to manufacture at least part of the shielding structure together with at least part of the at least one electrically conductive layer structure. For instance, at least part of the shielding structure and at least part of the at least one electrically conductive layer structure may be formed by commonly patterned metal layers and / or by commonly drilled and metal filled holes. This may render the manufacturing process very efficient.

[0031] In an embodiment, at least part of the multi-component module is electrically coupled with the at least one electrically conductive layer structure. For instance when the multi-component module is embedded in the stack, said electric coupling may allow to connect one or more terminals of the embedded multi-component module with an exterior surface of the package. This may allow, in turn, to electrically couple the embedded multi-component module with an electronic periphery of the package, with a surface mounted component on the stack, etc. For example, it can be coupled with the first build up or the second build-up of the component carrier. This may depend on the design and application. Therefore, the shielding structure can be formed in the stack of the component carrier and can make use of the manufacturing process of the component carrier with the package and / or the multi-component module manufacturing process. This may make the manufacturing effort lower and / or efficiency better.

[0032] In an embodiment, the shielding structure is electrically decoupled from the multi-component module (for example shorted in that area). This may allow for example to bring the shielding structure to an electric reference potential, for instance to ground potential, for providing a particularly efficient EMI protection.

[0033] In an embodiment, the shielding structure is electrically coupled with and / or aligned with at least one conductive area of the multi-component module. For example, the at least one conductive area may comprise multiple sub-areas, for example arranged between the at least two active portions, preferably electrically decoupled from the at least two active portions. An alignment of the shielding structure, in particular between the at least two active portions, may further enhance EMI protection and may therefore ensure low interference between the plurality of components.

[0034] In an embodiment, the shielding structure comprises a shielding wall. Preferably, said shielding wall may be a continuous wall, more preferably a continuous electrically conductive wall. For example, such a shielding wall may have a vertical orientation. This may allow to electromagnetically decouple active portions of the multi-component module from each other in a reliable way. A configuration of the shielding structure with one or more metallic shielding walls may be of utmost advantage for an efficient suppression of cross talk.

[0035] In an embodiment, the shielding structure comprises a plurality of shielding vias. In this context, a via may be a frustoconical or cylindrical hole filled partially or entirely with a metal such as copper. Such vias may be mechanically drilled (which may lead to a cylindrical hole) or may be laser drilled (which may lead to a frustoconical hole). Such holes may be filled with a metal, for instance by electroless plating and / or electroplating. When being arranged between the active portions to be shielded with respect to each other, and preferably when coupling such vias with an electric reference potential such as ground, their EMI shielding function may be particularly pronounced.

[0036] In an embodiment, the shielding vias are electrically coupled with each other, for example by an electrically conductive connection bar. Such a metallic bar or stripe may extend horizontally, preferably straight, and may efficiently electrically connect an array of shielding vias for bringing all these shielding vias simultaneously to a common electric potential.

[0037] In an embodiment, the shielding vias have a height lower than a distance between respectively neighboured shielding vias, wherein the height and / or the distance is for example less than 50 pm, in particular is in a range from 5 pm to 40 pm. This may lead to good cross talk reduction results for many relevant frequencies and package designs. When the shielding vias are sufficiently close together, this may lead to an efficient shielding without the risk of excessive electromagnetic radiation propagating between adjacent vias. Appropriate heights and / or distances of the shielding vias may also be adjusted in accordance with an operation frequency of the package.

[0038] In an embodiment, the shielding structure comprises a plurality of shielding vias which have a characteristic maximum mutual distance value, L, being defined as the square root of the square of a height of the shielding vias plus a square of a distance between respectively neighboured shielding vias. In such an embodiment, the method may comprise determining the characteristic maximum mutual distance value, L, for a wavelength, A, of a high frequency signal propagating in the package to comply with a predefined target value of a shielding effectiveness, SE, based on the formula: SE=20*lg(A / 2L). In certain designs, the shielding vias may have a characteristic maximum mutual distance value, being defined as the square root of the square of a height of the shielding vias plus a square of a distance between respectively neighboured shielding vias, in a range from 80 pm to 8000 pm for a frequency of a high frequency signal propagating in the package in a range from 1 GHz to 100 GHz. Such design rule can be flexibly adjusted based on the final application due to the requirement of frequency.

[0039] In an embodiment, the shielding vias have dimensions and / or mutual distances from each other being different from dimensions and / or mutual distances of vias of the at least one electrically conductive layer structure, for example on and / or in the same electrically insulating layer structure. For example, the shielding vias may be specifically arranged, shaped and dimensioned for optimizing their EMI shielding function. Correspondingly and independently, connection vias of the electrically conductive layer structures may be specifically arranged, shaped and dimensioned for optimizing their electric connection function in the component carrier. This separate optimization may lead to different dimensions and / or mutual distances of shielding vias as compared with connection vias.

[0040] In an embodiment, the shielding structure circumferentially surrounds at least one of the at least two active portions, in particular each of the at least two active portions (see for example Figure 8). Such a configuration may provide a shielding function for an active portion around its entire perimeter. Thus, this may lead to excellent results in terms of EMI protection.

[0041] In an embodiment, the shielding structure and / or the at least one electrically conductive layer structure is configured for electrically coupling the shielding structure to a reference potential, for example to a ground potential. When bringing the metallic shielding structure to ground potential or another well-defined constant electric potential, the EMI protection may be particularly strong. The shielding structure can be also configured for functioning in terms of heat dissipation. It can at least partially dissipate heat from one or more of the components.

[0042] In an embodiment, the component carrier comprises an inorganic core such as glass. The multi-component module may be embedded in the inorganic core. In such an embodiment, the shielding structure can be designed as any of the shielding structures mentioned in this application. Since the component may be also inorganic, there may be much less CTE mismatch, therefore the risk of warpage and crack, delamination, etc. may be significantly reduced.

[0043] In an embodiment, the component carrier comprises a stack of at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier may be a laminate of the mentioned electrically insulating layer structure(s) and electrically conductive layer structure(s), in particular formed by applying mechanical pressure and / or thermal energy. The mentioned stack may provide a plate-shaped component carrier capable of providing a large mounting surface for further components and being nevertheless very thin and compact.

[0044] In an embodiment, the component carrier is shaped as a plate. This contributes to the compact design, wherein the component carrier nevertheless provides a large basis for mounting components thereon. In particular a naked die as example for an electronic component can be surface mounted on a thin plate such as a printed circuit board.

[0045] In an embodiment, the component carrier is configured as one of the group consisting of a printed circuit board, a substrate (in particular an IC substrate), and an interposer.

[0046] In the context of the present application, the term "printed circuit board" (PCB) may particularly denote a plate-shaped component carrier which is formed by laminating several electrically conductive layer structures with several electrically insulating layer structures, for instance by applying pressure and / or by the supply of thermal energy. As preferred materials for PCB technology, the electrically conductive layer structures are made of copper, whereas the electrically insulating layer structures may comprise resin and / or glass fibers, so-called prepreg or FR.4 material. The various electrically conductive layer structures may be connected to one another in a desired way by forming holes through the laminate, for instance by laser drilling or mechanical drilling, and by partially or fully filling them with electrically conductive material (in particular copper), thereby forming vias or any other through-hole connections. The filled hole either connects the whole stack, (through-hole connections extending through several layers or the entire stack), or the filled hole connects at least two electrically conductive layers, called via. Similarly, optical interconnections can be formed through individual layers of the stack in order to receive an electro-optical circuit board (EOCB). A printed circuit board is usually configured for accommodating one or more components on one or both opposing surfaces of the plate-shaped printed circuit board. They may be connected to the respective main surface by soldering. A dielectric part of a PCB may be composed of resin with reinforcing fibers (such as glass fibers).

[0047] In an embodiment, the component carrier is an integrated circuit substrate. In the context of the present application, the term "integrated circuit substrate" (IC substrate) may particularly denote a component carrier having a size and a pitch adjusted to the requirements of an integrated circuit component (in particular a semiconductor chip) mounted thereon. An IC substrate may be a, in relation to a PCB, comparably small component carrier onto which one or more integrated circuit components may be mounted and that may act as a connection body between one or more chip(s) and a PCB or being plugged in a socket mounted on a PCB. For instance, an IC substrate may have substantially the same size as an electronic component to be mounted thereon (for instance in case of a Chip Scale Package (CSP)). In another embodiment, the IC substrate may be larger than the assigned component (for instance in a flip chip ball grid array, FCBGA, configuration). More specifically, an IC substrate can be understood as a carrier for electrical connections or electrical networks as well as component carrier comparable to a printed circuit board (PCB), however with a considerably higher density of laterally and / or vertically arranged connections. Lateral connections are for example conductive paths, whereas vertical connections may be for example drill holes. These lateral and / or vertical connections are arranged within the IC substrate and can be used to provide electrical, thermal and / or mechanical connections of housed components or unhoused components (such as bare dies), particularly of IC chips, with a printed circuit board or interposer. A dielectric part of an IC substrate may be composed of resin with reinforcing particles (such as reinforcing spheres, in particular glass spheres). A pitch, i.e. a distance between corresponding edges of two adjacent metal structures, of an IC substrate may be not more than 150 pm, in particular not more than 100 pm. In contrast to this, a pitch of some kind of PCBs may be at least 200 pm, in particular at least 300 pm.

[0048] The substrate or interposer may comprise or consist of at least a layer of glass, silicon (Si) and / or a photoimageable or dry-etchable organic material like epoxy-based build-up material (such as epoxy-based build-up film) or polymer compounds (which may or may not include photo- and / or thermosensitive molecules) like polyimide or polybenzoxazole.

[0049] In an embodiment, the at least one electrically insulating layer structure comprises at least one of the group consisting of a resin or a polymer, such as epoxy resin, cyanate ester resin, benzocyclobutene resin, Melamine derivates, Polybenzoxabenzole (PBO), bismaleimide-triazine resin, polyphenylene derivate (e.g. based on polyphenylenether, PPE), polyimide (PI), polyamide (PA), liquid crystal polymer (LCP), polytetrafluoroethylene (PTFE), Bisbenzocy- clobutene (BCB) and / or a combination thereof. Reinforcing layer structures such as webs, fibers, spheres or other kinds of filler particles, for example made of glass (multilayer glass) in order to form a composite, could be used as well. A semi-cured resin in combination with a reinforcing agent, e.g. fibers impregnated with the above-mentioned resins is called prepreg. These prepregs are often named after their properties e.g. FR4 or FR5, which describe their flame retardant properties. Although prepreg particularly FR4 are usually preferred for rigid PCBs, other materials, in particular epoxy-based build-up materials (such as build-up films) or photoimageable dielectric materials, may be used as well. For high frequency applications, high-frequency materials such as polytetrafluoroethylene, liquid crystal polymer and / or cyanate ester resins, may be preferred. Besides these polymers, low temperature cofired ceramics (LTCC) or other low, very low or ultra-low DK materials may be applied in the component carrier as electrically insulating structures.

[0050] In an embodiment, the at least one electrically conductive layer structure comprises at least one of the group consisting of copper, aluminum, nickel, silver, gold, palladium, tungsten, titanium and magnesium. Although copper is usually preferred, other materials or coated versions thereof are possible as well, in particular coated with supra-conductive material or conductive polymers, such as graphene or poly(3,4-ethylenedioxythiophene) (PEDOT), respectively.

[0051] The at least one component can be selected from a group consisting of an electrically non-conductive inlay, an electrically conductive inlay (such as a metal inlay, preferably comprising copper or aluminum), a heat transfer unit (for example a heat pipe), a light guiding element (for example an optical waveguide or a light conductor connection), an electronic component, or combinations thereof. An inlay can be for instance a metal block, with or without an insulating material coating (IMS-inlay), which could be surface mounted for the purpose of facilitating heat dissipation. Suitable materials are defined according to their thermal conductivity, which should be at least 2 W / mK. Such materials are often based, but not limited to metals, metal-oxides and / or ceramics as for instance copper, aluminium oxide (AI2O3) or aluminum nitride (AIN). In order to increase the heat exchange capacity, other geometries with increased surface area are frequently used as well. Furthermore, a component can be an active electronic component (having at least one p-n- junction implemented), a passive electronic component such as a resistor, an inductance, or capacitor, an electronic chip, a storage device (for instance a DRAM or another data memory), a filter, an integrated circuit (such as field- programmable gate array (FPGA), programmable array logic (PAL), generic array logic (GAL) and complex programmable logic devices (CPLDs)), a signal processing component, a power management component (such as a fieldeffect transistor (FET), metal-oxide-semiconductor field-effect transistor (MOSFET), complementary metal-oxide-semiconductor (CMOS), junction field-effect transistor (JFET), or insulated-gate field-effect transistor (IGFET), all based on semiconductor materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), gallium oxide (GazOs), indium gallium arsenide (InGaAs), indium phosphide (InP), and / or any other suitable inorganic compound), an optoelectronic interface element, a light emitting diode, a photocoupler, a voltage converter (for example a DC / DC converter or an AC / DC converter), a cryptographic component, a transmitter and / or receiver, an electromechanical transducer, a sensor, an actuator, a microelectromechanical system (MEMS), a microprocessor, a capacitor, a resistor, an inductance, a battery, a switch, a camera, an antenna, a logic chip, and an energy harvesting unit. However, other components may be surface mounted on the component carrier. For example, a magnetic element can be used as a component. Such a magnetic element may be a permanent magnetic element (such as a ferromagnetic element, an antiferromagnetic element, a multiferro- ic element or a ferrimagnetic element, for instance a ferrite core) or may be a paramagnetic element. However, the component may also be an IC substrate, an interposer or a further component carrier, for example in a board-in-board configuration. The component may be surface mounted on the component carrier. Moreover, also other components, in particular those which generate and emit electromagnetic radiation and / or are sensitive with regard to electromagnetic radiation propagating from an environment, may be used as component. In an embodiment, the component carrier is a laminate-type component carrier. In such an embodiment, the component carrier is a compound of multiple layer structures which are stacked and connected together by applying a pressing force and / or heat.

[0052] After processing interior layer structures of the component carrier, it is possible to cover (in particular by lamination) one or both opposing main surfaces of the processed layer structures symmetrically or asymmetrically with one or more further electrically insulating layer structures and / or electrically conductive layer structures. In other words, a build-up may be continued until a desired number of layers is obtained.

[0053] After having completed formation of a stack of electrically insulating layer structures and electrically conductive layer structures, it is possible to proceed with a surface treatment of the obtained layers structures or component carrier.

[0054] In particular, an electrically insulating solder resist may be applied to one or both opposing main surfaces of the layer stack or component carrier in terms of surface treatment. For instance, it is possible to form such a solder resist on an entire main surface and to subsequently pattern the layer of solder resist so as to expose one or more electrically conductive surface portions which shall be used for electrically coupling the component carrier to an electronic periphery. The surface portions of the component carrier remaining covered with solder resist may be efficiently protected against oxidation or corrosion, in particular surface portions containing copper.

[0055] It is also possible to apply a surface finish selectively to exposed electrically conductive surface portions of the component carrier in terms of surface treatment. Such a surface finish may be an electrically conductive cover material on exposed electrically conductive layer structures (such as pads, conductive tracks, etc., in particular comprising or consisting of copper) on a surface of a component carrier. If such exposed electrically conductive layer structures are left unprotected, then the exposed electrically conductive component carrier material (in particular copper) might oxidize, making the component carrier less reliable. A surface finish may then be formed for instance as an interface between a surface mounted component and the component carrier. The surface finish has the function to protect the exposed electrically conductive layer structures (in particular copper circuitry) and enable a joining process with one or more components, for instance by soldering. Examples for appropriate materials for a surface finish are Organic Solderability Preservative (OSP), Electroless Nickel Immersion Gold (ENIG), Electroless Nickel Immersion Palladium Immersion Gold (ENIPIG), gold (in particular hard gold), chemical tin, nickel-gold, nickel-palladium, etc.

[0056] The aspects defined above and further aspects of the invention are apparent from the examples of embodiment to be described hereinafter and are explained with reference to these examples of embodiment.

[0057] Figure 1 illustrates a cross-sectional view of a package according to an exemplary embodiment of the invention.

[0058] Figure 2 illustrates a plan view of part of the package according to Figure 1.

[0059] Figure 3 illustrates a plan view of a larger portion of the package according to Figure 1.

[0060] Figure 4 to Figure 7 illustrate side views of packages according to exemplary embodiments of the invention.

[0061] Figure 8 illustrates a plan view of a package according to an exemplary embodiment of the invention.

[0062] Figure 9 illustrates three-dimensional views of a package according to an exemplary embodiment of the invention.

[0063] Figure 10 to Figure 12 illustrate multi-component modules of packages according to exemplary embodiments of the invention.

[0064] The illustrations in the drawings are schematic. In different drawings, similar or identical elements are provided with the same reference signs.

[0065] When embedding components in a component carrier, there may be conventionally issues with cross talk between different adjacent components comprising very close wires from the respective component with each other. For example, embedded components may have respective wires adjacent closely to each other, in particular between different embedded high- frequency components. According to an exemplary embodiment, a package comprises a component carrier (for example a PCB) with a (for instance laminated) layer stack. The latter may be equipped with a multi-component module which has at least two separate active portions each configured for actively contributing to the functionality of the package during operation. Preferably, the multi-component module is a single body which can thus be handled easily during manufacture of the package. Beneficially, it may be possible to arrange in the package an electrically conductive shielding structure for at least partially mutually shielding the at least two active portions to suppress electromagnetic interference caused by an unintentional interaction between the different active portions. Consequently, it may be possible to operate the active portions of the multi-component module, even when being located in close spatial vicinity, in a low-loss high-quality fashion. In view of the EMI protection integrated in the package, a high electric reliability of the package may be ensured.

[0066] To put it shortly, an EMI shielding for a chip-embedded package may be provided in an exemplary embodiment. The provision of the shielding structure may reduce crosstalk in view of electromagnetic interference from one active portion (for instance conductor) to another active portion (for example conductor). For example, the electrically conductive shielding structure may be embodied as one or more metallic vias in a die-die-connection area such as the boundary area between two dies. For instance, the electrically conductive shielding structure may be formed based on a metallic pattern in a build-up layer (which may be for instance connected to a ground layer or to another dielectric reference potential). Advantageously, this may allow to generate an EMI shield which may resolve, in turn, cross talk issues. In particular, it may be possible to embody the electrically conductive shielding structure as an array of metallic vias, as a metal shield wall, as a metallic Faraday cage, etc. Alternatively, it may be possible that the electrically conductive shielding comprises non-metallic material, in particular having an electrical conductivity higher than 104S / m, for example graphite. Advantageously, any of said electrically conductive shielding structures may be connected to an electric reference potential such as ground, for obtaining a particularly powerful EMI protection. In particular, such an EMI shielding structure may provide EMI protection for a chip-embedded package for suppressing or even eliminating cross talk. More particularly, such an EMI shielding structure may be highly advantageous for a package configured for providing a high-frequency application.

[0067] In comparison with conventional approaches, exemplary embodiments of the invention making use of a single-body multi-component module may shorten an assembly time compared with a conventional die mounting cycle time. Furthermore, such an approach may lower the risk of die tilting and / or shift issues, which may be in particular pronounced when a die is very small. In particular, a package with multi-component module may be embedded in the stack to thereby obtain a multi-chip embedded package. Such kind of structure does not just improve the efficiency of component embedding by embedding multiple dies at one time, but may also improve the efficiency of component manufacturing and may increase the utilization of the layout of a wafer at wafer level by reducing the singulation frequency and by reducing the cutting area.

[0068] Advantages achievable by providing a package according to an exemplary embodiment of the invention is the suppression or elimination of cross talk between different active portions in a common package, a high efficiency of die bonding and low yield loss, and a reduction of the effort to reduce or eliminate cross talk.

[0069] Although many applications of such a package are possible, an exemplary application of exemplary embodiments of the invention relates to an automotive radar module. A further application of exemplary embodiments of the invention is a device operating in accordance with a 60 GHz wireless network protocol, also denoted as 60 GHz WiGig.

[0070] According to an exemplary embodiment of the invention, a package comprises a component carrier comprising a stack comprising at least one electrically conductive layer structure and at least electrically insulating layer structure, a cavity formed in the stack, a multi-component module provided in or on the stack, said multi-component module comprising at least two active portions, and a shielding conductive structure configured for at least partially sealing the at least two active portions from the respective electromagnetic interferences. For example, the shielding conductive structure is at least partially provided between the two active portions. Moreover, the shielding conductive structure may be provided on the multi-component module. For instance, said multi-component module comprises at least two components, each of said at least two components being associated to the respective one of said at least two active portions. For example, said multi-component module comprises one common inorganic base structure. In an embodiment, said multi-component module is configured as a block structure. For example, the shielding conductive structure is at least partially provided in the block structure (and / or on the block structure). For instance, said multi-component module comprises at least two components (separated one from the other). In particular, each one of the at least two active portions may be provided on a respective component, preferably on the same side. For example, said multi-component module comprises a cluster comprising a plurality of components, in particular a plurality of components embedded in the cluster. It may be possible to embed components having different heights in stacking direction within the cluster and / or the block. Alternatively, the heights of components embedded in the cluster may be similar, in particular equal. In an embodiment, said multicomponent module comprises an encapsulating shielding, preferably made of an organic material. For example, the stack comprises a cavity, and said multi-component module is at least partially embedded in the stack. For instance, the shielding conductive structure is at least partially embedded in the stack, in particular in one of electrically insulating structures of the stack. For example, the shielding conductive structure is arranged in the first electrically insulating layer structure in contact with the multi-component module. In particular, the multi-component module may be encapsulated by a material of at least one electrically insulating layer structure of the stack. In an embodiment, that material can be adapted as compensation portion in terms of the mentioned cavity-component, what concerns stack-component CTEs. In particular, the shielding conductive structure may be electrically connected with one electrically conductive structure of the stack. For example, the shielding structure is not directly in contact with a conductive area provided on the multi-component module. For instance, the multi-component module has at least one conductive area configured to connect and / or align with the shielding structure. In embodiments, said at least one conductive area comprises one or multiple sub-areas, preferably provided between the two active areas, more preferably not electrically connected to at least one of said at least two active areas. In particular, the shielding conductive structure may comprise a separating conductive wall. For example, the shielding conductive structure comprises a plurality of vias. For instance, the vias are connected one to each other. In an embodiment, the vias have a height lower (alternatively higher) than the distance between the respective neighbored vias. For example, height and / or distance may be less than 50 pm, in particular between 5 pm and 40 pm (alternatively, it may be in the range from 40 pm to 100 pm). In an embodiment, the via dimensions and / or distances of the shielding conductive structure are different for the via dimensions of the electrically conductive layer structure of the stack, in particular those on and / or in the same layer. For instance, the shielding conductive structure encircles at least one of the at least two active portions, in particular both or all. In an embodiment, the shielding conductive structure and the at least one electrically conductive layer structure of the stack are configured to connect the shielding conductive structure to the ground. Preferably, the shielding structure may be used for a package providing a radiofrequency or high- frequency application.

[0071] In an embodiment, the shielding conductive structure is at least partially embedded in the multi-component module at the level of a redistribution layer (RDL) of the component (in particular at least partially at the level of the RDL). This RDL may denote fan out wires (for instance in one or more chips) for connection with an integrated circuit element of the active portion (for example a transistor or diode).

[0072] In an embodiment, the shielding structure may be at least partially embedded in the multi-component module at the level of a transistor and / or a diode.

[0073] In an embodiment, the shielding structure may be unconnected with respect to the multi component module (for instance, the via at the arrow pointing to reference sign 126 in Figure 1 may be omitted). For example, the shielding structure may be connected to a ground potential by different routing. Additionally or alternatively, the shielding structure may be located in a different vertical level (preferably higher) than the conductive portions of the active portions. Without wishing to be bound to a specific theory, it is believed that it may make sense that the shielding wall is higher than the contacts in order to interfere better with the built up electric field.

[0074] Exemplary embodiments of the invention may solve cross talk issues by separating a conventional chip into different components or active portions of a multi-component module and providing an EMI protection between the active regions or between the components of the multi-component module. Such an approach may also lead to advantageous properties in terms of die bonding cycling time and the reliability of correctly locating and orienting an integral multi-component module in comparison with individual separated dies. In particular during encapsulation by resin or prepreg material, this may lead to good results. The mentioned EMI protection can for instance be provided by an electrically conductive shielding structure which may be embodied for example as a shield wall or a Faraday cage. For example, metallic vias on chip configured for EMI shielding may be a preferred configuration. Advantages of exemplary embodiments are particularly pronounced in high speed and / or high-frequency packages, where EMI phenomena may be particularly strong. Advantageous may be also an embedding of a multi-component module, such as a multi-chip module, in one common cavity without cross talk issues, which may also reduce package size. Furthermore, a high throughput and high yield of manufactured packages may allow to execute a manufacturing process of an exemplary embodiment of the invention on an industrial scale, since the risk of undesired chip tilt and / or chip drop-out may be reduced when handling a multi-component module in comparison with a conventional concept of embedding multiple chips individually.

[0075] Figure 1 illustrates a cross-sectional view of a package 100 according to an exemplary embodiment of the invention. Figure 2 illustrates a plan view of part of the package 100 according to Figure 1. Figure 3 illustrates a plan view of a larger portion of the package 100 according to Figure 1.

[0076] Package 100 is manufactured based on a component carrier 102. Component carrier 102 may be an integrated circuit (IC) substrate or a printed circuit board (PCB). The component carrier 102 may comprise a laminated layer stack 104 comprising electrically conductive layer structures 106 and electrically insulating layer structures 108. For example, the electrically conductive layer structures 106 may comprise patterned metal layers (such as patterned copper foils or patterned deposited and / or electrical plating copper layers) and vertical through connections, for example copper filled vias, which may be created by drilling and plating. The electrically insulating layer structures 108 may comprise a respective resin (such as a respective epoxy resin), preferably comprising reinforcing particles therein (for instance glass fibers or glass spheres, fillers, etc.). For example, the electrically insulating layer structures 108 may be made of prepreg or FR.4 or ABF or photo imageable dielectric material or other dielectric material. The electrically insulating layer structures 108 may also comprise resin layers being free of glass (in particular glass fibers).

[0077] Although not shown in Figure 1, the exterior electrically insulating layer structures 108 may be embodied as a patterned solder resist exposing selective portions of the uppermost and lowermost electrically conductive layer structures 106. On said exposed portions of the uppermost and lowermost electrically conductive layer structure 106, solder structures (not shown) may be formed. Solder structures, or other electrically conductive interconnection structures (such as a sinter or electrically adhesive glue or metal bonding structure) may allow to establish an electrically conductive connection of component carrier 102 with an electronic environment, for instance with at least one surface-mounted component and / or with another electronic board (not shown).

[0078] The stack 104 comprises a fully cured core 150 in a central portion of the package 100 as well as an upper multilayer build-up 152 formed on top of the core 150 and a lower multilayer build-up 154 formed under the core 150.

[0079] Furthermore, a cavity 122 may be formed in the stack 104, in particular in the core 150. For example, the cavity 122 may be a hole which extends through the entire core 150. The cavity 122 is delimited at its bottom side by lower multilayer build-up 154 and laterally by a circumferential sidewall of core 150.

[0080] Moreover, a multi-component module 110 is embedded in the cavity 122 of the stack 104. Said multi-component module 110 is embodied as a single integrated physical body which can be handled as a single piece during a manufacturing process and which comprises two functionally separate active portions 112, 114. According to Figure 1, the multi-component module 110 comprises a first electronic component 118 and a second electronic component 120. A sidewall of the first electronic component 118 is connected with a sidewall of the second electronic component 120, for instance by gluing or manufactured in one silicon substrate. For example, each of the first electronic component 118 and the second electronic components 120 is embodied as a semiconductor chip, for instance manufactured in silicon technology. The first electronic component 118 comprises the first active portion 112 in an upper surface portion of a semiconductor substrate. The first active portion 112 may comprise at least one monolithically integrated circuit element, such as a transistor and / or a diode. Correspondingly, the second electronic component 120 comprises the second active portion 114 in an upper surface portion of a semiconductor substrate. The second active portion 114 may comprise at least one monolithically integrated circuit element, such as a transistor and / or a diode. Consequently, the first electronic component 118 is associated with the first active portion 112, and the second electronic component 120 is associated with the second active portion 114.

[0081] More specifically, the multi-component module 110 is embedded in the stack 104 so as to be surrounded by electrically insulating layer structures 108. However, at an upper main surface, the multi-component module 110 comprises metallic terminals being electrically coupled with electrically conductive layer structures 106 of stack 104. More specifically, said metallic terminals on the top side of the multi-component module 110 may be coupled with an exterior of the package 100 by connection vias 128 of the electrically conductive layer structures 106. The connection vias 128 fulfilling an electric connection function may for instance be electrically insulated with respect to shielding vias 126 providing a shielding function, as explained below. Said terminals may provide an electric coupling of respective active portions 112, 114 of components 118, 120 of the multi-component module 110. Thus, the multicomponent module 110 may be electrically coupled with the electrically conductive layer structures 106. At an upper main surface of the package 100, exposed electrically conductive layer structures 106 are capable of transporting signals between the active portions 112, 114 of the multi-component module 110 and an electronic environment of the package 100 by the connection vias 128.

[0082] During operation of the package 100, a high-frequency application may be executed, for example for processing a high frequency signal in a frequency range from 1 GHz to 50 GHz. Such high-frequency signals may be processed by one or both of the first electronic component 118 and the second electronic component 120. This may cause the generation of high-frequency electromagnetic radiation in an environment of the electronic components 118, 120, and may therefore involve a risk of unintentional electromagnetic interference (EMI) between the electronic components 118, 120 and in particular between their active portions 112, 114. In order to suppress or even eliminate such undesired EMI phenomena, an electrically conductive shielding structure 116 is provided at the package 100 and is configured for shielding the active portions 112, 114 from each other with respect to cross talk caused by electromagnetic interference. As shown, the shielding structure 116 is arranged between the active portions 112, 114, more specifically at a lateral interface between the first electronic component 118 with its first active portion 112 and the second electronic component 120 with its second active portion 114. As shown as well in Figure 1, the shielding structure 116 may be arranged directly on top of the multi-component module 110. A part of the shielding structure 116 is embedded in electrically insulating layer structures 108 of the stack 104 so as to be in close spatial vicinity with the components 118, 120 of the embedded multicomponent module 110. In view of this spatial arrangement of the shielding structure 116, the suppression of undesired EMI phenomena by the shielding structure 116 may be particularly pronounced.

[0083] Now referring also to Figure 2 and Figure 3, the shielding structure 116 comprises a linear array of a plurality of metallic shielding vias 126. Preferably, the shielding structure 116 can be brought to a reference potential, for example to an electric ground potential. As shown in Figure 3, the array of shielding vias 126 extends on top of and along a connection area between the first electronic component 118 and the second electronic component 120.

[0084] Figure 2 illustrates schematically how an electromagnetic field 156 may develop in an environment of the first active portion 112 when the first electronic component 118 is operated in accordance with a high-frequency application. Correspondingly, Figure 2 illustrates schematically how an electromagnetic field 158 may develop in an environment of the second active portion 114 when the second electronic component 120 is operated in accordance with a high-frequency application. In the absence of the shielding structure 116, an interaction of the electromagnetic field 156 with the second active portion 114 and / or an interaction of the electromagnetic field 158 with the first active portion 112 may occur, which may involve unintentional electromagnetic interference (EMI) and may disturb operation of the package 100. However, the row of metallic shielding vias 126 at an interface between the electronic components 118, 120 may lead to a shielding of such an electromagnetic field 156, 158 and may therefore reduce or even eliminate EMI between different sections of the integrally formed multi-component module 110. The shielding structure 116 may be electrically decoupled from the multi-component module 110 so that the shielding structure 116 may be brought independently to a desired electric potential for providing an efficient EMI protection. Advantageously, cross talk issues from the electromagnetic interference may therefore be efficiently suppressed.

[0085] However, it may also be possible that the shielding structure 116 may be electrically coupled with and / or aligned with at least one conductive area of the multi-component module 110. For instance, said conductive area may comprise multiple sub-areas, for example arranged between the active portions 112, 114, preferably electrically decoupled from the active portions 112, 114.

[0086] Figure 4 to Figure 7 illustrate side views of packages 100 according to exemplary embodiments of the invention.

[0087] Referring to Figure 4, a side view of part of a package 100 corresponding to the architecture of Figure 1 to Figure 3 is shown. As illustrated, the shielding vias 126 of the shielding structure 116 may be electrically coupled with each other by an electrically conductive connection bar 140 on top of the shielding vias 126. For example, said electrically conductive connection bar 140 may be a metallic strip interconnecting plural shielding vias 126 arranged along a straight or linear path. For instance, the electrically conductive connection bar 140 may be embodied as a patterned section of a metal layer, for instance a section of a structured copper foil or plated copper pad. Alternatively, the electrically conductive connection bar 140 may comprise other metals, for example nickel, aluminium, titanium or chromium or tungsten, which may be formed by an electroless plating or sputtering and / or a galvanic plating process. By the electrically conductive connection bar 140, a target electric reference potential 138 (for example a ground potential) may be applied to all shielding vias 126 connected therewith. As a result, such design may be short at the target area to fulfil the function of shielding the cross talk issue. In the embodiment of Figure 4, frustoconical shielding vias 126 (which may be formed for example by laser drilling followed by plating) are directly connected to the upper side of the multi-component module 110. The embodiment of Figure 4 may be denoted as via on silicon shielding configuration.

[0088] Figure 4 shows a height H of a respective shielding via 126, a bottomsided distance D between adjacent shielding vias 126, and a characteristic distance L (which may also be denoted as aperture) between a bottom of one shielding via 126 and a top of an adjacent shielding via 126. Said characteristic distance L may be calculated basically as the square root of the sum of the square of the height H and the square of the distance D. Each of the height H and the distance D may be for example less than 50 pm, for instance in a range from 5 pm to 40 pm to enable highly efficient shielding. The parameters H, D, L may be design parameters for adjusting or fine-tuning the functionality of the shielding structure 116. Preferably, the characteristic maximum mutual distance value L of the shielding vias 116 (being defined as the square root of the square of height H of the shielding vias 126 plus the square of distance D between respectively neighboured shielding vias 126) may be in a range from 80 pm to 8000 pm for a frequency of a high frequency signal propagating in the package 100 in a range from 1 GHz to 100 GHz. Thus, a proper value of L may depend on the operation frequency. Advantageously, an appropriate characteristic maximum mutual distance value (or the longest dimension of the aperture), L, may be determined as a basis for a manufacturing method for a wavelength, A, of a high frequency signal propagating in the package 100 during operation to comply with a predefined target value of a shielding effectiveness, SE, based on the formula: SE=20*lg(A / 2L), wherein Ig may denote the logarithm logio. For example, a longest dimension of the shield aperture as indicated by characteristic distance L may be 45 pm. The calculation of the wavelength A of the high-frequency radiation may be carried out based on the well-known equation A=c / (f*sr'1), in which c is the speed of light, f is the frequency of the high-frequency radiation, and sris the dielectric constant in a medium.

[0089] The following Table 1 shows advantageous parameter values:

[0090] Table 1: Advantageous parameter values for adjusting shielding effectiveness are plotted in underlined letters

[0091] In a nutshell, the higher the frequency, the smaller aperture can meet a certain shield performance. The underlined values in Table 1 may lead to good EMI shield performance. A scenario smaller than an EMI aperture size of 128 pm may achieve a good shield performance. A particularly advantageous design is to shield using an EMI wall with no aperture. A further calculation result is that in particular high-frequency values below 50 GHz may provide safe and non-resonant results.

[0092] The embodiment of Figure 5 differs from the embodiment of Figure 4 in particular in that, according to Figure 5, planar pads 160 are arranged between the frustoconical shielding vias 126 and the upper side of the multicomponent module 110. Advantageously, the metallic planar pads 160 may additionally contribute to the shielding function. The embodiment of Figure 5 may be denoted as via on chip copper pad shielding configuration. The vias may be formed from the electrical insulating layer structure of the component carrier stack and drilled down to the chip pads which are aligned with the vias. This structure can be realized with the vias on the stack at the same time, so it may provide a high efficiency from manufacturing point of view.

[0093] The embodiment of Figure 6 differs from the embodiment of Figure 4 in particular in that, according to Figure 6, a continuous metal layer 162 (or a continuous metal strip) is arranged between the frustoconical shielding vias 126 and the upper side of the multi-component module 110. Advantageously, the horizontal continuous metal layer 162 (or a horizontal continuous metal strip) may additionally contribute to the shielding function. The embodiment of Figure 6 may be denoted as via on chip ground copper shielding configuration. With the continuous metal layer on the chip, the effort for alignment between the shielding vias, the structure of the chips inside and the continuous metal layer may be reduced from manufacturing point of view.

[0094] The embodiment of Figure 7 differs from the embodiment of Figure 6 in particular in that, according to Figure 7, the shielding structure 116 comprises a continuous metallic shielding wall 124 between a bottom-sided continuous metal layer 162 (or a continuous metal strip) and a top-sided electrically conductive connection bar 140. As in Figure 7, the continuous metal layer 162 is arranged on the upper side of the multi-component module 110. Moreover, a trench may be formed (for example by etching or by drilling) in the electrically insulating layer on the metal layer 162 at first, following with the filling of the trench by electroless plating or sputtering and / or galvanic plating. An excellent shielding performance may be achieved by a vertical continuous metallic shielding wall 124 at an interface between the first electronic component 118 and the second electronic component 120 of the multicomponent module 110. The embodiment of Figure 7 may be denoted as copper wall shielding configuration.

[0095] Figure 8 illustrates a plan view of a package 100 according to an exemplary embodiment of the invention.

[0096] The embodiment of Figure 8 differs from the embodiment of Figure 3 in particular in that, according to Figure 8, the shielding structure 116 circumferentially surrounds each of the active portions 112, 114. More specifically, the embodiment of Figure 8 comprises a circumferentially closed ring-like first array of shielding vias 126 surrounding the first electronic component 118 on a top side of the multi-component module 110. In addition, the embodiment of Figure 8 comprises a circumferentially closed ring-like second array of shielding vias 126 surrounding the second electronic component 120 on the top side of the multi-component module 110. Along the connection interface between the first electronic component 118 and the second electronic component 120, the ring-like arrays may share shielding vias 116 to improve the compactness.

[0097] As an alternative to the ring-like array of shielding vias 116, as shown in Figure 8, it may also be possible to provide a circumferentially closed ringlike continuous first shielding wall surrounding the first electronic component 118 on a top side of the multi-component module 110, and a circumferentially closed ring-like continuous second shielding wall surrounding the second electronic component 120 on a top side of the multi-component module 110 (not shown).

[0098] Figure 9 illustrates three-dimensional views of a package 100 according to an exemplary embodiment of the invention. A top image shows an overview, and a bottom image shows a detailed view.

[0099] According to Figure 9, a three-dimensional view of a configuration according to Figure 5 is shown. The electrically conductive connection bar 140 connecting the shielding vias 126 may form an EMI shield wall and may be connected to an electric reference potential, such as ground. Connection vias 128 on the left-hand side of the array of shielding vias 126 may correspond to the first electronic component 118, whereas connection vias 128 on the righthand side of the array of shielding vias 126 may correspond to the second electronic component 120. As indicated in Figure 9, the shielding vias 126 fulfilling an electromagnetic shielding function may have dimensions and / or mutual distances D from each other being different from dimensions and / or mutual distances d of vias 128 of the electrically conductive layer structures 106 fulfilling an electric connection function. Thus, dimension parameters may be used as design parameters for independently adjusting the shielding function of the shielding vias 126 and the electric connection function of the connection vias 128.

[0100] Alternatively, d and D may be the same. As shown, the shielding vias 126 and the connection vias 128 may be formed on (and / or in) the same electrically insulating layer structure(s) 108. Advantageously, the shielding vias 126 and the connection vias 128 may be formed in the same planes, for instance by patterning common metal layers and / or by executing a common laser drilling and plating process. This keeps the manufacturing effort particularly small.

[0101] Figure 10 to Figure 12 illustrate multi-component modules 110 of packages 100 according to other exemplary embodiments of the invention.

[0102] The embodiment of Figure 10 differs from the embodiment of Figure 1 in particular in that, according to Figure 10, the multi-component module 110 comprises a common inorganic structure 130 for both active portions 112, 114. The common inorganic structure 130 may be a semiconductor body, such as a silicon substrate, in which the active portions 112, 114 are monolithically integrated. In other words, a common semiconductor body may be used as a basis for forming the active portions 112, 114 in different surface portions of the semiconductor body. Thus, different integrated circuit elements may be formed in different surface portions of the semiconductor body for creating spatially separate active portions 112, 114 sharing a common integral semiconductor body.

[0103] For example, a shielding structure 116 may then be formed on the top side of the multi-component module 110 of Figure 10 between the active portions 112, 114 on the common inorganic structure 130. Alternatively, inorganic structure 130 may also comprise a ceramic, glass, etc.

[0104] The embodiment of Figure 11 differs from the embodiment of Figure 1 in particular in that, according to Figure 11, the multi-component module 110 is configured as a block structure 132 which may be an organic board structure. For example, the block structure 132 may be a printed circuit board or an integrated circuit substrate with embedded electronic components 118, 120. Such a block structure 132 may be embedded as a whole in a stack 104 of another component carrier 102, for instance in the way as shown in Figure 1. For example, the shielding structure 116 may be arranged in and / or on the block structure 132. In the illustrated embodiment, shielding structure 116 may be a metallic shielding wall 124 formed partially inside of the block structure 132 and partially outside of the block structure 132. However, also in such an embodiment, the shielding structure 116 may be formed by an array of shielding vias 126 (not shown). The multi-component module 110 may comprise an encapsulant 136 which may comprise an organic material such as epoxy resin, prepreg, etc. In addition, the block structure 132 may also comprise electrically conductive layer structures 166 enabling to electrically access the embedded electronic components 118, 120 at an exterior surface of the block structure 132.

[0105] The embodiment of Figure 12 differs from the embodiment of Figure 1 in particular in that, according to Figure 12, the multi-component module 110 comprises a cluster 134 comprising a plurality of components 118, 120 embedded in the cluster 134. For example, the multi-component module 110 may also be an array of chiplets in a common matrix.

[0106] It should be noted that the term "comprising" does not exclude other elements or steps and the "a" or "an" does not exclude a plurality. Also elements described in association with different embodiments may be combined.

[0107] It should also be noted that reference signs in the claims shall not be construed as limiting the scope of the claims.

[0108] Implementation of the invention is not limited to the preferred embodiments shown in the figures and described above. Instead, a multiplicity of variants is possible which use the solutions shown and the principle according to the invention even in the case of fundamentally different embodiments.

Claims

Claims:

1. A package (100), wherein the package (100) comprises: a component carrier (102) comprising a stack (104) which comprises at least one electrically conductive layer structure (106) and at least one electrically insulating layer structure (108); a multi-component module (110) at least partially arranged on and / or in the stack (104), said multi-component module (110) comprising at least two active portions (112, 114); and an electrically conductive shielding structure (116) configured for at least partially shielding the at least two active portions (112, 114) from each other with respect to electromagnetic interference.

2. The package (100) according to claim 1, wherein at least part of the shielding structure (116) is arranged between the at least two active portions (112, 114).

3. The package (100) according to claim 1 or 2, wherein at least part of the shielding structure (116) is arranged on the multi-component module (HO).

4. The package (100) according to any of claims 1 to 3, wherein the multicomponent module (110) comprises at least two separate components (118, 120), wherein in particular each the at least two separate components (118, 120) is associated with a respective one of said at least two active portions (112, 114).

5. The package (100) according to any of claims 1 to 4, wherein the multicomponent module (110) comprises a common inorganic structure (130) for the at least two active portions (112, 114), in particular a semiconductor body in which the at least two active portions (112, 114) are integrated.

6. The package (100) according to any of claims 1 to 5, wherein the multicomponent module (110) is configured as a block structure (132), in particular as an organic board structure.

7. The package (100) according to claim 6, wherein at least part of the shielding structure (116) is arranged in and / or on the block structure (132).

8. The package (100) according to any of claims 1 to 7, wherein the multicomponent module (110) comprises a cluster (134) comprising a plurality of components (118, 120), for example a plurality of components (118, 120) embedded in the cluster (134).

9. The package (100) according to any of claims 1 to 8, wherein the multicomponent module (110) comprises an encapsulant (136), for example an encapsulant (136) comprising an organic material.

10. The package (100) according to any of claims 1 to 9, wherein the stack (104) comprises a cavity (122) at least part of which accommodating at least part of the multi-component module (110).

11. The package (100) according to any of claims 1 to 10, wherein at least part of the multi-component module (110) is embedded in the stack (104), in particular is embedded in the at least one electrically insulating layer structure (108).

12. The package (100) according to any of claims 1 to 11, wherein at least part of the shielding structure (116) is embedded in the stack (104), in particular is embedded in the at least one electrically insulating layer structure (108).

13. The package (100) according to any of claims 1 to 12, wherein at least part of the multi-component module (110) is electrically coupled with the at least one electrically conductive layer structure (106).

14. The package (100) according to any of claims 1 to 13, wherein the shielding structure (116) is electrically decoupled from the multi-component module (110).

15. The package (100) according to any of claims 1 to 14, wherein the shielding structure (116) is electrically coupled with and / or aligned with at least one conductive area of the multi-component module (110).

16. The package (100) according to claim 15, wherein the at least one conductive area comprises multiple sub-areas, for example arranged between the at least two active portions (112, 114), preferably electrically decoupled from the at least two active portions (112, 114).

17. The package (100) according to any of claims 1 to 16, wherein the shielding structure (116) comprises a shielding wall (124).

18. The package (100) according to any of claims 1 to 17, wherein the shielding structure (116) comprises a plurality of shielding vias (126).

19. The package (100) according to claim 18, wherein the package (100) comprises at least one of the following features: the shielding vias (126) are electrically coupled with each other, for example by an electrically conductive connection bar (140); the shielding vias (126) have a height (H) lower than a distance (D) between respectively neighboured shielding vias (126), wherein the height (H) and / or the distance (D) is for example less than 50 pm, in particular is in a range from 5 pm to 40 pm; the shielding vias (126) have a characteristic maximum mutual distance value (L), being defined as the square root of the square of a height (H) of the shielding vias (126) plus a square of a distance (D) between respectively neighboured shielding vias (126), in a range from 80 pm to 8000 pm for a frequency of a high frequency signal propagating in the package (100) in a range from 1 GHz to 100 GHz;the shielding vias (126) have dimensions and / or mutual distances (D) from each other being different from dimensions and / or mutual distances (d) of connection vias (128) of the at least one electrically conductive layer structure (106), for example on and / or in the same electrically insulating layer structure (108).

20. The package (100) according to any of claims 1 to 19, wherein the shielding structure (116) circumferentially surrounds at least one of the at least two active portions (112, 114), in particular each of the at least two active portions (112, 114).

21. The package (100) according to any of claims 1 to 20, wherein the shielding structure (116) and / or the at least one electrically conductive layer structure (106) is configured for electrically coupling the shielding structure (116) to a reference potential (138), for example to a ground potential.

22. Use of a package (100) according to any of claims 1 to 21 for a high- frequency application, for example for processing a high frequency signal, in particular a high frequency signal with a frequency of at least 1 GHz, preferably in a range from 1 GHz to 50 GHz.

23. A method of manufacturing a package (100), wherein the method comprises: providing a component carrier (102) comprising a stack (104) which comprises at least one electrically conductive layer structure (106) and at least one electrically insulating layer structure (108); arranging a multi-component module (110) at least partially on and / or in the stack (104), said multi-component module (110) comprising at least two active portions (112, 114); and forming an electrically conductive shielding structure (116) configured for at least partially shielding the at least two active portions (112, 114) from each other with respect to electromagnetic interference.

24. The method of claim 23, wherein the shielding structure (116) comprises a plurality of shielding vias (126) which have a characteristic maximum mutual distance value, L, being defined as the square root of the square of a height (H) of the shielding vias (126) plus a square of a distance (D) between respectively neighboured shielding vias (126); wherein the method comprises determining the characteristic maximum mutual distance value, L, for a wavelength, A, of a high frequency signal propagating in the package (100) to comply with a predefined target value of a shielding effectiveness, SE, based on the formula: SE = 20*lg(A / 2L).

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