Substrate processing device, substrate processing method, method for fabricating semiconductor device, and program

Abstract

Provided is a technology capable of suppressing the adhesion of foreign matter onto a substrate.　The technology includes: a processing vessel internally including a first space and a second space located above the first space; a table unit on which a substrate is to be placed; a drive unit that drives the table unit; a first supply system that controls the supply of a first gas into the processing vessel; a second supply system that controls the supply of a second gas having a different molecular structure from the first gas into the processing vessel; and a control unit configured to be capable of controlling the drive unit, the first supply system, and the second supply system such that (a) a process for supplying the first gas to the substrate in the first space, (b) a process for placing the substrate in the second space, and (c) a process for supplying the second gas to the substrate in the second space are performed in order.

Description

Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method and program

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, a method for manufacturing a semiconductor device, and a program.

[0002] As one step in a substrate processing process (a process for manufacturing a semiconductor device), a gas that assists in substrate processing by modifying the substrate surface and a gas that performs substrate processing such as film formation on the substrate surface may be supplied to the substrate (see, for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2022-148256

[0004] The present disclosure provides a technique capable of suppressing adhesion of foreign matter to a substrate.

[0005] According to one aspect of the present disclosure, there is provided a technology including: a processing vessel including a first space and a second space located above the first space; a mounting part on which a substrate is placed; a drive part that drives the mounting part; a first supply system that controls the supply of a first gas into the processing vessel; a second supply system that controls the supply of a second gas, the second gas having a molecular structure different from that of the first gas, into the processing vessel; and a control part configured to be able to control the drive part, the first supply system, and the second supply system so that the following processes are performed in that order: (a) a process of supplying the first gas to the substrate in the first space; (b) a process of arranging the substrate in the second space; and (c) a process of supplying the second gas to the substrate in the second space.

[0006] According to the present disclosure, it is possible to suppress adhesion of foreign matter to a substrate.

[0007] Fig. 1 is a schematic cross-sectional view of a processing vessel of a substrate processing apparatus according to an embodiment, showing a case where a wafer is set to a first position. Fig. 2 is a schematic cross-sectional view of a processing vessel of a substrate processing apparatus according to an embodiment, showing a case where a wafer is set to a second position. Fig. 3 is a diagram showing a schematic configuration example of a gas supply unit according to an embodiment. Fig. 4 is a block diagram of a controller and its periphery according to an embodiment. Fig. 5 is an overall flow diagram of substrate processing according to an embodiment. Fig. 6 is a cross-sectional view of a processing vessel of a substrate processing apparatus according to another aspect.

[0008] Hereinafter, one embodiment of the present disclosure will be described mainly with reference to FIGS. 1 to 6. It should be noted that all drawings used in the following description are schematic, and the dimensional relationships and ratios of elements shown in the drawings do not necessarily correspond to the actual ones. Furthermore, the dimensional relationships and ratios of elements between multiple drawings do not necessarily correspond to the actual ones. Furthermore, elements that are substantially the same as those described in FIG. 1 are denoted by the same reference numerals, and their description will be omitted. Furthermore, unless otherwise specified in the specification, each element is not limited to one, and multiple elements may be present.

[0009] (1) Substrate Processing Apparatus As shown in FIG. 1, the substrate processing apparatus 100 includes a processing vessel 201. The processing vessel 201 is made of a metal material such as aluminum (Al) or stainless steel (SUS). The processing vessel 201, which serves as a processing chamber, includes a first space 301 in which a wafer 1 serving as a substrate is processed with a first gas, and a second space 302 in which the wafer 1 is processed with a second gas. The second space 302 is formed above the first space 301. A partition 202 is provided between the first space 301 and the second space 302. The processing vessel 201 includes an upper vessel 201a and a lower vessel 201b. Both the first space 301 and the second space 302 are provided within the lower vessel 201b.

[0010] A first gas supply hole (first supply unit) 203 and a substrate loading / unloading port 500 adjacent to a gate valve 501 are provided on the side surface of the first space 301 of the lower vessel 201b. The wafer 1 moves between the first space 301 and a transfer chamber (not shown) through the substrate loading / unloading port 500. That is, the first space 301 also serves as a transfer space in which the wafer 1 is transferred between the inside and outside of the processing vessel 201.

[0011] A substrate support part 232 that supports the wafer 1 is disposed in the processing vessel 201. The substrate support part 232 mainly includes a substrate mounting table 206 and a heater 207 as a heat source provided within the substrate mounting table 206. The temperature of the heater 207 is controlled by a heater control part 208 that is a temperature adjustment part.

[0012] The substrate mounting table 206 is supported by a shaft 205. The shaft 205 penetrates the bottom of the processing vessel 201 and is connected to a lifting mechanism 204 outside the processing vessel 201. The lifting mechanism 204, which serves as a drive unit, mainly includes a support shaft that supports the shaft 205 and an operating unit that raises and lowers and rotates the support shaft. The operating unit includes, for example, a lifting mechanism including a motor for achieving the lifting and lowering, and a rotation mechanism such as a gear for rotating the support shaft. By operating the lifting mechanism 204 to raise and lower the shaft 205 and the substrate mounting table 206, the substrate mounting table 206 can raise and lower the wafer 1 mounted on its upper surface (substrate mounting surface).

[0013] 1, when transferring a wafer 1, the substrate mounting table 206 is lowered to a first position where the substrate mounting surface faces the substrate loading / unloading port 500. Then, at the first position, the wafer 1 is processed with a first gas. Note that at the first position, the first space 301 and the second space 302 are not separated. Then, when processing the wafer 1 with a second gas, as shown in FIG. 2, the wafer 1 is raised to a second position, which is a processing position within the second space 302. At the second position, the upper surface of the substrate mounting table 206 may abut against the partition 202, separating the first space 301 and the second space 302.

[0014] Above the second space 302, i.e., in the upper vessel 201a, a second gas supply hole (second supply unit) 209 is provided. From the second supply unit 209, the second gas and a purge gas, which is a third gas, are supplied simultaneously or at different times.

[0015] The shower head 210, which communicates with the second supply unit 209 of the upper chamber 201a, includes, for example, a disk-shaped dispersion plate. This dispersion plate is provided with a plurality of through-holes (second gas supply holes). The dispersion plate is disposed facing the substrate mounting surface, and the through-holes are provided across the entire surface of the dispersion plate. A buffer space 303 for diffusing the gas is provided between the dispersion plate and the second supply unit 209. The gas supplied into the shower head 210 accumulates in the buffer space 303 and is then supplied into the second space 302 via the second supply unit 209 (through-holes provided in the dispersion plate). The shower head 210 may be considered as part of the second supply unit 209.

[0016] (2) Gas Supply System Next, a gas supply system that supplies various gases to the processing vessel 201 will be described with reference to FIGS.

[0017] The first gas and the second gas have different molecular structures. In the following description, one or both of the first source gas and the second source gas may be referred to as the second gas. In the following description, the third gas is an inert gas, and will be described as being used to purge the processing vessel 201, for example.

[0018] The first gas supply pipe 211 is provided with, in order from the upstream side, a first gas supply source 214, a mass flow controller (MFC) 213 serving as a flow rate control unit, and a valve 212. The first gas supply pipe 211 is connected to a first supply unit 203 downstream of the valve 212. A first supply system 215 is mainly configured by the first gas supply pipe 211, the MFC 213, the valve 212, and the first supply unit 203. The first gas supply source 214 may be included in the first supply system 215. The first supply system 215 controls the supply of the first gas into the processing vessel 201 via the first supply unit 203.

[0019] The first raw material gas supply pipe 216a is provided with, in order from the upstream side, a first raw material gas supply source 219a, an MFC 218a, and a valve 217a. The first raw material gas supply pipe 216a is connected to the second supply unit 209 downstream of the valve 217a. A first raw material gas supply system is mainly configured by the first raw material gas supply pipe 216a, the MFC 218a, the valve 217a, and the second supply unit 209. The first raw material gas supply source 219a may be included in the first raw material gas supply system.

[0020] The second raw material gas supply pipe 216b is provided with, in order from the upstream side, a second raw material gas supply source 219b, an MFC 218b, and a valve 217b. The second raw material gas supply pipe 216b is connected to the second supply unit 209 downstream of the valve 217b. A second raw material gas supply system is mainly configured by the second raw material gas supply pipe 216b, the MFC 218b, the valve 217b, and the second supply unit 209. The second raw material gas supply source 219b may be included in the second raw material gas supply system.

[0021] In the following description, one or both of the first source gas supply system and the second source gas supply system may be referred to as a second supply system 220. The second supply system 220 controls the supply of the second gas into the processing vessel 201 via the second supply unit 209.

[0022] The third gas supply pipe 221 is provided with, in this order from the upstream side, a third gas supply source 224, a mass flow controller (MFC) 223 serving as a flow rate control unit, and a valve 222. The third gas supply pipe 221 is connected to the second supply unit 209 downstream of the valve 222. A third supply system 225 is mainly configured by the third gas supply pipe 221, the MFC 223, the valve 222, and the second supply unit 209. The third gas supply source 224 may be included in the third supply system 225. The third supply system 225 controls the supply of the third gas into the processing vessel 201 via the second supply unit 209.

[0023] Here, an inert gas supply system having a configuration similar to that of the third supply system 225 may be connected to the first gas supply unit 203 so that the inert gas can be supplied from the first gas supply unit 203 into the first space 301 .

[0024] (3) Exhaust System The lower chamber 201b of the processing chamber 201 is provided with an exhaust port 226a, which is a first exhaust port, and an exhaust port 226b, which is a second exhaust port. The exhaust port 226a is provided on a side of the first space 301, and the exhaust port 226b is provided on a side of the second space 302. Exhaust pipes connected to the exhaust port 226a and the exhaust port 226b are provided with valves 227a and 227b, respectively, and merge into an exhaust pipe 228 downstream of the respective valves. At least one of the valves 227a and 227b may be a valve with an adjustable aperture. The magnitude relationship between the gas conductance downstream of the exhaust port 226a and the gas conductance downstream of the exhaust port 226b may be controlled by adjusting the aperture of these valves.

[0025] Furthermore, the exhaust pipe 228 is provided with an APC (Auto Pressure Controller) 229 that controls the pressure inside the processing vessel 201 to a predetermined level, and a pressure monitor 230. The APC 229 has a valve element (not shown) with an adjustable opening, and adjusts the conductance of the exhaust pipe 228 in response to instructions from the controller 400. The exhaust pipe 228, the pressure monitor 230, the valves 227 a and 227 b, and the APC 229 constitute an exhaust system. A vacuum pump 231 may also be included in the exhaust system.

[0026] (4) Controller Fig. 3 shows a block diagram of a control unit included in the substrate processing apparatus 100. The controller 400 is configured as a computer including a CPU (Central Processing Unit) 400a, a RAM (Random Access Memory) 400b, a storage device 400c, and an I / O port 400d. The RAM 400b, the storage device 400c, and the I / O port 400d are configured to be able to communicate with the CPU 400a via an internal bus 400e. An input / output device 401 configured as, for example, a touch panel, and an external storage device 402 are connected to the controller 400.

[0027] The storage device 400c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), etc. The storage device 400c readably stores a control program for controlling the operation of the substrate processing apparatus, a process recipe describing the procedures and conditions for substrate processing (described later), and other information. The recipe is a combination of procedures in a substrate processing method (described later) that are executed by the controller 400 to obtain a predetermined result. It is a higher-level language than the control program. The control program and the recipe are collectively referred to as a program. The storage device 400c also sequentially stores log information recording the operation and status of the apparatus. The RAM 400b is configured as a memory area (work area) for temporarily storing programs, data, etc. read by the CPU 400a. The provision of programs and data to the computer and the provision of programs and data from the computer to external devices may be performed using communication means such as the Internet or a dedicated line, without using an external storage device.

[0028] The I / O port 400d is connected to each component of the substrate processing apparatus, such as the gate valve 501, the lifting mechanism 204, the APC 229, the pressure monitor unit 230, the vacuum pump 231, the MFCs 213, 218a, 218b, and 223, the valves 212, 217a, 217b, 222, 227a, and 227b, and the heater control unit 208.

[0029] The CPU 400a is configured to read and execute a control program from the storage device 400c, and also to read a wafer recipe from the storage device 400c in response to input of an operation command from the input / output device 401. The CPU 400a is configured to be able to control the opening and closing operation of the gate valve 501, the lifting and lowering operation of the lifting mechanism 204, the opening and closing operation of the APC 229, the pressure detection operation by the pressure monitor unit 230, the on / off control of the vacuum pump 231, the flow rate adjustment operation of the MFCs 213, 218a, 218b, and 223, the opening and closing operation of the valves 212, 217a, 217b, 222, 227a, and 227b, the temperature control of the heater 207 by the heater control unit 208, and the like, in accordance with the contents of the read recipe.

[0030] (5) Substrate Processing Method An example of a substrate processing method for forming a film on a wafer 1 as a manufacturing process for a semiconductor device using the substrate processing apparatus 100 will be described with reference to Fig. 5. In the following description, the operation of each component of the substrate processing apparatus is controlled by a controller 400.

[0031] The term "wafer" used in this specification may refer to the wafer itself or to a laminate of the wafer and a predetermined layer or film formed on its surface. The term "surface of a wafer" used in this specification may refer to the surface of the wafer itself or to the surface of a predetermined layer or the like formed on the wafer. In this specification, for example, when it is stated that "a desired film is formed on a wafer" or "a film is formed on a wafer," it may mean that a predetermined film is formed directly on the surface of the wafer itself or that a predetermined film is formed on a layer or the like formed on the wafer. In this specification, the term "substrate" is also synonymous with the term "wafer."

[0032] In this specification, the term "supply amount" refers to the flow rate of the gas supplied, the term "pressure" refers to the pressure within the reaction chamber, and the term "process temperature" refers to the temperature of the wafer or the temperature of the process vessel 201.

[0033] 1, the substrate mounting table 206 is lowered to the first position, and the gate valve 501 is opened. Then, a transfer mechanism (not shown) places the wafer 1 on the substrate mounting table 206 in the first space 301 through the substrate loading / unloading port 500.

[0034] After the wafer 1 is placed on the substrate mounting table 206, power is supplied to a heater 207 provided inside the substrate mounting table 206 to heat the wafer 1. At this time, the output of the heater 207 is controlled based on temperature information of the wafer 1 detected by a temperature sensor (not shown), thereby adjusting the temperature of the wafer 1.

[0035] (First gas supply step: S2) A first gas is supplied from the first supply system 215 to the wafer 1 in the first space 301 via the MFC 213, the valve 212, and the first supply unit 203. At this time, the exhaust system is controlled so that the gas inside the processing vessel 201 is exhausted mainly via the exhaust port 226a. After a predetermined time has elapsed since the start of the supply of the first gas, the valve 212 is closed, thereby completing step S2. Note that the supply of the first gas to the surface of the wafer 1 in the first gas supply step may be performed multiple times.

[0036] The above-described process is carried out under the following conditions: first gas supply rate: 5 to 1000 sccm, pressure: 133 to 13332 Pa, and process temperature: 50 to 600°C.

[0037] In this specification, when a numerical range such as "5 to 1000 sccm" is expressed, it means that the lower limit and the upper limit are included in the range. Therefore, for example, "5 to 1000 sccm" means "5 sccm or more and 1000 sccm or less." The same applies to other numerical ranges.

[0038] At this time, the inert gas may be supplied into the second space 302 using the third supply system 225. In this case, a flow of the inert gas can be formed from the second space 302 toward the first space 301. This makes it possible to suppress the inflow of the first gas into the second space 302 and the adhesion of foreign matter caused by the first gas to the inner wall of the lower container 201b.

[0039] The first gas is, for example, an adsorption inhibitor gas that inhibits the adsorption of the second gas onto the wafer 1. The first gas forms an inhibitor layer that inhibits film formation on at least a portion of the surface of the wafer 1. The first gas is selected depending on the film to be formed in the film formation process described below. For example, titanium tetrachloride (TiCl ４ When a fluorine-containing halide gas is used, the first gas may be, for example, a fluorine-containing halide gas, such as tungsten hexafluoride (WF ６ ) gas, etc. can be used.

[0040] The inert gas is, for example, N ２Gases such as helium (He) gas, neon (Ne) gas, and argon (Ar) gas are used.

[0041] For example, the suppression layer may be preferentially formed on the opening side of the recess formed on the wafer 1 compared to the deeper side of the recess. This allows the film formation to be suppressed on the opening side of the recess and promoted on the deeper side of the recess during the film formation process. Also, a film that fills at least a portion of the recess (gap fill) can be formed.

[0042] Furthermore, for example, the suppression layer may be formed preferentially on the surface of a predetermined material formed on the wafer 1, rather than on other surfaces. In such a case, the film can be formed on the other surfaces preferentially over the predetermined surface.

[0043] In step S2, an inhibition layer may be formed on at least a part of the surface of an object (e.g., the inner wall of the lower vessel 201b, the lower surface of the substrate mounting table 206, the shaft 205, etc.) in the first space 301, in addition to the surface of the wafer 1. This makes it possible to inhibit a reaction caused by the second gas on the surface of the object in the first space 301 when the second gas used for film formation in the second space 302, which will be described later, flows into the first space 301.

[0044] In step S2, it is preferable that the gas inside the processing vessel 201 is mainly exhausted through the exhaust port 226a. For example, it is preferable that the valve 227a is opened and the valve 227b is closed so that the gas is not exhausted from the exhaust port 226b. Alternatively, it is preferable that the gas conductance downstream of the exhaust port 226a is greater than that downstream of the exhaust port 226b. In these cases, the first gas supplied into the first space 301 is less likely to flow into the second space 302, thereby suppressing the adhesion of foreign matter caused by the first gas to the inner wall of the lower vessel 201b.

[0045] At this time, it is preferable that the controller 400 controls the exhaust system and various gas supply systems so that the pressure in the second space 302 is higher than the pressure in the first space 301. This makes it difficult for the first gas to flow into the second space 302, thereby further suppressing adhesion of foreign matter caused by the first gas to the inner wall of the lower vessel 201b.

[0046] Here, consider a case where the temperature of the wafer 1 in step S2 is lower than the temperature of the wafer 1 in step S4, which will be described later. When the wafer 1 is at a low temperature, the gas used is more likely to adhere to the surface of the wafer 1, thereby enhancing the effect of the adsorption inhibitor gas. However, in step S4, the temperature inside the second space 302 is more likely to be higher than in step S2, so the first gas adsorbed to the object in the second space 302 is more likely to desorb. Therefore, foreign matter caused by the first gas is more likely to be generated. In the technology disclosed herein, the first gas and the second gas are supplied to the wafer 1 in the first space 301 and the second space 302, respectively, so even in such a case, the intrusion of foreign matter into the wafer 1 can be effectively suppressed.

[0047] After the supply of the first gas in step S2 is completed, an inert gas may be supplied into the processing vessel 201 using the third supply system 225 and exhausted from one or both of the exhaust ports 226 a and 226 b. This purges the processing vessel 201, thereby suppressing the first gas remaining in the processing vessel 201 and foreign matter caused by the first gas from moving into or remaining in the second space 302.

[0048] After the supply of the first gas in step S2 is completed, an inert gas may be supplied from the first gas supply unit 203 into the first space 301 and exhausted from one or both of the exhaust ports 226 a and 226 b. This purges the first space 301, making it difficult for the first gas remaining in the processing vessel 201 to move to the second space 302.

[0049] (Wafer Moving Process: S3) The lifting mechanism 204 moves the wafer 1 to the second space 302 by raising the substrate mounting table 206. At this time, it is preferable to open the valves 227a and 227b to evacuate the processing vessel 201. This makes it possible to suppress the first gas remaining in the processing vessel 201 and the migration and retention of foreign matter caused by the first gas into the second space 302. Note that at this time, it is preferable to supply an inert gas from the first supply unit 203 into the processing vessel 201. This makes it difficult for the first gas remaining in the processing vessel 201 to migrate to the second space 302.

[0050] Here, the partition 202 is configured to overlap the substrate mounting table 206 when viewed from the direction in which the substrate mounting table 206 moves. Therefore, the substrate mounting table 206 rises to a position (the position shown in FIG. 2 ) where a portion of the substrate mounting table 206 overlaps with the partition 202 provided in the lower vessel 201 b. This prevents the first gas remaining in the first space 301 and foreign matter caused by the first gas from flowing into the second space 302.

[0051] (Film Forming Process: S4) Next, Step S41 to S44 are sequentially performed to perform Step 4 as a film forming process (second gas supply process, second gas processing process).

[0052] In step 4, the exhaust system is controlled so that the gas in the processing vessel 201 is exhausted mainly through the exhaust port 226b. For example, it is preferable to open the valve 227b and close the valve 227a. Alternatively, it is preferable to increase the gas conductance downstream of the exhaust port 226b compared to the gas conductance downstream of the exhaust port 226a. In this case, the second gas supplied into the second space 302 is less likely to flow into the first space 301, thereby suppressing film formation in the first space 301.

[0053] In step S4, an inert gas may be supplied from the first gas supply unit 203 into the first space 301. This creates a flow of the inert gas from the first space 301 toward the second space 302, thereby suppressing the inflow of the second gas from the second space 302 into the first space 301.

[0054] (First source gas supply step: S41) The first source gas is supplied to the wafer 1 through the first source gas supply pipe 216a. At this time, the first source gas is selectively adsorbed to the portion of the wafer 1 other than the suppression layer formed by the first gas on the surface of the wafer 1. At this time, an inert gas may be supplied from the third supply system 225. After a predetermined time has elapsed since the start of the supply of the second gas, the valve 217a is closed, thereby completing step S41. For example, titanium tetrachloride (TiCl ４ ) gas can be used.

[0055] (Purge Gas Supply Step: S42) After step S41 is completed, exhaust is performed with the valve 227b or both the valves 227a and 227b open, and an inert gas is supplied from the third supply system 225 to purge the processing vessel 201. This removes the remaining first source gas and foreign matter resulting from the first source gas from the second space 302.

[0056] (Second source gas supply step: S43) Next, the second source gas is supplied to the wafer 1 through the second source gas supply pipe 216b. At this time, the first source gas adsorbed on the wafer 1 reacts with the second source gas to form a desired film. Simultaneously with this gas, an inert gas may be supplied from the third supply system 225. After a predetermined time has elapsed since the start of the supply of the second gas, the valve 217b is closed, thereby completing step S43. For example, ammonia (NH ３ In this case, the first source gas may be TiCl ４ If it is a gas, a TiN film is formed.

[0057] (Purge Gas Supply Step: S44) After step S43 is completed, exhaust is performed with the valve 227b or both the valves 227a and 227b open, and an inert gas is supplied from the third supply system 225 to purge the inside of the processing vessel 201. This removes unreacted gas and reaction by-products from the second space 302.

[0058] (Performed a Predetermined Number of Times: S45) A cycle including steps S41, S42, S43, and S44 is performed a predetermined number of times (n times, n is an integer of 1 or more) to form a film with a desired thickness.

[0059] In step S4, as described above, a portion of the substrate mounting table 206 overlaps with the partition 202, so the second space 302 is isolated from the first space 301 for the first gas supply step. This prevents the remaining first gas and foreign matter resulting from the first gas from adhering to the film surface and the inner wall of the lower vessel 201b in the second space 302 during film formation in the second space 302. Furthermore, because the first space 301 is isolated, the first gas remaining in the first space 301 and foreign matter resulting from the remaining first gas can be efficiently exhausted.

[0060] The above-described film forming process is carried out under the conditions of, for example, a supply rate of 100 to 1000 sccm for both the first source gas and the second source gas, a pressure of 1333 to 13332 Pa, and a processing temperature of 50 to 600°C.

[0061] After step S4, the second space 302 is evacuated with the valve 227b or both the valves 227a and 227b open to remove unreacted gas and reaction by-products remaining in the processing vessel 201. Furthermore, the valve 222 is opened to supply an inert gas into the processing vessel 201. Note that purging may be performed simultaneously with or after step S5, which will be described later.

[0062] (Wafer Moving Step: S5) The lifting mechanism 204 lowers the substrate mounting table 206 to move the wafer 1 into the first space 301.

[0063] (Wafer Unloading: S6) The gate valve 501 is opened. Then, a transfer mechanism (not shown) unloads the wafer 1 to the outside of the processing chamber 201 through the substrate loading / unloading port 500.

[0064] According to this embodiment, in addition to the above-mentioned effects, one or more of the following effects can be obtained.

[0065] When the surface of the wafer 1 is modified using the first gas and then the wafer 1 is processed using the second gas in the same processing vessel 201, the first gas may adhere to objects in the processing vessel 201 (e.g., the inside of the supply unit, the inner wall of the processing vessel 201, the underside of the substrate mounting table 206, etc.). Then, when the second gas is supplied to the wafer 1, components derived from the first gas may be contained in a film. Furthermore, the action of the first gas may peel off a film formed on the surface of an object in the processing vessel 201, and the peeled film may adhere to the surface of the wafer 1. In other words, the generation of these foreign matters may reduce the yield of substrate processing.

[0066] A first gas is supplied to the wafer in the first space 301, and then a second gas is supplied to the wafer in the upper second space 302. This makes it possible to prevent the first gas from adhering to the surfaces of objects in the second space 302. Therefore, it is possible to prevent the first gas and foreign matter caused by the first gas from adhering to the wafer 1.

[0067] The partition 202 restricts gas flow between the first space 301 and the second space 302. The first gas in the first space 301 is less likely to flow into the second space 302. Therefore, the residual first gas and foreign matter caused by the first gas are less likely to adhere to the inner wall of the lower vessel 201b of the second space 302 and the wafer 1 during the film formation process.

[0068] In addition, the second space 302 is located above the first space 301. This makes it possible to suppress an increase in the area (footprint) occupied by the substrate processing apparatus 100 in the horizontal direction, even when the spaces in which steps S2 and S4 are performed are separated.

[0069] In the above embodiment, the first gas is WF ６ Although the use of gases has been described, the present disclosure is not limited to such cases. ３ ) gas, nitrogen trifluoride (NF ３ ) gas, hydrogen fluoride (HF) gas, fluorine (F ２ The present invention is similarly applicable to the case where other gases such as HCl, HCl, HClO ...

[0070] Similarly, in the above-described embodiment, TiCl is used as the first source gas in the second gas supply step. ４ Although the case where a gas is used has been described, the present disclosure is not limited to such a case. ４ ), aluminum tetrachloride (AlCl ４ ), zirconium tetrachloride (ZrCl ４ ), hafnium tetrachloride (HfCl ４ ), tantalum pentachloride (TaCl ５ ), tungsten pentachloride (WCl ５ ), molybdenum pentachloride (MoCl ５ ), tungsten hexachloride (WCl ６ The present invention is similarly applicable to the case where other gases such as HCl, HCl, HClO ...

[0071] Similarly, in the above-described embodiment, NH is used as the second source gas in the second gas supply step. ３ Although the case where a gas is used has been described, the present disclosure is not limited to such a case. ２ H ４ ), water (H ２ O), oxygen (O ２ ), hydrogen (H ２ ) and O ２ The present invention is similarly applicable to the case where a gas that reacts with the first source gas, such as a mixed gas of the above, is used.

[0072] (Modification) A substrate processing apparatus according to a modification will be described with reference to Fig. 6. The substrate processing apparatus according to the modification is provided with a plasma generating unit that activates the second gas (one or both of the first source gas and the second source gas) in the second space 302 by a potential difference with the substrate mounting table 206. Other configurations of the substrate processing apparatus according to the modification are the same as those of the substrate processing apparatus according to the embodiment.

[0073] An activation unit 600, which is a plasma generation unit capable of supplying electromagnetic waves (high frequency power or microwaves), is provided in the upper chamber 201a. A matching unit 602 and a high frequency power supply 603 are connected to an electrode 604. The electrode 604 is configured so as to generate capacitively coupled plasma. A bias electrode 605 in the substrate mounting table 206 is connected to a bias adjustment unit 606, which makes it possible to adjust the bias. An impedance meter 601 may be provided between the electrode 604 of the activation unit 600 and the high frequency power supply 603.

[0074] Furthermore, the high frequency power supply 603, the matching box 602, and the impedance meter 601 can transmit and receive data to and from the controller 400. The controller 400 is set to be able to control the high frequency power supply 603 and the matching box 602 based on the values ​​measured by the impedance meter 601.

[0075] This modification also provides the same effects as the above-described embodiment. Furthermore, this modification further decomposes the source gas into a plasma state, activates it, and then reacts with it, thereby enabling uniform film formation with good coverage over the detailed structure of the surface of the wafer 1. Additionally, since the processing temperature can be set low, the influence of the processing temperature on the surface of the wafer 1 can be suppressed.

[0076] In such a case, because a voltage is applied between the upper chamber 201a and the substrate mounting table 206, it is preferable that the substrate mounting table 206 not come into contact with any object other than the shaft 205 (e.g., the partition 202, etc.). Therefore, in step S4, the second gas flows into the first space 301, which tends to cause a film formation reaction in the first space 301. According to the technology disclosed herein, in step S2, an inhibition layer can be formed on the surface of an object in the first space 301 (e.g., the inner wall of the lower chamber 201b, the gate valve 501, etc.) at the same time as forming the inhibition layer on the wafer 1. Therefore, the generation of foreign matter in the first space 301 can be suppressed.

[0077] The above-described embodiments and modifications may be used in combination as appropriate. The processing procedures and processing conditions in such a case may be the same as those of the above-described embodiments and modifications, for example.

[0078] In the above-described embodiment and modified example, an example has been described in which step S2 (adsorption inhibition treatment step) is performed to supply an adsorption inhibitor gas as the first gas before step S4 (film formation treatment step). The present disclosure also applies to a case in which an adsorption assisting gas that assists the adsorption of a first source gas, which is part of a second gas to be supplied later, is supplied as the first gas in step 2. The adsorption assisting gas assists the adsorption of the first source gas, which is to be supplied later, onto at least a portion of the surface of the wafer 1. In other words, it is possible to assist in film formation on at least a portion of the surface of the wafer 1 (selective film formation). The adsorption assisting gas can also be called a film formation assisting gas because of its property of assisting film formation by a source gas in the film formation treatment step.

[0079] In step S4, one of step S42 and step S44 may be omitted. That is, only one of the first source gas and the second source gas may be supplied into the second space 302 to process the wafer 1. Also, in step S4, step S43 may be performed at least partially simultaneously with step S41. That is, the first source gas and the second source gas may be at least partially simultaneously supplied into the second space 302 to process the wafer 1. In these cases, the same effect can be obtained.

[0080] In the above-described embodiment, an example of forming a film using a single-wafer substrate processing apparatus that processes one or several substrates at a time has been described. The present disclosure is not limited to the above-described embodiment and modifications, and can be suitably applied to, for example, a case where a film is formed using a batch-type substrate processing apparatus that processes several substrates at a time, regardless of whether the processing furnace is a hot-wall type or a cold-wall type.

[0081] When using these substrate processing apparatuses, each process can be performed under the same process procedures and conditions as in the above-described embodiment, and the same effects as in the above-described embodiment can be obtained.

[0082] 201: Processing vessel 202: Partition 204: Elevation mechanism (drive unit) 206: Substrate placement table (placement unit) 215: First supply system 220: Second supply system 400: Control unit

Claims

1. A substrate processing apparatus comprising: a processing vessel including a first space and a second space located above the first space; a mounting part on which a substrate is placed; a drive part for driving the mounting part; a first supply system for controlling the supply of a first gas into the processing vessel; a second supply system for controlling the supply of a second gas, the second gas having a molecular structure different from that of the first gas, into the processing vessel; and a control part configured to be able to control the drive part, the first supply system, and the second supply system so that the following processes are performed in order: (a) a process of supplying the first gas to the substrate in the first space; (b) a process of placing the substrate in the second space; and (c) a process of supplying the second gas to the substrate in the second space.

2. The substrate processing apparatus of claim 1, wherein the first supply system includes a first supply unit provided in the first space, the second supply system includes a second supply unit provided in the second space, and the control unit (a) further controls the first supply system so that the first gas is supplied via the first supply unit, and (c) further controls the second supply system so that the second gas is supplied via the second supply unit.

3. The substrate processing apparatus of claim 1, further comprising an exhaust system and a first exhaust port connecting the first space and the exhaust system, wherein the control unit further controls the exhaust system so that gas is exhausted from the first exhaust port in (a).

4. The substrate processing apparatus of claim 3, further comprising a second exhaust port that connects the second space with the exhaust system and is different from the first exhaust port, and the control unit further controls the exhaust system so that gas is exhausted from the second exhaust port in (b).

5. The substrate processing apparatus according to claim 4, wherein the control unit is further capable of controlling the exhaust system so that the pressure in the second space in (a) is higher than the pressure in the first space in (a).

6. The substrate processing apparatus of claim 4, wherein the control unit is further capable of controlling the exhaust system so that (1) in (a) the gas conductance downstream of the first exhaust port is greater than the gas conductance downstream of the second exhaust port, or (2) in (a) so that gas is not exhausted from the second exhaust port.

7. The substrate processing apparatus according to claim 4, wherein the control unit is further capable of controlling the exhaust system so that gas is further exhausted from the second exhaust port in (a).

8. A substrate processing apparatus according to any one of claims 1 to 7, further comprising a third supply system that supplies a purge gas to the second space, and wherein the control unit is capable of further controlling the third supply system so that the purge gas is supplied into the second space in (a).

9. A substrate processing apparatus according to any one of claims 1 to 7, further comprising a temperature adjustment unit that controls the temperature of the substrate, wherein the control unit is capable of further controlling the temperature adjustment unit so that the temperature of the substrate in (a) is lower than the temperature of the substrate in (b).

10. A substrate processing apparatus according to any one of claims 1 to 7, further comprising a loading / unloading port provided in the first space and configured to allow the substrate to be moved between the inside and outside of the processing vessel.

11. The substrate processing apparatus according to any one of claims 1 to 8, further comprising a partition that restricts gas flow between the first space and the second space.

12. The substrate processing apparatus according to claim 11, wherein the partition is configured to overlap a portion of the substrate placement unit when viewed from the direction in which the substrate placement unit is driven.

13. A substrate processing apparatus according to any one of claims 1 to 7, wherein in (a), an inhibiting layer is formed on at least a portion of the surface of the substrate to inhibit the progress of processing by the second gas in (b).

14. The substrate processing apparatus according to claim 13, wherein in (a), the suppression layer is further formed on at least a portion of the surface of the object in the first space.

15. The substrate processing apparatus according to any one of claims 1 to 8, wherein the first supply system has a supply unit disposed at a position facing the surface of the substrate.

16. The substrate processing apparatus according to any one of claims 1 to 7, wherein the mounting section is configured to be able to mount a plurality of the substrates thereon.

17. A substrate processing apparatus according to any one of claims 1 to 7, further comprising an activation unit that activates the gas in the second space by changing the potential difference between the placement unit and a member other than the placement unit.

18. A substrate processing method comprising the steps of: (a) supplying a first gas to a substrate in a first space within a processing vessel; (b) placing the substrate in a second space within the processing vessel that is located above the first space; and (c) supplying a second gas, the molecular structure of which is different from that of the first gas, to the substrate in the second space.

19. A method for manufacturing a semiconductor device, comprising the steps of: (a) supplying a first gas to a substrate in a first space within a processing vessel; (b) placing the substrate in a second space within the processing vessel that is located above the first space; and (c) supplying a second gas having a molecular structure different from that of the first gas to the substrate in the second space.

20. A program that causes a computer to cause a substrate processing apparatus to execute the following procedures in order: (a) supplying a first gas to a substrate in a first space in a processing vessel; (b) placing the substrate in a second space in the processing vessel that is located above the first space; and (c) supplying a second gas, the molecular structure of which is different from that of the first gas, to the substrate in the second space.

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