Semiconductor protection apparatus and semiconductor process device

Abstract

The present application relates to the technical field of semiconductors, and discloses a semiconductor protection apparatus and a semiconductor process device, which can prevent vaporized chemical liquids in a piping area from entering an electrical area, thereby avoiding the safety problems of combustion and explosion. The semiconductor protection apparatus comprises a frame structure comprising a frame body and a frame plate; the frame plate is arranged in the frame body, and is used for dividing the internal space of the frame body into a piping area and an electrical area; the electrical area is filled with a process gas; the piping area is provided with a liquid storage unit; and the gas pressure value of the piping area is less than that of the electrical area.

Description

Semiconductor protection devices and semiconductor process equipment Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor protection device and semiconductor process equipment. Background Art

[0002] With the advancement of technology, the demand for and variety of chips has increased significantly as electronic devices improve in functionality and quality. Consequently, many new processes have emerged in chip manufacturing, each requiring corresponding integrated equipment. Wafer cleaning is a crucial step. Cleaning procedures vary after different process steps, necessitating the use of different chemicals based on specific needs. These chemicals, in turn, become increasingly complex and hazardous. Among these, colorless, odorless, volatile, flammable, and explosive chemicals pose a particularly high risk.

[0003] Currently, this type of liquid medicine equipment generally includes a pipeline area and an electrical area. If the liquid medicine in the pipeline area evaporates and enters the electrical area, once the power is turned on, any sparks generated during the power-on process or static electricity generated in the electrical area will cause safety hazards such as combustion and explosion, causing immeasurable damage to the environment and workers, and causing serious safety problems. Therefore, the safety and sealing of this type of liquid medicine equipment are particularly important. Summary of the Invention

[0004] The embodiments of the present application provide a semiconductor protection device and semiconductor process equipment, which can prevent volatile gases from the chemical liquid in the pipeline area from entering the electrical area, avoiding the safety problems of combustion and explosion.

[0005] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:

[0006] On the one hand, an embodiment of the present application provides a semiconductor protection device, including a frame structure, the frame structure including a frame body and a frame plate; the frame body is used to isolate the external environment of the semiconductor protection device; the frame plate is arranged inside the frame body, and is used to divide the internal space of the frame body into a pipeline area and an electrical area, the electrical area is filled with process gas, the pipeline area is provided with a liquid storage unit, the liquid storage unit is used to store process liquid, and the gas pressure value of the pipeline area is less than the gas pressure value of the electrical area.

[0007] In some embodiments, the gas pressure value of the pipeline area is lower than the gas pressure value of the external environment of the semiconductor protection device, and the gas pressure value of the electrical area is higher than the gas pressure value of the external environment of the semiconductor protection device.

[0008] In some embodiments, the difference between the gas pressure value of the pipeline area and the gas pressure value of the external environment of the semiconductor protection device is in the range of [-520Pa, -480Pa], and the difference between the gas pressure value of the electrical area and the gas pressure value of the external environment of the semiconductor protection device is in the range of [3Pa, 6Pa].

[0009] In some embodiments, the frame structure is an integrated frame structure, and the material of the frame body and the material of the frame plate are both explosion-proof materials.

[0010] In some embodiments, the liquid storage unit includes a liquid storage tank and a liquid leakage tray, the liquid leakage tray and the liquid storage tank are an integrated structure, and the liquid leakage tray is arranged at the lower end of the liquid storage tank;

[0011] The pipeline area is further provided with a first liquid leakage detection unit; the first liquid leakage detection unit is arranged on the liquid leakage tray and is used to detect whether there is liquid on the liquid leakage tray.

[0012] In some embodiments, a groove is provided at the bottom of the frame body; the groove is arranged opposite to the liquid outlet of the liquid storage tank, and a leakage hole is provided at the bottom of the groove;

[0013] The pipeline area is further provided with a second liquid leakage detection unit; the second liquid leakage detection unit is arranged in the groove and does not block the leakage hole, and is used to detect whether there is liquid in the groove and output a second liquid leakage detection signal.

[0014] In some embodiments, the pipeline area is further provided with a flame detection installation box and a flame detection unit; the flame detection unit is arranged inside the flame detection installation box, and is used to detect whether a flame is generated on the liquid storage tank;

[0015] The flame detection installation box is located above the liquid storage tank and is fixedly arranged on the top of the frame body; the material of the flame detection installation box is explosion-proof material.

[0016] In some embodiments, the pipeline area is also provided with a heating unit and a temperature detection unit; the heating unit is used to heat the liquid stored in the liquid storage tank; the temperature detection unit is used to detect whether the temperature at the location of the heating unit is greater than a preset temperature, and the preset temperature is lower than the ignition point of the liquid stored in the liquid storage tank.

[0017] In some embodiments, the electrical area is provided with a pressure detection control unit for determining whether the actual pressure difference between the gas pressure value of the electrical area and the gas pressure value of the external environment of the semiconductor protection device is within a preset pressure difference range.

[0018] In some embodiments, the semiconductor protection device is applied to semiconductor process equipment, wherein the semiconductor process equipment includes a power-on circuit and a load, wherein the power-on circuit is used to provide an AC power signal to the load;

[0019] The electrical area is also provided with a first relay unit, an intermediate relay and a contactor;

[0020] The first relay unit is used to control the on / off state of the intermediate relay under the control of any combination of the five units of the first leakage detection unit, the second leakage detection unit, the flame detection unit, the temperature detection unit and the pressure detection control unit;

[0021] The contactor is used to control the power-on circuit to be disconnected when an abnormality is detected in any combination of units under the control of the intermediate relay.

[0022] In some embodiments, the semiconductor process equipment further comprises a first power supply and a second power supply; the power-on circuit comprises an AC power supply;

[0023] The electrical area is further provided with an AC power terminal, a first power terminal and a second power terminal, the AC power terminal is used to receive an AC power signal output by the AC power supply, the first power terminal is used to receive a first power signal output by the first power supply, and the second power terminal is used to receive a second power signal output by the second power supply;

[0024] The first relay unit includes five relays; the first liquid leakage detection unit, the second liquid leakage detection unit, the flame detection unit, the temperature detection unit, and the pressure detection control unit are electrically connected to the coils of the five relays in a one-to-one correspondence; the coils of the five relays are also electrically connected to the first power supply terminal respectively;

[0025] The coil of the intermediate relay and the normally closed contacts of the five relays are sequentially connected in series between the second power supply terminal and the first power supply terminal;

[0026] The coil of the contactor is electrically connected to the intermediate contact of the intermediate relay and the second power supply terminal respectively, and the normally open contact of the intermediate relay is also electrically connected to the first power supply terminal;

[0027] The power-on circuit includes the AC power supply end, the power-on switch and the multiple contact contacts of the contactor electrically connected in sequence; the multiple contact contacts of the contactor are arranged between the power-on switch and the load; the intermediate contact of the intermediate relay and the multiple contact contacts of the contactor are all normally open contacts or normally closed contacts; the power-on circuit is disconnected when any combination of the five units among the first leakage detection unit, the second leakage detection unit, the flame detection unit, the temperature detection unit and the pressure detection control unit detects an abnormality.

[0028] On the other hand, an embodiment of the present application provides a semiconductor process equipment, including a process chamber and the above-mentioned semiconductor protection device, wherein the semiconductor protection device is used to provide process liquid to the process chamber.

[0029] An embodiment of the present application provides a semiconductor protection device and semiconductor process equipment. In the semiconductor protection device, the electrical area is filled with process gas, and the gas pressure value in the pipeline area is lower than the gas pressure value in the electrical area. Based on the pressure difference principle, the gas formed by the volatilization of the process liquid stored in the liquid storage unit in the pipeline area can be prevented from entering the electrical area, thereby avoiding the safety problem of combustion and explosion.

[0030] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The following is a brief introduction to the drawings required for use in the embodiments or descriptions of the prior art in conjunction with the accompanying drawings. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0032] FIG1 is a schematic structural diagram of a liquid medicine device provided by the related art;

[0033] FIG2 is a schematic structural diagram of a semiconductor protection device provided in an embodiment of the present application;

[0034] FIG3 is a schematic structural diagram of a first wiring hole provided in an embodiment of the present application;

[0035] FIG4 is a schematic diagram of the structure of a second liquid leakage detection unit according to an embodiment of the present application;

[0036] In FIG5 , FIGa is a schematic structural diagram of a groove provided in an embodiment of the present application, and FIGb is a second schematic structural diagram of a second liquid leakage detection unit provided in an embodiment of the present application;

[0037] FIG6 is a schematic structural diagram of a flame detection unit provided in an embodiment of the present application;

[0038] FIG7 is a schematic structural diagram of an exhaust unit provided in an embodiment of the present application;

[0039] In FIG8 , FIGa is one of the circuit structure diagrams of the power-on circuit provided in an embodiment of the present application, and FIGb is one of the connection structure diagrams of the first relay unit, the intermediate relay and the contactor;

[0040] In FIG9 , FIGa is a second schematic diagram of the circuit structure of the power-on circuit provided in an embodiment of the present application, and FIGb is a second schematic diagram of the connection structure of the first relay unit, the intermediate relay and the contactor;

[0041] FIG10 is a schematic diagram of a circuit control structure provided in an embodiment of the present application;

[0042] FIG11 is a schematic diagram of a structure for eliminating static electricity provided in an embodiment of the present application;

[0043] FIG12 is a schematic diagram of a positive pressure detection result provided in an embodiment of the present application.

[0044] FIG13 is a schematic diagram of a negative pressure detection result provided in an embodiment of the present application;

[0045] FIG14 is a schematic diagram of a temperature detection result provided in an embodiment of the present application;

[0046] FIG15 is a schematic structural diagram of a semiconductor process equipment provided in an embodiment of the present application;

[0047] FIG16 is a schematic structural diagram of another semiconductor process equipment provided in an embodiment of the present application. DETAILED DESCRIPTION

[0048] To make the purpose, technical solutions, and advantages of this application more clear, the technical solutions of this application will be clearly and completely described below in conjunction with the specific embodiments of this application and the corresponding drawings. Obviously, the embodiments described are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0049] In the embodiments of the present application, words such as "first" and "second" are used to distinguish identical or similar items with substantially the same functions and effects. This is only for the purpose of clearly describing the technical solutions of the embodiments of the present application, and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.

[0050] In the embodiments of the present application, the meaning of "plurality" is two or more, unless otherwise specifically defined. In the description of the present application, it should be understood that the terms "upper", "lower", "front", "back", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the present application.

[0051] Figure 1 illustrates a prior art liquid medicine equipment. As shown in Figure 1 , the equipment includes an electrical area and a piping area. The piping area is primarily used for installing mechanical components and laying out piping. The piping area includes a process tank, an isolation and explosion-proof box, a pump, a heater, and a leak sensor. The process tank is a covered tank used to store flammable and explosive liquids. The isolation and explosion-proof box encloses the entire process tank, creating a sealed seal and separating it from other components in the piping area to prevent flammable and explosive liquids from entering other areas of the piping area. The heater heats the liquid to a specified temperature as needed. The pump pumps the liquid from the process tank to the heater. The leak sensor detects the presence of liquid. When liquid is detected, the sensor sends a signal to a host computer, which then issues an alarm and stops the equipment. The electrical area is primarily used for installing electrical components and connecting power and signal lines to all components. A partition is installed between the electrical area and the piping area to prevent evaporating liquids from the piping area from entering the electrical area and contacting the electrical components there. The partition is provided with a first cable inlet, a rectangular hole for routing wiring for equipment in the piping area; the electrical area is provided with a second cable inlet, a rectangular hole for routing power cables for the equipment's plant services end.

[0052] Because the piping and electrical areas require cable entry points, the device shown in Figure 1 struggles to completely isolate them. Furthermore, the explosion-proof box requires reserved piping entry and exit holes, making it difficult to completely seal the process tank. If this seal fails, or if the liquid evaporates rapidly during high-temperature heating and fills the piping area, reaching a certain concentration could cause spontaneous combustion and explosion. Alternatively, if the liquid evaporates and enters the electrical area, any sparks generated during power-up, or static electricity within the electrical area, could cause combustion and explosion safety issues.

[0053] In addition, the detection method in Figure 1 is simple, with only one liquid leakage sensor, resulting in a low safety level. It is also not connected to the entire power supply system, making it impossible to perform preliminary safety checks before the device is powered on and put into operation. The device shown in Figure 1 is a self-explosive system. If it explodes, it will explode within the isolated explosion-proof box. The isolated explosion-proof box is only a protective device to prevent the spread of the explosion and has no other functions. The size of the isolated explosion-proof box is not designed to be too large, just enough to wrap around the tank, and is suitable for small liquid storage tanks with a volume of less than 10 liters. Due to the small space and structural limitations of the isolated explosion-proof box, it is impossible to install detection devices. Therefore, it is impossible to use methods such as sealing detection, space temperature detection, and flame detection. It is also impossible to perform preliminary safety checks before the device is powered on and put into operation based on these test results.

[0054] At the same time, isolation explosion-proof boxes have strict requirements for design, testing, and certification, and the requirements for the box itself are very high. First, the explosion-proof box should not be too large and cannot be used in large liquid storage tanks such as 30-60 liters. Moreover, the explosion-proof box must not contain any devices that cause sparks or static electricity, except for the liquid used by the equipment. After the explosion-proof box is designed, it must be tested by a qualified third-party certification agency in collaboration with the designers. The certification agency must pass and issue the explosion-proof certification before it can be used on the machine. Field testing conditions simulate various situations that the equipment may encounter in the actual use environment, and conduct multiple tests under different conditions. Test conditions include concentration, temperature, dustproofing, sealing, anti-static, shock, vibration, humidity, and corrosion resistance. Therefore, the cycle from design to final use of the explosion-proof box is long, the design and processing are difficult, the cost is high, and the cost-effectiveness is low.

[0055] Based on the above, an embodiment of the present application provides a semiconductor protection device, as shown in Figure 2, including a frame structure 1, the frame structure 1 including a frame body 11 and a frame plate 12; the frame body 11 is used to isolate the external environment of the semiconductor protection device; the frame plate 12 is arranged inside the frame body 11, and is used to divide the internal space of the frame body 11 into a pipeline area A and an electrical area B, the electrical area B is filled with process gas, and the pipeline area A is provided with a liquid storage unit 2, the liquid storage unit 2 is used to store process liquid, and the gas pressure value of the pipeline area A is less than the gas pressure value of the electrical area B.

[0056] The space enclosed by the frame body 11 is the internal space of the frame body 11, and the external environment of the semiconductor protection device refers to the spatial environment outside the space enclosed by the frame body 11. The requirements for the external environment of the semiconductor protection device are not limited here, and need to be determined according to the application scenario of the semiconductor protection device. For example, the semiconductor protection device is arranged outside the process chamber, and the two are in the same environment (for example, atmospheric environment), then the external environment of the semiconductor protection device is the environment (for example, atmospheric environment).

[0057] The semiconductor protection device can separate the internal space of the frame body 11 from the external environment of the semiconductor protection device. The liquid storage unit 2 is disposed within the pipeline area A of the internal space of the frame body 11. The semiconductor protection device can effectively prevent the flammable and explosive gases formed by the volatilization of the process liquid in the liquid storage unit 2 from leaking into the external environment of the semiconductor protection device, thereby avoiding the impact on the external environment of the semiconductor protection device, enhancing the protective effect of the liquid storage unit 2, and thus improving safety. It should be noted that the liquid storage unit 2 in the pipeline area A is used to store process liquid. The semiconductor protection device can be a device that stores process liquid, or it can be a device that does not store process liquid, and this is not limited here.

[0058] The type of process gas filled in the electrical area B is not limited. For example, the process gas may be an inert gas, such as nitrogen, argon or helium. The process gas may also be CDA (Clean Dry Air).

[0059] The structure of the liquid storage unit 2 is not limited. For example, the liquid storage unit 2 can be a liquid storage tank or a liquid storage tank. The type of process liquid stored in the liquid storage unit 2 is not limited. For example, the process liquid can be a flammable, explosive, or volatile liquid, such as IPA (isopropyl alcohol).

[0060] The electrical area B is used for the installation of electrical components and the connection of power and signal lines to all components. Therefore, it is very important to ensure that there are no flammable or explosive gases in the electrical area B. Any spark or static electricity that ignites flammable or explosive gases can cause fire or explosion.

[0061] The aforementioned piping area A is primarily used for the installation of mechanical components, such as liquid storage tanks, liquid pumps, heating units, exhaust units, piping, connectors, various detection units, and wiring layout. During the wafer cleaning process, this semiconductor protection device is used to supply chemical liquids to the chamber area. The piping area contains a large amount of flammable and explosive liquids, so the design of good sealing, isolation, and detection devices is particularly important.

[0062] In the semiconductor protection device provided in the embodiment of the present application, the electrical area B is filled with process gas, and the gas pressure value of the pipeline area A is lower than the gas pressure value of the electrical area B. Based on the pressure difference principle, the gas formed after the volatilization of the process liquid stored in the liquid storage unit 2 in the pipeline area A can be prevented from entering the electrical area B, thereby avoiding the safety problem of combustion and explosion.

[0063] In one or more embodiments, in order to further prevent the gas formed after the volatilization of the liquid in the pipeline area A from leaking from the pipeline area A to the external environment and to minimize the impact on the external environment, the gas pressure value of the pipeline area A is less than the gas pressure value of the external environment of the semiconductor protection device. At this time, the difference between the gas pressure value of the pipeline area A and the gas pressure value of the external environment of the semiconductor protection device is a negative value; in order to prevent the flammable and explosive gas formed after the volatilization of the liquid in the pipeline area A from entering the electrical area B, the gas pressure value of the electrical area B is greater than the gas pressure value of the external environment of the semiconductor protection device. At this time, the difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device is a positive value.

[0064] Considering factors such as the confined space where the chemical solution is used, the size and volume of pipeline area A, the temperature at which the chemical solution is used, the thickness of the pipe, and the pressure at the inlet, the difference between the gas pressure in pipeline area A and the gas pressure in the environment outside the semiconductor protection device is within a range of [-520Pa, -480Pa], thereby preventing flammable and explosive gases formed by the volatilization of the liquid in pipeline area A from leaking into the external environment. For example, the difference between the gas pressure in pipeline area A and the gas pressure in the environment outside the semiconductor protection device can be -520Pa, -500Pa, -490Pa, or -480Pa, etc.

[0065] Considering factors such as the operating environment of the devices in the electrical area B and the size of the space, at the same time, in a confined space, the difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device should not be too large, otherwise it will cause an explosion hazard, resulting in damage to the equipment and structural destruction. Therefore, the difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device needs to be set within a reasonable range. In some embodiments, the difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device is in the range of [3Pa, 6Pa]. For example, the difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device can be 3Pa, 4Pa, 5Pa or 6Pa, etc.

[0066] To enhance sealing and device safety, the frame structure 1 is an integrated structure. The frame body 11 and frame plate 12 are welded together to form a single structure. This welding design ensures a seamless connection between the frame plate 12 and the frame body 11, improving sealing. Both the frame body 11 and the frame plate 12 are made of explosion-proof materials, thereby enhancing explosion-proof performance. For example, the explosion-proof material can be an explosion-proof metal such as iron, copper, or gold; alternatively, the explosion-proof material can be an explosion-proof metal alloy such as stainless steel.

[0067] Since the cables in the pipeline area A need to enter the electrical area B through the frame plate 12, as shown in Figure 2, the frame plate 12 is provided with multiple first wiring holes 120 with different apertures. The first wiring holes 120 with different apertures can adapt to cables of different thicknesses and have high adaptability. Compared with the rectangular holes provided in the prior art, on the one hand, the adaptability can be improved, and on the other hand, the sealing of the frame plate 12 can be maximized.

[0068] The shape, specific number and distribution position of the first wiring holes 120 are not limited and can be selected according to actual needs. Since the cross section of the cable is mostly circular, the first wiring holes 120 can be circular holes.

[0069] In order to further improve the sealing and explosion-proof properties, each first wiring hole 120 can be fixed with a cable fixture made of explosion-proof material, and the hole can be filled with explosion-proof material, so as to achieve both explosion-proof and safety while ensuring good sealing, and have a high safety level.

[0070] In one or more embodiments, as shown in FIG. 2 , the liquid storage unit 2 includes a liquid storage tank 21 and a liquid leakage tray 22 . The liquid leakage tray 22 and the liquid storage tank 21 are an integrated structure, and the liquid leakage tray 22 is disposed at the lower end of the liquid storage tank 21 .

[0071] Liquid storage tank 21 is an integrated tank for storing flammable, explosive, and volatile liquids. It features high integration, excellent sealing, and is leak-resistant. A leak pan 22 is welded to the tank 21 to form an integral structure. This pan is used to contain any leaks from the tank 21, preventing them from flowing into other areas of pipeline area A, should a minor leak occur.

[0072] Since the liquid storage tank 21 is arranged in an integrated explosion-proof frame structure, there is no need to set an isolation explosion-proof box outside the liquid storage tank 21. A liquid storage tank 21 of corresponding volume can be selected according to actual requirements. For example, the liquid storage tank 21 can be a small-volume liquid storage tank 21 of less than 10 liters, or it can also be a large-volume liquid storage tank 21 of 30-60 liters.

[0073] The semiconductor protection device provided in the embodiment of the present application abandons the design of the isolation explosion-proof box in the prior art and adopts an integrated explosion-proof frame and an integrated liquid storage tank structure, which not only meets the storage needs of large-capacity liquids, but also reduces the design and processing requirements. In addition, there is no need to conduct third-party simulation testing on a certain container or device, the verification cycle is greatly shortened, the cost is greatly saved, the cost-effectiveness is improved, the overall structure is simpler, and it is more in line with the development of the industry and mass production needs.

[0074] To ensure the safe operation of the equipment, it is necessary to detect the status of the equipment and take appropriate measures to ensure that no dangerous events are caused in a potentially explosive environment. To achieve this design, the following key challenges need to be overcome:

[0075] In terms of installation location selection, it is crucial to select the appropriate location for the detection device to ensure accurate detection of environmental conditions. In explosion-proof equipment, it is usually necessary to install the detection device at the most potentially dangerous point. This requires careful consideration of the equipment layout and surrounding environment to ensure that the hazardous substances or conditions in the environment can be captured.

[0076] In terms of installation methods, in explosion-proof equipment, it is necessary to ensure that the detection components used can operate reliably and for a long time under extreme conditions. This requires consideration of installation materials, angles, and packaging methods to prevent hazardous substances in the environment from corroding, blocking, and damaging the detection components.

[0077] In terms of explosion-proof electrical connections and grounding, connecting detection devices to the power-on interlock system requires correct electrical connections, while ensuring that the grounding of the equipment is reliable. In hazardous environments, any static electricity or electrical faults may lead to dangerous events.

[0078] In terms of explosion-proof performance requirements, the detection device itself must be explosion-proof to prevent sparks or other hazards in hazardous environments. This requires special design and the use of explosion-proof materials to ensure that the equipment can operate safely in these environments.

[0079] In terms of the complexity of explosive environments, they usually include flammable gases, vapors or dusts, which may vary greatly in temperature, humidity, concentration and pressure. Therefore, detection devices must be able to work reliably under various conditions.

[0080] In terms of regulations and standards, explosion-proof equipment must comply with specific regulations and standards to ensure its safety in hazardous environments. Therefore, the design and manufacture of explosion-proof equipment must meet these standards and regulations, which also increases the complexity of the design.

[0081] In accordance with the above requirements, the semiconductor protection device provided in the embodiment of the present application is provided with a first leakage detection unit LS1, a second leakage detection unit LS2, a flame detection unit FS, a temperature detection unit TS, and a pressure detection control unit CT, which are described below.

[0082] In one or more embodiments, as shown in FIG. 2 , the pipeline area A is further provided with a first liquid leakage detection unit LS1 ; the first liquid leakage detection unit LS1 is provided on the liquid leakage tray 22 for detecting whether there is liquid on the liquid leakage tray 22 .

[0083] The first liquid leakage detection unit LS1 detects whether there is liquid on the liquid leakage tray 22 and further detects whether there is leakage in the liquid storage tank 21. Even if there is a slight leakage in the liquid storage tank 21, it can be discovered in time.

[0084] There is no limitation on the structure of the first liquid leakage detection unit LS1 as long as it can meet the relevant functions.

[0085] In one or more embodiments, as shown in FIG. 4 , a groove 110 is provided at the bottom of the frame body 11 ; the groove 110 is arranged opposite to the liquid outlet of the liquid storage tank 21 , and a liquid leakage hole 111 is provided at the bottom of the groove 110 .

[0086] Pipeline area A is also provided with a second liquid leakage detection unit LS2; the second liquid leakage detection unit LS2 is disposed within the groove 110 and avoids the leakage hole 111, and is used to detect the presence of liquid within the groove 110 and output a second liquid leakage detection signal. It should be noted that, referring to FIG4 , a fixing bracket 4 can be provided to fix the position of the second liquid leakage detection unit LS2. The fixing method of the second liquid leakage detection unit LS2 and the fixing bracket 4 is not limited here. FIG4 illustrates an example in which the second liquid leakage detection unit LS2 passes through the fixing bracket 4 and is fixed to the fixing bracket 4. In FIG4 , part of the second liquid leakage detection unit LS2 is disposed above the fixing bracket 4, and another part is disposed below the fixing bracket 4. In Figure 4, the marking line of the second liquid leakage detection unit LS2 is marked on the part where the second liquid leakage detection unit LS2 is arranged below the fixed bracket 4; in Figure 5b, due to the obstruction of "h", the marking line of the second liquid leakage detection unit LS2 is marked on the part where the second liquid leakage detection unit LS2 is arranged above the fixed bracket 4; in Figure 4 and Figure 5b, although the positions of the marking lines of the second liquid leakage detection unit LS2 are different, they both refer to the second liquid leakage detection unit LS2.

[0087] Since there are many pipelines in the area below the liquid outlet of the liquid storage tank 21, leakage is prone to occur. Therefore, a groove 110 and a second leakage detection unit LS2 need to be set in the area below the liquid outlet of the liquid storage tank 21. The leaked liquid can be collected through the groove 110, and detection is convenient at the same time. In addition, a leakage hole 111 is provided at the bottom of the groove 110. When leakage occurs, the liquid can be discharged from the leakage hole 111, which has a drainage function.

[0088] The bottom thickness of the frame body 11 cannot be designed to be too thick, otherwise it will be heavy and costly, nor can it be designed to be too thin, otherwise it will be difficult to form the groove 110. In some embodiments, the bottom thickness of the frame body 11 ranges from 1 to 3 cm. For example, the bottom thickness of the frame body 11 is 1 cm, 2 cm, or 3 cm.

[0089] The structure of the second liquid leakage detection unit LS2 is not limited here, as long as it can meet the relevant functions. The structure of the second liquid leakage detection unit LS2 can be the same as or different from the structure of the first liquid leakage detection unit LS1.

[0090] In order to improve the accuracy of detection and ensure that the leakage is drained to the greatest extent possible, as shown in FIG5a , the groove 110 includes a first sub-groove 1101 and a second sub-groove 1102 that are connected to each other; a leakage hole 111 is provided at the bottom of the first sub-groove 1101; as shown in FIG5b , the second leakage detection unit LS2 is provided in the second sub-groove 1102; the size of the second sub-groove 1102 is larger than that of the first sub-groove 1101.

[0091] The aforementioned larger dimensions of the second sub-groove 1102 than the first sub-groove 1101 refer to: as shown in Figure 5a , the length L2 of the second sub-groove 1102 is greater than the length L1 of the first sub-groove 1101, and the width W2 of the second sub-groove 1102 is greater than the width W1 of the first sub-groove 1101. This not only better collects leaked liquid in the first sub-groove 1101 for easy drainage through the leakage hole 111, but also facilitates installation of the second leakage detection unit LS2. The shapes of the first and second sub-grooves 1101, 1102 are not limited. For example, the contour of the recess 110 formed by the first and second sub-grooves 1101, 1102, resembles the "h" shape shown in Figure 5b . The opening dimensions of the first sub-groove 1101 are adapted to the dimensions of the leakage hole 111. As shown in Figure 5b , a fixing bracket 4 may also be provided within the second sub-groove 1102 to secure the second leakage detection unit LS2 as close to the leakage hole as possible. As shown in FIG4 , a leakage pipe 5 may be provided below the leakage hole 111 to discharge the leaked liquid to a safe location.

[0092] Because liquid storage tank 21 contains the most flammable and explosive liquids within piping area A and is the most dangerous and prone to combustion, a flame detection unit FS is required to be installed above liquid storage tank 21 to quickly detect danger and initiate a response. In one or more embodiments, as shown in FIG6 , piping area A is further provided with a flame detection mounting box 6 and a flame detection unit FS. The flame detection unit FS is disposed within the flame detection mounting box 6 and is used to detect whether a flame is generated on liquid storage tank 21. The flame detection mounting box 6 is located above the liquid storage tank 21 and is fixedly mounted on the top of the frame body 11. The flame detection mounting box 6 is made of explosion-proof material.

[0093] The flame detection mounting box 6 can be secured to the frame body 11 by welding to form an integrated structure. Because the flame detection unit FS uses light for detection, as shown in Figure 6 , a light-transmitting portion 61 is provided on the side of the flame detection mounting box 6 facing the liquid storage tank 21. This light-transmitting portion is made of explosion-proof glass. Explosion-proof glass is transparent, explosion-proof, pollution-resistant, and fog-resistant. The remaining portion of the flame detection mounting box 6, excluding the light-transmitting portion, can be made of metallic iron.

[0094] In one or more embodiments, as shown in Figure 2, the pipeline area A is also provided with a heating unit 7 and a temperature detection unit TS; the heating unit 7 is used to heat the liquid stored in the liquid storage tank 21; the temperature detection unit TS is used to detect whether the temperature at the location of the heating unit 7 is greater than a preset temperature, and the preset temperature is lower than the ignition point of the liquid stored in the liquid storage tank 21.

[0095] The above-mentioned preset temperature needs to be set according to the ignition point of the liquid stored in the liquid storage tank 21. For example, if the liquid stored in the liquid storage tank 21 is IPA, the ignition point of IPA is about 80 degrees, so the preset temperature can be set to 70 degrees.

[0096] Since the temperature at the location of the heating unit 7 in the entire pipeline area A is the highest, when heating the liquid, a certain amount of high-temperature gas is most likely to evaporate from the pipeline connection of the heating unit 7. Therefore, in order to more accurately detect the temperature at the location of the heating unit 7, the above-mentioned temperature detection unit TS can be set at the liquid outlet position of the heating unit 7.

[0097] As shown in FIG2 , the pipeline area A may further include a liquid pump 9 , which extracts the liquid in the liquid storage tank 21 to the heating unit 7 through the pipeline. After the heating unit 7 heats the liquid, the liquid returns to the liquid storage tank 21 through the pipeline.

[0098] The temperature detection unit TS detects whether the temperature at the location of the heating unit 7 is greater than a preset temperature. If the detected temperature is greater than the preset temperature, an early warning message may be issued.

[0099] In one or more embodiments, as shown in Figure 2, the pipeline area A is also provided with an exhaust unit 90, which is arranged on the frame plate 12 and is used to discharge the gas in the pipeline area A so that the gas pressure value of the pipeline area A is lower than the gas pressure value of the external environment of the semiconductor protection device.

[0100] The exhaust unit 90 continuously extracts gas from pipeline area A, creating a negative pressure between pipeline area A and the external environment of the semiconductor protection device. This exhaust unit 90 can discharge flammable and explosive gases generated by the evaporation of liquid in pipeline area A into the atmosphere or a gas treatment device, thereby further preventing gas from leaking from pipeline area A into the external environment of the semiconductor protection device, thereby preventing any danger to the external environment of the semiconductor protection device. Since heating unit 7 is the most prone to gas leakage in pipeline area A, exhaust unit 90 can be positioned near heating unit 7 within frame plate 12 to maximize gas discharge to the exterior of the device and prevent it from entering electrical area B.

[0101] The heating unit 7 can be in the shape of a long strip, with the same length as the frame plate 12 in the horizontal direction, so as to achieve the maximum range of exhaust in the horizontal direction, improve the exhaust effect, shorten the exhaust time, and minimize the risk of the pipeline area A.

[0102] To ensure that the difference between the gas pressure in pipeline area A and the gas pressure in the environment outside the semiconductor protection device remains within a preset range, for example, [-520 Pa, -480 Pa], two pressure detectors 91 and two flow detectors 92, as shown in Figure 7, can be installed at the outlet of the exhaust unit 90 for real-time monitoring. The detected values ​​can be transmitted to the plant controller, which controls the exhaust flow rate and thus the pressure in pipeline area A. The two pressure detectors 91 and two flow detectors 92 operate simultaneously. If one pressure detector 91 or one flow detector 92 fails, the other pressure detector 91 or the other flow detector 92 can be used for detection, thus meeting redundancy design requirements and improving reliability. Referring to Figure 7, the exhaust unit 90 may also include an exhaust port 95 and an exhaust pipeline 96 connected to the client. The temperature detection unit TS may include a temperature sensor 80 and a bracket 81. The temperature sensor 80 is fixed to the bracket 81, which can be installed on the exhaust unit 90.

[0103] In one or more embodiments, as shown in Figure 2, the electrical area B is provided with a pressure detection control unit CT, which is used to obtain whether the actual pressure difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device is within a preset pressure difference range.

[0104] Here, there is no limitation on the specific method for the pressure detection control unit CT to obtain whether the actual pressure difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device is within the preset pressure difference range. For example, the pressure detection control unit CT can respectively detect the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device, and then calculate the difference between the two, and compare the difference with the preset pressure difference range, so as to obtain whether the actual pressure difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device is within the preset pressure difference range.

[0105] The structure of the pressure detection control unit CT is not limited. The preset pressure differential range can be [3 Pa, 6 Pa]. Referring to Figure 2 , the pressure detection control unit CT includes an air inlet IN, an air outlet OUT, and a pressure sensor. Process gas (GAS) enters the pressure detection control unit CT from the air inlet IN via pipeline 60 and is then released into the electrical area B via the air outlet OUT.

[0106] In order to ensure that the pressure difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device is maintained within a preset pressure difference range, as shown in Figure 2, the electrical area B is also provided with an air intake pipe 30 and a regulating valve 20; the regulating valve 20 is arranged on the air intake pipe 30; the pressure detection control unit CT is also used to output a regulating signal to the regulating valve 20 according to the relationship between the actual pressure difference and the preset pressure difference range; the regulating valve 20 is used to receive the regulating signal and adjust the flow of the air intake pipe 30 according to the regulating signal.

[0107] The structure of the pressure detection control unit CT is not limited. The pressure detection control unit CT can also display the pressure difference between the gas pressure in the electrical area B and the gas pressure in the environment outside the semiconductor protection device in real time. The regulating valve 20 can be an automatic regulating valve (AV) for adjusting the flow of inert gas in the intake pipe 30. When the valve is open, it can increase the pressure in the electrical area B by adjusting the internal needle valve.

[0108] The electrical area B is also provided with a ventilation unit 10 and a plurality of second wiring holes 40 with different apertures; the ventilation unit 10 and the second wiring holes 40 are both arranged on the frame body 11; the ventilation unit 10 is used to automatically release the process gas in the electrical area B when the gas pressure value in the electrical area B is greater than the preset pressure value.

[0109] The structure of multiple second wiring holes 40 with different apertures is similar to that of multiple first wiring holes 120 with different apertures. Second wiring holes 40 with different apertures can accommodate cables of varying thicknesses, providing a high degree of adaptability. Compared to the rectangular holes used in the prior art, this improves adaptability, facilitating the routing of cables from electrical area B for connection to the plant service end; it also maximizes the sealing of electrical area B. Since cables are generally circular in cross-section, the second wiring holes 40 can be round.

[0110] In order to further improve the sealing and explosion-proof properties of the electrical area B, each second wiring hole 40 can be fixed with a cable fixture made of explosion-proof material, and the hole can be filled with explosion-proof material, thereby ensuring both explosion-proof and safety while ensuring good sealing, and having a high safety level.

[0111] The structure of the above-mentioned ventilation unit 10 is not limited. For example, when the gas pressure value of the electrical area B is greater than the preset pressure value, the ventilation unit 10 can be opened under the action of the gas pressure, thereby releasing the process gas in the electrical area B, thereby preventing the frame structure 1 from being deformed or cracked due to excessive pressure.

[0112] In one or more embodiments, the above-mentioned semiconductor protection device is applied to semiconductor process equipment, which includes a power-on circuit and a load, and the power-on circuit is used to provide an AC power signal to the load; the electrical area B is also provided with a first relay unit, an intermediate relay and a contactor.

[0113] The first relay unit is used to control the on / off state of the intermediate relay under the control of any combination of the five units: the first leakage detection unit LS1, the second leakage detection unit LS2, the flame detection unit FS, the temperature detection unit TS and the pressure detection control unit CT; the contactor is used to control the power-on circuit to be disconnected when any combination of units detects an abnormality under the control of the intermediate relay.

[0114] It should be noted that the abnormality detected by the first leakage detection unit LS1 means that the first leakage detection unit LS1 detects the presence of liquid on the leakage tray 22; the abnormality detected by the second leakage detection unit LS2 means that the second leakage detection unit LS2 detects the presence of liquid in the groove 110; the abnormality detected by the flame detection unit FS means that the flame detection unit FS detects the generation of flame on the liquid storage tank 21; the abnormality detected by the temperature detection unit TS means that the temperature detection unit TS detects that the temperature at the location of the heating unit 7 is greater than the preset temperature; the abnormality detected by the pressure detection control unit CT means that the pressure detection control unit CT detects that the actual pressure difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device is not within the preset pressure difference range. At this time, the actual pressure difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device may be a negative value, or a positive value that is not within the preset pressure difference range.

[0115] The above arbitrary unit combination refers to a combination of any two units, any three units, any four units or all units among the five units: the first leakage detection unit LS1, the second leakage detection unit LS2, the flame detection unit FS, the temperature detection unit TS and the pressure detection control unit CT.

[0116] The specific structure and connection method of the first relay unit, intermediate relay and contactor are not limited, as long as they can meet the above control requirements.

[0117] In the semiconductor protection device provided in the embodiments of the present application, during the startup of the semiconductor process equipment, any combination of the five units, namely, the first leakage detection unit LS1, the second leakage detection unit LS2, the flame detection unit FS, the temperature detection unit TS, and the pressure detection control unit CT, pre-detects the status of the semiconductor protection device. If an abnormality is detected, the first relay unit is controlled to control the intermediate relay, and then the contactor, ultimately disconnecting the power-on circuit when any combination of units detects an abnormality, preventing the semiconductor process equipment from powering on and operating. If no abnormality is detected, the first relay unit, the intermediate relay, and the contactor cooperate to ensure that the power-on circuit is closed, allowing the semiconductor process equipment to power on and operate normally. In addition, during the operation of the semiconductor process equipment, any combination of the five units, namely, the first leakage detection unit LS1, the second leakage detection unit LS2, the flame detection unit FS, the temperature detection unit TS, and the pressure detection control unit CT, pre-detects the status of the semiconductor protection device. If an abnormality is detected, the first relay unit is controlled to control the intermediate relay, and then the contactor, ultimately disconnecting the power-on circuit when any combination of units detects an abnormality, causing the semiconductor process equipment to stop operating, thereby significantly improving the safety of the equipment.

[0118] In one or more embodiments, the semiconductor process equipment further includes a first power supply and a second power supply; the power-on circuit includes an AC power supply; referring to Figure 8a, the electrical area B is further provided with an AC power supply terminal, a first power supply terminal and a second power supply terminal, the AC power supply terminal is used to receive an AC power supply signal output by the AC power supply, the first power supply terminal is used to receive a first power supply signal output by the first power supply, and the second power supply terminal is used to receive a second power supply signal output by the second power supply.

[0119] The first power supply and the second power supply can be provided separately, or can be obtained by converting the power output of an AC power supply, which is not limited here. The first power signal output by the first power supply and the second power signal output by the second power supply can be the same (for example, a 24V voltage signal) or different.

[0120] Referring to Figure 8 b, the first relay unit includes five relays; the first leakage detection unit LS1, the second leakage detection unit LS2, the flame detection unit FS, the temperature detection unit TS and the pressure detection control unit CT are respectively electrically connected to the coils of the five relays (marked as R1, R2, R3, R4, R5 respectively); the coils of the five relays are also electrically connected to the first power supply terminal respectively; the coil (S / R) of the intermediate relay and the normally closed contacts of the five relays (marked as R1 contact, R2 contact, R3 contact, R4 contact, R5 contact respectively) are sequentially arranged in series between the second power supply terminal and the first power supply terminal; the coil MC of the contactor is respectively electrically connected to the intermediate contact (S / R contact) of the intermediate relay and the second power supply terminal, and the intermediate contact (S / R contact) of the intermediate relay is also electrically connected to the first power supply terminal.

[0121] The power-on circuit includes an AC power supply, a power-on switch, and multiple contacts of a contactor, all electrically connected in sequence. The power-on switch is located within electrical area B; the load is located outside electrical area B, and the multiple contacts of the contactor are located between the power-on switch and the load. The intermediate contact of the intermediate relay and the multiple contacts of the contactor are both normally open or normally closed. The power-on circuit is disconnected if any combination of the five units—the first leakage detection unit LS1, the second leakage detection unit LS2, the flame detection unit FS, the temperature detection unit TS, and the pressure detection control unit CT—detects an abnormality.

[0122] The first liquid leakage detection unit LS1 is further used to output a first liquid leakage abnormality signal to the coil R1 of the corresponding relay when liquid is detected on the leakage tray 22, and the coil R1 of the corresponding relay is energized so that the normally closed contact R1 of the corresponding relay is opened; the second liquid leakage detection unit LS2 is further used to output a second liquid leakage abnormality signal to the coil R2 of the corresponding relay when liquid is detected in the groove 110, and the coil R2 of the corresponding relay is energized so that the normally closed contact R2 of the corresponding relay is opened; the flame detection unit FS is further used to output a flame abnormality signal to the coil R3 of the corresponding relay when flame is detected on the liquid storage tank 21, and the coil R3 of the corresponding relay is energized. The temperature detection unit TS is also used to output a temperature abnormality signal to the coil R4 of the corresponding relay when it detects that the temperature at the location of the heating unit 7 is greater than the preset temperature, and the coil R4 of the corresponding relay is energized to open the normally closed contact R4 of the corresponding relay; the pressure detection control unit CT is also used to output a pressure abnormality signal to the coil R5 of the corresponding relay when it detects that the actual pressure difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device is not within the preset pressure difference range, and the coil R5 of the corresponding relay is energized to open the normally closed contact R5 of the corresponding relay.

[0123] The following example illustrates a case where the intermediate relay's intermediate contact and the contactor's multiple contacts are all normally open. Since the normally closed contacts R1-R5 are connected in series, when any of these normally closed contacts R1-R5 is open, the coil (S / R) of the intermediate relay is de-energized. As shown in Figure 9b, when the normally open contact (S / R contact) of the intermediate relay opens, the coil MC of the contactor loses power, causing the multiple normally open contacts (MC contacts) of the contactor to open, as shown in Figure 9a. This disconnects the circuit between the power switch and the load. Figure 9b illustrates an example where all of the normally closed contacts R1-R5 are open, meaning that all five units, namely, the first leakage detection unit LS1, the second leakage detection unit LS2, the flame detection unit FS, the temperature detection unit TS, and the pressure detection control unit CT, have detected an abnormality.

[0124] That is, during the startup or operation of the semiconductor process equipment, if any of the five conditions is not met, that is, there is no leakage in the leakage tray 22 and the groove 110, there is no flame on the liquid storage tank 21, the temperature is not greater than the preset temperature, and the actual pressure difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device is within the preset pressure difference range, it means that the semiconductor protection device is in an abnormal state, the power-on circuit is disconnected, the equipment stops running or cannot be powered on normally.

[0125] Of course, if the first liquid leakage detection unit LS1 does not detect the presence of liquid on the leakage tray 22, it outputs a first liquid leakage normal signal to the coil R1 of the corresponding relay, maintains the coil R1 of the corresponding relay in a power-off state, and the normally closed contact R1 of the corresponding relay remains in a closed state; if the second liquid leakage detection unit LS2 does not detect the presence of liquid in the groove 110, it outputs a second liquid leakage normal signal to the coil R2 of the corresponding relay, maintains the coil R2 of the corresponding relay in a power-off state, and the normally closed contact R2 of the corresponding relay remains in a closed state; the flame detection unit FS is also used to output a flame normal signal to the coil R3 of the corresponding relay when it detects that no flame is generated on the liquid storage tank 21, and maintains the coil R3 of the corresponding relay in a power-off state. In the power-off state, the normally closed contact R3 of the corresponding relay remains in a closed state; when the temperature detection unit TS detects that the temperature at the location of the heating unit 7 is less than or equal to the preset temperature, the temperature detection unit TS outputs a normal temperature signal to the coil R4 of the corresponding relay, maintaining the coil R4 of the corresponding relay in the power-off state, and the normally closed contact R4 of the corresponding relay remains in a closed state; when the pressure detection control unit CT detects that the actual pressure difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device is within the preset pressure difference range, the pressure detection control unit CT outputs a normal pressure signal to the coil R5 of the corresponding relay, maintaining the coil R5 of the corresponding relay in the power-off state, and the normally closed contact R5 of the corresponding relay remains in a closed state.

[0126] This example illustrates the case where the intermediate contact of the intermediate relay and the multiple contactors of the contactor are all normally open. Since the normally closed contacts R1-R5 are connected in series, as shown in Figure 8b, when the normally closed contacts R1-R5 are all closed, the coil (S / R) of the intermediate relay is energized. The normally open contacts (S / R contacts) of the intermediate relay are closed, and the coil MC of the contactor is energized. As shown in Figure 8a, the multiple normally open contacts (MC contacts) of the contactor remain closed, and the circuit between the power switch and the load is conductive. The semiconductor process equipment can start normally or continue to operate normally. Figure 8b illustrates the case where all the normally closed contacts R1-R5 are closed, meaning that none of the five units, namely the first leakage detection unit LS1, the second leakage detection unit LS2, the flame detection unit FS, the temperature detection unit TS, and the pressure detection control unit CT, detect any abnormality.

[0127] That is, during the startup or operation of the semiconductor process equipment, the semiconductor protection device needs to simultaneously meet the following five conditions: there is no leakage in the leakage tray 22 and the groove 110, there is no flame on the liquid storage tank 21, the temperature is not greater than the preset temperature, and the actual pressure difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device is within the preset pressure difference range. Only then can it be said that the semiconductor protection device is in a safe state, the power-on circuit can be turned on, and the equipment can be powered on normally or can continue to operate normally.

[0128] Of course, the semiconductor protection device is not limited to satisfying the above five conditions, or may also need to satisfy more other conditions at the same time to operate normally. This is not limited here, and corresponding detection units can be added according to actual conditions.

[0129] The first leakage detection unit LS1 and the second leakage detection unit LS2 have the same detection purpose, which is to detect whether the liquid storage tank 21 is leaking. They are redundant designs. If one of the detection units is damaged, the other can still work normally, thereby improving the reliability and stability of the device.

[0130] In the semiconductor protection device described above, as shown in Figure 10a, all conditions in the first circuit must be normal (i.e., untriggered) for the second circuit to function properly and be in a conductive state. Ultimately, a power-on signal can be supplied, meaning the power-on circuit is closed. As shown in Figure 10b, any triggering of any of the conditions in the first circuit constitutes an abnormal state; the second circuit fails to function properly, i.e., becomes non-conductive; ultimately, no power-on signal can be supplied, meaning the power-on circuit cannot be closed. As shown in Figure 8b, the first circuit comprises the signal receiving circuit consisting of the first leakage detection unit LS1, the second leakage detection unit LS2, the flame detection unit FS, the temperature detection unit TS, and the pressure detection control unit CT, and the corresponding five relay coils. As shown in Figure 8b, the second circuit comprises the feedback circuit consisting of the contacts of the five relays corresponding to the first leakage detection unit LS1, the second leakage detection unit LS2, the flame detection unit FS, the temperature detection unit TS, and the pressure detection control unit CT.

[0131] The semiconductor protection device utilizes a common detection system for multiple conditions, including leakage, flame, temperature, and pressure, and is integrated into the device's power-on circuitry. This system allows for a preliminary safety assessment before powering on the device, enhancing safety. During operation, the device's condition can be monitored in real time. If an anomaly is detected, power can be promptly shut down, halting operation and significantly improving safety. This semiconductor protection device utilizes a single safety protection detection circuit for both safe power-on and real-time detection, saving space and reducing costs. Furthermore, the device utilizes multiple circuits for separate detection of leakage, flame, temperature, and pressure, meeting redundancy requirements. This significantly improves control stability, reduces the risk level of the device, and enhances safety.

[0132] The above-mentioned semiconductor protection device can adopt the following static elimination methods:

[0133] 1. All pipelines in pipeline area A are made of materials that prevent static electricity generation, such as graphene or carbon, to ensure that static electricity will not be generated when flammable and explosive liquids are used in the pipelines.

[0134] 2. Pipeline Area A is equipped with large components such as heaters and pumps. When these components are operating, the pipelines will inevitably vibrate. This vibration will cause friction at the joints connecting the pipelines, which will generate static electricity. To eliminate static electricity generated by vibration, as shown in Figure 11, conductive straps 100 can be used to connect all joints and connect them to the overall frame structure 1. The entire frame is grounded, thus completely eliminating static electricity and ensuring the safety of Pipeline Area A.

[0135] The semiconductor protection device is subjected to three tests: 1. Detection of the difference between the gas pressure value of the electrical area B and the gas pressure value of the external environment of the semiconductor protection device, that is, detection of the positive pressure value of the electrical area B; 2. Detection of the difference between the gas pressure value of the pipeline area A and the gas pressure value of the external environment of the semiconductor protection device, that is, detection of the negative pressure value of the pipeline area A; 3. Temperature detection of the pipeline area A.

[0136] The test data was randomly selected from the same time period of three days. As shown in Figure 12, the three measured data of the positive pressure value of the electrical area B were all between 3.5Pa and 5.5Pa, which is within the preset range of [3Pa, 6Pa]. This shows that the sealing of the electrical area B is good and meets the required standards. As shown in Figure 13, the negative pressure values ​​of the pipeline area A are all stable between -515Pa and -490Pa, with a small fluctuation range, which is better than the preset range of [-520Pa, -480Pa]. This shows that the sealing of the pipeline area A is good and better than the required standards. As shown in Figure 14, the three measured data of the temperature value of the pipeline area A are all stably maintained in the range of 25℃ to 45℃, and none of them exceeds the preset temperature value (70℃), indicating that the device meets the safety requirements. In summary, the above-mentioned semiconductor protection device meets the preset requirements in terms of sealing, safety and stability.

[0137] An embodiment of the present application further provides a semiconductor process equipment, as shown in FIG15 , including a process chamber 200 and the above-mentioned semiconductor protection device 300 , wherein the semiconductor protection device is used to provide process liquid to the process chamber.

[0138] The structure of the semiconductor protection device can be described in the above description and will not be repeated here. The process chamber can be a cleaning chamber for cleaning wafers.

[0139] The semiconductor process equipment has good safety and high reliability.

[0140] An embodiment of the present application also provides a semiconductor process equipment, as shown in Figure 16, the semiconductor process equipment includes: an air inlet, a gas distributor, a reaction chamber, a vacuum system, an exhaust port, and a detection and control device. The air inlet is used to introduce reaction gas and carrier gas into the reaction chamber. The gas distributor is used to evenly distribute the gas entering from the air inlet in the reaction chamber. The gas reacts chemically with the semiconductor material in the reaction chamber to form a thin film or perform other treatments. The reaction chamber is usually equipped with a vacuum system for maintaining the vacuum degree to prevent explosion. The exhaust port is used to discharge the reaction gas and by-products out of the equipment. The detection and control device includes a temperature detection unit TS, a concentration detection unit and a pressure detection unit.

[0141] The chemical liquids or gases used in semiconductor processing equipment also pose flammable and explosive risks. They can spontaneously combust under certain temperatures, concentrations, and pressures, or generate flames and explosions when exposed to sparks or static electricity. Therefore, safety protection circuits are also required.

[0142] The difference between the semiconductor process equipment shown in Figure 16 and the semiconductor process equipment shown in Figure 15 is that the gas reacts chemically with the semiconductor material to form a thin film, which makes it impossible to essentially isolate the gas. The only way is to control the area where the gas is located in multiple directions to prevent it from reaching the conditions for gas combustion or explosion, thereby achieving control and protection of flammable and explosive materials. Therefore, the reaction chamber can be vacuum treated, and at the same time, the temperature, concentration, pressure, gas flow and other parameters in the reaction chamber can be detected and controlled by setting the temperature detection unit TS, concentration detection unit, pressure detection unit and other detection units. The temperature detection unit TS, concentration detection unit, pressure detection unit and other detection units can be connected to the power-on circuit, and by setting relays, intermediate relays and contactors, the power-on circuit is controlled to be disconnected when the temperature, concentration, pressure and other parameters are abnormal; the circuit control structure of this part can refer to the structure shown in Figure 8, Figure 8 uses the first leakage detection unit LS1, the second leakage detection unit LS2, the flame detection unit FS, the temperature detection unit TS and the pressure detection control unit CT, and 5 relays are set respectively; the semiconductor process equipment shown in Figure 16 uses the temperature detection unit TS, the concentration detection unit and the pressure detection unit, and 3 relays are set respectively. The rest of the circuit structure is similar and will not be repeated here.

[0143] The semiconductor process equipment can also use a cooling system to control the temperature so as to achieve a safe environmental condition and realize effective protection.

[0144] It should be noted that the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, commodity, or apparatus that includes a series of elements includes not only those elements but also other elements not explicitly listed, or includes elements inherent to such process, method, commodity, or apparatus. In the absence of further limitations, an element defined by the phrase "comprises a..." does not exclude the presence of other identical elements in the process, method, commodity, or apparatus that includes the element.

[0145] References in this application to "one embodiment," "an embodiment," or "one or more embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of this application. Furthermore, please note that instances of the phrase "in one embodiment" do not necessarily all refer to the same embodiment.

[0146] The foregoing is merely an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application should all be included within the scope of the claims of the present application.

Claims

1. A semiconductor protection device, characterized in that: It includes a frame structure, which includes a frame body and a frame plate; the frame body is used to isolate the external environment of the semiconductor protection device; the frame plate is arranged inside the frame body, and is used to separate the internal space of the frame body into a pipeline area and an electrical area, the electrical area is filled with process gas, and the pipeline area is provided with a liquid storage unit, and the liquid storage unit is used to store process liquid, and the gas pressure value of the pipeline area is less than the gas pressure value of the electrical area.

2. The semiconductor protection device according to claim 1, wherein: The gas pressure value of the pipeline area is lower than the gas pressure value of the external environment of the semiconductor protection device, and the gas pressure value of the electrical area is higher than the gas pressure value of the external environment of the semiconductor protection device.

3. The semiconductor protection device according to claim 2, wherein: The difference between the gas pressure value of the pipeline area and the gas pressure value of the external environment of the semiconductor protection device is in the range of [-520Pa, -480Pa], and the difference between the gas pressure value of the electrical area and the gas pressure value of the external environment of the semiconductor protection device is in the range of [3Pa, 6Pa].

4. The semiconductor protection device according to claim 1, wherein: The frame structure is an integrated frame structure, and the material of the frame body and the material of the frame plate are both explosion-proof materials.

5. The semiconductor protection device according to claim 4, wherein: The liquid storage unit includes a liquid storage tank and a liquid leakage tray, wherein the liquid leakage tray and the liquid storage tank are an integrated structure, and the liquid leakage tray is arranged at the lower end of the liquid storage tank; The pipeline area is further provided with a first liquid leakage detection unit; the first liquid leakage detection unit is arranged on the liquid leakage tray and is used to detect whether there is liquid on the liquid leakage tray.

6. The semiconductor protection device according to claim 5, wherein: The bottom of the frame body is provided with a groove; the groove is arranged opposite to the liquid outlet of the liquid storage tank, and the bottom of the groove is provided with a leakage hole; The pipeline area is further provided with a second liquid leakage detection unit; the second liquid leakage detection unit is arranged in the groove and avoids the leakage hole, and is used to detect whether there is liquid in the groove and output a second liquid leakage detection signal.

7. The semiconductor protection device according to claim 6, wherein: The pipeline area is further provided with a flame detection installation box and a flame detection unit; the flame detection unit is arranged inside the flame detection installation box and is used to detect whether a flame is generated on the liquid storage tank; The flame detection installation box is located above the liquid storage tank and is fixedly arranged on the top of the frame body; the material of the flame detection installation box is explosion-proof material.

8. The semiconductor protection device according to claim 7, wherein: The pipeline area is also provided with a heating unit and a temperature detection unit; the heating unit is used to heat the liquid stored in the liquid storage tank; the temperature detection unit is used to detect whether the temperature at the location of the heating unit is greater than a preset temperature, and the preset temperature is lower than the ignition point of the liquid stored in the liquid storage tank.

9. The semiconductor protection device according to claim 8, wherein: The electrical area is provided with a pressure detection control unit for determining whether the actual pressure difference between the gas pressure value of the electrical area and the gas pressure value of the external environment of the semiconductor protection device is within a preset pressure difference range.

10. The semiconductor protection device according to claim 9, wherein: The semiconductor protection device is applied to semiconductor process equipment, wherein the semiconductor process equipment comprises a power-on circuit and a load, wherein the power-on circuit is used to provide an AC power signal to the load; The electrical area is also provided with a first relay unit, an intermediate relay and a contactor; The first relay unit is used to control the on / off state of the intermediate relay under the control of any combination of the five units of the first leakage detection unit, the second leakage detection unit, the flame detection unit, the temperature detection unit and the pressure detection control unit; The contactor is used to control the power-on circuit to be disconnected when an abnormality is detected in any combination of units under the control of the intermediate relay.

11. The semiconductor protection device according to claim 10, wherein: The semiconductor process equipment further comprises a first power supply and a second power supply; the power-on circuit comprises an AC power supply; The electrical area is further provided with an AC power terminal, a first power terminal and a second power terminal, the AC power terminal is used to receive an AC power signal output by the AC power supply, the first power terminal is used to receive a first power signal output by the first power supply, and the second power terminal is used to receive a second power signal output by the second power supply; The first relay unit includes five relays; the first liquid leakage detection unit, the second liquid leakage detection unit, the flame detection unit, the temperature detection unit, and the pressure detection control unit are electrically connected to the coils of the five relays in a one-to-one correspondence; the coils of the five relays are also electrically connected to the first power supply terminal respectively; The coil of the intermediate relay and the normally closed contacts of the five relays are sequentially connected in series between the second power supply terminal and the first power supply terminal; The coil of the contactor is electrically connected to the intermediate contact of the intermediate relay and the second power supply terminal respectively, and the normally open contact of the intermediate relay is also electrically connected to the first power supply terminal; The power-on circuit also includes the AC power supply end, the power-on switch and the multiple contact contacts of the contactor that are electrically connected in sequence; the multiple contact contacts of the contactor are arranged between the power-on switch and the load; the intermediate contact of the intermediate relay and the multiple contact contacts of the contactor are all normally open contacts or normally closed contacts; the power-on circuit is disconnected when any combination of the five units among the first leakage detection unit, the second leakage detection unit, the flame detection unit, the temperature detection unit and the pressure detection control unit detects an abnormality.

12. A semiconductor process equipment, characterized in that: It comprises a process chamber and the semiconductor protection device according to any one of claims 1 to 11, wherein the semiconductor protection device is used to provide process liquid to the process chamber.

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