Plasma processing device and substrate support

Abstract

A plasma processing device comprises a plasma processing chamber, a stand, a high-frequency power supply, an electrostatic chuck, a joining part, and a conductive layer. The stand is disposed inside the plasma processing chamber. The high-frequency power supply is electrically connected to the stand. The electrostatic chuck is disposed above the stand and includes a suction electrode. The joining part joins the stand and the electrostatic chuck. The conductive layer is disposed between the stand and the suction electrode. A heat transfer gas flow path defined by the stand and the joining part is formed on the upper surface of the stand. The conductive layer has a thickness equal to or greater than the skin depth at the frequency of high-frequency power output by the high-frequency power supply.

Description

Plasma processing apparatus and substrate support stand

[0001] The present disclosure relates to a plasma processing apparatus and a substrate support stage.

[0002] Patent Document 1 listed below discloses a wafer mounting table having a cooling plate with a refrigerant flow path provided on the underside of a ceramic plate having a wafer mounting surface on its upper surface and a built-in electrode, the wafer mounting table being provided with a horizontal space that is parallel to the wafer mounting surface at a position inside the wafer mounting table closer to the wafer mounting surface than the refrigerant flow path and that has an overlapping portion that overlaps with the refrigerant flow path along the refrigerant flow path in a plan view.

[0003] Japanese Patent Application Laid-Open No. 2023-149660

[0004] The present disclosure provides a technique for suppressing the influence of the shape of the bonding surface of the base on the processing results of plasma processing on a substrate.

[0005] A plasma processing apparatus according to one aspect of the present disclosure includes a plasma processing chamber, a base, a radio frequency power supply, an electrostatic chuck, a joint, and a conductive layer. The base is disposed within the plasma processing chamber. The radio frequency power supply is electrically connected to the base. The electrostatic chuck is disposed on top of the base and includes an attraction electrode. The joint joins the base and the electrostatic chuck. The conductive layer is disposed between the base and the attraction electrode. A heat transfer gas flow path is formed on the upper surface of the base, defined by the base and the joint. The conductive layer has a thickness equal to or greater than the skin depth at the frequency of the radio frequency power output by the radio frequency power supply.

[0006] According to the present disclosure, it is possible to suppress the shape of the bonding surface of the base from affecting the processing results of the plasma processing on the substrate.

[0007] FIG. 1 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus according to the first embodiment. FIG. 2 is a cross-sectional view showing an example of a schematic configuration of a main body according to the first embodiment. FIG. 3 is a plan view showing an example of a schematic configuration of a base according to the first embodiment. FIG. 4 is a diagram explaining an example of a flow of high-frequency power in a main body according to a comparative example and a processing result of plasma processing. FIG. 5 is a diagram explaining an example of a flow of high-frequency power in a main body according to the first embodiment and a processing result of plasma processing. FIG. 6 is a plan view showing another example of a schematic configuration of a base according to the first embodiment. FIG. 7 is a plan view showing another example of a schematic configuration of a base according to the first embodiment. FIG. 8 is a cross-sectional view showing an example of a schematic configuration of a main body according to a second embodiment. FIG. 9 is a plan view showing an example of a schematic configuration of an electrostatic chuck according to the second embodiment. FIG. 10 is a diagram explaining an example of a processing result of plasma processing of a main body according to a comparative example. FIG. 11 is a diagram explaining an example of a processing result of plasma processing of a main body according to the second embodiment.

[0008] Hereinafter, embodiments of a plasma processing apparatus and a substrate support pedestal will be described in detail with reference to the drawings. Note that the plasma processing apparatus and the substrate support pedestal disclosed below are not limited to the following embodiments.

[0009] Conventionally, plasma processing apparatuses have been known that perform plasma processing such as plasma etching on substrates such as semiconductor wafers (hereinafter also referred to as "wafers"). In the plasma processing apparatus, a substrate support table on which the substrate is placed is provided inside a vacuum chamber. The substrate support table is configured by joining a conductive base table and an electrostatic chuck that can electrostatically attract the substrate. High-frequency power is supplied to the base table during plasma processing.

[0010] In plasma processing apparatuses, the shape of the bonding surface of the base that bonds with the electrostatic chuck can affect the processing results of plasma processing on a substrate. For example, a substrate support table is configured to be able to supply a heat transfer gas between the base and the electrostatic chuck. For example, the base table has a heat transfer gas flow path formed on its bonding surface that bonds with the electrostatic chuck. This heat transfer gas flow path can cause an electric field bias generated by high-frequency power, and the shape of the flow path can be transferred to the film to be etched on the substrate. For this reason, a technology is needed to prevent the shape of the bonding surface of the base from affecting the processing results of plasma processing on a substrate.

[0011] First Embodiment [Apparatus Configuration] An example of a plasma processing apparatus according to the present disclosure will be described. In the embodiment described below, a plasma processing apparatus according to the present disclosure will be described as an example of a plasma processing system having a system configuration.

[0012] An example of the configuration of a plasma processing system will be described below: Fig. 1 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus according to a first embodiment.

[0013] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support pedestal 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support pedestal 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support pedestal 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support pedestal 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support pedestal 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support table 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. An etching target film to be etched is formed on the upper surface of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode (also referred to as an attraction electrode, chucking electrode, or clamping electrode) 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode. In this embodiment, the electrostatic electrode 1111b corresponds to the chucking electrode of the present disclosure.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 is also configured to supply a heat transfer gas to the gap between the back surface of the substrate W and the central region 111a. The substrate support 11 has a flow path formed in the main body 111 for flowing the heat transfer gas. The configuration of the flow path formed in the main body 111 will be described later.

[0018] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed. That is, one or both of the source RF signal and the bias RF signal may be a pulsed square wave signal.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. The first DC generator 32a is also connected to an electrostatic electrode 1111b and applies a DC signal to the electrostatic electrode 1111b when electrostatically attracting the substrate W using DC power. The first DC generator 32a also applies an AC (Alternating Current) signal to the electrostatic electrode 1111b when electrostatically attracting the substrate W using AC power. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0024] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN). The plasma processing apparatus 1 performs plasma processing under the control of the control unit 2. For example, the plasma processing apparatus 1 performs plasma etching of an etching target film formed on a substrate W under the control of the control unit 2.

[0027] Next, the configuration of the main body 111 according to the first embodiment will be described. Fig. 2 is a cross-sectional view showing an example of a schematic configuration of the main body 111 according to the first embodiment. The main body 111 includes a base 1110 and an electrostatic chuck 1111.

[0028] The electrostatic chuck 1111 has an electrostatic electrode 1111b disposed within a ceramic member 1111a. A first DC generator 32a is connected to the electrostatic electrode 1111b, and a DC signal is applied to the electrostatic electrode 1111b when the substrate W is electrostatically attracted.

[0029] The base 1110 is made of a conductive material. For example, the base 1110 is made of aluminum or MMC (Metal Matrix Composites). MMC is a composite material that combines metal and ceramic reinforcing material. The base 1110 is connected to an RF power supply 31, and high-frequency power such as a source RF signal and a bias RF signal is supplied from the RF power supply 31 during plasma processing. The base 1110 functions as a lower electrode.

[0030] The electrostatic chuck 1111 and the base 1110 are bonded together by an adhesive layer 1112. The electrostatic chuck 1111 is disposed on an upper surface 1110b of the base 1110 and is bonded to the base 1110 by the adhesive layer 1112.

[0031] The substrate W is placed in the central region 111a of the main body 111. The main body 111 is configured to be able to supply a heat transfer gas to the gap between the back surface of the substrate W and the central region 111a. A heat transfer gas flow path for flowing the heat transfer gas is formed in the main body 111. For example, the base 1110 has diffusion flow paths 11101a and 11101b defined as part of the heat transfer gas flow path on the upper surface 1110b, which is the bonding surface to which the electrostatic chuck 1111 is bonded. In this embodiment, the diffusion flow paths 11101a and 11101b correspond to the heat transfer gas flow paths of the present disclosure.

[0032] Fig. 3 is a plan view showing an example of a schematic configuration of the base 1110 according to the first embodiment. Fig. 3 shows an upper surface 1110b of the base 1110. Two annular diffusion channels 11101a and 11101b are concentrically formed on the upper surface 1110b of the base 1110.

[0033] 2, the diffusion channels 11101a and 11101b are formed by forming rectangular recesses in the upper surface 1110b of the base 1110, and the spaces for the channels are formed by covering the tops of the recesses with an adhesive layer 1112. In this way, the main body 111 can easily form the diffusion channels 11101a and 11101b by forming recesses in the upper surface 1110b of the base 1110 and covering the tops of the recesses with an adhesive layer 1112.

[0034] The base 1110 has through-holes (not shown) formed in it that extend from the underside 1110c to the diffusion channels 11101a and 11101b, and a heat transfer gas is supplied to the through-holes. A thermally conductive gas, such as He gas, is preferably used as the heat transfer gas. The heat transfer gas supplied through the through-holes (not shown) flows into the diffusion channels 11101a and 11101b and diffuses within the diffusion channels 11101a and 11101b.

[0035] A plurality of gas holes (not shown) that reach the diffusion channels 11101a and 11101b are formed in the electrostatic chuck 1111 and the adhesive layer 1112, corresponding to the supply positions of the heat transfer gas in the central region 111a. The heat transfer gas in the diffusion channels 11101a and 11101b flows into the respective gas holes (not shown) and is supplied to the central region 111a.

[0036] In the plasma processing apparatus 1, the shape of the upper surface 1110b of the base 1110 that is bonded to the electrostatic chuck 1111 may affect the processing results of the plasma processing on the substrate W. For example, in the plasma processing apparatus 1, the diffusion channels 11101a, 11101b formed on the upper surface 1110b of the base 1110 may cause bias in the electric field generated by high-frequency power, and the shapes of the diffusion channels 11101a, 11101b may be transferred to the film to be etched on the substrate W.

[0037] Therefore, in the plasma processing apparatus 1 according to the first embodiment, the conductive layer 1113 is disposed between the base 1110 of the main body 111 and the electrostatic electrode 1111b. The conductive layer 1113 is disposed on the upper surface of the adhesive layer 1112.

[0038] The conductive layer 1113 is formed of a conductive material. For example, the conductive layer 1113 is a non-magnetic material having a volume resistivity of 1.0×10 -6Ω cm to 1.0 x 10 -4 The conductive layer 1113 is preferably formed from a material having a linear expansion coefficient close to that of the base 1110. In this embodiment, the base 1110 is formed from MMC, and the conductive layer 1113 is formed from aluminum.

[0039] The conductive layer 1113 has a thickness equal to or greater than the skin depth at the frequency of the high frequency power supplied to the base 1110. The skin depth d can be calculated, for example, from the following formula (1).

[0040] d={2 / (σ×ω×μ)} １／２ ...(1) where σ is the electrical conductivity of the conductive layer 1113. ω is the angular frequency of the current, which is the angular velocity of the high frequency power supplied to the base 1110. μ is the absolute magnetic permeability of the conductive layer 1113.

[0041] For example, a non-magnetic material having a volume resistivity of 1.0×10 -6 Ω cm to 1.0 x 10 -4 When the conductive layer 1113 is formed from a material with a resistivity of Ω·cm and the frequency of the high-frequency power supplied to the base 1110 is 100 kHz to 100 MHz, the skin depth d is in the range of 5 μm to 2 mm. The conductive layer 1113 is formed to a thickness equal to or greater than the skin depth d. For example, the conductive layer 1113 is formed to a thickness of 5 μm to 2 mm.

[0042] As described above, in the plasma processing apparatus 1 according to the first embodiment, by providing the conductive layer 1113 between the base 1110 of the main body 111 and the electrostatic electrode 1111b, high-frequency power is uniformly propagated in the in-plane direction to the substrate W via the conductive layer. This makes it possible to prevent the shape of the upper surface 1110b of the base 1110 from affecting the processing results of the plasma processing on the substrate W. For example, it is possible to prevent the shape of the upper surface 1110b of the base 1110 from being transferred to the film to be etched on the substrate W.

[0043] Here, as a comparative example, an example of the flow of high-frequency power in the main body 111 and the processing results of plasma processing when the conductive layer 1113 is not provided will be described. FIG. 4 is a diagram illustrating an example of the flow of high-frequency power in the main body 111 and the processing results of plasma processing according to the comparative example. The main body 111 according to the comparative example does not have the conductive layer 1113. In this case, in the main body 111 according to the comparative example, high-frequency power passes along the shape of the upper surface 1110b of the base 1110 toward the substrate W. FIG. 4 shows an enlarged view of the vicinity of the diffusion channel 11101b of the main body 111. The enlarged view indicates the flow of high-frequency power with arrows. The enlarged view also shows the passage plane L1 through which the high-frequency power passes. For example, in the diffusion channel 11101b, the high-frequency power passes from the bottom surface of the diffusion channel 11101b, and the high-frequency power does not propagate uniformly to the substrate W in the in-plane direction. As a result, the shape of the upper surface 1110b of the base 1110 may affect the processing results of plasma processing on the substrate W. For example, the diffusion channels 11101a and 11101b may cause bias in the electric field generated by the high-frequency power, and the shapes of the diffusion channels 11101a and 11101b may be transferred to the etching target film on the substrate W. Fig. 4 shows an example of the processing result of plasma processing on the etching target film 120 on the substrate W. Annular patterns 121a and 121b are formed in the etching target film 120 on the substrate W in accordance with the shapes of the diffusion channels 11101a and 11101b.

[0044] FIG. 5 is a diagram illustrating an example of the flow of high-frequency power in the main body 111 according to the first embodiment and the processing results of plasma processing. The main body 111 according to the first embodiment includes a conductive layer 1113 between the base 1110 and the electrostatic electrode 1111b. In the main body 111 according to the first embodiment, when high-frequency power passes through the conductive layer 1113, the high-frequency power propagates to the conductive layer 1113 and passes along the shape of the conductive layer 1113 toward the substrate W. That is, the high-frequency power propagates uniformly in the in-plane direction to the substrate W via the conductive layer. FIG. 5 shows an enlarged view of the vicinity of the diffusion channel 11101b of the main body 111. The flow of high-frequency power is indicated by arrows in the enlarged view. The enlarged view also shows the passage plane L2 through which the high-frequency power passes. In the main body 111 according to the first embodiment, for example, the high-frequency power passes from the upper surface of the conductive layer 1113, even in the diffusion channel 11101b portion. As a result, the plasma processing apparatus 1 according to the first embodiment can suppress the shape of the upper surface 1110b of the base 1110 from affecting the processing results of the plasma processing on the substrate W. Fig. 5 shows an example of the processing results of the plasma processing on the etching target film 120 of the substrate W. The main body 111 according to the first embodiment does not transfer the shapes of the diffusion channels 11101a, 11101b to the etching target film 120 of the substrate W. As a result, the plasma processing apparatus 1 according to the first embodiment can suppress a decrease in the yield of semiconductor devices manufactured on the substrate W.

[0045] In the above-described first embodiment, the conductive layer 1113 is provided separately from the adhesive layer 1112. However, this is not limiting. The adhesive layer 1112 may contain a conductive material and function as the conductive layer 1113. That is, the adhesive layer 1112 may be a conductive adhesive layer 1112. Even when the adhesive layer 1112 is configured in this manner, the plasma processing apparatus 1 according to the first embodiment can prevent the shape of the upper surface 1110b of the base 1110 from affecting the processing results of the plasma processing on the substrate W. For example, it can prevent the shape of the upper surface 1110b of the base 1110 from being transferred to the etching target film 120 on the substrate W.

[0046] In the first embodiment, the conductive layer 1113 is provided on the upper surface of the adhesive layer 1112. However, this is not limiting. The conductive layer 1113 may be provided anywhere between the base 1110 and the electrostatic electrode 1111b. FIG. 6 is a plan view showing another example of a schematic configuration of the base 1110 according to the first embodiment. In FIG. 6, two adhesive layers 1112a and 1112b are provided as the adhesive layer 1112 that bonds the base 1110 and the electrostatic chuck 1111, and the conductive layer 1113 is provided between the adhesive layers 1112a and 1112b. FIG. 7 is a plan view showing another example of a schematic configuration of the base 1110 according to the first embodiment. In FIG. 7, the electrostatic chuck 1111 has the conductive layer 1113 provided closer to the base 1110 than the electrostatic electrode 1111b in the ceramic member 1111a. 6 or 7 , the plasma processing apparatus 1 according to the first embodiment can prevent the shape of the upper surface 1110b of the base 1110 from affecting the processing results of the plasma processing on the substrate W. For example, it can prevent the shape of the upper surface 1110b of the base 1110 from being transferred to the etching target film 120 on the substrate W.

[0047] In the first embodiment described above, two diffusion channels 11101a and 11101b are formed in the upper surface 1110b of the base 1110. However, this is not limiting. Only one diffusion channel may be formed, or three or more diffusion channels may be formed. In addition, the first embodiment described above can be applied not only to the central region 111a for supporting the substrate W, but also to the annular region 111b for supporting the ring assembly 112.

[0048] In the first embodiment, two annular diffusion channels 11101a and 11101b are formed concentrically on the upper surface 1110b of the base 1110. However, this is not limitative. The diffusion channels may be formed in any shape.

[0049] The first embodiment has been described above. As described above, the plasma processing apparatus 1 according to the first embodiment includes a plasma processing chamber 10, a base 1110, an RF power supply 31 (high-frequency power supply), an electrostatic chuck 1111, an adhesive layer 1112 (bonding portion), and a conductive layer 1113. The base 1110 is disposed within the plasma processing chamber 10. The RF power supply 31 is electrically connected to the base 1110. The electrostatic chuck 1111 is disposed on top of the base 1110 and includes an electrostatic electrode 1111b (attraction electrode). The adhesive layer 1112 bonds the base 1110 and the electrostatic chuck 1111. The conductive layer 1113 is disposed between the base 1110 and the electrostatic electrode 1111b. Diffusion flow paths 11101a and 11101b (heat transfer gas flow paths) are formed on the upper surface 1110b of the base 1110, and are defined by the base 1110 and the adhesive layer 1112. The conductive layer 1113 has a thickness equal to or greater than the skin depth at the frequency of the high-frequency power output by the RF power supply 31. This allows the plasma processing apparatus 1 to suppress the effect of the shape of the upper surface 1110b of the base 1110, which is the bonding surface to which the electrostatic chuck 1111 is bonded, on the processing results of the plasma processing on the substrate W.

[0050] The adhesive layer 1112 may also contain a conductive material and function as the conductive layer 1113. This allows the plasma processing apparatus 1 to bond the base 1110 and the electrostatic chuck 1111 together using the adhesive layer 1112 while suppressing any influence on the processing results of the plasma processing on the substrate W.

[0051] The conductive layer 1113 may be disposed inside the electrostatic chuck 1111. This allows the plasma processing apparatus 1 to suppress any influence on the processing results of the plasma processing on the substrate W.

[0052] The adhesive layer 1112 may also include an adhesive layer 1112b (first adhesive layer) and an adhesive layer 1112a (second adhesive layer) disposed below the first adhesive layer. The conductive layer 1113 is disposed between the adhesive layer 1112b and the adhesive layer 1112a. This allows the plasma processing apparatus 1 to suppress any influence on the processing results of the plasma processing on the substrate W.

[0053] The conductive layer 1113 is a non-magnetic material and has a volume resistivity of 1.0×10 -6 Ω cm to 1.0 x 10 -4 The conductive layer 1113 is made of a material with a resistivity of Ω·cm. The thickness of the conductive layer 1113 is 5 μm to 2 mm. The frequency of the high-frequency power is in the range of 100 kHz to 100 MHz. This allows the plasma processing apparatus 1 to suppress any influence on the processing results of the plasma processing on the substrate W.

[0054] The diffusion channels 11101a and 11101b are defined by a recess formed in the upper surface 1110b of the base 1110 and an adhesive layer 1112 covering the recess. This allows the plasma processing apparatus 1 to easily form the diffusion channels 11101a and 11101b on the upper surface 1110b of the base 1110.

[0055] The base 1110 may be made of MMC, and the conductive layer 1113 may be made of aluminum. In this case, since the linear expansion coefficients of the MMC and the electrostatic chuck 1111 are similar, the plasma processing apparatus 1 can suppress misalignment and cracks between the base 1110 and the conductive layer 1113 due to temperature changes.

[0056] Second Embodiment Next, a second embodiment will be described. The configuration of the plasma processing system according to the second embodiment is similar to the configuration of the plasma processing system according to the first embodiment shown in FIG. 1, and therefore, a description thereof will be omitted.

[0057] The configuration of the main body 111 according to the second embodiment will be described. Fig. 8 is a cross-sectional view showing an example of a schematic configuration of the main body 111 according to the second embodiment. The main body 111 according to the second embodiment has a configuration that is partially identical to that of the main body 111 according to the first embodiment shown in Fig. 8, and therefore, the same parts will be assigned the same reference numerals and descriptions thereof will be omitted, and differences will mainly be described.

[0058] The main body 111 according to the second embodiment is configured to be able to supply a heat transfer gas to the gap between the back surface of the substrate W and the central region 111a. A flow path for flowing the heat transfer gas is formed in the main body 111. For example, the base 1110 has diffusion flow paths 11101a and 11101b formed as part of the heat transfer gas flow path on the upper surface 1110b, which is the bonding surface to which the electrostatic chuck 1111 is bonded.

[0059] The main body 111 according to the second embodiment has dots (not shown) formed in the central region 111a to support the substrate W. Furthermore, the main body 111 according to the second embodiment has annular intermediate seal bands 130a and 130b provided in the central region 111a. Furthermore, the main body 111 according to the second embodiment has an annular peripheral seal band 131 provided in the central region 111a along the outer periphery of the substrate W. The intermediate seal bands 130a and 130b, the peripheral seal band 131, and the dots (not shown) are formed to the same height. The intermediate seal band is a seal band other than the peripheral seal band 131 arranged in the central region 111a.

[0060] Fig. 9 is a plan view showing an example of a schematic configuration of an electrostatic chuck 1111 according to the second embodiment. Fig. 9 shows a central region 111a of the electrostatic chuck 1111. In the electrostatic chuck 1111, two intermediate seal bands 130a and 130b and an outer peripheral seal band 131 are concentrically formed in the central region 111a.

[0061] As shown in Figure 8, the main body 111 according to the second embodiment supports the substrate W using intermediate seal bands 130a and 130b, an outer periphery seal band 131, and dots (not shown) provided in the central region 111a. Spaces 132a to 132c are formed between the substrate W and the central region 111a. Heat transfer gas supplied to the central region 111a accumulates in the spaces 132a to 132c. The intermediate seal band 130a separates the space 132a from the space 132b, preventing the heat transfer gas in the space 132a from flowing into the space 132b. The intermediate seal band 130b separates the space 132b from the space 132c, preventing the heat transfer gas in the space 132b from flowing into the space 132c. The outer periphery seal band 131 separates the space 132c from the space on the outer periphery of the substrate W, preventing the heat transfer gas in the space 132c from flowing toward the outer periphery of the substrate W.

[0062] In the plasma processing apparatus 1, the thermal resistance to the substrate W differs between the contact areas of the intermediate seal bands 130a, 130b, the outer seal band 131, the dots (not shown), and the spaces 132a-132c to which the heat transfer gas is supplied. For example, the contact areas have a lower thermal resistance than the spaces 132a-132c. This may result in temperature differences within the surface of the substrate W, which may affect the results of plasma processing on the substrate W. In particular, the intermediate seal bands 130a, 130b contact the substrate W at its central portion and have a large contact area. Therefore, in the plasma processing apparatus 1, the temperature of the contact areas with the intermediate seal bands 130a, 130b within the surface of the substrate W decreases, which may result in the shape of the intermediate seal bands 130a, 130b being transferred to the film to be etched on the substrate W.

[0063] Therefore, in the plasma processing apparatus 1 according to the second embodiment, the diffusion channels 11101a and 11101b are arranged to match the arrangement of the intermediate seal bands 130a and 130b. For example, in the main body 111 according to the second embodiment, the diffusion channels 11101a and 11101b are formed on the upper surface 1110b of the base 1110, below the intermediate seal bands 130a and 130b. For example, in the main body 111, the diffusion channel 11101a is formed directly below the intermediate seal band 130a on the upper surface 1110b of the base 1110, and the diffusion channel 11101b is formed directly below the intermediate seal band 130b on the upper surface 1110b of the base 1110. The thermal resistance of the intermediate seal bands 130a and 130b in the central region 111a of the main body 111 varies depending on the width and depth of the diffusion channels 11101a and 11101b. The diffusion flow path 11101a is formed with a width and depth such that the thermal resistance of the intermediate seal band 130a portion of the central region 111a is equal to the thermal resistance of the spaces 132a to 132c portion of the central region 111a. The diffusion flow path 11101b is formed with a width and depth such that the thermal resistance of the intermediate seal band 130b portion of the central region 111a is equal to the thermal resistance of the spaces 132a to 132c portion of the central region 111a.

[0064] As a result, in the plasma processing apparatus 1 according to the second embodiment, it is possible to suppress temperature differences within the surface of the substrate W, thereby suppressing any influence on the processing results of the plasma processing on the substrate W.

[0065] A comparative example will now be described. FIG. 10 is a diagram illustrating an example of the processing results of plasma processing on a main body 111 according to the comparative example. The main body 111 according to the comparative example has diffusion channels 11101a and 11101b formed in a base 1110 below a channel 1110a through which a heat transfer fluid flows. In this case, in the plasma processing apparatus 1, the thermal resistance to the substrate W differs between contact portions such as the intermediate seal bands 130a and 130b and the spaces 132a to 132c to which the heat transfer gas is supplied. In the main body 111 according to the comparative example, the thermal resistance of the intermediate seal bands 130a and 130b in the central region 111a is lower than the thermal resistance of the spaces 132a to 132c. FIG. 10 shows an enlarged view of the vicinity of the intermediate seal band 130b of the main body 111. In the enlarged view, the thermal resistance of the intermediate seal band 130b in the central region 111a of the main body 111 is expressed as thermal resistance R ＳＢ and the thermal resistance of the spaces 132b and 132c in the central region 111a of the main body 111 is represented as the thermal resistance R Ｈｅ In the main body 111 according to the comparative example, the intermediate seal band 130b is in contact with the substrate W, and therefore the thermal resistance R ＳＢ <Thermal resistance R Ｈｅ This causes a temperature difference within the surface of the substrate W, which may affect the processing results of the plasma processing on the substrate W. For example, in the plasma processing apparatus 1 according to the comparative example, the temperature of the contact portions of the surface of the substrate W with the intermediate seal bands 130a, 130b decreases, and the shapes of the intermediate seal bands 130a, 130b may be transferred to the etching target film 120 of the substrate W. FIG. 10 shows an example of the processing results of the plasma processing on the etching target film 120 of the substrate W. Rings 122a, 122b are formed on the etching target film 120 of the substrate W in accordance with the shapes of the intermediate seal bands 130a, 130b.

[0066] FIG. 11 is a diagram illustrating an example of the results of plasma processing of the main body 111 according to the second embodiment. The main body 111 according to the first embodiment has diffusion channels 11101a and 11101b formed at positions below the intermediate seal bands 130a and 130b on the upper surface 1110b of the base 1110. The diffusion channel 11101a is formed with a width and depth such that the thermal resistance of the intermediate seal band 130a is equal to the thermal resistance of the spaces 132a to 132c. The diffusion channel 11101b is formed with a width and depth such that the thermal resistance of the intermediate seal band 130b is equal to the thermal resistance of the spaces 132a to 132c. FIG. 11 shows an enlarged view of the main body 111 near the intermediate seal band 130b. The enlarged view shows the thermal resistance R of the intermediate seal band 130b in the central region 111a of the main body 111. ＳＢ and the thermal resistance R of the spaces 132b and 132c in the central region 111a of the main body 111. Ｈｅ The main body 111 according to the second embodiment has a thermal resistance R ＳＢ ≒Thermal resistance R Ｈｅ As a result, the main body 111 according to the second embodiment can suppress temperature differences within the surface of the substrate W, thereby suppressing any influence on the processing results of the plasma processing on the substrate W. As a result, the plasma processing apparatus 1 according to the second embodiment can suppress a decrease in the yield of semiconductor devices manufactured on the substrate W.

[0067] In the second embodiment described above, the diffusion channels 11101a and 11101b are formed in the upper surface 1110b of the base 1110. However, this is not limiting. The diffusion channels 11101a and 11101b may be formed above the channel 1110a through which the heat transfer fluid flows within the base 1110. Furthermore, the second embodiment described above can be applied not only to the central region 111a for supporting the substrate W, but also to the annular region 111b for supporting the ring assembly 112.

[0068] Furthermore, in the main body 111 according to the second embodiment, similarly to the first embodiment, a conductive layer 1113 may be disposed between the base 1110 of the main body 111 and the electrostatic electrode 1111b. Furthermore, the adhesive layer 1112 may contain a conductive material and function as the conductive layer 1113.

[0069] The second embodiment has been described above. As described above, the plasma processing apparatus 1 according to the second embodiment includes a plasma processing chamber 10, a base 1110, an RF power supply 31 (high-frequency power supply), an electrostatic chuck 1111, and an adhesive layer 1112 (bonding portion). The base 1110 is disposed within the plasma processing chamber 10. The RF power supply 31 is electrically connected to the base 1110. The electrostatic chuck 1111 is disposed on top of the base 1110 and includes an electrostatic electrode 1111b (attraction electrode). The adhesive layer 1112 (bonding portion) bonds the base 1110 and the electrostatic chuck 1111. Annular intermediate seal bands 130a, 130b are formed in the central region 111a (upper surface) of the electrostatic chuck 1111. In the central region 111a of the base 1110, below the intermediate seal bands 130a, 130b, diffusion flow paths 11101a, 11101b (heat transfer gas flow paths) are formed by the base 1110 and the adhesive layer 1112. This makes it possible to prevent temperature differences from occurring within the surface of the substrate W in the plasma processing apparatus 1, thereby preventing the results of the plasma processing on the substrate W from being affected.

[0070] Furthermore, the base 1110 has diffusion channels 11101a and 11101b formed directly below the intermediate seal bands 130a and 130b. The electrostatic chuck 1111 supports the substrate with the intermediate seal bands 130a and 130b, and a heat transfer gas is supplied to spaces 132a to 132c formed on the upper surface by the intermediate seal bands 130a and 130b and the substrate W. The diffusion channels 11101a and 11101b are formed with a width and depth such that the thermal resistance of the intermediate seal bands 130a and 130b is equal to the thermal resistance of the spaces 132a to 132c. This prevents temperature differences from occurring within the surface of the substrate W in the plasma processing apparatus 1, thereby preventing them from affecting the results of plasma processing on the substrate W.

[0071] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0072] In the above-described embodiment, a capacitively coupled plasma (CCP) is used as an example of the plasma source. However, the disclosed technology is not limited to this. For example, an inductively coupled plasma (ICP), a microwave-excited surface wave plasma (SWP), an electron cyclotron resonance plasma (ECP), or a helicon wave-excited plasma (HWP) may be used as the plasma source.

[0073] In the above embodiment, the plasma processing performed on the substrate W is a plasma processing such as plasma etching, but the present invention is not limited to this. The plasma processing may be any processing using plasma. For example, the plasma processing may be a film formation process, a modification process, or a heat treatment such as ashing.

[0074] Furthermore, the following supplementary notes are disclosed regarding the above-described embodiment.

[0075] (Supplementary Note 1) A plasma processing apparatus comprising: a plasma processing chamber; a base disposed within the plasma processing chamber; a radio frequency power supply electrically connected to the base; an electrostatic chuck disposed on an upper portion of the base and including an attraction electrode; a joint joining the base and the electrostatic chuck; and a conductive layer disposed between the base and the attraction electrode, wherein a heat transfer gas flow path defined by the base and the joint is formed on an upper surface of the base, and the conductive layer has a thickness equal to or greater than a skin depth at a frequency of radio frequency power output by the radio frequency power supply.

[0076] (Supplementary Note 2) The plasma processing apparatus according to Supplementary Note 1, wherein the bonding portion includes a conductive material and functions as the conductive layer.

[0077] (Supplementary Note 3) The plasma processing apparatus according to Supplementary Note 1, wherein the conductive layer is disposed within the electrostatic chuck.

[0078] (Supplementary Note 4) The plasma processing apparatus according to Supplementary Note 1, wherein the bonding portion includes a first bonding layer and a second bonding layer disposed below the first bonding layer, and the conductive layer is disposed between the first bonding layer and the second bonding layer.

[0079] (Note 5) The conductive layer is a non-magnetic material and has a volume resistivity of 1.0×10 -6 Ω cm to 1.0 x 10 -4 5. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is made of a material with a resistivity of Ω·cm.

[0080] (Supplementary Note 6) The plasma processing apparatus according to Supplementary Note 5, wherein the conductive layer has a thickness in the range of 5 μm to 2 mm.

[0081] (Supplementary Note 7) The plasma processing apparatus according to any one of Supplementary Notes 1 to 6, wherein the high frequency is in a range of 100 kHz to 100 MHz.

[0082] (Supplementary Note 8) The plasma processing apparatus according to any one of Supplementary Notes 1 to 7, wherein the heat transfer gas flow path is defined by a recess formed in an upper surface of a base and the joint portion covering the recess.

[0083] (Supplementary Note 9) The plasma processing apparatus according to any one of Supplementary Notes 1 to 8, wherein the base is made of MMC (Metal Matrix Composites), and the conductive layer is made of aluminum.

[0084] (Supplementary Note 10) A substrate support table comprising: a base placed in a plasma processing chamber; an electrostatic chuck placed on top of the base and including an attraction electrode; a joint joining the base and the electrostatic chuck; and a conductive layer placed between the base and the attraction electrode, wherein a heat transfer gas flow path defined by the base and the joint is formed on an upper surface of the base, and the conductive layer has a thickness equal to or greater than a skin depth at a frequency of a high frequency supplied to the base during plasma processing.

[0085] (Supplementary Note 11) The substrate support table according to Supplementary Note 10, wherein the bonding portion includes a conductive material and functions as the conductive layer.

[0086] (Supplementary Note 12) The substrate support table according to Supplementary Note 10, wherein the conductive layer is disposed within the electrostatic chuck.

[0087] (Supplementary Note 13) The substrate support table according to Supplementary Note 10, wherein the bonding portion includes a first bonding layer and a second bonding layer disposed below the first bonding layer, and the conductive layer is disposed between the first bonding layer and the second bonding layer.

[0088] (Note 14) The conductive layer is a non-magnetic material and has a volume resistivity of 1.0×10 -6 Ω cm to 1.0 x 10 -4 14. The substrate support according to any one of claims 10 to 13, wherein the substrate support is made of a material having a resistivity of Ω·cm.

[0089] (Appendix 15) The substrate support according to Appendix 14, wherein the conductive layer has a thickness in the range of 5 μm to 2 mm.

[0090] (Supplementary Note 16) The substrate support table according to any one of Supplementary Notes 10 to 15, wherein the high frequency wave has a frequency in the range of 100 kHz to 100 MHz.

[0091] (Supplementary Note 17) The substrate support table according to any one of Supplementary Notes 10 to 16, wherein the heat transfer gas flow path is defined by a recess formed in the upper surface of the base and the joint portion covering the recess.

[0092] (Supplementary Note 18) The substrate support according to any one of Supplementary Notes 10 to 17, wherein the base is made of MMC (Metal Matrix Composites), and the conductive layer is made of aluminum.

[0093] (Supplementary Note 19) A plasma processing apparatus comprising: a plasma processing chamber; a base disposed within the plasma processing chamber; a high-frequency power supply electrically connected to the base; an electrostatic chuck disposed on an upper portion of the base and including an attraction electrode; and a joint portion joining the base and the electrostatic chuck, wherein an annular intermediate seal band and / or an outer peripheral seal band are formed on an upper surface of the electrostatic chuck, and a heat transfer gas flow path defined by the base and the joint portion is formed on the upper surface of the base below the intermediate seal band and / or the outer peripheral seal band.

[0094] (Supplementary Note 20) The plasma processing apparatus according to Supplementary Note 19, wherein the heat transfer gas flow path is formed in the base at a position directly below the intermediate seal band and / or the outer circumferential seal band.

[0095] (Appendix 21) A plasma processing apparatus according to appendix 19 or 20, wherein the electrostatic chuck supports a substrate by the intermediate seal band and / or the outer seal band, a heat transfer gas is supplied to a space formed on the upper surface by the intermediate seal band and / or the outer seal band and the substrate, and the heat transfer gas flow path is formed with a width and depth such that the thermal resistance of the intermediate seal band portion and / or the outer seal band portion is equal to the thermal resistance of the space portion.

[0096] (Supplementary Note 22) A substrate support table comprising: a base placed within the plasma processing chamber; an electrostatic chuck placed on top of the base and including an attraction electrode; and a joint joining the base and the electrostatic chuck, wherein an annular intermediate seal band and / or an outer peripheral seal band are formed on an upper surface of the electrostatic chuck, and a heat transfer gas flow path defined by the base and the joint is formed on the upper surface of the base below the intermediate seal band and / or the outer peripheral seal band.

[0097] (Supplementary Note 23) The substrate support table according to Supplementary Note 22, wherein the heat transfer gas flow path is formed in the base table at a position directly below the intermediate seal band and / or the outer circumferential seal band.

[0098] (Appendix 24) The electrostatic chuck supports a substrate by the intermediate seal band and / or the outer seal band, and a heat transfer gas is supplied to a space formed on the upper surface by the intermediate seal band and / or the outer seal band and the substrate, and the heat transfer gas flow path is formed with a width and depth such that the thermal resistance of the intermediate seal band portion and / or the outer seal band portion is equal to the thermal resistance of the space portion. A substrate support table as described in Appendix 22 or 23.

[0099] 1 Plasma processing apparatus 10 Plasma processing chamber 11 Substrate support 30 Power supply 31 RF power supply 31a First RF generating unit 31b Second RF generating unit 32 DC power supply 32a First DC generating unit 32b Second DC generating unit 40 Exhaust system 111 Main body 111a Central region 111b Annular region 112 Ring assembly 120 Film to be etched 130a, 130b Intermediate seal band 131 Peripheral seal band 132a, 132b, 132c Space 1110 Base 1110a Flow path 1110b Upper surface 1110c Lower surface 1111 Electrostatic chuck 1111a Ceramic member 1111b Electrostatic electrode 1112, 1112a, 1112b Adhesion layer 1113 Conductive layer 11101a, 11101b Diffusion channel W Substrate

Claims

1. A plasma processing apparatus comprising: a plasma processing chamber; a base disposed within the plasma processing chamber; a radio frequency power supply electrically connected to the base; an electrostatic chuck disposed on top of the base and including an attraction electrode; a joint joining the base and the electrostatic chuck; and a conductive layer disposed between the base and the attraction electrode, wherein a heat transfer gas flow path defined by the base and the joint is formed on an upper surface of the base, and the conductive layer has a thickness equal to or greater than the skin depth at the frequency of the radio frequency power output by the radio frequency power supply.

2. The plasma processing apparatus according to claim 1, wherein the bonding portion includes a conductive material and functions as the conductive layer.

3. The plasma processing apparatus according to claim 1, wherein the conductive layer is disposed within the electrostatic chuck.

4. The plasma processing apparatus according to claim 1, wherein the bonding portion includes a first bonding layer and a second bonding layer disposed below the first bonding layer, and the conductive layer is disposed between the first bonding layer and the second bonding layer.

5. The conductive layer is a non-magnetic material and has a volume resistivity of 1.0×10 -6 Ω cm to 1.0 x 10 -4 The plasma processing apparatus according to claim 1 , wherein the plasma processing apparatus is made of a material with a resistivity of Ω·cm.

6. The plasma processing apparatus according to claim 5, wherein the conductive layer has a thickness of 5 μm to 2 mm.

7. The plasma processing apparatus according to claim 1, wherein the frequency of the high frequency power is in the range of 100 kHz to 100 MHz.

8. The plasma processing apparatus according to claim 1, wherein the heat transfer gas flow path is defined by a recess formed in the upper surface of the base and the joint portion covering the recess.

9. The plasma processing apparatus according to claim 1, wherein the base is made of MMC (Metal Matrix Composites), and the conductive layer is made of aluminum.

10. A substrate support comprising: a base placed within a plasma processing chamber; an electrostatic chuck placed on top of the base and including an adsorption electrode; a joint joining the base and the electrostatic chuck; and a conductive layer placed between the base and the adsorption electrode, wherein a heat transfer gas flow path defined by the base and the joint is formed on the upper surface of the base, and the conductive layer has a thickness equal to or greater than the skin depth at the frequency of the high frequency supplied to the base during plasma processing.

11. The substrate support according to claim 10, wherein the bonding portion includes a conductive material and functions as the conductive layer.

12. The substrate support pedestal according to claim 10, wherein the conductive layer is disposed within the electrostatic chuck.

13. The substrate support table according to claim 10, wherein the bonding portion includes a first bonding layer and a second bonding layer disposed below the first bonding layer, and the conductive layer is disposed between the first bonding layer and the second bonding layer.

14. The conductive layer is a non-magnetic material and has a volume resistivity of 1.0×10 -6 Ω cm to 1.0 x 10 -4 The substrate support table according to claim 10 , which is made of a material with a resistance of Ω·cm.

15. The substrate support according to claim 14, wherein the conductive layer has a thickness of 5 μm to 2 mm.

16. The substrate support table according to claim 10, wherein the frequency of the high frequency power is in the range of 100 kHz to 100 MHz.

17. The substrate support table according to claim 10, wherein the heat transfer gas flow path is defined by a recess formed in the upper surface of the base and the joint portion covering the recess.

18. The base is made of MMC (Metal Matrix Composites) and the conductive layer is made of aluminum. The substrate support pedestal of claim 10 .

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