Light detection device

Abstract

This light detection device comprises a first chip and a second chip that are laminated so as to be electrically connected to each other, a pixel array unit that is provided to the first chip and includes a plurality of pixels each including a photoelectric conversion unit, and a circuit unit that is provided to the second chip and is electrically connected to the pixel array unit of the first chip. The plurality of pixels include imaging pixels that detect visible light, and distance measurement pixels that detect distance measurement light. The pixel array unit includes an imaging pixel array unit that includes the plurality of imaging pixels arranged in at least a row direction, and a distance measurement pixel array unit that includes a plurality of distance measurement pixels arranged in at least the row direction. The circuit unit includes an imaging circuit unit that is electrically connected to the imaging pixel array unit, and a distance measurement circuit unit that is electrically connected to the distance measurement pixel array unit.

Description

Photodetector

[0001] The present disclosure relates to a light detection device.

[0002] 2. Description of the Related Art Light detection devices such as imaging devices and distance measuring devices include pixels each including a photoelectric conversion unit.

[0003] Japanese Patent Application Publication No. 2019-33181 WO 2020 / 137754 JP 2018-512573 WO 2021 / 166542 JP 2021-153198 JP 2022-000968 JP 2020-141146 JP 2023-88476 JP 2022-128450 JP Table 2023-543709 International Publication No. 2020 / 149173 JP 2021-176206 A JP 2017-055241 A JP 2019-169962 A International Publication No. 2022 / 269982 JP 2020-174157 A JP 2017-59655 A International Publication No. 2022 / 239459

[0004] The photoelectric conversion unit is formed on a semiconductor chip. There is still room for further study on the chip configuration of a photodetector that has both imaging and distance measurement functions.

[0005] One aspect of the present disclosure provides a photodetector device having a chip configuration capable of imaging and ranging.

[0006] An optical detection device according to one aspect of the present disclosure comprises a first chip and a second chip stacked so as to be electrically connected to each other, a pixel array section provided on the first chip and including a plurality of pixels each including a photoelectric conversion section, and a circuit section provided on the second chip and electrically connected to the pixel array section of the first chip, wherein the plurality of pixels include imaging pixels that detect visible light and ranging pixels that detect ranging light, the pixel array section including an imaging pixel array section including at least a plurality of imaging pixels arranged in a column direction, and a ranging pixel array section including at least a plurality of ranging pixels arranged in the column direction, and the circuit section includes an imaging circuit section electrically connected to the imaging pixel array section, and a ranging circuit section electrically connected to the ranging pixel array section.

[0007] An optical detection device according to one aspect of the present disclosure includes an imaging chip provided with imaging pixels that detect visible light, a ranging chip provided with ranging pixels that detect ranging light, and an optical system that guides visible light from the detection area to the imaging chip and guides ranging light to the ranging chip.

[0008] 1 is a diagram illustrating an example of a schematic configuration of a photodetector 100 according to an embodiment. FIG. 1 is a diagram illustrating an example of a schematic configuration of the photodetector 100. FIG. 2 is a diagram illustrating an example of a circuit. FIG. 3 is a diagram illustrating an example of a circuit. FIG. 4 is a diagram illustrating an example of a schematic configuration of the photodetector 100. FIG. 5 is a diagram illustrating an example of a floor plan. FIG. 6 is a diagram illustrating an example of a floor plan. FIG. 7 is a diagram illustrating an example of a floor plan. FIG. 8 is a diagram illustrating an example of a floor plan. FIG. 9 is a diagram illustrating an example of a floor plan. FIG. 10 is a diagram illustrating an example of a floor plan. FIG. 11 is a diagram illustrating an example of a floor plan. FIG. 12 is a diagram illustrating an example of a floor plan. FIG. 13 is a diagram illustrating an example of a WoW (Wafer-on-Wafer) configuration. FIG. 14 is a diagram illustrating an example of a CoW (Chip-on-Wafer) configuration. FIG. 15 is a diagram illustrating an example of a schematic configuration of the photodetector 100. FIG. 16 is a diagram illustrating an example of a schematic configuration of the photodetector 100. FIG. 17 is a diagram illustrating an example of a schematic configuration of the photodetector 100. FIG. 18 is a diagram illustrating an example of a schematic configuration of the photodetector 100. FIG. 19 is a diagram illustrating an example of a schematic configuration of the photodetector 100. FIG. 19 is a diagram illustrating an example of a schematic configuration of the photodetector 100. 1 is a diagram showing an example of correction by the correction circuit 521. A diagram schematically showing a fusion algorithm. A diagram showing an example of selection of distance candidate values. A diagram showing an example of selection of distance candidate values. A diagram showing an example of flicker suppression processing. A diagram showing an example of a schematic configuration of the light detection device 100. A diagram showing an example of a schematic configuration of the light detection device 100. A diagram showing an example of a schematic configuration of the light detection device 100. A diagram showing an example of the characteristics of a cut filter 14. A diagram showing an example of a schematic configuration of the light detection device 100. A diagram showing an example of a schematic configuration of the light detection device 100. A diagram showing an example of a schematic configuration of the light detection device 100. A diagram showing an example of a schematic configuration of the light detection device 100. A diagram showing an example of a schematic configuration of the light detection device 100. A diagram showing an example of a schematic configuration of the light detection device 100. A diagram showing an example of a schematic configuration of the light detection device 100. A diagram showing an example of a schematic configuration of the light detection device 100. A diagram showing an example of a schematic configuration of the light detection pixel 3d-ZAF. A diagram showing an example of a schematic configuration of the light detection pixel 3d-ZAF. A diagram showing an example of ranging. A diagram showing an example of ranging. A diagram showing an example of ranging. 1 is a diagram showing an example of a schematic configuration of a light detection device 100. FIG. 2 is a diagram showing an example of a schematic configuration of a ranging pixel 3d-ZAF.1 is a diagram showing an example of a schematic configuration of ranging pixels 3d-ZAF. FIG. 2 is a diagram showing an example of a combination of ranging techniques. FIG. 3 is a diagram showing an example of a combination of ranging techniques. FIG. 4 is a diagram showing an example of reducing the sensitivity of ranging pixels 3d. FIG. 5 is a diagram showing an example of reducing the sensitivity of ranging pixels 3d. FIG. 6 is a diagram showing an example of reducing the sensitivity of ranging pixels 3d. FIG. 7 is a diagram showing an example of reducing the sensitivity of ranging pixels 3d. FIG. 8 is a diagram showing an example of reducing the sensitivity of ranging pixels 3d. FIG. 9 is a diagram showing an example of reducing the sensitivity of ranging pixels 3d. FIG. 10 is a diagram showing an example of reducing the sensitivity of ranging pixels 3d. FIG. 11 is a diagram showing an example of reducing the sensitivity of ranging pixels 3d. FIG. 12 is a diagram showing an example of reducing the sensitivity of ranging pixels 3d. 1 is a diagram showing an example of an arrangement of imaging pixels 3p-OPB. FIG. 1 is a diagram showing an example of an arrangement of imaging pixels 3p-OPB. FIG. 2 is a diagram showing an example of sensitivity adjustment. FIG. 3 is a diagram showing an example of a pixel array. FIG. 4 is a diagram showing an example of a pixel array. FIG. 5 is a diagram showing an example of a color centroid. FIG. 6 is a diagram showing an example of a color centroid. FIG. 7 is a diagram showing an example of a detection area A. FIG. 8 is a diagram showing an example of signal acquisition at different sensitivities. FIG. 9 is a diagram showing an example of a process (imaging method) executed in the photodetection device 100. FIG. 10 is a diagram showing an example of a process (imaging method) executed in the photodetection device 100. FIG. 11 is a diagram showing an example of an exposure time in a one-dimensional scanner method. FIG. 12 is a diagram showing an example of a schematic configuration of ranging pixels 3d and ranging circuit unit 5d. FIG. 13 is a diagram showing an example of a signal transfer within the memory unit 55. FIG. 14 is a diagram showing an example of a schematic configuration of ranging pixels 3d and ranging circuit unit 5d. FIG. 15 is a diagram showing an example of a schematic configuration of ranging pixels 3d and ranging circuit unit 5d. FIG. 16 is a diagram showing an example of a schematic configuration of ranging pixels 3d and ranging circuit unit 5d. FIG. 17 is a diagram showing an example of a schematic configuration of ranging pixels 3d and ranging circuit unit 5d. FIG. 1 is a diagram illustrating an example of signal addition; FIG. 2 is a diagram illustrating an example of signal addition; FIG. 3 is a diagram illustrating an example of a configuration of signal addition; FIG. 4 is a diagram illustrating an example of a configuration of signal addition; FIG. 5 is a diagram illustrating an example of TDI operation; FIG. 6 is a diagram illustrating an example of TDI operation; FIG. 7 is a diagram illustrating an example of a one-dimensional scanner.FIG. 1 is a diagram illustrating an example of a one-dimensional scanner. FIG. 2 is a diagram illustrating an example of a one-dimensional scanner. FIG. 3 is a diagram illustrating an example of a one-dimensional scanner. FIG. 4 is a diagram illustrating an example of a one-dimensional scanner. FIG. 5 is a diagram illustrating an example of a one-dimensional scanner. FIG. 6 is a diagram illustrating an example of a schematic configuration of a light detection device 100. FIG. 7 is a block diagram illustrating an example of a schematic configuration of a vehicle control system. FIG. 8 is an explanatory diagram illustrating an example of installation positions of an outside-vehicle information detection unit and an imaging unit.

[0009] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the following embodiments, the same elements are designated by the same reference numerals, and redundant description will be omitted.

[0010] The present disclosure will be described in the following order: 1. Embodiment 2. Summary 3. Application Examples 3.1 Application Examples to Mobile Objects 3.2 Other Application Examples

[0011] 1. Embodiment Fig. 1 is a diagram showing an example of the schematic configuration of a photodetector 100 according to an embodiment. The photodetector 100 has both imaging and distance measurement functions. The photodetector 100 includes multiple chips (semiconductor chips), two chips in this example. The first chip is referred to as chip 1 and illustrated. The second chip is referred to as chip 2 and illustrated. When there is no particular distinction between them, they are also simply referred to as chips.

[0012] Chip 1 and chip 2 are stacked so as to be electrically connected to each other. An XYZ coordinate system is also shown. The X-axis direction and Y-axis direction (XY plane direction) correspond to the surface directions of the chips. The X-axis direction is also called the horizontal direction. The Y-axis direction is also called the vertical direction. The Z-axis direction corresponds to the thickness direction of the chips (stacking direction). The positive Z-axis direction is also called the upward direction. The negative Z-axis direction is also called the downward direction.

[0013] 1, chip 2 and chip 1 are stacked in this order in the positive direction of the Z axis. Chip 1 can also be called an upper chip provided above chip 2. Chip 2 can also be called a lower chip provided below chip 1.

[0014] Chip 1 and chip 2 are bonded so as to have electrical contact with each other. The bonding surface of chip 1 with chip 2 is referred to as bonding surface 1a and is illustrated. The bonding surface of chip 2 with chip 1 is referred to as bonding surface 2a and is illustrated. One example of bonding is Cu-Cu bonding, in which case the exposed Cu on bonding surface 1a and bonding surface 2a are directly connected to each other. In addition to Cu-Cu, for example, TSV (Through-Silicon Via), microbumps, etc. may also be used.

[0015] 2 is a diagram showing an example of a schematic configuration of the photodetector 100. The photodetector 100 includes a pixel array section 4 and a circuit section 5. The photodetector 100 is shown exploded in the Z-axis direction, with a chip 1 and a chip 2.

[0016] The pixel array unit 4 is provided on the chip 1. The pixel array unit 4 includes a plurality of pixels 3. Each pixel 3 includes a photoelectric conversion unit 120 (shown in FIG. 3 and the like, which will be described later). Examples of the photoelectric conversion unit 120 include a PD (photodiode), an APD (avalanche photodiode), and a SPAD (single photon avalanche diode).

[0017] APD may be interpreted as including SPAD. Unless otherwise specified, they are collectively referred to as SPAD. To the extent not contradictory, when simply referring to SPAD, it may be interpreted as meaning at least one of SPAD and APAD.

[0018] There are two types of pixels 3. One type of pixel is a pixel used mainly for imaging and is referred to as imaging pixels 3p and illustrated. The other type of pixel is a pixel used mainly for distance measurement and is referred to as distance measurement pixels 3d and illustrated. The imaging pixels 3p detect at least visible light. The distance measurement pixels 3d detect at least distance measurement light (light for distance measurement). An example of the distance measurement light is IR light, and an example wavelength is 940 nm.

[0019] In the pixel array section 4, a portion (region) where the imaging pixels 3p are provided is referred to as an imaging pixel array section 4p and is illustrated, and a portion where the ranging pixels 3d are provided is referred to as a ranging pixel array section 4d and is illustrated.

[0020] The imaging pixel array section 4p includes a plurality of imaging pixels 3p arranged at least in the column direction (Y-axis direction). In other words, in the imaging pixel array section 4p, the plurality of imaging pixels 3p are arranged in at least a one-dimensional array (1D arrangement). The plurality of imaging pixels 3p may also be arranged in the row direction (X-axis direction), in which case the plurality of imaging pixels 3p are arranged in a two-dimensional array (2D arrangement) in the imaging pixel array section 4p.

[0021] The ranging pixel array unit 4d includes a plurality of ranging pixels 3d arranged at least in the column direction. In other words, in the ranging pixel array unit 4d, the plurality of ranging pixels 3d are arranged in at least a one-dimensional array (1D arrangement). The plurality of ranging pixels 3d may also be arranged in the row direction, in which case the plurality of ranging pixels 3d are arranged in a two-dimensional array (2D arrangement) in the ranging pixel array unit 4d.

[0022] When there is no particular distinction between the imaging pixel array section 4p and the ranging pixel array section 4d, they will simply be referred to as the pixel array section 4. When there is no particular distinction between the imaging pixels 3p and the ranging pixels 3d, they will simply be referred to as the pixels 3.

[0023] In each pixel 3 of the pixel array unit 4, light to be detected by that pixel 3 is incident on the photoelectric conversion unit 120 of that pixel 3, generating an electric charge. In response to this generation of electric charge, an electric signal is generated. The pixel 3 and its peripheral circuit (pixel circuit) related to this may differ depending on whether the photoelectric conversion unit 120 is a PD or a SPAD. This will be described with reference to FIGS. 3 and 4 .

[0024] 3 and 4 are diagrams showing examples of circuits. In the following description, a transistor being connected between two elements means that one of the source and drain of the transistor is connected to one element, and the other of the source and drain is connected to the other element. The cathode of the photoelectric conversion unit 120 is referred to as cathode 120c and is shown in the drawings. A signal line that outputs a signal from the circuit is referred to as signal line SL and is shown in the drawings.

[0025] 3 shows the circuit of the imaging pixel 3p. In this example, the photoelectric conversion unit 120 is a PD. The photoelectric conversion unit 120 generates charges according to the amount of incident light. The circuit includes the photoelectric conversion unit 120, multiple transistors TR, and a floating diffusion FD.

[0026] The transistors TR are denoted by reference numerals TR-TG, TR-RS, TR-AMP, and TR-SEL. When no particular distinction is made between these, they are simply referred to as transistors TR.

[0027] The transistor TR-TG is connected between the photoelectric conversion unit 120 and the floating diffusion FD, and transfers the charge generated in the photoelectric conversion unit 120 to the floating diffusion FD. The transistor TR-TG can also be called a transfer transistor. A drive signal (which can also be called a control signal) is supplied to the gate of the transistor TR-G, thereby controlling the on and off of the transistor TR-G.

[0028] The floating diffusion FD accumulates the charge from the photoelectric conversion unit 120 and generates a voltage signal according to the amount of the charge. The floating diffusion FD can also be called a conversion element that converts the charge into a voltage.

[0029] The transistor TR-RST is connected between the floating diffusion FD and the power supply voltage VDD, and discharges (resets) the charge accumulated in the floating diffusion FD. When the transistor TR-TG is on, the charge in the photoelectric conversion unit 120 is also discharged. The transistor TR-RST can also be called a reset transistor. A drive signal is supplied to the gate of the transistor TR-RST, which controls the on and off of the transistor TR-RST.

[0030] The transistor TR-AMP is connected between the power supply voltage VDD and the transistor TR-SEL. The gate of the transistor TR-AMP is connected to the floating diffusion FD. A voltage corresponding to the voltage of the floating diffusion FD is output from the transistor TR-AMP.

[0031] The transistor TR-SEL is connected between the transistor TR-AMP and the signal line SL, and selectively outputs the output voltage of the transistor TR-AMP to the signal line SL. This voltage is output as a signal via the signal line SL. The transistor TR-SEL can also be called a selection transistor. A drive signal is supplied to the gate of the transistor TR-SEL, which controls the on and off of the transistor TR-SEL.

[0032] For example, the above circuit configuration can generate and extract a signal corresponding to the generation of charges in the photoelectric conversion unit 120, which is a PD. Note that the circuit configuration is not limited to that of FIG. 3 , and various known circuit configurations may be employed.

[0033] The various transistors TR and floating diffusions FD shown in FIG. 3 may be provided on the chip 1 (FIG. 2) as components of the imaging pixel 3p.

[0034] FIG. 4 shows the circuit of the ranging pixel 3d. In this example, the photoelectric conversion unit 120 is a SPAD. This photoelectric conversion unit 120 generates electric charges with high sensitivity in response to incident light. The circuit includes the photoelectric conversion unit 120 and multiple transistors TR. The multiple transistors TR are indicated by the reference numerals TR-IN and TR-INV. When there is no need to distinguish between them, they are simply referred to as transistors TR.

[0035] The transistor TR-IN is an example of a quench resistance element. The transistor TR-IN is connected to the photoelectric conversion unit 120 so as to perform recharging to initialize the voltage due to electrons avalanche-amplified in the photoelectric conversion unit 120. In this example, the transistor TR-IN is connected between the power supply voltage VDD and the photoelectric conversion unit 120, and is controlled by a drive signal supplied to the gate.

[0036] The transistor TR-INV is a general term for the multiple transistors that make up the inverter circuit. The transistor TR-INV is connected between the photoelectric conversion unit 120 and the signal line SL. The transistor TR-INV generates an electrical signal, more specifically a pulse signal, in response to the generation of electric charges in the photoelectric conversion unit 120 and outputs the signal signal to the signal line SL.

[0037] For example, the above circuit configuration can generate and extract a signal corresponding to the generation of charge in the photoelectric conversion unit 120, which is a SPAD. It should be noted that various known circuit configurations may be employed, not limited to the circuit configuration of FIG. 4 . Various quench circuits, recharge circuits, wave-shaping circuits, etc. may be used. In addition to passive quench and passive recharge, active quench and active recharge methods may also be employed. An edge method that extracts the rising edge of a pixel signal may also be employed, or level detection that samples the ON time may also be employed. For example, see PCT / JP2025 / 002012, previously filed by the applicant of the present application.

[0038] The various transistors TR shown in FIG. 4 are provided on the chip 2 as components of a pixel circuit 50d (see FIG. 6, which will be described later).

[0039] Returning to FIG. 2 , the photodetector 100 detects light traveling from above to below (in the negative Z-axis direction) of the chip 1, i.e., light incident on the surface (back surface) of the chip 1 opposite to the bonding surface 1a. As described above, in the chip 1, a plurality of imaging pixels 3p are arranged in at least one dimension in the imaging pixel array section 4p. A plurality of ranging pixel array sections 4d are arranged in at least one dimension in the ranging pixel array section 4d. In such a configuration, a one-dimensional scanner method may be used as the photodetection method. This will be described with reference to FIG. 5 .

[0040] 5 is a diagram showing an example of a schematic configuration of the photodetection device 100. The area that is the target of photodetection by the photodetection device 100 is shown as a detection area A. Light from the detection area A is incident on a line area A corresponding to one pixel row. ｌｉｎｅ It is detected every time.

[0041] The photodetector 100 further includes a scanning mechanism 9 in addition to the chip 1 and the chip 2. The scanning mechanism 9 performs line scanning on the detection area A so that light from the detection area A is incident on a plurality of pixels 3 that form a pixel row. ｌｉｎｅ is scanned, and the line area A ｌｉｎｅ Light from the array is directed onto the corresponding pixel columns of chip 1.

[0042] There are no particular limitations on the specific configuration of the scanning mechanism 9, and various configurations may be used. For example, the scanning mechanism 9 may be configured to include a limited angle torque motor (LATM), or may be configured to include a polygon mirror.

[0043] As described above, the photodetector 100 has both imaging and distance measurement functions. During imaging, the detection area A is line-scanned, and the line area A ｌｉｎｅ Light from the scanning mechanism 9 is guided to the corresponding pixel row of the imaging pixels 3p and detected.

[0044] During distance measurement, for example, light from a light source device (not shown) is transmitted as distance measurement light to a line area A via a scanning mechanism 9. ｌｉｎｅ Line area A ｌｉｎｅThe ranging light reflected by the ranging pixels 3d is guided to the pixel row of the corresponding ranging pixels 3d via the scanning mechanism 9 and detected. A direct time of flight (dToF) method may be used. For each pixel 3, the distance to the portion of the detection area A corresponding to each pixel 3 is calculated based on the time from when the ranging light is emitted to when it is detected.

[0045] Unless otherwise specified, hereinafter, it is assumed that the light detection by the light detection device 100 is of the one-dimensional scanner type as described above.

[0046] Returning to FIG. 2 , the circuit unit 5 is provided on the chip 2. The circuit unit 5 is electrically connected to the pixel array unit 4 of the chip 1. The circuit unit 5 drives the pixel array unit 4 of the chip 1 and processes signals from the pixel array unit 4. Examples of driving include exposure and signal readout of each pixel 3, and for example, drive signals for this purpose are supplied to several transistors TR described above with reference to FIGS. 3 and 4 . Various drive circuits such as a row selection circuit and a column selection circuit may be included in the circuit unit 5. Examples of signal processing include image signal generation, distance measurement, etc.

[0047] The circuit unit 5 includes an imaging circuit unit 5p and a ranging circuit unit 5d. The imaging circuit unit 5p is electrically connected to the imaging pixel array unit 4p of the chip 1. As described above, the imaging pixel 3p includes a pixel circuit, such as the transistor TR shown in FIG. 3, that generates an electrical signal in response to the generation of electric charge in the photoelectric conversion unit 120 of the imaging pixel 3p. A signal from this pixel circuit is sent from the imaging pixel 3p to the imaging circuit unit 5p. The ranging circuit unit 5d is electrically connected to the ranging pixel array unit 4d of the chip 1, more specifically, to the photoelectric conversion unit 120 of the imaging pixel array unit 4p, for example.

[0048] 6 is a diagram showing an example of a schematic configuration of the photodetector 100. The block configuration of the imaging circuit section 5p and the distance measurement circuit section 5d is shown.

[0049] The imaging circuit section 5p includes a conversion circuit 51p and a signal processing circuit 52p.

[0050] The conversion circuit 51p performs analog-to-digital (AD) conversion on signals from each imaging pixel 3p of the imaging pixel array unit 4p, i.e., signals (analog signals) from the pixel circuits. Various circuits such as a counter circuit may be included in the conversion circuit 51p. The AD-converted signals are sent from the conversion circuit 51p to a signal processing circuit 52p.

[0051] The signal processing circuit 52p processes the signals from the conversion circuit 51p. One example of this processing is the generation of an image signal. For example, the image signal for the detection area A described above is generated based on the signal for each imaging pixel 3p after AD conversion by the conversion circuit 51p.

[0052] The distance measurement circuit section 5d includes a pixel circuit 50d, a conversion circuit 51d, and a signal processing circuit 52d.

[0053] The pixel circuit 50d includes a transistor in the circuit of the ranging pixel 3d, for example, the transistor TR shown in FIG. 4 described above. That is, the pixel circuit 50d generates an electrical signal, more specifically, a pulse signal, in response to the generation of electric charges in the photoelectric conversion unit 120 of the ranging pixel 3d. The generated pulse signal is sent from the pixel circuit 50d to the conversion circuit 51d.

[0054] The conversion circuit 51d generates information indicating the light reception time (light reception timing) based on the pulse signal from the pixel circuit 50d. This information is also referred to as time information. A plurality of pieces of time information are generated in response to the plurality of pulse signals repeatedly sent during one exposure period. Based on the time information, the conversion circuit 51d generates a signal indicating (data of) a histogram. This signal is sent from the conversion circuit 51d to the signal processing circuit 52d.

[0055] The signal processing circuit 52d generates a distance measurement result based on the signal from the conversion circuit 51d, i.e., the histogram of light-reception times. The light-reception times of the distance-measuring light are estimated from the histogram, and the time from the emission time of the distance-measuring light to the light-reception time in the photodetector 100 is calculated based on the determined time. The distance to each part in the detection area A is calculated based on the calculated time (dToF method).

[0056] The circuit unit 5 further includes an IF 5i. The IF 5i is an interface unit for transmitting and receiving data to and from a device (e.g., a processor) external to the chip 2. Signals from the external device are supplied to the imaging circuit unit 5p and the ranging circuit unit 5d via the IF 5i, and signals from the imaging circuit unit 5p and the ranging circuit unit 5d are supplied to the external device.

[0057] <Floor Plan> In the photodetector 100 having the configuration described above, various arrangements (floor plans) of the pixel array section 4 and the circuit section 5 can be devised. Some examples will be described.

[0058] As described above, the photoelectric conversion unit 120 of the ranging pixel 3d is provided on chip 1. The transistor TR (FIG. 4) connected to this photoelectric conversion unit 120 is provided on chip 2. The photoelectric conversion unit 120 and the transistor TR may be arranged so as to be located close to each other.

[0059] 6, pixel circuit 50d is disposed on chip 2 so that pixel circuit 50d is located directly below imaging pixel array section 4p of chip 1. In a plan view (viewed in the Z-axis direction), pixel circuit 50d of ranging circuit section 5d overlaps with ranging pixel array section 4d. For example, by electrically connecting pixel circuit 50d to ranging pixel array section 4d via the Cu-Cu junction described above, it is possible to position transistor TR (FIG. 4) of pixel circuit 50d as close as possible to photoelectric conversion section 120 (FIG. 4) of ranging pixel array section 4d.

[0060] Various other floor plans are also possible. For example, in the example shown in FIG. 6, the conversion circuit 51p is arranged on chip 2 so that the conversion circuit 51p on chip 2 is located directly below the imaging pixel array section 4p on chip 1. In a plan view, the conversion circuit 51p on the imaging circuit section 5p overlaps with the imaging pixel array section 4p. The conversion circuit 51p can be located as close as possible to the pixel circuit. Other floor plans will be further described with reference to FIGS. 7 to 13.

[0061] 7 to 13 are diagrams showing examples of floor plans.

[0062] 7, the imaging pixel array unit 4p and the ranging pixel array unit 4d are spaced apart from each other in the row direction (X-axis direction) of the chip 1. The separation distance may be greater than the size of one or more pixels 3. The imaging pixel array unit 4p is located at one end of the chip 1 (the end on the negative X-axis direction).

[0063] In chip 2, each block is arranged along the signal flow within circuit unit 5. Specifically, in imaging circuit unit 5p, conversion circuit 51p and signal processing circuit 52p are arranged in this order along the positive X-axis direction. In ranging circuit unit 5d, pixel circuit 50d, conversion circuit 51d, and signal processing circuit 52d are arranged in this order along the positive X-axis direction.

[0064] In the examples shown in Figures 8 and 9, a thermometer 6 is also provided. Various circuit configurations for temperature detection may be used. The temperature may vary depending on the position within the chip. The thermometer 6 may be provided on chip 2 as shown in Figure 8, or on chip 1 as shown in Figure 9. The thermometers 6 may be provided at multiple locations within the same chip, and the number of thermometers 6 is not particularly limited.

[0065] As shown in FIG. 9 , a bias 7 may be arranged. Various circuit configurations for the bias may be used. The voltage from the bias 7 may be applied to the photoelectric conversion units 120 of the imaging pixels 3p in the imaging pixel array unit 4p or to the photoelectric conversion units 120 of the ranging pixels 3d in the ranging pixel array unit 4d. For example, separate voltages may be applied to the PD and the SPAD. For example, the voltage of the bias 7 may be adjusted according to the results of temperature detection by the thermometer 6. This makes it possible to suppress variations in electrical characteristics caused by temperature variations in various parts of the chip. For more specific configurations, see, for example, Patent Document 15 (International Publication No. WO 2022 / 269982).

[0066] 10, the imaging pixel array unit 4p is arranged at one end (the end on the negative side of the X-axis) of the chip 1. The ranging pixel array unit 4d is arranged at the other end (the end on the positive side of the X-axis) of the chip 1. The distance between the imaging pixel array unit 4p and the ranging pixel array unit 4d is maximized.

[0067] 11 to 13 show further examples of the floor plan of the chip 1. The pixel array section 4 includes a plurality of imaging pixel array sections 4p and a plurality of ranging pixel array sections 4d. A plurality of pairs of the imaging pixel array section 4p and ranging pixel array section 4d are arranged adjacent to each other in the X-axis direction.

[0068] 11, the imaging pixel array units 4p and ranging pixel array units 4d are arranged alternately in the row direction (X-axis direction). More specifically, there are three pairs of imaging pixel array units 4p and ranging pixel array units 4d arranged in this order.

[0069] 12 and 13, there are two pairs. In the example shown in Fig. 12, the arrangement order of the imaging pixel array section 4p and the ranging pixel array section 4d in the row direction is opposite to that of the other pair. In the example shown in Fig. 13, the arrangement order of the imaging pixel array section 4p and the ranging pixel array section 4d in the row direction is the same as that of the other pair. As in Fig. 11, the imaging pixel array section 4p and the ranging pixel array section 4d are arranged alternately in the row direction.

[0070] <Example of Chip Stacking Structure> The chip 1 and the chip 2 may be stacked in a WoW (wafer-on-wafer) state or a CoW (chip-on-wafer) state. This will be described with reference to FIGS. 14 and 15 .

[0071] 14 is a diagram showing an example of WoW (wafer-on-wafer). Chip 1 and chip 2 are stacked on top of each other in the form of a wafer. Chip 1 includes an imaging pixel array unit 4p and a ranging pixel array unit 4d.

[0072] FIG. 15 is a diagram showing an example of CoW (chip on wafer). One of chips 1 and 2, chip 1 in this example, has a two-chip configuration. One chip 1 is referred to as chip 1-1 and shown in the figure. The other chip 1 is referred to as chip 1-2 and shown in the figure. Chip 1-1 is provided with an imaging pixel array section 4p. Chip 1-2 is provided with a ranging pixel array section 4d. The space between chip 1-1 and chip 1-2 may be an air gap or may be filled with SiO2, resin, etc.

[0073] The photoelectric conversion units 120 of the ranging pixels 3d in the ranging pixel array unit 4d may be PDs. Furthermore, as will be described later, the photoelectric conversion units 120 of the imaging pixels 3p in the imaging pixel array unit 4p may be SPADs. In other words, any combination of the photoelectric conversion units 120 for detecting visible light and ranging light, and PDs and SPADs is possible.

[0074] 15, a PD may be provided on chip 1-1 and a SPAD may be provided on chip 1-2 as the photoelectric conversion unit 120. Chips 1-1 and 1-2, which have different cross-sectional structures, are stacked on chip 2. An example of the structure will be described with reference to FIG.

[0075] 16 is a diagram showing an example of a schematic configuration of the photodetector 100. A cross section of a portion of the photodetector 100 as viewed in a direction perpendicular to the Z-axis direction, in this example, the X-axis positive direction, is shown.

[0076] The imaging pixel array section 4p includes a plurality of imaging pixels 3p that detect light of different colors. Examples of colors include red (R), green (G), and blue (B). An imaging pixel 3p that detects red light is referred to as imaging pixel 3p-R and illustrated. An imaging pixel 3p that detects green light is referred to as imaging pixel 3p-G and illustrated. Although not shown in FIG. 16 , an imaging pixel 3p that detects blue light is referred to as imaging pixel 3p-B. When there is no need to distinguish between these, they are simply referred to as imaging pixels 3p.

[0077] As described above, the ranging pixels 3d of the ranging pixel array unit 4d detect ranging light.

[0078] The chip 1 includes a wiring layer 11, a photoelectric conversion layer 12, and an optical layer 13. The wiring layer 11, the photoelectric conversion layer 12, and the optical layer 13 are provided in this order in the positive direction of the Z axis.

[0079] First, the photoelectric conversion layer 12 will be described. The photoelectric conversion layer 12 is a layer including a photoelectric conversion unit 120. In this example, the photoelectric conversion unit 120 of the imaging pixel 3p is a PD. The photoelectric conversion unit 120 of the ranging pixel 3d is a SPAD.

[0080] An isolation structure (e.g., a trench) is provided between the photoelectric conversion units 120 of adjacent pixels 3. The isolation may include optical isolation or electrical isolation. A voltage may be applied to the isolation structure. For example, a negative voltage may be applied to the isolation structure provided between adjacent ranging pixels 3d in the ranging pixel array unit 4d.

[0081] The wiring layer 11 is provided between the photoelectric conversion layer 12 and the bonding surface 1a. Wiring (including vias) included in the wiring layer 11 are illustrated schematically. Of the wiring in the wiring layer 11, wiring exposed at the bonding surface 1a is referred to as wiring 111 and illustrated.

[0082] In the imaging pixel array section 4p, the cathode 120c of the photoelectric conversion section 120 in the photoelectric conversion layer 12 is connected to the various transistors TR (FIG. 3) described above via the wiring in the wiring layer 11. A signal from there is output to the wiring 111.

[0083] In the ranging pixel array section 4d, the cathode 120c of the photoelectric conversion section 120 in the photoelectric conversion layer 12 is connected to a wiring in the wiring layer 11. A signal from there is output to the wiring 111.

[0084] The optical layer 13 is provided so as to cover the photoelectric conversion layer 12, i.e., the photoelectric conversion units 120 of the plurality of pixels 3. The optical layer 13 guides, of the incident light, light to be detected by that pixel 3 to the photoelectric conversion units 120 of that pixel 3. The optical layer 13 includes a lens 131, and also includes a filter 132 in the imaging pixel array unit 4p of the ranging pixel array unit 4d.

[0085] In this example, a lens 131 is provided for each imaging pixel 3p and each ranging pixel 3d, and focuses incident light onto the photoelectric conversion unit 120 of the imaging pixel 3p or ranging pixel 3d.

[0086] The filter 132 passes light of the color detected by that imaging pixel 3p. The filter 132 of the imaging pixel 3p can also be called a color filter. The filter 132 that passes red light is called filter 132R and illustrated. The filter 132 that passes green light is called filter 132G and illustrated. Although not shown in FIG. 16 , the filter 132 that passes blue light is called filter 132B. When there is no need to distinguish between these, they are simply called filters 132.

[0087] The chip 2 includes a wiring layer 21. Of the wirings (including vias) included in the wiring layer 21, those exposed on the bonding surface 2a are illustrated as wirings 211. The wirings 211 are connected to the circuit unit 5 (see FIG. 6, etc.) via the wirings of the wiring layer 21.

[0088] The chip 1 and the chip 2 are stacked so that the wiring 111 exposed on the bonding surface 1 a of the chip 1 contacts the wiring 211 exposed on the bonding surface 2 a of the chip 2. Electrical connection between the chip 1 and the chip 2 is obtained.

[0089] 16 is merely an example, and various other configurations may be adopted. For example, a region having a fine uneven structure may be formed between the photoelectric conversion unit 120 and the filter 132. This can diffuse light and improve light detection efficiency. For example, see Patent Document 16 (JP 2020-174157 A).

[0090] <SPAD Imaging Pixel> In one embodiment, a SPAD may be used as the photoelectric conversion unit 120 of the imaging pixel 3p. This will be described with reference to FIGS.

[0091] 17 and 18 are diagrams showing an example of a schematic configuration of the photodetector 100. FIG.

[0092] Figure 17 shows the circuit of imaging pixel 3p. In this example, the photoelectric conversion unit 120 of imaging pixel 3p is a SPAD. The circuit configuration and operation are the same as those shown in Figure 4, which was previously described. The photoelectric conversion unit 120 is provided on chip 1 (Figure 2) as a component of imaging pixel 3p. Transistors TR-IN and TR-INV are provided on chip 2 as components of pixel circuit 50p (Figure 18), which will be described later.

[0093] Fig. 18 shows a block diagram of the imaging circuit unit 5p. The imaging circuit unit 5p further includes a pixel circuit 50p. The pixel circuit 50p includes a transistor in the circuit of the imaging pixel 3p, specifically the transistor TR shown in Fig. 17 above. The pixel circuit 50p generates a pulse signal in response to the generation of charge in the photoelectric conversion unit 120 of the imaging pixel 3p. The generated pulse signal is sent from the pixel circuit 50p to a conversion circuit 51p.

[0094] The conversion circuit 51p of the imaging circuit unit 5p includes a count circuit 511. The count circuit 511 counts pulse signals from the pixel circuit 50p. The greater the amount of light incident on the imaging pixel 3p, the greater the count value, so the count value can indicate the amount of incident light. A signal indicating the count value is sent from the conversion circuit 51p to the signal processing circuit 52p.

[0095] The signal processing circuit 52p processes the signal from the conversion circuit 51p. One example of this processing is the generation of an image signal. For example, the image signal for the detection area A described above is generated based on the count results, i.e., count values, of the count circuit 511 of the conversion circuit 51p for each imaging pixel 3p.

[0096] For example, as described above, imaging can be performed using a SPAD. This enables highly sensitive imaging, increasing the possibility of improving the performance of the photodetector 100. Furthermore, by using a SPAD for the photoelectric conversion units 120 of both the imaging pixel 3 p and the ranging pixel 3 d provided on the same chip 1, costs can be reduced.

[0097] <Example of Cross-Sectional Structure> Figure 19 is a diagram showing an example of the general configuration of the photodetector 100. A cross section of a portion of the photodetector 100 is shown schematically. The photoelectric conversion units 120 of the imaging pixels 3p and the ranging pixels 3d are both SPADs. Note that in this example, multiple lenses 131 are provided for one imaging pixel 3p (for one photoelectric conversion unit 120).

[0098] There are other types of imaging pixels 3p besides the imaging pixels 3p-R, 3p-G, and 3p-B described above. In these imaging pixels 3p, the optical layer 13 may further include a light-shielding layer 133. The light-shielding layer 133 is provided between the photoelectric conversion unit 120 and the filter 132. Various materials may be used for the light-shielding layer 133, and one example is W (tungsten).

[0099] An imaging pixel 3p in which the entire photoelectric conversion unit 120 is light-shielded is referred to as imaging pixel 3p-OPB and is illustrated. The imaging pixel 3p-OPB is used to obtain a signal (corresponding to a black signal) when no light is incident on the photoelectric conversion unit 120, and can also be called an optical black pixel. In the example shown in FIG. 19 , a filter 132R and a filter 132B are provided on the lens 131 in the imaging pixel 3p-OPB. This can improve light-shielding performance, for example.

[0100] An imaging pixel 3p in which part of the photoelectric conversion unit 120 is shielded from light (light-shielded imaging pixel) is referred to as an imaging pixel 3p-ND or an imaging pixel 3p-ZAF.

[0101] The imaging pixel 3p-ND has lower sensitivity than the imaging pixel 3p by limiting the light incident on the photoelectric conversion unit 120. In other words, the light-shielding layer 133 functions as an ND (Neutral Density) filter. It is particularly suitable for detecting light from high-brightness (high-illuminance) areas. The imaging pixel 3p-ND that detects red light is shown in the figure as imaging pixel 3p-ND-R. Although not shown in the figure, there are also imaging pixels 3p-ND-G that detect green light and 3p-ND-B that detect blue light.

[0102] The imaging pixel 3p-ZAF is used to detect an image plane phase difference. A more specific example of its use is focus adjustment (autofocus). There is a pair of imaging pixels 3p-ZAF, each of which has different portions of its photoelectric conversion unit 120 shielded from light, and one of these is shown in FIG. 19.

[0103] The imaging pixel 3p-ZAF that detects green light is illustrated as imaging pixel 3p-ZAF-G. Although not shown in the figure, there are also imaging pixels 3p-ZAF-R that detect red light and 3p-ZAF-B that detect blue light.

[0104] <Cut Filter> In one embodiment, a filter for cutting unwanted light may be provided to prevent unwanted light from entering the imaging pixel array unit 4p and the ranging pixel array unit 4d. This will be described with reference to FIGS. 20 and 21 .

[0105] 20 and 21 are diagrams showing an example of a schematic configuration of the photodetector 100. The photodetector 100 further includes a cut filter 14. The cut filter 14 is provided on the opposite side of the optical layer 13 from the photoelectric conversion layer 12, i.e., above the optical layer 13 (on the positive Z-axis direction side). In this example, the cut filter 14 is provided outside the chip 1. However, the cut filter 14 may also be incorporated into the chip 1.

[0106] The cut filter 14 includes multiple filters, more specifically, in this example, a ranging light cut filter 14p and a visible light cut filter 14d. The ranging light cut filter 14p cuts out ranging light and passes visible light. The ranging light cut filter 14p is provided to cover the imaging pixel array section 4p. The visible light cut filter 14d cuts out visible light and passes ranging light. The visible light cut filter 14d is provided to cover the ranging pixel array section 4d.

[0107] Various known filter configurations may be used. A selective filter (also called an SIR filter, etc.) may be used as the distance measurement light cut filter 14p.

[0108] As described above, the imaging pixel array unit 4p and the ranging pixel array unit 4d may be arranged with a gap between them. This makes it easier to arrange the ranging light cut filter 14p and the visible light cut filter 14d that cover them. The ranging light cut filter 14p and the visible light cut filter 14d may also be arranged with a gap between them.

[0109] <Stacked Structure of Photoelectric Conversion Layer> In one embodiment, the photoelectric conversion layer 12 may have a multi-layer structure, for example, a two-layer structure. This results in a three-layer structure including two photoelectric conversion layers 12 and a layer of the circuit section 5. This will be described with reference to FIG. 22 .

[0110] 22 is a diagram showing an example of the schematic configuration of the photodetector 100. Two photoelectric conversion layers 12 are stacked. The first photoelectric conversion layer is referred to as photoelectric conversion layer 12-1 and is shown in the figure. The second photoelectric conversion layer is referred to as photoelectric conversion layer 12-2 and is shown in the figure. The photoelectric conversion layer 12-2 and the photoelectric conversion layer 12-1 are provided in this order in the positive direction of the Z axis.

[0111] The photoelectric conversion unit 120 included in the photoelectric conversion layer 12-1 corresponds to the photoelectric conversion unit of the imaging pixel array unit 4p and is used to detect visible light. The photoelectric conversion unit 120 included in the photoelectric conversion layer 12-2 corresponds to the photoelectric conversion unit of the ranging pixel array unit 4d and is used to detect ranging light. Note that the ranging light passes through the optical layer 13 and the photoelectric conversion layer 12-1 before reaching the photoelectric conversion layer 12-2, and is therefore attenuated to some extent, but is still detectable.

[0112] <Correction Circuit> As mentioned above, when the photoelectric conversion unit 120 of the imaging pixel 3p is a SPAD, an image signal is generated based on the count value of the pulse signal. This count value may change nonlinearly with respect to the amount of incident light. This will be described with reference to Figures 23 and 24.

[0113] 23 and 24 are diagrams showing examples of nonlinearity. The horizontal axis of the graph indicates the amount of incident light. The vertical axis of the graph indicates SNR (Signal to Noise ratio) in FIG. 23 and the count value in FIG. 24. As the amount of incident light increases, both the count value and the SNR increase. However, this change is nonlinear.

[0114] It is necessary to accurately determine the amount of incident light from the count value while taking into consideration the nonlinearity described above, and in one embodiment, a correction process for this purpose may be performed.

[0115] Fig. 25 is a diagram showing an example of a schematic configuration of the photodetector 100. In this example, the signal processing circuit 52p includes a correction circuit 521. The correction circuit 521 corrects the count result of the count circuit 511 (i.e., a signal indicating the count value) so as to obtain a signal having a level according to the amount of light incident on the photoelectric conversion unit 120 of the imaging pixel 3p. Description will be made with reference to Fig. 26 as well.

[0116] 26 is a diagram showing an example of correction by the correction circuit 521. A signal indicating a count value is input to the correction circuit 521. The level of this input signal changes nonlinearly with respect to the amount of incident light. The correction circuit 521 has input / output characteristics that cancel out this nonlinearity. For example, broken line correction may be performed. The level of the signal output by the correction circuit 521 changes linearly with respect to the amount of incident light.

[0117] In the circuit of the imaging pixel 3p (FIG. 17) when the photoelectric conversion unit 120 is a SPAD, a pulse signal is not generated during recharge, resulting in a dead time. The dead time may vary depending on individual differences in the SPAD. The correction circuit 521 may be designed to accommodate such individual differences.

[0118] For example, an image signal is generated based on the signal after the correction as described above. The linear correction increases the possibility of obtaining a high dynamic range. Note that nonlinear correction such as the gamma characteristic of a display can also be used, in which case the linear correction described above does not need to be performed.

[0119] <Fusion Algorithm> Returning to the topic of ranging, when a SPAD is used as the photoelectric conversion unit 120 of the ranging pixel 3d, the resolution may be reduced. To increase the resolution, the fusion algorithm described below may be used.

[0120] 27 is a diagram schematically illustrating the fusion algorithm. Data obtained based on a signal from an imaging pixel 3p is referred to as imaging data. The imaging data indicates, for example, the amount of light of the color detected by the imaging pixel 3p. Data obtained based on a signal from a ranging pixel 3d is referred to as ranging data. The ranging data indicates the distance to a location in detection area A corresponding to ranging pixel 3d.

[0121] The imaging and ranging resolutions, i.e., the resolutions of the imaging pixel array unit 4p and ranging pixel array unit 4d, may be different from each other. For example, the imaging pixels 3p in the imaging pixel array unit 4p and the ranging pixels 3d in the ranging pixel array unit 4d may be arranged at different densities, or the scanning resolutions may be different. Specifically, it is assumed here that the imaging pixel array unit 4p has high resolution and the ranging pixel array unit 4d has low resolution.

[0122] The fusion algorithm may be processed by the circuit unit 5 (see FIG. 6, etc.), more specifically, by the signal processing circuits 52 p and 52 d. The circuit unit 5 associates the ranging data with the imaging data to generate high-resolution point data.

[0123] By generating a large number of point data across the entire detection area A, it is possible to obtain not only image information of the detection area A but also distance information for each part of the detection area A. Such point data includes information on the three-dimensional space of the detection area A, and is also referred to as point cloud data, etc.

[0124] As an example, as shown on the left side of Fig. 27, 12 (4 x 3) pieces of imaging data and one piece of distance measurement data are acquired. By fusing these pieces of data, a larger number of point data than the number of distance measurement data can be obtained. In other words, it is possible to increase the resolution of the point cloud.

[0125] As mentioned above, the distance measurement data can be acquired in the form of a histogram. A peak (including a maximum value) of the histogram indicates a distance candidate value for a corresponding region in the detection region A. Here, if the histogram has multiple peaks (maximum values), multiple distance candidate values ​​will be indicated for the same region in the detection region A. It is necessary to select an appropriate distance candidate value from the multiple distance candidate values. The processing in this case will be described with reference to FIGS. 28 and 29.

[0126] 28 and 29 are diagrams showing an example of distance candidate value selection. As shown in Fig. 28, in this example, two objects, object OBJ1 and object OBJ2, exist in detection area A. Several areas in detection area A are shown and referred to as area A1, area A2, and area A12.

[0127] Area A1 exists only in object OBJ1. Area A2 exists only in object OBJ2. Area A12 exists across both objects OBJ1 and OBJ2 (straddling them). An area within area A12 that corresponds to one piece of imaging data is referred to as area A12x and illustrated.

[0128] 29, a histogram of distance measurement data is shown in a graph, where the horizontal axis of the graph represents distance and the vertical axis of the graph represents frequency.

[0129] The image data is shown as light intensity values ​​for each color, more specifically, for red (R), green (G), and blue (B). For areas A1 and A2, the average light intensity value for the entire area is shown. For area A12x in area A12, the light intensity value for area A12x is shown.

[0130] The distance for area A1 is uniquely determined because the histogram of the ranging data has only one peak. This distance is associated as ranging data with the 12 pieces of imaging data for area A1. Similarly, the distance for area A2 is uniquely determined because the histogram of the ranging data has only one peak. This distance is associated as ranging data with the 12 pieces of ranging data for area A2.

[0131] The distance of area A12 cannot be uniquely determined because the histogram of the distance measurement data has two peaks. Therefore, distance measurement data that indicates an appropriate distance candidate value for each area within area A12 is found, and the distance measurement data is associated with the imaging data for that area.

[0132] Specifically, the imaging data of area A12x is compared with the imaging data of other areas, in this example, areas A1 and A2. The ranging data of the other areas from which the imaging data most similar (including identical) is obtained is associated with the imaging data of area A12x. In this example, the ranging data of area A2, out of areas A1 and A2, is adopted and associated with the imaging data of area A12x.

[0133] For example, in the manner described above, even when a plurality of distance candidate values ​​are indicated for the same area A12x in the detection area A, it is possible to find an appropriate distance candidate value.

[0134] <Flicker Suppression> Flicker suppression is also possible, as will be described with reference to FIG.

[0135] 30 is a diagram showing an example of flicker suppression processing. A signal processing circuit 52p is shown as an example of a processing subject. A frame memory M is used. There are no particular restrictions on the location of the frame memory M, as long as it can be used by the signal processing circuit 52p.

[0136] The frame memory M stores image signals (frame data) of multiple frames. The image signal of one frame corresponds to the image signal of the detection area A at a certain time. The image signals of the multiple frames include the image signal of the current frame and the image signal of a previous frame. The image signal of a previous frame is the image signal of one or more frames before.

[0137] When the image signal of the latest frame is obtained, that image signal replaces the image signal of the current frame. The image signal before replacement replaces the image signal of the previous frame. The same applies to image signals of two or more frames before, within the capacity of the frame memory M.

[0138] The signal processing circuit 52p adds together signals from the imaging pixels 3p for multiple frames, more specifically, image signals from the current frame and previous frames. The addition may be weighted addition, and the image signals of each frame may be added at any ratio. Adding image signals from multiple frames in this manner can suppress flickering. For example, this can improve the recognition rate of traffic lights, signs, etc.

[0139] <Spaced Arrangement> As described above, the imaging pixel array section 4p and the ranging pixel array section 4d may be arranged spaced apart from each other in the chip 1. This will be explained again with reference to FIGS.

[0140] 31 and 32 are diagrams illustrating an example of the schematic configuration of the photodetector 100. The imaging pixel array unit 4p and the ranging pixel array unit 4d are arranged with a gap between them. In other words, the imaging pixel 3p located closest to the ranging pixel array unit 4d in the imaging pixel array unit 4p (in this example, toward the positive X-axis) and the ranging pixel 3d located closest to the imaging pixel array unit 4p in the ranging pixel array unit 4d (in this example, toward the negative X-axis) are arranged with a gap between them. This increases the likelihood of suppressing inter-pixel crosstalk, such as the incidence of ranging light on the imaging pixel 3p and the incidence of visible light on the ranging pixel 3d.

[0141] The distance between the imaging pixel array unit 4p and the ranging pixel array unit 4d may be N pixels, where N is an integer greater than or equal to 1. In the example shown in Fig. 31, N is 1. In the example shown in Fig. 32, N is 2 or greater.

[0142] Since the imaging pixel array section 4p and the ranging pixel array section 4d are arranged at a distance from each other, it is easier to arrange the cut filter 14 (FIG. 20) described above. For example, the cut filter 14 can be provided in the package that houses chip 1 and chip 2. This will be described with reference to FIGS. 33 to 37.

[0143] 33 is a diagram showing an example of a schematic configuration of the photodetector 100. The photodetector 100 includes a package 8 that houses a chip 1 and a chip 2.

[0144] The package 8 includes a substrate 81, a die bonding material 82, a mold resin 83, a sealing resin 84, and glass 85. Solder balls SB are provided on the bottom surface (the surface on the positive Z-axis side) of the substrate 81. A die bonding material 82, a chip 2, and a chip 1 are provided in this order on the top surface (the surface on the positive Z-axis side) of the substrate 81. The substrate 81, the chip 1, and the chip 2 are electrically connected via wires W. A mold resin 83 is provided so as to cover the substrate 81, the die bonding material 82, the chip 2, the chip 1, and the wires W, and a sealing resin 84 and glass 85 are provided thereon in this order.

[0145] The cut filter 14 is provided in the package 8. The cut filter 14 includes a distance measurement light cut filter 14p that cuts IR light (an example of distance measurement light) and a visible light cut filter 14d that passes IR light but cuts visible light.

[0146] 34 is a diagram showing an example of the characteristics of the cut filter 14. The horizontal axis of the graph represents wavelength. The vertical axis of the graph represents transmittance. The distance measurement light cut filter 14p passes (transmits) light in the visible wavelength band and cuts light in the IR wavelength band. The visible light cut filter 14d passes (transmits) light in the IR wavelength band and cuts light in the visible wavelength band.

[0147] 33, since the cut filter 14 can be provided as an element outside the chip 1, it is possible to increase the degree of freedom in designing the cut filter 14 and improve its performance, for example. In the example shown in Fig. 33, the distance measurement light cut filter 14p and the visible light cut filter 14d are provided on the upper surface (the surface on the positive Z-axis direction side) of the glass 85 of the package 8. Some modified examples will be described with reference to Figs. 35 to 37.

[0148] 35 to 37 are diagrams showing an example of the schematic configuration of the photodetector 100. In the example shown in Fig. 35, the cut filter 14 is provided on the lower surface (the surface on the negative Z-axis direction side) of the glass 85. As the cut filter 14 approaches the chip 1, it becomes easier to obtain a filtering effect.

[0149] 36 and 37, the distance measurement light cut filter 14p and the visible light cut filter 14d are spaced apart from each other. As shown in Fig. 37, the glass 85 and the sealing resin 84 may also be separated in accordance with the spaced arrangement of the cut filter 14p and the visible light cut filter 14d.

[0150] For example, the various configurations of the package 8 as described above can be adopted, and the degree of freedom in designing the package 8 is also improved.

[0151] <Example of In-Chip Filter Configuration> As described above, in the chip 1, the imaging pixel 3p is provided with a filter 132 ( FIG. 19 ). In one embodiment, the ranging pixel 3d may also be provided with a filter 132. If the imaging pixel array unit 4p and the ranging pixel array unit 4d are arranged at a distance from each other, the filter 132 for the imaging pixel 3p and the filter 132 for the ranging pixel 3d can also be arranged at a distance from each other. This can improve the degree of freedom in design. This will be described with reference to FIG. 38 .

[0152] 38 is a diagram showing an example of the schematic configuration of the photodetector 100. The optical layer 13 also includes a filter 132 in the ranging pixel 3d. The filter 132 in the ranging pixel 3d passes ranging light, more specifically, IR light, and is illustrated as a filter 132IR. Note that when the filter 132IR is not to be particularly distinguished from other filters 132, it is simply referred to as the filter 132.

[0153] Since the imaging pixel array section 4p and the ranging pixel array section 4d are spaced apart, the filter 132 for the imaging pixel 3p and the filter 132IR for the ranging pixel 3d are also spaced apart. This improves the design flexibility of the filter 132. For example, different types of filters, more specifically filters with different structures, principles, etc., may be used for the imaging pixel 3p and the ranging pixel 3d. Examples of the filter 132 include a plasmon filter and a resonant filter. For example, a plasmon filter such as that disclosed in Patent Document 5 (JP 2021-153198 A) or a resonant filter such as that disclosed in Patent Document 6 (JP 2022-000968 A) may be used as the filter 132I.

[0154] <Dummy Pixels> In one embodiment, dummy pixels may be arranged between the imaging pixel array unit 4p and the ranging pixel array unit 4d. This will be described with reference to FIGS.

[0155] 39 and 40 are diagrams showing an example of a schematic configuration of the photodetector 100. The photodetector 100 includes dummy pixels 3x. The dummy pixels 3x are provided between the imaging pixel array unit 4p and the ranging pixel array unit 4d so as to maintain the periodic arrangement of the pixels 3. A pixel column made up of the dummy pixels 3x may be arranged between them. By providing the dummy pixels 3x, the repeating pattern created during manufacturing is maintained. This may potentially increase pixel sensitivity.

[0156] The dummy pixel 3x may have a structure different from that of the imaging pixel 3p. Specifically, the dummy pixel 3x includes a photoelectric conversion unit 120 and a light-shielding layer 133 provided so as to cover the entire photoelectric conversion unit 120.

[0157] 39 , the dummy pixel 3x also includes a lens 131 and a filter 132. The filter 132 of the dummy pixel 3x may be a filter that passes visible light if the adjacent pixel is an imaging pixel 3p, or a filter that passes ranging light if the adjacent pixel is a ranging pixel 3d.

[0158] In the example shown in Figure 40, the dummy pixel 3x does not include a lens 131. The presence of the lens 131 may result in a regular structure, which may cause interference of reflected light (flare phenomenon). Eliminating the lens 131 can suppress such flare reduction. Providing a filter 132 that can suppress light reflection can further enhance the flare reduction suppression effect.

[0159] <Image Plane Phase Difference Ranging> In one embodiment, a ranging pixel 3d having a configuration similar to that of the imaging pixel 3p-ZAF may be present. This will be described with reference to FIGS.

[0160] 41 is a diagram showing an example of a schematic configuration of the photodetection device 100. The multiple ranging pixels 3d include ranging pixels 3d-ZAF. The ranging pixels 3d-ZAF are ranging pixels 3d (light-shielded ranging pixels) in which a portion of their photoelectric conversion units 120 (SPAD in this example) is shielded from light by a light-shielding layer 133.

[0161] There is a pair of ranging pixels 3d-ZAF, each of which has light-shielded different portions of its photoelectric conversion unit 120. One ranging pixel 3d-ZAF is referred to as ranging pixel 3d-ZAF-1 and is illustrated. The other ranging pixel 3d-ZAF is referred to as ranging pixel 3d-ZAF-2 and is illustrated. When there is no need to distinguish between these pixels, they are simply referred to as ranging pixels 3d-ZAF.

[0162] 41 , the left half (the half on the negative X-axis direction side) of the photoelectric conversion unit 120 (SPAD in this example) of ranging pixel 3d-ZAF-1 is covered by a light-shielding layer 133. The right half (the half on the positive X-axis direction side) of the photoelectric conversion unit 120 of ranging pixel 3d-ZAF-2 is covered by a light-shielding layer 133.

[0163] 42 and 43 are diagrams showing an example of the schematic configuration of a ranging pixel 3d-ZAF. In this example, four lenses 131 are arranged in a square array. A light-shielding layer 133 is arranged for each lens row. This increases the possibility of reducing light reflection and improving light detection efficiency. The light-shielding layer 133 of ranging pixel 3d-ZAF-1 is arranged so as to overlap the left half of each lens 131 (the half on the negative X-axis direction side) (FIG. 42). Looking at ranging pixel 3d-ZAF-1 as a whole, it can be said that its left half is light-shielded. Furthermore, the light-shielding layer 133 of ranging pixel 3d-ZAF-2 is arranged so as to overlap the right half of each lens 131 (FIG. 43). Looking at ranging pixel 3d-ZAF-2 as a whole, it can be said that its right half is light-shielded.

[0164] Distance measurement using a pair of distance measurement pixels 3d-ZAF as described above is possible. This will be described with reference to FIGS.

[0165] 44 to 46 are diagrams illustrating examples of distance measurement. The object to be measured is illustrated as object OBJ. The distance between a pair of distance measurement pixels 3d-ZAF, more specifically, the distance between the centers of their photoelectric conversion units 120, is illustrated as distance X. Distance X is a known value. Light from object OBJ is incident on the photoelectric conversion units 120 of each of the pair of distance measurement pixels 3d-ZAF, namely distance measurement pixel 3d-ZAF-1 and distance measurement pixel 3d-ZAF-2. The angle of incidence of light with respect to the top surface of the photoelectric conversion unit 120 is illustrated as angle θ.

[0166] The angle θ can be calculated from the light reception levels of ranging pixels 3d-ZAF-1 and 3d-ZAF-2. As shown in Figure 45, light is incident only on the right side of the photoelectric conversion unit 120 of ranging pixel 3d-ZAF-1. Light is incident only on the left side of the photoelectric conversion unit 120 of ranging pixel 3d-ZAF-2.

[0167] In Figure 46, the horizontal axis of the graph represents the angle θ. The vertical axis of the graph represents the light reception level. The light reception levels of ranging pixel 3d-ZAF-1 and ranging pixel 3d-ZAF-2 behave differently with respect to the angle θ. Because there is a relationship between these two light reception levels and the angle θ, the angle θ can be calculated from the two light reception levels.

[0168] 44, the distance D to the object OBJ is calculated using the distance X and the angle θ. Specifically, the distance D is calculated as D=X tan(θ / 2).

[0169] For example, as described above, distance measurement can be performed based on the distance D between a pair of distance measurement pixels 3d-ZAF and their light reception levels. This distance measurement is also called image plane phase difference distance measurement. The main part of the distance measurement process may be the imaging circuit unit 5p (see FIG. 6, etc.).

[0170] The light blocking pattern of the ranging pixel 3d-ZAF is not limited to the above example. Other examples of the light blocking pattern will be described with reference to FIGS.

[0171] Fig. 47 is a diagram showing an example of the schematic configuration of the photodetector 100. Figs. 48 and 49 are diagrams showing an example of the schematic configuration of the ranging pixel 3d-ZAF.

[0172] 47, the upper half (the half on the positive Y-axis direction side) of the photoelectric conversion unit 120 (SPAD in this example) of ranging pixel 3d-ZAF-1 is covered with a light-shielding layer 133. The lower half (the half on the negative Y-axis direction side) of the photoelectric conversion unit 120 of ranging pixel 3d-ZAF-2 is covered with a light-shielding layer 133.

[0173] In the example shown in Figures 48 and 49, four (2 x 2) lenses 131 are arranged in a square array. A light-shielding layer 133 is arranged for each lens row. The light-shielding layer 133 of ranging pixel 3d-ZAF-1 is arranged so as to overlap the upper half of each lens 131 (the half on the positive Y-axis side) (Figure 48). Looking at ranging pixel 3d-ZAF-1 as a whole, it can be said that its upper half is light-shielded. Furthermore, the light-shielding layer 133 of ranging pixel 3d-ZAF-2 is arranged so as to overlap the lower half of each lens 131 (Figure 49). Looking at ranging pixel 3d-ZAF-2 as a whole, it can be said that its lower half is light-shielded.

[0174] The above-described image plane phase difference ranging and the dToF ranging may be used in combination. This will be described with reference to FIGS.

[0175] 50 and 51 are diagrams showing examples of combinations of ranging techniques. The ranging range by the imaging pixel 3p-ZAF and the ranging range by the ranging pixel 3d are schematically indicated by white arrows. For short-distance (near distance) ranging, image plane phase difference ranging is used. For long-distance (far distance) ranging, the dToF method is used. As shown in FIG. 51, the ranging range using image plane phase difference ranging and the ranging range using the dToF method may partially overlap.

[0176] In the dToF method, either the ranging pixel 3d-ZAF with a portion shielded from light or the ranging pixel 3d without a portion shielded from light may be used. For image plane phase difference ranging, the ranging pixel 3d-ZAF is used as described above.

[0177] Combining the two types of ranging makes it possible to take advantage of the advantages of both methods while widening the dynamic range of ranging. For example, using image plane phase difference ranging for long-distance ranging can result in larger ranging errors. This is because the longer the distance, the greater the impact of errors in the angle θ on the ranging results. Using the dToF method for long-distance ranging can address this issue. On the other hand, with the dToF method, for example, if there is a large amount of light reflection from the object OBJ, the ranging pixel 3d is more likely to become saturated. This problem can become particularly apparent in short-distance ranging. Using image plane phase difference ranging for short-distance ranging can address this issue. Another advantage of the ranging pixel 3d-ZFA is that it is less likely to become saturated because part of it is light-shielded and has low sensitivity.

[0178] There are various other advantages as well. For example, in image plane phase difference ranging, there is no need to irradiate ranging light onto the object OBJ or to detect ranging light reflected by the object OBJ. Therefore, ranging errors due to the reflectance, shape, etc. of the object OBJ are unlikely to occur. Furthermore, there is little influence even if there is an obstruction such as glass between the light detection device 100 and the object OBJ.

[0179] <Reducing Sensitivity of the Ranging Pixels 3d> For example, when using the dToF method, if there is a large amount of light reflection from the object OBJ, the ranging pixels 3d may become saturated. This problem becomes particularly apparent when the distance is short. In order to prevent saturation of the ranging pixels 3d, the sensitivity of the ranging pixels 3d may be reduced. This will be described with reference to FIGS. 52 to 63.

[0180] 52 to 63 are diagrams showing examples of reducing the sensitivity of the ranging pixel 3d. The ranging pixel 3d in which a portion of the photoelectric conversion unit 120 is shielded from light (light-shielded ranging pixel) is shown as ranging pixel 3d-ND. Various light-shielding patterns are possible.

[0181] In the examples shown in Figures 52 to 55, the light-shielding layer 133 is provided so as to cover one-quarter of the photoelectric conversion unit 120. The sensitivity is reduced to three-quarters. For example, as shown in Figure 52, the upper left portion of the photoelectric conversion unit 120 may be light-shielded. As shown in Figure 53, the upper right portion of the photoelectric conversion unit 120 may be light-shielded. As shown in Figure 54, the lower left portion of the photoelectric conversion unit 120 may be light-shielded. As shown in Figure 55, the lower right portion of the photoelectric conversion unit 120 may be light-shielded.

[0182] In the examples shown in Figures 56 to 59, the light-shielding layer 133 is provided so as to cover half of the photoelectric conversion unit 120. The sensitivity is reduced by half. For example, as shown in Figure 56, the left portion of the photoelectric conversion unit 120 may be light-shielded. As shown in Figure 57, the right portion of the photoelectric conversion unit 120 may be light-shielded. As shown in Figure 58, the upper portion of the photoelectric conversion unit 120 may be light-shielded. As shown in Figure 59, the lower portion of the photoelectric conversion unit 120 may be light-shielded.

[0183] In the examples shown in Figures 60 to 63, the light-shielding layer 133 is provided so as to cover three-quarters of the photoelectric conversion unit 120. The sensitivity is reduced to one-quarter. For example, as shown in Figure 60, the left and upper right portions of the photoelectric conversion unit 120 are shielded from light. As shown in Figure 61, the right and upper left portions of the photoelectric conversion unit 120 may be shielded from light. As shown in Figure 62, the left and lower right portions of the photoelectric conversion unit 120 may be shielded from light. As shown in Figure 63, the right and lower left portions of the photoelectric conversion unit 120 may be shielded from light.

[0184] <Pixel Array in Chip> A wide variety of pixel columns including the wide variety of pixels 3 described above may be provided on the chip 1. This will be described with reference to FIG.

[0185] 64 is a diagram showing an example of the schematic configuration of the photodetection device 100. In this example, the pixel array patterns are broadly divided into patterns PT1, PT2, PT3, and PT4. The imaging pixel array unit 4p includes patterns PT1, PT2, and PT3. The ranging pixel array unit 4d includes pattern PT4.

[0186] Pattern PT1 is a pattern of a pixel row including imaging pixel 3p-OPB. Imaging pixel 3p-OPB is a fully light-shielded imaging pixel (OPB pixel) in which the entire photoelectric conversion unit 120 is shielded from light by a light-shielding layer 133. For example, a signal obtained when no light is input to the photoelectric conversion unit 120, in other words, a signal corresponding to a black level (OPB signal), is obtained. One example of an application is dark current detection. By subtracting the signal from imaging pixel 3p-OPB from the signals from the other imaging pixels 3p, a signal with reduced noise can be obtained (noise reduction).

[0187] Pattern PT2 is a pattern of pixel rows including imaging pixel 3p-R, imaging pixel 3p-G, imaging pixel 3p-B, imaging pixel 3p-ZAF, imaging pixel 3p-ND, and imaging pixel 3p-XT, etc. Imaging pixel 3p-XT is a pixel surrounded by imaging pixel 3p-OPB, and can be used for crosstalk evaluation, etc.

[0188] Pattern PT3 is a pattern of pixel rows including imaging pixels 3p-R, 3p-G, 3p-B, and 3p-ND, etc. Pattern TP4 is a pattern of pixel rows including ranging pixel 3d.

[0189] Note that when multiple pixels 3 that detect light of the same color are arranged adjacent to each other, the signals from those pixels 3 may be added together. This type of addition is also called pixel addition or binning. The pixels 3 for pixel addition are also included in at least a part of the patterns PT1, PT2, PT3, and TP4.

[0190] Some features of each type of pixel 3 described above will now be further explained with reference to Figures 65 to 78.

[0191] <Examples of Color Arrangement (Color Filter Arrangement)> Figures 65 to 70 are diagrams showing examples of color arrangement. Note that the arrangement of the lenses 131 is not limited to the examples shown in the figures. For example, in the examples shown in Figures 65 to 69, four lenses 131 (2 x 2) are arranged in one imaging pixel 3p, but this is not limiting, and any number of lenses 131 may be arranged in either the X-axis direction or the Y-axis direction.

[0192] An RGGB array is shown in Figure 65. Pixel units each consisting of one imaging pixel 3p-R, two imaging pixels 3p-G, and one imaging pixel 3p-B are repeatedly arranged. In each pixel unit, the imaging pixels 3p-R, 3p-G, and 3p-B are arranged in accordance with the Bayer array.

[0193] An RYYCy array is shown in Figure 66. An imaging pixel 3p that detects yellow (Y) light is referred to as imaging pixel 3p-Y and is illustrated. The filter 132 of imaging pixel 3p-Y is illustrated and is referred to as filter 132Y. The filter 132Y passes yellow light. An imaging pixel 3p that detects cyan (Cy) light is illustrated and is referred to as imaging pixel 3p-Cy and is illustrated. The filter 132 of imaging pixel 3p-Cy is illustrated and is referred to as filter 132Cy. The filter 132Cy passes cyan light. A pixel unit consisting of one imaging pixel 3p-R, two imaging pixels 3p-Y, and one imaging pixel 3p-Cy is arranged repeatedly.

[0194] An RCCB array is shown in Figure 67. An imaging pixel 3p without a filter 132 is shown as imaging pixel 3p-C. Pixel units each consisting of one imaging pixel 3p-R, two imaging pixels 3p-C, and one imaging pixel 3p-B are repeatedly arranged.

[0195] An RCCG array is shown in Fig. 68. A pixel unit consisting of one imaging pixel 3p-R, two imaging pixels 3p-C, and one imaging pixel 3p-G is repeatedly arranged.

[0196] FIG. 69 shows a GRGB array. Pixel units each consisting of two imaging pixels 3p-G, one imaging pixel 3p-R, and one imaging pixel 3p-B are repeatedly arranged. The imaging pixel array section 4p includes a pixel row consisting of multiple imaging pixels 3p that detect light of the same color. Specifically, in this example, there is a pixel row (green pixel row) consisting of multiple imaging pixels 3p-G. In a one-dimensional scanner system, green light can be detected at the same timing and on the same optical axis. This increases the possibility of improving image quality, for example.

[0197] FIG. 70 shows an RGB line array. The imaging pixel array section 4p includes a pixel column consisting of a plurality of imaging pixels 3p that detect light of the same color. Specifically, in this example, there is a pixel column (red pixel column) consisting of a plurality of imaging pixels 3p-R, a pixel column (green pixel column) consisting of a plurality of imaging pixels 3p-G, and a pixel column (blue pixel column) consisting of a plurality of imaging pixels 3p-B. The red pixel column, green pixel column, and blue pixel column are arranged side by side in the row direction (X-axis direction). In a one-dimensional scanner system, light of each color can be detected at the same timing and on the same optical axis. This increases the possibility of improving image quality, for example.

[0198] 71 and 72 are diagrams showing examples of the arrangement of imaging pixels 3p-OPB. The imaging pixels 3p-OPB may be arranged on the periphery of the imaging pixel array section 4p. For example, a light-shielding layer 133 may be arranged around the periphery of the imaging pixel array section 4p, and the imaging pixels 3p-OPB can be easily obtained by extending the light-shielding layer 133.

[0199] In the example shown in Figure 71, the imaging pixel array section 4p includes a pixel column (OPB pixel column) consisting of multiple imaging pixels 3p-OPB. Multiple OPB pixel columns are arranged side by side in the row direction (X-axis direction). This type of arrangement can also be called HOPB (Horizontal Optical Black). This makes it easier to ensure a wide angle of view for the effective pixels.

[0200] In the example shown in Figure 72, the imaging pixel array section 4p includes a pixel row (OPB pixel row) consisting of multiple imaging pixels 3p-OPB. Multiple OPB pixel rows are arranged side by side in the column direction (Y-axis direction). This type of arrangement can also be called VOPB (Vertical Optical Black). Dark current components can be detected for all rows in the same column.

[0201] <Example of Sensitivity Adjustment> The pixel 3 for pixel addition and the imaging pixel 3p-ND described above can be used for sensitivity adjustment. This will be explained with reference to FIGS.

[0202] 73 is a diagram showing an example of sensitivity adjustment. High sensitivity can be achieved by adding and using signals from two or more pixels 3 (pixel addition). For example, signals from 18 imaging pixels 3p may be added. As an example, 18 imaging pixels 3p arranged in 3 rows and 6 columns are shown in the figure. Signals from six imaging pixels 3p may be added. As an example, six imaging pixels 3p arranged in 1 row and 6 columns are shown in the figure.

[0203] Instead of arranging multiple imaging pixels 3p for pixel addition, a single imaging pixel 3p having a larger size may be arranged. For example, a single imaging pixel 3p having the same size as the 18 imaging pixels 3p or 6 imaging pixels 3p shown in the figure may be arranged. However, arranging multiple imaging pixels 3p of the same size for pixel addition has the advantage of reducing variation and facilitating manufacturing, because it allows imaging pixels 3p of the same size to be arranged throughout the entire imaging pixel array section 4p.

[0204] As mentioned above, sensitivity can be reduced by using a signal from an imaging pixel 3p-ND in which a portion of the photoelectric conversion unit 120 is shielded from light (ND filter). For example, a signal from an imaging pixel 3p-ND (0.75 pixel) in which a quarter of the pixel is shielded from light may be used. A signal from an imaging pixel 3p-ND (0.5 pixel) in which a half of the pixel is shielded from light may be used. A signal from an imaging pixel 3p-ND (0.25 pixel) in which three-quarters of the pixel is shielded from light may be used.

[0205] Naturally, light detection at normal sensitivity is also possible by using signals from imaging pixels 3p that are not used for pixel addition and are not shaded.

[0206] As shown by the white arrow in Figure 73, the greater the number of pixel summations, the higher the sensitivity of light detection. This makes it suitable for use in detecting light at low brightness (low illuminance). The greater the pixel light-blocking range, the lower the sensitivity of light detection. This makes it suitable for use in detecting light at high brightness (high illuminance).

[0207] The various imaging pixels 3p shown in Fig. 73 may be arranged as close as possible (for example, adjacently arranged). Since the scanners in the one-dimensional scanner method are continuous, the possibility of improving image quality is increased. This will be explained with reference to Figs. 74 and 75.

[0208] 74 and 75 are diagrams showing examples of pixel arrays. In FIG. 74, 18 imaging pixels 3p-R and 18 imaging pixels 3p-G are shown as examples of imaging pixels 3p capable of pixel addition. A plurality of imaging pixels 3p-ND with different light-shielding ranges of the photoelectric conversion unit 120 are also arranged. In this example, examples include imaging pixels 3p-ND-R with one-quarter light-shielded, imaging pixels 3p-ND-G with one-quarter light-shielded, imaging pixels 3p-ND-R with one-half light-shielded, imaging pixels 3p-ND-G with one-half light-shielded, imaging pixels 3p-ND-R with one-half light-shielded, imaging pixels 3p-ND-G with three-quarters light-shielded, and imaging pixels 3p-ND-G with three-quarters light-shielded. These pixel columns are arranged side by side in the row direction (X-axis direction). As shown in FIG. 75, the imaging pixels 3p with one-half light-shielded may be imaging pixels 3p-ZAF.

[0209] <Color Center of Gravity> The imaging pixel 3p-ND, which is partially light-shielded, may have a different position of the color center of gravity compared to the imaging pixel 3p, which is not light-shielded. This will be described with reference to FIGS.

[0210] 76 to 78 are diagrams showing examples of color centroids. The color centroid of an imaging pixel 3p is shown as color centroid 3g. Color centroid 3g corresponds to the center of gravity of the unshaded portion of imaging pixel 3p.

[0211] As shown in Fig. 76, the color centroid 3g of the unshaded imaging pixel 3p is the same as the center of the imaging pixel 3p. On the other hand, as shown in Fig. 77, the color centroid 3g of the imaging pixel 3p-ND may be different from the center of the imaging pixel 3p-ND.

[0212] By devising a light-shielding pattern, it is possible to align the color centroid 3g of the imaging pixel 3p-ND with the center position of the imaging pixel 3p-ND. For example, as shown in Fig. 78, by shading the diagonal corners of the imaging pixel 3p (arranging the openings diagonally) or by uniformly shading the outer periphery of the imaging pixel 3p-ND, it is possible to align the color centroid 3g with the center of the imaging pixel 3p-ND.

[0213] <Application Examples of Sensitivity Adjustment> It is possible to use imaging pixels 3p whose sensitivities have been adjusted in various ways as described above. For example, if there are multiple regions with different brightnesses within the same detection region A, an image signal may be generated using signals acquired at different sensitivities for each region. This will be described with reference to Figures 79 to 82.

[0214] FIG. 79 is a diagram showing an example of detection area A. Several areas in detection area A are schematically indicated by white arrows as area A3, area A4, and area A5. Area A3, area A4, and area A5 have different brightness levels. In this example, area A3 is the brightest and area A5 is the darkest. Area A4 has a brightness level between these. The brightness of light from area A3 is the highest and the brightness of light from area A4 is the lowest. The brightness of light from area A4 has a size between these. When areas A3, A4, and A5 are not particularly distinguished from each other, they are simply referred to as areas.

[0215] FIG. 80 is a diagram showing an example of signal acquisition at different sensitivities. A medium-sensitivity signal is obtained from an imaging pixel 3p (a normal pixel that is not light-shielded). A low-sensitivity signal is obtained from an imaging pixel 3p-ND (a light-shielded imaging pixel) that is partially light-shielded. A high-sensitivity signal is obtained by adding signals from multiple imaging pixels 3p for pixel addition (pixel addition). By combining signals with such different sensitivities, an appropriate image signal can be generated using signals obtained within a range that does not saturate the photoelectric conversion unit 120, for example.

[0216] The processing may be performed by the imaging circuit unit 5p (see FIG. 6, etc.), or more specifically, by the signal processing circuit 52p. For example, the imaging circuit unit 5p selects, for each region, from among a plurality of signals with different sensitivities, the signal that is most suitable for detecting light from that region, and generates an image signal for that region based on the selected signal. The following description will also refer to FIGS. 81 and 82.

[0217] 81 and 82 are diagrams showing an example of a process (imaging method) executed in the light detection device 100. FIG.

[0218] As shown in Fig. 81 , in step S1, the imaging circuit unit 5p acquires a high-sensitivity signal. Light from the detection area A for one frame is detected using a plurality of imaging pixels 3p for pixel addition. The imaging circuit unit 5p adds up the signals from the plurality of imaging pixels 3p for pixel addition. A high-sensitivity signal is obtained. The obtained high-sensitivity signal may be stored in a memory. An example of the memory is the frame memory M described above with reference to Fig. 30 .

[0219] In step S2, the imaging circuit unit 5p acquires a medium-sensitivity signal. Light from the detection area A for one frame is detected using normal (non-pixel addition) imaging pixels 3p. A medium-sensitivity signal is obtained. The obtained medium-sensitivity signal may be stored in memory.

[0220] In step S3, the imaging circuit unit 5p acquires a low-sensitivity signal. Light from the detection area A for one frame is detected using the imaging pixel 3p-ND, some of which is light-shielded. The low-sensitivity signal is obtained. The obtained signal may be stored in memory.

[0221] The order of steps S1, S2 and S3 may be changed arbitrarily.

[0222] In step S4, the imaging circuit unit 5p selects a signal for each region. For example, the imaging circuit unit 5p selects the signal that is not saturated and has the highest sensitivity from the high-sensitivity signal, medium-sensitivity signal, and low-sensitivity signal acquired in steps S1 to S3.

[0223] 82 shows an example of the specific processing in step S4 for one region. In step S41, the imaging circuit unit 5p determines whether the high-sensitivity signal is saturated. For example, the imaging circuit unit 5p determines that the high-sensitivity signal is saturated when the signal level of the high-sensitivity signal is equal to or higher than a predetermined upper limit level. If the high-sensitivity signal is saturated (step S41: Yes), the process proceeds to step S42. If not (step S41: No), the process proceeds to step S45.

[0224] In step S42, the imaging circuit unit 5p determines whether the medium-sensitivity signal is saturated. The determination method may be the same as that for the high-sensitivity signal described above. If the medium-sensitivity signal is saturated (step S42: Yes), the process proceeds to step S43. If not (step S42: No), the process proceeds to step S44.

[0225] In steps S43 to S45, the imaging circuit unit 5p selects a non-saturated signal as the signal for that region. Specifically, in step S43, a low-sensitivity signal is selected. In step S44, a medium-sensitivity signal is selected. In step S45, a high-sensitivity signal is selected.

[0226] For example, the processes in steps S41 to S45 are performed for each area (area A3, area A4, area A5, etc.) in the detection area A. A signal suitable for detecting light from each area is selected.

[0227] 81, in step S5, the imaging circuit unit 5p generates an image signal based on the selected signals. An image signal is generated based on the selected signals for each region in the detection region A. By combining these signals, an image signal for the detection region A is obtained.

[0228] <Image Plane Phase Difference> The imaging pixels 3p-ZAF and ranging pixels 3d-ZAF for detecting image plane phase differences are as previously described with reference to, for example, Figures 19 and 41 to 51. The imaging pixels 3p-ZAF and ranging pixels 3d-ZAF are arranged with various light-shielding patterns, such as those with the upper half shielded, the lower half shielded, the left half shielded, and the right half shielded. This can be used not only for autofocusing but also for the image plane phase difference ranging described above (for example, for short-distance ranging).

[0229] <XT (Crosstalk)> The crosstalk pixel imaging pixel 3p-XT (FIG. 64) can be used not only for basic evaluation of crosstalk, but also for correction by signal processing, for example. One example of such correction is flare removal using adjacent pixels. For example, the method disclosed in Patent Document 18 (WO 2022 / 239459) may be used.

[0230] <Existing SPAD> The photoelectric conversion unit 120 of the ranging pixel 3d may be a SPAD. As described above, the ranging pixel 3d is also arranged on the chip 1 on which the imaging pixel 3p is arranged.

[0231] 64, for example, a wide variety of pixels 3 as described above are arranged on a chip 1. By using such a chip 1 in a one-dimensional scanner system, it is possible to select any pixel row in the chip 1 and perform light detection using that pixel row.

[0232] <TDI Operation> In the one-dimensional scanner method, the exposure time of one column of pixels 3 is limited. This will be described with reference to FIG.

[0233] 83 is a diagram showing an example of exposure time in the one-dimensional scanner method. ｌｉｎｅ and line area A ｌｉｎｅ For each column, line area A ｌｉｎｅ Light from the

[0234] One line area A ｌｉｎｅThe exposure time is determined by the frame rate (fps) and resolution. The resolution here corresponds to the number of divisions of the detection area A. For example, in the case of 10 fps and 1920 divisions, the exposure time is (1 / 10) / 1920 = 52 μsec. In the case of imaging, an exposure time on the order of milliseconds to sub-milliseconds may be desirable, and there is a possibility that the exposure time may be insufficient.

[0235] To compensate for the lack of exposure time, TDI (Time Delay Integration) may be employed. ｌｉｎｅ The light from the object is detected and the resulting signals are added (integrated). This has the same effect as extending the exposure time, i.e., it enables higher sensitivity.

[0236] In one embodiment, the configuration of the circuit unit 5 of the photodetector 100 may be devised so as to efficiently perform the signal addition required for TDI operation. As an example, a ranging pixel 3d and a ranging circuit unit 5d will be described with reference to FIGS. 84 to 97. Note that a similar description can also be given for the imaging pixel 3p and the imaging circuit unit 5p, and to the extent that there is no contradiction, the ranging pixel 3d and the ranging circuit unit 5d may be appropriately read as the imaging pixel 3p and the imaging circuit unit 5p.

[0237] <Example of Signal Addition> Figure 84 is a diagram showing an example of the schematic configuration of a ranging pixel 3d and ranging circuit unit 5d. In this example, the ranging pixel 3d is configured to detect light of a corresponding color. Color information can also be acquired. For example, each ranging pixel 3d also includes a filter 132 that passes light of the corresponding color.

[0238] The ranging pixels 3d that detect blue light are referred to as ranging pixels 3d-B. The ranging pixels 3d that detect green light are referred to as ranging pixels 3d-G. The ranging pixels 3d that detect red light are referred to as ranging pixels 3d-R. When no particular distinction is made between these, they are simply referred to as ranging pixels 3d.

[0239] Color information and the like can be obtained not only from the detection results of the imaging pixels 3p but also from the detection results of the ranging pixels 3d. For example, information that cannot be determined from one detection result alone can be supplemented by using the other detection result. To give a specific example, if a person located in front of the vehicle is obscured by the vehicle's headlights, the person cannot be identified based on the visible light detection results of the imaging pixels 3p alone, and there is a possibility that information will be insufficient. By also using the detection results of the ranging pixels 3d, the missing information can be supplemented.

[0240] 84 illustrates six pixel columns as the multiple pixel columns, more specifically, one ranging pixel 3d in each pixel column. The column direction corresponds to the Y-axis direction. There are two or more ranging pixels 3d (same-color pixels) that are included in different pixel columns and detect light of the same color. There are also two or more ranging pixels 3d (different-color pixels) that are included in different pixel columns and detect light of different colors.

[0241] Specifically, in the example shown in Figure 84, there are two ranging pixels 3d-B, two ranging pixels 3d-G, and two ranging pixels 3d-R. To distinguish between the two ranging pixels 3d-B, they are referred to as ranging pixels 3d-B1 and 3d-B2 in the drawings. To distinguish between the two ranging pixels 3d-G, they are referred to as ranging pixels 3d-G1 and 3d-G2 in the drawings. To distinguish between the two ranging pixels 3d-R, they are referred to as ranging pixels 3d-R1 and 3d-R2 in the drawings. When there is no need to distinguish between them, they are simply referred to as ranging pixels 3d-B, ranging pixels 3d-G, and ranging pixels 3d-R.

[0242] The ranging circuit unit 5d includes a memory unit 55. The memory unit 55 holds signals from ranging pixels 3d in multiple pixel columns. Specifically, the memory unit 55 includes multiple memories 550. Each memory 550 holds signals from ranging pixels 3d in a corresponding pixel column. These signals may be held in the form of analog voltage signals, or in the form of digital voltage signals, i.e., bit signals (bit data).

[0243] The signal from each ranging pixel 3d is held in the corresponding memory 550. The signals from ranging pixel 3d-B1, ranging pixel 3d-G1, ranging pixel 3d-R1, ranging pixel 3d-B2, ranging pixel 3d-G2, and ranging pixel 3d-R2 are referred to and illustrated as signal sB1, signal sG1, signal sR1, signal sB2, signal sG2, and signal sR2. When no particular distinction is made between these signals, they are simply referred to as signals or individual signals.

[0244] There are two or more memories 550 corresponding to the two or more same-color pixels described above, and there are also two or more memories 550 corresponding to two or more different-color pixels. The memory unit 55 is configured so that signals can be transferred between any of the memories 550. Any of the memories may include two or more memories 550 corresponding to two or more same-color pixels, or may include two or more memories 550 corresponding to two or more different-color pixels. This improves the flexibility of signal storage. Description will be made with reference to Figure 85 as well.

[0245] 85 is a diagram showing an example of signal transfer within the memory unit 55. Several transfer paths are indicated schematically by arrows. A signal held in any memory 550 can be transferred to any other memory 550.

[0246] 85, signal sR2 is transferred from memory 550 holding signal sR2 to any other memory 550. Signal sG2 is transferred from memory 550 holding signal sG2 to any other memory 550. Signal sB2 is transferred from memory 550 holding signal sB2 to any other memory 550. Signal sB1 is transferred from memory 550 holding signal sB1 to any other memory 550. Although not shown in the figure, the same applies to signals sR1 and sG1.

[0247] The types of ranging pixels 3d are not limited to ranging pixels 3d-B, 3d-G, and 3d-R. Other types of ranging pixels 3d may also be present. An example will be described with reference to FIG. 86.

[0248] FIG. 86 is a diagram showing an example of the schematic configuration of ranging pixels 3d and ranging circuit unit 5d. In this example, in addition to ranging pixels 3d-B, 3d-G, and 3d-R, a ranging pixel 3d-W that detects white light is also present. Two ranging pixels 3d-W are illustrated, and they are designated ranging pixels 3d-W1 and 3d-W2. The signals from ranging pixels 3d-W1 and 3d-W2 are designated signals sW1 and sW2 and are illustrated. The memory unit 55 also includes a memory 550 that stores signals sW1 and sW2. Signals can be transferred between multiple memories 550, including these memories 550.

[0249] As mentioned above, the signal may be held in the form of a bit signal. In this case, the signal corresponds to the digital signal after conversion by the conversion circuit 51d. This will be explained with reference to Figures 87 and 88.

[0250] 87 and 88 are diagrams showing examples of the schematic configuration of ranging pixels 3d and ranging circuit unit 5d. Conversion circuit 51d includes multiple conversion units 510 corresponding to multiple pixel columns. Each conversion unit 510 performs AD conversion on signals from ranging pixels 3d in a corresponding pixel column among the multiple pixel columns. The AD-converted signals are held in memory 550 of memory unit 55.

[0251] As with FIG. 84 described above, FIG. 87 illustrates six ranging pixels 3d corresponding to six pixel columns. Six conversion units 510 corresponding to the six ranging pixels 3d are illustrated. Six memories 550 corresponding to the six conversion units 510 are illustrated. Signals after AD conversion by the conversion units 510 are held in the corresponding memories 550 in the memory unit 55 as signals sB1, sG1, sR1, sB2, sG2, and sR2. These signals can be transferred between any two of the memories 550.

[0252] As with FIG. 86 described above, FIG. 88 illustrates eight ranging pixels 3d corresponding to eight pixel columns. Eight conversion units 510 corresponding to the eight ranging pixels 3d are illustrated. Eight memories 550 corresponding to the eight conversion units 510 are illustrated. Signals after AD conversion by the conversion units 510 are held in the corresponding memories 550 in the memory unit 55 as signals sW1, sB1, sG1, sR1, sW2, sB2, sG2, and sR2. These signals can be transferred between any two of the memories 550.

[0253] The degree of freedom in signal retention can be further increased by devising connections between the ranging pixels 3d, the conversion circuit 51d, and the memory unit 55. An example will be described with reference to FIG.

[0254] 89 is a diagram showing an example of the schematic configuration of ranging pixels 3d and ranging circuit unit 5d. Conversion circuit 51d is configured to be able to selectively supply a signal from the same ranging pixel 3d to at least two of the multiple conversion units 510. Furthermore, memory unit 55 is configured to be able to selectively supply a signal from the same conversion unit 510 to at least two of the multiple memories 550.

[0255] For example, as indicated by the thick arrow in Fig. 89, a signal from ranging pixel 3d-B1 is selectively supplied to one of two conversion units 510. A signal from one conversion unit 510 is selectively supplied to one of two memories 550.

[0256] Various selection circuits may be used to perform the above-described selective supply. The circuit may be configured to have the functions of, for example, a multiplexer (MUX), a switch, or the like.

[0257] As described above, increasing the degree of freedom in signal retention allows for efficient TDI operation. The distance measurement circuit unit 5d uses the memory unit 55 to add up signals from pixels in different pixel columns that detected light from the same part of the object OBJ. This will be explained with reference to Figures 90 to 93.

[0258] 90 to 93 are diagrams showing examples of signal addition. As shown by the white arrows in Fig. 91 and 92, an object OBJ in detection area A moves relative to photodetector 100. This movement can occur, for example, when the position where light strikes changes due to a mirror or the like.

[0259] Two portions of the object OBJ are illustrated and referred to as a first portion OBJ10 and a second portion OBJ20. For ease of understanding, it is assumed here that the first portion OBJ10 has a red color (emits red light) and the second portion OBJ20 has a green color (emits green light).

[0260] 90, at time t10, red light from the first portion OBJ10 is incident on ranging pixels 3d-B1, 3d-G1, and 3d-R1. This light is detected by ranging pixel 3d-R1. A signal sR1 from ranging pixel 3d-R1 is stored in the corresponding memory 550 in memory unit 55.

[0261] 91, at time t20, red light from the first portion OBJ10 is incident on ranging pixels 3d-B2, dp-G2, and 3d-R2. This light is detected by ranging pixel 3d-R2. A signal sR2 from ranging pixel 3d-R2 is stored in the corresponding memory 550 in memory unit 55.

[0262] The signal sR1 obtained at the previous time t10 and the signal sR2 obtained at this time t20 are both detection results of light from the same portion of the object OBJ, in this example, the first portion OBJ10. By adding the signals sR1 and sR2 together, a signal corresponding to twice the exposure time is obtained.

[0263] The addition process is shown schematically in Figures 92 and 93. The time between time t10 and time t20 is shown as time t15.

[0264] 92, at time t10, a signal sR1 is obtained. At time t15, the signal sR1 is transferred to another memory 550, more specifically, in this example, the memory 550 corresponding to ranging pixel 3d-R2. At time t20, a signal sR2 is obtained. This signal sR2 is added to the signal sR1 held in memory 550 and held.

[0265] A timing chart is shown in Figure 93. In this example, a high level indicates active. The ranging pixel 3d is exposed in accordance with the synchronization signal, and a signal from the ranging pixel 3d is acquired and held. At time t15, signals are transferred between memories 550. At time t20, the ranging pixel 3d is again exposed in accordance with the synchronization signal, and a signal from the ranging pixel 3d is acquired. This signal is added to the signal that was previously acquired and held.

[0266] The number of signals to be added may be set to any number equal to or greater than two depending on the design, settings, etc. Signal processing such as noise reduction may be performed on the added signal.

[0267] For example, signal addition processing can be realized as described above. Some example configurations relating to addition will be described with reference to Figs.

[0268] 94 and 95 are diagrams showing examples of signal addition configurations.

[0269] 94, the memory 550 of the memory unit 55 includes a counter 550a. The counter 550a counts up and holds a signal. For example, a counter system capable of exchanging data as disclosed in Patent Document 10 (JP-A-2023-543709) may be employed.

[0270] In the example shown in Figure 95, the memory unit 55 includes an adder 550b in addition to the memory 550. The adder 550b reads out a signal held in the memory 550, adds it to other signals, and writes the result to the memory 550. An SRAM, a flip-flop, or the like may be used. This is effective when adding multiple signals simultaneously or when adding other bit signals. Another advantage is that when exchanging data, it is sufficient to simply change the memory access address.

[0271] Note that the signal addition is not limited to the above example, and various other modes of signal addition are possible. For example, a signal corresponding to red, a signal corresponding to green, and a signal corresponding to blue may be added at any ratio. An example ratio is 3:6:1. Luminance can be easily created. A signal corresponding to cyan can be obtained by adding a signal corresponding to blue and a signal corresponding to green. White can also be reproduced, or a complementary color filter can be reproduced. Various multipliers, shift registers, adders, etc. may be used. Signals of the same color may be added, and then signals of different colors may be added. Further adding a signal corresponding to white increases the possibility of further improving the signal-to-noise ratio of the signal.

[0272] <Application Examples> Several application examples of the circuit configuration will be described. For example, a pixel-parallel ADC such as that disclosed in Patent Document 12 (JP 2021-176206 A) may be used based on the configuration of PCT / JP2025 / 002012 mentioned above. A current mirror (CM) circuit, latch circuit, etc. may be present within the pixel (pixel ADC structure). The difference is that the output from the pixel is 1 bit in SPAD, but in pixel-parallel, it is, for example, an 8-bit output. Since SPAD signals capture the signal the moment light enters, high-speed sampling, for example, 1 GHz, is required, and an asynchronous conversion unit is necessary. On the other hand, ADCs can only sample at a speed of about 0.1 MHz, which means that transfer can be driven synchronously in the conversion unit. From the conversion unit to the signal generation unit, the same system as SPAD can basically be adopted. Furthermore, since the signal from the pixel is a digital signal, all of the connection change methods described above are compatible.

[0273] When analog signals from pixels are AD converted by the conversion unit 510, the position of the ADC may be different from that described above. For example, based on the configuration of PCT / JP2025 / 002012, signals from pixels may be AD converted by a column ADC outside the pixels as disclosed in Patent Document 13 (Japanese Patent Laid-Open Publication No. 2017-055241).

[0274] Signal addition is not limited to digital addition, and may also be analog addition. For example, analog addition can be achieved by using an electronic addition type programmable gain amplifier (PGA). This technique is applied to the conversion unit. An ADC may also be provided within the conversion unit or between the conversion unit and signal generation. In this technique, since analog addition is performed, only a method of switching the connection between the pixel and the conversion unit is applied. The memory 550 may be provided with a CM circuit, a current source circuit, etc., and may be capable of current value on-integration. The signal line from the pixel 3 may be connected to two or more memories 550. A circuit for AD conversion of the analog value stored in the memory 550 may be provided at a subsequent stage.

[0275] Various other modifications are also possible. For example, as in Patent Document 4 (WO 2021 / 166542), a combination of pixels that receive pulsed light to measure distance and a pixel structure that acquires ambient light using RGB color filters (CFs) may be used. Not only may the CFs be different for each line, but the ambient light acquisition pixels (pixels for imaging) may also be a Bayer array. A combination such as a Quad Bayer array may also be used. The ranging pixels and ambient light acquisition pixels may not be on the same layer, but on different layers. In this case, the ranging pixels may be SPADs, and the ambient light pixels may be embedded photodiodes. A method using an organic photoelectric conversion film may also be used. For example, as disclosed in Patent Document 14 (JP 2019-169962 A), a two-layer structure of Si (silicon) may be used. The upper side can be used for ambient light, and the lower side can be used for ranging. Either a PD or a SPAD may be used. As disclosed in Patent Document 17 (JP 2017-59655 A), a SPAD structure may be created using organic materials for RGB and Si, or a two-layer structure of Si may be used to separate the use for distance measurement and ambient light.

[0276] <Example of TDI Operation> Figures 96 and 97 are diagrams showing an example of TDI operation. In the example shown in Figure 96, the ranging pixel array unit 4d includes a total of 32 pixel rows (RGBW pixel rows x 8) in which RGBW pixel rows each consisting of a pixel row of ranging pixels 3d-R, a pixel row of ranging pixels 3d-G, a pixel row of ranging pixels 3d-B, and a pixel row of ranging pixels 3d-W are repeatedly arranged. The exposure is referred to as exposure ep.

[0277] As shown in Fig. 97, 32 exposures ep1 to ep32 are performed. The signals from each of the eight RGBW pixel rows that detected light from the same part of the object OBJ are added together. A signal equivalent to eight times the exposure time is obtained.

[0278] <Dark Current Clamp> In the one-dimensional scanner method, there are two scanning paths, an outward path and a return path. The imaging and distance measurement described above may be performed by scanning on one path. There is room for consideration regarding the use of the other path. In one embodiment, dark current may be detected using the other path. This will be described with reference to FIGS. 98 to 103.

[0279] 98 to 103 are diagrams showing examples of a one-dimensional scanner. The imaging pixels 3p-R, 3p-G, and 3p-B are collectively referred to as imaging pixels 3p-RGB and are shown in the figures. The imaging pixels 3p-RGB are imaging pixels 3p that detect light of the corresponding color, and can also be called color pixels. In addition to the imaging pixels 3p-RGB, the imaging pixels 3p-OPB are also shown as pixels 3 provided on the chip 1. The photoelectric conversion unit 120 of the imaging pixel 3p may be a SPAD.

[0280] 98 to 100 show the light detection on the outward path. The scanning mechanism 9 performs line scanning on the detection area A so that the light from the detection area A is incident on the imaging pixels 3p-RGB. The line area A is scanned along the outward path indicated by the arrow AR1. ｌｉｎｅ moves and scans the detection area A. Line area A ｌｉｎｅ The light from the image sensor is detected by the 3p-RGB imaging pixels.

[0281] As shown in FIGS. 98 and 99, the detection area A is scanned finely (at high resolution), and each line area A ｌｉｎｅ Light from the image pickup area A is detected by the image pickup pixels 3p-RGB. Based on the signals from the image pickup pixels 3p-RGB, an image signal of the entire detection area A as shown in FIG.

[0282] 101 to 103 show light detection on the return path. The scanning mechanism 9 line-scans the detection region A so that light from the detection region A is incident on the imaging pixel 3p-OBP. More specifically, in this example, the scanning mechanism 9 line-scans the detection region A so that at a certain time during scanning, light from the detection region A is incident on the imaging pixel 3p-OBP, and at another time, light from the detection region A is incident on the imaging pixel 3p-RGB. The line region A is scanned along the return path indicated by the arrow AR2. ｌｉｎｅ moves and scans the detection area A. Line area A ｌｉｎｅ The light from the image pickup pixel 3p-OPB is detected by the image pickup pixel 3p-OPB, and the light from the image pickup pixel 3p-RGB is detected by the image pickup pixel 3p-RGB.

[0283] 102 and 103, of the photodetection at the imaging pixel 3p-OPB and the photodetection at the imaging pixel 3p-RGB, the photodetection at the imaging pixel 3p-RGB is indicated by hatching. The white area between them corresponds to the photodetection at the imaging pixel 3p-OPB. In this example, the ratio between the time of photodetection at the imaging pixel 3p-RGB and the time of photodetection at the imaging pixel 3p-OPB is approximately 1:4. Regarding the imaging pixel 3p-RGB, the detection area A is scanned in a thinner manner (at a lower resolution) than in the forward pass described above with reference to FIGS. 99 and 100, and each line area A ｌｉｎｅ The light from each line area A is detected by the imaging pixels 3p-RGB. A thinned image signal can be obtained. ｌｉｎｅ Light from the image pickup pixel 3p-OPB is detected by the image pickup pixel 3p-OPB. Based on the signal from the image pickup pixel 3p-OPB, an OPB signal is obtained for many parts of the detection area A as shown in FIG.

[0284] As mentioned above, the OPB signal is used for dark current detection. In the above example, the imaging circuit unit 5p (see FIG. 6, etc.) subtracts the signal from the imaging pixel 3p-OBP obtained by scanning on the backward pass from the signal from the imaging pixel 3p-RGB obtained by scanning on the following forward pass (digital clamp). The subtraction process may be performed primarily by the conversion circuit 51p of the imaging circuit unit 5p or by the signal processing circuit 52p.

[0285] Digital clamping is possible without requiring additional components, etc. Also, image signals can be obtained by using thinned-out scanning on the return path.

[0286] The relationship between the forward and backward passes may be reversed. For example, signals from the imaging pixel 3p-RGB may be acquired by scanning on the backward pass, and signals from the imaging pixel 3p-OBP may be acquired by scanning on the forward pass.

[0287] On the forward path, signals from the imaging pixels 3p-RGB and 3p-OPB may be acquired alternately. If the imaging pixel 3p-OPB is arranged in the same pixel column as the imaging pixel 3p-RGB, signals from these pixels can be acquired together. Dark current detection is possible on both the forward path and the return path.

[0288] As mentioned above, the scanning mechanism 9 may be a LATM or a polygon mirror. In the case of a polygon mirror, the above-mentioned digital clamping may be performed at an angle not used for scanning.

[0289] <Two-Chip Configuration of Sensor> In one embodiment, the imaging pixel array unit 4p and the ranging pixel array unit 4d may be provided on separate chips. This will be described with reference to FIG.

[0290] 104 is a diagram showing an example of the schematic configuration of the photodetector 100. The imaging pixel array unit 4p and the ranging pixel array unit 4d are provided on separate chips. The chip 1 (imaging chip) on which the imaging pixel array unit 4p is provided is referred to as chip 1-p in the drawing. The chip (ranging chip) on which the ranging pixel array unit 4d is provided is referred to as chip 1-d in the drawing.

[0291] The photodetector 100 includes a housing 90, a laser 91, a lens 92, a mirror 93, a wavelength-selective mirror 94, a lens 95, and a lens 96. The laser 91, the lens 92, the mirror 93, the wavelength-selective mirror 94, the lens 95, and the lens 96 are disposed (housed) in the housing 90 together with the chip 1.

[0292] A laser 91 outputs distance measurement light. The distance measurement light from the laser 91 is output via a lens 92 and a mirror 93 and irradiated onto a detection area A. The light from the detection area A includes distance measurement light and visible light, and is guided to a wavelength-selective mirror 94 via a mirror 93. The distance measurement light is incident on the distance measurement pixel array unit 4d of chip 1-d via the wavelength-selective mirror 94 and a lens 95. The visible light is incident on the imaging pixel array unit 4p of chip 1-p via the wavelength-selective mirror 94 and a lens 96.

[0293] The wavelength-selective mirror 94, lens 95, and lens 96 constitute an optical system that guides visible light from the detection area A to chip 1-p and distance measurement light to chip 1-d. The configuration of the optical system is not limited to the example shown in Fig. 104. Various optical elements may be used.

[0294] For example, as described above, imaging and ranging can be performed by configuring the imaging pixel array unit 4p and the ranging pixel array unit 4d as two chips. This has the advantage of being easy to implement because an existing chip can be used.

[0295] 2. Summary The technology described above can be specified, for example, as follows. One of the disclosed technologies is a photodetection device 100. As described with reference to FIGS. 1 to 13 , the photodetection device 100 includes a chip 1 (first chip) and a chip 2 (second chip) stacked and electrically connected to each other, a pixel array unit 4 provided on the chip 1 and including a plurality of pixels 3, each including a photoelectric conversion unit 120, and a circuit unit 5 provided on the chip 2 and electrically connected to the pixel array unit 4 of the chip 1. The plurality of pixels 3 include imaging pixels 3p that detect visible light and ranging pixels 3d that detect ranging light. The pixel array unit 4 includes an imaging pixel array unit 4p that includes a plurality of imaging pixels 3p arranged at least in the column direction (Y-axis direction), and a ranging pixel array unit 4d that includes a plurality of ranging pixels 3d arranged at least in the column direction. The circuit unit 5 includes an imaging circuit unit 5p electrically connected to the imaging pixel array unit 4p and a ranging circuit unit 5d electrically connected to the ranging pixel array unit 4d. It is possible to realize a photodetector 100 having a chip configuration capable of imaging and distance measurement.

[0296] 4 and 6, the ranging circuit unit 5d includes a pixel circuit 50d that generates an electrical signal in response to the generation of electric charges in the photoelectric conversion unit 120 of the ranging pixel 3d, and the pixel circuit 50d of the ranging circuit unit 5d may overlap the ranging pixel array unit 4d in a plan view (when viewed in the Z-axis direction). This allows, for example, the transistor TR (FIG. 4) of the pixel circuit 50d to be located as close as possible to the photoelectric conversion unit 120 of the ranging pixel array unit 4d.

[0297] 3 and 6 , the imaging pixels 3p of the imaging pixel array unit 4p include pixel circuits (transistors TR and floating diffusion FD in FIG. 3 ) that generate electric signals in response to the generation of electric charges in the photoelectric conversion unit 120, and the imaging circuit unit 5p includes conversion circuits 51p that perform AD conversion of signals from the pixel circuits, and the conversion circuits 51p of the imaging circuit unit 5p may overlap the imaging pixel array unit 4p in plan view. This allows the conversion circuits 51p to be located as close as possible to the pixel circuits.

[0298] As described with reference to FIG. 7 and other figures, the imaging pixel array unit 4p and the ranging pixel array unit 4d may be spaced apart from each other in the row direction (X-axis direction). As described with reference to FIG. 10 and other figures, the imaging pixel array unit 4p may be arranged at one end of the chip 1, and the ranging pixel array unit 4d may be arranged at the other end of the chip 1. As described with reference to FIGS. 11 to 13 and other figures, the pixel array unit 4 may include multiple imaging pixel array units 4p and multiple ranging pixel array units 4d. As described with reference to FIGS. 11 and 13 and other figures, the imaging pixel array units 4p and ranging pixel array units 4d may be arranged alternately in the row direction. For example, various floor plans such as these may be adopted.

[0299] As described with reference to Figure 20 etc., the imaging pixel array unit 4p and the ranging pixel array unit 4d are spaced apart from each other in the row direction (X-axis direction), and the photodetector 100 may include a ranging light cut filter 14p provided to cover the imaging pixel array unit 4p and a visible light cut filter 14d provided to cover the ranging pixel array unit 4d. Since the imaging pixel array unit 4p and the ranging pixel array unit 4d are spaced apart, it is easier to arrange the ranging light cut filter 14p and the visible light cut filter 14d that cover them. For example, as described with reference to Figures 33 to 37 etc., the photodetector 100 may include a package 8 that houses the chips 1 and 2, and the ranging light cut filter 14p and the visible light cut filter 14d may be provided in the package 8.

[0300] 16 and other descriptions, the chip 1 includes an optical layer 13 provided so as to cover the photoelectric conversion units 120 (photoelectric conversion layers 12) of the plurality of pixels 3, and the optical layer 13 may include a filter 132 that passes light of a color detected by the imaging pixels 3p in the imaging pixel array unit 4p out of the imaging pixel array unit 4p and the ranging pixel array unit 4d. For example, chips 1 including the imaging pixel array unit 4p and ranging pixel array unit 4d having cross-sectional structures different from each other in this manner can be stacked on the chip 2.

[0301] Various types of diodes can be used as the photoelectric conversion unit 120. For example, as described with reference to Fig. 4 and other figures, the photoelectric conversion unit of the ranging pixel 3d may include at least one of an APD and a SPAD.

[0302] As described with reference to FIG. 17 and other figures, the photoelectric conversion unit 120 of the imaging pixel 3p includes at least one of an APD and a SPAD, and the imaging pixel 3p may include a quench resistor (e.g., a transistor TR-IN) connected to the photoelectric conversion unit 120 to perform recharging to initialize the voltage generated by electrons avalanche-amplified in the photoelectric conversion unit 120. This enables imaging using an APD or a SPAD. As described with reference to FIGS. 25 and 26 and other figures, the imaging circuit unit 5p may include a count circuit 511 that counts pulse signals generated in response to the generation of electric charges in the photoelectric conversion unit 120 of the imaging pixel 3p, and a correction circuit 521 that corrects the count result of the count circuit 511 so as to obtain a signal having a level corresponding to the amount of light incident on the photoelectric conversion unit 120 of the imaging pixel 3p. For example, linear correction increases the likelihood of obtaining a high dynamic range.

[0303] As described with reference to Figures 27 to 29, the imaging pixel array unit 4p may have high resolution, and the ranging pixel array unit 4d may have low resolution. The circuit unit 5 may generate high-resolution point data by associating imaging data obtained based on signals from the imaging pixels 3p with ranging data obtained based on signals from the ranging pixels 3d. This allows for a high-resolution point cloud. The ranging data indicates distance candidate values ​​for each region (e.g., region A1, region A12, region A2) within the detection region A. When ranging data for the same region (e.g., region A12) within the detection region A indicates multiple distance candidate values, the circuit unit 5 may associate ranging data for another region (e.g., region A2) from which imaging data similar to the imaging data for the region in question has been obtained with the imaging data for the region in question. This allows for the search for an appropriate distance candidate value.

[0304] 30 and the like, the imaging circuit unit 5p may add signals from the imaging pixels 3p for multiple frames. For example, even when an APD or a SPAD is used as the photoelectric conversion unit 120 of the imaging pixels 3p, flicker can be suppressed.

[0305] As described above, the imaging pixel array unit 4p and the ranging pixel array unit 4d may be spaced apart. For example, as described with reference to Figures 31 and 32, the imaging pixel array unit 4p and the ranging pixel array unit 4d may be spaced apart from each other in the row direction (X-axis direction), and the distance between the imaging pixel array unit 4p and the ranging pixel array unit 4d may be N pixels (N is an integer greater than or equal to 1). The photodetector 100 includes dummy pixels 3x disposed between the imaging pixel array unit 4p and the ranging pixel array unit 4d. The dummy pixels 3x may have a different structure from the imaging pixels 3p. Placing the dummy pixels 3x to maintain a repeating pattern during manufacturing may improve pixel sensitivity. For example, the dummy pixels 3x may include a photoelectric conversion unit 120 and a light-shielding layer 133 disposed to cover the entire photoelectric conversion unit 120. The imaging pixel 3p includes a lens 131 that focuses incident light on the photoelectric conversion unit 120, while the dummy pixel 3x does not need to include a lens that focuses incident light on the photoelectric conversion unit 120. The absence of a lens can suppress flare reduction.

[0306] The plurality of pixels 3 may include pixels in which a portion of the photoelectric conversion unit 120 is shielded from light. Examples of such pixels include the shielded imaging pixels (imaging pixel 3p-ZAF, imaging pixel 3p-ND) described with reference to FIG. 19 and the like, and the shielded ranging pixels (ranging pixel 3d-ND, ranging pixel 3d-ZAF) described with reference to FIGS. 41 to 63 and the like. These pixels can be used to detect an image plane phase difference or for low-sensitivity detection.

[0307] Distance measurement using image plane phase difference is also possible. As described with reference to Figures 41 to 49, the multiple ranging pixels 3d may include a pair of light-shielded ranging pixels (ranging pixels 3d-ZAF) in which different portions of the photoelectric conversion unit 120 are shielded from light, and the ranging circuit unit 5d may perform image plane phase difference ranging based on the distance between the pair of light-shielded ranging pixels and the light reception level of each of the pair of light-shielded ranging pixels. As described with reference to Figures 50 and 51, the ranging circuit unit 5d may perform short-distance ranging using image plane phase difference ranging and long-distance ranging using the dToF method. This allows for the advantages of both types of ranging to be obtained.

[0308] Various types of pixels 3 can be arranged. For example, as described with reference to Figures 64, 69, and 70, the imaging pixel array unit 4p may include a pixel column made up of imaging pixels 3p that detect light of the same color. As described with reference to Figure 70, the imaging pixel array unit 4p may include a red pixel column made up of imaging pixels 3p-R that detect red light, a green pixel column made up of imaging pixels 3p-G that detect green light, and a blue pixel column made up of imaging pixels 3p-B that detect blue light, and the red pixel column, green pixel column, and blue pixel column may be arranged side by side in the row direction (X-axis direction).

[0309] As described with reference to Figures 64, 71, and 72, the imaging pixels 3p include fully light-shielded imaging pixels (imaging pixels 3p-OPB) in which the entire photoelectric conversion unit 120 is shielded from light, and the fully light-shielded imaging pixels may be arranged on the periphery of the imaging pixel array unit 4p. For example, fully light-shielded pixels can be easily obtained by extending the light-shielding layer 133 arranged around the periphery of the imaging pixel array unit 4p. For example, as described with reference to Figure 72, the imaging pixel array unit 4p may include a pixel column made up of fully light-shielded imaging pixels (imaging pixels 3p-OPB) in which the entire photoelectric conversion unit 120 is shielded from light. Dark current components can be detected for all rows in the same column.

[0310] As described with reference to Figures 64, 73 to 75, 79 to 82, etc., the multiple imaging pixels 3p include imaging pixels 3p for pixel addition, normal pixels (imaging pixels 3p), and light-shielded pixels (imaging pixels 3p-ND) in which part of the photoelectric conversion unit 120 is shielded from light, and the imaging circuit unit 5p generates an image signal for each region within the detection region A (e.g., region A3, region A4, region A5) based on the most sensitive signal that is not saturated among multiple signals with different sensitivities, and the multiple signals with different sensitivities may include a high-sensitivity signal obtained by adding together signals from the imaging pixels for pixel addition, a normal-sensitivity signal that is a signal from the normal pixels, and a low-sensitivity signal that is a signal from the light-shielded pixels. An appropriate image signal can be generated.

[0311] As described with reference to Figures 84 to 97, the circuit unit 5 (e.g., ranging circuit unit 5d) uses a memory unit 55 that stores signals from pixels 3 (e.g., ranging pixels 3d) in multiple pixel columns to add signals from pixels 3 in different pixel columns that detected light from the same portion of the object OBJ (e.g., first portion OBJ10). The memory unit 55 may include multiple memories 550, each of which stores signals from a corresponding pixel 3 among the multiple pixels 3, and may be configured to transfer signals between any two or more memories 550. Increasing the flexibility of signal storage enables efficient TDI operation. For example, the pixels 3 in the multiple pixel columns may include two or more same-color pixels (e.g., ranging pixel 3d-B1 and ranging pixel 3d-B2, ranging pixel 3d-G1 and ranging pixel 3d-G2, ranging pixel 3d-R1 and ranging pixel 3d-R2) that are included in different pixel columns and detect light of the same color, and any one memory 550 may include two or more memories 550 corresponding to the two or more same-color pixels. Furthermore, the pixels 3 in the multiple pixel columns may include two or more different color pixels (for example, ranging pixel 3d-B, ranging pixel 3d-G, ranging pixel 3d-R) that are included in different pixel columns and detect light of different colors, and the arbitrary memory 550 may include two or more memories 550 corresponding to the two or more different color pixels. Signal addition between different colors is also possible.

[0312] The signal may be an analog signal or a digital signal. For example, in the latter case, as described with reference to Figures 87 and 88, the circuit unit 5 (e.g., ranging circuit unit 5d) may include a conversion circuit (e.g., conversion circuit 51d) that AD converts signals from pixels 3 (e.g., ranging pixels 3d) in multiple pixel columns, and the memory unit 55 may hold the AD-converted signals.

[0313] As described with reference to FIG. 89 etc., the conversion circuit (e.g., conversion circuit 51d) may include a plurality of conversion units 510, each of which performs AD conversion on a signal from a pixel 3 (e.g., ranging pixel 3d) in a corresponding pixel column among the plurality of pixel columns, and the conversion circuit may be configured to selectively supply a signal from the same pixel 3 to at least two of the plurality of conversion units 510. Furthermore, the memory unit 55 may be configured to selectively supply a signal from the same pixel 3 to at least two of the plurality of memories 550. This further increases the degree of freedom in signal retention.

[0314] As described with reference to Figure 94 etc., the memory unit 55 may include a counter 550a that counts up and holds a signal. As described with reference to Figure 95 etc., the memory unit 55 may include an adder 550b that reads out a signal held in the memory 550, adds it to another signal, and writes the result into the memory 550. For example, signals can be added in this manner.

[0315] As described with reference to Fig. 5 etc., the photodetector 100 may include a scanning mechanism 9 that line-scans the detection area A so that light from the detection area A is incident on a plurality of imaging pixels (pixel rows) arranged in the column direction (Y-axis direction). This enables imaging and distance measurement using a one-dimensional scanner method.

[0316] As described with reference to Figures 98 to 103, the imaging pixels 3p include color pixels (imaging pixels 3p-RGB) that detect light of corresponding colors and fully light-shielded imaging pixels (imaging pixels 3p-OPB) in which the entire photoelectric conversion unit 120 is shielded from light. The scanning mechanism 9 may perform line scanning of the detection region A so that light from the detection region A is incident on the color pixels on one of the forward and backward scanning paths (e.g., the forward path), and light from the detection region A is incident on the fully light-shielded imaging pixels on the other path (e.g., the backward path). Dark current may be detected using one of the paths and used for noise reduction. For example, the imaging circuit unit 5p may subtract a signal from the fully light-shielded imaging pixels (imaging pixels 3p-OPB) obtained by scanning the other path from a signal from the color pixels (imaging pixels 3p-RGB) obtained by scanning one path.

[0317] A two-chip configuration of the sensor as described with reference to Figure 104 etc. is also possible. The light detection device 100 may include an imaging chip (chip 1-p) provided with imaging pixels 3p (imaging pixel array section 4p) that detect visible light, a ranging chip (chip 1-d) provided with ranging pixels 3d (ranging pixel array section 4d) that detect ranging light, and an optical system (e.g., wavelength-selective mirror 94, lens 95, lens 96) that guides visible light from the detection area A to the imaging chip and guides ranging light to the ranging chip.

[0318] 3. Application Examples Some application examples of the photodetector device 100 described above will be described.

[0319] 3.1 Application Examples to Mobile Bodies The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0320] FIG. 105 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology of the present disclosure can be applied.

[0321] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 105, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0322] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0323] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0324] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

[0325] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0326] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0327] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.

[0328] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0329] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0330] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to vehicle occupants or the outside of the vehicle. In the example of Fig. 105, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0331] FIG. 106 is a diagram showing an example of the installation position of the imaging unit 12031.

[0332] In FIG. 106, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0333] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0334] 106 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

[0335] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.

[0336] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation.

[0337] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0338] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0339] The above describes an example of a vehicle control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the imaging unit 12031 of the above-described configuration. This can efficiently provide both imaging and ranging functions.

[0340] 3.2 Other Application Examples Applications other than to mobile objects are also possible. One example of another application is a wearable device. For example, the light detection device 100 may be mounted on smart glasses.

[0341] The effects described in this disclosure are merely examples and are not limited to the disclosed contents. Other effects may also be obtained.

[0342] Although the embodiments of the present disclosure have been described above, the technical scope of the present disclosure is not limited to the above-described embodiments, and various modifications are possible within the scope of the gist of the present disclosure. Furthermore, components of different embodiments and modifications may be combined as appropriate.

[0343] Note that the present technology may also be configured as follows: (1) A photodetector device comprising: a first chip and a second chip stacked to be electrically connected to each other; a pixel array unit provided on the first chip and including a plurality of pixels each including a photoelectric conversion unit; and a circuit unit provided on the second chip and electrically connected to the pixel array unit of the first chip, wherein the plurality of pixels include imaging pixels that detect visible light and ranging pixels that detect ranging light, wherein the pixel array unit includes: an imaging pixel array unit including at least a plurality of the imaging pixels arranged in a column direction, and a ranging pixel array unit including at least a plurality of the ranging pixels arranged in the column direction, and the circuit unit includes: an imaging circuit unit electrically connected to the imaging pixel array unit, and a ranging circuit unit electrically connected to the ranging pixel array unit. (2) The photodetector according to (1), wherein the ranging circuit section includes a pixel circuit that generates an electric signal in response to generation of electric charges in a photoelectric conversion section of the ranging pixel, and the pixel circuit of the ranging circuit section overlaps with the ranging pixel array section in a planar view. (3) The photodetector according to (1) or (2), wherein the imaging pixels of the imaging pixel array section include a pixel circuit that generates an electric signal in response to generation of electric charges in a photoelectric conversion section, and the imaging circuit section includes a conversion circuit that performs AD conversion of the signal from the pixel circuit, and the conversion circuit of the imaging circuit section overlaps with the imaging pixel array section in a planar view. (4) The photodetector according to any of (1) to (3), wherein the imaging pixel array section and the ranging pixel array section are arranged at an interval from each other in the row direction. (5) The photodetector according to (4), wherein the imaging pixel array section is arranged at one end of the first chip, and the ranging pixel array section is arranged at the other end of the first chip. (6) The photodetector according to any one of (1) to (4), wherein the pixel array section includes: a plurality of the imaging pixel array sections; and a plurality of the ranging pixel array sections. (7) The photodetector according to (6), wherein the imaging pixel array sections and the ranging pixel array sections are arranged alternately in the row direction.(8) The photodetector according to any one of (1) to (7), wherein the imaging pixel array unit and the ranging pixel array unit are arranged at an interval in the row direction, and the photodetector includes: a ranging light cut filter provided so as to cover the imaging pixel array unit; and a visible light cut filter provided so as to cover the ranging pixel array unit. (9) The photodetector according to (8), further including a package that houses the first chip and the second chip, and the ranging light cut filter and the visible light cut filter are provided in the package. (10) The photodetector according to any one of (1) to (9), wherein the first chip includes an optical layer provided so as to cover photoelectric conversion units of the plurality of pixels, and the optical layer includes a filter that passes light of a color detected by the imaging pixels in the imaging pixel array unit of the imaging pixel array unit and the ranging pixel array unit. (11) The photodetector according to any one of (1) to (10), wherein the photoelectric conversion unit of the ranging pixel includes at least one of an APD (Avalanche Photo Diode) and a SPAD (Single Photon Avalanche Diode). (12) The photodetector according to any one of (1) to (11), wherein the photoelectric conversion unit of the imaging pixel includes at least one of an APD and a SPAD, and the imaging pixel includes a quench resistor connected to the photoelectric conversion unit so as to perform recharging to initialize a voltage due to electrons avalanche amplified in the photoelectric conversion unit. (13) The photodetector according to any one of (1) to (12), wherein the imaging circuit unit includes: a count circuit that counts pulse signals generated in response to generation of electric charges in the photoelectric conversion unit of the imaging pixel; and a correction circuit that corrects the count result of the count circuit so as to obtain a signal having a level corresponding to the amount of light incident on the photoelectric conversion unit of the imaging pixel.(14) The photodetector according to any one of (1) to (13), wherein the imaging pixel array unit has high resolution, the ranging pixel array unit has low resolution, and the circuit unit generates high-resolution point data by associating imaging data obtained based on signals from the imaging pixels with ranging data obtained based on signals from the ranging pixels. (15) The photodetector according to (14), wherein the ranging data indicates distance candidate values ​​for each region in the detection region, and when the ranging data indicates multiple distance candidate values ​​for the same region in the detection region, the circuit unit associates ranging data of another region for which imaging data similar to the imaging data of the region has been obtained with the imaging data of the region. (16) The photodetector according to any one of (1) to (15), wherein the photoelectric conversion units of the imaging pixels include at least one of an APD and a SPAD, and the imaging circuit unit adds signals from the imaging pixels for multiple frames. (17) The photodetector according to any one of (1) to (16), wherein the imaging pixel array unit and the ranging pixel array unit are arranged at an interval in the row direction, and the separation distance between the imaging pixel array unit and the ranging pixel array unit is N pixels (N is an integer equal to or greater than 1). (18) The photodetector according to (17), further comprising a dummy pixel provided between the imaging pixel array unit and the ranging pixel array unit, the dummy pixel having a structure different from that of the imaging pixel. (19) The photodetector according to (18), wherein the dummy pixel includes: a photoelectric conversion unit; and a light-shielding layer provided so as to cover the entire photoelectric conversion unit. (20) The photodetector according to (18) or (19), wherein the imaging pixel includes a lens that focuses incident light on the photoelectric conversion unit, and the dummy pixel does not include a lens that focuses incident light on the photoelectric conversion unit. (21) The light detection device according to any one of (1) to (20), wherein the plurality of pixels include a pixel in which a part of a photoelectric conversion unit is shielded from light.(22) The photodetector according to any one of (1) to (21), wherein the plurality of ranging pixels include a pair of light-shielded ranging pixels in which different portions of their photoelectric conversion units are shielded from light, and the ranging circuit unit performs image plane phase difference ranging based on the distance between the pair of light-shielded ranging pixels and the light reception level of each of the pair of light-shielded ranging pixels. (23) The photodetector according to (22), wherein the ranging circuit unit performs short-distance ranging using the image plane phase difference ranging, and performs long-distance ranging using a dToF (direct Time of Flight) method. (24) The photodetector according to any one of (1) to (23), wherein the imaging pixel array unit includes a pixel row made up of imaging pixels that detect light of the same color. (25) The photodetector according to (24), wherein the imaging pixel array section includes a red pixel column consisting of imaging pixels that detect red light, a green pixel column consisting of imaging pixels that detect green light, and a blue pixel column consisting of imaging pixels that detect blue light, and the red pixel column, the green pixel column, and the blue pixel column are arranged side by side in the row direction. (26) The photodetector according to any of (1) to (25), wherein the imaging pixels include fully light-shielded imaging pixels in which the entire photoelectric conversion section is shielded from light, and the fully light-shielded imaging pixels are arranged in the outer periphery of the imaging pixel array section. (27) The photodetector according to any of (1) to (26), wherein the imaging pixel array section includes a pixel column consisting of fully light-shielded imaging pixels in which the entire photoelectric conversion section is shielded from light. (28) The photodetector according to any one of (1) to (27), wherein the plurality of imaging pixels include imaging pixels for pixel addition, normal pixels, and light-shielding pixels in which a portion of the photoelectric conversion unit is shielded from light; the imaging circuit unit generates an image signal for each region within the detection region based on a signal that is not saturated and has the highest sensitivity among a plurality of signals with different sensitivities; and the plurality of signals with different sensitivities include a high-sensitivity signal obtained by adding together signals from the imaging pixels for pixel addition, a normal-sensitivity signal that is a signal from the normal pixels, and a low-sensitivity signal that is a signal from the light-shielding pixels.(29) The photodetector according to any of (1) to (28), wherein the circuit unit adds signals from pixels in different pixel columns that detected light from the same portion of the object using a memory unit that stores signals from pixels in a plurality of pixel columns, and the memory unit includes a plurality of memories, each storing signals from a corresponding pixel among the plurality of pixels, and is configured to be able to transfer the signals between any two or more memories. (30) The photodetector according to (29), wherein the pixels in the plurality of pixel columns include two or more same-color pixels that are included in different pixel columns and detect light of the same color, and the any two or more memories correspond to the two or more same-color pixels. (31) The photodetector according to (29) or (30), wherein the pixels in the plurality of pixel columns include two or more different-color pixels that are included in different pixel columns and detect light of different colors, and the any two or more memories correspond to the two or more different-color pixels. (32) The photodetector according to any one of (29) to (31), wherein the circuit unit includes a conversion circuit that performs AD conversion on signals from pixels in the plurality of pixel columns, and the memory unit holds the AD-converted signals. (33) The photodetector according to (32), wherein the conversion circuit includes a plurality of conversion units, each of which performs AD conversion on signals from pixels in a corresponding pixel column among the plurality of pixel columns, and the conversion circuit is configured to be able to selectively supply a signal from the same pixel to one of at least two of the plurality of conversion units. (34) The photodetector according to (32) or (33), wherein the conversion circuit includes a plurality of conversion units, each of which performs AD conversion on signals from pixels in a corresponding pixel column among the plurality of pixel columns, and the memory unit is configured to be able to selectively supply a signal from the same pixel to one of at least two of the plurality of memories. (35) The photodetector according to any one of (29) to (34), wherein the memory unit includes a counter that counts up and holds a signal. (36) The photodetector according to any one of (29) to (34), wherein the memory unit includes an adder that reads out a signal held in the memory, adds the signal to another signal, and writes the result into the memory.(37) The photodetector according to any one of (1) to (36), further comprising a scanning mechanism that line-scans the detection region so that light from the detection region is incident on a plurality of imaging pixels arranged in the column direction. (38) The photodetector according to (37), wherein the imaging pixels include color pixels that detect light of corresponding colors and fully light-shielded imaging pixels whose photoelectric conversion units are entirely shielded from light, and the scanning mechanism line-scans the detection region so that light from the detection region is incident on the color pixels on one of an outward and return scanning path, and light from the detection region is incident on the fully light-shielded imaging pixels on the other path. (39) The photodetector according to (38), wherein the imaging circuit unit subtracts signals from the fully light-shielded imaging pixels obtained by scanning on the other path from signals from the color pixels obtained by scanning on the one path. (40) An optical detection device comprising: an imaging chip provided with imaging pixels that detect visible light; a ranging chip provided with ranging pixels that detect ranging light; and an optical system that guides the visible light from a detection region to the imaging chip and guides the ranging light to the ranging chip.

[0344] 100 Photodetector 1 Chip 1a Bonding surface 1-1 Chip 1-2 Chip 1-d Chip 1-p Chip 2 Chip 2a Bonding surface 11 Wiring layer 111 Wiring 12 Photoelectric conversion layer 12-1 Photoelectric conversion layer 12-2 Photoelectric conversion layer 120 Photoelectric conversion section 120c Cathode 13 Optical layer 131 Lens 132 Filter 132B Filter 132Cy Filter 132G Filter 132IR Filter 132R Filter 132Y Filter 133 Light-shielding layer 14 Cut filter 14d Visible light cut filter 14p Distance measurement light cut filter 21 Wiring layer 211 Wiring 3 Pixel 3d Distance measurement pixel 3d-B Distance measurement pixel 3d-G Distance measurement pixel 3d-ND ranging pixel 3d-R ranging pixel 3d-W ranging pixel 3d-ZAF ranging pixel 3g color center 3p imaging pixel 3p-B imaging pixel 3p-C imaging pixel 3p-Cy imaging pixel 3p-G imaging pixel 3p-ND imaging pixel 3p-OPB imaging pixel 3p-R imaging pixel 3p-RGB imaging pixel 3p-XT imaging pixel 3p-Y imaging pixel 3p-ZAF imaging pixel 3x dummy pixel 4 pixel array section 4d ranging pixel array section 4p imaging pixel array section 5 circuit section 5i IF 5d ranging circuit section 5p imaging circuit section 50d pixel circuit 50p pixel circuit 510 conversion section 511 count circuit 51d conversion circuit 51p Conversion circuit 521 Correction circuit 52d Signal processing circuit 52p Signal processing circuit 55 Memory section550 Memory 550a Counter 550b Adder 6 Thermometer 7 Bias 8 Package 81 Substrate 82 Die bonding material 83 Molding resin 84 Sealing resin 85 Glass 9 Scanning mechanism 90 Housing 91 Laser 92 Lens 93 Mirror 94 Wavelength selection mirror 95 Lens A Detection area A1 Area A2 Area A3 Area A4 Area A5 Area A ｌｉｎｅ Line area M Frame memory OBJ Object OBJ10 First part OBJ20 Second part PT1 Pattern PT2 Pattern PT3 Pattern PT4 Pattern SB Solder ball SL Signal line TR Transistor TR-AMP Transistor TR-IN Transistor TR-INV Transistor TR-RST Transistor TR-SEL Transistor TR-TG Transistor W Wire

Claims

1. A photodetector comprising: a first chip and a second chip stacked so as to be electrically connected to each other; a pixel array section provided on the first chip and including a plurality of pixels each including a photoelectric conversion section; and a circuit section provided on the second chip and electrically connected to the pixel array section of the first chip, wherein the plurality of pixels include imaging pixels that detect visible light and ranging pixels that detect ranging light, and the pixel array section includes: an imaging pixel array section including a plurality of the imaging pixels arranged at least in the column direction, and a ranging pixel array section including a plurality of the ranging pixels arranged at least in the column direction, and the circuit section includes: an imaging circuit section electrically connected to the imaging pixel array section, and a ranging circuit section electrically connected to the ranging pixel array section.

2. The photodetector according to claim 1, wherein the ranging circuit section includes a pixel circuit that generates an electrical signal in response to generation of electric charges in the photoelectric conversion section of the ranging pixel, and when viewed in a plan view, the pixel circuit of the ranging circuit section overlaps with the ranging pixel array section.

3. The photodetector according to claim 1, wherein the imaging pixels of the imaging pixel array unit include pixel circuits that generate electrical signals in response to generation of electric charges in a photoelectric conversion unit, the imaging circuit unit includes a conversion circuit that performs AD conversion of the signals from the pixel circuits, and when viewed in a plane, the conversion circuit of the imaging circuit unit overlaps with the imaging pixel array unit.

4. The photodetector according to claim 1, wherein the imaging pixel array section and the ranging pixel array section are arranged at intervals in the row direction.

5. The photodetector according to claim 4, wherein the imaging pixel array section is arranged at one end of the first chip, and the ranging pixel array section is arranged at the other end of the first chip.

6. The photodetector according to claim 1, wherein the pixel array section includes: a plurality of the imaging pixel array sections; and a plurality of the ranging pixel array sections.

7. The photodetector according to claim 6, wherein the imaging pixel array section and the ranging pixel array section are arranged alternately in the row direction.

8. The photodetector according to claim 1, wherein the imaging pixel array section and the ranging pixel array section are arranged at intervals in the row direction, and the photodetector comprises: a ranging light cut filter arranged to cover the imaging pixel array section; and a visible light cut filter arranged to cover the ranging pixel array section.

9. The photodetector according to claim 8, further comprising a package that houses the first chip and the second chip, and the distance measurement light cut filter and the visible light cut filter are provided in the package.

10. The photodetector device of claim 1, wherein the first chip includes an optical layer provided to cover the photoelectric conversion units of the plurality of pixels, and the optical layer includes a filter that passes light of a color detected by the imaging pixels in the imaging pixel array unit of the imaging pixel array unit and the ranging pixel array unit.

11. The photodetector according to claim 1, wherein the photoelectric conversion unit of the ranging pixel includes at least one of an APD (Avalanche Photo Diode) and a SPAD (Single Photon Avalanche Diode).

12. The photodetector according to claim 1, wherein the photoelectric conversion unit of the imaging pixel includes at least one of an APD and a SPAD, and the imaging pixel includes a quench resistance element connected to the photoelectric conversion unit so as to perform recharging to initialize a voltage generated by electrons avalanche-amplified in the photoelectric conversion unit.

13. The photodetector according to claim 1, wherein the imaging circuit section includes: a count circuit that counts pulse signals generated in response to the generation of electric charges in the photoelectric conversion section of the imaging pixel; and a correction circuit that corrects the count result of the count circuit so as to obtain a signal having a level corresponding to the amount of light incident on the photoelectric conversion section of the imaging pixel.

14. The optical detection device of claim 1, wherein the imaging pixel array section has high resolution, the ranging pixel array section has low resolution, and the circuit section generates high-resolution point data by associating imaging data obtained based on signals from the imaging pixels with ranging data obtained based on signals from the ranging pixels.

15. The optical detection device described in claim 14, wherein the distance measurement data indicates distance candidate values ​​for each area within the detection area, and when the distance measurement data indicates multiple distance candidate values ​​for the same area within the detection area, the circuit unit associates distance measurement data for another area from which imaging data similar to the imaging data for the area has been obtained with the imaging data for the area.

16. The photodetector according to claim 1, wherein the photoelectric conversion unit of the imaging pixel includes at least one of an APD and a SPAD, and the imaging circuit unit adds signals from the imaging pixel for a plurality of frames.

17. The photodetector device according to claim 1, wherein the imaging pixel array section and the ranging pixel array section are arranged at a distance from each other in the row direction, and the separation distance between the imaging pixel array section and the ranging pixel array section is N pixels (N is an integer equal to or greater than 1).

18. The photodetection device according to claim 17, further comprising dummy pixels provided between the imaging pixel array section and the ranging pixel array section, the dummy pixels having a structure different from that of the imaging pixels.

19. The photodetector according to claim 18, wherein the dummy pixel includes a photoelectric conversion unit and a light-shielding layer provided so as to cover the entire photoelectric conversion unit.

20. The photodetector according to claim 18, wherein the imaging pixels include lenses that focus incident light onto photoelectric conversion units, and the dummy pixels do not include lenses that focus incident light onto photoelectric conversion units.

21. The photodetector according to claim 1, wherein the plurality of pixels include a pixel in which a part of a photoelectric conversion unit is shielded from light.

22. The optical detection device of claim 1, wherein the plurality of ranging pixels include a pair of light-shielded ranging pixels in which different portions of the photoelectric conversion section are shielded from light, and the ranging circuit section performs image plane phase difference ranging based on the distance between the pair of light-shielded ranging pixels and the light reception level of each of the pair of light-shielded ranging pixels.

23. The optical detection device according to claim 22, wherein the distance measurement circuit performs short-distance distance measurement using the image plane phase difference distance measurement, and performs long-distance distance measurement using a dToF (direct Time of Flight) method.

24. The photodetector according to claim 1, wherein the imaging pixel array section includes a pixel row made up of imaging pixels that detect light of the same color.

25. The photodetector device according to claim 24, wherein the imaging pixel array section includes a red pixel column made up of imaging pixels that detect red light, a green pixel column made up of imaging pixels that detect green light, and a blue pixel column made up of imaging pixels that detect blue light, and the red pixel column, the green pixel column, and the blue pixel column are arranged side by side in the row direction.

26. The light detection device according to claim 1, wherein the imaging pixels include fully light-shielded imaging pixels in which the entire photoelectric conversion section is shielded from light, and the fully light-shielded imaging pixels are arranged on the outer periphery of the imaging pixel array section.

27. The photodetector according to claim 1, wherein the imaging pixel array section includes a pixel row made up of fully light-shielded imaging pixels whose photoelectric conversion sections are entirely shielded from light.

28. The photodetector according to claim 1, wherein the plurality of imaging pixels include imaging pixels for pixel addition, normal pixels, and light-shielding pixels in which a portion of the photoelectric conversion unit is light-shielded; the imaging circuit unit generates an image signal for each region within the detection region based on a signal that is not saturated and has the highest sensitivity among a plurality of signals with different sensitivities; and the plurality of signals with different sensitivities include a high-sensitivity signal obtained by adding together signals from the imaging pixels for pixel addition, a normal-sensitivity signal that is a signal from the normal pixels, and a low-sensitivity signal that is a signal from the light-shielding pixels.

29. The photodetection device according to claim 1, wherein the circuit section uses a memory section that holds signals from pixels in multiple pixel columns to add up signals from pixels in different pixel columns that detect light from the same part of the object, and the memory section includes multiple memories, each of which holds a signal from a corresponding pixel among the multiple pixels, and is configured to be able to transfer the signals between any two or more of the memories.

30. The photodetection device according to claim 29, wherein the pixels in the plurality of pixel columns include two or more same-color pixels that are included in different pixel columns and detect light of the same color, and the arbitrary memory includes two or more memories corresponding to the two or more same-color pixels.

31. The photodetection device according to claim 29, wherein the pixels in the plurality of pixel columns include two or more different color pixels that are included in different pixel columns and detect light of different colors, and the arbitrary memory includes two or more memories corresponding to the two or more different color pixels.

32. The photodetector according to claim 29, wherein the circuit section includes a conversion circuit that performs AD conversion on signals from pixels in the plurality of pixel columns, and the memory section holds the AD converted signals.

33. The photodetector device according to claim 32, wherein the conversion circuit includes a plurality of conversion units, each of which performs AD conversion on a signal from a pixel in a corresponding pixel column among the plurality of pixel columns, and the conversion circuit is configured to be able to selectively supply a signal from the same pixel to one of at least two conversion units among the plurality of conversion units.

34. The photodetector device according to claim 32, wherein the conversion circuit includes a plurality of conversion units each performing AD conversion on a signal from a pixel in a corresponding pixel column among the plurality of pixel columns, and the memory unit is configured to be able to selectively supply a signal from the same pixel to one of at least two memories among the plurality of memories.

35. The photodetector according to claim 29, wherein the memory section includes a counter that counts up and holds a signal.

36. The photodetector according to claim 29, wherein the memory section includes an adder that reads out a signal held in the memory, adds the signal to another signal, and writes the result into the memory.

37. The photodetection device according to claim 1, further comprising a scanning mechanism that line-scans the detection area so that light from the detection area is incident on the plurality of imaging pixels arranged in the column direction.

38. The optical detection device described in claim 37, wherein the imaging pixels include color pixels that detect light of corresponding colors and fully light-shielded imaging pixels in which the entire photoelectric conversion section is shielded from light, and the scanning mechanism line-scans the detection region so that light from the detection region is incident on the color pixels on one of the forward and backward scanning paths, and light from the detection region is incident on the fully light-shielded imaging pixels on the other path.

39. The light detection device according to claim 38, wherein the imaging circuit section subtracts the signal from the all-light-shielded imaging pixel obtained by scanning the other path from the signal from the color pixel obtained by scanning the one path.

40. An optical detection device comprising: an imaging chip provided with imaging pixels that detect visible light; a ranging chip provided with ranging pixels that detect ranging light; and an optical system that guides the visible light from a detection area to the imaging chip and guides the ranging light to the ranging chip.

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