Apparatus for detecting leakage of molten polysilicon

Abstract

The present disclosure relates to an apparatus for detecting leakage of molten polysilicon. According to an embodiment of the present disclosure, the apparatus for detecting leakage of molten polysilicon may comprise: a crucible for melting polysilicon; a heater for heating the crucible; a tray disposed underneath the crucible to accommodate molten polysilicon that has flowed out from the crucible; and a load cell for detecting the weight of the tray.

Description

Device for detecting the leakage of molten polysilicon

[0001] The present disclosure relates to a device for detecting the outflow of molten polysilicon.

[0002] Single crystal silicon is used as the basic material for most semiconductor components, and these materials are manufactured into single crystals with high purity, and one of these manufacturing methods is the Czochralski process.

[0003] The Czochralski method involves placing solid polysilicon material in a crucible within a chamber, and using a heater to heat the susceptor to melt the silicon. A single crystal seed is then pulled upwards by a wire while in contact with the molten silicon, and a crown process is used to increase the diameter of the ingot until it approaches the target diameter, thereby growing an ingot with a predetermined diameter. One of these Czochralski methods, the continuous growth Czochralski method (CCz), continuously injects solid polysilicon or molten silicon into the crucible to replenish the consumed molten silicon, thereby continuously growing the ingot.

[0004] However, there is a problem that molten polysilicon melted by a heater in a crucible may leak out of the crucible due to breakage, overflow, and backflow.

[0005] Accordingly, there is a need for research into technology that can immediately detect a leak of molten polysilicon from a crucible, notify workers, and take preemptive measures.

[0006] The background technology described above is technical information that the inventor possessed for the purpose of deriving the present invention or acquired in the process of deriving the present invention, and cannot necessarily be considered as publicly known technology disclosed to the general public prior to the application for the present invention.

[0007] The present disclosure provides a device for detecting the leakage of molten polysilicon. The problems addressed by the present invention are not limited to those mentioned above. Other problems and advantages of the present invention, not mentioned above, can be understood through the following description and will be more clearly understood through examples of the present invention. Furthermore, it will be appreciated that the problems and advantages addressed by the present invention can be realized by the means and combinations thereof set forth in the claims.

[0008] As a technical means for achieving the above-described technical task, the first aspect of the present disclosure may include a device for detecting the outflow of molten polysilicon, which may include a crucible for melting polysilicon, a heater for heating the crucible, a tray disposed below the crucible for receiving molten polysilicon outflowed from the crucible, and a load cell for detecting the weight of the tray.

[0009] In addition, other methods for implementing the present invention, other systems, and computer-readable recording media storing a computer program for executing the method may be further provided.

[0010] Other aspects, features and advantages other than those described above will become apparent from the following drawings, claims and detailed description of the invention.

[0011] According to the problem solving means of the present disclosure described above, in the present disclosure, immediate detection is possible when molten polysilicon flows out from the crucible.

[0012] In addition, the present disclosure enables immediate response to a spill by generating an alarm and cutting off the power supply upon detection of a spill of molten polysilicon.

[0013] In addition, the present disclosure can prevent damage to devices used for growing silicon single crystals due to outflow of molten polysilicon.

[0014] FIG. 1 is an exemplary drawing of a device for detecting the outflow of molten polysilicon according to one embodiment.

[0015] FIG. 2 is an exemplary drawing for explaining an outlet disposed on one side of a crucible according to one embodiment.

[0016] FIG. 3 is an exemplary drawing for explaining the orthogonal projection of a crucible, an outlet, and a tray according to one embodiment.

[0017] FIG. 4 is an exemplary drawing of a device for detecting the outflow of molten polysilicon including a control unit according to one embodiment.

[0018] FIG. 5 is a flowchart illustrating a method for a control unit to control an alarm generating unit and a power supply unit according to one embodiment.

[0019] The present disclosure relates to a device for detecting the outflow of molten polysilicon. According to one embodiment of the present disclosure, the device for detecting the outflow of molten polysilicon may include a crucible for melting polysilicon, a heater for heating the crucible, a tray disposed below the crucible for receiving molten polysilicon outflowed from the crucible, and a load cell for detecting the weight of the tray.

[0020] Additionally, the device may further include a control unit that controls the operation of the leak detection device according to the weight detected by the load cell.

[0021] Additionally, the device may include an alarm generating unit that is connected to the control unit and generates an alarm.

[0022] In addition, the device may include a solid polysilicon input unit that supplies the polysilicon to the crucible; and a power supply unit that is connected to the solid polysilicon input unit, the heater, and the control unit and supplies power to the solid polysilicon input unit and the heater.

[0023] In addition, the control unit controls the alarm generating unit so that the alarm generating unit generates a first alarm when the weight detected by the load cell is greater than or equal to a first threshold value, and controls the alarm generating unit so that the alarm generating unit generates a second alarm when the weight detected by the load cell is greater than or equal to a second threshold value, and the first alarm and the second alarm may have different sound effects.

[0024] Additionally, the control unit can control the power supply unit to cut off power supplied to the solid polysilicon input unit and the heater when the weight detected by the load cell is greater than or equal to a third threshold value.

[0025] Additionally, the first threshold value may be 3% of the weight of the polysilicon supplied to the crucible, and the second threshold value may be 5% of the weight of the polysilicon supplied to the crucible.

[0026] Additionally, the third threshold value may be 10% of the weight of the polysilicon supplied to the crucible.

[0027] In addition, the crucible further includes a chamber disposed at the bottom thereof and a hot zone structure of insulating material for protecting the chamber, and the tray can cover the hot zone structure between the crucible and the hot zone structure.

[0028] In addition, the crucible includes an outlet extending outward from one side of the crucible, and the end of the outlet is positioned so as to face downward, and the position of the outlet may be located upward based on the central height of the crucible.

[0029] Additionally, the orthogonal projection of the tray may include an orthogonal projection of the crucible and the outlet.

[0030] The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments described in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments presented below, but may be implemented in various different forms, and it should be understood that it includes all transformations, equivalents, and substitutes included in the spirit and technical scope of the present invention. The embodiments presented below are provided to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. In describing the present invention, if a detailed description of a related known technology is judged to obscure the gist of the present invention, the detailed description thereof will be omitted.

[0031] The terminology used in this application is only used to describe specific embodiments and is not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, it should be understood that the terms "comprise" or "have" indicate the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, but do not preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0032] Some embodiments of the present disclosure may be represented by functional block configurations and various processing steps. Some or all of these functional blocks may be implemented by various hardware and / or software configurations that perform specific functions. For example, the functional blocks of the present disclosure may be implemented by one or more microprocessors or by circuit configurations for a given function. Furthermore, for example, the functional blocks of the present disclosure may be implemented in various programming or scripting languages. The functional blocks may be implemented by algorithms that execute on one or more processors. Furthermore, the present disclosure may employ conventional techniques for electronic configuration, signal processing, and / or data processing. Terms such as "mechanism," "element," "means," and "configuration" may be used broadly and are not limited to mechanical and physical configurations.

[0033] Additionally, the connecting lines or connecting members between components depicted in the drawings are merely exemplary representations of functional connections and / or physical or circuit connections. In an actual device, connections between components may be represented by various functional connections, physical connections, or circuit connections that may be replaced or added.

[0034] In this specification, when describing a leak detection device according to an embodiment of the present invention, components that are not related to the content of the invention are not depicted in detail or are omitted for simplicity of the drawing, and the leak detection device according to the present invention is described focusing on contents related to the spirit of the invention.

[0035] The present disclosure will be described in detail with reference to the attached drawings below.

[0036] FIG. 1 is an exemplary drawing of a device for detecting the outflow of molten polysilicon according to one embodiment, FIG. 2 is an exemplary drawing for explaining an outflow portion arranged on one side of a crucible according to one embodiment, and FIG. 3 is an exemplary drawing for explaining an orthogonal projection of a crucible, an outflow portion, and a tray according to one embodiment.

[0037] First, referring to FIG. 1, a molten polysilicon outflow detection device (100) may include a crucible (10) for melting solid polysilicon, a heater (20) for heating the crucible (10), a tray (30) disposed at the bottom of the crucible (10) for receiving molten polysilicon outflowing from the crucible (10), and a load cell (40) for detecting the weight of the tray (30).

[0038] The crucible (10) can accommodate molten polysilicon. In addition, the crucible (10) can generally be formed in a reverse dome shape. In addition, the crucible (10) can be formed in various shapes, such as a cylindrical shape.

[0039] The crucible may be made of quartz material. However, the crucible (10) may be made of various materials that are heat resistant at temperatures of approximately 1400°C or higher and can withstand rapid temperature changes.

[0040] Meanwhile, a support (60) for supporting the crucible (10) may be placed on the lower side of the crucible (10). For example, the support (60) may be implemented in a generally cylindrical shape. The upper end of the support (60) may be implemented in a shape corresponding to the lower end of the crucible, so that the crucible (10) may be placed on the upper end of the support (60).

[0041] Additionally, an outlet (11) for discharging molten polysilicon to the outside of the crucible (10) may be located on one side of the crucible (10).

[0042] The outlet (11) is arranged on one side of the crucible (10) so that the molten polysilicon contained in the crucible (10) can flow out to the single crystal growth furnace (50). At this time, the side of the outlet (11) that comes into contact with the crucible (10) is referred to as the first end, and the side opposite to the first end is referred to as the second end.

[0043] Referring to Fig. 2, molten polysilicon must be filled to a predetermined height based on the height of the crucible (210) before it can be transported to the single crystal growth furnace through the outlet (220). The efficiency of the ingot growth operation using the molten silicon transported to the single crystal growth furnace may vary depending on the height of the arrangement of the outlet (220).

[0044] For example, if the outlet (220) is located at the lower side based on the central height (230) of the crucible (210), the polysilicon melted in the crucible (210) may not fill half of the height of the crucible (210) and may be transported to the single crystal growth furnace. This may increase the time required to melt the solid polysilicon (Melting Time), thereby reducing the efficiency of the ingot growth operation.

[0045] However, in the molten polysilicon outflow detection device, the outflow portion (220) is positioned above the central height (230) of the crucible (210), so that the polysilicon melted in the crucible (210) can be transported to the single crystal growth furnace only when it fills more than half of the height of the crucible (210). Through this, the molten polysilicon outflow detection device can reduce the time required to melt solid polysilicon and increase the efficiency of the ingot growth operation.

[0046] Additionally, the first end (221) of the outlet (220) may be positioned above the second end (222) of the outlet (220). Through this, even without the process of tilting the crucible (210), if a certain amount or more of molten polysilicon is filled in the crucible (210), the molten polysilicon can be transported to the single crystal growth furnace.

[0047] Referring back to FIG. 1, the single crystal growth furnace (50) can grow an ingot using molten polysilicon transported from the crucible (10). For example, the single crystal growth furnace (50) can have an internal space maintained in a vacuum state. The internal space can be configured to allow the ingot to grow.

[0048] A single crystal growth furnace (50) may be equipped with a vacuum pump (not shown) and an inert gas supply unit (not shown). The vacuum pump can maintain a vacuum atmosphere within the internal space. In addition, the inert gas supply unit can supply an inert gas to the internal space.

[0049] The heater (20) can supply heat to the crucible (10) to melt the solid polysilicon inside the crucible (10).

[0050] For example, the heater (20) can supply heat to the crucible (10) using a coil that receives power and generates a magnetic field. In addition, the heater (20) can be implemented not only by induction heating, but also by resistance heating in which power is directly supplied and heat is directly generated.

[0051] Additionally, the heater (20) can be implemented in a form that surrounds the crucible (10).

[0052] A tray (30) is placed at the bottom of the crucible (10) and can accommodate molten polysilicon flowing out of the crucible (10). For example, the tray (30) can be made of a quartz material. In addition, the tray (30) can be made of various materials that are heat-resistant at temperatures of approximately 1400°C or higher and can withstand rapid temperature changes.

[0053] The load cell (40) is connected to the tray (30) and can measure the weight of the tray (30). For example, the load cell (40) can measure the weight of the tray (30) per unit time.

[0054] Previously, the load cell for detecting the outflow of molten polysilicon from the crucible (10) was directly connected to the crucible (10). This had the problem that it was difficult to accurately detect the outflow of molten polysilicon due to the weight change caused by the solid polysilicon fed into the crucible (10) and the molten polysilicon transported to the single crystal growth furnace (50) through the outlet (11) of the crucible (10). However, since the molten polysilicon outflow detection device (100) can immediately detect the weight of the molten silicon dropped onto the tray (30) through the load cell (40), it can accurately detect the outflow of molten polysilicon without considering the weight change caused by the solid polysilicon fed into the crucible (10) and the molten polysilicon transported to the single crystal growth furnace (50) through the outlet (11) of the crucible (10).

[0055] In addition, since a load cell (40) was previously attached to the crucible (10), when molten polysilicon leaked out from the crucible (10), the leaked high-temperature molten polysilicon flowed through the crucible (10) and the support (60) supporting the crucible (10), damaging not only the load cell (40) measuring the weight of the crucible (10) but also the device used for ingot growth. However, the molten polysilicon leak detection device (100) can prevent the occurrence of problems such as those in the past by allowing molten polysilicon leaked out from the crucible (10) or the outlet (11) to be immediately received in the tray (30).

[0056] Referring to FIG. 3, the orthogonal projection of the tray (310) may include the orthogonal projection of the crucible (320) and the outlet (330).

[0057] For example, the outflow of molten polysilicon may occur not only due to breakage of the crucible (320) and overflow from the crucible (320), but also due to breakage of the outlet (330), breakage of the portion connecting the outlet (330) and the crucible (320), and backflow occurring during transport of the molten polysilicon through the outlet (330).

[0058] For example, if the orthogonal projection of the tray (310) includes only the normal projection of the crucible (320) and does not include the orthogonal projection of the outlet (330), there is a problem that the outflow of molten polysilicon generated from the outlet (330) may not be detected.

[0059] However, since the orthogonal projection of the tray (310) of the molten polysilicon leak detection device includes the orthogonal projection of the crucible (320) and the leak portion (330) installed on one side of the crucible (320), it is possible to detect the leak of molten polysilicon occurring in various situations.

[0060] Referring back to FIG. 1, a hot zone structure (70) may be positioned below the tray (30) to protect the device for ingot growth. For example, the hot zone structure (70) may include materials such as an insulating tube, an insulating ring, a top ring, and a heat shield, which are insulating structures positioned to maintain a constant temperature inside the process chamber. If the ingot growth process is repeated multiple times, molten polysilicon may splash or an inert gas containing a quartz component may contact the surface of the process chamber in a gaseous state.

[0061] Since molten polysilicon maintains a temperature of over 1000°C, high temperature-related failures may occur in the process chamber. The hot zone structure (70) may be composed of an insulating material to protect the device for ingot growth, such as the process chamber. For example, the hot zone structure (70) may be composed of a graphite material.

[0062] FIG. 4 is an exemplary drawing of a device for detecting the outflow of molten polysilicon including a control unit according to one embodiment.

[0063] Referring to FIG. 4, the molten polysilicon leak detection device (400) can detect molten polysilicon leaking from the crucible (410). Here, the molten polysilicon leak detection device (400) may be the same device as the molten polysilicon leak detection device (100) of FIG. 1.

[0064] A molten polysilicon leak detection device (400) may include a crucible (410) for melting solid polysilicon, a heater (420) for heating the crucible (410), a tray (430) disposed at the bottom of the crucible (410) for receiving molten polysilicon leaked from the crucible (410), and a load cell (440) for detecting the weight of the tray (430).

[0065] In addition, the molten polysilicon leak detection device (200) may include a solid polysilicon inlet (490) for injecting solid polysilicon into a crucible (410), a control unit (180), a power supply unit (481), and an alarm generating unit (482).

[0066] The crucible (410) can accommodate molten polysilicon. In addition, the crucible (410) can generally be formed in a reverse dome shape. In addition, the crucible (410) can be formed in various shapes, such as a cylindrical shape.

[0067] A support (460) for supporting the crucible (410) may be placed on the lower side of the crucible (410). For example, the support (460) may be implemented in a generally cylindrical shape. The upper end of the support (460) may be implemented in a shape corresponding to the lower end of the crucible, so that the crucible (410) may be placed on the upper end of the support (460).

[0068] Additionally, an outlet (411) for discharging molten polysilicon to the outside of the crucible (410) may be positioned on one side of the crucible (410). The outlet (411) may be positioned on one side of the crucible (410) so that the molten polysilicon contained in the crucible (410) may be discharged to a single crystal growth furnace (450).

[0069] A single crystal growth furnace (450) can grow an ingot using molten polysilicon transported from a crucible (410). For example, the single crystal growth furnace (450) can have an internal space maintained in a vacuum. The internal space can be configured to allow the ingot to grow.

[0070] The heater (420) can supply heat to the crucible (410) to melt the solid polysilicon inside the crucible (410). For example, the heater (420) can supply heat to the crucible (410) using a coil that receives power and generates a magnetic field. In addition, the heater (420) can be implemented not only by induction heating but also by resistance heating in which power is directly supplied and heat is directly generated.

[0071] A tray (430) can be placed at the bottom of the crucible (410) to receive molten polysilicon flowing out from the crucible (410). For example, the tray (430) can be made of a quartz material.

[0072] The load cell (440) can be connected to the tray (430) and measure the weight of the tray (430). For example, the load cell (440) can measure the weight of the tray (430) per unit time.

[0073] For example, the orthogonal projection of the tray (430) may include the orthogonal projection of the crucible (410) and the outlet (411).

[0074] A hot zone structure (470) may be placed at the bottom of the tray (430) to protect the device for ingot growth. For example, the hot zone structure (470) may include materials such as an insulating tube, an insulating ring, a top ring, and a heat shield, which are insulating structures placed to maintain a constant temperature inside the process chamber.

[0075] The solid polysilicon input unit (490) can input as much solid polysilicon as required for ingot growth into the crucible (410). For example, the solid polysilicon input unit (490) can include a quantitative supply unit (not shown).

[0076] For example, the quantitative supply unit can measure the weight of solid polysilicon and supply an accurate weight of solid polysilicon to the crucible (410).

[0077] The control unit (480) may be electrically connected to components included in the molten polysilicon leak detection device (00). For example, the control unit (480) may be electrically connected to the solid polysilicon input unit (490), the power supply unit (481), the alarm generating unit (482), and the load cell.

[0078] The control unit (480) can determine the weight of solid polysilicon to be supplied to the crucible (410) by the solid polysilicon input unit (490). In addition, the control unit (480) can receive the weight of the tray (430) detected from the load cell (440). For example, when a change in the weight of the load cell (440) is detected, the control unit (480) can detect the outflow of molten polysilicon from the crucible (410).

[0079] Meanwhile, the control unit (480) may be specifically designed and configured for the present invention, or may be one known and available to those skilled in the computer software field. Examples of the control unit (480) may include not only machine language codes generated by a compiler, but also high-level language codes that can be executed by a computer using an interpreter or the like.

[0080] The power supply unit (481) can supply power to components included in the polysilicon leak detection device (400). For example, the power supply unit (481) can supply power to the solid polysilicon input unit (490), the heater (420), the load cell (440), the control unit (480), and the single crystal growth furnace (450).

[0081] The alarm generating unit (482) can generate an alarm upon detection of a molten polysilicon leak. For example, a worker can hear an alarm generated from the alarm generating unit (482) and take immediate action upon detection of a molten polysilicon leak.

[0082] For example, the alarm generating unit (482) can generate alarms with various sound effects. For example, different sound effects of alarms can enable a user to recognize the severity of a molten polysilicon leak.

[0083] When the control unit (480) detects the leakage of molten polysilicon, the alarm generating unit (482) can control the alarm generating unit (482) to generate an alarm. For example, the control unit (480) can control the alarm generating unit (482) to generate an alarm having different sound effects depending on the degree of change in the weight of the load cell (440).

[0084] For example, if the weight detected by the load cell (440) exceeds 500 g, the control unit (480) can control the alarm generating unit (482) so that the alarm generating unit (482) generates the first alarm. In addition, if the weight detected by the load cell (440) is 3% or more of the weight of polysilicon supplied to the crucible (410), the control unit (480) can control the alarm generating unit (482) so that the alarm generating unit (482) generates the first alarm.

[0085] For example, if the weight detected by the load cell (440) exceeds 1000 g, the control unit (480) can control the alarm generating unit (482) so that the alarm generating unit (482) generates a second alarm. In addition, if the weight detected by the load cell (440) is 5% or more of the weight of polysilicon supplied to the crucible (410), the control unit (480) can control the alarm generating unit (482) so that the alarm generating unit (482) generates a second alarm.

[0086] Additionally, when the control unit (480) detects the outflow of molten polysilicon, the control unit (480) can control the power supply unit (481) to cut off the power supplied to the solid polysilicon input unit (490) and the heater (420).

[0087] For example, if the weight detected by the load cell (440) is 10% or more of the weight of polysilicon supplied to the crucible (410), the control unit (480) can control the power supply unit (481) to cut off the power supplied by the power supply unit (481) to the solid polysilicon input unit (490) and the heater (420).

[0088] FIG. 5 is a flowchart illustrating a method for a control unit to control an alarm generating unit and a power supply unit according to one embodiment.

[0089] Referring to FIG. 5, the method for detecting the outflow of molten polysilicon is comprised of steps that are processed in time series in the control unit (80) illustrated in FIG. 2. Therefore, even if the content is omitted below, the content described above with respect to the control unit (180) illustrated in FIG. 2 can also be applied to the method for detecting the outflow of molten polysilicon of FIG. 5.

[0090] In step 510, the control unit can control the alarm generating unit to generate a first alarm when the weight detected by the load cell is greater than or equal to a first threshold value.

[0091] For example, if the weight detected by the load cell exceeds 500 g, the control unit can control the alarm generating unit to generate the first alarm.

[0092] Additionally, if the weight detected by the load cell is 3% or more of the weight of polysilicon supplied to the crucible, the control unit can control the alarm generating unit to generate the first alarm.

[0093] In step 520, the control unit can control the alarm generating unit to generate a second alarm when the weight detected by the load cell is greater than or equal to the second threshold value.

[0094] For example, if the weight detected by the load cell exceeds 1000 g, the control unit can control the alarm generating unit to generate a second alarm.

[0095] Additionally, if the weight detected by the load cell is 5% or more of the weight of polysilicon supplied to the crucible, the control unit can control the alarm generating unit to generate a second alarm.

[0096] In step 530, the control unit can control the power supply unit to cut off power supplied to the solid polysilicon input unit and the heater when the weight detected by the load cell is greater than or equal to the third threshold value.

[0097] For example, if the weight detected by the load cell is greater than 10% of the weight of polysilicon supplied to the crucible, the control unit can control the power supply unit to cut off power supplied to the solid polysilicon input unit and heater.

[0098] If melting of the molten polysilicon still occurs after the alarm is generated, the control unit can control the power supply unit to cut off the power supply, thereby preparing for various situations in which no action is taken by the operator due to the leak.

[0099] Unless the steps constituting the method according to the present invention are explicitly described in a specific order or are otherwise described in a different order, the steps may be performed in any appropriate order. The present invention is not necessarily limited to the order in which the steps are described. The use of all examples or exemplary terms (e.g., "for example," etc.) in the present invention is merely intended to illustrate the present invention in detail, and the scope of the present invention is not limited by the examples or exemplary terms unless otherwise defined by the claims. Furthermore, those skilled in the art will appreciate that various modifications, combinations, and variations can be configured according to design conditions and factors within the scope of the appended claims or their equivalents.

[0100] Therefore, the idea of ​​the present invention should not be limited to the embodiments described above, and all scopes equivalent to or equivalently modified from the following claims as well as the claims are considered to fall within the scope of the idea of ​​the present invention.

Claims

1. A crucible for melting polysilicon; A heater for heating the above crucible; A tray placed at the bottom of the crucible to receive molten polysilicon flowing out from the crucible; and A load cell that detects the weight of the above tray; A leak detection device comprising:

2. In paragraph 1, The above device, A control unit that controls the operation of the leak detection device according to the weight detected by the load cell; A leak detection device further comprising:

3. In paragraph 2, The above device, An alarm generating unit connected to the above control unit and generating an alarm; A leak detection device comprising:

4. In paragraph 2, The above device, A solid polysilicon input section for supplying the polysilicon to the crucible; and A power supply unit connected to the solid polysilicon input unit, the heater, and the control unit and supplying power to the solid polysilicon input unit and the heater; A leak detection device comprising:

5. In paragraph 3, The above control unit, If the weight detected by the load cell is greater than or equal to the first threshold value, the alarm generating unit is controlled to generate the first alarm, If the weight detected by the load cell is greater than or equal to the second threshold value, the alarm generating unit is controlled to generate a second alarm. A leak detection device wherein the first alarm and the second alarm have different sound effects.

6. In paragraph 4, The above control unit, A leak detection device that controls the power supply unit to cut off power supplied to the solid polysilicon input unit and the heater when the weight detected by the load cell is greater than or equal to a third threshold value.

7. In paragraph 5, The above first threshold is 3% of the weight of the polysilicon supplied to the crucible, A leak detection device, wherein the second threshold is 5% of the weight of the polysilicon supplied to the crucible.

8. In paragraph 6, A leak detection device, wherein the third threshold is 10% of the weight of the polysilicon supplied to the crucible.

9. In paragraph 1, It further includes a chamber disposed at the bottom of the crucible and a hot zone structure made of insulation material to protect the chamber, The above tray is a leak detection device that covers the hot zone structure between the crucible and the hot zone structure.

10. In paragraph 1, The above crucible, Including an outlet extending outward from one side of the above crucible; The end of the above outlet is positioned so that it faces downward, The location of the above outlet is: A leak detection device located above the central height of the above crucible.

11. In paragraph 10, A leak detection device, wherein the projection of the above tray includes the projection of the above crucible and the above leak.

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