Substrate processing apparatus and substrate processing method

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes: a processing unit for processing a substrate; a plasma generating unit for generating plasma from process gas; and a baffle assembly positioned between the processing unit and the plasma generating unit and having a passage through which the plasma generated in the plasma generating unit flows to the processing unit, wherein the processing unit comprises: a processing chamber having a processing space inside; a chuck unit for supporting the substrate in the processing space; and an exhaust unit provided to exhaust the atmosphere from the processing space through the peripheral region of the chuck unit, and the baffle assembly may have formed therein a purge gas line for supplying a purge gas to flow along the inner wall of the processing chamber.

Description

Substrate processing device and substrate processing method

[0001] The present invention relates to a substrate processing device and a substrate processing method, and more particularly, to a device and method for processing a substrate using plasma.

[0002] Typically, the process of manufacturing semiconductor devices involves processing the substrate using plasma, such as etching, surface treatment, ashing, and removal of native oxide films. These processes are accomplished by the ions, electrons, and radicals contained in the plasma colliding with or reacting with films on the substrate.

[0003] For example, a plasma treatment step for reacting a film on a substrate using plasma, and a by-product removal step for removing reaction by-products generated on the substrate during the plasma treatment step may be performed.

[0004] In the plasma treatment step, plasma is generated in a discharge space provided outside the treatment space where the substrate is located, and a baffle disposed between the treatment space and the discharge space is used to supply mainly radical components among the components contained in the plasma to the treatment space to treat the substrate.

[0005] However, when generating the plasma described above, ultraviolet light or particles are generated and enter the processing space through the holes formed in the baffle, thereby adversely affecting the substrate.

[0006] In addition, when etching a substrate using the above-described method, it is difficult to control the etching selectivity between film types on the substrate.

[0007] In the byproduct removal step, the substrate is heated to a high temperature to volatilize the reaction byproducts on the substrate, thereby removing them. However, the reaction byproducts removed from the substrate adhere in large quantities to the inner walls of the processing chamber, and these act as particles when processing subsequent substrates.

[0008] The purpose of the present invention is to provide a substrate processing device and a substrate processing method that can increase processing efficiency when processing a substrate using plasma.

[0009] In addition, the present invention aims to provide a substrate processing device and a substrate processing method capable of minimizing the adverse effects of ultraviolet light and particles on a substrate when processing the substrate with plasma generated outside a processing space where the substrate is located.

[0010] In addition, the present invention aims to provide a substrate processing device and a substrate processing method that facilitate control of etching selectivity when processing a substrate with plasma generated outside a processing space where the substrate is located.

[0011] In addition, the present invention aims to provide a substrate processing device and a substrate processing method capable of minimizing the adhesion of reaction byproducts volatilized from the substrate to the inner wall of a processing chamber when removing reaction byproducts generated on the substrate during the substrate processing step.

[0012] The problems to be solved by the present invention are not limited to the problems described above, and problems not mentioned can be clearly understood by a person having ordinary skill in the technical field to which the present invention pertains from this specification and the attached drawings.

[0013] The present invention provides a device for processing a substrate. The device for processing a substrate comprises: a processing unit for processing a substrate; a plasma generating unit for generating plasma from a process gas; and a baffle assembly positioned between the processing unit and the plasma generating unit, the baffle assembly forming a passage through which the plasma generated in the plasma generating unit flows to the processing unit, wherein the processing unit comprises: a processing chamber having a processing space therein; a chuck unit for supporting a substrate within the processing space; and an exhaust unit provided to exhaust an atmosphere within the processing space through a peripheral region of the chuck unit, wherein a purge gas line for supplying a purge gas so as to flow along an inner wall of the processing chamber may be formed in the baffle assembly.

[0014] In one embodiment, the baffle assembly comprises: a first baffle having a first through-hole formed therein in a vertical direction; and a second baffle disposed vertically apart from the first baffle so as to provide a buffer space therebetween, and having a second through-hole formed therein in a vertical direction, wherein the purge gas line may be formed in the first baffle.

[0015] In one embodiment, the first baffle may be grounded.

[0016] In one embodiment, when viewed from above, the first through hole and the second through hole may be provided so as not to overlap each other.

[0017] According to one embodiment, the plasma generating unit comprises a discharge chamber having a plasma formation space in which plasma is formed from a first gas; an adapter connected to the discharge chamber and the processing chamber and guiding plasma formed in the discharge chamber to the processing chamber; and the baffle assembly is fixedly coupled to the adapter, and the first baffle can be positioned apart from an inner wall of the adapter or an inner wall of the processing chamber.

[0018] In one embodiment, the first baffle is disposed above the second baffle, and the substrate processing device further includes a gas supply unit, wherein the gas supply unit includes: a first gas supply source that supplies the first gas to the plasma formation space; a second gas supply source that supplies the second gas to the buffer space without passing through the plasma formation space; and a purge gas supply source that supplies the purge gas to the purge gas supply line.

[0019] According to one embodiment, the first baffle may further include a gas path through which the second gas flows and an injection hole for injecting the second gas flowing through the gas path into the buffer space, and the gas path may be provided to communicate with a lower region of the first baffle through the injection hole and not communicate with an upper region of the first baffle.

[0020] In one embodiment, a heater may be installed in the baffle assembly.

[0021] In one embodiment, the second through hole is formed in the central region among the central region and the edge region of the second baffle, and a groove may be formed on the upper surface of the edge region of the second baffle.

[0022] In one embodiment, the grooves are provided in a plurality spaced apart from each other along the circumference of the second baffle, and screw holes are formed between adjacent grooves in the second baffle, and the baffle assembly can be fixedly connected to the plasma generating unit by bolts inserted through the screw holes.

[0023] In one embodiment, each of the grooves may be formed in an arc shape when viewed from above.

[0024] In one embodiment, a heater may be installed below the groove within the second baffle.

[0025] According to one embodiment, the substrate processing device further comprises: a gas supply unit; a heater installed in the second baffle; and a controller for controlling the gas supply unit and the heater, wherein the gas supply unit comprises: a first gas supply source for supplying the first gas to the plasma formation space; a second gas supply source for supplying a second gas to the buffer space without passing through the plasma formation space; and a purge gas supply source for supplying the purge gas to the purge gas supply line, wherein the controller is configured to: supply plasma generated from the first gas in the plasma generation room and the second gas supplied to the buffer space to the processing room, thereby processing a substrate provided in the processing room with the plasma; And after the substrate processing step, the supply of the first gas and the second gas is stopped, and a by-product removal step of removing a reaction by-product generated on the substrate in the substrate processing step by heating the substrate provided in the processing chamber is sequentially performed, and the gas supply unit and the heater can be controlled so that the purge gas flows along the inner wall of the processing chamber during the by-product removal step.

[0026] The present invention provides a method for processing a substrate. In the method for processing a substrate, the method comprises: a substrate processing step of supplying plasma generated from a first gas in a plasma generation chamber through a baffle assembly to a processing chamber, and processing the substrate provided in the processing chamber with the plasma; and, after the substrate processing step, a by-product removal step of stopping the supply of the plasma to the processing chamber and heating the substrate provided in the processing chamber to remove a reaction by-product generated on the substrate in the substrate processing step, wherein a purge gas may be supplied to the processing chamber so as to flow along an inner wall of the processing chamber during the by-product removal step.

[0027] In one embodiment, in the substrate processing step, the substrate is positioned spaced apart from the baffle assembly by a first distance, and in the byproduct removal step, the substrate is positioned spaced apart from the baffle assembly by a second distance, and the substrate is heated by a heater provided in the baffle assembly, and the second distance may be shorter than the first distance.

[0028] In one embodiment, the baffle assembly further includes a first baffle and a second baffle that are spaced apart from each other vertically and have a buffer space formed therebetween, and in the substrate processing step, a second gas supplied to the buffer space without passing through the plasma generation chamber can be supplied to the processing chamber together with plasma generated from the first gas.

[0029] In one embodiment, the first gas may include nitrogen, hydrogen, nitrogen trifluoride, ammonia, or a mixture thereof, and the second gas may include helium or argon.

[0030] In one embodiment, in the substrate processing step, the processing of the substrate may be a cleaning process for cleaning a film on the substrate or an etching process for etching a film on the substrate.

[0031] In addition, the present invention provides a device for processing a substrate. The device for processing a substrate comprises: a processing unit for processing a substrate; a plasma generating unit for generating plasma from a process gas; and a baffle assembly positioned between the processing unit and the plasma generating unit, wherein the processing unit comprises: a processing chamber having a processing space therein; a chuck unit for supporting a substrate within the processing space; and an exhaust unit provided to exhaust an atmosphere within the processing space through a peripheral region of the chuck unit, wherein the plasma generating unit comprises: a discharge chamber having a plasma forming space in which plasma is formed from a first gas; and an adapter connected to the discharge chamber and the processing chamber and guiding plasma formed in the discharge chamber to the processing chamber, wherein the baffle assembly is fixedly coupled to the adapter, and the baffle assembly comprises: a first baffle having a first through-hole formed therein in a vertical direction; A second baffle is provided, which is spaced apart from the first baffle in the vertical direction so as to provide a buffer space between the first baffle and the second baffle, and has a second through-hole formed therein extending vertically therethrough, wherein when viewed from above, the first through-hole and the second through-hole do not overlap each other, the first baffle is positioned spaced apart from the inner wall of the adapter or the inner wall of the processing chamber, and a purge gas line is formed in the first baffle or the second baffle to supply a purge gas so as to flow along the inner wall of the processing chamber, and the substrate processing apparatus may further include: a heater provided in the second baffle; a first gas supply source that supplies the first gas to the plasma formation space; a second gas supply source that supplies the second gas to the buffer space without passing through the plasma formation space; and a purge gas supply source that supplies the purge gas to the purge gas supply line.

[0032] In one embodiment, a groove is formed on the upper surface of the edge region of the second baffle, a screw hole is formed between adjacent grooves in the second baffle, and the baffle assembly can be fixedly connected to the plasma generating unit by a bolt inserted through the screw hole.

[0033] According to one embodiment of the present invention, when treating a substrate using plasma, substrate treatment efficiency can be improved.

[0034] In addition, according to one embodiment of the present invention, when treating a substrate with plasma generated outside a processing space where the substrate is located, it is possible to minimize the adverse effects of ultraviolet light and particles on the substrate.

[0035] Additionally, according to one embodiment of the present invention, the etching selectivity can be increased when processing a substrate with plasma generated outside a processing space in which the substrate is located.

[0036] In addition, according to one embodiment of the present invention, when removing reaction byproducts generated on a substrate in a substrate processing step, it is possible to minimize adhesion of reaction byproducts volatilized from the substrate to the inner wall of a processing room.

[0037] The effects of the present invention are not limited to the effects described above, and effects not mentioned can be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the attached drawings.

[0038] The various features and advantages of the non-limiting embodiments of this disclosure will become more apparent upon review of the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the claims. The accompanying drawings are not to scale unless explicitly stated otherwise. Various dimensions in the drawings may be exaggerated for clarity.

[0039] Figure 1 is a drawing schematically showing a substrate processing device of the present invention.

[0040] FIG. 2 is a schematic drawing showing one embodiment of the baffle assembly of FIG. 1.

[0041] Figure 3 is a perspective view of the first baffle of Figure 2.

[0042] Figure 4 is a plan view of the first baffle of Figure 2.

[0043] Figure 5 is a perspective view of the second baffle of Figure 2.

[0044] Figure 6 is a flowchart sequentially showing a method of processing a substrate using the substrate processing device of Figure 1.

[0045] Figures 7 and 8 are drawings schematically showing the state of the substrate processing device in the substrate processing step and by-product removal step of Figure 6, respectively.

[0046] Figures 9 to 12 are drawings showing modified examples of the baffle assembly of Figure 2, respectively.

[0047] Figures 13 and 14 are drawings showing modified examples of the substrate processing device of Figure 1, respectively.

[0048] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily practice the present invention. However, the present invention may be implemented in various different forms and is not limited to the embodiments described herein. In addition, when describing preferred embodiments of the present invention in detail, if a detailed description of a related known function or configuration is determined to unnecessarily obscure the gist of the present invention, the detailed description will be omitted. In addition, the same reference numerals are used throughout the drawings for parts that have similar functions and actions.

[0049] To "include" an element means that, unless otherwise stated, it may include other elements, but not to the exclusion of other elements. Specifically, terms such as "include" or "have" should be understood to specify the presence of a feature, number, step, operation, element, part, or combination thereof described in the specification, but not to preclude the presence or addition of one or more other features, numbers, steps, operations, elements, parts, or combinations thereof.

[0050] Singular expressions include plural expressions unless the context clearly indicates otherwise. Furthermore, the shapes and sizes of elements in the drawings may be exaggerated for clarity.

[0051] In this embodiment, a wafer is used as an example of a processing target. However, the technical concept of the present invention can also be applied to devices used for processing other types of substrates other than wafers.

[0052] Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. Fig. 1 is a cross-sectional view schematically showing a substrate processing device of the present invention.

[0053] Referring to FIG. 1, the substrate processing device has a plasma generation unit (200), a processing unit (400), a baffle assembly (600), a gas supply unit (800), and a controller (10).

[0054] The plasma generation unit (200) generates plasma used for substrate processing from process gas. The processing unit (400) receives and processes the substrate. The baffle assembly (600) is disposed between the plasma generation unit (200) and the processing unit (400), and supplies mainly radicals among the plasma generated in the plasma generation unit (200) to the processing chamber (420). The gas supply unit (800) supplies various process gases used for substrate processing to the plasma generation unit (200), the baffle assembly (600), or the processing unit (400). The controller (10) controls various components provided in the substrate processing device, such as the plasma generation unit (200), the processing unit (400), the gas supply unit (800), and the heater (700). Each component will be described in detail below.

[0055] The plasma generation unit (200) includes a discharge chamber (220), a plasma source (240), and an adapter (260). The discharge chamber (220) is provided in a generally cylindrical shape, and a plasma formation space (230) is provided inside the discharge chamber (220). A first gas, which will be described later, is introduced into the plasma formation space (230), and plasma is generated from the first gas in the plasma formation space (230).

[0056] The adapter (260) provides a path for the plasma generated in the discharge chamber (220) to flow to the treatment chamber (420).

[0057] The plasma source (240) forms an electromagnetic field in the plasma formation space (230). In one example, the plasma source (240) may be an inductively coupled plasma source. The plasma source (240) has an antenna (244) and a high-frequency power source (248). The antenna (244) is located outside the discharge chamber (220). The antenna (244) may be provided in a coil shape that surrounds the discharge chamber (220). The antenna (244) may be provided in a spiral shape that surrounds the discharge chamber (220) from the top to the bottom of the discharge chamber (220). The high-frequency power source (248) applies high-frequency power to the antenna (244). The top of the antenna (244) may be connected to the high-frequency power source (248), and the bottom of the antenna (244) may be grounded. Although not shown, a matching device may be installed on a power line connecting the high-frequency power source (248) and the antenna (244).

[0058] The adapter (260) is located between the discharge chamber (220) and the processing unit (400). The adapter (260) extends downward from the discharge chamber (220). The adapter (260) has a diffusion space (268) therein. The diffusion space (268) may be provided in a cone shape that becomes wider from top to bottom.

[0059] The processing unit (400) includes a processing chamber (420), a chuck unit (440), and an exhaust unit (460). The processing chamber (420) has a cylindrical shape. The processing chamber (420) has a processing space (424) inside. The outer wall of the processing chamber (420) can be grounded. A substrate is positioned in the processing space (424), and a predetermined processing is performed on the substrate in the processing space (424).

[0060] The chuck unit (440) supports the substrate in the processing space (424). The chuck unit (440) has a cylindrical shape. The chuck unit (440) may be an electrostatic chuck that holds the substrate by electrostatic force. A pin hole (442) extending vertically is formed in the chuck unit (440). A lift pin (444) is provided to transfer the substrate between an external transport robot and the chuck unit (440). The lift pin (444) is inserted into the pin hole (442) and can be moved vertically along the pin hole (442). When the substrate is transferred to the lift pin (444) while the upper end of the lift pin (444) is positioned higher than the upper end of the chuck unit (440), and when the substrate is transferred to the lift pin (444) while the upper end of the lift pin (444) is positioned higher than the upper end of the chuck unit (440), and when the upper end of the lift pin (444) is moved lower than the upper end of the chuck unit (440), the substrate is placed on the chuck unit (440). The chuck unit (440) is provided with a diameter smaller than the inner diameter of the processing chamber (420). As a result, a ring-shaped gap is formed between the chuck unit (440) and the inner wall of the processing chamber (420).

[0061] The exhaust unit (460) exhausts gases and reaction byproducts remaining in the processing space (424) and also maintains the pressure of the processing space (424) at a set process pressure. An exhaust port (464) is formed at the bottom of the processing chamber (420). The exhaust unit (460) has an exhaust pipe (468) connected to the exhaust port (464). A vacuum pump (not shown) may be installed in the exhaust pipe (468).

[0062] The baffle assembly (600) uniformly supplies plasma generated from the plasma generator (200) to the processing chamber (420). In addition, the baffle assembly (600) may be provided to supply mainly radicals among ions, electrons, and radicals contained in the plasma to the processing chamber (420). The baffle assembly (600) may be fixedly coupled to the plasma generator (200). For example, the baffle assembly (600) may be fixedly coupled to the adapter (260) by screws.

[0063] FIG. 2 is a cross-sectional view schematically showing one embodiment of the baffle assembly of FIG. 1.

[0064] Referring to FIG. 2, the baffle assembly (600) includes a first baffle (640) and a second baffle (660). The first baffle (640) may be positioned above the second baffle (660).

[0065] Figures 3 and 4 are a perspective view and a plan view, respectively, schematically showing the first baffle of Figure 2.

[0066] Referring to FIGS. 2 and 3, the first baffle (640) is provided in a circular shape when viewed from above. The outer diameter of the first baffle (640) is provided to be smaller than the inner diameter of the adapter (260). Accordingly, a ring-shaped gap (658) is formed between the first baffle (640) and the adapter (260). The first baffle (640) may be grounded. In one example, the first baffle (640) may be electrically connected to the processing chamber (420). Accordingly, among the ions and radicals contained in the plasma flowing toward the baffle assembly (600), the radicals may primarily flow to the processing chamber (420).

[0067] The first baffle (640) has a central region (641) and an edge region (642). The central region (641) is provided in a generally circular plate shape. The edge region (642) is located on the outside of the central region (641). The edge region (642) is provided in a generally circular plate shape. When viewed from above, the central region (641) may have a size similar to or larger than a substrate placed on the chuck unit (440). The central region (641) and the edge region (642) are provided in a stepped manner. The edge region (642) may be located higher than the central region (641). Accordingly, the first baffle (640) has a shape in which a concave space is formed on the upper portion of the central region (641).

[0068] A plurality of first through holes (644) are formed in the central region (641) of the first baffle (640). Each of the first through holes (644) extends from the top to the bottom of the first baffle (640). When viewed from above, each of the first through holes (644) is formed in a region that does not overlap with a gas path (648) described later. Each of the first through holes (644) may be formed such that its length direction is perpendicular to the substrate. The plasma of the first gas generated in the plasma generation chamber may flow into the processing chamber (420) through the first through holes (644).

[0069] A gas path (648) is formed inside the first baffle (640). The gas path (648) is a passage through which a second gas, which will be described later, flows. The gas path (648) may be formed in a central region (641) of the first baffle (640). In one example, the gas path (648) has a central path (648a), a plurality of ring paths (648b), and a plurality of straight paths (648c). The central path (648a) is formed in a circular shape. When viewed from above, the center of the central path (648a) coincides with the center of the first baffle (640). Each ring path (648b) has an annular shape. Each ring path (648b) is arranged to surround the central path (648a). The ring paths (648b) have different radii. The center of the ring path (648b) may coincide with the center of the central path (648a). A plurality of ring euros (648b) may be provided concentrically. In one example, two ring euros (648b) may be provided.

[0070] Each straight flow path (648c) connects a plurality of ring flow paths (648b) and a center flow path (648a). Each straight flow path (648c) is provided such that its length direction is in the radial direction of the first baffle (640). The angle between adjacent straight flow paths (648c) may be the same. In one example, one end of the straight flow path (648c) is connected to the center flow path (648a), and the other end of the straight flow path (648c) is located further outward than the ring flow path (648b) which is located most outward. Accordingly, the second gas can be supplied to a wider area than when the other end of the straight flow path (648c) is connected to the ring flow path (648b). One of the plurality of straight flow paths (648c) has an inlet connected to an external second line (824). In one example, four straight flow paths (648c) may be provided.

[0071] A spray hole (652) is formed in the first baffle (640). The spray hole (652) is provided to extend from the straight flow path (648c) to the lower end of the first baffle (640). The length direction of the spray hole (652) is formed perpendicular to the substrate supported by the chuck unit (440). The spray hole (652) is formed in the central region (641) of the first baffle (640). When viewed from above, the spray hole (652) is provided to overlap the gas flow path (648). The gas flow path (648) is provided to communicate with the lower region of the first baffle (640) through the spray hole (652) and not directly communicate with the upper region of the first baffle (640). Accordingly, the second gas supplied to the gas flow path (648) can be supplied to the processing space (424) without passing through the plasma formation space (230).

[0072] A purge gas line (844) is formed in the valve assembly (600). In one example, the purge gas line (844) may be formed in the first baffle (640). The purge gas line (844) may be formed in the edge region (642) of the first baffle (640). The purge gas line (844) has an inlet flow path (844a), a connection flow path (844b), and a discharge hole (844c). The connection flow path (844b) is provided in a ring shape. An externally supplied purge gas flows into the connection flow path (844b) through the inlet flow path (844a). The discharge hole (844c) extends from the connection flow path (844b) to the end of the side wall of the first baffle (640). The discharge hole (844c) is formed so that the purge gas can flow downward along the inner wall of the processing chamber (420). For example, the purge gas may be provided to be discharged in a direction toward the inner wall of the adapter (260). The purge gas discharged toward the inner wall of the adapter (260) flows downward along the inner wall of the processing chamber (420). For example, the discharge hole (844c) may be provided such that its length direction follows the radial direction of the first baffle (640). A plurality of discharge holes (844c) are provided along the length direction of the connecting passage (844b). The spacing between adjacent discharge holes (844c) may be provided to be the same.

[0073] Figure 5 is a perspective view schematically showing the second baffle of Figure 2.

[0074] Referring to FIGS. 2 and 5, the second baffle (660) has a central region (661) and an edge region (662). The central region (661) is provided in a generally circular plate shape. The edge region (662) is located outside the central region (661). The edge region (662) is provided in a generally circular plate shape. When viewed from above, the central region (661) may have a size similar to or larger than a substrate placed on the chuck unit (440). The central region (661) and the edge region (662) are provided in a stepped manner. The edge region (662) may be located higher than the central region (661).

[0075] The central region (661) of the second baffle (660) is positioned to be spaced apart from the central region (641) of the first baffle (640). The upper surface of the edge region (662) of the second baffle (660) is in contact with the lower surface of the edge region (642) of the first baffle (640). As a result, a buffer space (680) surrounded by the first baffle (640) and the second baffle (660) is formed between the central region (641) of the first baffle (640) and the central region (661) of the second baffle (660).

[0076] A plurality of second through holes (664) are formed in the central region (661) of the second baffle (660). Each of the second through holes (664) extends from the top to the bottom of the second baffle (660). Each of the second through holes (664) may be formed such that its length direction is perpendicular to the substrate. The second through holes (664) may be uniformly formed over the entire central region (661) of the second baffle (660). When viewed from above, the second through holes (664) are provided at positions that do not overlap with the first through holes (644). This can reduce the influence of ultraviolet light generated when plasma is formed in the discharge chamber (220) on the processing space (424). In addition, it can reduce particles generated in the plasma formation space (230) from entering the processing space (424) through the baffle assembly (600).

[0077] A heater (700) is inserted into the edge region (662) of the second baffle (660). The heater (700) may be provided in a generally circular coil shape. The heater (700) may be provided with a material that generates heat by resistance. A heater power source (702) that supplies power is connected to the heater (700).

[0078] A groove (668) is formed on the upper surface of the edge region (662) of the second baffle (660). A plurality of grooves (668) may be provided along the perimeter of the edge region (662) of the second baffle (660). Each groove (668) may be provided in an arc shape having a predetermined width. The grooves (668) may be provided with the same size and shape. The length of each groove (668) may be formed to be longer than the gap between adjacent grooves (668). The grooves (668) may minimize the heat transferred to the first baffle (640) when the heater (700) generates heat in the second baffle (660).

[0079] As described above, the baffle assembly (600) is fixedly connected to the adapter (260) by screws. Specifically, when viewed from above, a second screw hole (672) is formed between adjacent grooves (668) in the second baffle (660). The second screw hole (672) is formed to extend from the upper surface to the lower surface of the second baffle (660). In addition, a first screw hole (656) is formed in the first baffle (640) at a position corresponding to the second screw hole (672) formed in the second baffle (660), and a third screw hole (264) is formed in the adapter (260) at a position corresponding to the first screw hole (656) formed in the first baffle (640). The baffle assembly (600) can be fixedly connected to the adapter (260) by sequentially screwing the bolts into the second screw hole (672) of the second baffle (660), the first screw hole (656) of the first baffle (640), and the third screw hole (264) of the adapter (260).

[0080] The gas supply unit (800) includes a first gas supply source (802), a second gas supply source (822), and a purge gas supply source (842).

[0081] A first gas supply source (802) supplies a first gas to a plasma formation space (230) of a discharge chamber (220). The first gas is a reaction gas for plasma-treating a film on a substrate. The first gas may include nitrogen (N2), hydrogen (H2), nitrogen trifluoride (NF3), ammonia (NH3), or a mixed gas thereof. In one embodiment, the first gas may be a mixed gas of nitrogen (N2), hydrogen (H2), and nitrogen trifluoride (NF3). Optionally, the first gas may further include ammonia (NH3) in the above mixed gas. The first gas supply source (802) and the plasma formation space (230) are connected by a first line (804), and a first valve (806) may be installed in the first line (804). The first valve (806) may be an opening / closing valve for opening / closing a flow path of the first line (804). Optionally, a flow control valve (not shown) for controlling the flow rate of the first gas may be further installed in the first line (804).

[0082] The second gas supply source (822) supplies the second gas to the gas path (648) of the first baffle (640). The second gas is a gas for controlling the selectivity when plasma-treating a film on a substrate. According to an embodiment, the second gas may include helium (He) or argon (Ar). The type and flow rate of the second gas may be appropriately selected depending on the type of film on the substrate to be plasma-treated or the required selectivity.

[0083] The second gas supply source (822) can supply the second gas to any one of the plurality of straight flow paths (648c). The second gas supply source (822) and the straight flow path (648c) are connected by a second line (824), and a second valve (826) can be installed in the second line (824). The second valve (826) can be an opening / closing valve that opens / closes the flow path of the second line (824). Optionally, a flow control valve (not shown) that controls the flow rate of the second gas can be further installed in the second line (824).

[0084] A purge gas supply source (842) supplies purge gas to a purge gas supply line (848). The purge gas is supplied to a purge gas line (844) through the purge gas supply line (848). The purge gas supply source (842) and a connection path (844b) are connected by the purge gas supply line (848), and a third valve (846) may be installed in the purge gas supply line (848). The third valve (846) may be an opening / closing valve that opens / closes the path of the purge gas supply line (848). Optionally, a flow control valve (not shown) that controls the flow rate of the purge gas may be further installed in the purge gas supply line (848). The purge gas may be an inert gas. The purge gas may be nitrogen.

[0085] Fig. 6 is a flowchart sequentially showing a method for processing a substrate using the substrate processing device of Fig. 1. Figs. 7 and 8 are drawings schematically showing the state of the substrate processing device in the substrate processing step and byproduct removal step of Fig. 6, respectively.

[0086] Referring to Fig. 6, the substrate processing method includes a substrate processing step (S100) and a byproduct removal step (S200). In the substrate processing step (S100), the substrate is processed using plasma. The substrate processing may be a dry cleaning process, a dry strip process, an ashing process, a surface modification process, or an etching process.

[0087] Referring to FIG. 7, in the substrate processing step (S100), the substrate is positioned at a first distance (D1) from the baffle assembly (600). In one example, the substrate is supported on the chuck unit (440). The first valve (806) and the second valve (826) are opened, and the third valve (846) is closed. The high-frequency power source (248) is turned on, and the heater (700) is turned off. Accordingly, the first gas is supplied to the discharge chamber (220), and the second gas is supplied to the gas path (648) of the first baffle (640). When power is supplied to the antenna (244), plasma is generated from the first gas, and the plasma flows toward the baffle assembly (600) by the adapter (260). As the first baffle (640) is grounded, mainly radicals from the plasma of the first gas pass through the first penetration hole (644) and flow into the buffer space (680). The second gas supplied to the gas path (648) flows into the buffer space (680) through the injection hole (652).

[0088] In the buffer space (680), the first gas and the second gas are mixed with each other and then flow into the processing space (424) through the second through hole (664) of the second baffle (660). In the processing space (424), the substrate is plasma-treated. While the substrate is being processed, the processing space (424) is depressurized. The gas and reaction byproducts in the processing space (424) flow through the gap between the chuck unit (440) and the inner wall of the processing chamber (420) and are then exhausted outside the processing space (424) through the exhaust pipe (468).

[0089] When the substrate processing step (S100) is completed, the by-product removal step (S200) is performed.

[0090] Referring to FIG. 8, in the byproduct removal step (S200), the substrate is positioned at a second distance (D2) from the baffle assembly (600). In one example, the substrate is maintained in a state of being lifted a certain distance from the chuck unit (440) by the lift pin (444). Accordingly, the second distance (D2), which is the distance between the substrate and the baffle assembly (600) in the byproduct removal step (S200), is shorter than the first distance (D1), which is the distance between the substrate and the baffle assembly (600) in the substrate processing step (S100).

[0091] The first valve (806) and the second valve (826) are closed, and the third valve (846) is opened. In addition, the high-frequency power source (248) is turned off, and the heater (700) is turned on. As a result, the supply of the first gas to the discharge chamber (220) is stopped, and the supply of the second gas to the gas path (648) is also stopped. In addition, the purge gas is supplied to the purge gas supply line (844). The processing space (424) is continuously depressurized. The purge gas is injected between the first baffle (640) and the inner wall of the adapter (260), and then flows downward along the inner wall of the processing chamber (420). As a result, a gas curtain of the purge gas is formed in an area adjacent to the inner wall of the processing chamber (420). The substrate is heated by the heater (700). For example, the substrate may be heated to 100 degrees Celsius or higher. In this way, the reaction byproducts generated on the substrate in the substrate processing step (S100) are volatilized. The volatilized reaction byproducts are exhausted through the peripheral area of ​​the chuck unit (440) to the exhaust pipe (468) outside the processing space (424).

[0092] Below, variations not described in the above embodiments are described.

[0093] In the above-described example, the purge gas line (844) is described as being formed in the first baffle (640). However, as illustrated in FIG. 9, the purge gas line (1844) may be formed in the second baffle (660).

[0094] In the above-described embodiment, the purge gas is described as being injected between the inner walls of the first baffle (640). However, this is merely exemplary, and the invention is not limited to injecting the purge gas in a direction perpendicular to the inner wall of the adapter (260). As shown in FIG. 10, the purge gas line (2844) may be formed not perpendicular to the inner wall of the adapter (260), but rather to supply the purge gas in a downwardly inclined direction toward the inner wall.

[0095] In the above-described example, the heater (700) is described as being placed in the edge area (662) of the second baffle (660). However, this is not limited thereto, and the heater (700) may be placed in the entire area of ​​the second baffle (660), as shown in FIG. 11.

[0096] In the above-described example, it was described that the second gas is supplied to the buffer space (680) between the first baffle (640) and the second baffle (660) through the gas path (648) formed in the first baffle (640). However, unlike this, as shown in FIG. 12, the gas path (648) is not formed in the first baffle (640), and the second gas can be supplied directly to the buffer space (680).

[0097] In the above-described example, the substrate processing device is described as having a structure in which the plasma formation space (230) is formed within a discharge chamber (220) located at a higher position than the baffle assembly (600). However, unlike this, as illustrated in FIG. 13, the substrate processing device (2) has a structure in which plasma is formed within a processing chamber (420), and a purge gas line (3844) for supplying purge gas into the processing chamber (420) may be additionally provided. In this case, when the substrate processing step (S100) and the by-product removal step (S200) are sequentially performed, the purge gas may be supplied in the by-product removal step (S200).

[0098] In the above-described example, the baffle assembly (600) is described as having a first baffle (640) and a second baffle (660). However, this is not limited thereto, and as illustrated in FIG. 14, the baffle assembly may have only one baffle (1600) and both a purge gas supply line (4844) and a heater (700) may be provided to the baffle (1600).

[0099] In the above-described example, the baffle assembly (600) is described as supplying purge gas directly toward the inner wall of the adapter (260). However, alternatively, the baffle assembly (600) may be provided with a structure that supplies purge gas directly toward the inner wall of the processing chamber (420).

[0100] In the above-described embodiment, it was explained that an inert gas can be used as the purge gas, and that the inert gas can include nitrogen (N2). However, this is merely exemplary, and alternatively, a gas such as helium (He) or argon (Ar) can be used as the purge gas.

[0101] In the above-described example, the first baffle (640) is grounded and is described as performing the function of an ion blocker. However, in contrast, among the first baffle (640) and the second baffle (660), the second baffle (660) may be grounded and perform the function of an ion blocker, or both the first baffle (640) and the second baffle (660) may be grounded.

[0102] In the above-described example, the groove (668) is described as being formed at the upper end of the edge region (662) of the second baffle (660). However, alternatively, the groove (668) may be formed at the lower end of the edge region (642) of the first baffle (640), and optionally, the groove (668) may be formed at both the upper end of the edge region (662) of the second baffle (660) and the lower end of the edge region (642) of the first baffle (640).

[0103] In the substrate processing method described above, it has been described that the purge gas is supplied only in the by-product removal step (S200) among the substrate processing step (S100) and the by-product removal step (S200). However, in contrast, the purge gas may be supplied before the by-product removal step (S200) is performed.

[0104] It should be understood that exemplary embodiments have been disclosed herein, and that other variations are possible. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but, where applicable, may be interchangeable and used in a selected embodiment, even if not specifically illustrated or described. Such variations should not be considered a departure from the spirit and scope of the present disclosure, and all such modifications apparent to those skilled in the art are intended to be included within the scope of the following claims.

Claims

1. In a device for processing a substrate, A processing unit that processes the substrate; A plasma generator that generates plasma from process gas; and A baffle assembly is provided between the processing unit and the plasma generating unit, and a passage is formed through which the plasma generated in the plasma generating unit flows to the processing unit. The above processing unit, A processing room having a processing space inside; A chuck unit supporting a substrate within the above processing space; and An exhaust unit is provided to exhaust the atmosphere within the processing space through the peripheral area of ​​the chuck unit, In the above baffle assembly, A substrate processing device in which a purge gas line is formed to supply purge gas so as to flow along the inner wall of the above processing room.

2. In paragraph 1, The above baffle assembly, A first baffle having a first through hole formed therein that penetrates in the vertical direction; and A second baffle is provided, which is spaced apart from the first baffle in the vertical direction so as to provide a buffer space between the first baffle and the second baffle, and has a second through hole formed therein that penetrates vertically. The above purge gas line is a substrate processing device formed in the first baffle.

3. In paragraph 2, The above first baffle is a grounded substrate processing device.

4. In paragraph 2, A substrate processing device in which the first through hole and the second through hole are provided so as not to overlap each other when viewed from above.

5. In paragraph 2, The above plasma generating unit is, A discharge chamber having a plasma formation space in which plasma is formed from a first gas; An adapter is provided that is connected to the above discharge room and the above treatment room and guides the plasma formed in the discharge room to the treatment room, The above baffle assembly is fixedly connected to the above adapter, A substrate processing device in which the first baffle is positioned apart from the inner wall of the adapter or the inner wall of the processing chamber.

6. In paragraph 5, The above first baffle is positioned above the above second baffle, The above substrate processing device further includes a gas supply unit, The above gas supply unit, A first gas supply source that supplies the first gas to the plasma formation space; A second gas supply source that supplies a second gas to the buffer space without passing through the plasma formation space; and A substrate processing device including a purge gas supply source for supplying the purge gas to the purge gas supply line.

7. In paragraph 6, The first baffle further has a gas path through which the second gas flows and an injection hole for injecting the second gas flowing through the gas path into the buffer space. A substrate processing device provided such that the gas path communicates with the lower region of the first baffle through the injection hole and does not communicate with the upper region of the first baffle.

8. In paragraph 2, A substrate processing device in which a heater is installed in the above baffle assembly.

9. In paragraph 2, The above second through hole is formed in the central region among the central region and the edge region of the second baffle, A substrate processing device in which a groove is formed on the upper surface of the edge area of ​​the second baffle.

10. In paragraph 9, The above home is provided in multiple numbers spaced apart from each other along the perimeter of the second baffle, A screw hole is formed between the adjacent grooves in the second baffle. A substrate processing device in which the above baffle assembly is fixedly connected to the plasma generator by a bolt inserted through the screw hole.

11. In paragraph 10, A substrate processing device in which each of the above grooves is formed in an arc shape when viewed from above.

12. In paragraph 9, A substrate processing device in which a heater is installed below the groove within the second baffle.

13. In paragraph 2, The above substrate processing device, Gas supply unit and; A heater installed in the second baffle; and Further comprising a controller for controlling the gas supply unit and the heater, The above gas supply unit, A first gas supply source that supplies the first gas to the plasma formation space; A second gas supply source that supplies a second gas to the buffer space without passing through the plasma formation space; and A purge gas supply source for supplying the purge gas to the purge gas supply line is included. The above controller, A substrate processing step of supplying plasma generated from the first gas in the plasma generation room and the second gas supplied to the buffer space to the processing room to process a substrate provided in the processing room with the plasma; and After the substrate processing step, the supply of the first gas and the second gas is stopped, and the substrate provided in the processing room is heated to sequentially perform a by-product removal step of removing reaction by-products generated on the substrate in the substrate processing step. A substrate processing device that controls the gas supply unit and the heater so that the purge gas flows along the inner wall of the processing chamber during the byproduct removal step.

14. In the method of processing the substrate, A substrate processing step of supplying plasma generated from a first gas in a plasma generation room through a baffle assembly to a processing room and processing the substrate provided in the processing room with the plasma; and After the substrate processing step, the supply of the plasma to the processing room is stopped, and the substrate provided to the processing room is heated to remove the by-products generated on the substrate in the substrate processing step. A substrate processing method for supplying purge gas to the processing chamber so that the purge gas flows along the inner wall of the processing chamber during the byproduct removal step.

15. In paragraph 14, In the above substrate processing step, the substrate is positioned at a first distance from the baffle assembly, In the above byproduct removal step, the substrate is positioned at a second distance from the baffle assembly, and the substrate is heated by a heater provided in the baffle assembly. A substrate processing method wherein the second distance is shorter than the first distance.

16. In paragraph 14, The above baffle assembly, It further includes a first baffle and a second baffle that are spaced apart from each other vertically and have a buffer space formed therebetween, A substrate processing method in which a second gas supplied to the buffer space without passing through the plasma generation chamber in the substrate processing step is supplied to the processing chamber together with plasma generated from the first gas.

17. In paragraph 16, The first gas comprises nitrogen, hydrogen, nitrogen trifluoride, ammonia, or a mixed gas thereof, A method for processing a substrate, wherein the second gas comprises helium or argon.

18. In paragraph 16, A substrate processing method in which the processing of the substrate in the above substrate processing step is a cleaning process for cleaning a film on the substrate or an etching process for etching a film on the substrate.

19. In a device for processing a substrate, A processing unit that processes the substrate; A plasma generator that generates plasma from process gas; and A baffle assembly is provided between the above processing unit and the above plasma generating unit, The above processing unit, A processing room having a processing space inside; A chuck unit supporting a substrate within the above processing space; An exhaust unit is provided to exhaust the atmosphere within the processing space through the peripheral area of ​​the chuck unit, The above plasma generating unit is, A discharge chamber having a plasma formation space in which plasma is formed from a first gas; An adapter is provided that is connected to the above discharge room and the above treatment room and guides the plasma formed in the discharge room to the treatment room, The above baffle assembly is fixedly connected to the above adapter, The above baffle assembly, A first baffle having a first through hole formed therein that penetrates in an up-down direction; A second baffle is provided, which is spaced apart from the first baffle in the vertical direction so as to provide a buffer space between the first baffle and the second baffle, and has a second through hole formed therein that penetrates vertically. When viewed from above, the first through hole and the second through hole do not overlap each other, The above first baffle is positioned apart from the inner wall of the adapter or the inner wall of the processing room, A purge gas line is formed in the first baffle or the second baffle to supply purge gas so as to flow along the inner wall of the processing room. The above substrate processing device, A heater provided in the second baffle; A first gas supply source that supplies the first gas to the plasma formation space; A second gas supply source that supplies a second gas to the buffer space without passing through the plasma formation space; and A substrate processing device further comprising a purge gas supply source for supplying the purge gas to the purge gas supply line.

20. In paragraph 19, A groove is formed on the upper surface of the edge area of ​​the second baffle, A screw hole is formed between the adjacent grooves in the second baffle. A substrate processing device in which the above baffle assembly is fixedly connected to the plasma generator by a bolt inserted through the screw hole.

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