Semiconductor process apparatus and exhaust gas treatment device thereof

Abstract

Provided in the present application are a semiconductor process apparatus and an exhaust gas treatment device thereof. The device comprises a housing, a flow-guiding component and an adsorption component, wherein the housing comprises an inlet and an outlet, the inlet being configured to introduce a process gas discharged from a reaction chamber into the housing; the flow-guiding component is disposed in the housing and divides the interior of the housing into fluid channels, which comprise an inflow channel communicating with the inlet and an outflow channel communicating with the outlet, the inflow channel communicating with the outflow channel; and part of the adsorption component is arranged in the inflow channel, and the remaining part of the adsorption component is arranged in the outflow channel and configured to adsorb by-products in the process gas. The process gas sequentially passes through the inflow channel and the outflow channel, and the adsorption component adsorbs the by-products in the process gas during the flow of the process gas. The flow-guiding component increases the flow resistance and flow path of the process gas, and extends the residence time of the process gas in the housing, such that the adsorption component fully adsorbs the by-products in the process gas, thereby improving the adsorption rate of the by-products.

Description

Semiconductor process equipment and exhaust treatment device thereof Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to a semiconductor process equipment and an exhaust treatment device thereof. Background Art

[0002] Among chemical vapor deposition processes, low-pressure chemical vapor deposition (LPCVD) reduces vapor nucleation at low pressure, offering significant advantages in uniformity and step coverage, as well as reduced contamination and higher product quality. LPCVD has become the mainstream thin-film deposition process, and LPCVD equipment is favored by semiconductor manufacturers.

[0003] Some LPCVD processes generate byproducts. These byproducts not only affect process quality but can also clog pipelines, valves, or affect vacuum pump operation. To ensure LPCVD equipment quality and extend the maintenance and replacement cycle of the reaction chamber, these byproducts must be collected or processed promptly.

[0004] Therefore, how to more fully absorb the by-products is a technical problem that those skilled in the art urgently need to solve. Summary of the Invention

[0005] The present application aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process equipment and an exhaust treatment device thereof, which can extend the residence time of the process gas in the exhaust treatment device and thereby more fully absorb by-products.

[0006] In order to achieve the purpose of the present application, an exhaust gas treatment device is provided, which is applied to semiconductor process equipment and includes a housing, a flow guide component and an adsorption component, wherein:

[0007] The shell includes an inlet and an outlet, the inlet is used to allow process gas exhausted from the reaction chamber to pass into the shell;

[0008] The flow guide component is disposed in the housing and divides the interior of the housing into a fluid channel, wherein the fluid channel comprises an inlet channel and an outlet channel respectively connected to the inlet and the outlet, and the inlet channel is connected to the outlet channel;

[0009] The adsorption component is partially disposed in the inlet channel, and the remaining portion of the adsorption component is disposed in the outlet channel for adsorbing by-products in the process gas.

[0010] In some embodiments, the orientation of the outlet is at an angle to the orientation of the inlet;

[0011] The guide component includes a first guide plate and a second guide plate at an angle, one end of the first guide plate is connected to the shell at a position between the inlet and the outlet, the other end of the first guide plate extends away from the inlet and is connected to one end of the second guide plate, and the other end of the second guide plate extends away from the outlet.

[0012] In some embodiments, the shell includes a first shell and a second shell, and the first shell and the second shell both have a side wall that surrounds the circumference; the first shell and the second shell are sealed together along one axial end of the side wall, the outlet is located at one end of the first shell axially away from the second shell along the side wall, and the inlet is located on the side wall of the second shell.

[0013] In some embodiments, the second deflector separates the space enclosed by the side wall of the second shell into a first subspace and a second subspace, and an end of the second deflector away from the outlet is spaced apart from the second shell to connect the first subspace and the end of the second subspace away from the outlet;

[0014] The first guide plate is respectively connected to an end of the second guide plate close to the outlet and the side wall of the second shell to close an end of one of the first subspace and the second subspace close to the outlet; one of the first subspace and the second subspace constitutes the inlet channel; an end of the other of the first subspace and the second subspace close to the outlet is connected to the space enclosed by the side wall of the first shell, and together constitute the outflow channel.

[0015] In some embodiments, the adsorption component includes a plurality of condensation sheets, and the plurality of condensation sheets are all disposed on the second guide plate and arranged in a direction away from the outlet, and each of the condensation sheets forms an angle with the second guide plate.

[0016] In some embodiments, the condensing sheet includes a first condensing sheet, and the number of the first condensing sheets is at least two, and the length of the at least two first condensing sheets extending relative to the second guide plate gradually decreases in a direction away from the outlet.

[0017] In some embodiments, the condensing sheet further includes a second condensing sheet, and the number of the second condensing sheets is multiple, each of the second condensing sheets is arranged on a side of all the first condensing sheets away from the outlet, and each of the second condensing sheets extends the same length relative to the second guide plate;

[0018] The length of each of the second condensing sheets extending relative to the second guide plate is less than or equal to the minimum length of at least two of the first condensing sheets extending relative to the second guide plate.

[0019] In some embodiments, each of the first condensing sheets is perpendicular to the second guide plate, and on a plane perpendicular to the second guide plate, the center of the orthographic projection of each of the first condensing sheets passes through the center of the orthographic projection of the second guide plate; or

[0020] Each of the second condensing plates is perpendicular to the second guide plate, and on a plane perpendicular to the second guide plate, the orthographic projection center of each of the second condensing plates passes through the orthographic projection center of the second guide plate.

[0021] In some embodiments, the second shell is provided with a maintenance port at one end along the side wall axially away from the first shell, and the exhaust treatment device further includes a sealing cover detachably connected to the maintenance port, and a second sealing ring is provided between the maintenance port and the sealing cover.

[0022] In some embodiments, an absorption liquid is provided at the connection point between the inlet channel and the outlet channel for absorbing incompletely reacted process gas.

[0023] The present application also provides a semiconductor process equipment, comprising a reaction chamber, a flow control valve and an exhaust treatment device as described above, wherein the inlet of the exhaust treatment device is connected to the exhaust port of the reaction chamber, and the outlet of the exhaust treatment device is connected to the inlet of the flow control valve.

[0024] This application has the following beneficial effects:

[0025] The exhaust treatment device provided in the present application is provided with a flow guide component in the shell, which divides the interior of the shell into a fluid channel. The fluid channel includes an inlet channel and an outlet channel respectively connected to the inlet and the outlet, and the inlet channel and the outlet channel are connected. In this way, the process gas entering the shell from the inlet can pass through the inlet channel and the outflow channel in sequence and be discharged from the outlet. On this basis, the adsorption component is partially arranged in the inlet channel, and the rest of the adsorption component is arranged in the outflow channel. The adsorption component is used to absorb by-products in the process gas during the flow of the process gas. The fluid channel formed by the flow guide component dividing the interior of the shell increases the flow resistance and flow distance of the process gas, prolongs the residence time of the process gas in the shell, enables the adsorption component to fully absorb the by-products in the process gas, and improves the absorption rate of the by-products.

[0026] The present application also provides a semiconductor process equipment including the above-mentioned exhaust treatment device, and having the above-mentioned advantages. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] FIG1 is a schematic diagram of the internal structure of an exhaust treatment device provided in a specific embodiment of the present application;

[0028] FIG2 is a schematic structural diagram of the other side of the exhaust treatment device in FIG1 ;

[0029] FIG3 is a schematic diagram of the structure of the flow guide component and the adsorption component in FIG1;

[0030] FIG4 is a cross-sectional view taken along line AA in FIG1 ;

[0031] FIG5 is a cross-sectional view taken along line BB in FIG1 ;

[0032] FIG6 is a schematic structural diagram of a semiconductor process equipment provided in a specific embodiment of the present application.

[0033] Among them, the figure marks in Figures 1 to 6 are: 100, reaction chamber; 200, vacuum pipeline; 300, exhaust treatment device; 310, shell; 311, inlet; 312, outlet; 313, maintenance port; 314, connecting flange; 315, blind plate; 316, first shell; 317, second shell; 318, first clamp; 319, second clamp; 320, guide component; 321, first guide plate; 322, second guide plate; 330, adsorption component; 331, condensing plate; 340, absorption liquid; 400, flow control valve. DETAILED DESCRIPTION

[0034] In order to enable those skilled in the art to better understand the technical solution of the present application, the semiconductor process equipment and the exhaust treatment device thereof provided by the present application are described in detail below with reference to the accompanying drawings.

[0035] As shown in Figure 1, the exhaust gas treatment device 300 provided in this application is applied to semiconductor process equipment. The exhaust gas treatment device 300 includes a shell 310, a flow guide component 320 and an adsorption component 330. Among them, the shell 310 includes an inlet 311 and an outlet 312. The inlet 311 is used to introduce the process gas discharged from the reaction chamber into the shell 310. That is, the process gas discharged from the reaction chamber of the semiconductor process equipment enters the shell 310 through the inlet 311. The process gas usually contains by-products generated during the reaction process. After the exhaust gas treatment device 300 absorbs the by-products in the process gas, the process gas is discharged from the outlet 312.

[0036] The flow guide component 320 is disposed within the housing 310 and divides the interior of the housing 310 into fluid channels. In some embodiments, the flow guide component 320 is connected to the inner wall of the housing 310 and sealed at the connection between the two, thereby dividing the interior of the housing 310 into fluid channels. The fluid channels include an inlet channel and an outlet channel, which are respectively connected to the inlet 311 and the outlet 312. The inlet channel and the outlet channel are connected, and the flow guide component 320 can guide the process gas to pass through the inlet channel and the outlet channel in sequence. The adsorption component 330 is partially disposed in the inlet channel, and the remaining portion of the adsorption component 330 is disposed in the outlet channel to adsorb byproducts in the process gas.

[0037] The fluid channel structure can be customized to meet user needs, such as a U-shape, S-shape, or spiral shape. Adsorption components 330 are positioned within the inlet and outlet channels, leaving space for process gas flow. During the flow of process gas, adsorption components 330 can absorb byproducts from the process gas. Specifically, the process gas typically includes liquid and solid byproducts. Solid byproducts can adhere to adsorption components 330, while liquid byproducts can flow downward along adsorption components 330 and flow guide components 320, thereby retaining the liquid and solid byproducts within the exhaust treatment device 300.

[0038] In this embodiment, a flow guide component 320 is provided in the exhaust treatment device 300. The flow guide component 320 divides the interior of the shell 310 to form a fluid channel, thereby extending the flow distance of the process gas in the shell 310, increasing the flow resistance of the process gas, and thereby extending the residence time of the process gas in the shell 310, so that the adsorption component 330 can more fully adsorb the by-products in the process gas.

[0039] In some embodiments, the outlet 312 is oriented at an angle to the inlet 311. Furthermore, the flow guide component 320 includes a first flow guide plate 321 and a second flow guide plate 322, each at an angle. One end of the first flow guide plate 321 is connected to the housing 310 between the inlet 311 and the outlet 312. The other end of the first flow guide plate 321 extends away from the inlet 311 and is connected to one end of the second flow guide plate 322. The other end of the second flow guide plate 322 extends away from the outlet 312. An inlet channel is formed between a surface of the first flow guide plate 321 facing away from the outlet 312, a surface of the second flow guide plate 322 facing the inlet 311, and an inner wall of the housing 310 where the inlet 311 is located. An outflow channel is formed between a surface of the second flow guide plate 322 facing away from the inlet 311 and an inner wall of the housing 310 opposite the inlet 311. The outflow channel is connected to the inlet channel and to the outlet 312.

[0040] By connecting one end of the first guide plate 321 to a position of the shell 310 between the inlet 311 and the outlet 312, and extending the other end of the first guide plate 321 in a direction away from the inlet 311 (for example, from left to right in Figure 1), the first guide plate 321 can be blocked between the inlet 311 and the outlet 312, thereby preventing the process gas from entering the shell 310 from the inlet 311 and flowing directly to the outlet 312. On this basis, combined with extending the other end of the second guide plate 322 in a direction away from the outlet 312 (for example, from top to bottom in FIG1 ), on the one hand, the process gas entering the shell 310 from the inlet 311 can be blocked from flowing in a direction away from the inlet 311 (for example, from left to right in FIG1 ), so that the process gas can change direction and flow in a direction away from the outlet 312 after entering the inlet 311, thereby further preventing the process gas from flowing directly to the outlet 312 after entering the shell 310 from the inlet 311; on the other hand, the flow distance of the process gas in the shell 310 can be extended as much as possible.

[0041] Furthermore, in some embodiments, in the exhaust treatment device 300 shown in FIG1 , the angle between the orientation of the outlet 312 and the orientation of the inlet 311 is 90°, and the angle between the first guide plate 321 and the second guide plate 322 is 90°. However, the embodiments of the present application are not limited thereto. In actual applications, the angle between the orientation of the outlet 312 and the orientation of the inlet 311, as well as the angle between the first guide plate 321 and the second guide plate 322, can be set according to specific needs, as long as the process gas can be prevented from flowing directly to the outlet 312 after entering the housing 310 through the inlet 311, and the flow path of the process gas within the housing 310 can be extended.

[0042] In addition, the orientation of the outlet 312 and the orientation of the inlet 311 can be set according to the specific structure of the shell 310. In some embodiments, the shell 310 can be a vertical or horizontal container. For example, the shell 310 shown in Figure 1 is a vertical container. In this case, the outlet 312 can be located at the upper end of the shell 310, while the inlet 311 is set on the side wall of the shell 310. Of course, if it is a horizontal container, the outlet 312 can be located on the upper side wall of the shell 310, while the inlet 311 is set at the left or right end of the shell 310. It should be noted that the so-called vertical container means that the shell 310 has a side wall that surrounds the circumference, and the axis of the side wall is perpendicular to the horizontal plane. The so-called horizontal container means that the shell 310 has a side wall that surrounds the circumference, and the axis of the side wall is parallel to the horizontal plane.

[0043] In some embodiments, as shown in FIG1 , housing 310 includes a first housing 316 and a second housing 317. Both first and second housings 316 and 317 have circumferentially extending sidewalls. The first and second housings 316 and 317 are sealed together along one axial end of the sidewalls. An outlet 312 is located at the end of the first housing 316 axially distal from the second housing 317 along the sidewalls, and an inlet 311 is located on the sidewalls of the second housing 317. In one specific embodiment, the first housing 316 is located above the second housing 317. One axial end (i.e., the upper end) of the second housing 317 along its sidewalls is open. Correspondingly, one axial end (i.e., the lower end) of the first housing 316 along its sidewalls is open. The open ends of the first housing 316 and the second housing 317 are sealed together, forming an enclosed space within the housing 310. The outlet 312 is located at the end (i.e., the upper end) of the first housing 316 axially distal from the second housing 317 along the sidewalls, and the inlet 311 is located on the sidewalls of the second housing 317.

[0044] The shell 310 adopts a split structure (i.e., the shell 310 includes a first shell 316 and a second shell 317). The guide component 320 and the adsorption component 330 can be first installed in the second shell 317 and / or the first shell 316, and then the first shell 316 and the second shell 317 are sealed and connected, thereby reducing the difficulty of assembling the exhaust treatment device 300.

[0045] In some embodiments, the second deflector 322 separates the space enclosed by the sidewall of the second housing 317 into a first subspace and a second subspace. The end of the second deflector 322 distal to the outlet 312 is spaced apart from the second housing 317 to connect the first subspace with the second subspace distal to the outlet 312. Specifically, in some embodiments, the second deflector 322 is disposed axially along the sidewall of the second housing 317, extending from the top of the second housing 317 to a predetermined distance from the bottom of the second housing 317. The inlet 311 is located on the sidewall of the second deflector 322, and the first deflector 321 closes the opening of the second deflector 322 on the side closest to the inlet 311.

[0046] The first guide plate 321 is respectively connected to one end of the second guide plate 322 near the outlet 312 and the side wall of the second shell 317 to close the end of one of the above-mentioned first subspace and the second subspace near the outlet 312; one of the above-mentioned first subspace and the second subspace constitutes an inlet channel; the other end of the above-mentioned first subspace and the second subspace near the outlet 312 is connected to the space enclosed by the side wall of the first shell 316, and together constitute an outflow channel.

[0047] In the specific embodiment shown in Figures 1 and 2, the flow guide component 320 and the adsorption component 330 are installed within the second housing 317. Specifically, the second flow guide plate 322 extends axially downward along the sidewall of the second housing 317 to a predetermined distance from the bottom of the second housing 317. The second flow guide plate 322 defines an inlet channel and an outlet channel on either side. The inlet channel communicates with the inlet 311, and a communication port is formed between the second flow guide plate 322 and the bottom of the second housing 317, connecting the inlet channel and the outlet channel. The first flow guide plate 321 is sealedly connected to the second flow guide plate 322 and the inner wall of the second housing 317, sealing the top of the inlet channel. In the specific embodiment shown in Figures 3 and 4, the inlet channel has a semicircular cross-section, and the first flow guide plate 321 is also semicircular. The arcuate side of the first flow guide plate 321 is sealedly connected to the inner wall of the second housing 317, and the straight side of the first flow guide plate 321 is sealedly connected to the top of the second flow guide plate 322. After the process gas enters the inlet channel, it can only flow downward along the inlet channel, pass through the connecting port, flow upward along the outlet channel, and finally be discharged from the outlet 312. Of course, the flow guide component 320 can also be set to other structures according to user needs, which is not limited here.

[0048] In some embodiments, the adsorption component 330 includes a plurality of condensing sheets 331. The plurality of condensing sheets 331 are disposed on the second guide plate 322 and arranged in a direction away from the outlet 312. Each condensing sheet 331 forms an angle with the second guide plate 322. For example, each condensing sheet 331 forms a 90° angle with the second guide plate 322 and is arranged in a direction away from the outlet 312.

[0049] As shown in Figures 1 and 2, the process gas flows along the fluid channel, and the condensing sheet 331 can play a certain damping role, increase the resistance to the flow of the process gas, reduce the flow velocity of the process gas, and thus prolong the residence time of the process gas in the exhaust treatment device 300. Of course, the adsorption component 330 can also adopt other structures, such as a mesh structure, a porous block structure, etc., for setting the condensing sheet 331 on the inner wall of the shell 310 as needed, which is not limited here. The lengths of the multiple condensing sheets 331 extending relative to the second guide plate 322 can be the same or different, which is not limited here. In the case where the condensing sheet 331 is a circular sheet, the condensing sheet 331 is passed through the second guide plate 322 so that the first condensing sheet protrudes on both sides of the second guide plate 322. The diameters of each condensing sheet 331 can be the same or different.

[0050] Condensation sheet 331 can be made of stainless steel. Solid byproducts in the process gas adhere to the surface of condensation sheet 331 upon contact, thereby fully condensing and collecting the solid byproducts. Stainless steel offers advantages such as low cost and corrosion resistance. Condensation sheet 331 can also be made of other materials, which are not limited here.

[0051] In some embodiments, as shown in FIG3 , the condensing sheet includes at least two first condensing sheets 331 a, and the length of the at least two first condensing sheets 331 a extending from the second guide plate 322 gradually decreases as they move away from the outlet 312. If the condensing sheet 331 is a circular sheet, the first condensing sheet 331 a is disposed through the second guide plate 322 so that the first condensing sheets protrude on both sides of the second guide plate 322. The diameter of each first condensing sheet 331 a gradually decreases as it moves away from the outlet 312.

[0052] As shown in Figures 1 to 3, the first three condensing fins 331 arranged from top to bottom in the housing 310 are first condensing fins 331a. Each of the three first condensing fins 331a is circular and extends through the second guide plate 322 in a direction perpendicular to the second guide plate 322, such that the first condensing fins 331a protrude from both sides of the second guide plate 322. Furthermore, the diameters of the three first condensing fins 331a gradually decrease, thereby gradually reducing the length of the portions of the first condensing fins 331a protruding from both sides of the second guide plate 322. In other words, the gap between the outer edges of the first condensing fins 331a and the inner wall of the housing 310 gradually increases from top to bottom. This reduces the amount of process gas flowing toward the top of the inlet channel, allowing more process gas to flow downward. Specifically, to further reduce the amount of process gas flowing toward the top of the inlet channel, as shown in Figure 1, the height of the topmost first condensing fin 331a is generally no less than the height of the axis of the inlet 311.

[0053] In other embodiments, the lengths of the plurality of condensing sheets 331 extending relative to the second guide plate 322 may also be equal. Of course, the number of the first condensing sheets 331a and the lengths extending relative to the second guide plate 322 may be set according to the needs of the user and are not limited here. In addition, the first condensing sheet 331a may also be a condensing sheet of other shapes besides a circular sheet, such as an elliptical sheet. Moreover, the first condensing sheet 331a may be an integral condensing sheet. In this case, the condensing sheet may be provided through the second guide plate 322 so that the first condensing sheet 331a protrudes on both sides of the second guide plate 322. Alternatively, the first condensing sheet 331a may also be a split condensing sheet. In this case, the condensing sheet may include two sub-condensing sheets, which are respectively provided on both sides of the second guide plate 322. The shape of the two sub-condensing sheets is, for example, a semicircular sheet or a semi-elliptical sheet.

[0054] In some embodiments, the condensing sheet 331 further includes a plurality of second condensing sheets 331b, each of which is disposed on a side of all first condensing sheets 331a away from the outlet 312. The length of each second condensing sheet 331b extending from the second guide plate 322 is the same. Furthermore, the length of each second condensing sheet 331b extending from the second guide plate 322 is less than or equal to the minimum of the lengths of at least two first condensing sheets 331a extending from the second guide plate 322. For example, the second condensing sheets 331b and the first condensing sheets 331a are both circular sheets, and the diameters of all second condensing sheets 331b are equal and less than the minimum diameter of the first condensing sheets 331a.

[0055] In the specific embodiment shown in Figures 1 and 3, the second condensing sheet 331b is located below the first condensing sheet 331a. The second condensing sheet 331b and the first condensing sheet 331a are both circular sheets. The diameter of each first condensing sheet 331a gradually decreases as it moves away from the outlet 312. The diameter of each second condensing sheet 331b is equal and smaller than the diameter of the smallest first condensing sheet 331a. The process gas can pass through the gap between the second condensing sheet 331b and the inner wall of the housing 310. The process gas can flow downward in the inlet channel in the direction indicated by the arrow in Figure 1, pass through the gap between the second guide plate 322 and the bottom of the housing 310, enter the outlet channel, and flow upward in the direction indicated by the arrow in Figure 1, ultimately flowing out of the outlet 312.

[0056] Of course, the length of the second condensing sheet 331b extending from the second guide plate 322 can also be configured according to user needs. For example, in a specific embodiment in which the length of the first condensing sheet 331a extending from the second guide plate 322 gradually decreases in a direction away from the outlet 312, the length of the second condensing sheet 331b extending from the second guide plate 322 can also gradually decrease in a direction away from the outlet 312, and the maximum length of the second condensing sheet 331b extending from the second guide plate 322 is less than the minimum length of the first condensing sheet 331a extending from the second guide plate 322. In an embodiment in which the lengths of the first condensing sheet 331a extending from the second guide plate 322 are equal, the length of the second condensing sheet 331b extending from the second guide plate 322 is less than the length of the first condensing sheet 331a extending from the second guide plate 322. With this configuration, the distance between the second condensing sheet 331b and the inner wall of the housing 310 can be increased by reducing the length of the second condensing sheet 331b extending from the second guide plate 322, thereby reducing the resistance to the downward flow of the process gas in the inlet channel.

[0057] By gradually increasing the length of the multiple condensing sheets 331 extending from the second guide plate 322 from bottom to top, the resistance to gas flow can be further increased when the process gas flows out of the outlet channel, and the contact area between the adsorption component 330 and the process gas is increased, thereby fully absorbing the solid byproducts in the process gas. For example, the distance between the outer edge of the topmost condensing sheet 331 and the inner wall of the housing 310 is 10 mm, and this distance increases by 20 mm from top to bottom until it reaches 70 mm. Of course, the user can also set the distance between the outer edge of the condensing sheet 331 and the inner wall of the housing 310 as needed, which is not limited here.

[0058] In some embodiments, the cross section of the housing 310 perpendicular to the second guide plate 322 is circular, and the condenser sheet 331 is also circular. As shown in FIG3 , the condenser sheet 331 is inserted into the second guide plate 322 and welded to the second guide plate 322 to form a whole.

[0059] In some embodiments, each first condenser sheet 331a is perpendicular to the second guide plate 322, and the center of the orthographic projection of each first condenser sheet 331a passes through the center of the orthographic projection of the second guide plate 322 on a plane perpendicular to the second guide plate 322. In some embodiments, each second condenser sheet 331b is perpendicular to the second guide plate 322, and the center of the orthographic projection of each second condenser sheet 331b passes through the center of the orthographic projection of the second guide plate 322 on a plane parallel to the second guide plate 322. In this way, the lengths of the condenser sheets 331 extending from both sides of the second guide plate 322 can be the same. For example, in an embodiment where the condenser sheet 331 is a circular sheet, the center of the condenser sheet 331 can be located on the centerline of the second guide plate 322. As shown in Figure 5, a gap is provided between the outer edge of the condenser sheet 331 and the inner wall of the second shell 317, through which the process gas can flow up and down.

[0060] In some embodiments, during assembly, the second deflector 322 can first be welded to the condenser sheet 331 to form a single unit, and then welded to the first deflector 321. The deflector component 320 and the adsorption component 330 are then installed in the second housing 317. The first deflector 321 and the second deflector 322 can be sealed to the second housing 317 using a sealant. If necessary, the first deflector 321 and the second deflector 322 can be removed from the housing 310.

[0061] 1 and 2 , the housing 310 further includes a first clamp 318. The first housing 316 and the second housing 317 each have a first connecting edge and a second connecting edge extending radially outward, respectively. The first clamp 318 is used to clamp and secure the first connecting edge and the second connecting edge.

[0062] As shown in Figures 1 and 2, the first shell 316 and the second shell 317 are connected by a first clamp 318 at the first connecting edge and the second connecting edge to achieve a sealed connection. The clamp connection can reduce the difficulty of connecting the first shell 316 and the second shell 317 and reduce the cost of disassembly and assembly.

[0063] In some embodiments, the first clamp 318 may be a NW (Nominal Width) chain clamp. The NW chain clamp has the advantages of being easy to disassemble and reusable, and can quickly separate the first shell 316 and the second shell 317 during the disassembly process.

[0064] In some embodiments, the housing 310 further includes a first sealing ring located between the first housing 316 and the second housing 317. When the first clamp 318 connects the first housing 316 and the second housing 317, the first clamp 318 compresses the sealing ring from both sides, thereby achieving a seal between the first housing 316 and the second housing 317.

[0065] In the specific embodiment shown in Figures 1 and 2, liquid byproducts in the process gas adhere to the second guide plate 322 and flow along the second guide plate 322 to the bottom of the housing 310. Over time, the exhaust treatment device 300 accumulates more and more liquid byproducts at the bottom of the housing 310, necessitating regular cleaning of the liquid byproducts. In this specific embodiment, the second housing 317 is provided with a maintenance port 313 along its sidewall at one end axially distal from the first housing 316. The exhaust treatment device 300 also includes a sealing cover detachably connected to the maintenance port 313, with a second sealing ring disposed between the maintenance port 313 and the sealing cover.

[0066] As shown in Figure 2, a connecting flange 314 is provided along the sidewall of the second housing 317 at one end axially away from the first housing 316 and surrounding the maintenance port 313. A sealing cover is detachably connected to the connecting flange 314. To clean liquid byproducts, the sealing cover can be removed from the housing 310, allowing the liquid byproducts to be discharged from the maintenance port 313. After the liquid byproducts are cleaned, the sealing cover is fixedly connected to the connecting flange 314. A second sealing ring is positioned between the flange surface of the connecting flange 314 and the sealing cover. When the two are connected, the second sealing ring is compressed, thereby sealing the maintenance port 313.

[0067] In some embodiments, the housing 310 further includes a second clamp 319, which connects the connecting flange 314 to the sealing cover. As shown in FIG2 , the sealing cover can be specifically a blind plate 315, which is connected to the connecting flange 314 via the second clamp 319. This connection method improves the efficiency of assembly and disassembly between the connecting flange 314 and the blind plate 315. The second clamp 319 can also be a NW chain clamp to facilitate assembly and disassembly of the blind plate 315. Of course, users can also use other methods to connect the blind plate 315 to the connecting flange 314, such as bolts, which are not limited here.

[0068] In some embodiments, the process gas also includes incompletely reacted process gas, and the exhaust treatment device 300 is further configured to absorb the incompletely reacted process gas. An absorption liquid 340 is provided at the bottom of the housing 310 (i.e., the connection between the inlet and outlet channels) for absorbing the incompletely reacted process gas. As shown in FIG1 , the lower end of the second guide plate 322 is located above the liquid level of the absorption liquid 340. The process gas passes through the gap between the lower end of the second guide plate 322 and the liquid level of the absorption liquid 340. During the flow of the process gas, the process gas comes into contact with the absorption liquid 340, allowing the absorption liquid 340 to absorb the incompletely reacted process gas in the process gas. The distance between the lower end of the second guide plate 322 and the bottom of the housing 310 is typically 10 mm to 30 mm. A distance within this numerical range ensures smooth passage of the gas flow between the second guide plate 322 and the bottom of the housing 310 while allowing the incompletely reacted process gas and byproducts to be more fully absorbed.

[0069] In a specific embodiment of the present application, chemical vapor deposition adopts a tetraethoxysilane process. This process has process gases that are potentially not polymerized, and the process gases will continue to polymerize and deposit in the vacuum line 200 to form by-products. In order to prevent the by-products from being discharged into the vacuum line or vacuum pump after the exhaust treatment device 300, the exhaust treatment device 300 uses high-purity water as the absorption liquid 340. Tetraethoxysilane and water accelerate polymerization to form solid or liquid substances, so the process gases that are potentially not fully reacted can fully react at the bottom of the exhaust treatment device 300, and then be intercepted by the exhaust treatment device 300 and collected at the bottom of the exhaust treatment device 300. Of course, the exhaust treatment device 300 can also be applied to other processes. The bottom of the exhaust treatment device 300 can be combined with the specific process to store a medium that can collect by-products to intercept the incompletely reacted process gases that have potentially not generated by-products.

[0070] The present application also provides a semiconductor process equipment, including a reaction chamber 100, a flow control valve 400, and an exhaust treatment device 300 in any of the above-mentioned embodiments. As shown in FIG6 , the inlet 311 of the exhaust treatment device 300 is connected to the exhaust port of the reaction chamber 100 via a vacuum line 200, and the inlet of the flow control valve 400 is connected to the outlet of the exhaust treatment device 300, for controlling the flow of process gas. In this embodiment, the exhaust treatment device 300 is located in the front section of the flow control valve 400. The process gas does not need to pass through the flow control valve 400 before entering the exhaust treatment device 300, thereby shortening the gas flow and reducing the impact of blockage of the flow control valve 400 on the process gas treatment.

[0071] In some embodiments, the semiconductor process equipment may further include a vacuum pump (not shown), to which the outlet of the flow control valve 400 is connected. The operation of the vacuum pump generates negative pressure, which is transmitted via the exhaust treatment device 300 and vacuum line 200 to the exhaust port of the reaction chamber 100, thereby allowing process gases from the reaction chamber 100 to enter the exhaust treatment device 300 for recycling. The mechanisms of other components of the semiconductor process equipment can be referenced to existing technologies and will not be further described here.

[0072] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present application, and such modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. An exhaust treatment device, applied to semiconductor process equipment, characterized in that: It includes a shell, a flow guide component and an adsorption component, wherein: The shell includes an inlet and an outlet, the inlet is used to allow process gas exhausted from the reaction chamber to pass into the shell; The flow guide component is disposed in the housing and divides the interior of the housing into a fluid channel, wherein the fluid channel comprises an inlet channel and an outlet channel respectively connected to the inlet and the outlet, and the inlet channel is connected to the outlet channel; The adsorption component is partially disposed in the inlet channel, and the remaining portion of the adsorption component is disposed in the outlet channel for adsorbing by-products in the process gas.

2. The exhaust gas treatment device according to claim 1, characterized in that: The direction of the outlet forms an angle with the direction of the inlet; The guide component includes a first guide plate and a second guide plate at an angle, one end of the first guide plate is connected to the shell at a position between the inlet and the outlet, the other end of the first guide plate extends away from the inlet and is connected to one end of the second guide plate, and the other end of the second guide plate extends away from the outlet.

3. The exhaust gas treatment device according to claim 2, characterized in that: The shell includes a first shell and a second shell, and the first shell and the second shell both have a side wall that surrounds the circumference; the first shell and the second shell are sealedly connected along one axial end of the side wall, the outlet is located at one end of the first shell axially away from the second shell along the side wall, and the inlet is located on the side wall of the second shell.

4. The exhaust gas treatment device according to claim 3, characterized in that: The second deflector separates the space enclosed by the side wall of the second shell into a first subspace and a second subspace, and an end of the second deflector away from the outlet is spaced apart from the second shell to connect the first subspace with an end of the second subspace away from the outlet; The first guide plate is respectively connected to an end of the second guide plate close to the outlet and the side wall of the second shell to close an end of one of the first subspace and the second subspace close to the outlet; one of the first subspace and the second subspace constitutes the inlet channel; an end of the other of the first subspace and the second subspace close to the outlet is connected to the space enclosed by the side wall of the first shell, and together constitute the outflow channel.

5. The exhaust gas treatment device according to claim 2, characterized in that: The adsorption component includes a plurality of condensation sheets, which are all disposed on the second guide plate and arranged in a direction away from the outlet. Each of the condensation sheets forms an angle with the second guide plate.

6. The exhaust gas treatment device according to claim 5, characterized in that: The condensing plates include first condensing plates. There are at least two first condensing plates. The lengths of the at least two first condensing plates extending relative to the second guide plate gradually decrease in a direction away from the outlet.

7. The exhaust gas treatment device according to claim 6, characterized in that: The condensing sheet further includes a second condensing sheet, and the number of the second condensing sheets is multiple, and each second condensing sheet is arranged on a side of all the first condensing sheets away from the outlet, and each second condensing sheet extends the same length relative to the second guide plate; The length of each of the second condensing sheets extending relative to the second guide plate is less than or equal to the minimum length of at least two of the first condensing sheets extending relative to the second guide plate.

8. The exhaust gas treatment device according to claim 7, characterized in that: Each of the first condensing sheets is perpendicular to the second guide plate, and on a plane perpendicular to the second guide plate, the center of the orthographic projection of each of the first condensing sheets passes through the center of the orthographic projection of the second guide plate; or, Each of the second condensing plates is perpendicular to the second guide plate, and on a plane perpendicular to the second guide plate, the orthographic projection center of each of the second condensing plates passes through the orthographic projection center of the second guide plate.

9. The exhaust gas treatment device according to claim 3, characterized in that: The second shell is provided with a maintenance port at one end thereof axially away from the first shell along the side wall. The exhaust treatment device further comprises a sealing cover detachably connected to the maintenance port. A second sealing ring is provided between the maintenance port and the sealing cover.

10. The exhaust gas treatment device according to any one of claims 1 to 9, characterized in that: An absorption liquid is provided at the connection point between the inlet channel and the outlet channel for absorbing the incompletely reacted process gas.

11. A semiconductor process equipment, characterized in that: The invention comprises a reaction chamber, a flow control valve and the exhaust treatment device according to any one of claims 1 to 10, wherein the inlet of the exhaust treatment device is connected to the exhaust port of the reaction chamber, and the outlet of the exhaust treatment device is connected to the inlet of the flow control valve.

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