Substrate processing method and substrate processing apparatus

Abstract

The present invention provides a method for processing a substrate. The substrate processing method may include: a substrate processing step of supplying a first plasma, generated in a plasma generation space, to a processing space through a baffle assembly to process a substrate supported by a support unit in the processing space with the first plasma; and a neutralization step of removing residual charges of the substrate by supplying second plasma generated in the plasma generation space to the processing space through the baffle assembly while the substrate is supported by the support unit after the substrate processing step.

Description

Substrate processing method and substrate processing device

[0001] The present invention relates to a substrate processing method and a substrate processing device, and more particularly, to a method and device for processing a substrate using plasma.

[0002] Plasma is an ionized gaseous state composed of ions, radicals, and electrons, and is generated by extremely high temperatures, strong electric fields, or high-frequency electromagnetic fields. Semiconductor device manufacturing processes include ashing and etching processes that use plasma to remove films on substrates such as wafers.

[0003] Meanwhile, in removing a film on a substrate, among the ions, electrons, and radicals contained in plasma, primarily radicals can be utilized. In this case, a grounded baffle is provided between the plasma generation space where plasma is generated and the processing space where the substrate is processed, and the radicals within the plasma are supplied to the processing space through holes formed in the baffle.

[0004] Additionally, a power source applies an RF signal to the lower electrode of the substrate support unit, which supports the substrate, creating an electric field in the processing space. After plasma treatment of the substrate is completed, negative charges accumulate on the substrate's surface, creating a strong attractive force between the substrate and the lower electrode. If the substrate is forcibly lifted in this state, the attractive force between the substrate and the substrate support unit may damage the substrate.

[0005] The purpose of the present invention is to provide a substrate processing method and a substrate processing device capable of efficiently processing a substrate.

[0006] In addition, the present invention aims to provide a substrate treatment method and a substrate treatment device capable of neutralizing a substrate by discharging charges accumulated on the substrate after treating the substrate with plasma.

[0007] In addition, the present invention aims to provide a substrate processing method and a substrate processing device capable of controlling the ratio of ions included in plasma passing through a baffle assembly by changing the hole pattern and hole size of the baffle assembly.

[0008] In addition, the present invention aims to provide a substrate processing method and a substrate processing device capable of minimizing damage to a substrate when lifting the substrate from a substrate support unit.

[0009] The problems to be solved by the present invention are not limited to the problems described above, and problems not mentioned can be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the attached drawings.

[0010] The present invention provides a method for processing a substrate. The substrate processing method may include a substrate processing step of supplying a first plasma generated in a plasma generation space through a baffle assembly into a processing space and processing a substrate supported on a support unit within the processing space with the first plasma; and, after the substrate processing step, a neutralization step of supplying a second plasma generated in the plasma generation space through the baffle assembly into the processing space while the substrate is supported on the support unit, thereby removing residual charges on the substrate.

[0011] According to one embodiment, the ratio of ions among ions and radicals in the second plasma supplied to the processing space may be provided to be higher than the ratio of ions among ions and radicals in the first plasma supplied to the processing space.

[0012] In one embodiment, the baffle assembly includes an upper baffle having a plurality of upper holes formed therein extending vertically; and a lower baffle stacked with the upper baffle and having a plurality of lower holes formed therein extending vertically, wherein in the substrate processing step, when viewed from above, the upper holes and the lower holes are maintained at a first overlapping degree, and in the neutralizing step, when viewed from above, the upper holes and the lower holes are maintained at a second overlapping degree, and the second overlapping degree may be a higher degree of overlap between the upper holes and the lower holes than the first overlapping degree.

[0013] In one embodiment, the degree of overlap between the upper hole and the lower hole can be switched between the first degree of overlap and the second degree of overlap by changing the relative position of the upper baffle or the lower baffle.

[0014] In one embodiment, the relative position change of the upper baffle or the lower baffle can be achieved by rotating at least one of the upper baffle or the lower baffle.

[0015] In one embodiment, the substrate processing step may be a process of removing a thin film on the substrate using plasma.

[0016] In one embodiment, the thin film may be a hard mask.

[0017] In one embodiment, the support unit includes an electrostatic chuck, and further includes a loading step of placing the substrate on the support unit before the substrate processing step; and an unloading step of lifting the substrate from the support unit after the neutralizing step; wherein the loading step may be a step of chucking the substrate on the electrostatic chuck, and the unloading step may be a step of dechucking the substrate from the electrostatic chuck.

[0018] In one embodiment, the support unit further includes a high-frequency power supply that applies high-frequency power, and in the substrate processing step, the high-frequency power supply generates plasma in the processing space, and after the substrate processing step is completed, the high-frequency power supply is turned off and the neutralization step is performed.

[0019] In one embodiment, a processing gas is supplied to the plasma generation space to generate plasma, and the processing gas supplied to the plasma generation space in the substrate processing step and the neutralization step may be the same gas.

[0020] The present invention also provides a method for processing a substrate. The substrate processing method includes a loading step of placing a substrate on a support unit within a processing space; a substrate processing step of supplying a first plasma generated in a plasma generation space through a baffle assembly into the processing space after the loading step, thereby processing the substrate with the first plasma; a neutralization step of supplying a second plasma generated in the plasma generation space through the baffle assembly into the processing space while the substrate is supported on the support unit, thereby removing residual charges of the substrate; and an unloading step of lifting the substrate from the support unit after the neutralization step, wherein the ratio of ions and radical ions in the second plasma supplied to the processing space may be provided to be higher than the ratio of ions and radical ions in the first plasma supplied to the processing space.

[0021] In one embodiment, the support unit further includes a high-frequency power supply that applies high-frequency power, and in the substrate processing step, the high-frequency power supply generates plasma in the processing space, and after the substrate processing step is completed, the high-frequency power supply is turned off and the neutralization step is performed.

[0022] In one embodiment, the baffle assembly includes an upper baffle having a plurality of upper holes formed therein extending vertically; and a lower baffle stacked with the upper baffle and having a plurality of lower holes formed therein extending vertically, wherein in the substrate processing step, when viewed from above, the upper holes and the lower holes are maintained at a first overlapping degree, and in the neutralizing step, when viewed from above, the upper holes and the lower holes are maintained at a second overlapping degree, and the second overlapping degree may be a higher degree of overlap between the upper holes and the lower holes than the first overlapping degree.

[0023] In one embodiment, the degree of overlap between the upper hole and the lower hole can be switched between the first degree of overlap and the second degree of overlap by changing the relative position of the upper baffle or the lower baffle.

[0024] In one embodiment, the relative position change of the upper baffle or the lower baffle can be accomplished by rotating at least one of the upper baffle or the lower baffle.

[0025] The present invention also provides a device for processing a substrate. The substrate processing device comprises: a processing room having a processing space for processing a substrate therein; a support unit for supporting a substrate in the processing space; a plasma generation room provided outside the processing room and having a plasma generation space for generating plasma from a processing gas; a baffle assembly disposed between the processing space and the plasma generation space; and a controller, wherein the baffle assembly comprises: an upper baffle having a plurality of upper holes extending vertically therethrough; a lower baffle stacked with the upper baffle and having a plurality of lower holes extending vertically therethrough; a driving unit for changing relative positions of the upper baffle and the lower baffle; Including, the controller controls the driving unit so that a substrate processing step of processing a substrate by supplying a first plasma to the processing space while the upper hole and the lower hole are maintained at a first overlapping degree when viewed from above, and a neutralization step of removing residual charge of the substrate by supplying a second plasma to the processing space while the upper hole and the lower hole are maintained at a second overlapping degree after the substrate processing step are sequentially performed, and the second overlapping degree may be a higher overlapping degree of the upper hole and the lower hole than the first overlapping degree.

[0026] In one embodiment, the drive unit can adjust the hole pattern and hole size of the baffle assembly by rotating at least one of the upper baffle or the lower baffle.

[0027] In one embodiment, the support unit may further include a high-frequency power source that applies high-frequency power to the support unit.

[0028] In one embodiment, in the substrate processing step, the hole size of the baffle assembly may be smaller than the size of the sheath around the hole of the baffle assembly.

[0029] In one embodiment, in the neutralizing step, the controller can adjust the hole size of the baffle assembly to be larger than the size of the sheath around the hole of the baffle assembly.

[0030] According to one embodiment of the present invention, a substrate can be efficiently processed.

[0031] In addition, according to one embodiment of the present invention, after treating the substrate with plasma, the charge accumulated on the substrate can be quickly discharged to neutralize the substrate.

[0032] Additionally, according to one embodiment of the present invention, the ratio of ions included in plasma passing through the baffle assembly can be controlled by changing the hole pattern and hole size of the baffle assembly.

[0033] Additionally, according to one embodiment of the present invention, damage to the substrate can be minimized when lifting the substrate from the substrate support unit.

[0034] The effects of the present invention are not limited to the effects described above, and effects not mentioned can be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the attached drawings.

[0035] Figure 1 is a drawing showing a photoresist film formed on a substrate.

[0036] Figure 2 is a drawing showing a hard mask film formed on a substrate.

[0037] FIG. 3 is a drawing showing a substrate processing device according to one embodiment of the present invention.

[0038] FIG. 4 is a flow chart showing one embodiment of a method for processing a substrate using the substrate processing device of FIG. 3.

[0039] Fig. 5 is a schematic drawing showing the appearance of the substrate processing device of Fig. 3 when performing the substrate processing step of Fig. 4.

[0040] Figure 6 is an enlarged view of the baffle assembly of Figure 5.

[0041] Figures 7 to 9 are schematic drawings showing the appearance of the substrate processing device of Figure 3 when performing the neutralization step of Figure 4.

[0042] Fig. 10 is an enlarged view of the baffle assembly of Fig. 9.

[0043] Fig. 11 is a schematic drawing showing the appearance of the substrate processing device of Fig. 3 when performing the unloading step of Fig. 4.

[0044] Figures 12 to 14 illustrate a substrate processing device according to another embodiment of the present invention.

[0045] Fig. 15 illustrates a substrate processing device according to another embodiment of the present invention.

[0046] The various features and advantages of the non-limiting embodiments of this disclosure will become more apparent upon review of the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the claims. The accompanying drawings are not to scale unless explicitly stated otherwise. Various dimensions in the drawings may be exaggerated for clarity.

[0047] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. These exemplary embodiments are provided so that this disclosure will be thorough and will fully convey the scope of the present disclosure to those skilled in the art. To provide a thorough understanding of the embodiments of the present disclosure, numerous specific details, such as examples of specific components, devices, and methods, are set forth. It will be apparent to those skilled in the art that specific details are not necessarily required, and that the exemplary embodiments can be implemented in many different forms, and neither should be construed as limiting the scope of the present disclosure. In some exemplary embodiments, well-known processes, well-known device structures, and well-known techniques are not described in detail.

[0048] The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the example embodiments. As used herein, the singular or non-plural forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "including," and "having" are open-ended and thus specify the presence of stated features, elements, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, elements, steps, operations, elements, components, and / or groups thereof. The method steps, processes, and operations herein are not necessarily to be construed as necessarily being performed in the particular order discussed or described, unless such order is explicitly stated. Additionally, additional or alternative steps may be selected.

[0049] When an element or layer is referred to as being "on," "connected," "joined," "attached," "adjacent," or "covering" another element or layer, it is intended that it is directly on, connected, joined, attached, adjacent, or covering said other element or layer, or that intermediate elements or layers may be present. Conversely, when an element is referred to as being "directly on," "directly connected to," or "directly coupled to" another element or layer, it should be understood that no intermediate elements or layers are present. Like reference numerals refer to like elements throughout the specification. The term "and / or" as used herein includes all combinations and subcombinations of one or more of the listed items.

[0050] Although terms such as first, second, third, etc. may be used herein to describe various elements, regions, layers, and / or sections, it should be understood that these elements, regions, layers, and / or sections are not limited by these terms. These terms are used merely to distinguish one element, region, layer, or section from another element, region, layer, or section. Thus, a first element, a first region, a first layer, or a first section discussed below could also be referred to as a second element, a second region, a second layer, or a second section without departing from the teachings of the exemplary embodiments.

[0051] Spatially relative terms (e.g., "beneath," "beneath," "lower," "above," "top," etc.) may be used for convenience of description to describe the relationship of one element or feature to other element(s) or features as depicted in the drawings. It should be understood that spatially relative terms are intended to encompass not only the orientation depicted in the drawings, but also other orientations of the device in use or operation. For example, if the device in the drawings were turned over, elements described as "beneath" or "below" other elements or features would then be oriented "above" the other elements or features. Thus, the term "beneath" can encompass both above and below orientations. The device can be oriented differently (rotated 90 degrees, or at other orientations), and the spatially relative descriptive phrases used herein can be interpreted accordingly.

[0052] When using the terms "same" or "same" in the description of embodiments, it should be understood that there may be some inaccuracy. Therefore, when one element or value is referred to as being the same as another element or value, it should be understood that the element or value is the same as the other element or value within a manufacturing or operating tolerance (e.g., ±10%).

[0053] When the terms "approximately" or "substantially" are used herein in connection with a numerical value, it should be understood that the numerical value includes manufacturing or operating tolerances (e.g., ±10%) of the stated value. Furthermore, when the terms "typically" and "substantially" are used in connection with geometrical shapes, it should be understood that geometrical accuracy is not required, but that latitude in the shape is within the disclosed scope.

[0054] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments pertain. Furthermore, terms, including terms defined in commonly used dictionaries, should be interpreted to have a meaning consistent with their meaning within the context of the relevant art, and will not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0055] Hereinafter, a substrate processing device and a substrate processing method according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 8. The substrate (W) described below may be a wafer. Processing the substrate (W) may mean not only processing the substrate (W), but also removing a film or the like formed on the substrate (W).

[0056] For example, a substrate processing device can etch a thin film on a substrate (W). The thin film can be a variety of films, such as a polysilicon film, a silicon oxide film, or a silicon nitride film. Additionally, the thin film can be a natural oxide film or a chemically generated oxide film.

[0057] Fig. 1 is a drawing showing a photoresist film formed on a thin film (2) on a substrate, and Fig. 2 is a drawing showing a hard mask film formed on a thin film (2) on a substrate.

[0058] As described below, a first film (e.g., a photoresist thin film) may be formed on the substrate as illustrated in FIG. 1, and a second film (e.g., a hard mask thin film) may be formed on the substrate as illustrated in FIG. 2. In FIG. 2, an example in which both the first film (photoresist thin film) and the second film (hard mask thin film) are formed on the substrate is described, but in some cases, only the second film (hard mask thin film) among the first film (photoresist thin film) and the second film (hard mask thin film) may be formed on the substrate. The hard mask thin film may be an amorphous carbon layer (ACL). The amorphous carbon thin film (ACL) may be a boron-doped amorphous carbon layer (BACL).

[0059] The substrate processing method described below may be a manufacturing method for manufacturing a semiconductor device. The substrate processing method may include at least one process among various processes required for manufacturing a semiconductor device.

[0060] FIG. 3 is a drawing showing a substrate processing device according to one embodiment of the present invention.

[0061] Referring to FIG. 3, a substrate processing device (10) according to an embodiment of the present invention may include a chamber (100), a baffle assembly (200), a support unit (300), a lower power unit (400), a source unit (500), a gas supply unit (600), an exhaust device (700), an ionization device (800), and a controller (900).

[0062] The chamber (100) may include a processing chamber (110) defining a processing space (112) and a plasma generation chamber (120) defining a plasma generation space (122). The plasma generation chamber (120) may be provided outside the processing chamber (110). The processing chamber (110) and the plasma generation chamber (120) may be arranged in a vertical direction. The processing chamber (110) may be installed below the plasma generation chamber (120). In the processing space (112), a processing process for a substrate (W) is performed, and in the plasma generation space (122), a source unit (500) described below may generate plasma from a process gas supplied by a gas supply unit (600) described below. The processing chamber (110) may be grounded. A current of an electric field formed by a bias power applied by a lower power unit (400) described below may flow to the ground through the processing chamber (110).

[0063] An unillustrated entrance / exit may be formed in the processing room (110). Through the entrance / exit, a substrate (W) may be introduced into or removed from the processing space (112). The entrance / exit may be selectively opened / closed by a door.

[0064] The plasma generation room (120) can provide a plasma generation space (122) in which plasma (P) described later is generated. Although plasma (P) can also be generated in the processing space (112) by the lower power unit (400), the plasma (P) provided for processing the substrate (W) can be generated in the plasma generation space (122).

[0065] The plasma generation space (122) can be in fluid communication with the treatment space (112). Plasma (P) generated in the plasma generation space (122) can flow from the plasma generation space (122) to the treatment space (112).

[0066] A gas supply unit (600) described later supplies process gas to the plasma generation space (122), and a source unit (400) can excite the process gas to generate plasma (P).

[0067] The baffle assembly (200) can be installed between the processing space (112) and the plasma generation space (122). The baffle assembly (200) can be installed between the processing space (112) and the plasma generation space (122) to partition the two spaces. The baffle assembly (200) can define the processing space (112) together with the processing chamber (110). In addition, the baffle assembly (200) can define the plasma generation space (122) together with the plasma generation chamber (120).

[0068] The baffle assembly (200) includes an upper baffle (210), a lower baffle (220), and a driving unit (230). The upper baffle (210) and the lower baffle (220) may each have a plate shape. The upper baffle (210) may be formed with a plurality of upper holes (212) that vertically penetrate the upper baffle (210). The lower baffle (220) may be formed with a plurality of lower holes (222) that vertically penetrate the lower baffle (220). The upper baffle (210) may be stacked on the lower baffle (220), but may be provided at a predetermined distance apart from each other so that the relative position can be changed by the driving unit (230) described later.

[0069] The processing space (112) and the plasma generation space (122) can be communicated with each other through a plurality of holes (212, 222) formed in the upper baffle (210) and the lower baffle (220) of the baffle assembly (200). Plasma generated in the plasma generation space (122) can be introduced into the processing space (112) through the holes (212, 222) formed in the baffle assembly (200). That is, the plasma generated in the plasma generation space (122) can be introduced into the processing space (112) by sequentially passing through the upper hole (212) of the upper baffle (210) and the lower hole (222) of the lower baffle (220).

[0070] The baffle assembly (200) can be grounded. The upper baffle (210) and the lower baffle (220) can each be grounded and electrically grounded with the grounded chamber (100).

[0071] The plasma generated in the plasma generation space (122) may include ions and radicals. In the process in which the plasma generated in the plasma generation space (122) flows into the processing space (112) through the holes (212, 222) formed in the upper baffle (210) and the lower baffle (220), at least some of the ions contained in the plasma may be trapped by the grounded baffle assembly (200).

[0072] The upper baffle (210) and the lower baffle (220) can be manufactured from a material including metal. The upper baffle (210) and the lower baffle (220) can be manufactured from a conductive material.

[0073] The upper hole (212) formed in the upper baffle (210) and the lower hole (222) formed in the lower baffle (220) may be formed at a certain interval along the circumferential direction of the upper baffle (210) and the lower baffle (220), respectively.

[0074] The upper hole (212) formed in the upper baffle (210) and the lower hole (222) formed in the lower baffle (220) may have a generally circular shape. The diameter of the holes (212, 222) may be varied depending on the ratio of radicals to be transferred to the substrate (W), etc. Alternatively, the holes (212, 222) may have an oval shape or a rectangular shape having a first width (D1) and a second width (D2). The first width (D1) and the second width (D2) may be varied depending on the ratio of radicals to be transferred to the substrate (W), etc. That is, an operator may selectively install the upper baffle (210) and the lower baffle (220) having holes (212, 222) having various sizes, shapes, etc., in the substrate processing device (10) according to the requirements required to process the substrate (W).

[0075] The driving unit (230) changes the relative positions of the upper baffle (210) and the lower baffle (220). The driving unit (230) moves either the upper baffle (210) or the lower baffle (220) relative to the other, thereby changing the degree of overlap of the upper hole (212) and the lower hole (222).

[0076] The drive unit (230) may include a motor. The drive unit (230) may be a servo motor. As illustrated in FIG. 3, the drive unit (230) may be connected to one side of the lower baffle (220) to rotate the lower baffle (220). When the drive unit (230) rotates the lower baffle (220), the degree of overlap between the upper hole (212) formed in the upper baffle (210) and the lower hole (222) formed in the lower baffle (220) when viewed from above, in other words, the hole pattern of the baffle assembly (200) may change. As the hole pattern of the baffle assembly (200) changes, the hole size of the baffle assembly (200), i.e., the size of the hole created by the overlapping of the upper hole (212) and the lower hole (222) when viewed from above, may change.

[0077] In this way, in the process in which plasma generated in the plasma generation space (122) flows into the processing space (112) through the holes (212, 222) formed in the upper baffle (210) and the lower baffle (220), the degree of overlap between the upper hole (212) and the lower hole (222), i.e., the hole pattern and hole size of the baffle assembly (200), may change the rate at which ions included in the plasma pass through the baffle assembly (200) and flow into the processing space (112).

[0078] The support unit (300) can support the substrate (W). The support unit (300) can support the substrate (W) in the processing space (112). The support unit (300) can include an electrostatic chuck (310) and a lower electrode (320).

[0079] An electrostatic chuck (310) can chuck a substrate (W). The electrostatic chuck (310) can have a dielectric plate (311) and an electrostatic electrode (312). The dielectric plate (311) can provide a seating surface on which the substrate (W) is placed. An electrostatic electrode (312) can be embedded inside the dielectric plate (311). The electrostatic electrode (312) can receive power from a chucking power source (not shown), which can be a DC power source, to generate an electrostatic force for chucking the substrate (W).

[0080] The lower electrode (320) may be placed below the electrostatic chuck (310). The lower electrode (320) may be made of a material including metal. A lower electrode unit (300) described later may be connected to the lower electrode (320). A flow path (321) may be formed in the lower electrode (320). A cooling fluid such as cooling water or cooling gas may flow through the flow path (321). A fluid supply line (322) for supplying the cooling fluid may be connected to one end of the flow path (321), and a fluid recovery line (323) for recovering the cooling fluid may be connected to the other end.

[0081] The lower power unit (400) can apply high-frequency RF power to the lower electrode (320). The lower power unit (400) can apply bias power to the lower electrode (320). The lower power unit (400) can include a second power source (410) and a second matching device (420). The second power source (410) can be a bias power source. The second power source (410) can apply second power having a second frequency to the lower electrode (320). The second matching device (420) can perform impedance matching so that the power of the second power source (410) can be effectively transmitted to the lower electrode (320).

[0082] The RF power applied by the lower power unit (400) can improve the processing efficiency for the substrate (W) by controlling the flow of plasma (P) containing at least one of ions, electrons, and radicals flowing into the processing space (112). In addition, the RF power applied by the lower power unit (400) can generate plasma (P) by exciting the process gas supplied to the processing space (112).

[0083] The source unit (500) can generate plasma (P) in the plasma generation space (122). The source unit (500) can generate plasma (P) in the plasma generation space (122) by exciting a process gas supplied by a gas supply unit (600) described later.

[0084] The source unit (500) may include a coil (510), a first power source (520), and a first matcher (530).

[0085] The coil (510) may be configured to surround the plasma generation chamber (120). The coil (510) may be provided on the outside of the plasma generation chamber (120). The number of turns of the coil (510) surrounding the plasma generation chamber (120) may vary depending on the strength of the electric field required in the processing space (122). The coil (510) may receive power from a first power source (520) and form an electric field in the plasma generation space (122). The electric field formed in the plasma generation space (122) may excite a process gas to generate plasma (P). The coil (510) may also be referred to as an upper electrode.

[0086] The first power source (520) can apply RF power to the coil (510). The first power source (520) can apply first power having a first frequency that is different from the second frequency described above to the coil (510). The first frequency may be a higher frequency than the second frequency. The first power source (520) may be a source power source. The first matcher (530) can perform impedance matching so that the power of the first power source (520) can be effectively transferred to the coil (510).

[0087] Although not shown, the substrate processing device (10) may further include an impedance control unit, and the impedance control unit may be configured to form a resonant circuit for a first frequency and a second frequency. The impedance control unit may include a sensor (S), an inductor (L1), a first capacitor (C1), and a second capacitor (C2).

[0088] The gas supply unit (600) can supply process gas to the plasma generation space (122) and / or the treatment space (112). The gas supply unit (600) can include a gas supply source (610) and a gas supply line (620). The gas supply source (610) can supply and / or store process gas. The gas supply line (620) can be connected to the upper portion of the plasma generation chamber (120). The gas supply source (610) can supply process gas to the plasma generation space (122) through the gas supply line (620).

[0089] Most of the process gas supplied to the plasma generation space (122) can be excited into a plasma (P) state by the source unit (500). Some of the process gas cannot be excited in the plasma generation space (122) and may flow into the processing space (112). The process gas introduced into the processing space (112) can be excited into a plasma (P) state by the lower power unit (400).

[0090] The exhaust device (700) can exhaust the processing space (112). The exhaust device (700) can be connected to the lower part of the processing room (110). The exhaust device (700) can be a pump. An exhaust hole (not shown) is formed at the lower part of the processing room (110), and the exhaust device (700) can exhaust the processing space (112) through the exhaust hole. The exhaust device (700) can reduce the pressure of the processing space (112). Process byproducts or impurities within the processing space (112) can be discharged to the outside of the processing room (110) through the exhaust device. The exhaust device (700) can reduce the pressure of the processing space (112) to form a descending flow in the plasma generation space (122) and / or the processing space (112). The exhaust device (700) can help the pressure in the processing space (112) reach a pressure close to vacuum while the process is being performed.

[0091] The controller (900) can control the substrate processing device (10). The controller (900) can control the components of the substrate processing device (10). For example, the controller (900) can generate a control signal that controls the support unit (300), the lower power unit (400), the source unit (500), the gas supply unit (600), and the exhaust device (700).

[0092] The controller (900) may be equipped with a process controller comprising a microprocessor (computer) that executes control of the substrate processing device (10), a user interface comprising a keyboard through which an operator performs command input operations, etc. to manage the substrate processing device (10), a display that visually displays the operating status of the substrate processing device (10), a control program for executing processing executed in the substrate processing device under the control of the process controller, or a memory unit in which a program for executing processing in each component according to various data and processing conditions, i.e., a processing recipe, is stored. In addition, the user interface and the memory unit may be connected to the process controller. The processing recipe may be stored in a storage medium among the memory units, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as a flash memory.

[0093] The substrate processing device (10) can generate plasma (P) to process the substrate (W), for example, to perform an etching process or a strip process to remove a film formed on the substrate (W).

[0094] FIG. 4 is a flow chart showing one embodiment of a method for processing a substrate using the substrate processing device of FIG. 3.

[0095] Referring to FIGS. 3 and 4, a substrate processing method according to an embodiment of the present invention includes a loading step (S10), a substrate processing step (S20), a neutralization step (S30), and an unloading step (S40), and the neutralization step (S30) may include a hole pattern adjustment step (S32) and a discharge step (S34).

[0096] In the loading step (S10), the substrate (W) can be brought into the processing space (112) by a transport robot (not shown). The substrate (W) brought into the processing space (112) can be placed on the support unit (300). The electrostatic chuck (310) can generate electrostatic force to chuck the substrate (W).

[0097] When the loading step (S10) is completed and the substrate (W) is loaded into the support unit (300), the substrate processing step (S20) is performed.

[0098] In the substrate processing step (S20), plasma (P) is supplied to the processing space (112) to process the substrate (W). Fig. 5 is a schematic drawing showing the appearance of the substrate processing device of Fig. 3 when performing the substrate processing step of Fig. 4, and Fig. 6 is an enlarged drawing showing the appearance of the baffle assembly of Fig. 5.

[0099] Referring to FIGS. 5 and 6, the gas supply unit (600) supplies a process gas to the plasma generation space (122), and the source unit (500) can generate plasma (P) by exciting the process gas. The first power source (520) of the source unit (500) can apply a second power having a first frequency (e.g., 13.56 MHz) to the coil (510). The plasma (P) generated in the plasma generation space (122) can include ions, electrons, and radicals. Among these, the radicals can generally pass through the baffle assembly (200) and flow into the processing space (112). In addition, the process gas that is not excited into a plasma (P) state in the plasma generation space (122) can pass through the baffle assembly (200) and flow into the processing space (112).

[0100] In the substrate processing step (S20), the controller (900) controls the baffle assembly (200) so that the degree of overlap between the upper hole (212) and the lower hole (222) is maintained at the first degree of overlap. That the degree of overlap between the upper hole (212) and the lower hole (222) is maintained at the first degree of overlap may refer to a state in which, when viewed from above, the area of ​​the passageway connected between the plasma generation space (122) and the processing space (112) is relatively narrower than when the upper hole (212) and the lower hole (222) partially overlap each other and are at the second degree of overlap described later. When the degree of overlap between the upper hole (212) formed in the upper baffle (210) and the lower hole (222) formed in the lower baffle (220) as viewed from above is the first degree of overlap, in other words, when the hole pattern of the baffle assembly (200) maintains the first degree of overlap, the hole size of the baffle assembly (200) may be smaller than the size of the sheath around the holes (212, 222) of the baffle assembly (200). That is, the diameter of the hole created by the overlapping of the upper hole (212) and the lower hole (222) of the baffle assembly (200) may be shorter than the length of the sheath around the hole. When plasma (P) generated in the plasma generation space (122) passes through the baffle assembly (200) and is supplied to the processing space (112), most of the ions contained in the plasma (P) do not pass through the baffle assembly (200) due to the small hole size and are trapped, and the first plasma (P1) is supplied to the processing space (112).

[0101] Radicals introduced into the processing space (112) can remove a film on the substrate (W). In addition, the process gas introduced into the processing space (112) can be partially excited into plasma (P) by an electric field formed by a second power source (410), which is a bias power source. The second power source (410) can apply a second power having a second frequency (e.g., 2 MHz) to the lower electrode (320).

[0102] The plasma (P) removes a film on the substrate (W). As described above, the film on the substrate (W) may include at least one of a first film (photoresist film) or a second film (hardmask film), as illustrated in FIGS. 1 and 2.

[0103] During the processing step (S20) of processing the substrate using plasma, since the mobility of electrons in the processing space (112) is faster than that of ions, negative charges are accumulated on the substrate (W) and a negative voltage is applied. The negative voltage applied at this time is called a self-negative voltage (DC Self Bias).

[0104] When the processing step (S20) is completed, the second power source (410) is turned off, and the generation of plasma in the processing space (112) is stopped. Even if the RF signal does not flow to the lower electrode (320), a strong attractive force due to the voltage difference is formed between the substrate and the lower electrode (320) because negative charges are accumulated on the substrate (W). If the substrate (W) is unloaded from the support unit (300) immediately after the processing step (S20) is completed, the substrate may be damaged due to the attractive force between the substrate (W) and the lower electrode (320) of the support unit (300). Therefore, after the processing step (S20), a neutralization step (S30) is performed to remove and neutralize the residual charges accumulated on the substrate (W).

[0105] FIGS. 7 to 9 are schematic drawings showing the appearance of the substrate processing device of FIG. 3 when performing the neutralization step of FIG. 4, and FIG. 10 is an enlarged drawing showing the baffle assembly of FIG. 9.

[0106] Below, the neutralization step (S30) is described with reference to FIGS. 7 to 10.

[0107] Referring to Fig. 7, before the neutralization step (S30) is performed, the second power source (410) is turned off and the generation of plasma in the processing space (112) is stopped. Thereafter, the hole pattern adjustment step (S32) is performed during the neutralization step (S30).

[0108] As illustrated in FIG. 8, in the hole pattern adjustment step (S32), the driving unit (230) rotates the lower baffle (220) to change the degree of overlap between the upper hole (212) formed in the upper baffle (210) and the lower hole (222) formed in the lower baffle (220), in other words, the hole pattern of the baffle assembly (200). The driving unit (230) changes the hole pattern of the baffle assembly (200) from the first degree of overlap to the second degree of overlap. A state in which the hole pattern of the baffle assembly (200) is in the second degree of overlap is a state in which the degree of overlap between the upper hole (212) and the lower hole (222) is higher than a state in which the hole pattern of the baffle assembly (200) is in the first degree of overlap. That is, the state in which the degree of overlap between the upper hole (212) and the lower hole (222) is the second degree of overlap may refer to a case in which the area of ​​the passageway connecting the plasma generation space (122) and the processing space (112) is relatively larger than that in the first degree of overlap described above. For example, when the degree of overlap between the upper hole (212) and the lower hole (222) is changed to the second degree of overlap, the upper hole (212) and the lower hole (222) may completely overlap and appear as one hole when viewed from above.

[0109] When the degree of overlap between the upper hole (212) formed in the upper baffle (210) and the lower hole (222) formed in the lower baffle (220) is the second degree of overlap, in other words, when the hole pattern of the baffle assembly (200) is in the second degree of overlap, the hole size of the baffle assembly (200) may be larger than the size of the sheath around the holes (212, 222) of the baffle assembly (200). That is, the diameter of the hole created by the overlapping of the upper hole (212) and the lower hole (222) of the baffle assembly (200) may be larger than the length of the sheath around the hole. When plasma (P) generated in the plasma generation space (122) passes through the baffle assembly (200) and is supplied to the processing space (112), a significant number of ions included in the plasma (P) pass through the baffle assembly (200), and as shown in FIGS. 9 and 10, the second plasma (P2) is supplied to the processing space (112).

[0110] According to the above, the second plasma (P2) supplied to the processing space (112) in the neutralization step (S30) is provided with a higher ratio of ions contained in the plasma than the first plasma (P1) supplied to the processing space (112) in the substrate processing step (S20). That is, the ratio of ions among ions and radicals in the second plasma (P2) supplied to the processing space (112) is provided with a higher ratio than the ratio of ions among ions and radicals in the first plasma (P1) supplied to the processing space (112). This is because the size of the hole pattern of the baffle assembly (200) in the neutralization step (S30) is larger than the size of the hole pattern of the baffle assembly (200) in the substrate processing step (S20) and is larger than the length of the sheath around the holes of the baffle assembly (200), so that it is easier for the ions to pass through the baffle assembly (200) in the neutralization step (S30).

[0111] When the hole pattern adjustment step (S32) is completed, the precipitation step (S34) is performed.

[0112] In the discharge step (S34), the charge accumulated on the substrate (W) can be discharged. Specifically, ions (particularly positive ions) contained in the second plasma (P2) supplied to the processing space (112) can neutralize the substrate (W) and rapidly discharge the charge on the substrate (W). When the discharge step (S34) is completed, the gas supply unit (600) stops supplying the process gas, the first power source (520) is turned off, the generation and supply of plasma are stopped, and the neutralization step (S30) is completed.

[0113] When the neutralization step (S30) is completed, the unloading step (S40) is performed. Fig. 11 is a schematic diagram showing the appearance of the substrate processing device of Fig. 3 when performing the unloading step of Fig. 4.

[0114] Referring to FIG. 11, in the unloading step (S40), the electrostatic chuck (310) can dechucking the substrate (W) and lifting the substrate (W) from the support unit (300) to remove it from the processing space (112).

[0115] As described above, by performing a neutralization step (S30) for adjusting the hole pattern of the baffle assembly (200) and selectively passing ions through it before unloading the substrate (W) from the support unit (300) after the processing step (S20), thereby discharging the charge accumulated on the substrate (W), damage to the substrate (W) due to the electrical attraction between the substrate (W) and the electrostatic chuck (310) during the unloading process of the substrate (W) can be minimized.

[0116] In addition, the drive unit (230) can switch the degree of overlap of the upper hole (212) and the lower hole (222) between the first degree of overlap and the second degree of overlap by changing the relative position of the upper baffle (210) or the lower baffle (220), can control the ratio of ions included in the plasma passing through the baffle assembly by changing the hole pattern and hole size of the baffle assembly (200), and can neutralize the substrate by quickly discharging the charge accumulated on the substrate after treating the substrate with plasma.

[0117] In the above-described example, when the degree of overlap between the upper hole (212) and the lower hole (222) is the second degree of overlap, the upper hole (212) and the lower hole (222) are completely overlapped and can appear as one hole when viewed from above. However, the present invention is not limited thereto. The above-described second degree of overlap state is sufficient if it is any one of the states in which the degree of overlap between the upper hole (212) and the lower hole (222) is higher than the first degree of overlap state in the substrate processing step (S20).

[0118] In the above example, the upper electrode is described as a coil (510), but it is not limited thereto. For example, the upper electrode may be provided as an electrode plate having a plate shape.

[0119] In the above-described embodiment, it is illustrated and described that plasma (P) is excited by the electric field formed by the second power source (410), which is a bias power source, not only in the plasma generation space (122) but also in the processing space (112), but it is not limited thereto. For example, the plasma (P) may be excited only in the plasma generation space (122) and introduced into the processing space (112) through the baffle assembly (200).

[0120] In the above-described embodiment, the driving unit (230) is illustrated and described as being connected to one side of the lower baffle (220) to rotate the lower baffle (220), but is not limited thereto. The driving unit (230) may be connected to one side of the upper baffle (210) to rotate the upper baffle (210), or may be connected to one side of each of the upper baffle (210) and the lower baffle (220) to rotate both the upper baffle (210) and the lower baffle (220).

[0121] FIGS. 12 to 14 illustrate a substrate processing device according to another embodiment of the present invention. In the above-described embodiment, the driving unit (230) rotates the lower baffle (220) to switch the hole pattern of the baffle assembly (200) between the first overlapping degree and the second overlapping degree. However, in the substrate processing device according to another embodiment of FIGS. 12 to 14, the driving unit (230a) horizontally moves at least one of the upper baffle (210) and the lower baffle (220), thereby switching the hole pattern of the baffle assembly (200) between the first overlapping degree and the second overlapping degree.

[0122] In the above-described embodiment, the chamber (100) includes a processing room (110) and a plasma generation room (120), and the baffle assembly (200) is illustrated and described as being installed between the processing space (112) and the plasma generation space (122), but is not limited thereto. The chamber (100) can be applied to various devices that process a substrate (W) with plasma. For example, as illustrated in FIG. 15, the chamber (100) can be provided to include an adapter configuration, which is a space in which plasma flows, between the processing room (110) and the plasma generation room (120).

[0123] It should be understood that exemplary embodiments have been disclosed herein, and that other variations are possible. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but, where applicable, may be interchangeable and used in a selected embodiment, even if not specifically illustrated or described. Such variations should not be considered a departure from the spirit and scope of the present disclosure, and all such modifications apparent to those skilled in the art are intended to be included within the scope of the following claims.

Claims

1. A substrate processing step of supplying first plasma generated in a plasma generation space through a baffle assembly to a processing space and processing a substrate supported on a support unit within the processing space with the first plasma; A substrate processing method comprising a neutralization step in which, after the substrate processing step, the substrate is supported on the support unit, the second plasma generated in the plasma generation space is supplied through the baffle assembly to the processing space to remove residual charges of the substrate.

2. In paragraph 1, A substrate processing method in which the ratio of ions and radicals in the second plasma supplied to the processing space is higher than the ratio of ions and radicals in the first plasma supplied to the processing space.

3. In paragraph 1, The above baffle assembly comprises an upper baffle having a plurality of upper holes formed therein that penetrate in the vertical direction; It includes a lower baffle that is stacked with the upper baffle and has a plurality of lower holes formed therein that penetrate in the vertical direction, In the above substrate processing step, when viewed from above, the upper hole and the lower hole are maintained at the first overlapping degree, In the above neutralization step, when viewed from above, the upper hole and the lower hole are maintained in the second overlapping state, A substrate processing method in which the second overlapping degree has a higher degree of overlap between the upper hole and the lower hole than the first overlapping degree.

4. In paragraph 3, A substrate processing method for switching the degree of overlap between the upper hole and the lower hole between the first degree of overlap and the second degree of overlap by changing the relative position of the upper baffle or the lower baffle.

5. In paragraph 4, A substrate processing method in which the relative position of the upper baffle or the lower baffle is changed by rotating at least one of the upper baffle or the lower baffle.

6. In any one of paragraphs 1 to 5, A substrate processing method, wherein the above substrate processing step is a process of removing a thin film on the substrate using plasma.

7. In paragraph 6, A substrate processing method wherein the above thin film is a hard mask.

8. In any one of paragraphs 1 to 5, The above support unit includes an electrostatic chuck, A loading step of placing the substrate on the support unit before the substrate processing step; Further comprising an unloading step of lifting the substrate from the support unit after the neutralization step; The above loading step is a step of chucking the substrate onto the electrostatic chuck, The above unloading step is a step of dechucking the substrate from the electrostatic chuck. Method of substrate processing.

9. In any one of paragraphs 1 to 5, The above support unit further includes a high frequency power supply for applying high frequency power, In the above substrate processing step, the high-frequency power source generates plasma in the processing space, A substrate processing method in which the high-frequency power is turned off and the neutralization step is performed after the above substrate processing step is completed.

10. In any one of paragraphs 1 to 5, Plasma is generated by supplying a processing gas to the above plasma generation space, A substrate processing method in which the processing gas supplied to the plasma generation space in the substrate processing step and the neutralization step is the same gas.

11. A loading step of placing the substrate on a support unit within the processing space; A substrate processing step of supplying the first plasma generated in the plasma generation space after the loading step through a baffle assembly to the processing space and processing the substrate with the first plasma; After the substrate processing step, a neutralization step in which the second plasma generated in the plasma generation space is supplied to the processing space through the baffle assembly while the substrate is supported on the support unit to remove residual charges of the substrate; Including an unloading step of lifting the substrate from the support unit after the neutralization step, A substrate processing method in which the ratio of ions and radicals in the second plasma supplied to the processing space is higher than the ratio of ions and radicals in the first plasma supplied to the processing space.

12. In paragraph 11, The above support unit further includes a high frequency power supply for applying high frequency power, In the above substrate processing step, the high-frequency power source generates plasma in the processing space, A substrate processing method in which the high-frequency power is turned off and the neutralization step is performed after the above substrate processing step is completed.

13. In paragraph 11, The above baffle assembly comprises an upper baffle having a plurality of upper holes formed therein that penetrate in the vertical direction; It includes a lower baffle that is stacked with the upper baffle and has a plurality of lower holes formed therein that penetrate in the vertical direction, In the above substrate processing step, when viewed from above, the upper hole and the lower hole are maintained at the first overlapping degree, In the above neutralization step, when viewed from above, the upper hole and the lower hole are maintained in the second overlapping state, A substrate processing method in which the second overlapping degree has a higher degree of overlap between the upper hole and the lower hole than the first overlapping degree.

14. In paragraph 13, A substrate processing method for switching the degree of overlap between the upper hole and the lower hole between the first degree of overlap and the second degree of overlap by changing the relative position of the upper baffle or the lower baffle.

15. In paragraph 14, A substrate processing method in which the relative position of the upper baffle or the lower baffle is changed by rotating at least one of the upper baffle or the lower baffle.

16. In a device for processing a substrate, A processing room having a processing space for processing a substrate inside; A support unit for supporting a substrate in the above processing space; A plasma generation room provided outside the above treatment room and having a plasma generation space for generating plasma from treatment gas; A baffle assembly disposed between the above processing space and the above plasma generation space; and Including a controller, The above baffle assembly, An upper baffle having a plurality of upper holes formed therein penetrating in the vertical direction; A lower baffle that is stacked with the upper baffle and has a plurality of lower holes formed therein that penetrate in the vertical direction; A driving unit for changing the relative positions of the upper baffle and the lower baffle; The above controller, A substrate processing step in which the first plasma is supplied to the processing space to process the substrate while the upper hole and the lower hole are maintained in the first overlapping state when viewed from above, After the above substrate processing step, the driving unit is controlled so that a neutralization step is sequentially performed to remove residual charges of the substrate by supplying a second plasma to the processing space while the upper hole and the lower hole are maintained in a second overlapping state. A substrate processing device in which the second overlapping degree has a higher degree of overlap between the upper hole and the lower hole than the first overlapping degree.

17. In paragraph 16, The above drive unit, A substrate processing device that adjusts the hole pattern and hole size of the baffle assembly by rotating at least one of the upper baffle and the lower baffle.

18. In paragraph 16, A substrate processing device further comprising a high-frequency power source for applying high-frequency power to the above support unit.

19. In any one of paragraphs 16 to 18, In the above substrate processing step, A substrate processing device in which the hole size of the above baffle assembly is smaller than the size of the sheath around the hole of the above baffle assembly.

20. In any one of paragraphs 16 to 18, In the above neutralization step, A substrate processing device in which the controller adjusts the hole size of the baffle assembly to be larger than the size of the sheath around the hole of the baffle assembly.

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