Semiconductor process chamber and control method applied to semiconductor process chamber

Abstract

Provided in the present disclosure are a semiconductor process chamber and a control method applied to the semiconductor process chamber. The disclosed semiconductor process chamber comprises a chamber body, a top cover, a gas purification assembly, a first line, and first on-off valves located at two ends of the first line, wherein the top cover is arranged on the chamber body and configured to enclose a process inner cavity with the chamber body. The semiconductor process chamber has a first gas delivery channel that sequentially penetrates the chamber body and the top cover, and the first gas delivery channel is isolated from the process inner cavity; the top cover has a second gas delivery channel in communication with the process inner cavity; the gas purification assembly comprises a second line, a second on-off valve arranged on the second line, and a purifier arranged on the second line and located downstream of the second on-off valve; and the first line and the second line are arranged in parallel, and are both connected between the first gas delivery channel and the second gas delivery channel at the position of the top cover. The solution can solve the problem of process chambers in the related art being susceptible to particulate contamination.

Description

Semiconductor process chamber and control method applied to semiconductor process chamber TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, in particular to a semiconductor process chamber and a control method applied to the semiconductor process chamber. BACKGROUND

[0002] In the technical field of silicon epitaxial growth, in order to ensure the quality of the epitaxial process, the wafer needs to be cleaned by a pre-cleaning process to remove the silicon oxide on the surface in the process chamber. The process gas required for the pre-cleaning process of the wafer is usually corrosive when it encounters water or other impurities. For example, the process gas can include hydrogen fluoride gas, which is corrosive when it encounters water.

[0003] The top cover of the process chamber is provided with a gas outlet channel for delivering process gas into the process chamber. Due to the relatively complex structure of the gas outlet channel, the top cover cannot be plated with nickel and can only be made of bare aluminum or other materials. However, when cleaning the process chamber or regularly replacing the chamber materials, it is inevitable to disconnect the process gas delivery path, which destroys the vacuum state of the process gas delivery path, and water, carbon dioxide and other impurities enter the process gas delivery path. When the process gas enters the process gas delivery path, the corrosive substances formed by the process gas encountering water, carbon dioxide and other impurities will reach the gas outlet channel. Since the top cover is made of bare aluminum or other materials that are easily corroded, the corrosive substances can easily corrode the inner wall of the gas outlet channel and generate a large number of particles, which in turn pollute the chamber environment of the process chamber. SUMMARY

[0004] The present application discloses a semiconductor process chamber and a control method applied to the semiconductor process chamber to solve the problem that the process chamber in the related art is polluted by particles.

[0005] To solve the above technical problems, the present application is implemented as follows:

[0006] In a first aspect, the present application discloses a semiconductor process chamber, which comprises a chamber body, a top cover, a gas purification assembly, a first pipeline, and first switch valves located at both ends of the first pipeline. The top cover is arranged on the chamber body and used to form a process inner cavity with the chamber body. The semiconductor process chamber has a first gas delivery channel that penetrates the chamber body and the top cover in sequence, and the first gas delivery channel is isolated from the process inner cavity. The top cover has a second gas delivery channel that communicates with the process inner cavity.

[0007] The gas purification assembly comprises a second pipeline, a second switch valve arranged in the second pipeline, and a purifier arranged in the second pipeline and downstream of the second switch valve, the first pipeline and the second pipeline are arranged in parallel and are both communicated between the first gas conveying channel and the second gas conveying channel at the position of the top cover, the first gas conveying channel is used for providing gas to the process inner cavity through the first pipeline or the second pipeline.

[0008] In a second aspect, the application also discloses a control method applied to a semiconductor process chamber, the semiconductor process chamber being the semiconductor process chamber of the first aspect, and the disclosed control method comprises the following steps:

[0009] Before the top cover is opened, the first switch valve and the second switch valve are both controlled to be closed;

[0010] After the top cover is closed, the second switch valve is controlled to be opened, and gas is conveyed into the first gas conveying channel, so that the gas enters the second pipeline through the first gas conveying channel and enters the second gas conveying channel through the purifier.

[0011] The technical scheme adopted by the application can achieve the following technical effects:

[0012] After the task of cleaning the process inner cavity or regularly replacing the chamber materials and the like is completed and the top cover is closed, the purge gas for purging the gas path enters the second pipeline through the first gas conveying channel and enters the second gas conveying channel after removing the moisture, carbon dioxide and other impurities in the gas path through the purifier, so that the moisture, carbon dioxide and impurities in the first gas conveying channel can be better removed under the action of the purifier, thereby reducing the moisture, carbon dioxide and impurities entering the second gas conveying channel, and because the first pipeline has the first switch valve arranged at both ends, when the top cover 200 is opened, the first switch valves at both ends of the first pipeline are in the closed state, so the moisture, carbon dioxide and impurities in the air cannot enter the first pipeline, thereby when the first switch valve is opened and the second switch valve is closed to convey the process gas for processing the wafer into the process inner cavity, the reaction between the process gas and the moisture, carbon dioxide and impurities can be avoided or reduced, so as to avoid or alleviate the corrosion of the first gas conveying channel, the second gas conveying channel and the first pipeline, thereby avoiding or alleviating the particles generated due to corrosion from entering the process inner cavity and polluting the process inner cavity. Moreover, the moisture, carbon dioxide and impurities in the first gas conveying channel and the second gas conveying channel are removed through the purifier, so compared with not arranging the purifier, the purging efficiency of the first gas conveying channel and the second gas conveying channel can be improved, and the purging time can be reduced. BRIEF DESCRIPTION OF DRAWINGS

[0013] Fig. 1 is a structural schematic view of a semiconductor process chamber disclosed by an embodiment of the application.

[0014] Fig. 2 is a structural schematic diagram of a top cover disclosed by embodiments of the present application, wherein the solid line and the dashed line in the diagram represent entering different gases when processing a wafer, for example, the solid line can represent hydrogen fluoride gas, and the dashed line can represent ammonia gas;

[0015] Fig. 3 is a flow chart of a control method applied to a semiconductor process chamber disclosed by embodiments of the present application;

[0016] Fig. 4 is a flow chart of another control method applied to a semiconductor process chamber disclosed by embodiments of the present application.

[0017] Legend: 100-chamber body, 101-process inner cavity, 102-first gas channel, 103-second gas channel, 200-top cover, 210-hinge, 310-first pipeline, 320-first switch valve, 410-second pipeline, 420-purifier, 430-second switch valve, 440-pressure reducing valve, 450-pressure sensor, 460-flow controller, 470-filter, 480-third switch valve, 500-sealing element, 600-base, 710-third pipeline, 720-fourth pipeline, 730-third switch valve. DETAILED DESCRIPTION

[0018] To make the objectives, technical solutions and advantages of the present application clearer, the technical solutions of the present application will be described clearly and completely below with specific embodiments of the present application and corresponding drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0019] The technical solutions disclosed by various embodiments of the present application will be described in detail below with reference to the drawings.

[0020] Please refer to Figs. 1 to 2, the present application discloses a semiconductor process chamber, the disclosed semiconductor process chamber includes a chamber body 100, a top cover 200, a gas purifying assembly, a first pipeline 310 and first switch valves 320 located at both ends of the first pipeline 310.

[0021] The top cover 200 is arranged on the chamber body 100 and is used to enclose the process inner cavity 101 with the chamber body 100. The semiconductor process chamber has a first gas channel 102 penetrating through the chamber body 100 and the top cover 200 in sequence, and the first gas channel 102 is isolated from the process inner cavity 101. The top cover 200 has a second gas channel 103 communicating with the process inner cavity 101.

[0022] It should be noted that when the process inner cavity 101 needs to be cleaned or the chamber material needs to be regularly replaced, the top cover 200 needs to be opened to clean the process inner cavity 101 or regularly replace the chamber material. However, when the top cover 200 is opened, the first gas supply channel 102 passing through the chamber body 100 and the top cover 200 will be disconnected at the connection between the top cover 200 and the chamber body 100, and the first gas supply channel 102 is in a broken vacuum state (i.e., in communication with the atmosphere), and moisture, carbon dioxide and impurities in the air will enter the first gas supply channel 102.

[0023] In the present application, the gas purification assembly includes a second pipeline 410, a second switch valve 430 arranged in the second pipeline 410, and a purifier 420 arranged in the second pipeline 410 and downstream of the second switch valve 430. It should be noted that downstream and upstream appearing hereinafter refer to upstream and downstream in the direction of the gas flow path. In the present application, the direction of the gas flow path is the direction from the first gas supply channel 102 into the process inner cavity 101. The purifier 420 is downstream of the second switch valve 430, i.e., in the gas flow path, the gas passes through the second switch valve 430 first and then reaches the purifier 420.

[0024] The first pipeline 310 and the second pipeline 410 are arranged in parallel and are in communication between the first gas supply channel 102 and the second gas supply channel 103 at the position of the top cover 200.

[0025] It should be noted that the first switch valve 320 can control the on-off of the gas supply of the first pipeline 310, the second switch valve 430 can control the on-off of the gas supply of the second pipeline 410, and the purifier 420 can be used to remove moisture, carbon dioxide and other impurities in the gas path, and the purifier 420 can be a adsorption purifier, a getter purifier, a palladium membrane purifier, a catalyst purifier, etc. The present application does not make specific limitations on the type of purifier 420.

[0026] The first gas supply channel 102 is used to supply gas to the process inner cavity 101 through the first pipeline 310 or the second pipeline 410.

[0027] Specifically, before the top cover 200 is opened to make the process inner cavity 101 in a broken vacuum state, the first switch valve 320 and the second switch valve 430 are both in a closed state. After the process inner cavity 101 is cleaned or the chamber material is periodically replaced and the top cover 200 is closed, it is necessary to introduce a purge gas to purge the gas path, at this time, the second switch valve 430 is opened, the first switch valve 320 remains in a closed state, and the gas is transported into the first gas transport channel 102, at this time, the transported gas is a purge gas, so that the purge gas enters the second pipeline 410 through the first gas transport channel 102, and then enters the process inner cavity 101 through the purifier 420 and the second gas transport channel 103, so as to purge the first gas transport channel 102 and the second gas transport channel 103. When the gas path is purged and the wafer is processed, it is necessary to introduce a process gas, at this time, the second switch valve 430 is closed, the first switch valve 320 is opened, and the gas is transported into the first gas transport channel 102, at this time, the transported gas is a process gas, so that the process gas enters the process inner cavity 101 through the first gas transport channel 102, the first pipeline 310 and the second gas transport channel 103 in sequence, so as to process the wafer.

[0028] In a specific embodiment, in the process of epitaxial growth of silicon on a wafer, in order to ensure the quality of the epitaxial growth process, the wafer needs to be subjected to a pre-cleaning process to remove the silicon oxide on the surface. The commonly used pre-cleaning process is to react HF, NH3 and SiO2, but is not limited to reacting HF, NH3 and SiO2. The exothermic reaction of HF, NH3 and SiO2 is as follows: HF + NH3 + SiO2→ (NH4)2SiF6 + H2O

[0029] After the reaction occurs, the product is sublimated by annealing, and finally discharged from the exhaust port of the chamber body 100. The reaction of sublimating the product by annealing is as follows:

[0030] The reaction requires that NH3 and HF cannot be mixed in advance, otherwise a large number of fixed particles will be generated. Therefore, the top cover 200 design usually needs to ensure that the NH3 gas and the HF gas are isolated before entering the process cavity. For example, FIG. 2 shows a top cover 200 structure in a double-layer arrangement, wherein the second gas channel 103 (equivalent to the gas outlet channel in the background art) includes an NH3 gas channel and an HF gas channel. Of course, the top cover 200 structure is not limited to the structure shown in FIG. 2, and can also be other structures. Since the top cover 200 design usually needs to ensure that the NH3 gas and the HF gas are isolated before entering the process cavity, the structure of the top cover 200 is relatively complex, and the top cover 200 cannot be plated with nickel and needs to be made of bare aluminum or other materials. Taking the pre-cleaning process through the reaction of HF, NH3 and SiO2 as an example, but not limited to the pre-cleaning process using the reaction of HF, NH3 and SiO2. If moisture, carbon dioxide and other impurities enter the HF gas channel of the top cover 200, when the HF gas channel is supplied with HF gas, the HF gas will corrode the HF gas channel after encountering water, and then particles will easily enter the process cavity 101 and contaminate the process cavity 101.

[0031] To avoid or reduce the moisture, carbon dioxide and impurities from entering the second gas channel 103, the semiconductor process chamber disclosed in the embodiments of the present application is provided with the first pipeline 310, the first switch valve 320, the second pipeline 410, the purifier 420 and the second switch valve 430, so that the first pipeline 310 and the second pipeline 410 are arranged in parallel and are both communicated between the first gas channel 102 and the second gas channel 103 at the position of the top cover 200, the first switch valve 320 is arranged at both ends of the first pipeline 310, the second switch valve 430 and the purifier 420 are arranged in the second pipeline 410, and the second switch valve 430 is located upstream of the purifier 420, so that before the task of cleaning or regularly replacing the chamber material of the process inner cavity 101 is needed, the first switch valve 320 and the second switch valve 430 are closed first, and then the top cover 200 is opened to clean or regularly replace the chamber material of the process inner cavity 101. After the top cover 200 is opened, the process inner cavity 101 will be converted from a vacuum state to an atmospheric state, the first gas channel 102 penetrating through the chamber body 100 and the top cover 200 will be disconnected at the connection between the top cover 200 and the chamber body 100, and the moisture, carbon dioxide and impurities in the air will enter the first gas channel 102. Since the first switch valve 320 is arranged at both ends of the first pipeline 310, the moisture, carbon dioxide and impurities in the air will not enter the first pipeline 310. After the cleaning or regular replacement of the chamber material of the process inner cavity 101 is completed, the top cover 200 is closed and the first gas channel 102 and the second gas channel 103 are purged, the purge gas enters the second pipeline 410 through the first gas channel 102, and then passes through the purifier 420 to remove the moisture, carbon dioxide and other impurities in the gas circuit, and then enters the process inner cavity 101 through the second gas channel 103, and is discharged from the exhaust port of the chamber body 100.

[0032] After the task of cleaning the process cavity 101 or replacing the chamber material and the like is completed and the top cover 200 is closed, the purge gas for purging the gas path can enter the second pipeline 410 through the first gas conveying passage 102, and then enter the second gas conveying passage 103 after removing the moisture, carbon dioxide and other impurities in the gas path through the purifier 420, so that the moisture, carbon dioxide and impurities in the first gas conveying passage 102 can be better removed under the action of the purifier 420, thereby reducing the moisture, carbon dioxide and impurities entering the second gas conveying passage 103, and because the first pipeline 310 has the first switch valve 320 at both ends, when the top cover 200 is opened, the first switch valves 320 at both ends of the first pipeline 310 are in a closed state, and the moisture, carbon dioxide and impurities in the air cannot enter the first pipeline 310, thereby avoiding or reducing the reaction of the process gas with the moisture, carbon dioxide and impurities when the first switch valve 320 is opened and the second switch valve 430 is closed to introduce the process gas for processing the wafer into the process cavity 101, so as to avoid or alleviate the corrosion of the first gas conveying passage 102, the second gas conveying passage 103 and the first pipeline 310, thereby avoiding or alleviating the pollution of the process cavity 101 caused by the particles generated by the corrosion entering the process cavity 101. Moreover, the moisture, carbon dioxide and impurities in the first gas conveying passage 102 and the second gas conveying passage 103 are removed by the purifier 420, which can improve the purging efficiency of the first gas conveying passage 102 and the second gas conveying passage 103 and reduce the purging time compared with not setting the purifier 420.

[0033] Specifically, the top cover 200 can be rotatably arranged on the chamber body 100, for example, the top cover 200 can be arranged on the chamber body 100 through a hinge 210, and the top cover 200 can be rotated relative to the chamber body 100 to switch between the open state and the closed state. Of course, the top cover 200 can also be connected to the chamber body 100 by buckling, screws or the like, and the present application does not limit the arrangement of the top cover 200. It should be noted that the closed state of the top cover 200 refers to the state that the top cover 200 and the chamber body 100 enclose the closed process cavity 101, and the open state of the top cover 200 refers to the state that the process cavity 101 is in communication with the atmosphere at the position of the top cover 200. The first gas conveying passage 102 can be provided with a sealing member 500 at the connection between the top cover 200 and the chamber body 100, and the sealing member 500 can be sealed between the top cover 200 and the chamber body 100 when the top cover 200 is in the closed state.

[0034] Because the purifier 420 has a certain pressure range, in order to protect the purifier 420, in some embodiments, the gas purifying assembly can further include a pressure reducing valve 440 and a pressure sensor 450, both of which can be arranged in the second pipeline 410 and upstream of the purifier 420.

[0035] The semiconductor process chamber disclosed by the embodiments of the present application sets the pressure reducing valve 440 and the pressure sensor 450, so that the opening of the pressure reducing valve 440 can be adjusted according to the actual pressure of the gas in the second pipeline 410 detected by the pressure sensor 450, thereby avoiding the damage of the purifier 420 caused by the excessive pressure of the gas flowing through the purifier 420.

[0036] Further, the semiconductor process chamber can further include a controller, which can be used to control the opening of the pressure reducing valve 440 according to the actual pressure of the gas in the second pipeline 410 detected by the pressure sensor 450, so that the pressure of the gas flowing through the purifier 420 is within the preset pressure range. Since the opening of the pressure reducing valve 440 is automatically controlled by the controller according to the actual pressure of the gas in the second pipeline 410 detected by the pressure sensor 450, the adjustment of the opening of the pressure reducing valve 440 is more intelligent.

[0037] It should be noted that the pressure adjustment range of the pressure reducing valve 440 covers the pressure use range of the purifier 420.

[0038] Since the purifier 420 has a certain flow use range, in order to protect the purifier 420, in some embodiments, the gas purification assembly can further include a flow controller 460, which can be arranged in the second pipeline 410 and located upstream of the purifier 420. The flow controller 460 can be used to control the flow of the gas flowing through the purifier 420, thereby avoiding the damage of the purifier 420 caused by the excessive flow of the gas flowing through the purifier 420, and also preventing the problem of the excessive flow of the gas flowing through the purifier 420 at the beginning stage causing the temperature of the purifier 420 to rise too fast and damage the purifier 420.

[0039] It should be noted that the flow adjustment range of the flow controller 460 covers the maximum flow use value of the purifier 420.

[0040] Further, the gas purification assembly can further include a temperature detection device, which can be used to detect the actual temperature of the purifier 420, and the controller can be used to control the opening of the flow controller 460 according to the actual temperature detected by the temperature detection device.

[0041] The application embodiment discloses an application scenario that a controller controls the opening degree of a flow controller 460 according to an actual temperature detected by a temperature detection device: before a top cover 200 is closed to purge a first gas conveying passage 102 and a second gas conveying passage 103, the controller can control the flow controller 460 to be closed; after a second switch valve 430 is opened, the controller can control the opening degree of the flow controller 460 to increase by a first opening degree value, and wait for a first preset time length; if the actual temperature is less than a preset temperature threshold value within the first preset time length after the first opening degree value is increased, the opening degree of the flow controller 460 is increased by the first opening degree value again, and the subsequent steps of waiting for the first preset time length are executed again until the flow controller 460 is increased to a first preset opening degree threshold value. If the actual temperature is greater than or equal to the preset temperature threshold value within the first preset time length after the first opening degree value is increased, the controller can control the flow controller 460 to decrease by a second opening degree value; if the actual temperature is less than the preset temperature threshold value within a second preset time length after the second opening degree value is decreased, the subsequent steps of waiting for the first preset time length are executed again. If the actual temperature is greater than or equal to the preset temperature threshold value within the second preset time length after the second opening degree value is decreased, the subsequent steps of controlling the flow controller 460 to decrease by the second opening degree value are executed again until the actual temperature is less than the preset temperature threshold value within the second preset time length after the second opening degree value is decreased.

[0042] Of course, the application scenario that the controller controls the opening degree of the flow controller 460 according to the actual temperature detected by the temperature detection device can also be other scenarios, for example, before the top cover 200 is closed to purge the first gas conveying passage 102 and the second gas conveying passage 103, the controller can control the flow controller 460 to be closed; after the second switch valve 430 is opened, the controller can control the opening degree of the flow controller 460 to continue and gradually increase; if the actual temperature is greater than or equal to a preset temperature threshold value in the process of gradually increasing, the opening degree of the flow controller 460 is stopped from increasing; after the actual temperature is less than the preset temperature threshold value, a third preset time length is waited for, and then the controller controls the opening degree of the flow controller 460 to gradually increase until the opening degree of the flow controller 460 is increased to a first preset opening degree threshold value.

[0043] Of course, the application scenario that the controller controls the opening degree of the flow controller 460 according to the actual temperature detected by the temperature detection device can also be other scenarios, and the application embodiment will not be specifically introduced.

[0044] The semiconductor process chamber disclosed by the application embodiment is provided with a temperature detection device, so that the temperature detection device can detect the actual temperature of the purifier 420, thereby the controller can control the opening degree of the flow controller 460 according to the actual temperature detected by the temperature detection device, and then the problem that the purifier 420 is damaged due to that the temperature of the purifier 420 is too high because the flow of the gas flowing through the purifier 420 is too large can be avoided.

[0045] The second preset time length can be equal to the first preset time length, for example, the second preset time length and the first preset time length can both be 3 min. Of course, the second preset time length can also be unequal to the first preset time length, and the second preset time length and the first preset time length can be set according to specific conditions.

[0046] To further avoid particles from entering the process inner cavity 101, in some embodiments, the gas purification assembly can further include a filter 470, which can be arranged on the second pipeline 410 and located upstream of the purifier 420. The filter 470 can be used to filter particles in the gas flowing through the second pipeline 410, so that more particles can be avoided from reaching the purifier 420 to cause the problem of shorter maintenance period of the purifier 420. Specifically, the filtering accuracy of the filter 470 can be ≥0.003 um, of course, the filtering accuracy of the filter 470 can also be other ranges, for example, ≥0.004 um, etc., and the filtering accuracy of the filter 470 is not limited in the present application.

[0047] When the introduced gas is a process gas, in order to avoid the process gas from polluting the gas purification assembly, in some embodiments, the gas purification assembly can further include a third switch valve 480 arranged on the second pipeline 410, and the third switch valve 480 is located downstream of the purifier 420, so that in the case of processing the wafer located in the process inner cavity 101, the second switch valve 430 and the third switch valve 480 are both closed, so that the process gas can be avoided from polluting the purifier 420. Specifically, the second switch valve 430 and the third switch valve 480 can be respectively located at both ends of the second pipeline 410, so that the process gas can be avoided from polluting other components located between the second switch valve 430 and the third switch valve 480.

[0048] In some embodiments, the semiconductor process chamber can further include a susceptor 600, which can be opposite to the gas outlet of the second gas supply passage 103, and the susceptor 600 is used to carry the wafer.

[0049] In some embodiments, the semiconductor process chamber can further include a third pipeline 710, a fourth pipeline 720, and a third switch valve 730. The third pipeline 710 and the fourth pipeline 720 can be arranged in parallel and can both communicate with the gas inlet of the first gas supply passage 102 located on the chamber body 100. The third pipeline 710 and the fourth pipeline 720 can both be provided with the third switch valve 730. The third pipeline 710 can be used to transport the process gas, and the fourth pipeline 720 can be used to transport the purge gas.

[0050] Referring to FIG. 3, the application further discloses a control method applied to a semiconductor process chamber, the disclosed semiconductor process chamber is the semiconductor process chamber disclosed in the above-mentioned embodiments, and the disclosed control method comprises the following steps:

[0051] S101, before opening the top cover 200, control the first switch valve 320 and the second switch valve 430 to be closed.

[0052] It should be noted that controlling the first switch valve 320 and the second switch valve 430 to be closed means closing the gas passages of the first pipeline 310 and the second pipeline 410.

[0053] S102, after closing the top cover 200, control the second switch valve 430 to be opened, and deliver the gas into the first gas delivery channel 102, so that the gas enters the second pipeline 410 through the first gas delivery channel 102, and enters the process inner cavity 101 through the second gas delivery channel 103 after passing through the purifier 420.

[0054] Specifically, the purifier 420 can remove water, carbon dioxide and other impurities in the gas circuit.

[0055] It should be noted that the steps of the control method applied to the semiconductor process chamber disclosed in the embodiments of the application have the same or similar effects as the functions of the components of the semiconductor process equipment disclosed in the above-mentioned embodiments, and can be mutually referred to, which will not be described here.

[0056] The control method applied to the semiconductor process equipment disclosed in the embodiments of the present application can be used to better remove the moisture, carbon dioxide and impurities in the first gas conveying channel 102 and the second gas conveying channel 103 under the action of the purifier 420 after the process chamber 101 is cleaned or the chamber material is regularly replaced and the top cover 200 is closed, so as to reduce the moisture, carbon dioxide and impurities entering the second gas conveying channel. In addition, since the first pipeline 310 has the first switch valve 320 at both ends, when the top cover 200 is opened, the first switch valves at both ends of the first pipeline are in the closed state, so the moisture, carbon dioxide and impurities in the air cannot enter the first pipeline 310. Therefore, when the first switch valve 320 is opened and the second switch valve 430 is closed to introduce the process gas for processing the wafer into the process chamber 101, the reaction between the process gas and the moisture, carbon dioxide and impurities can be avoided or reduced, so as to avoid or alleviate the corrosion of the first gas conveying channel 102, the second gas conveying channel 103 and the first pipeline 310, thereby avoiding or alleviating the pollution of the process chamber 101 caused by the particles generated by the corrosion entering the process chamber 101. In addition, the moisture, carbon dioxide and impurities in the first gas conveying channel 102 and the second gas conveying channel 103 are removed by the purifier 420, so the purifier 420 can improve the purging efficiency of the first gas conveying channel 102 and the second gas conveying channel 103 and reduce the purging time compared with the case where the purifier 420 is not arranged.

[0057] In some embodiments, the gas purifying assembly can further include a flow controller 460, which can be arranged in the second pipeline 410 and located upstream of the purifier 420.

[0058] Before the second switch valve 430 is controlled to be opened, the disclosed control method can further include:

[0059] Step A1, the flow controller 460 is closed.

[0060] After the second switch valve 430 is controlled to be opened, the disclosed control method can further include:

[0061] Step A2, the opening degree of the flow controller 460 is gradually increased to a first preset opening degree threshold.

[0062] The control method disclosed in the embodiments of the present application closes the flow controller 460 before opening the second switch valve 430, and gradually increases the opening degree of the flow controller 460 to the first preset opening degree threshold after the second switch valve 430 is opened, so that the problem of the temperature of the purifier 420 rising too fast and causing damage to the purifier 420 due to the excessive flow through the purifier 420 at the beginning stage can be avoided.

[0063] In some embodiments, the gas purification assembly can further include a temperature detection device, which can be used to detect the actual temperature of the purifier 420.

[0064] In the disclosed control method, gradually increasing the opening degree of the flow controller 460 to the first preset opening degree threshold can include:

[0065] Step B1, increasing the opening degree of the flow controller 460 by a first opening degree value.

[0066] It should be noted that the first preset opening degree threshold can be the maximum opening degree value of the flow controller 460. Of course, the maximum opening degree value of the flow controller 460 can also be greater than the first preset opening degree threshold, and at this time, the first preset opening degree threshold can be the opening degree value required by the semiconductor process chamber during purging. The first preset opening degree threshold in the embodiments of the present application has different choices in different application scenarios. The first opening degree value is less than the first preset opening degree threshold, and the first opening degree value is the gradient of the opening degree of the flow controller 460 each time. For example, the first preset opening degree threshold can be 1, and the first opening degree value can be 0.05. The first preset opening degree threshold and the first opening degree value here are only illustrative and are not limited to the first preset opening degree threshold being 1 and the first opening degree value being 0.05.

[0067] Step B2, determining whether the actual temperature is less than the preset temperature threshold within a first preset time period after the first opening degree value is increased.

[0068] It should be noted that the first preset time period can be set according to actual needs, for example, it can be 3 minutes, 5 minutes, etc., and the embodiments of the present application do not limit the first preset time period.

[0069] Step B3, when the actual temperature is less than the preset temperature threshold within the first preset time period after the first opening degree value is increased, returning to execute the step of increasing the opening degree of the flow controller 460 by the first opening degree value until the opening degree of the flow controller 460 is increased to the first preset opening degree threshold.

[0070] The control method disclosed by the embodiments of the present application can increase the opening of the flow controller 460 by the first opening value each time, wait for a first preset time period after each time the opening of the flow controller 460 is increased by the first opening value, and return to perform the step of increasing the opening of the flow controller 460 by the first opening value next time when the actual temperature is less than the preset temperature threshold within the first preset time period after the opening of the flow controller 460 is increased by the first opening value, until the opening of the flow controller 460 is increased to the first preset opening threshold, so that the continuous increase of the opening of the flow controller 460 can be avoided to cause the temperature of the purifier 420 to rise too fast.

[0071] Further, the disclosed control method can further include:

[0072] Step C1, when the actual temperature is greater than or equal to the preset temperature threshold within the first preset time period after the opening of the flow controller 460 is increased by the first opening value, the flow controller 460 is controlled to decrease by the second opening value.

[0073] It should be noted that the second opening value can be less than the first opening value, and the second opening value is the gradient of the opening of the flow controller 460 each time. For example, the first preset opening threshold can be 1, and the second opening value can be 0.01. Here, the first preset opening threshold and the second opening value are only illustrative and are not limited to the first preset opening threshold being 1 and the second opening value being 0.01.

[0074] Step C2, determining whether the actual temperature is less than the preset temperature threshold within a second preset time period after the opening of the flow controller 460 is decreased by the second opening value.

[0075] Step C3, when the actual temperature is less than the preset temperature threshold within the second preset time period after the opening of the flow controller 460 is decreased by the second opening value, the step of increasing the opening of the flow controller 460 by the first opening value is performed.

[0076] Step C4, when the actual temperature is greater than or equal to the preset temperature threshold within the second preset time period after the opening of the flow controller 460 is decreased by the second opening value, the step of decreasing the opening of the flow controller 460 by the second opening value is returned to be performed until the actual temperature is less than the preset temperature threshold within the second preset time period after the opening of the flow controller 460 is decreased by the second opening value.

[0077] The control method disclosed by the embodiments of the present application can control the flow controller 460 to reduce the second opening value when the actual temperature is greater than or equal to the preset temperature threshold within the first preset time period after the first opening value is increased, and return to execute the step of controlling the flow controller 460 to increase the first opening value when the actual temperature is less than the preset temperature threshold within the second preset time period after the second opening value is reduced, and return to execute the step of controlling the flow controller 460 to reduce the second opening value when the actual temperature is greater than or equal to the preset temperature threshold, until the actual temperature is less than the preset temperature threshold within the second preset time period after the second opening value is reduced, so that when the actual temperature of the purifier 420 is greater than the preset temperature threshold, the actual temperature of the purifier 420 can be reduced by reducing the opening of the flow controller 460, and damage to the purifier 420 caused by a high temperature of the purifier 420 can be avoided.

[0078] In some embodiments, the gas purification assembly can further include a pressure reducing valve 440 and a pressure sensor 450, both of which can be arranged in the second pipeline 410 and located upstream of the purifier 420.

[0079] Before the second switch valve 430 is controlled to be opened, the disclosed control method can further include:

[0080] Step D1, controlling the opening of the pressure reducing valve 440 to be at a minimum value.

[0081] After the second switch valve 430 is controlled to be opened, the control method can further include:

[0082] Step D2, according to the actual pressure of the gas in the second pipeline 410 detected by the pressure sensor 450, controlling the opening of the pressure reducing valve 440 to make the pressure of the gas flowing through the purifier 420 within a preset pressure range.

[0083] The control method disclosed by the embodiments of the present application controls the opening of the pressure reducing valve 440 to be at a minimum value before the second switch valve 430 is controlled to be opened, and controls the opening of the pressure reducing valve 440 according to the actual pressure of the gas in the second pipeline 410 detected by the pressure sensor 450 after the second switch valve 430 is controlled to be opened, so that the pressure of the gas flowing through the purifier 420 can be prevented from being too high to damage the purifier 420.

[0084] In some embodiments, after gradually increasing the opening degree of the flow controller 460 to the first preset opening degree threshold, the gas is continuously purged for a fourth preset time length. After the gas is continuously purged for the fourth preset time length, the second switch valve 430 is closed, and the opening degree of the pressure reducing valve 440 and the opening degree of the flow controller 460 are both adjusted to the minimum value. The fourth preset time length can be 5h, and of course, the fourth preset time length can also be other numerical values, and the embodiments of the present application do not limit the fourth preset time length.

[0085] It should be noted that in the present application, when the third switch valve 480 is arranged on the second pipeline 410, the opening and closing of the third switch valve 480 can refer to the opening and closing of the second switch valve 430, that is, when the second switch valve 430 is opened, the third switch valve 480 is also opened, and when the second switch valve 430 is closed, the third switch valve 480 is also closed. Please refer to FIG. 4, in a specific embodiment, the control method disclosed in the present application comprises:

[0086] S101, before opening the top cover 200, the first switch valve 320 and the second switch valve 430 are both closed.

[0087] S201, after opening the top cover 200 and completing the corresponding task, the top cover 200 is closed.

[0088] Specifically, the corresponding task can be a task of cleaning the process inner cavity 101 or regularly replacing the chamber material, etc.

[0089] S202, the flow controller 460 is closed, and the opening degree of the pressure reducing valve 440 is controlled to be at the minimum value.

[0090] S203, a first preset opening degree threshold is set.

[0091] It should be noted that S203 can be pre-set and stored, and can be directly called when used.

[0092] S204, the second switch valve 430 is opened, and the gas is delivered into the first gas delivery channel 102.

[0093] It should be noted that the gas at this time can be purge gas.

[0094] S205, according to the actual pressure of the gas in the second pipeline 410 detected by the pressure sensor 450, the opening degree of the pressure reducing valve 440 is controlled to make the pressure of the gas flowing through the purifier 420 within a preset pressure range.

[0095] S206, whether the opening degree of the flow controller 460 is greater than the first preset opening degree threshold is judged.

[0096] S207, when the opening degree of the flow controller 460 is less than or equal to the first preset opening degree threshold, the opening degree of the flow controller 460 is controlled to increase by the first opening degree value.

[0097] S208, after the opening degree of the flow controller 460 is controlled to increase by the first opening degree value, it is judged whether the actual temperature is less than the preset temperature threshold within the first preset time length. If the actual temperature is less than the preset temperature threshold within the first preset time length after the first opening degree value is increased, the step of S206 is executed until the opening degree of the flow controller 460 is greater than the first preset opening degree threshold, and then the step S2011 is executed.

[0098] S209, when the actual temperature is greater than or equal to the preset temperature threshold within the first preset time length after the first opening degree value is increased, the flow controller 460 is controlled to decrease by the second opening degree value.

[0099] S2010, after the opening degree of the flow controller 460 is controlled to decrease by the second opening degree value, it is judged whether the actual temperature is less than the preset temperature threshold within the second preset time length. If the actual temperature is less than the preset temperature threshold within the second preset time length, the step of S206 is executed. If the actual temperature is greater than or equal to the preset temperature threshold within the second preset time length, the step of S209 is executed until the actual temperature is less than the preset temperature threshold within the second preset time length after the second opening degree value is decreased.

[0100] S2011, after the opening degree of the flow controller 460 is greater than the first preset opening degree threshold, the purge gas is controlled to continue to purge for the fourth preset time length.

[0101] S2012, after the purge gas is controlled to continue to purge for the fourth preset time length, the second switch valve 430 is closed, and the opening degree of the pressure reducing valve 440 and the opening degree of the flow controller 460 are adjusted to the minimum value.

[0102] The control method applied to the semiconductor process equipment disclosed in the embodiments of the present application can better remove the moisture, carbon dioxide and impurities in the first gas conveying channel 102 and the second gas conveying channel 103 under the action of the purifier 420 after the purge gas for purging the gas path enters the second pipeline 410 through the first gas conveying channel 102 and enters the second gas conveying channel 103 after removing the moisture, carbon dioxide and other impurities in the gas path through the purifier 420 after the task of cleaning or regularly replacing the chamber material in the process cavity 101 is completed and the top cover 200 is closed, so that the moisture, carbon dioxide and impurities in the first gas conveying channel 102 and the second gas conveying channel 103 can be better removed under the action of the purifier 420, and then the moisture, carbon dioxide and impurities entering the second gas conveying channel can be reduced, and because the first pipeline 310 has the first switch valve 320 at both ends, when the top cover 200 is opened, the first switch valves at both ends of the first pipeline are in a closed state, and the moisture, carbon dioxide and impurities in the air cannot enter the first pipeline 310, and then when the first switch valve 320 is opened and the second switch valve 430 is closed to introduce the process gas for processing the wafer into the process cavity 101, the reaction of the process gas with the moisture, carbon dioxide and impurities can be avoided or reduced to avoid or alleviate the corrosion of the first gas conveying channel 102, the second gas conveying channel 103 and the first pipeline 310, so that the particles generated due to the corrosion can be avoided or alleviated to pollute the process cavity 101. Moreover, the moisture, carbon dioxide and impurities in the first gas conveying channel 102 and the second gas conveying channel 103 are removed by the purifier 420, which can improve the purging efficiency of the first gas conveying channel 102 and the second gas conveying channel 103 and reduce the purging time compared with not setting the purifier 420.

[0103] It should be noted that in the embodiments of the present application, the first preset opening threshold, the first opening value, the second opening value, the preset temperature threshold, the first preset time length, the second preset time length, the third preset time length, the fourth preset time length and the like can be set according to actual application requirements, and the embodiments of the present application do not make specific limitations thereon. The purge gas can be nitrogen, and of course, the purge gas can also be other inert gases, and the embodiments of the present application do not make specific limitations on the type of the purge gas.

[0104] In the above embodiments of the present application, the differences between the various embodiments are mainly described, and the optimization features different between the various embodiments can be combined to form a more optimal embodiment as long as they are not contradictory. Considering the brevity of the writing, it will not be repeated here.

[0105] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the above specific embodiments, and the above specific embodiments are only illustrative but not restrictive, and those skilled in the art can make many forms under the inspiration of the present application without departing from the scope of the present application and the scope protected by the claims.

Claims

1. A semiconductor process chamber, characterized in that: The system comprises a chamber body, a top cover, a gas purification component, a first pipeline, and first switch valves located at both ends of the first pipeline, wherein: The top cover is provided on the chamber body and is used to enclose a process cavity with the chamber body. The semiconductor process chamber has a first gas delivery channel sequentially passing through the chamber body and the top cover, and the first gas delivery channel is isolated from the process cavity. The top cover has a second gas delivery channel communicating with the process cavity. The gas purification component includes a second pipeline, a second switch valve provided on the second pipeline, and a purifier provided on the second pipeline and located downstream of the second switch valve; The first pipeline and the second pipeline are arranged in parallel, and are both connected between the first gas transmission channel and the second gas transmission channel at the position of the top cover; The first gas delivery channel is used to provide gas to the process chamber through the first pipeline or the second pipeline.

2. The semiconductor process chamber according to claim 1, wherein: The gas purification component further includes a pressure reducing valve and a pressure sensor. The pressure reducing valve and the pressure sensor are both arranged in the second pipeline and are both located upstream of the purifier.

3. The semiconductor process chamber according to claim 2, wherein: The semiconductor process chamber further includes a controller configured to control the opening of the pressure reducing valve according to the actual pressure of the gas in the second pipeline detected by the pressure sensor, so that the pressure of the gas flowing through the purifier is within a preset pressure range.

4. The semiconductor process chamber according to claim 3, wherein: The gas purification component further includes a flow controller, which is disposed in the second pipeline and located upstream of the purifier. The flow controller is used to control the flow of the gas flowing through the purifier.

5. The semiconductor process chamber according to claim 4, wherein: The gas purification assembly further comprises a temperature detection device, wherein the temperature detection device is used to detect the actual temperature of the purifier; The controller is further configured to control the opening of the flow controller according to the actual temperature detected by the temperature detection device.

6. The semiconductor process chamber according to claim 1, wherein: The gas purification component further includes a filter, which is disposed in the second pipeline and upstream of the purifier, and is used to filter particulate matter in the gas flowing through the second pipeline.

7. The semiconductor process chamber according to claim 1, wherein: The gas purification component further includes a third switch valve provided on the second pipeline, and the third switch valve is located downstream of the purifier.

8. A control method for a semiconductor process chamber, characterized in that: The semiconductor process chamber is the semiconductor process chamber according to claim 1, and the control method includes: Before opening the top cover, controlling the first switch valve and the second switch valve to be closed; After closing the top cover, the second switch valve is controlled to open and the gas is transported into the first gas transmission channel, so that the gas enters the second pipeline through the first gas transmission channel, passes through the purifier, and then enters the process cavity through the second gas transmission channel.

9. The control method according to claim 8, characterized in that: The gas purification assembly further includes a flow controller, which is provided in the second pipeline and is located upstream of the purifier; Before controlling the second switch valve to open, the control method further includes: closing the flow controller; After controlling the second switch valve to open, the control method further includes: The opening of the flow controller is controlled to gradually increase to a first preset opening threshold.

10. The control method according to claim 9, characterized in that: The gas purification assembly further comprises a temperature detection device, wherein the temperature detection device is used to detect the actual temperature of the purifier; The step of controlling the opening of the flow controller to gradually increase to a first preset opening threshold comprises: Controlling the opening of the flow controller to increase a first opening value; determining whether the actual temperature is less than a preset temperature threshold within a first preset time period after the first opening value is increased; When the actual temperature is less than the preset temperature threshold within the first preset time period after increasing the first opening value, return to the step of controlling the opening of the flow controller to increase the first opening value until the opening of the flow controller increases to the first preset opening threshold.

11. The control method according to claim 10, characterized in that: The control method further includes: When the actual temperature is greater than or equal to the preset temperature threshold within the first preset time period after the first opening value is increased, controlling the flow controller to reduce the second opening value; determining whether the actual temperature is less than the preset temperature threshold within a second preset time period after the second opening value is reduced; When the actual temperature is less than the preset temperature threshold within the second preset time period after the second opening value is reduced, returning to the step of controlling the opening of the flow controller to increase the first opening value; When the actual temperature is greater than or equal to the preset temperature threshold within the second preset time after reducing the second opening value, return to the step of controlling the flow controller to reduce the second opening value until the actual temperature is less than the preset temperature threshold within the second preset time after reducing the second opening value.

12. The control method according to claim 8, characterized in that: The gas purification component further includes a pressure reducing valve and a pressure sensor, wherein the pressure reducing valve and the pressure sensor are both provided in the second pipeline and are both located upstream of the purifier; Before controlling the second switch valve to open, the control method further includes: Controlling the opening of the pressure reducing valve to be at a minimum value; After controlling the second switch valve to open, the control method further includes: The opening of the pressure reducing valve is controlled according to the actual pressure of the gas in the second pipeline detected by the pressure sensor, so that the pressure of the gas flowing through the purifier is within a preset pressure range.

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