Substrate treatment device, substrate support, and temperature adjustment method

Abstract

This substrate treatment device includes a treatment container, a first temperature adjustment block unit which is disposed inside the treatment container and on which an electrostatic chuck is disposed, and a second temperature adjustment block unit which is disposed above the first temperature adjustment block unit. The first temperature adjustment block unit has provided therein a first flow path through which a first heat transfer medium adjusted to a first temperature is allowed to flow. The second temperature adjustment block unit has provided therein a second flow path through which a second heat transfer medium adjusted to a second temperature is allowed to flow. A heat transfer space is formed between the first temperature adjustment block unit and the second temperature adjustment block unit.

Description

Substrate processing apparatus, substrate support, and temperature adjustment method

[0001] The present disclosure relates to a substrate processing apparatus, a substrate support, and a temperature adjustment method.

[0002] Patent Document 1 discloses a substrate processing apparatus including a mounting table (substrate support) that includes an electrostatic chuck for supporting a substrate (wafer) and a base (lower electrode) stacked together. The base includes first and second coolant pipes for circulating a coolant, one above the other. The substrate processing apparatus selectively supplies the same coolant to the first and second coolant pipes during plasma processing.

[0003] JP 2014-11382 A

[0004] The present disclosure provides a technique that can widen the temperature range in which the temperature of a substrate can be adjusted.

[0005] According to one aspect of the present disclosure, there is provided a substrate processing apparatus including a processing vessel, a first temperature control block unit disposed inside the processing vessel and having an electrostatic chuck disposed thereon, and a second temperature control block unit disposed above the first temperature control block unit, wherein the first temperature control block unit has a first flow path therein through which a first heat transfer medium regulated to a first temperature can flow, and the second temperature control block unit has a second flow path therein through which a second heat transfer medium regulated to a second temperature can flow, and a heat transfer space is formed between the first temperature control block unit and the second temperature control block unit.

[0006] According to one aspect, the temperature range for adjusting the temperature of the substrate can be widened.

[0007] [Correction based on Rule 91 07.04.2025] A diagram schematically illustrating a plasma processing apparatus and a control unit of a plasma processing system according to an embodiment. A diagram schematically illustrating the overall configuration of a plasma processing apparatus. A diagram illustrating a substrate support and a temperature adjustment device of the plasma processing apparatus. FIG. 4(A) is a plan cross-sectional view illustrating a flow path of a base. FIG. 4(B) is a plan cross-sectional view illustrating a heat transfer space of the base. A flowchart illustrating a process flow of a temperature adjustment method. FIG. 6(A) is a view illustrating a state in which a first heat transfer medium is supplied to a first flow path. FIG. 6(B) is a view illustrating a state in which a second heat transfer medium is supplied to a second flow path. A diagram illustrating a substrate support and a temperature adjustment device according to a first modified example. FIG. 8(A) is a plan cross-sectional view illustrating a heat transfer space of a substrate support according to a second modified example. FIG. 8(B) is a side cross-sectional view illustrating a heat transfer space of a substrate support according to a third modified example.

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma generated in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 14 and an electrostatic chuck 17. The base 14 includes a conductive member. The conductive member of the base 14 functions as a lower electrode. The electrostatic chuck 17 is disposed on the base 14. The electrostatic chuck 17 includes a ceramic member 17a and an electrostatic electrode 17b disposed within the ceramic member 17a. The ceramic member 17a has a central region 111a. In one embodiment, the ceramic member 17a also has an annular region 111b. Note that another member surrounding the electrostatic chuck 17, such as the annular electrostatic chuck or an annular insulating member, may also have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 17 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power source 31 and / or a DC power source 32 (described below) may be disposed within the ceramic member 17a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 14 and at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 17b may function as the lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The substrate support 11 may also include a temperature module 50 configured to regulate at least one of the electrostatic chuck 17, the ring assembly 112, and the substrate to a target temperature, as will be described in more detail below.

[0018] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0024] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] Next, the temperature module 50 of the plasma processing apparatus 1 according to one embodiment will be described with reference to FIG. 3 . The temperature module 50 is provided inside the base 14 that constitutes the substrate support 11. The temperature module 50 includes a flow path 51 through which a heat transfer medium flows. The heat transfer medium flowing through the flow path 51 may be either a liquid or a gas. Note that the temperature module 50 may be configured by combining the flow path 51 within the base 14 with a heat transfer gas supply unit that supplies a heat transfer gas between the back surface of the substrate W and the central region 111 a, a heater (e.g., an electric heating wire) that heats the substrate support 11 itself, and the like.

[0027] The base 14 includes a first temperature control block 15 disposed vertically below the first temperature control block 15 and a second temperature control block 16 disposed above the first temperature control block 15 and supporting the electrostatic chuck 17. In other words, the first temperature control block 15 supports the electrostatic chuck 17 disposed above it (indirectly) via the second temperature control block 16. The first temperature control block 15 has a first flow path 511 therein, which serves as the flow path 51 of the temperature module 50 and through which a first heat transfer medium adjusted to a first temperature can flow. The second temperature control block 16 has a second flow path 516 therein, which serves as the flow path 51 of the temperature module 50 and through which a second heat transfer medium adjusted to a second temperature can flow.

[0028] The first temperature control block 15 and the second temperature control block 16 according to the embodiment are formed from different materials. The first temperature control block 15 may be made from a conductive metal such as aluminum to form a lower electrode. The second temperature control block 16 may be made from a metal with a thermal expansion coefficient similar to that of ceramic, or from a metal matrix composite (MMC). An example of an MMC is a composite of silicon carbide and aluminum (or another metal). The first temperature control block 15 and the second temperature control block 16 may be made from the same material. In this case, the first temperature control block 15 and the second temperature control block 16 may be integrally molded, with the flow path 51 separated into two stages along the thickness direction.

[0029] The first temperature adjustment block unit 15 and the second temperature adjustment block unit 16 are fixed to each other by a mechanical fixing mechanism 18 such as a screw or a clamp. A conductive part 18a (e.g., a screw) used in the fixing mechanism 18 and extending between the first temperature adjustment block unit 15 and the second temperature adjustment block unit 16 may be connected to a power source 30 to form part of a high-frequency power supply path. In other words, the power source 30 may be configured to be electrically connected to the first temperature adjustment block unit 15, or may be configured to be electrically connected to both the first temperature adjustment block unit 15 and the second temperature adjustment block unit 16.

[0030] The first flow path 511 provided in the first temperature control block 15 and the second flow path 516 provided in the second temperature control block 16 may be formed in the same shape or different shapes. For example, as shown in the plan view of FIG. 4A , the first flow path 511 (or the second flow path 516) may be formed in a spiral shape. Alternatively, the first flow path 511 or the second flow path 516 may be formed in a concentric circular shape, a lattice shape, a striped shape, or the like in a plan view, or may be a space that partially or entirely extends in the surface direction of the base 14.

[0031] The first flow path 511 is connected to an inlet port 512 through which the first heat transfer medium flows in and an outlet port 513 through which the first heat transfer medium flows out. As shown in Fig. 3 , the inlet port 512 and the outlet port 513 are each connected to a pipe (not shown) that extends vertically downward through the first temperature control block 15 and penetrates the bottom of the plasma processing chamber 10.

[0032] Similarly, the second flow path 516 is connected to an inlet port 517 through which the second heat transfer medium flows in and an outlet port 518 through which the second heat transfer medium flows out. The inlet port 517 and the outlet port 518 each extend vertically downward through the second temperature control block 16 and the first temperature control block 15 and are connected to a pipe (not shown) that penetrates the bottom of the plasma processing chamber 10.

[0033] A circulation path 60 is connected to the first flow path 511 and the second flow path 516 via respective pipes. The circulation path 60 circulates the first heat transfer medium and the second heat transfer medium independently. The circulation path 60 is also provided with an external temperature adjustment device 70 that adjusts the temperatures of the first heat transfer medium and the second heat transfer medium.

[0034] The temperature adjustment external device 70 is separately provided with a first heat transfer medium supply unit 71 that adjusts the temperature of a first heat transfer medium and circulates the first heat transfer medium, and a second heat transfer medium supply unit 72 that adjusts the temperature of a second heat transfer medium and circulates the second heat transfer medium. In other words, by providing the first heat transfer medium supply unit 71 and the second heat transfer medium supply unit 72 in the same system, the temperature adjustment external device 70 is able to circulate heat transfer media with a wide temperature range.

[0035] Specifically, the circulation path 60 includes a first supply path 61 and a first discharge path 62 for circulating the first heat transfer medium between a first flow path 511 of the first temperature adjustment block 15 and a first heat transfer medium supply unit 71 of the temperature adjustment external device 70. The first supply path 61 is connected to an inlet port 512 and to the first heat transfer medium supply unit 71. The first discharge path 62 is connected to an outlet port 513 and to the first heat transfer medium supply unit 71. This allows the plasma processing apparatus 1 to circulate the first heat transfer medium through the first heat transfer medium supply unit 71, the first supply path 61, the inlet port 512, the first flow path 511 of the first temperature adjustment block 15, the outlet port 513, and the first discharge path 62 in this order. Hereinafter, the path through which the first heat transfer medium circulates will also be referred to as a first circulation path 63.

[0036] The circulation path 60 also includes a second supply path 66 and a second discharge path 67 for circulating the second heat transfer medium between the second flow path 516 of the second temperature control block 16 and the second heat transfer medium supply unit 72 of the temperature control external device 70. The second supply path 66 is connected to the inlet port 517 and to the second heat transfer medium supply unit 72. The second discharge path 67 is connected to the outlet port 518 and to the second heat transfer medium supply unit 72. This allows the plasma processing apparatus 1 to circulate the second heat transfer medium through the second heat transfer medium supply unit 72, the second supply path 66, the inlet port 517, the second flow path 516 of the second temperature control block 16, the outlet port 518, and the second discharge path 67 in this order. Hereinafter, the path through which the second heat transfer medium circulates will also be referred to as the second circulation path 68.

[0037] The first heat transfer medium supply unit 71 has a function of adjusting (heating, heat exchange, etc.) the temperature of the first heat transfer medium therein to a high temperature (first temperature). The first heat transfer medium supply unit 71 is connected to the control unit 2 and adjusts the temperature of the first heat transfer medium to a target temperature based on the control of the control unit 2. The first heat transfer medium supply unit 71 continuously supplies the first heat transfer medium whose temperature has been adjusted to a high temperature to the first supply path 61 and recovers the first heat transfer medium whose temperature has decreased from the first discharge path 62. For this reason, the first heat transfer medium supply unit 71 may include a tank for temporarily storing the first heat transfer medium, a heat exchanger for exchanging heat with the first heat transfer medium, a pump for pressure-feeding the first heat transfer medium to the first supply path 61, a flow regulator for adjusting the flow rate of the first heat transfer medium, and the like (all not shown).

[0038] The first heat transfer medium applied to the first circulation path 63 is preferably one that easily reaches a high temperature in order to efficiently adjust the temperature in the first heat transfer medium supply unit 71. An example of the material for the first heat transfer medium is a fluorine-based inert liquid such as Fluorinert (registered trademark). By selecting such a material, the first heat transfer medium supply unit 71 can adjust the temperature of the first heat transfer medium within a range of, for example, approximately −10°C to 150°C.

[0039] Meanwhile, the second heat transfer medium supply unit 72 has a function of adjusting (by cooling, heat exchange, etc.) the temperature of the second heat transfer medium to a low temperature (second temperature). The second heat transfer medium supply unit 72 is connected to the control unit 2 and adjusts the temperature of the second heat transfer medium to a target temperature based on the control of the control unit 2. The second heat transfer medium supply unit 72 continuously supplies the second heat transfer medium whose temperature has been adjusted to a low temperature to the second supply path 66 and recovers the second heat transfer medium whose temperature has increased from the second discharge path 67. For this reason, the second heat transfer medium supply unit 72 may also include a tank for temporarily storing the second heat transfer medium, a heat exchanger for exchanging heat with the second heat transfer medium, a pump for pressure-feeding the second heat transfer medium to the second supply path 66, a flow regulator for adjusting the flow rate of the second heat transfer medium, and the like (all not shown).

[0040] The second heat transfer medium applied to the second circulation path 68 is preferably one that is easily cooled to a low temperature in order to efficiently adjust the temperature in the second heat transfer medium supply unit 72. An example of the material of the second heat transfer medium is hydrofluoroether (C ４ F ９ O.C. ２ H ５ For example, a high-performance liquid such as Novec (registered trademark) can be used. By selecting such a material, the second heat transfer medium supply unit 72 can adjust the temperature of the second heat transfer medium within a range of, for example, about -70°C to 50°C. The material of the second heat transfer medium may be the same as the material of the first heat transfer medium.

[0041] The base 14 also has a heat transfer space 52 between the first temperature control block unit 15 and the second temperature control block unit 16 (approximately at the middle position in the thickness direction of the base 14). The heat transfer space 52 is formed in a substantially circular shape in a planar cross-sectional view (see FIG. 4B ) and has a constant thickness in the vertical direction. For example, the heat transfer space 52 is formed between the bases 14 by cutting a concave shape into the inside of the upper surface of the first temperature control block unit 15 and stacking the first temperature control block unit 15 and the second temperature control block unit 16 one above the other. In this case, the base 14 preferably has a configuration in which the periphery of the heat transfer space 52 is surrounded by an annular sealing member 53, thereby airtightly sealing the heat transfer space 52.

[0042] The plasma processing apparatus 1 is capable of selectively supplying a third heat transfer medium adjusted to a third temperature to the heat transfer space 52. To this end, an inlet port 521 through which the third heat transfer medium flows and an outlet port 522 through which the third heat transfer medium flows are connected to the heat transfer space 52. Each of the inlet port 521 and the outlet port 522 extends vertically downward through the first temperature control block 15 and is connected to a pipe (not shown) that penetrates the bottom of the plasma processing chamber 10.

[0043] Furthermore, a third supply path 76 is connected to the inlet port 521, while a third discharge path 77 is connected to the outlet port 522. A third heat transfer medium supply unit 73 is connected to the third supply path 76 and the third discharge path 77. A back pressure valve (not shown) or the like for adjusting the opening degree of the flow path may be provided in the third discharge path 77 to retain the third heat transfer medium in the heat transfer space 52. The plasma processing apparatus 1 may be configured not to circulate the third heat transfer medium. In this case, the plasma processing apparatus 1 may be configured to have one port in the heat transfer space 52, and to supply and discharge the third heat transfer medium between the third heat transfer medium supply unit 73 and the heat transfer space 52.

[0044] The third heat transfer medium supply unit 73 is connected to the control unit 2 and supplies the third heat transfer medium to the third supply path 76 under the control of the control unit 2. For example, when the first heat transfer medium supply unit 71 circulates the first heat transfer medium, the third heat transfer medium supply unit 73 supplies the third heat transfer medium adjusted to a third temperature to the heat transfer space 52. When the heat transfer space 52 is filled with the third heat transfer medium, it becomes a heat transfer space capable of efficiently transferring heat between the first temperature control block unit 15 and the second temperature control block unit 16. The third heat transfer medium may be either a gas or a liquid. For example, a material with high thermal conductivity, such as helium (He) gas, may be selected as the gas. The third temperature is preferably, for example, approximately the same as or higher than the temperature of the first heat transfer medium. However, stable heat transfer can also be achieved by increasing the pressure in the heat transfer space 52 using the third heat transfer medium to form a viscous flow space. Therefore, the third heat transfer medium supply unit 73 may supply the third heat transfer medium, the temperature of which has not been adjusted, to the heat transfer space 52 .

[0045] The third heat transfer medium supply unit 73 may also include a suction mechanism (not shown) that discharges the third heat transfer medium from the heat transfer space 52 to form a heat insulating space that suppresses heat transfer between the first temperature adjustment block unit 15 and the second temperature adjustment block unit 16. Furthermore, the third heat transfer medium supply unit 73 may also include a vacuum pump as a suction mechanism that reduces the pressure in the heat transfer space 52 to a vacuum atmosphere, thereby enhancing the heat insulating effect.

[0046] The plasma processing apparatus 1 according to the embodiment is basically configured as described above, and its operation (temperature adjustment method) will be described below with reference to the flowchart of FIG.

[0047] The control unit 2 of the plasma processing system adjusts the temperature of the substrate W placed on the electrostatic chuck 17 and the ring assembly 112 from before the substrate processing to during the substrate processing, for example, by performing steps S101 to S105 shown in FIG.

[0048] In the temperature adjustment method, the control unit 2 reads out a recipe for substrate processing in the plasma processing apparatus 1 and obtains a target temperature for the substrate W in the plasma processing (step S101).

[0049] Then, based on the acquired target temperature, the control unit 2 determines whether to circulate the first heat transfer medium through the first circulation path 63 or the second heat transfer medium through the second circulation path 68 (step S102). For example, if the target temperature of the substrate W is high, the control unit 2 selects to circulate the first heat transfer medium (step S102: YES) and proceeds to step S103 to operate the first heat transfer medium supply unit 71. On the other hand, if the target temperature of the substrate W is low, the control unit 2 selects to circulate the second heat transfer medium (step S102: NO) and proceeds to step S105 to operate the second heat transfer medium supply unit 72.

[0050] In step S103, the first heat transfer medium supply unit 71 heats the first heat transfer medium to a target temperature (first temperature) and circulates the first heat transfer medium at the target temperature. The first heat transfer medium circulates through the first heat transfer medium supply unit 71, the first supply path 61, the first flow path 511, and the first discharge path 62 in this order. As a result, as shown in FIG. 6A, the temperature of the first temperature control block 15 is increased by the first heat transfer medium flowing through the first flow path 511. Note that in FIGS. 6A and 6B, the paths through which the heat transfer medium flows are indicated by thick lines.

[0051] Furthermore, the third heat transfer medium supply unit 73 supplies the third heat transfer medium to the heat transfer space 52 to fill it, thereby making the heat transfer space 52 a heat transfer space (step S104). The timing of supplying the third heat transfer medium may be the same as the timing of supplying the first heat transfer medium, or may be earlier than the timing of supplying the first heat transfer medium. As a result, the heat of the first temperature control block unit 15 set by the first heat transfer medium is transferred to the second temperature control block unit 16 via the heat transfer space 52 (heat transfer space), and further transferred from the second temperature control block unit 16 to the substrate W and ring assembly 112 via the electrostatic chuck 17. As a result, the temperatures of the substrate W and ring assembly 112 are successfully adjusted to the high target temperature.

[0052] Meanwhile, in step S105, the second heat transfer medium supply unit 72 lowers the temperature of the second heat transfer medium to a target temperature (second temperature) and circulates the second heat transfer medium at the target temperature. The second heat transfer medium circulates through the second heat transfer medium supply unit 72, the second supply path 66, the second flow path 516, and the second discharge path 67 in this order. As a result, as shown in FIG. 6B , the temperature of the second temperature control block 16 is lowered by the second heat transfer medium circulating through the second flow path 516.

[0053] Furthermore, when supplying the second heat transfer medium to the second flow path 516, the plasma processing apparatus 1 does not operate the third heat transfer medium supply unit 73, thereby not supplying the third heat transfer medium to the heat transfer space 52. Alternatively, the plasma processing apparatus 1 performs suction on the heat transfer space 52 using the third heat transfer medium supply unit 73. This prevents the heat that has descended from the second temperature adjustment block unit 16 from being transferred to the first temperature adjustment block unit 15 in the heat transfer space 52. As a result, the plasma processing apparatus 1 can effectively remove heat from the substrate W and ring assembly 112 held by the electrostatic chuck 17.

[0054] As described above, the plasma processing apparatus 1 and the temperature adjustment method selectively perform a process of circulating a first heat transfer medium through the first flow path 511 of the first temperature adjustment block 15 and a process of circulating a second heat transfer medium through the second flow path 516 of the second temperature adjustment block 16. This allows the plasma processing apparatus 1 to adjust the temperature of the substrate W over a wide temperature range. In particular, the plasma processing apparatus 1 includes a heat transfer space 52 between the first flow path 511 and the second flow path 516. This heat transfer space 52 allows the plasma processing apparatus 1 to easily switch between the heat transfer effect from the first temperature adjustment block 15 to the second temperature adjustment block 16 and the insulation effect and heat transfer effect from the second temperature adjustment block 16 to the first temperature adjustment block 15.

[0055] Furthermore, by providing the first heat transfer medium supply unit 71 and the second heat transfer medium supply unit 72 in the temperature adjustment external device 70, the plasma processing apparatus 1 can easily control the circulation of the first heat transfer medium to the first flow path 511 and the circulation of the second heat transfer medium to the second flow path 516. The temperature adjustment external device 70 can further widen the temperature range over which the temperature of the substrate W can be controlled by circulating one of the first heat transfer medium and the second heat transfer medium. Furthermore, if the first heat transfer medium and the second heat transfer medium are made of different materials, it becomes possible to control the temperature over an even wider temperature range depending on the materials.

[0056] The third heat transfer medium supply unit 73 supplies the third heat transfer medium to the heat transfer space 52, thereby enabling the heat transfer space 52 to function as a heat transfer space with the third heat transfer medium, and enabling efficient transfer of heat from the first temperature control block unit 15 to the second temperature control block unit 16. In particular, when the first heat transfer medium is supplied to the first flow path 511 to control the temperature of the first temperature control block unit 15, the plasma processing apparatus 1 supplies the third heat transfer medium to the heat transfer space 52, thereby enabling uniform transfer of the temperature-controlled heat in the planar direction.

[0057] Furthermore, since the first temperature of the first heat transfer medium is higher than the second temperature of the second heat transfer medium, the plasma processing apparatus 1 can transfer heat from the first temperature control block 15 set by the first heat transfer medium to the substrate W. On the other hand, when lowering the temperature of the substrate W, the plasma processing apparatus 1 can remove heat by the second heat transfer medium via the second temperature control block 16.

[0058] The substrate processing apparatus (plasma processing apparatus 1), substrate support 11, and temperature adjustment method according to the present disclosure are not limited to the above-described embodiments and may be modified in various ways. For example, the plasma processing apparatus 1 may adjust the first and second heat transfer media to the same temperature. This allows the plasma processing apparatus 1 to efficiently adjust the temperature of the entire base 14 by simultaneously supplying the first and second heat transfer media to the base 14, thereby adjusting the temperatures of the substrate W and the ring assembly 112 in a short time. Furthermore, the plasma processing apparatus 1 may further shorten the time required to adjust the temperature of the entire base 14 by supplying a third heat transfer medium to the heat transfer space 52 when supplying the first and second heat transfer media.

[0059] FIG. 7 illustrates a temperature module 50A according to a first modification. As shown in FIG. 7, the temperature module 50A according to the first modification differs from the temperature control external device 70 in that the first heat transfer medium supply unit 71 and the second heat transfer medium supply unit 72 are installed as separate devices. Specifically, the temperature module 50A has a two-system single chiller in which the high-temperature heat exchanger 71A, which is the first heat transfer medium supply unit 71, and the low-temperature heat exchanger 72A1, which is the second heat transfer medium supply unit 72, are installed separately. Thus, even with the configuration including the high-temperature heat exchanger 71A and the low-temperature heat exchanger 72A1, the plasma processing apparatus 1 and temperature control method can easily switch between supplying the first heat transfer gas to the first flow path 511 and supplying the second heat transfer gas to the second flow path 516.

[0060] Fig. 8(A) is a plan cross-sectional view showing the heat transfer space 52A of the base 14 according to the second modified example. Fig. 8(B) is a side cross-sectional view showing the heat transfer space 52B of the base 14 according to the third modified example. As described above, the heat transfer space 52 of the base 14 is not limited to a configuration having a flat bottom surface formed by cutting out a recess in the upper surface of the first temperature control block 15, and may be formed in various shapes, for example, as shown in Figs. 8(A) and 8(B).

[0061] The heat transfer space 52A according to the second modification shown in FIG. 8A includes multiple convex portions 54 therein, thereby partially varying the thermal resistance along the horizontal direction of the heat transfer space 52A. For example, the convex portions 54 are formed in arc shapes concentric with the center of the heat transfer space 52A and spaced apart from one another. The upper ends of the convex portions 54 may contact the bottom surface of the second temperature control block 16 or may be spaced apart from the bottom surface of the second temperature control block 16. The heat transfer space 52A having the convex portions 54 can appropriately distribute the third heat transfer medium not only around the center but also in the circumferential direction. As a result, the heat transfer space 52A can more uniformly transfer heat from the first temperature control block 15 to the second temperature control block 16, thereby further improving the in-plane heat uniformity of the substrate W and the ring assembly 112 placed on the electrostatic chuck 17.

[0062] 8B, the heat transfer space 52B according to the third modification includes a pedestal portion 55 with a higher bottom surface in the central portion, thereby reducing the amount of the third heat transfer medium present in the central portion. This allows the heat transfer space 52B having the pedestal portion 55 to distribute more of the third heat transfer medium to the outer periphery, thereby further increasing the temperature of the outer periphery of the second temperature control block 16. Therefore, for example, even if the temperature of the outer periphery of the substrate W is more difficult to increase than that of the center portion of the substrate W during substrate processing, the plasma processing apparatus 1 can easily increase the heat of the outer periphery of the substrate W.

[0063] The embodiments disclosed above include, for example, the following aspects: [Supplementary Note 1] A substrate processing apparatus including: a processing vessel; a first temperature control block unit disposed inside the processing vessel and having an electrostatic chuck disposed thereon; and a second temperature control block unit disposed above the first temperature control block unit, wherein the first temperature control block unit has a first flow path therein through which a first heat transfer medium regulated to a first temperature can flow, and the second temperature control block unit has a second flow path therein through which a second heat transfer medium regulated to a second temperature can flow, and a heat transfer space is formed between the first temperature control block unit and the second temperature control block unit. [Supplementary Note 2] The substrate processing apparatus according to Supplementary Note 1, further including: a first heat transfer medium supply unit connected to the first flow path and circulating the first heat transfer medium, and a second heat transfer medium supply unit connected to the second flow path and circulating the second heat transfer medium. [Supplementary Note 3] The substrate processing apparatus according to Supplementary Note 2, further comprising a control unit, wherein the control unit selectively circulates either the first heat transfer medium or the second heat transfer medium. [Supplementary Note 4] The substrate processing apparatus according to Supplementary Note 3, further comprising: a first heat transfer medium supply unit and a second heat transfer medium supply unit that are different materials from each other. [Supplementary Note 5] The substrate processing apparatus according to any one of Supplementary Notes 2 to 4, further comprising: a first heat transfer medium supply unit and a second heat transfer medium supply unit that constitute the same device. [Supplementary Note 6] The substrate processing apparatus according to any one of Supplementary Notes 2 to 4, further comprising: a third heat transfer medium supply unit that is connected to the heat transfer space and that supplies a third heat transfer medium adjusted to a third temperature. [Supplementary Note 8] The substrate processing apparatus according to Supplementary Note 7, wherein the third heat transfer medium supply unit supplies the third heat transfer medium to the heat transfer space when supplying the first heat transfer medium to the first flow path. [Supplementary Note 9] The substrate processing apparatus according to any one of Supplementary Notes 1 to 8, wherein the first temperature and the second temperature are different from each other. [Supplementary Note 10] The substrate processing apparatus according to Supplementary Note 9, wherein the first temperature is higher than the second temperature.[Supplementary Note 11] The substrate processing apparatus according to any one of Supplements 1 to 10, wherein the first temperature adjustment block unit and the second temperature adjustment block unit are formed of different materials. [Supplementary Note 12] The substrate processing apparatus according to any one of Supplements 1 to 11, wherein the processing vessel includes a plasma generation unit therein, and the plasma generation unit generates plasma in an internal space of the processing vessel. [Supplementary Note 13] A substrate support including a first temperature adjustment block unit on which an electrostatic chuck is disposed, and a second temperature adjustment block unit disposed above the first temperature adjustment block unit, wherein the first temperature adjustment block unit has a first flow path therein through which a first heat transfer medium regulated to a first temperature can flow, and the second temperature adjustment block unit has a second flow path therein through which a second heat transfer medium regulated to a second temperature can flow, and a heat transfer space is formed between the first temperature adjustment block unit and the second temperature adjustment block unit. [Supplementary Note 14] A temperature adjustment method for a substrate processing apparatus including: a processing vessel; a first temperature adjustment block disposed inside the processing vessel and having an electrostatic chuck disposed thereon; and a second temperature adjustment block disposed above the first temperature adjustment block, the temperature adjustment method comprising: determining whether to circulate a first heat transfer medium, adjusted to a first temperature, through a first flow path provided inside the first temperature adjustment block; or circulating a second heat transfer medium, adjusted to a second temperature, through a second flow path provided inside the second temperature adjustment block; and supplying a third heat transfer medium to a heat transfer space formed between the first temperature adjustment block and the second temperature adjustment block when performing the process of circulating the first heat transfer medium.

[0064] The plasma processing apparatus 1, the substrate support 11, and the temperature adjustment method according to the presently disclosed embodiments are illustrative in all respects and are not limiting. The embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above embodiments can be configured differently within a consistent range, and can be combined within a consistent range.

[0065] The substrate processing apparatus of the present disclosure can be applied to any type of apparatus, including atomic layer deposition (ALD) apparatus, capacitively coupled plasma (CCP), inductively coupled plasma (ICP), radial line slot antenna (RLSA), electron cyclotron resonance plasma (ECR), and helicon wave plasma (HWP).

[0066] This application claims priority from Japanese Patent Application No. 2024-063445, filed on April 10, 2024, with the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0067] REFERENCE SIGNS LIST 1 Plasma processing apparatus 10 Plasma processing chamber 15 First temperature control block 16 Second temperature control block 17 Electrostatic chuck 52 Heat transfer space 511 First flow path 516 Second flow path

Claims

1. A substrate processing apparatus comprising: a processing vessel; a first temperature control block unit disposed inside the processing vessel and having an electrostatic chuck disposed thereon; and a second temperature control block unit disposed above the first temperature control block unit, wherein the first temperature control block unit has a first flow path therein through which a first heat transfer medium adjusted to a first temperature can flow; the second temperature control block unit has a second flow path therein through which a second heat transfer medium adjusted to a second temperature can flow; and a heat transfer space is formed between the first temperature control block unit and the second temperature control block unit.

2. The substrate processing apparatus according to claim 1, comprising: a first heat transfer medium supply unit connected to the first flow path and circulating the first heat transfer medium; and a second heat transfer medium supply unit connected to the second flow path and circulating the second heat transfer medium.

3. The substrate processing apparatus according to claim 2, further comprising a control unit, wherein the control unit selectively circulates either the first heat transfer medium or the second heat transfer medium.

4. The substrate processing apparatus according to claim 3, wherein the first heat transfer medium and the second heat transfer medium are made of different materials.

5. The substrate processing apparatus according to claim 2, wherein the first heat transfer medium supply unit and the second heat transfer medium supply unit constitute the same device.

6. The substrate processing apparatus according to claim 2, wherein the first heat transfer medium supply unit and the second heat transfer medium supply unit are provided as different devices.

7. The substrate processing apparatus according to claim 1, further comprising: a third heat transfer medium supply unit connected to the heat transfer space and supplying a third heat transfer medium adjusted to a third temperature.

8. The substrate processing apparatus according to claim 7, wherein the third heat transfer medium supply unit supplies the third heat transfer medium to the heat transfer space when supplying the first heat transfer medium to the first flow path.

9. The substrate processing apparatus according to any one of claims 1 to 6, wherein the first temperature and the second temperature are different from each other.

10. The substrate processing apparatus according to claim 9, wherein the first temperature is higher than the second temperature.

11. The substrate processing apparatus according to any one of claims 1 to 6, wherein the first temperature control block and the second temperature control block are made of different materials.

12. The substrate processing apparatus according to any one of claims 1 to 6, wherein the processing vessel includes a plasma generating unit therein, and the plasma generating unit generates plasma in an internal space of the processing vessel.

13. A substrate support comprising: a first temperature control block portion on which an electrostatic chuck is disposed; and a second temperature control block portion disposed above the first temperature control block portion, wherein the first temperature control block portion has a first flow path therein through which a first heat transfer medium regulated to a first temperature can flow; the second temperature control block portion has a second flow path therein through which a second heat transfer medium regulated to a second temperature can flow; and a heat transfer space is formed between the first temperature control block portion and the second temperature control block portion.

14. A temperature adjustment method for a substrate processing apparatus including: a processing vessel; a first temperature control block unit disposed inside the processing vessel and having an electrostatic chuck disposed thereon; and a second temperature control block unit disposed above the first temperature control block unit, the temperature adjustment method comprising: a step of determining whether to circulate a first heat transfer medium adjusted to a first temperature through a first flow path provided inside the first temperature control block unit, or a step of circulating a second heat transfer medium adjusted to a second temperature through a second flow path provided inside the second temperature control block unit; and a step of supplying a third heat transfer medium to a heat transfer space formed between the first temperature control block unit and the second temperature control block unit when performing the process of circulating the first heat transfer medium.

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